TWI806230B - plasma immersion ion implantation equipment - Google Patents

Abstract

An embodiment of the present invention provides a plasma immersion ion implantation device, including: a process chamber, a base is arranged in the process chamber, and the cavity of the process chamber is grounded, and the base is electrically connected to a bias power supply; a dielectric liner, It is arranged on the top of the process chamber and communicates with the process chamber; and the inner diameter of the dielectric liner gradually increases from top to bottom; the gas uniform component is made of the first conductive material and is set on the dielectric liner The top of the cylinder, and the lower surface of the gas uniform component has a gas uniform area exposed to the inside of the dielectric liner, and a plurality of gas outlets are distributed in the uniform gas area to deliver process gas to the dielectric liner; coupling coils , arranged around the outer circumference of the dielectric liner, and electrically connected to the excitation power supply; and a conductive component, respectively electrically connected to the gas uniform component and the cavity of the process chamber. The plasma immersion ion implantation equipment provided by the embodiment of the present invention can improve the doping uniformity of the wafer.

Description

plasma immersion ion implantation equipment

The invention relates to the technical field of semiconductor processing, in particular to a plasma immersion ion implantation device.

In recent years, integrated circuits are rapidly developing toward high integration, and the application of plasma-related technologies has played a vital role in it. Plasma-related processes mainly include cleaning, etching, grinding, deposition, and doping, among which plasma doping is called plasma immersion ion implantation (PIII for short). Plasma immersion ion implantation equipment has been widely used in the doping process of modern electronic and optical devices.

The plasma immersion ion implantation system is to immerse the target to be doped directly in the plasma containing the dopant, and by applying a specific negative voltage to the target, the dopant ions in the plasma enter the target object surface.

For the existing plasma immersion ion implantation system, the chamber wall of its process chamber is grounded, and the pedestal arranged in the process chamber is electrically connected with the bias power supply. The plasma formed in the process chamber and the chamber wall of the process chamber form a bias voltage path. However, since the distance between the position of the wafer placed on the susceptor on different radii and the chamber wall closest to the position is different, this makes the plasma distributed in the process chamber corresponding to the wafer at different radii The equivalent currents at the positions above are different (that is, the equivalent currents of the plasma are different at different positions in the radial direction of the process chamber), thereby reducing the doping uniformity.

The present invention aims to solve at least one of the technical problems in the prior art, and proposes a plasma immersion ion implantation device, which can improve the uniformity of wafer doping and effectively improve the uniformity of implantation dose.

In order to achieve the above purpose, an embodiment of the present invention provides a plasma immersion ion implantation equipment, including: A process chamber, in which a pedestal is provided, the pedestal includes a carrying surface for carrying a wafer, and the chamber body of the process chamber is grounded, and the pedestal is electrically connected to a bias power supply; a dielectric liner arranged on the top of the process chamber and communicated with the process chamber; The gas distribution part is made of the first conductive material and is arranged on the top of the dielectric liner, and the lower surface of the gas distribution part has a gas distribution area exposed inside the dielectric liner, and the gas distribution part is A plurality of gas outlets are distributed in the gas area to deliver process gas to the dielectric liner; a coupling coil arranged around the outer periphery of the dielectric liner and electrically connected to the excitation power supply; and The conductive part is electrically connected with the gas uniform part and the cavity of the process chamber respectively.

Optionally, an insulating protection part covering the entire inner surface of the process chamber is provided in the process chamber, the insulating protection part is used to protect the cavity of the process chamber, and the cavity of the process chamber and the base Galvanic isolation.

Optionally, the insulating protection part is made of non-metallic insulating material.

Optionally, the non-metal insulating material includes silicon carbide or quartz.

Optionally, the orthographic projection of the gas uniform region on the bearing surface completely coincides with the bearing surface.

Optionally, the first conductive material includes a non-metallic conductive material.

Optionally, the plasma immersion ion implantation equipment further includes a support assembly, which is fixedly connected to the chamber body of the process chamber and is located outside the dielectric liner to support the gas uniform component, and the The supporting component is made of the second conductive material, and is used as the conductive component to conduct electricity with the gas uniform component and the cavity of the process chamber respectively.

Optionally, the second conductive material includes metal or metal with a conductive layer plated on its surface.

Optionally, the support assembly includes at least three support members, and the at least three support members are evenly distributed around the dielectric liner along the circumferential direction of the gas distribution member.

Optionally, each of the support members includes a support body, the support body is fixedly connected with the cavity of the process chamber; and a horizontal support portion is formed on the support body for supporting the gas uniform component, and the A limiting component is arranged on the horizontal supporting part to limit the position of the gas distribution component on the horizontal supporting component.

Optionally, the aeration component is arranged concentrically with the base, and the aeration component includes an aeration body, an aeration chamber formed in the aeration body, an air inlet hole and a plurality of air outlet holes, wherein,

The air inlet end of the air inlet hole is connected to the air source, and the air outlet end of the air inlet hole communicates with the air uniform chamber; The air inlet end of the air outlet is used to communicate with the uniform air chamber, and the air outlet end of each air outlet is used as the air outlet to communicate with the interior of the dielectric liner.

Optionally, the inner diameter of the dielectric window increases gradually from top to bottom.

Optionally, on the axial cross-section of the dielectric liner, the included angle between the inner sidewall of the dielectric liner and the axis of the dielectric liner is greater than or equal to 15° and less than or equal to 60° ; The height of the dielectric liner is greater than or equal to 100mm and less than or equal to 210mm; the thickness of the side wall of the dielectric liner is greater than or equal to 20mm and less than or equal to 40mm.

Optionally, the plasma immersion ion implantation equipment further includes a start-up diagnosis device, and the start-up diagnosis device includes: A photosensitive sensor is used to detect the light intensity in the process chamber in real time and feed back the light intensity signal; and The signal processing unit is used for receiving the light intensity signal, and judging whether plasma is generated in the process chamber according to the change of the light intensity signal, and if so, executes the process; if not, sends out an alarm.

Optionally, the light sensor includes a photoresistor.

Optionally, an observation window is provided in the cavity of the process chamber, and the photosensitive sensor is arranged outside the observation window.

Optionally, the bias power supply includes a pulsed DC power supply, and the pulse frequency of the pulsed DC power supply is greater than or equal to 1 kHz and less than or equal to 100 kHz; the duration of the rising edge and the duration of the falling edge in the pulse cycle of the pulsed DC power supply are both less than 10 ns ; The output voltage of the pulsed DC power supply is greater than or equal to 0.5kV and less than or equal to 10kV.

The beneficial effect of the embodiment of the present invention: In the plasma immersion ion implantation equipment provided by the embodiment of the present invention, the cavity of the process chamber is grounded, and the gas homogenization component is made of the first conductive material, and the lower surface has a gas homogenization area exposed to the interior of the dielectric liner, In addition, the conductive parts are electrically connected to the gas uniform part and the cavity of the process chamber, so that the cavity of the process chamber, the conductive parts and the gas uniform parts can be electrically connected to each other, so that the bias power supply, the base, and the process chamber are formed. A bias loop is formed between the plasma, the gas uniform component, the conductive component, and the cavity of the process chamber. Compared with the previous technology, the bias loop has a change in the path of the equivalent current, that is, at least a part of the equivalent current will pass through the uniform After the gas parts and conductive parts flow into the cavity of the process chamber. In this way, the equivalent current paths corresponding to different positions in the radial direction of the process chamber can be made the same, thereby improving the flow rate at each position in the radial direction of the process chamber from the surface of the wafer placed on the base to the gas uniform area of the gas uniform component. The consistency of the equivalent current, which can improve the uniformity of wafer doping, and effectively improve the uniformity of implant dose. In addition, the above-mentioned gas homogenization component can simultaneously deliver process gas to the dielectric liner at different positions in the radial direction of the process chamber through the plurality of gas outlets distributed in the gas homogenization area, thereby improving the uniformity of plasma distribution, In turn, the doping uniformity of the wafer can be further improved.

In order for those skilled in the art to better understand the technical solutions of the present invention, the plasma immersion ion implantation equipment provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Please refer to FIG. 1, the plasma immersion ion implantation (Plasma Immersion Ion Implantation, hereinafter referred to as PIII) equipment provided by the embodiment of the present invention, the PIII equipment includes a process chamber 1, a dielectric liner 4, a gas uniform component 5, and a coupling coil 6 and conductive parts. Wherein, a pedestal 2 is provided in the process chamber 1, the pedestal 2 includes a bearing surface for carrying a wafer, and the cavity of the process chamber 1 is grounded, specifically, the cavity of the process chamber 1 may include a chamber wall 1a and the annular adapter 1b arranged on the top of the chamber wall 1a are electrically connected, and the chamber wall 1a is grounded. The base 2 is electrically connected to the bias power supply 3; the dielectric liner 4 is arranged on the top of the process chamber 1 and communicates with the process chamber 1, specifically, the top of the process chamber 1 is open, and the above-mentioned annular adapter 1 b is used to support the dielectric liner 4 , and the upper end and the lower end of the dielectric liner 4 are open, and the lower end of the dielectric liner 4 communicates with the upper end of the process chamber 1 . The dielectric liner 4 is, for example, quartz, which does not contain metal elements, thereby avoiding metal contamination caused by plasma corrosion on the inner surface of the dielectric liner.

In this embodiment, the coupling coil 6 is arranged around the dielectric liner 4 and is electrically connected to the excitation power source 8 through the matcher 7 . The excitation power source 8 is used to load the excitation power to the coupling coil 6, so that the coupling coil 6 generates excitation energy, and is coupled to the inside of the dielectric liner 4 through the dielectric liner 4 to excite the dielectric liner 4 The internal process gas forms the plasma. The excitation power source 8 is, for example, a radio frequency power source, and its frequency is, for example, 13.56 MHz. In some optional embodiments, the coupling coil 6 includes a plurality of single-turn coils, and the plurality of single-turn coils are arranged at intervals along the axis of the dielectric liner 4 and connected in parallel with each other; and the plurality of single-turn coils are arranged coaxially and connected with the dielectric The radial spacing between the electrode liners 4 is the same. Such setting can further increase the density of plasma distribution in the edge region of the process chamber 1 . Of course, in practical applications, coupling coils of other arbitrary structures, such as conical cylindrical helical coils, can also be used.

The gas uniform component 5 is arranged on the top of the dielectric liner 4, and it is made of a first conductive material, the first conductive material includes a non-metallic conductive material, such as silicon, for high-frequency alternating current, silicon is conductive, Moreover, it does not contain metal elements, thereby avoiding the introduction of metal pollution due to plasma corrosion on the inner surface of the gas uniform component 5 . As shown in FIG. 2 , the lower surface of the gas uniform component 5 has a gas uniform region 55 exposed to the inside of the dielectric liner 4 , and a plurality of gas outlets 54 are distributed in the gas uniform region 55 for use in the process chamber 1. Different positions in the radial direction deliver the process gas into the dielectric liner 4 , so that the uniformity of plasma distribution can be improved, and the uniformity of wafer doping can be improved.

In some optional embodiments, as shown in FIG. 1 , the gas uniform component 5 is arranged concentrically with the base 2 , and the gas uniform component 5 includes a gas uniform body 51 and a gas uniform cavity 52 formed in the gas uniform body 51 , air inlet hole 53 and plural air outlet holes (promptly used as air outlet 54), wherein, the inlet end of air inlet hole 53 is connected with air source 50, and the air outlet end of air inlet hole 53 is communicated with uniform gas chamber 52; Each outlet The air inlet end of the air port 54 communicates with the uniform gas chamber 52 , and the air outlet end of each air outlet port 54 communicates with the interior of the dielectric liner 4 . The process gas provided by the gas source 50 enters the uniform gas chamber 52 through the gas inlet 53 , and then uniformly enters the dielectric liner 4 through each gas outlet 54 .

In some optional embodiments, in order to ensure that the interior of the dielectric liner 4 and the process chamber 1 are in a closed state, as shown in FIG. A sealing ring 16 is used to seal the gap between the two; and, a second sealing ring 17 is arranged between the dielectric liner 4 and the process chamber 1 (that is, the annular adapter 1b) for To seal the gap between the two.

The conductive component is electrically connected to the gas uniform component 5 and the cavity of the process chamber 1 respectively. There may be various structures of the conductive member. For example, in this embodiment, as shown in FIG. It is fixed on the ring adapter 1b to support the gas uniform component 5, and the support component 9 is made of a second conductive material, and is used as the above-mentioned conductive component to communicate with the gas uniform component 5 (that is, the gas uniform body 51) and the process The cavities of the cavity 1 (for example, the ring adapter 1 b ) are electrically connected. The support assembly 9 can not only play a supporting role, but also can play a conductive role, which simplifies the structure of the equipment. In some embodiments, the second conductive material includes metal or a metal coated with a conductive layer on the surface, and the conductive layer can increase electrical conductivity to ensure good electrical conductivity. The conductive layer may be at least one layer, and the conductive layer is, for example, a material with good conductive properties such as silver or gold.

The support assembly 9 may have various structures. For example, as shown in FIG. 4, so as to ensure uniform stress on the gas distribution component 5, and realize stable support of the gas distribution component 5. The structure of each support can be various, for example, as shown in Figure 3, each support includes a support body 91, and the support body 91 is fixedly connected with the cavity of the process chamber 1 (for example, the ring adapter 1b) , the way of fixed connection is, for example: a boss 9b is set at the lower end of the support body 91, the boss 9b is stacked on the ring adapter 1b, and the boss 9b and the ring adapter 1b are connected by the first screw 19 fixed together. Moreover, a horizontal support portion 92 is formed on the support body 91, and the horizontal support portion 92 is, for example, a bent structure formed on the upper end of the support body 91 for supporting the gas uniform body 51 of the gas uniform component 5, and the horizontal support portion 92 92 is provided with a limiting component 9 a to limit the position of the gas uniform body 51 of the gas uniform component 5 on the horizontal support component 92 . Optionally, the second screw 20 is used to fix the limiting component 9a and the gas uniform body 51 together.

It should be noted that, in this embodiment, the supporting component 9 can not only play a supporting role, but also can play a conductive role, but this embodiment of the present invention is not limited thereto, and in practical applications, a separate support can also be provided components and conductive parts.

In this embodiment, the chamber wall 1a of the process chamber 1, the annular adapter 1b, the support assembly 9 and the gas uniform part 5 are electrically connected to each other, and the chamber wall 1a is grounded, and the base 2 is electrically connected to the bias power supply 3. connected, so that a bias circuit is formed between the bias power supply 3, the base 2, the plasma formed in the process chamber, the gas uniform component 5, the support assembly 9 and the chamber wall 1a of the process chamber 1, and the bias circuit is connected to the Compared with the prior art, the path of the equivalent current is changed, that is, at least a part of the equivalent current flows into the chamber wall 1 a of the process chamber 1 after passing through the gas uniform component 5 and the support assembly 9 . In this way, the equivalent current paths corresponding to different positions in the radial direction of the process chamber 1 can be made the same, so that the process chamber 1 The consistency of the equivalent current at each position in the radial direction can improve the doping uniformity of the wafer and effectively improve the uniformity of the implant dose.

In some optional embodiments, an insulating protection part 18 covering the entire inner surface of the processing chamber 1 is provided in the processing chamber 1, the insulating protection part 18 is used to protect the chamber wall 1a of the processing chamber 1, and the insulating protection The component 18 is made of non-metal insulating material, and is used for electrically isolating the chamber wall 1 a of the process chamber 1 from the base 2 . In this way, in the bias circuit, most of the equivalent current of the base 2 will not directly flow into the chamber wall 1a closest to the base 2, but flow from bottom to top behind the gas uniform component 5 and the support assembly 9 , flows into the chamber wall 1a of the process chamber 1, so that the consistency of the equivalent current at each position in the radial direction of the process chamber 1 can be further improved. At the same time, since the insulating protection component 18 is made of non-metallic insulating material, metal contamination caused by plasma corrosion on the inner surface of the process chamber 1 can be avoided. The non-metal insulating material includes silicon carbide or quartz, for example. Certainly, in practical application, the above-mentioned insulation protection component 18 may also include a protection component body, and a non-metal insulating layer is covered on the entire inner surface of the protection component body. In this case, the protective component body can be made of a suitable material according to specific needs, such as non-metallic materials such as graphite, silicon carbide or quartz. The non-metal insulating layer includes silicon carbide or quartz, for example.

In some optional embodiments, the projection of the uniform gas region 55 of the gas uniform component 5 on the bearing surface completely coincides with the bearing surface. coincide, and the diameter of the circle is consistent with the diameter of the bearing surface. Such an arrangement can form an equivalent bias circuit as shown by the curved arrow in FIG. The equivalent current at each position in the radial direction of the process chamber 1 is consistent, so that the uniformity of wafer doping can be improved more effectively, and the ion dose implanted into the wafer surface can be roughly the same, thereby effectively increasing the implantation dose. Uniformity. It should be noted that the above-mentioned carrying surface of the base 2 refers to an area on the base 2 for placing a wafer, and the shape and size of this area are consistent with the shape and size of the wafer.

It should be noted that, in this embodiment, the supporting component 9 can not only play a supporting role, but also can play a conductive role, but this embodiment of the present invention is not limited thereto, and in practical applications, a separate support can also be provided components and conductive parts.

In some embodiments, as shown in FIG. 5 , the inner diameter of the dielectric liner 4 gradually increases from top to bottom, that is, the dielectric liner 4 is in the form of a conical ring, which helps to expand the plasma in the The diffusion range in the lateral direction can increase the distribution density of the plasma in the edge region of the process chamber 1 . In some optional embodiments, on the axial cross section of the dielectric liner 4, the included angle a between the inner sidewall of the dielectric liner 4 and the axis of the dielectric liner 4 is greater than or equal to 15° , and less than or equal to 60°; the height of the dielectric liner 4 is greater than or equal to 100mm and less than or equal to 210mm; the thickness of the side wall of the dielectric liner 4 is greater than or equal to 20mm and less than or equal to 40mm. Within this size range, the diffusion range of the plasma in the lateral direction can be effectively expanded, thereby increasing the distribution density of the plasma in the edge region of the process chamber 1 .

As shown in Figure 6, curve A is the plasma density distribution curve from the center to the edge direction along the radial direction of the base in the process chamber of the plasma obtained by using the existing plasma immersion ion implantation equipment; curve B is The plasma obtained by using the plasma immersion ion implantation equipment provided by the embodiment of the present invention has a plasma density distribution curve from the center to the edge along the radial direction of the susceptor in the process chamber. Comparing curve A and curve B, it can be seen that the plasma distribution density of curve B in the edge region of the process chamber is significantly improved compared with curve A, thereby reducing the difference between the plasma distribution density and the central region of the process chamber. In turn, the uniformity of the plasma distribution density is improved.

In some optional embodiments, as shown in FIG. 1 , the plasma immersion ion implantation equipment further includes a start-up diagnosis device, and the start-up diagnosis device includes a photosensitive sensor 10 and a signal processing unit 11, wherein the photosensitive sensor 10 is used for The light intensity in the process chamber 1 is detected in real time, and the signal processing unit 11 feeds back the light intensity signal; the signal processing unit 11 is used to receive the light intensity signal, and judge whether plasma is generated in the process chamber 1 according to the change of the light intensity signal, and The judgment result is sent to the machine process control unit 12; the machine process control unit 12 is used to execute the process when the judgment result is that plasma is generated; when the judgment result is no plasma is generated, an alarm is issued. Of course, in practical applications, the signal processing unit 11 and the machine process control unit 12 can also be integrated together. By using the photosensitive sensor 10 and the signal processing unit 11 to determine whether plasma is generated in the process chamber 1, it can be used as a basis for judging whether to execute the next process flow, for example, it can be used as a basis for judging whether the plasma is started successfully, so as to ensure that The step of turning on the bias power supply will not be performed before the plasma is started, so that the problem of sparking damage to the wafer and equipment caused by applying a high-frequency pulse bias voltage to the substrate when it is not started can be avoided.

In some optional embodiments, the photosensitive sensor 10 includes a photoresistor, for example. When the process chamber 1 is in an inactive state, the light intensity in the process chamber 1 is very weak, and the resistance of the photoresistor is very high at this time. When the chamber starts up successfully, the light intensity in the process chamber 1 increases instantaneously, and the resistance value of the photoresistor decreases instantaneously. Based on this, the signal processing unit 11 can judge whether the plasma startup is successful according to the change of the resistance value used for the feedback of the photoresistor. For example, when the resistance value of the photoresistor decreases to a certain critical value, it is determined that the plasma startup is successful.

In some optional embodiments, an observation window (not shown in the figure) is provided in the cavity of the process chamber 1 (such as the side wall of the chamber wall 1a), and the photosensitive sensor 10 is arranged outside the observation window, To avoid being corroded by plasma.

In some optional embodiments, in order to make the ion energy distribution of doping into the wafer surface more concentrated, which is beneficial to control the ion energy of doping, the bias power supply 3 includes a pulsed DC power supply, and the pulse frequency of the pulsed DC power supply 3 It is greater than or equal to 1kHz and less than or equal to 100kHz; the duration of the rising edge and the duration of the falling edge in the pulse cycle of the pulsed DC power supply 3 are both less than 10ns; the output voltage of the pulsed DC power supply 3 is greater than or equal to 0.5kV and less than or equal to 10kV.

In some optional embodiments, the plasma immersion ion implantation equipment further includes an implanted ion collection device 13 and a current signal integration processing unit 14, wherein the implanted ion collection device 13 is, for example, a Faraday cup whose shape is similar to a round cup, And it is arranged on one side of the base 2 . The current signal integration processing unit 14 is used to calculate the ion implantation dose in real time and send it to the machine process control unit 12 . With the aid of the implanted ion collection device 13 and the current signal integration processing unit 14, the ion implantation dose can be accurately detected.

To sum up, in the plasma immersion ion implantation equipment provided by the embodiment of the present invention, the cavity of the process chamber is grounded, and the gas uniform part is made of the first conductive material, and the lower surface has a The uniform gas area, and use the conductive parts to conduct electricity with the gas uniform part and the cavity of the process chamber respectively, so that the cavity of the process chamber, the conductive parts and the gas uniform parts can be electrically connected to each other, so that the bias power supply, base, A bias circuit is formed between the plasma formed in the process chamber, the gas uniform component, the conductive component, and the cavity of the process chamber. Compared with the previous technology, the path of the equivalent current in the bias circuit is changed, that is, at least a part of it, etc. The effective current will flow into the cavity of the process chamber after passing through the gas uniform part and the conductive part. In this way, the equivalent current paths corresponding to different positions in the radial direction of the process chamber can be made the same, thereby improving the flow rate at each position in the radial direction of the process chamber from the surface of the wafer placed on the base to the gas uniform area of the gas uniform component. The consistency of the equivalent current, which can improve the uniformity of wafer doping, and effectively improve the uniformity of implant dose. In addition, the above-mentioned gas homogenization component can simultaneously deliver process gas to the dielectric liner at different positions in the radial direction of the process chamber through the plurality of gas outlets distributed in the gas homogenization area, thereby improving the uniformity of plasma distribution, In turn, the doping uniformity of the wafer can be further improved.

It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

1: Process chamber

1a: chamber wall

1b:Ring Adapter

2: base

3: Bias power supply

4: Dielectric liner

5: Evening parts

6: Coupling coil

7: Matcher

8: excitation power supply

9: Support components

9a: Limiting parts

9b: Boss

10: Photosensitive sensor

11: Signal processing unit

12: Machine process control unit

13: Implantation ion collection device

14: Current signal integration processing unit

16: The first sealing ring

17: Second sealing ring

18: Insulation protection parts

19: First screw

20: Second screw

50: gas source

51: Uniform gas body

52: uniform air cavity

53: air intake

54: Air outlet

55: Uniform gas area

91: Support body

92:Horizontal support

a: included angle

FIG. 1 is a structural diagram of a plasma immersion ion implantation device provided by an embodiment of the present invention; Fig. 2 is a top sectional view of the gas uniform component used in the embodiment of the present invention; Fig. 3 is a partial side view of a support member used in an embodiment of the present invention; Fig. 4 is a schematic diagram of a bias circuit of a plasma immersion ion implantation device provided by an embodiment of the present invention; Fig. 5 is a structural diagram of a dielectric liner and an aeration component used in an embodiment of the present invention; FIG. 6 is a radial density distribution diagram of plasma obtained by using the plasma immersion ion implantation equipment provided by the embodiment of the present invention.

1: Process chamber

1a: chamber wall

1b:Ring Adapter

2: base

3: Bias power supply

4: Dielectric liner

5: Evening parts

6: Coupling coil

7: Matcher

8: excitation power supply

9: Support components

10: Photosensitive sensor

11: Signal processing unit

12: Machine process control unit

13: Implantation ion collection device

14: Current signal integration processing unit

18: Insulation protection parts

20: Air source

51: Uniform gas body

52: uniform air cavity

53: air intake

54: Air outlet

Claims (16)

A plasma immersion ion implantation equipment, characterized in that it includes: a process chamber, a base is arranged in the process chamber, the base includes a carrying surface for carrying a wafer, and the cavity of the process chamber is grounded , the base is electrically connected to a bias power supply, the bias power supply includes a pulsed DC power supply; a dielectric liner is arranged on the top of the process chamber and communicates with the process chamber; a gas uniform component adopts Made of a first conductive material, and arranged on the top of the dielectric liner, and the lower surface of the gas distribution part has a gas distribution area exposed to the inside of the dielectric liner, and the gas distribution area A plurality of gas outlets are distributed to deliver process gas into the dielectric liner; a coupling coil is arranged around the outer periphery of the dielectric liner and is electrically connected to the excitation power supply; and a conductive member is respectively connected to the The gas uniform component is electrically connected with the chamber body of the process chamber, so that the bias power supply, the susceptor, the plasma formed in the process chamber, the gas uniform component, the conductive component, and the cavity body of the process chamber A bias circuit is formed between them. Plasma immersion ion implantation equipment as described in Claim 1, wherein an insulating protection part covering the entire inner surface of the process chamber is arranged in the process chamber, the insulating protection part is made of a non-metallic insulating material, and The cavity of the process chamber is electrically isolated from the susceptor. The plasma immersion ion implantation device as claimed in claim 2, wherein the non-metal insulating material includes silicon carbide or quartz. The plasma immersion ion implantation device as claimed in claim 1, wherein the orthographic projection of the gas uniform region on the bearing surface completely coincides with the bearing surface. The plasma immersion ion implantation apparatus as claimed in claim 1, wherein the first conductive material comprises a non-metallic conductive material. The plasma immersion ion implantation equipment as claimed in claim 1, wherein the plasma immersion ion implantation equipment further includes a support assembly, the support assembly is fixedly connected with the cavity of the process chamber, and is located on the dielectric liner The outer side of the gas distribution part is used to support the gas distribution part, and the support component is made of a second conductive material, and is used as the conductive part to electrically communicate with the gas distribution part and the cavity of the process chamber respectively. The plasma immersion ion implantation device as claimed in item 6, wherein the second conductive material includes metal or metal with a conductive layer plated on its surface. The plasma immersion ion implantation apparatus as claimed in claim 6, wherein the support assembly includes at least three support members, and the at least three support members are evenly distributed on the dielectric liner along the circumferential direction of the gas uniform member around. Plasma immersion ion implantation equipment as claimed in claim 8, wherein each of the supports includes a support body, the support body is fixedly connected with the cavity of the process chamber; and a horizontal support is formed on the support body part for supporting the gas distribution part, and a limiting part is arranged on the horizontal support part to limit the position of the gas distribution part on the horizontal support part. The plasma immersion ion implantation device as claimed in claim 1, wherein the gas homogenization component is arranged concentrically with the base, and the gas homogenization component includes a gas homogenization body and a gas homogenization cavity formed in the gas homogenization body 1. An air intake hole and a plurality of air outlet holes, wherein the air inlet end of the air inlet hole is used to connect with the air source, the air outlet end of the air inlet hole communicates with the uniform air chamber; the air inlet end of the air outlet hole is connected to the The gas uniform chamber is connected, and the gas outlet end of each of the gas outlet holes is used as the gas outlet to communicate with the interior of the dielectric liner. The plasma immersion ion implantation device as claimed in Claim 1, wherein the inner diameter of the dielectric window increases gradually from top to bottom. The plasma immersion ion implantation apparatus as claimed in claim 11, wherein, on the axial cross-section of the dielectric liner, between the inner sidewall of the dielectric liner and the axis of the dielectric liner The included angle is greater than or equal to 15° and less than or equal to 60°; the height of the dielectric liner is greater than or equal to 100mm and less than or equal to 210mm; the thickness of the side wall of the dielectric liner is greater than or equal to 20mm and less than or equal to 40mm. The plasma immersion ion implantation equipment as claimed in claim 1, wherein the plasma immersion ion implantation equipment further includes a start-up diagnosis device, and the start-up diagnosis device includes: a photosensitive sensor, which is used to immediately detect the Light intensity, and feed back a light intensity signal; and a signal processing unit, used to receive the light intensity signal, and judge whether plasma is generated in the process chamber according to the change of the light intensity signal, and if so, execute the process; if not , an alert is issued. The plasma immersion ion implantation apparatus as claimed in claim 13, wherein the photosensitive sensor comprises a photoresistor. The plasma immersion ion implantation apparatus as claimed in claim 13, wherein an observation window is arranged in the cavity of the process chamber, and the photosensitive sensor is arranged outside the observation window. The plasma immersion ion implantation equipment according to claim 1, wherein the pulse frequency of the pulsed DC power supply is greater than or equal to 1 kHz and less than or equal to 100 kHz; the duration of the rising edge and the duration of the falling edge in the pulse cycle of the pulsed DC power supply Both are less than 10ns; the output voltage of the pulsed DC power supply is greater than or equal to 0.5kV and less than or equal to 10kV.

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