TWI805876B - 用於大量生產程序監視之寬鬆耦合檢查及計量系統 - Google Patents

用於大量生產程序監視之寬鬆耦合檢查及計量系統 Download PDF

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Publication number
TWI805876B
TWI805876B TW108144623A TW108144623A TWI805876B TW I805876 B TWI805876 B TW I805876B TW 108144623 A TW108144623 A TW 108144623A TW 108144623 A TW108144623 A TW 108144623A TW I805876 B TWI805876 B TW I805876B
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TW
Taiwan
Prior art keywords
metrology
model
tool
metrology tool
har
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TW108144623A
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English (en)
Chinese (zh)
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TW202032092A (zh
Inventor
吳松
徐寅
安德烈 Ｖ 舒傑葛洛夫
列泉 李
帕洛 駱微拉
強納生 麥迪森
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美商科磊股份有限公司
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/201—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by measuring small-angle scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/04—Display or data processing devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/126—Microprocessor processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/305—Accessories, mechanical or electrical features computer simulations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/306—Accessories, mechanical or electrical features computer control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Software Systems (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Medical Informatics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
TW108144623A 2018-12-06 2019-12-06 用於大量生產程序監視之寬鬆耦合檢查及計量系統 TWI805876B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862776292P 2018-12-06 2018-12-06
US62/776,292 2018-12-06
US16/287,523 US11562289B2 (en) 2018-12-06 2019-02-27 Loosely-coupled inspection and metrology system for high-volume production process monitoring
US16/287,523 2019-02-27

Publications (2)

Publication Number Publication Date
TW202032092A TW202032092A (zh) 2020-09-01
TWI805876B true TWI805876B (zh) 2023-06-21

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Family Applications (1)

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TW108144623A TWI805876B (zh) 2018-12-06 2019-12-06 用於大量生產程序監視之寬鬆耦合檢查及計量系統

Country Status (7)

Country Link
US (1) US11562289B2 (https=)
JP (1) JP7268156B2 (https=)
KR (1) KR102471847B1 (https=)
CN (1) CN113348358B (https=)
DE (1) DE112019006092T5 (https=)
TW (1) TWI805876B (https=)
WO (1) WO2020118125A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11761913B2 (en) * 2020-05-04 2023-09-19 Bruker Technologies Ltd. Transmission X-ray critical dimension (T-XCD) characterization of shift and tilt of stacks of high-aspect-ratio (HAR) structures
JP7458935B2 (ja) * 2020-08-26 2024-04-01 キオクシア株式会社 計測装置、及び、計測方法
US12117783B2 (en) * 2020-10-15 2024-10-15 Abb Schweiz Ag Online frequently derived measurements for process monitoring, control and optimization
US20240111256A1 (en) * 2022-09-30 2024-04-04 Onto Innovation Inc. Composite data for device metrology
US20250053096A1 (en) * 2023-08-07 2025-02-13 Kla Corporation Flexible Measurement Models For Model Based Measurements Of Semiconductor Structures

Citations (6)

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US6816570B2 (en) * 2002-03-07 2004-11-09 Kla-Tencor Corporation Multi-technique thin film analysis tool
US7478019B2 (en) * 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US20120275569A1 (en) * 2011-04-29 2012-11-01 General Electric Company Radiological image noise reduction system and method
US20150032398A1 (en) * 2013-07-08 2015-01-29 Kla-Tencor Corporation Combined X-Ray and Optical Metrology
US20160223476A1 (en) * 2015-02-04 2016-08-04 Asml Netherlands B.V. Metrology method, metrology apparatus and device manufacturing method
US20170205342A1 (en) * 2016-01-15 2017-07-20 Kla-Tencor Corporation Systems And Methods For Extended Infrared Spectroscopic Ellipsometry

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US20020018217A1 (en) * 2000-08-11 2002-02-14 Michael Weber-Grabau Optical critical dimension metrology system integrated into semiconductor wafer process tool
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7511835B2 (en) * 2007-04-12 2009-03-31 Tokyo Electron Limited Optical metrology using a support vector machine with simulated diffraction signal inputs
US9103664B2 (en) * 2010-04-01 2015-08-11 Tokyo Electron Limited Automated process control using an adjusted metrology output signal
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
TWI471117B (zh) * 2011-04-29 2015-02-01 Nat Applied Res Laboratoires 可用於行動裝置之人臉膚質評估演算介面裝置
US10013518B2 (en) * 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
CN105224704B (zh) * 2014-06-25 2018-08-24 中国科学院海洋研究所 一种海底不稳定性的评价方法
US10697908B2 (en) * 2015-06-01 2020-06-30 Xwinsys Ltd. Metrology inspection apparatus
US10352695B2 (en) 2015-12-11 2019-07-16 Kla-Tencor Corporation X-ray scatterometry metrology for high aspect ratio structures
WO2018075808A1 (en) * 2016-10-20 2018-04-26 Kla-Tencor Corporation Hybrid metrology for patterned wafer characterization

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6816570B2 (en) * 2002-03-07 2004-11-09 Kla-Tencor Corporation Multi-technique thin film analysis tool
US7478019B2 (en) * 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US20120275569A1 (en) * 2011-04-29 2012-11-01 General Electric Company Radiological image noise reduction system and method
US20150032398A1 (en) * 2013-07-08 2015-01-29 Kla-Tencor Corporation Combined X-Ray and Optical Metrology
US20160223476A1 (en) * 2015-02-04 2016-08-04 Asml Netherlands B.V. Metrology method, metrology apparatus and device manufacturing method
US20170205342A1 (en) * 2016-01-15 2017-07-20 Kla-Tencor Corporation Systems And Methods For Extended Infrared Spectroscopic Ellipsometry

Also Published As

Publication number Publication date
KR102471847B1 (ko) 2022-11-28
JP2022510025A (ja) 2022-01-25
US20200184372A1 (en) 2020-06-11
CN113348358B (zh) 2024-04-26
TW202032092A (zh) 2020-09-01
JP7268156B2 (ja) 2023-05-02
KR20210089258A (ko) 2021-07-15
CN113348358A (zh) 2021-09-03
WO2020118125A1 (en) 2020-06-11
DE112019006092T5 (de) 2021-09-02
US11562289B2 (en) 2023-01-24

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