TWI805249B - Sputtering coating device and equipment and its sputtering coating discharge assembly - Google Patents

Abstract

The invention discloses a sputtering coating device and a sputtering coating discharge assembly, wherein the sputtering coating device is used for bombarding a target to form a film layer on the surface of a substrate by means of sputtering coating, and the sputtering coating The device includes: a reaction chamber, the reaction chamber has a reaction chamber; an electrode assembly and a discharge coil assembly, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber, and the sputtering coating , the substrate is housed in the reaction chamber, the target is set on the electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power supply, and the radio frequency power supply Providing working radio frequency current to the electrode assembly and the discharge coil assembly to deposit and form a film layer on the surface of the substrate.

Description

Sputtering coating device and equipment and sputtering coating discharge assembly thereof

The invention relates to the field of film coating, and further relates to a sputter coating device and equipment and a sputter coating assembly thereof.

This application claims the priority of the Chinese patent application with the application number 202110269016.2 and the title of the invention "sputter coating device and equipment and its sputter coating assembly" submitted to the China Patent Office on March 12, 2021, the entire content of which is incorporated by reference incorporated in this application.

Sputtering coating is a widely used physical vapor deposition method for preparing surface coatings. It is a technology in which energetic particles are used to bombard the target surface in a vacuum chamber, and the bombarded particles are deposited on the surface of the substrate to form a coating. . Compared with traditional vacuum evaporation, sputtering coating has many advantages, such as strong adhesion between the film layer and the substrate, convenient preparation of high-melting point thin films, reactive sputtering to prepare compound films, etc.

The simplest sputtering coating method is DC secondary sputtering, which is a method of sputtering coating with a glow discharge structure composed of a pair of cathode and anode. In the DC secondary sputtering method, the cathode is used as the sputtering target, the substrate to be coated is placed between the two electrodes or on the anode, and a DC high voltage is applied between the two electrodes under an appropriate pressure to cause the gas to discharge to generate plasma. The ions in it are affected by the electric field of the cathode, and accelerate the bombardment of the cathode target, so that the target material is sputtered out from the surface and deposited on the surface of the substrate to form a coating. However, due to the low efficiency of the DC diode discharge and the low plasma density, the sputtering yield and deposition rate are low. DC diode sputtering has rarely been used in practice.

In order to improve the efficiency of sputtering coating, people have improved the ordinary DC two-pole sputtering. A magnet is installed behind the cathode target to form a strong magnetic field of more than several hundred gauss near the cathode to confine electrons near the cathode to greatly improve the discharge efficiency. , thus greatly increasing the sputtering rate, which is is a well-known DC magnetron sputtering method. The DC magnetron sputtering method is widely used in the preparation of metal, alloy and conductive compound coatings.

However, neither the DC dipole sputtering method nor the DC magnetron sputtering method can be used for the preparation of insulating material coatings, because the insulating material cannot be used as a cathode to generate discharge. In order to be able to use the sputtering effect to prepare insulating material coatings, people think of using radio frequency discharge; apply a radio frequency voltage between the two electrodes, make a thin sheet of insulating material target and fix it on the radio frequency driving electrode, and place the substrate to be coated on Between two electrodes or on the ground electrode. The radio frequency electric field can penetrate the insulating material target and discharge between the two electrodes to generate plasma, and work together with the plasma to form a self-bias on the surface of the insulating material target, accelerating the ion bombardment of the target, so that the target material is sputtered out and deposited on the substrate The surface forms a coating. This sputtering coating method using radio frequency discharge is called radio frequency sputtering. Typical RF sputtering frequency is 13.56MHz.

Similar to the DC diode sputtering method, the RF sputtering method also has the problems of low discharge efficiency, low plasma density, low sputtering yield and low deposition rate. In order to solve this problem, a seemingly natural solution is to combine radio frequency discharge with magnetron cathode, that is, to apply radio frequency voltage to the magnetron sputtering target, which is radio frequency magnetron sputtering.

However, RF magnetron sputtering has not achieved the significant improvement in deposition efficiency as DC magnetron sputtering has for DC diode sputtering. Compared with radio frequency sputtering, the deposition rate improvement of radio frequency magnetron sputtering is very limited. The typical DC magnetron sputtering deposition rate is hundreds of nanometers per minute, while the typical RF magnetron sputtering deposition rate is only a few nanometers per minute. Such a low deposition rate seriously restricts the application of radio frequency magnetron sputtering in the industry. Applications. Alternative methods such as chemical vapor deposition are used for the preparation of insulating films in many industries to obtain acceptable coating efficiency, although it is usually accompanied by problems such as impurities and pollution. Radio frequency magnetron sputtering is mostly used in basic scientific research regardless of cost.

In fact, a careful analysis using the knowledge of plasma physics will reveal that radio frequency magnetron sputtering is not a reasonable solution. The presence of a magnetic field near the target causes the cyclotron motion of the electrons to suppress the electrons' response to the radio frequency electric field, thereby inhibiting their absorption of radio frequency energy. This weakens the ionization on the one hand, and weakens the self-bias effect on the other hand, so that the energy and flux of the ions bombarding the target cannot be effectively increased. This is the reason why the deposition efficiency of RF magnetron sputtering cannot be significantly improved.

An advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating components, which do not need to form a magnetic field to increase the plasma density, and avoid electron gyrations caused by the existence of the magnetic field.

One advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating components, which form high-density plasma in the space near the target through the cooperation of discharge coils and electrodes, so as to quickly form a film layer.

An advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating assembly, which can form a film layer of insulating or non-insulating material, that is to say, the type of film material is less limited.

An advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating assembly, which do not use a magnetic field to avoid spatial inhomogeneity caused by magnetically confined plasma, and form a more uniform film layer.

An advantage of the present invention is to provide a sputtering coating device and equipment and its sputtering coating assembly, wherein electrodes, targets and discharge coils cover a relatively large area, so that the target is etched uniformly and the utilization rate of the target is high.

An advantage of the present invention is to provide a sputtering coating device and equipment and its sputtering coating assembly, which utilizes a dielectric layer to separate electrodes and targets, so that different types of targets can be efficiently deposited on the surface of the substrate without being affected by The electrical properties of the target affect its deposition efficiency.

One advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating assembly, wherein in one embodiment, it utilizes the isolation sleeve to constrain the coil discharge area, and makes the discharge area of the electrode discharge area and the discharge coil positive After binding, it interacts with the raw material gas.

One advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating assembly, wherein the sputter deposition area is located near the electrode and the discharge coil, such as above, below, vertically, obliquely upward or obliquely downward.

An advantage of the present invention is to provide a sputter coating device and equipment and its sputtering Coating assembly, wherein in one embodiment, the deposition area is located in the parallel area of the electrode and the coil, so as to facilitate multi-layer or batch coating around the target.

An advantage of the present invention is to provide a sputter coating device and equipment and its sputter coating assembly, wherein in one embodiment, a plurality of sputter deposition regions are formed in parallel to facilitate large-area or batch sputter deposition coating.

In order to achieve at least one of the above advantages, one aspect of the present invention provides a sputter coating device, which is used to bombard a target to form a film layer on the surface of a substrate by sputter coating, said The sputtering coating device includes: a reaction chamber, the reaction chamber has a reaction chamber; an electrode assembly; and a discharge coil assembly, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber, During sputtering coating, the substrate is accommodated in the reaction chamber, the target is arranged on the electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power supply, through The radio frequency power supply provides working radio frequency current for the electrode assembly and the discharge coil assembly to deposit and form a film layer on the surface of the substrate.

The sputtering coating device according to one embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked set on the medium layer.

The sputter coating device according to one embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on a discharge side of the discharge electrode.

The sputtering coating device according to one embodiment, wherein the discharge coil assembly is located below the electrode assembly, and the substrate is adapted to be disposed below the discharge coil assembly.

The sputtering coating device according to one embodiment, wherein the discharge coil assembly includes a coil and an isolation sleeve, and the coil is wound on the isolation sleeve.

The sputter coating device according to one embodiment, wherein the isolation sleeve has a first opening, a second opening, and an isolation space, and the isolation space communicates with the first opening and the second opening Outside, the first opening faces the target, and the second opening The mouth faces the base.

The sputtering coating device according to one embodiment, wherein one end of the electrode assembly and the discharge coil assembly are commonly connected to the output end of the radio frequency power supply, and the other end of the reaction chamber and the discharge coil assembly Commonly connected to the ground terminal of the RF power supply.

The sputter coating device according to one embodiment, wherein the central axis of the discharge coil assembly is perpendicular to the electrode assembly.

The sputtering coating device according to one embodiment, wherein the discharge coil assembly includes a coil, the coil is a planar spiral coil, and the coil is disposed on one side of the discharge electrode.

The sputter coating device according to one embodiment, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space.

The sputtering coating device according to one embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer surrounds the discharge electrode, and the target is arranged outside the dielectric layer .

The sputter coating device according to one embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on a discharge side of the discharge electrode.

The sputter coating device according to one embodiment, wherein the discharge coil assembly and the electrode assembly are arranged coaxially.

The sputtering coating device according to one embodiment, wherein the discharge electrode includes a plurality of electrode units, and a plurality of electrode units are arranged in a ring to form the inner space, and an inner space is formed between two adjacent electrode units. There is a gap.

According to one embodiment of the sputter coating device, an insulating material is filled in the gap.

The sputter coating device according to one embodiment, wherein the dielectric layer is a continuous cylindrical structure.

Another aspect of the present invention provides a sputter coating device, which is used to bombard a target to form a film layer on the surface of a substrate by sputter coating, The sputtering coating equipment includes: a reaction chamber, the reaction chamber has a reaction chamber; an electrode assembly; a discharge coil assembly; and a radio frequency power supply, the electrode assembly and the discharge coil assembly are arranged on In the reaction chamber of the reaction chamber, the target is arranged in the electrode assembly, and the substrate is accommodated in the reaction chamber during sputter coating, and the electrode assembly and the The discharge coil assembly is electrically connected to the radio frequency power supply, through which a working radio frequency current is provided for the electrode assembly and the discharge coil assembly to deposit and form a film on the surface of the substrate.

The sputtering coating device according to one embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked set on the medium layer.

The sputter coating apparatus according to one embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on a discharge side of the discharge electrode.

The sputtering coating device according to one embodiment, wherein the discharge coil assembly includes a coil and an isolation sleeve, and the coil is wound on the isolation sleeve.

The sputtering coating device according to one embodiment, wherein the discharge coil assembly includes a coil, the coil is a planar spiral coil, and the coil is disposed on one side of the electrode assembly.

The sputter coating device according to one embodiment, wherein the electrode assembly has an inner space, and the discharge coil assembly is disposed in the inner space.

The sputtering coating device according to one embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer surrounds the discharge electrode, and the target is arranged outside the dielectric layer .

Another aspect of the present invention provides a sputtering coating discharge assembly, the sputtering coating discharge assembly is suitable to be installed in a reaction chamber to perform sputter coating on a substrate in the reaction chamber, the sputtering Coating components include: An electrode assembly; and a coil, during sputter coating, the target is set on the electrode assembly, the coil is set on the target, the electrode assembly and the coil are electrically connected to a A radio frequency power supply, through which the radio frequency power supply provides working radio frequency current to the electrode assembly and the coil, so as to deposit and form a film layer on the surface of the substrate.

The sputtering coating discharge assembly according to one embodiment, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked A layer is disposed on the medium layer.

The sputter coating discharge assembly according to one embodiment, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on a discharge side of the discharge electrode.

The sputter coating discharge assembly according to one embodiment, wherein the coil is a planar spiral coil, and the coil is arranged on one side of the discharge electrode.

1: Sputtering coating device

10: Reaction chamber

100: matrix

101: reaction chamber

20: Electrode assembly

200: target

201: inner space

21: electrode

22: Dielectric layer

23: sealing cover

30:Electric coil assembly

31: Coil

32: Isolation sleeve

3201: first opening

3202: second opening

3203: isolated space

40: RF power supply

50: multi-layer bracket

Fig. 1 is a schematic diagram of a sputter coating device according to a first embodiment of the present invention.

2A-2B are schematic diagrams showing the relative positions of the electrode assembly and the discharge coil assembly in different implementations of the sputter coating device according to the first embodiment of the present invention.

3A-3B are schematic diagrams of the relative positions of the discharge coil assembly and the target in different implementations of the sputter coating device according to the first embodiment of the present invention.

Fig. 4 is a schematic diagram of a sputter coating device according to a second embodiment of the present invention.

Fig. 5 is a schematic diagram of a multi-layer support of a sputter coating device according to a second embodiment of the present invention.

Fig. 6 is a schematic diagram of a sputter coating device according to a third embodiment of the present invention.

Fig. 7 is a schematic diagram of a sputter coating device according to a fourth embodiment of the present invention.

Fig. 8 is a sputter coating device according to a fifth embodiment of the present invention.

The following description serves to disclose the present invention to enable those skilled in the art to carry out the present invention. The preferred embodiment in the following description is only as an example, those skilled in the art can think of other Obvious variant. The basic principles of the present invention defined in the following description can be applied to other embodiments, variations, improvements, equivalents and other technical solutions without departing from the spirit and scope of the present invention.

Those skilled in the art should understand that in the disclosure of the present invention, the terms "vertical", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, which are only for the convenience of describing the present invention and simplified description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, so the above terms should not be construed as limiting the present invention.

It can be understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element The quantity can be multiple, and the term "a" cannot be understood as a limitation on the quantity.

References to "one embodiment," "an embodiment," "example embodiment," "various embodiments," "some embodiments," etc. indicate that such embodiments describing the invention may include a particular feature, structure, or characteristic, But not every embodiment must include this feature, structure or characteristic. Furthermore, some embodiments may have some, all, or none of the features described for other embodiments.

Fig. 1 is a schematic diagram of a sputter coating device 1 according to a first embodiment of the present invention. 2A-2B are schematic diagrams showing the relative positions of the electrode assembly and the discharge coil assembly in different implementations of the sputter coating device according to the first embodiment of the present invention. 3A-3B are schematic diagrams of the relative positions of the discharge coil assembly and the target in different implementations of the sputter coating device according to the first embodiment of the present invention.

Referring to FIG. 1, the present invention provides a sputter coating device 1, which uses charged particles to bombard the surface of a target 200, so that the bombarded particles are deposited on the surface of a substrate 100 to form a coating or film. That is to say, the sputter coating device 1 forms a thin film on the surface of the substrate 100 or at a predetermined position by using the principle of the sputter coating process.

The sputter coating device 1 is suitable for forming an insulating film layer by sputter coating Or non-insulating film layers, for example but not limited to, coatings formed by metals, alloys, and conductive compounds. Examples of insulating coating materials are but not limited to: silicon oxide, aluminum oxide, zinc oxide, titanium oxide, zirconium oxide, aluminum nitride , silicon nitride, boron nitride, diamond-like carbon; conductive coatings are exemplified but not limited to: titanium nitride, chromium nitride, indium tin oxide, yttrium barium copper oxide, and the target material 200 is exemplified but not limited to silicon , aluminum, titanium, chromium, graphite, boron nitride, indium tin oxide, yttrium barium copper oxide.

The sputter coating device 1 includes a reaction chamber 10 , an electrode assembly 20 and a discharge coil assembly 30 . The reaction chamber 10 has a reaction chamber 101 for providing a working space for sputtering coating. During sputtering coating, the target 200 and the substrate 100 are accommodated in the reaction chamber 101 , and the target 200 is installed on the electrode assembly 20 . The electrode assembly 20 and the discharge coil assembly 30 are disposed in the reaction chamber 101 of the reaction chamber 10, so as to facilitate sputtering through the coordinated discharge of the electrode assembly 20 and the discharge coil assembly 30. shot coating. Preferably, the reaction chamber 10 is a metal chamber to cooperate with the electrode assembly 20 to discharge.

The reaction chamber 101 of the reaction chamber 10 is adapted to be fed with reaction raw materials required for film coating, plasma source gas or other auxiliary raw materials such as inert gases. That is to say, during sputtering coating, the materials constituting the target 200 and the raw material of the reactant gas passed in are deposited together to form a film layer.

The electrode assembly 20 and the discharge coil assembly 30 of the sputter coating device 1 can be electrically connected to a radio frequency power supply 40, and the radio frequency power supply 40 provides work for the electrode assembly 20 and the discharge coil assembly 30. radio frequency current. In one embodiment of the present invention, the electrode assembly 20 and the discharge coil assembly 30 are commonly connected to one radio frequency power supply 40, that is, the electrode assembly 20 and the discharge coil assembly 30 share a power supply, Or connected in parallel, they have a consistent operating potential. In another implementation of the present invention, the electrode assembly 20 and the discharge coil assembly 30 can be electrically connected to two independent radio frequency power sources 40 respectively, that is, the electrode assembly 20 and the discharge coil assembly Components 30 can each be controlled independently. When the electrode assembly 20 and the discharge coil assembly 30 are independently controlled, the electrode assembly 20 and the discharge coil assembly 30 can be respectively controlled by two power sources with different frequencies, For example, the discharge coil assembly 30 is loaded with a high frequency of 13.56MHz-60MHz, and the electrode assembly 20 is loaded with a low frequency of 300kHz-13.56MHz, thereby preventing mutual interference between the two power sources. Preferably, the electrode assembly 20 and the discharge coil assembly 30 share a power supply. When the electrode assembly 20 and the discharge coil assembly 30 share a power supply, there is no need to control the mutual synchronization between the power supplies, and no mutual interference.

It is worth mentioning that the radio frequency power supply 40 can be a part included in the sputter coating device 1, or it can be an independent device, such as a device purchased directly to work with the sputter coating device 1, The invention is not limited in this regard. The RF power supply 40 and the sputter coating device 1 constitute a sputter coating device. The radio frequency power supply 40 can be directly installed in the sputter coating device 1 or independently configured.

In one embodiment of the present invention, one end of the electrode assembly 20 and the discharge coil assembly 30 is commonly connected to the output end of the radio frequency power supply 40, and the other end of the reaction chamber 10 and the discharge coil assembly 30 One end is commonly connected to the ground end of the RF power supply 40 .

In one embodiment of the present invention, the sputter coating device 1 can be connected to a feeding device, wherein the feeding device is used to deliver reaction gas into the reaction chamber 101 of the reaction chamber 10 Raw materials or plasma sources, etc. The reaction chamber 10 can be connected to an air extraction device, wherein the air extraction device is used to extract the gas in the reaction chamber 101 of the reaction chamber 10 to maintain the reaction chamber 10. The reaction chamber 101 is maintained within a preset air pressure range.

The electrode assembly 20 and the discharge coil assembly 30 cooperate with each other to form a sputter coating assembly. The sputter coating assembly is disposed in the reaction chamber 101, and the sputter coating assembly is suitable for being connected to the radio frequency power supply 40 to perform sputter coating on the surface of the substrate.

The electrode assembly 20 includes a discharge electrode 21 and a dielectric layer 22 , and the dielectric layer 22 is disposed on the discharge electrode 21 . The target material 200 is suitable to be connected to the dielectric layer 22 . That is to say, the dielectric layer 22 is disposed between the discharge electrode 21 and the target 200 , or in other words, the dielectric layer 22 isolates the discharge electrode 21 and the target 200 . Further, the dielectric layer 22 and the target material 200 are disposed on the discharge side of the discharge electrode 21 .

It is worth mentioning that, when the target material 200 is a metal material, if the target material 200 is directly arranged on the discharge electrode 21, the target material 200 is connected to the discharge electrode 21 and becomes a direct discharge. part, rather than the excited target 200, so that the sputtering process cannot be carried out, and the setting of the dielectric layer 22 makes the metal type or conductivity type target 200 isolated from the discharge electrode 21, so that the The target 200 is located at a relatively close distance to the discharge electrode 21 , but is not directly connected to the electrode, so that the discharge electrode 21 can perform a better discharge function.

The dielectric layer 22 is used to prevent conduction current between the plasma and the discharge electrode 21 , so that a self-bias voltage is generated on the surface of the target 200 to realize high-efficiency sputtering. In comprehensive consideration of pressure resistance, heat resistance, heat transfer and capacitive coupling efficiency, the material of the dielectric layer 22 may be selected from one of: alumina, zirconia, boron nitride, quartz, mica, and polytetrafluoroethylene. Preferably, the thickness of the dielectric layer 22 is 0.2-2 mm. When the target material 200 is a conductive material, the dielectric layer 22 is indispensable; when the target material 200 is an insulating material, it can also play the role of the dielectric layer 22, and the dielectric layer 22 can be eliminated. .

The target material 200 is replaceably installed on the dielectric layer 22 , that is to say, different types of target materials 200 can be replaced according to the requirements of the coating type.

In an embodiment of the present invention, the discharge electrode 21 is a planar electrode, that is to say, the discharge electrode 21 is a planar structure or in other words, the discharge area of the discharge electrode 21 is a planar position. Furthermore, when the discharge electrode 21 is in operation, a discharge region is formed below, and the discharge region covers the target 200 .

In one embodiment of the present invention, the dielectric layer 22 is stacked on the discharge electrode 21 , that is, the dielectric layer 22 is also a planar plate material.

The target material 200 is stacked on the dielectric layer 22 , and the target material 200 is a planar plate material. That is to say, the discharge electrode 21 , the dielectric layer 22 and the target material 200 are sequentially stacked.

In one embodiment of the present invention, the discharge electrode 21, the dielectric layer 22 and the target 200 are stacked and fixed by a fixing element, and the fixing method of the fixing element For example but not limited to clamping fixation and extrusion fixation.

The discharge coil assembly 30 is disposed in an adjacent area of the electrode assembly 20 , and the adjacent position is such that the discharge area of the electrode assembly 20 and the discharge area of the discharge coil assembly 30 can reinforce each other. Preferably, in one embodiment of the present invention, the discharge coil assembly 30 is arranged below the electrode assembly 20, in this way, the discharge area of the discharge coil and the discharge of the electrode assembly 20 There are more areas in which the areas overlap in the forward direction, which is beneficial to strengthen the excitation effect on the target 200 . In another embodiment of the present invention, the discharge coil assembly 30 may also be arranged on the peripheral side of the electrode assembly 20 , such as in a way of being staggered from each other or surrounding below. 2A and 2B are schematic diagrams of the relative positions of the electrode assembly 20 and the discharge coil assembly 30 in different implementations of the sputter coating device 1 according to the first embodiment of the present invention.

During coating, the substrate 100 is disposed below or near the discharge coil assembly 30 . Furthermore, the base body 100 is set in the discharge area where the electrode assembly 20 and the discharge coil assembly 30 work together, or in other words, the base body 100 is set in the discharge area of the electrode assembly 20 and the discharge area. The area where the discharge areas of the coil assembly 30 overlap, so that the radio frequency discharge of the electrode assembly 20 and the discharge of the discharge coil assembly 30 can cooperate to act on the target 200, thereby efficiently exciting the target The atoms of the material 200 are quickly formed into a plasma with a higher density, that is, a film layer is rapidly formed on the surface of the substrate 100 .

The discharge coil assembly 30 includes a coil 31 and an isolation sleeve 32 , the coil 31 is helically wound on the isolation sleeve 32 . Preferably, the isolation sleeve 32 is made of insulating material, such as ceramic material. The isolation sleeve 32 constrains and isolates the inner and outer spaces of the isolation sleeve 32 . The discharge coil assembly 30 is substantially vertically disposed below the discharge electrode 21 . In other words, the central axis of the coil 31 is perpendicular to the electrode assembly 20 .

In one embodiment of the present invention, the isolation sleeve 32 has a first opening 3201, a second opening 3202 and an isolation space 3203, the first opening 3201 and the second opening 3202 are located on opposite sides side, the isolation space 3203 passes through the first opening 3201 and the second opening 3202 communicate with the outside respectively. The first opening 3201 is opposite to the electrode assembly 20 , that is to say, the discharge area of the electrode assembly 20 faces inside the isolation space 3203 . In other words, the isolation sleeve 32 isolates and confines the discharge area of the electrode assembly 20 in the isolation space 3203 .

The spacer sleeve 32 provides a winding attachment location for the coil 31 while confining the discharge area. Moreover, in the isolation space 3203, the discharge area of the electrode assembly 20 and the discharge area of the coil 31 overlap. In other words, during operation, both the discharge of the electrode assembly 20 and the discharge of the coil 31 are generated in the isolation space 3203 .

The base body 100 faces the second opening 3202 , or in other words, the base body 100 is disposed near the second opening 3202 . Furthermore, the base body 100 is disposed at a position adjacent to the lower part of the second opening 3202 .

In one embodiment of the present invention, the spacer sleeve 32 is a cylindrical shape extending straight, and the positions of the electrode assembly 20, the target 200, the spacer sleeve 32 and the coil 31 are along the direction of gravity. set up or arranged vertically. The sputtering deposition area is located near the electrode and the discharge coil, such as above, below, vertically, obliquely upward or obliquely downward.

In other embodiments of the present invention, the electrode assembly 20 , the discharge coil assembly 30 and the base body 100 may also be arranged in a misaligned manner.

2A and 2B are schematic diagrams of the relative positions of the discharge coil assembly 30 and the target 200 in different implementations of the sputter coating device 1 according to the first embodiment of the present invention. In one embodiment, referring to FIG. 1 , the substrate 100 is disposed below the discharge coil, or in other words, the substrate 100 is disposed below the second opening 3202 . Referring to FIG. 2A , at least two of the discharge coil assemblies 30 are arranged at staggered positions below the electrode assembly 20 , such as in a surrounding position or symmetrically distributed. Referring to FIG. 2B , at least two of the discharge coil assemblies 30 are disposed below the electrode assembly 20 . In another embodiment, referring to FIG. 3A , the base body 100 is disposed below the discharge coil assembly 30 . Referring to FIG. 3B , a plurality of bases 100 surround the discharge coil assembly 30 .

It is worth mentioning that Fig. 1, Fig. 2A-2B and Fig. 3A-3B respectively illustrate the relative positional relationship between the discharge assembly and the discharge coil assembly 30 as well as the discharge coil assembly 30 and the target 200 in different embodiments. In the embodiment, the positional relationship between the discharge electrode 21, the coil 31 and the target 200 can also be a combination of the above-mentioned arrangements or other arrangement relations. On the basis of not departing from the basic interaction principle of the present invention, the present invention There are no limitations in this respect.

In one embodiment of the present invention, the discharge electrode 21 and the coil 31 are connected to a water cooling device to prevent the discharge electrode 21 and the coil 31 from overheating. A shielding layer is provided around the coil 31 to prevent the coil 31 from discharging to the outside.

In one embodiment of the present invention, the overall assembly method of the sputter coating device 1 is as follows: the radio frequency power supply 40 is installed outside the reaction chamber 10, the discharge electrode 21, the dielectric layer 22, The target 200 , the coil 31 and the isolation sleeve 32 are installed inside the reaction chamber 10 . The dielectric layer 22 and the target material 200 are sequentially installed under the discharge electrode 21 . The isolation sleeve 32 is installed below the target 200 , and the coil 31 is wound outside the isolation sleeve 32 . One end of the electrode and the coil 31 is connected to the output end of the RF power supply 40 outside the reaction chamber 10 . The reaction chamber 10 and the other end of the coil 31 are commonly connected to the ground terminal of the RF power supply 40 . The substrate 100 is disposed under the coil 31 , facing the target 200 at a certain distance away from the target 200 , so that atoms of the sputtered target 200 are deposited on the surface of the substrate 100 to form a thin film.

In one embodiment of the present invention, the coating working process of the sputter coating device 1 is as follows: during sputter coating, the reaction chamber 10 is evacuated and filled with inert gas and reactive gas, and the radio frequency is activated. Power supply 40, on the one hand, the space induction discharge of the radio frequency current in the coil 31 close to the target 200 inside the isolation sleeve 32 generates high-density plasma; on the other hand, the radio frequency voltage on the electrode and The plasma in the space near the target 200 works together to generate a self-bias voltage on the surface of the target 200, and the ions of the accelerated plasma bombard the The target material 200 sputters the atoms of the target material 200 to fly out, and the sputtered atoms of the target material 200 are deposited on the surface of the substrate 100 below to form a thin film.

Fig. 4 is a schematic diagram of a sputter coating device 1 according to a second embodiment of the present invention.

In this embodiment of the present invention, the electrode assembly 20 of the sputter coating device 1 has an inner space 201 , and the discharge coil assembly 30 is disposed in the inner space 201 . In other words, the electrode assembly 20 is surrounded by the coil 31 assembly.

The electrode assembly 20 includes a discharge electrode 21 and a dielectric layer 22 , and the dielectric layer 22 is disposed on the discharge electrode 21 . The target material 200 is suitable to be connected to the dielectric layer 22 . That is to say, the dielectric layer 22 is disposed between the discharge electrode 21 and the target 200 , or in other words, the dielectric layer 22 isolates the discharge electrode 21 and the target 200 . Further, the dielectric layer 22 and the target material 200 are disposed on the discharge side of the discharge electrode 21 .

Further, the coil 31 is located inside the discharge electrode 21 , the target 200 is located outside the discharge electrode 21 , and the substrate 100 is suitable to be arranged in the space outside the target 200 .

In one embodiment of the present invention, the coil 31 is a solenoid coil, and the coil 31 is generally arranged parallel to the discharge electrode 21 as a whole, for example but not limited thereto. Both the coil 31 and the discharge electrode 21 are arranged along the vertical direction, that is, along the gravity direction. In another embodiment of the present invention, the coil 31 is a solenoid coil, and the coil 31 is generally arranged vertically to the discharge electrode 21, for example, the discharge electrode 21 is arranged along the gravitational direction or the vertical direction, and the The coils 31 are arranged in the horizontal direction, or the discharge electrodes 21 are arranged in the horizontal direction, and the coils 31 are arranged in the gravitational direction or the vertical direction.

The discharge electrode 21 includes a plate unit, and a plurality of the plate units surround and form the inner space 201 in isolation. In one embodiment of the present invention, a gap is provided between two adjacent pole plate units, and the gap isolates the two pole plate units to prevent the coil 31 from being induced in the discharge electrode 21. raw vortex. In one embodiment of the present invention, the gap is filled with an insulating material to prevent the coil 31 from inducing eddy currents in the discharge electrode 21 . Two adjacent pole plate units are electrically connected by wires.

Further, the dielectric layer 22 surrounds the discharge electrode 21 . Correspondingly, the dielectric layer 22 forms a continuous annular structure and is stacked outside the discharge electrode 21 .

In one embodiment, the target material 200 is configured as a continuous ring, that is, the shape of the target material 200 is substantially consistent with the shape of the dielectric layer 22 . In another embodiment, the target material 200 is configured to conform to the shape of the polar plate unit, such as a strip shape, and is arranged at intervals outside the dielectric layer 22 .

In one embodiment of the present invention, the discharge electrode 21 , the dielectric layer 22 and the target 200 are sequentially connected together from the inside to the outside, and the coil 31 is installed on the inside of the electrode assembly 20 . Space 201 , the coil 31 is coaxially arranged with the discharge electrode 21 . The inner space 201 located inside the dielectric layer 22 is isolated from the reaction chamber 101 of the reaction chamber 10 .

In one embodiment of the present invention, the sputter coating device 1 includes a set of sealing covers 23, and a set of sealing covers 23 are respectively sealed and arranged on both ends of the electrode assembly 20. Preferably, the dielectric layer Both ends of the discharge electrode 22 protrude from the discharge electrode 21 , and a set of sealing caps 23 are connected to both ends of the dielectric layer 22 .

It is worth mentioning that the inner space 201 of the discharge electrode 21 is sealed and isolated from the reaction chamber 101, so the inner space 201 can be filled with heat dissipation material or liquid to dissipate the coil 31. heat generated during work. When the coating works, the internal space of the dielectric layer 22 is isolated from the reaction chamber 101, and the internal space 201 does not need to be evacuated to avoid internal discharge of the coil 31; on the other hand, the internal space of the dielectric layer 22 The discharge electrode 21 and the coil 31 are cooled by cooling air flow to avoid overheating.

When the target 200 is a conductive material, the discharge electrode 21 is composed of a plurality of separated electrode units, and the gap extending in the axial direction is provided between two adjacent electrode units; When the target 200 is an insulating material, the discharge electrode 21 may be in the shape of a cylinder surrounded by plate-shaped electrode units.

The substrate 100 is arranged outside the target 200, that is to say, in the barrel The substrate 100 can be arranged around the electrode assembly in the shape, that is, a larger coating space is formed, so as to facilitate batch or large-area coating.

In one embodiment of the present invention, referring to FIG. 5 , the sputter coating device 1 includes a multi-layer support 50 surrounding the electrode assembly 20 . A plurality of the substrates 100 can be placed on the multi-layer support 50 . That is to say, coating can be performed in the surrounding space outside the electrode assembly 20 and at different heights.

In one embodiment of the present invention, the overall assembly method of the sputter coating device 1 is as follows: the radio frequency power supply 40 is installed outside the reaction chamber 10, the discharge electrode 21, the dielectric layer 22, The target 200 , the coil 31 and the isolation sleeve 32 are installed inside the reaction chamber 10 . The electrode units in the shape of a plurality of columnar panels form a cylindrical shape, and an axial gap or insulating material is left between the columnar panels, and the columnar panels are connected by wires. The medium layer 22 is a complete cylinder. When the target 200 is a conductive material, it is surrounded by a plurality of column panels to form a cylindrical shape, and there are axial gaps between each column panel. When the target 200 is an insulating material, it can be formed by a plurality of column panels. The panels form a cylinder, which can also be a complete cylinder.

The discharge electrode 21 , the dielectric layer 22 and the target 200 are sequentially fitted together from inside to outside. The coil 31 is installed inside the discharge electrode 21 and is coaxial with the discharge electrode 21 ; the inner space of the dielectric layer 22 is isolated from the reaction chamber 101 without vacuuming. One end of the discharge electrode 21 and the coil 31 is commonly connected to the output end of the radio frequency power supply 40 outside the reaction chamber 10; the other end of the reaction chamber 10 and the coil 31 is commonly connected to the The ground terminal of the radio frequency power supply 40 mentioned above. The substrate 100 is disposed outside the target 200 , facing the target 200 at a certain distance away from the target 200 , so that atoms of the sputtered target 200 are deposited on the surface of the substrate 100 to form a thin film.

In one embodiment of the present invention, the coating working process of the sputter coating device 1 is as follows: during sputter coating, the reaction chamber 10 is evacuated and filled with inert gas and reactive gas, and the radio frequency is activated. Power supply 40, on the one hand, the radio frequency current in the coil 31 is in the target 200 On the other hand, the RF voltage on the discharge electrode 21 interacts with the plasma in the space near the target 200 to generate self-biased plasma on the surface of the target 200 The voltage is set, and the ions of the accelerated plasma bombard the target 200, and the atoms of the target 200 are sputtered out, and the sputtered atoms of the target 200 are deposited on the surface of the substrate 100 to form a thin film.

FIG. 6 is a schematic diagram of a sputter coating device 1 according to a third embodiment of the present invention.

In this embodiment of the present invention, different from the first embodiment, the sputter coating device 1 includes two sets of electrode assemblies 20 and discharge coil assemblies 30, each of which works cooperatively to increase the overall coating area.

Further, two groups of the electrode assembly 20 and the discharge coil assembly 30 are arranged in parallel. That is to say, one end of the two groups of electrode assemblies 20 is commonly connected to the output end of the radio frequency power supply 40, one end of the two groups of the discharge coil assemblies 30 is respectively connected to the output end of the radio frequency power supply 40, and the reaction chamber 10 connected to the ground terminal of the radio frequency power supply 40 , and the other ends of the two sets of discharge coil assemblies 30 are connected to the ground terminal of the radio frequency power supply 40 .

Further, the two targets 200 of the two groups of electrode assemblies 20 are coplanar and close to each other, and the two coils 31 of the two discharge coil assemblies 30 are wound in opposite directions to reduce series inductance.

In this embodiment of the present invention, the parallel connection of two sets of electrode assemblies 20 and discharge coils is taken as an example for illustration. In other embodiments of the present invention, more sets of electrode assemblies 20 and discharge coils may also be included. , expand horizontally in a similar manner, and the coils 31 that are close to each other are wound in opposite directions.

Fig. 7 is a schematic diagram of a sputter coating device 1 according to a fourth embodiment of the present invention.

In this embodiment of the present invention, different from the above-mentioned first embodiment, the dielectric layer 22 is not provided under the discharge electrode 21 . That is, the target 200 is directly disposed under the discharge electrode 21 . This embodiment is suitable for insulating material coating.

A similar change can also be made in the above-mentioned second embodiment, and the dielectric layer 22 is omitted for coating with an insulating material.

Fig. 8 is a schematic diagram of a sputter coating device 1 according to a fifth embodiment of the present invention.

In this embodiment of the invention, the discharge coil assembly 30 includes a coil 31, which is a planar coil. The planar coil is directly disposed on one side of the discharge electrode 21 . Furthermore, the coil 31 is detachably fixed on the non-discharge side of the discharge electrode 21 , in other words, the target 200 and the coil 31 are respectively located on both sides of the discharge electrode 21 .

Further, the discharge electrode 21 includes a plate unit, and a plurality of the plate units are arranged in isolation. In one embodiment of the present invention, a gap is provided between two adjacent pole plate units, and the gap isolates the two pole plate units to prevent the coil 31 from being induced in the discharge electrode 21. raw vortex. In one embodiment of the present invention, the gap is filled with an insulating material to prevent the coil 31 from inducing eddy currents in the discharge electrode 21 . Two adjacent pole plate units are electrically connected by wires.

It is worth mentioning that, in this embodiment of the present invention, the discharge electrode 21 assembly 20 and the coil 31 are integrally arranged, thereby forming an integrally movable assembly, which is convenient to be integrally installed in different working positions , to avoid providing additional installation conditions for the coil 31 .

The electrode assembly 20 and the coil 31 of the discharge coil assembly 30 cooperate with each other to form a sputter coating assembly. The sputter coating assembly is disposed in the reaction chamber 101, and the sputter coating assembly is suitable for being connected to the radio frequency power supply 40 to perform sputter coating on the surface of the substrate.

It can be generally understood from the above embodiments that, compared with the sputtering coating method of the prior art, the technical solution of the present invention has many advantages:

From the working principle, there is no need to form a magnetic field to increase the plasma density and avoid the electron gyration caused by the existence of the magnetic field.

Through the cooperation of the discharge coil and the electrode, a high-density plasma is formed in the space near the target to form a film layer quickly.

Capable of forming a film of insulating or non-insulating material, that is, a film material The type limitation of the method is small; it does not use a magnetic field to work, avoiding the spatial inhomogeneity produced by the magnetically confined plasma, and the formed film layer is more uniform.

The electrode, the target material and the discharge coil cover each other with a large area, so that the target material is etched uniformly and the utilization rate of the target material is high.

The dielectric layer is used to isolate the electrode and the target, so that different types of targets can be efficiently deposited on the surface of the substrate without affecting the deposition efficiency due to the electrical properties of the target.

The discharge area of the coil is constrained by the isolation sleeve, and the discharge area of the electrode and the discharge area of the discharge coil are positively combined and directly deposited on the surface of the substrate.

In one embodiment, the sputter deposition area is located below the electrodes and the discharge coil, and is planarly deposited in the direction of gravity.

In one embodiment, the deposition area is located in the parallel area of the electrode and the coil, so as to facilitate multi-layer or batch coating around the target.

In one embodiment, multiple sputtering deposition regions are formed in parallel, so as to facilitate large-area or batch sputtering deposition coating.

Those skilled in the art should understand that the embodiments of the present invention shown in the above description and drawings are only examples and do not limit the present invention. The objects of the present invention have been fully and effectively accomplished. The functions and structural principles of the present invention have been shown and described in the embodiments, and the embodiments of the present invention may have any deformation or modification without departing from the principles.

10: Reaction chamber

101: reaction chamber

20: Electrode assembly

200: target

21: electrode

22: Dielectric layer

30:Electric coil assembly

31: Coil

32: Isolation sleeve

3201: first opening

3202: second opening

3203: isolated space

40: RF power supply

Claims (28)

A sputtering coating device, the sputtering coating device is used for bombarding a target to form a film layer on the surface of a substrate by means of sputtering coating, characterized in that the sputtering coating device includes: a reaction chamber Body, the reaction chamber has a reaction chamber; an electrode assembly; and a discharge coil assembly, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber, when sputtering coating, the substrate is housed in the reaction chamber, the target is set on the electrode assembly, the electrode assembly and the discharge coil assembly are electrically connected to a radio frequency power supply, and the electrode assembly is powered by the radio frequency power supply and the discharge coil assembly provide working radio frequency current to deposit and form a film layer on the surface of the substrate. The sputtering coating device according to claim 1, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked set on the medium layer. The sputtering coating device according to claim 1, wherein the electrode assembly includes a discharge electrode, and the target is directly arranged on the discharge side of the discharge electrode. The sputtering coating device according to claim 1, wherein the discharge coil assembly is located below the electrode assembly, and the substrate is adapted to be disposed below the discharge coil assembly. The sputtering coating device according to any one of Claims 1 to 4, wherein the discharge coil assembly includes a coil and an isolation sleeve, and the coil is wound on the isolation sleeve. The sputter coating device according to claim 5, wherein the isolation sleeve has a first opening, a second opening and an isolation space, and the isolation space communicates with the first opening and the second opening Externally, the first opening faces the target, and the second opening faces the substrate. The sputtering coating device according to any one of claim items 1 to 4, wherein one end of the electrode assembly and the discharge coil assembly is commonly connected to the output end of the radio frequency power supply, and the reaction chamber and the discharge coil The other ends of the components are commonly connected to the ground of the RF power supply. The sputter coating device according to any one of claims 1 to 4, wherein the central axis of the discharge coil assembly is perpendicular to the electrode assembly. The sputter coating device according to any one of claims 1 to 4, wherein the electrode assembly, the discharge coil assembly and the substrate are arranged in a vertical direction. The sputtering coating device according to any one of claims 1 to 4, wherein the discharge coil assembly includes a coil, the coil is a planar spiral coil, and the coil is arranged on one side of the electrode assembly. The sputter coating device according to claim 1, wherein the electrode assembly has an inner space, and the discharge coil assembly is arranged in the inner space. The sputtering coating device according to claim 11, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer surrounds the discharge electrode, and the target is arranged outside the dielectric layer . The sputtering coating device according to claim 11, wherein the electrode assembly includes a discharge electrode, and the target is directly arranged on the discharge side of the discharge electrode. The sputter coating device according to any one of Claims 12 to 13, wherein the discharge coil assembly and the electrode assembly are arranged coaxially. The sputtering coating device according to any one of claim items 12 to 13, wherein the discharge electrode includes a plurality of electrode units, and the circular arrangement of a plurality of the electrode units forms the inner space, and two adjacent electrodes There is a gap between the units. The sputter coating device as claimed in claim 15, wherein an insulating material is filled in the gap. The sputter coating device according to claim 12, wherein the dielectric layer is a continuous cylindrical structure. A sputtering coating device, which is used to bombard a target to form a film layer on the surface of a substrate by means of sputtering coating, characterized in that the sputtering coating device includes: a reaction chamber Body, the reaction chamber has a reaction chamber; An electrode assembly; a discharge coil assembly; and a radio frequency power supply, the electrode assembly and the discharge coil assembly are arranged in the reaction chamber of the reaction chamber, and the target is arranged in the electrode assembly , during sputtering coating, the substrate is accommodated in the reaction chamber, the electrode assembly and the discharge coil assembly are electrically connected to the radio frequency power supply, and the electrode assembly and the discharge coil assembly are electrically connected by the radio frequency power supply The discharge coil assembly provides working radio frequency current to deposit and form a film layer on the surface of the substrate. The sputtering coating device according to claim 18, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked set on the medium layer. The sputtering coating device according to claim 18, wherein the electrode assembly includes a discharge electrode, and the target is directly arranged on the discharge side of the discharge electrode. The sputtering coating device as claimed in any one of claims 18 to 20, wherein the discharge coil assembly includes a coil and an isolation sleeve, and the coil is wound on the isolation sleeve. The sputtering coating device according to any one of claims 18 to 20, wherein the discharge coil assembly includes a coil, the coil is a planar spiral coil, and the coil is arranged on one side of the electrode assembly. The sputtering coating device according to claim 18, wherein the electrode assembly has an inner space, and the discharge coil assembly is arranged in the inner space. The sputtering coating device according to claim 23, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer surrounds the discharge electrode, and the target is arranged outside the dielectric layer . A sputtering coating discharge assembly, the sputtering coating discharge assembly is suitable for being installed in a reaction chamber to perform sputter coating on a substrate in the reaction chamber, characterized in that the sputtering coating discharge assembly It includes: an electrode assembly; and a coil, a target is set on the electrode assembly during sputter coating, and the coil is set Placed on the target, the electrode assembly and the coil are electrically connected to a radio frequency power supply, and the electrode assembly and the coil are provided with a working radio frequency current through the radio frequency power supply to deposit on the surface of the substrate Form a film layer. The sputtering coating discharge assembly as claimed in claim 25, wherein the electrode assembly includes a discharge electrode and a dielectric layer, the dielectric layer is stacked on the discharge side of the discharge electrode, and the target is stacked A layer is disposed on the medium layer. The sputtering coating discharge assembly as claimed in claim 25, wherein the electrode assembly includes a discharge electrode, and the target is directly disposed on the discharge side of the discharge electrode. The sputtering coating discharge assembly as claimed in any one of claims 26 to 27, wherein the coil is a planar spiral coil, and the coil is arranged on one side of the discharge electrode.

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