TWI800880B - 具有改良連線負載的電路模組 - Google Patents
具有改良連線負載的電路模組 Download PDFInfo
- Publication number
- TWI800880B TWI800880B TW110128541A TW110128541A TWI800880B TW I800880 B TWI800880 B TW I800880B TW 110128541 A TW110128541 A TW 110128541A TW 110128541 A TW110128541 A TW 110128541A TW I800880 B TWI800880 B TW I800880B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit module
- line load
- improved line
- improved
- load
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110128541A TWI800880B (zh) | 2021-08-03 | 2021-08-03 | 具有改良連線負載的電路模組 |
CN202111294069.6A CN115910139A (zh) | 2021-08-03 | 2021-11-03 | 具有改良连线负载的电路模块 |
US17/521,894 US11742000B2 (en) | 2021-08-03 | 2021-11-09 | Circuit module with improved line load |
US18/221,111 US20230352060A1 (en) | 2021-08-03 | 2023-07-12 | Circuit module with improved line load |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110128541A TWI800880B (zh) | 2021-08-03 | 2021-08-03 | 具有改良連線負載的電路模組 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202308315A TW202308315A (zh) | 2023-02-16 |
TWI800880B true TWI800880B (zh) | 2023-05-01 |
Family
ID=85153773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110128541A TWI800880B (zh) | 2021-08-03 | 2021-08-03 | 具有改良連線負載的電路模組 |
Country Status (3)
Country | Link |
---|---|
US (2) | US11742000B2 (zh) |
CN (1) | CN115910139A (zh) |
TW (1) | TWI800880B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6134163A (en) * | 1997-05-29 | 2000-10-17 | Nec Corporation | Semiconductor memory device with independently operating memory banks |
US20080253210A1 (en) * | 2007-04-11 | 2008-10-16 | Hynix Semiconductor Inc. | Semiconductor memory apparatus |
CN106373615A (zh) * | 2015-07-20 | 2017-02-01 | 毛冬冬 | 一种读出速度可通过位线负载调节的otp存储器设计 |
US20190214066A1 (en) * | 2018-01-05 | 2019-07-11 | Winbond Electronics Corp. | Memory device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3860403B2 (ja) * | 2000-09-25 | 2006-12-20 | 株式会社東芝 | 半導体メモリ装置 |
JP5178182B2 (ja) * | 2007-12-25 | 2013-04-10 | 株式会社東芝 | 半導体記憶装置 |
CN101866580B (zh) * | 2010-06-21 | 2011-11-16 | 旭曜科技股份有限公司 | 转压器 |
US9337842B1 (en) * | 2014-11-24 | 2016-05-10 | Via Alliance Semiconductor Co., Ltd. | Low voltage differential signaling (LVDS) driving circuit |
-
2021
- 2021-08-03 TW TW110128541A patent/TWI800880B/zh active
- 2021-11-03 CN CN202111294069.6A patent/CN115910139A/zh active Pending
- 2021-11-09 US US17/521,894 patent/US11742000B2/en active Active
-
2023
- 2023-07-12 US US18/221,111 patent/US20230352060A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6134163A (en) * | 1997-05-29 | 2000-10-17 | Nec Corporation | Semiconductor memory device with independently operating memory banks |
US20080253210A1 (en) * | 2007-04-11 | 2008-10-16 | Hynix Semiconductor Inc. | Semiconductor memory apparatus |
CN106373615A (zh) * | 2015-07-20 | 2017-02-01 | 毛冬冬 | 一种读出速度可通过位线负载调节的otp存储器设计 |
US20190214066A1 (en) * | 2018-01-05 | 2019-07-11 | Winbond Electronics Corp. | Memory device |
Also Published As
Publication number | Publication date |
---|---|
US20230040348A1 (en) | 2023-02-09 |
US20230352060A1 (en) | 2023-11-02 |
TW202308315A (zh) | 2023-02-16 |
CN115910139A (zh) | 2023-04-04 |
US11742000B2 (en) | 2023-08-29 |
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