TWI800713B - 光感測元件及其製造方法 - Google Patents

光感測元件及其製造方法 Download PDF

Info

Publication number
TWI800713B
TWI800713B TW109108747A TW109108747A TWI800713B TW I800713 B TWI800713 B TW I800713B TW 109108747 A TW109108747 A TW 109108747A TW 109108747 A TW109108747 A TW 109108747A TW I800713 B TWI800713 B TW I800713B
Authority
TW
Taiwan
Prior art keywords
photo
manufacturing
sensing device
sensing
Prior art date
Application number
TW109108747A
Other languages
English (en)
Other versions
TW202125790A (zh
Inventor
陳嘉展
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202125790A publication Critical patent/TW202125790A/zh
Application granted granted Critical
Publication of TWI800713B publication Critical patent/TWI800713B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW109108747A 2019-12-19 2020-03-17 光感測元件及其製造方法 TWI800713B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/719,987 US11398512B2 (en) 2019-12-19 2019-12-19 Photo-sensing device and manufacturing method thereof
US16/719,987 2019-12-19

Publications (2)

Publication Number Publication Date
TW202125790A TW202125790A (zh) 2021-07-01
TWI800713B true TWI800713B (zh) 2023-05-01

Family

ID=76383111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109108747A TWI800713B (zh) 2019-12-19 2020-03-17 光感測元件及其製造方法

Country Status (3)

Country Link
US (2) US11398512B2 (zh)
CN (1) CN113013182A (zh)
TW (1) TWI800713B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11398512B2 (en) * 2019-12-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photo-sensing device and manufacturing method thereof
US11961854B2 (en) * 2020-12-29 2024-04-16 Sywe Neng Lee Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201017873A (en) * 2008-09-29 2010-05-01 Sony Corp Solid-state imaging device, method of manufacturing the same, and electronic apparatus
WO2011155009A1 (ja) * 2010-06-08 2011-12-15 パナソニック株式会社 固体撮像装置及びその製造方法
US20140042576A1 (en) * 2012-08-08 2014-02-13 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US8692345B2 (en) * 2011-08-09 2014-04-08 Canon Kabushiki Kaisha Image sensing device, image sensing system, and method for manufacturing image sensing device
TW201640660A (zh) * 2015-05-15 2016-11-16 台灣積體電路製造股份有限公司 背光影像感測器

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072364A (ja) * 2003-08-26 2005-03-17 Fuji Film Microdevices Co Ltd 固体撮像素子及びその製造方法
JP2006049825A (ja) * 2004-07-08 2006-02-16 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
KR100642764B1 (ko) * 2004-09-08 2006-11-10 삼성전자주식회사 이미지 소자 및 그 제조 방법
US20080017945A1 (en) * 2006-07-24 2008-01-24 Yi-Tyng Wu Method for fabricating color filters
KR100937654B1 (ko) * 2006-12-12 2010-01-19 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
KR20090034429A (ko) * 2007-10-04 2009-04-08 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US20090189055A1 (en) * 2008-01-25 2009-07-30 Visera Technologies Company Limited Image sensor and fabrication method thereof
US8229255B2 (en) * 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP2010239076A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP5504695B2 (ja) * 2009-05-29 2014-05-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
KR20110095696A (ko) * 2010-02-19 2011-08-25 삼성전자주식회사 씨모스 이미지 센서
JP5595298B2 (ja) * 2010-04-06 2014-09-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP2012114155A (ja) * 2010-11-22 2012-06-14 Panasonic Corp 固体撮像装置とその製造方法
US9116319B2 (en) * 2010-12-17 2015-08-25 Stmicroelectronics, Inc. Photonic integrated circuit having a plurality of lenses
JP2013012506A (ja) * 2011-06-28 2013-01-17 Sony Corp 固体撮像素子の製造方法、固体撮像素子、電子機器の製造方法、および電子機器。
JP6061544B2 (ja) * 2012-08-07 2017-01-18 キヤノン株式会社 撮像装置の製造方法
US8532448B1 (en) * 2012-09-16 2013-09-10 Solarsort Technologies, Inc. Light emitting pixel structure using tapered light waveguides, and devices using same
TW201724483A (zh) * 2015-12-22 2017-07-01 力晶科技股份有限公司 30078 新竹科學工業園區力行一路12號 影像感測元件的光管結構及其製造方法
US20170250211A1 (en) * 2016-02-25 2017-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor image sensor device and manufacturing method of the same
US10304885B1 (en) * 2017-11-15 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Color filter uniformity for image sensor devices
US11398512B2 (en) * 2019-12-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photo-sensing device and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201017873A (en) * 2008-09-29 2010-05-01 Sony Corp Solid-state imaging device, method of manufacturing the same, and electronic apparatus
WO2011155009A1 (ja) * 2010-06-08 2011-12-15 パナソニック株式会社 固体撮像装置及びその製造方法
US8692345B2 (en) * 2011-08-09 2014-04-08 Canon Kabushiki Kaisha Image sensing device, image sensing system, and method for manufacturing image sensing device
US20140042576A1 (en) * 2012-08-08 2014-02-13 Canon Kabushiki Kaisha Photoelectric conversion apparatus
TW201640660A (zh) * 2015-05-15 2016-11-16 台灣積體電路製造股份有限公司 背光影像感測器

Also Published As

Publication number Publication date
US20210193718A1 (en) 2021-06-24
CN113013182A (zh) 2021-06-22
US11398512B2 (en) 2022-07-26
US20220320169A1 (en) 2022-10-06
TW202125790A (zh) 2021-07-01

Similar Documents

Publication Publication Date Title
EP3855495A4 (en) DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
EP3893279A4 (en) DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP3968384A4 (en) DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
EP3926700A4 (en) OLED DEVICE AND METHOD OF MANUFACTURING IT
EP3751449A4 (en) TERMINAL DEVICE AND ITS MANUFACTURING PROCESS
EP3843132A4 (en) SEMICONDUCTOR DEVICE AND ITS PRODUCTION PROCESS
EP3989419A4 (en) ROTOR MANUFACTURING METHOD AND ROTOR MANUFACTURING DEVICE
EP3766636A4 (en) POLISHING DEVICE AND MANUFACTURING PROCESS
EP3780109A4 (en) DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE
EP3902048A4 (en) CELL PREPARATION DEVICE AND METHOD
EP3965173A4 (en) LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE THEREOF
TWI800713B (zh) 光感測元件及其製造方法
EP3848957A4 (en) SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE
EP3989361A4 (en) ANTENNA MANUFACTURING METHOD AND ANTENNA DEVICE
EP3972002A4 (en) LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
TWI800548B (zh) 發光裝置及其製作方法
EP3595082B8 (en) Integrated device and manufacturing method thereof
EP3920209A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
EP4071818A4 (en) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
EP3842574A4 (en) SEMICONDUCTOR DEVICE AND ITS PRODUCTION PROCESS
EP3974085A4 (en) AM DEVICE AND METHOD FOR MAKING A FORM OBJECT
EP3792980A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD FOR IT
EP3961710A4 (en) DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
EP3666856A4 (en) METHOD AND DEVICE FOR PRODUCING ETHYLENE
EP3741427A4 (en) NEUROSTIMULATOR AND MANUFACTURING METHOD FOR IT