TWI800235B - 原子層沉積系統 - Google Patents

原子層沉積系統 Download PDF

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Publication number
TWI800235B
TWI800235B TW111102973A TW111102973A TWI800235B TW I800235 B TWI800235 B TW I800235B TW 111102973 A TW111102973 A TW 111102973A TW 111102973 A TW111102973 A TW 111102973A TW I800235 B TWI800235 B TW I800235B
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TW
Taiwan
Prior art keywords
layer deposition
atomic layer
deposition system
atomic
layer
Prior art date
Application number
TW111102973A
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English (en)
Other versions
TW202330983A (zh
Inventor
吳學憲
詹志遠
賴奕廷
Original Assignee
矽碁科技股份有限公司
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Priority to TW111102973A priority Critical patent/TWI800235B/zh
Application granted granted Critical
Publication of TWI800235B publication Critical patent/TWI800235B/zh
Publication of TW202330983A publication Critical patent/TW202330983A/zh

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TW111102973A 2022-01-24 2022-01-24 原子層沉積系統 TWI800235B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW111102973A TWI800235B (zh) 2022-01-24 2022-01-24 原子層沉積系統

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111102973A TWI800235B (zh) 2022-01-24 2022-01-24 原子層沉積系統

Publications (2)

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TWI800235B true TWI800235B (zh) 2023-04-21
TW202330983A TW202330983A (zh) 2023-08-01

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TW111102973A TWI800235B (zh) 2022-01-24 2022-01-24 原子層沉積系統

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TW (1) TWI800235B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183171A1 (en) * 1999-03-11 2003-10-02 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
TW201546315A (zh) * 2014-03-18 2015-12-16 Tokyo Electron Ltd 成膜裝置
TW201840895A (zh) * 2016-12-21 2018-11-16 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202020216A (zh) * 2018-08-10 2020-06-01 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202202655A (zh) * 2020-07-10 2022-01-16 天虹科技股份有限公司 可減少前驅物沉積的原子層沉積設備與製程方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183171A1 (en) * 1999-03-11 2003-10-02 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
TW201546315A (zh) * 2014-03-18 2015-12-16 Tokyo Electron Ltd 成膜裝置
TW201840895A (zh) * 2016-12-21 2018-11-16 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202020216A (zh) * 2018-08-10 2020-06-01 日商東京威力科創股份有限公司 氣體處理裝置及氣體處理方法
TW202202655A (zh) * 2020-07-10 2022-01-16 天虹科技股份有限公司 可減少前驅物沉積的原子層沉積設備與製程方法

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Publication number Publication date
TW202330983A (zh) 2023-08-01

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