TWI799895B - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

Info

Publication number
TWI799895B
TWI799895B TW110122231A TW110122231A TWI799895B TW I799895 B TWI799895 B TW I799895B TW 110122231 A TW110122231 A TW 110122231A TW 110122231 A TW110122231 A TW 110122231A TW I799895 B TWI799895 B TW I799895B
Authority
TW
Taiwan
Prior art keywords
treatment device
plasma treatment
plasma
treatment
Prior art date
Application number
TW110122231A
Other languages
Chinese (zh)
Other versions
TW202209405A (en
Inventor
傅時梁
黃允文
Original Assignee
大陸商中微半導體設備（上海）股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商中微半導體設備（上海）股份有限公司 filed Critical 大陸商中微半導體設備（上海）股份有限公司
Publication of TW202209405A publication Critical patent/TW202209405A/en
Application granted granted Critical
Publication of TWI799895B publication Critical patent/TWI799895B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW110122231A 2020-08-20 2021-06-17 Plasma treatment device TWI799895B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010844507.0 2020-08-20
CN202010844507.0A CN114078680B (en) 2020-08-20 2020-08-20 Plasma processing apparatus

Publications (2)

Publication Number Publication Date
TW202209405A TW202209405A (en) 2022-03-01
TWI799895B true TWI799895B (en) 2023-04-21

Family

ID=80282084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110122231A TWI799895B (en) 2020-08-20 2021-06-17 Plasma treatment device

Country Status (2)

Country Link
CN (1) CN114078680B (en)
TW (1) TWI799895B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1425187A (en) * 1999-11-18 2003-06-18 东京电子有限公司 Method and apparatus for ionized physical vapor deposition
US20040262540A1 (en) * 2002-01-22 2004-12-30 Tokyo Electron Limited Surface treating device and surface treating method
TW200807553A (en) * 2006-06-20 2008-02-01 Sosul Co Ltd Plasma etching chamber
TW200939377A (en) * 2007-07-27 2009-09-16 Mattson Tech Inc Advanced multi-workpiece processing chamber
TW201108349A (en) * 2009-03-24 2011-03-01 Lam Res Corp Method and apparatus for reduction of voltage potential spike during dechucking
CN111466009A (en) * 2017-12-15 2020-07-28 朗姆研究公司 Toroidal structures and systems for use in plasma chambers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3131865B2 (en) * 1994-09-05 2001-02-05 東京エレクトロン株式会社 Plasma film forming equipment
JP3931578B2 (en) * 2001-03-30 2007-06-20 信越半導体株式会社 Vapor growth equipment
KR20100004857A (en) * 2008-07-03 2010-01-13 주성엔지니어링(주) Dry etching apparatus
JP5398358B2 (en) * 2009-05-29 2014-01-29 三菱重工業株式会社 Substrate support structure and plasma processing apparatus
US9719169B2 (en) * 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US9287147B2 (en) * 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
JP6069654B2 (en) * 2013-03-29 2017-02-01 Ｓｐｐテクノロジーズ株式会社 Plasma processing stage for substrate to be processed and plasma processing apparatus using the same
US10950477B2 (en) * 2015-08-07 2021-03-16 Applied Materials, Inc. Ceramic heater and esc with enhanced wafer edge performance
CN107154332B (en) * 2016-03-03 2019-07-19 中微半导体设备(上海)股份有限公司 A kind of plasma processing apparatus and method
CN110610841B (en) * 2018-06-14 2022-01-28 中微半导体设备(上海)股份有限公司 Plasma confinement assembly and processing device thereof
KR102487930B1 (en) * 2018-07-23 2023-01-12 삼성전자주식회사 Substrate support apparatus and plasma processing apparatus having the same
KR102134391B1 (en) * 2018-10-18 2020-07-15 세메스 주식회사 Substrate processing apparatus
CN111326389B (en) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 Capacitively coupled plasma etching equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1425187A (en) * 1999-11-18 2003-06-18 东京电子有限公司 Method and apparatus for ionized physical vapor deposition
US20040262540A1 (en) * 2002-01-22 2004-12-30 Tokyo Electron Limited Surface treating device and surface treating method
TW200807553A (en) * 2006-06-20 2008-02-01 Sosul Co Ltd Plasma etching chamber
TW200939377A (en) * 2007-07-27 2009-09-16 Mattson Tech Inc Advanced multi-workpiece processing chamber
TW201108349A (en) * 2009-03-24 2011-03-01 Lam Res Corp Method and apparatus for reduction of voltage potential spike during dechucking
CN111466009A (en) * 2017-12-15 2020-07-28 朗姆研究公司 Toroidal structures and systems for use in plasma chambers

Also Published As

Publication number Publication date
CN114078680B (en) 2023-09-29
TW202209405A (en) 2022-03-01
CN114078680A (en) 2022-02-22

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