TWI799892B - 封裝結構及有關封裝結構的測量方法 - Google Patents
封裝結構及有關封裝結構的測量方法 Download PDFInfo
- Publication number
- TWI799892B TWI799892B TW110121258A TW110121258A TWI799892B TW I799892 B TWI799892 B TW I799892B TW 110121258 A TW110121258 A TW 110121258A TW 110121258 A TW110121258 A TW 110121258A TW I799892 B TWI799892 B TW I799892B
- Authority
- TW
- Taiwan
- Prior art keywords
- package structure
- measurement method
- package
- measurement
- Prior art date
Links
- 238000000691 measurement method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/16—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring distance of clearance between spaced objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
- G01B7/31—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063109165P | 2020-11-03 | 2020-11-03 | |
US63/109,165 | 2020-11-03 | ||
US17/200,868 | 2021-03-14 | ||
US17/200,868 US11965731B2 (en) | 2020-11-03 | 2021-03-14 | Package structure and measurement method for the package structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202220074A TW202220074A (zh) | 2022-05-16 |
TWI799892B true TWI799892B (zh) | 2023-04-21 |
Family
ID=80394145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110121258A TWI799892B (zh) | 2020-11-03 | 2021-06-10 | 封裝結構及有關封裝結構的測量方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11965731B2 (zh) |
CN (1) | CN114141642A (zh) |
TW (1) | TWI799892B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1565078A (zh) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | 压电部件及制造方法 |
CN102844858A (zh) * | 2010-04-20 | 2012-12-26 | 旭硝子株式会社 | 用于形成半导体器件贯通电极的玻璃基板 |
CN111430334A (zh) * | 2020-04-28 | 2020-07-17 | 罕王微电子(辽宁)有限公司 | 一种mems 5g通讯射频天线及制作工艺 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2325018A1 (fr) * | 1975-06-23 | 1977-04-15 | Ibm | Dispositif de mesure d'intervalle pour definir la distance entre deux faces ou plus |
US4165178A (en) * | 1978-06-29 | 1979-08-21 | International Business Machines Corporation | Gap measurement tool |
US6531335B1 (en) * | 2000-04-28 | 2003-03-11 | Micron Technology, Inc. | Interposers including upwardly protruding dams, semiconductor device assemblies including the interposers, and methods |
JP2003124279A (ja) * | 2001-10-16 | 2003-04-25 | Mitsubishi Electric Corp | 半導体装置のトレンチ深さ測定方法 |
KR100945448B1 (ko) * | 2008-05-06 | 2010-03-05 | 삼성전기주식회사 | 웨이퍼 레벨 카메라 모듈의 디포커스 보정방법 |
KR101186464B1 (ko) * | 2011-04-13 | 2012-09-27 | 에스엔유 프리시젼 주식회사 | Tsv 측정용 간섭계 및 이를 이용한 측정방법 |
TWI467125B (zh) * | 2012-09-24 | 2015-01-01 | Ind Tech Res Inst | 量測系統與量測方法 |
TWI600876B (zh) * | 2015-11-23 | 2017-10-01 | 財團法人工業技術研究院 | 量測系統 |
US10157457B2 (en) * | 2016-08-10 | 2018-12-18 | Kla-Tencor Corporation | Optical measurement of opening dimensions in a wafer |
TWI641806B (zh) * | 2017-11-29 | 2018-11-21 | 勝麗國際股份有限公司 | 感測器封裝結構的檢測方法、與檢測設備及其對焦式擷取器 |
US10498948B1 (en) * | 2018-06-05 | 2019-12-03 | Applied Materials, Inc. | Methods and apparatus for absolute and relative depth measurements using camera focus distance |
TWI672764B (zh) * | 2018-11-07 | 2019-09-21 | 國立成功大學 | 晶片封裝裝置及其對位壓合方法 |
US20220148992A1 (en) * | 2020-11-12 | 2022-05-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Package structure and method of forming the package structure |
-
2021
- 2021-03-14 US US17/200,868 patent/US11965731B2/en active Active
- 2021-06-10 TW TW110121258A patent/TWI799892B/zh active
- 2021-08-06 CN CN202110902270.1A patent/CN114141642A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1565078A (zh) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | 压电部件及制造方法 |
CN102844858A (zh) * | 2010-04-20 | 2012-12-26 | 旭硝子株式会社 | 用于形成半导体器件贯通电极的玻璃基板 |
CN111430334A (zh) * | 2020-04-28 | 2020-07-17 | 罕王微电子(辽宁)有限公司 | 一种mems 5g通讯射频天线及制作工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN114141642A (zh) | 2022-03-04 |
US11965731B2 (en) | 2024-04-23 |
TW202220074A (zh) | 2022-05-16 |
US20220139789A1 (en) | 2022-05-05 |
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TWI799892B (zh) | 封裝結構及有關封裝結構的測量方法 |