TWI799892B - 封裝結構及有關封裝結構的測量方法 - Google Patents

封裝結構及有關封裝結構的測量方法 Download PDF

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Publication number
TWI799892B
TWI799892B TW110121258A TW110121258A TWI799892B TW I799892 B TWI799892 B TW I799892B TW 110121258 A TW110121258 A TW 110121258A TW 110121258 A TW110121258 A TW 110121258A TW I799892 B TWI799892 B TW I799892B
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TW
Taiwan
Prior art keywords
package structure
measurement method
package
measurement
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Application number
TW110121258A
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English (en)
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TW202220074A (zh
Inventor
張貴松
Original Assignee
台灣積體電路製造股份有限公司
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Publication of TW202220074A publication Critical patent/TW202220074A/zh
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Publication of TWI799892B publication Critical patent/TWI799892B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/16Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring distance of clearance between spaced objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4817Conductive parts for containers, e.g. caps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/30Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B7/31Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
TW110121258A 2020-11-03 2021-06-10 封裝結構及有關封裝結構的測量方法 TWI799892B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063109165P 2020-11-03 2020-11-03
US63/109,165 2020-11-03
US17/200,868 2021-03-14
US17/200,868 US11965731B2 (en) 2020-11-03 2021-03-14 Package structure and measurement method for the package structure

Publications (2)

Publication Number Publication Date
TW202220074A TW202220074A (zh) 2022-05-16
TWI799892B true TWI799892B (zh) 2023-04-21

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TW110121258A TWI799892B (zh) 2020-11-03 2021-06-10 封裝結構及有關封裝結構的測量方法

Country Status (3)

Country Link
US (1) US11965731B2 (zh)
CN (1) CN114141642A (zh)
TW (1) TWI799892B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
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CN1565078A (zh) * 2002-07-31 2005-01-12 株式会社村田制作所 压电部件及制造方法
CN102844858A (zh) * 2010-04-20 2012-12-26 旭硝子株式会社 用于形成半导体器件贯通电极的玻璃基板
CN111430334A (zh) * 2020-04-28 2020-07-17 罕王微电子(辽宁)有限公司 一种mems 5g通讯射频天线及制作工艺

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FR2325018A1 (fr) * 1975-06-23 1977-04-15 Ibm Dispositif de mesure d'intervalle pour definir la distance entre deux faces ou plus
US4165178A (en) * 1978-06-29 1979-08-21 International Business Machines Corporation Gap measurement tool
US6531335B1 (en) * 2000-04-28 2003-03-11 Micron Technology, Inc. Interposers including upwardly protruding dams, semiconductor device assemblies including the interposers, and methods
JP2003124279A (ja) * 2001-10-16 2003-04-25 Mitsubishi Electric Corp 半導体装置のトレンチ深さ測定方法
KR100945448B1 (ko) * 2008-05-06 2010-03-05 삼성전기주식회사 웨이퍼 레벨 카메라 모듈의 디포커스 보정방법
KR101186464B1 (ko) * 2011-04-13 2012-09-27 에스엔유 프리시젼 주식회사 Tsv 측정용 간섭계 및 이를 이용한 측정방법
TWI467125B (zh) * 2012-09-24 2015-01-01 Ind Tech Res Inst 量測系統與量測方法
TWI600876B (zh) * 2015-11-23 2017-10-01 財團法人工業技術研究院 量測系統
US10157457B2 (en) * 2016-08-10 2018-12-18 Kla-Tencor Corporation Optical measurement of opening dimensions in a wafer
TWI641806B (zh) * 2017-11-29 2018-11-21 勝麗國際股份有限公司 感測器封裝結構的檢測方法、與檢測設備及其對焦式擷取器
US10498948B1 (en) * 2018-06-05 2019-12-03 Applied Materials, Inc. Methods and apparatus for absolute and relative depth measurements using camera focus distance
TWI672764B (zh) * 2018-11-07 2019-09-21 國立成功大學 晶片封裝裝置及其對位壓合方法
US20220148992A1 (en) * 2020-11-12 2022-05-12 Taiwan Semiconductor Manufacturing Company Ltd. Package structure and method of forming the package structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1565078A (zh) * 2002-07-31 2005-01-12 株式会社村田制作所 压电部件及制造方法
CN102844858A (zh) * 2010-04-20 2012-12-26 旭硝子株式会社 用于形成半导体器件贯通电极的玻璃基板
CN111430334A (zh) * 2020-04-28 2020-07-17 罕王微电子(辽宁)有限公司 一种mems 5g通讯射频天线及制作工艺

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Publication number Publication date
CN114141642A (zh) 2022-03-04
US11965731B2 (en) 2024-04-23
TW202220074A (zh) 2022-05-16
US20220139789A1 (en) 2022-05-05

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