TWI793693B - Ultrasonic inspection device and ultrasonic inspection method - Google Patents
Ultrasonic inspection device and ultrasonic inspection method Download PDFInfo
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Abstract
本揭示提供一種缺陷部之檢測性能,例如顯示圖像之解析度優異之超音波檢查裝置。為此,超音波檢查裝置Z具備:掃描測量裝置1,其對被檢查體進行超音波束之掃描及測量;及控制裝置2,其控制掃描測量裝置1之驅動;掃描測量裝置1具備放出超音波束之發送探針110、與接收超音波束之偏心配置接收探針120,以發送探針110之發送音軸與偏心配置接收探針120之接收音軸之偏心距離大於零之方式,配置偏心配置接收探針120,控制裝置2具備:相位擷取部231,其擷取偏心配置接收探針120接收到之超音波束之信號之相位資訊;及相位變化量算出部232,其算出擷取出之相位資訊之與掃描位置相關之相位變化量。The present disclosure provides an ultrasonic inspection device having excellent detection performance of a defective portion, for example, a display image with excellent resolution. For this reason, the ultrasonic inspection device Z has: a scanning measurement device 1, which scans and measures the ultrasonic beam on the object to be inspected; and a control device 2, which controls the driving of the scanning measurement device 1; The sending probe 110 of the sound beam, and the eccentrically arranged receiving probe 120 for receiving the ultrasonic beam are arranged in such a way that the eccentric distance between the sending sound axis of the sending probe 110 and the receiving sound axis of the eccentrically arranged receiving probe 120 is greater than zero. The receiving probe 120 is arranged eccentrically, and the control device 2 is provided with: a phase acquisition part 231, which extracts the phase information of the signal of the ultrasonic beam received by the receiving probe 120 arranged eccentrically; The phase variation relative to the scanning position of the retrieved phase information.
Description
本揭示係關於一種超音波檢查裝置及超音波檢查方法。The disclosure relates to an ultrasonic inspection device and an ultrasonic inspection method.
已知有使用超音波束之被檢查體之缺陷部之檢查方法。例如,被檢查體之內部存在空氣等聲阻抗較小之缺陷部(空腔等)之情形時,由於在被檢查體之內部產生聲阻抗之間隙,故超音波束之透過量變小。因此,可藉由測量超音波束之透過量,檢測被檢查體內部之缺陷部。A method of inspecting a defect portion of an object to be inspected using ultrasonic beams is known. For example, when there is a defect (cavity, etc.) with low acoustic impedance such as air inside the object to be inspected, a gap of acoustic impedance is generated inside the object to be inspected, so the amount of transmission of the ultrasonic beam becomes small. Therefore, it is possible to detect defects inside the object to be inspected by measuring the transmission amount of the ultrasonic beam.
關於超音波檢查裝置,已知有專利文獻1記載之技術。專利文獻1記載之超音波檢查裝置中,將包含連續之特定個數之負矩形波之矩形波突發信號施加於介隔空氣與被檢體對向配設之發送超音波探頭。由介隔空氣與被検體對向配設之接收超音波探頭,將於被検體中傳播之超音波轉換為透過波信號。基於該透過波信號之信號位凖判定被検體有無缺陷。又,發送超音波探頭及接收超音波探頭將安裝於振子及該振子之超音波收發側之前面板之聲阻抗設定為與抵接於被検體而使用之接觸型超音波探頭相比較低。
[先前技術文獻]
[專利文獻]The technique described in
[專利文獻1]日本專利特開2008-128965號公報(尤其摘要)[Patent Document 1] Japanese Patent Application Laid-Open No. 2008-128965 (especially abstract)
[發明所欲解決之問題][Problem to be solved by the invention]
專利文獻1記載之超音波檢查裝置中,觀測被檢查體中之微小缺陷部時,有觀測到之缺陷部圖像之解析度降低之問題。即,有與缺陷部對應之圖像輪廓模糊之問題。其原因在於,超音波束之一部分被缺陷部遮斷之情形時,接收信號亦發生變化。該問題尤其於欲檢測之缺陷部之尺寸與超音波束之大小(射束徑)相同程度,或大小更小之情形時尤為顯著。
本揭示欲解決之問題在於提供一種缺陷部之檢測性能,例如顯示圖像之解析度優異之超音波檢查裝置及超音波檢查方法。
[解決問題之技術手段]In the ultrasonic inspection device described in
本揭示之超音波檢查裝置係藉由經由流體對被檢查體入射超音波束而進行上述被檢查體之檢查者,其具備:掃描測量裝置,其對上述被檢查體進行上述超音波束之掃描及測量;及控制裝置,其控制上述掃描測量裝置之驅動;上述掃描測量裝置具備放出上述超音波束之發送探針與偏心配置接收探針,以上述發送探針之發送音軸與上述偏心配置接收探針之接收音軸之偏心距離大於零之方式,配置上述偏心配置接收探針。 上述控制裝置與超音波檢查裝置相關,該超音波檢查裝置具備:相位擷取部,其擷取上述偏心配置接收探針接收到之上述超音波束之信號之相位資訊;及相位變化量算出部,其算出擷取出之上述相位資訊之每個掃描位置之變化量。其他解決方式於用以實施發明之形態中稍後敘述。 [發明之效果]The ultrasonic inspection device of the present disclosure performs the inspection of the object to be inspected by incident ultrasonic beams on the object through a fluid, and includes: a scanning measurement device that scans the object to be inspected with the ultrasonic beam and measurement; and a control device, which controls the driving of the above-mentioned scanning measurement device; the above-mentioned scanning measurement device has a sending probe that emits the above-mentioned ultrasonic beam and an eccentrically arranged receiving probe, and the sending sound axis of the above-mentioned sending probe and the above-mentioned eccentrically arranged In the way that the eccentric distance of the receiving sound axis of the receiving probe is greater than zero, the above-mentioned eccentric configuration receiving probe is arranged. The above-mentioned control device is related to an ultrasonic inspection device, and the ultrasonic inspection device includes: a phase acquisition unit that acquires phase information of a signal of the above-mentioned ultrasonic beam received by the above-mentioned eccentrically arranged receiving probe; and a phase change calculation unit , which calculates the variation of each scanning position of the extracted phase information. Other solutions will be described later in the forms for implementing the invention. [Effect of Invention]
根據本揭示,可提供一種缺陷部之檢測性能,例如顯示圖像之解析度優異之超音波檢查裝置及超音波檢查方法。According to the present disclosure, it is possible to provide an ultrasonic inspection device and an ultrasonic inspection method that are excellent in the detection performance of defective parts, for example, the resolution of displayed images.
以下,一面參照圖式,一面說明用以實施本揭示之形態(稱為實施形態)。但,本揭示不限於以下之實施形態,例如可組合不同之實施形態彼此,或於不明顯損害本揭示之效果之範圍內任意變化。又,對相同構件標註相同符號,省略重複之說明。再者,對具有相同功能者標註相同名稱。圖示之內容僅為模式性者,為方便圖示起見,有時於不明顯損害本揭示之效果之範圍內變更實際之構成。Hereinafter, modes for implementing the present disclosure (referred to as embodiments) will be described with reference to the drawings. However, the present disclosure is not limited to the following embodiments. For example, different embodiments may be combined or arbitrarily changed within a range that does not significantly impair the effects of the present disclosure. In addition, the same code|symbol is attached|subjected to the same member, and repeated description is abbreviate|omitted. In addition, the same name is attached|subjected to what has the same function. The contents of the illustrations are only schematic. For the convenience of illustrations, the actual configuration may be changed within the scope of not obviously impairing the effect of this disclosure.
(第1實施形態)
圖1係顯示第1實施形態之超音波檢查裝置Z之構成之圖。圖1中,掃描測量裝置1由剖視模式圖顯示。圖1中,顯示包含作為紙面左右方向之x軸、作為紙面正交方向之y軸、作為紙面上下方向之z軸之正交3軸座標系統。(first embodiment)
Fig. 1 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a first embodiment. In FIG. 1 , a
超音波檢查裝置Z係藉由經由流體F對被檢查體E入射超音波束U(圖3)而進行被檢查體E之檢查者。流體F例如為水等液體W(圖17)、空氣等氣體G,被檢查體E存在於流體F中。第1實施形態中,使用空氣(氣體G之一例)作為流體F。因此,掃描測量裝置1之殼體101之內部成為充滿空氣之空腔。如圖1所示,超音波檢查裝置Z具備掃描測量裝置1、控制裝置2及顯示裝置3。顯示裝置3連接於控制裝置2。The ultrasonic inspection apparatus Z is a person who inspects the object E by injecting the ultrasonic beam U ( FIG. 3 ) on the object E through the fluid F. The fluid F is, for example, a liquid W such as water ( FIG. 17 ), or a gas G such as air, and the subject E exists in the fluid F. In the first embodiment, as the fluid F, air (an example of the gas G) is used. Therefore, the inside of the
掃描測量裝置1係對被檢查體E進行超音波束U之掃描及測量者,具備固定於殼體101之試料台102,於試料台102載置被檢查體E。被檢查體E以任意材料構成。被檢查體E例如為固體材料,更具體而言,例如為金屬、玻璃、樹脂材料或CFRP(碳纖維強化塑膠、Carbon-Fiber Reinforced Plastics)等複合材料等。又,圖1之例中,被檢查體E於內部具有缺陷部D。缺陷部D為空腔等。缺陷部D之例為空腔、與原本應有之材料不同之異物材等。被檢查體E中,將缺陷部D以外之部分稱為健全部N。The
由於缺陷部D與健全部N之構成材料不同,故兩者間聲阻抗不同,超音波束U之傳播特性變化。超音波檢查裝置Z觀測該變化,檢測缺陷部D。Since the constituent materials of the defective part D and the healthy part N are different, the acoustic impedance between them is different, and the propagation characteristic of the ultrasonic beam U changes. The ultrasonic inspection apparatus Z observes this change, and detects the defective part D.
掃描測量裝置1具有放出超音波束U之發送探針110、與偏心配置接收探針120。發送探針110經由發送探針掃描部103設置於殼體101,放出超音波束U。偏心配置接收探針120係相對於被檢查體E設置於發送探針110之相反側,接收超音波束U之接收探針121。偏心配置接收探針120於與發送探針110之發送音軸AX1不同之位置具有接收音軸AX2。發送音軸AX1與接收音軸AX2之距離為偏心距離L。偏心配置接收探針120經由接收探針掃描部104設置於殼體101。The
另,本說明書中,將接收超音波束U之接收探針121中,配置於偏心距離L大於零之位置者定義為偏心配置接收探針120,將配置於偏心距離L為零之位置者定義為同軸配置接收探針140(圖2A等)。換言之,接收探針121係包括偏心配置接收探針120與同軸配置接收探針140之用語,係表示無關偏心距離L而接收超音波之探針之名稱。In addition, in this specification, among the receiving probes 121 that receive the ultrasonic beam U, those that are arranged at a position where the eccentric distance L is greater than zero are defined as eccentrically arranged receiving
此處,「發送探針110之相反側」意指由被檢查體E分隔之2個空間中,與發送探針110所在之空間為相反側(z軸方向上之相反側)之空間,x、y座標並非意指同一相反側(即,相對於xy平面面對稱之位置)。如圖1所示,以發送音軸AX1與接收音軸AX2偏移偏心距離L之方式,設置發送探針110及偏心配置接收探針120。另,針對發送音軸AX1、接收音軸AX2、偏心距離L之具體內容,於下文敘述。Here, "the side opposite to the
藉由使接收探針掃描部104移動,偏心配置接收探針120於x軸方向及y軸方向掃描試料台102。發送探針110與偏心配置接收探針120隔著被檢查體E一面於x軸方向或y軸方向上保持偏心距離L一面掃描(粗雙箭頭)。By moving the receiving
另,掃描測量裝置1中,細節皆於下文敘述,但偏心距離L如下設定。即,偏心距離L設定為可接收超音波束U之因被檢查體E之缺陷部D之散射而產生之散射波U1之距離。或者,以向被檢查體E之缺陷部D入射時之偏心配置接收探針120之接收信號強度大於向被檢查體E之健全部N入射時之接收信號強度之方式,設定偏心距離L。或者,偏心距離L設定為向被檢查體E之健全部N照射時未檢測出雜訊以外之接收信號之距離。In addition, in the
掃描測量裝置1具備偏心距離調整部105,其以發送音軸AX1與接收音軸AX2之偏心距離L大於零之方式,調整發送探針110或偏心配置接收探針120之至少一者之位置。在設置於殼體101之接收探針掃描部104,配備偏心距離調整部105(偏心距離調整機構)。且,於偏心距離調整部105,配備偏心配置接收探針120。藉由偏心距離調整部105,可自接收探針掃描部104之位置獨立移動偏心配置接收探針120,可以接收音軸AX2與發送音軸AX1之偏移成為偏心距離L之方式設定。另,偏心距離調整部105亦可設置於發送探針掃描部103側。即,由於只要以接收音軸AX2與發送音軸AX1之偏移成為偏心距離L之方式設定即可,故可將偏心距離調整部105設置於接收探針121側,亦可設置於發送探針110側。The
於掃描測量裝置1連接有控制裝置2。控制裝置2係控制掃描測量裝置1之驅動者,藉由對發送探針掃描部103及接收探針掃描部104發出指示,控制發送探針110及偏心配置接收探針120之移動(掃描)。藉由使發送探針掃描部103及接收探針掃描部104於x軸方向及y軸方向同步移動,發送探針110及偏心配置接收探針120於x軸方向及y軸方向掃描被檢查體E。再者,控制裝置2自發送探針110放出超音波束U,基於自偏心配置接收探針120取得之信號進行波形分析。A
另,本實施形態中,顯示於被檢查體E經由試料台102固定於殼體101之狀態,即對殼體101固定被檢查體E之狀態下,使發送探針110與偏心配置接收探針120進行掃描之例。亦可與此相反,設為對殼體101固定發送探針110與偏心配置接收探針120,使被檢查體E移動,藉此進行掃描的構成。In addition, in this embodiment, the state where the object E is fixed to the
圖示例中,氣體G(流體F之一例。亦可為液體W(圖17))介置於發送探針110與被檢查體E間、及偏心配置接收探針120與被檢查體E間。因此,可使發送探針110及偏心配置接收探針120與被檢查體E非接觸而進行檢查,故可順利且高速地改變xy面內方向之相對位置。即,藉由使流體F介置於發送探針110及偏心配置接收探針120與被檢查體E間,可實現順利之掃描。In the example shown in the figure, gas G (an example of fluid F. It may also be liquid W (Fig. 17)) is interposed between the transmitting
發送探針110為束集型發送探針110。另一方面,偏心配置接收探針120使用束集性較發送探針110鬆緩之探針。本實施形態中,偏心配置接收探針120使用探頭面為平面之非束集型探針。藉由使用此種非束集型偏心配置接收探針120,可於廣大之範圍內收集缺陷部D之資訊。The
本實施形態中,相對於發送探針110,於圖1之x軸方向偏移偏心距離L配置偏心配置接收探針120,但亦可於圖1之y軸方向偏移之狀態下配置偏心配置接收探針120。或者,亦可於x軸方向偏移L1,於y軸方向偏移L2(即,若以發送探針110在xy平面之位置為原點,則為(L1、L2)之位置)地配置偏心配置接收探針120。In this embodiment, relative to the sending
圖2A係說明發送音軸AX1、接收音軸AX2及偏心距離L之圖,且係發送音軸AX1及接收音軸AX2於鉛直方向延伸之情形。圖2B係說明發送音軸AX1、接收音軸AX2及偏心距離L之圖,且係發送音軸AX1及接收音軸AX2傾斜延伸之情形。Fig. 2A is a diagram illustrating the sending sound axis AX1, the receiving sound axis AX2 and the eccentric distance L, and it is the case where the sending sound axis AX1 and the receiving sound axis AX2 extend in the vertical direction. 2B is a diagram illustrating the sending sound axis AX1, the receiving sound axis AX2 and the eccentric distance L, and it is the case where the sending sound axis AX1 and the receiving sound axis AX2 extend obliquely.
音軸定義為超音波束U之中心軸。此處,發送音軸AX1定義為發送探針110放出之超音波束U之傳播路徑之音軸。換言之,發送音軸AX1為發送探針110放出之超音波探針U之傳播路徑之中心軸。發送音軸AX1如圖2B所示,包含被檢查體E之界面之折射。即,如圖2B所示,自發送探針110放出之超音波束U於被檢查體E之界面發生折射之情形時,該超音波束U之傳播路徑之中心(音軸)成為發送音軸AX1。The sound axis is defined as the central axis of the ultrasound beam U. Here, the sending sound axis AX1 is defined as the sound axis of the propagation path of the ultrasonic beam U emitted by the sending
又,接收音軸AX2定義為假設偏心配置接收探針120放出超音波束U時之虛擬超音波束之傳播路徑之音軸。換言之,接收音軸AX2為假設偏心配置接收探針120放出超音波束U時之虛擬超音波束之中心軸。Also, the receiving sound axis AX2 is defined as the sound axis of the propagation path of the virtual ultrasonic beam when the receiving
作為具體例,敘述探頭面為平面狀之非束集型接收探針之情形。該情形時,接收音軸AX2之方向為探頭面之法線方向,通過探頭面之中心點之軸為接收音軸AX2。探頭面為長方形之情形時,其之中心點定義為長方形對角線之交點。As a specific example, the case where the probe surface is a planar non-bundle receiving probe will be described. In this case, the direction of the receiving sound axis AX2 is the normal direction of the probe face, and the axis passing through the center point of the probe face is the receiving sound axis AX2. When the probe surface is rectangular, its center point is defined as the intersection of the diagonals of the rectangle.
接收音軸AX2之方向為探頭面之法線方向之原因在於,自該接收探針121放射之虛擬超音波束U朝探頭面之法線方向出射。接收超音波束U之情形時,亦可感度良好地接收於探頭面之法線方向入射之超音波束U。The reason why the direction of the receiving sound axis AX2 is the normal direction of the probe surface is that the virtual ultrasonic beam U radiated from the receiving probe 121 is emitted toward the normal direction of the probe surface. In the case of receiving the ultrasonic beam U, the ultrasonic beam U incident in the normal direction of the probe surface can also be received with good sensitivity.
偏心距離L定義為發送音軸AX1與接收音軸AX2之偏移距離。因此,如圖2B所示,自發送探針110放出之超音波束U發生折射之情形時,偏心距離L定義為折射之發送音軸AX1與接收音軸AX2之偏移距離。本實施形態之超音波檢查裝置Z以如此定義之偏心距離L成為大於零之距離之方式,藉由偏心距離調整部105(圖1)調整發送探針110及偏心配置接收探針120。藉此,可減少自發送探針110放出,通過缺陷部D(圖1)周圍之超音波束U(圖3),易檢測源自接收探針121之缺陷部D之信號變化。The eccentric distance L is defined as the offset distance between the sending sound axis AX1 and the receiving sound axis AX2. Therefore, as shown in FIG. 2B , when the ultrasonic beam U emitted from the sending
但,本實施形態中,作為較佳例,如上所述,偏心配置接收探針120接收因超音波束U在缺陷部D之散射而產生之散射波U1(圖6B)。由於因存在缺陷部D而產生散射波U1,故藉由檢測散射波U1,可進而提高缺陷部D之檢測精度。以下之例中,為簡化說明,舉設置於可接收散射波U1之位置之偏心配置接收探針120為例,說明本實施形態。However, in this embodiment, as a preferable example, as described above, the receiving
圖2A係顯示將發送探針110配置於被檢查體E之表面之法線方向之情形。圖2A及圖2B中,以實線箭頭表示發送音軸AX1。又,以一點鏈線箭頭表示接收音軸AX2。另,圖2A及圖2B中,虛線所示之接收探針121之位置係偏心距離L為零之位置,發送音軸AX1與接收音軸AX2一致之接收探針121為同軸配置接收探針140。又,實線所示之接收探針121為配置於大於零之偏心距離L之位置之偏心配置接收探針120。以發送音軸AX1相對於水平面(圖1之xy平面)垂直之方式設置發送探針110之情形時,超音波束U之傳播路徑未發生折射。即,發送音軸AX1未發生折射。FIG. 2A shows the situation where the sending
圖2B係顯示將發送探針110自被檢查體E表面之法線方向傾斜角度α配置之情形之圖。圖2B亦與圖2A同樣,以實線箭頭表示發送音軸AX1,以一點鏈線箭頭表示接收音軸AX2。圖2B所示之例之情形時,如上所述,於被檢查體E與流體F之界面,超音波束U之傳播路徑以折射角β發生折射。因此,發送音軸AX1如圖2B之實線箭頭所示般彎折(折射)。該情形時,由於虛線所示之同軸配置接收探針140之位置位於發送音軸AX1上,因而係偏心距離L為零之位置。且,如上所述,於超音波束U發生折射之情形時,偏心配置接收探針120亦以發送音軸AX1與接收音軸AX2之距離成為L之方式配置。另,圖1所示之例中,由於將發送探針110設置於被檢查體E表面之法線方向,故偏心距離L成為如圖2A所示者。FIG. 2B is a diagram showing a situation where the transmitting
偏心距離L設定為缺陷部D之信號強度大於被檢查體E之健全部N之接收信號之位置。關於該點於下文敘述。The eccentric distance L is set as the position where the signal strength of the defective part D is greater than the received signal of the healthy part N of the object E under inspection. This point will be described below.
圖3係顯示發送探針110之構造之剖視剖視圖。圖3中,為了簡化,僅圖示放出之超音波束U之輪廓,但實際上,遍及探頭面114之全域,朝探頭面114之法線矢量方向放出大量超音波束U。FIG. 3 is a cross-sectional view showing the configuration of the sending
發送探針110以聚焦超音波束U之方式構成。藉此,可高精度檢測被檢查體E中之微小缺陷部D。可檢測微小缺陷部D之原因於下文敘述。發送探針110具備發送探針殼體115,於發送探針殼體115之內部,具備背襯112、振子111、及整合層113。於振子111安裝有電極(未圖示),電極藉由引線118連接於連接器116。再者,連接器116藉由引線117連接於電源裝置(未圖示)及控制裝置2。
本說明書中,發送探針110或接收探針121之探頭面114於具備整合層113之情形時定義為整合層113之表面,於不具備整合層113之情形時定義為振子111之表面。即,探頭面114於發送探針110之情形時,為放出超音波束U之面,於接收探針121之情形時,為接收超音波束U之面。The transmitting
圖4A係來自偏心配置接收探針120之接收波形,且係顯示被檢查體E之健全部N之接收波形之圖。圖4B係來自偏心配置接收探針120之接收波形,且係顯示被檢查體E之缺陷部D之接收波形之圖。圖4B顯示在設置於被檢查體E內之寬度2 mm寬之空腔(缺陷部D)之xy座標位置配置發送探針110時之接收信號。另,圖4A及圖4B中,時間表示將突發波施加於發送探針110後之經過時間,使用厚度2 mm之不鏽鋼板作為被檢查體E。對發送探針110施加頻率800 KHz之突發波。更具體而言,將以10波之正弦波構成之突發波以一定週期施加於被檢查體E。FIG. 4A is a received waveform from an eccentrically arranged receiving
圖4A中,未觀測到有明顯之信號,但圖4B中,在將突發波施加於發送探針110後之90微秒後,觀察到明顯之信號。直至觀察到該明顯之信號之90微秒之延遲係因放出超音波束U至散射波U1到達偏心配置接收探針120需花費時間之故。具體而言,空中之音速為340(m/s),相對於此,在構成被檢查體E之不鏽鋼中為6000(m/s)左右,故發生90微秒之延遲。In FIG. 4A, no obvious signal was observed, but in FIG. 4B, after 90 microseconds after the burst wave was applied to the transmitting
圖5係顯示信號強度資料之繪製例之圖。該例中,使發送探針110與偏心配置接收探針120於x軸方向掃描寬度2 mm之缺陷部D,繪製自x軸位置之接收信號(圖4B所示之接收信號)擷取之信號強度資料(每個掃描位置之信號振幅)。本實施形態中,信號強度資料之擷取藉由擷取圖4B所示之接收信號之Peak To Peak(峰對峰)值,即適當時間區域之最大值與最小值之差而進行。作為信號強度資料之擷取方法之另一例,亦可將圖4B所示之接收信號藉由短時間傅立葉轉換等信號處理轉換為頻率成分,擷取適當之頻率成分之強度。再者,作為信號強度資料,亦可以適當之參考波為基準,計算相關函數。如此,對應發送探針110之各掃描位置取得信號強度資料。Fig. 5 is a graph showing an example of plotting signal strength data. In this example, the sending
圖5所示之信號強度資料之繪製中,2 mm寬之空腔(缺陷部D)與圖5之符號D1對應。可知在被檢查體E之健全部N(符號D1以外之部分)為雜訊位凖之信號,相對於此,在內部存在缺陷部D之位置(符號D1),接收信號明顯變大。In the drawing of the signal intensity data shown in FIG. 5 , the cavity (defect part D) with a width of 2 mm corresponds to the symbol D1 in FIG. 5 . It can be seen that the sound part N (the part other than the symbol D1) of the subject E is a signal of noise level, while the received signal is significantly larger at the position where the defective part D exists inside (the part other than the symbol D1).
因此,較佳為偏心距離調整部105以向缺陷部D入射時之偏心配置接收探針120之接收信號強度大於向健全部N入射時之接收信號強度之方式,調整偏心距離L。藉此,可基於接收信號強度檢測缺陷部D。此種偏心距離L例如為配置於可接收散射波U1(圖6B)之位置之偏心配置接收探針120之接收音軸AX2與發送探針110之發送音軸AX1之距離。偏心距離調整部105例如皆未圖示,但由致動器、馬達等構成。Therefore, it is preferable that the eccentric
又,較佳為偏心距離調整部105將偏心距離L調整為向健全部N照射時,未檢測出雜訊以外之接收信號之距離。即,較佳為偏心距離調整部105以在被檢查體E之健全部N中未發出明顯之接收信號之方式,設定偏心距離L。藉此,可增大SN比,將檢測出雜訊以外之接收信號之場所判斷為缺陷部D,可檢測缺陷部D。In addition, it is preferable that the eccentric
偏心距離L例如可使用以與被檢查體E相同之材料構成,且內部具有缺陷部D之標準試料決定。且,可向標準試料之缺陷部D照射超音波束U,基於可接收超音波束U或散射波U1之位置,決定偏心距離L。The eccentric distance L can be determined using, for example, a standard sample made of the same material as the test object E and having a defect D inside. In addition, the ultrasonic beam U can be irradiated to the defect part D of the standard sample, and the eccentricity distance L can be determined based on the position where the ultrasonic beam U or the scattered wave U1 can be received.
使發送探針110僅於x軸方向單維掃描之情形時,於顯示裝置3顯示圖5所示之信號強度資料之圖表。關於發送探針110之掃描方向為x軸方向及y軸方向之2維之情形,藉由繪製信號強度資料,以2維圖像表示缺陷部D之位置,將其顯示於顯示裝置3。When the transmitting
圖6A係本實施形態之超音波束U之傳播路徑,且係顯示對健全部N入射超音波束U時之圖。圖6B係本實施形態之超音波束U之傳播路徑,且係顯示對缺陷部D入射超音波束U時之圖。Fig. 6A is the propagation path of the ultrasonic beam U in this embodiment, and is a diagram showing when the ultrasonic beam U is incident on the healthy part N. FIG. 6B is a propagation path of the ultrasonic beam U in this embodiment, and is a diagram showing when the ultrasonic beam U is incident on the defect portion D. FIG.
如圖6A及圖6B所示,自發送探針110放出之超音波束U入射至被檢查體E。如圖6A所示,對健全部N入射超音波束U之情形時,超音波束U以朝向發送音軸AX1聚焦之方式通過。因此,保持偏心距離L配置之偏心配置接收探針120中,未觀測到接收信號。相對於此,如圖6B所示,對缺陷部D入射超音波束U之情形時,超音波束U在缺陷部D中散射,該散射波U1由偏心設置之偏心配置接收探針120接收。因此,觀測到明顯之接收信號。As shown in FIGS. 6A and 6B , the ultrasonic beam U emitted from the transmitting
如此,於偏心配置接收探針120觀測到因被檢查體E之缺陷部D而散射之散射波U1。因此,缺陷部D之接收信號大於健全部N之接收信號。即,判定為於信號較大之位置存在缺陷部D。因此,較佳為偏心距離調整部105將偏心距離L調整為可接收照射之超音波束U之因被檢查體E之缺陷部D處之散射而產生之散射波U1的距離。藉此,可檢測缺陷部D特有之散射波U1,可提高缺陷部D之檢測精度。In this way, the scattered wave U1 scattered by the defect portion D of the object E is observed at the eccentrically arranged receiving
偏心距離L較佳為無法接收自發送探針110放出之超音波束U,僅可選擇性接收散射波U1之長度。藉此,可增大SN比,提高缺陷部D之檢測性能,尤其檢測感度。此處,「檢測感度較高」係可檢測較先前者小之缺陷部D。即,可檢測之缺陷部D之尺寸下限小於先前者。The eccentric distance L is preferably a length that cannot receive the ultrasonic beam U emitted from the sending
此處,作為比較例,說明先前之超音波檢查方法。Here, a conventional ultrasonic inspection method will be described as a comparative example.
圖7A係顯示先前之超音波檢查方法之超音波束U之傳播路徑之圖,且係顯示向健全部N入射時之圖。圖7B係顯示先前之超音波檢查方法之超音波束U之傳播路徑之圖,且係顯示向缺陷部D入射時之圖。先前之超音波檢查方法中,例如如專利文獻1所記載,以發送音軸AX1與接收音軸AX2一致之方式,配置發送探針110及作為接收探針121之同軸配置接收探針140。FIG. 7A is a diagram showing the propagation path of the ultrasonic beam U in the conventional ultrasonic inspection method, and it is a diagram showing the time when it is incident on the healthy part N. FIG. FIG. 7B is a diagram showing the propagation path of the ultrasonic beam U in the conventional ultrasonic inspection method, and is a diagram showing the time when it is incident on the defect portion D. FIG. In the conventional ultrasonic inspection method, for example, as described in
如圖7A所示,對被檢查體E之健全部N入射超音波束U之情形時,超音波束U通過被檢查體E到達同軸配置接收探針140。因此,接收信號變大。另一方面,如圖7B所示,對缺陷部D入射超音波束U之情形時,由缺陷部D阻擋超音波束U之透過,故接收信號減少。如此,藉由接收信號減少而檢測缺陷部D。這如專利文獻1所示。As shown in FIG. 7A , when the ultrasonic beam U is incident on the healthy part N of the subject E, the ultrasonic beam U passes through the subject E and reaches the coaxially arranged receiving probe 140 . Therefore, the received signal becomes large. On the other hand, as shown in FIG. 7B , when the ultrasonic beam U is incident on the defect D, the defect D blocks the transmission of the ultrasonic beam U, so the received signal decreases. In this way, the defective portion D is detected by decreasing the received signal. This is shown in
此處,如圖7A及圖7B所示,將藉由缺陷部D中阻擋超音波束U之透過使接收信號減少而檢測缺陷部D之方法此處稱為「阻擋法」。另一方面,如本實施形態,將檢測缺陷部D之散射波U1之檢查方法稱為「散射法」。Here, as shown in FIG. 7A and FIG. 7B , the method of detecting the defective part D by blocking the transmission of the ultrasonic beam U in the defective part D to reduce the received signal is referred to herein as the "blocking method". On the other hand, like this embodiment, the inspection method of detecting the scattered wave U1 of the defect part D is called "scattering method".
圖8係顯示先前之超音波檢查方法之信號強度資料之繪製之圖。該圖係信號強度圖表,該信號強度圖表係發明者等人根據圖7A及圖7B所示之阻止法之超音波檢查方法,即,以使發送音軸AX1與接收音軸AX2一致之配置,檢查具有與上述圖5所使用之被檢查體E相同之缺陷部D之被檢查體E而得者。圖8中,符號D1之部分為相當於缺陷部D之部分。FIG. 8 is a graph showing the plotting of signal strength data from previous ultrasound inspection methods. This figure is a signal strength chart, and this signal strength chart is the ultrasonic inspection method of the inventors according to the blocking method shown in Figure 7A and Figure 7B, that is, to make the configuration of the sending sound axis AX1 consistent with the receiving sound axis AX2, What was obtained by inspecting the object E having the same defective portion D as the object E used in FIG. 5 above. In FIG. 8, the part of code|symbol D1 is a part corresponded to the defect part D. As shown in FIG.
圖8中,確認於缺陷部D之中心位置(位置0 mm),信號減少,但該減少量較小。認為這是因為在小於超音波束U之大小之缺陷部D中,透過其周圍之超音波束U較多引起的。因此,使發送音軸AX1與接收音軸AX2一致之阻擋法中,難以檢測源自缺陷部D之信號變化,檢測感度較低。In FIG. 8 , it was confirmed that the signal decreased at the center position of the defect portion D (
相對於此,藉由使發送音軸AX1與接收音軸AX2偏移,可減小偏心配置接收探針120接收之信號強度中,通過小於超音波束U之大小之缺陷部D周圍之超音波束U之信號。藉此,可相對增大起因於缺陷部D之信號強度之減少量,提高缺陷部D之檢測性能,尤其提高檢測感度。其中,亦如上述圖5所示,可知根據本實施形態較佳之散射法之構成,與利用阻擋法之圖8之結果相比,可明確檢測缺陷部D之位置。即,若將比較例之圖8所示之接收結果、與圖5所示之本實施形態之方法之接收結果進行比較,則圖5所示之本實施形態之方法可獲得高SN比。In contrast, by offsetting the transmitting sound axis AX1 and the receiving sound axis AX2, it is possible to reduce the ultrasonic wave passing around the defect part D which is smaller than the size of the ultrasonic beam U in the strength of the signal received by the eccentrically arranged receiving
如此,針對本實施形態之散射法可獲得高SN比之原因,參照圖9A及圖9B進行說明。Thus, the reason why a high SN ratio can be obtained by the scattering method of this embodiment will be described with reference to FIGS. 9A and 9B .
圖9A係顯示被檢查體E內之缺陷部D與超音波束U之相互作用之圖,且係顯示接收直達之超音波束U(以下,稱為「直達波U3」)之情況之圖。關於直達波U3於下文敘述。圖9B係顯示被檢查體E內之缺陷部D與超音波束U之相互作用之圖,且係顯示接收散射波U1之情況之圖。此處,考察缺陷部D之大小小於超音波束U之寬度(以下,稱為射束寬度BW)之情形。此處之射束寬度BW係到達缺陷部D時之超音波束U之寬度。FIG. 9A is a diagram showing the interaction between the defect portion D in the subject E and the ultrasonic beam U, and is a diagram showing the reception of the direct ultrasonic beam U (hereinafter referred to as "direct wave U3"). The direct wave U3 will be described below. FIG. 9B is a diagram showing the interaction between the defect portion D in the subject E and the ultrasonic beam U, and is a diagram showing the state of receiving the scattered wave U1. Here, the case where the size of the defect portion D is smaller than the width of the ultrasonic beam U (hereinafter referred to as beam width BW) will be considered. The beam width BW here is the width of the ultrasonic beam U when it reaches the defect D.
又,由於圖9A及圖9B模式性顯示缺陷部D附近之微小區域之超音波束U之形狀,故平行描繪超音波束U,但實際上為聚焦之超音波束U。再者,圖9A及圖9B之接收探針121之位置係為了易於理解地進行說明,而記入概念性位置者,接收探針121之位置與形狀未準確地予以縮放。即,若考慮缺陷部D與超音波U之形狀之放大縮尺,則接收探針121位於圖式上下方向上較圖9A及圖9B所示之位置更遠之位置。此處,接收探針121於圖9A中為同軸配置接收探針140,於圖9B中意指偏心配置接收探針120。9A and 9B schematically show the shape of the ultrasonic beam U in the micro region near the defect D, so the ultrasonic beam U is drawn in parallel, but it is actually a focused ultrasonic beam U. Furthermore, the position of the receiving probe 121 in FIG. 9A and FIG. 9B is described for ease of understanding, and the position and shape of the receiving probe 121 are not accurately scaled when the conceptual position is recorded. That is, considering the magnification of the shape of the defect portion D and the ultrasonic wave U, the receiving probe 121 is located farther from the position shown in FIGS. 9A and 9B in the vertical direction of the drawing. Here, the receiving probe 121 is the receiving probe 140 arranged coaxially in FIG. 9A , and means the receiving
超音波束U即使聚焦而入射,於缺陷部D附近亦具有某有限之寬度。將其設為缺陷部D之位置處之射束寬度BW。順帶一提,圖9A及圖9B中,顯示缺陷部D之位置處之射束寬度BW寬於缺陷部D之大小之情形。Even if the ultrasonic beam U is focused and incident, it has a limited width in the vicinity of the defect D. Let this be the beam width BW at the position of the defect part D. Incidentally, in FIGS. 9A and 9B , a case where the beam width BW at the position of the defect D is wider than the size of the defect D is shown.
圖9A係顯示使發送音軸AX1與接收音軸AX2一致之阻擋法之情形之圖。缺陷部D小於射束寬度BW之情形時,由於一部分超音波束U被阻擋,故接收信號減少,但不會成零。例如,缺陷部D之剖面積為由射束寬度BW定義之射束剖面積之20%之情形時,由於接收信號僅限於減少大概20%,故難以檢測缺陷部D。即,如圖9A所示之情形時,於缺陷部D存在之部位,僅限於使接收信號減少20%(參照圖8)。FIG. 9A is a diagram showing the situation of the blocking method for making the transmission sound axis AX1 coincide with the reception sound axis AX2. When the defect portion D is smaller than the beam width BW, since a part of the ultrasonic beam U is blocked, the received signal decreases, but it does not become zero. For example, when the cross-sectional area of the defect D is 20% of the beam cross-sectional area defined by the beam width BW, it is difficult to detect the defect D because the received signal is only reduced by about 20%. That is, in the case shown in FIG. 9A , the reduction of the received signal is limited to 20% at the location where the defective portion D exists (see FIG. 8 ).
圖9B係顯示本實施形態之較佳方法之情形,即散射法之情形之圖。散射法中,超音波束U未與缺陷部D抵碰之情形時,超音波束U不入射至偏心配置接收探針120,故接收信號為零。且,如圖9B所示,超音波束U之一部分與缺陷部D抵碰之情形時,因在偏心配置接收探針120觀察到散射波U1,故與阻擋法相比容易檢測缺陷部D。即,若缺陷部D不存在則接收信號為零,若缺陷部D存在,儘管較為微小,則接收信號亦非零。因此,可提高SN比(參照圖5)。Fig. 9B is a diagram showing the situation of the preferred method of this embodiment, that is, the situation of the scattering method. In the scattering method, when the ultrasonic beam U does not collide with the defect D, the ultrasonic beam U does not enter the eccentrically arranged receiving
如此,根據本實施形態之方法(散射法),可以高感度檢測小於射束寬度BW之缺陷部D。此處,「可以高感度檢測」係可檢測較先前者小之缺陷部D。即,可檢測之缺陷部D之尺寸之下限較先前者小。Thus, according to the method (scattering method) of this embodiment, the defect part D smaller than the beam width BW can be detected with high sensitivity. Here, "high-sensitivity detection is possible" means that a defect portion D smaller than the previous one can be detected. That is, the lower limit of the size of the detectable defect portion D is smaller than the previous one.
又,如圖9A所示,阻擋法中,以與健全部N對應之接收信號量為基準,根據與其之減少量判定缺陷部D。因此,較佳為將健全部N之接收信號設為固定值。然而,於流體F中尤其於氣體G中傳播之超音波中,與在液體W(圖17)中傳播之超音波相比,到達接收探針121之強度極小。因此,較佳為接收信號以高放大率(增益)放大。因此,要將增益保持固定,高精度之信號放大電路為佳。另一方面,本實施形態之散射法中,如圖5所示,健全部N中信號大致為零,缺陷部D中觀測到信號,故可減小對信號放大電路之增益穩定性之要求。但,上述圖5中,信號強度值提高偏移值。Also, as shown in FIG. 9A, in the blocking method, the defective portion D is determined based on the amount of received signal corresponding to the healthy portion N based on the amount of decrease therefrom. Therefore, it is preferable to set the received signal of the healthy part N to a fixed value. However, in the ultrasonic waves propagating in the fluid F, especially in the gas G, the intensity reaching the receiving probe 121 is extremely small compared with the ultrasonic waves propagating in the liquid W ( FIG. 17 ). Therefore, it is preferable to amplify the received signal with a high amplification ratio (gain). Therefore, to keep the gain constant, a high-precision signal amplifier circuit is the best. On the other hand, in the scattering method of this embodiment, as shown in FIG. 5, the signal in the healthy portion N is approximately zero, and the signal is observed in the defective portion D, so the requirement for gain stability of the signal amplifier circuit can be reduced. However, in the above-mentioned FIG. 5, the signal strength value is increased by the offset value.
又,本實施形態中,可獲得正圖像。即,散射法中,健全部N未產生信號、或者即使產生信號亦較小,缺陷部D中產生新的信號或信號變大。即,可獲得缺陷部D之正圖像。相對於此,阻擋法中,健全部N中信號較大,缺陷部D中信號減少。即,可獲得缺陷部D之負圖像。Also, in this embodiment, a positive image can be obtained. That is, in the scattering method, no signal is generated in the sound part N, or even if a signal is generated, the signal is small, and a new signal is generated in the defective part D or the signal becomes large. That is, a positive image of the defective portion D can be obtained. On the other hand, in the blocking method, the signal in the sound portion N is large, and the signal in the defective portion D is small. That is, a negative image of the defective portion D can be obtained.
圖10係控制裝置2之功能方塊圖。控制裝置2具備發送系統210、接收系統220、資料處理部201、掃描控制器204、驅動部202及位置測量部203。FIG. 10 is a functional block diagram of the
發送系統210係產生施加於發送探針110之電壓之系統。發送系統210具備波形產生器211及信號放大器212。波形產生器211產生突發波信號。且,將產生之突發波信號由信號放大器212放大。自信號放大器212輸出之電壓被施加於發送探針110。The
接收系統220係檢測自偏心配置接收探針120輸出之接收信號之系統。將自偏心配置接收探針120輸出之信號輸入至信號放大器222並放大。將經放大之信號輸入至波形解析部221。波形解析部221自接收信號產生信號強度資料(圖5)。將產生之信號強度資料發送至資料處理部201。The receiving
接收系統220具備相位擷取部231。對相位擷取部231輸入信號放大器222之輸出信號。相位擷取部231擷取偏心配置接收探針120接收到之超音波束U(散射波U1)之信號之相位資訊。將擷取出之相位資訊發送至資料處理部201之相位變化量算出部232。The receiving
信號之相位係自發送探針110放出超音波束U後,至到達接收信號之特定位置之延遲時間。接收信號之特定位置表示接收信號中容易算出延遲時間之特徵性接收信號之位置。例如,使用10個波之突發波之情形時,為第3個波之位置。The phase of the signal is the delay time from when the sending
再者,作為信號之相位,亦可使用信號之基本週期內之延遲時間。信號之基本週期係基本頻率f0之倒數。例如,使用基本頻率f0=800 kHz之突發波之情形時,基本週期為1.25 μs。相位擷取部231算出接收信號之特定位置,例如零交叉點位於基本週期中之何處。本實施形態中,相位擷取部231算出將延遲時間除以信號之基本週期T0之餘數,藉此算出基本週期內之相位。Furthermore, as the phase of the signal, the delay time within the fundamental period of the signal can also be used. The fundamental period of the signal is the reciprocal of the fundamental frequency f0. For example, when using a burst wave with a basic frequency f0=800 kHz, the basic period is 1.25 μs. The
資料處理部201具備相位變化量算出部232。相位變化量算出部232接收相位資訊作為輸入信號,亦自掃描控制器204接收掃描位置之資訊。使用該等2個資訊,相位變化量算出部232算出由相位擷取部231擷取出之相位資訊之與掃描位置相關的相位變化量(每個掃描位置之相位變化量)。該變化量相當於信號之相位資訊之與掃描位置相關之空間微分量。The
「掃描位置相關之相位變化量」中,除變化量(空間微分量)外,亦包含其平方值、絕對值等表示變化量(空間微分量)之大小變化的信號量(變化量)。若於xy二維平面進行掃描,就該2維掃描位置(x、y)算出變化量,則可獲得容易掌握缺陷部D之輪廓之圖像。"Phase variation related to the scanning position" includes not only the variation (spatial differential), but also signal quantities (variation) indicating the magnitude of the variation (spatial differential), such as its square value and absolute value. By scanning on the xy two-dimensional plane and calculating the amount of change in the two-dimensional scanning position (x, y), an image in which the contour of the defective portion D can be easily grasped can be obtained.
相位變化量算出部232之相位資訊之變化量算出方法包含例如利用CPU(Central Processing Unit:中央處理單元)(中央運算裝置)或微電腦(微控制器)之運算處理、利用FPGA(Field-Programmable Gate Array:場可程式化閘陣列)等之數位信號處理、類比電路之信號處理等。The method of calculating the amount of change in the phase information of the phase change
如此,藉由相位擷取部231及相位變化量算出部232,於x軸方向及y軸方向之各掃描位置上,擷取信號之相位變化、及算出該掃描位置相關之相位變化量。以下說明因掃描位置之不同引起之信號變化。In this way, the phase change of the signal is extracted at each scanning position in the x-axis direction and the y-axis direction by the
圖11係模式性顯示x軸方向之各掃描位置之偏心配置接收探針120之接收信號之變化之圖。縱向之虛線為缺陷部D存在之位置,缺陷部D之寬度為WD。作為參考,於圖表G1顯示設置基於透過法之同軸配置接收探針140時之信號振幅。圖表G2顯示由偏心配置接收探針120接收到之信號之信號振幅,且係波形解析部221之輸出信號。可知圖表G1、G2之任一者中,於缺陷部D附近,信號振幅皆變大,可檢測缺陷部D。FIG. 11 is a diagram schematically showing the change of the received signal of the eccentrically arranged receiving
然而,圖表G1、G2之任一者中,信號之寬度皆寬於缺陷部D之尺寸(寬度)即WD。其原因在於超音波束U之射束尺寸較大。即,於超音波束U之一部分照射至缺陷部D之情形時,亦產生散射波U1,故於缺陷部D附近,散射波U1之信號振幅逐漸變大。因此,導致信號振幅較實際之缺陷部D之尺寸寬。將其顯示於顯示裝置3之情形時,外觀上缺陷部D之尺寸較實際增大,與解析度降低之狀態對應。因此,若僅基於圖表G1、G2,則顯示於顯示裝置3,顯示缺陷部D之輪廓之圖像之解析度可能降低。However, in either graph G1, G2, the width|variety of a signal is wider than WD which is the dimension (width) of the defect part D. The reason for this is that the beam size of the ultrasonic beam U is relatively large. That is, when part of the ultrasonic beam U is irradiated to the defect part D, the scattered wave U1 is also generated, so the signal amplitude of the scattered wave U1 gradually increases near the defect part D. Therefore, the amplitude of the signal is wider than the size of the actual defect D. When it is displayed on the
圖表G3係繪製散射波U1之信號之相位者,且係相位擷取部231(圖10)之輸出信號。可知散射波U1(圖6B)之相位信號於缺陷部D(圖6B)之位置急劇變化。其原因參照圖12A~圖12C於下文敘述。圖表G4係繪製散射波U1之相位信號之與x軸方向之掃描位置相關之相位變化量者,且係相位變化量算出部232(圖10)之輸出信號。圖表G4與就x軸方向之掃描位置,將散射波U1之相位信號進行空間微分之信號對應。再者,圖表G5係繪製將圖表G4之值進行平方者。基於圖表G4、G5,可知能獲得與缺陷部D之輪廓對應之信號,即顯示缺陷部D之輪廓之高解析度圖像。因此,藉由比較圖表G2與圖表G3~G5,可知藉由算出散射波U1之信號之相位之與掃描位置相關之相位變化量,可解析度良好地檢測缺陷部D。Graph G3 plots the phase of the signal of the scattered wave U1, and is the output signal of the phase extractor 231 (FIG. 10). It can be seen that the phase signal of the scattered wave U1 (FIG. 6B) changes rapidly at the position of the defect part D (FIG. 6B). The reason for this will be described below with reference to FIGS. 12A to 12C . Graph G4 plots the phase change of the phase signal of the scattered wave U1 relative to the scanning position in the x-axis direction, and is the output signal of the phase change calculation unit 232 ( FIG. 10 ). Graph G4 corresponds to the signal obtained by spatially differentiating the phase signal of the scattered wave U1 with respect to the scanning position in the x-axis direction. Furthermore, graph G5 is drawn by squaring the value of graph G4. Based on graphs G4 and G5, it can be seen that a signal corresponding to the contour of the defect portion D can be obtained, that is, a high-resolution image showing the contour of the defect portion D can be obtained. Therefore, by comparing graph G2 with graphs G3 to G5, it can be seen that the defect portion D can be detected with high resolution by calculating the phase change amount of the phase of the signal of the scattered wave U1 related to the scanning position.
圖12A係顯示超音波束U未入射至缺陷部D之掃描位置之圖。圖12B係顯示超音波束U入射至缺陷部D,但發送音軸AX1未進入缺陷部D之掃描位置之圖。圖12C係顯示超音波束U入射至缺陷部D,且發送音軸AX1進入缺陷部D之掃描位置之圖。根據本發明者之研討,散射波U1之相位於缺陷部D之位置急劇變化之原因推測為以下原因。FIG. 12A is a diagram showing the scanning position where the ultrasonic beam U is not incident on the defect portion D. FIG. FIG. 12B is a diagram showing the scanning position where the ultrasonic beam U is incident on the defect D, but the transmitting sound axis AX1 does not enter the defect D. FIG. FIG. 12C is a diagram showing the scanning position where the ultrasonic beam U is incident on the defect part D and the sending sound axis AX1 enters the defect part D. FIG. According to the study of the present inventors, the reason why the phase of the scattered wave U1 changes sharply at the position of the defect portion D is presumed to be as follows.
超音波束U未入射至缺陷部D之掃描位置(x1)之掃描時(圖12A),由於未產生散射波U1,故上述圖11之圖表G1、G2所示之信號振幅不變化。但,超音波束U入射至缺陷部D,但發送音軸AX1未進入缺陷部D之掃描位置(x2)之掃描時(圖12B),即使超音波束U之一部分入射至缺陷部D,亦產生散射波U1。因此,如上述圖11之圖表G1、G2所示,信號振幅中可見變化。但,如上述圖11之圖表G3~G5所示,相位不變化。認為這是因為偏心配置接收探針120接收包含散射波U1與來自各個方向之超音波束U之接收成分,其等混合,結果難以確認相位變化引起的。When scanning the scanning position (x1) where the ultrasonic beam U is not incident on the defect D (FIG. 12A), since no scattered wave U1 is generated, the signal amplitudes shown in graphs G1 and G2 of FIG. 11 above do not change. However, when the ultrasonic beam U is incident on the defect part D, but the transmission sound axis AX1 does not enter the scanning position (x2) of the defect part D during scanning (Fig. 12B), even if a part of the ultrasonic beam U is incident on the defect part D, the A scattered wave U1 is generated. Therefore, as shown in the graphs G1, G2 of FIG. 11 above, changes are seen in the signal amplitude. However, as shown in graphs G3 to G5 of FIG. 11 above, the phase does not change. This is considered to be caused by the eccentric arrangement of the receiving
如圖12C所示,超音波束U入射至缺陷部D,且發送音軸AX1進入缺陷部D之掃描位置(x3)時,如上述圖11之圖表G3~G5所示,相位顯著變化。認為這是因為藉由超音波束U之發送音軸AX1入射至缺陷部D,超音波束U以適於缺陷部D之散射之狀態,入射至缺陷部D引起的。藉此,認為這是因為偏心配置接收探針120接收大部分包含散射波U1之接收成分,顯著產生相位變化之引起的。As shown in FIG. 12C , when the ultrasonic beam U is incident on the defect D and the transmission sound axis AX1 enters the scanning position (x3) of the defect D, the phase changes significantly as shown in graphs G3 to G5 of FIG. 11 above. This is considered to be because the ultrasonic beam U enters the defect D in a state suitable for scattering by the defect D when the transmission sound axis AX1 of the ultrasonic beam U enters the defect D. Therefore, it is considered that this is because the off-
如此,超音波束U之發送音軸AX1照射至缺陷部D時,即,偏心配置接收探針120之接收成分之大部分為散射波U1之情形時,可明確捕捉散射波U1之相位變化。因此,藉由基於散射波U1之相位變化,可掌握缺陷部D之位置。In this way, when the transmitting sound axis AX1 of the ultrasonic beam U irradiates the defect D, that is, when most of the received component of the eccentrically arranged receiving
返回至圖10,資料處理部201將被檢查體E之缺陷部D相關之資訊圖像化,或檢測有無存在缺陷部D等將取得之資訊處理成期望之形態。另,由資料處理部201產生之圖像及資訊顯示於顯示部3。Returning to FIG. 10 , the
掃描控制器204驅動控制圖1所示之發送探針掃描部103及接收探針104。發送探針掃描部103及接收探針104之驅動控制通過驅動部202進行。又,掃描控制器204經由位置測量部203,測量發送探針110及偏心配置接收探針120之位置資訊(x軸方向及y軸方向之各掃描位置。xy座標)。The
資料處理部201基於自掃描控制器204接收之發送探針110及偏心配置接收探針120之位置資訊,繪製各個位置之信號強度資料,使之圖像化,並顯示於顯示裝置3。如上所述,缺陷部D中取得之信號強度資料大於健全部N之信號強度資料。因此,若對發送探針110之掃描位置繪製信號強度資料,則可取得顯示何處存在缺陷部D之圖像。顯示裝置3顯示該圖像。Based on the position information of the transmitting
資料處理部201藉由繪製來自相位變化量算出部232之輸出信號、及發送探針110之掃描位置,而產生圖像,將其顯示於顯示裝置3。如後所述,來自相位變化量算出部232之輸出信號賦予與缺陷部D之輪廓圖像對應之圖像。The
信號強度資料產生之圖像與相位變化量算出部232輸出之圖像之2個圖像亦可重疊而作為1張圖像顯示。重疊之圖像係使第2圖像於第1圖像之上重合顯示之圖像。此時,以使2張圖像之掃描位置對應之方式,重合第1圖像與第2圖像。例如,可以附有灰階之黑白圖像顯示信號強度資料之圖像,以黃色等其他顏色重疊顯示相位變化量算出部232輸出之圖像。Two images of the image generated by the signal strength data and the image output by the phase
圖13係顯示控制裝置2之硬體構成之圖。控制裝置2構成為具備RAM(Random Access Memory:隨機存取記憶體)等記憶體251、CPU(Central Processing Unit)252、ROM(Read Only Memory:唯讀記憶體)、HDD(Hard Disk Drive:硬碟驅動器)等記憶裝置253、NIC(Network Interface Card:網路介面卡)等通信裝置254、I/F(Interface:介面)255等。FIG. 13 is a diagram showing the hardware configuration of the
控制裝置2將儲存於記憶裝置253之特定之控制程式加載於記憶體251,藉由CPU252執行。藉此,將圖3之資料處理部201、位置測量部203、掃描控制器204、相位擷取部231、相位變化量算出部232等具體化。The
圖14係顯示第1實施形態之超音波檢查方法之流程圖。第1實施形態之超音波檢查方法可由上述超音波檢查裝置Z執行,適當參照圖1及圖10進行說明。第1實施形態之超音波檢查方法藉由介隔氣體G(圖1)對被檢查體E(圖1)入射超音波束U而進行被檢查體E之檢查。另,針對使用氣體G作為流體F之實施形態說明該超音波檢查方法,但當然該超音波檢查方法對於使用液體W(圖17)作為流體F之實施形態亦有效。Fig. 14 is a flow chart showing the ultrasonic inspection method of the first embodiment. The ultrasonic inspection method of the first embodiment can be executed by the above-mentioned ultrasonic inspection apparatus Z, and will be described with reference to FIGS. 1 and 10 as appropriate. The ultrasonic inspection method of the first embodiment inspects the object E by injecting the ultrasonic beam U on the object E ( FIG. 1 ) through the intervening gas G ( FIG. 1 ). In addition, the ultrasonic inspection method is described for the embodiment using the gas G as the fluid F, but of course this ultrasonic inspection method is also effective for the embodiment using the liquid W ( FIG. 17 ) as the fluid F.
首先,根據控制裝置2(圖10)之指令,進行自發送探針110(圖1)放出超音波束U(圖6B)之放出步驟S101。接著,進行偏心配置接收探針120(圖1)中,接收超音波束U(該例中為散射波U1)之接收步驟S102。First, according to the instruction of the control device 2 (FIG. 10), the emitting step S101 of emitting the ultrasonic beam U (FIG. 6B) from the transmitting probe 110 (FIG. 1) is performed. Next, in the eccentric arrangement of the receiving probe 120 ( FIG. 1 ), the receiving step S102 of receiving the ultrasonic beam U (scattered wave U1 in this example) is performed.
其後,基於偏心配置接收探針120接收到之超音波束U(該例中為散射波U1)之信號(例如波形信號),進行擷取信號之相位資訊之相位擷取步驟S103。相位擷取步驟S103由相位擷取部231(圖10)進行,相位擷取部231例如自上述圖4B所示之接收信號擷取(產生)信號之相位資訊。Afterwards, based on the signal (such as a waveform signal) of the ultrasonic beam U (scattered wave U1 in this example) received by the eccentrically arranged receiving
將相位擷取部231之輸出信號輸入至相位變化量算出部232(圖10),進行算出擷取出之相位資訊之與掃描位置相關之相位變化量的相位變化量算出步驟S104。相位變化量算出步驟S104中,參考自掃描控制器204(圖10)發送之掃描位置資訊(座標位置),算出掃描位置之每單位長度變化之相位變化量。相位變化量算出步驟S104由相位變化量算出部232進行。The output signal of the
將發送探針110及偏心配置接收探針120之掃描位置資訊自位置測量部203(圖10)發送至掃描控制器204(圖10)。資料處理部201(圖10)對自掃描控制器204取得之發送探針110之掃描位置資訊,繪製各個掃描位置之相位變化量。如此,可獲得例如上述圖11所示之圖表G3~G5,將相位變化量圖像化。The scanning position information of the sending
另,上述圖11係掃描位置資訊為單維(1個方向)之情形,關於掃描位置資訊為x、y之2維之情形,藉由繪製相位變化量,而以2維圖像顯示缺陷部D之輪廓資訊,將其顯示於顯示裝置3。In addition, the above-mentioned Fig. 11 shows the case where the scanning position information is one-dimensional (one direction), and for the case where the scanning position information is two-dimensional x, y, by plotting the amount of phase change, the defect part is displayed in a two-dimensional image The contour information of D is displayed on the
相位變化量算出步驟S104之後,進行形狀顯示步驟S105。形狀顯示步驟S105藉由判定相位變化量算出步驟S104中產生之相位資訊之與掃描位置相關之相位變化量是否為預設閾值以上,而將被檢查體E之缺陷部D之形狀顯示於例如顯示裝置3。於顯示裝置3,顯示例如描繪有超出閾值之掃描位置之圖像。如此,可獲得能明確顯示缺陷部D之輪廓之效果,因而更佳。形狀顯示步驟S105由資料處理部201進行。After the phase change amount calculation step S104, the shape display step S105 is performed. In the shape display step S105, the shape of the defect portion D of the object E is displayed on, for example, the
資料處理部201判定掃描是否完成(步驟S111)。掃描完成之情形時(是(Yes)),控制裝置2結束處理。掃描未完成之情形時(否(No)),藉由資料處理部201對驅動部202(圖10)輸出指令,使發送探針110及偏心配置接收探針120移動至下個掃描位置(步驟S112),並將處理返回至放出步驟S101。The
根據以上之超音波檢查裝置Z及超音波檢查方法,可提高缺陷部之檢測性能,例如顯示圖像之解析度,可容易掌握缺陷部D之位置。According to the above ultrasonic inspection apparatus Z and ultrasonic inspection method, the detection performance of the defective part can be improved, for example, the resolution of the displayed image can be easily grasped to the position of the defective part D.
另,流體F可如上所述為氣體G(圖1),亦可如後所述為液體W(圖17)。但,使用空氣等氣體G作為流體F之情形時,根據以下原因,賦予更佳之效果。In addition, the fluid F may be a gas G (FIG. 1) as described above, or a liquid W (FIG. 17) as described later. However, in the case of using gas G such as air as the fluid F, a better effect is imparted for the following reasons.
與液體W中相比,氣體G中超音波之衰減量較大。已知超音波於氣體G中之衰減量與頻率之平方成比例。因此,於氣體G中傳播超音波之上限為1 MHz左右。液體W中之情形時,傳播5 MHz~數10 MHz之超音波,故氣體G中可使用之頻率較液體W中之頻率小。Compared with liquid W, the attenuation of ultrasonic waves in gas G is larger. It is known that the attenuation of ultrasonic waves in gas G is proportional to the square of the frequency. Therefore, the upper limit of ultrasonic waves propagating in gas G is about 1 MHz. In the case of liquid W, ultrasonic waves from 5 MHz to several 10 MHz are propagated, so the usable frequency in gas G is lower than that in liquid W.
一般,當超音波之頻率變低時,超音波束U之聚焦變得困難。因此,於氣體G中傳播之1 MHz之超音波束與液體W中之超音波束U相比,可聚焦之射束徑變大。因此,使用氣體G作為流體F之情形時,有由同軸配線接收探針140(圖2A)檢測之振幅圖像之解析度變低之情況。Generally, as the frequency of ultrasonic waves becomes lower, it becomes difficult to focus the ultrasonic beam U. Therefore, compared with the ultrasonic beam U in the liquid W, the 1 MHz ultrasonic beam propagating in the gas G has a larger beam diameter that can be focused. Therefore, when the gas G is used as the fluid F, the resolution of the amplitude image detected by the coaxial wiring receiving probe 140 ( FIG. 2A ) may decrease.
但,根據本揭示,使用氣體G作為流體F之情形時,亦可獲得由偏心配置接收探針120檢測出之散射波U1之與掃描位置相關之相位變化量(空間微分量)接近缺陷部D之輪廓像之圖像。因此,使用氣體G之情形亦獲得高解析度,使用液體W作為流體F之情形自不必說。如此,於使用氣體G作為流體F之情形時,本揭示之效果更高。However, according to the present disclosure, when gas G is used as fluid F, it is also possible to obtain that the phase change (spatial differential) of the scattered wave U1 detected by the eccentrically arranged receiving
(第2實施形態)
圖15係模式性顯示第2實施形態之超音波檢查裝置Z之構成之圖。第2實施形態中,掃描測量裝置1除偏心配置接收探針120外,亦具備同軸配置接收探針140。此處,同軸配置接收探針140係配置於偏心距離L為零之位置之接收探針121。即,同軸配置接收探針140之接收音軸AX2與發送探針110之發送音軸AX1相同。(second embodiment)
Fig. 15 is a diagram schematically showing the configuration of an ultrasonic inspection device Z according to the second embodiment. In the second embodiment, the
圖16係顯示第2實施形態之控制裝置2之構成之圖。將偏心配置接收探針120之輸出信號輸入至接收系統220a,由其中之相位擷取部231擷取相位資訊。將相位資訊輸入至資料處理部201,由其中之相位變化量算出部232算出信號之相位之與掃描位置相關之相位變化量。該相位變化量如上所述,與缺陷部D之輪廓對應。相位變化量算出部232中,產生輪廓圖像資料。Fig. 16 is a diagram showing the configuration of the
將同軸配置接收探針140之輸出信號輸入至接收系統220b,由信號放大器223放大後,由波形解析部221擷取信號之振幅資訊。由於同軸配置接收探針140之接收音軸AX2以與發送探針110之發送音軸AX1一致之方式設置,故缺陷部D中超音波束U之透過量被遮斷,因而同軸配置接收探針140之接收信號之振幅於缺陷部D中減少。這是先前技術即「阻擋模式」之缺陷檢測方法。將連接有同軸配置接收探針140之接收系統220b之波形解析部221之輸出信號輸入至資料處理部201,由其中之振幅圖像產生部224產生振幅圖像資料。The output signal of the coaxial receiving probe 140 is input to the receiving system 220 b, and after being amplified by the
根據以上順序,自偏心配置接收探針120之信號產生輪廓圖像資料,自同軸配置接收探針140之信號產生振幅圖像資料。將該等2個圖像資料輸入至資料處理部201之圖像合成部225。圖像合成部225合成(重疊)振幅圖像資料(第1圖像)、與輪廓圖像資料(第2圖像)。振幅圖像資料如上所述,係基於由同軸配置接收探針140接收到之直達波U3(圖9A)之振幅由振幅圖像產生部224產生之顯示被檢查體E內部之缺陷部D之位置者。輪廓圖像資料係基於與掃描位置相關之相位變化量由相位變化量算出部232產生之顯示被檢查體E內部之缺陷部D之輪廓者。將合成之圖像輸入至顯示裝置3並顯示。According to the above sequence, the signals from the receiving
觀測小於超音波束U之聚焦尺寸之缺陷部D之情形時,振幅圖像資料成為輪廓模糊之圖像,但輪廓圖像資料賦予更接近缺陷部D之實際尺寸之清晰之形狀。因此,根據第2實施形態,具有可以更高解析度將缺陷部D圖像化之效果。When a defect D smaller than the focal size of the ultrasonic beam U is observed, the amplitude image data becomes an image with a blurred outline, but the contour image data gives a clear shape closer to the actual size of the defect D. Therefore, according to the second embodiment, there is an effect that the defect portion D can be imaged with higher resolution.
另,第2實施形態中,合成自由偏心配置接收探針120接收到之信號獲得之來自相位變化量算出部232之資訊(輪廓圖像資料)、與自由同軸配置接收探針140接收到之信號獲得之來自振幅圖像產生部224之資訊(振幅圖像資料),於顯示裝置3進行重疊顯示。但,本揭示中,該等2個資訊,即相位變化量及振幅之各資訊之活用方法並非限定於合成2個圖像者。In addition, in the second embodiment, the information (contour image data) from the phase change
以下敘述活用該等2個資訊之方法之其他實施形態。以下之實施形態中,藉由適當組合自由偏心配置接收探針120接收到之信號獲得之相位變化量、與自由同軸配置接收探針140接收到之信號獲得之振幅,可產生、顯示高解析度之缺陷部D之圖像。Another embodiment of the method of utilizing these two pieces of information will be described below. In the following embodiments, a high-resolution display can be generated and displayed by appropriately combining the phase change obtained by the signal received by the freely eccentrically arranged receiving
作為該等2個信號之組合方法之第1例,在相位變化量算出部232之輸出信號超出預定之閾值之掃描位置,來自同軸配置接收探針140之波形解析部221之輸出信號,即振幅信號之變化量超出預定之閾值之情形時,可判定於該掃描位置存在缺陷部D。如此判定之缺陷部D之資訊與掃描位置資訊一起作為缺陷部D之圖像顯示於顯示裝置3。藉此,算出相位變化之空間變化量即相位變化量時,即使因不經意之雜訊混入等而發生信號變化之情形時,亦可抑制發生缺陷部D之誤檢測。As a first example of the method of combining these two signals, at the scanning position where the output signal of the phase
第2例中,可將相位變化量算出部232之輸出信號作為缺陷部D之輪廓資訊,使用同軸配置接收探針140之接收信號之振幅值,判定由該輪廓線劃分之圖像中哪個區域與缺陷D之位置對應。基於該判定,將缺陷圖像顯示於顯示裝置3。藉此,可解析度良好地顯示缺陷部D。In the second example, the output signal of the phase
(第3實施形態)
圖17係顯示第3實施形態之超音波檢查裝置Z之構成之圖。第3實施形態中,流體F為液體W,圖示例中為水。超音波檢查裝置Z藉由經由流體F即液體W對被檢查體E入射超音波束U而進行被檢查體E之檢查。被檢查體E配置於液體W之液面L0之下,浸泡於液體W中。超音波檢查裝置Z具備掃描測量裝置1、控制裝置2及顯示裝置3。顯示裝置3連接於控制裝置2。(third embodiment)
Fig. 17 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a third embodiment. In the third embodiment, the fluid F is the liquid W, which is water in the illustrated example. The ultrasonic inspection apparatus Z inspects the object E by injecting the ultrasonic beam U on the object E through the fluid F, that is, the liquid W. The test object E is placed below the liquid level L0 of the liquid W and immersed in the liquid W. The ultrasonic inspection device Z includes a
掃描測量裝置1係對被檢查體E進行超音波束U之掃描及測量者,具備固定於殼體101之試料台102,於試料台102載置被檢查體E。被檢查體E以任意材料構成。被檢查體E例如為固體材料,更具體而言,例如為金屬、玻璃、樹脂材料等。又,被檢查體E於內部具有缺陷部D。缺陷部D為空腔等。缺陷部D之例為空腔、或與原本應有之材料不同之異物材等。將被檢查體E中,缺陷部D以外之部分稱為健全部N。The
由於缺陷部D與健全部N之構成材料不同,故兩者間聲阻抗不同,超音波束之傳播特性發生變化。超音波檢查裝置Z中,觀測該變化,檢測缺陷部D。Since the constituent materials of the defective part D and the healthy part N are different, the acoustic impedance is different between the two, and the propagation characteristics of the ultrasonic beam change. In the ultrasonic inspection apparatus Z, this change is observed, and the defect part D is detected.
掃描測量裝置1具有放出超音波束U之發送探針110、與偏心配置接收探針120。發送探針110經由發送探針掃描部103設置於殼體101,放出超音波束U。偏心配置接收探針120係相對於被檢查體E設置於發送探針110之相反側,接收超音波束U之接收探針121。偏心配置接收探針120於與發送探針110之發送音軸AX1不同之位置,具有接收音軸AX2。發送音軸AX1與接收音軸AX2之距離為偏心距離L。偏心配置接收探針120經由接收探針掃描部104設置於殼體101。The
另,使用水等液體W作為流體F之情形時,亦將接收超音波之接收探針121(圖18)中,配置於偏心距離L為零以上之位置者定義為偏心配置接收探針120,將配置於偏心距離L為零之位置者定義為同軸配置接收探針140(圖18)。換言之,接收探針121係包括偏心配置接收探針120與同軸配置接收探針140之用語。In addition, when a liquid W such as water is used as the fluid F, among the receiving probes 121 ( FIG. 18 ) for receiving ultrasonic waves, those arranged at positions where the eccentric distance L is equal to or greater than zero are defined as eccentrically arranged receiving
第3實施形態中,對發送探針110,於圖17之x軸方向偏移偏心距離L配置偏心配置接收探針120,但亦可以於圖17之y軸方向偏移之狀態配置偏心配置接收探針120。或者,亦可於x軸方向偏移L1,於y軸方向偏移L2(即,若以發送探針110在xy平面之位置為原點,則為(L1、L2)之位置)地配置偏心配置接收探針120。In the third embodiment, the receiving
第3實施形態中,作為較佳例,偏心配置接收探針120接收因超音波束U在缺陷部D之散射而產生之散射波U1(圖6B)。因存在缺陷部D而產生散射波U1,故藉由檢測散射波U1,可進而提高缺陷部D之檢測精度。以下之例中,為簡化說明起見,舉設置於可接收散射波U1之位置之偏心配置接收探針120為例,說明本實施形態。In the third embodiment, as a preferred example, the receiving
偏心距離L設定為如缺陷部D之信號強度大於被檢查體E之健全部N之接收信號之位置。關於該點,與第1實施形態相同。The eccentric distance L is set as the position where the signal intensity of the defective part D is greater than the received signal of the healthy part N of the object E under inspection. This point is the same as that of the first embodiment.
針對配備於第3實施形態之超音波檢查裝置Z之控制裝置2,一面進而參照上述圖10一面進行說明。第3實施形態中,控制裝置2亦具備發送系統210、接收系統220、資料處理部201、掃描控制器204、驅動部202及位置測量部203。關於控制裝置2之構成及動作,與第1實施形態相同。The
接收系統220具備相位擷取部231。對相位擷取部231輸入信號放大器222之輸出信號。相位擷取部231中,自接收信號產生上述相位資訊。將產生之相位資訊發送至資料處理部201。The receiving
資料處理部201具備相位變化量算出部232。相位變化量算出部232接收相位資訊作為輸入信號,亦自掃描控制器204接收掃描位置資訊。使用該等2個資訊,相位變化量算出部232算出因掃描位置變化引起之相位變化量。The
與第1實施形態同樣,該因掃描位置變化引起之相位變化量與缺陷部D之輪廓資訊對應。因此,藉由將該相位變化量對應掃描位置而圖像化,可獲得高解析度之缺陷部之影像。Similar to the first embodiment, the amount of phase change due to the change in the scanning position corresponds to the contour information of the defect portion D. FIG. Therefore, by imaging the amount of phase change corresponding to the scanning position, a high-resolution image of the defect portion can be obtained.
(第4實施形態)
圖18係顯示第4實施形態之超音波檢查裝置Z之構成之圖。第4實施形態中,掃描測量裝置1除偏心配置接收探針120外,亦具備同軸配置接收探針140。此處,同軸配置接收探針140係配置於偏心距離L為零之位置之接收探針121。即,同軸配置接收探針140之接收音軸AX2與發送探針110之發送音軸AX1相同。(fourth embodiment)
Fig. 18 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a fourth embodiment. In the fourth embodiment, the
又,第4實施形態中,流體F為液體W,液體W例如為水。第4實施形態之超音波檢查裝置Z例如由圖16所示之控制裝置2控制。In addition, in the fourth embodiment, the fluid F is the liquid W, and the liquid W is, for example, water. The ultrasonic inspection device Z of the fourth embodiment is controlled by, for example, the
第4實施形態亦與上述第2實施形態同樣,對振幅圖像資料(第1圖像)合成輪廓圖像資料(第2圖像),上述振幅圖像資料(第1圖像)係基於由同軸配置接收探針140接收到之信號者,上述合成輪廓圖像資料(第2圖像)係基於由偏心配置接收探針120接收到之信號,且基於與掃描位置之變化相關之相位變化量者。合成由圖像合成部225(圖16)進行。藉此,可以高解析度檢測缺陷部D。In the fourth embodiment, similar to the above-mentioned second embodiment, the contour image data (second image) is synthesized from the amplitude image data (first image) based on the For the signal received by the receiving probe 140 in the coaxial arrangement, the above-mentioned synthetic contour image data (second image) is based on the signal received by the receiving
(第5實施形態)
圖19係顯示第5實施形態之超音波檢查裝置Z之構成之圖。第5實施形態中,具備收發探針119,取代第3實施形態之超音波檢查裝置Z(圖17)之發送探針110。收發探針119負責第4實施形態之同軸配置接收探針140(圖18)之功能、與第3實施形態之發送探針110(圖17)之功能。因此,收發探針119放出超音波束U,且接收來自被檢查體E(包含缺陷部D)之反射波。(fifth embodiment)
Fig. 19 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a fifth embodiment. In the fifth embodiment, a transmitting and receiving
圖20係第5實施形態之超音波檢查裝置Z之功能方塊圖。收發探針119藉由被施加自控制裝置2之發送系統210輸出之激發脈衝而放出超音波束U。其後,將收發探針119之連接端立即切換為控制裝置2之接收系統220b。典型而言,使用控制裝置2內之開關235進行切換。第5實施形態中,例如開關235為繼電器元件或半導體類比開關。Fig. 20 is a functional block diagram of an ultrasonic inspection device Z according to the fifth embodiment. The transmitting and receiving
由收發探針119檢測缺陷部D中被反射之超音波束U(反射波)。收發探針119中,將反射波之音波轉換為電性信號,經由開關235輸入至接收系統220b。接收系統220b內之波形解析部221中,擷取反射波信號之振幅信號,振幅圖像產生部224基於由收發探針119接收到之直達波之振幅產生振幅圖像資料(第1圖像)。The ultrasonic beam U (reflected wave) reflected in the defect portion D is detected by the transmitting and receiving
另一方面,將由偏心配置接收探針120檢測出之信號輸入至接收系統220a,於相位擷取部231中擷取信號之相位資訊。藉由相位變化量算出部232算出該相位資訊之與掃描位置相關之相位變化量,而產生輪廓圖像資料(第2圖像)。圖像合成部225合成、重疊振幅圖像資料與輪廓圖像資料,將其輸出至顯示裝置3。如此,顯示裝置3中,重疊顯示合成之2個圖像。On the other hand, the signal detected by the eccentrically arranged receiving
如上所述,藉由基於散射波信號之相位之與掃描位置相關之相位變化量,可解析度更佳地檢測缺陷部D之形狀。因此,可以更高解析度將缺陷部D圖像化。又,由於收發探針119兼備發送探針110(圖17)及同軸配置接收探針140(圖18)之功能,故可簡化掃描測量裝置1之構成。As described above, the shape of the defect portion D can be detected with better resolution by the amount of phase change related to the scanning position based on the phase of the scattered wave signal. Therefore, the defective portion D can be imaged with higher resolution. In addition, since the transmitting and receiving
又,只要將先前之阻擋法之超音波檢查裝置之同軸配置接收探針140之位置偏移偏心距離L,即可實現第5實施形態之超音波檢查裝置Z。即,可利用目前為止使用之超音波檢查裝置,可減輕設置成本。In addition, the ultrasonic inspection apparatus Z of the fifth embodiment can be realized by shifting the position of the coaxially arranged receiving probe 140 of the conventional ultrasonic inspection apparatus of the blocking method by the eccentric distance L. That is, the ultrasonic inspection equipment used so far can be used, and the installation cost can be reduced.
(第6實施形態)
圖21係顯示第6實施形態之超音波檢查裝置Z之發送探針110與偏心配置接收探針120之關係之圖。第6實施形態中,針對發送探針110與偏心配置接收探針120之束集性之關係進行說明。(sixth embodiment)
Fig. 21 is a diagram showing the relationship between the transmitting
第6實施形態中,偏心配置接收探針120之束集性較發送探針110之束集性鬆緩。根據被檢查體E內部之缺陷部D之深度、缺陷部D之形狀、傾率等,散射波U1之傳播路徑略微發生變化。因此,第2實施形態中,以即使散射波U1之路徑發生變化,偏心配置接收探針120亦可檢測散射波U1之方式,將偏心配置接收探針120之束集性鬆緩化。In the sixth embodiment, the bundling property of the receiving
束集性之大小關係由被檢查體E表面之射束入射面積T1、T2之大小關係定義。針對射束入射面積T1、T2進行說明。The size relationship of the beam concentration is defined by the size relationship of the beam incident areas T1 and T2 on the surface of the object E to be inspected. The beam incidence areas T1 and T2 will be described.
圖22係說明發送探針110之射束入射面積T1及偏心配置接收探針120之射束入射面積T2之關係之圖。發送探針110之射束入射面積T1為自發送探針110放出之超音波束U在被檢查體E表面之交叉面積。又,偏心配置接收探針120之射束入射面積T2為假設自偏心配置接收探針120放出超音波束U時之虛擬超音波束U2與被檢查體E表面之交叉面積。FIG. 22 is a graph illustrating the relationship between the beam incident area T1 of the transmitting
另,圖22中,顯示超音波束U之路徑為不存在被檢查體E時之路徑。存在被檢查體E之情形時,由於超音波束U於被檢查體E表面發生折射,故超音波束U於與虛線所示之路徑不同之路徑傳播。此處,如圖22所示,偏心配置接收探針120之被檢查體E之射束入射面積T2大於發送探針110之被檢查體E之射束入射面積T1。藉此,可使偏心配置接收探針120之束集性較發送探針110之束集性鬆緩。In addition, in FIG. 22 , the path of the ultrasonic beam U is shown as the path when the subject E is not present. When the object E exists, the ultrasonic beam U propagates along a path different from the path indicated by the dotted line because the ultrasonic beam U is refracted on the surface of the object E. Here, as shown in FIG. 22 , the beam incident area T2 of the subject E where the receiving
再者,偏心配置接收探針120之焦距R2較發送探針110之焦距R1長。藉此,亦可使偏心配置接收探針120之束集性較發送探針110之束集性鬆緩。此時,自被檢查體E至發送探針110及偏心配置接收探針120之距離例如皆相同,但亦可不同。Furthermore, the focal length R2 of the receiving
如此,第6實施形態中,使偏心配置接收探針120之束集性較發送探針110之束集性鬆緩。即,將偏心配置接收探針120之焦距R2設定為長於發送探針110之焦距R1。其結果,由於偏心配置接收探針120之射束入射面積T2變廣,故可檢查廣範圍之散射波U1。藉此,即使散射波U1之傳播路徑略微變化,亦可由偏心配置接收探針120檢測散射波U1。其結果,可檢測廣範圍之缺陷部D。Thus, in the sixth embodiment, the bundling properties of the receiving
又,偏心配置接收探針120之焦點存在於較發送探針110之焦點更靠發送探針110之側(圖示例中為上方)。如此,藉由使焦點偏移,可容易由偏心配置接收探針120接收散射波U1,可容易檢測散射波U1。In addition, the focal point of the receiving
另,亦可使用第1實施形態中使用之非束集型探針,作為偏心配置接收探針120。由於非束集型探針之焦距R2無限大,故較發送探針110之焦距R1長。即,即使為非束集型偏心配置接收探針120,偏心配置接收探針120之束集性亦較發送探針110之束集性鬆緩。In addition, the non-bundling type probe used in the first embodiment may also be used as the eccentrically arranged receiving
(第7實施形態)
圖23係顯示第7實施形態之偏心配置接收探針120之例之圖。且係自z軸之負側觀察超音波檢查裝置Z之發送探針110及偏心配置接收探針120之俯視圖。即,圖23係自偏心配置接收探針120側觀察之圖。第3實施形態中,偏心配置接收探針120之振子111(圖3)在接收音軸AX2相對於發送音軸AX1之偏心方向之長度b,較沿被檢查體E之表面之方向且與偏心方向正交之方向之長度a長。長度a、b為特性長度,分別對於矩形振子,意指矩形邊之長度,對於橢圓形振子,意指橢圓之長軸或短軸。(seventh embodiment)
Fig. 23 is a diagram showing an example of an eccentric arrangement of the receiving
若如此設定偏心配置接收探針120之縱橫比,則即使缺陷部D之深度等變化、散射波U1之到達位置變化,亦可由偏心配置接收探針120檢測散射波U1。If the aspect ratio of the eccentrically arranged receiving
散射波U1以發送音軸AX1為中心,於放射方向散射。因此,於圖23之位置配置有偏心配置接收探針120之情形時,散射波U1於偏心配置接收探針120之長邊方向(「長度b」之延伸方向)散射。換言之,「長度b」之延伸方向為放射散射波U1之方向。因此,藉由增大「長度b」之值,可檢測各個深度等之由缺陷部D散射之散射波U1。即,即使缺陷部D之深度等變化、散射波U1之到達位置變化,亦可由偏心配置接收探針120檢測散射波U1。The scattered wave U1 is scattered in a radiation direction around the transmission sound axis AX1. Therefore, when the receiving
長度a、b無限制,只要長度b較長度a長,即1<b/a即可,上限之b/a(長度b除以長度a之值)例如為100以下,較佳為50以下。The lengths a and b are not limited, as long as the length b is longer than the length a, that is, 1<b/a.
另,圖23中,圖示長方體(矩形狀)之偏心配置接收探針120,作為偏心配置接收探針120,但設為橢圓形狀、同樣設定長軸比及短軸比,此亦可獲得相同效果。In addition, in FIG. 23 , the eccentric
(第8實施形態)
圖24係顯示第8實施形態之超音波檢查裝置Z之掃描測量裝置1之構成之圖。第8實施形態中,掃描測量裝置1具備調整偏心配置接收探針120之斜率之設置角度調整部106。藉此,可增大接收信號之強度,可增大信號之SN比(Signal to Noise比,信號雜訊比)。設置角度調整部106例如皆未圖示,由致動器、馬達等構成。(eighth embodiment)
Fig. 24 is a diagram showing the configuration of the
此處,將發送音軸AX1與接收音軸AX2所成角度θ定義為接收探針設置角度。圖24之情形時,由於發送探針110設置於鉛直方向,故發送音軸AX1為鉛直方向,因而接收探針設置角度即角度θ為發送音軸AX1(即鉛直方向)與偏心配置接收探針120之探頭面之法線所成之角度。且,藉由設置角度調整部106,使角度θ朝發送音軸AX1存在之側傾斜,將角度θ設定為大於零之值。即,將偏心配置接收探針120傾斜配置。具體而言,偏心配置接收探針120以滿足0°<θ<90°之方式傾斜配置,角度θ例如為10°,但不限於此。Here, the angle θ formed by the transmitting sound axis AX1 and the receiving sound axis AX2 is defined as the setting angle of the receiving probe. In the case of Figure 24, since the sending
又,將偏心配置接收探針120傾斜配置時之偏心距離L如下定義。定義接收音軸AX2與偏心配置接收探針120之探頭面之交點C2。又,定義發送音軸AX1與發送探針110之探頭面之交點C1。將交點C1之位置投影於xy平面之座標位置(x4、y4)、與將交點C2之位置投影於xy平面之座標位置(x5、y5)之距離定義為偏心距離L。Also, the eccentric distance L when the eccentrically arranged receiving
如此傾斜配置偏心配置接收探針120,本發明者實際進行缺陷部D之檢測時,接收信號之信號強度與θ=0之情形相比增加3倍。By disposing the receiving
圖25係說明第8實施形態之效果產生之原因之圖。散射波U1於偏離發送音軸AX1之方向傳播。因此,如圖25所示,散射波U1到達被檢查體E之外側時,以與被檢查體E表面之法線矢量為非零之角度α2入射至被檢查體E與外部之界面。且,自被檢查體E之表面發出之散射波U1之角度具有相對於被檢查體E表面之法線方向非零之出射角即角度β2。使偏心配置接收探針120之探頭面之法線矢量與散射波U1之行進方向一致時,可效率最佳地接收散射波U1。即,藉由傾斜配置偏心配置接收探針120,可增大接收信號強度。Fig. 25 is a diagram illustrating the cause of the effect of the eighth embodiment. The scattered wave U1 propagates in a direction deviated from the transmitting sound axis AX1. Therefore, as shown in FIG. 25 , when the scattered wave U1 reaches the outside of the subject E, it enters the interface between the subject E and the outside at an angle α2 with a non-zero normal vector to the surface of the subject E. Moreover, the angle of the scattered wave U1 emitted from the surface of the object E to be inspected has a non-zero outgoing angle relative to the normal direction of the surface of the object E to be inspected, that is, the angle β2. When the normal vector of the probe surface of the eccentrically arranged receiving
另,自被檢查體E出射之超音波束U之角度β2、與發送音軸AX1及接收音軸AX2所成角度θ一致時,接收效果最高。然而,角度β2與角度θ不完全一致之情形時,亦可獲得接收信號增大之效果,故如圖25所示,角度β2與角度θ亦可不完全一致。In addition, when the angle β2 of the ultrasonic beam U emitted from the subject E coincides with the angle θ formed by the transmitting sound axis AX1 and the receiving sound axis AX2, the receiving effect is the highest. However, when the angle β2 does not completely coincide with the angle θ, the effect of increasing the received signal can also be obtained, so as shown in FIG. 25 , the angle β2 and the angle θ may not completely coincide.
另,掃描測量裝置1(圖24)中,設有設置角度調整部106,藉由設置角度調整部106設置偏心配置接收探針120。可藉由設置角度調整部106,調整偏心配置接收探針120之接收探針設置角度。由於根據被檢查體E之材料、厚度等,散射波U1之路徑略微變化,故偏心配置接收探針120之設置角度之最佳值亦變化。因此,藉由可由設置角度調整部106調整接收探針設置角度,可根據被檢查體E之材料、厚度等,適當調整偏心配置接收探針120之設置角度。In addition, in the scanning measurement device 1 ( FIG. 24 ), an installation
又,第8實施形態中,偏心配置接收探針120以相對於水平面傾斜之狀態配置,但發送探針110亦可以傾斜狀態配置。或者,亦可為發送探針110以相對於水平面傾斜之狀態配置,偏心配置接收探針120之探頭面以相對於水平面(xy平面)平列之方式配置。任一情形時,皆如上述圖2B所示,發送音軸AX1與接收音軸AX2以偏移之狀態配置。
另,為獲得本實施形態記載之傾斜配置效果,於0°<θ<90°之範圍內設定角度θ(傾斜角)。另一方面,本揭示之其他實施形態中,當然亦可θ=0°。In addition, in the eighth embodiment, the eccentric arrangement of the receiving
(第9實施形態)
圖26係顯示第9實施形態之超音波檢查裝置Z之構成之圖。第9實施形態中,偏心配置接收探針120包含複數個單位探針120a。圖示之例中,單位探針120a為3個。單位探針120a分別配置於偏心距離L(與發送音軸AX1之距離)不同之位置。(ninth embodiment)
Fig. 26 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a ninth embodiment. In the ninth embodiment, the eccentrically arranged receiving
根據缺陷部D之深度、形狀、斜率等,散射波U1之路徑略微變化。例如,散射時之散射角(散射波U1相對於發送音軸AX1所成之角度)通常為相同程度。因此,缺陷部D愈深,散射波U1到達愈接近發送音軸AX1之場所,缺陷部D愈淺,散射波U1到達距發送音軸AX1愈遠之場所。因此,藉由使用複數個單位探針120a,使用是由哪個位置之單位探針120a接收之資訊,可獲得缺陷部D相關之資訊(缺陷部D之深度等)。Depending on the depth, shape, slope, etc. of the defect portion D, the path of the scattered wave U1 changes slightly. For example, the scattering angle (the angle formed by the scattered wave U1 with respect to the transmission sound axis AX1 ) at the time of scattering is generally the same. Therefore, the deeper the defect D is, the closer the scattered wave U1 reaches to the transmitting sound axis AX1, and the shallower the defect D is, the farther the scattered wave U1 reaches from the transmitting sound axis AX1. Therefore, by using a plurality of
作為複數個單位探針120a,亦可使用將複數個感音元件122a(圖28及圖29)收納於一個殼體之陣列型探針122(圖28及圖29)。該情形時,圖26之單位探針120a分別與感音元件對應,其等被收納於一個殼體中。感音元件係將超音波轉換為電性信號之元件。作為感音元件,除壓電元件外,亦可使用靜電電容感音元件(CMUT,Capacitive Micro-machined Ultrasonic Transducer)等。As the plurality of
圖27係第9實施形態之超音波檢查裝置Z之功能方塊圖。複數個單位探針120a連接於與各自對應之接收系統220c、220d、220e。各個接收系統220c、220d、220e之構成與圖10所示之接收系統220之構成相同。即,接收系統220c、220d、220e於圖27中皆未圖示,但如圖10所示,具備信號放大器222、波形解析部221、及相位擷取部231。來自各個單位探針120a之信號由信號放大器222放大,輸入至波形解析部221及相位擷取部231。波形解析部221輸出接收信號(散射波U1)之振幅,相位擷取部231輸出接收信號(散射波U1)之相位資訊。將該等來自接收系統220c、220d、220e各者之輸出輸入至缺陷資訊判定部205。Fig. 27 is a functional block diagram of an ultrasonic inspection device Z according to the ninth embodiment. A plurality of
缺陷資訊判定部205配備於控制裝置2,基於複數個單位探針120a中,接收被照射之超音波束U之因被檢查體E之缺陷部D之散射而產生之散射波U1之單位探針120a之接收信號,判定被檢查體E之缺陷部D相關之資訊(缺陷部D之深度等)。具體而言,缺陷資訊判定部205基於來自接收系統220c、220d、220e各者之波形解析部221之振幅資訊,判斷最適於觀測散射波U1之接收系統220。第9實施形態中,缺陷資訊判定部205選擇振幅最大之接收系統220。且,將來自該選擇之接收系統220之相位擷取部231之相位資訊輸出至資料處理部201。The defect
缺陷資訊判定部205基於接收系統220c、220d、220e各者之波形分析結果,判定缺陷部D相關之資訊。所謂基於接收信號,係由哪個單位探針120a檢測哪種程度之接收信號(散射波U1)。藉此,可提高缺陷部D之位置資訊之精度。The defect
將缺陷資訊判定部205之輸出輸入至資料處理部201。資料處理部201具備相位變化量算出部232。相位變化量算出部232搭配來自掃描探針之掃描控制器204之掃描位置資訊,算出掃描位置變化相關之接收信號之相位變化量。如上所述,該掃描位置變化相關之相位變化量賦予與缺陷部D之輪廓資訊對應之圖像。將該資訊圖像化,顯示於顯示裝置3。The output of the defect
另,缺陷資訊判定部205亦可作為資料處理部201之一部分設置。In addition, the defect
(第10實施形態)
圖28係顯示第10實施形態之偏心配置接收探針120之配置之圖。該例中,係自圖1之z軸之負側,即偏心配置接收探針120側觀察發送探針110及偏心配置接收探針120之俯視圖。第10實施形態中,偏心配置接收探針120於xy平面方向2維配置。即,偏心配置接收探針120包含俯視時矩形狀之複數個單位探針120a,複數個單位探針120a以發送音軸AX1為中心放射狀配置。圖示例中,單位探針120a為8個。(tenth embodiment)
Fig. 28 is a diagram showing the arrangement of eccentrically arranged receiving
散射波U1之方向根據缺陷部D之形狀、傾斜方向等略微變化。因此,如圖28般放射狀配置單位探針120a,記錄於哪個方向檢測出散射波U1,藉此可更高精度地獲得缺陷部D之形狀、傾斜方向等資訊。The direction of the scattered wave U1 slightly changes depending on the shape of the defect D, the direction of inclination, and the like. Therefore, by arranging the unit probes 120a radially as shown in FIG. 28 and recording in which direction the scattered wave U1 was detected, information such as the shape and inclination direction of the defect portion D can be obtained with higher precision.
(第11實施形態)
圖29係顯示第11實施形態之偏心配置接收探針120之配置之圖,係傾斜配置單位探針120a之圖。複數個單位探針120a相對於發送音軸AX1對稱配置。因此,於偏心距離L相同之位置,配置至少2個單位探針120a。圖示例中,於包含發送音軸AX1之俯視時,於發送音軸AX1之兩側,對稱配置各3個單位探針120a。且,於3個不同的偏心距離L各者之位置,各配置2個單位探針120a。另,單位探針120a與上述第8實施形態(圖25)同樣傾斜配置。(Eleventh Embodiment)
Fig. 29 is a diagram showing the arrangement of the eccentrically arranged receiving
圖30係顯示第11實施形態之偏心配置接收探針120之配置之圖,係於鉛直方向配置單位探針120a之圖。1組單位探針120a相對於發送音軸AX1對稱配置。因此,於偏心距離L相同之位置,配置至少2個單位探針120a。Fig. 30 is a diagram showing the arrangement of the eccentrically arranged receiving
藉由於偏心距離L相同之位置配置至少2個單位探針120a,可檢測朝複數個方向散射之散射波U1。又,於包含發送音軸AX1之俯視(圖29及圖30)時,於發送音軸AX1之兩側配置至少2個單位探針120a,藉此可接收廣範圍之散射波U1。再者,控制裝置2可於由兩側各個單位探針120a檢測出散射波U1時,判定為實際檢測出缺陷部D,僅其中一者檢測出散射波U1之情形時,判定為錯誤。藉此,可提高缺陷部D之檢測精度。By arranging at least two
(第12實施形態)
圖31係顯示第12實施形態之超音波檢查裝置Z之構成之圖。第12實施形態中,同軸配置接收探針140之焦距R3較偏心配置接收探針120之焦距R2短。藉此,同軸配置接收探針140之束集性較偏心配置接收探針120之束集性高。(12th embodiment)
Fig. 31 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a twelfth embodiment. In the twelfth embodiment, the focal length R3 of the coaxially arranged receiving probes 140 is shorter than the focal length R2 of the eccentrically arranged receiving probes 120 . Thus, the coaxially arranged receiving probe 140 has higher bundling performance than the eccentrically arranged receiving
藉由使同軸配置接收探針140之焦距R3短於偏心配置接收探針120之焦距R2,同軸配置接收探針140可效率良好地接收自發送探針110放出之超音波束U中,接收音軸AX2上之超音波束U。另一方面,由於散射波U1具有複數個傳播路徑,故藉由降低接收其之偏心配置接收探針120之束集性,可充分接收散射波U1。因此,可使用具有與直達波U3及散射波U1各者之特性匹配之束集性之接收探針121,更有效地檢測缺陷。By making the focal length R3 of the coaxially arranged receiving probe 140 shorter than the focal length R2 of the eccentrically arranged receiving
(第13實施形態)
圖32係顯示第13實施形態之超音波檢查裝置Z之構成之圖。第13實施形態中,使用具有偏心配置接收探針120及同軸配置接收探針140兩者之功能之陣列型探針122。陣列型探針122係複數個感音元件122a(亦作為單位探針120a(圖26)發揮功能)單維(圖32)或2維(圖33)配置之接收探針121。(13th Embodiment)
Fig. 32 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a thirteenth embodiment. In the thirteenth embodiment, an array-
陣列型探針122以構成之1個感音元件122a之接收音軸AX2與發送音軸AX1一致之方式配置。配置於該配置之感音元件122a作為同軸配置接收探針140發揮功能。剩餘感音元件122a與上述圖26所示之例同樣,以發送音軸AX1為中心於圖32中,於紙面左右方向連續且對稱配置,其等作為偏心配置接收探針120發揮功能。該例中,感音元件122a單維配置。The
藉由使用陣列型探針122,單維配置感音元件122a,感音元件122a之設置數較少,故可削減陣列型探針122之設置成本,且可由複數個感音元件122a接收散射波U1。又,缺陷部D較小,完全阻止超音波傳播之情形時,具有與發送音軸AX1一致之接收音軸AX2之感音元件122a亦可檢測信號量之減少。藉此,可效率良好地檢測小缺陷部D至大缺陷部D。By using the array-
(第14實施形態)
圖33係顯示第14實施形態之超音波檢查裝置Z之構成之圖。圖33係自圖1之z軸負側,即陣列型探針122之側觀察發送探針110及陣列型探針122之俯視圖。上述圖32中,構成陣列型探針122之感音元件122a僅於一方向單維配置。但,圖33所示之陣列型探針122中,感音元件122a於xy之二個方向2維配置。圖示例中,感音元件122a於xy各方向各配置相同數(各7個),配置成正方形狀。但,感音元件122a不限於正方形狀之配置,亦可配置成例如長方形、圓形、橢圓形等各形狀。(14th Embodiment)
Fig. 33 is a diagram showing the configuration of an ultrasonic inspection apparatus Z according to a fourteenth embodiment. FIG. 33 is a top view of the transmitting
藉由使用陣列型探針122,2維配置感音元件122a,可由較多之感音元件122a接收散射波U1,可抑制散射波U1之漏檢。又,缺陷部D較大,完全阻止超音波傳播之情形時,具有與發送音軸AX1一致之接收音軸AX2之感音元件122a亦可檢測出信號量之減少。藉此,可效率良好地檢測出小缺陷部D至大缺陷部D。By using the
以上之各實施形態中,記載有缺陷部D為空腔之例,但作為缺陷部D,亦可為與被檢查體E之材質不同材質混入之異物。該情形時,由於在不同材料相接之界面存在聲阻抗之差(Gap(差距)),故產生散射波U1,故上述各實施形態之構成較為有效。本實施形態之超音波檢查裝置Z以超音波缺陷影像裝置為前提,但亦可應用於非接觸直列式內部缺陷檢查裝置。In each of the above embodiments, an example is described in which the defect portion D is a cavity, but the defect portion D may be foreign matter mixed in a material different from that of the object E to be inspected. In this case, since there is a difference in acoustic impedance (Gap) at the interface between different materials, scattered waves U1 are generated, so the configurations of the above-mentioned embodiments are effective. The ultrasonic inspection device Z of this embodiment is based on an ultrasonic defect imaging device, but it can also be applied to a non-contact in-line internal defect inspection device.
本揭示並非限定於上述實施形態者,包含各種變化例。例如,上述實施形態係為了便於理解地說明本揭示而詳細說明者,未必限定於具有說明之所有構成者。又,可將某實施形態之構成之一部分置換為其他實施形態之構成,亦可對某實施形態之構成添加其他實施形態之構成。又,對於各實施形態之構成之一部分,可追加、刪除、置換其他構成。This indication is not limited to the said embodiment, Various modification examples are included. For example, the above-mentioned embodiments are described in detail for the sake of easy understanding of the present disclosure, and are not necessarily limited to those having all the configurations described. Also, a part of the configuration of a certain embodiment may be replaced with a configuration of another embodiment, or a configuration of another embodiment may be added to the configuration of a certain embodiment. In addition, other configurations may be added, deleted, or substituted for a part of the configuration of each embodiment.
又,上述之各構成、功能、構成方塊圖之各部等亦可藉由例如由積體電路設計該等之一部分或全部而以硬體實現。又,如圖13所示,上述之各構成、功能等亦可藉由使CPU252等處理器解釋、執行實現各個功能之程式而以軟體實現。實現各功能之程式、表格、檔案等之資訊除儲存於HDD外,還可儲存於記憶體、SSD(Solid State Drive:固態驅動器)等記錄裝置、或IC(Integrated Circuit:積體電路)卡、SD(Secure Digital:安全數位)卡、DVD(Digital Versatile Disc:數位多功能光碟)等記錄媒體。In addition, each of the above-mentioned configurations, functions, and parts constituting the block diagram can also be realized by hardware by designing a part or all of them, for example, with an integrated circuit. In addition, as shown in FIG. 13, the above-mentioned configurations, functions, etc. can also be realized by software by making processors such as
又,各實施形態中,控制線及資訊線表示認為是說明上需要者,製品上未必表示出所有控制線及資訊線。可認為實際上幾乎所有構成相互連接。In addition, in each embodiment, the display of the control line and the information line is considered necessary for explanation, and not all the control lines and information lines may be shown on the product. It can be considered that virtually all components are connected to each other.
1:掃描測量裝置 2:控制裝置 3:顯示裝置 101:殼體 102:試料台 103:發送探針掃描部 104:接收探針掃描部 105:偏心距離調整部 106:設置角度調整部 110:發送探針 111:振子 112:背襯 113:整合層 114:探頭面 115:發送探針殼體 116:連接器 117:引線 118:引線 119:收發探針 120:偏心配置接收探針 120a:單位探針 121:接收探針 122:陣列型探針 122a:感音元件 140:同軸配置接收探針 201:資料處理部 202:驅動部 203:位置測量部 204:掃描控制器 205:缺陷資訊判定部 210:發送系統 211:波形產生器 212:信號放大器 220:接收系統 220a:接收系統 220b:接收系統 220c:接收系統 220d:接收系統 220e:接收系統 221:波形解析部 222:信號放大器 223:信號放大器 224:振幅圖像產生部 225:圖像合成部 231:相位擷取部 232:相位變化量算出部 235:開關 251:記憶體 252:CPU 253:記憶裝置 254:通信裝置 255:I/F a:長度 AX1:發送音軸 AX2:接收音軸 b:長度 BW:射束寬度 C1:交點 C2:交點 D:缺陷部 D1:空腔 E:被檢查體 F:流體 G:氣體 G1:圖表 G2:圖表 G3:圖表 G4:圖表 G5:圖表 L:偏心距離 L0:液面 N:健全部 R1:焦距 R2:焦距 R3:焦距 S101:放出步驟 S102:接收步驟 S103:相位擷取步驟 S104:相位變化量算出步驟 S105:形狀顯示步驟 S111:步驟 S112:步驟 T1:射束入射面積 T2:射束入射面積 U:超音波束 U1:散射波 U2:超音波束 U3:直達波 W:液體 WD:寬度 x1:掃描位置 x2:掃描位置 x3:掃描位置 Z:超音波檢查裝置 α:傾斜角度 α2:角度 β:折射角 β2:角度 θ:角度1: Scanning measuring device 2: Control device 3: Display device 101: Shell 102: Sample table 103:Send probe scanning part 104: Receiving probe scanning part 105: Eccentric distance adjustment part 106: setting angle adjustment part 110:Send probe 111: vibrator 112: Backing 113: Integration layer 114: probe surface 115: Send probe housing 116: connector 117: Lead 118:lead 119: Send and receive probe 120: Eccentric configuration receiving probe 120a: unit probe 121: Receive probe 122: Array probe 122a: sensory element 140: coaxial configuration receiving probe 201: Data Processing Department 202: Drive Department 203: Position measurement department 204: scan controller 205: Defect Information Judgment Department 210: sending system 211: Waveform generator 212: signal amplifier 220: Receiving system 220a: receiving system 220b: receiving system 220c: receiving system 220d: receiving system 220e: receiving system 221:Waveform analysis department 222: signal amplifier 223: signal amplifier 224: Amplitude image generation part 225: Image synthesis department 231: Phase acquisition unit 232: Phase variation calculation unit 235: switch 251: memory 252:CPU 253: memory device 254: Communication device 255:I/F a: length AX1: send audio axis AX2: receiving audio axis b: length BW: beam width C1: Intersection C2: Intersection D: defect department D1: Cavity E: Subject to be inspected F: Fluid G: gas G1: Chart G2: Chart G3: Chart G4: Chart G5: Chart L: eccentric distance L0: liquid level N: healthy part R1: focal length R2: focal length R3: focal length S101: release step S102: receiving step S103: Phase acquisition step S104: Phase change calculation step S105: Shape display step S111: step S112: step T1: Beam incident area T2: Beam incident area U: Ultrasonic beam U1: scattered wave U2: Ultrasonic beam U3: Direct wave W: Liquid WD: width x1: scan position x2: scan position x3: scan position Z: Ultrasonic inspection device α: tilt angle α2: Angle β: angle of refraction β2: Angle θ: angle
圖1係顯示第1實施形態之超音波檢查裝置之構成之圖。 圖2A係說明發送音軸、接收音軸及偏心距離之圖,且係發送音軸及接收音軸於鉛直方向延伸之情形。 圖2B係說明發送音軸、接收音軸及偏心距離之圖,且係發送音軸及接收音軸傾斜延伸之情形。 圖3係顯示發送探針之構造之剖視模式圖。 圖4A係來自偏心配置接收探針之接收波形,且係顯示被檢查體E之健全部N之接收波形之圖。 圖4B係來自偏心配置接收探針之接收波形,且係顯示被檢查體E之缺陷部D之接收波形之圖。 圖5係顯示信號強度資料之繪製例之圖。 圖6A係本實施形態之超音波束之傳播路徑,且係顯示對健全部入射超音波束之情形之圖。 圖6B係本實施形態之超音波束之傳播路徑,且係顯示對缺陷部入射超音波束之情形之圖。 圖7A係顯示先前之超音波檢查方法之超音波束之傳播路徑之圖,且係顯示對健全部入射時之圖。 圖7B係顯示先前之超音波檢查方法之超音波束之傳播路徑之圖,且係顯示對缺陷部入射時之圖。 圖8係顯示先前之超音波檢查方法之信號強度資料之繪製之圖。 圖9A係顯示被檢查體內之缺陷部與超音波束之相互作用之圖,且係顯示接收直達之超音波束之情況之圖。 圖9B係顯示被檢查體內之缺陷部與超音波束之相互作用之圖,且係顯示接收散射波之情況之圖。 圖10係控制裝置之功能方塊圖。 圖11係模式性顯示x軸方向之各掃描位置之偏心配置接收探針之接收信號之變化的圖。 圖12A係顯示超音波束未入射至缺陷部之掃描位置之圖。 圖12B係顯示超音波束入射至缺陷部,但發送音軸未進入缺陷部之掃描位置之圖。 圖12C係顯示超音波束入射至缺陷部,且發送音軸進入缺陷部之掃描位置之圖。 圖13係顯示控制裝置之硬體構成之圖。 圖14係顯示第1實施形態之超音波檢查方法之流程圖。 圖15係顯示第2實施形態之超音波檢查裝置之構成之圖。 圖16係顯示第2實施形態之超音波檢查裝置之功能方塊圖。 圖17係顯示第3實施形態之超音波檢查裝置之構成之圖。 圖18係顯示第4實施形態之超音波檢查裝置之構成之圖。 圖19係顯示第5實施形態之超音波檢查裝置之構成之圖。 圖20係顯示第5實施形態之超音波檢查裝置之功能方塊圖。 圖21係顯示第6實施形態之超音波檢查裝置之發送探針與偏心配置接收探針之關係之圖。 圖22係說明發送探針之射束入射面積及偏心配置接收探針之射束入射面積之關係之圖。 圖23係顯示第7實施形態之偏心配置接收探針之例之圖。 圖24係顯示第8實施形態之超音波檢查裝置之掃描測量裝置之構成之圖。 圖25係說明產生第8實施形態之效果之原因之圖。 圖26係顯示第9實施形態之超音波檢查裝置之構成之圖。 圖27係第9實施形態之超音波檢查裝置之功能方塊圖。 圖28係顯示第10實施形態之偏心配置接收探針之配置之圖。 圖29係顯示第11實施形態之偏心配置接收探針之配置之圖,且係傾斜配置單位探針之圖。 圖30係顯示第11實施形態之偏心配置接收探針之配置之圖,且係於鉛直方向配置單位探針之圖。 圖31係顯示第12實施形態之超音波檢查裝置之構成之圖。 圖32係顯示第13實施形態之超音波檢查裝置之構成之圖。 圖33係顯示第14實施形態之超音波檢查裝置之構成之圖。Fig. 1 is a diagram showing the configuration of an ultrasonic inspection device according to a first embodiment. Fig. 2A is a diagram illustrating the sending sound axis, the receiving sound axis and the eccentric distance, and it is the case where the sending sound axis and the receiving sound axis extend in the vertical direction. Fig. 2B is a diagram illustrating the sending sound axis, the receiving sound axis and the eccentric distance, and it is the situation where the sending sound axis and the receiving sound axis extend obliquely. Fig. 3 is a schematic cross-sectional view showing the structure of the sending probe. FIG. 4A is a received waveform from an eccentrically arranged receiving probe, and is a diagram showing a received waveform of a healthy part N of an object E to be inspected. FIG. 4B is a reception waveform from an eccentrically arranged reception probe, and is a diagram showing a reception waveform of a defect portion D of the object E to be inspected. Fig. 5 is a graph showing an example of plotting signal strength data. Fig. 6A is the propagation path of the ultrasonic beam of the present embodiment, and is a diagram showing the situation of incident ultrasonic beams to healthy parts. Fig. 6B is a propagation path of an ultrasonic beam according to the present embodiment, and is a diagram showing a situation where an ultrasonic beam is incident on a defect portion. Fig. 7A is a diagram showing the propagation path of the ultrasonic beam in the previous ultrasonic inspection method, and it is a diagram showing the incident time to healthy parts. Fig. 7B is a diagram showing the propagation path of the ultrasonic beam in the conventional ultrasonic inspection method, and is a diagram showing the time when it is incident on a defect portion. FIG. 8 is a graph showing the plotting of signal strength data from previous ultrasound inspection methods. FIG. 9A is a diagram showing the interaction between a defect portion in the subject to be inspected and an ultrasonic beam, and is a diagram showing a situation in which a direct ultrasonic beam is received. FIG. 9B is a diagram showing the interaction between a defect portion in the subject and an ultrasonic beam, and is a diagram showing a state of receiving scattered waves. Fig. 10 is a functional block diagram of the control device. FIG. 11 is a diagram schematically showing changes in received signals of eccentrically arranged receiving probes at various scanning positions in the x-axis direction. FIG. 12A is a diagram showing a scanning position where an ultrasonic beam is not incident on a defect portion. Fig. 12B is a diagram showing the scanning position where the ultrasonic beam is incident on the defect, but the transmitting sound axis does not enter the defect. FIG. 12C is a diagram showing the scanning position where the ultrasonic beam is incident on the defect and the sending sound axis enters the defect. Fig. 13 is a diagram showing the hardware configuration of the control device. Fig. 14 is a flow chart showing the ultrasonic inspection method of the first embodiment. Fig. 15 is a diagram showing the configuration of an ultrasonic inspection device according to the second embodiment. Fig. 16 is a functional block diagram showing the ultrasonic inspection device of the second embodiment. Fig. 17 is a diagram showing the configuration of an ultrasonic inspection device according to a third embodiment. Fig. 18 is a diagram showing the configuration of an ultrasonic inspection device according to a fourth embodiment. Fig. 19 is a diagram showing the configuration of an ultrasonic inspection device according to a fifth embodiment. Fig. 20 is a functional block diagram showing the ultrasonic inspection device of the fifth embodiment. Fig. 21 is a diagram showing the relationship between the transmitting probe and the eccentrically arranged receiving probe of the ultrasonic inspection device according to the sixth embodiment. Fig. 22 is a graph illustrating the relationship between the beam incident area of the transmitting probe and the beam incident area of the eccentrically arranged receiving probe. Fig. 23 is a diagram showing an example of receiving probes arranged eccentrically in the seventh embodiment. Fig. 24 is a diagram showing the configuration of a scanning measurement device of an ultrasonic inspection device according to an eighth embodiment. Fig. 25 is a diagram illustrating the cause of the effects of the eighth embodiment. Fig. 26 is a diagram showing the configuration of an ultrasonic inspection device according to a ninth embodiment. Fig. 27 is a functional block diagram of an ultrasonic inspection device according to a ninth embodiment. Fig. 28 is a diagram showing the arrangement of eccentrically arranged receiving probes according to the tenth embodiment. Fig. 29 is a diagram showing the arrangement of eccentrically arranged receiving probes in the eleventh embodiment, and is a diagram in which unit probes are arranged obliquely. Fig. 30 is a diagram showing the arrangement of eccentrically arranged receiving probes according to the eleventh embodiment, and is a diagram in which unit probes are arranged in the vertical direction. Fig. 31 is a diagram showing the configuration of an ultrasonic inspection device according to a twelfth embodiment. Fig. 32 is a diagram showing the configuration of an ultrasonic inspection device according to a thirteenth embodiment. Fig. 33 is a diagram showing the configuration of an ultrasonic inspection device according to a fourteenth embodiment.
1:掃描測量裝置1: Scanning measuring device
2:控制裝置2: Control device
3:顯示裝置3: Display device
110:發送探針110:Send probe
120:偏心配置接收探針120: Eccentric configuration receiving probe
121:接收探針121: Receive probe
201:資料處理部201: Data Processing Department
202:驅動部202: Drive Department
203:位置測量部203: Position measurement department
204:掃描控制器204: scan controller
210:發送系統210: sending system
211:波形產生器211: Waveform generator
212:信號放大器212: signal amplifier
220:接收系統220: Receiving system
221:波形解析部221:Waveform analysis department
222:信號放大器222: signal amplifier
231:相位擷取部231: Phase acquisition unit
232:相位變化量算出部232: Phase variation calculation unit
Z:超音波檢查裝置Z: Ultrasonic inspection device
Claims (19)
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JP2012013447A (en) * | 2010-06-29 | 2012-01-19 | Hitachi Cable Ltd | Method for inspecting defect in semiconductor single crystal |
US20140216158A1 (en) * | 2011-08-17 | 2014-08-07 | Sergio José Sanabria Martin | Air coupled ultrasonic contactless method for non-destructive determination of defects in laminated structures |
TW201534902A (en) * | 2014-02-12 | 2015-09-16 | Kla Tencor Corp | Apparatus and methods for combined brightfield, darkfield, and photothermal inspection |
TW201713946A (en) * | 2015-10-08 | 2017-04-16 | Hitachi Power Solutions Co Ltd | Defect inspection method and device thereof which separates internal defects from the normal pattern and conducts detection with high sensitivity during inspection of a test subject containing a fine and multilayer structure |
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JP2009097942A (en) | 2007-10-16 | 2009-05-07 | Ihi Aerospace Co Ltd | Noncontact-type array probe, and ultrasonic flaw detection apparatus and method using same |
US10928362B2 (en) | 2018-05-04 | 2021-02-23 | Raytheon Technologies Corporation | Nondestructive inspection using dual pulse-echo ultrasonics and method therefor |
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JP2012013447A (en) * | 2010-06-29 | 2012-01-19 | Hitachi Cable Ltd | Method for inspecting defect in semiconductor single crystal |
US20140216158A1 (en) * | 2011-08-17 | 2014-08-07 | Sergio José Sanabria Martin | Air coupled ultrasonic contactless method for non-destructive determination of defects in laminated structures |
TW201534902A (en) * | 2014-02-12 | 2015-09-16 | Kla Tencor Corp | Apparatus and methods for combined brightfield, darkfield, and photothermal inspection |
TW201713946A (en) * | 2015-10-08 | 2017-04-16 | Hitachi Power Solutions Co Ltd | Defect inspection method and device thereof which separates internal defects from the normal pattern and conducts detection with high sensitivity during inspection of a test subject containing a fine and multilayer structure |
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JP2022038664A (en) | 2022-03-10 |
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TW202208848A (en) | 2022-03-01 |
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