TWI790467B - Semiconductor processing equipment and transfer port structure between chambers - Google Patents

Abstract

Semiconductor processing equipment and the structure of the transfer port between chambers improves the structure of the transfer port between chambers, and a valve and a shield are arranged on the gasket assembly of the transfer port to ensure the structural sealing of the processing chamber. The isolation from the processing chamber area prevents particles from depositing in the transfer port area, and realizes the communication between the transfer port area and the processing chamber area, which facilitates cleaning of the transfer port area, and anti-corrosion protection is provided on the shielding sheet, liner components and valves. The coating improves the anti-corrosion performance of the transfer port structure between the chambers. The present invention reduces the particle matter in the area of the transfer port between chambers, reduces the probability of the wafer being polluted in the transfer port area, improves the yield rate of the wafer, and improves the semiconductor processing due to the improved service life of the transfer port structure between chambers. The operating rate and throughput of the device.

Description

Semiconductor processing equipment and transfer port structure between chambers

The invention relates to a semiconductor processing equipment and a transmission port structure between chambers.

Semiconductor processing equipment is employed to perform various types of processing on semiconductor devices, including etching, chemical vapor deposition, ashing, and sputtering. As shown in Fig. 1, in semiconductor processing equipment, a processing chamber 1' and an auxiliary chamber 2' are generally included. A base 3' is set in the processing chamber 1', an electrostatic chuck 4' is set on the base 3', a wafer 5' is placed on the electrostatic chuck 4', and an air inlet device 6' is also set in the processing chamber 1'. The gas inlet device 6' is connected to an external gas source 8' to provide reactive gas into the processing chamber 1' to realize the processing of the wafer 5'. At the same time, the processing chamber 1' is also provided with an exhaust device 7' for After the semiconductor manufacturing process is completed, the processing chamber 1' is evacuated to prepare for other manufacturing processes. The auxiliary chamber 2' is connected to the processing chamber 1'. The auxiliary chamber 2' can be connected to two processing chambers 1', or respectively connected to the processing chamber 1' and the external atmosphere. Its function is to transfer wafers and isolate the processing chamber 1' and the atmospheric environment to ensure that impurities in the atmosphere will not enter the processing chamber 1' and affect the semiconductor manufacturing process. A transfer port is provided between the processing chamber 1' and the auxiliary chamber 2', and a liner assembly 9' passes through the walls of the processing chamber 1' and the auxiliary chamber 2' respectively to form a transfer port, and the wafer 5' is also transferred through the transfer port. The ports pass between the treatment chamber 1' and the auxiliary chamber 2'. On each transfer port, a valve 10' is provided, and the valve 10' is usually arranged on the side of the auxiliary chamber 2', and the opening and closing of the valve 10' is controlled by a valve driving device 11'. When the valve 10' is closed, The transfer port is closed, and the processing chamber 1' is a closed structure. When the valve 10' is opened, the wafer 5' can be transferred through the transfer port.

The transfer port connecting the processing chamber 1' is usually set in the area where the reaction gas in the processing chamber 1' is easy to gather, so when the reaction gas processes the wafer 5', the reaction gas will extend to the position of the transfer port , during the wafer processing process, the by-product particles generated will adhere to the liner assembly 9', and at the same time, the friction generated by the opening and closing of the valve 10' will also bring some fine particles, which will also adhere to the liner assembly 9' . Since the liner assembly 9' and the valve 10' are generally made of aluminum alloy, the surface of which is coated with an anodized coating, the anodized coating is easily eroded by the reactive gas, and the flaking of the eroded reactant will also form particles. In order to avoid damage to the anodized coating, during the gas cleaning process in the processing chamber 1', the cleaning gas generally does not extend to the position of the gasket assembly 9' and the valve 10', which causes the gasket assembly 9' and the valve 10 'The particles at the location cannot be cleaned up in time.

With the continuous accumulation of particles at the transfer port and valve, the particles will move to the surface or back of the wafer during the process of transferring the wafer, increasing the defects of the wafer and affecting the yield of the wafer. At the same time, as the degree of corrosion and contamination increases, the maintenance work of cleaning and replacing transfer ports and valves corroded or contaminated by particles must be performed more frequently, and the maintenance process is often complicated and time-consuming. If semiconductor processing equipment often has a long downtime, the operating rate of the equipment becomes poor, resulting in low throughput.

The present invention provides a semiconductor processing equipment and a transfer port structure between chambers, which greatly reduces the number of particles in the transfer port area between chambers, thereby reducing the probability of wafers being polluted when passing through the transfer port area, and improving the quality of the wafer. rate, reducing wafer defects, and improving the operating rate and throughput of semiconductor processing equipment.

In order to achieve the above object, the present invention provides an inter-chamber transfer port structure, which is used to connect the processing chamber and the auxiliary chamber in the semiconductor processing equipment, so as to realize the transfer of wafers between the chambers. The inter-chamber transfer port structure Include: A gasket assembly, which passes through the chamber walls of the processing chamber and the auxiliary chamber adjacent to the processing chamber to form a delivery port area; a valve, which is arranged on the side of the auxiliary chamber, for sealing the gasket assembly; the gasket Corrosion-resistant coatings on components and valves protect liner components and valves from plasma corrosion inside the process chamber.

The inter-chamber transfer port structure further includes: a shielding sheet, which is arranged on one side of the processing chamber, and the shielding sheet is used to block the transfer port area to realize the isolation between the transfer port area and the processing chamber. It has an anti-corrosion coating to prevent the shield from being corroded by the plasma inside the processing chamber.

The shielding sheet moves in the vertical direction through the shielding sheet driving mechanism, and the shielding sheet driving mechanism is provided with an anti-corrosion coating to prevent the shielding sheet driving mechanism from being corroded by the plasma inside the processing chamber.

The valve includes a valve body and a sealing ring embedded on the valve body, and the anti-corrosion coating is coated on the side of the valve body where the sealing ring is arranged, and is located in the inner area of the sealing ring to prevent the valve from contacting the processing chamber. The internal plasma is corroded by direct contact.

The valve realizes horizontal and vertical movement through the valve driving mechanism.

The anti-corrosion coating adopts Teflon coating, or polymer coating, or silicon carbide coating, or rare earth oxide coating, or rare earth fluoride coating.

The thickness of the anti-corrosion coating is 5 μm-30 μm.

The anti-corrosion coating is formed by means of deposition or liquid hanging.

The present invention also provides a semiconductor processing equipment. The semiconductor processing equipment includes at least one processing chamber and at least one auxiliary chamber. Circle, the processing chamber and the auxiliary chamber are connected by the inter-chamber transmission port structure.

The processing chamber is an etching processing chamber, or a deposition processing chamber, or an ashing processing chamber.

The present invention also provides a cleaning method for semiconductor processing equipment, the semiconductor processing equipment includes at least one processing chamber and at least one auxiliary chamber, the processing chamber and the auxiliary chamber are connected by a transfer port structure between chambers, so as to The wafer is transferred between the chambers, and the inter-chamber transfer port structure includes: a liner assembly, which respectively passes through the chamber wall of the processing chamber and the auxiliary chamber adjacent to the processing chamber to form a transfer port area; a valve, which is set On the side of the auxiliary chamber, it is used to seal the gasket assembly; the gasket assembly and the valve have an anti-corrosion coating to prevent the gasket assembly and the valve from being corroded by the plasma inside the processing chamber; the shielding sheet is arranged on the processing chamber On one side of the chamber, the shielding sheet is used to shield the area of the transmission port to realize the isolation between the area of the transfer port and the processing chamber. The shielding sheet has an anti-corrosion coating to prevent the shielding sheet from being corroded by the plasma inside the processing chamber; The cleaning method includes: moving the shutter to make the processing chamber communicate with the transfer port area; closing the valve to seal the gasket assembly; allowing the plasma to enter the transfer port area to clean the inner surface of the gasket assembly and the valve surface facing the transfer port area .

The present invention improves the structure of the transmission port between chambers, and at the same time sets a valve and a shielding piece on the liner assembly of the transmission port. The isolation of particles prevents the deposition of particles in the transfer port area, and realizes the communication between the transfer port and the area and the processing chamber area, which facilitates cleaning of the transfer port area and removal of particles, and anti-corrosion is set on the shielding sheet, liner components and valves. The coating greatly improves the anti-corrosion performance of the transmission port structure between chambers and improves the service life. The present invention greatly reduces the number of particles in the area of the transfer port between chambers, thereby reducing the probability of contamination of the wafer when passing through the transfer port area, and improving the yield of the wafer. Wafer defects are reduced, and at the same time, due to the increased service life of the transfer port structure between chambers, frequent replacement is not required, and the operating rate and throughput of semiconductor processing equipment are also improved.

1,1': processing chamber

2,2': Auxiliary cavity

3,3': base

4,4': Electrostatic chuck

5,5': Wafer

6,6': Air intake device

7,7': exhaust device

8,8': air source

9,9’,9-1,9-2: Gasket assembly

10,10',10-1,10-2: valve

11,11': valve drive

12,12-1,12-2: blocking sheet

13: Shield driving mechanism

14: Anti-corrosion coating of liner components

15: Valve anti-corrosion coating

16: sealing ring

17: Anti-corrosion coating for shielding sheet

18: Valve body

1-1: Etching chamber

1-2: Ashing chamber

FIG. 1 is a schematic diagram of the structure of semiconductor processing equipment in the prior art.

Fig. 2 is a schematic structural diagram of a semiconductor processing equipment provided by the present invention.

Fig. 3 is an enlarged schematic view of the transfer port structure between chambers in Fig. 2 .

Figure 4 is a left side view of the valve in Figure 3.

Fig. 5 is a schematic diagram of an embodiment of the present invention.

The preferred embodiment of the present invention will be described in detail below according to Fig. 2 to Fig. 5 .

As shown in Figure 2, the present invention provides a semiconductor processing device, which should at least include a processing chamber 1, a base 3 is arranged in the processing chamber 1, an electrostatic chuck 4 is arranged on the base 3, and the wafer 5 is placed on the electrostatic chuck 4, and an air inlet device 6 is also provided in the processing chamber 1. The air inlet device 6 is connected to an external gas source 8, and provides reactive gas to enter the processing chamber 1 to realize the processing of the wafer 5. Simultaneous processing The chamber 1 is also provided with an exhaust device 7, which is used to evacuate the processing chamber 1 after the wafer process is completed, and prepare for the next process.

The processing chamber 1 may be a chemical vapor deposition reaction chamber for performing a chemical vapor deposition process on the wafer 5 . At this time, a wafer heating device (not shown in the figure) is also provided in the processing chamber 1 for heating the wafer 5 . The reaction gas enters the processing chamber 1 from the intake device 6, flows through the surface of the wafer 5, and deposits on the surface of the wafer 5. After the process is completed, the exhaust device 7 discharges the reaction gas from the processing chamber 1 to restore the vacuum of the processing chamber 1 state.

The processing chamber 1 may also be a plasma etching reaction chamber for performing an etching process on the wafer 5 .

If the processing chamber 1 is a capacitively coupled plasma etching reaction chamber, the top wall of the reaction chamber 1 can be used as an upper electrode, and the electrostatic chuck 4 is used as a lower electrode, and a radio frequency power source is usually set to be applied to the lower electrode to connect the upper and lower electrodes. The reactive gas is excited into a plasma. The reactive gas enters the processing chamber 1 from the intake device 6 and is excited into plasma, which etches the wafer 5. After the process is completed, the exhaust device 7 discharges the reactive gas out of the processing chamber 1 to restore the vacuum of the processing chamber 1 state.

If the processing chamber 1 is an inductively coupled plasma etching reaction chamber, the top of the processing chamber 1 is provided with an inductively coupled coil (not shown), and the radio frequency power source provides radio frequency energy to the inductively coupled coil, so that the inductively coupled coil generates a magnetic field, and the reaction gas Entering the processing chamber 1 from the inlet device 6, the reactive gas is ionized by the magnetic field into plasma, and the plasma etches the wafer 5. After the process is completed, the exhaust device 7 discharges the reactive gas out of the processing chamber 1 to restore the processing chamber 1. Vacuum state.

The processing chamber 1 may also be a photoresist removal reaction chamber for ashing the wafer 5 . At this time, an oxygen atom generator (not shown) is also arranged on the processing chamber 1, and the plasma enters the processing chamber 1 from the inlet device 6, and the oxygen atom generator utilizes the plasma to dissociate the oxygen-containing reaction gas into oxygen atoms , using oxygen atoms to remove the photoresist on the wafer 5 , the photoresist is oxidized into gas, and then is discharged out of the processing chamber 1 through the exhaust device 7 .

A semiconductor device can only perform a single process (etching, deposition or ashing). At this time, only one processing chamber 1 or several processing chambers 1 can be arranged in the semiconductor device, and each processing chamber performs the same process. However, multiple wafers can be processed at the same time, increasing the processing speed. At this time, in order to maintain the isolation of the processing chamber 1, an auxiliary chamber 2 is generally provided, and the auxiliary chamber 2 is respectively connected to the processing chamber 1 and the external atmospheric environment to realize the isolation between the vacuum environment of the processing chamber 1 and the atmospheric environment. For example, an auxiliary chamber 2 may be provided to connect the wafer storage box and multiple processing chambers 1 for transferring wafers between different processing chambers 1 and wafer storage boxes. A manipulator (not shown in the figure) can be set in the auxiliary chamber 2, Unprocessed wafers are taken out from the wafer storage box and put into the processing chamber 1 for reaction. After the reaction is completed, the processed wafers 5 are taken out from the processing chamber 1 and put into the wafer storage box.

A semiconductor device can also perform multiple different processes at the same time, that is, etching, deposition or ashing are performed in different processing chambers 1 . At this time, the auxiliary chamber 2 not only undertakes the task of accessing wafers from the wafer storage box into the processing chamber 1, but also undertakes the task of transferring the wafers from the processing chamber 1 of the previous process according to different process sequences. Take it out, put it into the processing chamber 1 of the subsequent process to carry out the subsequent process. For example, the auxiliary chamber 2 first takes out an unprocessed wafer 5 from the wafer storage box and puts it into the deposition processing chamber for the deposition process. After the deposition process is completed, the auxiliary chamber 2 takes out the wafer 5 from the deposition processing chamber and puts it into the deposition processing chamber. The etching process is performed in the etching processing chamber. After the etching process is completed, the auxiliary chamber 2 takes out the wafer 5 from the etching processing chamber and puts it into a wafer storage box.

As shown in Figures 2 and 3, the auxiliary chamber 2 is connected to the processing chamber 1 through the transfer port structure between the chambers, and the wafer 5 is processed between the auxiliary chamber 2 and the processing chamber through the transfer port structure between the chambers. Transport between chambers 1. The inter-chamber transfer port structure includes: a gasket assembly 9, which respectively passes through the walls of the processing chamber 1 and the auxiliary chamber 2 to form a transfer port area; a valve 10, which is arranged on the side of the auxiliary chamber 2 for sealing The liner assembly 9 ; the shielding sheet 12 , which is arranged on one side of the processing chamber 1 , is used to shield the transfer port and realize the isolation between the transfer port area and the processing chamber 1 .

In one embodiment, the chamber wall of the processing chamber 1 and the chamber wall of the auxiliary chamber 2 are respectively provided with an opening, and the two openings are oppositely arranged, the gasket assembly 9 passes through the two openings, and the outer surface of the gasket assembly 9 It is closely combined with the inner surfaces of the two openings to form a delivery port area for transferring wafers between the processing chamber 1 and the auxiliary chamber 2 . The liner assembly 9 is embedded in openings on the walls of the processing chamber 1 and the auxiliary chamber 2 . Both ends of the liner assembly 9 are flush with the inner surfaces of the walls of the processing chamber 1 and the auxiliary chamber 2 .

The liner assembly 9 is usually made of aluminum alloy, and the surface is anodized, that is, coated with anodic oxide material, such as anodized aluminum. In order to improve corrosion resistance, the inner surface of the liner assembly 9 is provided with Corrosion coating 14, the anti-corrosion coating 14 of the gasket assembly covers the entire inner surface of the gasket assembly 9 communicating with the processing chamber 1, preventing the anodic oxide material from being exposed to the reaction gas environment of the processing chamber 1. The anti-corrosion coating 14 of the liner assembly can adopt any anti-corrosion effect, especially anti-plasma corrosion material, such as can adopt non-metallic coating (Teflon coating, macromolecular polymer coating, silicon carbide coating, etc.), or rare earth oxides, or rare earth fluorides (YF ₃ coating). Rare earth fluorides have better plasma corrosion resistance than rare earth oxides. The anti-corrosion coating 14 of the liner component is formed by deposition or liquid hanging to achieve better surface smoothness and material purity. The anti-corrosion coating 14 of the gasket component has a thickness of 5 μm-30 μm, and a thinner thickness can save costs and prevent stress spalling.

As shown in Fig. 3 and Fig. 4, the valve 10 further includes: a valve body 18, which is used to block the liner assembly 9; a sealing ring 16, which is embedded on the valve body 18, and is used to realize the processing cavity 1; the valve anti-corrosion coating 15, which is coated on the side of the valve body 18 where the sealing ring 16 is arranged, and is located in the inner area of the sealing ring 16, is used to prevent the valve 10 from being directly connected to the plasma in the processing chamber 1. corroded by contact.

Described valve anti-corrosion coating 15 can adopt any anti-corrosion effect, especially anti-plasma corrosion material, for example can adopt non-metallic coating (Teflon coating, macromolecular polymer coating, silicon carbide coating etc.), or with rare earth oxides, or with rare earth fluorides (YF ₃ coating). Rare earth fluorides have better plasma corrosion resistance than rare earth oxides. The anti-corrosion coating 15 for the valve is formed by deposition or liquid hanging to achieve better surface smoothness and material purity. The valve anti-corrosion coating 15 has a thickness of 5 μm-30 μm, and a thinner thickness can save costs and prevent stress spalling.

Valve driving device 11 is used to realize the movement of valve 10. Valve driving device 11 can drive valve 10 to move in the horizontal direction, and apply a horizontal pressure to valve 10, so that sealing ring 16 can more ideally realize the protection of the transmission port area. It is well sealed, and at the same time, the valve driving device 11 can also drive the valve 10 to move in the vertical direction, so that the wafer can be smoothly transferred between the processing chamber 1 and the auxiliary chamber 2 through the transfer port area. Since the valve driving device 11 needs to drive the valve 10 in the horizontal and vertical directions, the mechanical structure of the valve driving device 11 is more complicated than that of the shutter driving mechanism 13, and it is not convenient to carry out anti-corrosion coating on the more complicated mechanical mechanisms. Layer treatment to avoid mechanical failure, so a better way is to set both the valve drive device 11 and the valve 10 on the side of the auxiliary chamber 2, so that there is no need to perform anti-corrosion treatment on the valve drive device 11.

As shown in FIG. 3 and FIG. 4 , the shielding sheet 12 is also usually made of aluminum alloy, and the surface is anodized, that is, coated with anodic oxide material, such as anodized aluminum. Since the shielding sheet 12 is disposed in the processing chamber 1, it needs to be in a plasma environment frequently, and anti-corrosion treatment must be performed. In order to improve corrosion resistance, the entire surface of the shielding sheet 12 is covered with a shielding sheet anti-corrosion coating 17 . Because the main function of the blocking sheet is to isolate the transfer port and the processing chamber 1, there is no need to have the sealing function of the valve, and there is no need to apply pressure to the blocking sheet 12 in the horizontal direction. Therefore, the movement mode of the blocking sheet 12 can be relatively simple. The ability to move in the vertical direction is enough, so the shielding sheet driving mechanism 13 of the shielding sheet 12 is correspondingly much simpler, and the shielding sheet driving mechanism 13 only uses a linear drive mechanism to realize vertical movement, avoiding the use of too many bearings and mechanism to realize the movement in the horizontal direction, so that it is convenient to coat the anti-corrosion coating on the shielding sheet drive mechanism 13, so that the shielding sheet 12 and the shielding sheet driving mechanism 13 are all covered by the anti-corrosion coating, improving service life in a plasma environment. The anti-corrosion coating can adopt any material with anti-corrosion effect, especially anti-plasma corrosion, such as non-metallic coating (Teflon coating, polymer coating, silicon carbide coating, etc. ), or rare earth oxides, or rare earth fluorides (YF ₃ coating). Rare earth fluorides have better plasma corrosion resistance than rare earth oxides. The anti-corrosion coating is formed by deposition or liquid suspension to achieve better surface flatness and material purity. The thickness of the anti-corrosion coating is 5 μm-30 μm, and a thinner thickness can save cost and prevent stress peeling.

As shown in Fig. 5, in one embodiment of the present invention, the semiconductor processing equipment can simultaneously perform etching treatment and ashing treatment on the wafer, and the semiconductor processing equipment includes at least one etching treatment chamber 1-1 and an ashing treatment chamber 1-1. A processing chamber 1-2, an auxiliary chamber 2 is also provided in the semiconductor processing equipment, and the auxiliary chamber 2 is respectively connected to the etching processing chamber 1-1 and the ashing processing chamber 1-2 through the inter-chamber transfer port structure provided by the present invention, The liner assembly 9-1 passes through the walls of the etching treatment chamber 1-1 and the auxiliary chamber 2 to form a transmission port area, and the liner assembly 9-2 passes through the walls of the ashing treatment chamber 1-2 and the auxiliary chamber 2 to form a transmission port area. Port area, the auxiliary chamber 2 is also connected to a wafer storage box (not shown in the figure) communicated with the atmosphere. After the process starts, the manipulator in the auxiliary chamber 2 takes out the wafer to be processed from the wafer storage box, the valve 10-1 and the shutter 12-1 are opened, and the transfer between the auxiliary chamber 2 and the etching processing chamber 1-1 The port is opened, and the wafer is sent into the etching processing chamber 1-1 from the inter-chamber transfer port structure between the auxiliary chamber 2 and the etching processing chamber 1-1, the valve 10-1 and the blocking sheet 12-1 are closed, and the etching process Reactive gas is introduced into the chamber 1-1 to start the etching process of the wafer. After the etching process is finished, the remaining reaction gas in the etching processing chamber 1-1 is exhausted, the valve 10-1 and the shielding sheet 12-1 are opened, and the etched wafer is transferred to the auxiliary chamber 2 through the inter-chamber transfer port structure. Next, the valve 10-2 and the blocking sheet 12-2 are opened, the transfer port between the auxiliary chamber 2 and the ashing processing chamber 1-2 is opened, and the etched wafer is transferred from the auxiliary chamber 2 to the ashing processing chamber 1-2. The inter-chamber transfer port structure between the chambers is sent into the ashing processing chamber 1-2, the valve 10-2 and the shielding sheet 12-2 are closed, and the reaction gas is introduced into the ashing processing chamber 1-2, and the process of wafer processing is started. Ashing process. After the ashing process is completed, discharge the remaining reaction gas in the ashing processing chamber 1-2, open the valve 10-2 and the shielding sheet 12-2, and transfer the ashed wafer to the auxiliary chamber through the inter-chamber transfer port structure. Cavity 2. Finally, the etched and ashed wafers are put into the wafer storage box from the auxiliary chamber 2 .

The processing chamber is filled with reactive gas, and during the process of wafer processing, the shielding sheet is closed all the way, so that the reactive gas can be prevented from entering the area of the transfer port, and the possibility of corrosion of the transfer port structure between chambers can be further reduced.

It is also necessary to regularly clean the etching treatment chamber 1-1 and the ashing treatment chamber 1-2. Since the inner surface of the liner assembly has an anti-corrosion coating and the valve main body also has an anti-corrosion coating, the entire delivery port area is It can be exposed to the plasma environment without being corroded. At this time, the valve is closed to form a sealed space in the processing chamber, and the blocking sheet is opened so that the cleaning gas can extend into the transfer port area to clean the processing chamber and the transfer port area. Remove particles adhering to shields, gasket components, and valves in a timely manner.

The present invention improves the structure of the transmission port between chambers, and at the same time sets a valve and a shielding piece on the liner assembly of the transmission port. The isolation of particles prevents the deposition of particles in the transfer port area, and realizes the communication between the transfer port and the area and the processing chamber area, which facilitates cleaning of the transfer port area and removal of particles, and anti-corrosion is set on the shielding sheet, liner components and valves. The coating greatly improves the anti-corrosion performance of the transmission port structure between chambers and improves the service life. The invention greatly reduces the number of particles in the area of the transfer port between the chambers, thereby reducing the probability of the wafer being polluted when passing through the transfer port area, improving the yield rate of the wafer, reducing wafer defects, and at the same time due to the inter-chamber The lifespan of the transfer port structure is improved without frequent replacement, and the operating rate and throughput of the semiconductor processing equipment are also improved.

Although the content of the present invention has been described in detail with the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the above disclosure. Therefore, the protection scope of the present invention should be defined by the appended patent application scope.

1: processing chamber

2: Auxiliary cavity

3: Base

4: Electrostatic chuck

5: Wafer

6: Air intake device

7: Exhaust device

8: Air source

9: Pad assembly

10: Valve

11: Valve driver

12: Blocking film

13: Shield driving mechanism

14: Anti-corrosion coating of liner components

15: Valve anti-corrosion coating

Claims (10)

A transfer port structure between chambers is used to connect a processing chamber and an auxiliary chamber in semiconductor processing equipment to realize the transfer of wafers between chambers, wherein the transfer port structure between chambers includes: a pad assembly, They respectively pass through the chamber wall of the processing chamber and the auxiliary chamber adjacent to the processing chamber to form a delivery port area; and a valve, which is arranged in the auxiliary chamber, is used to seal the gasket assembly; a shield A sheet, which is arranged in the processing chamber, the shielding sheet is used to block the area of the transmission port, and realize the isolation between the area of the transmission port and the processing chamber; both the gasket assembly and the valve have an anti-corrosion coating to prevent the liner assembly and the valve from being corroded by the plasma inside the processing chamber, and the shielding sheet has the anti-corrosion coating to prevent the shielding sheet from being corroded by the plasma inside the processing chamber. The inter-chamber transfer port structure as claimed in claim 1, wherein the shutter is moved in the vertical direction by a shutter driving mechanism, and the shutter driving mechanism is provided with the anti-corrosion coating to prevent the shutter from being driven. Mechanisms are etched by the plasma inside the processing chamber. The inter-chamber transmission port structure as claimed in item 1, wherein the valve comprises a valve body and a sealing ring embedded on the valve body, the anti-corrosion coating is coated on the valve body and the sealing ring is provided One side of the sealing ring, located in the inner area of the sealing ring, is used to prevent the valve from being corroded due to direct contact with the plasma inside the processing chamber. The inter-chamber transmission port structure as claimed in claim 3, wherein the valve realizes horizontal and vertical movement through a valve driving mechanism. The inter-chamber transmission port structure as described in any one of claim 1 to claim 3, wherein the anti-corrosion coating adopts Teflon coating, polymer coating, silicon carbide coating, rare earth oxide coating or rare earth fluoride coating either. The inter-chamber delivery port structure according to any one of claim 1 to claim 3, wherein the anti-corrosion coating has a thickness of 5 μm-30 μm. The inter-chamber transmission port structure according to any one of claim 1 to claim 3, wherein the anti-corrosion coating is formed by deposition or liquid hanging. A semiconductor processing equipment, wherein the semiconductor processing equipment includes at least one processing chamber and at least one auxiliary chamber, the processing chamber is used to process a wafer with a semiconductor process, the auxiliary chamber is used to transport the wafer, the processing chamber and the The auxiliary chambers are connected by the inter-chamber transfer port structure as described in any one of claim 1 to claim 7. The semiconductor processing equipment as claimed in claim 8, wherein the processing chamber is any one of an etching processing chamber, a deposition processing chamber, and an ashing processing chamber. A cleaning method for semiconductor processing equipment, wherein the semiconductor processing equipment includes at least one processing chamber and at least one auxiliary chamber, the processing chamber and the auxiliary chamber are connected by an inter-chamber transfer port structure to transfer crystals between chambers Circle, the inter-chamber transfer port structure includes: a liner assembly, which respectively passes through the chamber wall of the processing chamber and the auxiliary chamber adjacent to the processing chamber to form a transfer port area; a valve, which is arranged on One side of the auxiliary chamber is used to seal the liner assembly; both the liner assembly and the valve have an anti-corrosion coating to prevent the liner assembly and the valve from being corroded by the plasma inside the processing chamber; and a a shielding sheet, which is arranged on one side of the processing chamber, and the shielding sheet is used to shield the transmission The mouth area realizes the isolation between the transmission port area and the processing chamber, and the anti-corrosion coating is provided on the shielding sheet to prevent the shielding sheet from being corroded by the plasma inside the processing chamber; the cleaning method includes: moving the shielding sheet making the processing chamber communicate with the transfer port area; closing the valve to seal the gasket assembly; and allowing plasma to enter the transfer port area to clean the inner surface of the gasket assembly and the valve on the side facing the transfer port area surface.

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