TWI789260B - Display device - Google Patents

Abstract

A display device includes a black matrix substrate, an active device substrate, a liquid crystal layer and a backlight module. The black matrix substrate includes a black matrix, a patterned structure and a reflective layer. The patterned structure is overlapping with the black matrix. The reflective layer is disposed above the patterned structure to form reflective microstructures. The active device substrate is overlapping with the black matrix substrate. The liquid crystal layer is located between the black matrix substrate and the active device substrate. The black matrix substrate is located between the active device substrate and the backlight module. The reflective microstructures are located between the black matrix and the backlight module.

Description

display device

The present invention relates to a display device, and in particular to a display device including a black matrix.

Generally speaking, a liquid crystal display device includes a backlight module and a liquid crystal panel. The backlight module includes a light source, and the light emitted by the light source passes through the liquid crystal panel to present a picture to be displayed. In the current liquid crystal display device, the liquid crystal panel contains many light-reflecting or light-absorbing structures, which may prevent the light emitted by the light source from passing through the liquid crystal panel smoothly, and reduce the brightness of the liquid crystal display device. In order to increase the brightness of the liquid crystal display device, it is often necessary to use a higher power light source, resulting in energy loss.

The invention provides a display device, which can improve the problem of insufficient brightness of the display device.

At least one embodiment of the invention provides a display device. The display device includes a black matrix substrate, an active element substrate, a liquid crystal layer and a backlight module. The black matrix substrate includes a black matrix, a patterned structure and a reflective layer. The patterned structure overlaps the black matrix. The reflective layer is disposed on the patterned structure to form a plurality of reflective microstructures. The active element substrate overlaps the black matrix substrate. The liquid crystal layer is located between the black matrix substrate and the active element substrate. The black matrix substrate is located between the active component substrate and the backlight module. The reflective microstructure is located between the black matrix and the backlight module.

FIG. 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.

Please refer to FIG. 1 , the display device 1 includes a black matrix substrate 10 , an active device substrate 20 , a liquid crystal layer 30 and a backlight module 40 .

The black matrix substrate 10 includes a black matrix 150 , a patterned structure 120 and a reflective layer 130 . In this embodiment, the black matrix substrate 10 further includes a first substrate 100 , a dielectric structure 110 , a first buffer layer PV1 , a second buffer layer PV2 , a protective layer 140 , a color conversion element 160 and a first polarizing structure PL1 .

The first substrate 100 is a transparent substrate, and the material includes, for example, glass, quartz, organic polymer or other applicable materials.

The dielectric structure 110 is located on the first substrate 100 . The dielectric structure 110 includes, for example, a single dielectric layer or multiple dielectric layers. In some embodiments, the dielectric structure 110 further includes a conductive layer (not shown), but the invention is not limited thereto. In some embodiments, no conductive layer is included in the dielectric structure 110 .

The patterned structure 120 is disposed on the dielectric structure 110 . The patterned structure 120 overlaps the black matrix 150 . In this embodiment, part of the dielectric structure 110 is located between the patterned structure 120 and the first substrate 100 , but the invention is not limited thereto. In other embodiments, the patterned structure 120 is directly formed on the first substrate 100 , and the dielectric structure 110 is not located between the patterned structure 120 and the first substrate 100 .

In this embodiment, the patterned structure 120 includes a plurality of grooves 121 located on a side of the patterned structure 120 facing away from the backlight module 40 , and the grooves 121 do not penetrate the patterned structure 120 . In this embodiment, the patterned structure 120 includes a through hole 122 , and part of the dielectric structure 110 is located in the through hole 122 , but the invention is not limited thereto. In other embodiments, the patterned structure 120 does not include the via hole 122 , and the patterned structure 120 covers the entire dielectric structure 110 . In this embodiment, the through hole 122 of the patterned structure 120 overlaps the opening 152 of the black matrix 150 . In this embodiment, the sidewalls of the through hole 122 are aligned with the sidewalls of the opening 152 , but the invention is not limited thereto. In other embodiments, the sidewalls of the through hole 122 deviate from the sidewalls of the opening 152 .

The patterned structure 120 is, for example, an organic insulating material or an inorganic insulating material.

The reflective layer 130 is disposed on the patterned structure 120 to form a plurality of reflective microstructures 131 . In this embodiment, the reflective layer 130 is formed on the groove 121 , and the reflective layer 130 is not formed in the through hole 122 . The reflective layer 130 overlaps the black matrix 150 and does not overlap the color conversion element 160 .

In this embodiment, the reflective layer 130 includes a through hole 132 . In this embodiment, the through hole 132 of the reflective layer 130 overlaps the opening 152 of the black matrix 150 . In this embodiment, the sidewalls of the through hole 132 are aligned with the sidewalls of the opening 152 , but the invention is not limited thereto. In other embodiments, the sidewalls of the through hole 132 deviate from the sidewalls of the opening 152 .

In some embodiments, the width of the reflective microstructure 131 is W, and the thickness of the reflective microstructure 131 (for example, the depth of the groove formed by the reflective structure 131) is T, tan(θ)=2T/W, and 7 Degree ≤ θ ≤ 20 degrees, but the present invention is not limited thereto. In some embodiments, the reflectivity of the reflective microstructures 131 in the Specular Component Excluded (SCE) mode is less than or equal to 100% and greater than or equal to 50%.

In some embodiments, the material of the reflective layer 130 includes a metal material (such as aluminum, silver, or an alloy of the aforementioned metals or a stacked layer of the aforementioned metals) or other suitable materials.

In some embodiments, a first buffer layer PV1 is optionally included between the reflective layer 130 and the patterned structure 120 . In some embodiments, the first buffer layer PV1 is configured to enhance the adhesion between the reflective layer 130 and the patterned structure 120 .

The protective layer 140 is located on the reflective layer 130 . In this embodiment, the protective layer 140 is located between the black matrix 150 and the reflective layer 130 . In some embodiments, the protective layer 140 is configured as an anti-rust layer and used to protect the black matrix 150 and the reflective layer 130 .

In this embodiment, the passivation layer 140 includes a through hole 142 , and part of the dielectric structure 110 is located in the through hole 142 , but the invention is not limited thereto. In other embodiments, the protective layer 140 does not include the through hole 142 , and the black matrix 150 and the color conversion element 160 cover the protective layer 140 . In this embodiment, the through holes 142 of the passivation layer 140 overlap the openings 152 of the black matrix 150 . In this embodiment, the sidewalls of the through hole 142 are aligned with the sidewalls of the opening 152 , but the invention is not limited thereto. In other embodiments, the sidewalls of the through hole 142 deviate from the sidewalls of the opening 152 .

In some embodiments, a second buffer layer PV2 is optionally included between the protective layer 140 and the reflective layer 130 . In some embodiments, the second buffer layer PV2 is configured to enhance the adhesion between the reflective layer 130 and the protective layer 140 .

The color conversion element 160 is located in the opening 152 of the black matrix 150 . The color conversion element 160 includes, for example, a filter material, a quantum dot material, or other suitable materials or a combination of the above materials. In some embodiments, the thickness of the color conversion element 160 is less than or equal to the thickness of the black matrix 150 .

The first polarizing structure PL1 is disposed between the liquid crystal layer 30 and the backlight module 40 . In this embodiment, the first polarizing structure PL1 is disposed on the side of the first substrate 100 facing the backlight module 40 , but the invention is not limited thereto. In other embodiments, the first polarizing structure PL1 is disposed on a side of the first substrate 100 facing the liquid crystal layer 30 .

The active device substrate 20 overlaps the black matrix substrate 10 . The liquid crystal layer 30 is located between the black matrix substrate 10 and the active device substrate 20 . In this embodiment, the active device substrate 20 includes a second substrate 200, an insulating structure 210, a first anti-reflection layer 220, a first conductive layer 230, a second anti-reflection layer 240, a second conductive layer 250 and a second polarizing structure PL2.

The second substrate 200 is a transparent substrate, and the material includes, for example, glass, quartz, organic polymer or other applicable materials.

The insulating structure 210 is located on the second substrate 200 . The insulating structure 210 is a multi-layer structure. In FIG. 1 , the boundaries between the layers in the insulating structure 210 are omitted. The first anti-reflection layer 220 , the first conductive layer 230 , the second anti-reflection layer 240 and the second conductive layer 250 are located in the insulating structure 210 .

The first conductive layer 230 is located between the second substrate 200 and the liquid crystal layer 30 . In some embodiments, the material of the first conductive layer 230 includes metal, such as molybdenum, copper, aluminum, thallium, gold or alloys of the above materials or stacked layers of the above materials.

The first anti-reflection layer 220 is located between the first conductive layer 230 and the second substrate 200 , and directly contacts the first conductive layer 230 . In this embodiment, the sidewalls of the first antireflection layer 220 are aligned with the sidewalls of the first conductive layer 230 , but the invention is not limited thereto. In other embodiments, the width of the first anti-reflection layer 220 is greater than that of the first conductive layer 230 , and the sidewalls of the first anti-reflection layer 220 deviate from the sidewalls of the first conductive layer 230 . In some embodiments, the material of the first anti-reflection layer 220 includes metal oxide, metal nitride, metal oxynitride or other suitable materials, such as metal oxide (such as MoTaOx), metal nitride, metal oxynitride or other materials.

The second conductive layer 250 is located between the second substrate 200 and the liquid crystal layer 30 . The first conductive layer 230 is closer to the second substrate 200 than the second conductive layer 250 , and the second conductive layer 250 is closer to the liquid crystal layer 30 than the first conductive layer 230 . In some embodiments, the material of the second conductive layer 250 includes metals, such as molybdenum, copper, aluminum, thallium, gold, or alloys of the above materials or stacked layers of the above materials.

The second anti-reflection layer 240 is located between the second conductive layer 250 and the second substrate 200 , and directly contacts the second conductive layer 250 . In this embodiment, the sidewalls of the second anti-reflection layer 240 are aligned with the sidewalls of the second conductive layer 250 , but the invention is not limited thereto. In other embodiments, the width of the second anti-reflection layer 240 is greater than that of the second conductive layer 250 , and the sidewalls of the second anti-reflection layer 240 deviate from the sidewalls of the second conductive layer 250 . In some embodiments, the material of the second anti-reflection layer 240 includes semiconductor material, such as amorphous silicon or other materials.

In this embodiment, the first anti-reflection layer 220 and the second anti-reflection layer 240 are configured to reduce the reflection of light from the outside to the active device substrate 20 , thereby reducing the impact of ambient light on the display screen.

The second polarizing structure PL2 is disposed on the second substrate 200 . In this embodiment, the second polarizing structure PL2 is disposed on a side of the second substrate 200 away from the liquid crystal layer 30 , but the invention is not limited thereto. In other embodiments, the second polarizing structure PL2 is disposed on a side of the second substrate 200 facing the liquid crystal layer 30 .

The backlight module 40 overlaps the black matrix substrate 10 , the active device substrate 20 and the liquid crystal layer 30 . The black matrix substrate 10 is arranged between the active element substrate 20 and the backlight module 40, which helps to increase the configuration space of the circuit board (not shown) of the display device 1, thereby reducing the frame size of the display device 1 to obtain a narrow Frame or frameless display device 1 .

The backlight module 40 includes a light source structure 400 and a reflective polarization enhancement film (Dual Brightness Enhancement Film, DBEF) 410 . The light source structure 400 is, for example, an edge-lit backlight, a direct-lit backlight, a mini LED backlight or any other form of backlight. The reflective polarizing brightness enhancement film 410 is located between the light source structure 400 and the black matrix substrate 10 .

The reflective microstructure 131 is located between the black matrix 150 and the backlight module 40 . The reflective microstructure 131 includes a convex surface facing the backlight module 40 and a concave surface facing the black matrix 150 . The light L emitted by the light source structure 400 can be reflected by the reflective microstructure 131 under the black matrix 150 , thereby reducing the probability of the light L being absorbed by the black matrix 150 . In addition, the light L reflected by the reflective microstructure 131 can be reflected again by the reflective polarized brightness enhancement film 410 (or other reflective structures in the backlight module 40 ), thereby enhancing the light L to exit from the opening 152 of the black matrix 150 The probability of black matrix substrate 10.

Based on the above, since the reflective microstructure 131 is located between the black matrix 150 and the backlight module 40 , the brightness of the display device 1 can be improved.

FIG. 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 2 follows the component numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the display device 2 of FIG. 2 and the display device 1 of FIG. 1 is that in the display device 2 of FIG. The layer 140 a overlaps the opening 152 of the black matrix 150 .

Referring to FIG. 2 , the patterned structure 120a is entirely formed on the dielectric structure 110a. The patterned structure 120 a has a groove 121 at a position overlapping the black matrix 150 , but does not have a groove 121 at a position not overlapping the black matrix 150 . The patterned structure 120 a does not have a via hole overlapping the opening 152 .

The reflective layer 130 is disposed on the patterned structure 120 to form a plurality of reflective microstructures 131 . In this embodiment, the reflective layer 130 is formed on the groove 121 . The reflective layer 130 overlaps the black matrix 150 and does not overlap the color conversion element 160 .

In this embodiment, the first buffer layer PV1a and the second buffer layer PV2a extend to the bottom of the opening 152 of the black matrix 150, and part of the first buffer layer PV1a directly contacts with part of the second buffer layer PV2a, but the present invention does not This is the limit.

The protection layer 140 a is formed entirely on the second buffer layer PV2 a, and the second buffer layer PV2 a extends to the lower part of the opening 152 of the black matrix 150 . Both the black matrix 150 and the color conversion element 160 are disposed on the passivation layer 140a.

Based on the above, since the reflective microstructure 131 is located between the black matrix 150 and the backlight module 40 , the brightness of the display device 1 can be improved.

FIG. 3 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 3 uses the component numbers and parts of the content in the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the display device 3 of FIG. 3 and the display device 1 of FIG. 1 is that in the display device 3 of FIG. 3 , the patterned structure 120b of the black matrix substrate 10b, the first buffer layer PV1, the second buffer layer PV2, The layer 130 and the dielectric structure 110 b are located on a side of the first substrate 100 close to the backlight module 40 .

In this embodiment, the black matrix substrate 10b includes a first substrate 100, a patterned structure 120b, a reflective layer 130, a protective layer 140b, a black matrix 150, a color conversion element 160, a first buffer layer PV1 and a second buffer layer PV2.

The black matrix 150 and the color conversion element 160 are disposed on a side of the first substrate 100 facing the liquid crystal layer 30 . The patterned structure 120b and the protective layer 140b are disposed on a side of the first substrate 100 facing the backlight module 40 . The black matrix 150 and the patterned structure 120b are respectively disposed on opposite sides of the first substrate 100 .

The patterned structure 120b is disposed on the first substrate 100 . The patterned structure 120b overlaps the black matrix 150 . In this embodiment, the patterned structure 120b is directly formed on the first substrate 100, but the invention is not limited thereto. In other embodiments, other film layers are included between the patterned structure 120 b and the first substrate 100 .

In this embodiment, the patterned structure 120b includes a plurality of protrusions 121b, and the protrusions 121b are located on a side of the patterned structure 120b facing the backlight module 40 . In this embodiment, the patterned structure 120b includes the through hole 122, and part of the protection layer 140b is located in the through hole 122, but the invention is not limited thereto. In other embodiments, the patterned structure 120 b does not include the through hole 122 , and the patterned structure 120 b completely covers the first substrate 100 . In this embodiment, the through holes 122 of the patterned structure 120 b overlap the openings 152 of the black matrix 150 . In this embodiment, the sidewalls of the through hole 122 are aligned with the sidewalls of the opening 152 , but the invention is not limited thereto. In other embodiments, the sidewalls of the through hole 122 deviate from the sidewalls of the opening 152 .

The reflective layer 130 is disposed on the patterned structure 120 b to form a plurality of reflective microstructures 131 . In this embodiment, the reflective layer 130 is formed on the protrusion 121b. The reflective layer 130 overlaps the black matrix 150 and does not overlap the color conversion element 160 .

In some embodiments, a first buffer layer PV1 is optionally included between the reflective layer 130 and the patterned structure 120b. In some embodiments, the first buffer layer PV1 is configured to enhance the adhesion between the reflective layer 130 and the patterned structure 120b.

The protective layer 140b is located on the reflective layer 130 . The passivation layer 140b includes, for example, a single dielectric layer or multiple dielectric layers. In this embodiment, the passivation layer 140b fills the through hole 122 of the patterned structure 120b and contacts the first substrate 100, but the invention is not limited thereto.

In some embodiments, a second buffer layer PV2 is optionally included between the protective layer 140b and the reflective layer 130 . In some embodiments, the second buffer layer PV2 is configured to enhance the adhesion between the reflective layer 130 and the protective layer 140b.

The first polarizing structure PL1 is disposed between the liquid crystal layer 30 and the backlight module 40 . In this embodiment, the first polarizing structure PL1 is disposed on the protective layer 140b.

Based on the above, since the reflective microstructure 131 is located between the black matrix 150 and the backlight module 40 , the brightness of the display device 3 can be improved.

FIG. 4 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 4 follows the component numbers and partial content of the embodiment in FIG. 3 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the display device 4 of FIG. 4 and the display device 3 of FIG. 3 is that in the display device 4 of FIG. The layer 140c overlaps the opening 152 of the black matrix 150 .

Referring to FIG. 4 , the patterned structure 120 c is formed on the entire surface of the first substrate 100 . The patterned structure 120c has a protrusion 121b at a position overlapping the black matrix 150 , but does not have a protrusion 121b at a position not overlapping the black matrix 150 .

The reflective layer 130 is disposed on the patterned structure 120c to form a plurality of reflective microstructures 131 . In this embodiment, the reflective layer 130 is formed on the protrusion 121b. The reflective layer 130 overlaps the black matrix 150 and does not overlap the color conversion element 160 .

Based on the above, since the reflective microstructure 131 is located between the black matrix 150 and the backlight module 40 , the brightness of the display device 4 can be improved.

FIG. 5 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 5 follows the component numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the display device 5 in FIG. 5 and the display device 1 in FIG. 1 is that in the display device 5 in FIG. 5 , the active device substrate 20 a does not include the second anti-reflection layer.

Please refer to FIG. 5 , in this embodiment, the second anti-reflection layer is not provided on the side of the second conductive layer 250 facing the second substrate 200 .

FIG. 6A is a schematic top view of an active device substrate according to an embodiment of the present invention. The active device substrate may actually include a plurality of sub-pixels in an array. For convenience of illustration, FIG. 6A shows one of the sub-pixels of the active device substrate.

It must be noted here that the active element substrate in any of the embodiments in FIGS. 1 to 5 can be replaced by the active element substrate 20b in FIG. 6A . The black matrix substrate, the liquid crystal layer and the backlight module of any embodiment shown in FIG. 5 are used together. In addition, for the convenience of illustration, FIG. 6A shows the first conductive layer 230, the second anti-reflection layer 240, the second conductive layer 250 and the semiconductor channel layer CH of the active device substrate 20b, and omits other components in the active device substrate 20b. . FIG. 6A also shows the position of the black matrix 150 corresponding to the active device substrate 20b. Fig. 6B is a schematic cross-sectional view along line a-a' of Fig. 6A.

Please refer to FIG. 6A and FIG. 6B , the active device substrate 20 b includes a second substrate 200 , an insulating structure 210 , a first anti-reflection layer 220 , a first conductive layer 230 , a second anti-reflection layer 240 and a second conductive layer 250 .

The second substrate 200 is a transparent substrate. The first anti-reflection layer 220 is located on the second substrate 200 . The first conductive layer 230 is located on the first anti-reflection layer 220 . In this embodiment, the first conductive layer 230 includes scan lines 231 , gate electrodes 232 , first common signal lines 233 , capacitor electrodes 234 and auxiliary electrodes 235 . The scan line 231 and the first common signal line 233 extend along the first direction D1, and the scan line 231 is separated from the first common signal line 233 . The gate electrode 232 is connected to the scan line 231 , and the capacitor electrode 234 is connected to the first common signal line 233 .

In this embodiment, the scan line 231 , the gate electrode 232 , the first common signal line 233 , the capacitor electrode 234 and the auxiliary electrode 235 are all overlapped on the first anti-reflection layer 220 , but the invention is not limited thereto. In other embodiments, the scan line 231 , the gate electrode 232 , the first common signal line 233 , the capacitor electrode 234 and the auxiliary electrode 235 partially overlap the first anti-reflection layer 220 .

The insulating structure 210 is located on the second substrate 200 . The insulating structure 210 is a multilayer structure. In the embodiment of FIG. 6B , the insulating structure 210 includes a first insulating layer 212 and a second insulating layer 214 . The first insulating layer 212 covers the first conductive layer 230 and the first anti-reflection layer 220 . The second insulating layer 214 is located on the first insulating layer 212 .

The second anti-reflection layer 240 and the semiconductor channel layer CH are located on the first insulating layer 212 . In this embodiment, the semiconductor channel layer CH and the second anti-reflection layer 240 are separated from each other. The semiconductor channel layer CH overlaps the gate 232 of the first conductive layer 230 .

In this embodiment, the semiconductor channel layer CH and the second anti-reflection layer 240 belong to the same film layer. For example, the semiconductor channel layer CH and the second anti-reflection layer 240 are deposited on the first insulating layer 212 through the same deposition process. In some embodiments, the semiconductor channel layer CH and the second anti-reflection layer 240 include the same semiconductor material. In some embodiments, the semiconductor channel layer CH and the second anti-reflection layer 240 have different crystallinity, different carrier concentration or different conductivity, but the invention is not limited thereto. In other embodiments, the semiconductor channel layer CH and the second anti-reflection layer 240 include the same material properties.

The second conductive layer 250 is located on the first insulating layer 212 . The first conductive layer 230 is closer to the second substrate 200 than the second conductive layer 250 , and the second conductive layer 250 is closer to the liquid crystal layer than the first conductive layer 230 . In this embodiment, the second conductive layer 250 includes a data line 251 , a source 252 , a drain 253 and a second common signal line 254 . The data line 251 and the second common signal line 254 extend along the second direction D2, and the data line 251 is separated from the second common signal line 254 and the drain 253 . The source 252 is connected to the data line 251 . The semiconductor channel layer CH is electrically connected to the drain 253 and the source 252 . In this embodiment, the gate 232 , the semiconductor channel layer CH, the drain 253 and the source 252 form a thin film transistor TFT. The thin film transistor TFT is electrically connected to the scan line 231 and the data line 251 .

The second common signal line 254 is electrically connected to the auxiliary electrode 235 through the conductive hole TH1. The auxiliary electrode 235 can reduce the resistance-capacitance load (RC loading) of the second common signal line 254 . The conductive hole TH1 is, for example, disposed in the first insulating layer 212 .

In this embodiment, the data line 251 , the source electrode 252 , the drain electrode 253 and the second common signal line 254 partially overlap the second anti-reflection layer 240 . In this embodiment, the second anti-reflection layer 240 is not provided in the area where the first conductive layer 230 overlaps with the second conductive layer 250 .

The second insulating layer 214 is located on the second conductive layer 250 . The pixel electrode PE is disposed on the second insulating layer 214 and electrically connected to the drain electrode 253 through the conductive hole TH2. The conductive hole TH2 is, for example, disposed in the second insulating layer 214 .

Based on the above, the first anti-reflection layer 220 and the second anti-reflection layer 240 are configured to reduce the reflection of light from outside to the active device substrate 20b, thereby reducing the influence of ambient light on the display screen.

FIG. 7 is a schematic cross-sectional view of an active device substrate according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 7 follows the component numbers and part of the content of the embodiment in FIG. 6A and FIG. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The difference between the active device substrate 20c in FIG. 7 and the active device substrate 20b in FIG. 6B is that the second anti-reflection layer 240a of the active device substrate 20c in FIG. 7 is integrated with the semiconductor channel layer CH.

Please refer to FIG. 7 , the semiconductor channel layer CH overlaps the gate 231 of the first conductive layer 250 and is electrically connected to the drain 253 of the second conductive layer 250 and the source 252 of the second conductive layer 250 .

In this embodiment, the semiconductor channel layer CH and the second anti-reflection layer 240a belong to the same film layer. For example, the semiconductor channel layer CH and the second anti-reflection layer 240a are deposited on the first insulating layer 212 through the same deposition process. The semiconductor channel layer CH is integrated with the second anti-reflection layer 240a. In some embodiments, the semiconductor channel layer CH and the second anti-reflection layer 240a include the same semiconductor material. In some embodiments, the semiconductor channel layer CH and the second anti-reflection layer 240a have different crystallinity, different carrier concentration or different conductivity, but the invention is not limited thereto. In other embodiments, the semiconductor channel layer CH and the second anti-reflection layer 240 include the same material properties.

Based on the above, the first anti-reflection layer 220 and the second anti-reflection layer 240a are configured to reduce the reflection of light from outside to the active device substrate 20c, thereby reducing the influence of ambient light on the display screen.

1,2,3,4,5: display device 10, 10a, 10b, 10c: black matrix substrate 20, 20a, 20b, 20c: active component substrate 30: Liquid crystal layer 40:Backlight module 100: first base 110, 110a: Dielectric structures 120, 120a, 120b, 120c: patterned structure 121: Groove 121b: Raised 122, 132, 142: through holes 130: reflective layer 131: Reflective Microstructure 140, 140a, 140b, 140c: protective layer 150: black matrix 152: opening 160: Color conversion element 200: second base 210: Insulation structure 212: the first insulating layer 214: second insulating layer 220: the first anti-reflection layer 230: the first conductive layer 231: Scanning line 232: gate 233: The first shared signal line 234: capacitance electrode 235: Auxiliary electrode 240, 240a: second anti-reflection layer 250: second conductive layer 251: data line 252: source 253: drain 254: The second common signal line 400: light source structure 410: reflective polarized brightness enhancement film CH: semiconductor channel layer D1: the first direction D2: Second direction L: light PV1, PV1a: the first buffer layer PV2, PV2a: second buffer layer PL1: first polarizer structure PL2: second polarizing structure PE: pixel electrode T: Thickness TH1, TH2: conductive holes TFT: thin film transistor W: width

FIG. 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. FIG. 6A is a schematic top view of an active device substrate according to an embodiment of the present invention. Fig. 6B is a schematic cross-sectional view along line a-a' of Fig. 6A. FIG. 7 is a schematic cross-sectional view of an active device substrate according to an embodiment of the present invention.

1: Display device

10: Black matrix substrate

20: Active component substrate

30: Liquid crystal layer

40:Backlight module

100: first base

110: Dielectric structure

120: Patterned structure

121: Groove

122, 132, 142: through holes

130: reflective layer

131: Reflective Microstructure

140: protective layer

150: black matrix

152: opening

160: Color conversion element

200: second base

210: Insulation structure

220: the first anti-reflection layer

230: the first conductive layer

240: second anti-reflection layer

250: second conductive layer

400: light source structure

410: reflective polarized brightness enhancement film

L: light

PV1: the first buffer layer

PV2: Second buffer layer

PL1: first polarizer structure

PL2: second polarizing structure

T: Thickness

W: width

Claims (10)

A display device comprising: A black matrix substrate, including: a black matrix; a patterned structure overlapping the black matrix; and a reflective layer disposed on the patterned structure to form a plurality of reflective microstructures; An active element substrate, superimposed on the black matrix substrate: a liquid crystal layer located between the black matrix substrate and the active element substrate; and A backlight module, wherein the black matrix substrate is located between the active component substrate and the backlight module, and the reflective microstructures are located between the black matrix and the backlight module. The display device as claimed in item 1, wherein the black matrix substrate comprises: a first base; a dielectric structure located on the first substrate, and the patterned structure is disposed on the dielectric structure; a protective layer, located between the black matrix and the reflective layer; a color conversion element located in an opening of the black matrix; and A first polarizing structure is arranged between the liquid crystal layer and the backlight module. The display device as described in claim 2, wherein the black matrix substrate comprises: A buffer layer is located between the protection layer and the reflective layer. The display device as claimed in item 1, wherein the black matrix substrate comprises: A first substrate, wherein the black matrix and the patterned structure are respectively disposed on opposite sides of the first substrate; a protective layer located on the reflective layer; a color conversion element located in an opening of the black matrix; and A first polarizing structure is arranged between the liquid crystal layer and the backlight module. The display device as claimed in item 1, wherein the backlight module comprises: a light source structure; and A reflective polarized brightness enhancement film is located between the light source structure and the black matrix substrate, wherein the reflectance of the reflective microstructures is less than or equal to 100% and greater than or equal to 50% in the mode of excluding specular regular reflection light. The display device as claimed in item 1, wherein the active element substrate comprises: a second base; a first conductive layer located between the second substrate and the liquid crystal layer; a first anti-reflection layer, located between the first conductive layer and the second substrate, and directly in contact with the first conductive layer; a second conductive layer located between the second substrate and the liquid crystal layer, and the first conductive layer is closer to the second substrate than the second conductive layer; A second anti-reflection layer is located between the second conductive layer and the second substrate, and directly contacts the second conductive layer. The display device as claimed in item 6, wherein the active element substrate further comprises: A semiconductor channel layer overlaps a gate of the first conductive layer and is electrically connected to a drain of the second conductive layer and a source of the second conductive layer, wherein the semiconductor channel layer and the second The anti-reflection layer belongs to the same film layer, and the semiconductor channel layer is integrated with the second anti-reflection layer. The display device as claimed in item 6, wherein the active element substrate further comprises: A semiconductor channel layer overlaps a gate of the first conductive layer and is electrically connected to a drain of the second conductive layer and a source of the second conductive layer, wherein the semiconductor channel layer and the second The anti-reflection layer belongs to the same film layer, and the semiconductor channel layer and the second anti-reflection layer are separated from each other. The display device according to claim 8, wherein the second anti-reflection layer is not provided in the area where the first conductive layer overlaps with the second conductive layer. The display device according to claim 6, wherein the material of the first anti-reflection layer includes metal oxide, metal nitride or metal oxynitride, and the material of the second anti-reflection layer includes a semiconductor material.

Images