JP2018097132A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve display performance of a liquid crystal display device by increasing the aperture ratio of the liquid crystal display device.SOLUTION: In the liquid crystal display device, a counter substrate faces a thin film transistor substrate over a liquid crystal layer. In the thin film transistor substrate, a plurality of pixel structures are arranged on the principal surface of the substrate in a matrix form. Each of the plurality of pixel structures has a rectangular planar shape, having a first reflection region, a transmission region and a second reflection region. The first reflection region and the second reflection region reflect the light. The transmission region transmits the light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape. The transmission region is sandwiched between the first reflection region and the second reflection region.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a liquid crystal display device.

a. Application of TFT substrate A thin film transistor substrate (TFT substrate) includes a thin film transistor (TFT) used as a switching device, and is incorporated in an electro-optical device. Examples of the electro-optical device include a liquid crystal display device and a light emitting display device. The liquid crystal display device is a display device using liquid crystal. A light emitting display device is a display device that utilizes light emitting diodes (LEDs). A semiconductor device such as a TFT substrate is characterized by low power consumption and thin thickness. For this reason, semiconductor devices are actively applied to flat panel displays that are flat electro-optical devices.

  The liquid crystal display device is also called a liquid crystal display (LCD). Liquid crystal display devices include simple matrix LCDs and TFT-LCDs. In a TFT-LCD, a TFT is used as a switching device. A TFT-LCD includes a TFT substrate, is superior to a simple matrix LCD in terms of display quality, and is widely used in display products such as mobile computers, notebook personal computers, and televisions.

b Basic Structure of Liquid Crystal Panel The liquid crystal display device includes a liquid crystal panel. The liquid crystal panel includes a liquid crystal cell, a polarizing plate on the front side, and a polarizing plate on the back side. The polarizing plate on the front side is attached to the main surface on the front side of the liquid crystal cell. The back side polarizing plate is attached to the main surface on the back side of the liquid crystal cell. The liquid crystal cell includes a TFT substrate, a color filter substrate (CF substrate), and a liquid crystal layer. The TFT substrate includes a plurality of TFTs arranged in an array. The CF substrate is also called a counter substrate, and includes a plurality of color filters and the like arranged in an array. The liquid crystal layer is sandwiched between the TFT substrate and the CF substrate.

  A TFT substrate provided in a liquid crystal display device that drives a liquid crystal by a vertical electric field includes a plurality of pixel electrodes arranged in an array. A CF substrate provided in a liquid crystal display device that drives liquid crystal by a vertical electric field includes a common electrode. A drive voltage corresponding to the image signal is applied to the plurality of pixel electrodes. The potential of the common electrode is fixed to a common potential that is a constant potential. Therefore, the liquid crystal constituting the liquid crystal layer provided in the liquid crystal display device that drives the liquid crystal by the vertical electric field is driven by the electric field in a direction substantially perpendicular to the main surface of the liquid crystal panel.

c. Transmission type liquid crystal display device, reflection type liquid crystal display device and transflective liquid crystal display device Examples of liquid crystal display devices include a transmission type liquid crystal display device, a reflection type liquid crystal display device and a transflective type liquid crystal display device.

  The transmissive liquid crystal display device includes a backlight in addition to the liquid crystal panel. The backlight faces the main surface on the back side of the liquid crystal panel. The backlight includes a light source. The light source is disposed along the main surface on the back side of the liquid crystal panel or the side surface of the liquid crystal panel. In a transmissive liquid crystal display device, light source light emitted from a light source passes through a liquid crystal panel, and a color image is displayed by display light transmitted through the liquid crystal panel. The transmissive liquid crystal display device has a problem that when the intensity of the ambient light is high, the intensity of the display light is weaker than the intensity of the ambient light and the visibility is lowered. That is, the transmissive liquid crystal display device has a problem that power consumption increases because the intensity of the light source light must be increased in order to improve visibility when the intensity of ambient light is high.

  A liquid crystal panel provided in a reflective liquid crystal display device includes a reflective plate provided on a substrate. In the reflective liquid crystal display device, ambient light is reflected on the surface of the reflector, the reflected light reflected on the surface of the reflector is transmitted through the liquid crystal panel, and a color image is displayed by the display light transmitted through the liquid crystal panel. . The reflective liquid crystal display device has a problem that when the intensity of ambient light is weak, the intensity of display light becomes weak and visibility is lowered.

  In order to solve these problems, transflective liquid crystal display devices have been proposed. Each of the plurality of pixels included in the transflective liquid crystal display device includes a transmissive pixel electrode that transmits light and a reflective pixel electrode that reflects light.

d Structure of TFT Substrate Provided in Transflective Liquid Crystal Display Device Hereinafter, first and second structural examples of the TFT substrate provided in the transflective liquid crystal display device will be described.

  In both the first and second structural examples, the TFT substrate includes a transparent insulating substrate, a gate wiring, a first insulating film, and a source wiring. The gate wiring is disposed on the main surface of the transparent insulating substrate. The first insulating film is disposed on the main surface of the transparent insulating substrate so as to overlap the gate wiring. The source wiring is disposed on the main surface of the transparent insulating substrate so as to overlap the first insulating film. The source wiring intersects with the gate wiring when viewed from the direction perpendicular to the main surface of the transparent insulating substrate. However, the source wiring is perpendicular to the main surface of the transparent insulating substrate from the gate wiring by the first insulating film. Separated in the direction.

  In both the first and second structural examples, the TFT substrate includes a plurality of pixel structures arranged in a matrix on the main surface of the transparent insulating substrate. The gate wiring includes a gate electrode for each of the plurality of pixel structures. The source wiring includes a source electrode for each of the plurality of pixel structures. The TFT substrate further includes a semiconductor film and a drain electrode for each of the plurality of pixel structures. In each of the plurality of pixel structures, a semiconductor film is disposed on the main surface of the transparent insulating substrate so as to overlap the first insulating film, and is opposed to the gate electrode with the first insulating film interposed therebetween. Is in contact with the semiconductor film, and a TFT as a switching element is formed by the gate electrode, the source electrode and the drain electrode, the semiconductor film and the gate insulating film.

  In the first structure example, the TFT substrate further includes an interlayer insulating film, and further includes a transmissive pixel electrode and a reflective pixel electrode for each of the plurality of pixel structures. The interlayer insulating film includes a second insulating film and an organic resin film, and is disposed on the main surface of the transparent insulating substrate so as to overlap the gate wiring, the source wiring, the semiconductor film, and the drain electrode. In each of the plurality of pixel structures, the transmissive pixel electrode is in contact with and electrically connected to the drain electrode via a contact hole formed in the interlayer insulating film. In each of the plurality of pixel structures, the reflective pixel electrode is disposed on the main surface of the transparent insulating substrate so as to overlap the transmissive pixel electrode. The reflective pixel electrode is not separated from the transmissive pixel electrode by an insulating film. The transmissive pixel electrode is a conductive film having a high light transmittance. The reflective pixel electrode is a metal film having a high light reflectance. According to the first structure example, a region where the transmissive pixel electrode is disposed but no reflective pixel electrode is disposed is a transmissive region that transmits light, and a region where the reflective pixel electrode is disposed is a reflective region that reflects light. Become.

  In the second structure example, the TFT substrate further includes a second insulating film, and further includes a transmissive pixel electrode for each of the plurality of pixel structures. The second insulating film is disposed on the main surface of the transparent insulating substrate so as to overlap the gate wiring, the source wiring, the semiconductor film, and the drain electrode. In each of the plurality of pixel structures, the drain electrode extends to a position away from the TFT to become a reflective pixel electrode, and the transmissive pixel electrode contacts the reflective pixel electrode through an opening formed in the second insulating film. And electrically connected to the reflective pixel electrode. The opening overlaps with the reflective pixel electrode when viewed in plan from a direction perpendicular to the main surface of the transparent insulating substrate. The transmissive pixel electrode is a conductive film having high transmittance. The reflective pixel electrode is a conductive film having a high reflectance. According to the second structural example, the region where the transmissive pixel electrode is disposed but the drain electrode which is the reflective pixel electrode is not disposed becomes the transmissive region which transmits light, and the drain electrode which is the reflective pixel electrode is disposed. Becomes a reflection region that reflects light.

  When the second structure example is employed and the first insulating film and the second insulating film do not include the organic resin film, the semi-transmissive structure is used as compared with the case where the first structure example is employed. The process of manufacturing a liquid crystal display device is simplified. The technique described in Patent Document 1 is an example. Hereinafter, the TFT substrate in which the second structure example is adopted and the first insulating film and the second insulating film do not include the organic resin film is referred to as an organic film-less transflective TFT substrate.

e. Thickness of Liquid Crystal Layer In a transflective liquid crystal display device, a structure in which the thickness of the liquid crystal layer in the transmissive region is different from the thickness of the liquid crystal layer in the reflective region may be employed. This structure is realized by providing a step layer on the CF substrate facing the TFT substrate. The thickness of the liquid crystal layer is determined by the distance from the inner main surface of the TFT substrate to the inner main surface of the CF substrate.

  When the structure is adopted, desirably, the transmission region and the reflection region are arranged in a stripe pattern on the TFT substrate, and the steps are continuously arranged in a stripe pattern on the CF substrate. As a result, process failures in the process of manufacturing the transflective liquid crystal display device are less likely to occur, and display defects are less likely to occur in the manufactured transflective liquid crystal display device. The technique described in Patent Document 2 is an example.

  This structure may be employed in an organic film-less transflective TFT substrate, or may be employed in a transflective TFT substrate other than an organic film-less transflective TFT substrate.

f Number of Scanning Lines and Signal Lines Generally, each pixel structure, which is each of a plurality of pixel structures, has one scanning line and one signal line. One scanning line consists of a gate wiring. One signal line consists of a source wiring. However, each pixel structure has two scanning lines, and each pixel structure and a pixel structure adjacent to each pixel structure may share one signal line. In this case, the scale of the scanning line driving circuit is twice that of a general case, but the scale of the signal line driving circuit is ½ times that of a normal case.

  On the other hand, the scale of the scanning line driver circuit is comparable to that of a simple shift register circuit that sequentially turns on and off TFTs, and is relatively small. However, since the signal line driver circuit includes a circuit that converts a digital signal representing an image into an analog signal and temporarily holds it, the scale of the signal line driver circuit is relatively large. Therefore, the scale of the scanning line driver circuit is smaller than the scale of the signal line driver circuit, and the cost of the scanning line driver circuit is lower than the cost of the signal line driver circuit. For this reason, when the scale of the scanning line driving circuit is twice that of a general case and the scale of the signal line driving circuit is ½ times that of a normal case, the entire signal line driving circuit and the scanning line driving circuit are The scale is smaller than in the general case, and the overall cost of the signal line driver circuit and the scanning line driver circuit is lower than in the general case. Therefore, when each pixel structure has two scanning lines and each pixel structure and a pixel structure adjacent to each pixel structure share one signal line, the cost of the liquid crystal display device is reduced. The technique described in Patent Document 3 is an example.

JP-A-2005-292660 JP 2007-264380 A JP 2012-103343 A

  In a liquid crystal display device, it is required to improve the display performance by increasing the aperture ratio that affects the display performance.

  An organic film-less transflective TFT substrate is manufactured at a lower cost than a transflective TFT substrate that is not an organic film-less transflective TFT substrate. However, the organic film-less transflective TFT substrate has a limitation that the pixel electrode and the wiring cannot be overlapped. For this reason, a transflective liquid crystal display device including an organic film-less transflective TFT substrate has a problem that an aperture ratio that affects display performance tends to be low. Therefore, in an organic film-less transflective TFT substrate, it is particularly strongly required to improve the display performance by increasing the aperture ratio that affects the display performance.

  This problem is particularly noticeable when each pixel structure has two scanning lines and each pixel structure and a pixel structure adjacent to each pixel structure share one signal line. Further, when each pixel structure has two scanning lines and each pixel structure and a pixel structure adjacent to each pixel structure share one signal line, display defects are likely to occur.

  The present invention is made to solve this problem. The problem to be solved by the present invention is to increase the aperture ratio of the liquid crystal display device and improve the display performance of the liquid crystal display device.

  In a liquid crystal display device, a counter substrate faces a thin film transistor substrate with a liquid crystal layer interposed therebetween.

  In the thin film transistor substrate, a plurality of pixel structures are arranged in a matrix on the main surface of the substrate. Each pixel structure that is each of the plurality of pixel structures has a rectangular planar shape, and includes a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light. The transmission region transmits light. The first reflective region, the transmissive region, and the second reflective region are arranged in the long side direction of a rectangular planar shape. The transmission region is sandwiched between the first reflection region and the second reflection region.

  According to the present invention, the first reflection region and the second reflection region of the thin film transistor substrate are disposed in the vicinity of one end and the other end of the pixel, respectively. Therefore, light shielding in the vicinity of one end and the other end of the pixel is performed in the thin film transistor substrate by the first reflection region and the second reflection region, respectively, and one end and the other end of the pixel It is no longer necessary to perform light shielding in the vicinity of the counter substrate, and the area occupied by the black matrix performing light shielding in the vicinity of one end and the other end of the pixel is reduced. Therefore, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

  The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

1 is a cross-sectional view illustrating a liquid crystal display device according to Embodiment 1. 2 is a plan view illustrating a thin film transistor substrate and the like provided in the liquid crystal display device of Embodiment 1. FIG. 4 is a plan view illustrating a pixel structure provided in the liquid crystal display device of Embodiment 1. FIG. 3 is a cross-sectional view illustrating a pixel structure provided in the liquid crystal display device of Embodiment 1. FIG. 6 is a plan view illustrating a pixel structure of a second embodiment. FIG. FIG. 6 is a cross-sectional view illustrating a pixel structure of a second embodiment. FIG. 6 is a plan view illustrating a pixel structure of a third embodiment. FIG. 6 is a cross-sectional view illustrating a pixel structure of a third embodiment. 6 is a plan view illustrating a pixel structure of a fourth embodiment. FIG. FIG. 10 is a cross-sectional view illustrating a pixel structure of a fifth embodiment. FIG. 10 is a plan view illustrating a pixel structure according to a sixth embodiment. FIG. 10 is a cross-sectional view illustrating a pixel structure according to a sixth embodiment.

1 Embodiment 1
1.1 Liquid Crystal Display Device The schematic diagram of FIG. 1 is a cross-sectional view illustrating the liquid crystal display device of the first embodiment.

  A liquid crystal display device 1000 illustrated in FIG. 1 is a transflective liquid crystal display device, and includes a liquid crystal panel 1020 and a backlight 1021. The liquid crystal display device 1000 may include components other than these components.

  The backlight 1021 faces one main surface 1040 of the liquid crystal panel 1020.

  When the liquid crystal display device 1000 displays an image, the backlight 1021 emits light source light. The emitted light source light enters one main surface 1040 of the liquid crystal panel 1020, enters the one main surface 1040 of the liquid crystal panel 1020, passes through the liquid crystal panel 1020, passes through the liquid crystal panel 1020, and then passes through the liquid crystal panel 1020. The other main surface 1041 exits. In addition, ambient light is incident on the other main surface 1041 of the liquid crystal panel 1020, is incident on the other main surface 1041 of the liquid crystal panel 1020, is reflected inside the liquid crystal panel 1020, and is reflected inside the liquid crystal panel 1020. Later, the light is emitted from the other main surface 1041 of the liquid crystal panel 1020. Only one of the light source light and the ambient light may enter the liquid crystal panel 1020.

  When the liquid crystal display device 1000 displays an image, an image signal is input to the liquid crystal display device 1000, and the light transmittance of the liquid crystal panel 1020 is controlled in accordance with the input image signal.

  As a result, an image corresponding to the input image signal is displayed on the other main surface 1041 of the liquid crystal panel 1020.

1.2 Liquid Crystal Panel The liquid crystal panel 1020 includes a polarizing plate 1060, a thin film transistor substrate (TFT substrate) 1061, a liquid crystal layer 1062, a counter substrate 1063, and a polarizing plate 1064, as shown in FIG.

  The counter substrate 1063 is also called a color filter substrate (CF substrate) and faces the TFT substrate 1061 with the liquid crystal layer 1062 interposed therebetween. The polarizing plate 1060 is attached to the outer main surface 1080 of the TFT substrate 1061. The polarizing plate 1064 is attached to the outer main surface 1100 of the CF substrate 1063.

  When the liquid crystal display device 1000 displays an image, the light source light sequentially passes through the polarizing plate 1060, the TFT substrate 1061, the liquid crystal layer 1062, the CF substrate 1063, and the polarizing plate 1064. In addition, the ambient light is sequentially transmitted through the polarizing plate 1064, the CF substrate 1063, and the liquid crystal layer 1062, and is sequentially transmitted through the polarizing plate 1064, the CF substrate 1063, and the liquid crystal layer 1062, and then is reflected by the TFT substrate 1061. Then, the liquid crystal layer 1062, the CF substrate 1063, and the polarizing plate 1064 are sequentially transmitted.

  Further, when the liquid crystal display device 1000 displays an image, an electric field applied to the liquid crystal layer 1062 is controlled according to an image signal input to the liquid crystal display device 1000, and the liquid crystal layer 1062 is changed according to the applied electric field. The liquid crystal molecules constituting the liquid crystal molecules are driven in the horizontal direction to control the alignment state of the liquid crystal layer 1062, the polarization state of the light transmitted through the liquid crystal layer 1062 is controlled according to the alignment state of the liquid crystal layer 1062, and the polarization state of the light is controlled. The light transmittance of the liquid crystal panel 1020 is controlled. Thereby, the light transmittance of the liquid crystal panel 1020 is controlled according to the input image signal.

1.3 TFT Substrate The schematic diagram of FIG. 2 is a plan view illustrating a TFT substrate and the like provided in the liquid crystal display device of the first embodiment.

  As shown in FIG. 2, the liquid crystal display device 1000 includes a plurality of integrated circuit chips (IC chips) 1120 and a printed circuit board 1121 in addition to the TFT substrate 1061. The TFT substrate 1061 includes a glass substrate 1140, a plurality of signal lines 1141, a plurality of scanning lines 1142, a plurality of thin film transistors (TFTs) 1143, a plurality of common wirings 1144, a plurality of external wirings 1145, a plurality of terminal electrodes 1146, and a plurality of terminal electrodes. A terminal electrode 1147 is provided. The TFT substrate 1061 includes an alignment film (not shown) in addition to these components. In FIG. 2, only one TFT 1143 included in the plurality of TFTs 1143 is illustrated, only one terminal electrode 1146 included in the plurality of terminal electrodes 1146 is illustrated, and one single electrode included in the plurality of terminal electrodes 1147 is illustrated. Only the terminal electrode 1147 is shown.

  The glass substrate 1140 is a transparent insulating substrate made of glass. The glass substrate 1140 may be replaced with a transparent insulating substrate made of other than glass.

  The plurality of signal lines 1141, the plurality of scanning lines 1142, the plurality of TFTs 1143, the plurality of common wirings 1144, the plurality of external wirings 1145, the plurality of terminal electrodes 1146, and the plurality of terminal electrodes 1147 are arranged on the main surface of the glass substrate 1140. Is done. The plurality of signal lines 1141, the plurality of scanning lines 1142, the plurality of TFTs 1143, and the plurality of common wirings 1144 are arranged in the display region 1160. The plurality of external wirings 1145, the plurality of terminal electrodes 1146, and the plurality of terminal electrodes 1147 are arranged in the frame region 1161.

  The display area 1160 is an area having a rectangular planar shape in which an image is displayed. The frame area 1161 is an area having a frame-like planar shape that is adjacent to the display area 1160 and surrounds the display area 1160. The display area 1160 having a rectangular planar shape may be replaced with a display area having a planar shape other than the rectangular shape. The frame area 1161 having a frame-like plane shape may be replaced with an area having a plane shape other than the frame shape, and a frame area 1161 adjacent to the display area 1160 and surrounding the display area 1160 is adjacent to the display area 1160. The area 1160 may be replaced with an area that does not surround the area 1160.

  The liquid crystal layer 1062 and the alignment film are disposed in the display region 1160. The liquid crystal layer 1062 and the alignment film may protrude from the display region 1160.

  Each of the plurality of signal lines 1141 is linear and extends in the direction Y. The plurality of signal lines 1141 are arranged in a direction X that is perpendicular to the direction Y. Each of the plurality of scanning lines 1142 is linear and extends in the direction X. The plurality of scanning lines 1142 are arranged in the direction Y. Each of the plurality of scanning lines 1142 intersects each of the plurality of signal lines 1141 when viewed in a plan view from a direction perpendicular to the main surface of the glass substrate 1140.

  Pixels are formed in a pixel region 1180 surrounded by two adjacent signal lines 1141 included in the plurality of signal lines 1141 and two adjacent scanning lines 1142 included in the plurality of scanning lines 1142. Therefore, the liquid crystal panel 1020 includes a plurality of pixels arranged in a matrix. The plurality of TFTs 1143 correspond to the plurality of pixels, respectively, and are arranged in a matrix.

  The plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are terminals for external connection. The plurality of terminal electrodes 1147 are arranged closer to the end of the TFT substrate 1061 than the plurality of terminal electrodes 1146. The terminals of the plurality of IC chips 1120 are connected to the surfaces of the plurality of terminal electrodes 1146 via connection media such as bumps and anisotropic conductive films (ACF). Accordingly, a plurality of IC chips 1120 are electrically connected to the plurality of terminal electrodes 1146. The plurality of IC chips 1120 may be replaced with other external members. A printed circuit board 1121 is connected to the surfaces of the plurality of terminal electrodes 1147 through a similar connection medium. Accordingly, the printed circuit board 1121 is electrically connected to the plurality of terminal electrodes 1147. The printed circuit board 1121 may be replaced with another external member.

  The plurality of external wirings 1145 extend from the plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 arranged in the frame region 1161 to the plurality of signal lines 1141 and the plurality of scanning lines 1142 arranged in the display region 1160. The terminal electrode 1146 and the plurality of terminal electrodes 1147 are electrically connected to the plurality of signal lines 1141 and the plurality of scanning lines 1142. At least some of the plurality of external wirings 1145 pass through a region where the plurality of IC chips 1120 are disposed, and extend from the region where the plurality of IC chips 1120 are disposed toward the end of the TFT substrate 1061. To the terminal electrode 1147.

  The plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are electrically connected to end portions of the plurality of external wirings 1145 and provided by the plurality of external wirings 1145 when the plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are not provided. Provide a larger connection area than the connection area to be provided.

  When the liquid crystal display device 1000 displays an image, an image signal input to the liquid crystal display device 1000 is input to the plurality of terminal electrodes 1147 via the printed circuit board 1121, and a drive voltage that reflects the input image signal is applied. The electric field applied to the liquid crystal layer 1062 is controlled in accordance with the transmitted drive voltage. Thereby, the electric field applied to the liquid crystal layer 1062 is controlled according to the input image signal. The transmitted drive voltage is controlled by the IC chip 1120.

1.4 Pixel Structure The liquid crystal panel 1020 has a plurality of pixels arranged in a matrix. For this reason, the TFT substrate 1061 includes a plurality of pixel structures that respectively constitute a plurality of pixels arranged in a matrix. A plurality of pixel structures provided in the TFT substrate 1061 are arranged in a matrix on the main surface of the glass substrate 1140. The CF substrate 1063 includes a plurality of pixel structures that respectively constitute a plurality of pixels. The plurality of pixel structures provided in the CF substrate 1063 are arranged in a matrix on the main surface of the glass substrate provided in the CF substrate 1063.

1.5 Arrangement of First Reflection Area, Transmission Area, and Second Reflection Area The schematic diagram of FIG. 3 is a plan view illustrating a pixel structure provided in the liquid crystal display device of the first embodiment. The schematic diagram of FIG. 4 is a cross-sectional view illustrating a pixel structure provided in the liquid crystal display device of the first embodiment. FIG. 4 illustrates a cross-section at the position of section line AA illustrated in FIG. 3 and 4, the illustration of the alignment film provided on the TFT substrate 1061 is omitted, and the illustration of the alignment film and color material provided on the CF substrate 1063 is omitted.

  A pixel structure 1200 illustrated in each of FIGS. 3 and 4 is each of a plurality of pixel structures provided in the TFT substrate 1061, has a rectangular planar shape, and has an opening 1220. The opening 1220 is used for displaying an image, and includes a first reflection area 1240, a transmission area 1241, and a second reflection area 1242. The first reflection region 1240 and the second reflection region 1242 reflect light. The transmission region 1241 transmits light. When the first reflective region 1240 and the second reflective region 1242 coexist with the transmissive region 1241, the liquid crystal display device 1000 becomes a transflective liquid crystal display device.

  In the vicinity of the planar positions 1260 and 1261 at which one end and the other end of the pixel are arranged, the electric field reflecting the input image signal is not applied to the liquid crystal layer 1062. For this reason, when the light source light passes through the liquid crystal layer 1062 and the light source light passes near the plane positions 1260 and 1261, an image is not properly displayed. Light that hinders proper display of images in this way is called stray light. In the liquid crystal display device 1000, light is blocked in the vicinity of the planar positions 1260 and 1261 in order to suppress the generation of stray light.

  The first reflective region 1240, the transmissive region 1241, and the second reflective region 1242 are arranged in a direction Y that is a long-side direction of a rectangular planar shape. The reflective region is divided into two parts, a first reflective region 1240 and a second reflective region 1242, and the transmissive region 1241 is sandwiched between the first reflective region 1240 and the second reflective region 1242. For this reason, the first reflective region 1240 and the second reflective region 1242 are disposed in the vicinity of the planar positions 1260 and 1261, respectively. Therefore, light shielding in the vicinity of the planar positions 1260 and 1261 is performed on the TFT substrate 1061 by the first reflective region 1240 and the second reflective region 1242, respectively. That is, the first reflective region 1240 and the second reflective region 1242 have the same function as the function of the black matrix 1380 provided in the CF substrate 1063 so as not to generate stray light. This reduces the need for light shielding near the planar positions 1260 and 1261 at the CF substrate 1063, reduces the area occupied by the black matrix 1380 that shields light near the planar positions 1260 and 1261, and reduces the opening 1220. This contributes to a reduction in the area occupied by the black matrix 1380 that causes the failure. Thereby, compared with the case where the transmission region is arranged in the vicinity of the planar position 1261, the opening 1220 is increased, the aperture ratio of the liquid crystal display device 1000 is increased, and the display performance of the liquid crystal display device 1000 is improved.

  The first reflective region 1240 and the second reflective region 1242 are continuous from the transmissive region 1241. For this reason, in the vicinity of the plane position 1262 where the boundary between the first reflection region 1240 and the transmission region 1241 is disposed and the plane position 1263 where the boundary between the second reflection region 1242 and the transmission region 1241 is disposed, the input is performed. An electric field reflecting the image signal is applied to the liquid crystal layer 1062. Accordingly, no stray light is generated in the vicinity of the planar positions 1262 and 1263.

1.6 Arrangement of TFT Substrate Components As shown in FIGS. 3 and 4, the pixel structure 1200 includes a gate electrode 1280, a common electrode 1281, a gate insulating film 1282, a semiconductor film 1283, a source electrode 1284, and a drain electrode 1285. A reflective electrode 1286, an interlayer insulating film 1287, and a pixel electrode 1288. The pixel structure 1200 may include components other than these components.

  The gate electrode 1280, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, and the drain electrode 1285 constitute the TFT 1143. A plurality of source electrodes 1284 provided in each of the plurality of pixel structures 1200 arranged in the direction Y are electrically connected to each other, and one signal arranged over the plurality of pixel structures 1200 arranged in the direction Y. A line 1141 is formed. The plurality of gate electrodes 1280 provided in the plurality of pixel structures 1200 arranged in the direction X are electrically connected to each other, and one scan arranged over the plurality of pixel structures 1200 arranged in the direction X. A line 1142 is formed. Accordingly, the plurality of TFTs 1143 are electrically connected to the plurality of signal lines 1141, the plurality of scanning lines 1142, and the plurality of external wirings 1145, and the plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are connected to the plurality of signal lines 1141. The plurality of scanning lines 1142 and the plurality of external wirings 1145 are electrically connected to the plurality of TFTs 1143. A plurality of common electrodes 1281 provided in each of the plurality of pixel structures 1200 arranged in the direction X are electrically connected to each other and are arranged over the plurality of pixel structures 1200 arranged in the direction X. A wiring 1144 is formed. In addition, the plurality of common wirings 1144 are electrically connected to each other. Thus, the plurality of common electrodes 1281 provided in the plurality of pixel structures 1200 arranged in a matrix are electrically connected to each other.

  The gate electrode 1280, the common electrode 1281, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the reflective electrode 1286, the interlayer insulating film 1287, and the pixel electrode 1288 are disposed in the display region 1160. The TFT 1143 is disposed under the pixel electrode 1288.

  Gate electrode 1280 and common electrode 1281 are disposed on main surface 1300 of glass substrate 1140. The common electrode 1281 is formed in the same layer as the gate electrode 1280 and thus is formed at the same time as the gate electrode 1280. The gate electrode 1280 is disposed in a region where the TFT 1143 is disposed. The common electrode 1281 does not overlap the gate electrode 1280 when viewed in a direction perpendicular to the main surface 1300 of the glass substrate 1140 and is separated from the gate electrode 1280 in a direction parallel to the main surface 1300 of the glass substrate 1140. It is. As a result, the common electrode 1281 is insulated from the gate electrode 1280.

  The gate insulating film 1282 is disposed on the main surface 1300 of the glass substrate 1140 so as to overlap the gate electrode 1280 and the common electrode 1281, and covers the entire gate electrode 1280 and the common electrode 1281. With the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286 disposed over the gate insulating film 1282 are insulated from the gate electrode 1280 and the common electrode 1281.

  The semiconductor film 1283 is disposed on the main surface 1300 of the glass substrate 1140 so as to overlap the gate insulating film 1282. The semiconductor film 1283 has an island shape, and overlaps with the gate electrode 1280 when viewed in a direction perpendicular to the main surface 1300 of the glass substrate 1140 and faces the gate electrode 1280 with the gate insulating film 1282 interposed therebetween. The semiconductor film 1283 includes a channel region 1320, a source region 1321, and a drain region 1322. The source region 1321 and the drain region 1322 sandwich the channel region 1320.

  The source electrode 1284 and the drain electrode 1285 are disposed on the main surface 1300 of the glass substrate 1140 so as to overlap the gate insulating film 1282 and the semiconductor film 1283. The reflective electrode 1286 is disposed on the main surface 1300 of the glass substrate 1140 so as to overlap the gate insulating film 1282. Since the reflective electrode 1286 is disposed in the same layer as the source electrode 1284 and the drain electrode 1285, the reflective electrode 1286 is formed at the same time as the source electrode 1284 and the drain electrode 1285. The source electrode 1284 and the drain electrode 1285 are in contact with the source region 1321 and the drain region 1322 of the semiconductor film 1283, respectively. The reflective electrode 1286 does not overlap the source electrode 1284 and the drain electrode 1285 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140, and the main surface of the glass substrate 1140 from the source electrode 1284 and the drain electrode 1285. Separated in a direction parallel to 1300.

  The interlayer insulating film 1287 is disposed on the main surface 1300 of the glass substrate 1140 so as to overlap the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286, and covers the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286. As a result, the interlayer insulating film 1287 is disposed on the TFT 1143.

  The pixel electrode 1288 is disposed on the main surface 1300 of the glass substrate 1140 so as to overlap the interlayer insulating film 1287. The pixel electrode 1288 overlaps the drain electrode 1285 and the reflective electrode 1286 when viewed in plan from a direction perpendicular to the main surface 1300 of the glass substrate 1140. The pixel electrode 1288 is in contact with the drain electrode 1285 through a contact hole 1340 formed in the interlayer insulating film 1287 and is in contact with the reflective electrode 1286 through a contact hole 1341 formed in the interlayer insulating film 1287. Accordingly, the pixel electrode 1288 is electrically connected to the drain electrode 1285 and the reflective electrode 1286. Accordingly, the potential of the pixel electrode 1288 is the same as the potential of the drain electrode 1285 and the potential of the reflective electrode 1286. The contact hole 1340 enables a pixel contact where the pixel electrode 1288 and the drain electrode 1285 are in contact, and the contact hole 1341 enables a pixel contact where the pixel electrode 1288 and the reflective electrode 1286 are in contact.

  The drain electrode 1285 is disposed in the first reflective region 1240. The reflective electrode 1286 is disposed in the second reflective region 1242. However, the drain electrode 1285 and the reflective electrode 1286 are not disposed in the transmissive region 1241.

  The pixel electrode 1288 is disposed in the opening 1220. Accordingly, the pixel electrode 1288 overlaps with a counter electrode 1382 described later in the opening 1220 when seen in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140.

1.7 Arrangement of Components of CF Substrate A pixel structure 1360 illustrated in FIG. 4 is each of a plurality of pixel structures provided in the CF substrate 1063, and includes a black matrix 1380, a step layer 1381, and a counter electrode 1382.

  The glass substrate 1400 provided in the CF substrate 1063 is a transparent insulating substrate made of glass. The glass substrate 1400 may be replaced with a transparent insulating substrate made of other than glass.

  Black matrix 1380 is arranged on main surface 1420 of glass substrate 1400. An opening 1440 is formed in the black matrix 1380. Opening 1440 overlaps with opening 1220 when viewed in a plan view from a direction perpendicular to main surface 1300 of glass substrate 1140. Therefore, the black matrix 1380 overlaps with the non-opening 1244 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140.

  The step layer 1381 is disposed on the main surface 1420 of the glass substrate 1400 so as to overlap the black matrix 1380. The step layer 1381 is disposed in the first reflective region 1240, the second reflective region 1242, and the non-opening 1244, but is not disposed in the transmissive region 1241. Accordingly, the gap between the inner main surface 1460 of the TFT substrate 1061 and the inner main surface 1480 of the CF substrate 1063 in the transmissive region 1241 is in the first reflective region 1240, the second reflective region 1242, and the non-opening portion 1244. The gap between the inner main surface 1460 of the TFT substrate 1061 and the inner main surface 1480 of the CF substrate 1063 is wider, and the thickness of the liquid crystal layer 1062 in the transmissive region 1241 is the first reflective region 1240 and the second reflective region. It becomes thicker than the thickness of the liquid crystal layer 1062 in 1242 and the transmissive region 1241, and the display performance of the liquid crystal display device 1000 is improved. For example, the thickness of the liquid crystal layer 1062 in the transmissive region 1241 is 4.0 μm, and the thickness of the liquid crystal layer 1062 in the first reflective region 1240, the second reflective region 1242, and the non-opening portion 1244 is 2.0 μm. . Formation of a step by the step layer 1381 provided in the CF substrate 1063 is performed by using a gate insulating film 1282 made of an inorganic material provided in the TFT substrate 1061, an insulating film such as an interlayer insulating film 1287, a gate electrode 1280, a common electrode 1281, and a source electrode 1284. It is easier than forming a step with a metal film such as the drain electrode 1285. For example, the thickness of the liquid crystal layer 1062 in the transmissive region 1241 is 4.0 μm, and the thickness of the liquid crystal layer 1062 in the first reflective region 1240, the second reflective region 1242, and the non-opening portion 1244 is 2.0 μm. The step of 2.0 μm required for the step can be easily formed by the step layer 1381 provided on the CF substrate 1063, but it is not easy to form by the insulating film and the metal film provided on the TFT substrate 1061.

  The grooves 1500 formed by the plurality of step layers 1381 provided in the plurality of pixel structures 1360 arranged in the direction X constitute a single groove that is linearly arranged in the direction X and extends in the direction X. . For this reason, the plurality of step layers 1381 arranged in a matrix form has a stripe shape.

  The counter electrode 1382 is disposed on the main surface 1420 of the glass substrate 1400 so as to overlap the step layer 1381. A plurality of counter electrodes 1382 respectively provided in the plurality of pixel structures 1360 arranged in a matrix are electrically connected to each other.

1.8 Control of Pixel Transmittance When the drive voltage applied to the gate electrode 1280 is on level, the TFT 1143 is applied between the source electrode 1284 and the drain electrode 1285 and applied to the gate electrode 1280. The switching device is a non-conducting state between the source electrode 1284 and the drain electrode 1285 when the driving voltage is off level, and the driving voltage corresponding to the image signal input to the liquid crystal display device 1000 is applied to the pixel electrode 1288. Used to selectively apply. The TFT 1143 turns the liquid crystal display device 1000 into an active matrix liquid crystal display device.

  When the liquid crystal display device 1000 displays an image, a driving voltage corresponding to the image signal input to the liquid crystal display device 1000 is transmitted to the gate electrode 1280 through the scanning line 1142, and the image signal input to the liquid crystal display device 1000 is displayed. The corresponding driving voltage is transmitted to the source electrode 1284 through the signal line 1141. The TFT 1143 transmits the drive voltage transmitted to the source electrode 1284 to the drain electrode 1285 when the drive voltage transmitted to the gate electrode 1280 is on level. As a result, a driving voltage corresponding to the input image signal is transmitted to the pixel electrode 1288 electrically connected to the drain electrode 1285, and between the pixel electrode 1288 and the counter electrode 1382 according to the input image signal. After the voltage difference is controlled, the electric field applied to the liquid crystal molecules in the gap 1520 between the pixel electrode 1288 and the counter electrode 1382 is controlled according to the voltage difference, and after passing through the gap 1520 according to the applied electric field. The polarization state of the light is controlled, and the light transmittance of the pixel is controlled according to the polarization state. Thereby, the light transmittance of the pixel is controlled according to the input image signal.

  By controlling the light transmittance of each of the plurality of pixels in this way, an image is displayed on the liquid crystal display device 1000.

1.9 Material of TFT substrate component Each of the gate electrode 1280, the common electrode 1281, the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286 is made of a conductive material, for example, aluminum (Al), silver (Ag), copper It consists of a metal selected from (Cu), nickel (Ni), neodymium (Nd), molybdenum (Mo), niobium (Nb) and titanium (Ti) or an alloy containing the metal as a main component.

  Each of the drain electrode 1285 and the reflective electrode 1286 is an electrode that reflects light, is also a reflective pixel electrode, and is made of a conductive material having high light reflectivity, preferably aluminum, silver, an alloy containing aluminum as a main component, or It is made of an alloy mainly composed of silver.

  Each of the drain electrode 1285 and the reflective electrode 1286 may be a stacked body including a plurality of layers. In the laminate, the uppermost layer included in the plurality of layers may be made of a conductive material having a high light reflectance, and layers other than the uppermost layer included in the plurality of layers may be formed of a conductive material having a low light reflectance. It is.

  The pixel electrode 1288 is an electrode that transmits light, is also a transmissive pixel electrode, and is made of a conductive material having high light transmittance, such as indium zinc oxide (IZO) or indium tin oxide (ITO).

Each of the gate insulating film 1282 and the interlayer insulating film 1287 is an insulating film that transmits light and is made of an insulating material, for example, silicon oxide (SiO _x ) or silicon nitride (SiN _x ).

  Each of the gate insulating film 1282 and the interlayer insulating film 1287 may be a stacked film including a plurality of films. For example, each of the gate insulating film 1282 and the interlayer insulating film 1287 may be a stacked film including a silicon oxide film and a silicon nitride film.

  The interlayer insulating film 1287 is preferably an inorganic insulating film made of an inorganic material. Generally speaking, an inorganic material that can form the interlayer insulating film 1287 is cheaper than an organic material that can form the interlayer insulating film 1287. Therefore, when the interlayer insulating film 1287 is made of an inorganic material, the liquid crystal display device 1000 is manufactured. Cost decreases. However, if the manufacturing cost of the liquid crystal display device 1000 is within an allowable range, the interlayer insulating film 1287 may be made of an organic material.

  The semiconductor film 1283 is made of a semiconductor material, for example, amorphous silicon, polysilicon, or an oxide semiconductor.

1.10 Overlap of Pixel Electrode and Drain / Reflective Electrode When the pixel electrode 1288 is viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140, as shown in FIGS. It overlaps with the drain electrode 1285 and the reflective electrode 1286, desirably overlaps substantially the entire drain electrode 1285 and the reflective electrode 1286, and more desirably overlaps the entire drain electrode 1285 and the reflective electrode 1286. Accordingly, the drain electrode 1285 and the reflective electrode 1286 are prevented from directly facing the counter electrode 1382 without the pixel electrode 1288 interposed therebetween, and the interlayer insulating film sandwiched between the drain electrode 1285, the reflective electrode 1286 and the counter electrode 1382 is suppressed. A decrease in the electric field applied to the liquid crystal layer 1062 due to the presence of 1287 is suppressed, and a change in display characteristics of the liquid crystal display device 1000 due to the decrease in the electric field is suppressed. In addition, due to the presence of the interlayer insulating film 1287 sandwiched between the drain electrode 1285 and the reflective electrode 1286 and the counter electrode 1382, charges are generated on one main surface 1540 and the other main surface 1541 of the interlayer insulating film 1287. Residuality is suppressed, and display defects such as an afterimage phenomenon due to residual charge are suppressed. Conversely, when the drain electrode 1285 and the reflective electrode 1286 are directly opposed to the counter electrode 1382 without the pixel electrode 1288 interposed therebetween, a voltage difference is generated between the drain electrode 1285, the reflective electrode 1286, and the counter electrode 1382. In this case, an electric field is applied to the interlayer insulating film 1287 sandwiched between the drain electrode 1285 and the reflective electrode 1286 and the counter electrode 1382, the electric field applied to the liquid crystal layer 1062 is reduced, and one main surface 1540 of the interlayer insulating film 1287 is reduced. Charges remain on the upper and other main surfaces 1541. However, when only a small portion of the drain electrode 1285 and the reflective electrode 1286 does not overlap with the pixel electrode 1288, a remarkable display defect does not occur. For this reason, it is allowed that a small part of the drain electrode 1285 and the reflective electrode 1286 does not overlap with the pixel electrode 1288. Therefore, at least one of the drain electrode 1285 and the reflective electrode 1286 may include a portion 1560 that does not overlap with the pixel electrode 1288 when seen in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140.

1.11 Formation of Auxiliary Capacitor The common electrode 1281 overlaps the drain electrode 1285 and the reflective electrode 1286 when viewed in plan from a direction perpendicular to the main surface 1300 of the glass substrate 1140. Therefore, the common electrode 1281 is an auxiliary capacitance electrode that forms an auxiliary capacitance with the drain electrode 1285, and is an auxiliary capacitance electrode that forms an auxiliary capacitance with the reflective electrode 1286. The auxiliary capacitance formed between the common electrode 1281 and the drain electrode 1285 is adjusted by the area occupied by the overlap between the common electrode 1281 and the drain electrode 1285 and the film thickness of the gate insulating film 1282. The auxiliary capacitance formed between the common electrode 1281 and the reflective electrode 1286 is adjusted by the area occupied by the overlap between the common electrode 1281 and the reflective electrode 1286 and the thickness of the gate insulating film 1282.

  In the case where the electric resistance of the liquid crystal layer 1062 is low and it is difficult to maintain the voltage difference between the pixel electrode 1288 and the counter electrode 1382, the auxiliary capacitance formed between the common electrode 1281 and the drain electrode 1285, and the common electrode 1281 and the reflective electrode are reflected. The auxiliary capacitance formed between the electrodes 1286 is increased. Thereby, the voltage holding characteristic indicating the ability to maintain the voltage difference between the pixel electrode 1288 and the counter electrode 1382 is improved, and the display characteristic of the liquid crystal display device 1000 is improved.

1.12 Planar Shape of Common Electrode The common electrode 1281 includes a first portion 1580, a second portion 1581, and a third portion 1582 as illustrated in FIG. First portion 1580, second portion 1581 and third portion 1582 are arranged in direction X.

  The first portion 1580 is disposed between the second portion 1581 and the linear portion 1700 of the source electrode 1284 along the linear portion 1700 extending in the direction Y of the source electrode 1284. The distance from the first portion 1580 to the gate electrode 1280 is shorter than the distance from the second portion 1581 to the gate electrode 1280.

  The third portion 1582 extends along the linear portion 1700 of the source electrode 1284 included in the pixel structure adjacent to the pixel structure 1200, and the third portion 1582 includes the source electrode 1284 included in the pixel structure adjacent to the second portion 1581 and the pixel structure 1200. It arrange | positions between the linear parts 1700. FIG. The distance from the third portion 1582 to the gate electrode 1280 is shorter than the distance from the second portion 1581 to the gate electrode 1280.

  Accordingly, since the common electrode 1281 is brought close to the gate electrode 1280 in the vicinity of the linear portion 1700 of the source electrode 1284, light leakage in the vicinity of the linear portion 1700 of the source electrode 1284 is suppressed by the common electrode 1281. Further, since the common electrode 1281 is moved away from the gate electrode 1280 except in the vicinity of the linear portion 1700 of the source electrode 1284, occurrence of a short circuit failure in which the common electrode 1281 is short-circuited with the gate electrode 1280 is suppressed. Suppression of the occurrence of short circuit failure is particularly important when the common electrode 1281 is formed at the same time as the gate electrode 1280 in order to reduce the steps necessary for manufacturing the liquid crystal display device 1000. This is because when the common electrode 1281 is formed at the same time as the gate electrode 1280, the risk of occurrence of a short circuit failure increases when the number of portions where the common electrode 1281 approaches the gate electrode 1280 increases.

  A hollow portion 1600 is formed at the center of the common electrode 1281. The hollow portion 1600 is formed in the transmission region 1241. Thereby, the aperture ratio of the transmission region 1241 is improved.

  The common electrode 1281 has the same planar shape as a combined character obtained by combining two “H” characters arranged in the vertical direction.

1.13 Relationship between Common Electrode and Boundary Pixel structure 1200 and one pixel structure adjacent to pixel structure 1200 have a boundary 1620 extending in direction Y, as illustrated in FIGS. Third portion 1582 extends along boundary 1620 and contacts boundary 1620. As a result, light shielding in the vicinity of the boundary 1620 is performed by the third portion 1582 in the TFT substrate 1061, and the aperture ratio is improved in the direction X. The third portion 1582 contacts the main part of the boundary 1620 that does not contact the gate electrode 1280, but is separated from the gate electrode 1280.

  The pixel structure 1200 and the other pixel structure adjacent to the pixel structure 1200 have a boundary 1621 extending in the direction Y. The common electrode 1281 may include a portion 1720 extending along the boundary 1621 and in contact with the boundary 1621 below the source electrode 1284. Thereby, light shielding in the vicinity of the boundary 1621 is performed by the portion 1720 in the TFT substrate 1061, and the aperture ratio is improved in the direction X. The portion 1720 preferably contacts the main portion of the boundary 1621 that does not contact the gate electrode 1280, but is separated from the gate electrode 1280.

1.14 Timing of forming semiconductor film, source electrode, drain electrode, and reflective electrode The semiconductor film 1283, the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286 are formed independently of each other.

  It is allowed that the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286 are not formed independently of each other. In the case where the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286 are not formed independently of each other, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, and the reflective electrode 1286 are subjected to photoresist after the continuous formation step. The film is formed in a single photoengraving process using a process in which the finished film thickness is two steps.

2 Embodiment 2
The second embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

  The main difference between the first embodiment and the second embodiment is that, in the first embodiment, only the reflective electrode 1286 that does not overlap with the gate electrode 1280 is provided in each pixel structure 1200, but in the second embodiment, A reflective electrode that does not overlap with the gate electrode and a reflective electrode that overlaps the gate electrode are provided in each pixel structure, and a reflective electrode that overlaps the gate electrode provided in the pixel structure adjacent to each pixel structure overlaps with the gate electrode provided in each pixel structure. It is in a point continuous from the reflection electrode that does not become.

  The configuration employed in the other embodiments may be employed in the second embodiment within a range that does not hinder the adoption of the configuration that causes the main difference.

  The schematic diagram of FIG. 5 is a plan view illustrating the pixel structure of the second embodiment. The schematic diagram of FIG. 6 is a cross-sectional view illustrating the pixel structure of the second embodiment. 6 illustrates a cross-section at the position of the section line BB illustrated in FIG. 5 and 6, illustration of the alignment film provided on the TFT substrate is omitted, and illustration of the alignment film and color material provided on the CF substrate is omitted.

  The pixel structure 2200 of the second embodiment illustrated in FIGS. 5 and 6 has an opening 2220. The opening 2220 includes a first reflection region 2240, a transmission region 2241, and a second reflection region 2242. The opening 2220, the first reflective region 2240, the transmissive region 2241, and the second reflective region 2242 are the opening 1220, the first reflective region 1240, the transmissive region 1241, and the second reflective region 1242 of the pixel structure 1200, respectively. May have the same technical characteristics as

  The pixel structure 2200 includes a gate electrode 2280, a common electrode 2281, a gate insulating film 2282, a semiconductor film 2283, a source electrode 2284, a drain electrode 2285, a reflective electrode 2286, an interlayer insulating film 2287 and a pixel structure 2200, as shown in FIGS. A pixel electrode 2288 is provided. The gate electrode 2280, the common electrode 2281, the gate insulating film 2282, the semiconductor film 2283, the source electrode 2284, the drain electrode 2285, the reflective electrode 2286, the interlayer insulating film 2287, and the pixel electrode 2288 are respectively included in the pixel structure 1200. The common electrode 1281, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the reflective electrode 1286, the interlayer insulating film 1287, and the pixel electrode 1288 can have the same technical features.

  In the second embodiment, as illustrated in FIGS. 5 and 6, the opening 2220 further includes a third reflective region 2243, and the pixel structure 2200 further includes a reflective electrode 2289. The reflective electrode 2289 is disposed in the third reflective region 2243 and overlaps the gate electrode 2280 when viewed in a plan view from a direction perpendicular to the main surface 2300 of the glass substrate 2140. The reflective electrode 2289 provided in the pixel structure 2201 adjacent to the pixel structure 2200 is continuous from the reflective electrode 2286 provided in the pixel structure 2200. A third reflective region 2243 included in the pixel structure 2201 adjacent to the pixel structure 2200 is continuous from the second reflective region 242 included in the pixel structure 2200.

  In the cross section illustrated in FIG. 6, the pixel electrode 2288 does not overlap the gate electrode 2280. However, the pixel electrode 2288 may be replaced with a pixel electrode that overlaps the gate electrode 2280 in the cross section shown in FIG.

  According to the second embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

  Further, according to Embodiment 2, the opening 2220 includes the third reflection region 2243 in addition to the first reflection region 2240, the transmission region 2241, and the second reflection region 2242, and the area occupied by the reflection region is large. To increase.

  Furthermore, according to Embodiment 2, the reflective electrode 2289 overlaps with the gate electrode 2280 when seen in a plan view from a direction perpendicular to the main surface 2300 of the glass substrate 2140, and between the reflective electrode 2289 and the gate electrode 2280. An auxiliary capacity is formed, and the auxiliary capacity increases.

3 Embodiment 3
The third embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

  The main difference between the first embodiment and the third embodiment is that light is reflected by the reflective electrode 1286 in the second reflective region 1242 in the first embodiment, but in the third embodiment, the second difference is the second. In this reflection region, light is reflected by the common electrode.

  The configuration employed in the other embodiments may be employed in the third embodiment within a range that does not hinder the adoption of the configuration that causes the main difference.

  The schematic diagram of FIG. 7 is a plan view illustrating the pixel structure of the third embodiment. The schematic diagram of FIG. 8 is a cross-sectional view illustrating the pixel structure of the third embodiment. FIG. 8 illustrates a cross-section at the position of section line CC shown in FIG. 7 and 8, the illustration of the alignment film provided on the TFT substrate is omitted, and the illustration of the alignment film and color material provided on the CF substrate is omitted.

  The pixel structure 3200 of the third embodiment illustrated in each of FIGS. 7 and 8 has an opening 3220. The opening 3220 has a first reflective region 3240, a transmissive region 3241, and a second reflective region 3242. The opening 3220, the first reflective region 3240, the transmissive region 3241, and the second reflective region 3242 are the opening 1220, the first reflective region 1240, the transmissive region 1241, and the second reflective region 1242 of the pixel structure 1200, respectively. May have the same technical characteristics as

  7 and 8, the pixel structure 3200 includes a gate electrode 3280, a common electrode 3281, a gate insulating film 3282, a semiconductor film 3283, a source electrode 3284, a drain electrode 3285, an interlayer insulating film 3287, and a pixel electrode 3288. Prepare. A gate electrode 3280, a common electrode 3281, a gate insulating film 3282, a semiconductor film 3283, a source electrode 3284, a drain electrode 3285, an interlayer insulating film 3287, and a pixel electrode 3288 are a gate electrode 1280, a common electrode 1281, and a pixel electrode 3281 provided in the pixel structure 1200, respectively. The gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the interlayer insulating film 1287, and the pixel electrode 1288 can have the same technical characteristics.

  In the third embodiment, as shown in FIGS. 7 and 8, the pixel structure 3200 does not include a reflective electrode corresponding to the reflective electrode 1286, and a contact hole corresponding to the contact hole 1341 is formed in the interlayer insulating film 3287. Instead, the common electrode 3281 is disposed in the second reflection region 3242 and serves as an electrode that reflects light. Therefore, the common electrode 3281 has a function similar to that of the reflective electrode 1286. An auxiliary capacitor is formed between the common electrode 3281 and the pixel electrode 3288.

  The common electrode 3281 is an electrode that reflects light, is also a reflective pixel electrode, and is made of a conductive material having high light reflectivity. Desirably, aluminum, silver, an alloy containing aluminum as a main component, or silver as a main component is used. Made of alloy. The common electrode 3281 may be made of a metal selected from copper, nickel, neodymium, molybdenum, niobium, and titanium or an alloy containing the metal as a main component.

  The common electrode 3281 may be a stacked body including a plurality of layers. In the laminate, the uppermost layer included in the plurality of layers may be made of a conductive material having a high light reflectance, and layers other than the uppermost layer included in the plurality of layers may be formed of a conductive material having a low light reflectance. It is.

  In Embodiment Mode 3, an electric field generated by a voltage difference between the pixel electrode 3288 and the counter electrode 1382 is applied to the liquid crystal layer 1062.

  According to the third embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

  Further, according to the third embodiment, there is no contact structure in which the pixel electrode 3288 is brought into contact with the reflective electrode, and process defects in the process of manufacturing the liquid crystal display device are less likely to occur.

4 Embodiment 4
The fourth embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

  The main difference between the first embodiment and the fourth embodiment is that each pixel structure 1200 includes one gate electrode 1280 and one source electrode 1284 in the first embodiment. Although one scanning line 1142 and one source electrode 1284 constitute one signal line 1141, in Embodiment Mode 4, each pixel structure includes two gate electrodes and one source electrode. Provided, each of the two gate electrodes constitutes two scanning lines, one source electrode provided in each pixel structure and one source electrode provided in a pixel structure adjacent to each pixel structure. This is in the construction of a signal line.

  The configuration employed in the other embodiments may be employed in the fourth embodiment within a range that does not hinder the adoption of the configuration that causes the main difference.

  The schematic diagram of FIG. 9 is a plan view illustrating the pixel structure of the fourth embodiment.

  The pixel structure 4200 of Embodiment 4 illustrated in FIG. 9 has an opening 4220. The opening 4220 has a first reflective region 4240, a transmissive region 4241, and a second reflective region 4242. The opening 4220, the first reflective region 4240, the transmissive region 4241, and the second reflective region 4242 are the opening 1220, the first reflective region 1240, the transmissive region 1241, and the second reflective region 1242, respectively, of the pixel structure 1200. May have the same technical characteristics as

  The pixel structure 4200 includes a gate electrode 4280, a common electrode 4281, a semiconductor film 4283, a source electrode 4284, a drain electrode 4285, a reflective electrode 4286, and a pixel electrode 4288, as shown in FIG. The pixel structure 4200 also includes a gate insulating film and an interlayer insulating film not shown. The gate electrode 4280, the common electrode 4281, the gate insulating film, the semiconductor film 4283, the source electrode 4284, the drain electrode 4285, the reflective electrode 4286, the interlayer insulating film, and the pixel electrode 4288 are the gate electrode 1280 and the common electrode provided in the pixel structure 1200, respectively. 1281, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the reflective electrode 1286, the interlayer insulating film 1287, and the pixel electrode 1288 can have the same technical characteristics.

  In the fourth embodiment, as illustrated in FIG. 9, the pixel structure 4200 further includes a gate electrode 4290. Gate electrode 4290 is separated from gate electrode 4280 in direction Y.

  The pixel structure 4200 and the pixel structure 4202 adjacent to the pixel structure 4200 are arranged in the direction X.

  Each of the gate electrode 4280 included in the pixel structure 4200 and the gate electrode 4290 included in the pixel structure 4202 extends in the direction X. The gate electrode 4280 included in the pixel structure 4200 and the gate electrode 4290 included in the pixel structure 4202 are arranged in the direction X. The gate electrode 4280 included in the pixel structure 4200 is continuous with the gate electrode 4290 included in the pixel structure 4202 and is electrically connected to the gate electrode 4290 included in the pixel structure 4202 to form one scanning line 4148.

  Each of the gate electrode 4290 included in the pixel structure 4200 and the gate electrode 4280 included in the pixel structure 4202 extends in the direction X. The gate electrode 4290 included in the pixel structure 4200 and the gate electrode 4280 included in the pixel structure 4202 are arranged in the direction X. A gate electrode 4290 included in the pixel structure 4200 is continuous from the gate electrode 4280 included in the pixel structure 4202 and is electrically connected to the gate electrode 4280 included in the pixel structure 4202 to form one scanning line 4149.

  Accordingly, the pixel structure 4200 has two scanning lines 4148 and 4149. Two scan lines 4148 and 4149 pass through the pixel structure 4200.

  Each of the source electrode 4284 included in the pixel structure 4200 and the source electrode 4284 included in the pixel structure 4202 extends in the direction Y. The source electrode 4284 included in the pixel structure 4200 and the source electrode 4284 included in the pixel structure 4202 are arranged in the direction X. The source electrode 4284 included in the pixel structure 4200 is disposed along the source electrode 4284 included in the pixel structure 4202, and is electrically connected to the source electrode 4284 included in the pixel structure 4202, and the source electrode included in the pixel structure 4202 is provided. One signal line 4150 is configured together with 4284.

  Accordingly, the pixel structure 4200 and the pixel structure 4202 share one signal line 4150. One signal line 4150 passes through an aggregate including the pixel structure 4200 and the pixel structure 4202.

  Therefore, in the fourth embodiment, the number of scanning lines is doubled and the number of signal lines is halved compared to the first embodiment.

  The plurality of transmissive regions 4241 respectively provided in the plurality of pixel structures 4200 arranged in the direction X are linearly arranged in the direction X. For this reason, the groove formed by the plurality of step layers provided in the plurality of pixel structures 4200 arranged in the direction X constitutes one groove extending in the direction X. For this reason, the plurality of stepped layers arranged in a matrix form has a stripe shape. Such a step layer is easily disposed. Further, according to such a step layer, a region where the alignment state of the liquid crystal layer is disturbed due to the presence of the step layer is suppressed to a minimum.

  According to the fourth embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

  Moreover, according to Embodiment 4, the manufacturing cost of a liquid crystal display device falls. This is because integrated circuits (ICs) that drive signal lines are relatively expensive to handle analog voltages, and it is sufficient that ICs that drive scan lines have simple circuits. This is because the cost of the IC for driving the signal lines and the scanning lines is reduced when the number of scanning lines is doubled and the number of signal lines is halved. Since the IC for driving the scanning line can be formed on the TFT substrate together with the TFT, the wiring, and the like, it is easy to reduce the cost.

5 Embodiment 5
The fifth embodiment relates to a pixel structure that replaces the pixel structure 1360 included in the liquid crystal display device 1000 of the first embodiment.

  The main difference between the first embodiment and the fifth embodiment is that, in the first embodiment, the pixel structure 1360 is provided in the transflective liquid crystal display device, and the first reflective region 1240 and the second reflective region 1242 are shielded. However, in Embodiment Mode 5, the pixel structure is provided in the transmissive liquid crystal display device, and the first reflective region 1240 and the second reflective region 1242 are shielded from light.

  The configuration employed in the other embodiments may be employed in the fifth embodiment within a range that does not hinder the adoption of the configuration that causes the main difference.

  The schematic diagram of FIG. 10 is a cross-sectional view illustrating the pixel structure of the fifth embodiment.

  The pixel structure 5360 of the fifth embodiment illustrated in FIG. 10 includes a black matrix 5380.

  An opening 5440 is formed in the black matrix 5380. The opening 5440 overlaps the transmission region 1241 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. The black matrix 5380 overlaps the first reflective region 1240 and the second reflective region 1241 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. Accordingly, the first reflective region 1240 and the second reflective region 1241 are shielded from light by the black matrix 5380, the reflective function is lost, and the liquid crystal display device including the pixel structure 5360 of Embodiment 5 is changed to the transmissive liquid crystal display device. Become. As long as the main parts of the first reflection area 1240 and the second reflection area 1241 are shielded from light by the black matrix 5380, a small part of the first reflection area 1240 and the second reflection area 1241 overlaps with the opening 5440. Is also allowed.

  The pixel structure 5360 may not include a step layer. In a liquid crystal display device including the pixel structure 5360, only the thickness of the liquid crystal layer in the transmissive region 1241 needs to be adjusted. Therefore, a component for adjusting the thickness of the liquid crystal layer can be arranged at an arbitrary position. It is.

  According to the fifth embodiment, the structures of the transflective liquid crystal display device and the transmissive liquid crystal display device are shared, and the transflective liquid crystal display device and the transmissive liquid crystal display device are designed by the same method, and the transflective liquid crystal The cost required for designing the display device and the transmissive liquid crystal display device is reduced. Further, the transflective liquid crystal display device and the transmissive liquid crystal display device are manufactured by the same method, and management at the time of manufacture becomes easy.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

6 Embodiment 6
The sixth embodiment relates to a pixel structure that replaces the pixel structure 1200 included in the liquid crystal display device 1000 of the first embodiment.

  The main difference between the first embodiment and the sixth embodiment is that light is reflected by the drain electrode 1285 in the first reflection region 1240 in the first embodiment, but in the sixth embodiment, the first difference is the first. In this reflection region, light is reflected by the drain electrode and the common electrode.

  The configuration employed in the other embodiments may be employed in the sixth embodiment within a range that does not hinder the adoption of the configuration that causes the main difference.

  The schematic diagram of FIG. 11 is a plan view illustrating the pixel structure of the sixth embodiment. The schematic diagram of FIG. 12 is a cross-sectional view illustrating the pixel structure of the sixth embodiment.

  A pixel structure 6200 of the sixth embodiment illustrated in FIGS. 11 and 12 has an opening 6220. The opening 6220 has a first reflective region 6240, a transmissive region 6241, and a second reflective region 6242. The opening 6220, the first reflective region 6240, the transmissive region 6241, and the second reflective region 6242 are the opening 1220, the first reflective region 1240, the transmissive region 1241, and the second reflective region 1242 of the pixel structure 1200, respectively. May have the same technical characteristics as

  The pixel structure 6200 includes a gate electrode 6280, a common electrode 6281, a gate insulating film 6282, a semiconductor film 6283, a source electrode 6284, a drain electrode 6285, an interlayer insulating film 6287, a pixel electrode 6288, as shown in FIGS. A gate electrode 6290 is provided. The gate electrode 6280, the common electrode 6281, the gate insulating film 6282, the semiconductor film 6283, the source electrode 6284, the drain electrode 6285, the interlayer insulating film 6287, and the pixel electrode 6288 are respectively a gate electrode 1280, a common electrode 1281, and a pixel electrode 6281 provided in the pixel structure 1200. The gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the interlayer insulating film 1287, and the pixel electrode 1288 can have the same technical characteristics.

  In the sixth embodiment, as shown in FIGS. 11 and 12, the pixel structure 6200 is not provided with a reflective electrode corresponding to the reflective electrode 6286, and a contact hole corresponding to the contact hole 1341 is formed in the interlayer insulating film 6287. First, the common electrode 6281 is disposed in the second reflection region 6242 and becomes an electrode that reflects light. Therefore, the common electrode 6281 has a function similar to that of the reflective electrode 1286. A storage capacitor is formed between the common electrode 6281 and the pixel electrode 6288.

  In addition, in the sixth embodiment, as illustrated in FIGS. 11 and 12, the drain electrode 6285 is disposed in the first partial region 6500 of the first reflective region 6240, and the common electrode 6281 is the second reflective region. In addition to the region 6242, the second partial region 6501 of the first reflective region 6240 is disposed. Each of the first partial region 6500 and the second partial region 6501 occupies a part of the first reflective region 6240. The second partial region 6501 has a portion that does not overlap with the first partial region 6500. Thereby, in the sixth embodiment, light is reflected by the drain electrode 6285 and the common electrode 6281 in the first reflection region 6240.

  The common electrode 6281 is an electrode that reflects light, is also a reflective pixel electrode, and is made of a conductive material having high light reflectivity. Desirably, aluminum, silver, an alloy containing aluminum as a main component, or silver as a main component is used. Made of alloy. The common electrode 6281 may be made of a metal selected from copper, nickel, neodymium, molybdenum, niobium and titanium or an alloy containing the metal as a main component.

  The common electrode 6281 may be a stacked body including a plurality of layers. In the laminate, the uppermost layer included in the plurality of layers may be made of a conductive material having a high light reflectance, and layers other than the uppermost layer included in the plurality of layers may be formed of a conductive material having a low light reflectance. It is.

  According to the sixth embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

  Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that countless variations that are not illustrated can be envisaged without departing from the scope of the present invention.

  1000 Liquid crystal display device, 1061 Thin film transistor substrate (TFT substrate), 1062 Liquid crystal layer, 1063 Counter substrate (CF substrate), 1141, 4150 Signal line, 1142, 4148, 4149 Scan line, 1143 TFT, 1144 Common wiring, 1200, 2200 , 2201, 3200, 4200, 4202, 6200 Pixel structure, 1240, 2240, 3240, 4240, 6240 First reflection region, 1241, 241, 3241, 4241, 6241 Transmission region, 1242, 2242, 3242, 4242, 6242 First 2 reflective region, 2243 3rd reflective region, 1280, 2280, 3280, 4280, 4290 Gate electrode, 1281, 2281, 3281, 4281, 6281 Common electrode, 1282, 2282, 3282, 282 Gate insulating film, 1283, 2283, 3283, 4283, 6283 Semiconductor film, 1284, 2284, 3284, 4284, 6284 Source electrode, 1285, 2285, 3285, 4285, 6285 Drain electrode, 1286, 2286, 2289, 4286, 6286 Reflective electrode, 1287, 2287, 3287, 6287 Interlayer insulating film, 1288, 2288, 3288, 4288, 6288 Pixel electrode, 1340, 1341 Contact hole, 1580 First part, 1581 Second part, 1582 Third part, 5380 Black matrix.

Claims (14)

A substrate and a plurality of pixel structures, wherein the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each of the plurality of pixel structures is rectangular And has a first reflection area, a transmission area, and a second reflection area, the first reflection area and the second reflection area reflect light, and the transmission area transmits light. The first reflection region, the transmission region, and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is formed in the first reflection region and the second reflection region. A thin film transistor substrate sandwiched between,
A liquid crystal layer;
A counter substrate facing the thin film transistor substrate across the liquid crystal layer;
A liquid crystal display device comprising: Each of the pixel structures is
A gate electrode disposed on the main surface;
A gate insulating film disposed on the main surface so as to overlap the gate electrode;
A semiconductor film disposed on the main surface overlying the gate insulating film and facing the gate electrode with the gate insulating film interposed therebetween;
A source electrode disposed on the main surface and in contact with the semiconductor film;
A thin film transistor is disposed on the main surface, is in contact with the semiconductor film, and together with the gate electrode, the source electrode, the gate insulating film, and the semiconductor film, is disposed in the first reflective region, and emits light. A reflective drain electrode;
An interlayer insulating film disposed on the main surface overlying the source electrode and the drain electrode, and a contact hole is formed;
A pixel electrode disposed on the main surface overlying the interlayer insulating film, contacting the drain electrode via the contact hole, and transmitting light;
An electrode disposed on the main surface, disposed in the second reflective region, and reflecting light;
A liquid crystal display device according to claim 1. The contact hole is a first contact hole;
A second contact hole is formed in the interlayer insulating film;
The electrode that reflects light is a reflective electrode disposed in the same layer as the drain electrode,
The liquid crystal display device according to claim 2, wherein the pixel electrode is in contact with the reflective electrode through the second contact hole. The reflective electrode is a first reflective electrode;
Each of the pixel structures further includes a second reflective electrode that overlaps the gate electrode when viewed in plan from a direction perpendicular to the main surface,
4. The liquid crystal display device according to claim 3, wherein the second reflective electrode provided in the pixel structure adjacent to each pixel structure is continuous from the first reflective electrode provided in each pixel structure. The electrode that reflects light is a common electrode arranged in the same layer as the gate electrode,
The liquid crystal display device according to claim 2, wherein the plurality of common electrodes respectively provided in the plurality of pixel structures are electrically connected to each other. The electrode that reflects light is a common electrode arranged in the same layer as the gate electrode,
The plurality of common electrodes respectively provided in the plurality of pixel structures are electrically connected to each other,
The drain electrode is disposed in a first partial region occupying a part of the first reflective region;
The said common electrode is arrange | positioned in the 2nd partial area which occupies a part of said 1st reflective area | region which has a part which does not overlap with a said 1st partial area | region in addition to a said 2nd reflective area | region. 2. Liquid crystal display device. 7. The liquid crystal display device according to claim 2, wherein each of the drain electrode and the electrode that reflects light is made of aluminum, silver, an alloy containing aluminum as a main component, or an alloy containing silver as a main component. The source electrode provided in each pixel structure is disposed along the source electrode provided in the pixel structure adjacent to each pixel structure, and one signal is provided together with the source electrode provided in the pixel structure adjacent to each pixel structure. Composing a line
The gate electrode is a first gate electrode;
Each of the pixel structures further includes a second gate electrode,
The first gate electrode constitutes a first scanning line,
The liquid crystal display device according to claim 2, wherein the second gate electrode constitutes a second single scanning line. Each of the pixel structures is
A storage capacitor is formed between the drain electrode and a first portion and a second portion, and the second portion is disposed along the source electrode between the first portion and the source electrode. The liquid crystal display device according to claim 2, further comprising a storage capacitor electrode having a distance from the second portion to the gate electrode shorter than a distance from the first portion to the gate electrode. The auxiliary capacitance electrode further includes a third portion,
The third portion is disposed along a source electrode provided in a pixel structure adjacent to each pixel structure and between the second portion and a source electrode provided in a pixel structure adjacent to each pixel structure. ,
The liquid crystal display device according to claim 9, wherein a distance from the third portion to the gate electrode is shorter than a distance from the second portion to the gate electrode. The liquid crystal display device according to claim 2, wherein the pixel electrode overlaps the drain electrode and the electrode that reflects the light when viewed in a plan view from a direction perpendicular to the main surface. 12. The liquid crystal according to claim 2, wherein at least one of the drain electrode and the electrode that reflects the light includes a portion that does not overlap the pixel electrode when viewed in a plan view from a direction perpendicular to the main surface. Display device. Each of the pixel structures further includes a common electrode,
The plurality of common electrodes respectively provided in the plurality of pixel structures are electrically connected to each other,
Each pixel structure and a pixel structure adjacent to each pixel structure have a boundary extending in the long side direction;
The liquid crystal display device according to claim 2, wherein the common electrode includes a portion extending along the boundary and in contact with the boundary. The counter substrate is
When viewed in a plan view from a direction perpendicular to the main surface, an opening is formed that overlaps the transmission region. When viewed in a plan view from a direction perpendicular to the main surface, the first reflection region and the first reflection region are formed. The liquid crystal display device according to claim 1, further comprising a black matrix that overlaps with the two reflection regions.

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