TWI788363B - 基板加熱裝置、基板處理系統及基板加熱方法 - Google Patents

基板加熱裝置、基板處理系統及基板加熱方法 Download PDF

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Publication number
TWI788363B
TWI788363B TW107119608A TW107119608A TWI788363B TW I788363 B TWI788363 B TW I788363B TW 107119608 A TW107119608 A TW 107119608A TW 107119608 A TW107119608 A TW 107119608A TW I788363 B TWI788363 B TW I788363B
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TW
Taiwan
Prior art keywords
substrate
heating
pressure
unit
heating plate
Prior art date
Application number
TW107119608A
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English (en)
Chinese (zh)
Other versions
TW201920892A (zh
Inventor
加藤茂
細田浩
Original Assignee
日商東京應化工業股份有限公司
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Application filed by 日商東京應化工業股份有限公司 filed Critical 日商東京應化工業股份有限公司
Publication of TW201920892A publication Critical patent/TW201920892A/zh
Application granted granted Critical
Publication of TWI788363B publication Critical patent/TWI788363B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
TW107119608A 2017-08-31 2018-06-07 基板加熱裝置、基板處理系統及基板加熱方法 TWI788363B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-167805 2017-08-31
JP2017167805A JP6554516B2 (ja) 2017-08-31 2017-08-31 基板加熱装置、基板処理システム及び基板加熱方法

Publications (2)

Publication Number Publication Date
TW201920892A TW201920892A (zh) 2019-06-01
TWI788363B true TWI788363B (zh) 2023-01-01

Family

ID=65801067

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107119608A TWI788363B (zh) 2017-08-31 2018-06-07 基板加熱裝置、基板處理系統及基板加熱方法

Country Status (3)

Country Link
JP (1) JP6554516B2 (ja)
KR (1) KR102469840B1 (ja)
TW (1) TWI788363B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102263713B1 (ko) * 2019-06-27 2021-06-10 세메스 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129774A (ja) * 1991-11-07 1993-05-25 Toray Ind Inc フレキシブル配線基板の製造方法
JP2003136038A (ja) * 2001-11-06 2003-05-13 Tiger Vacuum Bottle Co Ltd 減圧生ゴミ処理方法と装置
TW200741900A (en) * 2006-03-22 2007-11-01 Shinetsu Chemical Co Production method for semiconductor device
TW201218298A (en) * 2010-07-12 2012-05-01 Tokyo Electron Ltd Substrate processing apparatus, substrate processing method, and recording medium
TW201519329A (zh) * 2013-06-20 2015-05-16 Nitto Denko Corp 電子元件之密封方法、電子元件封裝體之製造方法及密封片
TW201724398A (zh) * 2015-10-30 2017-07-01 東京應化工業股份有限公司 基板加熱裝置及基板加熱方法
TW201734394A (zh) * 2016-03-15 2017-10-01 Screen Holdings Co Ltd 減壓乾燥方法及減壓乾燥裝置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016421A1 (ja) * 2008-08-08 2010-02-11 芝浦メカトロニクス株式会社 熱処理装置及び熱処理方法
JP5781803B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 温度制御方法及びプラズマ処理システム
JP5889691B2 (ja) * 2012-03-28 2016-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129774A (ja) * 1991-11-07 1993-05-25 Toray Ind Inc フレキシブル配線基板の製造方法
JP2003136038A (ja) * 2001-11-06 2003-05-13 Tiger Vacuum Bottle Co Ltd 減圧生ゴミ処理方法と装置
TW200741900A (en) * 2006-03-22 2007-11-01 Shinetsu Chemical Co Production method for semiconductor device
TW201218298A (en) * 2010-07-12 2012-05-01 Tokyo Electron Ltd Substrate processing apparatus, substrate processing method, and recording medium
TW201519329A (zh) * 2013-06-20 2015-05-16 Nitto Denko Corp 電子元件之密封方法、電子元件封裝體之製造方法及密封片
TW201724398A (zh) * 2015-10-30 2017-07-01 東京應化工業股份有限公司 基板加熱裝置及基板加熱方法
TW201734394A (zh) * 2016-03-15 2017-10-01 Screen Holdings Co Ltd 減壓乾燥方法及減壓乾燥裝置

Also Published As

Publication number Publication date
TW201920892A (zh) 2019-06-01
JP2019045061A (ja) 2019-03-22
JP6554516B2 (ja) 2019-07-31
KR102469840B1 (ko) 2022-11-22
KR20190024670A (ko) 2019-03-08

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