TWI786289B - Composite body and process for producing a composite body - Google Patents

Composite body and process for producing a composite body Download PDF

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TWI786289B
TWI786289B TW108113203A TW108113203A TWI786289B TW I786289 B TWI786289 B TW I786289B TW 108113203 A TW108113203 A TW 108113203A TW 108113203 A TW108113203 A TW 108113203A TW I786289 B TWI786289 B TW I786289B
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copper
boride
doped
transition region
titanium
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TW201943679A (en
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貝恩哈德 蘭
迪亞特瑪 史普恩格
麥可 歐蘇利凡
彼德 波爾瑟克
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奧地利商攀時歐洲公司
德商攀時組成物質有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01GHORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G23/00Forestry
    • A01G23/02Transplanting, uprooting, felling or delimbing trees
    • A01G23/099Auxiliary devices, e.g. felling wedges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/14Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on borides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
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  • Ecology (AREA)
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Abstract

The present invention relates to a composite body consisting of a first portion and a second portion, and a transition zone which is between a surface or a region of a surface of the first portion and a surface or a region of a surface of the second portion and materially bonds the first portion to the second portion, wherein the first portion consists of a boride, a mixed boride ceramic, a doped boride or a doped mixed boride ceramic, the second portion consists of copper or a copper alloy, and the transition zone includes Ti and copper and has a melting temperature > 600°C. The present invention further describes a process for producing such a composite body.

Description

複合體以及製造複合體的方法Composite body and method of making composite body

本發明係關於一種複合體,其具有申請專利範圍第1項的前言部分的特徵,及關於一種製造複合體的方法。 The present invention relates to a composite body having the characteristics of the preamble of claim 1, and to a method for manufacturing the composite body.

由固體硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2所構成的體(body),已知應用於例如靶或電極等。塊體(bulk body)應理解為藉由熔融冶金方法或粉末冶金方法所製造的固體。 Bodies consisting of solid borides, boride-based ceramics, doped borides or doped boride-based ceramics, in particular TiB2, are known for applications such as targets or electrodes. A bulk body is to be understood as a solid produced by melt metallurgy or powder metallurgy.

藉由粉末冶金途徑來製造硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2的塊體、,其一般為有效果的,這是由於該等塊體具有高熔點的緣故。粉末冶金方法的實例包含壓制(pressing)、燒結、熱均壓(hot isostatic pressing;HIP)、熱壓制(hot pressing;HP)或放電電漿燒結(spark plasma sintering;SPS)及其之間彼此的組合。特別的是,吾人已發現放電電漿燒結(SPS)為一種非常好的製造途徑,這是因為藉由直流電流的支持作用或在壓實製程中可選擇的脈衝電流,可製造出塊狀硼化物組分,特別是具有高密度及高強度的TiB2組分。 It is generally effective to manufacture borides, boride-based ceramics, doped borides or doped boride - based ceramics, especially bulk TiB2, by the powder metallurgy route, which This is due to the high melting point of these blocks. Examples of powder metallurgy methods include pressing, sintering, hot isostatic pressing (HIP), hot pressing (hot pressing; HP) or spark plasma sintering (spark plasma sintering; SPS) and their interactions with each other. combination. In particular, we have found spark plasma sintering (SPS) to be a very good manufacturing route, since bulk boron can be produced with the support of direct current or optional pulsed current in the compaction process. Compound components, especially TiB2 components with high density and high strength.

TiB2係具有良好導熱性及良好導電性的硬質陶瓷。此外,TiB2在不同環境氣氛中表現出良好的抗氧化性及高耐腐蝕性。因為具有這些性質的 緣故,因此TiB2在塗層技術中係相當重要的。由於為TiB2層為陶瓷組合物的緣故,因此其主要係藉由物理氣相沉積來沉積但是也可藉由化學氣相沉積來沉積。此外,可藉由漿料塗覆或藉由熱噴塗方法來沉積TiB2層。特別的是,對於物理氣相沉積(PVD)來說,濺鍍靶或電弧陰極係由TiB2所製造。由於TiB2塊體材料及TiB2塗層具有導電性及耐腐蝕性的緣故,因此其可用作製造鋁的陰極材料。此外,TiB2可用於蒸發舟(evaporator boat)或是裝甲材料等,此處僅提及若干實例。 TiB 2 is a hard ceramic with good thermal conductivity and good electrical conductivity. In addition, TiB 2 exhibits good oxidation resistance and high corrosion resistance in different ambient atmospheres. Because of these properties, TiB2 is very important in coating technology. Since the TiB2 layer is a ceramic composition, it is mainly deposited by physical vapor deposition but can also be deposited by chemical vapor deposition. Furthermore, the TiB2 layer can be deposited by slurry coating or by thermal spraying methods. In particular, for physical vapor deposition (PVD), sputtering targets or arc cathodes are fabricated from TiB2. Due to the electrical conductivity and corrosion resistance of the TiB 2 bulk material and TiB 2 coating, it can be used as a cathode material for the manufacture of aluminum. In addition, TiB 2 can be used in evaporator boats or armor materials, etc., just to mention a few examples.

作為可用作靶或陰極材料的陶瓷材料的製造途徑,特別的是,諸如熱壓制或放電電漿燒結等為可能的技術。此處涉及到的材料的實例為:WC、SiC、TiB2、TiC,但是也可為其他碳化物、氮化物、硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷。由於這些材料具有高脆性及機械加工的困難度(這在某些情況中僅能藉由研磨或是線切割或是特定化學方法來完成)的緣故,因此必須為這些靶配備能將其固定在塗層生產線中的背板(backplate)。此外,特別有利的應用為將硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷應用於具有良好導電性及導熱性的主體,例如為由銅或銅合金所製成的主體。由於上述性質的關係,因此這種由第一部分及第二部分所組成的複合體也可用作電極,其中第一部分包含硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2等組成物,並且第二部分包含銅或銅合金等組成物。 As a production route of a ceramic material usable as a target or a cathode material, in particular, techniques such as hot pressing or discharge plasma sintering are possible. Examples of materials referred to here are: WC, SiC, TiB 2 , TiC, but also other carbides, nitrides, borides, boride-dominated ceramics, boride-doped or boron-doped Chemical-based ceramics. Due to the high brittleness of these materials and the difficulty of machining (which in some cases can only be done by grinding or wire cutting or specific chemical methods), it is necessary to equip these targets with the ability to hold them in place. Backplate in coating line. Furthermore, particularly advantageous applications are the application of borides, boride-based ceramics, doped borides or doped boride-based ceramics to bodies with good electrical and thermal conductivity, for example made of copper or Body made of copper alloy. Due to the above-mentioned properties, this composite body composed of the first part and the second part can also be used as an electrode, wherein the first part contains borides, boride-based ceramics, doped borides or doped Boride-based ceramics, especially TiB 2 and the like, and the second part includes copper or copper alloys and the like.

吾人一般將理解靶為意指由基板(baseplate)或背板及用於層沉積的實際濺鍍材料所組成的複合體。此外,也可在沒有背板的情形中由固體材料(僅濺鍍材料)來製造靶。在靶應用的情形中,特別是由諸如銅或銅合金的材料所組成的背板,可用於增加靶或濺鍍材料的機械彈性。藉由在濺鍍材料上施加背板來增加靶的強度及可延性(此處濺鍍材料基本上係由硼化物、以硼 化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷所組成;濺鍍材料基本上係由TiB2所組成),當在物理氣相沉積系統中使用時,僅會致使靶不明顯的變形,並且因此沒有由於例如熱應力而造成靶的破壞(例如破裂)。通常,所使用的靶係藉由具可延性的背板或藉由物理氣相沉積系統中所謂的冷卻板來冷卻,其中所述背板或冷卻板係設置在靶的背面。這些背板或冷卻板會施加壓力於靶上,這可能反過來致使靶的變形,或在使用脆性靶的情況中遭受機械應力時致使靶的破裂。此種效應可由於去除製程相關材料,而使得濺鍍材料的強度在塗覆期間降低而額外增強。因此,靶變得更加可能變形及/或破裂。施加具有增加的強度或可延性的背板可避免這種破壞的情況。 We will generally understand target to mean the composite body consisting of the baseplate or backing plate and the actual sputtering material used for layer deposition. Furthermore, targets can also be produced from solid material (only sputtered material) without a backing plate. In the case of target applications, particularly backing plates composed of materials such as copper or copper alloys can be used to increase the mechanical elasticity of the target or sputtering material. Increase the strength and ductility of the target by applying a backing plate on the sputtering material (where the sputtering material is basically boride, boride-based ceramic, doped boride or doped boride-based The main ceramic; the sputtering material essentially consists of TiB 2 ), when used in a physical vapor deposition system, causes only insignificant deformation of the target and thus no target deformation due to e.g. thermal stress Destroy (e.g. rupture). Usually, the targets used are cooled by means of a ductile backing plate or by means of so-called cooling plates in physical vapor deposition systems, wherein the backing plate or cooling plate is arranged on the rear side of the target. These backing or cooling plates exert pressure on the target, which may in turn cause deformation of the target, or, in the case of brittle targets, rupture of the target when subjected to mechanical stress. This effect can be additionally enhanced by the removal of process dependent material such that the strength of the sputtered material is reduced during coating. Consequently, the target becomes more likely to deform and/or break. Applying a backsheet with increased strength or ductility can avoid this failure scenario.

連接或接合兩種不同的材料構成技術上的挑戰,例如將第一種作為濺鍍材料的硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2,來連接或接合第二種的背板的金屬銅或金屬銅合金。特別是銅或銅合金在陶瓷材料(例如硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷)上的潤濕特性及/或連接特性,尤其是TiB2與銅的連接,應該保證在最大面積上有上述特性,並且應該具有最低程度的未連接區域(缺陷)。 Joining or bonding two dissimilar materials poses a technical challenge, such as borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics, In particular, TiB 2 is used to connect or bond the metal copper or metal copper alloy of the second backplane. In particular the wetting and/or bonding properties of copper or copper alloys on ceramic materials such as borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics, especially The connection of TiB 2 to copper should ensure the above characteristics over the largest area and should have the lowest degree of unconnected areas (defects).

例如碳化鎢靶等陶瓷靶與金屬背板的接合為已知的。一種以背板來提供碳化鎢靶(WC靶)的方法係以銅或銅合金對其進行背面鑄造(back casting),請參照如2014年5月的「研究揭露(Research Disclosure)」出版物中的描述(「碳化鎢-銅電之弧陰極或濺鍍靶(WC-Cu Arc Cathode or Sputtering Target)」,Research Disclosure Database Number 601040,2014年5月,ISSN 0374-4353)。此出版物描述例如銅或銅合金在碳化鎢(WC)上的潤濕特性。此處可使用諸如硼或鎳等潤濕劑,並且藉由電鍍方法、藉由漿料方法或藉由物理氣相沉積方法等將其作為薄膜而施加至陶瓷部分,以便在以銅或銅合金對其 進行背面鑄造之前增加潤濕特性。由於銅或以銅為主的合金具有差的潤濕性及/或不充分的連接,因此此方法不適用於硼化物。在Passerone等人的出版物「以液態金屬潤濕IV族二硼化物(Wetting of Group IV diborides by liquid metals)(2006年,《J Mater Sci》第41卷,第16期,第5088頁至第5098頁)」中詳細描述潤濕性。 The bonding of ceramic targets, such as tungsten carbide targets, to metal backplates is known. One way to provide a tungsten carbide target (WC target) with a back plate is to back cast it with copper or copper alloy, please refer to the "Research Disclosure (Research Disclosure)" publication in May 2014 ("WC-Cu Arc Cathode or Sputtering Target", Research Disclosure Database Number 601040, May 2014, ISSN 0374-4353). This publication describes the wetting behavior of eg copper or copper alloys on tungsten carbide (WC). Wetting agents such as boron or nickel can be used here and applied as a thin film to the ceramic part by electroplating methods, by slurry methods or by physical vapor deposition methods, etc., so that copper or copper alloys to it Adds wetting properties prior to backside casting. This method is not suitable for borides due to poor wettability and/or insufficient bonding of copper or copper-based alloys. In Passerone et al.'s publication "Wetting of Group IV diborides by liquid metals (Wetting of Group IV diborides by liquid metals)" (2006, "J Mater Sci" Vol. 41, No. 16, No. 5088 to No. Wettability is described in detail in page 5098).

避免潤濕問題的其中一種方法係以硼摻雜銅熔體,請參照如Aizenshtein等人的出版物的文章「以銅和金潤濕TiB2的性質(The Nature of TiB2 Wetting by Cu and Au)(2012年5月,《Materials Engineering and Performance》第21卷,第5期,第655頁至第659頁)」中所詳細描述的。WO 2012063524描述藉由低熔點焊料將複數靶組分接合到銅背板上。 One way to avoid the wetting problem is to dope the copper melt with boron, see for example the publication " The Nature of TiB 2 Wetting by Cu and Au" by Aizenshtein et al. ) (May 2012, "Materials Engineering and Performance", Volume 21, Issue 5, pages 655 to 659)" described in detail. WO 2012063524 describes the bonding of multiple target components to a copper backplane by means of low melting point solder.

以硼摻雜銅熔體的缺點為純銅的性質會隨著摻雜增加而改變。此外,使用低熔點焊料為不利的,這是因為其具有低的耐熱性。 A disadvantage of doping copper melts with boron is that the properties of pure copper change with increasing doping. Furthermore, it is disadvantageous to use low-melting-point solder because it has low heat resistance.

本發明所解決的問題是提出改進的複合體及製造這種複合體的改進方法。本發明所解決的另一個問題是確保銅或銅合金與硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2,兩者之間的可靠、可再現和耐熱的連接。 The problem addressed by the present invention is to propose an improved composite body and an improved method of producing such a composite body. Another problem addressed by the present invention is to ensure that copper or copper alloys and borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics, especially TiB 2 , reliable, reproducible and heat-resistant connections.

這些問題係藉由以下來解決:根據申請專利範圍第1項,提供硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的第一部分,由銅或銅合金所組成的第二部分,及介於第一部分與第二部分之間的過渡區域,其中過渡區域包含鈦和銅,並且過渡區域具有>600℃的熔融溫度;及提供根據申請專利範圍第9項的特徵的複合體的製造方法。本發明有利的具體實例詳細敘述在附屬項中。 These problems are solved by the following: according to claim 1, borides, boride-based ceramics, boride-doped or boride-doped first parts are provided, made of copper or copper alloys A second part is formed, and a transition region between the first part and the second part, wherein the transition region comprises titanium and copper, and the transition region has a melting temperature > 600°C; and providing the invention according to claim 9 The manufacturing method of the characteristic complex. Advantageous embodiments of the invention are described in detail in the appended clauses.

此處所描述的發明係藉由以下來解決潤濕性問題:在其經受以液態銅或液態銅合金進行背面鑄造之前,或以冷氣體噴塗(CGS)來施加第二部分之前,將個別的或交替的鈦、銅或鈦-銅層施加至由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2的主體所組成的基體。係藉由冷氣體噴塗(CGS)及/或化學氣相沉積(CVD)或物理氣相沉積(PVD)或漿料或低壓電漿噴塗,將這些個別的或交替的鈦層或銅層或鈦-銅層施加到硼化物主體(硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、或TiB2)的表面。此外,本發明描述第一部分(硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、或TiB2)藉由過渡區域耐溫接合至第二區域(銅或銅合金),其中過渡區域具有至少600℃,較佳至少700℃,並且更佳至少800℃的熔融溫度。 The invention described here solves the wettability problem by applying individual or Alternating titanium, copper or titanium-copper layers are applied to a substrate consisting of a body of borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics, in particular TiB 2 . These individual or alternating layers of titanium or copper or A titanium-copper layer is applied to the surface of the boride host (boride, boride-dominated ceramic, doped boride or doped boride-dominated ceramic, or TiB2 ) . In addition, the present invention describes the first part (boride, boride-dominant ceramic, doped boride or doped boride-dominant ceramic, or TiB2) temperature resistant bonded to the second region ( copper or copper alloy), wherein the transition region has a melting temperature of at least 600°C, preferably at least 700°C, and more preferably at least 800°C.

本發明描述硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2,其與液態銅或銅合金的可再現及可靠的潤濕性。相較於先前技術來說,本發明的優點在於可在製造中實施此技術而不會改變硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、或例如TiB2的性質。相較於先前技術來說,本發明的另一個優點在於無須改變用於背面鑄造的銅或銅合金的組成物,例如無須加入硼至合金中來增加潤濕性。 The present invention describes the reproducible and reliable wettability of borides, boride-based ceramics, boride-doped or boride- doped ceramics, in particular TiB2, with liquid copper or copper alloys . An advantage of the present invention over the prior art is that it can be implemented in fabrication without altering borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics, Or properties such as TiB2 . Another advantage of the present invention over the prior art is that there is no need to change the composition of the copper or copper alloy used for backside casting, eg, no addition of boron to the alloy to increase wettability.

A:TiB2的第一部分 A: The first part of TiB 2

B:過渡區域/過渡區 B: transition area / transition area

C:由銅所組成的第二部分 C: The second part made of copper

從以下參考附圖的工作實施例的描述中,本發明的其他優點將變得顯而易見。 Other advantages of the invention will become apparent from the following description of working embodiments with reference to the accompanying drawings.

圖1:1號樣品的介於TiB2與銅之間的過渡區域的掃描式電子顯微圖(請參照表1和表2)。 Figure 1: Scanning electron micrograph of the transition region between TiB2 and copper of sample No. 1 (please refer to Table 1 and Table 2).

圖2:1號樣品的表面影像(請參照表1及表2),其在以銅進行背面鑄造之前已設置有中間層。 Figure 2: Surface image of sample No. 1 (please refer to Table 1 and Table 2), which has been provided with an intermediate layer before backside casting with copper.

圖3:2號樣品的介於TiB2與銅之間的過渡區域的掃描式電子顯微圖(請參照表1和表2)。 Figure 3: Scanning electron micrograph of the transition region between TiB 2 and copper of sample No. 2 (please refer to Table 1 and Table 2).

圖4:在1號樣品的複合體的過渡區域中進行的DIN顯微硬度測量(請參照表1及表2)。 Figure 4: DIN microhardness measurements in the transition zone of the composite of sample No. 1 (please refer to Table 1 and Table 2).

圖5:在1號樣品的複合體的背面鑄造銅部分中進行的DIN顯微硬度測量(請參照表1及表2)。 Figure 5: DIN microhardness measurements performed in the backside cast copper part of the composite of sample No. 1 (please refer to Table 1 and Table 2).

根據本發明,複合體具有第一部分、第二部分及過渡區域。過渡區域係介於第一部分的表面或表面區與第二部分的表面或表面區之間。第一部分係由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷所組成。更具體地,第一部分係由TiB2、以TiB2為主的陶瓷、摻雜TiB2或以TiB2摻雜為主的陶瓷所組成。 According to the invention, the composite body has a first part, a second part and a transition region. A transition region is between a surface or surface region of a first part and a surface or surface region of a second part. The first part consists of borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics. More specifically, the first part consists of TiB2, TiB2 - dominated ceramics, doped TiB2 or TiB2 - doped ceramics.

硼化物應理解為意指金屬或複數種金屬與硼的化合物。此外,硼化物應特別理解為意指結晶學中具有MeB2結構或Me2B5結構的那些硼化物。在上下文中,應特別提及具有良好導電性的硬質及最高熔點類型,例如硼化鈦(TiB2)。在結構方面,硼化鈦係由緊密堆積的金屬原子和六方硼網絡的交替層所形成,此致使上述良好的導電性。硼化合物的實例特別包含TiB2、VB2、CrB2、ZrB2、NbB2、MoB2、HfB2、TaB2、UB2、AlB2、ReB2、MgB2及WB2或W2B5。混合氮化硼應特別理解為意指上面所描述的至少兩種硼化物的混合物。摻雜硼化物或混合硼化物陶瓷可包含額外的的元素或化合物,但額外的元素的總比例不得超過20mol%,特別是不得超過10mol%。添加到硼化物或混合硼化 物陶瓷的額外的元素,可為例如Fe、Ni、Co、Cr、Ti、Mo、Zr等純金屬,或是例如TiC、WC、NbC等碳化物,但也可為例如C、B或Si等純元素。此處,應特別提及摻雜硼的TiB2或摻雜矽的TiB2Borides are understood to mean compounds of a metal or metals with boron. Furthermore, borides are to be understood in particular as meaning those borides which have the structure MeB 2 or Me 2 B 5 in crystallography. In this context, special mention should be made of hard and highest melting types with good electrical conductivity, such as titanium boride (TiB 2 ). In terms of structure, the titanium boride system is formed of alternating layers of closely packed metal atoms and hexagonal boron networks, which lead to the aforementioned good electrical conductivity. Examples of boron compounds include in particular TiB 2 , VB 2 , CrB 2 , ZrB 2 , NbB 2 , MoB 2 , HfB 2 , TaB 2 , UB 2 , AlB 2 , ReB 2 , MgB 2 and WB 2 or W 2 B 5 . Mixed boron nitride is to be understood in particular as meaning a mixture of at least two borides described above. Doped boride or mixed boride ceramics may contain additional elements or compounds, but the total proportion of additional elements must not exceed 20 mol %, in particular not exceed 10 mol %. Additional elements added to boride or mixed boride ceramics can be pure metals such as Fe, Ni, Co, Cr, Ti, Mo, Zr, etc., or carbides such as TiC, WC, NbC, but can also be Such as pure elements such as C, B or Si. Here, boron-doped TiB 2 or silicon-doped TiB 2 should be mentioned in particular.

複合體的第一部分主要由無紋理的微結構所組成,其中無紋理的微結構沒有優選晶粒排列,並且具有<20μm,較佳<10μm,更佳<5μm的平均晶粒尺寸。複合體的第二部分基本上係由純銅或銅合金所組成,並且展現>0.5μm,較佳>1μm,更佳>1.5μm的平均晶粒尺寸。銅合金應理解為意指與銅的合金,其中銅為主要成分,並且合金元素的總比例係<50重量%,較佳<30重量%,並且更佳<20重量%。銅合金的實例包含CuZn、CuZnSi、CuMg、CuAl、CuBe、CuCrZr及CuZn。過渡區域包含鈦及銅。根據本發明,過渡區域具有>600℃,較佳>700℃,並且更佳>800℃的熔融溫度(或軟化溫度)。過渡區域沒有低熔點相,本文件中的「低熔點」係指代在銦或錫的熔點數量級內的那些溫度範圍。 The first part of the composite mainly consists of a non-textured microstructure, wherein the non-textured microstructure has no preferred grain alignment and has an average grain size of <20 μm, preferably <10 μm, more preferably <5 μm. The second part of the composite consists essentially of pure copper or a copper alloy and exhibits an average grain size of >0.5 μm, preferably >1 μm, more preferably >1.5 μm. Copper alloys are understood to mean alloys with copper in which copper is the main constituent and the total proportion of alloying elements is <50% by weight, preferably <30% by weight, and more preferably <20% by weight. Examples of copper alloys include CuZn, CuZnSi, CuMg, CuAl, CuBe, CuCrZr, and CuZn. The transition region contains titanium and copper. According to the invention, the transition zone has a melting temperature (or softening temperature) >600°C, preferably >700°C, and better >800°C. The transition region is free of low-melting phases, and "low-melting" in this document refers to those temperature ranges that are within the order of the melting points of indium or tin.

因此,與習知技術相比,化合物具有顯著改善的耐熱性。此為特別令人感興趣的,這是因為可在塗覆系統中實現更高的功率密度及/或濺鍍速率。 Thus, the compound has a significantly improved heat resistance compared to the prior art. This is of particular interest because higher power densities and/or sputtering rates can be achieved in coating systems.

關於合金的熔融溫度,係參照相應合金的液相線,此處在使用銅合金的情形中,在低於600℃,較佳低於700℃,並且更佳低於800℃時,不會形成液相。可將複合體藉由處於600℃或700℃或800℃的窯爐來展示其熱穩定性,在其中根本不會形成任何的液相,這將不可避免地致使第一部分與第二部分之間的接合損失(或是過渡區域軟化)或複合體形狀改變。為測試複合體的熱穩定性,特別是測試過渡區域的熱穩定性,會將複合體裝進窯爐中,使得複合體的一個部分及至少整個過渡區域為獨立的(free-standing),此意指一個部分及至少整個過渡區域係沒有夾緊的或固定的。此外,複合體在窯爐中係對齊 的,使得過渡區域的平面,或換句話說,介於第一部分與第二部分之間的過渡區係平行於重力而對齊,使得在過渡區域軟化或過渡區域中形成液相的情況中,藉由重力作用,一個部分可從第二部分分離或相對於第二部分移動。隨後,將窯爐升溫。在複合體的芯達到所需溫度600℃,較佳700℃,並且更佳800℃,並在1個小時的保持時間後,再次冷卻窯爐。如果過渡區域的熔融溫度或軟化溫度應低於窯爐的設定溫度,則獨立的、未夾緊的或沒有固定的部分將因重力的作用而從複合體夾緊的部分分離或相對於複合體夾緊的部分移動。 With regard to the melting temperature of the alloy, reference is made to the liquidus line of the corresponding alloy, where in the case of copper alloys, below 600°C, preferably below 700°C, and more preferably below 800°C, no liquid phase. The thermal stability of the complex can be demonstrated by passing it through a kiln at 600°C or 700°C or 800°C, in which no liquid phase will form at all, which will inevitably lead to a gap between the first part and the second part. joint loss (or softening of the transition zone) or composite shape change. In order to test the thermal stability of the composite body, especially the thermal stability of the transition zone, the composite body will be loaded into a kiln so that a part of the composite body and at least the entire transition zone are free-standing. Means that a part and at least the entire transition area is not clamped or fixed. In addition, the complex is aligned in the kiln so that the plane of the transition zone, or in other words, the transition zone between the first part and the second part is aligned parallel to gravity, so that in the case of softening of the transition zone or formation of a liquid phase in the transition zone, by One part may be detached from or moved relative to a second part by the force of gravity. Subsequently, the furnace is heated up. After the core of the composite has reached the desired temperature of 600°C, preferably 700°C, and more preferably 800°C, and after a hold time of 1 hour, the kiln is cooled again. If the melting or softening temperature of the transition zone should be lower than the set temperature of the kiln, the freestanding, unclamped or unsecured parts will be separated by gravity from the clamped parts of the composite or relative to the composite The clamped part moves.

過渡區域為擴散區,其產生自介於第一部分中的硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2,與由銅或銅合金所組成的固化或已固化的背面鑄造熔體(第二部分)之間的過渡區。此外,過渡區域可為一區域,其係產生自介於第一部分的硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷、特別是TiB2,與藉由冷氣體噴塗所施加的在第二部分之間的過渡區域。 The transition region is a diffusion region arising from the boride, boride-dominant ceramic, doped boride or doped boride-dominant ceramic, in particular TiB 2 , in the first part, and from copper or Transition zone between solidified or solidified back casting melt (second part) composed of copper alloy. Furthermore, the transition region may be a region arising from a boride, boride-dominated ceramic, doped boride or doped boride - dominated ceramic, in particular TiB2, between the first part, and The transition area between the second parts is applied by cold gas spraying.

在一個有利的具體實例中,複合體的過渡區域基本上沒有典型的焊料成分,例如銦、錫、鍺、銀、鈀、鎳、鉑、鈷、錳或金。在每種情況中,過渡區域具有<5,000ppm的銦、錫、鍺、銀、鈀、鎳、鉑、鈷、錳或金的含量,較佳在每種情況中具有<2,000ppm的含量,更佳在每種情況中具有<1,000ppm的含量。 In an advantageous embodiment, the transition region of the composite is substantially free of typical solder components such as indium, tin, germanium, silver, palladium, nickel, platinum, cobalt, manganese or gold. In each case, the transition region has a content of <5,000 ppm indium, tin, germanium, silver, palladium, nickel, platinum, cobalt, manganese or gold, preferably <2,000 ppm in each case, more preferably Best has a content of <1,000 ppm in each case.

在一個有利的具體實例中,複合體的第一部分係由TiB2、具有至少20mol%TiB2的以TiB2為主的陶瓷,較佳具有至少30mol%TiB2的以TiB2為主的陶瓷,並且更佳具有至少50mol%TiB2的以TiB2為主的陶瓷所組成。吾人已發現本發明特別適合應用於由材料TiB2所製成的電弧陰極。由於TiB2與銅的背板之間的接合緣故,其具有熱穩定性、黏著性及具有良好的導電性,因此可在光弧製程中操作直徑63mm及高度32mm的電弧陰極長達若干小時,而不會損 害陰極的穩定性。 In an advantageous embodiment, the first part of the composite body is composed of TiB2, a TiB2 - based ceramic with at least 20 mol% TiB2, preferably a TiB2 - based ceramic with at least 30 mol % TiB2, And more preferably it consists of a TiB 2 -based ceramic having at least 50 mol% TiB 2 . We have found that the invention is particularly suitable for application to arc cathodes made of the material TiB2. Due to the bonding between TiB 2 and the copper backplane, it is thermally stable, adhesive and has good electrical conductivity, so arc cathodes with a diameter of 63 mm and a height of 32 mm can be operated for several hours in the light arc process, without compromising the stability of the cathode.

在一個有利的具體實例中,複合體的第一部分係由碳摻雜的TiB2所組成。碳摻雜的TiB2應理解為對TiB2添加達到10mol%的碳,較佳對TiB2添加至少5mol%的碳,並且更佳對TiB2添加至多2mol%的碳。公開的說明書WO2011137472A1中揭示以石墨摻雜TiB2陶瓷所產生的優點。 In an advantageous embodiment, the first part of the composite consists of carbon- doped TiB2. Carbon- doped TiB2 is understood as adding up to 10 mol% carbon to TiB2, preferably at least 5 mol% carbon to TiB2, and more preferably up to 2 mol% carbon to TiB2. Published specification WO2011137472A1 discloses the advantages resulting from the doping of TiB2 ceramics with graphite.

在本發明的另一個有利的具體實例中,過渡區域具有介於5μm至500μm之間的平均厚度,較佳介於8μm至300μm之間的平均厚度,更佳介於10μm至200μm之間的平均厚度。過渡區域的層的厚度係藉由掃描式電子顯微鏡或藉由光學顯微鏡來量測。此係藉由將金相拋光區段與過渡區域的平面成直角,並且接著藉由掃描式電子顯微鏡或藉由光學顯微鏡以適當的放大率來量測層的厚度。量測過渡區域的層的厚度應在所述區段的代表性位置來進行。在這種情況中,應檢視至少10個代表性位置,並且應建立代表過渡區域的平均的層的厚度的平均值。 In another advantageous embodiment of the invention, the transition region has an average thickness between 5 μm and 500 μm, preferably between 8 μm and 300 μm, more preferably between 10 μm and 200 μm. The thickness of the layer in the transition region is measured by scanning electron microscopy or by optical microscopy. This is done by placing the metallographically polished section at right angles to the plane of the transition region, and then measuring the thickness of the layer by scanning electron microscopy or by optical microscopy at appropriate magnification. Measuring the thickness of the layer in the transition zone should be done at a representative location of the section. In this case, at least 10 representative locations should be inspected, and an average value of the thickness of the layer representing the average of the transition region should be established.

在本發明的另一個有利的具體實例中,過渡區域中銅的濃度及過渡區域中鈦的濃度,兩者從第一部分的表面一直到第二部分的表面,各自具有累進濃度輪廓(graduated concentration profile)。銅的濃度在由銅或銅合金所組成的第二部分的表面,向由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷所組成的第一部分的表面減少。鈦的濃度在由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷所組成的第一部分的表面,向由銅或銅合金所組成的第二部分的表面減少。在每種情況中,濃度的變化可為連續的或突然的。在掃描式電子顯微鏡或光學顯微鏡底下,過渡區域為清楚明確的。鈦的累進濃度輪廓及銅的累進濃度輪廓可藉由掃描式電子顯微鏡並且藉由能量分散分析(EDX)來量測。 In another advantageous embodiment of the invention, the concentration of copper in the transition region and the concentration of titanium in the transition region each have a graduated concentration profile from the surface of the first part all the way to the surface of the second part ). Concentration of copper at the surface of the second part consisting of copper or copper alloys to the first part consisting of borides, boride-dominated ceramics, doped borides, or doped boride-dominated ceramics surface reduction. The concentration of titanium increases from the surface of the first part consisting of borides, boride-based ceramics, doped borides, or doped boride-dominated ceramics to the second part consisting of copper or copper alloys. surface reduction. In each case, the change in concentration may be continuous or abrupt. Under a scanning electron microscope or an optical microscope, the transition region is clearly defined. The progressive concentration profile of titanium and copper can be measured by scanning electron microscopy and by energy dispersive analysis (EDX).

在本發明的另一個有利的具體實例中,過渡區域中的平均硬度 較由銅或銅合金所組成的第二部分的平均硬度高至少10%,較佳高至少20%。硬度為機械阻力,其係由體提供予另一個更硬的體穿透的阻力。此涉及在固定條件中將標準化樣品壓入工件表面。較佳係使用根據維氏(Vickers)的顯微硬度試驗,但也可使用根據洛氏(Rockwell)或勃氏(Brinell)的顯微硬度試驗。較佳係根據DIN EN ISO 6507來量測顯微硬度。對於代表性的硬度量測來說,在每種情況中,應以相同的條件在一代表性位置進行至少10次的量測,並且應使用這些量測以形成代表平均硬度值的平均值。 In another advantageous embodiment of the invention, the average hardness in the transition zone At least 10% higher, preferably at least 20% higher than the average hardness of the second portion consisting of copper or copper alloy. Hardness is the mechanical resistance, which is the resistance offered by a body to the penetration of another, harder body. This involves pressing standardized samples into the workpiece surface in fixed conditions. Preferably a microhardness test according to Vickers is used, but a microhardness test according to Rockwell or Brinell may also be used. The microhardness is preferably measured according to DIN EN ISO 6507. For representative hardness measurements, in each case at least 10 measurements should be made at a representative location under identical conditions, and these measurements should be used to form an average value representing the average hardness value.

在另一個有利的具體實例中,至少50%,較佳至少70%,更佳至少90%的過渡區域,顯示出冶金連接至第一部分的表面及冶金連接至第二部分的表面。可首先以非破壞檢測方式,藉由超聲波或X射線來檢查複合體來檢查此接合及其百分比;其次藉由藉由光學顯微鏡或掃描式電子顯微鏡來製造橫向拋光區段及對過渡區域進行後續分析。借助於超聲波測試,吾人可看見介於硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、特別是TiB2之間的孔洞及未連接區域。超聲波測試可從銅或銅合金的表面朝向陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷,或TiB2)來進行,或從陶瓷表面朝向銅或銅合金來進行。超聲波測試給出空間解析影像,在空間解析影像中可以二維形式(通常也具有色彩)看見未連接區域及在陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷,或TiB2)至銅或銅合金的過渡處的其他缺陷。對本領域技術人員來說,影像中的連接區域及未連接區域是清楚明確的。未連接區域的面積係藉由對出現在量測區域中的所有未連接的個別區域進行總和來決定。根據本發明,所有未連接區域的總和與量測區域的比例總是<0.5,較佳<0.3,並且更佳<0.1。這意指以陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷,或TiB2)與銅或銅合金的面積而言的連接,總是高於50%,較佳高於 70%,更佳高於90%。 In another advantageous embodiment, at least 50%, preferably at least 70%, more preferably at least 90% of the transition zone exhibits a metallurgical bond to the surface of the first portion and a metallurgical bond to the surface of the second portion. This junction and its percentages can be checked first by non-destructive testing by inspecting the composite by means of ultrasound or X-rays; secondly by making laterally polished sections by means of optical microscopy or scanning electron microscopy and following transition areas analyze. With the help of ultrasonic testing, we can see voids and unconnected areas between borides, boride-based ceramics, doped borides, doped boride-based ceramics, especially TiB2. Ultrasonic testing can be performed from the surface of the copper or copper alloy towards the ceramic (boride, boride-dominated ceramic, doped boride, doped boride-dominated ceramic, or TiB 2 ), or from the surface of the ceramic Proceed towards copper or copper alloys. Ultrasonic testing gives spatially resolved images in which unconnected regions and ceramics (borides, boride-dominated ceramics, doped borides, doped Other defects at the transition of boride-dominated ceramics, or TiB2 ) to copper or copper alloys. For those skilled in the art, the connected and unconnected regions in the image are clear and definite. The area of the unconnected area is determined by summing all unconnected individual areas present in the measurement area. According to the invention, the ratio of the sum of all unconnected areas to the measured area is always <0.5, preferably <0.3, and more preferably <0.1. This means that the connection in terms of area of ceramic (boride, boride-dominated ceramic, doped boride, doped boride-dominated ceramic, or TiB 2 ) to copper or copper alloy is always Higher than 50%, preferably higher than 70%, more preferably higher than 90%.

借助於X射線測試,吾人係有可能看見介於陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷,或TiB2)及銅或銅合金之間的孔洞及未連接區域。X射線測試可從銅或銅合金的表面朝向陶瓷來進行,或從陶瓷表面朝向銅或銅合金來進行。X射線測試給出空間解析影像,在空間解析影像中可以二維形式看見未連接區域及在陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、或TiB2)至銅或銅合金的過渡處的其他缺陷。對本領域技術人員來說,影像中的連接區域及未連接區域是清楚明確的。未連接區域的面積係藉由對出現在量測區域中的所有未連接的個別區域進行總和來決定。根據本發明,所有未連接區域的總和與量測區域的比例總是<0.5,較佳<0.3,並且更佳<0.1。這意指以陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、或TiB2)與銅或銅合金的面積而言的連接,總是高於50%,較佳高於70%,更佳高於90%。 With the help of X-ray testing, it is possible to see something between ceramics (borides, boride-dominated ceramics, doped borides, doped boride-dominated ceramics, or TiB 2 ) and copper or copper alloys holes and unconnected areas between them. X-ray testing can be performed from the surface of the copper or copper alloy towards the ceramic, or from the surface of the ceramic towards the copper or copper alloy. The X-ray test gives a spatially resolved image in which unconnected areas and ceramics (borides, boride-based ceramics, doped borides, doped boride-dominated ceramics) can be seen in two dimensions. Other defects at the transition of ceramic, or TiB2 ) to copper or copper alloys. For those skilled in the art, the connected and unconnected regions in the image are clear and definite. The area of the unconnected area is determined by summing all unconnected individual areas present in the measurement area. According to the invention, the ratio of the sum of all unconnected areas to the measured area is always <0.5, preferably <0.3, and more preferably <0.1. This means that the connection in terms of area of ceramic (boride, boride-dominated ceramic, doped boride, doped boride-dominated ceramic, or TiB2 ) to copper or copper alloy is always Higher than 50%, preferably higher than 70%, more preferably higher than 90%.

在另一個有利的具體實例中,萬一在第一部分與第二部分之間發生拉應力並且負載的方向係垂直於第一部分及第二部分藉由過渡區域接合的表面的情況中,斷裂應力為至少15MPa,較佳>20MPa,更佳>30MPa,其中斷裂應力係基於過渡區域的連接部分。借助於拉伸試驗,例如,根據DIN EN ISO 6892-1:2009 1:2009-12,吾人可決定陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、或TiB2)與銅或銅合金接合的斷裂應力。此試驗藉由將複合體夾緊在拉伸試驗機中來完成,使得拉伸方向或應力方向係垂直於銅或銅合金與陶瓷(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、或TiB2)的表面,其中該等表面係藉由過渡區域來接合。隨後,組分經受應力直至其斷裂為止。拉伸應力的量測係基於連接的區域,亦即純斷裂區域。對本領域技術人員來說,斷裂區域(連接區域)係清楚 明確的。根據本發明製造出的體,基於斷裂區域,顯示>15MPa的拉伸強度,較佳>20MPa的拉伸強度,更佳>30MPa的拉伸強度。 In another advantageous embodiment, in case a tensile stress occurs between the first part and the second part and the direction of the load is perpendicular to the surface where the first part and the second part are joined by the transition zone, the fracture stress is At least 15MPa, preferably >20MPa, more preferably >30MPa, wherein the fracture stress is based on the connecting part of the transition zone. With the aid of tensile tests, for example, according to DIN EN ISO 6892-1:2009 1:2009-12, we can determine the ceramics (borides, boride-dominated ceramics, boride-doped, boride-doped The fracture stress of the main ceramic, or TiB 2 ) bonded to copper or copper alloy. This test is performed by clamping the composite in a tensile testing machine so that the direction of tension or stress is perpendicular to the copper or copper alloy and ceramic (boride, boride-based ceramic, boride-doped , boride-doped ceramics, or TiB 2 ), wherein the surfaces are joined by a transition region. Subsequently, the component is subjected to stress until it breaks. The measurement of tensile stress is based on the connected area, ie the pure fracture area. To the person skilled in the art, the region of break (connection region) is clearly defined. The bodies produced according to the invention show, based on the fracture area, a tensile strength of >15 MPa, preferably >20 MPa, more preferably >30 MPa.

本發明同樣有關於一種製造複合體的方法,該複合體係由第一部分、第二部分及至少一個過渡區域所組成,該過渡區域係形成於該第一部分的表面或表面區與該第二部分的表面或表面區之間,其特徵在於下列步驟:- 由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷以粉末冶金來製造該第一部分,- 以至少一層包含鈦或鈦和銅的中間層來塗覆該第一部分的至少一個表面區段,- 藉由對已塗覆有銅或銅合金的該中間層的該第一部分的該表面進行背面鑄造(back casting),或藉由對已塗覆有銅或銅合金的該中間層的該第一部分的該表面進行冷氣體噴塗(CGS),來製造該複合體的該第二部分,- 從而形成介於該第一部分與該第二部分之間的過渡區域。 The invention also relates to a method for producing a composite system consisting of a first part, a second part and at least one transition zone formed between the surface or surface region of the first part and the second part. Surfaces or between surface regions, characterized by the following steps: - manufacturing the first part by powder metallurgy from borides, boride-dominated ceramics, doped borides or doped boride-dominated ceramics, - Coating at least one surface section of the first part with at least one intermediate layer comprising titanium or titanium and copper, by backcasting the surface of the first part which has been coated with the intermediate layer of copper or copper alloy (back casting), or by cold gas spraying (CGS) the surface of the first part of the intermediate layer which has been coated with copper or copper alloy, to make the second part of the composite body, - thereby forming A transition region between the first portion and the second portion.

本發明用於製造複合體的方法實現可靠地且在可靠的方法中闡述上方有關於本發明的組分的優點。此外,本發明的前面所描述的有利的具體實例對於本發明的方法來說,同樣是有利的。 The method according to the invention for producing a composite body achieves the advantages explained above in relation to the components according to the invention reliably and in a reliable method. Furthermore, the previously described advantageous embodiments of the invention are also advantageous for the method of the invention.

特別較佳的是,第一部分係由粉末冶金所製造,第二部分係藉由背面鑄造所製造,並且在背面鑄造以前,第一部分的表面或部分第一部分的表面具有至少一個鈦或鈦和銅的中間層。 It is particularly preferred that the first part is produced by powder metallurgy and the second part is produced by back casting, and that, prior to back casting, the surface of the first part or part of the surface of the first part has at least one layer of titanium or titanium and copper middle layer.

以這種方式實現的正面效果包含以下:- 銅或銅合金在具有至少一個中間層的第一部分上具有良好潤濕性,- 複合材料的熱穩定性係因此產生,並且形成熔點高於600℃的過渡區域。 Positive effects achieved in this way include the following: - good wettability of copper or copper alloys on the first part with at least one intermediate layer, - thermal stability of the composite material resulting and formation of melting points higher than 600°C the transition area.

背面鑄造應理解為意指將材料粉末冶金地施加到基底材料上,其中基底材料總是處於固體的物質狀態並且使用所述製程參數。在進行背面鑄造之前,第一部分係塗覆在具有至少一個中間層的至少一個表面區段中,其中該至少一個中間層包含鈦或鈦和銅。在進行背面鑄造時,舉例來說,會將由硼化物、混合硼化物陶瓷、摻雜硼化物或摻雜混合硼化物陶瓷所組成的呈固體形式的塊體基底材料(其通常表面塗覆有至少一個中間層)引入窯爐空間中。隨後,會將由銅或銅合金所組成的第二材料施加到基底材料上。其後,最初呈鬆散形式並且尚未黏合地接合的複合體會在合適的製程氛圍中加熱,其可能採用斜坡函數(ramp function),直到由銅或銅合金所組成的施加材料熔融,並且潤濕非熔融的基底材料為止。舉例來說,純銅的熔點為1085℃。吾人應選擇窯爐的溫度,使得該溫度係高於相圖中合金組成物的液相線。在進行背面鑄造時,吾人應保持窯爐的溫度高於液相線以上足夠長的時間,以便可形成完全熔融的施加的銅或銅合金。過渡區域係在第一部分與第二部分之間形成。過渡區域係由於鈦或鈦/銅層熔解在藉由背面鑄造所施加的銅或銅合金中而形成。在一段高於熔點的所需保持時間之後,窯爐又冷卻至低於銅或銅合金的熔點。在銅或銅合金固化之後,冷卻的複合體具有由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷所組成的第一部分,及由銅或銅合金所組成的第二部分,及介於第一部分與第二部分之間包含鈦和銅的過渡區域,並且該過渡區域具有>600℃的熔融溫度或軟化溫度。可選擇地,吾人可藉由車削(turning)、切削(machining)、切割(cutting)、磨削(grinding)、研磨(lapping)、壓制(pressing)、壓花(embossing)或軋製(rolling)來對固化的複合體進行機械加工或再加工。其後,也可在複合體上進行鍛接(welding)、焊接(soldering)、接合(joining)或黏合(bonding)製程。此外,吾人可隨後對複合體進行雕刻(engraving)、蝕刻(etching)或腐刻 (eroding)。除對複合體進行機械加工以外,也可對複合體進行熱後處理,例如退火、氧化或還原,以獲得所需的微結構性質。 Backside casting is understood to mean the powder metallurgical application of material onto a base material, wherein the base material is always in a solid state of matter and using the stated process parameters. Before back casting, the first part is applied in at least one surface section with at least one intermediate layer, wherein the at least one intermediate layer contains titanium or titanium and copper. In backside casting, for example, a bulk substrate material consisting of borides, mixed boride ceramics, doped borides or doped mixed boride ceramics in solid form (usually coated with at least An intermediate layer) is introduced into the kiln space. Subsequently, a second material consisting of copper or a copper alloy is applied to the base material. Thereafter, the composite, initially in loose form and not yet adhesively joined, is heated in a suitable process atmosphere, possibly using a ramp function, until the applied material consisting of copper or copper alloy melts and wets the molten base material. For example, pure copper has a melting point of 1085°C. One should choose the temperature of the furnace so that it is above the liquidus of the alloy composition in the phase diagram. When performing backside casting, one should keep the temperature of the kiln above liquidus long enough so that a fully molten applied copper or copper alloy can form. A transition region is formed between the first portion and the second portion. The transition region is formed as a result of the dissolution of the titanium or titanium/copper layer in the copper or copper alloy applied by back casting. After a desired hold time above the melting point, the furnace is cooled down to below the melting point of the copper or copper alloy. After solidification of the copper or copper alloy, the cooled composite has a first part consisting of a boride, a boride-based ceramic, a doped boride or a doped boride-dominated ceramic, and a copper or copper The alloy comprises a second portion, and a transition region between the first portion and the second portion comprising titanium and copper, and the transition region has a melting or softening temperature >600°C. Alternatively, we can turn (turning), cutting (machining), cutting (cutting), grinding (grinding), lapping (lapping), pressing (pressing), embossing (embossing) or rolling (rolling) To machine or rework the cured composite. Thereafter, welding, soldering, joining or bonding processes may also be performed on the composite body. Furthermore, one can subsequently engraving, etching or etching the composite (eroding). In addition to mechanical processing of the composite body, the composite body can also be thermally post-treated, such as annealed, oxidized or reduced, in order to obtain the desired microstructural properties.

較佳的是,第一部分係由粉末冶金來製造,第二部分係藉由冷氣體噴塗(CGS)來施加,並且在施加第二部分之前,第一部分的表面或部分第一部分的表面具有至少一個鈦或鈦和銅的中間層。 Preferably, the first part is manufactured by powder metallurgy, the second part is applied by cold gas spraying (CGS), and the surface of the first part or part of the surface of the first part has at least one Titanium or an intermediate layer of titanium and copper.

冷氣體噴塗為一種塗覆製程,其中係將具有非常高的動能及低的熱能的粉末顆粒施加至基底材料上。藉由細腰噴嘴(convergent-divergent nozzle)(也稱作超音速噴嘴(supersonic nozzle))來使處在高壓中的製程氣體(例如,空氣、氦氣、氮氣及其混合氣體)膨脹。典型的噴嘴形式為拉瓦噴嘴(Laval nozzle)。根據所使用的製程氣體,可達成例如為300公尺/秒至1200公尺/秒(對於氮氣來說)到多達2500公尺/秒(對於氦氣來說)的氣體速度。舉例來說,塗覆材料係注入至形成噴槍一部分的細腰噴嘴的最窄橫截面的上游的氣流中,通常係加速至300公尺/秒至1200公尺/秒的速度,並且沉積在基材上。對細腰噴嘴的上游的氣體加熱,會增加氣體在噴嘴中行氣體膨脹時的流速,並因此也增加顆粒的速度。通常,在冷氣體噴塗的情況中,採用處於室溫至1000℃的氣體溫度。藉由冷氣體噴塗,吾人可噴塗可延性材料,特別是具有面心立方及六邊形緊密堆積晶格的可延性材料,以形成緻密的良好黏附層。通常,冷氣體噴塗係用於施加金屬層至金屬基材上;目前,施加金屬層至陶瓷基材上還不是一個成熟的製程。在冷氣體噴塗的情況中,層的形成係由塗覆材料的個別顆粒來逐層完成。冷氣體噴塗層的品質的關鍵因素為塗覆材料對於基材的黏合性及塗覆材料的顆粒之間的內聚力。原則上,在塗覆材料/基材界面的區域及塗覆材料的顆粒之間兩者的黏合性,為複數個物理及化學接合機制的相互作用,並且尚未為人們所解。由於低製程溫度的緣故,在冷氣體噴塗層中的粉末不會熔融,而是以未熔融的狀態撞擊待塗覆的基材,而這致使層的形成。由 於高動能及由於粉末在氣流中移動的高速度的緣故,當粉末撞擊基材表面時,粉末為機械式地互鎖,並且互鎖係由製程溫度所協助。以這樣的方式藉由冷氣體噴塗層所製造的層,在顯微鏡底下為明顯的,這是因為該層係由個別粉末顆粒所組成的層。藉由冷氣體噴塗來施加的層中的粉末顆粒並不會顯示任何的熔融相,並且該層在沉積層中也是清楚明確的。由於高動能衝擊能的緣故,因此粉末顆粒會歷經變形並且顯示出>1的長寬比(aspect ratio)。所施加的冷氣體噴塗層的個別晶粒的晶體取向,顯示出統計分布並且沒有優先方向。 Cold gas spraying is a coating process in which powder particles with very high kinetic energy and low thermal energy are applied to a substrate material. A process gas (eg, air, helium, nitrogen, and mixtures thereof) at high pressure is expanded by a convergent-divergent nozzle (also known as a supersonic nozzle). A typical nozzle form is the Laval nozzle. Depending on the process gas used, gas velocities of, for example, 300 m/s to 1200 m/s for nitrogen up to 2500 m/s for helium can be achieved. For example, the coating material is injected into the gas stream upstream of the narrowest cross-section of the waisted nozzle forming part of the spray gun, is typically accelerated to a velocity of 300 m/s to 1200 m/s, and deposited on the base on the material. Heating the gas upstream of the waisted nozzle increases the velocity of the gas as it expands in the nozzle, and thus increases the velocity of the particles. Typically, in the case of cold gas spraying, gas temperatures ranging from room temperature to 1000° C. are employed. With cold gas spraying, we can spray ductile materials, especially ductile materials with face-centered cubic and hexagonal close-packed lattices, to form dense, well-adhered layers. Typically, cold gas spraying is used to apply metal layers to metal substrates; currently, applying metal layers to ceramic substrates is not a well-established process. In the case of cold gas spraying, the layer formation is done layer by layer from individual particles of coating material. Key factors for the quality of cold gas sprayed coatings are the adhesion of the coating material to the substrate and the cohesion between the particles of the coating material. In principle, the cohesion both in the region of the coating material/substrate interface and between the particles of the coating material is the interplay of several physical and chemical bonding mechanisms and is not yet understood. Due to the low process temperature, the powder in the cold gas spray coating does not melt, but hits the substrate to be coated in an unfused state, which leads to the formation of the layer. Depend on Due to the high kinetic energy and due to the high speed at which the powder moves in the gas stream, the powder is mechanically interlocked when it hits the substrate surface, and the interlock is assisted by the process temperature. The layer produced in this way by cold gas spraying the coating is apparent under the microscope because it is a layer composed of individual powder particles. The powder particles in the layer applied by cold gas spraying do not show any molten phase and the layer is also clearly defined in the deposited layer. Due to the high kinetic impact energy, the powder particles undergo deformation and exhibit an aspect ratio >1. The crystallographic orientation of the individual grains of the applied cold gas sprayed coating shows a statistical distribution and no preferential orientation.

根據本發明的一個有利的製造方法,提供藉由利用TiB2或碳摻雜的TiB2或具有>20mol%TiB2的以TiB2為主的陶瓷來完成以粉末冶金來製造第一部分的步驟,其中較佳利用具有>30mol%TiB2的以TiB2為主的陶瓷,及更佳利用具有>50mol%TiB2的以TiB2為主的陶瓷。碳摻雜的TiB2應理解為意指對TiB2添加達到10mol%TiB2,較佳對TiB2添加至少5mol%TiB2,及更佳對TiB2添加至少2mol%TiB2According to an advantageous manufacturing method of the invention, it is provided that the step of manufacturing the first part by powder metallurgy is done by using TiB 2 or carbon-doped TiB 2 or TiB 2 -dominated ceramics with >20 mol% TiB 2 , Among them, TiB 2 -based ceramics with >30 mol% TiB 2 are preferably used, and TiB 2 -based ceramics with >50 mol% TiB 2 are more preferably used. Carbon-doped TiB 2 is understood to mean an addition of up to 10 mol % TiB 2 to TiB 2 , preferably at least 5 mol % TiB 2 to TiB 2 , and more preferably at least 2 mol % TiB 2 to TiB 2 .

根據本發明的一個有利的製造方法,提供將至少一個中間層施加至硼化物的第一部分(硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、或TiB2),上述較佳係藉由冷氣體噴塗(CGS)或藉由低壓電漿噴塗或藉由真空電漿噴塗。冷氣體噴塗(CGS)為一種塗覆製程,其中粉末顆粒係以非常高的動能和低的熱能施加到載體材料上。在電漿噴塗的情況中,粉末顆粒在氣流中熔融,並且以熔融的狀態撞擊待塗覆的基材。儘管電漿噴塗層中的層形態表明熔融顆粒的沉積並且與藉由冷氣體噴塗所產生的層有明顯的不同,然而電漿噴塗層的粉末顆粒同樣地具有長寬比。 According to an advantageous manufacturing method of the invention, it is provided that at least one intermediate layer is applied to the boride first part (boride, boride-dominated ceramic, doped boride, doped boride-dominated ceramic, or TiB 2 ), the above is preferably by cold gas spraying (CGS) or by low pressure plasma spraying or by vacuum plasma spraying. Cold Gas Spray (CGS) is a coating process in which powder particles are applied to a carrier material with very high kinetic energy and low thermal energy. In the case of plasma spraying, the powder particles are melted in the air stream and hit the substrate to be coated in a molten state. Although the layer morphology in plasma sprayed coatings shows the deposition of molten particles and is clearly different from layers produced by cold gas spraying, the powder particles of plasma sprayed coatings likewise have an aspect ratio.

根據本發明的一個有利的製造方法,提供藉由物理氣相沉積(PVD)或化學氣相沉積(CVD)將至少一個中間層施加至第一部分(其係由硼化物、以硼化物為主的陶瓷、摻雜硼化物、以摻雜硼化物為主的陶瓷、或 TiB2所組成)。物理氣相沉積層及化學氣相沉積層,通常顯示柱狀層生長及柱狀莖結構,並且與藉由冷氣體噴塗或藉由電漿噴塗所沉積的層有明顯的不同。物理氣相沉積層及化學氣相沉積層,通常在塗覆方向顯示出紋理。 According to an advantageous manufacturing method of the invention, it is provided that at least one intermediate layer is applied to the first part (which is composed of boride, boride-based ceramics, doped borides, ceramics dominated by doped borides, or TiB2). Physical vapor deposition and chemical vapor deposition layers generally show columnar layer growth and columnar stem structures and are distinct from layers deposited by cold gas spraying or by plasma spraying. Physical vapor deposited layers, as well as chemical vapor deposited layers, usually show texture in the direction of coating.

根據本發明的一個有利的製造方法,提供以複數層來施加中間層,其中複數層的個別層可具有不同的組成。複數層的個別層可由基本上純的鈦、基本上純的銅或鈦和銅的混合物、或鈦-銅合金所組成。 According to an advantageous production method of the invention, it is provided that the intermediate layer is applied in a plurality of layers, wherein the individual layers of the plurality of layers can have different compositions. Individual layers of the plurality of layers may consist of substantially pure titanium, substantially pure copper or a mixture of titanium and copper, or a titanium-copper alloy.

根據本發明的一個有利的製造方法,提供施加具有平均層的厚度為至少10μm的中間層或至少一層中間層,其中層的厚度較佳為至少15μm。中間層的層的厚度係藉由掃描式電子顯微鏡來決定。這包含將金相拋光區段與中間層的平面成直角,並且接著藉由掃描式電子顯微鏡或以適當的放大率來量測層的厚度。量測層的厚度應在該區段的代表性位置處來進行。此處,應檢視至少10個不同的代表性位置的層的厚度,並且應建立給出中間層的平均厚度值的平均值。 An advantageous production method according to the invention provides for applying an intermediate layer or at least one intermediate layer having an average layer thickness of at least 10 μm, wherein the thickness of the layer is preferably at least 15 μm. The layer thickness of the interlayer was determined by scanning electron microscopy. This involves placing the metallographically polished section at right angles to the plane of the intermediate layer, and then measuring the thickness of the layer by means of a scanning electron microscope or at an appropriate magnification. Layer thickness measurements shall be made at representative locations of the section. Here, the thickness of the layer at least 10 different representative locations should be examined, and an average should be established giving the average thickness value of the intermediate layer.

根據本發明的一個有利的製造方法,提供基本上純的鈦之中間層,或在中間層的複數層結構的情況中,施加由基本上純的鈦所組成的中間層的層,該層的厚度不大於100μm。 According to an advantageous production method of the invention, an intermediate layer of substantially pure titanium is provided, or in the case of a multi-layer structure of an intermediate layer, a layer of an intermediate layer consisting of substantially pure titanium is applied, the The thickness is not more than 100μm.

根據本發明的一個有利的製造方法,提供鈦-銅之中間層,或在中間層的複數層結構的情況中,施加由基本上純銅所組成的中間層,或施加由基本上銅和鈦所組成的中間層,該等層的厚度不大於500μm。由於銅的可延性的緣故,因此吾人可施加較基本上純的鈦層來得厚的基本上純的銅層或銅-鈦層,而不會致使所施加的層的分層。 According to an advantageous production method of the invention, an intermediate layer of titanium-copper is provided, or in the case of a multilayer structure of the intermediate layer, an intermediate layer consisting of substantially pure copper is applied, or an intermediate layer composed of substantially copper and titanium is applied. Composed of intermediate layers, the thickness of these layers is not greater than 500μm. Due to the ductility of copper, one can apply thicker layers of substantially pure copper or copper-titanium than layers of substantially pure titanium without delamination of the applied layer.

製造複合體的本發明的進一步的方法,實現可靠地且在可靠的方法中闡述上方有關於本發明的組成的優點。此外,本發明的前面所描述的有利的具體實例對於本發明的方法來說,同樣是有利的。 A further method according to the invention for producing a composite body achieves the advantages stated above with respect to the composition according to the invention reliably and in a reliable method. Furthermore, the previously described advantageous embodiments of the invention are also advantageous for the method of the invention.

實施例: Example:

對於本發明的實施例來說,兩個圓柱形的TiB2胚料係藉由放電電漿燒結來製造,並且接著加工成型成直徑為57mm並且高度為12mm。在進行背面鑄造之前,在每一種情況中,係藉由冷氣體噴塗將第一鈦中間層塗覆至TiB2胚料的表面上。以下的冷氣體噴塗製程的參數,係用於第一中間層(請參見表1):

Figure 108113203-A0305-02-0019-1
For the present examples, two cylindrical TiB2 blanks were fabricated by spark plasma sintering and then machined to a diameter of 57 mm and a height of 12 mm. Before backside casting, a first titanium intermediate layer was applied in each case to the surface of the TiB 2 blank by cold gas spraying. The following cold gas spray process parameters are used for the first intermediate layer (see Table 1):
Figure 108113203-A0305-02-0019-1

在藉由冷氣體噴塗來施加第一鈦中間層之後,係藉由冷氣體噴塗來施加第二銅中間層。以下的冷氣體噴塗製程的參數,係用於施加第二中間層(請參見表2):

Figure 108113203-A0305-02-0019-2
After applying the first titanium intermediate layer by cold gas spraying, a second copper intermediate layer is applied by cold gas spraying. The following cold gas spray process parameters were used to apply the second intermediate layer (see Table 2):
Figure 108113203-A0305-02-0019-2

隨後,如下面所描述的,藉由銅來對提供有第一鈦中間層及第 二銅中間層的TiB2胚料進行背面鑄造。塗覆有冷氣體噴塗的第一部分,係以塗覆面朝上的方式放置在石墨圓筒的基底上。石墨圓筒的直徑係>經塗覆的TiB2胚料的直徑,並且同樣具有較高的高度。基本上純的銅的銅部分(稱作「生鐵(pig)」),係放置在TiB2胚料上方的透明空間上。 The TiB2 billet provided with the first intermediate layer of titanium and the second intermediate layer of copper was then back casted by means of copper as described below. The first part, coated with the cold gas spray, was placed on the base of the graphite cylinder with the coated side facing up. The diameter of the graphite cylinder is > the diameter of the coated TiB billet and also has a higher height. The copper portion of substantially pure copper (referred to as "pig") is placed on the transparent space above the TiB2 billet .

隨後,將石墨圓筒引入窯爐中,並且在氫氣環境中將其加熱至900℃。在到達900℃後,對石墨圓筒進一步在氮氣環境中加熱至1150℃的溫度(應注意:高於銅的熔融溫度,其為1085℃)。在到達1150℃後,維持該溫度20分鐘。隨後,將石墨圓筒以1公分/分鐘的速度移出窯爐的熱區外。TiB2-銅之複合材料的冷卻係藉由熔體的定向凝固(directional solidification)來完成,其致使背面鑄造銅的無應力但粗結晶的微觀結構。在冷卻之後,以這種方式用銅進行背面鑄造的TiB2胚料,在形成的過渡區域上方顯示兩種材料(TiB2及銅)之間相當好的連接。以這種方式製造的複合體,在過渡區中不會顯示任何的裂縫或分層。冷卻的緩慢性質也使得介於TiB2胚料與固化的銅背板之間的熱應力最小化。 Subsequently, the graphite cylinder was introduced into the kiln and heated to 900°C in a hydrogen atmosphere. After reaching 900°C, the graphite cylinder was further heated in a nitrogen atmosphere to a temperature of 1150°C (note: above the melting temperature of copper, which is 1085°C). After reaching 1150°C, this temperature was maintained for 20 minutes. Subsequently, the graphite cylinder was moved out of the hot zone of the kiln at a speed of 1 cm/min. Cooling of the TiB2 - copper composite is accomplished by directional solidification of the melt, which results in a stress-free but coarsely crystalline microstructure of the backside cast copper. After cooling, the TiB 2 billet back-cast with copper in this way shows a fairly good connection between the two materials (TiB 2 and copper) above the transition region formed. Composite bodies produced in this way do not show any cracks or delaminations in the transition zone. The slow nature of the cooling also minimizes thermal stress between the TiB2 billet and the solidified copper backplate.

圖1顯示橫向拋光區段(1號樣品,請參見表1)的掃描式電子顯微鏡中的TiB2/銅過渡區。在圖1中,吾人可識別TiB2的第一部分(A,深色區域),其位於圖式的左側;並且可識別由銅所組成的第二部分(C,淺色區域),其位於圖式的右側。第一部分與第二部分的連接在過渡區域的完整區域上方完成,並且沒有明顯的裂縫或缺陷。過渡區域(B)大致上從TiB2的表面朝向銅呈半圓形的形式擴展,並且顯示出約15μm的平均厚度。精確量測過渡區域的層的厚度在此樣品中係困難的,這是因為,由於冷氣體噴塗製程中的層形成及低的層的厚度(與粉末尺寸相比),因此TiB2胚料表面有以中間層不完全的覆蓋。在藉由冷氣體噴塗施加第二銅中間層之後的TiB2胚料表面係顯示於圖2中。藉由冷氣體噴塗施加的中間層的表面積覆蓋率為約50%。即使在進行背 面鑄造之後,原來的胚料表面的覆蓋在橫向拋光區段中仍然明顯,並且在圖1中係清楚可見的。儘管原來為約50%的覆蓋率係相當低的,然而以這樣的方式藉由背面鑄造製造的TiB2-銅接合,顯示銅與TiB2之間完全的連接,而在過渡區域中沒有裂縫或缺陷。 Figure 1 shows the TiB2/copper transition region in a scanning electron microscope of a laterally polished section (Sample No. 1, see Table 1). In Figure 1 , we can identify the first part (A, dark area) of TiB2, which is located on the left side of the diagram; and the second part (C, light area) consisting of copper, which is located in the diagram right side of the formula. The connection of the first part to the second part shall be completed over the complete area of the transition zone and shall be free from visible cracks or defects. The transition region (B) extends approximately in the form of a semicircle from the surface of the TiB 2 towards the copper and exhibits an average thickness of about 15 μm. Accurate measurement of the layer thickness in the transition region was difficult in this sample because, due to the layer formation in the cold gas spray process and the low layer thickness (compared to the powder size), the TiB2 billet surface There is incomplete coverage with the middle layer. The surface of the TiB 2 billet after application of the second copper interlayer by cold gas spraying is shown in FIG. 2 . The surface area coverage of the intermediate layer applied by cold gas spraying is about 50%. Even after backside casting, the coverage of the original stock surface is still evident in the transverse polished sections and is clearly visible in FIG. 1 . Although the original coverage of about 50% is rather low, the TiB2 - copper bond produced by backside casting in this way shows a complete connection between copper and TiB2 with no cracks or cracks in the transition region. defect.

圖3顯示橫向拋光區段的掃描式電子顯微圖中的TiB2/銅過渡區(2號樣品,請參見表1)。在圖3中,位於圖式左側的TiB2的第一部分(A,暗色的)係明顯的,位於圖式右側的第二部分(C,亮色的)係由銅所組成。第一部分與第二部分的連接在過渡區域的完整區域上方完成。過渡區域(B)從TiB2的表面朝向銅擴展,並且展示出約200μm的平均厚度。與1號樣品(圖1及圖2)中施加的中間層相比,由於在2號樣品的情況中施加的中間層係明顯為更厚的,因此TiB2的表面係以中間層完全塗覆的,這在圖3中所示的橫截面也為清楚明確的。 Figure 3 shows the TiB2/copper transition region in a scanning electron micrograph of a laterally polished section (Sample No. 2 , see Table 1). In Fig. 3 , the first part of TiB2 (A, dark) on the left side of the diagram is evident, and the second part (C, bright) on the right side of the diagram is composed of copper. The connection of the first part to the second part is done over the complete area of the transition area. The transition region (B) extends from the surface of TiB 2 towards copper and exhibits an average thickness of about 200 μm. Since the applied intermediate layer was significantly thicker in the case of sample No. 2 compared to the applied intermediate layer in sample No. 1 (Fig. 1 and Fig. 2), the surface of the TiB 2 was completely coated with the intermediate layer Yes, this is also clear in the cross-section shown in Figure 3.

圖4顯示根據DIN EN ISO 6507的1號樣品的過渡區域(B)的顯微硬度測量,並且圖5顯示在1號樣品的由銅(C)所組成的背面鑄造銅第二部分中的顯微硬度測量。背面鑄造第二部分顯示平均值為83 HV0.1的顯微硬度,並且過渡區域顯示平均值為159 HV0.1的顯微硬度。這意指1號樣品的過渡區域的平均硬度比由基本上純的銅所組成的第二部分的平均硬度高90%以上。 Figure 4 shows the microhardness measurement of the transition zone (B) of sample No. 1 according to DIN EN ISO 6507, and Fig. 5 shows the microhardness in the backside cast copper second part of sample No. 1 consisting of copper (C). Microhardness measurement. The back cast second part showed a microhardness of 83 HV0.1 on average and the transition zone showed a microhardness of 159 HV0.1 on average. This means that the average hardness of the transition region of sample No. 1 is more than 90% higher than the average hardness of the second portion consisting of substantially pure copper.

A‧‧‧TiB2的第一部分 A‧‧‧TiB 2 part one

B‧‧‧過渡區域/過渡區 B‧‧‧Transition Area/Transition Area

C‧‧‧由銅所組成的第二部分 C‧‧‧The second part composed of copper

Claims (16)

一種複合體,其包含第一部分和第二部分,及位於該第一部分的表面或表面區與該第二部分的表面或表面區之間並且物質地(materially)接合該第一部分至該第二部分的過渡區域,其中- 該第一部分係由硼化物、混合硼化物陶瓷、摻雜硼化物或摻雜混合硼化物陶瓷所組成,- 該第二部分係由銅或銅合金所組成,及- 該過渡區域包含鈦及銅並且具有>600℃的熔融溫度。 A composite comprising a first part and a second part between a surface or surface region of the first part and a surface or surface region of the second part and materially joining the first part to the second part wherein- the first part consists of a boride, mixed boride ceramic, doped boride or doped mixed boride ceramic,- the second part consists of copper or a copper alloy, and- the The transition region contains titanium and copper and has a melting temperature >600°C. 如申請專利範圍第1項所述之複合體,其中該過渡區域顯示在每種情況中,元素銦、錫、鍺、銀、鈀、鎳、鉑、鈷、錳或金的含量係<5,000ppm。 Composite as claimed in claim 1, wherein the transition region exhibits, in each case, a content of the elements indium, tin, germanium, silver, palladium, nickel, platinum, cobalt, manganese or gold of <5,000 ppm . 如申請專利範圍第1項所述之複合體,其中該第一部分係由TiB2、具有至少50mol%TiB2的以TiB2為主的陶瓷或碳摻雜的TiB2所組成。 The composite body as described in claim 1, wherein the first part is composed of TiB 2 , TiB 2 -based ceramics with at least 50 mol% TiB 2 , or carbon-doped TiB 2 . 如申請專利範圍第1項所述之複合體,其中該過渡區域的厚度係介於5μm和500μm之間。 The composite body as described in claim 1, wherein the thickness of the transition region is between 5 μm and 500 μm. 如申請專利範圍第1項所述之複合體,其中在該過渡區域中的銅的濃度及在該過渡區域中的鈦的濃度,從該第一部分的該表面朝向該第二部分的該表面,均顯示出累進(graduated)濃度曲線。 The composite body as described in claim 1, wherein the concentration of copper in the transition region and the concentration of titanium in the transition region are from the surface of the first part towards the surface of the second part, Both showed graduated concentration curves. 如申請專利範圍第1項所述之複合體,其中該過渡區域中的平均硬度較該第二部分的平均硬度高至少10%。 The composite body according to claim 1, wherein the average hardness in the transition region is at least 10% higher than the average hardness in the second portion. 如申請專利範圍第1項所述之複合體,其中該過渡區域的至少50%顯示冶金連接至該第一部分的該表面及至該第二部分的該表面。 The composite body of claim 1, wherein at least 50% of the transition region exhibits a metallurgical bond to the surface of the first portion and to the surface of the second portion. 如申請專利範圍第1項所述之複合體,其中在該第一部分與該第二部分之間具有拉應力,並且應力方向垂直於藉由該過渡區域連接的該第一部 分的該表面及該第二部分的該表面的情況中,斷裂應力為至少15MPa,其中該斷裂應力係基於該過渡區域的該連接部分。 The composite body as described in item 1 of the scope of the patent application, wherein there is a tensile stress between the first part and the second part, and the stress direction is perpendicular to the first part connected by the transition region In the case of dividing the surface and the surface of the second portion, the fracture stress is at least 15 MPa, wherein the fracture stress is based on the connecting portion of the transition region. 一種製造複合體的方法,該複合體係由第一部分、第二部分及至少一個過渡區域所組成,該過渡區域係形成於該第一部分的表面或表面區與該第二部分的表面或表面區之間,其特徵在於下列步驟:- 由硼化物、以硼化物為主的陶瓷、摻雜硼化物或以摻雜硼化物為主的陶瓷以粉末冶金來製造該第一部分,- 以至少一層包含鈦或鈦和銅的中間層來塗覆該第一部分的至少一個表面區段,- 藉由對已塗覆有銅或銅合金的該中間層的該第一部分的該表面進行背面鑄造(back casting),或藉由對已塗覆有銅或銅合金的該中間層的該第一部分的該表面進行冷氣體噴塗(CGS),來製造該複合體的該第二部分,- 從而形成介於該第一部分與該第二部分之間的過渡區域。 A method of manufacturing a composite body consisting of a first part, a second part and at least one transition region formed between a surface or surface region of the first part and a surface or surface region of the second part between, characterized by the following steps: - manufacturing the first part by powder metallurgy from borides, boride-based ceramics, doped borides or doped boride-based ceramics, - comprising titanium in at least one layer or an intermediate layer of titanium and copper to coat at least one surface section of the first part, - by back casting (back casting) to the surface of the first part which has been coated with the intermediate layer of copper or copper alloy, or by cold gas spraying (CGS) the surface of the first part of the intermediate layer which has been coated with copper or copper alloy, to make the second part of the composite, - thereby forming the intervening and the transition region between this second part. 如申請專利範圍第9項所述之方法,其中該第一部分係由TiB2、碳摻雜的TiB2或具有至少50mol%TiB2的以TiB2為主的陶瓷所製造。 The method of claim 9 , wherein the first part is made of TiB2, carbon - doped TiB2, or a TiB2 - based ceramic having at least 50 mol% TiB2. 如申請專利範圍第9項所述之方法,其中藉由冷氣體噴塗(CGS)或低壓電漿噴塗來施加該中間層。 The method of claim 9, wherein the intermediate layer is applied by cold gas spraying (CGS) or low pressure plasma spraying. 如申請專利範圍第9項所述之方法,其中藉由PVD或CVD或漿料塗覆來施加該中間層。 The method of claim 9, wherein the intermediate layer is applied by PVD or CVD or slurry coating. 如申請專利範圍第9項所述之方法,其中該中間層係以複數層來施加,並且該複數層中間層的個別層可具有不同的組成。 The method according to claim 9, wherein the intermediate layer is applied in a plurality of layers, and the individual layers of the plurality of intermediate layers may have different compositions. 如申請專利範圍第9項至第13項中任一項所述之方法,其中該中間層或該中間層的其中一層塗覆有至少10μm的層厚度。 The method according to any one of claims 9 to 13, wherein the intermediate layer or one of the intermediate layers is coated with a layer thickness of at least 10 μm. 如申請專利範圍第9項所述之方法,其中基本上純的鈦中間層,或在該中間層為複數層結構的情況中,施加由基本上純的鈦所組成的該中間層的其中一層,其中該層的厚度不大於100μm。 The method according to claim 9, wherein an intermediate layer of substantially pure titanium, or in the case of a multi-layer structure of the intermediate layer, one of the intermediate layers consisting of substantially pure titanium is applied , wherein the thickness of the layer is not greater than 100 μm. 如申請專利範圍第9項所述之方法,其中鈦-銅中間層,或在該中間層為複數層結構的情況中,施加由基本上純的銅所組成的該中間層的其中一層或施加由銅或鈦所組成的該中間層的其中一層,其中該層的厚度不大於500μm。 A method as described in claim 9, wherein the titanium-copper interlayer, or in the case of a multi-layer structure, one of the interlayers consisting of substantially pure copper or One of the intermediate layers is composed of copper or titanium, wherein the thickness of the layer is not greater than 500 μm.
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