TWI786178B - Mount, heater having the mount, and deposition apparatus having the heater - Google Patents

Mount, heater having the mount, and deposition apparatus having the heater Download PDF

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TWI786178B
TWI786178B TW107131537A TW107131537A TWI786178B TW I786178 B TWI786178 B TW I786178B TW 107131537 A TW107131537 A TW 107131537A TW 107131537 A TW107131537 A TW 107131537A TW I786178 B TWI786178 B TW I786178B
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main body
heating plate
shaft
gas
heating
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TW107131537A
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Chinese (zh)
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TW201919117A (en
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鄭哲鎬
李範述
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南韓商美科陶瓷科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

支架可以包括：主體，其固定於支撐加熱板的中空軸的端部；氣體供應孔，其貫通該主體配備，用於為了防止該加熱板的發熱體與向該發熱體接入電流的電源線相接合的部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體；及氣體排出孔，其貫通該主體配備，用於從該軸的內部排出該惰性氣體。 The bracket may include: a main body, which is fixed to the end of the hollow shaft supporting the heating plate; a gas supply hole, which is provided through the main body, for preventing the heating element of the heating plate from being connected to the power line that receives current to the heating element. The joined portion is oxidized, cooling the heating plate to supply inert gas to the inside of the shaft; and a gas discharge hole provided through the main body for discharging the inert gas from the inside of the shaft.

Description

支架、包括該支架的加熱器及包括該加熱器的沉積裝置 Support, heater including the support and deposition device including the heater

本發明有關於支架、包括該支架的加熱器及包括該加熱器的沉積裝置，更詳細而言，有關於一種用於固定加熱板的支架、包括該支架的加熱器及包括該加熱器的沉積裝置。 The present invention relates to a support, a heater including the support, and a deposition device including the heater. More specifically, it relates to a support for fixing a heating plate, a heater including the support, and a deposition device including the heater. device.

化學氣相沉積(chemical vapor deposition，CVD)處理作為用於製造半導體元件或平板顯示裝置的處理之一，是藉助於氣體的化學反應而在諸如晶元或玻璃面板(glass panel)的基板的表面形成多樣種類的薄膜的處理。 Chemical vapor deposition (chemical vapor deposition, CVD) process, as one of the processes used to manufacture semiconductor elements or flat panel display devices, is deposited on the surface of a substrate such as a wafer or a glass panel by means of a chemical reaction of gas. Process for forming various types of thin films.

執行該化學氣相沉積處理所需的處理裝置，包括在腔室內部加熱基板的加熱器。該加熱器包括加熱板、支撐該加熱板的軸及固定於該軸的端部的支架。 The processing apparatus required to perform this chemical vapor deposition process includes a heater for heating the substrate inside the chamber. The heater includes a heating plate, a shaft supporting the heating plate and a bracket fixed at the end of the shaft.

在該化學氣相沉積處理中，該加熱器為了該基板的加熱而加熱到較高的溫度。由於該較高的溫度，該加熱板的發熱體與向該發熱體接入電流的電源線相接合的部位可能會被氧化。因此，該加熱器的耐久性會低下。 During the chemical vapor deposition process, the heater is heated to a higher temperature for heating the substrate. Due to the high temperature, the heating element of the heating plate is likely to be oxidized at a portion where the heating element is joined to a power line that supplies current to the heating element. Therefore, the durability of the heater decreases.

另外，在該軸與該支架之間，為了密封而具備O型環。由於該較高的溫度，該O型環會因熱而損傷。因此，在該軸與該支架之間可能會發生洩漏。 In addition, an O-ring is provided between the shaft and the bracket for sealing. Due to the higher temperature, the O-ring can be damaged by heat. Therefore, leakage may occur between the shaft and the bracket.

本發明提供一種支架，能夠防止加熱板的發熱體與向該發熱體接入電流的電源線相接合的部位被氧化，防止配備於軸與支架之間的O型環的熱損傷。 The present invention provides a bracket capable of preventing oxidation of the junction of a heating element of a heating plate and a power line that supplies current to the heating element, and preventing thermal damage of an O-ring arranged between a shaft and the bracket.

本發明提供一種包括該支架的加熱器。 The invention provides a heater including the bracket.

本發明提供一種包括該加熱器的沉積裝置。 The invention provides a deposition device including the heater.

本發明的支架可以包括：主體，其固定於支撐加熱板的中空軸的端部；氣體供應孔，其貫通該主體配備，用於為了防止該加熱板的發熱體與向該發熱體接入電流的電源線相接合的部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體；及氣體排出孔，其貫通該主體配備，用於從該軸的內部排出該惰性氣體。 The bracket of the present invention may include: a main body, which is fixed to the end of the hollow shaft supporting the heating plate; a gas supply hole, which is provided through the main body, and is used to prevent the heating element of the heating plate from being connected to the heating element. The part where the power line is joined is oxidized, the heating plate is cooled to supply inert gas to the inside of the shaft; and a gas discharge hole is provided through the main body to discharge the inert gas from the inside of the shaft.

根據本發明的一個實施例，該支架可以進一步包括：供應管，其與該氣體供應孔連接，向該加熱板延長，用於與該加熱板鄰接地供應該惰性氣體。 According to an embodiment of the present invention, the bracket may further include: a supply pipe connected to the gas supply hole and extending toward the heating plate for supplying the inert gas adjacent to the heating plate.

根據本發明的一個實施例，該支架可以進一步包括：冷卻管線，其配備得從該主體的內部延長至該主體的上部面，用於向該主體提供冷卻流體，冷卻該主體，從而防止配備於該軸與該主體之間的O型環劣化。 According to an embodiment of the present invention, the bracket may further include: a cooling line provided extending from the interior of the main body to the upper face of the main body for supplying cooling fluid to the main body to cool the main body so as to prevent the The O-ring between the shaft and the body deteriorates.

本發明的加熱器可以包括：加熱板，其支撐基板，內置發熱體，該發熱體用於藉助藉由接合的電源線而接入的電流來發熱，加熱該基板；中空軸，其支撐該加熱板；及支架，其由主體、氣體供應孔及氣體排出孔構成，該主體固定於該軸的端部，該氣體供應孔貫通該主體配備，用於為了防止該加熱 板的發熱體與該電源線的接合部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體，該氣體排出孔貫通該主體配備，用於從該軸的內部排出該惰性氣體。 The heater of the present invention may include: a heating plate, which supports the substrate, and has a built-in heating body for heating the substrate by means of an electric current connected through a bonded power line; a hollow shaft, which supports the heating element. plate; and a bracket consisting of a main body fixed to the end of the shaft, a gas supply hole and a gas discharge hole provided through the main body for preventing the heating The heating element of the plate is oxidized at the junction of the power line, cooling the heating plate and supplying inert gas to the inside of the shaft, and the gas discharge hole is provided through the main body to discharge the inert gas from the inside of the shaft.

本發明的沉積裝置可以包括：處理腔室，其與外部密閉，對沉積對象基板執行化學氣相沉積處理；噴頭，其在該處理腔室的上端噴射反應氣體；電漿體電極，其誘導藉由該噴頭而噴射的反應氣體的電漿體反應；及加熱器，其配備於與該噴頭相向的該處理腔室的下部，支撐、加熱該基板；該加熱器包括：加熱板，其支撐基板，內置發熱體，該發熱體用於藉助藉由接合的電源線而接入的電流來發熱，加熱該基板；中空軸，其支撐該加熱板；及支架，其由主體、氣體供應孔及氣體排出孔構成，該主體固定於該軸的端部，該氣體供應孔貫通該主體配備，用於為了防止該加熱板的發熱體與該電源線的接合部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體，該氣體排出孔貫通該主體配備，用於從該軸的內部排出該惰性氣體。 The deposition apparatus of the present invention may include: a processing chamber, which is sealed from the outside, and performs chemical vapor deposition processing on a substrate to be deposited; a shower head, which sprays a reaction gas at the upper end of the processing chamber; a plasma electrode, which induces Plasma reaction of the reaction gas injected by the shower head; and a heater, which is installed in the lower part of the processing chamber facing the shower head, supports and heats the substrate; the heater includes: a heating plate, which supports the substrate , a built-in heating body, which is used to heat the substrate by means of electric current connected through the bonded power line; a hollow shaft, which supports the heating plate; and a bracket, which consists of a main body, a gas supply hole and a gas The main body is fixed on the end of the shaft, and the gas supply hole is provided through the main body, which is used to supply air to the heating plate in order to prevent the junction of the heating element of the heating plate and the power line from being oxidized and to cool the heating plate. The inside of the shaft is supplied with inert gas, and the gas discharge hole is provided through the main body for discharging the inert gas from the inside of the shaft.

根據本發明的一個實施例，該支架可以固定於該處理腔室。 According to an embodiment of the present invention, the bracket can be fixed to the processing chamber.

本發明的支架可以藉由主體具備的氣體供應孔和氣體排出孔，向軸的內部供應惰性氣體及排出。因此，能夠防止加熱板的發熱體與電源線相接合的部位被氧化，冷卻該加熱板。 The holder of the present invention can supply and discharge an inert gas to the inside of the shaft through the gas supply hole and the gas discharge hole provided in the main body. Therefore, it is possible to cool the heating plate while preventing the portion where the heating element of the heating plate is joined to the power line from being oxidized.

另外，該支架的與該氣體供應孔連接的供應管可以朝向該加熱板延長。因此，可以與該加熱板鄰接地供應該惰性氣體。因此，可以提高該接合部位氧化防止效果和該加熱板冷卻效果。 In addition, a supply pipe of the bracket connected to the gas supply hole may be extended toward the heating plate. Thus, the inert gas can be supplied adjacent to the heating plate. Therefore, the effect of preventing oxidation of the junction and the effect of cooling the heating plate can be enhanced.

而且，可以藉由該主體具備的冷卻管線，冷卻該主體。因此，可以防止配備於支撐加熱板的軸與該主體之間的O型環劣化。因此，可以防止藉由該軸與該主體之間發生洩漏。 Moreover, the main body can be cooled by the cooling pipeline provided on the main body. Therefore, the O-ring provided between the shaft supporting the heating plate and the main body can be prevented from deteriorating. Therefore, it is possible to prevent leakage from occurring between the shaft and the main body.

本發明的加熱器可以防止該加熱板的發熱體與該電源線相接合的部位被氧化，防止該O型環的損傷。因此，可以防止該加熱器的損傷，提高耐久性。另外，可以減小包括該加熱器的沉積裝置的維護費用。 The heater of the present invention can prevent the part where the heating element of the heating plate is connected with the power line from being oxidized, and prevent the O-ring from being damaged. Therefore, damage to the heater can be prevented and durability can be improved. In addition, maintenance costs of a deposition apparatus including the heater can be reduced.

10、210:加熱板 10, 210: heating plate

100:支架 100: Bracket

110:主體 110: subject

12、212:發熱體 12, 212: heating element

120:氣體供應孔 120: gas supply hole

130:氣體排出孔 130: gas discharge hole

14、214:接地電極 14, 214: grounding electrode

140:供應管 140: supply pipe

150:冷卻管線 150: Cooling pipeline

16、216:電源線 16, 216: power cord

18、218:接地線 18, 218: ground wire

20、220:軸 20, 220: axis

200:加熱器 200: heater

30、230:O型環 30, 230: O-ring

300:沉積裝置 300: deposition device

310:處理腔室 310: processing chamber

320:氣體供應部 320: Gas supply department

330:噴頭 330: Nozzle

第1圖是用於說明本發明一個實施例的支架的概略性剖面圖。 Fig. 1 is a schematic sectional view illustrating a stent according to an embodiment of the present invention.

第2圖是用於說明本發明一個實施例的加熱器的概略性剖面圖。 Fig. 2 is a schematic sectional view illustrating a heater according to an embodiment of the present invention.

第3圖是用於說明本發明一個實施例的沉積裝置的概略性剖面圖。 Fig. 3 is a schematic cross-sectional view of a deposition apparatus for explaining an embodiment of the present invention.

下面參照圖式，對本發明實施例的支架、包括該支架的加熱器及包括該加熱器的沉積裝置進行詳細說明。本發明可以施加多樣的變更，可以具有多種形態，在圖式中例示性圖示特定實施例並在正文中詳細說明。但是，這並非要將本發明限定於特定的揭露形態，應理解為包括本發明的思想及技術範圍內包含的所有變更、等同物以及替代物。在說明各圖式的同時，對類似的構成要素使用了類似的圖式標記。在圖式中，結構物的尺寸為了有助於本發明的明確性而比實際放大進行圖示。 The support, the heater including the support and the deposition apparatus including the heater according to the embodiment of the present invention will be described in detail below with reference to the drawings. The present invention can be modified variously and has various forms, and specific embodiments are shown as examples in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, and it should be understood that all changes, equivalents, and substitutions included within the idea and technical scope of the present invention are included. When describing each drawing, similar drawing symbols are used for similar constituent elements. In the drawings, the dimensions of the structures are shown larger than actual in order to contribute to clarity of the present invention.

第一、第二等術語可以用於說明多樣的構成要素，但該構成要素不由該術語所限定。該術語只用於將一個構成要素區別於其他構成要素的目的。例如，在不超出本發明的權利範圍的同時，第一構成要素可以命名為第二構成要素，類似地，第二構成要素也可以命名為第一構成要素。 Terms such as first and second may be used to describe various constituent elements, but the constituent elements are not limited by the terms. The term is used only for the purpose of distinguishing one constituent element from other constituent elements. For example, without exceeding the scope of rights of the present invention, a first constituent element can be named as a second constituent element, and similarly, a second constituent element can also be named as a first constituent element.

本申請中使用的術語只用於說明特定的實施例，並非要限定本發明之意。只要在文理上未明確表現不同，單數的表達也包括複數的表達。在本申請中，「包括」或「具有」等術語應理解為是要指定說明書上記載的特徵、數字、步驟、動作、構成要素、部件或他們組合的存在，而非預先排出一個或其以上其他特徵或數字、步驟、動作、構成要素、部件或他們組合的存在或附加可能性。 The terms used in this application are only used to describe specific embodiments, and are not intended to limit the meaning of the present invention. Expressions in the singular include expressions in the plural as long as there is no grammatical difference. In this application, terms such as "comprising" or "having" should be understood as specifying the existence of features, numbers, steps, actions, constituent elements, parts or their combinations described in the specification, rather than pre-disposing one or more The existence or additional possibility of other features or numbers, steps, actions, constituent elements, parts or their combination.

只要未不同地定義，包括技術性或科學性術語在內，在此使用的所有術語具有與本發明所屬技術領域的具有通常知識者一般理解的內容相同的意義。諸如一般使用的詞典定義的術語，應解釋為具有與相關技術的文理上具有的意義一致的意義，只要在本申請中未明確定義，不得解釋為理想性地或過度形式上的意義。 As long as they are not defined differently, all terms used herein, including technical or scientific terms, have the same meaning as those generally understood by those having ordinary knowledge in the technical field to which the present invention belongs. Terms such as those defined by commonly used dictionaries should be interpreted as having meanings consistent with the literal meanings of related technologies, and should not be interpreted as ideal or excessive formal meanings as long as they are not clearly defined in this application.

第1圖是用於說明本發明一個實施例的支架的概略性剖面圖。 Fig. 1 is a schematic sectional view illustrating a stent according to an embodiment of the present invention.

如果參照第1圖，支架100固定於支撐加熱板10的中空的軸20端部，將加熱板10和軸20固定於執行沉積處理的處理腔室(圖上未示出)。 Referring to FIG. 1, the holder 100 is fixed to the end of the hollow shaft 20 supporting the heating plate 10, and the heating plate 10 and the shaft 20 are fixed to a processing chamber (not shown) for performing deposition processing.

加熱板10支撐基板(圖上未示出)，可以包括發熱體12、接地電極14、電源線16及接地線18。 The heating plate 10 supports a substrate (not shown in the figure), and may include a heating element 12 , a ground electrode 14 , a power line 16 and a ground line 18 .

加熱板10具有平板形態，可以以電氣絕緣體構成。加熱板10可以由針對在該處理腔室內部執行的沉積處理具有優秀耐蝕性及電氣絕緣性的陶瓷或石英(quartz)材質形成。作為該陶瓷的示例，可以為Al2O3、Y2O3、Al2O3/Y2O3、ZrO2、AlC、TiN、AlN、TiC、MgO、CaO、CeO2、TiO2、BxCy、BN、SiO2、SiC、YAG、Mullite、AlF3等。他們可以單獨或複合使用。 The heating plate 10 has a flat plate form and may be formed of an electrical insulator. The heating plate 10 may be formed of a ceramic or quartz material having excellent corrosion resistance and electrical insulation for the deposition process performed inside the processing chamber. Examples of such ceramics include Al 2 O 3 , Y 2 O 3 , Al 2 O 3 /Y 2 O 3 , ZrO 2 , AlC, TiN, AlN, TiC, MgO, CaO, CeO 2 , TiO 2 , BxCy , BN, SiO 2 , SiC, YAG, Mullite, AlF 3 etc. They can be used alone or in combination.

發熱體12配備於加熱板10的內部，藉助於從外部電源P接入的電流而發生熱，加熱該基板。發熱體12可以在加熱板10中排列成既定圖案形狀。發熱體12包括金屬材質。作為該金屬的示例，可以為鎢(W)、鉬(Mo)，鉭(Ta)、鈦(Ti)或他們的合金、鐵-鉻(Fe-Cr)合金、鎳-鉻(Ni-Cr)合金等。 The heating element 12 is provided inside the heating plate 10, and generates heat by an electric current supplied from an external power supply P to heat the substrate. The heating elements 12 may be arranged in a predetermined pattern on the heating plate 10 . The heating element 12 is made of metal. Examples of the metal include tungsten (W), molybdenum (Mo), tantalum (Ta), titanium (Ti) or their alloys, iron-chromium (Fe-Cr) alloy, nickel-chromium (Ni-Cr) Alloy etc.

接地電極14配置於加熱板10的內部，使該沉積處理進行期間形成的電漿體的一部分粒子帶電而形成接地電流。因此，在執行該沉積處理的處理腔室內部，始終保持既定強度的電漿體(plasma)。 The ground electrode 14 is disposed inside the heating plate 10 , and charges some particles of the plasma formed during the deposition process to form a ground current. Therefore, inside the processing chamber where the deposition processing is performed, plasma (plasma) of a predetermined intensity is always maintained.

發熱體12藉由電源線16而與外部的電源P連接，接地電極14藉由接地線18而接地。在接地線18的端部可以配備有用於固定接地線18端部的接地結構物(圖上未示出)。 The heating element 12 is connected to an external power source P through a power line 16 , and the ground electrode 14 is grounded through a ground line 18 . The end of the ground wire 18 may be provided with a ground structure (not shown) for fixing the end of the ground wire 18 .

支架100可以包括主體110、氣體供應孔120、氣體排出孔130、供應管140及冷卻管線150。 The bracket 100 may include a main body 110 , a gas supply hole 120 , a gas discharge hole 130 , a supply pipe 140 and a cooling line 150 .

主體110固定於支撐加熱板10的中空軸20的端部。例如，加熱板10可以固定於軸20的上端部，主體110可以固定於軸20的下端部。在軸20與主體110之間，可以為了密封而配備有O型環30。 The main body 110 is fixed to the end of the hollow shaft 20 supporting the heating plate 10 . For example, the heating plate 10 may be fixed to the upper end of the shaft 20 , and the main body 110 may be fixed to the lower end of the shaft 20 . An O-ring 30 may be provided for sealing between the shaft 20 and the main body 110 .

主體110可以具有大致圓柱形狀。主體110為了與軸20穩定地固定，主體110的直徑可以大於軸20的直徑。 The main body 110 may have a substantially cylindrical shape. In order to stably fix the main body 110 to the shaft 20 , the diameter of the main body 110 may be larger than the diameter of the shaft 20 .

主體110可以由鋁材質或不鏽鋼材質構成。 The main body 110 can be made of aluminum or stainless steel.

氣體供應孔120及氣體排出孔130可以配備得貫通主體110的上下。 The gas supply hole 120 and the gas discharge hole 130 may be provided through the upper and lower sides of the main body 110 .

藉由氣體供應孔120，惰性氣體可以供應到中空的軸20內部。作為該惰性氣體的示例，可以為氦氣、氮氣等。 Through the gas supply hole 120 , an inert gas can be supplied to the inside of the hollow shaft 20 . Examples of the inert gas include helium, nitrogen, and the like.

為了執行該沉積處理，即使在發熱體12發生高溫的熱，由於該惰性氣體，也可以防止發熱體12與電源線16相接合的部位被氧化。由於防止發熱體12與電源線16的接合部位被氧化，因而可以提高加熱板10的耐久性。 In order to perform this deposition process, even if high-temperature heat is generated in the heat generating body 12, the portion where the heat generating body 12 is joined to the power line 16 can be prevented from being oxidized due to the inert gas. The durability of the heating plate 10 can be improved by preventing oxidation of the joining portion between the heating element 12 and the power supply line 16 .

另外，該惰性氣體的溫度低於該發熱體12的溫度，因而該惰性氣體可以冷卻加熱板10。 In addition, the temperature of the inert gas is lower than that of the heating element 12 , so the inert gas can cool the heating plate 10 .

氣體排出孔130可以將藉由氣體供應孔120供應的惰性氣體從中空的軸20排出。 The gas discharge hole 130 may discharge the inert gas supplied through the gas supply hole 120 from the hollow shaft 20 .

該惰性氣體藉由氣體供應孔120供應，藉由氣體排出孔130排出，因而在軸20的內部空間，該惰性氣體不被加熱，可以保持既定溫度。因此，該惰性氣體可以持續冷卻加熱板10。 The inert gas is supplied through the gas supply hole 120 and discharged through the gas discharge hole 130 , so that the inert gas can maintain a predetermined temperature in the inner space of the shaft 20 without being heated. Therefore, the inert gas can continuously cool the heating plate 10 .

供應管140配備於軸20的內部，與氣體供應孔120連接，可以向加熱板10的下部面延長。因此，藉由氣體供應孔120供應的惰性氣體可以與加熱板10鄰接地供應。即，由於供應管140，該惰性氣體可以鄰接發熱體12與電源線16接合部位地供應。因此，可以進一步提高該惰性氣體防止發熱體12與電源線16接合部位被氧化的效果。另外，也可以進一步提高該惰性氣體冷卻加熱板10的效果。 The supply pipe 140 is provided inside the shaft 20 , is connected to the gas supply hole 120 , and can extend toward the lower surface of the heating plate 10 . Accordingly, the inert gas supplied through the gas supply hole 120 may be supplied adjacent to the heating plate 10 . That is, due to the supply pipe 140 , the inert gas can be supplied adjacent to the joining portion of the heat generating body 12 and the power line 16 . Therefore, the effect of the inert gas to prevent oxidation of the joining portion of the heating element 12 and the power line 16 can be further enhanced. In addition, the effect of cooling the heating plate 10 by the inert gas can be further enhanced.

冷卻管線150配備得從主體110的內部延長至主體110的上部面。冷卻管線150使冷卻流體循環，冷卻主體110。作為該冷卻流體的示例，可以為水、空氣、氣體等。隨著主體110被冷卻，藉由熱傳導，配備於軸20與主體110之間的O型環30也會被冷卻。特別是冷卻管線150延長至主體110的上部面，因而O型環30可以更有效地冷卻。因此，可以防止O型環30因加熱板10的熱而劣化。由於可以防止O型環30的損傷，因而可以防止在軸20與主體110之間發生洩漏。 The cooling line 150 is provided extending from the inside of the main body 110 to the upper face of the main body 110 . The cooling line 150 circulates a cooling fluid to cool the main body 110 . Examples of the cooling fluid include water, air, gas, and the like. As the main body 110 is cooled, the O-ring 30 disposed between the shaft 20 and the main body 110 is also cooled by heat conduction. In particular, the cooling line 150 is extended to the upper face of the main body 110, so that the O-ring 30 can be cooled more effectively. Therefore, it is possible to prevent the O-ring 30 from deteriorating due to the heat of the heating plate 10 . Since damage to the O-ring 30 can be prevented, leakage between the shaft 20 and the main body 110 can be prevented.

另一方面，電源線16及接地線18可以貫通主體110配備。特別是固定接地線18端部的該接地結構物，也可以固定於主體110。 On the other hand, the power wire 16 and the ground wire 18 can be provided through the main body 110 . In particular, the ground structure for fixing the end of the ground wire 18 may be fixed to the main body 110 .

第2圖是用於說明本發明一個實施例的加熱器的概略性剖面圖。 Fig. 2 is a schematic sectional view illustrating a heater according to an embodiment of the present invention.

如果參照第2圖，加熱器200用於在執行沉積處理的處理腔室中加熱基板，包括加熱板210、軸220、O型環230及支架100。 Referring to FIG. 2 , the heater 200 is used to heat a substrate in a processing chamber for performing a deposition process, and includes a heating plate 210 , a shaft 220 , an O-ring 230 and a holder 100 .

加熱板210支撐該基板，可以包括發熱體212、接地電極214、電源線216及接地線218。 The heating plate 210 supports the substrate and may include a heating element 212 , a ground electrode 214 , a power line 216 and a ground line 218 .

加熱板210具有平板形態，可以由電氣絕緣體構成。加熱板210可以由對在該處理腔室內部執行的沉積處理具有優秀耐蝕性及電氣絕緣性的陶瓷或石英(quartz)材質形成。作為該陶瓷的示例，可以為Al2O3、Y2O3、Al2O3/Y2O3、ZrO2、AlC、TiN、AlN、TiC、MgO、CaO、CeO2、TiO2、BxCy、BN、SiO2、SiC、YAG、Mullite、AlF3等。他們可以單獨或複合使用。 The heating plate 210 has a flat plate shape and may be formed of an electrical insulator. The heating plate 210 may be formed of a ceramic or quartz material having excellent corrosion resistance and electrical insulation for the deposition process performed inside the processing chamber. Examples of such ceramics include Al 2 O 3 , Y 2 O 3 , Al 2 O 3 /Y 2 O 3 , ZrO 2 , AlC, TiN, AlN, TiC, MgO, CaO, CeO 2 , TiO 2 , BxCy , BN, SiO 2 , SiC, YAG, Mullite, AlF 3 etc. They can be used alone or in combination.

發熱體212配備於加熱板210的內部，因從外部電源P接入的電流而發生熱，加熱該基板。發熱體212可以在加熱板210中排列成既定圖案形狀。發熱體212包括金屬材質。作為該金屬的示例，可以為鎢(W)、鉬(Mo)，鉭(Ta)、鈦(Ti)或他們的合金、鐵-鉻(Fe-Cr)合金、鎳-鉻(Ni-Cr)合金等。 The heating element 212 is provided inside the heating plate 210, and generates heat by an electric current supplied from an external power supply P to heat the substrate. The heating elements 212 may be arranged in a predetermined pattern on the heating plate 210 . The heating element 212 is made of metal. Examples of the metal include tungsten (W), molybdenum (Mo), tantalum (Ta), titanium (Ti) or their alloys, iron-chromium (Fe-Cr) alloy, nickel-chromium (Ni-Cr) Alloy etc.

接地電極214配置於加熱板210的內部，使在該沉積處理進行期間形成的電漿體的一部分粒子帶電，形成接地電流。因此，在執行該沉積處理的處理腔室內部，始終保持既定強度的電漿體(plasma)。 The ground electrode 214 is disposed inside the heating plate 210 and charges some particles of the plasma formed during the deposition process to form a ground current. Therefore, inside the processing chamber where the deposition processing is performed, plasma (plasma) of a predetermined intensity is always maintained.

發熱體212藉由電源線216而與外部電源P連接，接地電極214藉由接地線218而接地。在接地線218的端部，可以配備有用於固定接地線218的接地結構物(圖上未示出)。此時，電源線216及接地線218可以分別貫通支架100的 主體110配備。特別是固定接地線218的該接地結構物，也可以固定於支架100的主體110。 The heating element 212 is connected to an external power source P through a power line 216 , and the ground electrode 214 is grounded through a ground line 218 . At the end of the ground wire 218, a ground structure (not shown) for fixing the ground wire 218 may be provided. At this time, the power line 216 and the grounding line 218 can pass through the support 100 respectively. Main body 110 equipped. In particular, the ground structure for fixing the ground wire 218 may also be fixed to the main body 110 of the bracket 100 .

軸220具有大致中空的圓柱形狀，支撐加熱板210。軸220的上端部支撐加熱板210的下部面。軸220與加熱板210可以藉助於焊接或另外的連結構件而固定。 The shaft 220 has a substantially hollow cylindrical shape and supports the heating plate 210 . The upper end of the shaft 220 supports the lower surface of the heating plate 210 . The shaft 220 and the heating plate 210 may be fixed by means of welding or other connecting members.

另外，加熱板210的電源線216及接地線218可以貫通軸220地配置。因此，軸220可以在該沉積處理中，防止電源線216及接地線218損傷。 In addition, the power line 216 and the ground line 218 of the heating plate 210 may be arranged so as to pass through the shaft 220 . Therefore, the shaft 220 can prevent the power line 216 and the ground line 218 from being damaged during the deposition process.

O型環230配備於軸220與支架100的主體110之間，對軸220與支架100的主體110之間進行密封。因此，可以防止藉由軸220與支架100的主體110之間而發生洩漏。 The O-ring 230 is disposed between the shaft 220 and the main body 110 of the bracket 100 to seal between the shaft 220 and the main body 110 of the bracket 100 . Therefore, it is possible to prevent leakage from occurring between the shaft 220 and the main body 110 of the bracket 100 .

支架100固定於軸220的下端部，將加熱板210和軸220固定於該處理腔室。支架100可以藉助於另外的連結構件、焊接等而與軸220固定。 The bracket 100 is fixed to the lower end of the shaft 220 to fix the heating plate 210 and the shaft 220 to the processing chamber. The bracket 100 may be fixed with the shaft 220 by means of another connecting member, welding, or the like.

對支架100的具體說明由於與參照第1圖的對支架100的說明實質上相同，因而省略。 A detailed description of the stent 100 is substantially the same as the description of the stent 100 with reference to FIG. 1 , and thus will be omitted.

加熱器200可以防止加熱板210的發熱體212與電源線216相接合的部位被氧化，防止O型環230熱損傷。因此，能夠提高加熱器200的耐久性，延長壽命。 The heater 200 can prevent the part where the heating element 212 of the heating plate 210 is connected with the power line 216 from being oxidized, and prevent the O-ring 230 from being thermally damaged. Therefore, the durability of the heater 200 can be improved and the life can be extended.

第3圖是用於說明本發明一個實施例的沉積裝置的概略性剖面圖。 Fig. 3 is a schematic cross-sectional view of a deposition apparatus for explaining an embodiment of the present invention.

如果參照第3圖，沉積裝置300包括處理腔室310、氣體供應部320、噴頭330、電漿體電極340及加熱器200。 Referring to FIG. 3 , the deposition apparatus 300 includes a processing chamber 310 , a gas supply part 320 , a shower head 330 , a plasma electrode 340 and a heater 200 .

處理腔室310容納基板(圖上未示出)，提供用於對該基板執行沉積處理的空間。作為該沉積處理的示例，可以為化學氣相沉積處理。 The processing chamber 310 accommodates a substrate (not shown in the drawing), providing a space for performing a deposition process on the substrate. As an example of this deposition process, there may be chemical vapor deposition process.

處理腔室310密閉得與外部環境隔絕，形成得具有既定真空度，可以使該沉積處理的缺陷實現最小化。處理腔室310可以與用於移送該基板的負載鎖定腔室或基板移送手段連接。 The processing chamber 310 is airtightly isolated from the external environment and formed with a predetermined vacuum degree, which can minimize defects in the deposition process. The processing chamber 310 may be connected to a load lock chamber or a substrate transfer means for transferring the substrate.

氣體供應部320與處理腔室310的上部面連接，將加工該基板所需的處理氣體供應到處理腔室310內部。 The gas supply unit 320 is connected to the upper surface of the processing chamber 310 , and supplies the processing gas necessary for processing the substrate into the processing chamber 310 .

噴頭330配備於處理腔室310的內側上部，將該處理氣體均一地提供給被加熱器200支撐的基板。 The shower head 330 is provided on the inner upper portion of the processing chamber 310 , and uniformly supplies the processing gas to the substrate supported by the heater 200 .

電漿體電極340與噴頭330連接，向該處理氣體接入高電壓，將該處理氣體變換成電漿體狀態。 The plasma electrode 340 is connected to the shower head 330, and a high voltage is applied to the processing gas to transform the processing gas into a plasma state.

雖然未圖示，但還可以包括氣體排出部，其與處理腔室310的下部連接，從處理腔室310排出該處理氣體。在該氣體排出部可以還附著有真空泵。 Although not shown in the figure, a gas discharge unit connected to the lower portion of the processing chamber 310 may be included to discharge the processing gas from the processing chamber 310 . A vacuum pump may also be attached to the gas discharge part.

加熱器200配備於與噴頭330相向的處理腔室310的下部，支撐並加熱該基板。在加熱的該基板的上面，該反應氣體在反應的同時，在該基板上沉積薄膜。此時，該基板被加熱的溫度會因沉積的薄膜的種類而異。 The heater 200 is provided at the lower portion of the processing chamber 310 facing the shower head 330, and supports and heats the substrate. On top of the heated substrate, the reactive gases react while depositing a thin film on the substrate. At this time, the temperature at which the substrate is heated varies depending on the kind of deposited thin film.

對加熱器200的具體說明與參照第2圖的加熱器200實質上相同，因而省略。 A specific description of the heater 200 is substantially the same as that of the heater 200 referring to FIG. 2 , and thus will be omitted.

由於能夠防止加熱板210的發熱體212與電源線216相接合的部位被氧化，防止O型環230熱損傷，因而可以提高加熱器200的耐久性，延長壽命。因此，可以減少包括加熱器200的沉積裝置300的維護費用。 Oxygen ring 230 can be prevented from being oxidized at the junction of heating element 212 and power line 216 of heating plate 210 , thus the durability of heater 200 can be improved and the service life can be extended. Accordingly, maintenance costs of the deposition apparatus 300 including the heater 200 may be reduced.

工業實用性 Industrial Applicability

綜上所述，本發明的支架可以防止加熱板的發熱體與電源線相接合的部位被氧化，防止O型環熱損傷。因此，可以提高包括該支架的加熱器的耐久性，延長壽命。另外，可以減少包括該加熱器的沉積裝置的維護費用。 To sum up, the bracket of the present invention can prevent the oxidation of the part where the heating element of the heating plate is connected with the power line, and prevent the thermal damage of the O-ring. Therefore, the durability of the heater including the bracket can be improved, and the life can be extended. In addition, maintenance costs of a deposition apparatus including the heater can be reduced.

以上參照本發明較佳實施例進行了說明，但相應技術領域的具有通常知識者可以理解，在不超出申請專利範圍中記載的本發明思想及領域的範圍內，可以多樣地修訂及變更本發明。 The above has been described with reference to the preferred embodiments of the present invention, but those with ordinary knowledge in the corresponding technical field can understand that the present invention can be amended and changed in various ways within the scope of the present invention thought and field recorded in the scope of the patent application .

10:加熱板 10: Heating plate

100:支架 100: Bracket

110:主體 110: subject

12:發熱體 12: Heating body

120:氣體供應孔 120: gas supply hole

130:氣體排出孔 130: gas discharge hole

14:接地電極 14: Ground electrode

140:供應管 140: supply pipe

150:冷卻管線 150: Cooling pipeline

16:電源線 16: Power cord

18:接地線 18: Ground wire

20:軸 20: axis

30:O型環 30: O-ring

Claims (5)

一種支架，其包括：主體，其固定於支撐加熱板的中空軸的端部；氣體供應孔，其貫通該主體配備，用於為了防止該加熱板的發熱體與向該發熱體接入電流的電源線相接合的部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體；氣體排出孔，其貫通該主體配備，用於從該軸的內部排出該惰性氣體；及冷卻管線，其配備得從該主體的內部延長至該主體的上部面，向該主體提供冷卻流體以冷卻該主體，從而防止配備於該軸與該主體之間的O型環劣化。 A bracket, which includes: a main body, which is fixed to the end of a hollow shaft supporting a heating plate; a gas supply hole, which is provided through the main body, and is used to prevent the heating element of the heating plate from being connected to the heating element. The portion where the power line is joined is oxidized, cooling the heating plate to supply inert gas to the inside of the shaft; a gas discharge hole, which is provided through the main body, for discharging the inert gas from the inside of the shaft; and a cooling line, which Provided to extend from the inside of the main body to the upper face of the main body, a cooling fluid is supplied to the main body to cool the main body, thereby preventing deterioration of an O-ring provided between the shaft and the main body. 如申請專利範圍第1項所述之支架，其更包括：供應管，其與該氣體供應孔連接，向該加熱板延長，用於與該加熱板鄰接地供應該惰性氣體。 The bracket as described in item 1 of the scope of the patent application further includes: a supply pipe connected to the gas supply hole and extending toward the heating plate for supplying the inert gas adjacent to the heating plate. 一種加熱器，其包括：加熱板，其支撐基板，內置發熱體，該發熱體用於藉助藉由接合的電源線而接入的電流來發熱，加熱該基板；中空軸，其支撐該加熱板；及支架，其由主體、氣體供應孔及氣體排出孔構成，該主體固定於該軸的端部，該氣體供應孔貫通該主體配備，用於為了防止該加熱板的發熱體與該電源線的接合部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體，該氣體排出孔貫通該主體配備，用於從該軸的內部排出該惰性氣體； 其中，該支架進一步包括冷卻管線，其配備得從該主體的內部延長至該主體的上部面，向該主體提供冷卻流體以冷卻該主體，從而防止配備於該軸與該主體之間的O型環劣化。 A heater comprising: a heating plate, which supports a substrate, and a built-in heating body, which is used to heat the substrate by means of a current connected through a bonded power line; a hollow shaft, which supports the heating plate and a bracket, which is composed of a main body, a gas supply hole and a gas discharge hole, the main body is fixed at the end of the shaft, the gas supply hole is equipped through the main body, and is used to prevent the heating element of the heating plate from contacting the power cord The joint part of is oxidized, cools the heating plate and supplies inert gas to the inside of the shaft, and the gas discharge hole is provided through the main body for discharging the inert gas from the inside of the shaft; Wherein, the bracket further includes a cooling line, which is provided to extend from the inside of the main body to the upper face of the main body, to supply cooling fluid to the main body to cool the main body, thereby preventing the O-shaped Ring degradation. 一種沉積裝置，其包括：處理腔室，其與外部密閉，對沉積對象基板執行化學氣相沉積處理；噴頭，其在該處理腔室的上端噴射反應氣體；電漿體電極，其誘導藉由該噴頭而噴射的反應氣體的電漿體反應；及加熱器，其配備於與該噴頭相向的該處理腔室的下部，支撐、加熱該基板；該加熱器包括：加熱板，其支撐基板，內置發熱體，該發熱體用於藉助藉由接合的電源線而接入的電流來發熱，加熱該基板；中空軸，其支撐該加熱板；及支架，其由主體、氣體供應孔及氣體排出孔構成，該主體固定於該軸的端部，該氣體供應孔貫通該主體配備，用於為了防止該加熱板的發熱體與該電源線的接合部位被氧化、冷卻該加熱板而向該軸的內部供應惰性氣體，該氣體排出孔貫通該主體配備，用於從該軸的內部排出該惰性氣體；其中，該支架進一步包括冷卻管線，其配備得從該主體的內部延長至該主體的上部面，向該主體提供冷卻流體以冷卻該主體，從而防止配備於該軸與該主體之間的O型環劣化。 A deposition device, which includes: a processing chamber, which is sealed from the outside, and performs chemical vapor deposition processing on a substrate to be deposited; a shower head, which sprays a reaction gas at the upper end of the processing chamber; a plasma electrode, which induces The plasma reaction of the reactive gas sprayed by the shower head; and the heater, which is equipped at the lower part of the processing chamber facing the shower head, supports and heats the substrate; the heater includes: a heating plate, which supports the substrate, Built-in heating element for heating the substrate by means of electric current connected through the bonded power line; hollow shaft supporting the heating plate; The main body is fixed on the end of the shaft, and the gas supply hole is provided through the main body, and is used to supply air to the shaft in order to prevent the junction of the heating element of the heating plate and the power line from being oxidized and to cool the heating plate. Inert gas is supplied inside of the main body, and the gas discharge hole is provided through the main body for discharging the inert gas from the inside of the shaft; wherein the bracket further includes a cooling line, which is provided to extend from the inside of the main body to the upper part of the main body On the other hand, cooling fluid is supplied to the main body to cool the main body, thereby preventing the O-ring provided between the shaft and the main body from deteriorating. 如申請專利範圍第4項所述之沉積裝置，其中該支架固定於該處理腔室。 The deposition device as described in claim 4 of the patent application, wherein the bracket is fixed in the processing chamber.
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TW201027661A (en) * 2008-08-12 2010-07-16 Applied Materials Inc Electrostatic chuck assembly

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