KR20050006655A - Semiconductor manufacturing equipment having improved wafer supporting structure - Google Patents
Semiconductor manufacturing equipment having improved wafer supporting structure Download PDFInfo
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- KR20050006655A KR20050006655A KR1020030046545A KR20030046545A KR20050006655A KR 20050006655 A KR20050006655 A KR 20050006655A KR 1020030046545 A KR1020030046545 A KR 1020030046545A KR 20030046545 A KR20030046545 A KR 20030046545A KR 20050006655 A KR20050006655 A KR 20050006655A
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- heater block
- cooling water
- process chamber
- connection member
- line
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
Abstract
Description
본 발명은 웨이퍼 지지구조가 개선된 반도체 제조설비에 관한 것으로서, 더욱 상세하게는 히터블럭의 하부와 설비본체와의 접속부에 기밀 유지를 위하여 설치되는 실링부재의 수명을 연장시키기 위한 웨이퍼지지 구조가 개선된 반도체 제조설비에 관한 것이다.The present invention relates to a semiconductor manufacturing equipment having an improved wafer support structure, and more particularly, to an improved wafer support structure for extending the life of a sealing member installed to maintain airtightness at a connection portion between a lower portion of a heater block and a facility body. It relates to a semiconductor manufacturing equipment.
일반적으로, 반도체 패키지를 생산하는 중간 제품의 하나인 반도체 웨이퍼는 화학기상증착장치 등을 이용하여 그 반도체 웨이퍼면에 소정의 막을 증착하는 공정을 수행하게 된다.In general, a semiconductor wafer, which is one of intermediate products for producing a semiconductor package, performs a process of depositing a predetermined film on the surface of the semiconductor wafer using a chemical vapor deposition apparatus or the like.
이러한 증착공정을 수행하는 상기 화학기상증착장치는 소정의 증착공정을 실시하기 위한 공간을 마련하는 공정챔버와, 상기 공정챔버의 내부에 설치되어 웨이퍼를 지지하는 웨이퍼지지장치로 구성된다.The chemical vapor deposition apparatus for performing the deposition process is composed of a process chamber for providing a space for performing a predetermined deposition process, and a wafer support device installed in the process chamber to support the wafer.
상기 웨이퍼지지장치는 그 상면에 웨이퍼를 안착시켜 열을 가할 수 있도록 구성된 것으로서, 상면에 웨이퍼를 고정할 수 있도록 다수의 진공흡착홀이 형성된 히터블럭으로 구성된다. 상기 히터블럭의 내부에는 상기 히터블럭의 상면에 안착된 상기 반도체 웨이퍼에 열을 가할 수 있는 히터코일이 설치되어 있고, 상기 히터블럭의 에지부에는 반도체 웨이퍼의 에지부에 반응가스를 공급할 수 있는 가스공급홀이 형성되어 있고, 그 내부에 상기 히터블럭의 온도를 측정하는 온도계가 삽입 설치되어 있다.The wafer support apparatus is configured to apply heat by mounting a wafer on an upper surface thereof, and is configured of a heater block in which a plurality of vacuum suction holes are formed to fix the wafer on an upper surface thereof. The heater coil is provided inside the heater block for applying heat to the semiconductor wafer seated on the upper surface of the heater block, and a gas for supplying reaction gas to the edge portion of the semiconductor wafer at the edge portion of the heater block. A supply hole is formed, and a thermometer for measuring the temperature of the heater block is inserted therein.
상기 진공흡착홀은 진공라인과 연결되어 도시되지 않은 진공펌프가 동작되면 진공흡입력이 제공되도록 구성되어 있으며, 상기 가스공급홀은 증착공정을 실시하기 위한 공정가스가 공급되는 가스공급라인과 연결되어 있다.The vacuum suction hole is connected to a vacuum line and is configured to provide a vacuum suction input when a vacuum pump (not shown) is operated. The gas supply hole is connected to a gas supply line to which a process gas for performing a deposition process is supplied. .
상기 진공라인, 가스공급라인, 온도계는 히터블럭의 하부로 인출되어 연장부재의 속에 내장되어 있고, 상기 연장부재는 그 상단이 상기 히터블럭의 하단에 접속되어 있고, 그 하단이 플랜지를 통하여 상기 공정챔버의 바닥부에 접속되어 있다.The vacuum line, the gas supply line, and the thermometer are drawn out under the heater block and embedded in the extension member. The extension member has an upper end connected to the lower end of the heater block, and the lower end thereof is connected to the process through a flange. It is connected to the bottom of the chamber.
그러나, 증착 공정을 실시함에 있어서 히터코일의 발열동작에 의하여 히터블럭이 소정의 온도(예컨대, 400℃~500℃)로 장시간 가열될 경우 그 고온의 열이 연장부재측으로도 전도되어 플랜지로까지 전열된다. 그와 같은 경우 플랜지의 접속부에 설치된 각종 실링부재가 열화되어 그 수명이 단축되는 문제점이 발생되었다.However, in the deposition process, when the heater block is heated to a predetermined temperature (for example, 400 ° C. to 500 ° C.) for a long time due to the heating operation of the heater coil, the high temperature heat is also conducted to the extension member side and transferred to the flange. do. In such a case, various sealing members provided in the connection portion of the flange are deteriorated, which causes a problem of shortening its lifespan.
따라서, 본 발명은 상술한 문제점을 해결하기 위하여 안출 된 것으로서, 본 발명의 목적은 히터블럭의 고온의 열이 연장부재로 전열되어 상기 연장부재와 공정챔버의 접속부에 설치된 각종 실링부재가 열화되는 것을 방지하는 웨이퍼 지지구조가 개선된 반도체 제조설비를 제공하는 데 있다.Accordingly, the present invention has been made to solve the above-described problems, an object of the present invention is that the heat of the high temperature of the heater block is transferred to the extension member is deteriorated various sealing members installed in the connection member of the extension member and the process chamber It is to provide a semiconductor manufacturing equipment with improved wafer support structure to prevent.
도 1은 본 발명의 일 실시 예에 의한 반도체 제조설비의 히터블럭의 구성을 도시한 단면도,1 is a cross-sectional view showing the configuration of a heater block of a semiconductor manufacturing apparatus according to an embodiment of the present invention;
도 2는 상기 도 1의 A표시부를 확대해서 도시한 도면이다.FIG. 2 is an enlarged view of the display unit A of FIG. 1.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
1 : 공정챔버 10 : 웨이퍼지지장치1: process chamber 10: wafer support apparatus
11 : 히터블럭 11a : 진공흡착홀11: heater block 11a: vacuum suction hole
11c : 가스공급홀 13 : 히터코일11c: gas supply hole 13: heater coil
15 : 온도계 17 : 진공라인15 thermometer 17 vacuum line
19 : 가스공급라인 21 : 연장부재19 gas supply line 21 extension member
23 : 접속부재(플랜지) 25a ~ 25d : 제1 내지 제4실링부재23: connecting member (flange) 25a to 25d: first to fourth sealing member
30 : 냉각장치 31 : 냉각수공급장치30: cooling device 31: cooling water supply device
33 : 냉각수공급라인 35 : 냉각수순환라인33: cooling water supply line 35: cooling water circulation line
상술한 목적을 달성하기 위한 본 발명에 의한 웨이퍼 지지구조가 개선된 반도체 제조설비는 소정의 공정을 실시하는 공정챔버와; 상기 공정챔버의 내부에 설치되며 그 상면에 웨이퍼를 안착시키는 히터블럭과; 상기 히터블럭의 내부에 설치되어 상기 히터블럭을 소정의 온도로 가열하는 히터와; 상기 히터블럭을 상기 공정챔버의 바닥부로부터 소정의 간격을 유지시키며 지지하는 연장부재와; 상기 연장부재를 상기 공정챔버에 접속시키는 접속부재와; 상기 연장부재 및 상기 접속부재의접촉부에 설치되어 기밀을 유지시키는 실링부재; 및 상기 접속부재를 냉각시키는 냉각장치를 구비된다.The semiconductor manufacturing equipment with improved wafer support structure according to the present invention for achieving the above object includes a process chamber for performing a predetermined process; A heater block installed in the process chamber and seating a wafer on an upper surface thereof; A heater installed inside the heater block to heat the heater block to a predetermined temperature; An extension member supporting the heater block at a predetermined interval from a bottom of the process chamber; A connection member for connecting the extension member to the process chamber; A sealing member installed at a contact portion of the extension member and the connection member to maintain airtightness; And a cooling device for cooling the connection member.
상기 히터블럭은 그 내부에 진공라인과 연결된 진공흡착홀이 형성되고; 가스공급라인과 연결된 가스공급홀이 형성되고; 상기 히터블럭의 온도를 감지하는 온도계가 설치되며; 상기 히터블럭의 하단부는 상기 진공라인, 가스공급라인, 온도계가 외부로 인출되고; 상기 인출된 진공라인, 가스공급라인, 온도계는 상기 연장부재의 내부에 내장되어 상기 접속부재의 관통홀들을 통해 관통되고; 상기 관통홀 외주에는 실링부재가 각각 설치됨이 바람직하다.The heater block has a vacuum suction hole connected to the vacuum line therein; A gas supply hole connected to the gas supply line is formed; A thermometer for detecting a temperature of the heater block is installed; The lower end of the heater block is the vacuum line, gas supply line, the thermometer is drawn out; The drawn out vacuum line, gas supply line, and thermometer are embedded in the extension member and penetrate through the through holes of the connection member; Sealing members are preferably installed on the outer circumference of the through hole.
상기 냉각유닛은 소정의 냉각수를 생성하는 냉각수공급장치와; 상기 냉각수공급장치로부터 냉각된 냉각수를 공급하는 냉각수공급라인과; 상기 냉각수공급라인과 연통되며 접속부재의 일측에 마련된 냉각수순환라인을 구비함이 바람직하다.The cooling unit includes a cooling water supply device for generating a predetermined cooling water; A cooling water supply line for supplying cooling water cooled from the cooling water supply device; In communication with the cooling water supply line is preferably provided with a cooling water circulation line provided on one side of the connection member.
상기 냉각수순환라인은 상기 접속부재의 내부에 형성함이 바람직하다.The cooling water circulation line is preferably formed in the connection member.
이하 첨부된 도면 도 1을 참조하여 본 발명의 일 실시 예에 의한 구성 및 작용, 효과에 대해서 더욱 상세히 설명한다.Hereinafter, a configuration, an operation, and an effect according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
상기 도면에 도시된 바와 같이 소정의 증착공정을 실시하기 위한 공간을 마련하는 공정챔버(1)와, 상기 공정챔버(1)의 내부에 설치되어 웨이퍼(W)를 지지하는 웨이퍼지지장치(10)로 구성된다.As shown in the drawing, a process chamber 1 for providing a space for performing a predetermined deposition process, and a wafer support apparatus 10 installed in the process chamber 1 to support a wafer W It consists of.
상기 웨이퍼지지장치(10)는 웨이퍼(W)에 열을 가할 수 있도록 구성된 것으로서, 그 구성은 소정의 직경을 갖는 실린더상의 히터블럭(11)으로 구성된다.The wafer support apparatus 10 is configured to apply heat to the wafer W, and its configuration is constituted by a cylindrical heater block 11 having a predetermined diameter.
상기 히터블럭(11)은 그 상면에 웨이퍼(W)를 고정할 수 있도록 다수의 진공흡착홀(11a)이 형성되고, 상기 히터블럭(11)의 내부에는 상기 히터블럭(11)의 상면에 안착된 상기 웨이퍼(W)에 열을 가할 수 있는 히터코일(13)이 설치되며, 상기 히터블럭(11)의 에지부에는 웨이퍼(W)의 에지부에 반응가스를 공급할 수 있는 가스공급홀(11c)이 형성되고, 그 내부에 상기 히터블럭(11)의 온도를 측정하는 온도계(15)가 삽입 설치된다.The heater block 11 has a plurality of vacuum suction holes 11a formed on the top surface thereof to fix the wafer W, and the heater block 11 is seated on the top surface of the heater block 11 inside the heater block 11. A heater coil 13 capable of applying heat to the wafer W is provided, and a gas supply hole 11c capable of supplying a reaction gas to an edge portion of the wafer W in an edge portion of the heater block 11. ) Is formed, and a thermometer 15 for measuring the temperature of the heater block 11 is inserted therein.
상기 진공흡착홀(11a)은 진공라인(17)과 연결되어 도시되지 않은 진공펌프가 동작되면 진공흡입력이 제공되도록 구성되어 있다.The vacuum suction hole 11a is connected to the vacuum line 17 so that a vacuum suction input is provided when a vacuum pump (not shown) is operated.
상기 가스공급홀(11c)은 상기 웨이퍼(W) 에지부의 외주연을 따라 소정의 폭을 갖는 링형으로 형성되어 있고, 또 상기 가스공급홀(11c)은 상기 웨이퍼(W)에 소정의 박막을 증착하기 위한 공정가스가 공급되도록 가스공급라인(19)과 연결되어 있다.The gas supply hole 11c is formed in a ring shape having a predetermined width along the outer circumference of the edge portion of the wafer W, and the gas supply hole 11c deposits a predetermined thin film on the wafer W. It is connected to the gas supply line 19 so that the process gas for supplying.
상기 온도계(15), 진공라인(17), 가스공급라인(19)은 히터블럭(11)의 하부로 인출되어 연장부재(21)의 속에 내장되어 있고, 상기 연장부재(21)는 그 상단이 상기 히터블럭(11)의 하단에 접속되어 있고, 그 하단이 접속부재(23:예컨대 이하 “플랜지”라 칭함)를 통하여 상기 공정챔버(1)의 바닥부에 접속되어 있다.The thermometer 15, the vacuum line 17, and the gas supply line 19 are drawn out of the lower portion of the heater block 11 and embedded in the extension member 21, and the extension member 21 has an upper end thereof. It is connected to the lower end of the heater block 11, and the lower end thereof is connected to the bottom of the process chamber 1 via a connecting member 23 (for example, referred to as "flange").
상기 연장부재(21)의 바닥부 및 플랜지(23)에는 상기 온도계 (15) 진공라인(17), 가스공급라인(19))이 인출되도록 복수의 관통홀(21a, 21b, 21c)(23a, 23b, 23c)이 형성되어 있고, 상기 연장부재(21)와 플랜지(23)의 사이에는 기밀 유지를 위한 제1실링부재(25a)가 설치되어 있고, 상기 온도계(15), 진공라인(17), 가스공급라인(19), 온도계(15)의 외주부로 하여 플랜지(23)가 접속되는 부분에는 제2 내지 제4실링부재(25b,25c,25d)가 각각 설치되어 있다.The plurality of through-holes 21a, 21b, 21c, 23a, and the like are provided in the bottom portion and the flange 23 of the extension member 21 so that the thermometer 15, the vacuum line 17, and the gas supply line 19 are drawn out. 23b and 23c are formed, and between the extension member 21 and the flange 23, the 1st sealing member 25a for airtight holding | maintenance is provided, and the said thermometer 15 and the vacuum line 17 are carried out. The second to fourth sealing members 25b, 25c, and 25d are provided at portions where the flange 23 is connected to the outer circumference of the gas supply line 19 and the thermometer 15, respectively.
상기 플랜지(23)에는 냉각장치(30)를 추가로 설치함이 바람직하다.Preferably, the flange 23 further includes a cooling device 30.
상기 냉각장치(30)는 소정의 냉각수를 생성하는 냉각수공급장치(31)와, 상기 냉각수공급장치(31)로부터 생성된 냉각수를 공급하는 냉각수공급라인(33)과, 상기 냉각수공급라인(33)과 연통되어 상기 플랜지(23)와 접촉되도록 마련된 냉각수순환라인(35)으로 구성한다. 상기 냉각수순환라인(25)은 상기 플랜지(23)의 내부에 형성함이 더욱더 바람직하다.The cooling device 30 includes a cooling water supply device 31 for generating predetermined cooling water, a cooling water supply line 33 for supplying cooling water generated from the cooling water supply device 31, and the cooling water supply line 33. It consists of a cooling water circulation line 35 in communication with the flange 23 is provided in contact with. The cooling water circulation line 25 is more preferably formed in the flange (23).
여기서, 상기 냉각수공급장치(30)는 일 예로 공지의 냉동사이클장치(압축기, 응축기, 증발기 모세관 등으로 구성)를 채용하여 사용할 수 있으며, 이때 그 생성된 냉각수는 별도의 저장탱크에 저장되어 지속적으로 공급되도록 구성할 수 있을 것이다.Here, the cooling water supply device 30 may be used by using a known refrigeration cycle device (composed of a compressor, a condenser, an evaporator capillary tube, etc.) as an example, wherein the generated cooling water is stored in a separate storage tank and continuously It may be configured to be supplied.
상기와 같은 구조의 웨이퍼지지장치(10)를 갖는 화학기상증착 장치는 먼저, 상기 공정챔버(1)내에 설치된 상기 히터블럭(11)의 진공흡착홀(11a)에 의하여 웨이퍼(W)가 고정되고, 상기 히터코일(13)에 전기가 인가되어 증착하기에 적당한 온도로 상승시킴과 아울러 상기 가스공급홀(11c)을 통하여 상기 웨이퍼(W)의 에지부에 공정가스를 공급함으로써 웨이퍼(W)의 상면에 소정의 박막이 증착된다.In the chemical vapor deposition apparatus having the wafer support apparatus 10 having the above-described structure, first, the wafer W is fixed by the vacuum suction hole 11a of the heater block 11 installed in the process chamber 1. In addition, by applying electricity to the heater coil 13 to raise the temperature suitable for deposition and supplying the process gas to the edge portion of the wafer W through the gas supply hole 11c, A predetermined thin film is deposited on the upper surface.
그런데, 상술한 바와 같은 증착 공정을 실시함에 있어서 히터코일(13)의 발열동작에 의하여 히터블럭(11)이 소정의 온도(예컨대, 400℃~500℃)로 장시간 진행한다. 이때, 상기 히터코일(13)에 발생하는 열의 70~80%가 상기 히터블럭에 전열되고, 나머지의 열이 히터블럭(11)의 하부에 설치된 연장부재(21) 및 플랜지(23)측으로 까지 전열된다. 그와 같은 경우 플랜지(23)의 접속부에 마련된 제1 내지 제4실링부재(25a,25b,25c,25d) 또한 열화 되어 그 수명이 단축되는 문제점이 발생한다.However, in performing the deposition process as described above, the heater block 11 proceeds for a long time to a predetermined temperature (for example, 400 ° C. to 500 ° C.) by the heating operation of the heater coil 13. At this time, 70 to 80% of the heat generated in the heater coil 13 is transferred to the heater block, and the remaining heat is transferred to the extension member 21 and the flange 23 side installed under the heater block 11. do. In such a case, the first to fourth sealing members 25a, 25b, 25c, and 25d provided at the connecting portion of the flange 23 are also deteriorated to shorten their lifespan.
이러한 문제점은 본 발명에 의한 냉각장치(30)가 해결한다.This problem is solved by the cooling device 30 according to the present invention.
그에 대해서 좀더 자세히 설명하면, 먼저, 냉각수공급장치(31)에서 냉각수를 소정의 온도로 냉각시켜 공급하면 냉각수공급라인(33)을 통해 플랜지(23)의 내부에 마련된 냉각수순환라인(35)을 통해 공급된다. 따라서, 고온의 상태로 된 플랜지(23)를 냉각시켜 제1 내지 제4실링부재(25a~25d)에 고온의 열이 가해지는 것을 해소시킨다.In more detail, first, when the cooling water is supplied to the cooling water at a predetermined temperature by the cooling water supply device 31, the cooling water circulation line 35 provided inside the flange 23 through the cooling water supply line 33 is provided. Supplied. Therefore, the flange 23 in a high temperature state is cooled, and the high temperature heat is applied to the first to fourth sealing members 25a to 25d.
상술한 바와 같이 본 발명은 히터블럭과 공정챔버와의 접속부에 냉각장치를 구성하여 히터블럭으로부터 전열되는 고온의 열로 인해 상기 접속부재에 설치된 실링부재가 열화되어 수명이 단축되는 문제점을 해소시킨다.As described above, the present invention constitutes a cooling device in the connection portion between the heater block and the process chamber to solve the problem that the sealing member installed in the connection member is deteriorated due to the high temperature heat transferred from the heater block to shorten the service life.
이와 같이, 본 발명의 상세한 설명에서는 구체적인 실시 예에 관해 설명하였으나, 본 발명의 범주에서 벗어나지 않는 한도 내에서 여러 가지 변형이 가능함은 물론이다. 그러므로, 본 발명의 범위는 설명된 실시 예에 국한되어 정해져서는 안되며 후술하는 특허청구범위 뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030046545A KR20050006655A (en) | 2003-07-09 | 2003-07-09 | Semiconductor manufacturing equipment having improved wafer supporting structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030046545A KR20050006655A (en) | 2003-07-09 | 2003-07-09 | Semiconductor manufacturing equipment having improved wafer supporting structure |
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| Publication Number | Publication Date |
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| KR20050006655A true KR20050006655A (en) | 2005-01-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1020030046545A KR20050006655A (en) | 2003-07-09 | 2003-07-09 | Semiconductor manufacturing equipment having improved wafer supporting structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8044454B2 (en) | 2006-07-05 | 2011-10-25 | Hynix Semiconductor Inc. | Non-volatile memory device |
| KR20190052804A (en) * | 2017-11-09 | 2019-05-17 | 주식회사 미코 | Mount, heater having the mount, and deposition apparatus having the heater |
-
2003
- 2003-07-09 KR KR1020030046545A patent/KR20050006655A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8044454B2 (en) | 2006-07-05 | 2011-10-25 | Hynix Semiconductor Inc. | Non-volatile memory device |
| KR20190052804A (en) * | 2017-11-09 | 2019-05-17 | 주식회사 미코 | Mount, heater having the mount, and deposition apparatus having the heater |
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