TWI785174B - 用於深度學習人工類神經網路中的類比非揮發性記憶體的可程式化神經元 - Google Patents

用於深度學習人工類神經網路中的類比非揮發性記憶體的可程式化神經元 Download PDF

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TWI785174B
TWI785174B TW107146980A TW107146980A TWI785174B TW I785174 B TWI785174 B TW I785174B TW 107146980 A TW107146980 A TW 107146980A TW 107146980 A TW107146980 A TW 107146980A TW I785174 B TWI785174 B TW I785174B
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neural network
artificial neural
current
neuron
vector matrix
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TW201931214A (zh
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曉萬 陳
史丹利 洪
英 李
順 武
新 范
開 阮
漢 陳
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美商超捷公司
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    • H03F3/45—Differential amplifiers
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    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
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    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
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    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/14—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for addition or subtraction 
    • G—PHYSICS
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    • G06G7/18—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals
    • G06G7/184—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements
    • G06G7/186—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements using an operational amplifier comprising a capacitor or a resistor in the feedback loop
    • G—PHYSICS
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    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/24—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for evaluating logarithmic or exponential functions, e.g. hyperbolic functions
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    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45524—Indexing scheme relating to differential amplifiers the FBC comprising one or more active resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45269—Complementary non-cross coupled types

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TW107146980A 2018-01-03 2018-12-25 用於深度學習人工類神經網路中的類比非揮發性記憶體的可程式化神經元 TWI785174B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201862613373P 2018-01-03 2018-01-03
US62/613,373 2018-01-03
US15/936,983 US11354562B2 (en) 2018-01-03 2018-03-27 Programmable neuron for analog non-volatile memory in deep learning artificial neural network
US15/936,983 2018-03-27
PCT/US2018/063147 WO2019135839A1 (en) 2018-01-03 2018-11-29 Programmable neuron for analog non-volatile memory in deep learning artificial neural network
WOPCT/US18/63147 2018-11-29
??PCT/US18/63147 2018-11-29

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TWI785174B true TWI785174B (zh) 2022-12-01

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JP7244525B2 (ja) 2023-03-22
KR102616978B1 (ko) 2023-12-21
EP3735656A1 (en) 2020-11-11
US20190205729A1 (en) 2019-07-04
KR20200096808A (ko) 2020-08-13
CN111542840A (zh) 2020-08-14
EP3735656A4 (en) 2021-10-13
WO2019135839A8 (en) 2020-07-09
US11354562B2 (en) 2022-06-07
TW201931214A (zh) 2019-08-01
WO2019135839A1 (en) 2019-07-11
EP3735656B1 (en) 2023-12-27
JP2021509514A (ja) 2021-03-25

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