TWI784991B - 產生離子能量分佈函數（ｉｅｄｆ）的方法 - Google Patents

產生離子能量分佈函數（ｉｅｄｆ）的方法 Download PDF

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TWI784991B
TWI784991B TW106143511A TW106143511A TWI784991B TW I784991 B TWI784991 B TW I784991B TW 106143511 A TW106143511 A TW 106143511A TW 106143511 A TW106143511 A TW 106143511A TW I784991 B TWI784991 B TW I784991B
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voltage
pulse
pulses
amplitude
voltage pulses
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TW106143511A
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TW201833965A (zh
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雷歐尼德 朵夫
特拉維斯 高
奧黎維兒 魯爾
奧利維爾 朱伯特
菲利浦 Ａ 克勞司
拉吉德 汀德沙
詹姆士修 羅傑斯
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW106143511A 2016-12-12 2017-12-12 產生離子能量分佈函數（ｉｅｄｆ）的方法 TWI784991B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662433204P 2016-12-12 2016-12-12
US62/433,204 2016-12-12
US15/834,939 US10312048B2 (en) 2016-12-12 2017-12-07 Creating ion energy distribution functions (IEDF)
US15/834,939 2017-12-07

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TW201833965A TW201833965A (zh) 2018-09-16
TWI784991B true TWI784991B (zh) 2022-12-01

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TW111141611A TWI855415B (zh) 2016-12-12 2017-12-12 產生離子能量分佈函數的方法
TW113129778A TW202503813A (zh) 2016-12-12 2017-12-12 產生離子能量分佈函數的方法

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US (4) US10312048B2 (cg-RX-API-DMAC7.html)
JP (3) JP7213808B2 (cg-RX-API-DMAC7.html)
KR (3) KR102527251B1 (cg-RX-API-DMAC7.html)
CN (2) CN109997214B (cg-RX-API-DMAC7.html)
TW (3) TWI784991B (cg-RX-API-DMAC7.html)
WO (1) WO2018111751A1 (cg-RX-API-DMAC7.html)

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KR102527251B1 (ko) 2023-04-27
US10685807B2 (en) 2020-06-16
TW202503813A (zh) 2025-01-16
JP2024133686A (ja) 2024-10-02
KR102770824B1 (ko) 2025-02-19
JP7703507B2 (ja) 2025-07-07
US10312048B2 (en) 2019-06-04
US20210343496A1 (en) 2021-11-04
KR20210150603A (ko) 2021-12-10
CN109997214B (zh) 2023-08-22
TWI855415B (zh) 2024-09-11
JP2023022086A (ja) 2023-02-14
US20190259562A1 (en) 2019-08-22
TW202312210A (zh) 2023-03-16
TW201833965A (zh) 2018-09-16
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US20180166249A1 (en) 2018-06-14
US20200266022A1 (en) 2020-08-20
KR102335200B1 (ko) 2021-12-02
JP7766751B2 (ja) 2025-11-10
KR20190083007A (ko) 2019-07-10
US11728124B2 (en) 2023-08-15
CN112701025B (zh) 2024-03-26
JP7213808B2 (ja) 2023-01-27
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