TWI784981B - Method of forming piezoelectric crystal film and tray for forming piezoelectric crystal film - Google Patents
Method of forming piezoelectric crystal film and tray for forming piezoelectric crystal film Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 67
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 11
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- 229910052751 metal Inorganic materials 0.000 claims description 7
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 claims 1
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- 238000001465 metallisation Methods 0.000 description 12
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- 230000000052 comparative effect Effects 0.000 description 7
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
本發明係有關一種壓電體結晶膜的成膜方法及壓電體結晶膜成膜用盤。 The present invention relates to a method for forming a piezoelectric crystal film and a disk for forming a piezoelectric crystal film.
以往的壓電體結晶膜的成膜方法已廣為人知。這種壓電體結晶膜的成膜方法例如已揭示於日本特開平10-060658號公報及日本特許第5747041號公報。 Conventionally, methods for forming a piezoelectric crystal film are widely known. A film-forming method of such a piezoelectric crystal film is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-060658 and Japanese Patent No. 5747041.
上述日本特開平10-060658號公報中,已揭示一種壓電體結晶膜的成膜方法,以與成膜空間內的靶相對向的方式將基板承載於保持體,藉由配置在保持體側的加熱器將承載於保持體的基板加熱,並對靶施加電壓,而在基板上形成壓電體結晶膜。該日本特開平10-060658號公報所記載之壓電體結晶膜的成膜方法中,基板係直接承載於固定在成膜空間內的保持體。 In the aforementioned Japanese Patent Application Laid-Open No. 10-060658, a film-forming method of a piezoelectric crystal film has been disclosed. The substrate is placed on a holder so as to face a target in the film-forming space. The heater heats the substrate mounted on the holder, and applies a voltage to the target to form a piezoelectric crystal film on the substrate. In the method for forming a piezoelectric crystal film described in Japanese Patent Application Laid-Open No. 10-060658, the substrate is directly placed on a holder fixed in a film-forming space.
又,上述日本特許第5747041號公報中,已揭示一種壓電體結晶膜的成膜方法,以與成膜空間內的靶相對向的方式將基板承載於基板保持座,藉由配置在基 板保持座側的發熱部將承載於基板保持座的基板加熱,並對靶施加電壓,而在基板上形成壓電體結晶膜。該日本特許第5747041號公報所記載之壓電體結晶膜的成膜方法中,基板係直接承載於固定在成膜空間內的基板保持座。 In addition, the above-mentioned Japanese Patent No. 5747041 discloses a method for forming a piezoelectric crystal film, in which a substrate is placed on a substrate holder so as to face a target in the film formation space, The heating unit on the seat side heats the substrate placed on the substrate holding seat, applies a voltage to the target, and forms a piezoelectric crystal film on the substrate. In the method for forming a piezoelectric crystal film described in Japanese Patent No. 5747041, a substrate is directly placed on a substrate holder fixed in a film forming space.
但是,上述日本特開平10-060658號公報及日本特許第5747041號公報之壓電體結晶膜的成膜方法中,由於使基板直接承載於固定在成膜空間內的保持體(基板保持座),基板的尺寸比保持體大時,與保持體接觸的部分及不與保持體接觸的部分傳到基板的熱量不同,基板的溫度不安定。又,基板的尺寸比保持體小時,熱量會由露出基板之保持體的部分以輻射熱散逸,導致基板的熱量經由保持體損失。因此,基板的溫度控制變得困難。該等結果使基板的溫度不均,故導致壓電體結晶膜的成分不均。因而有難以使膜質良好的壓電體結晶膜在基板穩定成膜的問題。 However, in the method for forming a piezoelectric crystal film in the aforementioned Japanese Patent Laid-Open No. 10-060658 and Japanese Patent No. 5747041, since the substrate is directly placed on a holder (substrate holder) fixed in the film-forming space, , When the size of the substrate is larger than that of the holder, the heat transferred to the substrate is different between the part in contact with the holder and the part not in contact with the holder, and the temperature of the substrate is not stable. In addition, if the size of the substrate is smaller than that of the holder, the heat will be dissipated by radiation from the portion of the holder exposed to the substrate, resulting in loss of heat from the substrate through the holder. Therefore, temperature control of the substrate becomes difficult. As a result, the temperature of the substrate becomes uneven, resulting in uneven composition of the piezoelectric crystal film. Therefore, there is a problem that it is difficult to stably form a piezoelectric crystal film with good film quality on a substrate.
本發明係為解決上述課題而成者,本發明之一個目的係提供使膜質良好的壓電體結晶膜能夠在基板穩定地成膜之壓電體結晶膜的成膜方法及壓電體結晶膜成膜用盤。 The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a method for forming a piezoelectric crystal film and a piezoelectric crystal film capable of stably forming a piezoelectric crystal film with good film quality on a substrate. Film-forming disk.
為解決上述課題,本案發明人致力研究的結果,發現藉由將基板配置於由陶瓷構成且承載基板之側的面的基材所露出之部分的外緣部的直徑為基板的直徑之1.05倍以上1.15倍以下的盤,而在基板上形成壓電體結晶 膜時,可使膜質良好的壓電體結晶膜在基板穩定地成膜。亦即,本發明的第1形態之壓電體結晶膜的成膜方法係具備:將基板配置於由陶瓷構成且承載基板之側的面的基材所露出之部分的外緣部的直徑為基板的直徑之1.05倍以上1.15倍以下的盤的步驟;將基板與盤一起配置成與配置在成膜空間內之包含壓電體的材料的靶相對向的步驟;從盤側加熱基板的步驟;對靶施加電壓的步驟;以及在基板上形成壓電體結晶膜的步驟。 In order to solve the above-mentioned problems, the inventors of the present application made intensive research and found that the diameter of the outer edge of the exposed part of the base material on the side surface of the base material that is made of ceramics and carries the base plate is 1.05 times the diameter of the base plate. When the piezoelectric crystal film is formed on the substrate with a disk of 1.15 times or less, a piezoelectric crystal film with good film quality can be stably formed on the substrate. That is, the film-forming method of the piezoelectric crystal film according to the first aspect of the present invention comprises: disposing the substrate on the surface of the substrate on the side of the substrate which is made of ceramics and the diameter of the outer edge part is exposed. A step in which the diameter of the substrate is at least 1.05 times and not more than 1.15 times the disk; a step of arranging the substrate and the disk so as to face a target of a material including a piezoelectric body arranged in the film formation space; a step of heating the substrate from the disk side ; a step of applying a voltage to the target; and a step of forming a piezoelectric crystal film on the substrate.
本發明的第1形態之壓電體結晶膜的成膜方法中,藉由上述構成,能夠將基板與盤一起配置在成膜空間內,因此可配合基板的尺寸選擇盤,而使壓電體結晶膜在基板成膜。亦即,將基板配置於承載基板之側的面的基材所露出之部分的外緣部的直徑為基板的直徑之1.05倍以上1.15倍以下的盤,而在基板上形成壓電體結晶膜。藉此,可在基板的背面整體與盤接觸的狀態下加熱基板,而夠使基板的溫度穩定。又,藉由將承載基板之側的面的基材所露出之部分的外緣部的直徑形成為基板的直徑之1.15倍以下,由於可抑制盤的基材所露出的部分變得過大,故可抑制來自盤的基材所露出的部分的輻射熱引起的散熱量增加。藉此,可抑制基板的熱量經由盤損失,而能夠降低基板的溫度不均,以降低基板面內之膜質的不均。另外,因能夠容易地進行溫度控制,故可使膜質良好的壓電體結晶膜在基板穩定地成膜。此外,藉由盤所具有的熱容量保溫,可抑制成膜後基板急速冷卻,因而可抑制壓電 體結晶膜的膜質劣化。藉此,亦可降低基板的溫度不均,而降低基板面內之膜質的不均。又,藉由將承載基板之側的面的基材所露出之部分的外緣部的直徑形成為基板的直徑之1.05倍以上,可容易配合基板的直徑形成盤的基材所露出的部分。 In the film-forming method of the piezoelectric crystal film according to the first aspect of the present invention, with the above-mentioned configuration, the substrate and the disk can be arranged in the film-forming space, so the disk can be selected according to the size of the substrate, and the piezoelectric body can be formed The crystal film is formed on the substrate. That is, the substrate is disposed on a disc in which the diameter of the outer edge of the exposed portion of the base material on the side surface carrying the substrate is 1.05 to 1.15 times the diameter of the substrate, and the piezoelectric crystal film is formed on the substrate. . Thereby, the substrate can be heated while the entire back surface of the substrate is in contact with the disk, and the temperature of the substrate can be stabilized. Also, by forming the diameter of the outer edge of the exposed portion of the substrate on the side surface of the carrying substrate to be 1.15 times or less the diameter of the substrate, the exposed portion of the substrate of the disc can be suppressed from becoming too large. An increase in the amount of heat dissipation due to radiant heat from the exposed portion of the base material of the disk can be suppressed. Thereby, the heat loss of the substrate through the disk can be suppressed, and the temperature unevenness of the substrate can be reduced, so as to reduce the unevenness of the film quality in the surface of the substrate. In addition, since temperature control can be easily performed, a piezoelectric crystal film having good film quality can be stably formed on the substrate. In addition, the thermal capacity of the disk can keep the substrate warm, and the rapid cooling of the substrate after film formation can be suppressed, thereby suppressing the deterioration of the film quality of the piezoelectric crystal film. Thereby, the temperature unevenness of the substrate can also be reduced, thereby reducing the unevenness of the film quality in the substrate surface. In addition, by forming the diameter of the outer edge of the exposed portion of the substrate on the side surface of the carrying substrate to be at least 1.05 times the diameter of the substrate, the exposed portion of the substrate can be easily formed in accordance with the diameter of the substrate.
上述第1形態之壓電體結晶膜的成膜方法中,較理想為,在將基板配置於盤的步驟中,藉由盤之承載基板之側的面所形成的凸狀定位部對基板進行定位而將基板配置於盤。依據上述構成,由於基板的背面整體可容易配置在盤的基材所露出的部分,故可將熱量經由盤的基材均勻地傳至基板。又,在移動配置有基板的盤時,藉由定位部可抑制基板對於盤的偏離。 In the film-forming method of the piezoelectric crystal film according to the first aspect, preferably, in the step of arranging the substrate on the disk, the substrate is positioned by the convex positioning portion formed on the surface of the disk on the side where the substrate is placed. Position and place the substrate on the tray. According to the above configuration, since the entire back surface of the substrate can be easily disposed on the exposed portion of the disk base material, heat can be uniformly transferred to the substrate through the disk base material. In addition, when the disc on which the substrate is placed is moved, deviation of the substrate from the disc can be suppressed by the positioning portion.
在此情況下,盤的定位部較理想為沿著盤的外周形成。依據上述構成,由於可在盤的外周配置凸狀定位部,故能夠使盤的外周的熱容量增大。藉此,可抑制基板之外周側的溫度比中心側低,而可使壓電體結晶膜穩定地成膜。 In this case, the positioning portion of the disk is preferably formed along the outer periphery of the disk. According to the above configuration, since the convex positioning portion can be arranged on the outer periphery of the disk, it is possible to increase the heat capacity of the outer periphery of the disk. Thereby, the temperature on the outer peripheral side of the substrate can be suppressed from being lower than that on the central side, and the piezoelectric crystal film can be formed stably.
上述第1形態之壓電體結晶膜的成膜方法中,較理想為,在盤中,以使盤的承載基板之側的面的基材所露出之部分的直徑成為基板的直徑之1.05倍以上1.15倍以下的方式,以金屬被覆承載基板之側的面的承載基板之基板承載區域以外的部分。依據上述構成,由於可藉由金屬的被覆抑制來自盤的熱幅射,相對於盤的直徑,具有未滿其1/1.15倍的直徑的基板亦能夠使壓電體結晶膜穩定 地成膜。 In the film-forming method of the piezoelectric crystal film according to the first aspect, preferably, in the disk, the diameter of the exposed portion of the base material on the side of the disk carrying the substrate is 1.05 times the diameter of the substrate. In a manner of 1.15 times or less, the portion of the carrier substrate other than the substrate mounting region of the carrier substrate side surface is covered with a metal. According to the above configuration, since heat radiation from the disk can be suppressed by the metal coating, the piezoelectric crystal film can be stably formed even on a substrate having a diameter less than 1/1.15 times the diameter of the disk.
上述第1形態之壓電體結晶膜的成膜方法中,較理想為,在將基板與盤一起配置於成膜空間內的步驟中,將載置有基板的盤在成膜空間內配置於圓環狀的承載座,而該承載座具有的外周部分的直徑係大於盤的直徑。依據上述構成,由於可使承載座的外周比盤的外周大,故能夠將盤穩定地配置於承載座。又,因能夠將露出盤的直徑方向之外側的承載座的部分設置為靠近基板,故可使來自靶而附著在承載座之壓電體的材料蒸發並供給至盤上的基板。藉此,更能夠使壓電體結晶膜在基板穩定地成膜。 In the film-forming method of the piezoelectric crystal film according to the first aspect, preferably, in the step of disposing the substrate and the disk in the film-forming space, the disk on which the substrate is placed is arranged in the film-forming space. An annular bearing seat, and the diameter of the outer peripheral portion of the bearing seat is larger than the diameter of the disc. According to the above configuration, since the outer circumference of the susceptor can be made larger than the outer circumference of the disk, the disk can be stably arranged on the susceptor. Also, since the portion of the susceptor exposed outside the radial direction of the disc can be placed close to the substrate, the material of the piezoelectric body adhering to the susceptor from the target can be evaporated and supplied to the substrate on the disc. Thereby, the piezoelectric crystal film can be more stably formed on the substrate.
上述第1形態之壓電體結晶膜的成膜方法中,較理想為,在加熱基板的步驟中,將基板加熱至壓電體的材料的居里點(curie point)以上的溫度,更具備:在基板上形成壓電體結晶膜之後,更具備在成膜空間內將基板慢慢冷卻至壓電體的材料的居里點以下的溫度的步驟。依據上述構成,因能夠在壓電體結晶膜的一部分使結晶的定向性反轉,故可提高壓電體的壓電常數d31(沿著面之方向的壓電常數)。 In the film-forming method of the piezoelectric crystal film according to the first embodiment, preferably, in the step of heating the substrate, the substrate is heated to a temperature equal to or higher than the Curie point of the piezoelectric material, and further comprises: : After forming the piezoelectric crystal film on the substrate, further comprising a step of gradually cooling the substrate to a temperature below the Curie point of the piezoelectric material in the film formation space. According to the above configuration, since the orientation of the crystal can be reversed in a part of the piezoelectric crystal film, the piezoelectric constant d 31 (the piezoelectric constant in the direction along the plane) of the piezoelectric can be increased.
上述第1形態之壓電體結晶膜的成膜方法中,較理想為,盤係由包含碳化矽之基材形成,壓電體的材料係包含鋯鈦酸鉛。依據上述構成,可使用包含碳化矽的盤使包含鋯鈦酸鉛之膜質良好的壓電體結晶膜在基板穩定地成膜。 In the film-forming method of the piezoelectric crystal film of the first aspect, preferably, the disk is formed of a base material containing silicon carbide, and the material of the piezoelectric body contains lead zirconate titanate. According to the above configuration, a high-quality piezoelectric crystal film containing lead zirconate titanate can be stably formed on the substrate by using the disk containing silicon carbide.
本發明之第2形態之壓電體結晶膜成膜用 盤係與基板一起配置在壓電體的成膜空間內,該壓電體結晶膜成膜用盤係具備:承載基板的基板承載區域;及盤本體,係由陶瓷構成,且承載基板之側的面的基材所露出之部分的外緣部的直徑係具有基板承載區域的直徑之1.05倍以上1.15倍以下的直徑。 A disk system for forming a piezoelectric crystal film according to a second aspect of the present invention is disposed together with a substrate in a space for forming a piezoelectric film, and the disk system for forming a piezoelectric crystal film includes: a substrate mounting area for mounting a substrate and the disk body is made of ceramics, and the diameter of the outer edge of the exposed part of the base material on the side of the substrate carrying substrate is 1.05 to 1.15 times the diameter of the substrate carrying area.
本發明之第2形態之壓電體結晶膜成膜用盤中,藉由上述構成,由於基板與盤能夠配置在成膜空間內,因此可配合基板的尺寸選擇盤,而使壓電體結晶膜在基板成膜。亦即,將基板配置於承載基板之側的面的基材所露出之部分的外緣部的直徑為基板承載區域的直徑之1.05倍以上1.15倍以下的盤,而在基板上形成壓電體結晶膜。藉此,可在基板的背面整體與盤接觸的狀態下加熱基板,而能夠使基板的溫度穩定。又,藉由將承載基板之側的面的基材所露出之部分的外緣部的直徑形成為基板承載區域的直徑之1.15倍以下,由於可抑制盤的基材所露出的部分變得過大,故可抑制來自盤的基材所露出的部分的輻射熱引起的散熱量增加。藉此,可抑制基板的熱量經由盤損失,而能夠降低基板的溫度不均,以降低基板面內之膜質的不均。另外,因能夠容易地進行溫度控制,故可提供能夠使膜質良好的壓電體結晶膜在基板穩定地成膜的壓電體結晶膜成膜用盤。此外,藉由盤所具有的熱容量保溫,可抑制成膜後基板急速冷卻,因而可抑制壓電體結晶膜的膜質劣化。藉此,亦可降低基板的溫度不均,而降低基板面內之膜質的不均。又,藉由將承載基板之側的面的基材 所露出之部分的外緣部的直徑形成為基板承載區域的直徑之1.05倍以上,可容易配合基板的直徑形成盤的基材所露出的部分。 In the disk for forming a piezoelectric crystal film according to the second aspect of the present invention, with the above configuration, since the substrate and the disk can be arranged in the film formation space, the disk can be selected according to the size of the substrate to crystallize the piezoelectric body. The film is formed on the substrate. That is, the substrate is disposed on a plate in which the diameter of the outer edge of the exposed portion of the base material on the side surface of the substrate carrying substrate is 1.05 to 1.15 times the diameter of the substrate carrying area, and the piezoelectric body is formed on the substrate. Crystalline film. Thereby, the substrate can be heated while the entire back surface of the substrate is in contact with the disk, and the temperature of the substrate can be stabilized. Also, by forming the diameter of the outer edge of the exposed portion of the substrate on the side surface of the substrate to be 1.15 times or less the diameter of the substrate mounting region, the exposed portion of the substrate of the disk can be prevented from becoming too large. Therefore, an increase in the amount of heat dissipation due to radiant heat from the exposed portion of the substrate of the disk can be suppressed. Thereby, the heat loss of the substrate through the disk can be suppressed, and the temperature unevenness of the substrate can be reduced, so as to reduce the unevenness of the film quality in the surface of the substrate. In addition, since the temperature can be easily controlled, it is possible to provide a disk for forming a piezoelectric crystal film capable of stably forming a piezoelectric crystal film with good film quality on a substrate. In addition, rapid cooling of the substrate after film formation can be suppressed by heat retention of the heat capacity of the disk, thereby suppressing deterioration of the film quality of the piezoelectric crystal film. Thereby, the temperature unevenness of the substrate can also be reduced, thereby reducing the unevenness of the film quality in the substrate surface. Also, by forming the diameter of the outer edge of the exposed portion of the substrate on the side surface of the substrate to be at least 1.05 times the diameter of the substrate mounting region, the exposed substrate of the disk can be easily formed in accordance with the diameter of the substrate. part.
1‧‧‧壓電體結晶膜成膜裝置 1‧‧‧Piezoelectric crystal film film forming device
2、2a‧‧‧盤 2, 2a‧‧‧Disk
3、3a‧‧‧基板 3. 3a‧‧‧substrate
11‧‧‧殼體 11‧‧‧Shell
12‧‧‧靶 12‧‧‧target
13‧‧‧承載座 13‧‧‧bearing seat
14‧‧‧加熱器 14‧‧‧Heater
15‧‧‧成膜空間 15‧‧‧Film-forming space
20‧‧‧盤本體 20‧‧‧Disk body
21、21a‧‧‧凹部 21, 21a‧‧‧recess
22、22a‧‧‧定位部 22, 22a‧‧‧positioning department
23、23a‧‧‧基板承載區域 23. 23a‧‧‧Substrate carrying area
24‧‧‧金屬化層 24‧‧‧Metallization layer
31、31a‧‧‧本體部 31, 31a‧‧‧body part
32‧‧‧缺口 32‧‧‧Gap
32a‧‧‧定位平面 32a‧‧‧Positioning plane
D1、D2‧‧‧直徑 D1, D2‧‧‧diameter
D3‧‧‧內徑 D3‧‧‧inner diameter
D4‧‧‧外徑 D4‧‧‧outer diameter
D11、D12、D13‧‧‧直徑 D11, D12, D13‧‧‧diameter
T1、T2‧‧‧厚度 T1, T2‧‧‧thickness
S1~S10‧‧‧步驟 S1~S10‧‧‧Steps
第1圖係顯示進行本發明之一實施形態之壓電體結晶膜成膜之壓電體結晶膜成膜裝置的概略圖。 Fig. 1 is a schematic diagram showing a piezoelectric crystal film forming apparatus for forming a piezoelectric crystal film according to an embodiment of the present invention.
第2圖係顯示本發明之一實施形態之壓電體結晶膜成膜用盤的第1例的平面圖。 Fig. 2 is a plan view showing a first example of a disk for forming a piezoelectric crystal film according to an embodiment of the present invention.
第3圖係沿著第2圖的III-III線的剖面圖。 Fig. 3 is a sectional view along line III-III of Fig. 2 .
第4圖係顯示本發明之一實施形態之壓電體結晶膜成膜用盤的第2例的平面圖。 Fig. 4 is a plan view showing a second example of a disk for forming a piezoelectric crystal film according to an embodiment of the present invention.
第5圖係用來說明本發明之一實施形態之壓電體結晶膜的成膜方法的順序圖。 Fig. 5 is a sequence diagram for explaining a method of forming a piezoelectric crystal film according to an embodiment of the present invention.
第6圖係用來說明實施例及比較例之成膜狀態的表。 Fig. 6 is a table for explaining the film-forming states of Examples and Comparative Examples.
以下,根據圖式說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described based on the drawings.
(壓電體結晶膜成膜裝置的構造) (Structure of Piezoelectric Crystal Film Formation Device)
參照第1圖,針對進行本發明之一實施形態之壓電體結晶膜成膜的壓電體結晶膜成膜裝置的構造進行說明。 The structure of a piezoelectric crystal film forming apparatus for forming a piezoelectric crystal film according to an embodiment of the present invention will be described with reference to FIG. 1 .
進行本發明之一實施形態之壓電體結晶膜成膜的壓電體結晶膜成膜裝置1係如第1圖所示,具備殼體11、靶12、承載座13、加熱器14、以及由殼體11所包 圍的成膜空間15。又,壓電體結晶膜成膜裝置1係構成為在配置於盤2的基板3上使壓電體結晶膜進行成膜。此外,盤2係申請專利範圍所記載之「壓電體結晶膜成膜用盤」的一例。 A piezoelectric crystal
壓電體結晶膜係構成為藉由施加電壓而變形。壓電體結晶膜係由強電介質形成。例如壓電體結晶膜係藉由鋯鈦酸鉛(PZT(Pb(Zr,Ti)O3))、鈦酸鉍(BTO(Bi4Ti3O12))、鉍鑭鈦酸鹽(BLT((Bi,La)4Ti3O12))、鍶鉭酸鉍(SBT(SrBi2Ta2O9))、鋯鈦酸鉛鑭(PLZT((PbLa)(ZrTi)O3))、在PZT摻雜Nb的PZNT、以及在PZT摻雜Mn的PZMT等形成。 The piezoelectric crystal film is configured to be deformed by applying a voltage. The piezoelectric crystal film system is formed of a ferroelectric material. For example, the piezoelectric crystal film is made of lead zirconate titanate (PZT(Pb(Zr,Ti)O 3 )), bismuth titanate (BTO(Bi 4 Ti 3 O 12 )), bismuth lanthanum titanate (BLT( (Bi,La) 4 Ti 3 O 12 )), strontium bismuth tantalate (SBT(SrBi 2 Ta 2 O 9 )), lead lanthanum zirconate titanate (PLZT((PbLa)(ZrTi)O 3 )), in PZT Nb-doped PZNT and PZMT doped with Mn are formed.
殼體11係以包圍靶12、承載座13、及加熱器14的方式設置,使成膜空間15構成為可密封。 The
靶12係包含壓電體的材料。壓電體的材料例如包含PZT、BTO、BLT、SBT、PLZT中的至少一種。在成膜空間15中,靶12係以與承載座13相對向的方式配置。靶12係形成為平板狀。靶12係與用來施加電壓的電源連接。 The
承載座13係構成為支撐配置基板3的盤2。承載座13係形成為圓環狀。又,承載座13係藉由陶瓷形成。承載座13例如藉由氧化矽(SiO2)、碳化矽(SiC)等形成。又,圓環狀的承載座13的內徑D3係形成為比盤2的外徑小。又,圓環狀的承載座13係具有比盤2的直徑大的外周部的直徑(外徑D4)。壓電體的材料係堆積在承載座 13露出盤2的部分。例如壓電體的材料包含鉛(Pb)時,鉛會由堆積在承載座13的壓電體的材料蒸發並供給至盤2上的基板3。藉此能夠使壓電體結晶膜在基板3穩定地成膜。 The
加熱器14係構成為加熱基板3。加熱器14係構成為例如藉由紅外線加熱基板3。亦即,加熱器14係構成為藉由輻射熱(輻射)加熱基板3。加熱器14係相對於承載座13配置在靶12的相反側。亦即,加熱器14係構成為與盤2隔開預定間隔,從基板3的背面(與形成有壓電體結晶膜的面為相反側的面)加熱基板3。 The
本實施形態中,盤2係構成為在上面配置基板3。亦即,構成為基板3以接觸在盤2的上面的狀態被承載。盤2係藉由陶瓷形成。盤2係例如藉由包含碳化矽(SiC)的基材形成。盤2係相對於壓電體結晶膜成膜裝置1構成為可放入、取出。亦即,盤2係構成為與基板3一起放入壓電體結晶膜成膜裝置1,成膜後再從壓電體結晶膜成膜裝置1取出。又,盤2係例如直徑約210mm~230mm時,具有約2mm~5mm的厚度。 In the present embodiment, the
此外,盤2係如第2圖所示,包含盤本體20、凹部21、定位部22、及基板承載區域23。盤2(盤本體20)中,承載基板3的面的基材所露出之部分的直徑D2係具有基板3(基板承載區域23)的直徑D1之1.05倍以上1.15倍以下的直徑。又,盤2係對於承載座13為面接觸或線接觸。亦即,盤2係對於承載座13無空隙地接觸。藉 此,可抑制壓電體結晶膜的材料濺到加熱器14側。 In addition, as shown in FIG. 2 , the
凹部21係包含基板承載區域23構成承載基板3。凹部21係形成為圓形。又,凹部21係形成為比基板3的直徑稍大。又,凹部21係如第3圖所示,具有厚度T1。凹部21的厚度T1例如約為2.5mm。 The
如第2圖所示,定位部22係構成為定位基板3對於盤2的承載位置。定位部22係形成為凸狀。又,定位部22係形成在盤2的承載基板3之側的面。又,定位部22係一體化設置在盤2(盤本體20)。定位部22係沿著盤2的外周形成。亦即,定位部22係設置在盤2的周緣。又,定位部22係如第3圖所示,具有厚度T2。定位部22的厚度T2例如約為5mm。 As shown in FIG. 2 , the
基板承載區域23構成為承載基板3。基板承載區域23係形成為平坦狀。 The
如第2圖所示,盤2的直徑大於承載座13的內徑D3。又,盤2的直徑小於承載座13的外徑D4。 As shown in FIG. 2 , the diameter of the
基板3係例如由矽形成。又,如第2圖所示,基板3具有本體部31、及缺口(切口)32。基板3係例如具有200mm的直徑(所謂的8吋晶圓)。又,基板3例如具有725μm的厚度。此外,基板3的直徑係指缺口32除外之圓周狀部分的直徑。又,基板3例如係使用JEITA、ISO等之標準規格的晶圓。 The
在此,參照第4圖,針對相較於盤的直徑,基板的直徑未滿1/1.15時的盤2a及基板3a進行說明。另 外,盤2a係申請專利範圍所記載之「壓電體結晶膜成膜用盤」的一例。 Here, referring to FIG. 4 , the
盤2a的直徑D11必須形成為比承載座13的內徑D3大,以便能夠承載於承載座13。例如,盤2a的直徑D11係形成為大致與盤2的直徑D2相等。盤2a包含凹部21a、定位部22a、基板承載區域23a、以及金屬的金屬化層24。盤2a中,承載基板3a的面的基材所露出之部分的直徑D13係具有基板3a(基板承載區域23a)的直徑D12之1.05倍以上1.15倍以下的直徑。 The diameter D11 of the
亦即,盤2a係以盤2a的承載基板3a的面的基材所露出之部分的直徑D13成為基板3a的直徑D12之1.05倍以上1.15倍以下的方式,藉由金屬的金屬化層24被覆盤2a的承載基板3a的面。 That is, the
金屬化層24係例如由白金(Pt)形成。又,金屬化層24係例如由鋅(Zr)、鈦(Ti)、銥(Ir)等形成。又,金屬化層24係例如由鎢(W)、鉭(Ta)、鉬(Mo)、鈮(Nb)等形成。 The
金屬化層24係配置在盤2a的承載基板3a之側。亦即,金屬化層24係配置在加熱器14的相反側。又,相較於盤2a的基材,金屬化層24係由不容易熱輻射的材料形成。具體而言,相較於盤2a的基材,金屬化層24係由放射率較低的材料形成。此外,金屬化層24係由可承受成膜時的高溫(不會溶解)的材料形成。金屬化層24係設置於定位部22a的表面。 The
另外,凹部21a、定位部22a、及基板承載區域23a係分別與凹部21、定位部22、及基板承載區域23為相同構造。 In addition, the recessed
基板3a係具有本體部31a、及定位平面32a。基板3a係例如具有150mm的直徑(所謂的6吋晶圓)。又,基板3a係例如具有625μm的厚度。此外,基板3a的直徑係指定位平面32a除外之圓周狀部分的直徑。又,基板3a例如係使用JEITA、ISO等之標準規格的晶圓。 The
(壓電體結晶膜的成膜方法) (Film formation method of piezoelectric crystal film)
接著,針對壓電體結晶膜的成膜方法進行說明。 Next, a method for forming a piezoelectric crystal film will be described.
壓電體結晶膜的成膜方法係具備:將基板3配置於盤2的步驟;將基板3與盤2一起配置於成膜空間15內的步驟;從盤2側加熱基板3的步驟;在成膜空間15內供給氬氣(惰性氣體)的步驟;對靶12施加電壓的步驟;以及在基板3上形成壓電體結晶膜的步驟。 The film-forming method of the piezoelectric crystal film includes: a step of arranging the
具體而言,如第5圖所示,步驟S1中,將基板3配置於盤2。更詳細而言,將基板3配置於由陶瓷構成且承載基板3之面的基材所露出之部分的直徑為基板3的直徑之1.05倍以上1.15倍以下的盤2。更理想為,將基板3配置於承載基板3之面的基材所露出之部分的直徑為基板3的直徑之1.05倍以上1.125倍以下的盤2。此時,藉由盤2的承載基板3的面所形成的凸狀定位部22對基板3進行定位而將基板3配置於盤2。此外,基板3上預先形 成有下部電極。而且,壓電體結晶膜在基板3的下部電極上成膜。 Specifically, as shown in FIG. 5 , in step S1 , the
步驟S2中,將基板3與盤2配置於成膜空間15內。具體而言,將基板3與盤2一起配置成與配置在成膜空間15內之包含壓電體的材料的靶12相對向。此時,將載置有基板3的盤2在成膜空間15內配置於圓環狀的承載座13,該承載座13具有的外周部分的直徑係大於盤2的直徑。此外,成膜空間15內由於被減壓(大致為真空壓),基板3及盤2係藉由機械手臂(未圖示)配置在成膜空間15內。 In step S2 , the
步驟S3中,藉由加熱器14加熱基板3。基板3係加熱至壓電體的材料的居里點以上的溫度。例如,基板3係加熱至500~700℃。步驟S4中,供給氬氣至成膜空間15內。步驟S5中,對靶12施加電壓。藉此,使成膜空間15內的氬氣離子化而產生電漿。又,成膜空間15內的離子衝擊靶12,使壓電體的材料(例如PZT)的粒子彈出。彈出之壓電體的材料的粒子到達相對側的基板3,使壓電體結晶膜成膜。 In step S3 , the
經過預定的時間,壓電體結晶膜在基板3上成膜後,在步驟S6中,停止對靶12施加電壓。步驟S7中,停止供給氬氣至成膜空間15內。步驟S8中,關閉加熱器14,停止加熱基板3。 After a predetermined time elapses and the piezoelectric crystal film is formed on the
步驟S9中,於成膜空間15內(壓電體的材料(例如PZT)環境中)使基板3慢慢冷卻。此時,基板3係 從壓電體的材料的居里點以上的溫度慢慢冷卻至居里點以下的溫度。例如,基板3係在1分鐘~30分鐘左右的時間,從約550℃慢慢冷卻至約350℃。較理想為,基板3係以約20分鐘的時間僅下降200℃左右的方式,慢慢冷卻。藉此,例如在已成膜之PZT的膜中,結晶的定向的一部分由c域反轉成a域。藉此,可增加壓電常數d31(沿著面之方向的壓電常數)。又,PZT的壓電體結晶膜的情況時,結晶的定向較理想為a域成為30%~40%左右。又,在步驟S9中進行慢慢冷卻時,較理想為在冷卻前使溫度上升之後再慢慢冷卻(原位退火)。未慢慢冷卻而急速冷卻時,從c域向a域的反轉的量受到抑制,導致結晶的定向的80%以上定向於c域。 In step S9, the
步驟S10中,將基板3及盤2從成膜空間15取出。另外,成膜空間15內由於被減壓(大致為真空壓力),基板3及盤2係藉由機械手臂(未圖示)從成膜空間15取出。藉由上述步驟,在基板3上形成壓電體結晶膜。 In step S10 , the
(實施形態的效果) (Effect of Embodiment)
本實施形態可得到如下述的效果。 In this embodiment, the following effects can be obtained.
本實施形態中,如上所述,由於能夠將基板3與盤2一起配置在成膜空間15內,故可配合基板3的尺寸選擇盤2,而使壓電體結晶膜在基板3成膜。也就是將基板3配置於承載基板3的面的基材所露出之部分的直徑為基板的直徑之1.05倍以上1.15倍以下的盤2,而在基板3上形成壓電體結晶膜。藉此,可在基板3的背面整 體與盤2接觸的狀態下加熱基板3,而可使基板3的溫度穩定。另一方面,未使用盤2而進行加熱的情況下,在升溫時,由於基板3面內的溫度不均,會造成壓電體的Pb量不均,故基板3面內的性能不穩定。又,藉由將承載基板的面的基材所露出之部分的直徑形成為基板3的直徑之1.15倍以下,由於可抑制盤2的基材所露出的部分變得過大,故可抑制來自盤2的基材所露出的部分的輻射熱引起的散熱量增加。藉此,可抑制基板3的熱量經由盤2損失,而能夠降低基板3的溫度不均,以降低基板面內之膜質的不均。另外,因能夠容易地進行溫度控制,故可使膜質良好的壓電體結晶膜在基板3穩定地成膜。此外,藉由盤2所具有的熱容量保溫,可抑制成膜後基板3急速冷卻,因而可抑制壓電體結晶膜的膜質劣化。藉此,亦可降低基板3的溫度不均,而降低基板面內之膜質的不均。另一方面,未使用盤2而進行冷卻的情況,由於晶圓(基板3)薄,面內的溫度不均勻地下降,造成區域比率(定向)不均。較理想為,藉由將基板3配置於基板3的直徑之1.05倍以上1.15倍以下的盤2,在基板3的溫度升降時,溫度控制變得更容易而更提高膜質,並且由於降低基板3的溫度不均,進一步降低基板3面內之膜質的不均。又,藉由將承載基板的面的基材所露出之部分的直徑形成為基板3的直徑之1.05倍以上,可容易配合基板3的直徑形成盤2的基材所露出的部分。 In this embodiment, as described above, since the
又,本實施形態中,將基板3配置於盤2 的步驟中,藉由盤2的承載基板3的面所形成的凸狀定位部22對基板3進行定位而將基板3配置於盤2。藉此,由於基板3的背面整體可容易配置在盤2的基材所露出的部分,故可將熱量經由盤2的基材平均地傳至基板3。此外,在移動配置有基板3的盤2時,藉由定位部22可抑制基板3對於盤2的偏離。 In addition, in the present embodiment, in the step of placing the
又,本實施形態中,沿著盤2的外周形成盤2的定位部22。藉此,由於可在盤2的外周配置凸狀定位部22,故能夠使盤2的外周的熱容量增大。結果,可抑制基板3之外周側的溫度比中心側低,而可使壓電體結晶膜穩定地成膜。 Also, in the present embodiment, the positioning
又,本實施形態中,以使盤2a的承載基板3a的面的基材所露出之部分的直徑成為基板3a的直徑之1.05倍以上1.15倍以下的方式,藉由金屬被覆盤2a的承載基板3a的面。藉此,由於可藉由金屬的被覆抑制來自盤2a的熱幅射,相對於盤2a的直徑,具有未滿其1/1.15倍的直徑的基板3a亦能夠使壓電體結晶膜穩定地成膜。 In addition, in this embodiment, the diameter of the exposed portion of the base material on the surface of the
又,本實施形態中,將基板3與盤2一起配置於成膜空間15內的步驟中,將載置有基板3的盤2在成膜空間內15配置於圓環狀的承載座13,該承載座13具有的外周部分的直徑係大於盤2的直徑的。藉此,由於可使承載座13的外周比盤2的外周大,故能夠將盤2穩定地配置於承載座13。又,因能夠將露出盤2的直徑方向外側的承載座13的部分設置為靠近基板3,故可使來自靶12 而附著在承載座13之壓電體的材料蒸發並供給至盤2上的基板3。藉此,更能夠使壓電體結晶膜在基板3穩定地成膜。 Also, in the present embodiment, in the step of arranging the
又,本實施形態中,在加熱基板3的步驟中,將基板3加熱至壓電體的材料的居里點以上的溫度,而在基板3上形成壓電體結晶膜之後,設置有在成膜空間15內將基板3慢慢冷卻至壓電體的材料的居里點以下的溫度的步驟。藉此,因能夠在壓電體結晶膜的一部分使結晶的定向性反轉,故可提高壓電體的壓電常數d31(沿著面之方向的壓電常數)。 In addition, in the present embodiment, in the step of heating the
又,本實施形態中,藉由包含碳化矽(SiC)之基材形成盤2,且壓電體的材料係包含鋯鈦酸鉛(PZT)。藉此,使用包含碳化矽(SiC)的盤2能夠使膜質良好之包含鋯鈦酸鉛(PZT)的壓電體結晶膜在基板3穩定地成膜。 Also, in the present embodiment, the
(實施例的說明) (Description of Example)
接著,參照第6圖,針對進行本實施形態之壓電體結晶膜之成膜狀態的評估的實驗結果(實施例)進行說明。 Next, with reference to FIG. 6, the experimental results (example) for evaluating the film-forming state of the piezoelectric crystal film according to the present embodiment will be described.
如第6圖所示,實施例1、實施例2、實施例3及比較例中,基板的直徑D1係200mm(所謂的8吋晶圓)。實施例1中,盤的承載基板之面的基材所露出之部分的直徑D2為210mm。亦即,實施例1中,D2為D1的1.05倍。實施例2中,盤的承載基板之面的基材所露出之部分的直徑D2為225mm。亦即,實施例2中,D2為D1的1.125 倍。實施例3中,盤的承載基板之面的基材所露出之部分的直徑D2為230mm。亦即,實施例3中,D2為D1的1.15倍。比較例中,盤的承載基板之面的基材所露出之部分的直徑D2為250mm。亦即,比較例中,D2為D1的1.25倍。 As shown in FIG. 6, in Example 1, Example 2, Example 3 and Comparative Example, the diameter D1 of the substrate is 200 mm (so-called 8-inch wafer). In Example 1, the diameter D2 of the exposed portion of the base material on the surface of the disc carrying the substrate was 210 mm. That is, in Example 1, D2 was 1.05 times D1. In Example 2, the diameter D2 of the exposed portion of the base material on the surface of the disc carrying the substrate was 225 mm. That is, in Example 2, D2 was 1.125 times D1. In Example 3, the diameter D2 of the exposed portion of the base material on the surface of the disc carrying the substrate was 230 mm. That is, in Example 3, D2 was 1.15 times D1. In the comparative example, the diameter D2 of the portion where the base material was exposed on the surface of the disc carrying the substrate was 250 mm. That is, in the comparative example, D2 is 1.25 times of D1.
如上所述,實施例1、實施例2、實施例3及比較例中,配置基板之盤的直徑D2雖不相同,其他部分係利用同樣的條件使壓電體結晶膜成膜。 As described above, in Example 1, Example 2, Example 3, and Comparative Example, although the diameter D2 of the disk on which the substrate is placed is different, the piezoelectric crystal film is formed under the same conditions in other parts.
如第3圖所示,實施例1中,穩定地成膜為膜質良好的壓電體結晶膜。壓電體結晶膜係在基板整體大致均勻(平坦)地成膜。 As shown in FIG. 3 , in Example 1, a piezoelectric crystal film with good film quality was stably formed. The piezoelectric crystal film is formed substantially uniformly (flatly) over the entire substrate.
實施例2中,穩定地成膜為膜質良好的壓電體結晶膜。實施例2中,壓電體結晶膜係在基板整體大致均勻(平坦)地成膜。 In Example 2, a piezoelectric crystal film with good film quality was stably formed. In Example 2, the piezoelectric crystal film was formed substantially uniformly (flatly) over the entire substrate.
實施例3中,成膜為膜質良好的壓電體結晶膜。惟,亦有形成膜質不穩定的壓電體結晶膜的情況,但大致成膜為膜質良好的壓電體結晶膜。 In Example 3, a piezoelectric crystal film with good film quality was formed. However, there are cases where a piezoelectric crystal film with unstable film quality is formed, but generally a piezoelectric crystal film with good film quality is formed.
比較例中,在壓電體結晶膜的表面形成凹凸並形成混濁的膜。比較例中,在基板的中心側與外周側形成有不均勻的壓電體結晶膜。 In the comparative example, irregularities were formed on the surface of the piezoelectric crystal film to form a cloudy film. In the comparative example, the piezoelectric crystal film was formed unevenly on the center side and the outer peripheral side of the substrate.
如上述可知,在實施例1~3中,藉由使用承載基板的面的基材所露出之部分的直徑為基板的直徑之1.05倍以上1.15倍以下的盤而使壓電體結晶膜在基板成膜,可使膜質良好的壓電體結晶膜在基板穩定地成膜。 As can be seen from the above, in Examples 1 to 3, the piezoelectric crystal film is formed on the substrate by using a disk having a diameter of 1.05 times to 1.15 times the diameter of the substrate at which the substrate is exposed on the surface of the substrate. For film formation, a piezoelectric crystal film with good film quality can be stably formed on the substrate.
(變形例) (Modification)
另外,本揭示之實施形態及實施例在各方面均為例示而非有所限制者。本發明的範圍是依據申請專利範圍所示者而非上述之實施形態及實施例的說明,並且亦包含與申請專利範圍均等的意義以及在範圍內的各種變更(變形例)。 In addition, the embodiment and the Example of this indication are an illustration in every respect, and are not restrictive. The scope of the present invention is based on what is shown in the claims rather than the description of the above-mentioned embodiments and examples, and also includes the meanings equivalent to the claims and various changes (modifications) within the scope.
例如,上述實施形態中顯示了盤的定位部係沿著盤的外周形成之構造的例子,但本發明不限於此。本發明中,盤的定位部亦可分割成複數個點狀或線狀而設置。 For example, in the above-mentioned embodiments, an example in which the positioning portion of the disk is formed along the outer periphery of the disk was shown, but the present invention is not limited thereto. In the present invention, the positioning portion of the disk may be divided into a plurality of dots or lines and provided.
又,上述實施形態中顯示了盤的定位部設置在盤的周緣之構造的例子,但本發明不限於此。本發明中,盤的定位部亦可設置在與盤的周緣分離的中心側部分。 Also, in the above-mentioned embodiment, an example of the structure in which the disk positioning portion is provided on the periphery of the disk was shown, but the present invention is not limited thereto. In the present invention, the positioning portion of the disk may be provided at a center side portion separated from the periphery of the disk.
又,上述實施形態中顯示了藉由加熱器的熱輻射(放射熱)加熱基板之構造的例子,但本發明不限於此。本發明中,亦可將加熱器設置成與盤或承載座接觸,藉由熱傳導加熱基板。 In addition, in the above-mentioned embodiment, an example of the structure in which the substrate is heated by heat radiation (radiant heat) of the heater was shown, but the present invention is not limited thereto. In the present invention, the heater can also be arranged in contact with the disk or the carrier to heat the substrate by heat conduction.
又,上述實施形態中顯示了在定位部表面設置金屬的金屬化層之構造的例子,但本發明不限於此。本發明中,亦可將被覆的金屬設置在凹部等。 In addition, in the above embodiment, an example of the structure in which a metallization layer is provided on the surface of the positioning portion is shown, but the present invention is not limited thereto. In the present invention, the coated metal may also be provided in the concave portion or the like.
又,上述實施形態中顯示了壓電體結晶膜包含強電介質膜的例子,但本發明不限於此。本發明中,壓電體結晶膜亦可為強電介質膜以外的壓電體結晶膜。 Also, in the above embodiments, an example in which the piezoelectric crystal film includes a ferroelectric film was shown, but the present invention is not limited thereto. In the present invention, the piezoelectric crystal film may be a piezoelectric crystal film other than the ferroelectric film.
2‧‧‧盤 2‧‧‧disk
3‧‧‧基板 3‧‧‧substrate
13‧‧‧承載座 13‧‧‧bearing seat
20‧‧‧盤本體 20‧‧‧Disk body
21‧‧‧凹部 21‧‧‧Concave
22‧‧‧定位部 22‧‧‧Positioning Department
23‧‧‧基板承載區域 23‧‧‧Substrate carrying area
31‧‧‧本體部 31‧‧‧Body Department
32‧‧‧缺口 32‧‧‧Gap
D1‧‧‧直徑 D1‧‧‧diameter
D2‧‧‧直徑 D2‧‧‧diameter
D3‧‧‧內徑 D3‧‧‧inner diameter
D4‧‧‧外徑 D4‧‧‧outer diameter
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