TWI783404B - Stack structure and touch sensor - Google Patents

Abstract

A stacked structure, comprising: a substrate; a silver nano wire layer, which is arranged on the substrate; and a metal layer, which is arranged on the silver nano wire layer, wherein the nano silver wire layer The nano-silver wire layer system includes: a plurality of nano-silver wires; and indium tin oxide, which covers the plurality of nano-silver wires, wherein, the thickness of the interval of the nano-silver wire layer: the thickness of indium tin oxide The ratio is between 2.35 and 24. A touch sensor comprising the above stacked structure.

Description

Stack structure and touch sensor

The present invention relates to a laminated structure, especially a laminated structure comprising a nano-silver wire layer. The present invention also relates to a touch sensor, in particular to a touch sensor comprising the above-mentioned stacked structure.

The stacked structure including silver nanowires and metal layers can be applied to touch sensors. In the traditional stacked structure, the surface of the nano-silver wire is covered with a protective layer, which is made of non-conductive resin, which mainly provides anti-scratch, prevents the nano-silver wire from peeling off and improves the contact between the nano-silver wire and Substrate adhesion and other functions, and this protective layer will remain permanently on the surface of the silver nanowires and the substrate, so in order to meet the requirements of the optical characteristics of the touch sensor in the visible area, the protective layer must have high penetration, Optical properties of low haze and low b*.

Generally, the protective layer remains permanently on the surface of silver nanowires. The thickness of the protective layer plays an important key factor for the etching efficiency of silver nanowires in the etching process, and the selectivity of the etching solution is high, and non-conductive The material of the protective layer tends to increase the contact resistance and has a poor ability to suppress electrostatic discharge (ESD).

In order to improve the problem of increased contact resistance and poor ESD suppression ability caused by the use of non-conductive resin in the stacked structure of the prior art, the present invention provides a novel stacked structure and touch sensor.

In order to achieve the above and other purposes, the present invention provides a laminated structure, comprising: a substrate; a silver nanowire layer disposed on the substrate; and a metal layer disposed on the substrate On the silver nanowire layer, wherein the silver nanowire layer includes: a plurality of silver nanowires; and indium tin oxide, which covers the silver nanowires, wherein the silver nanowire Interval thickness of the layer: the ratio of the thickness of the indium tin oxide is between 2.35~24.

In the above stacked structure, the thickness of the silver nano wire layer can be between 40nm and 120nm.

In the aforementioned stacked structure, the thickness of the indium tin oxide contained in the silver nano wire layer can be between 5nm and 17nm.

In the above stacked structure, the surface resistance of the silver nano wire layer can be 5-100 ops.

The above stacked structure may further include: a second silver nanowire layer disposed under the base material; and a second metal layer disposed on the second silver nanowire layer Below, wherein, the second nano silver wire layer system includes: a plurality of nano silver wires; and indium tin oxide, which covers the plurality of nano silver wires, wherein the second nano silver wire layer Interval thickness: The ratio of the thickness of indium tin oxide is between 2.35 and 24.

To achieve the above and other purposes, the present invention also provides a touch sensor, comprising: the above-mentioned stacked structure.

In the touch sensor mentioned above, the silver nanowire layer and the metal layer in the stacked structure included in the touch sensor can be patterned.

The above-mentioned touch sensor, wherein the touch sensor can comprise two layers of the above-mentioned stacked structure, and wherein the silver nanowire layer and the metal layer can be patterned.

The touch sensor mentioned above, wherein, the silver nanowire layer, the second silver nanowire layer, the metal layer and the second metal layer in the stacked structure included in the touch sensor Can be patterned.

The stacked structure and the touch sensor of the present invention can reduce the contact impedance, suppress the impact of ESD and improve the tolerance under reliability analysis (Reliability Analysis, RA) without affecting the optics.

10:Stack structure

10': stacked structure

11: Substrate

11': Substrate

12: Nano silver wire layer

12': nano silver wire layer

13: metal layer

13': metal layer

20: Stacked structure

22: The second nano silver wire layer

23: Second metal layer

30:Touch sensor

31: photoresist

32: Operating area

33: Routing area

34: Second photoresist

40:Touch sensor

41: photoresist

42: Operating area

43: Routing area

44: Second photoresist

45: The third photoresist

46: Operating area

47: Routing area

48: The fourth photoresist

49: First Overlay

49': Second overlay

50:Touch sensor

51: photoresist

52: Operating area

53: Routing area

54: Second photoresist

Rx: sensing electrode

Tx: drive electrode

[FIG. 1] is a schematic diagram of the stacked structure of Embodiment 1 of the present invention.

[Fig. 2] is a schematic diagram of the stacked structure of Embodiment 2 of the present invention.

[ FIG. 3 ] is a schematic diagram of a touch sensor and its manufacturing process according to Embodiment 3 of the present invention.

[ FIG. 4 ] is a schematic diagram of a touch sensor and its manufacturing process according to Embodiment 4 of the present invention.

[FIG. 5] is a schematic diagram of a touch sensor and its manufacturing process according to Embodiment 5 of the present invention.

The implementation of the present invention is described below through specific examples, and those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be achieved by Other different specific embodiments are implemented or applied, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

As used in the specification and the appended claims, the singular forms "a" and "the" include plural references unless otherwise stated in the context.

Unless otherwise stated in the text, the term "or" used in the specification and the appended claims includes the meaning of "and/or".

Example 1

FIG. 1 is a schematic diagram of a stacked structure 10 according to Embodiment 1 of the present invention. As shown in Figure 1, the laminated structure 10 of embodiment 1 comprises: a base material 11; A nano silver wire layer 12, it is arranged on this base material 11; And a metal layer 13, it is arranged on On the nano-silver wire layer 12, wherein the nano-silver wire layer 12 includes: a plurality of nano-silver wire parts; and indium tin oxide, which covers the plurality of nano-silver wires.

In the stacked structure of Example 1, the ratio of the interval thickness of the silver nanowire layer: the thickness of indium tin oxide is 8 (40nm: 5nm), but the present invention is not limited thereto, as long as the ratio is between 2.35~ Between 24. Herein, the section thickness of the silver nanowire layer refers to the overall thickness of the silver nanowire layer, which includes a plurality of silver nanowire parts and ITO.

In the laminated structure of Example 1, the material of the substrate is PET, but the present invention is not limited thereto. Other suitable materials include but are not limited to: COP, CPI and UTG.

In the stacked structure of Example 1, the interval thickness of the silver nanowire layer is 40nm, but the present invention is not limited thereto. Preferably, the interval thickness of the silver nanowire layer is between 40nm and 120nm.

In the stacked structure of Example 1, the surface resistance of the silver nanowire layer is controlled at 50 ops, but the present invention is not limited thereto. Preferably, the surface resistance of the silver nanowire layer is between 5-100 ops.

In the stacked structure of Embodiment 1, the material of the metal layer is copper, but the present invention is not limited thereto. Other suitable materials include but are not limited to: molybdenum and aluminum.

The stacked structure of Example 1 can be prepared by the following procedures, but the present invention is not limited thereto: (1) take a substrate; (2) coat nano-silver wires on the substrate; (3) apply indium Tin oxide is sputtered on the substrate coated with silver nano wires to form a silver nano wire layer; and (4) covering a metal layer on the silver nano wire layer.

Example 2

FIG. 2 is a schematic diagram of a stacked structure 20 according to Embodiment 2 of the present invention. As shown in Figure 2, the stacked structure of Example 2 includes the same as the stacked structure of Example 1: a substrate 11; a silver nanowire layer 12, which is arranged on the substrate 11; and A metal layer 13, which is disposed on the silver nanowire layer 12, wherein the silver nanowire layer 12 includes: a plurality of silver nanowires; and indium tin oxide, which covers the plurality of silver nanowires nano silver wire.

Compared with Embodiment 1, the stacked structure 20 of Embodiment 2 further includes: a second silver nanowire layer 22, which is disposed under the substrate 11; and a second metal layer 23, which is disposed Under the second nano-silver wire layer 22, wherein the second nano-silver wire layer 22 comprises: a plurality of nano-silver wires; and indium tin oxide, which covers the plurality of nano-silver wires .

In the stacked structure 20 of Embodiment 2, the thickness of the second nano silver wire layer 22: the ratio of the thickness of indium tin oxide, the thickness of the second nano silver wire layer 22 and the material of the second metal layer 23 They are the same as the silver nanowire layer 12 and the metal layer 13 in Embodiment 1, and will not be repeated here.

In the stacked structure 20 of the second embodiment, the second silver nanowire layer 22 and the second metal layer 23 can be prepared according to the method exemplified in the above-mentioned embodiment 1.

Example 3

FIG. 3 is a schematic diagram of a touch sensor 30 and its manufacturing process according to Embodiment 3 of the present invention. As shown in FIG. 3 , the touch sensor 30 of Embodiment 3 includes the stacked structure 10 described in Embodiment 1, and the stacked structure 10 is patterned to meet the requirements of the touch sensor. .

As shown in FIG. 3 , the manufacturing process of the touch sensor 30 of Embodiment 3 includes: 1. Taking the stacked structure 10 of Embodiment 1; 2. Coating photoresist 31 and photoetching, wherein by coating The pattern of the photoresist 31 in the stack structure 10 defines the operation area 32 in the center and the wiring area 33 on both sides; 3. Etching the metal layer 13; 4. Removing the photoresist 31; 5. Etching the nanometer 6. Coating the second photoresist 34; 7. The second photoetching; 8. Etching the metal layer 13 for the second time; and 9. Removing the second photoresist 34 to complete the touch of embodiment 3 control sensor 30.

Example 4

FIG. 4 is a schematic diagram of a touch sensor 40 and its manufacturing process according to Embodiment 4 of the present invention. As shown in FIG. 4 , the touch sensor 40 of Embodiment 4 includes two layers of stacked structures 10 , 10 ′ as described in Embodiment 1, and these stacked structures 10 , 10 ′ are patterned, To meet the needs of touch sensors.

As shown in FIG. 4 , the manufacturing process of the touch sensor 40 in Embodiment 4 includes: 1-1 Take the stacked structure 10 of Embodiment 1; 1-2. Coating photoresist 41 and photoetching, wherein the pattern of the coated photoresist 41 defines the center of the stacked structure 10 The operation area 42 and the wiring area 43 on both sides; 1-3. Etching the metal layer 13; 1-4. Removing the photoresist 41; 1-5. Etching the nano silver wire layer 12; 1-6. Two photoresist 44; 1-7. The second photoetching; 1-8. The second etching of the metal layer 13; 1-9. Removal of the second photoresist 44 to complete the touch sensor 40 of the fourth embodiment The drive electrode Tx in ; 2-1 Take the stacked structure 10' of another embodiment 1; 2-2. Coating the third photoresist 45 and photoetching, wherein the third photoresist 45 coated 2-3. Etching the metal layer 13'; 2-4. Removing the third photoresist 45; 2- 5. Etching the silver nanowire layer 12'; 2-6. Coating the fourth photoresist 48; 2-7. The second photoetching; 2-8. Etching the metal layer 13' for the second time; 2-9. Removing the fourth photoresist 48 to complete the sensing electrode Rx in the touch sensor 40 of the fourth embodiment; 3. Set the first covering layer 49 and the second covering layer 49' on the driving electrodes Tx prepared in steps 1-9 and the sensing electrodes Rx prepared in steps 2-9 respectively, and stack the first covering layer The driving electrodes Tx and sensing electrodes Rx of the layer 49 and the second cover layer 49 ′ are used to complete the touch sensor 40 of the fourth embodiment.

Example 5

FIG. 5 is a schematic diagram of a touch sensor 50 and its manufacturing process according to Embodiment 5 of the present invention. As shown in FIG. 5 , the touch sensor 50 of Embodiment 5 includes the stacked structure 20 described in Embodiment 2, and the stacked structure 20 is patterned to meet the requirements of the touch sensor. .

As shown in FIG. 5 , the manufacturing process of the touch sensor 50 in Embodiment 5 includes: 1. Taking the stacked structure 20 in Embodiment 2; 2. Double-sided coating of photoresist 51 and photoetching, wherein by The pattern of the coated photoresist 51 defines the operation area 52 in the center and the wiring area 53 on both sides in the stacked structure 20; 3. Etching the metal layer 13 and the second metal layer 23; 4. Removing light Resist 51; 5. Etching the silver nanowire layer 12 and the second silver nanowire layer 22; 6. Double-sided coating of the second photoresist 54; 7. Photoetching for the second time; 8. Etching the metal layer for the second time 13 and the second metal layer 23; and 9. Removing the second photoresist 54 to complete the touch sensor 50 of the fifth embodiment.

Comparative example 1

In order to compare the influence of the indium tin oxide contained in the silver nanowire layer in the stacked structure of the present invention on the ESD suppression ability of the stacked structure, Comparative Example 1 prepared the stacked structure according to the description in Example 1. However, the indium tin oxide contained in the silver nano wire layer is replaced with a traditional non-conductive resin acrylic resin.

test case 1

Test Example 1 is to take the stacked structure of Example 1 and Comparative Example 1 respectively. After removing the metal layer, use an electrostatic discharge simulation device to carry out electrostatic bombardment on the stacked structure of Example 1 and Comparative Example 1 after removing the metal layer. , if the antistatic ability of the laminated structure is better, the damage caused by electrostatic bombardment is small (the change in resistance value is small), on the contrary, if the antistatic ability of the laminated structure is poor, the damage caused by electrostatic bombardment is greater, making the laminated structure The resistance value of the structural structure increases and even causes the silver nano wires contained therein to break.

The test results of Test Example 1 are shown in Table 1 below (the measurement unit is ohm):

As can be seen from the test results in Table 1, the anti-static discharge (Electrostatic discharge, ESD) ability of the stacked structure of Example 1 is obviously better than that of Comparative Example 1, which is due to the silver nanowire layer of the stacked structure of Example 1 Indium tin oxide is used to replace the traditional non-conductive resin.

test case 2

In Test Example 2, the stacked structure was set up in the manner shown in Example 1, but the thickness of the silver nanowire layer was controlled at 40nm, and the surface resistance of the silver nanowire layer was controlled at 50ops. In Test Example 2, the difference between the samples is only the ratio of the thickness of the silver nanowire layer: the thickness of the ITO.

As shown in Table 2, when the thickness of the silver nanowire layer is the same, the thickness of the indium tin oxide can provide good anti-static discharge (ESD) capability as long as it is greater than 5 nm. Further consider the influence of the thickness of indium tin oxide on the visibility of the stacked structure. When the thickness of indium tin oxide is between 5nm and 17nm, good anti-static discharge (Electrostatic discharge, ESD) ability and Visibility, if the thickness of indium tin oxide is greater than 17nm, it will have a bad effect on visibility.

Overall, the thickness of the silver nanowire layer in the stacked structure of the present invention is between 40nm and 120nm, and the thickness of indium tin oxide is between 5nm and 17nm. Therefore, in the stacked structure of the present invention, the ratio of the interval thickness of the silver nanowire layer: the thickness of indium tin oxide is between 40:17~120:5, that is, between 2.35~24.

In summary, the laminated structure and touch sensor of the present invention have at least the following excellent technical effects:

1. Indium tin oxide is used to replace the traditional non-conductive resin in the silver nanowire layer of the stack structure of the present invention, so that the etchant is more selective and can be used in the metal etching process, Use an etchant that can etch the metal layer, but will not harm the silver nanowires and indium tin oxide, And in the etching process of the etchant of silver nanometer wire and indium tin oxide, an etchant that can etch nanometer silver wire and indium tin oxide, but does not etch the metal layer is used.

2. Through the extension characteristics of the network formed by nano-silver wires and the continuous conduction characteristics of indium tin oxide, the stacked structure of the present invention can reduce contact impedance, suppress ESD effects and improve Tolerance under reliability analysis.

3. In response to the mainstream indium tin oxide conductive film in the market today, the nano-silver wire film technology can be quickly introduced into the existing indium tin oxide optical film process without too much impact on the change of the production line process, combining the advantages of the two materials at the same time Can have better optical and conductive properties.

The above-mentioned embodiments are only illustrative of the present invention, not intended to limit the present invention. Anyone skilled in the art can make modifications and changes to the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be set forth in the scope of patent application described later.

10:Stack structure

11: Substrate

12: Nano silver wire layer

13: metal layer

Claims (10)

A stacked structure, comprising: a substrate; a silver nano wire layer, which is arranged on the substrate; and a metal layer, which is arranged on the silver nano wire layer, wherein the nano silver wire layer The nano-silver wire layer system includes: a plurality of nano-silver wires; and indium tin oxide, which covers the plurality of nano-silver wires, wherein, the thickness of the interval of the nano-silver wire layer: the thickness of indium tin oxide The ratio is between 2.35 and 24. The stacked structure according to claim 1, wherein the thickness of the silver nanowire layer is between 40nm and 120nm. The stacked structure according to claim 1, wherein the thickness of the indium tin oxide included in the silver nano wire layer is between 5nm and 17nm. The stacked structure according to any one of claims 1 to 3, wherein the surface resistance of the silver nanowire layer is 5-100 ops. The stacked structure according to any one of claims 1 to 3, further comprising: a second silver nanowire layer disposed under the base material; and a second metal layer disposed under the base material Under the second nano-silver wire layer, wherein the second nano-silver wire layer includes: a plurality of nano-silver wires; and indium tin oxide, which covers the plurality of nano-silver wires, Wherein, the ratio of the interval thickness of the second nano silver wire layer: the thickness of indium tin oxide is between 2.35-24. A touch sensor, comprising: the stacked structure according to any one of claims 1 to 4. The touch sensor according to claim 6, wherein the silver nanowire layer and the metal layer are patterned. The touch sensor as described in claim 6, wherein the touch sensor comprises 2 layers of the stacked structure as described in any one of claims 1 to 4, and wherein the silver nanowire layer and the metal layer are patterned. A touch sensor, comprising: the stacked structure described in Claim 5. The touch sensor according to claim 9, wherein the silver nanowire layer, the second silver nanowire layer, the metal layer and the second metal layer are patterned.

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