TW202236065A - Laminated structure and touch sensor including a base material, a nano-silver wire layer and a metal layer - Google Patents

Abstract

A laminated structure includes: a base material; a nano-silver wire layer arranged on the base material; and a metal layer arranged on the nano-silver wire layer, wherein the nano-silver wire layer comprises: a plurality of silver nanowires and an indium tin oxide, which covers the plurality of silver nanowires, wherein the ratio between the thickness of the silver nanowire layer and the thickness of the indium tin oxide is from 2.35 to 24. A touch sensor including the aforementioned stacked structure is also disclosed.

Description

Stack structure and touch sensor

The present invention relates to a laminated structure, especially a laminated structure comprising a nano-silver wire layer. The present invention also relates to a touch sensor, in particular to a touch sensor comprising the above-mentioned stacked structure.

The stacked structure including silver nanowires and metal layers can be applied to touch sensors. In the traditional stacked structure, the surface of the nano-silver wire is covered with a protective layer, which is made of non-conductive resin, which mainly provides anti-scratch, prevents the nano-silver wire from peeling off and improves the contact between the nano-silver wire and Substrate adhesion and other functions, and this protective layer will remain permanently on the surface of the silver nanowires and the substrate, so in order to meet the requirements of the optical characteristics of the touch sensor in the visible area, the protective layer must have high penetration, Optical properties of low haze and low b*.

Generally, the protective layer remains permanently on the surface of silver nanowires. The thickness of the protective layer plays an important key factor for the etching efficiency of silver nanowires in the etching process, and the selectivity of the etching solution is high, and non-conductive The material of the protective layer tends to increase the contact resistance, and has a poor ability to suppress electrostatic discharge (ESD).

In order to improve the problem of increased contact resistance and poor ESD suppression ability caused by the use of non-conductive resin in the stacked structure of the prior art, the present invention provides a novel stacked structure and touch sensor.

In order to achieve the above and other purposes, the present invention provides a stacked structure, comprising: a substrate; A silver nanowire layer, which is disposed on the substrate; and a metal layer, which is arranged on the silver nano wire layer, Wherein, the silver nanowire layer system includes: a plurality of silver nanowires; and indium tin oxide, which covers the plurality of nano silver wires, Wherein, the ratio of the interval thickness of the silver nano wire layer: the thickness of indium tin oxide is between 2.35-24.

In the above stacked structure, the thickness of the silver nanowire layer can be between 40 nm and 120 nm.

In the aforementioned stacked structure, the thickness of the indium tin oxide contained in the silver nano wire layer can be between 5 nm and 17 nm.

In the above stacked structure, the surface resistance of the silver nano wire layer can be 5-100 ops.

The above-mentioned stacked structure may further include: A second silver nanowire layer, which is disposed under the substrate; and a second metal layer, which is arranged under the second silver nanowire layer, Wherein, the second nano silver wire layer system includes: a plurality of silver nanowires; and indium tin oxide, which covers the plurality of nano silver wires, Wherein, the ratio of the interval thickness of the second nano silver wire layer: the thickness of indium tin oxide is between 2.35-24.

To achieve the above and other purposes, the present invention also provides a touch sensor, comprising: The above-mentioned stacked structure.

In the touch sensor mentioned above, the silver nanowire layer and the metal layer in the stacked structure included in the touch sensor can be patterned.

The above-mentioned touch sensor, wherein the touch sensor can comprise two layers of the above-mentioned stacked structure, and wherein the silver nanowire layer and the metal layer can be patterned.

The touch sensor mentioned above, wherein, the silver nanowire layer, the second silver nanowire layer, the metal layer and the second metal layer in the stacked structure included in the touch sensor Can be patterned.

The stacked structure and the touch sensor of the present invention can reduce the contact impedance, suppress the impact of ESD and improve the tolerance under reliability analysis (Reliability Analysis, RA) without affecting the optics.

The implementation of the present invention is described below through specific examples, and those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

As used in the specification and the appended claims, the singular forms "a" and "the" include plural references unless otherwise stated in the context.

Unless otherwise stated in the text, the term "or" used in the specification and the appended claims includes the meaning of "and/or".

Example 1

FIG. 1 is a schematic diagram of a stacked structure 10 according to Embodiment 1 of the present invention. As shown in Figure 1, the laminated structure 10 of embodiment 1 comprises: a base material 11; A nano silver wire layer 12, it is arranged on this base material 11; And a metal layer 13, it is arranged on On the nano-silver wire layer 12, wherein the nano-silver wire layer 12 includes: a plurality of nano-silver wire parts; and indium tin oxide, which covers the plurality of nano-silver wires.

In the stacked structure of Example 1, the ratio of the interval thickness of the silver nanowire layer: the thickness of indium tin oxide is 8 (40nm: 5nm), but the present invention is not limited thereto, as long as the ratio is between 2.35~ Between 24. Herein, the section thickness of the silver nanowire layer refers to the overall thickness of the silver nanowire layer, which includes a plurality of silver nanowire parts and ITO.

In the laminated structure of Example 1, the material of the substrate is PET, but the present invention is not limited thereto. Other suitable materials include but are not limited to: COP, CPI and UTG.

In the stacked structure of Example 1, the interval thickness of the silver nanowire layer is 40 nm, but the present invention is not limited thereto. Preferably, the interval thickness of the silver nanowire layer is between 40 and 120 nm .

In the stacked structure of Example 1, the surface resistance of the silver nanowire layer is controlled at 50 ops, but the present invention is not limited thereto. Preferably, the surface resistance of the silver nanowire layer is between 5 and 100 ops between.

In the stacked structure of Embodiment 1, the material of the metal layer is copper, but the present invention is not limited thereto. Other suitable materials include but are not limited to: molybdenum and aluminum.

The stacked structure of Example 1 can be prepared by the following process, but the present invention is not limited thereto: (1) Take a substrate; (2) Coating nano-silver wires on the substrate; (3) sputtering indium tin oxide onto the substrate coated with silver nanowires to form a layer of silver nanowires; and (4) Covering a metal layer on the silver nano wire layer.

Example 2

FIG. 2 is a schematic diagram of a stacked structure 20 according to Embodiment 2 of the present invention. As shown in Figure 2, the stacked structure of Example 2 includes the same as the stacked structure of Example 1: a substrate 11; a silver nanowire layer 12, which is arranged on the substrate 11; and A metal layer 13, which is disposed on the silver nanowire layer 12, wherein the silver nanowire layer 12 includes: a plurality of silver nanowires; and indium tin oxide, which covers the plurality of silver nanowires nano silver wire.

Compared with Embodiment 1, the stacked structure 20 of Embodiment 2 further includes: a second silver nanowire layer 22, which is disposed under the substrate 11; and a second metal layer 23, which is disposed Under the second nano-silver wire layer 22, wherein the second nano-silver wire layer 22 comprises: a plurality of nano-silver wires; and indium tin oxide, which covers the plurality of nano-silver wires .

In the stacked structure 20 of Embodiment 2, the thickness of the second nano silver wire layer 22: the ratio of the thickness of indium tin oxide, the thickness of the second nano silver wire layer 22 and the material of the second metal layer 23 They are the same as the silver nanowire layer 12 and the metal layer 13 in Embodiment 1, and will not be repeated here.

In the stacked structure 20 of the second embodiment, the second silver nanowire layer 22 and the second metal layer 23 can be prepared according to the method exemplified in the above-mentioned embodiment 1.

Example 3

FIG. 3 is a schematic diagram of a touch sensor 30 and its manufacturing process according to Embodiment 3 of the present invention. As shown in FIG. 3 , the touch sensor 30 of Embodiment 3 includes the stacked structure 10 described in Embodiment 1, and the stacked structure 10 is patterned to meet the requirements of the touch sensor. .

As shown in FIG. 3 , the manufacturing process of the touch sensor 30 in Embodiment 3 includes: 1. Take the stacked structure 10 of Embodiment 1; 2. Coating the photoresist 31 and photoetching, wherein the pattern of the coated photoresist 31 defines the operation area 32 in the center and the routing area 33 on both sides in the stacked structure 10; 3. Etching the metal layer 13; 4. Remove the photoresist 31; 5. Etching the silver nano wire layer 12; 6. Coating the second photoresist 34; 7. The second photoetching; 8. Etching the metal layer 13 a second time; and 9. Remove the second photoresist 34 to complete the touch sensor 30 of the third embodiment.

Example 4

FIG. 4 is a schematic diagram of a touch sensor 40 and its manufacturing process according to Embodiment 4 of the present invention. As shown in FIG. 4 , the touch sensor 40 of Embodiment 4 includes two layers of stacked structures 10 , 10 ′ as described in Embodiment 1, and these stacked structures 10 , 10 ′ are patterned, To meet the needs of touch sensors.

As shown in FIG. 4 , the manufacturing process of the touch sensor 40 in Embodiment 4 includes: 1-1 Take the stacked structure 10 of Embodiment 1; 1-2. Coating photoresist 41 and photoetching, wherein the pattern of the coated photoresist 41 defines the operation area 42 in the center and the wiring area 43 on both sides in the stacked structure 10; 1-3. Etching the metal layer 13; 1-4. Removing the photoresist 41; 1-5. Etching the silver nano wire layer 12; 1-6. Coating the second photoresist 44; 1-7. The second photoetching; 1-8. Etching the metal layer 13 for the second time; 1-9. Removing the second photoresist 44 to complete the driving electrode Tx in the touch sensor 40 of Embodiment 4; 2-1 Take the stacked structure 10' of another embodiment 1; 2-2. Coating the third photoresist 45 and photoetching, wherein the pattern of the coated third photoresist 45 defines in the stacked structure 10' the operation region 46 in the center and the operation region 46 on both sides Routing area 47; 2-3. Etching the metal layer 13'; 2-4. removing the third photoresist 45; 2-5. Etching the silver nano wire layer 12'; 2-6. Coating the fourth photoresist 48; 2-7. The second photoetching; 2-8. Etching the metal layer 13' for the second time; 2-9. Remove the fourth photoresist 48 to complete the sensing electrode Rx in the touch sensor 40 of the fourth embodiment; 3. Set the first covering layer 49 and the second covering layer 49' on the driving electrodes Tx prepared in steps 1-9 and the sensing electrodes Rx prepared in steps 2-9 respectively, and stack the first covering layer The driving electrodes Tx and sensing electrodes Rx of the layer 49 and the second cover layer 49 ′ are used to complete the touch sensor 40 of the fourth embodiment.

Example 5

FIG. 5 is a schematic diagram of a touch sensor 50 and its manufacturing process according to Embodiment 5 of the present invention. As shown in FIG. 5 , the touch sensor 50 of Embodiment 5 includes the stacked structure 20 described in Embodiment 2, and the stacked structure 20 is patterned to meet the requirements of the touch sensor. .

As shown in FIG. 5 , the manufacturing process of the touch sensor 50 in Embodiment 5 includes: 1. Take the stacked structure 20 of Embodiment 2; 2. Double-sided coating of photoresist 51 and photoetching, wherein the pattern of the coated photoresist 51 defines the operation area 52 in the center and the wiring area 53 on both sides in the stacked structure 20; 3. Etching the metal layer 13 and the second metal layer 23; 4. Remove photoresist 51; 5. Etching the silver nanowire layer 12 and the second silver nanowire layer 22; 6. Double-side coated second photoresist 54; 7. The second photoetching; 8. Etching the metal layer 13 and the second metal layer 23 for the second time; and 9. Remove the second photoresist 54 to complete the touch sensor 50 of the fifth embodiment.

Comparative example 1

In order to compare the influence of the indium tin oxide contained in the silver nanowire layer in the stacked structure of the present invention on the ESD suppression ability of the stacked structure, Comparative Example 1 prepared the stacked structure according to the description in Example 1. However, the indium tin oxide contained in the silver nano wire layer is replaced with a traditional non-conductive resin acrylic resin.

test case 1

Test Example 1 is to take the stacked structure of Example 1 and Comparative Example 1 respectively. After removing the metal layer, use an electrostatic discharge simulation device to carry out electrostatic bombardment on the stacked structure of Example 1 and Comparative Example 1 after removing the metal layer. , if the antistatic ability of the laminated structure is better, the damage caused by electrostatic bombardment is small (the change in resistance value is small), on the contrary, if the antistatic ability of the laminated structure is poor, the damage caused by electrostatic bombardment is greater, making the laminated structure The resistance value of the structural structure increases and even causes the silver nano wires contained therein to break.

The test results of Test Example 1 are shown in Table 1 below (the measurement unit is ohm):

Table 1 Test voltage (kV) 0 1 3 5 8 10 15 30 Comparative example 1 1370 1376 1470 1530 x x x x Example 1 25 24.6 24.63 25 24.52 24.76 24.70 25.30

As can be seen from the test results in Table 1, the anti-static discharge (Electrostatic discharge, ESD) ability of the stacked structure of Example 1 is obviously better than that of Comparative Example 1, which is due to the silver nanowire layer of the stacked structure of Example 1. Indium tin oxide is used to replace the traditional non-conductive resin.

test case 2

In Test Example 2, the stacked structure was set up in the manner shown in Example 1, but the thickness of the silver nanowire layer was controlled at 40 nm, and the surface resistance of the silver nanowire layer was controlled at 50 ops. In Test Example 2, the difference between the samples is only the ratio of the thickness of the silver nanowire layer: the thickness of the ITO.

Table 2 Indium Tin Oxide Thickness 0 1kV 8kV 15kV 30kV 0 nm 1.64 kΩ 1.7 kΩ x x x 5 nm 0.63 kΩ 0.69 kΩ 0.84 kΩ 90 kΩ x 17 nm 0.1 kΩ 0.1 kΩ 0.095 kΩ 0.113 kΩ 0.111 kΩ

As shown in Table 2, when the thickness of the silver nanowire layer is the same, the thickness of the indium tin oxide can provide good anti-static discharge (Electrostatic discharge, ESD) ability as long as it is greater than 5 nm. Further consider the influence of the thickness of indium tin oxide on the visibility of the stacked structure. When the thickness of indium tin oxide is between 5 nm and 17 nm, good anti-static discharge (ESD) can be taken into account. Visibility and visibility, if the thickness of indium tin oxide is greater than 17 nm, it will have a bad impact on visibility.

Overall, the thickness of the silver nanowire layer in the stacked structure of the present invention is between 40-120 nm, and the thickness of the indium tin oxide is between 5 nm-17 nm. Therefore, in the stacked structure of the present invention, the ratio of the interval thickness of the silver nanowire layer: the thickness of indium tin oxide is between 40:17~120:5, that is, between 2.35~24.

In summary, the laminated structure and touch sensor of the present invention have at least the following excellent technical effects: 1. Indium tin oxide is used in the silver nano wire layer of the stack structure of the present invention to replace the traditional non-conductive resin, making it easier to select the etchant, so that it can be used in the metal etching process, Use an etchant that can etch the metal layer, but will not harm the silver nanowires and indium tin oxide, and use an etchable nanosilver wire in the etching process of the etchant for the silver nanowires and indium tin oxide And the etchant of indium tin oxide, but not the etchant of the metal layer. 2. Through the extension characteristics of the network formed by nano-silver wires and the continuous conduction characteristics of indium tin oxide, the stacked structure of the present invention can reduce contact impedance, suppress ESD effects and improve Tolerance under reliability analysis. 3. In response to the mainstream indium tin oxide conductive film in the market today, the nano-silver wire film technology can be quickly introduced into the existing indium tin oxide optical film process without too much impact on the change of the production line process, combining the advantages of the two materials at the same time Can have better optical and conductive properties.

The above-mentioned embodiments are only illustrative of the present invention, not intended to limit the present invention. Anyone skilled in the art can make modifications and changes to the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be set forth in the scope of patent application described later.

10:Stack structure 10': stacked structure 11: Substrate 11': Substrate 12: Nano silver wire layer 12': nano silver wire layer 13: metal layer 13': metal layer 20: Stacked structure 22: The second nano silver wire layer 23: Second metal layer 30:Touch sensor 31: photoresist 32: Operating area 33: Routing area 34: Second photoresist 40:Touch sensor 41: photoresist 42: Operating area 43: Routing area 44: Second photoresist 45: The third photoresist 46: Operating area 47: Routing area 48: The fourth photoresist 49: First Overlay 49': Second overlay 50:Touch sensor 51: photoresist 52: Operating area 53: Routing area 54: Second photoresist Rx: sensing electrode Tx: drive electrode

[Fig. 1] is a schematic diagram of the stacked structure of Embodiment 1 of the present invention. [Fig. 2] is a schematic diagram of the stacked structure of Embodiment 2 of the present invention. [ FIG. 3 ] is a schematic diagram of the touch sensor and its manufacturing process according to Embodiment 3 of the present invention. [ FIG. 4 ] is a schematic diagram of the touch sensor and its manufacturing process according to Embodiment 4 of the present invention. [ FIG. 5 ] is a schematic diagram of a touch sensor and its manufacturing process according to Embodiment 5 of the present invention.

10:Stack structure

11: Substrate

12: Nano silver wire layer

13: metal layer

Claims (9)

A stacked structure comprising: a substrate; A silver nanowire layer, which is disposed on the substrate; and a metal layer, which is arranged on the silver nano wire layer, Wherein, the silver nanowire layer system includes: a plurality of silver nanowires; and indium tin oxide, which covers the plurality of nano silver wires, Wherein, the ratio of the interval thickness of the silver nano wire layer: the thickness of indium tin oxide is between 2.35-24. The stacked structure as described in Claim 1, wherein the thickness of the silver nano wire layer is between 40-120 nm. The stacked structure as claimed in item 1, wherein the thickness of the indium tin oxide included in the silver nano wire layer is between 5 nm and 17 nm. The stacked structure according to any one of claims 1 to 3, wherein the surface resistance of the silver nano wire layer is 5-100 ops. The stacked structure according to any one of claims 1 to 3, further comprising: A second silver nanowire layer, which is disposed under the substrate; and a second metal layer, which is arranged under the second silver nanowire layer, Wherein, the second nano silver wire layer system includes: a plurality of silver nanowires; and indium tin oxide, which covers the plurality of nano silver wires, Wherein, the ratio of the interval thickness of the second nano silver wire layer: the thickness of indium tin oxide is between 2.35-24. A touch sensor comprising: The laminated structure as described in any one of claims 1 to 5. The touch sensor as described in claim 6, wherein the touch sensor comprises the stacked structure as described in any one of claims 1 to 4, and wherein the silver nanowire layer and The metal layer is patterned. The touch sensor as described in claim 6, wherein the touch sensor comprises 2 layers of the stacked structure as described in any one of claims 1 to 4, and wherein the silver nanowire layer and the metal layer are patterned. The touch sensor as described in claim 6, wherein the touch sensor comprises the stacked structure as described in claim 5, and wherein the silver nanowire layer, the second silver nanowire layer, the metal layer and the second metal layer are patterned.

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