TWI779899B - Display device - Google Patents

Abstract

A display device includes a first conductive layer, a first insulating layer, semiconductor channels, a second conductive layer, a second insulating layer and a light shielding layer. The first conductive layer includes scan lines and gates connected to the scan lines. The first insulating layer is located above the first conductive layer. The second conductive layer is located above the first insulating layer and includes data lines, touch signal lines, gate signal lines, sources, and drains. The second insulating layer is located above the second conductive layer. The light shielding layer is located above the second insulating layer and includes touch electrodes and pixel electrodes separated from the touch electrodes. Each touch electrode overlaps corresponding semiconductor channels, and each touch electrode is electrically connected to at least one corresponding touch signal line. The pixel electrodes are electrically connected to the drain electrodes, respectively.

Description

display device

The invention relates to a display device.

In order to meet the requirements of modern people who want to be able to grasp information at any time, new electronic display devices have been proposed one after another due to the ever-changing electronic technology. Electronic paper using electrophoretic display panel (electrophoretic display, EPD), because the effect of image display is similar to the appearance of ink on paper, so it is easier for users to watch for a long time. Rather, it is commonly found on devices used to read e-books. In addition, the electrophoretic display panel (EPD) also has the advantage of low power consumption, and is suitable for many portable electronic devices.

The invention provides a display device with the advantage of low cost.

A display device of the present invention includes a first substrate, a first conductive layer, a first insulating layer, a plurality of semiconductor channels, a second conductive layer, a second insulating layer and a light-shielding layer. The first conductive layer is located on the first substrate and includes a plurality of scan lines extending along a first direction and a plurality of gates connected to the scan lines. The first insulating layer is located on the first conductive layer. The semiconductor channels are located on the first insulating layer and overlap the gates respectively. The second conductive layer is located on the first insulating layer and includes multiple data lines, multiple touch signal lines, multiple gate signal lines, multiple sources and multiple drains. The data lines, the touch signal lines and the gate signal lines extend along the second direction. The gate signal line is electrically connected to the scan line. The source is connected to the data line. The second insulating layer is located on the second conductive layer. The light-shielding layer is located on the second insulating layer, and includes a plurality of touch electrodes and a plurality of pixel electrodes separated from the touch electrodes. Each touch electrode overlaps a plurality of corresponding semiconductor channels, and each touch electrode is electrically connected to at least one corresponding touch signal line. The pixel electrodes are respectively electrically connected to the drain.

Based on the above, both the touch electrode and the pixel electrode belong to the light-shielding layer and can be formed together, so the manufacturing cost of the display device can be saved.

FIG. 1A is a schematic top view of a display device according to an embodiment of the present invention, wherein FIG. 1A shows the first substrate 100, the driving circuit 200, the touch electrodes TE, and the touch signal lines TL, and the drawing is omitted. other components.

Please refer to FIG. 1A , the display device 10 includes a first substrate 100 , a driving circuit 200 , touch electrodes TE, and touch signal lines TL. The driving circuit 200 , the touch electrodes TE, and the touch signal lines TL are located on the first substrate 100 .

The touch electrodes TE are located in the display area 12 of the display device 10 . The touch electrodes TE are separated from each other. Each touch electrode TE corresponds to a plurality of pixel electrodes (not shown in FIG. 1 ). In FIG. 1 , the touch electrodes TE are shown as rectangles, but the present invention is not limited thereto. Actually, each touch electrode TE includes a mesh structure with holes, and each pixel electrode is disposed in the corresponding hole of the corresponding touch electrode TE.

Each touch electrode TE is electrically connected to at least one corresponding touch signal line TL. In this embodiment, each touch electrode TE is electrically connected to two touch signal lines TL, and the aforementioned two touch signal lines TL are electrically connected to each other in the peripheral area 14 of the display device 10 and are electrically connected to each other. to the driver circuit 200 in the peripheral area 14 .

In this embodiment, each touch electrode TE is electrically connected to at least one corresponding touch signal line TL through a plurality of connection structures CS.

FIG. 1B is a schematic diagram of a partial circuit according to an embodiment of the present invention. FIG. 1B corresponds to a part of one of the touch electrodes TE of the display device 10 in FIG. 1A , for example.

Please refer to FIG. 1B , in the present embodiment, the display device 10 includes a plurality of scan lines SL, a plurality of data lines DL, a plurality of touch signal lines TL and a plurality of gate signal lines GL.

The scan line SL extends along the first direction E1. The data lines DL, the touch signal lines TL and the gate signal lines GL extend along the second direction E2. The data lines DL, the touch signal lines TL and the gate signal lines GL are parallel to each other. The first direction E1 intersects with the second direction E2. In this embodiment, the first direction E1 is perpendicular to the second direction E2.

The gate signal line GL is electrically connected to the scan line SL. The plurality of active devices T are electrically connected to corresponding scan lines SL, corresponding data lines DL and corresponding pixel electrodes PE.

In some embodiments, the width of the display area of the display device 10 in the first direction E1 is larger than the width in the second direction E2. Therefore, in the display area of the display device 10 , more wires can be arranged in the first direction E1 . Therefore, even if the data lines DL, the touch signal lines TL and the gate signal lines GL are all arranged in the first direction E1, the pixel can still have a sufficient area of the opening area. In some embodiments, the number of scan lines SL is smaller than the number of data lines DL, that is, the number of sub-pixels arranged in the second direction E2 is smaller than the number of sub-pixels arranged in the first direction E1.

FIG. 2A is a schematic top view of a display device according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view along lines a-a', b-b' and c-c' in Fig. 2A. FIG. 2A corresponds to a part of one of the touch electrodes TE of the display device 10 in FIG. 1 , for example.

2A and 2B, the display device 10 includes a first substrate 100, a first conductive layer M1, a first insulating layer 110 (not shown in FIG. 2A), a plurality of semiconductor channels CH, a second conductive layer M2, a second The insulating layer 120 (not shown in FIG. 2A ) and the light shielding layer M3. In this embodiment, the display device 10 further includes a flat layer 130 (not shown in FIG. 2A ), a second substrate 300 (not shown in FIG. 2A ), a common electrode 310 (not shown in FIG. 2A ), an electrophoretic display medium layer EP (not shown in FIG. 2A ) and an oxide conductive layer OL (not shown in FIG. 2A ).

The first substrate 100 can be a rigid substrate or a flexible substrate, and the material can be glass, quartz, plastic or other suitable materials.

The first conductive layer M1 is located on the first substrate 100 and includes a plurality of scan lines SL extending along the first direction E1 and a plurality of gates G connected to the scan lines SL. In this embodiment, the first conductive layer M1 further includes a plurality of reflective electrodes RE. In this embodiment, the reflective electrode RE is separated from the scan line SL and the gate G.

The scanning line SL, the gate electrode G, and the reflective electrode RE include the same material, such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc and other metals, the above-mentioned alloys, the above-mentioned Metal oxides, the aforementioned metal nitrides, or combinations thereof, or other conductive materials. In some embodiments, the method for forming the scan line SL, the gate G, and the reflective electrode RE includes: depositing a conductive material on the first substrate 100, and then patterning the aforementioned conductive material to form the scan line SL, the gate G, and the reflective electrode RE. Electrode RE.

The first insulating layer 110 is located on the first conductive layer M1. The first insulating layer 110 covers the scan line SL, the gate G and the reflective electrode RE.

The semiconductor channels CH are located on the first insulating layer 110 and overlap the gates G respectively. In this embodiment, each semiconductor channel CH overlaps with a corresponding gate G. The semiconductor channel CH is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium gallium zinc oxide or other suitable materials, or combinations of the above materials) or other suitable materials or combinations of the above materials.

The second conductive layer M2 is located on the first insulating layer 110 and includes a plurality of data lines DL, a plurality of touch signal lines TL, a plurality of gate signal lines GL, a plurality of sources S and a plurality of drains D. The data lines DL, the touch signal lines TL and the gate signal lines GL extend along the second direction E2. The source S is connected to the data line DL, and the drain D is separated from the source S. In this embodiment, the second conductive layer M2 further includes a plurality of capacitive electrodes CE. The capacitive electrodes CE arranged in the second direction E2 are connected to each other.

The data line DL, the touch signal line TL, the gate signal line GL, the source S, the drain D, and the capacitor electrode CE include the same material, such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, Neodymium, titanium, tantalum, aluminum, zinc and other metals, the above-mentioned alloys, the above-mentioned metal oxides, the above-mentioned metal nitrides or the combination of the above-mentioned or other conductive materials. In some embodiments, the method for forming the data line DL, the touch signal line TL, the gate signal line GL, the source S, the drain D, and the capacitor electrode CE includes: depositing a conductive material on the first insulating layer 110, and then The aforementioned conductive material is patterned to form data lines DL, touch signal lines TL, gate signal lines GL, source S, drain D, and capacitor electrodes CE.

In this embodiment, the active device T includes a gate G, a semiconductor channel CH, a source S and a drain D. As shown in FIG. An active element T is set in each sub-pixel.

The second insulating layer 120 is located on the second conductive layer M2. The second insulating layer 120 covers the data line DL, the touch signal line TL, the gate signal line GL, the source S, the drain D and the capacitor electrode CE.

The planarization layer 130 is on the second insulating layer 120 . In this embodiment, the flat layer 130 has an opening O1 (not shown in FIG. 2A ) and an opening O2 . The opening O1 overlaps the touch signal line TL, and the opening O2 overlaps the capacitive electrode CE.

The light shielding layer M3 is located on the second insulating layer 120 and includes a plurality of touch electrodes TE and a plurality of pixel electrodes PE separated from the touch electrodes TE. Each pixel electrode PE is filled into the through hole 122 of the second insulating layer 120 and electrically connected to the drain D. The touch electrodes TE surround corresponding plurality of pixel electrodes PE.

The capacitive electrode CE and the reflective electrode RE overlap the pixel electrode PE. In this embodiment, the pixel electrode PE is at least partially disposed in the opening O2 of the flat layer 130 , thereby increasing the capacitance between the pixel electrode PE and the capacitance electrode CE. In this embodiment, opposite sides of the second insulating layer 120 respectively contact the pixel electrode PE and the capacitor electrode CE.

In this embodiment, the touch electrodes TE are located on the flat layer 130 . The touch electrodes TE overlap the corresponding plurality of semiconductor channels CH. The touch electrode TE can be used for shielding light, so as to prevent the active element T from leaking electricity caused by the light irradiating the semiconductor channel CH.

Each touch electrode TE is electrically connected to at least one corresponding touch signal line TL. In this embodiment, the touch electrodes TE are electrically connected to the corresponding touch signal lines TL through the connection structures CS located in the opening O1 of the planar layer 130 .

In this embodiment, each touch electrode TE includes a mesh structure MS and a plurality of shielding structures SS. The mesh structure MS has a plurality of holes H. The shade structure SS connects the mesh structure MS. Each shielding structure SS overlaps a corresponding semiconductor channel CH, and each shielding structure SS and each pixel electrode PE are located in a corresponding hole H of the mesh structure MS.

The touch electrodes TE and the pixel electrodes PE include the same material. For example, the touch electrodes TE and the pixel electrodes PE include metals, such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc and other metals, the above alloys or combination of the above. In some embodiments, the method for forming the touch electrode TE and the pixel electrode PE includes: depositing a conductive material on the second insulating layer 120 and the planar layer 130, and then patterning the aforementioned conductive material to form the touch electrode TE and the pixel electrode PE. Plain electrode PE.

The oxide conductive layer OL (not drawn in FIG. 2A ) is formed on the light shielding layer M3. The oxide conductive layer OL covers the light shielding layer M3. In some embodiments, the area of the conductive oxide layer OL is greater than or equal to the area of the light shielding layer M3. In this embodiment, the material of the light-shielding layer M3 includes metal, and the conductive oxide layer OL is suitable for protecting the light-shielding layer M3 to avoid oxidation of the light-shielding layer M3. In some embodiments, the material of the conductive oxide layer OL includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above.

The second substrate 300 overlaps the first substrate 100 . The second substrate 300 can be a rigid substrate or a flexible substrate, and the material can be glass, quartz, plastic or other suitable materials.

The common electrode 310 is located on the second substrate 300 and overlaps the plurality of pixel electrodes PE. The common electrode 310 is a transparent conductive electrode, and its material includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above.

The electrophoretic display medium layer EP is located between the first substrate 100 and the second substrate 300 . In this embodiment, the electrophoretic display medium layer EP is located between the common electrode 310 and the pixel electrode PE. In some embodiments, the display device 10 is, for example, an electronic paper with a touch function, but the present invention is not limited thereto.

Based on the above, in this embodiment, both the touch electrodes TE and the pixel electrodes PE belong to the light-shielding layer M3 and can be formed together, so the manufacturing cost of the display device 10 can be saved.

FIG. 3 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 3 follows the component numbers and part of the content of the embodiment in FIG. 2A and FIG. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The difference between the display device 20 in FIG. 3 and the display device 10 in FIG. 2B is that the display device 20 includes a cover layer 300'.

Referring to FIG. 3, a cover layer 300' is formed on the electrophoretic display medium layer EP, and a common electrode 310 is formed on the cover layer 300'. In this embodiment, the material of the covering layer 300' includes an insulating material.

FIG. 4 is a schematic top view of a display device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 4 follows the component numbers and part of the content of the embodiment in FIG. 1A and FIG. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The difference between the display device 30 in FIG. 4 and the display device 10 in FIG. 1A is that the display device 30 is a double-sided driving touch device.

Please refer to FIG. 4 , in this embodiment, both ends of each touch signal line TL are electrically connected to the driving circuit 200 , so as to improve the influence of the resistive-capacitive load on the touch quality.

10, 20, 30: Display device 12: Display area 14: Surrounding area 100: first substrate 110: the first insulating layer 120: second insulating layer 122: Through hole 130: flat layer 200: drive circuit 300: second substrate 300': Overlay 310: common electrode CH: semiconductor channel CS: Connection Structure D: drain DL: data line E1: first direction E2: Second direction EP: electrophoretic display medium layer G: Gate GL: gate signal line H: hole M1: the first conductive layer M2: second conductive layer M3: shading layer MS: mesh structure O1, O2: open OL: oxide conductive layer PE: pixel electrode RE: reflective electrode S: source SL: scan line SS: Shielding Structure T: active component TE: touch electrode TL: touch signal line

FIG. 1A is a schematic top view of a display device according to an embodiment of the present invention. FIG. 1B is a schematic diagram of a partial circuit according to an embodiment of the present invention. FIG. 2A is a schematic top view of a display device according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view along lines a-a', b-b' and c-c' in Fig. 2A. FIG. 3 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. FIG. 4 is a schematic top view of a display device according to an embodiment of the present invention.

122: Through hole

CH: semiconductor channel

CE: capacitive electrode

CS: Connection Structure

D: drain

DL: data line

E1: first direction

E2: Second direction

G: gate

GL: gate signal line

H: hole

M1: the first conductive layer

M2: second conductive layer

M3: shading layer

MS: mesh structure

O2: Open

PE: pixel electrode

RE: reflective electrode

S: source

SL: scan line

SS: Shielding Structure

T: active component

TE: touch electrode

TL: touch signal line

Claims (9)

A display device, comprising: a first substrate; a first conductive layer located on the first substrate, and comprising: a plurality of scanning lines extending along a first direction; and a plurality of gates connecting the Scanning lines; a first insulating layer located on the first conductive layer; a plurality of semiconductor channels located on the first insulating layer and respectively overlapping the gates; a second conductive layer located on the first on the insulating layer, and includes: a plurality of data lines, a plurality of touch signal lines and a plurality of gate signal lines, extending along a second direction, wherein the gate signal lines are electrically connected to the scan lines a plurality of capacitive electrodes; and a plurality of sources and a plurality of drains, wherein the sources are connected to the data lines; and a second insulating layer is located on the second conductive layer; and a light shielding layer is located On the second insulating layer, including: a plurality of touch electrodes, wherein each of the touch electrodes overlaps with a plurality of corresponding semiconductor channels, and each of the touch electrodes is electrically connected to at least one corresponding touch signal line ;as well as A plurality of pixel electrodes are separated from the touch electrodes and electrically connected to the drain electrodes respectively, wherein the capacitance electrodes overlap the pixel electrodes. The display device according to claim 1, wherein the first conductive layer further includes: a plurality of reflective electrodes overlapping the pixel electrodes. The display device according to claim 1, further comprising: a planar layer located on the second insulating layer, wherein opposite sides of the second insulating layer respectively contact the pixel electrodes and the capacitor electrodes, and the The touch electrodes are located on the planar layer. The display device as claimed in claim 1, further comprising: a common electrode overlapping the pixel electrodes; and an electrophoretic display medium layer located between the common electrode and the pixel electrodes. The display device according to claim 1, wherein each of the touch electrodes comprises: a mesh structure with a plurality of holes; and a plurality of shielding structures connected to the mesh structure, wherein each shielding structure overlaps a corresponding one A semiconductor channel, and each of the shielding structures is located in a corresponding hole of the network structure. The display device as claimed in claim 5, wherein each of the pixel electrodes is located in a corresponding hole of the mesh structures. The display device according to claim 1, wherein the touch electrodes are separated from each other, and each touch electrode surrounds a plurality of corresponding pixel electrodes. The display device as claimed in claim 1, further comprising: an oxide conductive layer formed on the light-shielding layer, wherein a material of the light-shielding layer includes metal. The display device according to claim 1, wherein the number of the scan lines is smaller than the number of the data lines.

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