TWI779162B - Photosensitive resin composition, cured film, laminated body, manufacturing method of cured film, manufacturing method of laminated body, semiconductor device - Google Patents

Photosensitive resin composition, cured film, laminated body, manufacturing method of cured film, manufacturing method of laminated body, semiconductor device Download PDF

Info

Publication number
TWI779162B
TWI779162B TW108102988A TW108102988A TWI779162B TW I779162 B TWI779162 B TW I779162B TW 108102988 A TW108102988 A TW 108102988A TW 108102988 A TW108102988 A TW 108102988A TW I779162 B TWI779162 B TW I779162B
Authority
TW
Taiwan
Prior art keywords
group
resin composition
photosensitive resin
formula
preferable
Prior art date
Application number
TW108102988A
Other languages
Chinese (zh)
Other versions
TW201937284A (en
Inventor
岩井悠
川端健志
吉田健太
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW201937284A publication Critical patent/TW201937284A/en
Application granted granted Critical
Publication of TWI779162B publication Critical patent/TWI779162B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12Unsaturated polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22Polybenzoxazoles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本發明提供一種包含聚合物前驅物及加熱時酸性度降低之化合物之感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法、半導體器件。The present invention provides a photosensitive resin composition comprising a polymer precursor and a compound whose acidity decreases when heated, a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, and a semiconductor device.

Description

感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法、半導體器件Photosensitive resin composition, cured film, laminate, method for producing cured film, method for producing laminate, semiconductor device

本發明係有關一種感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法、半導體器件。The present invention relates to a photosensitive resin composition, a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, and a semiconductor device.

聚醯亞胺樹脂、聚苯并㗁唑樹脂等環化並硬化之樹脂的耐熱性及絕緣性優異,因此適用於各種用途(例如,參閱非專利文獻1、2)。該用途並無特別限定,但若以實際安裝用半導體器件為例,則可舉出作為絕緣膜或密封材料的素材或該保護膜的利用。又,亦用作撓性基板的基膜或蓋層等。 上述聚醯亞胺樹脂等通常對溶劑的溶解性低。因此,經常使用以環化反應前的聚合物前驅物,具體而言,以聚醯亞胺前驅物或聚苯并㗁唑前驅物的狀態溶解於溶劑中之方法。藉此,能夠實現優異的操作性,且在製造如上述那樣的各產品時能夠以各種形態塗佈於基板等並加工。然後,加熱並使聚合物前驅物環化,從而能夠形成已硬化之產品。除了聚醯亞胺樹脂等所具有之高性能以外,從該等製造上的適應性優異之觀點考慮,越來越期待其產業上的應用發展。Cyclized and cured resins such as polyimide resins and polybenzoxazole resins are excellent in heat resistance and insulation, and are therefore suitable for various applications (for example, see Non-Patent Documents 1 and 2). The use is not particularly limited, but if a semiconductor device for actual mounting is taken as an example, it may be used as a material of an insulating film or a sealing material, or the use of the protective film. In addition, it is also used as a base film or a cover layer of a flexible substrate. The aforementioned polyimide resins and the like generally have low solubility in solvents. Therefore, a method in which a polymer precursor before cyclization reaction, specifically, a polyimide precursor or a polybenzoxazole precursor, is dissolved in a solvent is often used. Thereby, excellent workability can be achieved, and when manufacturing each product as mentioned above, it can apply|coat to a board|substrate etc. in various forms, and can be processed. Then, heating and cyclization of the polymer precursor enables the formation of the hardened product. In addition to the high performance possessed by polyimide resins and the like, their industrial application is increasingly expected from the viewpoint of their excellent manufacturing adaptability.

嘗試將聚醯亞胺作為層間絕緣膜的保護膜而適用(專利文獻1)。該技術中,適用含有聚醯亞胺前驅物和2,4,6-三甲基吡啶鎓對甲苯磺酸鹽之樹脂組成物。藉此,記載有能夠提供室溫下的黏度變化少之樹脂組成物。專利文獻2的技術中採用一種樹脂組成物,其含有聚醯亞胺前驅物、藉由光化射線照射而產生自由基之化合物、具有環氧乙烷基之特定化合物及溶劑。藉此,記載有能夠提供一種樹脂組成物,其具有良好的感光特性且能夠於低的最終硬化溫度下形成硬化膜,且硬化膜的重量減少溫度高。 [先前技術文獻] [專利文獻]Attempts have been made to apply polyimide as a protective film for an interlayer insulating film (Patent Document 1). In this technique, a resin composition containing a polyimide precursor and 2,4,6-trimethylpyridinium p-toluenesulfonate is used. Accordingly, it is described that a resin composition capable of providing a resin composition with little change in viscosity at room temperature is described. In the technology of Patent Document 2, a resin composition is used, which contains a polyimide precursor, a compound that generates free radicals when irradiated with actinic rays, a specific compound having an oxirane group, and a solvent. Thereby, it is described that it is possible to provide a resin composition which has favorable photosensitive properties, can form a cured film at a low final curing temperature, and has a high weight loss temperature of the cured film. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2015-108053號公報 [專利文獻2]日本特開2014-201695號公報 [非專利文獻][Patent Document 1] Japanese Patent Laid-Open No. 2015-108053 [Patent Document 2] Japanese Patent Laid-Open No. 2014-201695 [Non-patent literature]

[非專利文獻1]Science & technology Co.,Ltd.“聚醯亞胺的高功能化和應用技術”2008年4月 [非專利文獻2]柿本雅明/監修、CMC技術圖書館“聚醯亞胺材料的基礎和開發”2011年11月發行[Non-Patent Document 1] Science & technology Co., Ltd. "Highly functional polyimide and application technology" April 2008 [Non-Patent Document 2] Masaki Kakimoto/Supervisor, CMC Technical Library "Basics and Development of Polyimide Materials" Published in November 2011

聚合物前驅物能夠如上述那樣藉由加熱而硬化。但是,有時因該特性而保存時的硬化容易進行且樹脂的穩定性欠缺。另一方面,為了防止硬化而於組成物中採用抑制前驅物的環化之方法,則有時相反地硬化性變差且不滿足製膜時的要求特性。 於是,本發明的目的為提供一種能夠一邊維持充分的硬化性一邊實現良好的保存穩定性之感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體器件。The polymer precursor can be cured by heating as described above. However, due to this characteristic, hardening during storage may easily progress and the stability of the resin may be lacking. On the other hand, if the method of suppressing the cyclization of the precursor is used in the composition in order to prevent curing, the curability may conversely deteriorate and the properties required at the time of film formation may not be satisfied. Therefore, an object of the present invention is to provide a photosensitive resin composition, a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, and a semiconductor device capable of achieving good storage stability while maintaining sufficient curability. .

基於上述課題,本發明人進行了深入研究之結果,藉由對聚合物前驅物組合使用加熱時酸性度降低之化合物(以下,有時將其稱為“酸消失劑”)而保存穩定性變高,另一方面於硬化處理時未阻礙硬化性且能夠維持充分的性能。發現藉此可解決上述課題並完成了本發明。具體而言,藉由下述方法解決了上述課題。Based on the above-mentioned problems, the inventors of the present invention have conducted intensive studies. As a result, the storage stability of the polymer precursor has been improved by using a compound that reduces the acidity when heated (hereinafter, sometimes referred to as an "acid disappearing agent"). High, on the other hand, it does not inhibit the curability during the hardening treatment and can maintain sufficient performance. The inventors found that the above-mentioned problems can be solved by this, and completed the present invention. Specifically, the above-mentioned problems are solved by the following means.

<1>一種感光性樹脂組成物,其包括選自聚醯亞胺前驅物及聚苯并㗁唑前驅物中之聚合物前驅物及加熱時酸性度降低之化合物。 <2>如<1>所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物係由式A1~A3中的任一個表示之化合物; (X)m -LA -(Y)n ・・・・式A1 式中,X表示-COOH、-SO3 H或-PO3 H2 ,LA 表示m+n價連接基,Y表示-OH、-COOH或-NH(RN ),RN 為氫原子或有機基團,m表示1~4的整數,n表示1~4的整數; (X)m -LA -(Q)n ・・・・式A2 式中,X表示-COOH、-SO3 H或-PO3 H2 ,LA 表示m+n價連接基,Q表示藉由加熱而釋放鹼成分之基團; Z-(LC -COOH)nz ・・・・式A3 式中,Z表示nz價有機基團,LC 表示*1 -(C=O)C(Ra2 -*2 、-CH(Rb )-或-C(Rb2 -,Ra 表示氫原子、烷基、烯基、芳基或芳烷基,Rb 表示烷基、烯基、芳基或芳烷基,*1 表示Z側的鍵結位置,*2 表示COOH側的鍵結位置,nz為1~4的整數。 <3>如<2>所述之感光性樹脂組成物,其中 式A1中,X係-SO3 H。 <4>如<2>或<3>所述之感光性樹脂組成物,其中 式A1中,LA 係連接X與Q且原子數為3以上且6以下的連接基。 <5>如<2>~<4>中任一項所述之感光性樹脂組成物,其中 式A1中的m與n的關係為m≤n。 <6>如<1>~<5>中任一項所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物的含量於感光性樹脂組成物中係0.01質量%以上且10.0質量%以下。 <7>如<1>~<6>中任一項所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物係藉由於400℃下加熱而酸性度降低之化合物。 <8>如<1>~<7>中任一項所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物的pKa係-5.0以上且2.0以下。 <9>如<1>~<8>中任一項所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物於加熱前後的pKa差係8.0以上。 <10>如<1>~<9>中任一項所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物係藉由加熱而酸基發生分子內脫水縮合之化合物。 <11>如<1>~<10>中任一項所述之感光性樹脂組成物,其中 上述加熱時酸性度降低之化合物的分子量係80以上且1000以下。 <12>如<1>~<11>中任一項所述之感光性樹脂組成物,其還包含自由基聚合起始劑及自由基聚合性化合物。 <13>如<1>~<12>中任一項所述之感光性樹脂組成物,其中 上述聚合物前驅物包含聚醯亞胺前驅物。 <14>如<13>所述之感光性樹脂組成物,其中 上述聚醯亞胺前驅物具有由下述式(1)表示之構成單元; [化學式1]

Figure 02_image001
式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基團,R115 表示4價有機基團,R113 及R114 分別獨立地表示氫原子或1價有機基團。 <15>如<14>所述之感光性樹脂組成物,其中 上述式(1)中的R113 及R114 中的至少一個包含自由基聚合性基團。 <16>如<14>或<15>所述之感光性樹脂組成物,其中 上述式(1)中的R115 係包含芳香環之基團。 <17>如<14>~<16>中任一項所述之感光性樹脂組成物,其中 上述式(1)中的R111 由-Ar0 -L0 -Ar0 -表示; Ar0 分別獨立地表示芳香族基,L0 表示單鍵、可以經氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -、-NHCO-以及選自上述等的組合之基團。 <18>如<14>~<17>中任一項所述之感光性樹脂組成物,其中 上述式(1)中的R111 由下述式(51)或式(61)表示; [化學式2]
Figure 02_image003
式(51)中,R50 ~R57 分別獨立地表示氫原子、氟原子或1價有機基團,R50 ~R57 中的至少一個表示氟原子、甲基、氟甲基、二氟甲基或三氟甲基; [化學式3]
Figure 02_image005
式(61)中,R58 及R59 分別獨立地表示氟原子、氟甲基、二氟甲基或三氟甲基。 <19>如<1>~<18>中任一項所述之感光性樹脂組成物,其用於使用了包含90%以上的有機溶劑之顯影液之顯影。 <20>如<1>~<19>中任一項所述之感光性樹脂組成物,其用於再配線層用層間絕緣膜的形成。 <21>一種硬化膜,其使<1>~<20>中任一項所述之感光性樹脂組成物硬化而成。 <22>如<21>所述之硬化膜,其中 膜厚係1~30μm。 <23>一種積層體,其具有兩層以上的<21>或<22>所述之硬化膜。 <24>一種積層體,其具有3~7層<21>或<22>所述之硬化膜。 <25>如<23>或<24>所述之積層體,其中 於上述硬化膜之間具有金屬層。 <26>一種硬化膜的製造方法,其包括將<1>~<20>中任一項所述之感光性樹脂組成物適用於基板而形成膜之膜形成步驟。 <27>如<26>所述之硬化膜的製造方法,其具有對上述膜進行曝光之曝光步驟及對上述膜進行顯影之顯影步驟。 <28>如<27>所述之硬化膜的製造方法,其中 上述顯影中使用之顯影液包含90%以上的有機溶劑。 <29>如<26>~<28>中任一項所述之硬化膜的製造方法,其包括於80~450℃下對上述膜進行加熱之步驟。 <30>一種積層體的製造方法,其將<26>~<29>中任一項所述之硬化膜的製造方法進行複數次。 <31>一種半導體器件,其具有<21>或<22>所述之硬化膜或<23>~<25>中任一項所述之積層體。 [發明效果]<1> A photosensitive resin composition comprising a polymer precursor selected from polyimide precursors and polybenzoxazole precursors and a compound whose acidity decreases when heated. <2> The photosensitive resin composition as described in <1>, wherein the compound whose acidity decreases upon heating is a compound represented by any one of formulas A1 to A3; (X) m -L A -(Y) n ・・・・Formula A1 In the formula, X represents -COOH, -SO 3 H or -PO 3 H 2 , L A represents m+n valence linking group, Y represents -OH, -COOH or -NH (R N ) , R N is a hydrogen atom or an organic group, m represents an integer from 1 to 4, and n represents an integer from 1 to 4; (X) m -L A -(Q) n ・・・・Formula A2 In the formula, X represents -COOH, -SO 3 H or -PO 3 H 2 , L A represents the m+n valent linking group, Q represents the group that releases the alkali component by heating; Z-( LC -COOH) nz ・・・・ Formula A3 In the formula, Z represents an nz-valent organic group, L C represents * 1 -(C=O)C(R a ) 2 -* 2 , -CH(R b )- or -C(R b ) 2 - , R a represents a hydrogen atom, alkyl, alkenyl, aryl or aralkyl, R b represents an alkyl, alkenyl, aryl or aralkyl, * 1 represents the bonding position on the Z side, * 2 represents COOH Side bonding position, nz is an integer of 1-4. <3> The photosensitive resin composition as described in <2>, wherein in formula A1, X is -SO 3 H. <4> The photosensitive resin composition according to <2> or <3>, wherein in formula A1, L A is a linking group connecting X and Q and having 3 to 6 atoms. <5> The photosensitive resin composition according to any one of <2> to <4>, wherein the relationship between m and n in Formula A1 is m≦n. <6> The photosensitive resin composition according to any one of <1> to <5>, wherein the content of the compound that lowers the acidity upon heating is 0.01% by mass to 10.0% by mass in the photosensitive resin composition %the following. <7> The photosensitive resin composition according to any one of <1> to <6>, wherein the compound whose acidity decreases upon heating is a compound whose acidity decreases by heating at 400°C. <8> The photosensitive resin composition according to any one of <1> to <7>, wherein the pKa of the compound whose acidity decreases upon heating is -5.0 or more and 2.0 or less. <9> The photosensitive resin composition according to any one of <1> to <8>, wherein the pKa difference between before and after heating of the compound whose acidity decreases upon heating is 8.0 or more. <10> The photosensitive resin composition according to any one of <1> to <9>, wherein the compound whose acidity decreases upon heating is a compound whose acid group undergoes intramolecular dehydration condensation by heating. <11> The photosensitive resin composition according to any one of <1> to <10>, wherein the molecular weight of the compound that lowers the acidity upon heating is 80 or more and 1000 or less. <12> The photosensitive resin composition according to any one of <1> to <11>, further comprising a radical polymerization initiator and a radical polymerizable compound. <13> The photosensitive resin composition according to any one of <1> to <12>, wherein the polymer precursor includes a polyimide precursor. <14> The photosensitive resin composition as described in <13>, wherein the polyimide precursor has a structural unit represented by the following formula (1); [Chemical formula 1]
Figure 02_image001
In formula (1), A 1 and A 2 independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, R 113 and R 114 independently represent a hydrogen atom or 1-valent organic group. <15> The photosensitive resin composition according to <14>, wherein at least one of R 113 and R 114 in the formula (1) includes a radical polymerizable group. <16> The photosensitive resin composition as described in <14> or <15>, wherein R 115 in the formula (1) is a group containing an aromatic ring. <17> The photosensitive resin composition according to any one of <14> to <16>, wherein R 111 in the above formula (1) is represented by -Ar 0 -L 0 -Ar 0 -; Ar 0 respectively Independently represents an aromatic group, L 0 represents a single bond, an aliphatic hydrocarbon group with 1 to 10 carbons that may be substituted by a fluorine atom, -O-, -C(=O)-, -S-, -S(=O ) 2 -, -NHCO-, and a group selected from combinations of the above and the like. <18> The photosensitive resin composition according to any one of <14> to <17>, wherein R 111 in the above formula (1) is represented by the following formula (51) or formula (61); 2]
Figure 02_image003
In formula (51), R 50 to R 57 independently represent a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 50 to R 57 represents a fluorine atom, methyl, fluoromethyl, difluoromethyl base or trifluoromethyl; [chemical formula 3]
Figure 02_image005
In formula (61), R 58 and R 59 each independently represent a fluorine atom, a fluoromethyl group, a difluoromethyl group or a trifluoromethyl group. <19> The photosensitive resin composition according to any one of <1> to <18>, which is used for image development using a developer containing 90% or more of an organic solvent. <20> The photosensitive resin composition as described in any one of <1>-<19> used for formation of the interlayer insulating film for rewiring layers. <21> A cured film obtained by curing the photosensitive resin composition according to any one of <1> to <20>. <22> The cured film according to <21>, wherein the film thickness is 1 to 30 μm. <23> A laminate having two or more layers of the cured film described in <21> or <22>. <24> A laminate having 3 to 7 layers of the cured film described in <21> or <22>. <25> The laminate according to <23> or <24>, which has a metal layer between the cured films. <26> A method for producing a cured film, including a film forming step of applying the photosensitive resin composition according to any one of <1> to <20> to a substrate to form a film. <27> The manufacturing method of the cured film as described in <26> which has the exposure process of exposing the said film, and the image development process of developing the said film. <28> The method for producing a cured film according to <27>, wherein the developer used for the image development contains 90% or more of an organic solvent. <29> The manufacturing method of the cured film any one of <26>-<28> which includes the process of heating the said film at 80-450 degreeC. <30> A method for producing a laminate comprising performing the method for producing a cured film according to any one of <26> to <29> a plurality of times. <31> A semiconductor device comprising the cured film described in <21> or <22> or the laminate described in any one of <23> to <25>. [Invention effect]

藉由本發明,能夠提供一種能夠一邊維持充分的硬化性一邊實現良好的保存穩定性之感光性樹脂組成物、感光性樹脂、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體器件。According to the present invention, it is possible to provide a photosensitive resin composition, a photosensitive resin, a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, and Semiconductor device.

以下,對本發明的內容進行說明。此外,本說明書中,“~”是指將記載於其前後之數值作為下限值及上限值而包含之範圍的含義而使用。Hereinafter, the contents of the present invention will be described. In addition, in this specification, "-" is used for the meaning of the range which uses the numerical value described before and after that as a lower limit and an upper limit.

以下所記載之本發明中的構成要件的說明有時基於本發明的代表性實施方式而進行,但本發明並不限定於該等實施方式。 關於本說明書中的基團(原子團)的標記,未記述經取代及未經取代之標記係同時包含不具有取代基者和具有取代基者。例如,“烷基”不僅包含不具有取代基之烷基(未經取代的烷基),還包含具有取代基之烷基(取代烷基)。 本說明書中“曝光”只要無特別限定,除了利用光的曝光以外,利用電子束、離子束等粒子束之描繪亦包含於曝光中。又,作為使用於曝光之光,通常可舉出以水銀燈的明線光譜、準分子雷射為代表之遠紫外線、極紫外線(EUV光)、X射線、電子束等活性光線或放射線。 本說明書中,“(甲基)丙烯酸酯”表示“丙烯酸酯”及“甲基丙烯酸酯”這兩者或其中任一個,“(甲基)丙烯酸”表示“丙烯酸”及“甲基丙烯酸”這兩者或其中任一個,“(甲基)丙烯醯基”表示“丙烯醯基”及“甲基丙烯醯基”這兩者或其中任一個。 本說明書中,“步驟”這一術語,不僅是獨立的步驟,而且即使於無法與其他步驟明確區分之情況下,若可實現對該步驟所期待之作用,則亦包含於本術語中。 本說明書中,固體成分係相對於組成物的總質量中除了溶劑以外的成分的質量百分率。又,只要沒有特別記載,則固體成分濃度是指25℃下的濃度。 本說明書中,只要沒有特別記載,則重量平均分子量(Mw)及數平均分子量(Mn)基於凝膠滲透層析法(GPC測定),並作為苯乙烯換算值而定義。本說明書中,重量平均分子量(Mw)及數平均分子量(Mn)例如能夠利用HLC-8220(TOSOH CORPORA TION製),並作為柱而使用保護柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000及TSKgel Super HZ2000(TOSOH CORPORA TION製)而求出。只要沒有特別記載,則將洗提液設為利用THF(四氫呋喃)測定者。又,只要沒有特別記載,則將檢測設為使用UV線(紫外線)的波長254nm檢測器者。The description of the constituent requirements in the present invention described below may be based on representative embodiments of the present invention, but the present invention is not limited to these embodiments. Regarding the notation of a group (atomic group) in this specification, the notation of substitution and non-substitution includes both those without a substituent and those with a substituent. For example, "alkyl" includes not only an unsubstituted alkyl group (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). Unless otherwise specified, "exposure" in this specification includes not only exposure by light but also drawing by particle beams such as electron beams and ion beams. In addition, as the light used for exposure, active rays or radiation such as extreme ultraviolet rays, extreme ultraviolet rays (EUV light), X-rays, and electron beams represented by bright line spectra of mercury lamps and excimer lasers are generally mentioned. In this specification, "(meth)acrylate" means both or either of "acrylate" and "methacrylate", and "(meth)acrylic acid" means "acrylic acid" or "methacrylic acid". Both or any of them, "(meth)acryl" means both or either of "acryl" and "methacryl". In this specification, the term "step" is not only an independent step, but also includes in this term as long as the expected action of the step can be achieved even when it cannot be clearly distinguished from other steps. In the present specification, the solid content refers to the mass percentage of components other than the solvent relative to the total mass of the composition. In addition, unless otherwise specified, the solid content concentration refers to the concentration at 25°C. In this specification, unless otherwise specified, weight average molecular weight (Mw) and number average molecular weight (Mn) are defined as styrene-equivalent values based on gel permeation chromatography (GPC measurement). In this specification, for weight average molecular weight (Mw) and number average molecular weight (Mn), for example, HLC - 8220 (manufactured by TOSOH CORPORATION) can be used, and guard column HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION) were used to obtain them. Unless otherwise specified, the eluent was measured with THF (tetrahydrofuran). In addition, unless otherwise specified, detection was performed using a detector with a wavelength of 254 nm of UV rays (ultraviolet rays).

本發明的感光性樹脂組成物(以下,有時簡稱為“本發明的組成物”或“本發明的樹脂組成物”)包含聚合物前驅物及加熱時酸性度降低之化合物(以下,有時稱為“酸消失劑”)。藉此,如上所述,能夠一邊維持充分的硬化性一邊實現良好的保存穩定性。獲得該種特別效果之理由雖不明確,但能夠如下推定。亦即,認為酸消失劑於室溫下表現為酸性化合物,且可阻礙聚合物前驅物的環化反應。另一方面,若酸消失劑加熱至規定溫度時於分子內進行反應等,藉此酸基會消失而不會阻礙閉環反應。因此,加熱硬化時不會阻礙環化便能夠維持樹脂的充分的硬化性。藉由該種機理,推測能夠一邊充分維持硬化時的硬化性,一邊實現保存時的良好的穩定性。以下,針對本發明的感光性樹脂組成物,以其成分組成為中心對較佳的實施形態進行說明。The photosensitive resin composition of the present invention (hereinafter, sometimes simply referred to as "the composition of the present invention" or "resin composition of the present invention") includes a polymer precursor and a compound that reduces acidity when heated (hereinafter, sometimes known as "acid vanishers"). Thereby, as described above, good storage stability can be realized while maintaining sufficient curability. Although the reason for obtaining such a special effect is not clear, it can be inferred as follows. That is, it is considered that the acid disappearing agent behaves as an acidic compound at room temperature, and may hinder the cyclization reaction of the polymer precursor. On the other hand, when the acid disappearing agent is heated to a predetermined temperature, a reaction occurs in the molecule, whereby the acid group disappears without hindering the ring closure reaction. Therefore, sufficient curability of the resin can be maintained without hindering cyclization during heat curing. By such a mechanism, it is presumed that good stability during storage can be achieved while sufficiently maintaining the curability during curing. Hereinafter, regarding the photosensitive resin composition of the present invention, preferred embodiments will be described centering on its component composition.

<聚合物前驅物> 本發明的感光性樹脂組成物包含選自聚醯亞胺前驅物及聚苯并㗁唑前驅物中之聚合物前驅物。作為聚合物前驅物,聚醯亞胺前驅物為更佳,包含由下述式(1)表示之構成單元之聚醯亞胺前驅物為進一步較佳。<Polymer precursor> The photosensitive resin composition of the present invention comprises a polymer precursor selected from polyimide precursors and polybenzoxazole precursors. As a polymer precursor, a polyimide precursor is more preferable, and the polyimide precursor containing the structural unit represented by following formula (1) is still more preferable.

<<聚醯亞胺前驅物>> 作為聚醯亞胺前驅物,包含由下述式(1)表示之構成單元為較佳。藉由設為該種結構,可得到膜強度更優異之組成物。 [化學式4]

Figure 02_image007
式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基團,R115 表示4價有機基團,R113 及R114 分別獨立地表示氫原子或1價有機基團。<<Polyimide Precursor>> It is preferable that the polyimide precursor contains a structural unit represented by the following formula (1). By setting it as such a structure, the composition more excellent in film strength can be obtained. [chemical formula 4]
Figure 02_image007
In formula (1), A 1 and A 2 independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, R 113 and R 114 independently represent a hydrogen atom or 1-valent organic group.

A1 及A2 分別獨立地係氧原子或NH,氧原子為較佳。A 1 and A 2 are each independently an oxygen atom or NH, preferably an oxygen atom.

<<<R111 >>> R111 表示2價有機基團。作為2價有機基團,例示直鏈或支鏈的脂肪族基、環狀脂肪族基及芳香族基、雜芳香族基或包含該等組合之基團,碳數2~20的直鏈脂肪族基、碳數3~20的支鏈脂肪族基、碳數3~20的環狀脂肪族基、碳數6~20的芳香族基或包括該等的組合之基團為較佳,碳數6~20的芳香族基為更佳。 R111 由二胺衍生為較佳。作為在聚醯亞胺前驅物的製造中所使用之二胺,可舉出直鏈或支鏈脂肪族、環狀脂肪族或芳香族二胺等。二胺可以僅使用一種,亦可以使用兩種以上。 具體而言,二胺包含碳數2~20的直鏈脂肪族基、碳數3~20的支鏈或環狀脂肪族基、碳數6~20的芳香族基或包含該等組合之基團為較佳,包含碳數6~20的芳香族基之二胺為更佳。作為芳香族基的例,可舉出下述芳香族基。<<<R 111 >>> R 111 represents a divalent organic group. Examples of divalent organic groups include straight-chain or branched aliphatic groups, cyclic aliphatic groups, aromatic groups, heteroaromatic groups, or combinations thereof, straight-chain aliphatic groups having 2 to 20 carbon atoms An aliphatic group, a branched aliphatic group with 3 to 20 carbons, a cyclic aliphatic group with 3 to 20 carbons, an aromatic group with 6 to 20 carbons, or a combination of these groups are preferred. The number of aromatic groups of 6-20 is more preferable. R 111 is preferably derived from a diamine. Examples of the diamine used in the production of the polyimide precursor include linear or branched aliphatic, cyclic aliphatic, or aromatic diamines. One kind of diamine may be used, or two or more kinds may be used. Specifically, the diamine contains a straight-chain aliphatic group with 2 to 20 carbons, a branched or cyclic aliphatic group with 3 to 20 carbons, an aromatic group with 6 to 20 carbons, or a combination thereof Groups are preferred, and diamines containing aromatic groups with 6 to 20 carbon atoms are more preferred. Examples of the aromatic group include the following aromatic groups.

[化學式5]

Figure 02_image009
[chemical formula 5]
Figure 02_image009

式中,A係單鍵或選自可以經氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -、-NHCO-以及該等的組合中之基團為較佳,單鍵或選自可以經氟原子取代之碳數1~3的伸烷基、-O-、-C(=O)-、-S-及-SO2 -中之基團為更佳,選自包括-CH2 -、-O-、-S-、-SO2 -、-C(CF32 -及-C(CH32 -之組中之2價基團為進一步較佳。In the formula, A is a single bond or selected from aliphatic hydrocarbon groups with 1 to 10 carbons that may be substituted by fluorine atoms, -O-, -C(=O)-, -S-, -S(=O) 2 - , -NHCO- and the groups in the combination of these are preferred, single bond or selected from the group of alkylene with 1 to 3 carbons that may be substituted by fluorine atoms, -O-, -C(=O)-, The groups in -S- and -SO 2 - are more preferably selected from the group including -CH 2 -, -O-, -S-, -SO 2 -, -C(CF 3 ) 2 - and -C(CH 3 ) The divalent group in the 2 - group is further preferred.

作為二胺,具體而言可舉出選自1,2-二胺基乙烷、1,2-二胺基丙烷、1,3-二胺基丙烷、1,4-二胺基丁烷及1,6-二胺基己烷;1,2-二胺基環戊烷或1,3-二胺基環戊烷、1,2-二胺基環己烷、1,3-二胺基環己烷或1,4-二胺基環己烷、1,2-雙(胺基甲基)環己烷、1,3-雙(胺基甲基)環己烷或1,4-雙(胺基甲基)環己烷、雙-(4-胺基環己基)甲烷、雙-(3-胺基環己基)甲烷、4,4’-二胺基-3,3’-二甲基環己基甲烷及異佛爾酮二胺;間苯二胺及對苯二胺、二胺基甲苯、4,4’-二胺基聯苯及3,3’-二胺基聯苯、4,4’-二胺基二苯醚、3,3’-二胺基二苯醚、4,4’-二胺基二苯基甲烷及3,3’-二胺基二苯基甲烷、4,4’-二胺基二苯基碸及3,3-二胺基二苯基碸、4,4’-二胺基二苯硫醚及3,3’-二胺基二苯硫醚、4,4’-二胺基二苯甲酮及3,3’-二胺基二苯甲酮、3,3’-二甲基-4,4’-二胺基聯苯、2,2’-二甲基-4,4’-二胺基聯苯(4,4’-二胺基-2,2-二甲基聯苯)、3,3’-二甲氧基-4,4’-二胺基聯苯、2,2-雙(4-胺基苯基)丙烷、2,2-雙(4-胺基苯基)六氟丙烷、2,2-雙(3-羥基-4-胺基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(3-胺基-4-羥基苯基)碸、雙(4-胺基-3-羥基苯基)碸、4,4’-二胺基對聯三苯、4,4’-雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(2-胺基苯氧基)苯基]碸、1,4-雙(4-胺基苯氧基)苯、9,10-雙(4-胺基苯基)蒽、3,3’-二甲基-4,4’-二胺基二苯基碸、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,3-雙(4-胺基苯基)苯、3,3’-二乙基-4,4’-二胺基二苯基甲烷、3,3’-二甲基-4,4’-二胺基二苯基甲烷、4,4’-二胺基八氟聯苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、9,9-雙(4-胺基苯基)-10-氫蒽、3,3’,4,4’-四胺基聯苯、3,3’,4,4’-四胺基二苯醚、1,4-二胺基蒽醌、1,5-二胺基蒽醌、3,3-二羥基-4,4’-二胺基聯苯、9,9’-雙(4-胺基苯基)茀、4,4’-二甲基-3,3’-二胺基二苯基碸、3,3’,5,5’-四甲基-4,4’-二胺基二苯基甲烷、2-(3’,5’-二胺基苯甲醯氧基)甲基丙烯酸乙酯)、2,4-二胺基枯烯及2,5-二胺基枯烯、2,5-二甲基-對苯二胺、乙醯胍胺、2,3,5,6-四甲基-對苯二胺、2,4,6-三甲基-間苯二胺、雙(3-胺基丙基)四甲基二矽氧烷、2,7-二胺基茀、2,5-二胺基吡啶、1,2-雙(4-胺基苯基)乙烷、二胺基苯甲醯苯胺、二胺基苯甲酸的酯、1,5-二胺基萘、二胺基三氟甲苯、1,3-雙(4-胺基苯基)六氟丙烷、1,4-雙(4-胺基苯基)八氟丁烷、1,5-雙(4-胺基苯基)十氟戊烷、1,7-雙(4-胺基苯基)十四氟庚烷、2,2-雙[4-(3-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(2-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-二甲基苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-雙(三氟甲基)苯基]六氟丙烷、對雙(4-胺基-2-三氟甲基苯氧基)苯、4,4’-雙(4-胺基-2-三氟甲基苯氧基)聯苯、4,4’-雙(4-胺基-3-三氟甲基苯氧基)聯苯、4,4’-雙(4-胺基-2-三氟甲基苯氧基)二苯基碸、4,4’-雙(3-胺基-5-三氟甲基苯氧基)二苯基碸、2,2-雙[4-(4-胺基-3-三氟甲基苯氧基)苯基]六氟丙烷、3,3’,5,5’-四甲基-4,4’-二胺基聯苯、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯、2,2’,5,5’,6,6’-六氟聯甲苯胺及4,4’-二胺基四聯苯中之至少一種二胺。Specific examples of diamines include those selected from 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, and 1,6-diaminocyclohexane; 1,2-diaminocyclopentane or 1,3-diaminocyclopentane, 1,2-diaminocyclohexane, 1,3-diaminocyclopentane Cyclohexane or 1,4-diaminocyclohexane, 1,2-bis(aminomethyl)cyclohexane, 1,3-bis(aminomethyl)cyclohexane or 1,4-bis (Aminomethyl)cyclohexane, bis-(4-aminocyclohexyl)methane, bis-(3-aminocyclohexyl)methane, 4,4'-diamino-3,3'-dimethyl Cyclohexylmethane and isophorone diamine; m-phenylenediamine and p-phenylenediamine, diaminotoluene, 4,4'-diaminobiphenyl and 3,3'-diaminobiphenyl, 4 ,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane and 3,3'-diaminodiphenylmethane, 4 ,4'-diaminodiphenylsulfide and 3,3-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide and 3,3'-diaminodiphenylsulfide, 4,4'-diaminobenzophenone and 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2' -Dimethyl-4,4'-diaminobiphenyl (4,4'-diamino-2,2-dimethylbiphenyl), 3,3'-dimethoxy-4,4' -Diaminobiphenyl, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(3-hydroxy-4 -aminophenyl)propane, 2,2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2, 2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)pyridine, bis(4-amino-3-hydroxyphenyl)pyridine, 4 ,4'-diamino-terphenyl, 4,4'-bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]pyridine, bis[4 -(3-aminophenoxy)phenyl]pyridine, bis[4-(2-aminophenoxy)phenyl]pyridine, 1,4-bis(4-aminophenoxy)benzene, 9 ,10-bis(4-aminophenyl)anthracene, 3,3'-dimethyl-4,4'-diaminodiphenyl anthracene, 1,3-bis(4-aminophenoxy) Benzene, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenyl)benzene, 3,3'-diethyl-4,4'-diamino Diphenylmethane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminooctafluorobiphenyl, 2,2-bis[4-(4 -aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 9,9-bis(4-aminophenyl)- 10-hydroanthracene, 3,3',4,4'-tetraaminobiphenyl, 3,3',4,4'-tetraaminodiphenyl ether, 1,4-diaminoanthraquinone, 1, 5-Diaminoanthraquinone, 3,3-dihydroxy-4, 4'-Diaminobiphenyl, 9,9'-bis(4-aminophenyl) terpene, 4,4'-dimethyl-3,3'-diaminodiphenylphenone, 3,3 ',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2-(3',5'-diaminobenzoyloxy)ethyl methacrylate), 2 ,4-Diaminocumene and 2,5-Diaminocumene, 2,5-Dimethyl-p-phenylenediamine, Acetoguanamine, 2,3,5,6-Tetramethyl-p Phenylenediamine, 2,4,6-trimethyl-m-phenylenediamine, bis(3-aminopropyl)tetramethyldisiloxane, 2,7-diamino terpene, 2,5-bis Aminopyridine, 1,2-bis(4-aminophenyl)ethane, diaminobenzanilide, esters of diaminobenzoic acid, 1,5-diaminonaphthalene, diaminotrifluoro Toluene, 1,3-bis(4-aminophenyl)hexafluoropropane, 1,4-bis(4-aminophenyl)octafluorobutane, 1,5-bis(4-aminophenyl) Decafluoropentane, 1,7-bis(4-aminophenyl)tetrafluoroheptane, 2,2-bis[4-(3-aminophenoxy)phenyl]hexafluoropropane, 2, 2-bis[4-(2-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-dimethylphenyl] Hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-bis(trifluoromethyl)phenyl]hexafluoropropane, p-bis(4-aminophenoxy)-3,5-bis(trifluoromethyl)phenyl] Trifluoromethylphenoxy)benzene, 4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl, 4,4'-bis(4-amino-3-tri Fluoromethylphenoxy)biphenyl, 4,4'-bis(4-amino-2-trifluoromethylphenoxy)diphenylene, 4,4'-bis(3-amino-5 -trifluoromethylphenoxy)diphenylsulfone, 2,2-bis[4-(4-amino-3-trifluoromethylphenoxy)phenyl]hexafluoropropane, 3,3', 5,5'-tetramethyl-4,4'-diaminobiphenyl, 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl, 2,2',5 , at least one diamine selected from 5',6,6'-hexafluorobenzidine and 4,4'-diaminoquaterphenyl.

又,以下所示之二胺(DA-1)~(DA-18)亦為較佳。Moreover, diamine (DA-1)-(DA-18) shown below is also preferable.

[化學式6]

Figure 02_image011
[chemical formula 6]
Figure 02_image011

又,作為較佳的例,亦可舉出於主鏈具有至少兩個以上的伸烷基二醇單元之二胺。較佳為於一分子中組合包含兩個以上的乙二醇鏈、丙二醇鏈中的任一個或兩者之二胺,更佳為不包含芳香環之二胺。作為具體例,可舉出JEFFAMINE(註冊商標)KH-511、JEFFAMINE(註冊商標)ED-600、JEFFAMINE(註冊商標)ED-900、JEFFAMINE(註冊商標)ED-2003、JEFFAMINE(註冊商標)EDR-148、JEFFAMINE(註冊商標)EDR-176、D-200、D-400、D-2000、D-4000(以上為產品名,HUNTSMAN公司製)、1-(2-(2-(2-胺基丙氧基)乙氧基)丙氧基)丙烷-2-胺、1-(1-(1-(2-胺基丙氧基)丙烷-2-基)氧基)丙烷-2-胺等,但並不限定於這些。 以下示出JEFFAMINE(註冊商標)KH-511、JEFFAMINE(註冊商標)ED-600、JEFFAMINE(註冊商標)ED-900、JEFFAMINE(註冊商標)ED-2003、JEFFAMINE(註冊商標)EDR-148、JEFFAMINE(註冊商標)EDR-176的結構。Moreover, the diamine which has at least 2 or more alkylene glycol units in a main chain can also be mentioned as a preferable example. It is preferable to combine diamine containing any one or both of two or more ethylene glycol chains and propylene glycol chains in one molecule, more preferably a diamine not containing an aromatic ring. Specific examples include JEFFAMINE (registered trademark) KH-511, JEFFAMINE (registered trademark) ED-600, JEFFAMINE (registered trademark) ED-900, JEFFAMINE (registered trademark) ED-2003, JEFFAMINE (registered trademark) EDR- 148. JEFFAMINE (registered trademark) EDR-176, D-200, D-400, D-2000, D-4000 (the above are product names, manufactured by HUNTSMAN), 1-(2-(2-(2-amino Propoxy)ethoxy)propoxy)propane-2-amine, 1-(1-(1-(2-aminopropoxy)propan-2-yl)oxy)propane-2-amine, etc. , but not limited to these. JEFFAMINE (registered trademark) KH-511, JEFFAMINE (registered trademark) ED-600, JEFFAMINE (registered trademark) ED-900, JEFFAMINE (registered trademark) ED-2003, JEFFAMINE (registered trademark) EDR-148, JEFFAMINE ( registered trademark) structure of EDR-176.

[化學式7]

Figure 02_image013
[chemical formula 7]
Figure 02_image013

上述中,x、y、z為平均值。In the above, x, y, and z are average values.

從所得到之硬化膜的柔軟性的觀點考慮,R111 由-Ar0 -L0 -Ar0 -表示為較佳。其中,Ar0 分別獨立地為芳香族烴基(碳數6~22為較佳,6~18為更佳,6~10為特佳),伸苯基為較佳。L0 表示單鍵、可以經氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -、-NHCO-以及選自該等的組合之基團。較佳的範圍的定義與上述A相同。From the viewpoint of the flexibility of the obtained cured film, R 111 is preferably represented by -Ar 0 -L 0 -Ar 0 -. Among them, Ar 0 are each independently an aromatic hydrocarbon group (preferably having 6-22 carbon atoms, more preferably having 6-18 carbon atoms, and particularly preferably having 6-10 carbon atoms), and preferably a phenylene group. L 0 represents a single bond, an aliphatic hydrocarbon group with 1 to 10 carbons that may be substituted by a fluorine atom, -O-, -C(=O)-, -S-, -S(=O) 2 -, -NHCO- and groups selected from combinations thereof. The definition of the preferable range is the same as that of A above.

從i射線透過率的觀點考慮,R111 係由下述式(51)或式(61)表示之2價有機基團為較佳。尤其,從i射線透過率、易獲得的觀點考慮,由式(61)表示之2價有機基團為更佳。 [化學式8]

Figure 02_image015
R50 ~R57 分別獨立地為氫原子、氟原子或1價有機基團,R50 ~R57 中的至少一個為氟原子、甲基、氟甲基、二氟甲基或三氟甲基。 作為R50 ~R57 的1價有機基團時,可舉出碳數1~10(較佳為碳數1~6)的未經取代的烷基、碳數1~10(較佳為碳數1~6)的氟化烷基等。 [化學式9]
Figure 02_image017
R58 及R59 分別獨立地為氟原子、氟甲基、二氟甲基或三氟甲基。 作為賦予式(51)或(61)的結構之二胺化合物,可舉出二甲基-4,4’-二胺基聯苯、2,2’-雙(三氟甲基)-4,4’-二胺基聯苯、2,2’-雙(氟)-4,4’-二胺基聯苯、4,4’-二胺基八氟聯苯等。可以使用該等中的一種,亦可以組合使用兩種以上From the viewpoint of i-ray transmittance, R 111 is preferably a divalent organic group represented by the following formula (51) or formula (61). In particular, a divalent organic group represented by formula (61) is more preferable from the viewpoint of i-ray transmittance and availability. [chemical formula 8]
Figure 02_image015
R 50 to R 57 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 50 to R 57 is a fluorine atom, methyl, fluoromethyl, difluoromethyl or trifluoromethyl . As the monovalent organic group of R 50 to R 57 , unsubstituted alkyl groups having 1 to 10 carbons (preferably 1 to 6 carbons), unsubstituted alkyl groups having 1 to 10 carbons (preferably carbon 1 to 6) fluorinated alkyl groups, etc. [chemical formula 9]
Figure 02_image017
R 58 and R 59 are each independently a fluorine atom, a fluoromethyl group, a difluoromethyl group or a trifluoromethyl group. Examples of the diamine compound giving the structure of formula (51) or (61) include dimethyl-4,4'-diaminobiphenyl, 2,2'-bis(trifluoromethyl)-4, 4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc. One of these can be used, or two or more can be used in combination

<<<R115 >>> 式(1)中的R115 表示4價有機基團。作為4價有機基團,包含芳香環之4價有機基團為較佳,由下述式(5)或式(6)表示之基團為更佳。 [化學式10]

Figure 02_image019
R112 的定義與A相同,較佳範圍亦相同。<<<R 115 >>> R 115 in the formula (1) represents a tetravalent organic group. As the tetravalent organic group, a tetravalent organic group including an aromatic ring is preferable, and a group represented by the following formula (5) or formula (6) is more preferable. [chemical formula 10]
Figure 02_image019
The definition of R112 is the same as that of A, and the preferred range is also the same.

關於由式(1)中的R115 表示之4價有機基團,具體而言,可舉出從四羧酸二酐去除酸二酐基之後殘存之四羧酸殘基等。四羧酸二酐可以僅使用一種,亦可以使用兩種以上。四羧酸二酐係由下述式(7)表示之化合物為較佳。 [化學式11]

Figure 02_image021
R115 表示4價有機基團。R115 的定義與式(1)的R115 相同。Specific examples of the tetravalent organic group represented by R 115 in the formula (1) include a tetracarboxylic acid residue remaining after removing the acid dianhydride group from the tetracarboxylic dianhydride. Tetracarboxylic dianhydride may be used only by 1 type, and may use 2 or more types. The tetracarboxylic dianhydride is preferably a compound represented by the following formula (7). [chemical formula 11]
Figure 02_image021
R 115 represents a tetravalent organic group. The definition of R 115 is the same as that of R 115 in the formula (1).

作為四羧酸二酐的具體例,可例示選自均苯四甲酸、均苯四甲酸二酐(PMDA)、3,3’,4,4’-聯苯四羧酸二酐、3,3’,4,4’-二苯硫醚四羧酸二酐、3,3’,4,4’-二苯基碸四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-二苯基甲烷四羧酸二酐、2,2’,3,3’-二苯基甲烷四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、2,3,3’,4’-二苯甲酮四羧酸二酐、4,4’-氧代二鄰苯二甲酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,7-萘四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、1,3-二苯基六氟丙烷-3,3,4,4-四羧酸二酐、1,4,5,6-萘四羧酸二酐、2,2’,3,3’-二苯基四羧酸二酐、3,4,9,10-苝四羧酸二酐、1,2,4,5-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、1,8,9,10-菲四羧酸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,3,4-苯四羧酸二酐及該等的碳數1~6的烷基衍生物及碳數1~6的烷氧基衍生物中之至少一種。Specific examples of tetracarboxylic dianhydride include pyromellitic acid, pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3 ',4,4'-diphenylsulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenylsulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenylmethylbenzene Ketone tetracarboxylic dianhydride, 3,3',4,4'-diphenylmethane tetracarboxylic dianhydride, 2,2',3,3'-diphenylmethane tetracarboxylic dianhydride, 2,3 ,3',4'-Biphenyltetracarboxylic dianhydride, 2,3,3',4'-benzophenone tetracarboxylic dianhydride, 4,4'-oxodiphthalic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,4,5,7-naphthalene tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2 ,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane- 3,3,4,4-tetracarboxylic dianhydride, 1,4,5,6-naphthalene tetracarboxylic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 3, 4,9,10-perylenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,8,9,10 -Phenanthrene tetracarboxylic dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethanedianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethanedianhydride, 1, At least one of 2,3,4-benzenetetracarboxylic dianhydride and these alkyl derivatives having 1 to 6 carbons and alkoxy derivatives having 1 to 6 carbons.

又,作為較佳例還可舉出下述中所示出之四羧酸二酐(DAA-1)~(DAA-5)。 [化學式12]

Figure 02_image023
Moreover, tetracarboxylic dianhydride (DAA-1) - (DAA-5) shown below can also be mentioned as a preferable example. [chemical formula 12]
Figure 02_image023

<<<R113 及R114 >>> 式(1)中,R113 及R114 分別獨立地表示氫原子或1價有機基團。R113 及R114 中的至少一個係含有自由基聚合性基團之重複單元為較佳,兩者均含有自由基聚合性基團為更佳。作為自由基聚合性基團,為藉由自由基的作用,能夠進行交聯反應之基團,且作為較佳的例,可舉出具有乙烯性不飽和鍵之基團。 作為具有乙烯性不飽和鍵之基團,可舉出乙烯基、烯丙基、(甲基)丙烯醯基、由下述式(III)表示之基團等。<<< R 113 and R 114 >>> In formula (1), R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group. It is preferable that at least one of R 113 and R 114 is a repeating unit containing a radical polymerizable group, and it is more preferable that both of them contain a radical polymerizable group. The radical polymerizable group is a group capable of undergoing a crosslinking reaction by the action of a radical, and a preferable example includes a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, a (meth)acryl group, a group represented by the following formula (III), and the like.

[化學式13]

Figure 02_image025
[chemical formula 13]
Figure 02_image025

式(III)中,R200 表示氫原子或甲基,甲基為更佳。 式(III)中,R201 表示碳數2~12的伸烷基、-CH2 CH(OH)CH2 -或碳數4~30的(聚)氧化伸烷基(作為伸烷基,碳數1~12為較佳,1~6為更佳,1~3為特佳;重複數係1~12為較佳,1~6為更佳,1~3為特佳)。此外,(聚)氧化伸烷基是指氧化伸烷基或聚氧化伸烷基。 較佳的R201 的例中,可舉出伸乙基、伸丙基、三亞甲基、四亞甲基、1,2-丁二基、1,3-丁二基、五亞甲基、六亞甲基、八亞甲基、十二亞甲基、-CH2 CH(OH)CH2 -,伸乙基、伸丙基、三亞甲基、-CH2 CH(OH)CH2 -為更佳。 特佳為R200 係甲基,R201 係伸乙基。In formula (III), R 200 represents a hydrogen atom or a methyl group, more preferably a methyl group. In formula (III), R 201 represents an alkylene group with 2 to 12 carbons, -CH 2 CH(OH)CH 2 - or a (poly)oxyalkylene group with 4 to 30 carbons (as an alkylene group, carbon The number 1 to 12 is preferred, 1 to 6 is more preferred, and 1 to 3 is particularly preferred; the repeated number is 1 to 12 is preferred, 1 to 6 is more preferred, and 1 to 3 is especially preferred). In addition, (poly)oxyalkylene refers to oxyalkylene or polyoxyalkylene. Among preferred R201 examples, ethylidene, propylidene, trimethylene, tetramethylene, 1,2-butanediyl, 1,3-butanediyl, pentamethylene, Hexamethylene, octamethylene, dodecamethylene, -CH 2 CH(OH)CH 2 -, ethylidene, propylidene, trimethylene, -CH 2 CH(OH)CH 2 - are better. Especially preferably, R 200 is a methyl group, and R 201 is an ethylenyl group.

作為本發明中的聚醯亞胺前驅物的較佳的實施形態,作為R113 或R114 的1價有機基團可舉出具有1、2或3個酸基,較佳為具有1個酸基之脂肪族基、芳香族基及芳烷基等。具體而言,可舉出具有酸基之碳數6~20的芳香族基、具有酸基之碳數7~25的芳烷基。更具體而言,可舉出具有酸基之苯基及具有酸基之苄基。酸基係羥基為更佳。亦即,R113 或R114 係具有羥基之基團為較佳。 作為由R113 或R114 表示之1價有機基團,可較佳地使用提高顯影液的溶解度之取代基。 從對水性顯影液的溶解性的觀點考慮,R113 或R114 係氫原子、2-羥基芐基、3-羥基芐基及4-羥基芐基為更佳。As a preferred embodiment of the polyimide precursor in the present invention, as the monovalent organic group of R 113 or R 114 , there are 1, 2 or 3 acid groups, preferably 1 acid group. Aliphatic, aromatic and aralkyl groups. Specifically, an aromatic group having 6 to 20 carbon atoms having an acid group, and an aralkyl group having 7 to 25 carbon atoms having an acid group are mentioned. More specifically, there may be mentioned a phenyl group having an acidic group and a benzyl group having an acidic group. An acid group is more preferably a hydroxyl group. That is, R 113 or R 114 is preferably a group having a hydroxyl group. As the monovalent organic group represented by R 113 or R 114 , a substituent that improves the solubility of the developer can be preferably used. From the viewpoint of solubility in an aqueous developer, R 113 or R 114 is more preferably a hydrogen atom, 2-hydroxybenzyl, 3-hydroxybenzyl, and 4-hydroxybenzyl.

從對有機溶劑的溶解度的觀點考慮,R113 或R114 係1價有機基團為較佳。作為1價有機基團,包含直鏈或支鏈烷基、環狀烷基、芳香族基為較佳,被芳香族基取代之烷基為更佳。 烷基的碳數係1~30為較佳(當為環狀時為3以上)。烷基可以為直鏈、支鏈、環狀中的任一個。作為直鏈或支鏈烷基,例如,可舉出甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基,十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基及2-乙基己基。環狀烷基可以為單環環狀烷基,亦可以為多環環狀烷基。作為單環環狀的烷基,例如,可舉出環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環環狀的烷基,例如,可舉出金剛烷基、降莰基、莰基、莰烯基(camphenyl)、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基及蒎烯基(pinenyl)。其中,從兼顧與高靈敏度化的觀點考慮,環己基為最佳。又,作為被芳香族基取代之烷基,被後述之芳香族基取代之直鏈烷基為較佳。 作為芳香族基,可舉出經取代或未經取代之苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、茚烯環、苝環、稠五苯環、苊烯環、菲環、蒽環、稠四苯環、䓛環、三伸苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、㗁唑環、噻唑環、吡啶環、吡𠯤環、嘧啶環、噠𠯤環、吲哚𠯤環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹𠯤環、喹啉環、酞𠯤環、萘啶環、喹㗁啉環、喹唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、色烯環、口山口星環、啡㗁噻環、啡噻𠯤環或啡𠯤環。苯環為最佳。(以下,將芳香族基稱為Aro)From the viewpoint of solubility in organic solvents, R 113 or R 114 is preferably a monovalent organic group. The monovalent organic group preferably includes a linear or branched alkyl group, a cyclic alkyl group, and an aromatic group, and an alkyl group substituted with an aromatic group is more preferable. The carbon number of the alkyl group is preferably 1 to 30 (3 or more when cyclic). The alkyl group may be any of linear, branched and cyclic. Examples of linear or branched alkyl groups include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, Alkyl, octadecyl, isopropyl, isobutyl, second butyl, third butyl, 1-ethylpentyl and 2-ethylhexyl. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. Examples of monocyclic cyclic alkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl and cyclooctyl. Examples of polycyclic cyclic alkyl groups include adamantyl, norbornyl, camphenyl, camphenyl (camphenyl), decahydronaphthyl, tricyclodecanyl, tetracyclodecanyl, camphenyl Diacyl, dicyclohexyl and pinenyl. Among them, cyclohexyl group is most preferable from the viewpoint of balance and high sensitivity. Also, as the alkyl group substituted with an aromatic group, a linear alkyl group substituted with an aromatic group described later is preferable. Examples of the aromatic group include substituted or unsubstituted benzene rings, naphthalene rings, pentadene rings, indene rings, azulene rings, heptadene rings, indenene rings, perylene rings, condensed pentaphenyl rings, acenaphthene rings, etc. Alkene ring, phenanthrene ring, anthracene ring, condensed tetraphenyl ring, fenene ring, three phenylene ring, oxene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring , Pyridine ring, pyrimidine ring, dat ring, indole ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinol ring, quinoline ring, phthalein ring, naphthalene ring Pyridine ring, quinoline ring, quinazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthracene ring, thianthrene ring, chromene ring, mouth mountain mouth star ring, phenanthrene ring ring, brown thiol 𠯤 ring or brown 𠯤 ring. The benzene ring is the best. (Hereafter, the aromatic group is referred to as Aro)

又,聚醯亞胺前驅物中,於結構單元中具有氟原子亦為較佳。聚醯亞胺前驅物中的氟原子含量為10質量%以上為較佳,並且20質量%以下為更佳。上限並無特別限制,實際上為50質量%以下。Moreover, it is also preferable that a polyimide precursor has a fluorine atom in a structural unit. The content of fluorine atoms in the polyimide precursor is preferably at least 10% by mass, and more preferably at most 20% by mass. The upper limit is not particularly limited, but is actually 50% by mass or less.

又,以提高與基板的黏合性為目的,可以使具有矽氧烷結構之脂肪族基與由式(1)表示之構成單元共聚合。具體而言,作為二胺成分,可舉出雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。Also, for the purpose of improving the adhesiveness with the substrate, an aliphatic group having a siloxane structure may be copolymerized with a structural unit represented by formula (1). Specifically, bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. are mentioned as a diamine component.

由式(1)表示之構成單元係由式(1-A)表示之構成單元為較佳。 [化學式14]

Figure 02_image027
A11 及A12 表示氧原子或NH,R111 及R112 分別獨立地表示2價有機基團,R113 及R114 分別獨立地表示氫原子或1價有機基團,R113 及R114 中的至少一者為包含自由基聚合性基團之基團,自由基聚合性基團為較佳。The structural unit represented by formula (1) is preferably a structural unit represented by formula (1-A). [chemical formula 14]
Figure 02_image027
A 11 and A 12 represent an oxygen atom or NH, R 111 and R 112 independently represent a divalent organic group, R 113 and R 114 independently represent a hydrogen atom or a monovalent organic group, R 113 and R 114 At least one of them is a group containing a radical polymerizable group, preferably a radical polymerizable group.

A11 、A12 、R111 、R113 及R114 的定義分別獨立地與式(1)中的A1 、A2 、R111 、R113 及R114 相同,較佳範圍亦相同。 R112 的定義與式(5)中的R112 相同,較佳範圍亦相同。The definitions of A 11 , A 12 , R 111 , R 113 and R 114 are independently the same as those of A 1 , A 2 , R 111 , R 113 and R 114 in formula (1), and the preferred ranges are also the same. The definition of R 112 is the same as that of R 112 in formula (5), and the preferred range is also the same.

聚醯亞胺前驅物中,由式(1)表示之構成單元可以為一種,亦可以為兩種以上。又,可以包含由式(1)表示之構成單元的結構異構體。又,除了上述的式(1)的構成單元以外,聚醯亞胺前驅物還可以包含其他種類的重複結構單元。In the polyimide precursor, the structural unit represented by the formula (1) may be one kind, or two or more kinds. Moreover, structural isomers of the structural unit represented by formula (1) may be contained. In addition, the polyimide precursor may contain other types of repeating structural units in addition to the structural units of the above-mentioned formula (1).

作為本發明中的聚醯亞胺前驅物的一實施方式,可例示總構成單元的50莫耳%以上,進而為70莫耳%以上,尤其90莫耳%以上係由式(1)表示之構成單元之聚醯亞胺前驅物。作為上限,實際為100莫耳%以下。As an embodiment of the polyimide precursor in the present invention, 50 mol% or more of the total constituent units, further 70 mol% or more, especially 90 mol% or more are represented by the formula (1). The polyimide precursor of the constituent unit. The upper limit is actually 100 mol% or less.

聚醯亞胺前驅物的重量平均分子量(Mw)較佳為2000~500000,更佳為5000~100000,進一步較佳為10000~50000。又,數平均分子量(Mn)較佳為800~250000,更佳為2000~50000,進一步較佳為4000~25000。 聚醯亞胺前驅物的分子量的分散度(Mw/Mn)係1.5~3.5為較佳,2~3為進一步較佳。The weight average molecular weight (Mw) of the polyimide precursor is preferably from 2,000 to 500,000, more preferably from 5,000 to 100,000, and even more preferably from 10,000 to 50,000. Moreover, the number average molecular weight (Mn) becomes like this. Preferably it is 800-250,000, More preferably, it is 2,000-50,000, More preferably, it is 4,000-25,000. The molecular weight dispersion (Mw/Mn) of the polyimide precursor is preferably 1.5-3.5, and 2-3 is still more preferable.

聚醯亞胺前驅物可藉由使二羧酸或二羧酸衍生物與二胺反應而得到。較佳為使用鹵化劑對二羧酸或二羧酸衍生物進行鹵化之後,使其與二胺反應而得到。 聚醯亞胺前驅物的製造方法中,進行反應時,使用有機溶劑為較佳。有機溶劑可以為一種,亦可以為兩種以上。 作為有機溶劑,能夠依原料適當設定,可例示吡啶、二乙二醇二甲醚(二甘二甲醚)、N-甲基吡咯啶酮及N-乙基吡咯啶酮。The polyimide precursor can be obtained by reacting a dicarboxylic acid or a dicarboxylic acid derivative with a diamine. It is preferably obtained after halogenating dicarboxylic acid or a dicarboxylic acid derivative using a halogenating agent, and then reacting it with diamine. In the method for producing a polyimide precursor, it is preferable to use an organic solvent for the reaction. The organic solvent may be one kind, or two or more kinds. As an organic solvent, it can be set suitably according to a raw material, Pyridine, diglyme (diglyme), N-methylpyrrolidone, and N-ethylpyrrolidone can be illustrated.

製造聚醯亞胺前驅物時,包括析出固體之步驟為較佳。具體而言,使反應液中的聚醯亞胺前驅物沉澱於水中,使四氫呋喃等聚醯亞胺前驅物溶解於可溶性溶劑,藉此能夠進行固體析出。When producing the polyimide precursor, it is preferable to include the step of precipitating solid. Specifically, the polyimide precursor in the reaction liquid is precipitated in water, and the polyimide precursor such as tetrahydrofuran is dissolved in a soluble solvent, whereby solid precipitation can be performed.

<<聚苯并㗁唑前驅物>> 聚苯并㗁唑前驅物包含由下述式(2)表示之構成單元為較佳。 [化學式15]

Figure 02_image029
R121 表示2價有機基團,R122 表示4價有機基團,R123 及R124 分別獨立地表示氫原子或1價有機基團。<<Polybenzoxazole precursor>> It is preferable that the polybenzoxazole precursor contains a structural unit represented by the following formula (2). [chemical formula 15]
Figure 02_image029
R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group.

R121 表示2價有機基團。作為2價有機基團,包含脂肪族基(碳數1~24為較佳,1~12為更佳,1~6為特佳)及芳香族基(碳數6~22為較佳,6~14為更佳,6~12為特佳)中的至少一種之基團為較佳。作為構成R121 之芳香族基,可舉出上述式(1)的R111 的例。作為上述脂肪族基,直鏈脂肪族基為較佳。R121 源自4,4’-氧代二苯甲醯氯為較佳。 式(2)中,R122 表示4價有機基團。作為4價有機基團,定義與上述式(1)中的R115 相同,較佳的範圍亦相同。R122 源自2,2’-雙(3-胺基-4-羥基苯基)六氟丙烷為較佳。 R123 及R124 分別獨立地表示氫原子或1價有機基團,定義與上述式(1)中的R113 及R114 相同,較佳的範圍亦相同。R 121 represents a divalent organic group. The divalent organic groups include aliphatic groups (preferably 1-24 carbons, more preferably 1-12, particularly preferably 1-6) and aromatic groups (preferably 6-22 carbons, 6 -14 is more preferred, 6-12 is particularly preferred) at least one group is preferred. Examples of the aromatic group constituting R 121 include R 111 in the above formula (1). As the aforementioned aliphatic group, a straight-chain aliphatic group is preferred. R 121 is preferably derived from 4,4'-oxodibenzoyl chloride. In formula (2), R 122 represents a tetravalent organic group. As a tetravalent organic group, the definition is the same as that of R 115 in the above formula (1), and the preferable range is also the same. R 122 is preferably derived from 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane. R 123 and R 124 independently represent a hydrogen atom or a monovalent organic group, and their definitions are the same as those of R 113 and R 114 in the above formula (1), and their preferred ranges are also the same.

除了上述的式(2)的構成單元以外,聚苯并㗁唑前驅物還可以包含其他種類的重複結構單元。 從能夠抑制伴隨閉環的硬化膜的翹曲的產生之方面考慮,前驅物包含由下述式(SL)表示之二胺殘基來作為其他種類的重複結構單元為較佳。In addition to the constituent units of the above formula (2), the polybenzoxazole precursor may also contain other types of repeating structural units. It is preferable that the precursor contains a diamine residue represented by the following formula (SL) as another type of repeating structural unit from the viewpoint of suppressing the occurrence of warpage of the cured film accompanying ring closure.

[化學式16]

Figure 02_image031
式(SL)中,Z具有a結構和b結構,R1s 為氫原子或碳數1~10的烴基(較佳為碳數1~6,更佳為碳數1~3),R2s 為碳數1~10的烴基(較佳為碳數1~6,更佳為碳數1~3),R3s 、R4s 、R5s 、R6s 中的至少一個為芳香族基(較佳為碳數6~22,更佳為碳數6~18,特佳為碳數6~10),剩餘部分為氫原子或碳數1~30(較佳為碳數1~18,更佳為碳數1~12,特佳為碳數1~6)的有機基團,且可以分別相同亦可以不同。a結構及b結構的聚合可以為嵌段聚合或隨機聚合。Z部分中,較佳為a結構為5~95莫耳%,b結構為95~5莫耳%,a+b為100莫耳%。[chemical formula 16]
Figure 02_image031
In formula (SL), Z has structure a and structure b, R 1s is a hydrogen atom or a hydrocarbon group with 1 to 10 carbons (preferably 1 to 6 carbons, more preferably 1 to 3 carbons), and R 2s is A hydrocarbon group with 1 to 10 carbons (preferably 1 to 6 carbons, more preferably 1 to 3 carbons), at least one of R 3s , R 4s , R 5s and R 6s is an aromatic group (preferably carbon number 6-22, more preferably carbon number 6-18, particularly preferably carbon number 6-10), the remainder is hydrogen atoms or carbon number 1-30 (preferably carbon number 1-18, more preferably carbon number 1 to 12, particularly preferably an organic group with carbon number 1 to 6), and may be the same or different. The polymerization of structure a and structure b may be block polymerization or random polymerization. In the Z fraction, preferably, the a structure is 5-95 mol%, the b structure is 95-5 mol%, and a+b is 100 mol%.

式(SL)中,作為較佳的Z,可舉出b結構中的R5s 及R6s 為苯基者。又,由式(SL)表示之結構的分子量係400~4,000為較佳,500~3,000為更佳。分子量能夠藉由通常所使用之凝膠滲透層析法求出。藉由將上述分子量設為上述範圍,能夠兼備降低聚苯并㗁唑前驅物的脫水閉環後的彈性率,且抑制翹曲之效果和提高溶解性之效果。In the formula (SL), preferred Z includes those in which R 5s and R 6s in the structure b are phenyl groups. Moreover, the molecular weight of the structure represented by formula (SL) is preferably 400-4,000, more preferably 500-3,000. The molecular weight can be determined by the commonly used gel permeation chromatography. By setting the molecular weight to the above range, it is possible to reduce the modulus of elasticity after dehydration and ring closure of the polybenzoxazole precursor, suppress warpage, and improve solubility.

當前驅物作為其他種類的重複結構單元包含由式(SL)表示之二胺殘基時,從可提高鹼溶性的方面考慮,還包含從四羧酸二酐去除酸二酐之後殘存之四羧酸殘基來作為重複結構單元為較佳。作為該等四羧酸殘基的例,可舉出式(1)中的R115 的例。When the precursor contains a diamine residue represented by the formula (SL) as another type of repeating structural unit, it also contains tetracarboxylic Acid residues are preferred as repeating structural units. Examples of such tetracarboxylic acid residues include the example of R 115 in formula (1).

聚苯并㗁唑前驅物的重量平均分子量(Mw)較佳為2000~500000,更佳為5000~100000,進一步較佳為10000~50000。又,數平均分子量(Mn)較佳為800~250000,更佳為2000~50000,進一步較佳為4000~25000。 聚苯并㗁唑前驅物的分子量的分散度(Mw/Mn)係1.5~3.5為較佳,2~3為更佳。The weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably from 2,000 to 500,000, more preferably from 5,000 to 100,000, and even more preferably from 10,000 to 50,000. Moreover, the number average molecular weight (Mn) becomes like this. Preferably it is 800-250,000, More preferably, it is 2,000-50,000, More preferably, it is 4,000-25,000. The molecular weight dispersion (Mw/Mn) of the polybenzoxazole precursor is preferably 1.5-3.5, more preferably 2-3.

本發明的感光性樹脂組成物中的聚合物前驅物的含量相對於組成物的總固體成分係20質量%以上為較佳,30質量%以上為更佳,40質量%以上為進一步較佳,50質量%以上為進一步較佳,60質量%以上為進一步較佳,70質量%以上為進一步較佳。又,本發明的感光性樹脂組成物中的聚合物前驅物的含量相對於組成物的總固體成分係99.5質量%以下為較佳,99質量%以下為更佳,98質量%以下為進一步較佳,95質量%以下為進一步較佳,95質量%以下為進一步較佳。 本發明的感光性樹脂組成物可以僅包含一種聚合物前驅物,亦可以包含兩種以上。當包含兩種以上時,合計量成為上述範圍為較佳。The content of the polymer precursor in the photosensitive resin composition of the present invention is preferably at least 20% by mass, more preferably at least 30% by mass, and still more preferably at least 40% by mass, based on the total solid content of the composition. It is more preferably 50 mass % or more, 60 mass % or more is still more preferable, and 70 mass % or more is still more preferable. In addition, the content of the polymer precursor in the photosensitive resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, and still more preferably 98% by mass or less with respect to the total solid content of the composition. Preferably, 95% by mass or less is more preferred, and 95% by mass or less is still more preferred. The photosensitive resin composition of the present invention may contain only one kind of polymer precursor, or may contain two or more kinds. When two or more types are contained, it is preferable that the total amount is within the above-mentioned range.

<加熱時酸性度降低之化合物(酸消失劑)> 酸消失劑係於400℃下加熱之情況下酸性度降低之化合物為較佳,300℃為進一步較佳,250℃為進一步較佳,200℃為進一步較佳,180℃為進一步較佳,150℃為尤其進一步較佳。下限並無特別限制,但實際上為80℃。 上述加熱時間例如係1小時。又,加熱於氮環境下進行,此時的壓力係1氣壓為較佳。 又,本發明中使用的酸消失劑於後述之加熱步驟中的溫度下酸性度降低為較佳。 又,本發明中使用之酸消失劑的趣旨係排除只要為大於硬化膜的耐熱溫度之溫度則酸性度不會降低之化合物。 本說明書中,如下述那樣對酸性度降低之情況進行測定並定義。 將特定化合物於氮環境下1氣壓中加熱1小時。溶解於含水之溶劑來製作0.1mol/L的水溶液。用pH計進行pH測定,從而能夠確認酸性度降低之情況。<Compounds that decrease acidity when heated (acid disappearing agent)> The acid disappearing agent is a compound whose acidity decreases when heated at 400°C is preferred, 300°C is further preferred, 250°C is further preferred, 200°C is further preferred, 180°C is further preferred, 150°C is still more preferred °C is especially further preferred. The lower limit is not particularly limited, but is actually 80°C. The above heating time is, for example, 1 hour. In addition, heating is carried out under a nitrogen atmosphere, and the pressure at this time is preferably 1 atmosphere. In addition, it is preferable that the acidity of the acid disappearing agent used in the present invention is lowered at the temperature in the heating step described later. In addition, the purpose of the acid disappearing agent used in the present invention is to exclude compounds whose acidity does not decrease as long as the temperature is higher than the heat resistance temperature of the cured film. In this specification, the case where acidity falls is measured and defined as follows. Specific compounds were heated at 1 atmosphere under nitrogen for 1 hour. Dissolve in a solvent containing water to make a 0.1mol/L aqueous solution. By measuring pH with a pH meter, it is possible to confirm the decrease in acidity.

酸消失劑的加熱(例如,200℃下的加熱)前,該化合物的pKa係-10以上為較佳,-5以上為更佳,-3以上為進一步較佳。作為上限,例如係5.0以下為較佳,2.5以下為更佳,1.8以下為進一步較佳。藉由將pKa設為上述下限值以上,抑制聚合物前驅物的水解反應,從該方面考慮為較佳。藉由設為上述上限值以下,阻礙聚合物前驅物的環化反應,從該方面考慮為較佳。 本說明書中所述的pKa是指,考慮到從氧釋放氫離子之解離反應,藉由負的常用對數pKa表示該平衡常數Ka。是指pKa越小酸越強。除非另有說明,則將pKa設為基於ACD/ChemSketch的計算值。或者,可以參閱日本化學會編“改訂5版 化學便覽 基礎篇”中所記載的值。基於加熱的pKa的上升(ΔpKa)(加熱前後的pKa差)係2.0以上為較佳,5.0以上為更佳,8.0以上為進一步較佳。Before heating (for example, heating at 200° C.) of the acid disappearing agent, the pKa of the compound is preferably not less than -10, more preferably not less than -5, and still more preferably not less than -3. As an upper limit, for example, 5.0 or less is preferable, 2.5 or less is more preferable, and 1.8 or less is still more preferable. It is preferable from the point which suppresses the hydrolysis reaction of a polymer precursor by making pKa more than the said lower limit. It is preferable from the viewpoint of inhibiting the cyclization reaction of a polymer precursor by setting it as below the said upper limit. The pKa described in the present specification means that the equilibrium constant Ka is represented by a negative common logarithm pKa in consideration of the dissociation reaction of releasing hydrogen ions from oxygen. The lower the pKa, the stronger the acid. Unless otherwise stated, pKa is set to the calculated value based on ACD/ChemSketch. Alternatively, the values described in "Chemical Handbook, Basic Edition, Revised 5th Edition" edited by the Chemical Society of Japan can be referred to. The increase in pKa by heating (ΔpKa) (difference in pKa before and after heating) is preferably 2.0 or more, more preferably 5.0 or more, and still more preferably 8.0 or more.

酸消失劑的分子量係2000以下為較佳,1000以下為更佳,500以下為進一步較佳。下限並無特別限制,實際為80以上。The molecular weight of the acid disappearing agent is preferably 2000 or less, more preferably 1000 or less, and more preferably 500 or less. The lower limit is not particularly limited, but is actually 80 or more.

酸消失劑係由式A1~A3中的任一個表示之化合物為較佳,由式A1或式A2表示之化合物為更佳,由式A1表示之化合物為進一步較佳。The acid disappearing agent is preferably a compound represented by any one of formulas A1 to A3, more preferably a compound represented by formula A1 or formula A2, and even more preferably a compound represented by formula A1.

(X)m -LA -(Y)n ・・・・式A1 式中,X表示-COOH、-SO3 H或-PO3 H2 ,LA 表示m+n價連接基,Y表示-OH、-COOH或-NH(RN )。RN 係氫原子或有機基團,m表示1~4的整數,n表示1~4的整數。 RN 的有機基團係烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)為較佳,氫原子或烷基為更佳,氫原子或甲基為進一步較佳,氫原子為進一步較佳。 RN 的有機基團可以具有後述之取代基T。RN 的有機基團為複數個時彼此鍵結或經由下述中定義之連接基L鍵結而可以形成環。作為形成之環,可舉出脂環,環烷基環或環烯基環或於此夾有具有雜原子之連接基Lh(1~12個為較佳,1~6個為更佳,1~3個為進一步較佳)之環為更佳。脂環的碳數係3~22為較佳,3~12為更佳,3~8為進一步較佳。脂環可以形成為多環環或螺環。以下,本說明書中將該可以形成之環稱為環K。仍然而,本發明中,RN 的有機基團不具有取代基T為較佳。(X) m -L A -(Y) n ・・・・Formula A1 In the formula, X represents -COOH, -SO 3 H or -PO 3 H 2 , L A represents the m+n valent linking group, Y represents- OH, -COOH, or -NH( RN ). R N is a hydrogen atom or an organic group, m represents an integer of 1-4, and n represents an integer of 1-4. The organic group of RN is alkyl (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), aryl (preferably 6-22 carbons, 6-18 more preferably, 6-10 is further preferred) or aralkyl (carbon number 7-23 is preferred, 7-19 is more preferred, 7-11 is further preferred) is preferred, hydrogen atom or alkyl More preferably, a hydrogen atom or a methyl group is further preferred, and a hydrogen atom is further preferred. The organic group of RN may have a substituent T described later. When there are plural organic groups in R N , they may be bonded to each other or via a linker L defined below to form a ring. As the formed ring, alicyclic ring, cycloalkyl ring or cycloalkenyl ring or linking group Lh with heteroatoms interposed therein (preferably 1 to 12, more preferably 1 to 6, 1 ~ 3 rings are more preferable) rings are even better. The carbon number of the alicyclic ring is preferably 3-22, more preferably 3-12, and still more preferably 3-8. Alicyclic rings can be formed as polycyclic rings or spiro rings. Hereinafter, the ring that can be formed is referred to as ring K in this specification. Still, in the present invention, it is preferable that the organic group of R N has no substituent T.

LA 表示選自-CO-、-O-、-NH-、脂肪族連接基、芳基連接基及包括該等的組合之群組中之m+n價連接基為較佳。脂肪族連接基係與烷烴連接基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯烴連接基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基連接基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或與該等的組合有關之連接基為較佳。 其中,烷烴連接基是指由烷烴(飽和烴)構成之連接基。當烷烴連接基係2價連接基時,成為伸烷基。關於烯烴連接基、芳基連接基等亦同樣認為。 LA 中,於發揮本發明的效果之範圍內可以夾有具有下述雜原子之連接基Lh,夾有數量係0~3個為較佳,0或1個為更佳,0個為進一步較佳。 又,LA 係連接X與Q之原子數為3以上的連接基為較佳。連接X與Q之原子數的上限並無特別限制,實際為6以下。上述連接之原子數是指,位於連結規定的結構部之間(例如,X與Q)之路徑且與連接有關的最少的原子數。例如,當-CH2 -C(=O)-O-時,連接的原子數成為3。L A represents an m+n-valent linking group selected from the group consisting of -CO-, -O-, -NH-, aliphatic linking group, aryl linking group, and combinations thereof, preferably. The aliphatic linking group is related to the alkane linking group (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), olefin linking group (preferably 2-12 carbons, 2-6 6 is more preferred, 2 to 3 are further preferred), aryl linking group (6 to 22 carbons is preferred, 6 to 18 is more preferred, 6 to 10 is further preferred) or a combination thereof The linker is preferred. Here, the alkane linking group refers to a linking group composed of alkane (saturated hydrocarbon). When the alkane linking group is a divalent linking group, it becomes an alkylene group. The same applies to olefinic linking groups, aryl linking groups, and the like. In L A , linking group Lh having the following heteroatoms may be contained within the scope of exerting the effect of the present invention, and the number of contained heteroatoms is preferably 0 to 3, 0 or 1 is more preferable, and 0 is further better. Also, L A is preferably a linking group with 3 or more atoms connecting X and Q. The upper limit of the number of atoms connecting X and Q is not particularly limited, but is actually 6 or less. The above-mentioned number of atoms in the connection refers to the minimum number of atoms in the path between the structural parts specified in the connection (for example, X and Q) and related to the connection. For example, in the case of -CH 2 -C(=O)-O-, the number of atoms connected becomes three.

RN 可以於發揮本發明的效果之範圍經由或不經由連接基L與LA 鍵結而形成環。作為所形成之環,可舉出上述環K。然而,RN 不與LA 鍵結而形成環為更佳。R N may form a ring by bonding with LA via linker L or not via a linker L within the range of exerting the effect of the present invention. The ring K to be formed includes the aforementioned ring K. However, it is more preferable that R N forms a ring without being bonded to LA.

m係1或2為較佳,1為更佳。n係1或2為較佳,1為更佳。 m+n係2~4為較佳,2為進一步較佳。 又,式A1中,m≤n為較佳,亦可以為m<n。n-m係0或1為更佳。 m為2以上時,複數個X可以相同,亦可以不同。n為2以上時,複數個Y可以相同,亦可以不同。m is preferably 1 or 2, and 1 is more preferred. The n is 1 or 2 is preferable, and 1 is more preferable. The m+n system is preferably 2 to 4, and 2 is still more preferable. In addition, in formula A1, m≤n is preferable, and m<n may also be satisfied. n-m is more preferably 0 or 1. When m is 2 or more, a plurality of Xs may be the same or different. When n is 2 or more, a plurality of Ys may be the same or different.

式A1中,X係-SO3 H為較佳。又,Y係-NH(RN )為較佳,-NH2 為更佳。 又,本發明中,式A1中,LA 係連接之原子數為3以上的連接基為較佳。連接之原子數的上限並無特別限定,實際為6以下。藉由設為該等範圍,由Y表示之基團與由X表示之酸基於分子內易進行反應。In Formula A1, X is -SO 3 H is preferred. Also, -NH(R N ) is preferable, and -NH 2 is more preferable. Also, in the present invention, in formula A1, L A is preferably a linking group having 3 or more atoms connected thereto. The upper limit of the number of linked atoms is not particularly limited, but is actually 6 or less. By setting these ranges, the group represented by Y and the acid represented by X easily react on an intramolecular basis.

關於由式A1表示之化合物,於其較佳的態樣中,解釋為係由Y表示之基團與由X表示之酸基於分子內反應,且藉由X發生變化而酸性度降低者。Regarding the compound represented by formula A1, in its preferred form, it is explained that the group represented by Y reacts with the acid represented by X based on the intramolecular reaction, and the acidity decreases due to the change of X.

以下,例示由式A1表示之化合物。由式A1表示之化合物並不限定於這些是毋庸置疑的。 [化學式17]

Figure 02_image033
[化學式18]
Figure 02_image035
Hereinafter, the compound represented by Formula A1 is illustrated. It goes without saying that the compound represented by formula A1 is not limited to these. [chemical formula 17]
Figure 02_image033
[chemical formula 18]
Figure 02_image035

(X)m -LA -(Q)n ・・・・式A2 式中,X表示-COOH、-SO3 H或-PO3 H2 ,LA 表示m+n價連接基,Q表示藉由加熱而釋放鹼成分之基團。加熱溫度與上述酸性度降低之溫度相同。 Q表示-CONH(RN )、-OCONH(RN )、-N(RN )CONH(RN )或-N(RN3 + A- 。A- 為成抗衡離子之原子或原子組,例如可舉出鹵素原子。 X、LA 、m、n及RN 的定義分別與式A1中的X、LA 、m、n及RN 相同,較佳的範圍亦相同。 由式A2表示之化合物中,於其較佳的態樣中,解釋為係由Q表示之基團藉由熱而分解並釋放胺成分,且藉由對由X表示之酸基進行中和而酸性度降低者。(X) m -L A -(Q) n ・・・・Formula A2 In the formula, X represents -COOH, -SO 3 H or -PO 3 H 2 , L A represents m+n valent linking group, Q represents borrow A group that releases the base component by heating. The heating temperature is the same as the above-mentioned temperature for reducing the acidity. Q represents -CONH(R N ), -OCONH(R N ), -N(R N )CONH(R N ) or -N(R N ) 3 + A - . A - is an atom or group of atoms forming a counter ion, such as a halogen atom. The definitions of X, LA, m, n, and R N are the same as those of X , LA, m, n, and R N in Formula A1 , respectively, and the preferred ranges are also the same. In the compound represented by formula A2, in its preferred form, it is explained that the group represented by Q decomposes by heat and releases the amine component, and by neutralizing the acid group represented by X Reducers of acidity.

以下,例示由式A2表示之化合物。由式A2表示之化合物並不限定於此是毋庸置疑的。 [化學式19]

Figure 02_image037
Hereinafter, the compound represented by Formula A2 is illustrated. It goes without saying that the compound represented by formula A2 is not limited thereto. [chemical formula 19]
Figure 02_image037

Z-(LC -COOH)nz ・・・・式A3 式中,Z表示nz價有機基團,LC 表示*1 -(C=O)C(Ra2 -*2 、-CH(Rb )-或-C(Rb2 -,Ra 表示氫原子、烷基、烯基、芳基或芳烷基,Rb 表示烷基、烯基、芳基或芳烷基,*1 表示Z側的鍵結位置,*2 表示COOH側的鍵結位置,nz為1~4的整數。 Z與Ra 或Rb 可以鍵結而形成環。Z-(LC -COOH) nz ・・・・Formula A3 In the formula, Z represents an nz-valent organic group, and L C represents * 1 -( C =O)C(R a ) 2 -* 2 , -CH( R b )- or -C(R b ) 2 -, R a represents hydrogen atom, alkyl, alkenyl, aryl or aralkyl, R b represents alkyl, alkenyl, aryl or aralkyl, * 1 represents the bonding position on the Z side, * 2 represents the bonding position on the COOH side, and nz is an integer of 1-4. Z and R a or R b may be bonded to form a ring.

Ra 表示氫原子、烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳),氫原子、烷基、芳基為更佳,氫原子或烷基為進一步較佳,氫原子為進一步較佳。 Rb 表示烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳),烷基、芳基為更佳,烷基為進一步較佳。 為複數個時的Ra 、Rb 可以彼此相同,亦可以不同。Z、Ra 、Rb 可以彼此鍵結(Ra 、Rb 為複數個時相同種類的取代基可以鍵結)或經由連接基L鍵結而形成環,作為較佳的環,可舉出上述環K。R a represents a hydrogen atom, an alkyl group (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), alkenyl (preferably 2-12 carbons, 2-6 More preferably, 2-3 is further preferred), aryl group (6-22 carbon number is preferred, 6-18 is more preferred, 6-10 is further preferred) or aralkyl group (carbon number 7-23 is Preferably, 7 to 19 are more preferred, and 7 to 11 are further preferred), hydrogen atoms, alkyl groups, and aryl groups are more preferred, hydrogen atoms or alkyl groups are further preferred, and hydrogen atoms are further preferred. R b represents alkyl (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), alkenyl (preferably 2-12 carbons, more preferably 2-6, 2-3 is more preferred), aryl group (6-22 carbon number is preferred, 6-18 is more preferred, 6-10 is further preferred) or aralkyl group (7-23 carbon number is preferred, 7-19 are more preferable, 7-11 are still more preferable), alkyl and aryl are more preferable, and alkyl is still more preferable. When R a and R b are plural, they may be the same as or different from each other. Z, R a , and R b may be bonded to each other (when there are plural R a and R b , substituents of the same type may be bonded) or bonded via a linking group L to form a ring. Preferred rings include The aforementioned ring K.

Z係烷烴連接基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯烴連接基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基連接基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、羧基、羰基及氧原子或包括該等組合之連接基為較佳,烷烴連接基、芳基連接基、羰基或包含該等組合之連接基為更佳。 nz為1~4,1或2為較佳,1為更佳。 由式A3表示之化合物中,於其較佳的態樣中,解釋為係COOH基藉由加熱而引起脫炭酸反應,且酸性度降低者。Z-series alkane linking group (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), olefin linking group (preferably 2-12 carbons, more preferably 2-6 , 2 to 3 are further preferred), aryl linking group (6 to 22 carbons is preferred, 6 to 18 is more preferred, 6 to 10 is further preferred), carboxyl, carbonyl and oxygen atoms or include these A combined linking group is preferred, an alkane linking group, an aryl linking group, a carbonyl group or a linking group comprising these combinations is more preferred. nz is 1 to 4, preferably 1 or 2, more preferably 1. Among the compounds represented by the formula A3, in its preferred form, it is explained that the COOH group causes a decarboxylation reaction by heating, and the acidity decreases.

式A3係下述式A3-1~A3-3中的任一種為較佳。 Z1 -(CHRb -COOH)nz ・・・・式A3-1 Z1 -(CRb 2 -COOH)nz ・・・・式A3-2 Z2 -(CO-CRa 2 -COOH)nz ・・・・式A3-3 式中,Ra 、Rb 、nz的定義分別與式A3中的Ra 、Rb 、nz相同,較佳的範圍亦相同。為複數個時的Ra 及Rb 可以彼此鍵結而形成環,作為較佳的環可舉出上述環K。Ra 及Rb 可以與Z1 或Z2 鍵結而形成環,作為較佳的環可舉出環K。為複數個時的Ra 及Rb 可以彼此相同,亦可以不同。 Z1 為烷烴連接基、烯烴連接基、芳基連接基或芳烷基。其中,芳基連接基為較佳,若以環結構表示,可舉出上述芳香族Aro的例,萘環或苯環為特佳。烷烴連接基等的較佳的範圍的定義與上述Z中的烷烴連接基等的較佳的範圍相同。 Z2 係烷烴連接基、芳基連接基、羰基或包含該等組合之連接基為更佳。烷烴連接基等的較佳的範圍的定義與上述Z中的烷烴連接基等的較佳的範圍相同。 Ra 、Rb 、Z1 、Z2 還可以具有取代基T。取代基T為複數個時可以彼此鍵結或經由或不經由連接基L與式中的Ra 、Rb 、Z1 、Z2 鍵結而形成環。Z1 及Z2 的烷基鏈、烯基鏈中可以夾有具有雜原子之連接基Lh,夾有個數係1~12為較佳,1~6為更佳,1~3為進一步較佳。Ra 、Rb 、Z1 、Z2 當然可以不具有取代基。Formula A3 is preferably any one of the following formulas A3-1 to A3-3. Z 1 -(CHR b -COOH) nz ・・・・Formula A3-1 Z 1 -(CR b 2 -COOH) nz ・・・・Formula A3-2 Z 2 -(CO-CR a 2 -COOH) nz ・・・・Formula A3-3 In the formula, the definitions of R a , R b , and nz are the same as those of R a , R b , and nz in Formula A3, respectively, and the preferred ranges are also the same. When there are a plurality of R a and R b , they may be bonded to each other to form a ring, and the ring K mentioned above is mentioned as a preferable ring. R a and R b may be bonded to Z 1 or Z 2 to form a ring, and ring K is a preferred ring. When R a and R b are plural, they may be the same as or different from each other. Z 1 is an alkane linker, an alkene linker, an aryl linker, or an aralkyl group. Among them, the aryl linking group is preferable, and if represented by a ring structure, examples of the above-mentioned aromatic Aro can be mentioned, and a naphthalene ring or a benzene ring is particularly preferable. The definition of the preferable range of the alkane linking group etc. is the same as the preferable range of the alkane linker etc. in Z mentioned above. Z is more preferably an alkane linking group, an aryl linking group, a carbonyl group or a linking group comprising a combination thereof. The definition of the preferable range of the alkane linking group etc. is the same as the preferable range of the alkane linker etc. in Z mentioned above. R a , R b , Z 1 , and Z 2 may further have a substituent T. When there are plural substituents T, they may be bonded to each other or bonded to R a , R b , Z 1 , and Z 2 in the formula via or not via a linker L to form a ring. The alkyl chains and alkenyl chains of Z1 and Z2 may contain linking groups Lh with heteroatoms, the number of which is 1-12 is preferred, 1-6 is more preferred, and 1-3 is further preferred. good. Of course, R a , R b , Z 1 , and Z 2 may not have a substituent.

以下,例示由式A3表示之化合物。由式A3表示之化合物並不限定於這些是毋庸置疑的。 [化學式20]

Figure 02_image039
Hereinafter, the compound represented by Formula A3 is illustrated. It goes without saying that the compound represented by formula A3 is not limited to these. [chemical formula 20]
Figure 02_image039

作為取代基T,可舉出烷基(碳數1~24為較佳,1~12為更佳,1~6為特佳)、烯基(碳數2~24為較佳,2~12為更佳,2~6為特佳)、烷氧基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、羥基、胺基(碳數0~24為較佳,0~12為更佳,0~6為特佳)、硫醇基、羧基、醯基(碳數2~12為較佳,2~6為更佳,2~3為特佳)、醯氧基(碳數2~12為較佳,2~6為更佳,2~3為特佳)、芳醯基(碳數7~23為較佳,7~19為更佳,7~11為特佳)、芳醯氧基(碳數7~23為較佳,7~19為更佳,7~11為特佳)、(甲基)丙烯醯基、(甲基)丙烯醯氧基、鹵素原子(例如,氟原子、氯原子、溴原子、碘原子)、氧代基(=O)、亞胺基(=NR)、次烷基(=C(R)2 )等。取代基T的伸烷基鏈中可以夾有雜原子。取代基T所具有之烷基、烯基、芳基、芳烷基還可以經其他取代基取代。R的定義與上述RN 相同。Examples of the substituent T include alkyl (preferably 1 to 24 carbons, more preferably 1 to 12, particularly preferably 1 to 6), alkenyl (preferably 2 to 24 carbons, 2 to 12 is more preferred, 2-6 is particularly preferred), alkoxy group (1-12 carbon number is preferred, 1-6 is more preferred, 1-3 is further preferred), aralkyl group (carbon number 7-23 is more preferred, 7-19 is more preferred, 7-11 is further preferred), hydroxyl group, amino group (preferably carbon number 0-24, 0-12 is more preferred, 0-6 is particularly preferred), sulfur Alcohol group, carboxyl group, acyl group (preferably 2-12 carbons, more preferably 2-6, particularly preferably 2-3), acyloxy groups (preferably 2-12 carbons, more preferably 2-6 preferably, 2-3 is particularly preferred), aryl group (7-23 carbon number is better, 7-19 is more preferred, 7-11 is particularly preferred), aryloxy group (7-23 carbon number is more preferred) best, 7-19 is more preferable, 7-11 is especially preferable), (meth)acryl group, (meth)acryloxy group, halogen atom (for example, fluorine atom, chlorine atom, bromine atom, iodine atom ), oxo group (=O), imino group (=NR), alkylene group (=C(R) 2 ), etc. The alkylene chain of the substituent T may contain heteroatoms. The alkyl group, alkenyl group, aryl group, and aralkyl group contained in the substituent T may be substituted with other substituents. The definition of R is the same as that of RN above.

連接基L為伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜伸芳基(碳數1~12為較佳,1~6為更佳,1~4為進一步較佳;作為雜原子,例如可舉出氮原子、氧原子、硫原子)、氧原子、硫原子、羰基、-NR-或包含該組合之基團。除了氫原子以外,構成連接基L之原子之數量係1~24為較佳,1~12為更佳,1~6為特佳。連接基所連接之原子數係10以下為較佳,8以下為更佳。作為下限,為1以上。R的定義與上述RN 相同。The linking group L is alkylene (preferably 1-12 carbons, more preferably 1-6, further preferably 1-3), alkenylene (preferably 2-12 carbons, 2-6 more preferably), arylylene (preferably 6-22 carbons, more preferably 6-18, further preferably 6-10), heteroarylylene (preferably 1-12 carbons, 1-6 More preferably, 1 to 4 are still more preferable; Examples of heteroatoms include a nitrogen atom, an oxygen atom, a sulfur atom), an oxygen atom, a sulfur atom, a carbonyl group, -NR-, or a group including a combination thereof. In addition to hydrogen atoms, the number of atoms constituting the linking group L is preferably 1-24, more preferably 1-12, and particularly preferably 1-6. The number of atoms connected by the linking group is preferably 10 or less, more preferably 8 or less. The lower limit is 1 or more. The definition of R is the same as that of RN above.

作為包含雜原子之連接基Lh,可舉出氧原子、硫原子、羰基、硫代羰基、磺醯基、-NR-或包含該等組合之連接基。構成包含雜原子之連接基Lh之原子的數量係1~12為較佳,1~6為更佳,1~3為特佳。夾在包含雜原子之連接基Lh的特定基團中之原子的數量係1~12為較佳,1~6為更佳,1~3為特佳。R的定義與上述RN 相同。Examples of the linking group Lh containing a heteroatom include an oxygen atom, a sulfur atom, a carbonyl group, a thiocarbonyl group, a sulfonyl group, -NR-, or a linking group containing a combination thereof. The number of atoms constituting the heteroatom-containing linking group Lh is preferably 1-12, more preferably 1-6, and particularly preferably 1-3. The number of atoms interposed in the specific group of the linking group Lh containing a heteroatom is preferably 1-12, more preferably 1-6, and particularly preferably 1-3. The definition of R is the same as that of RN above.

本發明中所使用之酸消失劑可以為相當於式A1~式A3的2個以上之化合物。例如,如由(X)2 -連接基-(Y)(Q)表示之結構,例示即相當於式A1又相當於式A2之化合物等。The acid disappearing agent used in the present invention may be two or more compounds corresponding to formulas A1 to A3. For example, the structure represented by (X) 2 -linking group-(Y)(Q) exemplifies compounds corresponding to both formula A1 and formula A2, and the like.

作為本發明的實施形態的一例,亦能夠摻合酸性度降低之溫度不同之兩種以上的酸消失劑。藉由該等構成,酸性度階段性降低,能夠使加熱時的聚合物前驅物的環化反應更有效地進行。實施形態中,摻合酸性度降低之溫度中存在20~200℃的差異之兩種以上的酸消失劑為較佳。As an example of the embodiment of the present invention, it is also possible to blend two or more types of acid disappearing agents at which the temperature at which the acidity decreases is different. With these configurations, the acidity decreases stepwise, and the cyclization reaction of the polymer precursor during heating can be more efficiently progressed. In the embodiment, it is preferable to blend two or more types of acid disappearing agents having a difference of 20 to 200° C. in the temperature at which the acidity decreases.

酸消失劑於感光性樹脂組成物中,0.0025質量%以上為較佳,0.01質量%以上為更佳,0.02質量%以上為進一步較佳。作為上限,例如,2.5質量%以下為較佳,1.5質量%以下為更佳,0.25質量%以下為進一步較佳。 感光性樹脂組成物中,固體成分中的酸消失劑的比率係0.01質量%以上為較佳,0.05質量%以上為更佳,0.1質量%以上為進一步較佳。作為上限,例如10.0質量%以下為較佳,5.0質量%以下為更佳,1.0質量%以下為進一步較佳。 作為對聚合物前驅物100質量份的酸消失劑的摻合比率,0.015質量份以上為較佳,0.075質量份以上為更佳,0.15質量份以上為進一步較佳。作為上限,例如15.0質量份以下為較佳,7.5質量份以下為更佳,1.5質量份以下為進一步較佳。 藉由將酸消失劑的含量設為上述下限值以上,能夠確保良好的保存穩定性,從該方面考慮為較佳。藉由設為上述上限值以下,能夠確保金屬的耐腐蝕,從該方面考慮為較佳。 酸消失劑可以使用一種,亦可以使用複數種。當使用複數種時,其合計量成為上述中規定的範圍。The amount of the acid disappearing agent in the photosensitive resin composition is preferably at least 0.0025% by mass, more preferably at least 0.01% by mass, and still more preferably at least 0.02% by mass. As an upper limit, for example, 2.5 mass % or less is preferable, 1.5 mass % or less is more preferable, 0.25 mass % or less is still more preferable. In the photosensitive resin composition, the ratio of the acid disappearing agent in the solid content is preferably at least 0.01% by mass, more preferably at least 0.05% by mass, and still more preferably at least 0.1% by mass. As an upper limit, for example, 10.0 mass % or less is preferable, 5.0 mass % or less is more preferable, and 1.0 mass % or less is further more preferable. The blending ratio of the acid disappearing agent to 100 parts by mass of the polymer precursor is preferably at least 0.015 parts by mass, more preferably at least 0.075 parts by mass, and still more preferably at least 0.15 parts by mass. As an upper limit, for example, it is preferable that it is 15.0 mass parts or less, it is more preferable that it is 7.5 mass parts or less, and it is still more preferable that it is 1.5 mass parts or less. Favorable storage stability can be ensured by making content of an acid disappearing agent more than the said lower limit, and it is preferable from this point. By setting it as below the said upper limit, it is preferable from this point that the corrosion resistance of metal can be ensured. One type of acid disappearing agent may be used, and plural types may be used. When using plural types, the total amount is within the range prescribed above.

<溶劑> 本發明的感光性樹脂組成物含有溶劑為較佳。溶劑能夠任意使用公知的溶劑。溶劑較佳為有機溶劑。作為有機溶劑,可舉出酯類、醚類、酮類、芳香族烴類、亞碸類、醯胺類等化合物。 作為酯類,例如作為較佳者,可舉出乙酸乙酯、乙酸正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例如,烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例如,3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例如,2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等。 作為醚類,例如作為較佳者,可舉出二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等。 作為酮類,例如作為較佳者,可舉出甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮等。 作為芳香族烴類,例如作為較佳者,可舉出甲苯、二甲苯、苯甲醚、檸檬烯等。 作為亞碸類,例如作為較佳者,可舉出二甲基亞碸。 作為醯胺類,作為較佳者,可舉出N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺等。<Solvent> It is preferable that the photosensitive resin composition of this invention contains a solvent. As the solvent, known solvents can be used arbitrarily. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, aromatic hydrocarbons, phenylenes, and amides. As esters, for example, ethyl acetate, n-butyl acetate, isobutyl acetate, pentyl formate, isopentyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, etc. Esters, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetates (e.g. methyl alkoxyacetate, Ethyl alkoxyacetate, butyl alkoxyacetate (e.g. methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate etc.)), alkyl 3-alkoxypropionates (for example, methyl 3-alkoxypropionate, ethyl 3-alkoxypropionate, etc. (for example, methyl 3-methoxypropionate , ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-alkoxypropionates (for example, 2- Methyl 2-alkoxypropionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate , propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkoxy-2-methylpropionate and 2- Ethyl alkoxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate Esters, ethyl pyruvate, propyl pyruvate, methyl acetylacetate, ethyl acetylacetate, methyl 2-oxobutyrate, ethyl 2-oxobutyrate, etc. Examples of ethers include diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, and ethyl cellosolve. Acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropylene ether acetate etc. As ketones, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, etc. are mentioned as preferable ones. Examples of aromatic hydrocarbons include toluene, xylene, anisole, limonene, and the like as preferred ones. As the thionines, for example, dimethyl thionine is preferable. As amides, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide, N,N- Dimethylformamide, etc.

關於溶劑,從塗佈面狀的改良等的觀點考慮,混合兩種以上之形態亦為較佳。 本發明中,選自3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、N-甲基-2-吡咯啶酮、丙二醇甲醚及丙二醇甲醚乙酸酯中之一種溶劑或由兩種以上構成之混合溶劑為較佳。同時使用二甲基亞碸和γ-丁內酯為特佳。Regarding the solvent, it is also preferable to mix two or more forms from the viewpoint of improving the coating surface shape and the like. In the present invention, selected from methyl 3-ethoxy propionate, ethyl 3-ethoxy propionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate , Methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethyl sulfide, ethyl carbitol acetate, butyl carbitol One solvent among acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, and propylene glycol methyl ether acetate, or a mixed solvent consisting of two or more of them is preferred. It is particularly preferable to use dimethylsulfoxide and γ-butyrolactone at the same time.

關於溶劑的含量,從塗佈性的觀點考慮,設為本發明的感光性樹脂組成物的總固體成分濃度成為5~80質量%之量為較佳,設為成為5~75質量%之量為更佳,設為成為10~70質量%之量為進一步較佳,設為成為40~70質量%為更進一步較佳。溶劑的含量依所希望的厚度和塗佈方法來進行調節即可。 溶劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上溶劑時,其合計為上述範圍為較佳。The content of the solvent is preferably in an amount of 5 to 80% by mass, and preferably in an amount of 5 to 75% by mass, of the total solid content concentration of the photosensitive resin composition of the present invention from the viewpoint of coatability. More preferably, it is still more preferable to set it as the quantity of 10-70 mass %, and it is still more preferable to set it as 40-70 mass %. The content of the solvent may be adjusted according to the desired thickness and coating method. A solvent may contain only 1 type, and may contain 2 or more types. When two or more solvents are contained, their total is preferably within the above range.

<光活性化合物> 本發明中,感光性樹脂組成物包含光活性化合物。作為光活性化合物的例,可舉出光聚合起始劑、光酸產生劑及光硬化促進劑。<Photoactive compounds> In the present invention, the photosensitive resin composition contains a photoactive compound. As an example of a photoactive compound, a photoinitiator, a photoacid generator, and a photohardening accelerator are mentioned.

<<光聚合起始劑>> 本發明的感光性樹脂組成物中可以含有光聚合起始劑。光聚合起始劑係光自由基聚合起始劑為較佳。 作為能夠使用於本發明中的光自由基聚合起始劑,並無特別限制,能夠從公知的光自由基聚合起始劑中適當選擇。例如,對從紫外線區域至可見區域的光線具有感光性之光自由基聚合起始劑為較佳。又,可以為與光激發之增感劑產生一些作用,並生成活性自由基之活性劑。 光自由基聚合起始劑至少含有一種於約300~800nm(較佳為330~500nm)的範圍內至少具有約50莫耳吸光係數之化合物為較佳。化合物的莫耳吸光係數能夠利用公知的方法來進行測定。例如,藉由紫外可見分光光度計(Varian公司製Cary-5 spectrophotometer),並使用乙酸乙酯溶劑而於0.01g/L的濃度下進行測定為較佳。<<Photopolymerization Initiator>> The photosensitive resin composition of this invention may contain a photoinitiator. The photopolymerization initiator is preferably a photoradical polymerization initiator. The radical photopolymerization initiator that can be used in the present invention is not particularly limited, and can be appropriately selected from known radical photopolymerization initiators. For example, a photoradical polymerization initiator having photosensitivity to rays from an ultraviolet region to a visible region is preferable. Also, it can be an active agent that interacts with a photoexcited sensitizer to generate active free radicals. It is preferable that the photoradical polymerization initiator contains at least one compound having a molar absorption coefficient of at least about 50 in the range of about 300-800 nm (preferably 330-500 nm). The molar absorptivity of a compound can be measured by a known method. For example, it is preferable to perform measurement at a concentration of 0.01 g/L with an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian Co., Ltd.) using ethyl acetate solvent.

藉由本發明的感光性樹脂組成物包含光自由基聚合起始劑,將本發明的感光性樹脂組成物適用於半導體晶圓等基板而形成感光性樹脂組成物層之後,藉由照射光,發生因所產生之自由基引起之硬化,並能夠降低光照射部中的溶解性。因此,例如具有如下優點,亦即經由具有僅遮蔽電極部之圖案之光遮罩對感光性樹脂組成物層進行曝光,藉此依電極的圖案能夠簡單地製作溶解性不同之區域。Since the photosensitive resin composition of the present invention contains a photoradical polymerization initiator, after the photosensitive resin composition of the present invention is applied to a substrate such as a semiconductor wafer to form a photosensitive resin composition layer, by irradiating light, a Hardening due to the generated free radicals can reduce the solubility in the light-irradiated part. Therefore, for example, there is an advantage that, by exposing the photosensitive resin composition layer through a photomask having a pattern that shields only the electrode portion, regions having different solubility can be easily produced depending on the electrode pattern.

作為光自由基聚合起始劑,能夠任意使用公知的化合物,例如,可舉出鹵化烴衍生物(例如具有三𠯤骨架之化合物、具有㗁二唑骨架之化合物、具有三鹵甲基之化合物等)、醯基氧化膦等醯基膦化合物、六芳基雙咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮化合物、茂金屬化合物、有機硼化合物、鐵芳烴錯合物等。關於該等的詳細內容,能夠參閱日本特開2016-027357號公報的0165~0182段的記載,並將該內容編入本說明書中。As the photoradical polymerization initiator, known compounds can be used arbitrarily, for example, halogenated hydrocarbon derivatives (such as compounds having a triazole skeleton, compounds having a oxadiazole skeleton, compounds having a trihalomethyl group, etc. ), acyl phosphine compounds such as acyl phosphine oxide, hexaarylbiimidazole, oxime derivatives and other oxime compounds, organic peroxides, sulfur compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone Compounds, hydroxyacetophenone, azo compounds, azide compounds, metallocene compounds, organoboron compounds, iron arene complexes, etc. For such details, the description in paragraphs 0165 to 0182 of JP-A-2016-027357 can be referred to, and the content is incorporated into this specification.

作為酮化合物,例如,可例示日本特開2015-087611號公報的0087段中所記載之化合物,並將該內容編入本說明書中。市售品中,還可較佳地使用KAYACURE DETX(Nippon Kayaku Co.,Ltd.製)。As the ketone compound, for example, compounds described in paragraph 0087 of JP-A-2015-087611 can be exemplified, and the content thereof is incorporated in the present specification. Among commercially available products, KAYACURE DETX (manufactured by Nippon Kayaku Co., Ltd.) can also be preferably used.

作為光自由基聚合起始劑,還能夠較佳地使用羥基苯乙酮化合物、胺基苯乙酮化合物及醯基膦化合物。更具體而言,例如,還能夠使用日本特開平10-291969號公報中所記載之胺基苯乙酮系起始劑、日本專利第4225898號中所記載之醯基氧化膦系起始劑。 作為羥基苯乙酮系起始劑,能夠使用IRGACURE 184(IRGACURE為註冊商標)、DAROCUR 1173、IRGACURE 500、IRGACURE-2959、IRGACURE 127(產品名:均為BASF公司製)。 作為胺基苯乙酮系起始劑,能夠使用作為市售品之IRGACURE 907、IRGACURE 369及IRGACURE 379(商品名:均為BASF公司製)。 作為胺基苯乙酮系起始劑,還能夠使用極大吸收波長與365nm或405nm等波長光源匹配之日本特開2009-191179號公報中所記載之化合物。 作為醯基膦系起始劑,可舉出2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。又,能夠使用作為市售品之IRGACURE-819或IRGACURE-TPO(商品名:均為BASF公司製)。 作為茂金屬化合物,例示IRGACURE-784(BASF公司製)等。As the photoradical polymerization initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and an acylphosphine compound can also be preferably used. More specifically, for example, an aminoacetophenone-based initiator described in JP-A-10-291969 and an acylphosphine oxide-based initiator described in JP-A-4225898 can also be used. As the hydroxyacetophenone-based initiator, IRGACURE 184 (IRGACURE is a registered trademark), DAROCURE 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (product names: all are manufactured by BASF Corporation) can be used. As the aminoacetophenone-based initiator, commercially available IRGACURE 907, IRGACURE 369, and IRGACURE 379 (trade names: all are manufactured by BASF Corporation) can be used. As the aminoacetophenone-based initiator, compounds described in Japanese Patent Application Laid-Open No. 2009-191179 whose maximum absorption wavelength matches a light source with a wavelength of 365 nm or 405 nm can also be used. Examples of the acylphosphine-based initiator include 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide and the like. Moreover, commercially available IRGACURE-819 or IRGACURE-TPO (trade name: both are made by BASF Corporation) can be used. As a metallocene compound, IRGACURE-784 (manufactured by BASF Corporation) etc. are illustrated.

作為光自由基聚合起始劑,更佳為舉出肟化合物。藉由使用肟化合物,能夠進一步有效地提高曝光寬容度。肟化合物中,曝光寬容度(曝光餘量)較廣,且還作為光硬化促進劑而發揮功能,因此為特佳。 作為肟化合物的具體例,能夠使用日本特開2001-233842號公報中所記載之化合物、日本特開2000-80068號公報中所記載之化合物、日本特開2006-342166號公報中所記載之化合物。 作為較佳的肟化合物,例如可舉出下述結構的化合物、3-苯甲醯氧基亞胺基丁烷-2-酮、3-乙醯氧基亞胺基丁烷-2-酮、3-丙醯氧基亞胺基丁烷-2-酮、2-乙醯氧基亞胺基戊烷-3-酮、2-乙醯氧基亞胺基-1-苯基丙烷-1-酮、2-苯甲醯氧基亞胺基-1-苯基丙烷-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁烷-2-酮以及2-乙氧基羰氧基亞胺基-1-苯基丙烷-1-酮等。本發明的感光性樹脂組成物中,尤其作為光自由基聚合起始劑而使用肟化合物(肟系光聚合起始劑)為較佳。肟系光聚合起始劑於分子內具有>C=N-O-C(=O)-的連接基。 [化學式21]

Figure 02_image041
市售品中,還可較佳地使用IRGACURE OXE 01、IRGACURE OXE 02、IRGACURE OXE 03、IRGACURE OXE 04(以上為BASF公司製)、ADEKA OPTOMER N-1919(ADEKA CORPORATION製、日本特開2012-14052號公報中所記載之光自由基聚合起始劑2)。又,能夠使用TR-PBG-304(常州強力電子新材料有限公司製)、ADEKAARKLS NCI-831及ADEKAARKLS NCI-930(ADEKA CORPORATION製)。又,能夠使用DFI-091(DAITO CHEMIX Co.,Ltd.製)。 進而,還能夠使用具有氟原子之肟化合物。作為該等肟化合物的具體例,可舉出日本特開2010-262028號公報中所記載之化合物、日本特表2014-500852號公報的0345段中所記載之化合物24、36~40、日本特開2013-164471號公報的0101段中所記載之化合物(C-3)等。 作為最佳之肟化合物,可舉出日本特開2007-269779號公報中所示出之具有特定取代基之肟化合物或日本特開2009-191061號公報中所示出之具有硫芳基之肟化合物等。More preferably, an oxime compound is mentioned as a photoradical polymerization initiator. By using an oxime compound, exposure latitude can be improved more effectively. Among the oxime compounds, since the exposure latitude (exposure margin) is wide and also functions as a photocuring accelerator, it is particularly preferable. As specific examples of oxime compounds, compounds described in JP-A-2001-233842, compounds described in JP-A-2000-80068, and compounds described in JP-A-2006-342166 can be used. . As preferred oxime compounds, for example, compounds of the following structures, 3-benzoyloxyiminobutan-2-one, 3-acetyloxyiminobutan-2-one, 3-Propionyloxyiminobutan-2-one, 2-Acetyloxyiminopentan-3-one, 2-Acetyloxyimino-1-phenylpropane-1- Ketones, 2-benzoyloxyimino-1-phenylpropan-1-one, 3-(4-tosyloxy)iminobutan-2-one, and 2-ethoxycarbonyl Oxyimino-1-phenylpropan-1-one, etc. In the photosensitive resin composition of the present invention, it is preferable to use an oxime compound (oxime-based photopolymerization initiator) as a photoradical polymerization initiator. The oxime-based photopolymerization initiator has a >C=NOC(=O)- linking group in the molecule. [chemical formula 21]
Figure 02_image041
Among commercially available products, IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, IRGACURE OXE 04 (the above are manufactured by BASF Corporation), ADEKA OPTOMER N-1919 (manufactured by ADEKA CORPORATION, JP 2012-14052 Photoradical polymerization initiator 2) described in the No. In addition, TR-PBG-304 (manufactured by Changzhou Qiangli Electronic New Material Co., Ltd.), ADEKAARKLS NCI-831, and ADEKAARKLS NCI-930 (manufactured by ADEKA CORPORATION) can be used. Moreover, DFI-091 (made by DAITO CHEMIX Co., Ltd.) can be used. Furthermore, an oxime compound having a fluorine atom can also be used. Specific examples of such oxime compounds include compounds described in JP-A-2010-262028, compounds 24, 36-40 described in paragraph 0345 of JP-A-2014-500852, JP-A-2014-500852, Compound (C-3) and the like described in Paragraph 0101 of Publication No. 2013-164471. The most preferable oxime compounds include oxime compounds having specific substituents shown in JP-A-2007-269779 or oximes having a thioaryl group shown in JP-A-2009-191061 compound etc.

從曝光靈敏度的觀點考慮,光自由基聚合起始劑係選自包括三鹵甲基三𠯤化合物、苄基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、苯并噻唑化合物、二苯甲酮化合物、苯乙酮化合物及其衍生物、環戊二烯基-苯-鐵錯合物及其鹽、鹵甲基㗁二唑化合物、3-芳基取代香豆素化合物之群組中之化合物。 更佳的光自由基聚合起始劑係三鹵甲基三𠯤化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、二苯甲酮化合物、苯乙酮化合物,選自包括三鹵甲基三𠯤化合物、α-胺基酮化合物、肟化合物、三芳基咪唑二聚體、二苯甲酮化合物之群組中之至少一種化合物為進一步較佳,使用茂金屬化合物或肟化合物為更進一步較佳,肟化合物為更進一步較佳。 又,光自由基聚合起始劑還能夠使用二苯甲酮、N,N’-四甲基-4,4’-二胺基二苯甲酮(米蚩酮(Michler’s ketone))等N,N’-四烷基-4,4’-二胺基二苯甲酮,2-苄基-2-二甲基胺基-1-(4-口末啉基苯基)-丁酮-1,2-甲基-1-[4-(甲硫基)苯基]-2-口末啉基-丙酮-1等芳香族酮、烷基蒽醌等與芳香環進行縮環而成的醌類、安息香烷基醚等安息香醚化合物、安息香、烷基安息香等安息香化合物、苄基二甲基縮酮等苄基衍生物等。又,還能夠使用由下述式(I)表示之化合物。 [化學式22]

Figure 02_image043
式(I)中,RI00 係碳數1~20的烷基、藉由1個以上的氧原子而中斷之碳數2~20的烷基、碳數1~12的烷氧基、苯基、由碳數1~20的烷基、碳數1~12的烷氧基、鹵素原子、環戊基、環己基、碳數2~12的烯基藉由因1個以上的氧原子而中斷之碳數2~18的烷基及碳數1~4的烷基中的至少一個取代之苯基或聯苯基,RI01 係由式(II)表示之基團,或者係與RI00 相同的基團,RI02 ~RI04 各自獨立地係碳數1~12的烷基、碳數1~12的烷氧基或鹵素。 [化學式23]
Figure 02_image045
式中,RI05 ~RI07 與上述式(I)的RI02 ~RI04 相同。From the viewpoint of exposure sensitivity, photoradical polymerization initiators are selected from the group consisting of trihalomethyl tristannium compounds, benzyl dimethyl ketal compounds, α-hydroxy ketone compounds, α-amino ketone compounds, acyl Phosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triaryl imidazole dimers, onium salt compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds and their derivatives, cyclopentadienyl - Compounds in the group of benzene-iron complexes and salts thereof, halomethyl oxadiazole compounds, and 3-aryl substituted coumarin compounds. More preferable photoradical polymerization initiators are trihalomethyl trisalpine compounds, α-amino ketone compounds, acyl phosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triaryl imidazole dimers, onium Salt compounds, benzophenone compounds, and acetophenone compounds selected from the group consisting of trihalomethyl tristannium compounds, α-aminoketone compounds, oxime compounds, triaryl imidazole dimers, and benzophenone compounds It is further preferred to use at least one compound among them, it is further preferred to use a metallocene compound or an oxime compound, and it is further preferred to use an oxime compound. In addition, as the photoradical polymerization initiator, N, N'-tetraalkyl-4,4'-diaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-perolylphenyl)-butanone-1 ,2-methyl-1-[4-(methylthio)phenyl]-2-pornolinyl-acetone-1 and other aromatic ketones, alkylanthraquinones and other quinones formed by condensation with aromatic rings Benzoin ether compounds such as benzoin alkyl ethers, benzoin compounds such as benzoin and alkyl benzoin, benzyl derivatives such as benzyl dimethyl ketal, etc. Moreover, the compound represented by following formula (I) can also be used. [chemical formula 22]
Figure 02_image043
In formula (I), R I00 is an alkyl group with 1 to 20 carbon atoms, an alkyl group with 2 to 20 carbon atoms interrupted by one or more oxygen atoms, an alkoxy group with 1 to 12 carbon atoms, and a phenyl group , by alkyl with 1 to 20 carbons, alkoxy with 1 to 12 carbons, halogen atom, cyclopentyl, cyclohexyl, alkenyl with 2 to 12 carbons interrupted by one or more oxygen atoms A phenyl or biphenyl group substituted by at least one of an alkyl group with 2 to 18 carbons and an alkyl group with 1 to 4 carbons, R I01 is a group represented by formula (II), or is the same as R I00 R I02 to R I04 are each independently an alkyl group with 1 to 12 carbons, an alkoxy group with 1 to 12 carbons, or a halogen. [chemical formula 23]
Figure 02_image045
In the formula, R I05 to R I07 are the same as R I02 to R I04 in the above formula (I).

又,光自由基聚合起始劑還能夠使用國際公開WO2015/125469號的0048~0055段中所記載之化合物。In addition, as the photoradical polymerization initiator, compounds described in paragraphs 0048 to 0055 of International Publication WO2015/125469 can also be used.

當包含光聚合起始劑時,其含量相對於本發明的感光性樹脂組成物的總固體成分係0.1~30質量%為較佳,更佳為0.1~20質量%,進一步較佳為0.5~15質量%,更進一步較佳為1.0~10質量%。光聚合起始劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上的光聚合起始劑時,其合計係上述範圍為較佳。When a photopolymerization initiator is included, its content is preferably 0.1-30% by mass relative to the total solid content of the photosensitive resin composition of the present invention, more preferably 0.1-20% by mass, and even more preferably 0.5-20% by mass. 15% by mass, more preferably 1.0 to 10% by mass. A photoinitiator may contain only 1 type, and may contain 2 or more types. When two or more types of photopolymerization initiators are contained, it is preferable that the total is within the above-mentioned range.

<<光酸產生劑>> 本發明的組成物可以含有光酸產生劑。由於含有光酸產生劑,而於曝光部產生酸,且相對於曝光部的鹼水溶液的溶解性增大,因此能夠用作正型感光性樹脂組成物。 作為光酸產生劑,可舉出醌二疊氮化合物、鋶鹽、鏻鹽、重氮鹽、錪鹽等。其中,從可得到顯示優異的溶解抑制效果,高靈敏度且低薄膜化的正型組成物的方面考慮,可較佳地使用輥二疊氮化合物。又,亦可以含有兩種以上的光酸產生劑。藉此,能夠使曝光部與未曝光部的溶解速度之比變更大,並能夠得到高靈敏度的正型感光性樹脂組成物。 具體而言,能夠參閱WO2017/110982號公報的0209~0215段的記載,並將該等內容編入本說明書中。<<Photoacid generator>> The composition of the present invention may contain a photoacid generator. Since a photoacid generator is contained, an acid is generated in an exposed part, and the solubility with respect to the alkali aqueous solution of an exposed part increases, Therefore It can be used as a positive photosensitive resin composition. Examples of the photoacid generator include quinonediazide compounds, percite salts, phosphonium salts, diazonium salts, and iodonium salts. Among them, roll diazide compounds are preferably used from the viewpoint that a positive-type composition exhibiting an excellent dissolution inhibiting effect, high sensitivity, and low film reduction can be obtained. Moreover, you may contain 2 or more types of photoacid generators. Thereby, the ratio of the dissolution rate of an exposed part and an unexposed part can be made large, and the highly sensitive positive photosensitive resin composition can be obtained. Specifically, descriptions in paragraphs 0209 to 0215 of WO2017/110982 can be referred to, and these contents are incorporated into the present specification.

光酸產生劑的含量相對於聚合物前驅物100質量份,較佳為3~40質量份。藉由將光酸產生劑的含量設為該範圍,能夠實現更高的靈敏度。進而可以依需要而含有增感劑。 光酸產生劑可以僅使用一種,亦可以使用兩種以上。當使用兩種以上時,合計量成為上述範圍為較佳。The content of the photoacid generator is preferably 3 to 40 parts by mass relative to 100 parts by mass of the polymer precursor. Higher sensitivity can be realized by making content of a photoacid generator into this range. Furthermore, a sensitizer may be contained as needed. A photoacid generator may use only 1 type, and may use 2 or more types. When using 2 or more types, it is preferable that a total amount becomes the said range.

<<光硬化促進劑>> 本發明中所使用之感光性樹脂組成物可以包含光硬化促進劑。本發明中的光硬化促進劑為藉由曝光而產生鹼者,於常溫常壓的條件下不顯示活性,但作為外部刺激而進行電磁波的照射和加熱,則只要是產生鹼(鹼性物質)者則並無特別限定。藉由曝光而產生之鹼作為藉由對聚合物前驅物進行加熱而使其硬化時的觸媒而發揮作用,因此能夠較佳地使用。 本發明中,作為光硬化促進劑能夠使用公知者。例如,能夠舉出遷移金屬化合物錯合物、具有銨鹽等的結構者、如脒基部分藉由與羧酸形成鹽而被潛在化者那樣,鹼成分藉由形成鹽而被中和之離子性化合物、胺甲酸酯衍生物、肟酯衍生物、醯基化合物等藉由胺基甲酸酯鍵或肟鍵等而鹼成分被潛在化之非離子性化合物。<<Photohardening Accelerator>> The photosensitive resin composition used in the present invention may contain a photohardening accelerator. The photohardening accelerator in the present invention is one that generates a base by exposure, and does not show activity under normal temperature and pressure conditions, but as long as it generates a base (alkaline substance) when it is irradiated with electromagnetic waves and heated as an external stimulus are not particularly limited. The base generated by exposure functions as a catalyst when the polymer precursor is heated and hardened, so it can be preferably used. In this invention, a well-known thing can be used as a photocuring accelerator. For example, transition metal compound complexes, those having a structure such as an ammonium salt, those in which the amidine moiety is latent by forming a salt with a carboxylic acid, and ions in which the alkali component is neutralized by forming a salt Nonionic compounds in which the alkali component is latent through a urethane bond or an oxime bond, etc.

作為本發明之光硬化促進劑,例如可舉出如日本特開2009-080452號公報及國際公開第2009/123122號小冊子中揭示那樣具有肉桂酸醯胺結構之光硬化促進劑、如日本特開2006-189591號公報及日本特開2008-247747號公報中揭示那樣具有胺基甲酸酯結構之光硬化促進劑、如日本特開2007-249013號公報及日本特開2008-003581號公報中揭示那樣具有肟結構、胺基甲醯肟結構之光硬化促進劑等,但並不限定於這些,除此以外還能夠使用公知的光硬化促進劑的結構。As the photohardening accelerator of the present invention, for example, photohardening accelerators having a cinnamic acid amide structure as disclosed in JP-A-2009-080452 and International Publication No. 2009/123122, such as JP-A 2006-189591 A and JP 2008-247747 A photohardening accelerator having a urethane structure, as disclosed in JP 2007-249013 A and JP 2008-003581 A Such photocuring accelerators having an oxime structure and a carbamoxime structure, etc., are not limited to these, and other structures of known photocuring accelerators can be used.

此外,作為光硬化促進劑,作為例可舉出日本特開2012-093746號公報的0185~0188、0199~0200及0202段中所記載之化合物、日本特開2013-194205號公報的0022~0069段中所記載之化合物、日本特開2013-204019號公報的0026~0074段中所記載之化合物、以及國際公開WO2010/064631號公報的0052段中所記載之化合物。In addition, examples of photohardening accelerators include the compounds described in paragraphs 0185 to 0188, 0199 to 0200, and 0202 of JP-A-2012-093746, and compounds described in paragraphs 0022-0069 of JP-A-2013-194205. The compounds described in paragraphs, the compounds described in paragraphs 0026 to 0074 of JP-A-2013-204019, and the compounds described in paragraph 0052 of International Publication WO2010/064631.

作為光硬化促進劑的市售品,還能夠使用WPBG-266、WPBG-300、WPGB-345、WPGB-140、WPBG-165、WPBG-027、PBG-018、WPGB-015、WPBG-041、WPGB-172、WPGB-174、WPBG-166、WPGB-158、WPGB-025、WPGB-168、WPGB-167及WPBG-082(Wako Pure Chemical Industries,Ltd.製)。Commercially available photocuring accelerators include WPBG-266, WPBG-300, WPGB-345, WPGB-140, WPBG-165, WPBG-027, PBG-018, WPGB-015, WPBG-041, WPGB -172, WPGB-174, WPBG-166, WPGB-158, WPGB-025, WPGB-168, WPGB-167 and WPBG-082 (manufactured by Wako Pure Chemical Industries, Ltd.).

當使用光硬化促進劑時,組成物中的光硬化促進劑的含量相對於組成物的總固體成分係0.1~50質量%為較佳。下限係0.5質量%以上為更佳,1質量%以上為進一步較佳。上限係30質量%以下為更佳,20質量%以下為進一步較佳。 光硬化促進劑能夠使用一種或兩種以上。當使用兩種以上時,總量係上述範圍為較佳。When a photocuring accelerator is used, the content of the photocuring accelerator in the composition is preferably 0.1 to 50% by mass relative to the total solid content of the composition. The lower limit is more preferably 0.5% by mass or more, and more preferably 1% by mass or more. The upper limit is more preferably 30% by mass or less, and more preferably 20% by mass or less. One type or two or more types of photohardening accelerators can be used. When two or more kinds are used, it is preferable that the total amount is within the above-mentioned range.

<熱自由基聚合起始劑> 本發明的感光性樹脂組成物於不脫離本發明的宗旨之範圍內可以含有熱自由基聚合起始劑。 熱自由基聚合起始劑係藉由熱的能量而產生自由基,並開始或促進具有聚合性之化合物的聚合反應之化合物。藉由添加熱自由基聚合起始劑,能夠進行聚合物前驅物的環化,並且進行聚合物前驅物的聚合反應,因此能夠實現更高度的耐熱化。 作為熱自由基聚合起始劑,具體而言,可舉出日本特開2008-63554號公報的0074~0118段中所記載之化合物。<Thermal radical polymerization initiator> The photosensitive resin composition of this invention may contain a thermal radical polymerization initiator in the range which does not deviate from the summary of this invention. Thermal free radical polymerization initiators are compounds that generate free radicals by thermal energy and initiate or accelerate the polymerization reaction of polymerizable compounds. By adding a thermal radical polymerization initiator, the cyclization of the polymer precursor can proceed, and the polymerization reaction of the polymer precursor can proceed, so higher heat resistance can be realized. Specific examples of the thermal radical polymerization initiator include compounds described in paragraphs 0074 to 0118 of JP-A-2008-63554.

當含有熱自由基聚合起始劑時,其含量相對於本發明的感光性樹脂組成物的總固體成分係0.1~30質量%為較佳,更佳為0.1~20質量%,進一步較佳為5~15質量%。熱自由基聚合起始劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上的熱自由基聚合起始劑時,其合計係上述範圍為較佳。When a thermal radical polymerization initiator is contained, its content is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, and still more preferably 0.1 to 20% by mass relative to the total solid content of the photosensitive resin composition of the present invention. 5 to 15% by mass. A thermal radical polymerization initiator may contain only 1 type, and may contain 2 or more types. When two or more types of thermal radical polymerization initiators are contained, it is preferable that the total is within the above-mentioned range.

<重合性化合物> <<自由基聚合性化合物>> 本發明的感光性樹脂組成物包含自由基聚合性化合物為較佳。 自由基聚合性化合物能夠使用具有自由基聚合性基團之化合物。作為自由基聚合性基團,可舉出乙烯基苯基、乙烯基、(甲基)丙烯醯基及烯丙基等具有烯屬不飽和鍵之基團。自由基聚合性基團係(甲基)丙烯醯基為較佳。<Coincidental compounds> <<Radical polymerizable compound>> It is preferable that the photosensitive resin composition of this invention contains a radically polymerizable compound. As the radical polymerizable compound, a compound having a radical polymerizable group can be used. Examples of the radical polymerizable group include groups having an ethylenically unsaturated bond such as vinylphenyl, vinyl, (meth)acryl, and allyl. The radical polymerizable group is preferably a (meth)acryloyl group.

自由基聚合性化合物所具有之自由基聚合性基團的數量可以為1個,亦可以為2個以上,自由基聚合性化合物具有2個以上的自由基聚合性基團為較佳,具有3個以上為更佳。上限係15個以下為較佳,10個以下為更佳,8個以下為進一步較佳。The number of radical polymerizable groups that the radical polymerizable compound has can be 1 or more than 2. The radical polymerizable compound has more than 2 radical polymerizable groups. It is better to have 3 or more radical polymerizable groups. More than one is better. The upper limit is preferably 15 or less, more preferably 10 or less, and still more preferably 8 or less.

自由基聚合性化合物的分子量係2000以下為較佳,1500以下為更佳,900以下為進一步較佳。自由基聚合性化合物的分子量的下限係100以上為較佳。The molecular weight of the radically polymerizable compound is preferably 2000 or less, more preferably 1500 or less, and still more preferably 900 or less. The lower limit of the molecular weight of the radically polymerizable compound is preferably 100 or more.

從顯影性的觀點考慮,本發明的感光性樹脂組成物包含至少一種含有2個以上的聚合性基團之2官能以上的自由基聚合性化合物為較佳,包含至少一種3官能以上的自由基聚合性化合物為更佳。又,可以為2官能自由基聚合性化合物與3官能以上的自由基聚合性化合物的混合物。此外,自由基聚合性化合物的官能基數是指,1分子中的自由基聚合性基團的數量。From the viewpoint of developability, the photosensitive resin composition of the present invention preferably contains at least one bifunctional or higher radical polymerizable compound containing two or more polymerizable groups, and at least one trifunctional or higher radical polymerizable compound. A polymeric compound is more preferable. Moreover, it may be a mixture of a bifunctional radically polymerizable compound and a trifunctional or more radically polymerizable compound. In addition, the number of functional groups of a radical polymerizable compound means the number of radical polymerizable groups in 1 molecule.

作為自由基聚合性化合物的具體例, 可舉出不飽和羧酸(例如,丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、馬來酸等)或其酯類、醯胺類,較佳為不飽和羧酸與多元醇化合物的酯及不飽和羧酸與多元胺化合物的醯胺類。又,還可較佳地使用羥基、胺基、巰基等具有親和性取代基之不飽和羧酸酯或醯胺類與單官能或多官能異氰酸酯類或環氧類的加成反應物、與單官能或多官能的羧酸的脫水縮合反應物等。又,具有異氰酸酯基或環氧基等親電子性取代基之不飽和羧酸酯或醯胺類與單官能或多官能醇類、胺類、醇類的加成反應物及鹵素基或甲苯磺醯氧基等具有脫離性取代基之不飽和羧酸酯或醯胺類與單官能或多官能醇類、胺類、醇類的取代反應物亦為較佳。又,作為另一例,替代上述不飽和羧酸,能夠使用被不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯醚、烯丙醚等取代之化合物組。作為具體例,能夠參閱日本特開2016-027357號公報的0113~0122段的記載,並將該等內容編入本說明書中。Specific examples of radically polymerizable compounds include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or their esters, amides , preferably esters of unsaturated carboxylic acids and polyhydric alcohol compounds and amides of unsaturated carboxylic acids and polyamine compounds. Also, it is also preferable to use unsaturated carboxylic acid esters or amides having affinity substituents such as hydroxyl groups, amino groups, mercapto groups, and monofunctional or polyfunctional isocyanates or epoxy. Dehydration condensation reaction products of functional or polyfunctional carboxylic acids, etc. Also, addition reaction products of unsaturated carboxylates or amides with electrophilic substituents such as isocyanate groups or epoxy groups and monofunctional or polyfunctional alcohols, amines, alcohols, and halogen groups or toluenesulfonate Substitution reaction products of unsaturated carboxylic acid esters or amides with detachable substituents such as acyloxy groups and monofunctional or polyfunctional alcohols, amines, and alcohols are also preferred. Also, as another example, instead of the above-mentioned unsaturated carboxylic acid, a compound group substituted with unsaturated phosphonic acid, vinylbenzene derivatives such as styrene, vinyl ether, allyl ether, and the like can be used. As a specific example, the description in paragraphs 0113 to 0122 of JP-A-2016-027357 can be referred to, and these contents are incorporated into this specification.

又,自由基聚合性化合物於常壓下具有100℃以上的沸點的化合物亦較佳。作為其例,能夠舉出聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇五(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化之化合物、日本特公昭48-041708號公報、日本特公昭50-006034號公報、日本特開昭51-037193號各公報中所記載之(甲基)丙烯酸胺基甲酸酯類、日本特開昭48-064183號公報、日本特公昭49-043191號公報、日本特公昭52-030490號公報中所記載之聚酯丙烯酸酯類,作為環氧樹脂與(甲基)丙烯酸的反應產物的環氧丙烯酸酯類等多官能的丙烯酸酯或甲基丙烯酸酯、以及該等的混合物。此外,日本特開2008-292970號公報的0254~0257段中所記載之化合物亦適宜。又,還能夠舉出使多官能羧酸與(甲基)丙烯酸縮水甘油酯等具有環狀醚基及乙烯性不飽和鍵之化合物進行反應而獲得的多官能(甲基)丙烯酸酯等。 又,作為除了上述以外的較佳的自由基聚合性化合物,還能夠使用日本特開2010-160418號公報、日本特開2010-129825號公報、日本專利第4364216號公報等中所記載之具有茀環,且具有2個以上的含有乙烯性不飽和鍵的基團的化合物或卡多(cardo)樹脂。 進而,作為其他例,還能夠舉出日本特公昭46-043946號公報、日本特公平1-040337號公報、日本特公平1-040336號公報中所記載之特定的不飽和化合物、日本特開平2-025493號公報中所記載之乙烯基膦酸系化合物等。又,還能夠使用日本特開昭61-022048號公報中所記載之包含全氟烷基的化合物。進而,還能夠使用“Journal of the Adhesion Society of Japan”vol.20、No.7、300頁~308頁(1984年)中作為光硬化性單體及寡聚物所介紹者。Moreover, it is also preferable that a radical polymerizable compound has a boiling point of 100 degreeC or more under normal pressure. Examples thereof include polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, neopentyl glycol tri (Meth)acrylate, Neopentylthritol tetra(meth)acrylate, Dineopentylthritol penta(meth)acrylate, Dineopentylthritol hexa(meth)acrylate, Hexylene glycol (meth)acrylate base) acrylate, trimethylolpropane tris(acryloxypropyl) ether, tris(acryloxyethyl) isocyanurate, glycerin or trimethylolethane, etc. in polyfunctional alcohols Compounds that undergo (meth)acrylation after adding ethylene oxide or propylene oxide, Japanese Patent Publication No. 48-041708, Japanese Patent Publication No. 50-006034, and Japanese Patent Application Publication No. 51-037193 (Meth)acrylic urethanes described in the gazette, Japanese Patent Application Publication No. 48-064183, Japanese Patent Publication No. 49-043191, polyester acrylic acid described in Japanese Patent Publication No. 52-030490 Esters, polyfunctional acrylates or methacrylates such as epoxy acrylates, which are reaction products of epoxy resins and (meth)acrylic acid, and mixtures thereof. In addition, compounds described in paragraphs 0254 to 0257 of JP-A-2008-292970 are also suitable. Moreover, the polyfunctional (meth)acrylate obtained by reacting polyfunctional carboxylic acid and the compound which has a cyclic ether group and an ethylenically unsaturated bond, such as glycidyl (meth)acrylate, etc. are mentioned. In addition, as preferred radically polymerizable compounds other than the above-mentioned ones, there can also be used those with fenugreek described in JP-A-2010-160418, JP-A-2010-129825, JP-A-4364216, etc. A compound or a cardo resin having two or more ethylenically unsaturated bond-containing groups. Furthermore, as other examples, specific unsaturated compounds described in Japanese Patent Publication No. 46-043946, Japanese Patent Publication No. 1-040337, Japanese Patent Publication No. 1-040336, Japanese Patent Laid-Open No. 2 -Vinylphosphonic acid-based compounds described in Publication No. 025493, etc. Also, compounds containing a perfluoroalkyl group described in JP-A-61-022048 can also be used. Furthermore, those introduced as photocurable monomers and oligomers in "Journal of the Adhesion Society of Japan" vol. 20, No. 7, pages 300 to 308 (1984) can also be used.

除了上述以外,還能夠較佳地使用日本特開2015-034964號公報的0048~0051段中所記載之化合物,並將該等內容編入本說明書中。In addition to the above, compounds described in paragraphs 0048 to 0051 of JP-A-2015-034964 can also be preferably used, and these contents are incorporated in this specification.

又,於日本特開平10-062986號公報中作為式(1)及式(2)且與其具體例一同記載之如下化合物還能用作自由基聚合性化合物,該化合物係於多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成的化合物。In addition, the following compounds described in Japanese Patent Application Laid-Open No. 10-062986 as formula (1) and formula (2) together with specific examples thereof can also be used as radical polymerizable compounds, which are added to polyfunctional alcohols. A compound obtained by (meth)acrylic esterification after forming ethylene oxide or propylene oxide.

進而,還能夠使用日本特開2015-187211號公報的0104~0131段中所記載之化合物來用作其他自由基聚合性化合物,並將該等內容編入本說明書中。Furthermore, the compounds described in paragraphs 0104 to 0131 of JP-A-2015-187211 can also be used as other radically polymerizable compounds, and these contents are incorporated in this specification.

作為自由基聚合性化合物,二新戊四醇三丙烯酸酯(作為市售品為KAYARAD D-330;Nippon Kayaku Co.,Ltd.製)、二新戊四醇四丙烯酸酯(作為市售品為KAYARAD D-320;Nippon Kayaku Co.,Ltd.製、A-TMMT:Shin-Nakamura Chemical Co.,Ltd.製)、二新戊四醇五(甲基)丙烯酸酯(作為市售品為KAYARAD D-310;Nippon Kayaku Co.,Ltd.製)、二新戊四醇六(甲基)丙烯酸酯(作為市售品為KAYARAD DPHA;Nippon Kayaku Co.,Ltd.製、A-DPH;Shin-Nakamura Chemical Co.,Ltd.製)及該等的(甲基)丙烯醯基經由乙二醇殘基或丙二醇殘基鍵結之結構為較佳。亦能夠使用該等的寡聚物類型。As a radically polymerizable compound, diperythritol triacrylate (as a commercial item, KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), diperythritol tetraacrylate (as a commercial item, KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd., A-TMMT: manufactured by Shin-Nakamura Chemical Co., Ltd.), diperythritol penta(meth)acrylate (the commercially available product is KAYARAD D -310; manufactured by Nippon Kayaku Co., Ltd.), diperythritol hexa(meth)acrylate (commercially available as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., A-DPH; Shin-Nakamura Chemical Co., Ltd.) and the structure in which (meth)acryloyl groups are bonded via ethylene glycol residues or propylene glycol residues is preferable. These oligomer types can also be used.

作為自由基聚合性化合物的市售品,例如可舉出Sartomer Company, Inc製的作為具有4個伸乙氧基鏈之4官能丙烯酸酯之SR-494、作為具有4個乙烯氧基鏈之2官能丙烯酸甲酯之Sartomer Company, Inc製SR-209、231、239、Nippon Kayaku Co.,Ltd.製的作為具有6個伸戊氧基鏈之6官能丙烯酸酯之DPCA-60、作為具有3個異伸丁氧基鏈之3官能丙烯酸酯之TPA-330、胺基甲酸酯寡聚物UAS-10、胺基甲酸酯寡聚物UAB-140(NIPPON PAPER INDUSTRIES CO.,LTD.製)、NK酯M-40G、NK酯4G、NK酯M-9300、NK酯A-9300、UA-7200(Shin-Nakamura Chemical Co.,Ltd製)、DPHA-40H(Nippon Kayaku Co.,Ltd.製)、UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(Kyoeisha chemical Co.,Ltd.製)、BLEMMER PME400(NOF CORPORATION.製)等。As a commercial product of the radically polymerizable compound, for example, SR-494 manufactured by Sartomer Company, Inc., which is a tetrafunctional acrylate having four ethoxylate chains, and SR-494, which is a tetrafunctional acrylate having four ethyleneoxy chains, Sartomer Company, Inc. SR-209, 231, 239 of functional methyl acrylate, DPCA-60 of Nippon Kayaku Co., Ltd. as a hexafunctional acrylate having 6 TPA-330, urethane oligomer UAS-10, urethane oligomer UAB-140 (manufactured by NIPPON PAPER INDUSTRIES CO.,LTD.) , NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd. ), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), BLEMMER PME400 (manufactured by NOF CORPORATION.), etc.

作為自由基聚合性化合物,如日本特公昭48-041708號公報、日本特開昭51-037193號公報、日本特公平2-032293號公報、日本特公平2-016765號公報中所記載之那樣的胺基甲酸酯丙烯酸酯類、日本特公昭58-049860號公報、日本特公昭56-017654號公報、日本特公昭62-039417號公報、日本特公昭62-039418號公報中所記載之具有環氧乙烷系骨架之胺基甲酸酯化合物類亦為較佳。進而,作為自由基聚合性化合物,還能夠使用日本特開昭63-277653號公報、日本特開昭63-260909號公報、日本特開平1-105238號公報中所記載之於分子內具有胺基結構或硫化物結構之化合物。As the radical polymerizable compound, as described in Japanese Patent Publication No. 48-041708, Japanese Patent Application Publication No. 51-037193, Japanese Patent Publication No. 2-032293, and Japanese Patent Publication No. 2-016765 Urethane acrylates, Japanese Patent Publication No. 58-049860, Japanese Patent Publication No. 56-017654, Japanese Patent Publication No. 62-039417, and Japanese Patent Publication No. 62-039418. Oxyethane-based urethane compounds are also preferred. Furthermore, as a radically polymerizable compound, compounds having an amino group in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-1-105238 can also be used. Compounds with structure or sulfide structure.

自由基聚合性化合物可以為具有羧基、磷酸基等酸基之自由基聚合性化合物。具有酸基之自由基聚合性化合物中,脂肪族多羥基化合物與不飽和羧酸的酯為較佳,使脂肪族多羥基化合物的未反應的羥基與非芳香族羧酸酐反應而具有酸基之自由基聚合性化合物為更佳。特佳為使脂肪族多羥基化合物的未反應的羥基與非芳香族羧酸酐反應而具有酸基之自由基聚合性化合物中,脂肪族多羥基化合物係新戊四醇和/或二新戊四醇之化合物。作為市售品,例如,作為TOAGOSEI CO.,Ltd.製多元酸改質丙烯酸類寡聚物,可舉出M-510、M-520等。 具有酸基之自由基聚合性化合物的較佳的酸值係0.1~40mgKOH/g,特佳為5~30mgKOH/g。自由基聚合性化合物的酸值只要在上述範圍內,則製造或操作性優異,進而顯影性優異。又,聚合性亦良好。The radically polymerizable compound may be a radically polymerizable compound having an acidic group such as a carboxyl group or a phosphoric acid group. Among radically polymerizable compounds having acid groups, esters of aliphatic polyhydroxy compounds and unsaturated carboxylic acids are preferred, which have acid groups by reacting unreacted hydroxyl groups of aliphatic polyhydroxy compounds with non-aromatic carboxylic anhydrides. A radically polymerizable compound is more preferable. Among the radically polymerizable compounds having an acid group by reacting the unreacted hydroxyl group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic acid anhydride, the aliphatic polyhydroxy compound is neopentyl glycol and/or dipentyl glycol. compound. As a commercial item, M-510, M-520, etc. are mentioned, for example as TOAGOSEI CO., Ltd. polyacid-modified acrylic oligomer. The preferable acid value of the radically polymerizable compound which has an acid group is 0.1-40 mgKOH/g, especially preferably 5-30 mgKOH/g. If the acid value of a radically polymerizable compound exists in the said range, it will be excellent in manufacture and handleability, and also will be excellent in developability. Moreover, polymerizability is also favorable.

從抑制伴隨硬化膜的彈性率控制的翹曲的觀點考慮,本發明的感光性樹脂組成物能夠較佳地使用單官能自由基聚合性化合物來作為自由基聚合性化合物。作為單官能自由基聚合性化合物,可較佳地使用正丁基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、2-羥乙基(甲基)丙烯酸酯、丁氧基乙基(甲基)丙烯酸酯、卡必醇(甲基)丙烯酸酯、環己基(甲基)丙烯酸酯、芐基(甲基)丙烯酸酯、苯氧基乙基(甲基)丙烯酸酯、N-羥甲基(甲基)丙烯醯胺、縮水甘油基(甲基)丙烯酸酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯等(甲基)丙烯酸衍生物、N-乙烯基吡咯啶酮、N-乙烯基己內醯胺等N-乙烯基化合物類、烯丙基縮水甘油醚、鄰苯二甲酸二烯丙酯、偏苯三酸三烯丙酯等烯丙基化合物類等。作為單官能自由基聚合性化合物,為了抑制曝光前的揮發,於常壓下具有100℃以上的沸點之化合物亦為較佳。In the photosensitive resin composition of the present invention, a monofunctional radical polymerizable compound can preferably be used as the radical polymerizable compound from the viewpoint of suppressing warpage accompanying elastic modulus control of the cured film. As the monofunctional radically polymerizable compound, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxy ethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, (Meth)acrylic acid such as N-methylol(meth)acrylamide, glycidyl(meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate Derivatives, N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam, allyl glycidyl ether, diallyl phthalate, triallyl trimellitate Allyl compounds such as esters, etc. As the monofunctional radical polymerizable compound, in order to suppress volatilization before exposure, a compound having a boiling point of 100° C. or higher under normal pressure is also preferable.

<<除了上述之自由基聚合性化合物以外的聚合性化合物>> 本發明的感光性樹脂組成物還能夠含有上述之自由基聚合性化合物以外的聚合性化合物。作為除了上述之自由基聚合性化合物以外的聚合性化合物,可舉出具有羥甲基、烷氧甲基或醯氧甲基之化合物;環氧化合物;氧雜環丁烷化合物;苯并㗁𠯤化合物。<<Polymerizable compounds other than the radically polymerizable compounds mentioned above>> The photosensitive resin composition of the present invention may contain polymerizable compounds other than the above-mentioned radically polymerizable compounds. Examples of polymerizable compounds other than the above-mentioned radically polymerizable compounds include compounds having a methylol, alkoxymethyl, or acyloxymethyl group; epoxy compounds; oxetane compounds; compound.

(具有羥甲基、烷氧甲基或醯氧甲基之化合物) 作為具有羥甲基、烷氧甲基或醯氧甲基之化合物,由下述式(AM1)、(AM4)或(AM5)表示之化合物為較佳。(compounds with hydroxymethyl, alkoxymethyl or acyloxymethyl) As the compound having a hydroxymethyl group, an alkoxymethyl group or an acyloxymethyl group, a compound represented by the following formula (AM1), (AM4) or (AM5) is preferable.

[化學式24]

Figure 02_image047
(式中,t表示1~20的整數,R104 表示碳數1~200的t價有機基團,R105 表示由-OR106 或-OCO-R107 表示之基團,R106 表示氫原子或碳數1~10的有機基團,R107 表示碳數1~10的有機基團。)[chemical formula 24]
Figure 02_image047
(In the formula, t represents an integer of 1 to 20, R 104 represents a t-valent organic group with a carbon number of 1 to 200, R 105 represents a group represented by -OR 106 or -OCO-R 107 , R 106 represents a hydrogen atom Or an organic group with 1 to 10 carbons, R 107 represents an organic group with 1 to 10 carbons.)

[化學式25]

Figure 02_image049
(式中,R404 表示碳數1~200的2價有機基團,R405 表示由-OR406 或-OCO-R407 表示之基團,R406 表示氫原子或碳數1~10的有機基團,R407 表示碳數1~10的有機基團。)[chemical formula 25]
Figure 02_image049
(In the formula, R 404 represents a divalent organic group with 1 to 200 carbons, R 405 represents a group represented by -OR 406 or -OCO-R 407 , R 406 represents a hydrogen atom or an organic group with 1 to 10 carbons group, R 407 represents an organic group with 1 to 10 carbons.)

[化學式26]

Figure 02_image051
(式中,u表示3~8的整數,R504 表示碳數1~200的u價有機基團,R505 表示由-OR506 或、-OCO-R507 表示之基團,R506 表示氫原子或碳數1~10的有機基團,R507 表示碳數1~10的有機基團。)[chemical formula 26]
Figure 02_image051
(In the formula, u represents an integer of 3 to 8, R 504 represents a u-valent organic group with 1 to 200 carbon atoms, R 505 represents a group represented by -OR 506 or -OCO-R 507 , R 506 represents hydrogen atom or an organic group with 1 to 10 carbons, R 507 represents an organic group with 1 to 10 carbons.)

作為由式(AM4)表示之化合物的具體例,可舉出46DMOC、46DMOEP(以上為商品名,ASAHI YUKIZAI CORPORATION製)、DML-MBPC、DML-MBOC、DML-OCHP、DML-PCHP、DML-PC、DML-PTBP、DML-34X、DML-EP、DML-POP、dimethylolBisOC-P、DML-PFP、DML-PSBP、DML-MTrisPC(以上為商品名,Honshu Chemical Industry Co.,Ltd.製)、NIKALAC MX-290(以上為商品名,Sanwa Chemical Co.,Ltd.製)、2,6-dimethoxymethyl-4-t-buthylphenol(2,6-二甲氧基甲基-4-第三丁基苯酚)、2,6-dimethoxymethyl-p-cresol(2,6-二甲氧基甲基-對甲酚)、2,6-diacethoxymethyl-p-cresol(2,6-二乙醯氧基甲基-對甲酚)等。Specific examples of the compound represented by the formula (AM4) include 46DMOC, 46DMOEP (the above are trade names, manufactured by ASAHI YUKIZAI CORPORATION), DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC , DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylolBisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC (the above are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), NIKALAC MX-290 (the above are trade names, manufactured by Sanwa Chemical Co., Ltd.), 2,6-dimethoxymethyl-4-t-butylphenol (2,6-dimethoxymethyl-4-t-butylphenol) , 2,6-dimethoxymethyl-p-cresol (2,6-dimethoxymethyl-p-cresol), 2,6-diacethoxymethyl-p-cresol (2,6-diacetoxymethyl-p-cresol cresol), etc.

又,作為由式(AM5)表示之化合物的具體例,可舉出TriML-P、TriML-35XL、TML-HQ、TML-BP、TML-pp-BPF、TML-BPA、TMOM-BP、HML-TPPHBA、HML-TPHAP、HMOM-TPPHBA、HMOM-TPHAP(以上為商品名,Honshu Chemical Industry Co.,Ltd.製)、TM-BIP-A(商品名,ASAHI YUKIZAI CORPORATION製)、NIKALAC MX-280、NIKALAC MX-270、NIKALAC MW-100LM(以上為商品名,Sanwa Chemical Co.,Ltd.製)。In addition, specific examples of the compound represented by the formula (AM5) include TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPA, TMOM-BP, HML- TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (the above are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), TM-BIP-A (trade name, manufactured by ASAHI YUKIZAI CORPORATION), NIKALAC MX-280, NIKALAC MX-270, NIKALAC MW-100LM (the above are trade names, manufactured by Sanwa Chemical Co., Ltd.).

(環氧化合物(具有環氧基之化合物)) 作為環氧化合物,係於一分子中具有兩個以上的環氧基之化合物為較佳。環氧基於200℃以下進行交聯反應,並且由於不會引起源自交聯之脫水反應而很難引起膜收縮。因此,藉由含有環氧化合物,可有效地抑制組成物的低溫硬化及翹曲。(epoxy compounds (compounds with epoxy groups)) The epoxy compound is preferably a compound having two or more epoxy groups in one molecule. Epoxy undergoes a cross-linking reaction at a temperature below 200°C, and since it does not cause a dehydration reaction derived from cross-linking, it is difficult to cause film shrinkage. Therefore, low-temperature hardening and warpage of the composition can be effectively suppressed by containing the epoxy compound.

環氧化合物含有聚環氧乙烷基為較佳。藉此,彈性率進一步降低,並且能夠抑制翹曲。聚環氧乙烷基是指,環氧乙烷的構成單元數為2以上,構成單元數係2~15為較佳。The epoxy compound preferably contains a polyethylene oxide group. Thereby, the modulus of elasticity is further lowered, and warpage can be suppressed. The polyethylene oxide group means that the number of constituent units of ethylene oxide is 2 or more, and the number of constituent units is preferably 2-15.

作為環氧化合物的例,能夠舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、丙二醇二縮水甘油醚等伸烷基二醇型環氧樹脂;聚丙二醇二縮水甘油醚等聚伸烷基二醇型環氧樹脂;聚甲基(縮水甘油氧基丙基)矽氧烷等含環氧基矽酮等,但並不限定於該等。具體而言,可舉出EPICLON(註冊商標)850-S、EPICLON(註冊商標)HP-4032、EPICLON(註冊商標)HP-7200、EPICLON(註冊商標)HP-820、EPICLON(註冊商標)HP-4700、EPICLON(註冊商標)EXA-4710、EPICLON(註冊商標)HP-4770、EPICLON(註冊商標)EXA-859CRP、EPICLON(註冊商標)EXA-1514、EPICLON(註冊商標)EXA-4880、EPICLON(註冊商標)EXA-4850-150、EPICLON(註冊商標)EXA-4850-1000、EPICLON(註冊商標)EXA-4816、EPICLON(註冊商標)EXA-4822(以上為商品名,DIC Corporation製)、RIKARESIN(註冊商標)BEO-60E(商品名,New Japan Chemical Co.,Ltd.製)、EP-4003S、EP-4000S(以上為商品名,ADEKA CORPORATION製)等。該等中,從抑制翹曲及耐熱性優異之方面考慮,含有聚環氧乙烷基之環氧樹脂為較佳。例如,EPICLON(註冊商標)EXA-4880、EPICLON(註冊商標)EXA-4822、RIKARESIN(註冊商標)BEO-60E含有聚環氧乙烷基,因此為較佳。Examples of epoxy compounds include alkylene glycol type epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and propylene glycol diglycidyl ether; Alkylene glycol-type epoxy resins; epoxy-containing silicones such as polymethyl(glycidoxypropyl) siloxane, etc., but not limited to them. Specifically, EPICLON (registered trademark) 850-S, EPICLON (registered trademark) HP-4032, EPICLON (registered trademark) HP-7200, EPICLON (registered trademark) HP-820, EPICLON (registered trademark) HP- 4700, EPICLON (registered trademark) EXA-4710, EPICLON (registered trademark) HP-4770, EPICLON (registered trademark) EXA-859CRP, EPICLON (registered trademark) EXA-1514, EPICLON (registered trademark) EXA-4880, EPICLON (registered trademark) Trademark) EXA-4850-150, EPICLON (registered trademark) EXA-4850-1000, EPICLON (registered trademark) EXA-4816, EPICLON (registered trademark) EXA-4822 (the above are trade names, manufactured by DIC Corporation), RIKARESIN (registered Trademark) BEO-60E (trade name, manufactured by New Japan Chemical Co., Ltd.), EP-4003S, EP-4000S (the above are trade names, manufactured by ADEKA CORPORATION), etc. Among these, the epoxy resin containing a polyethylene oxide group is preferable from the point which suppresses warpage and is excellent in heat resistance. For example, since EPICLON (registered trademark) EXA-4880, EPICLON (registered trademark) EXA-4822, and RIKARESIN (registered trademark) BEO-60E contain polyethylene oxide groups, they are preferable.

(氧雜環丁烷化合物(具有氧雜環丁基之化合物)) 作為氧雜環丁烷化合物,能夠舉出於一分子中具有兩個以上的氧雜環丁烷環之化合物、3-乙基-3-羥甲氧雜環丁烷、1,4-雙{[(3-乙基-3-氧雜環丁基)甲氧基]甲基}苯、3-乙基-3-(2-乙基己基甲基)氧雜環丁烷、1,4-苯二羧酸-雙[(3-乙基-3-氧雜環丁基)甲基]酯等。作為具體的例,能夠較佳地使用TOAGOSEI CO.,LTD.製ARON OXETANE系列(例如,OXT-121、OXT-221、OXT-191、OXT-223),該等可以單獨使用,或者可以混合兩種以上。(Oxetane compounds (compounds having an oxetanyl group)) Examples of oxetane compounds include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethoxetane, 1,4-bis{ [(3-Ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, 1,4- Benzene dicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester, etc. As a specific example, ARON OXETANE series (for example, OXT-121, OXT-221, OXT-191, OXT-223) manufactured by TOAGOSEI CO., LTD. can be preferably used, and these can be used alone or in combination. more than one species.

(苯并㗁𠯤化合物(具有聚苯并㗁唑基之化合物)) 苯并㗁𠯤化合物因源自開環加成反應之交聯反應而於硬化時不產生脫氣,進而減少熱收縮而抑制產生翹曲,因此為較佳。(Benzozoline compounds (compounds having a polybenzoxazolyl group)) The benzoyl compound is preferable because it does not generate outgassing during hardening due to the crosslinking reaction derived from the ring-opening addition reaction, thereby reducing heat shrinkage and suppressing warpage.

作為苯并㗁𠯤化合物的較佳的例,可舉出B-a型苯并㗁𠯤、B-m型苯并㗁𠯤(以上為商品名,Shikoku Chemicals Corporation製)、聚羥基苯乙烯樹脂的苯并㗁𠯤加成物、酚醛清漆型二氫苯并㗁𠯤化合物。該等可以單獨使用,或者可以混合兩種以上。Preferable examples of benzophenone compounds include B-a type benzophenone, B-m type benzophenone (the above are trade names, manufactured by Shikoku Chemicals Corporation), polyhydroxystyrene resin benzophenone Adducts, novolak-type dihydrobenzo㗁𠯤 compounds. These may be used alone, or two or more kinds may be mixed.

當含有聚合性化合物時,其含量相對於本發明的感光性樹脂組成物的總固體成分係大於0質量%且60質量%以下為較佳。下限係5質量%以上為更佳。上限係50質量%以下為更佳,30質量%以下為進一步較佳。 其他聚合性化合物可以單獨使用一種,亦可以混合使用兩種以上。當同時使用兩種以上時,其合計量成為上述範圍為較佳。When a polymeric compound is contained, its content is preferably more than 0 mass % and 60 mass % or less with respect to the total solid content of the photosensitive resin composition of this invention. The lower limit is more preferably 5 mass % or more. The upper limit is more preferably at most 50% by mass, and is still more preferably at most 30% by mass. Other polymerizable compounds may be used alone or in combination of two or more. When using 2 or more types simultaneously, it is preferable that the total amount becomes the said range.

<遷移抑制劑> 本發明的感光性樹脂組成物還包含遷移抑制劑為較佳。藉由包含遷移抑制劑,能夠有效地抑制源自金屬層(金屬配線)的金屬離子轉移到感光性樹脂組成物層內。 作為遷移抑制劑,並無特別限制,可舉出具有雜環(吡咯環、呋喃環、噻吩環、咪唑環、㗁唑環、噻唑環、吡唑環、異㗁唑環、異噻唑環、四唑環、吡啶環、噠𠯤環、嘧啶環、吡𠯤環、哌啶環、哌𠯤環、口末啉環、2H-吡喃環及6H-吡喃環、三𠯤環)之化合物、具有硫脲類及巰基之化合物、受阻酚系化合物、水楊酸衍生物系化合物、醯肼衍生物系化合物。尤其,能夠較佳地使用1,2,4-三唑、苯并三唑等三唑系化合物、1H-四唑、5-苯基四唑等四唑系化合物。<Migration Inhibitor> It is preferable that the photosensitive resin composition of the present invention further includes a migration inhibitor. By including the migration inhibitor, it is possible to effectively suppress migration of metal ions originating in the metal layer (metal wiring) into the photosensitive resin composition layer. The migration inhibitor is not particularly limited, and examples include heterocyclic rings (pyrrole ring, furan ring, thiophene ring, imidazole ring, azole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, Azole ring, pyridine ring, pyranyl ring, pyrimidine ring, pyranyl ring, piperidine ring, piperyl ring, portoline ring, 2H-pyran ring and 6H-pyran ring, tri-alpha ring) compounds, with Thiourea and mercapto compounds, hindered phenolic compounds, salicylic acid derivatives, hydrazide derivatives. In particular, triazole-based compounds such as 1,2,4-triazole and benzotriazole, and tetrazole-based compounds such as 1H-tetrazole and 5-phenyltetrazole can be preferably used.

又,亦能夠使用捕捉鹵素離子等陰離子之離子捕捉劑。In addition, an ion-trapping agent that traps anions such as halogen ions can also be used.

作為其他遷移抑制劑,能夠使用日本特開2013-015701號公報的0094段中所記載之防鏽劑、日本特開2009-283711號公報的0073~0076段中所記載之化合物、日本特開2011-059656號公報的0052段中所記載之化合物、日本特開2012-194520號公報的0114、0116段及0118段中所記載之化合物等。As other migration inhibitors, rust inhibitors described in paragraph 0094 of JP 2013-015701 A, compounds described in paragraphs 0073 to 0076 of JP 2009-283711 A, JP 2011 - Compounds described in paragraph 0052 of Japanese Patent Application Laid-Open No. 059656, compounds described in paragraphs 0114, 0116, and 0118 of Japanese Patent Application Laid-Open No. 2012-194520, and the like.

作為遷移抑制劑的具體例,可舉出下述化合物。 [化學式27]

Figure 02_image053
Specific examples of migration inhibitors include the following compounds. [chemical formula 27]
Figure 02_image053

當感光性樹脂組成物具有遷移抑制劑時,遷移抑制劑的含量相對於感光性樹脂組成物的總固體成分係0.01~5.0質量%為較佳,0.05~2.0質量%為更佳,0.1~1.0質量%為進一步較佳。 遷移抑制劑可以為僅一種,亦可以為兩種以上。當遷移抑制劑係兩種以上時,其合計係上述範圍為較佳。When the photosensitive resin composition has a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0% by mass, more preferably 0.05 to 2.0% by mass, and 0.1 to 1.0% relative to the total solid content of the photosensitive resin composition. Mass % is further more preferable. There may be only one kind of migration inhibitor, or two or more kinds thereof. When there are two or more kinds of migration inhibitors, it is preferable that the total is in the above range.

<聚合抑制劑> 本發明的感光性樹脂組成物包含聚合抑制劑為較佳。 作為聚合抑制劑,例如可較佳地使用對苯二酚、4-甲氧基苯酚、二-第三丁基-對甲酚、鄰苯三酚、對-第三丁基鄰苯二酚、1,4-苯醌、二苯基-對苯醌、4,4’-硫代雙(3-甲基-6-第三丁基苯酚)、2,2’-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥基胺鋁鹽、吩噻嗪、N-亞硝基二苯胺、N-苯基萘胺、伸乙基二胺四乙酸、1,2-環己二胺四乙酸、乙二醇醚二胺四乙酸、2,6-二-第三丁基-4-甲基苯酚、5-亞硝基-8-羥基喹啉、1-亞硝基-2-萘酚、2-亞硝基-1-萘酚、2-亞硝基-5-(N-乙基-N-磺基丙基胺)苯酚、N-亞硝基-N-(1-萘基)羥胺銨鹽、雙(4-羥基-3,5-第三丁基)苯基甲烷等。又,亦能夠使用日本特開2015-127817號公報的0060段中所記載之聚合抑制劑及國際公開WO2015/125469號的0031~0046段中所記載之化合物。 又,還能夠使用下述化合物(Me為甲基)。 [化學式28]

Figure 02_image055
當本發明的感光性樹脂組成物具有聚合抑制劑時,聚合抑制劑的含量相對於本發明的感光性樹脂組成物的總固體成分係0.01~5質量%為較佳,0.02~3質量%為更佳,0.05~2.5質量%為進一步較佳。 聚合抑制劑可以為僅一種,亦可以為兩種以上。當聚合抑制劑為兩種以上時,其合計為上述範圍為較佳。<Polymerization inhibitor> It is preferable that the photosensitive resin composition of this invention contains a polymerization inhibitor. As the polymerization inhibitor, for example, hydroquinone, 4-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, p-tert-butylcatechol, 1,4-benzoquinone, diphenyl-p-benzoquinone, 4,4'-thiobis(3-methyl-6-tert-butylphenol), 2,2'-methylenebis(4- Methyl-6-tert-butylphenol), N-nitroso-N-phenylhydroxylamine aluminum salt, phenothiazine, N-nitrosodiphenylamine, N-phenylnaphthylamine, ethylidene diphenylamine Amine tetraacetic acid, 1,2-cyclohexanediamine tetraacetic acid, ethylene glycol ether diamine tetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8-hydroxy Quinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamine)phenol, N -Nitroso-N-(1-naphthyl)hydroxylamine ammonium salt, bis(4-hydroxy-3,5-tert-butyl)phenylmethane, etc. In addition, the polymerization inhibitors described in paragraph 0060 of JP-A-2015-127817 and the compounds described in paragraphs 0031 to 0046 of International Publication WO2015/125469 can also be used. Moreover, the following compound (Me is a methyl group) can also be used. [chemical formula 28]
Figure 02_image055
When the photosensitive resin composition of the present invention has a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 5 mass % relative to the total solid content of the photosensitive resin composition of the present invention, and 0.02 to 3 mass % is More preferably, 0.05 to 2.5 mass % is still more preferable. The polymerization inhibitor may be used alone, or may be used in combination of two or more. When there are two or more kinds of polymerization inhibitors, it is preferable that the total thereof is within the above-mentioned range.

<金屬黏著性改良劑> 本發明的感光性樹脂組成物包含用於提高與使用於電極或配線等之金屬材料的密接性之金屬密接性改良劑為較佳。作為金屬密接性改良劑,可舉出矽烷偶聯劑等。<Metal Adhesion Improver> It is preferable that the photosensitive resin composition of this invention contains the metal adhesion improvement agent for improving the adhesion with the metal material used for an electrode, wiring, etc. As a metal adhesion improving agent, a silane coupling agent etc. are mentioned.

作為矽烷偶聯劑的例,可舉出日本特開2014-191002號公報的0062~0073段中所記載之化合物、國際公開WO2011/080992A1號的0063~0071段中所記載之化合物、日本特開2014-191252號公報的0060~0061段中所記載之化合物、日本特開2014-41264號公報的0045~0052段中所記載之化合物、國際公開WO2014/097594號的0055段中所記載之化合物。又,如日本特開2011-128358號公報的0050~0058段中所記載那樣使用不同的兩種以上的矽烷偶聯劑亦為較佳。又,矽烷偶聯劑使用下述化合物亦為較佳。以下式中,Et表示乙基。 [化學式29]

Figure 02_image057
Examples of silane coupling agents include compounds described in paragraphs 0062 to 0073 of JP-A-2014-191002, compounds described in paragraphs 0063-0071 of International Publication WO2011/080992A1, JP-A Compounds described in paragraphs 0060 to 0061 of Japanese Patent Application Laid-Open No. 2014-191252, compounds described in paragraphs 0045 to 0052 of Japanese Patent Application Laid-Open No. 2014-41264, and compounds described in paragraph 0055 of International Publication WO2014/097594. Moreover, it is also preferable to use different 2 or more types of silane coupling agents as described in paragraph 0050-0058 of Unexamined-Japanese-Patent No. 2011-128358. Moreover, it is also preferable to use the following compound as a silane coupling agent. In the following formulae, Et represents an ethyl group. [chemical formula 29]
Figure 02_image057

又,金屬密接性改良劑還能夠使用日本特開2014-186186號公報的0046~0049段中所記載之化合物、日本特開2013-072935號公報的0032~0043段中所記載之硫化物。In addition, as the metal adhesion improving agent, compounds described in paragraphs 0046 to 0049 of JP-A-2014-186186 and sulfides described in paragraphs 0032-0043 of JP-A-2013-072935 can also be used.

金屬密接性改良劑的含量相對於聚合物前驅物100質量份較佳為0.1~30質量份,更佳為0.5~15質量份的範圍,進一步較佳為0.5~5質量份的範圍。藉由設為上述下限值以上,硬化步驟後的硬化膜與金屬層的密接性變良好,藉由設為上述上限值以下,硬化步驟後的硬化膜的耐熱性、機械特性變良好。金屬密接性改良劑可以為僅一種,亦可以為兩種以上。當使用兩種以上時,其合計為上述範圍為較佳。The content of the metal adhesion improving agent is preferably in the range of 0.1 to 30 parts by mass, more preferably in the range of 0.5 to 15 parts by mass, and still more preferably in the range of 0.5 to 5 parts by mass relative to 100 parts by mass of the polymer precursor. The adhesiveness of the cured film after a curing process and a metal layer becomes favorable by making it more than the said lower limit, and the heat resistance of the cured film after a curing process, and a mechanical characteristic become favorable by being below the said upper limit. The metal adhesion improving agent may be used alone or may be used in combination of two or more. When using 2 or more types, it is preferable that the sum total is the said range.

<硬化促進劑> 本發明的感光性樹脂組成物可以包含硬化促進劑。硬化促進劑可以為熱硬化促進劑,亦可以為光硬化促進劑。本發明中的光硬化促進劑係藉由熱或曝光等而產生鹼者(鹼產生劑)為較佳。 <<熱硬化促進劑>> 熱硬化促進劑係四級銨陽離子與羧酸陰離子的鹽為較佳。該四級銨陽離子由下述式(Y1-1)~式(Y1-4)中的任一個表示之為較佳。 [化學式30]

Figure 02_image059
<Hardening accelerator> The photosensitive resin composition of this invention may contain a hardening accelerator. The hardening accelerator may be a thermal hardening accelerator or a light hardening accelerator. The photocuring accelerator in the present invention is preferably one that generates a base by heat or exposure (base generator). <<Thermal curing accelerator>> The thermal curing accelerator is preferably a salt of a quaternary ammonium cation and a carboxylic acid anion. The quaternary ammonium cation is preferably represented by any one of the following formulas (Y1-1) to (Y1-4). [chemical formula 30]
Figure 02_image059

RY1 表示nY 價(nY 為1~12的整數)的有機基團,nY 價烴基為較佳。作為烴基,可舉出包含烷烴之nY 價基團(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、包含烯烴之nY 價基團(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、包含芳香族烴之nY 價基團(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或該等的組合。RY1 係其中的芳香族烴基為較佳。於不損害本發明的效果之範圍內,RY1 可以具有前述取代基T。 RY2 ~RY5 分別獨立地表示氫原子或烴基(碳數1~36為較佳,1~24為更佳,1~12為進一步較佳),烷基(碳數1~36為較佳,1~24為更佳,1~23為進一步較佳)、烯基(碳數2~36為較佳,2~24為更佳,2~23為進一步較佳)、炔基(碳數1~36為較佳,1~24為更佳,1~23為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為較佳。該烷基、烯基、炔基可以為環狀,亦可以為鏈狀,當為鏈狀時,可以為直鏈狀,亦可以為支鏈狀。 RY6 為烷基(碳數1~36為較佳,2~24為更佳,4~18為進一步較佳)、烯基(碳數2~36為較佳,2~24為更佳,4~18為進一步較佳)、炔基(碳數2~36為較佳,2~24為更佳,4~18為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)。烷基、烯基、炔基可以為環狀,亦可以為鏈狀,當為鏈狀時,可以為直鏈狀,亦可以為支鏈狀。烷基、烯基、炔基、芳基中,可以於基團之間與母核的連接中夾有包含雜原子之連接基Lh。 nY 表示1~12的整數,1~6的整數為更佳,1~3的整數為進一步較佳。 nX 表示1~12的整數,1~6的整數為較佳,1~3的整數為進一步較佳。 RY2 ~RY6 各自的兩個以上可以相互鍵結而形成環。R Y1 represents an organic group with a valence of n Y (n Y is an integer of 1 to 12), preferably a hydrocarbon group with a valence of n Y. As the hydrocarbon group, n Y valent groups containing alkanes (1 to 12 carbons are preferred, 1 to 6 are more preferred, 1 to 3 are further preferred), n Y valent groups containing alkenes (carbons 2-12 is preferred, 2-6 is more preferred, 2-3 is further preferred), n Y -valent groups containing aromatic hydrocarbons (6-22 carbons are preferred, 6-18 are preferred , 6 to 10 are further preferred) or a combination thereof. R Y1 is preferably an aromatic hydrocarbon group. R Y1 may have the aforementioned substituent T within a range not impairing the effect of the present invention. R Y2 to R Y5 independently represent a hydrogen atom or a hydrocarbon group (preferably 1 to 36 carbons, more preferably 1 to 24, further preferably 1 to 12), alkyl (preferably 1 to 36 carbons) , 1 to 24 is more preferred, 1 to 23 is further preferred), alkenyl (2 to 36 carbons is preferred, 2 to 24 is more preferred, 2 to 23 is further preferred), alkynyl (carbon number 1-36 is preferable, 1-24 is more preferable, 1-23 is still more preferable), aryl group (6-22 is preferable, 6-18 is more preferable, 6-10 is still more preferable) is better. The alkyl, alkenyl and alkynyl groups may be cyclic or chain, and when chain, may be linear or branched. R Y6 is alkyl (preferably 1-36 carbons, more preferably 2-24, further preferably 4-18), alkenyl (preferably 2-36 carbons, more preferably 2-24, 4-18 is more preferred), alkynyl (2-36 carbons is preferred, 2-24 is more preferred, 4-18 is further preferred), aryl (6-22 carbons is preferred, 6 ~18 is more preferred, 6~10 is further preferred). An alkyl group, an alkenyl group, and an alkynyl group may be cyclic or chain, and when chain, may be linear or branched. In an alkyl group, an alkenyl group, an alkynyl group, and an aryl group, a linking group Lh containing a heteroatom may be interposed between groups and the core nucleus. n Y represents the integer of 1-12, the integer of 1-6 is more preferable, and the integer of 1-3 is still more preferable. n X represents the integer of 1-12, the integer of 1-6 is preferable, and the integer of 1-3 is more preferable. Two or more of each of R Y2 to R Y6 may be bonded to each other to form a ring.

RY7 ~RY16 為定義與RN 相同之基團。式(Y1-2)中,RY7 及RY8 係羧基烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳;羧基的數量係1~12為較佳,1~6為更佳,1~3為進一步較佳)為更佳。RY9 係芳香族基團為較佳,芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)為更佳。或者,係經芳香族基團取代之烷氧基羰基為更佳(烷氧基的碳數係1~12為較佳,1~6為更佳,1~3為進一步較佳、芳香族基團的碳數係6~22為較佳,6~18為更佳,6~14為進一步較佳)。式(Y1-3)中,RY11 及RY13 係氫原子為較佳。RY14 及RY15 可以組合兩個而成為=C(NRN 22 形式的取代基(=是指雙鍵且與氮原子鍵結)。式(Y1-4)中,RY13 係氫原子為較佳,RY10 、RY11 、RY12 、RY16 係烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳。此時,RY11 與RY16 、RY10 與RY12 鍵結而形成環且成為雙環化合物為較佳。具體而言,可舉出二氮雜雙環壬烯、二氮雜雙環十一碳烯。R Y7 to R Y16 are groups defined the same as R N . In the formula ( Y1-2 ), RY7 and RY8 are carboxyalkyl groups (preferably 1-12 carbons, more preferably 1-6, more preferably 1-3; the number of carboxyl groups is 1-12 Preferably, 1 to 6 are more preferred, 1 to 3 are still more preferred) are more preferred. R Y9 is preferably an aromatic group, more preferably an aryl group (preferably having 6-22 carbon atoms, more preferably having 6-18 carbon atoms, and further preferably having 6-10 carbon atoms). Alternatively, an alkoxycarbonyl group substituted by an aromatic group is more preferable (the carbon number of the alkoxy group is 1-12 is preferable, 1-6 is more preferable, 1-3 is further preferable, aromatic group The carbon number of the cluster is preferably 6-22, more preferably 6-18, and still more preferably 6-14). In the formula (Y1-3), R Y11 and R Y13 are preferably hydrogen atoms. Two of R Y14 and R Y15 may be combined to form a substituent of the form =C(NR N 2 ) 2 (= refers to a double bond and is bonded to a nitrogen atom). In the formula (Y1-4), RY13 is preferably a hydrogen atom, and RY10 , RY11 , RY12 , and RY16 are alkyl groups (preferably 1-12 carbons, more preferably 1-6, 1-6 3 is further preferred) is preferred. In this case, it is preferable that RY11 and RY16 and RY10 and RY12 are bonded to form a ring and form a bicyclic compound. Specifically, diazabicyclononene and diazabicycloundecene are mentioned.

本實施形態中,與上述式(Y1-1)、式(Y1-3)及式(Y1-4)的四級銨陽離子成對之羧酸陰離子由下述式(X1)表示之為較佳。 [化學式31]

Figure 02_image061
式(X1)中,EWG表示吸電子基。In this embodiment, the carboxylate anion paired with the quaternary ammonium cation of the above formula (Y1-1), formula (Y1-3) and formula (Y1-4) is preferably represented by the following formula (X1) . [chemical formula 31]
Figure 02_image061
In formula (X1), EWG represents an electron-withdrawing group.

本實施形態中吸電子基是指,哈密特取代基常數σm表示正的值者。其中,σm於都野雄甫總說、Journal of Synthetic Organic Chemistry, Japan第23卷第8號(1965)p.631-642中進行詳細說明。此外,本實施方式中的吸電子基並不限定於上述文獻中所記載之取代基。 作為σm表示正的值之取代基的例,例如可舉出CF3 基(σm=0.43)、CF3 CO基(σm=0.63)、HC≡C基(σm=0.21)、CH2 =CH基(σm=0.06)、Ac基(σm=0.38)、MeOCO基(σm=0.37)、MeCOCH=CH基(σm=0.21)、PhCO基(σm=0.34)、H2 NCOCH2 基(σm=0.06)等。此外,Me表示甲基,Ac表示乙醯基,Ph表示苯基(以下,相同)。The electron-withdrawing group in the present embodiment refers to a Hammett substituent constant σm showing a positive value. Among them, σm is described in detail in Mr. Tsuno Yuuo, Journal of Synthetic Organic Chemistry, Japan, Vol. 23, No. 8 (1965), p.631-642. In addition, the electron-withdrawing group in this embodiment is not limited to the substituents described in the above-mentioned documents. Examples of substituents in which σm represents a positive value include CF 3 group (σm=0.43), CF 3 CO group (σm=0.63), HC≡C group (σm=0.21), CH 2 =CH group (σm=0.06), Ac group (σm=0.38), MeOCO group (σm=0.37), MeCOCH=CH group (σm=0.21), PhCO group (σm=0.34), H 2 NCOCH 2 group (σm=0.06) Wait. In addition, Me represents a methyl group, Ac represents an acetyl group, and Ph represents a phenyl group (hereinafter, the same).

EWG係由下述式(EWG-1)~(EWG-6)表示之基團為較佳。 [化學式32]

Figure 02_image063
式(EWG-1)~(EWG-6)中,Rx1 ~Rx3 分別獨立地表示氫原子、烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、羥基或羧基。Ar表示芳香族基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)。當Rx1 ~Rx3 為烷基、烯基、芳基時,可以形成環,形成環時可以於取中途夾雜上述連接基L或上述具有雜原子之連接基Lh。於不損害本發明的效果之範圍內,該等烷基、烯基、芳基及Ar可以具有取代基T。其中,Ar尤其具有羧基(較佳為1~3個)為較佳。*表示鍵結位置。 Np表示1~6的整數,1~3的整數為較佳,1或2為更佳。EWG is preferably a group represented by the following formulas (EWG-1) to (EWG-6). [chemical formula 32]
Figure 02_image063
In the formulas (EWG-1) to (EWG-6), R x1 to R x3 independently represent a hydrogen atom and an alkyl group (preferably 1 to 12 carbons, more preferably 1 to 6, and furthermore 1 to 3 preferably), alkenyl (preferably 2-12 carbons, more preferably 2-6, further preferably 2-3), aryl (preferably 6-22 carbons, more preferably 6-18 , 6-10 are further preferred), hydroxyl or carboxyl. Ar represents an aromatic group (preferably having 6 to 22 carbon atoms, more preferably having 6 to 18 carbon atoms, and still more preferably having 6 to 10 carbon atoms). When R x1 to R x3 are alkyl groups, alkenyl groups, or aryl groups, a ring may be formed, and the above-mentioned linking group L or the above-mentioned linking group Lh having a heteroatom may be inserted in the middle of the ring. These alkyl groups, alkenyl groups, aryl groups, and Ar may have a substituent T within the range that does not impair the effects of the present invention. Among them, Ar particularly preferably has a carboxyl group (preferably 1 to 3). * Indicates bond position. Np represents an integer of 1-6, preferably an integer of 1-3, more preferably 1 or 2.

本發明中的熱硬化促進劑的分子量較佳為100以上且小於2000,更佳為200~1000。 作為本發明中的熱硬化促進劑的具體例,除了後述之實施例中所使用的化合物以外,例示WO2015/199219號公報中所記載之加熱至40℃以上時產生鹼之酸性化合物及pKa1為0~4且具有陰離子和銨陽離子之銨鹽,並將該等內容編入本說明書中。The molecular weight of the thermosetting accelerator in the present invention is preferably from 100 to less than 2000, more preferably from 200 to 1000. As specific examples of the thermosetting accelerator in the present invention, in addition to the compounds used in the examples described later, acidic compounds that generate a base when heated to 40°C or higher described in WO2015/199219 and pKa1 of 0 are exemplified. ~4 and ammonium salts having anions and ammonium cations, and these are incorporated into this specification.

當使用熱硬化促進劑時,組成物中的熱硬化促進劑的含量相對於組成物的總固體成分係0.01~50質量%為較佳。下限係0.05質量%以上為更佳,0.1質量%以上為進一步較佳。上限係10質量%以下為更佳,5質量%以下為進一步較佳。 熱硬化促進劑能夠使用一種或兩種以上。當使用兩種以上時,總量係上述範圍為較佳。又,本發明的組成物能夠設為實質上不包含熱硬化促進劑之構成。實質上不包含是指,相對於組成物的總固體成分,小於0.01質量%,小於0.005質量%為更佳。When a thermosetting accelerator is used, the content of the thermosetting accelerator in the composition is preferably 0.01 to 50% by mass relative to the total solid content of the composition. The lower limit is more preferably at least 0.05% by mass, and more preferably at least 0.1% by mass. The upper limit is more preferably at most 10% by mass, and more preferably at most 5% by mass. One type or two or more types of thermosetting accelerators can be used. When two or more kinds are used, it is preferable that the total amount is within the above-mentioned range. Moreover, the composition of this invention can be set as the structure which does not contain a thermosetting accelerator substantially. Substantially not containing means that it is less than 0.01% by mass, more preferably less than 0.005% by mass relative to the total solid content of the composition.

<其他添加劑> 本發明的感光性樹脂組成物在不損害本發明的效果之範圍內,能夠依需要對各種添加物,例如,增感色素、鏈轉移劑、界面活性劑、高級脂肪酸衍生物、無機粒子、硬化劑、硬化催化劑、填充劑、抗氧化劑、紫外線吸收劑、凝聚抑制劑等進行配合。對該等添加劑進行配合時,將其合計配合量設為組成物的固體成分的3質量%以下為較佳。<Other additives> The photosensitive resin composition of the present invention can be used for various additives, such as sensitizing pigments, chain transfer agents, surfactants, higher fatty acid derivatives, inorganic particles, hardeners, etc. Additives, hardening catalysts, fillers, antioxidants, UV absorbers, aggregation inhibitors, etc. When compounding these additives, it is preferable to set the total compounding amount to be 3% by mass or less of the solid content of the composition.

<<熱酸產生劑>> 本發明的感光性樹脂組成物可以含有熱酸產生劑。熱酸產生劑藉由加熱而產生酸,且促進聚合物前驅物的環化而進一步提高硬化膜的機械特性。關於熱酸產生劑,可舉出日本特開2013-167742號公報的0059段中所記載之化合物等。<<Thermal acid generator>> The photosensitive resin composition of the present invention may contain a thermal acid generator. The thermal acid generator generates acid by heating, and promotes the cyclization of the polymer precursor to further improve the mechanical properties of the cured film. Examples of thermal acid generators include compounds described in paragraph 0059 of JP-A-2013-167742, and the like.

熱酸產生劑的含量相對於聚合物前驅物100質量份係0.01質量份以上為較佳,0.1質量份以上為更佳。含有0.01質量份以上的熱酸產生劑,藉此促進交聯反應及聚合物前驅物的環化,因此能夠進一步提高硬化膜的機械特性及耐藥品性。又,從硬化膜的電絕緣性的觀點考慮,熱酸產生劑的含量係20質量份以下為較佳,15質量份以下為更佳,10質量份以下為進一步較佳。 熱酸產生劑可以僅使用一種,亦可以使用兩種以上。當使用兩種以上時,總量成為上述範圍為較佳。The content of the thermal acid generator is preferably 0.01 parts by mass or more with respect to 100 parts by mass of the polymer precursor, more preferably 0.1 parts by mass or more. When the thermal acid generator is contained in an amount of 0.01 parts by mass or more, the crosslinking reaction and the cyclization of the polymer precursor are promoted, so that the mechanical properties and chemical resistance of the cured film can be further improved. Moreover, from the viewpoint of the electrical insulation of a cured film, content of a thermal acid generator is preferably 20 parts by mass or less, More preferably, it is 15 parts by mass or less, More preferably, it is 10 parts by mass or less. As the thermal acid generator, only one kind may be used, or two or more kinds may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.

<<增感色素>> 本發明的感光性樹脂組成物可以含有增感色素。增感色素吸收特定的活性放射線而成為電子激發狀態。成為電子激發狀態之增感色素與熱硬化促進劑、熱自由基聚合起始劑、光自由基聚合起始劑等接觸,而產生電子轉移、能量轉移、發熱等作用。藉此,熱硬化促進劑、熱自由基聚合起始劑、光自由基聚合起始劑發生化學變化而分解,並生成自由基、酸或鹼。關於增感色素的詳細內容,能夠參閱日本特開2016-027357號公報的0161~0163段的記載,並將該內容編入本說明書中。<<Sensitizing pigment>> The photosensitive resin composition of the present invention may contain a sensitizing dye. The sensitizing dye absorbs specific active radiation and enters an electronically excited state. The sensitizing pigment in an electronically excited state is in contact with thermal hardening accelerators, thermal radical polymerization initiators, photoradical polymerization initiators, etc., to produce electron transfer, energy transfer, and heat generation. Thereby, the thermosetting accelerator, the thermal radical polymerization initiator, and the photoradical polymerization initiator are chemically changed and decomposed to generate radicals, acids, or bases. For details of the sensitizing dye, the description in paragraphs 0161 to 0163 of JP-A-2016-027357 can be referred to, and the content is incorporated in this specification.

當本發明的感光性樹脂組成物含有增感色素時,增感色素的含量相對於本發明的感光性樹脂組成物的總固體成分係0.01~20質量%為較佳,0.1~15質量%為更佳,0.5~10質量%為進一步較佳。增感色素可以單獨使用一種,亦可以同時使用兩種以上。When the photosensitive resin composition of the present invention contains a sensitizing dye, the content of the sensitizing dye is preferably 0.01 to 20% by mass relative to the total solid content of the photosensitive resin composition of the present invention, and 0.1 to 15% by mass is More preferably, 0.5-10 mass % is still more preferable. One kind of sensitizing pigment may be used alone, or two or more kinds may be used simultaneously.

<<鏈轉移劑>> 本發明的感光性樹脂組成物可以含有鏈轉移劑。鏈轉移劑例如於高分子詞典第三版(高分子學會(The Society of Polymer Science, Japan)編,2005年)683-684頁中被定義。作為鏈轉移劑,例如使用於分子內具有SH、PH、SiH及GeH之化合物組。該等向低活性自由基供給氫而生成自由基,或者經氧化之後,藉由去質子而可生成自由基。尤其,能夠較佳地使用硫醇化合物(例如,2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基聚苯并㗁唑類、3-巰基三唑類、5-巰基四唑類等)。<<Chain transfer agent>> The photosensitive resin composition of the present invention may contain a chain transfer agent. Chain transfer agents are defined, for example, in Polymer Dictionary 3rd Edition (ed. The Society of Polymer Science, Japan, 2005) pp. 683-684. As a chain transfer agent, for example, a compound group having SH, PH, SiH and GeH in the molecule is used. These can generate free radicals by donating hydrogen to low-activity free radicals, or can generate free radicals by deprotonation after oxidation. In particular, thiol compounds (for example, 2-mercaptobenzimidazoles, 2-mercaptobenzothiazoles, 2-mercaptopolybenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetra azoles, etc.).

當本發明的感光性樹脂組成物含有鏈轉移劑時,鏈轉移劑的含量相對於本發明的感光性樹脂組成物的總固體成分100質量份係0.01~20質量份為較佳,1~10質量份為更佳,1~5質量份為進一步較佳。鏈轉移劑可以為僅一種,亦可以為兩種以上。當鏈轉移劑為兩種以上時,其合計範圍係上述範圍為較佳。When the photosensitive resin composition of the present invention contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, 1 to 10 parts by mass relative to 100 parts by mass of the total solid content of the photosensitive resin composition of the present invention. It is more preferable that it is a mass part, and it is still more preferable that it is 1-5 mass parts. The chain transfer agent may be used alone, or may be used in combination of two or more. When there are two or more chain transfer agents, the total range is preferably the above range.

<<界面活性劑>> 從進一步提高塗佈性的觀點考慮,本發明的感光性樹脂組成物中可以添加各種界面活性劑。作為界面活性劑,能夠使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界面活性劑等各種界面活性劑。又,下述界面活性劑亦較佳。 [化學式33]

Figure 02_image065
<<surfactant>> Various surfactants can be added to the photosensitive resin composition of the present invention from the viewpoint of further improving coatability. As the surfactant, various surfactants such as fluorine-based surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and silicone-based surfactants can be used. Moreover, the following surfactants are also preferable. [chemical formula 33]
Figure 02_image065

當本發明的感光性樹脂組成物具有界面活性劑時,界面活性劑的含量相對於本發明的感光性樹脂組成物的總固體成分係0.001~2.0質量%為較佳,更佳為0.005~1.0質量%。界面活性劑可以為僅一種,亦可以為兩種以上。當界面活性劑為兩種以上時,其合計範圍係上述範圍為較佳。When the photosensitive resin composition of the present invention has a surfactant, the content of the surfactant is preferably 0.001 to 2.0% by mass, more preferably 0.005 to 1.0% by mass relative to the total solid content of the photosensitive resin composition of the present invention. quality%. Surfactants may be used alone or in combination of two or more. When there are two or more surfactants, the total range is preferably the above range.

<<高級脂肪酸衍生物>> 為了防止因氧引起之聚合抑制,本發明的感光性樹脂組成物中可以添加如二十二酸或二十二酸醯胺那樣的高級脂肪酸衍生物而於塗佈後的乾燥過程中局部存在於組成物的表面。 當本發明的感光性樹脂組成物含有高級脂肪酸衍生物時,高級脂肪酸衍生物的含量相對於本發明的感光性樹脂組成物的總固體成分係0.1~10質量%為較佳。高級脂肪酸衍生物可以為僅一種,亦可以為兩種以上。當高級脂肪酸衍生物為兩種以上時,其合計範圍係上述範圍為較佳。<<Higher fatty acid derivatives>> In order to prevent polymerization inhibition caused by oxygen, higher fatty acid derivatives such as behenic acid or behenic acid amide can be added to the photosensitive resin composition of the present invention to partially exist in the drying process after coating. the surface of the composition. When the photosensitive resin composition of the present invention contains a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably 0.1 to 10% by mass relative to the total solid content of the photosensitive resin composition of the present invention. The higher fatty acid derivative may be only one kind, or may be two or more kinds. When there are two or more higher fatty acid derivatives, the total range is preferably the above range.

<關於其他含有物質的限制> 從塗佈面狀的觀點考慮,本發明的感光性樹脂組成物的水分含量小於5質量%為較佳,小於1質量%為更佳,小於0.6質量%為進一步較佳。<Restrictions on other substances contained> From the viewpoint of coating surface shape, the water content of the photosensitive resin composition of the present invention is preferably less than 5% by mass, more preferably less than 1% by mass, and still more preferably less than 0.6% by mass.

從絕緣性的觀點考慮,本發明的感光性樹脂組成物的金屬含量小於5質量ppm(parts per million(百萬分率))為較佳,小於1質量ppm為更佳,小於0.5質量ppm為進一步較佳。作為金屬,可舉出鈉、鉀、鎂、鈣、鐵、鉻、鎳等。當包含複數種金屬時,該等金屬的合計為上述範圍為較佳。 又,作為減少意外包含於本發明的感光性樹脂組成物之金屬雜質之方法,能夠舉出作為構成本發明的感光性樹脂組成物之原料而選擇金屬含量較少的原料,對構成本發明的感光性樹脂組成物之原料進行濾波器過濾,用聚四氟乙烯對裝置內進行內襯而於盡可能抑制了污染之條件下進行蒸餾等方法。From the viewpoint of insulation, the metal content of the photosensitive resin composition of the present invention is preferably less than 5 mass ppm (parts per million (parts per million)), more preferably less than 1 mass ppm, and less than 0.5 mass ppm. Further better. Examples of the metal include sodium, potassium, magnesium, calcium, iron, chromium, nickel and the like. When a plurality of metals are contained, the total of these metals is preferably within the above-mentioned range. In addition, as a method for reducing the metal impurities unexpectedly contained in the photosensitive resin composition of the present invention, it is possible to select a raw material with a low metal content as a raw material constituting the photosensitive resin composition of the present invention, which is beneficial to the composition of the present invention. The raw material of the photosensitive resin composition is filtered through a filter, the interior of the device is lined with polytetrafluoroethylene, and distillation is carried out under conditions that suppress pollution as much as possible.

若考慮作為半導體材料的用途,且從配線腐蝕性的觀點考慮,本發明的感光性樹脂組成物中,鹵素原子的含量小於500質量ppm為較佳,小於300質量ppm為更佳,小於200質量ppm為進一步較佳。其中,以鹵素離子的狀態存在者係小於5質量ppm為較佳,小於1質量ppm為更佳,小於0.5質量ppm為進一步較佳。作為鹵素原子,可舉出氯原子及溴原子。氯原子及溴原子或氯離子及溴離子的合計分別為上述範圍為較佳。In consideration of the use as a semiconductor material and from the viewpoint of wiring corrosion, the content of halogen atoms in the photosensitive resin composition of the present invention is preferably less than 500 mass ppm, more preferably less than 300 mass ppm, and less than 200 mass ppm ppm is further preferred. Among them, those present in the state of halogen ions are preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and still more preferably less than 0.5 mass ppm. Examples of the halogen atom include a chlorine atom and a bromine atom. It is preferable that the total of chlorine atom and bromine atom or chlorine ion and bromide ion is in the above-mentioned range respectively.

作為本發明的感光性樹脂組成物的收納容器能夠使用以往公知的收納容器。又,作為收納容器,以抑制雜質混入原材料或組成物中為目的,使用由6種6層樹脂構成容器內壁之多層瓶、將6種樹脂形成為7層結構之瓶亦為較佳。作為該等容器,例如可舉出日本特開2015-123351號公報中所記載之容器。A conventionally known storage container can be used as a storage container of the photosensitive resin composition of this invention. Also, as a storage container, for the purpose of preventing impurities from mixing into raw materials or compositions, it is also preferable to use a multi-layer bottle whose inner wall is composed of 6 types of 6-layer resins, or a bottle with 6 types of resins formed into a 7-layer structure. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.

<組成物的製備> 本發明的感光性樹脂組成物能夠藉由將上述各成分進行混合而製備。混合方法並無特別限定,能夠藉由以往公知的方法來進行。 又,以去除組成物中的垃圾或微粒等異物為目的,進行使用過濾器之過濾為較佳。過濾器孔徑係1μm以下為較佳,0.5μm以下為更佳,0.1μm以下為進一步較佳。過濾器的材質係聚四氟乙烯、聚乙烯或尼龍為較佳。過濾器可以使用用有機溶劑預先清洗者。過濾器的過濾步驟中,可以並聯或串聯複數種過濾器而使用。當使用複數種過濾器時,可以組合使用孔徑或材質不同之過濾器。又,可以將各種材料過濾多次。當過濾多次時,可以為循環過濾。又,可以於加壓之後進行過濾。當於加壓之後進行過濾時,進行加壓之壓力係0.05MPa以上且0.3MPa以下為較佳。 除了使用過濾器之過濾以外,還可以進行使用了吸附材料之雜質去除處理。還可以組合過濾器過濾和使用了吸附材料之雜質去除處理。作為吸附材料,能夠使用公知的吸附材料。例如,可舉出矽膠、沸石等無機系吸附材料、活性碳等有機系吸附材料。<Preparation of composition> The photosensitive resin composition of the present invention can be prepared by mixing the above-mentioned components. The mixing method is not particularly limited, and it can be performed by a conventionally known method. In addition, for the purpose of removing foreign substances such as garbage and fine particles in the composition, it is preferable to perform filtration using a filter. The filter pore size is preferably 1 μm or less, more preferably 0.5 μm or less, and still more preferably 0.1 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene or nylon. Filters can be used pre-cleaned with organic solvents. In the filtration step of the filter, a plurality of types of filters can be used in parallel or in series. When multiple types of filters are used, filters with different pore diameters or materials can be used in combination. Also, various materials can be filtered multiple times. When filtering multiple times, it can be filtered for loops. In addition, filtration may be performed after pressurization. When filtering is performed after pressurization, it is preferable that the pressure for pressurization is 0.05 MPa or more and 0.3 MPa or less. In addition to filtration using a filter, impurity removal treatment using an adsorbent can also be performed. It is also possible to combine filter filtration and impurity removal treatment using an adsorbent. As the adsorbent, known adsorbents can be used. Examples thereof include inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon.

<硬化膜、積層體、半導體裝置及該等的製造方法> 接著,對硬化膜、積層體、半導體裝置及該等的製造方法進行說明。 本發明的硬化膜藉由使本發明的感光性樹脂組成物硬化而成。本發明的硬化膜的膜厚例如能夠設為0.5μm以上,且能夠設為1μm以上。又,作為上限值,能夠設為100μm以下,且還能夠設為30μm以下。<Cured films, laminates, semiconductor devices, and methods of manufacturing them> Next, the cured film, laminated body, semiconductor device, and their manufacturing methods will be described. The cured film of this invention is formed by hardening the photosensitive resin composition of this invention. The film thickness of the cured film of this invention can be 0.5 micrometer or more, for example, and can be 1 micrometer or more. Moreover, as an upper limit, it can be set to 100 micrometers or less, and can also be set to 30 micrometers or less.

可以將本發明的硬化膜積層2層以上,進而積層3~7層來作為積層體。具有2層以上的本發明的硬化膜之種積層體係於硬化膜之間具有金屬層之態樣為較佳。該等金屬層可較佳地用作再配線層等金屬配線。Two or more layers of the cured film of the present invention may be laminated, and further 3 to 7 layers may be laminated to form a laminate. It is preferable that the seed layer system having two or more layers of the cured film of the present invention has a metal layer between the cured films. These metal layers can be preferably used as metal wirings such as redistribution layers.

作為能夠適用本發明的硬化膜的領域,可舉出半導體裝置的絕緣膜、再配線層用層間絕緣膜、應力緩衝膜等。除此以外,可舉出密封薄膜、基板材料(撓性印刷電路板的基膜或蓋層、層間絕緣膜)或藉由蝕刻對如上述那樣的實際安裝用途的絕緣膜進行圖案形成之情況等。關於該等用途,例如,能夠參閱Science & Technology Co.,Ltd.“聚醯亞胺的高功能化和應用技術”2008年4月、柿本雅明/監修、CMC技術圖書館“聚醯亞胺材料的基礎和開發”2011年11月發行、日本聚醯亞胺・芳香族系高分子研究會/編“最新聚醯亞胺 基礎和應用”NTS,2010年8月等As the field to which the cured film of this invention can be applied, the insulating film of a semiconductor device, the interlayer insulating film for rewiring layers, a stress buffer film, etc. are mentioned. Other examples include sealing films, substrate materials (base film or cover layer of flexible printed circuit boards, interlayer insulating films), or cases where the above-mentioned insulating films for actual mounting are patterned by etching, etc. . For such uses, see, for example, Science & Technology Co., Ltd. "Highly Functional Polyimide and Application Technology", April 2008, Masami Kakimoto/Supervisor, CMC Technical Library "Polyimide Materials "Basic and Development of Polyimide" published in November 2011, Japan Polyimide and Aromatic Polymer Research Society/edited "Basic and Application of Latest Polyimide" NTS, August 2010, etc.

又,本發明中的硬化膜還能夠使用於膠印版面或網版版面等版面的製造、對成型部件的使用、電子、尤其微電子中的保護漆及介電層的製造等中。In addition, the cured film in the present invention can also be used in the manufacture of offset printing plates, screen plates, etc., the use of molded parts, and the production of protective varnishes and dielectric layers in electronics, especially microelectronics.

本發明的硬化膜的製造方法包括使用本發明的感光性樹脂組成物之情況。具體而言,包括將本發明的感光性樹脂組成物適用於基板而形成膜之膜形成步驟(形成為層狀之層形成步驟)和於80~450℃下對形成為層狀之感光性樹脂組成物進行加熱之加熱步驟。較佳為可舉出如下製造方法,即硬化膜的製造方法具有於上述膜形成步驟(層形成步驟)之後,對膜進行曝光之曝光步驟和對上述經曝光之感光性樹脂組成物層(膜、亦即樹脂層)進行顯影處理之顯影處理步驟。該顯影之後能夠進而使,藉由加熱(較佳為於80~450℃下加熱)而曝光之樹脂層硬化。此外,如上所述,當使用感光性樹脂組成物時,能夠預先藉由曝光使組成物硬化,之後依需要實施所希望的加工(例如下述積層),進而藉由加熱而使其硬化。The manufacturing method of the cured film of this invention includes the case where the photosensitive resin composition of this invention is used. Specifically, it includes a film forming step of applying the photosensitive resin composition of the present invention to a substrate to form a film (layer forming step) and treating the layered photosensitive resin at 80 to 450°C. A heating step in which the composition is heated. Preferably, the production method of the cured film includes an exposure step of exposing the film after the above-mentioned film forming step (layer forming step) and exposing the above-mentioned exposed photosensitive resin composition layer (film forming step). , that is, the resin layer) is a development treatment step for development treatment. After the development, the resin layer exposed by heating (preferably heating at 80 to 450° C.) can be further cured. In addition, as described above, when using a photosensitive resin composition, the composition can be cured by exposure in advance, and then desired processing (such as lamination described below) can be performed as needed, and then cured by heating.

本發明的積層體的製造方法包括本發明的硬化膜的製造方法。本發明的積層體的製造方法按照上述硬化膜的製造方法,於形成硬化膜之後,進而再次依次進行感光性樹脂組成物的膜形成步驟(層形成步驟)及加熱步驟或賦予了感光性的情況下依次進行膜形成步驟(層形成步驟)、曝光步驟及顯影處理步驟(依需要進而進行加熱步驟)為較佳。尤其,依次將上述各步驟進行複數次、例如2~5次(亦即,合計3~6次)為較佳。藉由如此對硬化膜進行積層,能夠形成積層體。本發明中尤其於設置有硬化膜之部分上側或硬化膜之間或該兩者中設置金屬層為較佳。 以下,對該等進行詳細說明。The manufacturing method of the laminated body of this invention includes the manufacturing method of the cured film of this invention. In the method for producing a laminate of the present invention, according to the above-mentioned method for producing a cured film, after forming the cured film, the film forming step (layer forming step) and the heating step of the photosensitive resin composition are sequentially performed again, or photosensitivity is imparted It is preferable to perform a film forming step (layer forming step), an exposure step, and a development treatment step (if necessary, a heating step) in this order. In particular, it is preferable to sequentially perform each of the above steps a plurality of times, for example, 2 to 5 times (that is, 3 to 6 times in total). A laminated body can be formed by laminating a cured film in this way. In the present invention, it is preferable to provide a metal layer on the upper side of the part where the cured film is provided, or between the cured films, or both. These will be described in detail below.

<<膜形成步驟(層形成步驟)>> 本發明的較佳的實施形態之製造方法包括將感光性樹脂組成物適用於基板而形成膜(層狀)之膜形成步驟(層形成步驟)。 基板的種類能夠依用途而適當設定,但並無特別限制,可舉出矽、氮化矽、多晶矽、氧化矽、非晶矽等半導體製作基板、石英、玻璃、光學膜、陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、紙、SOG(Spin On Glass)、TFT(薄膜晶體管)陣列基板、等離子顯示面板(PDP)的電極板等。本發明中,尤其半導體製作基板為較佳,矽基板為更佳。 又,當於樹脂層的表面或金屬層的表面形成感光性樹脂組成物層時,樹脂層或金屬層成為基板。 作為將感光性樹脂組成物適用於基板之方法,塗佈為較佳。 具體而言,作為適用方法,可例示浸塗法、氣刀塗佈法、簾式塗佈法、線棒塗佈法、凹版塗佈法、擠壓塗佈法、噴塗法、旋塗法、狹縫塗佈法及噴墨法等。從感光性樹脂組成物層的厚度的均勻性的觀點考慮,更佳為旋塗法、狹縫塗佈法、噴塗法、噴墨法。依方法調整適當的固體成分濃度或塗佈條件,藉此能夠得到所希望的厚度的樹脂層。又,能夠依基板的形狀適當選擇塗佈方法,只要為晶圓等圓形基板,則旋塗法或噴塗法、噴墨法等為較佳,且只要為矩形基板,則狹縫塗佈法或噴塗法、噴墨法等為較佳。當為旋塗法時,例如能夠以500~2000rpm的轉速適用10秒鐘~1分鐘左右。<<Film formation step (layer formation step)>> The production method according to a preferred embodiment of the present invention includes a film forming step (layer forming step) of applying a photosensitive resin composition to a substrate to form a film (layer form). The type of substrate can be appropriately set according to the application, but it is not particularly limited. Examples include substrates made of semiconductors such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, and vapor-deposited films. , magnetic film, reflective film, metal substrates such as Ni, Cu, Cr, Fe, etc., paper, SOG (Spin On Glass), TFT (Thin Film Transistor) array substrate, electrode plate of plasma display panel (PDP), etc. In the present invention, especially semiconductor substrates are preferred, and silicon substrates are more preferred. Moreover, when forming a photosensitive resin composition layer on the surface of a resin layer or the surface of a metal layer, a resin layer or a metal layer becomes a board|substrate. Coating is preferable as a method of applying the photosensitive resin composition to a substrate. Specifically, examples of applicable methods include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, Slit coating method and inkjet method, etc. From the viewpoint of the uniformity of the thickness of the photosensitive resin composition layer, a spin coating method, a slit coating method, a spray coating method, and an inkjet method are more preferable. A resin layer with a desired thickness can be obtained by adjusting the appropriate solid content concentration or coating conditions according to the method. In addition, the coating method can be appropriately selected according to the shape of the substrate. As long as it is a circular substrate such as a wafer, the spin coating method, spray coating method, inkjet method, etc. are preferred, and as long as it is a rectangular substrate, the slit coating method is suitable. Or a spraying method, an inkjet method, etc. are preferable. In the case of spin coating, for example, it can be applied at a rotation speed of 500 to 2000 rpm for about 10 seconds to 1 minute.

<<乾燥步驟>> 本發明的製造方法還可以包括於形成感光性樹脂組成物層之後,且膜形成佈置(層形成佈置)之後,為了去除溶劑而進行乾燥之步驟。較佳的乾燥溫度係50~150℃,70~130℃為更佳,90~110℃為進一步較佳。作為乾燥時間,例示30秒鐘~20分鐘,1分鐘~10分鐘為較佳,3分鐘~7分鐘為更佳。<<Drying Step>> The production method of the present invention may further include a step of drying to remove the solvent after forming the photosensitive resin composition layer and after the film formation arrangement (layer formation arrangement). The preferred drying temperature is 50-150°C, more preferably 70-130°C, and more preferably 90-110°C. As drying time, 30 seconds - 20 minutes are illustrated, Preferably it is 1 minute - 10 minutes, More preferably, it is 3 minutes - 7 minutes.

<<曝光步驟>> 本發明的製造方法可以包括曝光步驟,對上述感光性樹脂組成物層進行曝光。曝光量於能夠使感光性樹脂組成物硬化之範圍內無特別限定,例如,以波長365nm下的曝光能量換算照射100~10000mJ/cm2 為較佳,照射200~8000mJ/cm2 為更佳。 曝光波長能夠於190~1000nm的範圍內適當設定,240~550nm為較佳。 關於曝光波長,若以與光源的關係描述,則可舉出(1)半導體雷射(波長830nm、532nm、488nm、405nm etc.)、(2)金屬鹵化物燈、(3)高壓水銀燈、g射線(波長436nm)、h射線(波長405nm)、i射線(波長365nm)、寬(g、h、i射線的3波長)、(4)準分子雷射、KrF準分子雷射(波長248nm)、ArF準分子雷射(波長193nm)、F2準分子雷射(波長157nm)、(5)極紫外線;EUV(波長13.6nm)、(6)電子束等。關於本發明中的感光性樹脂組成物,尤其基於高壓水銀燈之曝光為較佳,其中,基於i射線之曝光為較佳。藉此,尤其可得到高的曝光靈敏度。<<Exposure step>> The production method of the present invention may include an exposure step of exposing the above-mentioned photosensitive resin composition layer. The exposure amount is not particularly limited within the range capable of curing the photosensitive resin composition. For example, 100-10000 mJ/cm 2 is preferably irradiated in terms of exposure energy at a wavelength of 365 nm, and more preferably 200-8000 mJ/cm 2 . The exposure wavelength can be appropriately set within the range of 190 to 1000 nm, preferably 240 to 550 nm. Regarding the exposure wavelength, if described in relation to the light source, (1) semiconductor laser (wavelength 830nm, 532nm, 488nm, 405nm etc.), (2) metal halide lamp, (3) high pressure mercury lamp, g Ray (wavelength 436nm), h-ray (wavelength 405nm), i-ray (wavelength 365nm), broad (3 wavelengths of g, h, i-ray), (4) excimer laser, KrF excimer laser (wavelength 248nm) , ArF excimer laser (wavelength 193nm), F2 excimer laser (wavelength 157nm), (5) extreme ultraviolet; EUV (wavelength 13.6nm), (6) electron beam, etc. Regarding the photosensitive resin composition in the present invention, exposure by a high-pressure mercury lamp is particularly preferable, and among them, exposure by i-rays is preferable. Thereby, especially high exposure sensitivity can be obtained.

<<顯影處理步驟>> 本發明的製造方法可以包括顯影處理步驟,對經曝光之感光性樹脂組成物層進行顯影處理。藉由進行顯影,未曝光之部分(非曝光部)被去除。關於顯影方法,只要能夠形成所希望的圖案,則無特別限定,例如,能夠採用旋覆浸沒、噴霧、浸漬、超聲波等顯影方法。 顯影使用顯影液來進行。關於顯影液,只要可去除未曝光之部分(非曝光部),則能夠使用而無特別限制。顯影液包含有機溶劑為較佳,顯影液包含90%以上的有機溶劑為更佳。本發明中,顯影液包含ClogP值係-1~5的有機溶劑為較佳,包含ClogP值係0~3的有機溶劑為更佳。ClogP值能夠藉由ChemBioDraw(化學生物圖)輸入結構式而作為計算值來求出。 關於有機溶劑,作為酯類,例如可適宜地舉出乙酸乙酯、乙酸正丁酯、甲酸戊酯、乙酸異戊酯、乙酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例:烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例:3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例:2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等,以及作為醚類,例如可適宜地舉出二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等,以及作為酮類,例如可適宜地舉出甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等,以及作為芳香族烴類,例如可適宜地舉出甲苯、二甲苯、大茴香醚、檸檬烯等,以及作為亞碸類,可適宜地舉出二甲基亞碸。 本發明中,尤其環戊酮、γ-丁內酯為較佳,環戊酮為更佳。 顯影液的50質量%以上係有機溶劑為較佳,70質量%以上係有機溶劑為更佳,90質量%以上係有機溶劑為進一步較佳。又,顯影液的100質量%可以為有機溶劑。<<Development processing steps>> The manufacturing method of the present invention may include a development treatment step, which is to perform development treatment on the exposed photosensitive resin composition layer. By developing, the unexposed part (non-exposed part) is removed. The developing method is not particularly limited as long as a desired pattern can be formed, and for example, developing methods such as spin-on immersion, spraying, dipping, and ultrasonic waves can be employed. Image development is performed using a developer. There are no particular limitations on the developer as long as it can remove the unexposed portion (non-exposed portion). It is preferable that the developer contains an organic solvent, and it is more preferable that the developer contains more than 90% of the organic solvent. In the present invention, the developer preferably contains an organic solvent with a ClogP value of −1 to 5, and more preferably contains an organic solvent with a ClogP value of 0 to 3. The ClogP value can be obtained as a calculated value by inputting a structural formula in ChemBioDraw (chemical biological diagram). Regarding organic solvents, examples of esters include ethyl acetate, n-butyl acetate, amyl formate, isopentyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, butyric acid Ethyl ester, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetate (example: methyl alkoxyacetate , ethyl alkoxyacetate, butyl alkoxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate esters, etc.), 3-alkoxy propionate alkyl esters (eg: 3-alkoxy propionate methyl ester, 3-alkoxy propionate ethyl ester, etc. (eg, 3-methoxy propionate methyl ester, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-alkoxypropionate (example: 2 - Methyl 2-methoxypropionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate ester, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkoxy-2-methylpropionate and 2 - Ethyl alkoxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate), methyl pyruvate ester, ethyl pyruvate, propyl pyruvate, methyl acetylacetate, ethyl acetylacetate, methyl 2-oxobutyrate, ethyl 2-oxobutyrate, etc., and as ethers, for example, Suitably exemplified are diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol mono Methyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc., and as ketone For example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, etc., and aromatic hydrocarbons , For example, toluene, xylene, anisole, limonene, etc. are suitably mentioned, and as aroxines, dimethylarridine is suitably mentioned. In the present invention, cyclopentanone and γ-butyrolactone are particularly preferred, and cyclopentanone is more preferred. It is preferable that 50 mass % or more of a developer is an organic solvent, it is more preferable that 70 mass % or more is an organic solvent, and it is still more preferable that 90 mass % or more is an organic solvent. In addition, 100% by mass of the developer may be an organic solvent.

作為顯影時間,10秒鐘~5分鐘為較佳。顯影時的顯影液的溫度並無特別限定,通常能夠於20~40℃下進行。 於使用了顯影液之處理之後,進而可以進行沖洗。沖洗以與顯影液不同之溶劑進行為較佳。例如,能夠使用感光性樹脂組成物中所含有之溶劑進行沖洗。沖洗時間係5秒鐘~1分鐘為較佳。As developing time, 10 seconds - 5 minutes are preferable. The temperature of the developing solution at the time of image development is not specifically limited, Usually, it can perform at 20-40 degreeC. Rinsing may be further performed after the processing using the developing solution. Rinsing is preferably carried out with a solvent different from that of the developer. For example, rinsing can be performed using a solvent contained in the photosensitive resin composition. The flushing time is preferably 5 seconds to 1 minute.

<<加熱步驟>> 本發明的製造方法包括於膜形成步驟(層形成步驟)、乾燥步驟或顯影步驟之後進行加熱之步驟為較佳。加熱步驟中,進行聚合物前驅物的環化反應。又,本發明的組成物可以包含除了聚合物前驅物以外的自由基聚合性化合物,並能夠於該步驟中進行除了未反應的聚合物前驅物以外的自由基聚合性化合物的硬化等。作為加熱步驟中的層的加熱溫度(最高加熱溫度),50~500℃為較佳,80~450℃為更佳,140~350℃為進一步較佳,160~250℃為進一步較佳,170~220℃為最佳。 關於加熱,從加熱開始時的溫度至最高加熱溫度以1~12℃/分鐘的升溫速度進行為較佳,2~10℃/分鐘為更佳,3~10℃/分鐘為進一步較佳。藉由將升溫速度設為1℃/分鐘以上,能夠確保生產率的同時防止胺的過度揮發,藉由將升溫速度設為12℃/分鐘以下,能夠緩和硬化膜的殘存應力。 加熱開始時的溫度係20℃~150℃為較佳,20℃~130℃為更佳,25℃~120℃為進一步較佳。加熱開始時的溫度是指,開始加熱至最高加熱溫度之步驟時的溫度。例如,將感光性樹脂組成物適用於基板上之後,使其乾燥時,為該乾燥後膜(層)的溫度,例如,從比感光性樹脂組成物中所含有之溶劑的沸點低30~200℃的溫度逐漸升溫為較佳。 加熱時間(最高加熱溫度下的加熱時間)係10~360分鐘為較佳,20~300分鐘為更佳,30~240分鐘為進一步較佳。 尤其形成多層積層體時,從硬化膜的層間的密接性的觀點考慮,於180℃~320℃的加熱溫度下進行加熱為較佳,於180℃~260℃下進行加熱為更佳。其理由雖不確定,但認為其原因如下,亦即藉由設為該溫度,層間的聚合物前驅物的乙炔基彼此進行交聯反應。<<Heating step>> The production method of the present invention preferably includes a step of heating after the film forming step (layer forming step), drying step, or developing step. In the heating step, the cyclization reaction of the polymer precursor proceeds. In addition, the composition of the present invention may contain a radically polymerizable compound other than the polymer precursor, and curing of the radically polymerizable compound other than the unreacted polymer precursor can be performed in this step. The heating temperature (maximum heating temperature) of the layer in the heating step is preferably 50 to 500°C, more preferably 80 to 450°C, still more preferably 140 to 350°C, still more preferably 160 to 250°C, and 170 ~220°C is the best. The heating is preferably carried out at a rate of temperature increase from the temperature at the start of heating to the maximum heating temperature at a rate of 1 to 12°C/min, more preferably 2 to 10°C/min, and still more preferably 3 to 10°C/min. By setting the rate of temperature increase to 1° C./minute or more, excessive volatilization of amine can be prevented while ensuring productivity, and residual stress of the cured film can be relaxed by setting the rate of temperature increase to 12° C./minute or less. The temperature at the start of heating is preferably from 20°C to 150°C, more preferably from 20°C to 130°C, and still more preferably from 25°C to 120°C. The temperature at the start of heating refers to the temperature at the start of the step of heating to the highest heating temperature. For example, when the photosensitive resin composition is applied to the substrate and dried, the temperature of the dried film (layer), for example, is 30 to 200°C lower than the boiling point of the solvent contained in the photosensitive resin composition. It is preferable to gradually increase the temperature in °C. The heating time (heating time at the highest heating temperature) is preferably from 10 to 360 minutes, more preferably from 20 to 300 minutes, and still more preferably from 30 to 240 minutes. In particular, when forming a multilayer laminate, it is preferable to heat at a heating temperature of 180° C. to 320° C., and more preferably to heat at 180° C. to 260° C. from the viewpoint of the adhesiveness between layers of a cured film. The reason for this is not certain, but it is considered that by setting this temperature, the acetylene groups of the polymer precursor between the layers undergo a crosslinking reaction.

加熱可以分階段進行。作為例,可以以3℃/分鐘從25℃升溫至180℃,且於180℃下保持60分鐘,以2℃/分鐘從180℃升溫至200℃,且於200℃下保持120分鐘之前處理步驟。作為前處理步驟之加熱溫度係100~200℃為較佳,110~190℃為更佳,120~185℃為進一步較佳。該前處理步驟中,如美國專利9159547號公報中所記載那樣照射紫外線的同時進行處理亦為較佳。藉由該等前處理步驟能夠提高膜的特性。前處理步驟於10秒鐘~2小時左右的短時間內進行即可,15秒鐘~30分鐘為更佳。前處理可以是兩階段以上的步驟,例如可以於100~150℃的範圍內進行前處理步驟1,然後於150~200℃的範圍內進行前處理步驟2。 進而,可以於加熱之後進行冷卻,作為該情況下的冷卻速度,1~5℃/分鐘為較佳。Heating can be done in stages. As an example, the temperature can be raised from 25°C to 180°C at 3°C/min and kept at 180°C for 60 minutes, and the temperature can be raised from 180°C to 200°C at 2°C/min and kept at 200°C for 120 minutes. . The heating temperature in the pretreatment step is preferably 100 to 200°C, more preferably 110 to 190°C, and still more preferably 120 to 185°C. In this pretreatment step, it is also preferable to perform treatment while irradiating ultraviolet rays as described in US Patent No. 9,159,547. The properties of the film can be improved by these pretreatment steps. The pretreatment step can be carried out within a short period of about 10 seconds to 2 hours, more preferably 15 seconds to 30 minutes. The pretreatment may be a step of more than two stages. For example, the pretreatment step 1 may be performed at a temperature ranging from 100 to 150°C, and then the pretreatment step 2 may be performed at a temperature ranging from 150 to 200°C. Furthermore, cooling may be performed after heating, and the cooling rate in this case is preferably 1 to 5° C./min.

關於加熱步驟,從防止聚合物前驅物的分解的方面考慮,藉由使氮、氦、氬等惰性氣體流過等,於低氧濃度的環境下進行為較佳。氧濃度係50ppm(體積比)以下為較佳,20ppm(體積比)以下為更佳。The heating step is preferably performed in an environment with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon, from the viewpoint of preventing the decomposition of the polymer precursor. The oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less.

<<金屬層形成步驟>> 本發明的製造方法包括於顯影處理後的感光性樹脂組成物層的表面形成金屬層之金屬層形成步驟為較佳。 作為金屬層,無特別限定,能夠使用現有的金屬種類,例示銅、鋁、鎳、釩、鈦、鉻、鈷、金及鎢,銅及鋁為更佳,銅為進一步較佳。 金屬層的形成方法無特別限定,能夠適用現有的方法。例如,能夠使用日本特開2007-157879號公報、日本特表2001-521288號公報、日本特開2004-214501號公報、日本特開2004-101850號公報中所記載之方法。例如,可考慮光微影、剝離、電解電鍍、無電解電鍍、蝕刻、印刷及組合該等而成之方法等。更具體而言,可舉出組合濺射、光微影及蝕刻而成之圖案化方法、組合光微影與電解電鍍而成之圖案化方法。 作為金屬層的厚度,於最厚的壁厚部係0.1~50μm為較佳,1~10μm為更佳。<<Metal layer formation process>> It is preferable that the manufacturing method of the present invention includes a metal layer forming step of forming a metal layer on the surface of the photosensitive resin composition layer after the development treatment. The metal layer is not particularly limited, and conventional metals can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, and tungsten. Copper and aluminum are more preferable, and copper is still more preferable. The method for forming the metal layer is not particularly limited, and existing methods can be applied. For example, the methods described in JP-A-2007-157879, JP-A-2001-521288, JP-A-2004-214501, and JP-A-2004-101850 can be used. For example, photolithography, lift-off, electrolytic plating, electroless plating, etching, printing, and a method combining them can be considered. More specifically, a patterning method combining sputtering, photolithography, and etching, and a patterning method combining photolithography and electrolytic plating are mentioned. The thickness of the metal layer is preferably 0.1 to 50 μm, more preferably 1 to 10 μm, at the thickest part.

<<積層步驟>> 本發明的製造方法還包含積層步驟為較佳。 積層步驟是指,包括於硬化膜(樹脂層)或金屬層的表面再次進行上述膜形成步驟(層形成步驟)及加熱步驟或對感光性樹脂組成物依次進行上述膜形成步驟(層形成步驟)、上述曝光步驟及上述顯影處理步驟之情況之一系列的步驟。積層步驟中還可以包括上述乾燥步驟和加熱步驟等是毋庸置疑的。 當於積層步驟之後進而進行積層步驟時,可以於上述加熱步驟之後,且於上述曝光步驟之後或於上述金屬層形成步驟之後,進而進行表面活化處理步驟。作為表面活化處理,例示電漿處理。 上述積層步驟進行2~5次為較佳,進行3~5次為更佳。 例如,如樹脂層/金屬層/樹脂層/金屬層/樹脂層/金屬層那樣的樹脂層為3層以上且7層以下的結構為較佳,3層以上且5層以下為進一步較佳。 亦即,本發明中,尤其於設置金屬層之後,進而依次進行上述感光性樹脂組成物的膜形成步驟(層形成步驟)及加熱步驟或對感光性樹脂組成物依次進行上述膜形成步驟(層形成步驟)、上述曝光步驟及上述顯影處理步驟(依需要進而進行加熱步驟),以使覆蓋上述金屬層為較佳。藉由交替進行對感光性樹脂組成物層(樹脂)進行積層之積層步驟和金屬層形成步驟,能夠交替積層感光性樹脂組成物層(樹脂層)和金屬層。<<Stacking steps>> It is preferable that the manufacturing method of the present invention further includes a layering step. The lamination step includes performing the above-mentioned film formation step (layer formation step) and heating step again on the surface of the cured film (resin layer) or metal layer, or sequentially performing the above-mentioned film formation step (layer formation step) on the photosensitive resin composition. . A series of steps in the case of the above-mentioned exposure step and the above-mentioned development treatment step. It goes without saying that the above-mentioned drying step, heating step, and the like may also be included in the lamination step. When the layering step is performed after the layering step, the surface activation treatment step may be further performed after the above-mentioned heating step, after the above-mentioned exposure step, or after the above-mentioned metal layer forming step. As the surface activation treatment, plasma treatment is exemplified. It is better to carry out the above lamination step 2 to 5 times, more preferably 3 to 5 times. For example, the resin layer structure such as resin layer/metal layer/resin layer/metal layer/resin layer/metal layer is preferably 3 or more and 7 or less layers, and is more preferably 3 or more and 5 or less layers. That is, in the present invention, after the metal layer is provided, the film forming step (layer forming step) and the heating step of the above-mentioned photosensitive resin composition are further sequentially performed or the above-mentioned film forming step (layer forming step) is sequentially performed on the photosensitive resin composition. Forming step), the above-mentioned exposure step and the above-mentioned development treatment step (and further heating step if necessary), so as to cover the above-mentioned metal layer is preferred. By alternately performing the lamination step of laminating the photosensitive resin composition layer (resin) and the metal layer forming step, the photosensitive resin composition layer (resin layer) and the metal layer can be alternately laminated.

本發明中亦揭示具有本發明的硬化膜或積層體之半導體裝置。作為將本發明的感光性樹脂組成物使用在再配線層用層間絕緣膜的形成中之半導體裝置的具體例,能夠參閱日本特開2016-027357號公報的0213~0218段的記載及圖1的記載,並將該等內容編入本說明書中。 [實施例]The present invention also discloses a semiconductor device having the cured film or laminate of the present invention. As a specific example of a semiconductor device using the photosensitive resin composition of the present invention in the formation of an interlayer insulating film for a rewiring layer, reference can be made to the description in paragraphs 0213 to 0218 of JP-A-2016-027357 and the description in FIG. 1 . record and incorporate them into this manual. [Example]

以下,舉出實施例對本發明進行進一步詳細的說明。以下的實施例中所示出之材料、使用量、比例、處理內容、處理步驟等於不脫離本發明的宗旨之範圍內,能夠適當進行變更。因此,本發明的範圍並不限定於以下所示之具體例。除非另有說明,則“份”、“%”為質量基準。Hereinafter, the present invention will be described in more detail with reference to examples. The materials, usage amounts, ratios, processing contents, and processing steps shown in the following examples can be appropriately changed within the scope not departing from the gist of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise stated, "parts" and "%" are mass benchmarks.

<合成例1> [源自均苯四甲酸二酐、4,4’-二胺基二苯醚及苄醇的聚醯亞胺前驅物(A-1:不具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 使14.06g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下乾燥12小時)和14.22g(131.58毫莫耳)的苄醇懸浮於50mL的N-甲基吡咯啶酮,並用分子篩進行了乾燥。於100℃下將懸浮液加熱了3小時。加熱後經過幾分鐘之後得到了透明的溶液。將反應混合物冷卻至室溫,並添加了21.43g(270.9毫莫耳)的吡啶及90mL的N-甲基吡咯啶酮。接著,將反應混合物冷卻至-10℃,將溫度保持在-10±4℃的同時經10分鐘添加了16.12g(135.5毫莫耳)的SOCl2 。添加SOCl2 期間,黏度得以增加。用50mL的N-甲基吡咯啶酮稀釋之後,於室溫下將反應混合物攪拌了2小時。接著,於-5~0℃下經20分鐘向反應混合物滴加了將11.08g(58.7毫莫耳)的4,4’-二胺基二苯醚溶解於100mL的N-甲基吡咯啶酮而成之溶液。接著,於0℃下使反應混合物反應1小時之後,添加70g的乙醇,並於室溫下攪拌了一晚。接著,使聚醯亞胺前驅物於5升水中沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。藉由過濾去除聚醯亞胺前驅物,於4升水中再次攪拌30分鐘且再次進行了過濾。接著,於減壓下,以45℃將所得到之聚醯亞胺前驅物乾燥了3天。該聚醯亞胺前驅物的重量平均分子量為18,000。 A-1 [化學式34]

Figure 02_image066
<Synthesis Example 1> [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and benzyl alcohol (A-1: no radical polymerizable group Synthesis of polyimide precursor)] Suspend 14.06g (64.5mmol) of pyromellitic dianhydride (dried at 140°C for 12 hours) and 14.22g (131.58mmol) of benzyl alcohol in 50mL N-methylpyrrolidone and dried over molecular sieves. The suspension was heated at 100°C for 3 hours. After a few minutes of heating a clear solution was obtained. The reaction mixture was cooled to room temperature, and 21.43 g (270.9 mmol) of pyridine and 90 mL of N-methylpyrrolidone were added. Next, the reaction mixture was cooled to -10°C, and 16.12 g (135.5 mmol) of SOCl 2 were added over 10 minutes while maintaining the temperature at -10±4°C. During the addition of SOCl 2 the viscosity was increased. After dilution with 50 mL of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, 11.08 g (58.7 mmol) of 4,4'-diaminodiphenyl ether dissolved in 100 mL of N-methylpyrrolidone was added dropwise to the reaction mixture over 20 minutes at -5 to 0°C. The resulting solution. Next, after allowing the reaction mixture to react at 0°C for 1 hour, 70 g of ethanol was added, followed by stirring overnight at room temperature. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimide precursor mixture was stirred for 15 minutes at a speed of 5000 rpm. The polyimide precursor was removed by filtration, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimide precursor was dried at 45° C. for 3 days under reduced pressure. The weight average molecular weight of the polyimide precursor was 18,000. A-1 [chemical formula 34]
Figure 02_image066

<合成例2> [源自均苯四甲酸二酐、4,4’-二胺基二苯醚及甲基丙烯酸-2-羥基乙酯的聚醯亞胺前驅物(A-2:具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 將14.06g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下乾燥了12小時)、16.8g(129毫莫耳)的甲基丙烯酸-2-羥基乙酯、0.05g的對苯二酚、20.4g的吡啶(258毫莫耳)及100g的二甘醇二甲醚(二乙二醇二甲醚)進行混合,於60℃的溫度下攪拌18小時而製造了均苯四甲酸與甲基丙烯酸-2-羥基乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基二苯醚轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了聚醯亞胺前驅物。該聚醯亞胺前驅物的重量平均分子量為19,000。 A-2 [化學式35]

Figure 02_image068
<Synthesis Example 2> [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and 2-hydroxyethyl methacrylate (A-2: with free 14.06g (64.5mmol) of pyromellitic dianhydride (dried at 140°C for 12 hours), 16.8g (129mmol) ) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 20.4 g of pyridine (258 millimoles) and 100 g of diglyme (diethylene glycol dimethyl ether) were mixed , Stirring at a temperature of 60° C. for 18 hours produced a diester of pyromellitic acid and 2-hydroxyethyl methacrylate. Then, after the obtained diester was chlorinated by SOCl 2 , it was converted into a polyimide precursor with 4,4'-diaminodiphenyl ether in the same manner as in Synthesis Example 1, and 1 The same method obtained the polyimide precursor. The weight average molecular weight of the polyimide precursor was 19,000. A-2 [chemical formula 35]
Figure 02_image068

<合成例3> [源自4,4’-氧二鄰苯二甲酸酐、4,4’-二胺基二苯醚及甲基丙烯酸-2-羥基乙酯的聚醯亞胺前驅物(A-3:具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)的4,4’-氧二鄰苯二甲酸酐(於140℃下乾燥了12小時)、16.8g(129毫莫耳)的甲基丙烯酸-2-羥基乙酯、0.05g的對苯二酚、20.4g的吡啶(258毫莫耳)的吡啶、及100g的二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸酐與甲基丙烯酸-2-羥基乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基二苯醚轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了聚醯亞胺前驅物。該聚醯亞胺前驅物的重量平均分子量為18,000。 A-3 [化學式36]

Figure 02_image070
<Synthesis Example 3> [Polyimide precursor derived from 4,4'-oxydiphthalic anhydride, 4,4'-diaminodiphenyl ether, and 2-hydroxyethyl methacrylate ( A-3: Synthesis of polyimide precursor having radically polymerizable groups] 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic anhydride (dried at 140°C 12 hours), 16.8 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 20.4 g of pyridine (258 mmol) of pyridine, and 100 g of diethylene glycol Alcohol dimethyl ether was mixed and stirred at a temperature of 60° C. for 18 hours to manufacture a diester of 4,4′-oxydiphthalic anhydride and 2-hydroxyethyl methacrylate. Then, after the obtained diester was chlorinated by SOCl 2 , it was converted into a polyimide precursor with 4,4'-diaminodiphenyl ether in the same manner as in Synthesis Example 1, and 1 The same method obtained the polyimide precursor. The weight average molecular weight of the polyimide precursor was 18,000. A-3 [chemical formula 36]
Figure 02_image070

<合成例4> [源自4,4’-氧二鄰苯二甲酸酐、4,4’-二胺基-2,2’-二甲基聯苯(鄰聯甲苯)及甲基丙烯酸-2-羥基乙酯的聚醯亞胺前驅物(A-4:具有自由基聚合性基團之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)的4,4’-氧二鄰苯二甲酸酐(於140℃下攪拌了12小時)、16.8g(129毫莫耳)的甲基丙烯酸-2-羥基乙酯、0.05g的對苯二酚、20.4g的吡啶(258毫莫耳)及100g的二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸酐與甲基丙烯酸-2-羥基乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基-2,2’-二甲基聯苯轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了聚醯亞胺前驅物。該聚醯亞胺前驅物的重量平均分子量為19,000。 A-4 [化學式37]

Figure 02_image072
<Synthesis Example 4> [Derived from 4,4'-oxydiphthalic anhydride, 4,4'-diamino-2,2'-dimethylbiphenyl (ortho-toluene) and methacrylic acid- Synthesis of polyimide precursor of 2-hydroxyethyl ester (A-4: polyimide precursor with radical polymerizable group)] 20.0 g (64.5 millimoles) of 4,4'- Oxydiphthalic anhydride (stirred at 140°C for 12 hours), 16.8 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 20.4 g of pyridine ( 258 millimoles) and 100 g of diglyme, and stirred at 60°C for 18 hours to produce 4,4'-oxydiphthalic anhydride and methacrylic acid-2-hydroxyethyl Diesters of esters. Next, after the obtained diester was chlorinated by SOCl 2 , it was converted into polyimide by the same method as in Synthesis Example 1 using 4,4'-diamino-2,2'-dimethylbiphenyl Precursor, and obtained polyimide precursor with the same method as Synthetic Example 1. The weight average molecular weight of the polyimide precursor was 19,000. A-4 [chemical formula 37]
Figure 02_image072

<合成例5> [源自2,2’-雙(3-胺基-4-羥基苯基)六氟丙烷、4,4’-氧代二苯甲醯氯的聚苯并㗁唑前驅物(A-5)的合成] 向N-甲基-2-吡咯啶酮100mL添加2,2’-雙(3-胺基-4-羥基苯基)六氟丙烷13.92g並進行了攪拌溶解。接著,將溫度保持0~5℃的同時經10分鐘滴加11.21g的4,4’-氧代二苯甲醯氯之後,持續攪拌了60分鐘。接著,使聚苯并㗁唑前驅物於6升水中沉澱,以5000rpm的速度將水-聚苯并㗁唑前驅物混合物攪拌了15分鐘。藉由過濾去除聚苯并㗁唑前驅物,於6升水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下,於45℃下將所得到之聚苯并㗁唑前驅物乾燥了3天。該聚苯并㗁唑前驅物的重量平均分子量為15,000。 A-5 [化學式38]

Figure 02_image074
<Synthesis Example 5> [Polybenzoxazole precursor derived from 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 4,4'-oxodibenzoyl chloride (A-5) Synthesis] To 100 mL of N-methyl-2-pyrrolidone, 13.92 g of 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane was added and dissolved with stirring. Next, 11.21 g of 4,4'- oxydibenzoyl chlorides were dripped over 10 minutes, keeping temperature 0-5 degreeC, and stirring was continued for 60 minutes. Next, the polybenzoxazole precursor was precipitated in 6 liters of water, and the water-polybenzoxazole precursor mixture was stirred for 15 minutes at a speed of 5000 rpm. The polybenzoxazole precursor was removed by filtration, stirred again in 6 liters of water for 30 minutes and filtered again. Next, the obtained polybenzoxazole precursor was dried at 45° C. for 3 days under reduced pressure. The weight average molecular weight of the polybenzoxazole precursor is 15,000. A-5 [chemical formula 38]
Figure 02_image074

<合成例6> [比較例用聚合物(RA-1)的合成] 將27.0g(153.2毫莫耳)的甲基丙烯酸芐酯、20g(157.3毫莫耳)的N-異丙基甲基丙烯醯胺、39g(309.2毫莫耳)的甲基丙烯酸烯丙酯、13g(151.0毫莫耳)的甲基丙烯酸、聚合起始劑(V-601、Wako Pure Chemical Industries, Ltd.製)3.55g(15.4毫莫耳)及3-甲氧基-2-丙醇300g進行了混合。於氮環境下,將混合液經2小時滴加到加熱至75℃之3-甲氧基-2-丙醇300g中。滴加結束之後,進而於氮環境下,於75℃下攪拌了2小時。反應結束之後,使聚合物於5升水中沉澱,並以5000rpm的速度攪拌了15分鐘。藉由過濾去除丙烯酸樹脂,於4升水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下,於45下℃將丙烯酸樹脂乾燥了3天。該聚合物的重量平均分子量為25,000。 RA-1 [化學式39]

Figure 02_image076
<Synthesis Example 6> [Synthesis of Polymer (RA-1) for Comparative Example] 27.0 g (153.2 mmol) of benzyl methacrylate, 20 g (157.3 mmol) of N-isopropylmethyl Acrylamide, 39 g (309.2 mmol) of allyl methacrylate, 13 g (151.0 mmol) of methacrylic acid, polymerization initiator (V-601, manufactured by Wako Pure Chemical Industries, Ltd.) 3.55 g (15.4 millimoles) and 300 g of 3-methoxy-2-propanol were mixed. Under a nitrogen atmosphere, the mixed solution was added dropwise to 300 g of 3-methoxy-2-propanol heated to 75° C. over 2 hours. After completion of the dropwise addition, stirring was carried out at 75° C. for 2 hours under a nitrogen atmosphere. After the reaction, the polymer was precipitated in 5 liters of water and stirred at a speed of 5000 rpm for 15 minutes. The acrylic resin was removed by filtration, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the acrylic resin was dried at 45° C. for 3 days under reduced pressure. The polymer had a weight average molecular weight of 25,000. RA-1 [Chemical Formula 39]
Figure 02_image076

<實施例及比較例> 將下述表中所記載的成分進行混合而得到了各感光性樹脂組成物。使所得到之感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器進行了加壓過濾。 <<感光性樹脂組成物的組成>> 聚醯亞胺前驅物:表中所記載的質量份 自由基聚合起始劑:表中所記載的質量份 自由基聚合性化合物:表中所記載的質量份 其他成分;表中所記載的質量份<Example and Comparative Example> The components described in the following tables were mixed to obtain each photosensitive resin composition. The obtained photosensitive resin composition was pressure-filtered through a filter having a pore width of 0.8 μm. <<Composition of Photosensitive Resin Composition>> Polyimide precursor: parts by mass recorded in the table Radical polymerization initiator: parts by mass recorded in the table Radical polymerizable compound: parts by mass listed in the table Other ingredients; parts by mass recorded in the table

(B)加熱時酸性度降低之化合物(酸消失劑) [化學式40]

Figure 02_image078
[比較用化合物] [化學式41]
Figure 02_image080
(B) A compound whose acidity decreases when heated (acid disappearing agent) [Chemical formula 40]
Figure 02_image078
[compound for comparison] [chemical formula 41]
Figure 02_image080

以下,示出於300℃下加熱前後的pKa的值。 [表1]

Figure 108102988-A0304-0001
Below, the pKa values before and after heating at 300° C. are shown. [Table 1]
Figure 108102988-A0304-0001

(C)自由基聚合起始劑 C-1:IRGACURE OXE 01(BASF公司製) C-2:IRGACURE OXE 02(BASF公司製) C-3:IRGACURE 369(BASF公司製)(C) Radical polymerization initiator C-1: IRGACURE OXE 01 (manufactured by BASF Corporation) C-2: IRGACURE OXE 02 (manufactured by BASF Corporation) C-3: IRGACURE 369 (manufactured by BASF Corporation)

(D)自由基聚合性化合物 D-1:A-DPH(Shin-Nakamura Chemical Co.,Ltd.製) D-2:SR-209(Sartomer Company,Inc.製) [化學式42]

Figure 02_image082
D-3:A-TMMT(Shin-Nakamura Chemical Co.,Ltd.製)(D) Radical polymerizable compound D-1: A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.) D-2: SR-209 (manufactured by Sartomer Company, Inc.) [Chemical formula 42]
Figure 02_image082
D-3: A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)

(E)聚合抑制劑 E-1:2,6-二-第三丁基-4-甲基苯酚(Tokyo Chemical Industry Co., Ltd.製) E-2:對苯醌(Tokyo Chemical Industry Co., Ltd.製) E-3:對甲氧基苯酚(Tokyo Chemical Industry Co., Ltd.製) (F)遷移抑制劑 F-1:下述化合物 F-2:下述化合物 F-3:下述化合物 F-4:下述化合物 [化學式43]

Figure 02_image084
(E) Polymerization inhibitor E-1: 2,6-di-tert-butyl-4-methylphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) E-2: p-benzoquinone (Tokyo Chemical Industry Co. , Ltd.) E-3: p-methoxyphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) (F) Migration inhibitor F-1: the following compound F-2: the following compound F-3: the following Said compound F-4: the following compound [chemical formula 43]
Figure 02_image084

(G)金屬黏著性改良劑 G-1:下述化合物 G-2:下述化合物 G-3:下述化合物(G) Metal adhesion improver G-1: The following compound G-2: The following compounds G-3: The following compounds

[化學式44]

Figure 02_image086
Et:乙基[chemical formula 44]
Figure 02_image086
Et: ethyl

(H)硬化促進劑(鹼產生劑) H-1光硬化促進劑(光鹼產生劑):下述化合物 [化學式45]

Figure 02_image088
H-2光硬化促進劑(光鹼產生劑):下述化合物 Et:乙基 [化學式46]
Figure 02_image090
Me:甲基(H) Hardening accelerator (base generator) H-1 photohardening accelerator (photobase generator): the following compound [chemical formula 45]
Figure 02_image088
H-2 photohardening accelerator (photobase generator): the following compound Et: ethyl [chemical formula 46]
Figure 02_image090
Me: methyl

(I)溶劑 I-1:γ-丁內酯(SANWAYUKA INDUSTRY CORPORATION製) I-2:二甲基亞碸(Wako Pure Chemical Industries, Ltd.製) I-3:N-甲基-2-吡咯啶酮(Ashland公司製)(I) solvent I-1: γ-butyrolactone (manufactured by SANWAYUKA INDUSTRY CORPORATION) I-2: Dimethylsulfone (manufactured by Wako Pure Chemical Industries, Ltd.) I-3: N-methyl-2-pyrrolidone (manufactured by Ashland Corporation)

<保存穩定性> 使用E型黏度計測定了上述過濾後的感光性樹脂組成物的黏度(0天)。於密閉容器中,將感光性樹脂組成物以25℃靜置了14天之後,再次使用E型黏度計測定了黏度(14天)。從以下的式計算出黏度降低率。黏度降低率越低表示保存穩定性越高。 黏度降低率=100×{1-(黏度(14天)/黏度(0天))} 黏度的測定於25℃下進行,除此以外,依照JIS Z 8803:2011進行。 A:黏度降低率為5%以下 B:黏度降低率大於5%且為10%以下 C:黏度降低率大於10% 且為 15%以下 D:黏度降低率大於15% 且為20%以下 E:黏度降低率大於20%<Storage stability> The viscosity (0 day) of the photosensitive resin composition after the said filtration was measured using the E-type viscometer. After allowing the photosensitive resin composition to stand at 25° C. for 14 days in an airtight container, the viscosity was measured again using an E-type viscometer (14 days). The viscosity reduction rate was calculated from the following formula. The lower the viscosity decrease rate, the higher the storage stability. Viscosity reduction rate=100×{1-(viscosity (14 days)/viscosity (0 days))} The measurement of viscosity was performed at 25 degreeC, and it followed JISZ 8803:2011 except that. A: The viscosity reduction rate is 5% or less B: The viscosity reduction rate is greater than 5% and less than 10% C: The viscosity reduction rate is greater than 10% and less than 15% D: The viscosity reduction rate is greater than 15% and less than 20% E: The viscosity reduction rate is greater than 20%

<斷裂伸長率> 於矽晶圓上藉由旋塗法將上述過濾後的各感光性樹脂組成物適用成層狀而形成了感光性樹脂組成物層。於加熱板上,以100℃將適用了所得到之感光性樹脂組成物層之矽晶圓乾燥5分鐘,從而於矽晶圓上形成了20μm厚度的均勻的感光性樹脂組成物層。使用步進機(Nikon NSR 2005 i9C),以500mJ/cm2 的曝光能量對矽晶圓上的感光性樹脂組成物層進行曝光,於氮環境下,以10℃/分鐘的升溫速度對經曝光之感光性樹脂組成物層(樹脂層)進行升溫,達到250℃之後,將該溫度維持3小時。將硬化後的樹脂層浸漬於4.9%氫氟酸溶液,從矽晶圓剝離樹脂層而得到了樹脂膜1。<Elongation at break> The photosensitive resin composition layer was formed by applying each of the above filtered photosensitive resin compositions in a layered form on a silicon wafer by a spin coating method. The silicon wafer to which the obtained photosensitive resin composition layer was applied was dried on a hot plate at 100° C. for 5 minutes to form a uniform photosensitive resin composition layer with a thickness of 20 μm on the silicon wafer. Use a stepper (Nikon NSR 2005 i9C) to expose the photosensitive resin composition layer on the silicon wafer with an exposure energy of 500mJ/ cm2 . The temperature of the photosensitive resin composition layer (resin layer) was raised to 250° C., and then the temperature was maintained for 3 hours. The cured resin layer was immersed in a 4.9% hydrofluoric acid solution, and the resin layer was peeled off from the silicon wafer to obtain the resin film 1 .

關於樹脂膜1的斷裂伸長率,使用拉伸試驗機(TENSILON)以十字頭速度300mm/分鐘、寬度10mm、試樣長度50mm針對薄膜的長邊方向、寬度方向,於25℃、65%相對濕度(RH)的環境下依照JIS-K6251:2017測定了斷裂伸長率。斷裂伸長率藉由Eb =(Lb -L0 )/L0 (Eb :切割時的伸長率、L0 :試驗前的試驗片的長度、Lb :試驗片已被切割時的試驗片的長度)計算出。評價中,將長邊方向、寬度方向各自的斷裂伸長率各測定5次,並使用了長邊方向和寬度方向的平均值。 A:斷裂伸長率大於80% B:斷裂伸長率大於70%且為80%以下 C:斷裂伸長率大於60% 且為 70%以下 D:斷裂伸長率大於50% 且為 60%以下 E:斷裂伸長率為50%以下Regarding the elongation at break of the resin film 1, use a tensile testing machine (TENSILON) at 25°C and 65% relative humidity for the longitudinal direction and width direction of the film at a crosshead speed of 300 mm/min, a width of 10 mm, and a sample length of 50 mm. The elongation at break was measured in accordance with JIS-K6251:2017 in an environment of (RH). The elongation at break is calculated by E b = (L b - L 0 )/L 0 (E b : elongation at the time of cutting, L 0 : length of the test piece before the test, L b : test when the test piece has been cut slice length) is calculated. In the evaluation, each of the elongation at break in the longitudinal direction and the width direction was measured five times, and the average value in the longitudinal direction and the width direction was used. A: Elongation at break greater than 80% B: Elongation at break greater than 70% and less than 80% C: Elongation at break greater than 60% and less than 70% D: Elongation at break greater than 50% and less than 60% E: Break Elongation below 50%

<最小線寬圖案的分辨率評價> 將上述過濾後的各感光性樹脂組成物旋塗在矽晶圓上於加熱板上,以100℃將適用了感光性樹脂組成物之矽晶圓乾燥5分鐘,從而於矽晶圓上形成了20μm且膜厚均勻的感光性樹脂組成物層。使用步進機(Nikon NSR 2005 i9C)對矽晶圓上的感光性樹脂組成物層進行了曝光。曝光使用i射線進行,於波長365nm下,以200、300、400、500、600、700、800mJ/cm2 的各曝光能量,使用1μm刻度的線-空間的光罩從5μm至25μm進行曝光而得到了樹脂層。<Resolution Evaluation of Minimum Line Width Pattern> Spin-coat each photosensitive resin composition after filtration on a silicon wafer on a heating plate, and dry the silicon wafer to which the photosensitive resin composition is applied at 100°C for 5 Minutes, thereby forming a 20 μm photosensitive resin composition layer with a uniform film thickness on the silicon wafer. The photosensitive resin composition layer on the silicon wafer was exposed using a stepper (Nikon NSR 2005 i9C). Exposure is performed using i-rays at a wavelength of 365nm, with exposure energies of 200, 300, 400, 500, 600, 700, and 800mJ/ cm2 , using a line-space mask with a 1μm scale from 5μm to 25μm. A resin layer was obtained.

用環戊酮對上述樹脂層進行了60秒鐘的顯影。所得到之樹脂層(線圖案)的線寬越小表示越能夠形成微細的圖案,且成為較佳的結果。又,能夠形成的最小線寬越不易針對曝光量的變動發生變化,微細圖案形成中的曝光量的任意性越增大,且成為較佳的結果。測定界限為5μm。 A:為5μm以上且8μm以下 B:大於8μm且為10μm以下 C:大於10μm且為15μm以下 D:大於15μm且為20μm以下 E:大於20μm F:未能得到具備具有邊緣銳度的線寬的圖案The above-mentioned resin layer was developed with cyclopentanone for 60 seconds. The smaller the line width of the obtained resin layer (line pattern), the finer the pattern can be formed, and it is a better result. In addition, the less likely the minimum line width that can be formed is changed in response to fluctuations in exposure amount, the more arbitrary the exposure amount in fine pattern formation becomes, which is a preferable result. The measurement limit is 5 μm. A: 5 μm or more and 8 μm or less B: More than 8 μm and 10 μm or less C: More than 10 μm and 15 μm or less D: More than 15 μm and 20 μm or less E: greater than 20μm F: A pattern having a line width with edge sharpness could not be obtained

[表2]

Figure 108102988-A0304-0002
[表3]
Figure 108102988-A0304-0003
[Table 2]
Figure 108102988-A0304-0002
[table 3]
Figure 108102988-A0304-0003

[表4]

Figure 108102988-A0304-0004
[Table 4]
Figure 108102988-A0304-0004

從上述結果可知,本發明中藉由組合使用聚合物前驅物與特定的酸消失劑,維持了充分的硬化性並實現了高的保存穩定性。又,可知需要時,亦實現了硬化物的高的斷裂伸長率、良好的最小線寬圖案的分辨率,且可依據需求而發揮高的性能。另一方面,於未使用特定的酸消失劑之比較例中,保存穩定性差,且斷裂伸長率亦不充分。從該結果亦可知,本發明的感光性樹脂組成物可於半導體器件的製造及其產品等中發揮優異的性能。From the above results, it can be seen that in the present invention, sufficient curability is maintained and high storage stability is achieved by using the combination of the polymer precursor and the specific acid disappearing agent. In addition, it can be seen that, when necessary, high elongation at break and good resolution of the minimum line width pattern of the cured product are also achieved, and high performance can be exhibited according to requirements. On the other hand, in the comparative example which did not use a specific acid disappearing agent, storage stability was inferior, and elongation at break was also insufficient. It is also clear from this result that the photosensitive resin composition of the present invention exhibits excellent performance in the manufacture of semiconductor devices and their products.

<實施例100> 使感光性樹脂組成物(1)通過細孔的寬度為1.0μm的過濾器而加壓過濾之後,於形成有銅薄層之樹脂基板的表面旋壓成型(3500rpm、30秒鐘)而適用。於100℃下將適用在樹脂基板中之感光性樹脂組成物乾燥2分鐘之後,適用步進機(Nikon Corporation製、NSR1505i6)進行了曝光。曝光經由遮罩,於波長365nm下以200mJ/cm2 的曝光量進行了曝光。曝光之後,進行烘烤,並用環戊酮顯影30秒鐘,用PGMEA沖洗20秒鐘而得到了圖案。 接著,於230℃下加熱3小時而形成了再配線層用層間絕緣膜。該再配線層用層間絕緣膜的絕緣性優異。<Example 100> After passing the photosensitive resin composition (1) through a filter with a pore width of 1.0 μm and filtering under pressure, it was spin-formed on the surface of a resin substrate on which a thin copper layer was formed (3500 rpm, 30 seconds clock) and apply. After drying the photosensitive resin composition applied to the resin substrate at 100°C for 2 minutes, exposure was performed using a stepper (manufactured by Nikon Corporation, NSR1505i6). Exposure was performed at a wavelength of 365 nm at an exposure dose of 200 mJ/cm 2 through a mask. After exposure, it baked, developed with cyclopentanone for 30 seconds, and rinsed with PGMEA for 20 seconds to obtain a pattern. Next, it heated at 230 degreeC for 3 hours, and formed the interlayer insulating film for rewiring layers. The interlayer insulating film for a rewiring layer is excellent in insulating properties.

none

無。none.

Claims (32)

一種感光性樹脂組成物,其包括選自聚醯亞胺前驅物及聚苯并
Figure 108102988-A0305-02-0095-6
唑前驅物中之聚合物前驅物、及加熱時酸性度降低之化合物,該加熱時酸性度降低之化合物係由式A1~A3中的任一個表示之化合物;(X)m-LA-(Y)n‥‥式A1式中,X表示-COOH、-SO3H或-PO3H2,LA表示選自脂肪族連接基、芳基連接基及包括該等的組合之群組中之m+n價連接基,LA中可以夾有具有下述雜原子之連接基Lh,Lh為氧原子、硫原子、羰基、硫代羰基、磺醯基、或-NR-,R為氫原子或有機基團,Y表示-OH或-NH(RN),RN為氫原子,m表示1~4的整數,n表示1~4的整數;(X)m-LA-(Q)n‥‥式A2式中,X表示-COOH、-SO3H或-PO3H2,LA表示m+n價連接基,Q表示-CONH(RN)、-OCONH(RN)、-N(RN)CONH(RN)或-N(RN)3 +A-,A-為成抗衡離子之原子或原子組;Z-(LC-COOH)nz‥‥式A3式中,Z表示nz價有機基團,LC表示*1-(C=O)C(Ra)2-*2、-CH(Rb)-或-C(Rb)2-,Ra表示氫原子、烷基、烯基、芳基或芳烷基,Rb表示烷基、烯基、芳基或芳烷基,*1表示Z側的鍵結位置,*2表示COOH側的鍵結位置,nz為1~4的整數。
A photosensitive resin composition comprising polyimide precursors and polybenzo
Figure 108102988-A0305-02-0095-6
The polymer precursor in the azole precursor and the compound whose acidity decreases when heated is a compound represented by any one of formulas A1 to A3; (X) m -L A -( Y) n ‥‥Formula A1 In the formula, X represents -COOH, -SO 3 H or -PO 3 H 2 , and LA represents a group selected from aliphatic linking groups, aryl linking groups and combinations thereof The m+n valent linking group, L A can contain the linking group Lh with the following heteroatoms, Lh is oxygen atom, sulfur atom, carbonyl, thiocarbonyl, sulfonyl, or -NR-, R is hydrogen An atom or an organic group, Y represents -OH or -NH(R N ), R N represents a hydrogen atom, m represents an integer from 1 to 4, and n represents an integer from 1 to 4; (X) m -L A -(Q ) n ‥‥Formula A2 In the formula, X represents -COOH, -SO 3 H or -PO 3 H 2 , LA represents m+n valent linking group, Q represents -CONH(R N ), -OCONH(R N ) , -N(R N )CONH(R N ) or -N(R N ) 3 + A - , A - is an atom or group of atoms forming a counter ion; Z-( LC -COOH) nz ‥‥Formula A3 Among them, Z represents an nz-valent organic group, L C represents * 1 -(C=O)C(R a ) 2 -* 2 , -CH(R b )- or -C(R b ) 2 -, R a Represents a hydrogen atom, alkyl, alkenyl, aryl or aralkyl, R b represents an alkyl, alkenyl, aryl or aralkyl, * 1 represents the bonding position on the Z side, * 2 represents the bond on the COOH side Knot position, nz is an integer from 1 to 4.
如申請專利範圍第1項所述之感光性樹脂組成物,其中式A1中,X係-SO3H。 The photosensitive resin composition as described in item 1 of the scope of the patent application, wherein in the formula A1, X is -SO 3 H. 一種感光性樹脂組成物,其包括選自聚醯亞胺前驅物及聚苯并
Figure 108102988-A0305-02-0096-5
唑前驅物中之聚合物前驅物、及加熱時酸性度降低之化合物,該加熱時酸性度降低之化合物係由式A1~A3中的任一個表示之化合物;(X)m-LA-(Y)n‥‥式A1式中,X表示-SO3H,LA表示m+n價連接基,Y表示-OH、-COOH或-NH(RN),RN為氫原子或有機基團,m表示1~4的整數,n表示1~4的整數;(X)m-LA-(Q)n‥‥式A2式中,X表示-SO3H,LA表示m+n價連接基,Q表示藉由加熱而釋放鹼成分之基團;Z-(LC-COOH)nz‥‥式A3式中,Z表示nz價有機基團,LC表示*1-(C=O)C(Ra)2-*2、-CH(Rb)-或-C(Rb)2-,Ra表示氫原子、烷基、烯基、芳基或芳烷基,Rb表示烷基、烯基、芳基或芳烷基,*1表示Z側的鍵結位置,*2表示COOH側的鍵結位置,nz為1~4的整數。
A photosensitive resin composition comprising polyimide precursors and polybenzo
Figure 108102988-A0305-02-0096-5
The polymer precursor in the azole precursor and the compound whose acidity decreases when heated is a compound represented by any one of formulas A1 to A3; (X) m -L A -( Y) n ‥‥Formula A1 In the formula, X represents -SO 3 H , LA represents m+n valent linking group, Y represents -OH, -COOH or -NH(R N ), R N is a hydrogen atom or an organic group group, m represents an integer from 1 to 4, and n represents an integer from 1 to 4; (X) m -LA -(Q) n ‥‥Formula A2 In the formula, X represents -SO 3 H, and L A represents m+n A valent linking group, Q represents a group that releases an alkali component by heating; Z-(L C -COOH) nz ‥‥ Formula A3 In the formula, Z represents an nz-valent organic group, and L C represents * 1 -(C= O)C(R a ) 2 -* 2 , -CH(R b )- or -C(R b ) 2 -, R a represents a hydrogen atom, alkyl, alkenyl, aryl or aralkyl, R b Represents an alkyl, alkenyl, aryl or aralkyl group, * 1 represents the bonding position on the Z side, * 2 represents the bonding position on the COOH side, and nz is an integer from 1 to 4.
如申請專利範圍第3項所述之感光性樹脂組成物,其中式A1中,LA表示選自脂肪族連接基、芳基連接基及包括該等的組合之群組中之m+n價連接基。 The photosensitive resin composition as described in item 3 of the scope of the patent application, wherein in formula A1, L A represents the m+n valence selected from the group consisting of aliphatic linking group, aryl linking group and combinations thereof Connection base. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中式A1中,LA係連接X與Y且原子數為3以上且6以下的連接基。 The photosensitive resin composition as described in any one of the first to fourth claims of the patent application, wherein in the formula A1, L A is a linking group connecting X and Y with an atomic number of 3 or more and 6 or less. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中式A1中的m與n的關係為m
Figure 108102988-A0305-02-0097-4
n。
The photosensitive resin composition described in any one of items 1 to 4 of the scope of the patent application, wherein the relationship between m and n in formula A1 is m
Figure 108102988-A0305-02-0097-4
n.
如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該加熱時酸性度降低之化合物的含量於感光性樹脂組成物中係0.01質量%以上且10.0質量%以下。 The photosensitive resin composition as described in any one of the first to fourth claims of the patent application, wherein the content of the compound whose acidity decreases when heated is 0.01% by mass or more and 10.0% by mass in the photosensitive resin composition %the following. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該加熱時酸性度降低之化合物係藉由於400℃下加熱而酸性度降低之化合物。 The photosensitive resin composition described in any one of items 1 to 4 of the patent claims, wherein the compound whose acidity decreases when heated is a compound whose acidity decreases by heating at 400°C. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該加熱時酸性度降低之化合物的pKa係-5.0以上且2.0以下。 The photosensitive resin composition as described in any one of the first to fourth claims of the patent claims, wherein the pKa of the compound whose acidity decreases when heated is -5.0 or more and 2.0 or less. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該加熱時酸性度降低之化合物於加熱前後的pKa差係8.0以上。 The photosensitive resin composition as described in any one of the first to fourth claims of the patent application, wherein the pKa difference before and after heating of the compound whose acidity decreases when heated is 8.0 or more. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該加熱時酸性度降低之化合物係藉由加熱而酸基發生分子內脫水縮合之化合物。 The photosensitive resin composition described in any one of items 1 to 4 of the patent claims, wherein the compound whose acidity decreases when heated is a compound whose acid group undergoes intramolecular dehydration condensation by heating. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該加熱時酸性度降低之化合物的分子量係80以上且1000以下。 The photosensitive resin composition as described in any one of items 1 to 4 of the patent claims, wherein the molecular weight of the compound whose acidity decreases when heated is not less than 80 and not more than 1000. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其還包含自由基聚合起始劑及自由基聚合性化合物。 The photosensitive resin composition described in any one of items 1 to 4 of the scope of the patent application further includes a radical polymerization initiator and a radical polymerizable compound. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其中該聚合物前驅物包含聚醯亞胺前驅物。 The photosensitive resin composition described in any one of items 1 to 4 of the scope of the patent application, wherein the polymer precursor includes a polyimide precursor. 如申請專利範圍第14項所述之感光性樹脂組成物,其中該聚醯亞胺前驅物具有由下述式(1)表示之構成單元;
Figure 108102988-A0305-02-0098-1
式(1)中,A1及A2分別獨立地表示氧原子或NH,R111表示2價有機基團,R115表示4價有機基團,R113及R114分別獨立地表示氫原子或1價有機基團。
The photosensitive resin composition as described in claim 14, wherein the polyimide precursor has a constituent unit represented by the following formula (1):
Figure 108102988-A0305-02-0098-1
In formula (1), A 1 and A 2 independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, R 113 and R 114 independently represent a hydrogen atom or 1-valent organic group.
如申請專利範圍第15項所述之感光性樹脂組成物,其中該式(1)中的R113及R114中的至少一個包含自由基聚合性基團。 The photosensitive resin composition as described in claim 15, wherein at least one of R 113 and R 114 in the formula (1) contains a radical polymerizable group. 如申請專利範圍第15項所述之感光性樹脂組成物,其中該式(1)中的R115係包含芳香環之基團。 The photosensitive resin composition as described in claim 15, wherein R 115 in the formula (1) is a group containing an aromatic ring. 如申請專利範圍第15項所述之感光性樹脂組成物,其中該式(1)中的R111由-Ar0-L0-Ar0-表示; Ar0分別獨立地表示芳香族基,L0表示單鍵、可以經氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2-、-NHCO-以及選自該等的組合之基團。 The photosensitive resin composition as described in item 15 of the scope of patent application, wherein R 111 in the formula (1) is represented by -Ar 0 -L 0 -Ar 0 -; Ar 0 independently represents an aromatic group, L 0 represents a single bond, an aliphatic hydrocarbon group with 1 to 10 carbons that can be substituted by a fluorine atom, -O-, -C(=O)-, -S-, -S(=O) 2 -, -NHCO- and A group selected from a combination of these. 如申請專利範圍第15項所述之感光性樹脂組成物,其中該式(1)中的R111由下述式(51)或式(61)表示;
Figure 108102988-A0305-02-0099-2
式(51)中,R50~R57分別獨立地表示氫原子、氟原子或1價有機基團,R50~R57中的至少一個表示氟原子、甲基、氟甲基、二氟甲基或三氟甲基;
Figure 108102988-A0305-02-0099-3
式(61)中,R58及R59分別獨立地表示氟原子、氟甲基、二氟甲基或三氟甲基。
The photosensitive resin composition as described in claim 15, wherein R 111 in the formula (1) is represented by the following formula (51) or formula (61);
Figure 108102988-A0305-02-0099-2
In formula (51), R 50 ~ R 57 independently represent a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 50 ~ R 57 represents a fluorine atom, methyl, fluoromethyl, difluoromethane group or trifluoromethyl;
Figure 108102988-A0305-02-0099-3
In formula (61), R 58 and R 59 each independently represent a fluorine atom, a fluoromethyl group, a difluoromethyl group or a trifluoromethyl group.
如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其用於使用了包含90%以上的有機溶劑之顯影液之顯影。 The photosensitive resin composition described in any one of items 1 to 4 of the scope of the patent application, which is used for development using a developer solution containing more than 90% of an organic solvent. 如申請專利範圍第1項~第4項中任一項所述之感光性樹脂組成物,其用於再配線層用層間絕緣膜的形成。 The photosensitive resin composition described in any one of items 1 to 4 of the patent claims, which is used for forming an interlayer insulating film for a rewiring layer. 一種硬化膜,其使申請專利範圍第1項~第21項中任一項所述之感光性樹脂組成物硬化而成。 A cured film, which is formed by curing the photosensitive resin composition described in any one of claims 1 to 21. 如申請專利範圍第22項所述之硬化膜,其中膜厚係1μm~30μm。 The hardened film as described in item 22 of the patent application, wherein the film thickness is 1 μm to 30 μm. 一種積層體,其具有兩層以上的如申請專利範圍第22項或第23項所述之硬化膜。 A laminated body having two or more layers of the cured film described in claim 22 or claim 23 of the patent application. 一種積層體,其具有3~7層的如申請專利範圍第22項或第23項所述之硬化膜。 A laminate having 3 to 7 layers of the hardened film described in item 22 or item 23 of the scope of the patent application. 如申請專利範圍第24項所述之積層體,其中於該硬化膜之間具有金屬層。 The laminate according to claim 24, wherein a metal layer is provided between the cured films. 一種硬化膜的製造方法,其包括將如申請專利範圍第1項~第21項中任一項所述之感光性樹脂組成物適用於基板而形成膜之膜形成步驟。 A method for producing a cured film, comprising a film forming step of applying the photosensitive resin composition described in any one of claims 1 to 21 to a substrate to form a film. 如申請專利範圍第27項所述之硬化膜的製造方法,其具有對該膜進行曝光之曝光步驟及對該膜進行顯影之顯影步驟。 The method for producing a cured film according to claim 27, comprising an exposing step of exposing the film and a developing step of developing the film. 如申請專利範圍第28項所述之硬化膜的製造方法,其中該顯影中使用之顯影液包含90%以上的有機溶劑。 The method for producing a cured film as described in claim 28, wherein the developer used in the development contains more than 90% of organic solvent. 如申請專利範圍第27項~第29項中任一項所述之硬化膜的製造方法,其包括於80℃~450℃下對該膜進行加熱之步驟。 The method of manufacturing a cured film according to any one of the 27th to 29th claims of the patent application, which includes the step of heating the film at 80°C to 450°C. 一種積層體的製造方法,其將如申請專利範圍第27項~第29項中任一項所述之硬化膜的製造方法進行複數次。 A method for manufacturing a laminate, which performs the method for manufacturing a cured film described in any one of the 27th to 29th claims of the patent application multiple times. 一種半導體器件,其具有如申請專利範圍第22項或第23項所述之硬化膜、或如申請專利範圍第24項~第26項中任一項所述之積層體。 A semiconductor device having the cured film described in Claim 22 or Claim 23, or the laminate described in any one of Claims 24 to 26.
TW108102988A 2018-01-29 2019-01-25 Photosensitive resin composition, cured film, laminated body, manufacturing method of cured film, manufacturing method of laminated body, semiconductor device TWI779162B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018012586 2018-01-29
JP2018-012586 2018-01-29

Publications (2)

Publication Number Publication Date
TW201937284A TW201937284A (en) 2019-09-16
TWI779162B true TWI779162B (en) 2022-10-01

Family

ID=67394950

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108102988A TWI779162B (en) 2018-01-29 2019-01-25 Photosensitive resin composition, cured film, laminated body, manufacturing method of cured film, manufacturing method of laminated body, semiconductor device

Country Status (3)

Country Link
JP (1) JP7065120B2 (en)
TW (1) TWI779162B (en)
WO (1) WO2019146778A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8652397B2 (en) * 2010-04-09 2014-02-18 Southwire Company Ultrasonic device with integrated gas delivery system
WO2021039841A1 (en) * 2019-08-27 2021-03-04 富士フイルム株式会社 Method for producing cured film, photocurable resin composition, method for producing laminate, and method for producing semiconductor device
TW202128839A (en) * 2019-11-21 2021-08-01 日商富士軟片股份有限公司 Pattern forming method, photocurable resin composition, layered body manufacturing method, and electronic device manufacturing method
TW202219117A (en) * 2020-08-26 2022-05-16 日商富士軟片股份有限公司 Resin composition, cured product, multilayer body, method for producing cured product, and semiconductor device
CN115232017B (en) * 2021-03-15 2024-06-18 华为技术有限公司 Compound, resin and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0560349A1 (en) * 1992-03-11 1993-09-15 Fuji Photo Film Co., Ltd. Presensitized lithographic plate and process for preparation of lithographic plate
US20090191385A1 (en) * 2006-04-28 2009-07-30 Asahi Kasei Kabushiki Kaisha Photosensitive Resin Composition and Photosensitive Film
TW201602193A (en) * 2014-06-27 2016-01-16 Fujifilm Corp Thermal base generator, thermosetting resin composition, cured film, cured film manufacturing method, and semiconductor device
TW201741772A (en) * 2016-02-26 2017-12-01 富士軟片股份有限公司 Method for manufacturing laminate and method for manufacturing semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102189432B1 (en) * 2016-08-31 2020-12-11 후지필름 가부시키가이샤 Resin composition and its application

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0560349A1 (en) * 1992-03-11 1993-09-15 Fuji Photo Film Co., Ltd. Presensitized lithographic plate and process for preparation of lithographic plate
US20090191385A1 (en) * 2006-04-28 2009-07-30 Asahi Kasei Kabushiki Kaisha Photosensitive Resin Composition and Photosensitive Film
TW201602193A (en) * 2014-06-27 2016-01-16 Fujifilm Corp Thermal base generator, thermosetting resin composition, cured film, cured film manufacturing method, and semiconductor device
TW201741772A (en) * 2016-02-26 2017-12-01 富士軟片股份有限公司 Method for manufacturing laminate and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP7065120B2 (en) 2022-05-11
JPWO2019146778A1 (en) 2021-03-18
WO2019146778A1 (en) 2019-08-01
TW201937284A (en) 2019-09-16

Similar Documents

Publication Publication Date Title
TWI779162B (en) Photosensitive resin composition, cured film, laminated body, manufacturing method of cured film, manufacturing method of laminated body, semiconductor device
TWI742285B (en) Photosensitive resin composition, cured film, laminate, cured film manufacturing method and semiconductor device
WO2018151195A1 (en) Photosensitive resin composition, heterocyclic ring-containing polymer precursor, cured film, laminate, method for producing cured film, and semiconductor device
JP6808829B2 (en) Photosensitive resin compositions, polymer precursors, cured films, laminates, cured film manufacturing methods and semiconductor devices
TWI785264B (en) Photosensitive resin composition, cured film, laminate, method for producing cured film, semiconductor element, and thermal alkali generator
JP7333383B2 (en) Curable resin composition, cured film, laminate, method for producing cured film, and semiconductor device
TWI802640B (en) Photosensitive resin composition, resin, cured film, laminate, method for producing cured film, semiconductor element
CN112639616A (en) Photosensitive resin composition, cured film, laminate, method for producing cured film, and semiconductor device
JP2020154205A (en) Pattern formation method, curable resin composition, film, cured film, laminate, and semiconductor device
JP7177249B2 (en) Curable resin composition, cured film, laminate, method for producing cured film, and semiconductor device
TW202024232A (en) Resin composition, cured film, laminate, cured film production method, and semiconductor device
JP2020152857A (en) Curable resin composition, cured film, layered body, method of producing cured film, and semiconductor device
TWI797291B (en) Photosensitive resin composition, method for producing photosensitive resin composition, cured film, laminate, method for producing cured film, method for producing laminate, and semiconductor device
KR20210116541A (en) Curable resin composition, cured film, laminated body, manufacturing method of cured film, semiconductor device, and thermal base generator
JPWO2019189111A1 (en) Photosensitive resin compositions, cured films, laminates, methods for producing them, semiconductor devices, thermobase generators used in these
JP7194278B2 (en) Curable resin composition, cured film, laminate, method for producing cured film, and semiconductor device
TWI845667B (en) Curable resin composition, cured film, laminate, method for producing cured film, and semiconductor device
TW202024786A (en) Photosensitive resin composition, cured film, layered product, production method for cured film, semiconductor device, and thermal base generator
JPWO2019189112A1 (en) Method for producing laminate and composition for forming thermosetting organic film

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent