TWI778105B - Printed circuit board - Google Patents
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- TWI778105B TWI778105B TW107125944A TW107125944A TWI778105B TW I778105 B TWI778105 B TW I778105B TW 107125944 A TW107125944 A TW 107125944A TW 107125944 A TW107125944 A TW 107125944A TW I778105 B TWI778105 B TW I778105B
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- insulating layer
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- printed circuit
- circuit board
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- 238000000034 method Methods 0.000 description 13
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- 229910000765 intermetallic Inorganic materials 0.000 description 12
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- 229910052802 copper Inorganic materials 0.000 description 9
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- 239000010936 titanium Substances 0.000 description 8
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- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
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- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- 239000004642 Polyimide Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 239000004843 novolac epoxy resin Substances 0.000 description 3
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
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- 125000002723 alicyclic group Chemical group 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
Abstract
Description
以下說明是有關於一種印刷電路板。 The following description is about a printed circuit board.
隨著長期演進(long term evolution,LTE)服務的實施,正在開發一種將應用處理器(application processor,AP)、雙工器(duplex)及射頻(radio frequency,RF)開關模組化的複雜通訊模組。另外,隨著物聯網(Internet of Things,IoT)技術的發展,複雜通訊模組被與感測器組合於一起。複雜通訊模組中所使用的基板可為無核心基板(coreless substrate)。在無核心基板的情形中,基板可利用載體、藉由漸成式積層方法(sequential lamination method)而形成為多層式基板。作為另一選擇,可單獨地製造單個基板並接著將所有單個基板壓縮於一起。 With the implementation of long term evolution (LTE) services, a complex communication is being developed that modularizes an application processor (AP), a duplex (duplex), and a radio frequency (RF) switch module. In addition, with the development of Internet of Things (Internet of Things, IoT) technology, complex communication modules are combined with sensors. The substrates used in complex communication modules may be coreless substrates. In the case of a coreless substrate, the substrate may be formed as a multilayer substrate by a sequential lamination method using a carrier. Alternatively, the individual substrates can be fabricated separately and then all of the individual substrates compressed together.
韓國專利第10-0734234號闡述一種印刷電路板的實例。 Korean Patent No. 10-0734234 describes an example of a printed circuit board.
本發明的目標是提供一種具有極佳層間結合強度的印刷電路板。 An object of the present invention is to provide a printed circuit board with excellent interlayer bonding strength.
根據本發明的態樣,提供一種印刷電路板,所述印刷電路板包括:絕緣層,所述絕緣層的底表面中嵌置有金屬接墊;金 屬通孔,穿透所述絕緣層且形成於所述金屬接墊上,以及低熔點金屬層,形成於所述金屬通孔的上部部分上且具有較所述金屬通孔的熔點低的熔點,其中所述金屬接墊的底表面凹陷超過所述絕緣層的所述底表面。 According to an aspect of the present invention, there is provided a printed circuit board, the printed circuit board comprising: an insulating layer, metal pads are embedded in the bottom surface of the insulating layer; gold a metal through hole penetrates the insulating layer and is formed on the metal pad, and a low melting point metal layer is formed on the upper part of the metal through hole and has a melting point lower than that of the metal through hole, wherein the bottom surface of the metal pad is recessed beyond the bottom surface of the insulating layer.
根據本發明的另一態樣,提供一種印刷電路板,所述印刷電路板包括:第一絕緣層,所述第一絕緣層的底表面中嵌置有第一金屬接墊;金屬凸塊,穿透所述第一絕緣層且形成於所述第一金屬接墊的上部部分上;第二絕緣層,形成於所述第一絕緣層上,且所述第二絕緣層的底表面中嵌置有第二金屬接墊,其中所述第二金屬接墊的底表面凹陷超過所述第二絕緣層的所述底表面,且其中所述金屬凸塊的上表面接觸所述第二金屬接墊的所述底表面。 According to another aspect of the present invention, a printed circuit board is provided, the printed circuit board includes: a first insulating layer, a bottom surface of the first insulating layer is embedded with a first metal pad; a metal bump, penetrate the first insulating layer and be formed on the upper portion of the first metal pad; a second insulating layer is formed on the first insulating layer and embedded in the bottom surface of the second insulating layer A second metal pad is disposed, wherein the bottom surface of the second metal pad is recessed beyond the bottom surface of the second insulating layer, and wherein the upper surface of the metal bump contacts the second metal pad the bottom surface of the pad.
根據本發明的另一態樣,提供一種印刷電路板,所述印刷電路板包括:第一絕緣層,所述第一絕緣層中嵌置有第一金屬接墊;金屬凸塊,穿透所述第一絕緣層且形成於所述第一金屬接墊的上部部分上;以及第二絕緣層,形成於所述第一絕緣層上,且所述第二絕緣層中嵌置有第二金屬接墊,其中所述金屬凸塊穿透所述第二絕緣層,且所述金屬凸塊的上表面接觸所述第二金屬接墊的底表面。 According to another aspect of the present invention, there is provided a printed circuit board, the printed circuit board includes: a first insulating layer, in which a first metal pad is embedded; and a metal bump penetrating all the the first insulating layer is formed on the upper portion of the first metal pad; and the second insulating layer is formed on the first insulating layer, and a second metal is embedded in the second insulating layer A pad, wherein the metal bump penetrates the second insulating layer, and the upper surface of the metal bump contacts the bottom surface of the second metal pad.
藉由閱讀以下詳細說明、圖式及申請專利範圍,其他特徵及態樣將顯而易見。 Other features and aspects will be apparent from a reading of the following detailed description, drawings and claims.
100:絕緣層/第一絕緣層 100: insulating layer/first insulating layer
100’:開口 100': opening
110:金屬接墊/第一金屬接墊 110: Metal Pad/First Metal Pad
111、131、211:凹陷空間/凹陷部 111, 131, 211: Recessed space/recessed part
120、220:金屬凸塊 120, 220: Metal bumps
121、221:金屬通孔 121, 221: metal through hole
122、222:低熔點金屬層 122, 222: low melting point metal layer
130、230:電路 130, 230: Circuits
200:絕緣層/第二絕緣層 200: insulating layer/second insulating layer
210:第二金屬接墊 210: Second metal pad
300:絕緣層/第三絕緣層 300: insulating layer/third insulating layer
310:第三金屬接墊 310: Third metal pad
C:載體 C: carrier
C1:載體構件 C1: Carrier component
C2:載體金屬箔/晶種金屬層 C2: carrier metal foil/seed metal layer
P:電路圖案層 P: circuit pattern layer
圖1示出印刷電路板的實例。 FIG. 1 shows an example of a printed circuit board.
圖2示出印刷電路板的另一實例。 FIG. 2 shows another example of a printed circuit board.
圖3至圖10是示出製造印刷電路板的方法中所使用的各示例性製程的剖視圖。 3 to 10 are cross-sectional views illustrating exemplary processes used in a method of manufacturing a printed circuit board.
在所有圖式及詳細說明全文中,相同的圖式編號指代相同的元件。各圖式可能並非按比例繪製,且為清晰、示出及方便起見,可誇大圖式中的元件的相對大小、比例及繪示。 Throughout the drawings and the detailed description, the same drawing numbers refer to the same elements. The figures may not be drawn to scale and the relative sizes, proportions, and depiction of elements in the figures may be exaggerated for clarity, illustration, and convenience.
提供以下詳細說明是為了幫助讀者獲得對本文中所述方法、設備及/或系統的全面理解。然而,對於此項技術中具有通常知識者而言,本文中所述方法、設備及/或系統的各種改變、潤飾及等效形式將顯而易見。本文中所述操作順序僅為實例,且並非僅限於本文中所提及的該些操作順序,而是如對於此項技術中具有通常知識者而言將顯而易見,除必定以特定次序出現的操作以外,均可有所改變。此外,為提高清晰性及明確性,可省略對對於此項技術中具有通常知識者而言眾所習知的功能及構造的說明。 The following detailed description is provided to assist the reader in gaining a comprehensive understanding of the methods, apparatus and/or systems described herein. However, various changes, modifications and equivalents of the methods, apparatus and/or systems described herein will be apparent to those skilled in the art. The sequences of operations described herein are examples only, and are not limited to those mentioned herein, but, as will be apparent to those of ordinary skill in the art, except that operations necessarily occur in a particular order Other than that, it can be changed. Also, descriptions of functions and constructions that are well known to those skilled in the art may be omitted for increased clarity and clarity.
本文中所述特徵可被實施為不同形式,且不應被解釋為僅限於本文中所述實例。確切而言,提供本文中所述實例是為了使此揭露內容將透徹及完整,並將向此項技術中具有通常知識者傳達本發明的全部範圍。 Features described herein may be implemented in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein are provided so that this disclosure will be thorough and complete, and will convey the full scope of the invention to those skilled in the art.
除非另有定義,否則本文中所使用的全部用語(包括技術用語及科學用語)的含義均與其被本發明所屬技術中具有通常知識者所通常理解的含義相同。在常用字典中所定義的任何用語應被解釋為具有與在相關技術的上下文中的含義相同的含義,且除非另有明確定義,否則不應將其解釋為具有理想化或過於正式的含義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Any term defined in a commonly used dictionary should be interpreted as having the same meaning as in the context of the related art, and unless explicitly defined otherwise, it should not be interpreted as having an idealized or overly formal meaning.
無論圖號如何,將對相同的或對應的組件給定相同的參考編號,且將不再對相同的或對應的組件予以贅述。在本發明的說明通篇中,當闡述特定相關傳統技術確定與本發明的觀點無關時,將省略有關詳細說明。在闡述各種組件時可使用例如「第一(first)」及「第二(second)」等用語,但以上組件不應僅限於以上用語。以上用語僅用於區分各個組件。在所附圖式中,可誇大、省略或簡要示出一些組件,且組件的尺寸未必反映該些組件的實際尺寸。 Regardless of the figure numbers, the same or corresponding components will be given the same reference numbers, and the same or corresponding components will not be repeatedly described. Throughout the description of the present invention, when the description of a specific related conventional art is determined to be irrelevant to the viewpoint of the present invention, the detailed description thereof will be omitted. Terms such as "first" and "second" may be used when describing various components, but the above components should not be limited to the above terms. The above terms are only used to distinguish the various components. In the accompanying drawings, some components may be exaggerated, omitted, or briefly shown, and the dimensions of the components do not necessarily reflect the actual dimensions of the components.
在下文中,將參照所附圖式來詳細闡述本發明的特定實施例。 Hereinafter, specific embodiments of the present invention will be explained in detail with reference to the accompanying drawings.
圖1示出印刷電路板的實例。圖2示出印刷電路板的另一實例。圖3至圖10是示出製造印刷電路板的方法中所使用的各示例性製程的剖視圖。 FIG. 1 shows an example of a printed circuit board. FIG. 2 shows another example of a printed circuit board. 3 to 10 are cross-sectional views illustrating exemplary processes used in a method of manufacturing a printed circuit board.
參照圖9,根據本發明實施例的印刷電路板包括絕緣層100、金屬接墊110及金屬凸塊120。如圖1或圖2中所示,該些單個印刷電路板被積層於一起以形成多層式印刷電路板
(mutlilayer printed circuit board)。
Referring to FIG. 9 , a printed circuit board according to an embodiment of the present invention includes an
絕緣層100是由例如樹脂等絕緣材料形成且為板型。絕緣層100的樹脂可為例如熱固性樹脂及熱塑性樹脂等各種材料,且具體而言可為環氧樹脂或聚醯亞胺。環氧樹脂的實例包括萘環氧樹脂(naphthalene epoxy resin)、雙酚A型環氧樹脂(bisphenol A type epoxy resin)、雙酚F型環氧樹脂(bisphenol F type epoxy resin)、酚醛清漆環氧樹脂(novolac epoxy resin)、甲酚酚醛清漆環氧樹脂(cresol novolak epoxy resin)、橡膠改質環氧樹脂(rubber modified epoxy resin)、脂環族環氧樹脂(cycloaliphatic epoxy resin)、矽系環氧樹脂(silicon-based epoxy resin)、氮系環氧樹脂(nitrogen-based epoxy resin)、磷系環氧樹脂(phosphorus-based epoxy resin)等。然而,其並非僅限於此。
The
絕緣層100可包括加強材料(reinforcing material),且所述加強材料可為例如玻璃布(glass cloth)、二氧化矽等無機填料。絕緣層100可為含有玻璃纖維的預浸體(prepreg,PPG)或含有無機填料的增層膜。可使用味之素增層膜(Ajinomoto Build-up Film,ABF)等作為此種增層膜。
The
絕緣層100可由具有低介電常數Dk及低介電正切(dielectric tangent)Df的材料形成,所述材料例如為液晶聚合物(liquid crystal polymer,LCP)、聚四氟乙烯(polytetrafluoroethylene,PTFE)、聚苯醚(polyphenylene ether,PPE)、環烯烴聚合物(cyclo olefin polymer,COP)、全氟烷氧基
(perfluoroalkoxy,PFA)等。
The
絕緣層100亦可由例如感光成像介電(photoimageable dielectric,PID)等感光性材料形成。
The
金屬接墊110嵌置於絕緣層100的底表面中且連接至隨後欲闡述的電路130。此處「嵌置於底表面中」意指金屬接墊110的底表面被插入絕緣層100中以暴露至絕緣層100的底表面。亦即,金屬接墊110被插入絕緣層100中,但金屬接墊110的底表面被暴露出。
The
金屬接墊110可由例如銅(Cu)、鈀(Pd)、鋁(Al)、鎳(Ni)、鈦(Ti)、金(Au)、鉑或其合金等金屬形成。
The
金屬接墊110的底表面凹陷超過絕緣層100的底表面。亦即,金屬接墊110的底表面相較於絕緣層100的底表面而言更進入絕緣層100內部。在金屬接墊110的底表面與絕緣層100的底表面之間形成台階高度(step-height)。設置有被金屬接墊110的底表面及絕緣層100環繞的預定空間。此種空間可稱作凹陷空間或凹陷部。
The bottom surface of the
金屬接墊110的底表面可處於其中粗糙度Ra幾乎為零的低粗糙度或無粗糙度狀態。舉例而言,金屬接墊110的底表面的粗糙度Ra可小於0.1。
The bottom surface of the
電路130物理性地連接至且電性連接至金屬接墊110且根據設計而被圖案化以傳輸電性訊號。電路130變為用於傳輸電性訊號的線路,且金屬接墊110變為所述線路的端子。金屬接墊
110的寬度(面積)可被形成為大於電路130的寬度(面積)。
The
電路130亦嵌置於絕緣層100的底表面中且電路130的底表面凹陷超過絕緣層100的底表面,以使電路130的底表面中形成凹陷空間或凹陷部131。
The
電路130亦可由例如銅(Cu)、鈀(Pd)、鋁(Al)、鎳(Ni)、鈦(Ti)、金(Au)、鉑(Pt)或其合金等金屬形成。
The
金屬凸塊120穿透絕緣層100且形成於金屬接墊110的上部部分上。金屬凸塊120可藉由以金屬材料填充在絕緣層100中形成的開口而形成,以位於金屬接墊110上方。金屬凸塊120可被形成為例如圓柱或多角柱等柱狀形狀。金屬凸塊120的底表面可接觸金屬接墊110的上表面,且金屬凸塊120的上端部可突出超過絕緣層100的上表面。
The metal bumps 120 penetrate the insulating
金屬凸塊120可形成為兩個層。亦即,金屬凸塊120可由金屬通孔121與低熔點金屬層122形成。金屬通孔121的熔點高於低熔點金屬層122的熔點。
The metal bumps 120 may be formed in two layers. That is, the metal bumps 120 may be formed by the
金屬通孔121是由具有相對高的熔點(相較於低熔點金屬層122而言)的金屬製成,且是由例如銅(Cu)等金屬形成。金屬通孔121可佔金屬凸塊120的大部分。金屬通孔121可藉由鍍覆(plating)等形成。
The metal via 121 is made of a metal having a relatively high melting point (compared to the low melting point metal layer 122 ), and is formed of a metal such as copper (Cu). The
低熔點金屬層122形成於金屬通孔121的上部部分上且是由例如錫(Sn)等具有相對低的熔點的金屬製成。低熔點金屬層122可藉由鍍覆等形成。
The low melting
金屬通孔121可佔金屬凸塊120的大部分,且低熔點金屬層122可以相對小的體積形成於金屬通孔121的上部部分上。在此種情形中,低熔點金屬層122的厚度可小於金屬通孔121的厚度。
The
低熔點金屬層122可突出超過絕緣層100的上表面。金屬通孔121的上表面可與絕緣層100的上表面在位置上重合,或者可位於絕緣層100的上表面之下。然而,並非僅限於此。
The low melting
金屬凸塊120的上表面(特別是低熔點金屬層122的上表面)可處於其中粗糙度Ra幾乎為零的低粗糙度或無粗糙度狀態。舉例而言,低熔點金屬層122的上表面的粗糙度Ra可小於0.1。
The upper surface of the metal bump 120 (especially the upper surface of the low melting point metal layer 122 ) may be in a low-roughness or no-roughness state in which the roughness Ra is almost zero. For example, the roughness Ra of the upper surface of the low melting
如圖9中所示,在積層前的單個印刷電路板中,低熔點金屬層122的橫截面積與金屬通孔121的橫截面積可實質上相同。
As shown in FIG. 9 , in a single printed circuit board before lamination, the cross-sectional area of the low melting
參照圖1,根據本發明實施例的印刷電路板包括堆疊於彼此上方的多個絕緣層100、200、300、…。現將闡述所述多個絕緣層中彼此相鄰的絕緣層100與200。以下所述特徵可適用於全部絕緣層或者適用於由多個絕緣層構成的印刷電路板中的絕緣層的一部分。
1, a printed circuit board according to an embodiment of the present invention includes a plurality of insulating
根據本發明實施例的印刷電路板包括第一絕緣層100、第一金屬接墊110、金屬凸塊120、第二絕緣層200及第二金屬接墊210。
The printed circuit board according to the embodiment of the present invention includes a first insulating
第一絕緣層100及第二絕緣層200是由例如樹脂等絕緣
材料形成且為板型。第一絕緣層100及第二絕緣層200的樹脂可為例如熱固性樹脂及熱塑性樹脂等各種材料,且具體而言可為環氧樹脂或聚醯亞胺。環氧樹脂的實例包括萘環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆環氧樹脂、甲酚酚醛清漆環氧樹脂、橡膠改質環氧樹脂、脂環族環氧樹脂、矽系環氧樹脂、氮系環氧樹脂、磷系環氧樹脂等。然而,其並非僅限於此。
The first insulating
第一絕緣層100及第二絕緣層200可包含加強材料,且所述加強材料可為例如玻璃布、二氧化矽等無機填料。
The first insulating
第一絕緣層100及第二絕緣層200可由具有低介電常數Dk及低介電正切Df的材料形成,所述材料例如為液晶聚合物(LCP)、聚四氟乙烯(PTFE)、聚苯醚(PPE)、環烯烴聚合物(COP)、全氟烷氧基(PFA)等。
The first insulating
第一絕緣層100及第二絕緣層200亦可由例如感光成像介電(PID)等感光性材料形成。
The first insulating
第一絕緣層100與第二絕緣層200可由相同材料或不同材料形成。
The first insulating
第一絕緣層100的底表面中嵌置有第一金屬接墊110,且第二絕緣層200的底表面中嵌置有第二金屬接墊210。
The
第一金屬接墊110的底表面凹陷超過第一絕緣層100的底表面所凹陷的程度。亦即,第一金屬接墊110的底表面相較於第一絕緣層100的底表面而言更進入第一絕緣層100內部。在第一金屬接墊110的底表面與第一絕緣層100的底表面之間形成台
階高度。設置有被金屬接墊110的底表面與絕緣層100環繞的凹陷空間或凹陷部111。
The bottom surface of the
第二金屬接墊210的底表面凹陷超過第二絕緣層200的底表面。亦即,第二金屬接墊210的底表面相較於第二絕緣層200的底表面而言更進入第二絕緣層200內部。在第二金屬接墊210的底表面與第二絕緣層200的底表面之間形成台階高度。設置有被第二金屬接墊210的底表面與第二絕緣層200環繞的凹陷空間或凹陷部211。
The bottom surface of the
第一金屬接墊110及第二金屬接墊210可由例如銅(Cu)、鈀(Pd)、鋁(Al)、鎳(Ni)、鈦(Ti)、金(Au)、鉑(Pt)或其合金等金屬形成。
The
第一金屬接墊110的底表面及第二金屬接墊210的底表面可處於其中粗糙度Ra幾乎為零的低粗糙度或無粗糙度狀態。舉例而言,第一金屬接墊110的底表面及第二金屬接墊210的底表面的粗糙度Ra可小於0.1。
The bottom surface of the
金屬凸塊120穿透第一絕緣層100且形成於第一金屬接墊110上。金屬凸塊120可藉由以金屬材料填充在第一絕緣層100中形成的開口而形成,以位於第一金屬接墊110上方。金屬凸塊120可被形成為例如圓柱或多角柱等柱狀形狀。
The metal bumps 120 penetrate the first insulating
金屬凸塊120可形成為兩個層。亦即,金屬凸塊120可由金屬通孔121與低熔點金屬層122形成。金屬通孔121的熔點高於低熔點金屬層122的熔點。
The metal bumps 120 may be formed in two layers. That is, the metal bumps 120 may be formed by the
金屬通孔121是由例如銅(Cu)等具有相對高的熔點(相較於低熔點金屬層122而言)的金屬製成。金屬通孔121可佔金屬凸塊120的大部分。金屬通孔121可藉由鍍覆等形成。
The metal via 121 is made of a metal having a relatively high melting point (compared to the low melting point metal layer 122 ), such as copper (Cu). The
低熔點金屬層122形成於金屬通孔121的上部部分上且是由例如錫(Sn)等具有相對低的熔點的金屬製成。低熔點金屬層122可藉由鍍覆等形成。
The low melting
金屬通孔121可佔金屬凸塊120的大部分,且低熔點金屬層122可以相對小的體積形成於金屬通孔121的上部部分上。在此種情形中,低熔點金屬層122的厚度可小於金屬通孔121的厚度。
The
金屬凸塊120的上表面接觸第二金屬接墊210的底表面。由於第二金屬接墊210的底表面凹陷超過第二絕緣層200的底表面,因此金屬凸塊120的上表面位於第二絕緣層200的底表面上方。在此種情形中,金屬凸塊120的上表面接觸第二金屬接墊210的底表面,且具體而言,低熔點金屬層122的上表面接觸第二金屬接墊210的底表面。
The upper surface of the
金屬凸塊120與第二金屬接墊210之間的接觸面積小於第二金屬接墊210的底表面的面積。具體而言,低熔點金屬層122與第二金屬接墊210之間的接觸面積小於第二金屬接墊210的底表面的面積。在此種情形中,第二金屬接墊210的底表面的不接觸低熔點金屬層122的區接觸第一絕緣層100。此可為當個別的基板積層於一起時位置較低的第一絕緣層100流動至凹陷空間或凹
陷部211中的結果。
The contact area between the
低熔點金屬層122可在積層期間在側向上流動,且積層之後的面積大於積層之前的面積。如圖9中所示,即使積層之前在單個印刷電路板中低熔點金屬層122的橫截面積與金屬通孔121的橫截面積實質上相同,積層之後低熔點金屬層122的橫截面積仍可大於金屬通孔121的橫截面積。
The low melting
低熔點金屬層122不覆蓋第二金屬接墊210的整個底表面,而是覆蓋第二金屬接墊210的底表面的僅一部分。第二金屬接墊210的底表面的其餘部分可被第一絕緣層100覆蓋。
The low melting
當多個層在高溫環境中以其中第二金屬接墊210接觸低熔點金屬層122的狀態積層於一起時,由於第二金屬接墊210與低熔點金屬層122之間形成金屬間化合物(intermetallic compound,IMC),因此在第二金屬接墊210與低熔點金屬層122之間可形成Cu3Sn或Cu6Sn的層。具體而言,當在壓力下以高於低熔點金屬層122的熔點的溫度執行對多個層的積層時,在其中低熔點金屬層122熔化且金屬通孔121不熔化的狀態中,第二金屬接墊210與低熔點金屬層122之間形成IMC。當藉由適合地提供高壓、以低於低熔點金屬層122的熔點的溫度執行積層時,在其中低熔點金屬層122熔化且金屬通孔121不熔化的狀態中,第二金屬接墊210與低熔點金屬層122之間可形成IMC。在後一種情形中,可能不出現空隙(void)。
When a plurality of layers are stacked together in a state in which the
此外,金屬凸塊120的上表面(特別是低熔點金屬層122
的上表面)可處於其中粗糙度Ra幾乎為零的低粗糙度或無粗糙度狀態。舉例而言,低熔點金屬層122的上表面的粗糙度(Ra)可小於0.1。當第二金屬接墊210的底表面及低熔點金屬層122的上表面的粗糙度低時,在積層期間在第二金屬接墊210與低熔點金屬層122之間會形成精確的IMC且第二金屬接墊210與低熔點金屬層122之間形成空隙的情況可減少。如此一來,層間黏合強度及可靠性可提高。
In addition, the upper surfaces of the metal bumps 120 (especially the low melting point metal layer 122
) may be in a low-roughness or no-roughness state in which the roughness Ra is almost zero. For example, the roughness (Ra) of the upper surface of the low melting
包括金屬通孔221以及低熔點金屬層222的金屬凸塊220亦在第二絕緣層200中形成於第二金屬接墊210上且因此能夠連接至在第二絕緣層200上形成的第三絕緣層300的第三金屬接墊310。亦即,多個絕緣層之上可重覆形成金屬凸塊與金屬接墊之間的密切結合關係。
The metal bumps 220 including the
位於最上層上的絕緣層上可形成有電路圖案層P。由例如金或鎳等金屬製成的表面處理層可被形成在電路圖案層P的表面的一部分上。儘管圖式中未示出,亦可向位於最上層及最下層處的絕緣層塗覆阻焊劑(solder resist)。 A circuit pattern layer P may be formed on the insulating layer on the uppermost layer. A surface treatment layer made of metal such as gold or nickel may be formed on a portion of the surface of the circuit pattern layer P. As shown in FIG. Although not shown in the drawings, a solder resist may also be applied to the insulating layers at the uppermost and lowermost layers.
參照圖2,根據本發明實施例的印刷電路板包括堆疊於彼此上方的多個絕緣層100、200、300、…。現將闡述所述多個絕緣層中彼此相鄰的絕緣層100與200。以下所述特徵可適用於全部絕緣層或者適用於由所述多個絕緣層構成的印刷電路板中的所述多個絕緣層的一部分。
2, a printed circuit board according to an embodiment of the present invention includes a plurality of insulating
根據本發明實施例的印刷電路板包括第一絕緣層100、
第一金屬接墊110、金屬凸塊120、第二絕緣層200及第二金屬接墊210。
The printed circuit board according to the embodiment of the present invention includes the first insulating
第一絕緣層100及第二絕緣層200是由例如樹脂等絕緣材料形成且為板型。第一絕緣層100及第二絕緣層200的樹脂可為例如熱固性樹脂及熱塑性樹脂等各種材料,且具體而言可為環氧樹脂或聚醯亞胺。環氧樹脂的實例包括萘環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆環氧樹脂、甲酚酚醛清漆環氧樹脂、橡膠改質環氧樹脂、脂環族環氧樹脂、矽系環氧樹脂、氮系環氧樹脂、磷系環氧樹脂等。然而,其並非僅限於此。
The first insulating
第一絕緣層100及第二絕緣層200可包含加強材料,且所述加強材料可為例如玻璃布、二氧化矽等無機填料。
The first insulating
第一絕緣層100及第二絕緣層200可由具有低介電常數Dk及低介電正切Df的材料形成,所述材料例如為液晶聚合物(LCP)、聚四氟乙烯(PTFE)、聚苯醚(PPE)、環烯烴聚合物(COP)、全氟烷氧基(PFA)等。
The first insulating
第一絕緣層100及第二絕緣層200可由例如感光成像介電(PID)等感光性材料形成。
The first insulating
第一絕緣層100與第二絕緣層200可由相同材料或不同材料形成。
The first insulating
第一絕緣層100中嵌置有第一金屬接墊110,且第二絕緣層200中嵌置有第二金屬接墊210。
A
由於金屬接墊110嵌置於絕緣層100「內部」,因此金屬
接墊110的上表面及底表面不經由絕緣層100的上表面及底表面暴露出。在前一實施例(參見圖1)中,金屬接墊110的底表面經由絕緣層100的底表面暴露出是因為金屬接墊110嵌置於絕緣層100的底表面中。在此實施例中,金屬接墊110的上表面及底表面不被暴露出是因為其位於絕緣層100內部。
Since the
第一金屬接墊110及第二金屬接墊210可由例如銅(Cu)、鈀(Pd)、鋁(Al)、鎳(Ni)、鈦(Ti)、金(Au)、鉑(Pt)或其合金等金屬形成。
The
第一金屬接墊110的底表面及第二金屬接墊210的底表面可處於其中粗糙度Ra幾乎為零的低粗糙度或無粗糙度狀態。舉例而言,第一金屬接墊110的底表面及第二金屬接墊210的底表面的粗糙度可小於0.1。
The bottom surface of the
金屬凸塊120穿透第一絕緣層100且形成於第一金屬接墊110上。金屬凸塊120可藉由以金屬材料填充在第一絕緣層100中形成的開口而形成,以位於第一金屬接墊110上方。金屬凸塊120可被形成為例如圓柱或多角柱等柱狀形狀。
The metal bumps 120 penetrate the first insulating
金屬凸塊120的底表面可接觸第一金屬接墊110的上表面,且金屬凸塊120的上表面可突出超過第一絕緣層100的上表面。
The bottom surface of the
金屬凸塊120的上表面穿透第二絕緣層200,且金屬凸塊120的上表面接觸第二金屬接墊210的底表面。
The upper surface of the
金屬凸塊120可形成為兩個層。亦即,金屬凸塊120可
由金屬通孔121與低熔點金屬層122形成。金屬通孔121的熔點高於低熔點金屬層122的熔點。
The metal bumps 120 may be formed in two layers. That is, the metal bumps 120 may be
It is formed by the metal through
金屬通孔121可由例如銅(Cu)等具有相對高的熔點(相較於低熔點金屬層122而言)的金屬製成。金屬通孔121可佔金屬凸塊120的大部分。金屬通孔121可藉由鍍覆等形成。
The metal via 121 may be made of a metal having a relatively high melting point (compared to the low melting point metal layer 122 ), such as copper (Cu). The
低熔點金屬層122形成於金屬通孔121的上部部分上且是由例如錫(Sn)等具有相對低的熔點的金屬製成。低熔點金屬層122可藉由鍍覆等形成。
The low melting
金屬通孔121可佔金屬凸塊120的大部分,且低熔點金屬層122可以相對小的體積形成於金屬通孔121的上部部分上。在此種情形中,低熔點金屬層122的厚度可小於金屬通孔121的厚度。
The
金屬凸塊120與第二金屬接墊210之間的接觸面積小於第二金屬接墊210的底表面的面積。具體而言,低熔點金屬層122與第二金屬接墊210之間的接觸面積小於第二金屬接墊210的底表面的面積。在此種情形中,第二金屬接墊210的底表面的不接觸低熔點金屬層122的區接觸第二絕緣層200。此可為當將個別的基板積層於一起時位於下側上的第二絕緣層200流動至凹陷空間或凹陷部中的結果。
The contact area between the
低熔點金屬層122可在積層期間在側向上流動,且積層之後的面積大於積層之前的面積。如圖9中所示,即使積層之前在單個印刷電路板中低熔點金屬層122的橫截面積與金屬通孔
121的橫截面積實質上相同,積層之後低熔點金屬層122的橫截面積仍可大於金屬通孔121的橫截面積。
The low melting
低熔點金屬層122不覆蓋第二金屬接墊210的整個底表面,而是覆蓋第二金屬接墊210的底表面的僅一部分。第二金屬接墊210的底表面的其餘部分可被第二絕緣層200覆蓋。
The low melting
當多個層在高溫環境中以其中第二金屬接墊210接觸低熔點金屬層122的狀態積層於一起時,由於第二金屬接墊210與低熔點金屬層122之間形成金屬間化合物(IMC),因此在第二金屬接墊210與低熔點金屬層122之間可形成Cu3Sn或Cu6Sn的層。具體而言,當在壓力下以高於低熔點金屬層122的熔點的溫度執行對多個層的積層時,在其中低熔點金屬層122熔化且金屬通孔121不熔化的狀態中,第二金屬接墊210與低熔點金屬層122之間形成IMC。當藉由適合地提供高壓、以低於低熔點金屬層122的熔點的溫度執行積層時,在其中低熔點金屬層122熔化且金屬通孔121不熔化的狀態中,第二金屬接墊210與低熔點金屬層122之間可形成IMC。在後一種情形中,可能不出現空隙。
When a plurality of layers are stacked together in a state in which the
此外,金屬凸塊120的上表面(特別是低熔點金屬層122的上表面)可處於其中粗糙度Ra幾乎為零的低粗糙度或無粗糙度狀態。舉例而言,低熔點金屬層122的上表面的粗糙度(Ra)可小於0.1。當第二金屬接墊210的底表面及低熔點金屬層122的上表面的粗糙度低時,在積層期間在第二金屬接墊210與低熔點金屬層122之間會形成精確的IMC且第二金屬接墊210與低熔點金
屬層122之間形成空隙的情況可減少。如此一來,層間黏合強度及可靠性可提高。
In addition, the upper surface of the metal bump 120 (especially the upper surface of the low melting point metal layer 122 ) may be in a low-roughness or no-roughness state in which the roughness Ra is almost zero. For example, the roughness (Ra) of the upper surface of the low melting
金屬凸塊220亦在第二絕緣層200中形成於第二金屬接墊210上且因此能夠連接至在第二絕緣層200上形成的第三絕緣層300的第三金屬接墊310。亦即,多個絕緣層之上可重覆形成金屬凸塊與金屬接墊之間的密切結合關係。
The metal bumps 220 are also formed in the second insulating
位於最上層上的絕緣層上可形成有電路圖案層P。由例如金或鎳等金屬製成的表面處理層可被形成在電路圖案層P的表面的一部分上。儘管圖式中未示出,亦可向位於最上層及最下層處的絕緣層塗覆阻焊劑。 A circuit pattern layer P may be formed on the insulating layer on the uppermost layer. A surface treatment layer made of metal such as gold or nickel may be formed on a portion of the surface of the circuit pattern layer P. As shown in FIG. Although not shown in the drawings, a solder resist may also be applied to the insulating layers at the uppermost and lowermost layers.
將參照所附圖3至圖10闡述製造以上印刷電路板的方法。 A method of manufacturing the above printed circuit board will be explained with reference to accompanying drawings 3 to 10 .
參照圖3,製備載體C。載體C是由載體構件C1及載體金屬箔C2構成。載體金屬箔C2包括晶種金屬層。 Referring to Figure 3, a carrier C was prepared. The carrier C is composed of a carrier member C1 and a carrier metal foil C2. The carrier metal foil C2 includes a seed metal layer.
參照圖4,在載體C上形成電路130及金屬接墊110。電路130及金屬接墊110形成於載體C的晶種金屬層C2上且是藉由電解鍍覆方法(electrolytic plating method)而形成。電路130與金屬接墊110可由與晶種金屬層C2相同的金屬形成。
Referring to FIG. 4 , the
參照圖5,形成絕緣層100,且在絕緣層100中形成開口100’。當絕緣層100為感光性的時,可藉由微影製程形成開口100’,但並非僅限於此。
5, an insulating
參照圖6,在開口100’中形成金屬通孔121。可藉由鍍
覆方法形成金屬通孔121。
Referring to FIG. 6, a metal via 121 is formed in the
參照圖7,在金屬通孔121上形成低熔點金屬層122以提供金屬凸塊120。低熔點金屬層122可藉由鍍覆方法形成且突出超過絕緣層100。
Referring to FIG. 7 , a low melting
參照圖8,將絕緣層100自載體C分離,且使載體C的晶種金屬層C2保留在絕緣層100上。
Referring to FIG. 8 , the insulating
參照圖9,移除晶種金屬層C2,且可藉由蝕刻等移除晶種金屬層C2。具體而言,當晶種金屬層C2、電路130及金屬接墊110由相同的材料形成時,隨著晶種金屬層C2藉由蝕刻而被移除,電路130的底表面的一部分及金屬接墊110的底表面的一部分可被移除。如此一來,在電路130的底表面及金屬接墊110的底表面中設置有凹陷空間或凹陷部111、131。可提供藉由一系列製程而形成的多個單層式印刷電路板。
9, the seed metal layer C2 is removed, and the seed metal layer C2 may be removed by etching or the like. Specifically, when the seed metal layer C2, the
參照圖10,可藉由其中在高溫環境下對多個單層式印刷電路板進行積層及按壓的批量積層方法(batch lamination method)形成多層式印刷電路板。此處,當位於相鄰的所述兩個絕緣層100與200之下的絕緣層100流動至凹陷空間或凹陷部211中時,如參照圖1所述提供多層式印刷電路板。另一方面,當位於相鄰的所述兩個絕緣層100與200上方的絕緣層200流動至凹陷空間或凹陷部211中時,如參照圖2所述提供多層式印刷電路板。
Referring to FIG. 10 , a multilayer printed circuit board may be formed by a batch lamination method in which a plurality of single-layer printed circuit boards are laminated and pressed in a high temperature environment. Here, when the insulating
如圖10中所示,可在位於最上層上的絕緣層上形成單個電路圖案層P且所述單個電路圖案層P能夠被積層於一起。在 此種情形中,可使用一種在形成包括電路圖案層P的金屬層之後移除所述金屬層的除電路圖案層P以外的不必要部分的方法。 As shown in FIG. 10 , a single circuit pattern layer P may be formed on the insulating layer on the uppermost layer and the single circuit pattern layers P can be laminated together. exist In this case, a method of removing unnecessary portions of the metal layer other than the circuit pattern layer P after forming the metal layer including the circuit pattern layer P may be used.
另外,批量積層中提供的高溫環境可為較金屬凸塊120的低熔點金屬層122的熔點高的溫度或者為低溫。具體而言,當以低於低熔點金屬層122的熔點的溫度提供適宜的高壓環境時,IMC充分地形成在低熔點金屬層122與金屬接墊110之間,且可能不出現空隙。
In addition, the high temperature environment provided in the batch build-up may be a temperature higher than the melting point of the low melting
儘管本發明包括特定實例,然而對於此項技術中具有通常知識者而言將顯而易見,在不背離申請專利範圍及其等效範圍的精神及範圍的條件下,可在該些實例中作出各種形式及細節上的變化。本文中所述實例應被視作僅用於說明意義,而非用於限制。對每一實例中的特徵或態樣的說明應被視作適用於其他實例中的相似特徵或態樣。若以不同的次序執行所述技術及/或若以不同的方式對所述系統、架構、裝置或電路中的組件加以組合及/或以其他組件或其等效組件進行替換或補充,則可達成適合的結果。因此,本發明的範圍並非由詳細說明界定,而是由申請專利範圍及其等效範圍界定,且處於申請專利範圍及其等效範圍的範圍內的所有變動皆應被視作包含於本發明中。 While this disclosure includes specific examples, it will be apparent to those skilled in the art that various forms can be made in these examples without departing from the spirit and scope of the claims and their equivalents and changes in details. The examples described herein should be regarded as illustrative only and not restrictive. Descriptions of features or aspects in each example should be considered applicable to similar features or aspects in other examples. If the techniques are performed in a different order and/or if the components in the described systems, architectures, devices, or circuits are combined in a different manner and/or substituted or supplemented with other components or their equivalents, the achieve suitable results. Therefore, the scope of the present invention is defined not by the detailed description but by the scope of the patent application and its equivalents, and all changes within the scope of the patent application and its equivalents should be construed as being included in the present invention middle.
100‧‧‧絕緣層/第一絕緣層 100‧‧‧Insulating layer/First insulating layer
110‧‧‧金屬接墊/第一金屬接墊 110‧‧‧Metal Pad/First Metal Pad
111、131‧‧‧凹陷空間/凹陷部 111, 131‧‧‧Depressed space/depressed part
120、220‧‧‧金屬凸塊 120, 220‧‧‧Metal bump
121、221‧‧‧金屬通孔 121, 221‧‧‧Metal through hole
122、222‧‧‧低熔點金屬層 122, 222‧‧‧low melting point metal layer
130、230‧‧‧電路 130, 230‧‧‧ circuit
200‧‧‧絕緣層/第二絕緣層 200‧‧‧Insulating layer/Second insulating layer
210‧‧‧第二金屬接墊 210‧‧‧Second metal pad
300‧‧‧絕緣層/第三絕緣層 300‧‧‧Insulating layer/Third insulating layer
310‧‧‧第三金屬接墊 310‧‧‧Third metal pad
P‧‧‧電路層 P‧‧‧circuit layer
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TWI705747B (en) * | 2019-08-30 | 2020-09-21 | 嘉聯益科技股份有限公司 | Multilayer flexible circuit board and manufacturing method thereof |
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CN101425512A (en) * | 2007-10-30 | 2009-05-06 | 海力士半导体有限公司 | Stacked semiconductor package and method for manufacturing the same |
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KR100905566B1 (en) * | 2007-04-30 | 2009-07-02 | 삼성전기주식회사 | Carrier member for transmitting circuits, coreless printed circuit board using the said carrier member, and methods of manufacturing the same |
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CN101425512A (en) * | 2007-10-30 | 2009-05-06 | 海力士半导体有限公司 | Stacked semiconductor package and method for manufacturing the same |
CN102683545A (en) * | 2011-03-16 | 2012-09-19 | 隆达电子股份有限公司 | Light source module for improving heat dissipation efficiency and embedded packaging structure thereof |
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