TWI776948B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI776948B
TWI776948B TW107131671A TW107131671A TWI776948B TW I776948 B TWI776948 B TW I776948B TW 107131671 A TW107131671 A TW 107131671A TW 107131671 A TW107131671 A TW 107131671A TW I776948 B TWI776948 B TW I776948B
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Taiwan
Prior art keywords
transistor
insulator
conductor
oxide
addition
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TW107131671A
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English (en)
Chinese (zh)
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TW201924070A (zh
Inventor
遠藤佑太
須澤英臣
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日商半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW107131671A 2017-09-15 2018-09-10 半導體裝置及其製造方法 TWI776948B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-177386 2017-09-15
JP2017177386 2017-09-15

Publications (2)

Publication Number Publication Date
TW201924070A TW201924070A (zh) 2019-06-16
TWI776948B true TWI776948B (zh) 2022-09-11

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TW107131671A TWI776948B (zh) 2017-09-15 2018-09-10 半導體裝置及其製造方法
TW111133081A TWI836584B (zh) 2017-09-15 2018-09-10 半導體裝置及其製造方法

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US (2) US11296085B2 (enExample)
JP (3) JP7237498B2 (enExample)
KR (1) KR102597945B1 (enExample)
TW (2) TWI776948B (enExample)
WO (1) WO2019053558A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210257290A1 (en) * 2020-02-19 2021-08-19 Nanya Technology Corporation Semiconductor device with connecting structure and method for fabricating the same
US12080557B2 (en) * 2021-08-30 2024-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming 2-D material semiconductor device with improved source/drain electrodes and gate dielectric
KR102851120B1 (ko) * 2022-01-20 2025-08-28 삼성디스플레이 주식회사 표시패널
WO2025163450A1 (ja) * 2024-01-31 2025-08-07 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

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US20120235150A1 (en) * 2011-03-16 2012-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105789322A (zh) * 2009-09-16 2016-07-20 株式会社半导体能源研究所 半导体器件及其制造方法
US9553583B2 (en) * 2009-10-16 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a small off current and oxide semiconductor layer having a function of a channel formation layer
TW201731077A (zh) * 2009-10-29 2017-09-01 半導體能源研究所股份有限公司 半導體裝置

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EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
CN104282691B (zh) 2009-10-30 2018-05-18 株式会社半导体能源研究所 半导体装置
JP2011192801A (ja) 2010-03-15 2011-09-29 Elpida Memory Inc キャパシタ素子とキャパシタ素子の製造方法および半導体装置
WO2012102183A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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US9553583B2 (en) * 2009-10-16 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a small off current and oxide semiconductor layer having a function of a channel formation layer
TW201731077A (zh) * 2009-10-29 2017-09-01 半導體能源研究所股份有限公司 半導體裝置
US20120235150A1 (en) * 2011-03-16 2012-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
TW202303993A (zh) 2023-01-16
KR102597945B1 (ko) 2023-11-02
US11770939B2 (en) 2023-09-26
US20220052048A1 (en) 2022-02-17
TW201924070A (zh) 2019-06-16
JP2023063331A (ja) 2023-05-09
JP2019054244A (ja) 2019-04-04
JP7237498B2 (ja) 2023-03-13
WO2019053558A1 (en) 2019-03-21
US20200279851A1 (en) 2020-09-03
KR20200051618A (ko) 2020-05-13
TWI836584B (zh) 2024-03-21
US11296085B2 (en) 2022-04-05
JP2025065417A (ja) 2025-04-17

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