TWI776392B - 用於原位蝕刻速率測量之系統及方法 - Google Patents

用於原位蝕刻速率測量之系統及方法 Download PDF

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Publication number
TWI776392B
TWI776392B TW110105507A TW110105507A TWI776392B TW I776392 B TWI776392 B TW I776392B TW 110105507 A TW110105507 A TW 110105507A TW 110105507 A TW110105507 A TW 110105507A TW I776392 B TWI776392 B TW I776392B
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TW
Taiwan
Prior art keywords
sample
ion beam
etch rate
vacuum chamber
light
Prior art date
Application number
TW110105507A
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English (en)
Chinese (zh)
Other versions
TW202133293A (zh
Inventor
瑪利奧 貝林格
斯特芬 蓋特勒
拉爾夫 斯佩林
Original Assignee
德商比埃勒阿爾策瑙有限公司
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Publication of TW202133293A publication Critical patent/TW202133293A/zh
Application granted granted Critical
Publication of TWI776392B publication Critical patent/TWI776392B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Weting (AREA)
TW110105507A 2020-02-20 2021-02-18 用於原位蝕刻速率測量之系統及方法 TWI776392B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20158398.6 2020-02-20
EP20158398.6A EP3869534A1 (de) 2020-02-20 2020-02-20 In-situ-ätzraten- oder abscheidungsratenmesssystem

Publications (2)

Publication Number Publication Date
TW202133293A TW202133293A (zh) 2021-09-01
TWI776392B true TWI776392B (zh) 2022-09-01

Family

ID=69723808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110105507A TWI776392B (zh) 2020-02-20 2021-02-18 用於原位蝕刻速率測量之系統及方法

Country Status (8)

Country Link
US (1) US20230139375A1 (de)
EP (1) EP3869534A1 (de)
JP (1) JP2023514393A (de)
KR (1) KR20220137992A (de)
CN (1) CN115136277A (de)
CA (1) CA3171977A1 (de)
TW (1) TWI776392B (de)
WO (1) WO2021165043A1 (de)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070100580A1 (en) * 2005-10-31 2007-05-03 Eastman Kodak Company Measuring layer thickness or composition changes
TW200745390A (en) * 2006-05-11 2007-12-16 Siltronic Ag Method and device for processing a semiconductor wafer by etching
US20090065478A1 (en) * 2007-09-11 2009-03-12 Dockery Kevin P Measuring etching rates using low coherence interferometry
TW200919577A (en) * 2007-09-14 2009-05-01 Qualcomm Mems Technologies Inc Etching processes used in MEMS production
TW201445657A (zh) * 2013-03-06 2014-12-01 Kla Tencor Corp 用於臨場薄膜厚度監控之厚度改變監控晶圓
US20160130696A1 (en) * 2014-05-08 2016-05-12 Halliburton Energy Services, Inc. Optical transmission/reflection mode in-situ deposition rate control for ice fabrication
US20170066010A1 (en) * 2011-04-06 2017-03-09 Applied Materials, Inc. Evaporation system with measurement unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150534A (ja) * 1983-02-16 1984-08-28 Ulvac Corp イオンビ−ムエツチング装置
US5947053A (en) * 1998-01-09 1999-09-07 International Business Machines Corporation Wear-through detector for multilayered parts and methods of using same
US6888639B2 (en) * 2001-09-24 2005-05-03 Applied Materials, Inc. In-situ film thickness measurement using spectral interference at grazing incidence
CN100456434C (zh) * 2005-12-08 2009-01-28 北京北方微电子基地设备工艺研究中心有限责任公司 一种半导体刻蚀装置
CN102486465B (zh) * 2010-12-06 2013-07-03 中国科学院微电子研究所 多功能离子束溅射与刻蚀及原位物性分析系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070100580A1 (en) * 2005-10-31 2007-05-03 Eastman Kodak Company Measuring layer thickness or composition changes
TW200745390A (en) * 2006-05-11 2007-12-16 Siltronic Ag Method and device for processing a semiconductor wafer by etching
US20090065478A1 (en) * 2007-09-11 2009-03-12 Dockery Kevin P Measuring etching rates using low coherence interferometry
TW200919577A (en) * 2007-09-14 2009-05-01 Qualcomm Mems Technologies Inc Etching processes used in MEMS production
US20170066010A1 (en) * 2011-04-06 2017-03-09 Applied Materials, Inc. Evaporation system with measurement unit
TW201445657A (zh) * 2013-03-06 2014-12-01 Kla Tencor Corp 用於臨場薄膜厚度監控之厚度改變監控晶圓
US20160130696A1 (en) * 2014-05-08 2016-05-12 Halliburton Energy Services, Inc. Optical transmission/reflection mode in-situ deposition rate control for ice fabrication

Also Published As

Publication number Publication date
EP3869534A1 (de) 2021-08-25
CN115136277A (zh) 2022-09-30
JP2023514393A (ja) 2023-04-05
CA3171977A1 (en) 2021-08-26
TW202133293A (zh) 2021-09-01
US20230139375A1 (en) 2023-05-04
KR20220137992A (ko) 2022-10-12
WO2021165043A1 (en) 2021-08-26

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