TWI772955B - Thermal conductive and electrical insulating substrate structure - Google Patents
Thermal conductive and electrical insulating substrate structure Download PDFInfo
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Description
本發明涉及基材結構及其製程,具體來說是涉及絕緣導熱基材結構及其製程。 The present invention relates to a base material structure and its manufacturing process, in particular to an insulating and thermally conductive base material structure and its manufacturing process.
目前電動汽車/混合動力汽車之功率模組內的電子元件功率很高,因此需增加絕緣金屬基板中的銅層的厚度,以提升均熱效果。 At present, the power of the electronic components in the power module of the electric vehicle/hybrid electric vehicle is very high, so the thickness of the copper layer in the insulating metal substrate needs to be increased to improve the heat dissipation effect.
目前直接鍍銅(DPC)技術,比起常見的直接敷銅(DBC)技術,更容易做到厚銅,但銅層厚度要求太厚時,即難以採用蝕刻的方式製作圖案化銅層。 At present, the direct copper plating (DPC) technology is easier to achieve thick copper than the common direct copper plating (DBC) technology.
另外,請參考圖1,示意出一種目前現有的絕緣金屬基板結構,且線路設計造成絕緣層10A上的銅層20A之間的間距G較窄時,且當電壓大時,電子會由一個銅層20A的側壁放電到另外一個銅層20A的側壁,造成跳電短路的現象。
In addition, please refer to FIG. 1 , which illustrates an existing insulating metal substrate structure, and when the circuit design causes the distance G between the
有鑑於此,本發明人本於多年從事相關產品之開發與設計,有感上述缺失之可改善,乃特潛心研究並配合學理之運用,終於提出一種設計合理且有效改善上述缺失之本發明。 In view of this, the inventor of the present invention has been engaged in the development and design of related products for many years, and feels that the above deficiencies can be improved, so he has devoted himself to research and application of theories, and finally proposes a reasonable design and effectively improves the above deficiencies. The present invention.
本發明所要解決的技術問題在於,針對現有技術的不足提供一種絕緣導熱基材結構及其製程。 The technical problem to be solved by the present invention is to provide an insulating and thermally conductive substrate structure and a manufacturing process thereof in view of the deficiencies of the prior art.
為了解決上述的技術問題,本發明提供一種絕緣導熱基材結 構,包括:絕緣層、多個金屬層、以及多個功能層;其中,多個所述金屬層及多個所述功能層設置在所述絕緣層上,所述金屬層的側壁與相對應的所述功能層相接觸,且任兩相鄰所述金屬層之間的兩所述功能層不接觸。 In order to solve the above technical problems, the present invention provides an insulating and thermally conductive substrate structure. The structure includes: an insulating layer, a plurality of metal layers, and a plurality of functional layers; wherein, the plurality of the metal layers and the plurality of the functional layers are arranged on the insulating layer, and the sidewalls of the metal layers correspond to The functional layers are in contact with each other, and the two functional layers between any two adjacent metal layers are not in contact.
在一優選實施例中,所述功能層以高絕緣材料所構成。 In a preferred embodiment, the functional layer is made of high insulating material.
在一優選實施例中,所述功能層以高分子材料所構成。 In a preferred embodiment, the functional layer is formed of a polymer material.
在一優選實施例中,所述功能層以低結合性的高分子材料所構成。 In a preferred embodiment, the functional layer is formed of a low-binding polymer material.
在一優選實施例中,所述功能層以抗腐蝕材料所構成。 In a preferred embodiment, the functional layer is made of corrosion-resistant material.
在一優選實施例中,所述功能層為複合層,其包含有形成在所述金屬層側壁的陶瓷層以及形成在所述陶瓷層側壁的高分子層,且所述高分子層以低結合性的高分子材料所構成。 In a preferred embodiment, the functional layer is a composite layer, which includes a ceramic layer formed on the sidewall of the metal layer and a polymer layer formed on the sidewall of the ceramic layer, and the polymer layer has a low bond. made of high molecular weight materials.
本發明另提供一種絕緣導熱基材結構,包括:絕緣層、多個金屬層、多個功能層、以及框架;其中,多個所述金屬層、多個所述功能層、以及所述框架設置在所述絕緣層上,所述金屬層的側壁與相對應的所述功能層相接觸,且任兩相鄰所述金屬層之間的兩所述功能層與所述框架相接觸。 The present invention further provides an insulating and thermally conductive substrate structure, comprising: an insulating layer, a plurality of metal layers, a plurality of functional layers, and a frame; wherein the plurality of the metal layers, the plurality of the functional layers, and the frame are arranged On the insulating layer, the sidewall of the metal layer is in contact with the corresponding functional layer, and the two functional layers between any two adjacent metal layers are in contact with the frame.
在一優選實施例中,所述功能層以高絕緣材料所構成。 In a preferred embodiment, the functional layer is made of high insulating material.
在一優選實施例中,所述功能層以高分子材料所構成。 In a preferred embodiment, the functional layer is formed of a polymer material.
在一優選實施例中,所述功能層以高結合性的高分子材料所構成。 In a preferred embodiment, the functional layer is formed of a high-binding polymer material.
在一優選實施例中,所述功能層以抗腐蝕材料所構成。 In a preferred embodiment, the functional layer is made of corrosion-resistant material.
在一優選實施例中,所述功能層為複合層,其包含有形成在所述金屬層側壁的陶瓷層以及形成在所述陶瓷層側壁的高分子層,且所述高分子層以高結合性的高分子材料所構成。 In a preferred embodiment, the functional layer is a composite layer, which includes a ceramic layer formed on the sidewall of the metal layer and a polymer layer formed on the sidewall of the ceramic layer, and the polymer layer is highly bonded. made of high molecular weight materials.
在一優選實施例中,所述框架以低導電性的非金屬材料所構成。 In a preferred embodiment, the frame is made of a non-metallic material with low conductivity.
本發明另提供一種絕緣導熱基材結構之製程,包括步驟:(a)附著多個功能層於多個金屬層的側壁;(b)附著框架於任兩相鄰所述功能層之間;(c)附著所述框架及多個所述金屬層於絕緣層上。 The present invention further provides a manufacturing process of an insulating and thermally conductive substrate structure, comprising the steps of: (a) attaching a plurality of functional layers to the sidewalls of a plurality of metal layers; (b) attaching a frame between any two adjacent functional layers; ( c) attaching the frame and a plurality of the metal layers on the insulating layer.
在一優選實施例中,所述絕緣導熱基材結構之製程,更包括步驟:(d)移除所述框架。 In a preferred embodiment, the manufacturing process of the insulating and thermally conductive substrate structure further includes the step of: (d) removing the frame.
在一優選實施例中,步驟(d)中,是以腐蝕方式移除所述框架,且所述功能層是以抗腐蝕材料所構成。 In a preferred embodiment, in step (d), the frame is removed by etching, and the functional layer is made of corrosion-resistant material.
在一優選實施例中,步驟(d)中,是以剝離方式移除所述框架,且所述功能層是以低結合性的高分子材料所構成。 In a preferred embodiment, in step (d), the frame is removed by peeling, and the functional layer is made of a low-bond polymer material.
在一優選實施例中,所述功能層為複合層,其包含有附著在所述金屬層側壁的陶瓷層以及附著在所述陶瓷層側壁的高分子層。 In a preferred embodiment, the functional layer is a composite layer, which includes a ceramic layer attached to the sidewall of the metal layer and a polymer layer attached to the sidewall of the ceramic layer.
在一優選實施例中,所述框架以低導電性的非金屬材料所構成。 In a preferred embodiment, the frame is made of a non-metallic material with low conductivity.
在一優選實施例中,附著的方式為物理接合或化學成形方式。 In a preferred embodiment, the means of attachment is physical bonding or chemical forming.
本發明的有益效果至少在於,本發明提供的絕緣導熱基材結構,透過「多個所述金屬層及多個所述功能層設置在所述絕緣層上,所述金屬層的側壁與相對應的所述功能層相接觸,且任兩相鄰所述金屬層之間的兩所述功能層不接觸」的技術方案,可以有效地減少跳電短路發生的機率。 The beneficial effect of the present invention is at least in that the insulating and thermally conductive substrate structure provided by the present invention is provided on the insulating layer through "a plurality of the metal layers and a plurality of the functional layers, and the sidewalls of the metal layers correspond to the The technical solution that the functional layers are in contact with each other, and the two functional layers between any two adjacent metal layers are not in contact” can effectively reduce the probability of electrical short circuit.
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說 明,並非用來對本發明加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed descriptions and drawings related to the present invention, but the drawings provided are only for reference and illustration. It is not intended to limit the present invention.
[現有技術] [current technology]
10A:絕緣層 10A: Insulation layer
20A:銅層 20A: Copper layer
G:間距 G: Spacing
[本發明] [this invention]
10:絕緣層 10: Insulation layer
20:金屬層 20: Metal layer
30:功能層 30: Functional Layer
31:陶瓷層 31: Ceramic layer
32:高分子層 32: polymer layer
40:框架 40: Frame
W:寬度 W: width
圖1為現有技術的絕緣金屬基板結構的側視示意圖。 FIG. 1 is a schematic side view of an insulating metal substrate structure in the prior art.
圖2為本發明第一實施例提供的絕緣導熱基材結構的側視示意圖。 FIG. 2 is a schematic side view of the structure of the insulating and thermally conductive substrate provided by the first embodiment of the present invention.
圖3為本發明第二實施例提供的絕緣導熱基材結構的側視示意圖。 FIG. 3 is a schematic side view of an insulating and thermally conductive substrate structure provided by a second embodiment of the present invention.
圖4為本發明第三實施例提供的絕緣導熱基材結構的側視示意圖。 FIG. 4 is a schematic side view of an insulating and thermally conductive substrate structure provided by a third embodiment of the present invention.
圖5A至圖5C為本發明第四實施例提供的絕緣導熱基材結構之製程的示意圖。 5A to 5C are schematic diagrams of a manufacturing process of the insulating and thermally conductive substrate structure provided by the fourth embodiment of the present invention.
圖6A至圖6D為本發明第五實施例提供的絕緣導熱基材結構之製程的示意圖。 6A to 6D are schematic diagrams of the manufacturing process of the insulating and thermally conductive substrate structure provided by the fifth embodiment of the present invention.
圖7A至圖7C為本發明第六實施例提供的絕緣導熱基材結構之製程的示意圖。 7A to 7C are schematic diagrams illustrating the manufacturing process of the insulating and thermally conductive substrate structure provided by the sixth embodiment of the present invention.
8A至圖8C為本發明第七實施例提供的絕緣導熱基材結構之製程的示意圖。 8A to 8C are schematic diagrams of the manufacturing process of the insulating and thermally conductive substrate structure provided by the seventh embodiment of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術 內容,但所公開的內容並非用以限制本發明的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 The following are specific specific examples to illustrate the embodiments disclosed in the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further illustrate the related art of the present invention in detail content, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.
請參考圖2,本發明第一實施例提供一種絕緣導熱基材結構。如圖所示,根據本發明第一實施例所提供的絕緣導熱基材結構,其基本上包括有絕緣層10、多個金屬層20、以及多個功能層(function layer)30。
Please refer to FIG. 2 , a first embodiment of the present invention provides an insulating and thermally conductive substrate structure. As shown in the figure, the insulating and thermally conductive substrate structure provided according to the first embodiment of the present invention basically includes an
承上,多個所述金屬層20及多個所述功能層30設置在所述絕緣層10上,所述金屬層20的側壁與相對應的所述功能層30相接觸,且任兩相鄰所述金屬層20之間的兩所述功能層30不接觸。本實施例的多個所述金屬層20的數量示意為兩個,但多個所述金屬層20的數量也可以為兩個以上,在其他實施例中,多個所述金屬層20也可以形成為預定圖案。在本實施例中,所述功能層20具有用以避免任兩相鄰所述金屬層20之間發生跳電現象的功能。
On top of that, a plurality of the
進一步來說,由於線路設計造成任兩相鄰所述金屬層20之間的間距較窄時,且當電壓大時,電子會由一個所述金屬層20的側壁放電到另外一個所述金屬層20的側壁,造成跳電短路,因此所述功能層30是以高絕緣材料所構成,例如金屬氧化物(氧化鋁、氧化銅、氧化矽等),或是以高分子材料(如環氧樹脂、聚四氟乙烯等)所構成,可以有效減少跳電短路發生的機率。
Further, when the distance between any two adjacent metal layers 20 is narrow due to the circuit design, and when the voltage is large, electrons will be discharged from the sidewall of one of the metal layers 20 to the other of the metal layers The sidewall of 20 causes electrical short circuit, so the
請參考圖3,本發明第二實施例提供一種絕緣導熱基材結構。如圖所示,根據本發明第二實施例所提供的絕緣導熱基材結構,其基本上包括有絕緣層10、多個金屬層20、多個功能層30、以及框架40。
Please refer to FIG. 3 , a second embodiment of the present invention provides an insulating and thermally conductive substrate structure. As shown in the figure, the insulating and thermally conductive substrate structure provided according to the second embodiment of the present invention basically includes an insulating
承上,多個所述金屬層20、多個所述功能層30、以及所述框架40設置在所述絕緣層10上,所述金屬層20的側壁與相對應的所述功能層
30相接觸,且任兩相鄰所述金屬層20之間的兩所述功能層30與所述框架40相接觸。所述框架40的形狀可因應需要而適當的變化,並不加以限制。在本實施例中,所述框架40具有精準控制線寬作用。
On top of that, a plurality of the metal layers 20 , the plurality of
進一步來說,由於線路設計造成任兩相鄰所述金屬層20之間的所述框架40的寬度W較窄時,且當電壓大時,電子會由一個所述金屬層20的側壁放電到另外一個所述金屬層20的側壁,造成跳電短路,因此所述功能層30可以是以高絕緣材料所構成,例如金屬氧化物(氧化鋁、氧化銅、氧化矽等),或是以高分子材料(如環氧樹脂、聚四氟乙烯等)所構成,從而可以有效減少跳電短路發生的機率。
Further, when the width W of the
並且,在所述框架40不需移除的情況下,所述功能層30可以是以高結合性的高分子材料所構成,例如環氧樹脂,以增加與所述框架40的結合性,從而避免所述框架40脫落。再者,所述框架40可以是以低導電性的非金屬材料所構成,例如聚四氟乙烯。
In addition, in the case where the
請參考圖4,本發明第三實施例提供一種絕緣導熱基材結構。如圖所示,根據本發明第三實施例所提供的絕緣導熱基材結構,其基本上包括有絕緣層10、多個金屬層20、多個功能層30、以及框架40。
Referring to FIG. 4 , a third embodiment of the present invention provides an insulating and thermally conductive substrate structure. As shown in the figure, the insulating and thermally conductive substrate structure provided according to the third embodiment of the present invention basically includes an insulating
在本實施例中,所述功能層30可以是複合層。進一步說,所述功能層30可以包含有形成在所述金屬層20側壁的陶瓷層31以增加絕緣性,以及形成在所述陶瓷層31側壁的高分子層32以增加與所述框架40的結合性。
In this embodiment, the
在其他實施例中,在所述框架40需移除的情況下,所述功能層30可以是以低結合性的高分子材料所構成,例如特殊型矽酮,以使所述框架40易於被剝離。
In other embodiments, when the
在其他實施例中,在所述框架40需以化學方式移除的情況
下,所述功能層30可以是以抗腐蝕材料所構成,例如陶瓷材料(氧化鋁、氧化銅、氧化矽等),以減少化學液體造成的側向侵蝕。
In other embodiments, where the
請參考圖5A至圖5C,本發明第四實施例提供一種絕緣導熱基材結構之製程,主要包括以下步驟: Referring to FIGS. 5A to 5C , a fourth embodiment of the present invention provides an insulating and thermally conductive substrate structure manufacturing process, which mainly includes the following steps:
(a)附著多個功能層30於多個金屬層20的側壁。
(a) Attaching the plurality of
(b)附著框架40於任兩相鄰所述功能層30之間。
(b) Attaching the
(c)附著所述框架40及多個所述金屬層20於絕緣層10上。
(c) attaching the
進一步說,附著的方式可以為物理接合或化學成形方式。舉例來說,可採用壓合金屬片/塊,噴塗、電鍍等物理或化學方式,使所述金屬層20附著到所述絕緣層10上。
Furthermore, the means of attachment may be physical bonding or chemical forming. For example, the
所述功能層30可以是以高絕緣材料所構成,例如金屬氧化物(氧化鋁、氧化銅、氧化矽等),或是以高分子材料(如環氧樹脂、聚四氟乙烯等)所構成,從而可以有效減少跳電短路發生的機率。
The
並且,在所述框架40不需移除的情況下,所述功能層30可以是以高結合性的高分子材料所構成,例如環氧樹脂,以增加與所述框架40的結合性,從而避免所述框架40脫落。再者,所述框架40可以是以低導電性的非金屬材料所構成,例如聚四氟乙烯。另外,所述功能層30可以是複合層。進一步說,所述功能層30可以包含有附著在所述金屬層20側壁的陶瓷層以及附著在所述陶瓷層側壁的高分子層,且所述高分子層是以高結合性的高分子材料所構成。
In addition, in the case where the
請參考圖6A至圖6D,本發明第五實施例提供一種絕緣導熱基材結構之製程,主要包括以下步驟: Referring to FIGS. 6A to 6D , a fifth embodiment of the present invention provides an insulating and thermally conductive substrate structure manufacturing process, which mainly includes the following steps:
(a)附著多個功能層30於多個金屬層20的側壁。
(a) Attaching the plurality of
(b)附著框架40於任兩相鄰所述功能層30之間。
(b) Attaching the
(c)附著所述框架40及多個所述金屬層20於絕緣層10上。
(c) attaching the
(d)移除所述框架40。
(d) Remove the
進一步說,所述框架40移除的方式可以為物理或化學移除方式。舉例來說,可採用腐蝕方式移除所述框架40,且欲以腐蝕方式移除所述框架40時,所述功能層30可以是以抗腐蝕材料所構成,以減少腐蝕造成的側向侵蝕。
Further, the removal method of the
另外,可採用剝離方式移除所述框架40,且欲以剝離方式移除所述框架40時,所述功能層30可以是以低結合性的高分子材料所構成,以使所述框架40易於被剝離。
In addition, the
需說明的是,以上是針對本實施例與其它實施例不同之處進行說明,而不再對相同之處作重複贅述。 It should be noted that, the above description is based on the differences between this embodiment and other embodiments, and the similarities will not be repeated.
請參考圖7A至圖7C,本發明第六實施例提供一種絕緣導熱基材結構之製程,主要包括以下步驟: Referring to FIGS. 7A to 7C , a sixth embodiment of the present invention provides an insulating and thermally conductive substrate structure manufacturing process, which mainly includes the following steps:
(a)附著多個金屬層20於絕緣層10上。
(a) Attaching a plurality of
(b)附著多個功能層30於多個所述金屬層20的側壁。
(b) attaching a plurality of
(c)附著框架40於任兩相鄰所述功能層30之間和所述絕緣層10上。
(c) Attaching the
進一步說,附著的方式可以為物理接合或化學成形方式。並且,在所述框架40不需移除的情況下,本實施例所述功能層30可以是以高結合性的高分子材料所構成,且所述框架40可以是以低導電性的非金屬材料所構成。
Furthermore, the means of attachment may be physical bonding or chemical forming. In addition, in the case where the
需說明的是,以上是針對本實施例與其它實施例不同之處進行說明,而不再對相同之處作重複贅述。 It should be noted that, the above description is based on the differences between this embodiment and other embodiments, and the similarities will not be repeated.
請參考圖8A至圖8C,本發明第七實施例提供一種絕緣導熱 基材結構之製程,主要包括以下步驟: Please refer to FIG. 8A to FIG. 8C , a seventh embodiment of the present invention provides an insulating and thermally conductive The manufacturing process of the substrate structure mainly includes the following steps:
(a)附著多個功能層30於多個金屬層20的側壁。
(a) Attaching the plurality of
(b)附著多個所述金屬層20於絕緣層10上。
(b) Attaching a plurality of the metal layers 20 on the insulating
(c)附著框架40於任兩相鄰所述功能層30之間和所述絕緣層10上。
(c) Attaching the
進一步說,附著的方式可以為物理接合或化學成形方式。並且,在所述框架40不需移除的情況下,本實施例所述功能層30可以是以高結合性的高分子材料所構成,且所述框架40可以是以低導電性的非金屬材料所構成。
Furthermore, the means of attachment may be physical bonding or chemical forming. In addition, in the case where the
需說明的是,以上是針對本實施例與其它實施例不同之處進行說明,而不再對相同之處作重複贅述。 It should be noted that, the above description is based on the differences between this embodiment and other embodiments, and the similarities will not be repeated.
綜合以上所述,本發明提供的絕緣導熱基材結構,透過「多個所述金屬層及多個所述功能層設置在所述絕緣層上,所述金屬層的側壁與相對應的所述功能層相接觸,且任兩相鄰所述金屬層之間的兩所述功能層不接觸」的技術方案,可以有效地減少跳電短路發生的機率。 Based on the above, the insulating and thermally conductive base material structure provided by the present invention is provided on the insulating layer through "a plurality of the metal layers and a plurality of the functional layers, and the sidewalls of the metal layers correspond to the corresponding The technical solution that the functional layers are in contact with each other, and the two functional layers between any two adjacent metal layers are not in contact, can effectively reduce the probability of electrical short circuit.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.
10:絕緣層 10: Insulation layer
20:金屬層 20: Metal layer
30:功能層 30: Functional Layer
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US20070096311A1 (en) * | 2003-09-26 | 2007-05-03 | Tessera, Inc. | Structure and method of making capped chips having vertical interconnects |
TWM359800U (en) * | 2008-10-27 | 2009-06-21 | Benstar Ltd | Structure of high heat conductivity and dissipation metal deposited aluminum substrate |
TWM577178U (en) * | 2019-01-10 | 2019-04-21 | 健策精密工業股份有限公司 | Insulated metal substrate |
TWM609874U (en) * | 2020-11-06 | 2021-04-01 | 艾姆勒車電股份有限公司 | Insulation heat-conductive substrate structure |
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US20070096311A1 (en) * | 2003-09-26 | 2007-05-03 | Tessera, Inc. | Structure and method of making capped chips having vertical interconnects |
TWM359800U (en) * | 2008-10-27 | 2009-06-21 | Benstar Ltd | Structure of high heat conductivity and dissipation metal deposited aluminum substrate |
TWM577178U (en) * | 2019-01-10 | 2019-04-21 | 健策精密工業股份有限公司 | Insulated metal substrate |
TWM609874U (en) * | 2020-11-06 | 2021-04-01 | 艾姆勒車電股份有限公司 | Insulation heat-conductive substrate structure |
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