TWI770953B - Crystal growth furnace - Google Patents

Crystal growth furnace Download PDF

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TWI770953B
TWI770953B TW110114519A TW110114519A TWI770953B TW I770953 B TWI770953 B TW I770953B TW 110114519 A TW110114519 A TW 110114519A TW 110114519 A TW110114519 A TW 110114519A TW I770953 B TWI770953 B TW I770953B
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crucible
axial direction
heating device
heater
crystal growth
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TW110114519A
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TW202242207A (en
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廖思涵
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環球晶圓股份有限公司
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Priority to CN202210119829.8A priority patent/CN115233295A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A crystal growth furnace includes a furnace body, a crucible, a first heating device, a second heating device, and a lifting device. The crucible is arranged in the furnace body for containing solid raw materials to be melted. The crucible has an upper opening; the first heating device is arranged on the side periphery of the crucible for heating the crucible; the second heating device is arranged above the upper opening of the crucible, and the second heating device includes a heater. The heater faces the upper opening of the crucible; the lifting device is connected to the second heating device, and the lifting device can be controlled to drive the second heating device to move up and down relative to the crucible in an axial direction.

Description

長晶爐crystal growth furnace

本發明係與長晶爐有關；特別是指一種降低熔化矽料過程中所耗費的熱能的長晶爐。The present invention relates to a crystal growth furnace; in particular, it refers to a crystal growth furnace which reduces the heat energy consumed in the process of melting silicon material.

在典型的CZ法(Czochralski)製程中，係將矽料置於坩堝內，並將矽料在約1416℃之溫度熔化為液態矽後，將具預定結晶取向之矽晶種下降以接觸液態矽之表面，在適當地溫度控制下，液態矽在矽晶種上形成具有與該矽晶種所具預定結晶取向之單晶，接著，旋轉並慢慢提拉矽晶種及坩堝，以在矽晶種下方形成矽晶棒。In a typical CZ process (Czochralski) process, silicon material is placed in a crucible, and after the silicon material is melted into liquid silicon at a temperature of about 1416°C, a silicon seed with a predetermined crystallographic orientation is lowered to contact the liquid silicon On the surface, under proper temperature control, the liquid silicon forms a single crystal with the predetermined crystallographic orientation of the silicon seed crystal on the silicon seed crystal. A silicon ingot is formed under the seed crystal.

已知習用之長晶爐是透過設置於坩堝側邊之加熱器輸出熱能以熔化坩堝中之矽料，而習用之長晶爐之設置使得坩堝之熱能容易自坩堝上方開口逸散，進而造成大量熱能的損耗及增加加熱器輸出功率，除此之外，當坩堝內部溫度下降時，需耗費較長的時間熔化矽料，不僅影響到生產效率，也容易因為坩堝本體溫度分布不均勻而使得坩堝使用壽命縮短，進而造成生產成本的提升。因此，如何降低熔化矽料過程中加熱器所輸出之總功率以及如何使坩堝本體溫度均勻分布是亟待解決的問題。It is known that the conventional crystal growth furnace outputs thermal energy through a heater arranged on the side of the crucible to melt the silicon material in the crucible, and the setting of the conventional crystal growth furnace allows the heat energy of the crucible to easily escape from the opening above the crucible, thereby causing a large amount of In addition, when the internal temperature of the crucible drops, it takes a long time to melt the silicon material, which not only affects the production efficiency, but also easily causes the crucible to be caused by the uneven temperature distribution of the crucible body. The service life is shortened, which in turn leads to an increase in production costs. Therefore, how to reduce the total power output by the heater in the process of melting silicon material and how to distribute the temperature of the crucible body evenly are the problems to be solved urgently.

有鑑於此，本發明之目的在於提供一種長晶爐，於熔化坩堝中矽料的過程中能降低熔化矽料過程中加熱器所輸出之總功率以及使坩堝本體溫度均勻分布。In view of this, the purpose of the present invention is to provide a crystal growth furnace, which can reduce the total power output by the heater during the process of melting the silicon material in the crucible and make the temperature of the crucible body evenly distributed.

緣以達成上述目的，本發明提供的一種長晶爐，包括一爐體、一坩堝、一第一加熱裝置、一第二加熱裝置及一升降裝置，該坩堝設置於該爐體中，用以容置待熔化之固態原料，該坩堝具有一上開口；該第一加熱裝置設置於該坩堝的側邊外圍，用以對該坩堝加熱；該第二加熱裝置設置於該坩堝之該上開口上方，該第二加熱裝置包括一加熱器，該加熱器面對該坩堝的上開口；該升降裝置與該第二加熱裝置連接，該升降裝置能受控制地帶動該第二加熱裝置於一軸向方向上相對該坩堝上下移動。In order to achieve the above purpose, the present invention provides a crystal growth furnace, which includes a furnace body, a crucible, a first heating device, a second heating device and a lifting device, and the crucible is arranged in the furnace body for The crucible has an upper opening for accommodating solid raw materials to be melted; the first heating device is arranged on the side periphery of the crucible for heating the crucible; the second heating device is arranged above the upper opening of the crucible , the second heating device includes a heater, the heater faces the upper opening of the crucible; the lifting device is connected with the second heating device, the lifting device can be controlled to drive the second heating device in an axial direction The direction moves up and down relative to the crucible.

本發明之效果在於，進行熔化坩堝中之固態原料的步驟時，能透過控制該升降裝置帶動該第二加熱裝置於該軸向方向移動至接近該坩堝上方的位置，如此一來，能透過設置於該坩堝的側邊外圍之該第一加熱裝置以及設置於該坩堝之該上開口上方之該第二加熱裝置同時對該坩堝進行加熱，而使得該坩堝均勻受熱，藉此，不僅能改善習用之長晶爐之熱能容易自坩堝上方開口逸散，進而造成大量熱能的損耗及增加加熱器輸出功率的問題，還能改善坩堝本體溫度分布不均勻而使得坩堝使用壽命縮短的問題；當完成熔化坩堝中之固態原料的步驟後，能透過控制該升降裝置帶動該第二加熱裝置於該軸向方向移動至遠離該坩堝上方的位置，以利後續例如拉晶之作業。The effect of the present invention is that when the step of melting the solid raw material in the crucible is performed, the second heating device can be driven to move in the axial direction to a position close to the top of the crucible by controlling the lifting device. The first heating device on the side periphery of the crucible and the second heating device disposed above the upper opening of the crucible heat the crucible at the same time, so that the crucible is heated evenly, thereby not only improving the conventional The heat energy of the crystal growth furnace is easily dissipated from the opening above the crucible, thereby causing a large amount of heat energy loss and increasing the output power of the heater. It can also improve the uneven temperature distribution of the crucible body and shorten the service life of the crucible. After the step of solid raw material in the crucible, the lifting device can be controlled to drive the second heating device to move away from the top of the crucible in the axial direction, so as to facilitate subsequent operations such as crystal pulling.

為能更清楚地說明本發明，茲舉數較佳實施例並配合圖式詳細說明如後。請參圖1所示，為本發明第一較佳實施例之長晶爐1，包括一爐體10、一坩堝20、一第一加熱裝置40、一第二加熱裝置60及一升降裝置80，該坩堝20設置於該爐體10中，用以容置待熔化之固態矽原料S，該坩堝20具有一上開口201，該第一加熱裝置40設置於該坩堝20的側邊外圍，用以對該坩堝20加熱，該第二加熱裝置60設置於該坩堝20之該上開口201上方，該第二加熱裝置60包括一加熱器62，該加熱器62面對該坩堝20的上開口201，該升降裝置80與該第二加熱裝置60連接，該升降裝置80能受控制地帶動該第二加熱裝置60於一軸向方向X上相對該坩堝20上下移動。In order to explain the present invention more clearly, the preferred embodiments are listed and described in detail with the drawings as follows. Referring to FIG. 1 , a crystal growth furnace 1 according to a first preferred embodiment of the present invention includes a furnace body 10 , a crucible 20 , a first heating device 40 , a second heating device 60 and a lifting device 80 , the crucible 20 is arranged in the furnace body 10 to accommodate the solid silicon raw material S to be melted, the crucible 20 has an upper opening 201, the first heating device 40 is arranged on the side periphery of the crucible 20, To heat the crucible 20 , the second heating device 60 is disposed above the upper opening 201 of the crucible 20 , and the second heating device 60 includes a heater 62 facing the upper opening 201 of the crucible 20 . , the lifting device 80 is connected with the second heating device 60 , and the lifting device 80 can drive the second heating device 60 to move up and down relative to the crucible 20 in an axial direction X in a controlled manner.

藉此，於進行熔化坩堝中之固態矽原料S的步驟時，能透過控制該升降裝置80帶動該第二加熱裝置60於該軸向方向X移動至接近該坩堝20上方的位置，如此一來，能透過設置於該坩堝20的側邊外圍之該第一加熱裝置40以及設置於該坩堝20之該上開口201上方之該第二加熱裝置60同時對該坩堝20進行加熱，而使得該坩堝20均勻受熱並避免熱能自該坩堝20之該上開口201上方逸散，以有效降低該第一加熱裝置40及該第二加熱裝置60輸出之總輸出功率，並延長該坩堝20之使用壽命，除此之外，透過設置於該坩堝20之該上開口201上方之該第二加熱裝置60能加速該坩堝20中接近該上開口之固態矽原料S之熔化；當完成熔化坩堝20中之固態矽原料S的步驟後，能透過控制該升降裝置80帶動該第二加熱裝置60於該軸向方向X移動至遠離該坩堝20上方的位置，以利後續例如拉晶之作業。Therefore, when the step of melting the solid silicon raw material S in the crucible is performed, the second heating device 60 can be moved in the axial direction X to a position close to the top of the crucible 20 by controlling the lifting device 80 . , the crucible 20 can be heated at the same time through the first heating device 40 disposed on the side periphery of the crucible 20 and the second heating device 60 disposed above the upper opening 201 of the crucible 20, so that the crucible 20 can be heated at the same time. 20 is uniformly heated and avoids heat energy from escaping from above the upper opening 201 of the crucible 20, so as to effectively reduce the total output power output by the first heating device 40 and the second heating device 60, and prolong the service life of the crucible 20, Besides, the melting of the solid silicon raw material S in the crucible 20 close to the upper opening can be accelerated through the second heating device 60 disposed above the upper opening 201 of the crucible 20; when the solid state in the crucible 20 is melted After the step of silicon raw material S, the lifting device 80 can be controlled to drive the second heating device 60 to move away from the top of the crucible 20 in the axial direction X, so as to facilitate subsequent operations such as crystal pulling.

再說明的是，該升降裝置80包含一支架82及一吊線84，該吊線84連接該支架82，該加熱器62具有兩連接部621分別連接於該支架82，於本實施例中，該加熱器62為一石墨加熱器，該石墨加熱器於該軸向方向X上之厚度為15~25mm，較佳為16.5~22.5 mm，且如圖2所示，該石墨加熱器於該二連接部間具有複數個彎折的加熱段622。Again, the lifting device 80 includes a bracket 82 and a suspension wire 84. The suspension wire 84 is connected to the bracket 82. The heater 62 has two connecting portions 621 respectively connected to the bracket 82. In this embodiment, the heating The device 62 is a graphite heater, and the thickness of the graphite heater in the axial direction X is 15-25 mm, preferably 16.5-22.5 mm, and as shown in FIG. 2, the graphite heater is located at the two connecting parts There are a plurality of bent heating segments 622 therebetween.

請再配合圖1，該長晶爐1包含一熱遮罩90，設置於該爐體10中並位於該坩堝20上方，該熱遮罩90呈錐狀且底部具有一開口901，該開口901之開口面積小於該坩堝20之開口面積，該熱遮罩90於該開口901上方具有一通道T，該通道T連通該坩堝20內部，該第二加熱裝置60設置於該通道T中，藉此，透過該熱遮罩90能避免坩堝20內溶液的飛濺及熱能自該坩堝20之該上開口201上方逸散。Please refer to FIG. 1 again. The crystal growth furnace 1 includes a heat shield 90 disposed in the furnace body 10 and located above the crucible 20 . The heat shield 90 is tapered and has an opening 901 at the bottom. The opening 901 The opening area is smaller than the opening area of the crucible 20, the heat shield 90 has a channel T above the opening 901, the channel T communicates with the inside of the crucible 20, the second heating device 60 is arranged in the channel T, thereby Through the heat shield 90 , the splash of the solution in the crucible 20 and the heat energy can be prevented from escaping from the upper opening 201 of the crucible 20 .

請配合圖3，為本發明第二較佳實施例之長晶爐2，該長晶爐2具有與第一佳實施例之長晶爐1大致相同之結構，不同的是，該長晶爐2之該第二加熱裝置60包含一上蓋64，該上蓋64由包含鉬或石墨之材質製成，該上蓋64、該加熱器62及該坩堝20是於該軸向方向X上依序設置，該上蓋64連接於該升降裝置80之該支架82，且該吊線84而能受控制地帶動該上蓋64與該加熱器62相對該坩堝20於該軸向方向X同時上下移動，且該上蓋64為罩狀，該上蓋64具有一容置空間R，該加熱器62設置於該容置空間R中，藉此，能有效避免熱能自該加熱器62上方以及該坩堝20之該上開口201上方逸散。Please refer to FIG. 3 , which is a crystal growth furnace 2 according to a second preferred embodiment of the present invention. The crystal growth furnace 2 has substantially the same structure as the crystal growth furnace 1 of the first preferred embodiment. The difference is that the crystal growth furnace The second heating device 60 of 2 includes an upper cover 64, the upper cover 64 is made of a material including molybdenum or graphite, the upper cover 64, the heater 62 and the crucible 20 are arranged in sequence in the axial direction X, The upper cover 64 is connected to the bracket 82 of the lifting device 80, and the suspension wire 84 can controllably drive the upper cover 64 and the heater 62 to move up and down relative to the crucible 20 in the axial direction X at the same time, and the upper cover 64 In the shape of a cover, the upper cover 64 has an accommodating space R, and the heater 62 is disposed in the accommodating space R, thereby effectively preventing thermal energy from passing from above the heater 62 and above the upper opening 201 of the crucible 20 escape.

進一步說明的是，該坩堝20於與該軸向方向X垂直的方向上具有一第一最大寬度D1，該上蓋64於與該軸向方向X垂直的方向上具有一第二最大寬度D2，該加熱器62於與該軸向方向X垂直的方向上具有一第三最大寬度D3，其中，該第一最大寬度D1與該第二最大寬度D2之比為1:0.4~1:0.8，較佳為1:0.45~1:0.7，該第一最大寬度D1與該第三最大寬度D3之寬度比為1:0.2~1:0.7，較佳為1:0.25~1:0.65，該第二最大寬度D2與該第三最大寬度D3之比為1:0.6~1:0.9，較佳為1:0.7~1:0.85，該上蓋64與該加熱器62間於該軸向方向X上具有一間距H，該坩堝20於該軸向方向X上之高度H1與該間距H之比為1:0.05~1:0.1，較佳為1:0.055~1:0.075，該上蓋64底部於該軸向方向X上與該熱遮罩90上表面間之最小距離H2小於或等於15mm，較佳為12 mm；該加熱器62與該坩堝20內熔化之固態矽原料S之液面間於該軸向方向X上具有一間距H3，該坩堝20於該軸向方向X上之高度H1與該間距H3之比為1:0.3~1:0.8，較佳為1:0.4~1:0.65。透過上述該坩堝20、該上蓋64及該加熱器62間之寬度比例的選擇，能提供較佳之加熱及防止熱能逸散之效果。It is further explained that the crucible 20 has a first maximum width D1 in the direction perpendicular to the axial direction X, the upper cover 64 has a second maximum width D2 in the direction perpendicular to the axial direction X, the The heater 62 has a third maximum width D3 in the direction perpendicular to the axial direction X, wherein the ratio of the first maximum width D1 to the second maximum width D2 is 1:0.4~1:0.8, preferably is 1:0.45~1:0.7, the width ratio of the first maximum width D1 to the third maximum width D3 is 1:0.2~1:0.7, preferably 1:0.25~1:0.65, the second maximum width The ratio of D2 to the third maximum width D3 is 1:0.6~1:0.9, preferably 1:0.7~1:0.85, and there is a distance H between the upper cover 64 and the heater 62 in the axial direction X , the ratio of the height H1 of the crucible 20 in the axial direction X to the distance H is 1:0.05~1:0.1, preferably 1:0.055~1:0.075, and the bottom of the upper cover 64 is in the axial direction X The minimum distance H2 between the upper surface of the heat shield 90 and the upper surface of the heat shield 90 is less than or equal to 15 mm, preferably 12 mm; between the heater 62 and the liquid level of the solid silicon raw material S melted in the crucible 20 in the axial direction X There is a distance H3 on the top, and the ratio of the height H1 of the crucible 20 in the axial direction X to the distance H3 is 1:0.3~1:0.8, preferably 1:0.4~1:0.65. Through the above-mentioned selection of the width ratio among the crucible 20 , the upper cover 64 and the heater 62 , the effect of better heating and preventing heat energy from escaping can be provided.

續請參閱下列表1，為本發明與比較例之長晶爐3於熔化固態矽原料的過程中的總輸出功率及坩堝溫差下降百分比之比較列表，其中，所述總輸出功率下降百分比是根據比較例之長晶爐3與實施例1、2、3之長晶爐1、2熔化坩堝中之固態矽原料S之輸出總功率之差與比較例之長晶爐3輸出總功率的比率計算所得，石墨坩堝溫差下降百分比及石英坩堝溫差下降百分比是根據比較例之長晶爐3與實施例1、2、3之坩堝的最大溫差之差值與比較例之長晶爐3之坩堝3a的最大溫差值的比率計算所得。Please refer to Table 1 below, which is a comparison table of the total output power and the reduction percentage of the temperature difference of the crucible in the process of melting the solid silicon raw material between the crystal growth furnace 3 of the present invention and the comparative example, wherein the reduction percentage of the total output power is based on Calculation of the ratio of the difference between the total output power of the crystal growth furnace 3 of the comparative example and the crystal growth furnaces 1 and 2 of the embodiment 1, 2 and 3 melting the solid silicon raw material S in the crucible and the total output power of the crystal growth furnace 3 of the comparative example The result, the percentage of temperature difference drop of graphite crucible and the percentage drop of temperature difference of quartz crucible are based on the difference between the maximum temperature difference between the crystal growth furnace 3 of the comparative example and the crucibles of Examples 1, 2 and 3 and the crucible 3a of the crystal growth furnace 3 of the comparative example. Calculated from the ratio of the maximum temperature difference values.

如圖5所示，比較例之長晶爐3僅於坩堝3a側邊外圍設置第一加熱裝置3b且未於坩堝3a上方設置第二加熱裝置，而實施例1是採用如圖1所示設置有加熱器62之長晶爐1，其總輸出功率下降百分比為10.32%、石墨坩堝溫差下降百分比為2.63%以及石英坩堝溫差下降百分比為2.45%。As shown in FIG. 5 , in the crystal growth furnace 3 of the comparative example, only the first heating device 3b is provided on the side periphery of the crucible 3a and the second heating device is not provided above the crucible 3a, while the embodiment 1 adopts the setting shown in FIG. 1 . For the crystal growth furnace 1 with the heater 62, the total output power reduction percentage is 10.32%, the temperature difference reduction percentage of the graphite crucible is 2.63%, and the temperature difference reduction percentage of the quartz crucible is 2.45%.

實施例 2、3是採用如圖3所示設置有加熱器62及上蓋64之長晶爐2進行熔化固態矽原料S之製程，且於實施例2中，該上蓋64是採用包含石墨之材質製成，其總輸出功率下降百分比為15.65%、石墨坩堝溫差下降百分比為4.22%以及石英坩堝溫差下降百分比為3.67%，相較於實施例1之長晶爐1，實施例2之長晶爐2因於坩堝3a上方設置設置上蓋64，故更能有效降低總輸出功率及降低坩堝溫度；於實施例3中，該上蓋64是採用包含鉬之材質製成，其總輸出功率下降百分比24.09%、石墨坩堝溫差下降百分比為5.72%以及石英坩堝溫差下降百分比為4.84%，相較於實施例1、2之長晶爐，實施例3之長晶爐因設置包含熱傳導係數低之材質製成的上蓋64，能提供坩堝較好的保溫效果，因此更能有效降低總輸出功率及降低坩堝溫度。Embodiments 2 and 3 use the crystal growth furnace 2 provided with the heater 62 and the upper cover 64 as shown in FIG. 3 to perform the process of melting the solid silicon raw material S, and in the second embodiment, the upper cover 64 is made of a material including graphite. The reduction percentage of the total output power is 15.65%, the reduction percentage of the temperature difference of the graphite crucible is 4.22%, and the reduction percentage of the temperature difference of the quartz crucible is 3.67%. Compared with the crystal growth furnace 1 of Example 1, the crystal growth furnace of Example 2 2. Because the upper cover 64 is arranged above the crucible 3a, the total output power and the temperature of the crucible can be effectively reduced; in Example 3, the upper cover 64 is made of a material including molybdenum, and the total output power is reduced by 24.09%. , The percentage of drop in temperature difference of graphite crucible is 5.72% and the percentage of drop in temperature difference of quartz crucible is 4.84%. Compared with the crystal growth furnaces of Examples 1 and 2, the crystal growth furnace of Example 3 is made of materials with a low thermal conductivity. The upper cover 64 can provide better heat preservation effect of the crucible, so it can more effectively reduce the total output power and reduce the temperature of the crucible.

根據表1所示，可知相較比較例之長晶爐3僅於坩堝3a側邊外圍設置第一加熱裝置3b且未於坩堝3a上方設置第二加熱裝置，採用如圖1所示設置有加熱器62之長晶爐1及如圖3所示設置有加熱器62及上蓋64之長晶爐2進行熔化固態矽原料S之製程能大幅降低總輸出功率，且能有效降低坩堝之溫度，提升坩堝使用壽命。As shown in Table 1, it can be seen that compared with the crystal growth furnace 3 of the comparative example, only the first heating device 3b is provided on the side periphery of the crucible 3a and the second heating device is not provided above the crucible 3a. The process of melting the solid silicon raw material S in the crystal growth furnace 1 of the device 62 and the crystal growth furnace 2 provided with the heater 62 and the upper cover 64 as shown in FIG. Crucible service life.

表1   總輸出功率 (KW) 第一加熱裝置輸出功率 (KW) 第二加熱裝置輸出功率 (KW) 總輸出功率下降百分比 （%） 石墨坩堝溫差下降百分比 （%） 石英坩堝溫差下降百分比 （%） 比較例1 58.03 58.03 - - - - 實施例1 52.04 47.04 5 10.32 2.63 2.45 實施例2 48.95 43.95 5 15.65 4.22 3.67 實施例3 46.05 41.05 5 24.09 5.72 4.84 Table 1 Total output power (KW) Output power of the first heating device (KW) The output power of the second heating device (KW) Total output power drop percentage (%) Graphite crucible temperature difference drop percentage (%) Quartz crucible temperature difference drop percentage (%) Comparative Example 1 58.03 58.03 - - - - Example 1 52.04 47.04 5 10.32 2.63 2.45 Example 2 48.95 43.95 5 15.65 4.22 3.67 Example 3 46.05 41.05 5 24.09 5.72 4.84

綜上所述，透過本發明之長晶爐，於進行熔化坩堝20中之固態矽原料S的步驟時，能控制該升降裝置80帶動該第二加熱裝置60於該軸向方向X移動至接近該坩堝20上方的位置，以透過設置於該坩堝20的側邊外圍之該第一加熱裝置40以及設置於該坩堝20之該上開口201上方之該第二加熱裝置60同時對該坩堝20進行加熱，而使得該坩堝20均勻受熱並避免熱能自該坩堝20之該上開口201上方逸散，達成有效降低該第一加熱裝置40及該第二加熱裝置60輸出之總輸出功率，及延長該坩堝20之使用壽命之功效，除此之外，透過設置於該坩堝20之該上開口201上方之該第二加熱裝置60還能達成加速該坩堝20中接近該上開口201之固態矽原料S之熔化的效果；而當完成熔化坩堝20中之固態矽原料S的步驟後，能透過控制該升降裝置80帶動該第二加熱裝置60於該軸向方向X移動至遠離該坩堝20上方的位置，以利後續進行例如拉晶之作業。To sum up, through the crystal growth furnace of the present invention, when the step of melting the solid silicon raw material S in the crucible 20 is performed, the lifting device 80 can be controlled to drive the second heating device 60 to move in the axial direction X to close to The position above the crucible 20 is for simultaneously heating the crucible 20 through the first heating device 40 disposed on the side periphery of the crucible 20 and the second heating device 60 disposed above the upper opening 201 of the crucible 20 heating, so that the crucible 20 is uniformly heated and avoids heat energy from escaping from above the upper opening 201 of the crucible 20, so as to effectively reduce the total output power output by the first heating device 40 and the second heating device 60, and prolong the In addition to the effect of the service life of the crucible 20, the second heating device 60 disposed above the upper opening 201 of the crucible 20 can also accelerate the solid silicon raw material S in the crucible 20 close to the upper opening 201. and after the step of melting the solid silicon raw material S in the crucible 20 is completed, the second heating device 60 can be moved in the axial direction X to a position away from the top of the crucible 20 by controlling the lifting device 80 , so as to facilitate subsequent operations such as crystal pulling.

以上所述僅為本發明較佳可行實施例而已，舉凡應用本發明說明書及申請專利範圍所為之等效變化，理應包含在本發明之專利範圍內。The above descriptions are only preferred feasible embodiments of the present invention, and any equivalent changes made by applying the description of the present invention and the scope of the patent application should be included in the patent scope of the present invention.

［本發明］ 1,2:長晶爐 10:爐體 20:坩堝 201:上開口 40:第一加熱裝置 60:第二加熱裝置 62:加熱器 621:連接部 622:加熱段 64:上蓋 80:升降裝置 82:支架 84:吊線 90:熱遮罩 901:開口 D1:第一最大寬度 D2:第二最大寬度 D3:第三最大寬度 H:間距 H1:高度 H2:最小距離 H3:間距 R:容置空間 S:固態矽原料 T:通道 X:軸向方向 S:固態矽原料 ［比較例］ 3:長晶爐 3a:坩堝 3b:第一加熱裝置 S:固態矽原料 [this invention] 1,2: Crystal growth furnace 10: Furnace body 20: Crucible 201: upper opening 40: The first heating device 60: Second heating device 62: Heater 621: Connector 622: Heating section 64: upper cover 80: Lifting device 82: Bracket 84: hanging wire 90: Thermal Mask 901: Opening D1: The first maximum width D2: Second largest width D3: The third maximum width H: Spacing H1: height H2: Minimum distance H3: Spacing R: accommodation space S: solid silicon raw material T: channel X: Axial direction S: solid silicon raw material [Comparative example] 3: Crystal growth furnace 3a: Crucible 3b: The first heating device S: solid silicon raw material

圖1為本發明第一較佳實施例之長晶爐的示意圖。 圖2為上述較佳實施例之加熱器的示意圖。 圖3為本發明第二較佳實施例之長晶爐的示意圖。 圖4為本發明第二較佳實施例之長晶爐部分構件放大示意圖。 圖5為比較例之長晶爐的示意圖。 FIG. 1 is a schematic diagram of a crystal growth furnace according to a first preferred embodiment of the present invention. FIG. 2 is a schematic diagram of the heater of the above preferred embodiment. 3 is a schematic diagram of a crystal growth furnace according to a second preferred embodiment of the present invention. 4 is an enlarged schematic view of some components of the crystal growth furnace according to the second preferred embodiment of the present invention. FIG. 5 is a schematic diagram of a crystal growth furnace of a comparative example.

1:長晶爐 1: Crystal growth furnace

10:爐體 10: Furnace body

201:上開口 201: upper opening

40:第一加熱裝置 40: The first heating device

60:第二加熱裝置 60: Second heating device

62:加熱器 62: Heater

80:升降裝置 80: Lifting device

82:支架 82: Bracket

84:吊線 84: hanging wire

90:熱遮罩 90: Thermal Mask

901:開口 901: Opening

D1:第一最大寬度 D1: The first maximum width

H1:高度 H1: height

S:固態矽原料 S: solid silicon raw material

T:通道 T: channel

X:軸向方向 X: Axial direction

Claims (10)

一種長晶爐，包含：一爐體；一坩堝，設置於該爐體中，用以容置待熔化之固態原料，該坩堝具有一上開口；一第一加熱裝置，設置於該坩堝的側邊外圍，用以對該坩堝加熱；一第二加熱裝置，設置於該坩堝之該上開口上方，該第二加熱裝置包括一加熱器，該加熱器面對該坩堝的上開口；一升降裝置，與該第二加熱裝置連接，該升降裝置能受控制地帶動該第二加熱裝置於一軸向方向上相對該坩堝上下移動；一熱遮罩，設置於該爐體中並位於該坩堝上方，該熱遮罩呈錐狀且底部具有一開口，該開口之開口面積小於該坩堝之開口面積，該熱遮罩於該開口上方具有一通道，該通道連通該坩堝內部，該第二加熱裝置設置於該通道中；其中該第二加熱裝置包含一上蓋，該上蓋、該加熱器及該坩堝是於該軸向方向上依序設置；其中該上蓋底部於該軸向方向上與該熱遮罩上表面間之最小距離小於或等於15mm。 A crystal growth furnace, comprising: a furnace body; a crucible arranged in the furnace body for accommodating solid raw materials to be melted, the crucible having an upper opening; a first heating device arranged on the side of the crucible a peripheral edge for heating the crucible; a second heating device disposed above the upper opening of the crucible, the second heating device comprising a heater facing the upper opening of the crucible; a lifting device , connected with the second heating device, the lifting device can be controlled to drive the second heating device to move up and down relative to the crucible in an axial direction; a heat shield is arranged in the furnace body and located above the crucible , the heat shield is tapered and has an opening at the bottom, the opening area of the opening is smaller than the opening area of the crucible, the heat shield has a channel above the opening, the channel communicates with the inside of the crucible, the second heating device disposed in the channel; wherein the second heating device comprises an upper cover, the upper cover, the heater and the crucible are arranged in sequence in the axial direction; wherein the bottom of the upper cover is in the axial direction with the heat shield The minimum distance between the top surfaces of the cover is less than or equal to 15mm. 如請求項1所述之長晶爐，其中該上蓋與該升降裝置連接，該升降裝置能受控制地帶動該上蓋及該加熱器相對該坩堝於該軸向方向同時上下移動。 The crystal growth furnace of claim 1, wherein the upper cover is connected to the lifting device, and the lifting device can controllably drive the upper cover and the heater to move up and down relative to the crucible in the axial direction simultaneously. 如請求項1所述之長晶爐，其中該坩堝於與該軸向方向垂直的方向上具有一第一最大寬度，該上蓋於與該軸向方向垂直的方向上 具有一第二最大寬度，該第一最大寬度與該第二最大寬度之比為1：0.4~1：0.8。 The crystal growth furnace of claim 1, wherein the crucible has a first maximum width in a direction perpendicular to the axial direction, and the upper cover is in a direction perpendicular to the axial direction It has a second maximum width, and the ratio of the first maximum width to the second maximum width is 1:0.4~1:0.8. 如請求項1所述之長晶爐，其中該上蓋於與該軸向方向垂直的方向上具有一第二最大寬度，該加熱器於與該軸向方向垂直的方向上具有一第三最大寬度，該第二最大寬度與該第三最大寬度之比為1：0.6~1：0.9。 The crystal growth furnace of claim 1, wherein the upper cover has a second maximum width in a direction perpendicular to the axial direction, and the heater has a third maximum width in a direction perpendicular to the axial direction , the ratio of the second maximum width to the third maximum width is 1:0.6~1:0.9. 如請求項1所述之長晶爐，其中該上蓋與該加熱器間於該軸向方向上具有一間距，該坩堝於該軸向方向上之高度與該間距之比為1：0.05~1：0.1。 The crystal growth furnace according to claim 1, wherein there is a distance between the upper cover and the heater in the axial direction, and the ratio of the height of the crucible in the axial direction to the distance is 1:0.05~1 : 0.1. 如請求項1所述之長晶爐，其中該上蓋為罩狀，該上蓋具有一容置空間，該加熱器設置於該容置空間中。 The crystal growth furnace of claim 1, wherein the upper cover is in the shape of a cover, the upper cover has an accommodating space, and the heater is arranged in the accommodating space. 如請求項1所述之長晶爐，其中該上蓋由包含鉬或石墨之材質製成。 The crystal growth furnace of claim 1, wherein the upper cover is made of a material containing molybdenum or graphite. 如請求項1所述之長晶爐，其中該坩堝於與該軸向方向垂直的方向上具有一第一最大寬度，該加熱器於與該軸向方向垂直的方向上具有一第三最大寬度，該第一最大寬度與該第三最大寬度之寬度比為1：0.2~1：0.7。 The crystal growth furnace of claim 1, wherein the crucible has a first maximum width in a direction perpendicular to the axial direction, and the heater has a third maximum width in a direction perpendicular to the axial direction , the width ratio of the first maximum width to the third maximum width is 1:0.2~1:0.7. 如請求項1所述之長晶爐，其中該加熱器與該坩堝液面間於該軸向方向上具有一間距，該坩堝於該軸向方向上之高度與該間距之比為1：0.3~1：0.8。 The crystal growth furnace of claim 1, wherein there is a distance between the heater and the liquid level of the crucible in the axial direction, and the ratio of the height of the crucible in the axial direction to the distance is 1:0.3 ~1:0.8. 一種長晶爐，包含：一爐體；一坩堝，設置於該爐體中，用以容置待熔化之固態原料，該坩堝具有一上開口； 一第一加熱裝置，設置於該坩堝的側邊外圍，用以對該坩堝加熱；一第二加熱裝置，設置於該坩堝之該上開口上方，該第二加熱裝置包括一加熱器，該加熱器面對該坩堝的上開口；一升降裝置，與該第二加熱裝置連接，該升降裝置能受控制地帶動該第二加熱裝置於一軸向方向上相對該坩堝上下移動，其中該升降裝置包含一支架及一吊線，該吊線連接該支架，該加熱器具有兩連接部分別連接於該支架；其中該加熱器為一石墨加熱器，該石墨加熱器於該軸向方向上之厚度為15~25mm，該石墨加熱器於該二連接部間具有複數個彎折的加熱段。 A crystal growth furnace, comprising: a furnace body; a crucible arranged in the furnace body for accommodating solid raw materials to be melted, the crucible having an upper opening; A first heating device is arranged on the outer periphery of the crucible for heating the crucible; a second heating device is arranged above the upper opening of the crucible, the second heating device includes a heater, the heating The upper opening of the crucible is facing the upper opening of the crucible; a lifting device is connected with the second heating device, and the lifting device can be controlled to drive the second heating device to move up and down relative to the crucible in an axial direction, wherein the lifting device It includes a bracket and a suspension wire, the suspension wire is connected to the bracket, and the heater has two connecting parts respectively connected to the bracket; wherein the heater is a graphite heater, and the thickness of the graphite heater in the axial direction is 15 mm ~25mm, the graphite heater has a plurality of bent heating sections between the two connecting parts.
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