TWI758311B - 形成結晶片的設備以及方法 - Google Patents

形成結晶片的設備以及方法 Download PDF

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Publication number
TWI758311B
TWI758311B TW106128060A TW106128060A TWI758311B TW I758311 B TWI758311 B TW I758311B TW 106128060 A TW106128060 A TW 106128060A TW 106128060 A TW106128060 A TW 106128060A TW I758311 B TWI758311 B TW I758311B
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TW
Taiwan
Prior art keywords
gas
crystallizer
melt
channel
block
Prior art date
Application number
TW106128060A
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English (en)
Chinese (zh)
Other versions
TW201829855A (zh
Inventor
彼德 L. 凱勒曼
布萊恩 D. 柯南
菲德梨克 M. 卡爾森
大為 孫
大衛 莫雷爾
Original Assignee
美商瓦里安半導體設備公司
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Publication of TW201829855A publication Critical patent/TW201829855A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
TW106128060A 2016-09-16 2017-08-18 形成結晶片的設備以及方法 TWI758311B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662395732P 2016-09-16 2016-09-16
US62/395,732 2016-09-16
US15/455,437 2017-03-10
US15/455,437 US10179958B2 (en) 2016-09-16 2017-03-10 Apparatus and method for crystalline sheet growth

Publications (2)

Publication Number Publication Date
TW201829855A TW201829855A (zh) 2018-08-16
TWI758311B true TWI758311B (zh) 2022-03-21

Family

ID=61618376

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106128060A TWI758311B (zh) 2016-09-16 2017-08-18 形成結晶片的設備以及方法

Country Status (7)

Country Link
US (1) US10179958B2 (https=)
EP (1) EP3512989A4 (https=)
JP (1) JP7037553B2 (https=)
KR (1) KR102405193B1 (https=)
CN (1) CN109923246B (https=)
TW (1) TWI758311B (https=)
WO (1) WO2018052693A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220145494A1 (en) * 2019-05-13 2022-05-12 Leading Edge Crystal Technologies, Inc. Exposure of a silicon ribbon to gas in a furnace

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
TW201139761A (en) * 2010-05-06 2011-11-16 Varian Semiconductor Equipment Removing a sheet from the surface of a melt using gas jets

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Publication number Priority date Publication date Assignee Title
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes
JPS5261180A (en) 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
JPS5361577A (en) * 1976-11-15 1978-06-02 Agency Of Ind Science & Technol Growing method for horizontally pulled ribbon crystal
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
CN101522960B (zh) 2006-09-28 2012-07-25 Amg艾迪卡斯特太阳能公司 用于生产晶体硅基板的方法和设备
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US7816153B2 (en) 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US9567691B2 (en) * 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
CN201244377Y (zh) * 2008-08-04 2009-05-27 宁波志华化学有限公司 一种分步结晶装置
US20100080905A1 (en) * 2008-09-30 2010-04-01 Varian Semiconductor Equipment Associates, Inc. Solute stabilization of sheets formed from a melt
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
US8790460B2 (en) 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
US9970125B2 (en) 2012-02-17 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
US20130213296A1 (en) 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt
US9957636B2 (en) 2014-03-27 2018-05-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
TW201139761A (en) * 2010-05-06 2011-11-16 Varian Semiconductor Equipment Removing a sheet from the surface of a melt using gas jets

Also Published As

Publication number Publication date
US10179958B2 (en) 2019-01-15
CN109923246B (zh) 2022-02-18
KR20190043174A (ko) 2019-04-25
JP2019529312A (ja) 2019-10-17
KR102405193B1 (ko) 2022-06-07
EP3512989A4 (en) 2020-05-13
JP7037553B2 (ja) 2022-03-16
CN109923246A (zh) 2019-06-21
US20180080142A1 (en) 2018-03-22
WO2018052693A1 (en) 2018-03-22
TW201829855A (zh) 2018-08-16
EP3512989A1 (en) 2019-07-24

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