TWI758281B - Exposure device, stage calibration system, stage calibration method, and calibration jig - Google Patents
Exposure device, stage calibration system, stage calibration method, and calibration jig Download PDFInfo
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- TWI758281B TWI758281B TW106109891A TW106109891A TWI758281B TW I758281 B TWI758281 B TW I758281B TW 106109891 A TW106109891 A TW 106109891A TW 106109891 A TW106109891 A TW 106109891A TW I758281 B TWI758281 B TW I758281B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Abstract
用比平台驅動區域小的參考板校正平台的驅動精 確度。 Use a reference plate that is smaller than the stage drive area to calibrate the drive accuracy of the stage accuracy.
具有用參考板建立移動平台之移動精確度的 校正資訊的校正部的曝光裝置,包括用載置於移動平台之第1量測區域的參考板建立第1校正資訊、並用載置於與第1量測區域有重複區域之至少1個第2量測區域的參考板建立第2校正資訊的校正部。 with the accuracy of movement to build a mobile platform with a reference board The exposure device of the calibration section for calibration information includes creating first calibration information with a reference plate placed on a first measurement area of a mobile platform, and using at least one second calibration plate placed in an area overlapping with the first measurement area The reference plate of the measurement area establishes the calibration part of the second calibration information.
Description
本發明係關於曝光裝置、平台校正系統以及平台校正方法,更詳細而言,關於用參考板建立校正資訊並修正移動平台之驅動精確度的曝光裝置、平台校正系統、平台校正方法以及校正時所使用的校正治具。 The present invention relates to an exposure device, a platform calibration system, and a platform calibration method, and more particularly, to an exposure device, a platform calibration system, a platform calibration method, and a calibration method for establishing calibration information using a reference plate and correcting the driving accuracy of a mobile platform. Correction jig used.
習知上,製造半導體封裝基板的微影(lithography)製程中,主要使用步進重複(step-and-repeat)方式之縮小投影曝光裝置、步進掃描(step-and-scan)方式之投影曝光裝置等。 Conventionally, in the lithography process of manufacturing semiconductor packaging substrates, the step-and-repeat method of reduction projection exposure device and the step-and-scan method of projection exposure are mainly used device etc.
這些曝光裝置中,已形成於基板上之電路圖樣(pattern)與即將重疊曝光至其上之電路圖樣間的對準,即疊合(superposition),需要高精確度。 In these exposure apparatuses, the alignment between the circuit pattern formed on the substrate and the circuit pattern to be superimposed and exposed thereon, that is, superposition, requires high precision.
至今的曝光裝置中,雖使用雷射干涉儀量測持定被曝光基板之基板平台的位置以實現高精確度的疊合,但無法忽略雷射干涉儀之光束光徑上因大氣的溫度波動(空氣波動)所致的量測值的短期變動。 In the current exposure devices, although a laser interferometer is used to measure the position of the substrate platform that holds the substrate to be exposed to achieve high-precision superposition, the temperature fluctuations of the atmosphere on the beam path of the laser interferometer cannot be ignored. Short-term changes in measured values due to (air fluctuations).
因此,開發用比干涉儀不易受空氣波動影響的編碼器(encoder)進行晶圓平台的位置量測、用被授與已知之位置關係中之複數個標記的參考晶圓定位基板平台並同時檢測複數個標記的每一者、根據所檢測之定位位置與目標位置建立修正基板平 台之驅動精確度的校正資訊的曝光裝置(例如,專利文獻1)。 Therefore, an encoder that is less susceptible to air fluctuations than an interferometer is developed to measure the position of the wafer stage, and to position the substrate stage with a reference wafer that is assigned a plurality of marks in a known positional relationship, and simultaneously detect Each of the plurality of marks establishes a corrected substrate plane based on the detected positioning position and the target position Exposure apparatus for correcting information of the drive accuracy of the stage (for example, Patent Document 1).
習知的半導體封裝基板係使用晶圓,但近年來已嘗試使用比晶圓大型的矩形基板。更詳細而言,習知上係使用被稱作FAN-IN WLP的在半導體晶片上形成重接線(rewiring)、絕緣膜、桿(post)後切割分離的封裝技術,但近年來係使用被稱作FAN-OUT WLP的將切割分離之晶片再構成至基板上並形成重接線、絕緣膜、桿的封裝技術,在此情況下,用於再構成之基板不只使用晶片,亦嘗試使用更大型的矩形基板。 Conventional semiconductor packaging substrates use wafers, but in recent years, attempts have been made to use rectangular substrates larger than wafers. More specifically, conventionally, a packaging technology called FAN-IN WLP is used to form rewiring, insulating film, and post on a semiconductor wafer, and then dicing and separation, but in recent years, it is called FAN-IN WLP. For FAN-OUT WLP, the diced and separated chips are reconstructed onto the substrate and the packaging technology to form rewiring, insulating films, and rods. In this case, the substrate for reconstruction not only uses chips, but also tries to use larger Rectangular base plate.
由於基板大型化,曝光裝置的基板平台係大型化,曝光時的基板平台驅動區域亦變大。因此,用於基本平台校正之參考板(與參考晶圓相同,被授與已知之位置關係中之複數個標記的板)需要大型化。另外,對於標線片平台亦相同,隨著曝光面積之放大或縮小投影光學系統的高倍率化,標線片平台係大型化,因此,用於校正之參考板需要大型化。 Due to the enlargement of the substrate, the size of the substrate stage of the exposure apparatus is increased, and the driving area of the substrate stage at the time of exposure also increases. Therefore, the reference plate used for basic stage calibration (same as the reference wafer, the plate that is assigned a plurality of marks in a known positional relationship) needs to be enlarged. In addition, the same is true for the reticle stage. With the enlargement or reduction of the exposure area and the high magnification of the projection optical system, the reticle stage becomes larger, so the reference plate used for calibration needs to be enlarged.
【先前技術文獻】 【Prior technical literature】
【專利文獻】 【Patent Literature】
專利文獻1特開2009-164306號公報
在參考板上形成複數個標記時雖使用光蝕刻(photolithography)製程,但大型的板狀部件因熱膨脹等的影響容易產生歪曲。另外,由於光蝕刻裝置也使用大型的平台,描繪於參考板上之標記的位置誤差容易變大。因此,大型的參考板相較於小型的參考板更容易產生參考板的配置誤差。 Although a photolithography process is used to form a plurality of marks on the reference plate, large plate-shaped parts are easily distorted due to thermal expansion and the like. In addition, since the photolithography apparatus also uses a large stage, the positional error of the marks drawn on the reference plate tends to increase. Therefore, a large reference board is more prone to configuration errors of the reference board than a small reference board.
因此,用比校正對象之移動平台(平台)驅動區域小的參考板,希望修正移動平台之驅動區域整體的驅動精確度。 Therefore, it is desired to correct the driving accuracy of the entire driving area of the moving platform by using a reference plate that is smaller than the driving area of the moving platform (platform) to be calibrated.
本發明之曝光裝置為包括用參考板建立移動平台之移動精確度的校正資訊的校正部的曝光裝置,包括用載置於移動平台之第1量測區域的參考板建立第1校正資訊,並用載置於與第1量測區域有重複區域之至少1個第2量測區域的上述參考板建立第2校正資訊的上述校正部。最好有將移動平台之載置面(載置參考板、基板、標線片等的面)分割為複數(例如為四分)而得的複數個第2量測區域。另外,本發明之曝光裝置,包括根據移動平台之移動檢測載置於移動平台之參考板之複數個標記的位置的檢測部,校正部從檢測之標記位置與此時的移動平台位置之間的關係,建立修正移動平台之移動精確度的修正地圖。再者,校正部根據第1校正資訊與第2校正資訊,建立對應至移動平台之第1量測區域與第2量測區域結合之區域的校正資訊。 The exposure apparatus of the present invention is an exposure apparatus including a calibration section that uses a reference plate to establish calibration information for the movement accuracy of the moving platform, and includes establishing the first calibration information using a reference plate placed on a first measurement area of the moving platform, and using The calibration section for establishing the second calibration information is placed on the reference plate in at least one second measurement area that overlaps with the first measurement area. It is preferable to have a plurality of second measurement regions obtained by dividing the mounting surface of the mobile stage (surface on which the reference plate, substrate, reticle, etc. are mounted) into plural (for example, quarters). In addition, the exposure apparatus of the present invention includes a detection unit that detects the positions of a plurality of marks placed on the reference plate of the mobile platform based on the movement of the mobile platform, and the correction unit measures the distance between the detected mark position and the current position of the mobile platform. relationship, creating a correction map that corrects the movement accuracy of the mobile platform. Furthermore, the calibration unit establishes calibration information corresponding to the combined area of the first measurement area and the second measurement area of the mobile platform according to the first calibration information and the second calibration information.
藉由此種曝光裝置,即使在參考板相對於移動平台載置板狀體之面(即移動平台的驅動範圍)為小的情況下,仍可校正移動平台的移動精確度。 With this exposure device, even when the reference plate is small relative to the surface on which the plate-like body is placed (ie, the driving range of the moving platform), the movement accuracy of the moving platform can be corrected.
另外,本發明之曝光裝置,校正部根據位於載置於上述第2量測區域之參考板的重複區域的標記的位置,修正載置於第2量測區域之參考板的位置誤差以建立第2校正資訊。藉由此種曝光裝置,可修正因載置參考板於不同量測區域所造成的誤差,並以第1量測區域為參考建立對應至其他量測區域的校正資訊。 In addition, in the exposure apparatus of the present invention, the correction section corrects the positional error of the reference plate placed in the second measurement area based on the position of the mark located in the overlapping area of the reference plate placed in the second measurement area to establish the second measurement area. 2 Correction information. With this exposure device, errors caused by placing the reference plate in different measurement areas can be corrected, and correction information corresponding to other measurement areas can be established with the first measurement area as a reference.
本發明之平台校正系統為用參考板校正移動平台 的平台校正系統,包括用載置於移動平台之第1量測區域的參考板建立第1校正資訊、用載置於與第1量測區域有重複區域之至少1個第2量測區域的參考板建立第2校正資訊的校正部。藉由此種平台校正系統,即使在參考板相對於移動平台為小的情況下,仍可校正移動平台的移動精確度。 The platform calibration system of the present invention uses the reference plate to calibrate the mobile platform The platform calibration system includes establishing first calibration information with a reference plate placed in the first measurement area of the mobile platform, and using a reference plate placed in at least one second measurement area that overlaps with the first measurement area. The reference plate establishes a calibration part of the second calibration information. With this platform correction system, even when the reference plate is small relative to the mobile platform, the movement accuracy of the mobile platform can be corrected.
另外,本發明之平台校正方法,包括:將參考板載置於移動平台之第1量測區域的步驟;檢測單元根據移動平台的移動檢測上述參考板之複數個標記的位置的步驟;校正單元從複數個標記的位置建立對應至第1量測區域的第1校正資訊的步驟;將參考板載置於與第1量測區域有重複區域之至少1個第2量測區域的步驟;檢測單元根據移動平台的移動檢測複數個標記的位置的步驟;校正單元從複數個標記的位置建立對應至第2量測區域的第2校正資訊的步驟;以及校正單元根據第1校正資訊與第2校正資訊建立修正移動平台之移動精確度的校正資訊的步驟。 In addition, the platform calibration method of the present invention includes: a step of placing a reference plate in the first measurement area of the mobile platform; a step of detecting the position of a plurality of marks on the reference plate by a detection unit according to the movement of the mobile platform; a calibration unit The step of establishing the first calibration information corresponding to the first measurement area from the positions of the plurality of marks; the step of placing the reference board in at least one second measurement area which overlaps with the first measurement area; the step of detecting The unit detects the positions of the plurality of marks according to the movement of the mobile platform; the calibration unit establishes the second calibration information corresponding to the second measurement area from the positions of the plurality of marks; and the calibration unit is based on the first calibration information and the second The calibration information is a step of creating calibration information for revising the movement accuracy of the mobile platform.
藉由此種校正方法,可建立對應至比參考板大小更廣之區域的校正資訊。 With this calibration method, calibration information corresponding to an area wider than the size of the reference plate can be created.
另外,將參考板載置於第2量測區域的步驟中,若將複數個參考板載置於上述載置部,可更提高作業效率。 In addition, in the step of placing the reference plate on the second measurement area, if a plurality of reference plates are placed on the above-mentioned placing portion, the work efficiency can be further improved.
另外,本發明之校正方法,更包括:檢測單元檢測位於複數個第2量測區域之重複區域的標記的位置的步驟;以及校正部根據重複區域之複數個標記的位置求得載置於第2量測區域之各參考板的標記位置誤差的步驟。藉此,可修正各參考板的標記位置誤差(包含參考板的設置誤差),並以第1量測區域為參考建立對應至其他量測區域的校正資訊。 In addition, the calibration method of the present invention further includes: the detection unit detects the position of the mark located in the overlapping area of the plurality of second measurement areas; and the calibration unit obtains the position of the mark placed on the 2. The step of measuring the mark position error of each reference plate in the area. Thereby, the mark position error of each reference plate (including the setting error of the reference plate) can be corrected, and the calibration information corresponding to other measurement regions can be established with the first measurement region as a reference.
另外,代替將複數個參考板載置於第2量測區域,亦可使用包括板狀基材與複數個參考板、在將基材載置於移動平台時以分別置於對應至複數個量測區域(第2量測區域)之位置的方式將上述複數個參考板固定至基材的校正治具。藉由使用此種校正治具,可更提高作業性。 In addition, instead of placing a plurality of reference plates on the second measurement area, a plate-shaped base material and a plurality of reference plates may be used, and when the base material is placed on the moving platform, they may be placed corresponding to a plurality of amounts respectively. The calibration jig for fixing the above-mentioned reference plates to the base material by means of the position of the measuring area (second measuring area). By using such a calibration jig, workability can be further improved.
根據本發明,用比移動平台之驅動區域小的參考板,更精確地建立用於修正移動平台驅動精確度的校正資訊,而可修正移動平台的驅動精確度。 According to the present invention, the correction information for correcting the driving accuracy of the mobile platform can be more accurately established by using the reference plate smaller than the driving area of the mobile platform, and the driving accuracy of the mobile platform can be corrected.
10:曝光裝置 10: Exposure device
20‧‧‧光源 20‧‧‧Light source
21‧‧‧燈驅動部 21‧‧‧Light Driver
22、26‧‧‧鏡 22, 26‧‧‧Mirror
24‧‧‧積分器 24‧‧‧Integrator
28‧‧‧準直透鏡 28‧‧‧Collimating Lens
30‧‧‧標線片平台 30‧‧‧Reticle Platform
32、42‧‧‧平台驅動部 32, 42‧‧‧Platform Drive Department
34‧‧‧投影光學系統 34‧‧‧Projection Optical System
36、37‧‧‧攝影部 36, 37‧‧‧Photography Department
38‧‧‧影像處理部 38‧‧‧Image Processing Department
40‧‧‧基板平台 40‧‧‧Substrate platform
43‧‧‧量測部 43‧‧‧Measurement Department
50‧‧‧控制部 50‧‧‧Control Department
51‧‧‧記憶部 51‧‧‧Memory Department
52‧‧‧校正部 52‧‧‧Correction Department
AS‧‧‧整體區域 AS‧‧‧Overall area
AS1~AS5‧‧‧量測區域 AS1~AS5‧‧‧Measurement area
M11、M1n、Mm1、Mmn、Mij、M2ij‧‧‧參考標記 M11, M1n, Mm1, Mmn, Mij, M2ij‧‧‧reference marks
PB‧‧‧基材 PB‧‧‧Substrate
PSP1~PSP4‧‧‧參考板部件 PSP1~PSP4‧‧‧Reference Board Components
Px、Py‧‧‧間距 Px, Py‧‧‧spacing
R‧‧‧標線片 R‧‧‧Reticles
SP、SP、2SPa~SPd‧‧‧參考板 SP, SP, 2SPa~SPd‧‧‧reference board
W‧‧‧基板 W‧‧‧Substrate
第1圖係本發明之曝光裝置的概略區塊圖。 Fig. 1 is a schematic block diagram of the exposure apparatus of the present invention.
第2圖係表示第1實施型態的參考板SP、排列於參考板SP之參考標記Mij的圖。 FIG. 2 is a diagram showing the reference plate SP according to the first embodiment, and the reference marks Mij arranged on the reference plate SP.
第3圖係表示第1實施型態的基板平台40、量測區域AS1~AS5的圖。
FIG. 3 is a diagram showing the
第4圖係表示第1實施型態中參考板SP載置於基板平台40之量測區域AS1之狀態的圖。
FIG. 4 is a diagram showing a state in which the reference board SP is placed on the measurement area AS1 of the
第5圖係表示第1實施型態中量測區域AS1之修正地圖CM1之一部分資料的表格。 FIG. 5 is a table showing a part of data of the correction map CM1 of the measurement area AS1 in the first embodiment.
第6圖係表示第1實施型態中參考板SP載置於基板平台40之量測區域AS2之狀態的圖。
FIG. 6 is a diagram showing a state in which the reference board SP is placed on the measurement area AS2 of the
第7圖係表示第1實施型態的基板平台40之驅動精確度校正方法的流程圖。
FIG. 7 is a flowchart showing a driving accuracy calibration method of the
第8圖係表示第2實施型態中在基板平台40配置參考板SPa~SPd之狀態的圖。
FIG. 8 is a diagram showing a state in which the reference boards SPa to SPd are arranged on the
第9圖係表示第2實施型態的基板平台40之驅動精確度校正方法的流程圖。
FIG. 9 is a flowchart showing a driving accuracy calibration method of the
第10圖係表示第3實施型態的第2參考板SP2的圖。 FIG. 10 is a diagram showing the second reference plate SP2 of the third embodiment.
第11圖係表示第3實施型態的基板平台40之驅動精確度校正方法的流程圖。
FIG. 11 is a flowchart showing a driving accuracy calibration method of the
第12圖係表示將基板平台40整體區域AS分割為多個量測區域之例的圖。
FIG. 12 is a diagram showing an example of dividing the entire area AS of the
以下,參照圖式說明本發明的實施型態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
<曝光裝置10的綜述>
<Overview of
第1圖係本實施型態之曝光裝置10的區塊圖。
FIG. 1 is a block diagram of the
曝光裝置10為將形成於作為光罩之標線片(reticle)R的遮罩圖樣依據步進重複方式轉寫至基板(工作基板)W的投影曝光裝置,包括放電燈等之光源20、投影光學系統34。標線片R由石英材料構成,形成具有遮光區域的遮罩圖樣。基板W在此適用矽、陶瓷、玻璃或樹脂製的基板等。
The
自光源20放射的照明光,透過鏡22入射至積分器24,使照明光量變得均一。變得均一的照明光,透過鏡26入射至準直透鏡(collimator lens)28。藉此,平行光係入射至標線片R。光源20經由燈驅動部21驅動控制。
The illumination light emitted from the
搭載標線片R的標線片平台30、搭載基板W的基板平台40上,定義互相垂直的X-Y-Z之3軸座標系。標線片
平台30可在X-Y方向上移動以沿著焦點面移動標線片R,並由驅動部32驅動。另外,標線片平台30亦可在X-Y座標平面中旋轉。標線片平台30之位置座標在此係藉由雷射干涉儀(圖中未示)或線性編碼器(圖中未示)量測。
On the
透過標線片R之光,經由投影光學系統34作為圖樣光投影至基板W。基板W以其曝光面與投影光學系統34之像側焦點位置一致的方式搭載於基板平台40。
The light transmitted through the reticle R is projected onto the substrate W as pattern light through the projection
基板平台40(移動平台)可在X-Y方向上移動以沿著焦點面移動基板W,並由平台驅動部42(驅動部)驅動。另外,基板平台40可向垂直於焦點面(X-Y方向)之Z軸方向移動,並且,亦可在X-Y座標平面中旋轉。基板平台40之位置座標係藉由雷射干涉儀或線性編碼器組成的量測部43量測。
The substrate stage 40 (moving stage) is movable in the X-Y direction to move the substrate W along the focal plane, and is driven by the stage driving section 42 (driving section). In addition, the
控制部50控制平台驅動部32、42以定位標線片R、基板W並同時控制燈驅動部21。然後,基於步進重複方式執行曝光動作。此時隨著基板平台40的移動,量測部43量測其移動量,並輸出至控制部50。設於控制部50的記憶部51中,儲存標線片R的遮罩圖樣位置座標、形成於基板W之照射(shot)區域設計上的位置座標、步進移動量等。另外,於控制部50設有後述之算出校正資訊的校正單元(校正部)52。
The
攝影部36為拍攝形成於基板W之對位標記(alignment mark)的相機或光學感測器,在照射曝光前拍攝對位標記。另外,攝影部37為拍攝形成於標線片R之對位標記的相機或光學感測器,被安裝成通過圖中未示的移動機構而可在第1圖之X方向上移動。影像處理部38基於送自攝影部36或攝影
部37的影像訊號算出對位標記的位置座標。另外,攝影部36與攝影部37以及影像處理部38係合稱為標記位置檢測單元。
The
曝光裝置10,依據步進重複方式,將標線片R的遮罩圖樣依序轉寫至形成於基板W的各照射區域。意即,控制部50透過平台驅動部42,根據照射區域間隔間歇地移動基板平台40,當曝光對象之照射區域定位至遮罩圖樣的投影位置時,驅動光源20以將圖樣光投影至照射區域。
The
對位量測之時,量測部43算出基板平台40在XY平面內的位置(X,Y,θz)。
During the alignment measurement, the
接著,說明建立用於修正基板平台40之驅動精確度的校正資訊的方法。在該方法的說明前,先說明用於該方法的參考板。
Next, a method of creating calibration information for correcting the driving accuracy of the
第2圖係表示參考板SP之一例的圖。參考板SP為比基板平台40小的板狀部件。作為參考板SP的部件,使用玻璃、矽、陶瓷等。第2圖中雖表示矩形的例子,但也可以是圓形或多角形。
FIG. 2 is a diagram showing an example of the reference plate SP. The reference plate SP is a plate-like member smaller than the
參考板SP上,如第2圖所示,被授與m×n個參考標記Mij。這些參考標記具有X方向上並列m個參考標記之列與Y方向上並列n個參考標記之列互相垂直的2維矩陣狀位置關係。 As shown in FIG. 2, m×n reference marks Mij are assigned to the reference plate SP. These reference marks have a two-dimensional matrix-like positional relationship in which a row of m reference marks arranged in the X direction and a row of n reference marks arranged in the Y direction are perpendicular to each other.
參考標記Mij,在參考板Sp的表面上,形成為攝影部36攝影時有不同對比度(具有與參考板SP表面不同之光反射率)的圖樣。參考標記Mij為影像處理部38可識別為標記的圖樣形狀(例如圓形、矩形、十字形等)。另外,參考標記Mij的大小係基於攝影部36的攝影視野大小適當設定。
The reference mark Mij is formed on the surface of the reference plate Sp as a pattern having different contrasts (having a light reflectance different from that of the surface of the reference plate SP) when the photographing
參考標記陣列的間距Px、Py係根據基板平台40的設計規範或待曝光之基板等適當設定。例如,若是封裝基板的製
造,可用與晶片之陣列間距相同的間距設置參考標記Mij。此時,參考標記Mij的中心可設於接近晶片中心的位置上,或者,亦可設於對應至設於待曝光之封裝的對位標記的位置上。或者,亦可不論待曝光之基板而一律用例如10mm之間距設置參考標記。
The pitches Px and Py of the reference mark array are appropriately set according to the design specification of the
<第1實施型態> <first embodiment>
接著,用第3~6圖之概略圖以及第7圖之流程說明建立用於校正基板平台40之驅動精確度的校正資訊的第1實施型態。
Next, a first embodiment of creating calibration information for calibrating the drive accuracy of the
以下說明第1實施型態的構成。 The configuration of the first embodiment will be described below.
第3圖係表示基板平台40的量測區域的圖。在基板平台40的中央部分設置量測區域AS1,設置將基板平台40之整體區域AS一分為四並具有與量測區域AS1重複之區域的量測區域AS2~AS5。另外,雖然量測區域係表示量測標記位置之範圍的區域,但同時,亦表示為了量測標記位置驅動移動平台時的驅動區域。
FIG. 3 is a diagram showing the measurement area of the
以下說明根據第1實施型態之校正方法的步驟(參照第7圖)。 The steps of the calibration method according to the first embodiment will be described below (refer to FIG. 7 ).
步驟S101:首先,如第4圖所示,將參考板SP設置於基板平台40上中央部分的量測區域AS1。此時,在參考板SP的方向(旋轉)大致匹配以使參考標記陣列X方向之列和Y方向之列分別與X軸和Y軸平行的狀態下,設置於基板平台40上。此時,亦可藉由後述的手法求得參考板SP的2點參考標記的位置,以操控參考板SP的XYθ。另外,參考板SP可透過運送裝置(圖中未示)在基板平台40上移動,或者,可由作業者直接設置在基板平台40上。
Step S101 : First, as shown in FIG. 4 , set the reference plate SP on the measurement area AS1 of the central portion of the
步驟S102:接著,藉由平台驅動部42,移動基板
平台40至攝影部36拍攝預定之參考標記(例如參考標記M11)的位置。接著,攝影部36拍攝參考板SP,影像處理部38算出參考標記Mij的位置。控制部50將送自影像處理部38的參考標記Mij的位置資訊儲存於記憶部51。接著,控制部50參照量測部43量測的基板平台40的現在位置並同時控制平台驅動部42,沿著參考板SP之參考標記Mij之陣列以預定距離(參考標記陣列的設計間距Px或Py)移動基板平台40。與前次相同,攝影部36拍攝參考板SP,影像處理部38算出參考標記Mij的位置,並儲存於記憶部51。據此重複基板平台40的步進移動以量測參考板SP全部的參考標記的位置,並將位置資訊儲存至記憶部51。
Step S102 : Next, the substrate is moved by the
另外,量測區域AS1,由於是量測其他量測區域時參考的量測區域,有必要進行特別高精確度的量測。在此,亦可重複此步驟S102複數次(例如3次),取每個參考標記Mij量測值的平均,以將其作為參考標記陣列的位置資訊。 In addition, since the measurement area AS1 is a reference measurement area when measuring other measurement areas, it is necessary to perform a particularly high-precision measurement. Here, this step S102 can also be repeated several times (for example, 3 times), and the average of the measured values of each reference mark Mij is taken as the position information of the reference mark array.
步驟S103:接著,連接至控制部50的校正單元52求出預先儲存至記憶部51的參考標記陣列的設計座標資料與步驟S102中量測的參考標記Mij實際步進移動後的位置座標資料之間的差。此差即為參考標記Mij之位置上的步進移動誤差Dij(△Xij,△Yij)。接著,校正單元52算出相當於反轉此步進移動誤差Dij之符號而得之值的修正值Rij(-△Xij,-△Yij)。分別對各參考標記Mij算出此Rij,接著對應參考標記陣列排列修正值Rij以建立量測區域AS1的修正地圖CM1,並儲存於記憶體51。
Step S103: Next, the
第5圖係表示修正地圖CM1之一例的表格。此表格中例示修正地圖CM1內參考標記陣列M11~M35之範圍的
修正值(-△X,-△Y)。例如,參考標記M11中修正值R11(-△X,-△Y)根據表格為(0.24,-0.12)[μm]。另外,M11在基板平台40上的位置以平台座標(X,Y)表示,為(187.0,112.0)[mm]。
FIG. 5 is a table showing an example of the correction map CM1. This table exemplifies the correction of the range of the reference marker arrays M11 to M35 in the map CM1
Correction value (-△X,-△Y). For example, the correction value R11 (-ΔX, -ΔY) in the reference mark M11 is (0.24, -0.12) [μm] according to the table. In addition, the position of M11 on the
步驟S104:接著,如第6圖所示,將參考板SP設置於基板平台40上的量測區域AS2。
Step S104 : Next, as shown in FIG. 6 , set the reference plate SP on the measurement area AS2 on the
步驟S105:接著,平台驅動部42將基板平台40移動至攝影部36拍攝預定參考標記(例如參考標記M11)的位置。接著,根據預先儲存於記憶部51的參考標記陣列的設計座標,控制部50透過平台驅動部42驅動基板平台40,攝影部36拍攝存在於量測區域AS1與量測區域AS2之重複區域AS2a上的至少2點(十字標記等姿態角明顯之標記的情況下為至少1點)參考標記,影像處理部38量測其位置。此時,若量測X方向或Y方向上成對的複數個參考標記的位置則可提高量測精確度因而適佳。例如第5圖中,M11與M41、M12與M42之2組相當於X方向上成對的參考標記。另外,M11與M12、M21與M22、M31與M32、M41與M42之4組相當於Y方向上成對的參考標記。
Step S105: Next, the
在步驟S105的量測時,基於修正地圖CM1進行已知的內插處理(例如線性內插)以算出對應基板平台40現在位置的修正值,用此修正值校正基板平台40的驅動精確度。在此,驅動精確度的校正,意指在控制部50中修正量測部43的量測結果(即量測值的修正),或是在控制部50對平台驅動部42指示基板平台40之移動時修正目標值(即驅動量的修正)。雖然可使用任一修正方法,但在此以進行驅動量的修正為前提說明。
During the measurement in step S105 , a known interpolation process (eg, linear interpolation) is performed based on the correction map CM1 to calculate a correction value corresponding to the current position of the
步驟S106:接著,控制部50算出連結複數個參考
標記之線段的角度。接著,從此X方向及Y方向之線段,算出參考板SP相對於基板平台40之X軸及Y軸的設置角度以及設置位置。接著,控制部50,基於儲存於記憶部52的參考標記陣列的設計座標資料與參考板的設置角度及位置,進行下個步驟S107中使用的基板平台40的移動目標座標資料(即參考標記陣列的設計座標資料)的修正。
Step S106: Next, the
步驟S107:接著,如步驟S102之說明,量測參考板SP全部的參考標記的位置,並將位置資訊儲存至記憶部51。
Step S107 : Next, as described in Step S102 , measure the positions of all the reference marks on the reference plate SP, and store the position information in the
步驟S108:接著,如步驟S103之說明,連接至控制部50的校正單元52建立量測區域AS2的修正地圖CM2,並儲存至記憶部51。
Step S108 : Next, as described in Step S103 , the
步驟S109、S110:對量測區域AS3~AS5亦進行相同的處理。換句話說,判斷是否完成全部量測區域的修正地圖建立(步驟S109),若未完成,依序對剩下的量測區域進行與步驟S105~步驟S108相同的參考板SP的量測,建立修正地圖CM3~CM5,並儲存至記憶部51(步驟S110)。 Steps S109, S110: The same processing is also performed on the measurement areas AS3-AS5. In other words, it is determined whether the creation of the correction map of all the measurement areas is completed (step S109 ). If not completed, the measurement of the reference board SP that is the same as in steps S105 to S108 is sequentially performed on the remaining measurement areas to create The corrected maps CM3 to CM5 are stored in the memory unit 51 (step S110).
步驟S111:控制部50,基於修正地圖CM1~CM5,建立基板平台40整體區域AS的修正地圖。對於量測區域的重複部分係使用修正地圖CM1。此時,對於修正地圖的邊界部分,進行相鄰2個修正地圖的非線性修正。
Step S111 : The
如上所述,基板平台40的修正地圖係儲存於記憶部51內。然後,例如,晶圓曝光時等等,則使用此修正地圖校正基板平台40的驅動精確度。
As described above, the correction map of the
另外,上述實施型態中,雖基於修正地圖CM1~
CM5之5個修正地圖建立基板平台40整體區域AS的修正地圖,但也可以根據修正地圖CM2~CM5之4個修正地圖建立基板平台40整體區域AS的修正地圖
In addition, in the above-mentioned embodiment, although it is based on the correction map CM1~
The 5 revision maps of CM5 create the revision map of the entire area AS of the
<第2實施型態> <Second embodiment>
第1實施型態中,藉由改變在基板平台40上的1個參考板SP的載置位置依序量測量測區域AS1~AS5的平台移動誤差。第2實施型態中,藉由使用第8圖所示的複數個參考板SPa(參考板Spa可使用參考板SP)、SPb、SPc、SPd連續實施量測區域AS2~AS5的平台移動誤差的量測。
In the first embodiment, the stage movement errors of the measurement areas AS1 to AS5 are sequentially measured by changing the placement position of one reference board SP on the
此情況下,參考板SPa~SPd在參考標記的陣列上被視為與參考板SP有相同特性者為佳。另外,希望在同一材質、同一板厚下有良好的平面度,以使得載置於基板平台40上時所拍攝的參考標記陣列上不會出現個體差異。
In this case, the reference plates SPa to SPd are preferably regarded as having the same characteristics as the reference plate SP on the array of reference marks. In addition, it is desirable to have good flatness under the same material and the same plate thickness, so that there is no individual difference in the reference mark array photographed when placed on the
根據第2實施型態建立用於校正基板平台40之驅動精確度的校正資訊的方法係根據第9圖說明。步驟S201~S203與第1實施型態的步驟S101~S103同程序。接著,分別在量測區域AS2~AS5載置參考板Spa~SPd(步驟S204)。
The method of creating the calibration information for calibrating the driving accuracy of the
接著,與第1實施型態之步驟S105~步驟S110一樣地建立各量測區域的修正地圖,並與步驟S111一樣生成基板平台40整體區域AS的修正地圖(步驟S205~步驟S209)。
Next, as in step S105 to step S110 of the first embodiment, a correction map for each measurement area is created, and a correction map for the entire area AS of the
根據第2實施型態,至基板平台40的參考板載置係以一階段進行,可連續量測標記位置,因此提高作業性。另外,可縮短校正所需的時間。
According to the second embodiment, the reference plate placement to the
<第3實施型態> <The third embodiment>
雖然第2實施型態中,量測區域AS2~AS5的平台移動誤差的量測是藉由使用複數個參考板Spa~SPd連續實施,但在第3實施型態中,將此複數個參考板固定至1個基材上,當作1個參考板。 Although in the second embodiment, the measurement of the platform movement error in the measurement areas AS2 to AS5 is performed continuously by using a plurality of reference plates Spa to SPd, in the third embodiment, the plurality of reference plates Fixed to 1 substrate and used as 1 reference plate.
第10圖係第2參考板SP2的一例。第2參考板SP2由與基板平台40之基板載置面相同程度大小的基材PB和貼附固定至此基材PB的4個參考板部件PSP1~PSP4構成。
Fig. 10 shows an example of the second reference board SP2. The second reference board SP2 is composed of a base material PB having the same size as the board placement surface of the
第2參考板SP2的基材PB最好使用熱膨脹係數與參考板部件PSP1~PSP4接近的材料,例如使用陶瓷。 For the base material PB of the second reference board SP2, it is preferable to use a material having a thermal expansion coefficient close to that of the reference board members PSP1 to PSP4, such as ceramics.
第2參考板SP2的參考板部件PSP1~PSP4,分別以與參考板SP相同的間距,2維矩陣狀地形成相同形狀的參考標記M2ij。第2參考板SP2的參考板部件PSP1~PSP4,用與參考板SP相同材料、相同製法製造為佳。 The reference plate members PSP1 to PSP4 of the second reference plate SP2 are respectively formed with reference marks M2ij of the same shape in a two-dimensional matrix at the same pitch as the reference plate SP. The reference board parts PSP1 to PSP4 of the second reference board SP2 are preferably made of the same material and the same manufacturing method as the reference board SP.
像第10圖所示的參考板部件PSP1~PSP4,因黏著等程序,而有分別產生不同附著誤差的可能性。因此,第2參考板SP2不可被視為1個連續參考板使用。在此,與第2實施型態相同,對於參考板部件PSP1~PSP4,分別求出至基板平台40的載置誤差,根據各載置誤差量測參考板部件PSP1~PSP4每一者的平台移動誤差,藉此建立基板平台40的修正地圖。
The reference board parts PSP1 to PSP4 shown in Fig. 10 may have different adhesion errors due to procedures such as adhesion. Therefore, the second reference board SP2 cannot be used as a continuous reference board. Here, as in the second embodiment, for the reference board members PSP1 to PSP4, the placement errors on the
根據第3實施型態建立用於校正基板平台40之驅動精確度的校正資訊的方法係根據第11圖說明。步驟S301~S303與第2實施型態的步驟S201~S203同程序。接著,在整體區域AS分別載置第2參考板SP2(步驟S304)。接著,與第2實施型態的步驟S205~S211一樣地建立各量測區域的修正地圖,並生成基板平台40整體區域AS的修正地圖(步驟S305~步驟S309)。
The method of creating the calibration information for calibrating the driving accuracy of the
根據第3實施型態,由於可一次進行至基板平台40的參考板載置,更提高作業性。另外,可縮短校正所需的時間。
According to the third embodiment, since it is possible to carry out the reference board placement on the
如以上所述,根據本發明,使用比平台驅動區域小的參考板,可建立用於修正移動平台之驅動精確度的校正資訊。 As described above, according to the present invention, using a reference plate smaller than the driving area of the platform, correction information for correcting the driving accuracy of the mobile platform can be established.
另外,雖然以移動平台為基板平台40的情況為例進行說明,但即使是標線片平台30亦可同樣地校正驅動精確度。此情況下,使用攝影部37檢測載置於標線片平台30上的參考板的標記。
In addition, although the case where the moving stage is the
另外,雖然以四分割後之基板平台40之區域為第2量測區域的情況為例進行說明,但分割的數目與配置並沒有限制。例如像第12圖,基板平台40可設有中央部分的第1量測區域AS1、與第1量測區域部分重複的第2量測區域AS2~AS5、與第2量測區域AS2~AS5任一者部分重複的第3量測區域AS6~AS13。此情況下,校正部52基於對應量測區域AS1~AS13的修正地圖CM1~CM13,建立修正驅動部之驅動精確度的校正資訊。
In addition, although the case where the area of the
另外,作為曝光裝置的用途並不限定於半導體封裝製造用的曝光裝置,亦可廣泛適用液晶顯示面板用的曝光裝置、印刷基板用的曝光裝置等。 In addition, the application as an exposure apparatus is not limited to the exposure apparatus for semiconductor package manufacture, The exposure apparatus for liquid crystal display panels, the exposure apparatus for printed circuit boards, etc. are also widely applicable.
另外,曝光裝置10並不限定於實施型態的投影曝光裝置,例如,即使是無標線片的無遮罩曝光裝置亦可實施本發明。另外,本發明亦可用作曝光裝置以外之裝置的平台校正系統。
In addition, the
10‧‧‧曝光裝置 10‧‧‧Exposure device
20‧‧‧光源 20‧‧‧Light source
21‧‧‧燈驅動部 21‧‧‧Light Driver
22、26‧‧‧鏡 22, 26‧‧‧Mirror
24‧‧‧積分器 24‧‧‧Integrator
28‧‧‧準直透鏡 28‧‧‧Collimating Lens
30‧‧‧標線片平台 30‧‧‧Reticle Platform
32、42‧‧‧平台驅動部 32, 42‧‧‧Platform Drive Department
34‧‧‧投影光學系統 34‧‧‧Projection Optical System
36、37‧‧‧攝影部 36, 37‧‧‧Photography Department
38‧‧‧影像處理部 38‧‧‧Image Processing Department
40‧‧‧基板平台 40‧‧‧Substrate platform
43‧‧‧量測部 43‧‧‧Measurement Department
50‧‧‧控制部 50‧‧‧Control Department
51‧‧‧記憶部 51‧‧‧Memory Department
52‧‧‧校正部 52‧‧‧Correction Department
R‧‧‧標線片 R‧‧‧Reticles
W‧‧‧基板 W‧‧‧Substrate
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US20110053062A1 (en) * | 2009-08-25 | 2011-03-03 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
JP3177293U (en) * | 2012-05-16 | 2012-07-26 | 株式会社エイチアンドエフ | Camera calibration board |
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KR100525521B1 (en) * | 1996-10-21 | 2006-01-27 | 가부시키가이샤 니콘 | Exposure apparatus and exposure method |
JP2002280288A (en) * | 2001-03-19 | 2002-09-27 | Nikon Corp | Reference wafer for calibration, method of calibration, method and device for detecting position, and aligner |
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WO2017056473A1 (en) * | 2015-09-29 | 2017-04-06 | 日本電気株式会社 | Camera calibration board, camera calibration device, camera calibration method, and program-recording medium for camera calibration |
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US20110053062A1 (en) * | 2009-08-25 | 2011-03-03 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
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