TWI757859B - Method of forming package structure - Google Patents

Abstract

A method of forming package structure includes an etching step, a laser step, a plating step and a singulation step. In the etching step, a plurality of cutting streets of a leadframe is etched. In the laser step, a plastic package material covered on the cutting streets is removed via a laser beam. In the plating step, a plurality of plating surfaces are disposed on a plurality of areas uncovered on the leadframe via the plastic package material. In the singulation step, the cutting streets of the leadframe are cut to form a package structure. Therefore, it is favorable for forming the package structure with better solderability, and the package structure can be stably disposed on a circuit board.

Description

Forming method of package structure

The present disclosure relates to a method of forming a package structure.

In the past, the Quad Flat No Leads (QFN) package has less solderable area on the side of the pins, so it has a poor soldering effect when the Quad Flat No Leads package is installed on the circuit board. .

Nowadays, a structure in which the leads of the quad flat leadless package are retracted to a part of the bottom portion has been developed, thereby increasing the solderable area on the side of the lead. Generally, the above structures are achieved by knife cutting, etching or laser processes. However, such a structure will reduce the area of the bottom of the lead on the circuit board, which will lead to the problem of shortening the life of the lead on the circuit board.

The present disclosure provides a method for forming a package structure. The plastic packaging material of the scribe line is removed by etching a scribe line and a laser beam to obtain a package structure that can improve the side solderability and maintain the life of the circuit board.

According to an embodiment of the present disclosure, a method for forming a package structure is provided, which includes an etching step, a laser step, a plating step, and a dicing step. In the etching step, a plurality of scribe lines of a lead frame are etched. In the laser step, a laser beam is used to remove a plastic packaging material covering the scribe line. In the electroplating step, a plurality of electroplating surfaces are arranged on a plurality of areas on the lead frame that are not covered by the plastic packaging material. In the cutting step, the cutting lines of the lead frame are cut to form a package structure.

The method for forming the package structure according to the embodiment described in the preceding paragraph may further include a molding step, wherein the plastic packaging material covers the lead frame before the laser step.

According to the method for forming the package structure in the embodiment described in the preceding paragraph, an etching depth in the etching step may be less than or equal to half of a thickness of the lead frame.

According to the method for forming the package structure in the embodiment described in the preceding paragraph, in the laser step, the laser beam can remove a part of an upper surface of the scribe line of the lead frame.

According to the method for forming the package structure according to the embodiment described in the preceding paragraph, in the cutting step, the cutting track of the lead frame can be cut by a knife.

According to the method for forming the package structure according to the embodiment described in the preceding paragraph, the cutting width of the cutter can be smaller than or equal to the etching width of the etching step.

According to the method for forming the package structure in the embodiment described in the preceding paragraph, the laser beam of the laser step may be diode-pumped neodymium-doped yttrium vanadate, the output power may be 10 watts to 40 watts, and the wavelength may be 355 watts. Nanometer, 532nm or 1064nm, the pulse form can be continuous wave, and the pulse frequency can be 60 kHz to 200 kHz.

According to the method for forming the package structure in the embodiment described in the preceding paragraph, the laser step may include a first laser step and a second laser step, and the second laser step is performed after the first laser step.

According to the method for forming the package structure in the embodiment described in the preceding paragraph, the first laser step can be a laser beam to remove the plastic packaging material covering the upper surface of the scribe line.

According to the method for forming the package structure in the embodiment described in the preceding paragraph, the second laser step can remove the plastic packaging material covering the lower surface of the scribe line by the laser beam.

Please refer to FIG. 1. FIG. 1 is a schematic flowchart of a method S100 for forming a package structure according to the first embodiment of the present invention. As can be seen from FIG. 1, the method S100 for forming the package structure includes an etching step S101, a molding step S102, a laser step, a plating step S105 and a cutting step S106, wherein the laser step may include a first laser step S103 and a second laser step S104, and the second laser step S104 is performed after the first laser step S103.

Please refer to FIG. 2 and FIG. 3. FIG. 2 shows a schematic diagram of the etching step S101 in the first embodiment in FIG. 1, and FIG. 3 shows the lead frame 110 in the first embodiment in FIG. 2 along the section line 3- Schematic cross-section of 3'. As can be seen from FIG. 2 and FIG. 3 , in the etching step S101 , the plurality of scribe lines 111 of the lead frame 110 are etched. In the first embodiment, an etching groove 112 is formed by etching the lower surface of the scribe line 111 of the lead frame 110 , and the etching depth can be equal to half of the thickness of the lead frame 110 , but not limited thereto.

Please refer to FIGS. 4 and 5. FIG. 4 shows a schematic diagram of the molding step S102 in the first embodiment in FIG. 1, and FIG. 5 shows the lead frame 110 in the first embodiment in FIG. 4 along the section line 5- 5' cross-sectional schematic diagram. It can be seen from FIG. 4 and FIG. 5 that the plastic packaging material 120 covers the lead frame 110 before the laser step.

Please refer to FIG. 6 and FIG. 7, FIG. 6 is a schematic diagram of the first laser step S103 in the first embodiment in FIG. 1, and FIG. 7 is a cross-section of the lead frame 110 in the first embodiment in FIG. 6 Schematic cross-section of line 7-7'. As can be seen from FIG. 6 and FIG. 7 , in the laser step, a laser beam L is used to remove the plastic packaging material 120 covering the scribe line 111 . Specifically, in the first embodiment, in the first laser step S103 , the laser beam L removes the plastic packaging material 120 covering an upper surface of the scribe line 111 , and the plastic packaging material 120 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 111 to remove the plastic packaging material 120 , the plastic packaging material 120 disposed in the etching groove 112 will not be irradiated by the laser beam L, so setting The plastic packaging material 120 in the etching groove 112 remains therein.

Please refer to FIGS. 8 and 9. FIG. 8 is a schematic diagram of the second laser step S104 in the first embodiment in FIG. 1, and FIG. 9 is a cross-section of the lead frame 110 in the first embodiment in FIG. 8. Schematic cross-section of line 9-9'. It can be seen from FIG. 8 and FIG. 9 that the second laser step S104 is that the laser beam L removes the plastic packaging material 120 covering the lower surface of the scribe line 111 , and the plastic packaging material 120 is only partially removed.

Please refer to Table 1. Table 1 shows the parameters of the laser beam L used in the first laser step S103 and the second laser step S104 in the first embodiment, but the parameters in Table 1 are not limited. Table I type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, through the first laser step S103 and the second laser step S104, the object to be removed (eg, part of the plastic packaging material 120) and its depth can be selected. Thereby, the range of removal can be effectively controlled. Specifically, both the first laser step S103 and the second laser step S104 may be composed of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (such as 355 nm) to achieve a rapid removal effect, and then the laser beam L with a larger wavelength (such as 532 nm or 1064 nm) can be used for rough processing. The laser beam L of the nanometer) is finely processed to achieve a relatively fine removal effect, but it is not limited thereto.

Please refer to FIG. 10 and FIG. 11. FIG. 10 shows a schematic diagram of the electroplating step S105 in the first embodiment in FIG. 1, and FIG. 11 shows the lead frame 110 in FIG. 10 along the section line 11- in the first embodiment. Schematic cross-section of 11'. It can be seen from FIG. 10 and FIG. 11 that the plurality of plated surfaces 130 are disposed on the plurality of regions on the lead frame 110 that are not covered by the plastic packaging material 120 .

Please refer to FIG. 12 , FIG. 13 and FIG. 14 . FIG. 12 is a schematic diagram of the cutting step S106 in the first embodiment in FIG. 1 , and FIG. 13 is a schematic diagram of the package structure 100 in the first embodiment in FIG. 12 . A schematic cross-sectional view of the section line 13-13', and FIG. 14 is a schematic cross-sectional view of the package structure 100 of the first embodiment shown in FIG. 12 along the section line 14-14'. As can be seen from FIGS. 12 to 14 , the cutting step S106 is to cut the cutting lines 111 of the lead frame 110 to form the package structure 100 . Specifically, the cutting track 111 of the lead frame 110 is cut by a cutter, and the cutting width of the cutter is smaller than the etching width of the etching step S101 (ie, the width of the etching groove 112 ), so the ladder-shaped pins 113 are formed, and the electroplating surface 130 is provided on the periphery of the ladder pin 113 . Furthermore, since the thickness of the scribe line 111 has been reduced in the etching step S101 , the generation of burr can be reduced during the dicing step S106 .

Please refer to FIGS. 15 and 16. FIG. 15 is a schematic side view of the package structure 100 in the first embodiment in FIG. 1, and FIG. 16 is a partial schematic view of the package structure 100 in the first embodiment in FIG. 1. As can be seen from FIG. 15 and FIG. 16 , the package structure 100 includes a plurality of ladder-shaped pins 113 . The ladder-shaped pins 113 protrude from the edge of the plastic packaging material 120 , and each ladder-shaped pin 113 includes five electroplating surfaces 130 and is close to the package. The ladder-shaped pins 113 on the lower surface of the structure 100 do not extend beyond and are aligned with the edge of the plastic packaging material 120 .

Therefore, the method S100 for forming the package structure of the first embodiment can not only increase the side solderable area of the package structure 100, but also eliminate the need to change the style of the package outline drawing (POD), thereby reducing the need to redraw the outside of the package. Type diagram program. Therefore, the connection strength between the ladder pins 113 and the circuit board can be improved, so as to maintain and increase the life of the ladder pins 113 disposed on the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 17. FIG. 17 is a schematic flowchart of a method S200 for forming a package structure according to the second embodiment of the present invention. As can be seen from FIG. 17 , the method S200 for forming the package structure includes an etching step S201 , a molding step S202 , a laser step S203 , a plating step S204 and a cutting step S205 .

Please refer to FIG. 18 and FIG. 19. FIG. 18 shows a schematic diagram of the etching step S201 in the second embodiment in FIG. 17, and FIG. 19 shows the lead frame 210 in FIG. 18 along the section line 19- in the second embodiment. Schematic cross-section of 19'. As can be seen from FIG. 18 and FIG. 19 , in the etching step S201 , the plurality of scribe lines 211 of the lead frame 210 are etched. In the second embodiment, an etching groove 212 is formed by etching the lower surface of the scribe line 211 of the lead frame 210 , and the etching depth can be equal to half of the thickness of the lead frame 210 , but not limited thereto.

Please refer to FIG. 20 and FIG. 21. FIG. 20 shows a schematic diagram of the molding step S202 in the second embodiment in FIG. 17, and FIG. 21 shows the lead frame 210 in FIG. 20 along the section line 21- in the second embodiment. Schematic cross-section of 21'. It can be seen from FIG. 20 and FIG. 21 that the plastic packaging material 220 covers the lead frame 210 before the laser step S203.

Please refer to FIGS. 22 and 23. FIG. 22 shows a schematic diagram of the laser step S203 in the second embodiment in FIG. 17, and FIG. 23 shows the lead frame 210 in FIG. 22 along the section line 23 in the second embodiment. -23' cross-sectional schematic diagram. It can be seen from FIG. 22 and FIG. 23 that the laser step S203 uses a laser beam L to remove the plastic packaging material 220 covering the scribe line 211 . Specifically, in the laser step S203 , the laser beam L removes the plastic packaging material 220 covering an upper surface of the scribe line 211 , and the laser beam L removes a part of the upper surface of the scribe line 211 of the lead frame 210 , wherein The plastic encapsulation material 220 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 211 to remove the plastic packaging material 220 and a part of the upper surface of the scribe line 211, the plastic packaging material 220 disposed in the etching groove 212 will not be damaged. When the laser beam L is irradiated, the plastic packaging material 220 disposed in the etching groove 212 remains therein.

Please refer to Table 2 below. Table 2 shows the parameters of the laser beam L used in the laser step S203 in the second embodiment, but the parameters in Table 2 are not limited. Table II type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the objects to be removed (such as part of the plastic packaging material 220 and part of the lead frame 210 ) and their depths can be selected through the laser step S203 , and the laser step S203 is not limited to one, but can also be more than two, depending on The energy and parameters of the laser beam L. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S203 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (such as 355 nm) to achieve a rapid removal effect, and then the laser beam L with a larger wavelength (such as 532 nm or 1064 nm) can be used for rough processing. The laser beam L of the nanometer) is finely processed to achieve a relatively fine removal effect, but it is not limited thereto.

Please refer to FIGS. 24 and 25. FIG. 24 shows a schematic diagram of the electroplating step S204 in the second embodiment in FIG. 17, and FIG. 25 shows the lead frame 210 in FIG. 24 along the section line 25- in the second embodiment. Schematic cross-section of 25'. As can be seen from FIG. 24 and FIG. 25 , the plurality of plated surfaces 230 are disposed on the plurality of areas on the lead frame 210 that are not covered by the plastic packaging material 220 .

Please refer to FIG. 26 , FIG. 27 and FIG. 28 . FIG. 26 is a schematic diagram of the cutting step S205 in the second embodiment in FIG. 17 , and FIG. 27 is a schematic diagram of the package structure 200 in FIG. 26 in the second embodiment. A schematic cross-sectional view of the section line 27-27', and FIG. 28 is a schematic cross-sectional view of the package structure 200 of the second embodiment in FIG. 26 along the section line 28-28'. As can be seen from FIGS. 26 to 28 , the cutting step S205 is to cut the cutting lines 211 of the lead frame 210 to form the package structure 200 . In detail, the cutting track 211 of the lead frame 210 is cut by a cutter, and the cutting width of the cutter is equal to the etching width of the etching step S201 (ie, the width of the etching groove 212 ), so the ladder-shaped pins 213 are formed, and the electroplating surface 230 is provided on the periphery of the ladder pins 213 . Furthermore, since the thickness of the scribe line 211 has been reduced in the etching step S201, the generation of burrs can be reduced during the dicing step S205.

Please refer to FIGS. 29 and 30. FIG. 29 is a schematic side view of the package structure 200 in the second embodiment in FIG. 17, and FIG. 30 is a partial schematic view of the package structure 200 in the second embodiment in FIG. 17. As can be seen from FIG. 29 and FIG. 30, the package structure 200 includes a plurality of ladder-shaped pins 213, the ladder-shaped pins 213 protrude from the edge of the plastic packaging material 220, and each ladder-shaped pin 213 includes five electroplating surfaces 230, and is close to the package. The ladder-shaped pins 213 on the lower surface of the structure 200 protrude from the edge of the plastic packaging material 220 .

Therefore, through the method S200 for forming the package structure of the second embodiment, it is beneficial to improve the side solderable area of the package structure 200 . Therefore, the connection strength between the ladder pins 213 and the circuit board can be improved, so as to maintain and increase the service life of the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 31 . FIG. 31 is a schematic flowchart of a method S300 for forming a package structure according to the third embodiment of the present invention. As can be seen from FIG. 31 , the method S300 for forming the package structure includes an etching step S301 , a molding step S302 , a laser step S303 , a plating step S304 and a cutting step S305 .

Please refer to FIGS. 32 and 33. FIG. 32 shows a schematic diagram of the etching step S301 in the third embodiment in FIG. 31, and FIG. 33 shows the lead frame 310 in FIG. 32 along the line 33- in the third embodiment. Schematic cross-section of 33'. As can be seen from FIG. 32 and FIG. 33 , in the etching step S301 , the plurality of scribe lines 311 of the lead frame 310 are etched. In the third embodiment, an etching groove 312 is formed by etching the lower surface of the scribe line 311 of the lead frame 310 , and the etching depth may be less than half of the thickness of the lead frame 310 , but not limited thereto. Further, the scribe line 311 may have a plurality of recesses 314 , the recess depth of the recesses 314 may be half of the thickness of the lead frame 310 , the width of each recess 314 may be greater than the width of each etching groove 312 , and each recess 314 Located in the center of the cutting lane 311 .

Please refer to FIGS. 34 and 35. FIG. 34 shows a schematic diagram of the molding step S302 in the third embodiment in FIG. 31, and FIG. 35 shows the lead frame 310 in the third embodiment in FIG. 34 along the section line 35- Schematic cross-section of 35'. As can be seen from FIG. 34 and FIG. 35 , the plastic packaging material 320 covers the lead frame 310 before the laser step S303 . It is worth mentioning that the plastic packaging material 320 is not filled into the recessed portion 314 .

Please refer to FIGS. 36 and 37. FIG. 36 shows a schematic diagram of the laser step S303 in the third embodiment in FIG. 31, and FIG. 37 shows the lead frame 310 in FIG. 36 along the section line 37 in the third embodiment. Schematic cross-section of -37'. As can be seen from FIG. 36 and FIG. 37 , in the laser step S303 , a laser beam L is used to remove the plastic packaging material 320 covering the scribe line 311 . Specifically, in the laser step S303 , the laser beam L removes the plastic packaging material 320 covering an upper surface of the scribe line 311 , and the laser beam L removes a part of the upper surface of the scribe line 311 of the lead frame 310 , wherein The plastic encapsulation material 320 is only partially removed.

Please refer to Table 3 below. Table 3 shows the parameters of the laser beam L used in the laser step S303 in the third embodiment, but the parameters in Table 3 are not limited. Table 3 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the objects to be removed (such as part of the plastic packaging material 320 and part of the lead frame 310 ) and their depths can be selected through the laser step S303 , and the laser step S303 is not limited to one, but can also be more than two, depending on The energy and parameters of the laser beam L. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S303 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (such as 355 nm) to achieve a rapid removal effect, and then the laser beam L with a larger wavelength (such as 532 nm or 1064 nm) can be used for rough processing. The laser beam L of the nanometer) is finely processed to achieve a relatively fine removal effect, but it is not limited thereto.

Please refer to FIGS. 38 and 39. FIG. 38 shows a schematic diagram of the electroplating step S304 in the third embodiment in FIG. 31, and FIG. 39 shows the lead frame 310 in the third embodiment in FIG. 38 along the section line 39- Schematic cross-section of 39'. As can be seen from FIG. 38 and FIG. 39 , the plurality of plated surfaces 330 are disposed on the plurality of areas on the lead frame 310 that are not covered by the plastic packaging material 320 .

Please refer to FIG. 40 , FIG. 41 and FIG. 42 , FIG. 40 is a schematic diagram of the cutting step S305 in the third embodiment in FIG. 31 , and FIG. 41 is a schematic diagram of the package structure 300 in the third embodiment in FIG. 40 A schematic cross-sectional view of the section line 41-41', and FIG. 42 is a schematic cross-sectional view of the package structure 300 in the third embodiment in FIG. 40 along the section line 42-42'. As can be seen from FIGS. 40 to 42 , the cutting step S305 is to cut the cutting lines 311 of the lead frame 310 to form the package structure 300 . In detail, the cutting path 311 of the lead frame 310 is cut by a cutter, and the cutting width of the cutter is equal to the etching width of the etching step S301 (ie, the width of the etching groove 312 ), so the ladder-shaped pins 313 are formed, and the electroplating surface 330 is provided on the outer periphery of the ladder pins 313 . Furthermore, since the thickness of the scribe line 311 has been reduced in the etching step S301, the generation of burrs can be reduced during the dicing step S305.

Please refer to FIGS. 43 and 44 . FIG. 43 is a schematic side view of the package structure 300 in the third embodiment in FIG. 31 , and FIG. 44 is a partial schematic view of the package structure 300 in the third embodiment in FIG. 31 . As can be seen from FIG. 43 and FIG. 44 , the package structure 300 includes a plurality of ladder-shaped pins 313 , the ladder-shaped pins 313 protrude from the edge of the plastic packaging material 320 , and each ladder-shaped pin 313 includes eight plating surfaces 330 and is close to the package. The ladder-shaped pins 313 on the lower surface of the structure 300 protrude from the edge of the plastic packaging material 320 .

Therefore, through the method S300 for forming the package structure of the third embodiment, it is beneficial to increase the side solderable area of the package structure 300 . Therefore, the connection strength between the ladder pins 313 and the circuit board can be improved, so as to maintain and increase the life of the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 45. FIG. 45 is a schematic flowchart of a method S400 for forming a package structure according to the fourth embodiment of the present invention. As can be seen from FIG. 45 , the method S400 for forming the package structure includes an etching step S401 , a molding step S402 , a laser step S403 , a plating step S404 and a cutting step S405 .

Please refer to FIGS. 46 and 47. FIG. 46 shows a schematic diagram of the etching step S401 in the fourth embodiment in FIG. 45, and FIG. 47 shows the lead frame 410 in FIG. 46 along the section line 47- in the fourth embodiment. Schematic cross-section of 47'. As can be seen from FIG. 46 and FIG. 47 , in the etching step S401 , the plurality of scribe lines 411 of the lead frame 410 are etched. In the fourth embodiment, an etching groove 412 is formed by etching the upper surface of the scribe line 411 of the lead frame 410 , and the etching depth can be equal to half of the thickness of the lead frame 410 , but is not limited thereto.

Please refer to FIGS. 48 and 49. FIG. 48 shows a schematic diagram of the molding step S402 in the fourth embodiment in FIG. 45, and FIG. 49 shows the lead frame 410 in the fourth embodiment in FIG. 48 along the section line 49- Schematic cross-section of 49'. As can be seen from FIG. 48 and FIG. 49 , the plastic packaging material 420 covers the lead frame 410 before the laser step S403 .

Please refer to FIGS. 50 and 51. FIG. 50 shows a schematic diagram of the laser step S403 in the fourth embodiment in FIG. 45, and FIG. 51 shows the lead frame 410 in FIG. 50 along the section line 51 in the fourth embodiment. Schematic cross-section of -51'. As can be seen from FIG. 50 and FIG. 51 , the laser step S403 uses a laser beam L to remove the plastic packaging material 420 covering the scribe line 411 . Specifically, in the laser step S403, the laser beam L removes the plastic packaging material 420 covering an upper surface of the scribe line 411, and the plastic packaging material 420 is only partially removed.

Please refer to Table 4 below. Table 4 shows the parameters of the laser beam L used in the laser step S403 in the fourth embodiment, but the parameters in Table 4 are not limited. Table 4 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the object to be removed (eg, part of the plastic packaging material 420 ) and its depth can be selected through the laser step S403 . Thereby, the range of removal can be effectively controlled. Specifically, the laser step S403 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIGS. 52 and 53. FIG. 52 shows a schematic diagram of the electroplating step S404 in the fourth embodiment in FIG. 45, and FIG. 53 shows the lead frame 410 in FIG. 52 along the line 53- in the fourth embodiment. Schematic cross-section of 53'. As can be seen from FIG. 52 and FIG. 53 , the plurality of plated surfaces 430 are disposed on the plurality of regions on the lead frame 410 that are not covered by the plastic packaging material 420 .

Please refer to FIG. 54 , FIG. 55 and FIG. 56 , FIG. 54 is a schematic diagram of the cutting step S405 in the fourth embodiment in FIG. 45 , and FIG. 55 is a schematic diagram of the package structure 400 in the fourth embodiment in FIG. 54 A schematic cross-sectional view of the line 55-55' is shown. FIG. 56 is a schematic cross-sectional view of the package structure 400 of the fourth embodiment shown in FIG. 54 along the line 56-56'. As can be seen from FIGS. 54 to 56 , the cutting step S405 is to cut the cutting lines 411 of the lead frame 410 to form the package structure 400 . Specifically, the cutting track 411 of the lead frame 410 is cut by a cutter, and the cutting width of the cutter is equal to the etching width of the etching step S401 (ie, the width of the etching groove 412 ), so the ladder-shaped pins 413 are formed, and the electroplating surface 430 is provided on the outer periphery of the ladder pins 413 . Furthermore, since the thickness of the scribe line 411 has been reduced in the etching step S401, the generation of burrs can be reduced during the dicing step S405.

Please refer to FIGS. 57 and 58. FIG. 57 is a schematic side view of the package structure 400 in the fourth embodiment in FIG. 45, and FIG. 58 is a partial schematic view of the package structure 400 in the fourth embodiment in FIG. 45. It can be seen from FIG. 57 and FIG. 58 that the package structure 400 includes a plurality of ladder-shaped pins 413 , the ladder-shaped pins 413 protrude from the edge of the plastic packaging material 420 , and each ladder-shaped pin 413 includes six electroplating surfaces 430 and is close to the package. The ladder-shaped pins 413 on the lower surface of the structure 400 protrude from the edge of the plastic packaging material 420 .

Therefore, through the method S400 for forming the package structure of the fourth embodiment, it is beneficial to increase the side solderable area of the package structure 400 . Therefore, the connection strength between the ladder pins 413 and the circuit board can be improved, so as to maintain and increase the life of the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 59. FIG. 59 is a schematic flowchart of a method S500 for forming a package structure according to the fifth embodiment of the present invention. As can be seen from FIG. 59 , the method S500 for forming the package structure includes an etching step S501 , a molding step S502 , a laser step S503 , a plating step S504 and a cutting step S505 .

Please refer to FIGS. 60 and 61. FIG. 60 shows a schematic diagram of the etching step S501 in the fifth embodiment in FIG. 59, and FIG. 61 shows the lead frame 510 in FIG. 60 along the line 61- in the fifth embodiment. Schematic cross-section of 61'. As can be seen from FIG. 60 and FIG. 61 , in the etching step S501 , the plurality of scribe lines 511 of the lead frame 510 are etched. In the fifth embodiment, the upper surface of the scribe line 511 of the lead frame 510 is etched to form an etching groove 512, and the etching depth can be equal to half of the thickness of the lead frame 510, but not limited thereto.

Please refer to FIGS. 62 and 63. FIG. 62 shows a schematic diagram of the molding step S502 in the fifth embodiment in FIG. 59, and FIG. 63 shows the lead frame 510 in FIG. 62 along the line 63- in the fifth embodiment. Schematic cross-section of 63'. As can be seen from FIG. 62 and FIG. 63 , the plastic packaging material 520 covers the lead frame 510 before the laser step S503 .

Please refer to FIGS. 64 and 65. FIG. 64 shows a schematic diagram of the laser step S503 in the fifth embodiment in FIG. 59, and FIG. 65 shows the lead frame 510 in FIG. 64 along the line 65 in the fifth embodiment. -65' cross-sectional schematic diagram. It can be seen from FIG. 64 and FIG. 65 , in the laser step S503 , the laser beam L removes the plastic packaging material 520 covering an upper surface of the scribe line 511 , and the laser beam L removes the scribe line 511 of the lead frame 510 . A portion of the upper surface where the plastic encapsulation material 520 is only partially removed.

Please refer to Table 5 below. Table 5 shows the parameters of the laser beam L used in the laser step S503 in the fifth embodiment, but the parameters in Table 5 are not limited. Table 5 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the objects to be removed (such as part of the plastic packaging material 520 and part of the lead frame 510 ) and their depths can be selected through the laser step S503 , and the laser step S503 is not limited to one, but can also be more than two, depending on The energy and parameters of the laser beam L. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S503 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIGS. 66 and 67. FIG. 66 shows a schematic diagram of the electroplating step S504 in the fifth embodiment in FIG. 59, and FIG. 67 shows the lead frame 510 in FIG. 66 along the line 67- in the fifth embodiment. Schematic cross-section of 67'. It can be seen from FIG. 66 and FIG. 67 that the plurality of plated surfaces 530 are disposed on the plurality of regions on the lead frame 510 that are not covered by the plastic packaging material 520 .

Please refer to FIG. 68 , FIG. 69 and FIG. 70 . FIG. 68 shows a schematic diagram of the cutting step S505 in the fifth embodiment in FIG. 59 , and FIG. 69 shows the package structure 500 in FIG. 68 in the fifth embodiment along the A schematic cross-sectional view of the line 69-69' is shown. FIG. 70 is a schematic cross-sectional view of the package structure 500 of the fifth embodiment in FIG. 68 along the line 70-70'. As can be seen from FIGS. 68 to 70 , the cutting step S505 is to cut the cutting lines 511 of the lead frame 510 to form the package structure 500 . In detail, the cutting track 511 of the lead frame 510 is cut by a cutter, and the cutting width of the cutter is equal to the etching width of the etching step S501 (ie, the width of the etching groove 512 ), so the ladder-shaped pins 513 are formed, and the electroplating surface 530 is provided on the outer periphery of the ladder-shaped pins 513 . Furthermore, since the thickness of the scribe line 511 has been reduced in the etching step S501, the generation of burrs can be reduced during the dicing step S505.

Please refer to FIGS. 71 and 72. FIG. 71 is a schematic side view of the package structure 500 in the fifth embodiment in FIG. 59, and FIG. 72 is a partial schematic view of the package structure 500 in the fifth embodiment in FIG. 59. As can be seen from FIGS. 71 and 72, the package structure 500 includes a plurality of ladder-shaped pins 513, the ladder-shaped pins 513 protrude from the edge of the plastic packaging material 520, and each ladder-shaped pin 513 includes seven electroplating surfaces 530, and is close to the package The ladder-shaped pins 513 on the lower surface of the structure 500 protrude from the edge of the plastic packaging material 520 .

Therefore, through the method S500 for forming the package structure of the fifth embodiment, it is beneficial to increase the side solderable area of the package structure 500 . Therefore, the connection strength between the ladder pins 513 and the circuit board can be improved, so as to maintain and increase the life of the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 73 , which is a schematic flowchart of a method S600 for forming a package structure according to a sixth embodiment of the present invention. As can be seen from FIG. 73 , the method S600 for forming the package structure includes an etching step S601 , a molding step S602 , a laser step S603 , a plating step S604 and a cutting step S605 .

Please refer to FIGS. 74 and 75. FIG. 74 shows a schematic diagram of the etching step S601 in the sixth embodiment in FIG. 73, and FIG. 75 shows the lead frame 610 in FIG. 74 along the section line 75- in the sixth embodiment. Schematic cross-section of 75'. As can be seen from FIG. 74 and FIG. 75 , in the etching step S601 , the plurality of scribe lines 611 of the lead frame 610 are etched. In the sixth embodiment, an etching groove 612 is formed by etching the upper surface of the scribe line 611 of the lead frame 610 , and the etching depth may be less than half of the thickness of the lead frame 610 , but not limited thereto. Further, the scribe line 611 may have a plurality of recessed parts 614 , the recessed depth of the recessed parts 614 may be less than half of the thickness of the lead frame 610 , the width of each recessed part 614 may be greater than the width of each etching groove 612 , and each recessed part 614 Located in the center of the cutting lane 611 .

Please refer to FIGS. 76 and 77. FIG. 76 shows a schematic diagram of the molding step S602 in the sixth embodiment in FIG. 73, and FIG. 77 shows the lead frame 610 in the sixth embodiment in FIG. 76 along the section line 77- Schematic cross-section of 77'. As can be seen from FIG. 76 and FIG. 77 , the plastic packaging material 620 covers the lead frame 610 before the laser step S603 . It is worth mentioning that the plastic packaging material 620 is not filled into the recessed portion 614 .

Please refer to FIGS. 78 and 79. FIG. 78 shows a schematic diagram of the laser step S603 in the sixth embodiment in FIG. 73, and FIG. 79 shows the lead frame 610 in FIG. 78 along the section line 79 in the sixth embodiment. Schematic cross-section of -79'. As can be seen from FIGS. 78 and 79 , in the laser step S603 , the laser beam L removes the plastic packaging material 620 covering an upper surface of the scribe line 611 , and the laser beam L removes the scribe line 611 of the lead frame 610 . A portion of the upper surface where the plastic encapsulation material 620 is only partially removed.

Please refer to Table 6 below. Table 6 shows the parameters of the laser beam L used in the laser step S603 in the sixth embodiment, but the parameters in Table 6 are not limited. Table 6 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the objects to be removed (such as part of the plastic packaging material 620 and part of the lead frame 610 ) and their depths can be selected through the laser step S603 , and the laser step S603 is not limited to one, but can also be more than two, depending on The energy and parameters of the laser beam L. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S603 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIGS. 80 and 81. FIG. 80 shows a schematic diagram of the electroplating step S604 in the sixth embodiment in FIG. 73, and FIG. 81 shows the lead frame 610 in FIG. 80 along the section line 81- in the sixth embodiment. Schematic cross-section of 81'. As can be seen from FIG. 80 and FIG. 81 , the plurality of plated surfaces 630 are disposed on the plurality of areas on the lead frame 610 that are not covered by the plastic packaging material 620 .

Please refer to FIG. 82 , FIG. 83 and FIG. 84 . FIG. 82 shows a schematic diagram of the cutting step S605 in the sixth embodiment in FIG. 73 , and FIG. 83 shows the package structure 600 in FIG. 82 in the sixth embodiment. A schematic cross-sectional view of the section line 83-83' is shown, and FIG. 84 is a schematic cross-sectional view of the package structure 600 of the sixth embodiment shown in FIG. 82 along the section line 84-84'. As can be seen from FIGS. 82 to 84 , the cutting step S605 is to cut the cutting lines 611 of the lead frame 610 to form the package structure 600 . In detail, the cutting path 611 of the lead frame 610 is cut by a cutter, and the cutting width of the cutter is equal to the etching width of the etching step S601 (ie, the width of the etching groove 612 ), so the ladder-shaped pins 613 are formed, and the electroplating surface 630 is provided on the outer periphery of the ladder-shaped pins 613 . Furthermore, since the thickness of the scribe line 611 has been reduced in the etching step S601, the generation of burrs can be reduced during the dicing step S605.

Please refer to FIGS. 85 and 86 . FIG. 85 is a schematic side view of the package structure 600 in the sixth embodiment in FIG. 73 , and FIG. 86 is a partial schematic view of the package structure 600 in the sixth embodiment in FIG. 73 . It can be seen from FIG. 85 and FIG. 86 that the package structure 600 includes a plurality of ladder-shaped pins 613, the ladder-shaped pins 613 protrude from the edge of the plastic packaging material 620, and each ladder-shaped pin 613 includes ten plated surfaces 630, and is close to the package. The ladder-shaped pins 613 on the lower surface of the structure 600 protrude from the edge of the plastic packaging material 620 .

Therefore, through the method S600 for forming the package structure of the sixth embodiment, it is beneficial to increase the side solderable area of the package structure 600 . Therefore, the connection strength between the ladder pins 613 and the circuit board can be improved, so as to maintain and increase the service life of the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 87. FIG. 87 is a schematic flowchart of a method S700 for forming a package structure according to a seventh embodiment of the present invention. As can be seen from FIG. 87 , the method S700 for forming the package structure includes an etching step S701 , a molding step S702 , a laser step S703 , a plating step S704 and a cutting step S705 .

Please refer to FIGS. 88 and 89. FIG. 88 shows a schematic diagram of the etching step S701 in the seventh embodiment in FIG. 87, and FIG. 89 shows the lead frame 710 in FIG. 88 along the line 89- in the seventh embodiment. Schematic cross-section of 89'. As can be seen from FIG. 88 and FIG. 89 , in the etching step S701 , the plurality of scribe lines 711 of the lead frame 710 are etched. In the seventh embodiment, an etching groove 712 is formed by etching the upper surface of the scribe line 711 of the lead frame 710 , and the etching depth may be equal to half of the thickness of the lead frame 710 , but not limited thereto. Further, the scribe line 711 may have a plurality of recesses 714 , the recessed depth of the recesses 714 may be less than half of the thickness of the lead frame 710 , the width of each recess 714 may be less than the width of each etching groove 712 , and the recess 714 is located in the Both sides of the cutting lane 711 . Specifically, the width of the recessed portion 714 is L0, and the thickness of the lead frame 710 is d, which may satisfy the following condition: 0.5 d ≤ L0, but not limited thereto.

Please refer to FIGS. 90 and 91. FIG. 90 shows a schematic diagram of the molding step S702 in the seventh embodiment in FIG. 87, and FIG. 91 shows the lead frame 710 in the seventh embodiment in FIG. 90 along the section line 91- Schematic cross-section of 91'. As can be seen from FIG. 90 and FIG. 91 , the plastic packaging material 720 covers the lead frame 710 before the laser step S703 .

Please refer to FIGS. 92 and 93. FIG. 92 shows a schematic diagram of the laser step S703 in the seventh embodiment in FIG. 87, and FIG. 93 shows the lead frame 710 in FIG. 92 along the section line 93 in the seventh embodiment. Schematic cross-section of -93'. As can be seen from FIGS. 92 and 93 , in the laser step S703 , the laser beam L removes the plastic packaging material 720 covering an upper surface of the scribe line 711 , wherein the plastic packaging material 720 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 711 to remove the plastic packaging material 720 , the plastic packaging material 720 disposed in the recessed portion 714 will not be irradiated by the laser beam L, so setting The plastic packaging material 720 in the recessed portion 714 remains therein.

Please refer to Table 7 below. Table 7 is the parameters of the laser beam L used in the laser step S703 in the seventh embodiment, but the parameters in Table 7 are not limited. Table 7 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the object to be removed (eg part of the plastic packaging material 720 ) and its depth can be selected through the laser step S703 , and the laser step S703 is not limited to one, but can also be more than two, depending on the laser beam L. energy and parameters. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S703 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIGS. 94 and 95. FIG. 94 shows a schematic diagram of the electroplating step S704 in the seventh embodiment in FIG. 87, and FIG. 95 shows the lead frame 710 in the seventh embodiment in FIG. 94 along the section line 95- Schematic cross-section of 95'. As can be seen from FIG. 94 and FIG. 95 , the plurality of plated surfaces 730 are disposed on the plurality of regions on the lead frame 710 that are not covered by the plastic packaging material 720 .

Please refer to FIG. 96 , FIG. 97 and FIG. 98 . FIG. 96 shows a schematic diagram of the cutting step S705 in the seventh embodiment in FIG. 87 , and FIG. 97 shows the package structure 700 in the seventh embodiment in FIG. 96 A schematic cross-sectional view of the line 97-97' is shown. FIG. 98 is a schematic cross-sectional view of the package structure 700 of the seventh embodiment shown in FIG. 96 along the line 98-98'. As can be seen from FIGS. 96 to 98 , the cutting step S705 is to cut the cutting lines 711 of the lead frame 710 to form the package structure 700 . Specifically, the cutting path 711 of the lead frame 710 is cut by a cutter, and the cutting width of the cutter is smaller than the etching width of the etching step S701 (ie, the width of the etching groove 712 ), so the protruding pins 713 are formed, and the plated surface 730 is disposed on the The outer periphery of the pin 713 is protruded. Furthermore, since the thickness of the scribe line 711 has been reduced in the etching step S701, the generation of burrs can be reduced during the dicing step S705.

Please refer to FIGS. 99 and 100. FIG. 99 is a schematic side view of the package structure 700 in the seventh embodiment in FIG. 87, and FIG. 100 is a partial schematic view of the package structure 700 in the seventh embodiment in FIG. 87. As can be seen from FIGS. 99 and 100 , the package structure 700 includes a plurality of protruding pins 713 . The protruding pins 713 protrude from the edge of the plastic packaging material 720 , and each protruding pin 713 includes seven electroplating surfaces 730 and is close to the bottom of the package structure 700 . The protruding pins 713 on the surface protrude from the edge of the plastic packaging material 720 .

Therefore, through the method S700 for forming the package structure of the seventh embodiment, it is beneficial to increase the side solderable area of the package structure 700 . Furthermore, as can be seen from FIG. 97 , because the protruding pins 713 protrude from the plastic packaging material 720 and the parts covered by the plastic packaging materials 720 have a similar gull-wing shape, the protruding pins 713 have more mechanical strength. Therefore, the connection strength between the protruding pins 713 and the circuit board can be improved, so as to maintain and increase the life of the protruding pins 713 provided on the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 101 . FIG. 101 is a schematic flowchart of a method S800 for forming a package structure according to an eighth embodiment of the present invention. As can be seen from FIG. 101 , the method S800 for forming the package structure includes an etching step S801 , a molding step S802 , a laser step S803 , a plating step S804 and a cutting step S805 .

Please refer to FIG. 102 and FIG. 103. FIG. 102 shows a schematic diagram of the etching step S801 in the eighth embodiment in FIG. 101, and FIG. 103 shows the lead frame 810 in FIG. 102 along the section line 103- in the eighth embodiment. Schematic cross-section of 103'. As can be seen from FIG. 102 and FIG. 103 , in the etching step S801 , the plurality of scribe lines 811 of the lead frame 810 are etched. In the eighth embodiment, an etching groove 812 is formed by etching the upper surface of the scribe line 811 of the lead frame 810 , and the etching depth can be equal to half of the thickness of the lead frame 810 , but not limited thereto. Further, the scribe line 811 may have a plurality of recesses 814, the recessed depth of the recesses 814 may be less than half of the thickness of the lead frame 810, the width of each recess 814 may be smaller than the width of each etching groove 812, and the recess 814 is located in the Both sides of the cutting lane 811 .

Please refer to FIGS. 104 and 105. FIG. 104 shows a schematic diagram of the molding step S802 in the eighth embodiment in FIG. 101, and FIG. 105 shows the lead frame 810 in the eighth embodiment in FIG. 104 along the section line 105- Schematic cross-section of 105'. As can be seen from FIG. 104 and FIG. 105 , the plastic packaging material 820 covers the lead frame 810 before the laser step S803 .

Please refer to FIG. 106 and FIG. 107 , FIG. 106 is a schematic diagram of the laser step S803 in the eighth embodiment in FIG. 101 , and FIG. 107 is the lead frame 810 in FIG. 106 along the section line 107 in the eighth embodiment. Schematic cross-section of -107'. As can be seen from FIGS. 106 and 107 , in the laser step S803 , the laser beam L removes the plastic packaging material 820 covering an upper surface of the scribe line 811 , wherein the plastic packaging material 820 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 811 to remove the plastic packaging material 820 , the plastic packaging material 820 disposed in the recessed portion 814 will not be irradiated by the laser beam L, so setting The plastic packaging material 820 in the recessed portion 814 remains therein.

Please refer to Table 8 below. Table 8 is the parameters of the laser beam L used in the laser step S803 in the eighth embodiment, but the parameters in Table 8 are not limited. Table 8 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the object to be removed (eg part of the plastic packaging material 820 ) and its depth can be selected through the laser step S803 , and the laser step S803 is not limited to one, but can also be more than two, which depends on the laser beam L. energy and parameters. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S803 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIGS. 108 and 109. FIG. 108 shows a schematic diagram of the electroplating step S804 in the eighth embodiment in FIG. 101, and FIG. 109 shows the lead frame 810 in the eighth embodiment in FIG. 108 along the section line 109- Schematic cross-section of 109'. As can be seen from FIG. 108 and FIG. 109 , the plurality of plated surfaces 830 are disposed on the plurality of areas on the lead frame 810 that are not covered by the plastic packaging material 820 .

Please refer to FIG. 110 , FIG. 111 and FIG. 112 . FIG. 110 is a schematic diagram of the cutting step S805 in the eighth embodiment shown in FIG. 101 , and FIG. 111 is a schematic diagram of the package structure 800 in FIG. 110 in the eighth embodiment. 112 is a schematic cross-sectional view of the package structure 800 in the eighth embodiment shown in FIG. 110 along the line 112-112'. As can be seen from FIGS. 110 to 112 , the cutting step S805 is to cut the cutting line 811 of the lead frame 810 to form the package structure 800 . In detail, the cutting path 811 of the lead frame 810 is cut by a cutter, and the cutting width of the cutter is smaller than the etching width of the etching step S801 (ie, the width of the etching groove 812 ), so the ladder-shaped pins 813 are formed, and the electroplating surface 830 is provided on the periphery of the ladder pin 813 . Furthermore, since the thickness of the scribe line 811 has been reduced in the etching step S801, the generation of burrs can be reduced during the dicing step S805.

Please refer to FIGS. 113 and 114 . FIG. 113 is a schematic side view of the package structure 800 in the eighth embodiment shown in FIG. 101 , and FIG. 114 is a partial schematic view of the package structure 800 in the eighth embodiment in FIG. 101 . It can be seen from FIG. 113 and FIG. 114 that the package structure 800 includes a plurality of ladder-shaped pins 813 , the ladder-shaped pins 813 protrude from the edge of the plastic packaging material 820 , and each ladder-shaped pin 813 includes six plating surfaces 830 and is close to the package. The ladder pins 813 on the lower surface of the structure 800 protrude from the edge of the plastic packaging material 820 .

Therefore, through the method S800 for forming the package structure of the eighth embodiment, it is beneficial to increase the side solderable area of the package structure 800 . Furthermore, as can be seen from FIG. 111 , because the parts of the ladder-shaped pins 813 protruding from the plastic packaging material 820 and covered by the plastic packaging material 820 are similar to gull-wings, the ladder-shaped pins 813 have more mechanical strength. Therefore, the connection strength between the ladder pins 813 and the circuit board can be improved, so as to maintain and increase the life of the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 115 . FIG. 115 is a schematic flowchart of a method S900 for forming a package structure according to the ninth embodiment of the present invention. As can be seen from FIG. 115, the method S900 for forming the package structure includes an etching step S901, a molding step S902, a laser step, a plating step S905 and a cutting step S906, wherein the laser step may include a first laser step S903 and a second laser step S904, and the second laser step S904 is performed after the first laser step S903.

Please refer to FIGS. 116 and 117. FIG. 116 is a schematic diagram of the etching step S901 in the ninth embodiment shown in FIG. 115, and FIG. 117 is a schematic diagram of the lead frame 910 in the ninth embodiment in FIG. 116 along the section line 117- Schematic cross-section of 117'. As can be seen from FIG. 116 and FIG. 117 , in the etching step S901 , the plurality of scribe lines 911 of the lead frame 910 are etched. In the ninth embodiment, an etching groove 912 is formed by etching the upper surface of the scribe line 911 of the lead frame 910, and the etching depth can be equal to half of the thickness of the lead frame 910, but is not limited thereto. Further, the scribe line 911 may have a plurality of recessed portions 914 , the recessed portion 914 may have a recessed depth less than half of the thickness of the lead frame 910 , the width of each recessed portion 914 may be equal to the width of each etching groove 912 , and the recessed portion 914 is located in the Both sides of the cutting lane 911 . Specifically, the width of the recessed portion 914 is L0, and the thickness of the lead frame 910 is d, which may satisfy the following condition: 0.5 d ≤ L0, but not limited thereto.

Please refer to FIG. 118 and FIG. 119. FIG. 118 is a schematic diagram of the molding step S902 in the ninth embodiment shown in FIG. 115, and FIG. 119 shows the lead frame 910 in the ninth embodiment in FIG. 118 along the section line 119- Schematic cross-section of 119'. As can be seen from FIG. 118 and FIG. 119 , the plastic packaging material 920 covers the lead frame 910 before the laser step.

Please refer to FIG. 120 and FIG. 121 , FIG. 120 is a schematic diagram of the first laser step S903 in the ninth embodiment in FIG. 115 , and FIG. 121 is a cross-section of the lead frame 910 in FIG. 120 in the ninth embodiment. A schematic cross-sectional view of line 121-121'. As can be seen from FIG. 120 and FIG. 121 , in the laser step, a laser beam L is used to remove the plastic packaging material 920 covering the scribe line 911 . Specifically, in the ninth embodiment, in the first laser step S903 , the laser beam L removes the plastic packaging material 920 covering an upper surface of the scribe line 911 , and the plastic packaging material 920 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 911 to remove the plastic packaging material 920 , the plastic packaging material 920 disposed in the recessed portion 914 will not be irradiated by the laser beam L, so setting The plastic packaging material 920 in the recessed portion 914 remains therein.

Please refer to FIGS. 122 and 123. FIG. 122 is a schematic diagram of the second laser step S904 in the ninth embodiment shown in FIG. 115, and FIG. 123 is a cross-section of the lead frame 910 in FIG. 122 in the ninth embodiment. A schematic cross-sectional view of line 123-123'. 122 and 123, the second laser step S904 is that the laser beam L removes the plastic packaging material 920 covering the lower surface of the scribe line 911, and the plastic packaging material 920 is only partially removed.

Please refer to Table 9 below. Table 9 shows the parameters of the laser beam L used in the first laser step S903 and the second laser step S904 in the ninth embodiment, but the parameters in Table 9 are not limited. Table 9 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, through the first laser step S903 and the second laser step S904, the object to be removed (eg, part of the plastic packaging material 920) and its depth can be selected. Thereby, the range of removal can be effectively controlled. Specifically, both the first laser step S903 and the second laser step S904 may be composed of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIG. 124 and FIG. 125. FIG. 124 shows a schematic diagram of the electroplating step S905 in the ninth embodiment in FIG. 115, and FIG. 125 shows the lead frame 910 in FIG. 124 along the section line 125- in the ninth embodiment. Schematic cross-section of 125'. As can be seen from FIG. 124 and FIG. 125 , the plurality of plated surfaces 930 are disposed on the plurality of regions on the lead frame 910 that are not covered by the plastic packaging material 920 .

Please refer to FIG. 126 , FIG. 127 and FIG. 128 . FIG. 126 is a schematic diagram of the cutting step S906 in the ninth embodiment shown in FIG. 115 , and FIG. 127 is a schematic diagram of the package structure 900 in FIG. 126 in the ninth embodiment. 128 is a schematic cross-sectional view of the package structure 900 in the ninth embodiment shown in FIG. 126 along the line 128-128'. As can be seen from FIGS. 126 to 128 , the cutting step S906 is to cut the cutting lines 911 of the lead frame 910 to form the package structure 900 . In detail, the cutting track 911 of the lead frame 910 is cut by a cutter, and the cutting width of the cutter is smaller than the etching width of the etching step S901 (ie, the width of the etching groove 912 ), so the protruding pins 913 are formed, and the electroplating surface 930 is disposed on the The outer periphery of the pin 913 is protruded. Furthermore, since the thickness of the dicing line 911 has been reduced in the etching step S901, the generation of burrs can be reduced during the dicing step S906.

Please refer to FIGS. 129 and 130. FIG. 129 is a schematic side view of the package structure 900 of the ninth embodiment shown in FIG. 115, and FIG. 130 is a partial schematic view of the package structure 900 of the ninth embodiment shown in FIG. 115. It can be seen from FIG. 129 and FIG. 130 that the package structure 900 includes a plurality of protruding pins 913 , the protruding pins 913 protrude from the edge of the plastic packaging material 920 , and each protruding pin 913 includes nine electroplating surfaces 930 and is close to the bottom of the package structure 900 . The protruding pins 913 on the surface protrude from the edge of the plastic packaging material 920 .

Therefore, through the method S900 for forming the package structure of the ninth embodiment, it is beneficial to increase the side solderable area of the package structure 900 . Furthermore, as can be seen from FIG. 127 , because the protruding pins 913 protrude from the plastic packaging material 920 and the portion covered by the plastic packaging material 920 is similar to a gull-wing shape, the protruding pins 913 have more mechanical strength. Therefore, the connection strength between the protruding pins 913 and the circuit board can be improved, so as to maintain and increase the life of the protruding pins 913 provided on the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 131 . FIG. 131 is a schematic flowchart of a method S1000 for forming a package structure according to the tenth embodiment of the present invention. As can be seen from FIG. 131 , the method S1000 for forming the package structure includes an etching step S1001, a molding step S1002, a laser step, a plating step S1005 and a cutting step S1006, wherein the laser step may include a first laser step S1003 and a second laser step S1004, and the second laser step S1004 is performed after the first laser step S1003.

Please refer to FIG. 132 and FIG. 133. FIG. 132 shows a schematic diagram of the etching step S1001 in FIG. 131 in the tenth embodiment, and FIG. 133 shows the lead frame 1010 in FIG. 132 in the tenth embodiment along the section line 133- Schematic cross-section of 133'. As can be seen from FIG. 132 and FIG. 133 , in the etching step S1001 , the plurality of scribe lines 1011 of the lead frame 1010 are etched. In the tenth embodiment, the upper surface of the scribe line 1011 of the lead frame 1010 is etched to form an etching groove 1012, and the etching depth can be equal to half of the thickness of the lead frame 1010, but is not limited thereto. Further, the scribe line 1011 may have a plurality of recesses 1014 , the recess depth of the recesses 1014 may be less than half of the thickness of the lead frame 1010 , the width of each recess 1014 may be equal to the width of each etching groove 1012 , and the recess 1014 is located in the Both sides of the cutting lane 1011.

Please refer to FIGS. 134 and 135. FIG. 134 shows a schematic diagram of the molding step S1002 in the tenth embodiment in FIG. 131, and FIG. 135 shows the lead frame 1010 in the tenth embodiment in FIG. 134 along the section line 135- Schematic cross-section of 135'. It can be seen from FIG. 134 and FIG. 135 that the plastic packaging material 1020 covers the lead frame 1010 before the laser step.

Please refer to FIGS. 136 and 137. FIG. 136 is a schematic diagram of the first laser step S1003 in the tenth embodiment shown in FIG. 131, and FIG. 137 is a cross-section of the lead frame 1010 in the tenth embodiment in FIG. 136. Schematic cross-sectional view of line 137-137'. As can be seen from FIG. 136 and FIG. 137 , in the laser step, a laser beam L is used to remove the plastic packaging material 1020 covering the scribe line 1011 . Specifically, in the tenth embodiment, in the first laser step S1003 , the laser beam L removes the plastic packaging material 1020 covering an upper surface of the scribe line 1011 , and the plastic packaging material 1020 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 1011 to remove the plastic packaging material 1020, the plastic packaging material 1020 disposed in the recessed portion 1014 will not be irradiated by the laser beam L, so setting The plastic packaging material 1020 in the recessed portion 1014 remains therein.

Please refer to FIGS. 138 and 139. FIG. 138 is a schematic diagram of the second laser step S1004 in FIG. 131 in the tenth embodiment, and FIG. 139 is a cross-section of the lead frame 1010 in the tenth embodiment in FIG. 138. Schematic cross-sectional view of line 139-139'. 138 and 139 , in the second laser step S1004 , the laser beam L removes the plastic packaging material 1020 covering the lower surface of the scribe line 1011 , and the plastic packaging material 1020 is only partially removed.

Please refer to Table 10 below. Table 10 shows the parameters of the laser beam L used in the first laser step S1003 and the second laser step S1004 in the tenth embodiment, but the parameters in Table 10 are not limited. Table 10 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, through the first laser step S1003 and the second laser step S1004, the object to be removed (eg, part of the plastic packaging material 1020) and its depth can be selected. Thereby, the range of removal can be effectively controlled. Specifically, both the first laser step S1003 and the second laser step S1004 may be composed of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIG. 140 and FIG. 141. FIG. 140 is a schematic diagram of the electroplating step S1005 in the tenth embodiment shown in FIG. 131, and FIG. 141 is a schematic diagram of the lead frame 1010 in FIG. 140 in the tenth embodiment along the section line 141- Schematic cross-section of 141'. As can be seen from FIG. 140 and FIG. 141 , the plurality of plated surfaces 1030 are disposed on the plurality of areas on the lead frame 1010 that are not covered by the plastic packaging material 1020 .

Please refer to FIG. 142 , FIG. 143 and FIG. 144 . FIG. 142 is a schematic diagram of the cutting step S1006 in the tenth embodiment shown in FIG. 131 , and FIG. 143 is a schematic diagram of the package structure 1000 in the tenth embodiment in FIG. 142 . 144 is a schematic cross-sectional view of the package structure 1000 in the tenth embodiment shown in FIG. 142 along the cross-sectional line 144-144'. As can be seen from FIGS. 142 to 144 , the cutting step S1006 is to cut the cutting lines 1011 of the lead frame 1010 to form the package structure 1000 . In detail, the cutting path 1011 of the lead frame 1010 is cut by a cutter, and the cutting width of the cutter is smaller than the width of the etching groove 1012 (ie, the width of the etching groove 1012 ), so the protruding pins 1013 are formed, and the electroplating surface 1030 is disposed on the protruding Outer periphery of pin 1013. Furthermore, since the thickness of the scribe line 1011 has been reduced in the etching step S1001, the generation of burrs can be reduced during the dicing step S1006.

Please refer to FIGS. 145 and 146 . FIG. 145 is a schematic side view of the package structure 1000 in the tenth embodiment shown in FIG. 131 , and FIG. 146 is a partial schematic view of the package structure 1000 in the tenth embodiment in FIG. 131 . It can be seen from FIG. 145 and FIG. 146 that the package structure 1000 includes a plurality of protruding pins 1013 , the protruding pins 1013 protrude from the edge of the plastic packaging material 1020 , and each protruding pin 1013 includes eight plating surfaces 1030 , and is close to the bottom of the package structure 1000 . The protruding pins 1013 on the surface protrude from the edge of the plastic packaging material 1020 .

Therefore, through the method S1000 for forming the package structure of the tenth embodiment, it is beneficial to increase the side solderable area of the package structure 1000 . Furthermore, as can be seen from FIG. 143 , because the protruding pins 1013 protrude from the plastic packaging material 1020 and the part covered by the plastic packaging material 1020 is similar to a gull-wing shape, the protruding pins 1013 have more mechanical strength. Therefore, the connection strength between the protruding pins 1013 and the circuit board can be improved, so as to maintain and increase the life of the protruding pins 1013 provided on the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 147 . FIG. 147 is a schematic flowchart of a method S1100 for forming a package structure according to an eleventh embodiment of the present invention. As can be seen from FIG. 147, the method S1100 for forming the package structure includes an etching step S1101, a molding step S1102, a laser step, a plating step S1105 and a cutting step S1106, wherein the laser step may include a first laser step S1103 and a second laser step S1104, and the second laser step S1104 is performed after the first laser step S1103.

Please refer to FIG. 148 and FIG. 149. FIG. 148 is a schematic diagram of the etching step S1101 in FIG. 147 in the eleventh embodiment, and FIG. 149 shows the lead frame 1110 in FIG. 148 in the eleventh embodiment along the section line. Schematic cross-section of 149-149'. As can be seen from FIG. 148 and FIG. 149 , in the etching step S1101 , the plurality of scribe lines 1111 of the lead frame 1110 are etched. In the eleventh embodiment, the lower surface of the scribe line 1111 of the lead frame 1110 is etched to form two etching grooves 1112, and the etching depth may be less than half of the thickness of the lead frame 1110, but not limited thereto.

Please refer to FIG. 150 and FIG. 151. FIG. 150 is a schematic diagram of the molding step S1102 in the eleventh embodiment shown in FIG. 147, and FIG. 151 is a section line of the lead frame 1110 in FIG. 150 in the eleventh embodiment. Schematic cross section of 151-151'. As can be seen from FIG. 150 and FIG. 151 , the plastic packaging material 1120 covers the lead frame 1110 before the laser step.

Please refer to FIG. 152 and FIG. 153 , FIG. 152 is a schematic diagram of the first laser step S1103 in FIG. 147 in the eleventh embodiment, and FIG. 153 is the lead frame 1110 in FIG. 152 in the eleventh embodiment. A schematic cross-sectional view along section line 153-153'. As can be seen from FIG. 152 and FIG. 153 , in the laser step, a laser beam L is used to remove the plastic packaging material 1120 covering the scribe line 1111 . Specifically, in the eleventh embodiment, in the first laser step S1103 , the laser beam L removes the plastic packaging material 1120 covering an upper surface of the scribe line 1111 , and the plastic packaging material 1120 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 1111 to remove the plastic packaging material 1120 , the plastic packaging material 1120 disposed in the etching groove 1112 will not be irradiated by the laser beam L, so setting The plastic packaging material 1120 in the etching groove 1112 remains therein.

Please refer to FIG. 154 and FIG. 155. FIG. 154 is a schematic diagram of the second laser step S1104 in FIG. 147 in the eleventh embodiment, and FIG. 155 is the lead frame 1110 in FIG. 154 in the eleventh embodiment. A schematic cross-sectional view along section line 155-155'. 154 and 155 , in the second laser step S1104 , the laser beam L removes the plastic packaging material 1120 covering the lower surface of the scribe line 1111 , and the plastic packaging material 1120 is only partially removed.

Please refer to Table 11 below. Table 11 shows the parameters of the laser beam L used in the first laser step S1103 and the second laser step S1104 in the eleventh embodiment, but not the parameters in Table 11. limited. Table 11 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, through the first laser step S1103 and the second laser step S1104, the object to be removed (eg, part of the plastic packaging material 1120) and its depth can be selected. Thereby, the range of removal can be effectively controlled. Specifically, both the first laser step S1103 and the second laser step S1104 may be composed of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIG. 156 and FIG. 157. FIG. 156 is a schematic diagram of the electroplating step S1105 in the eleventh embodiment in FIG. 147, and FIG. 157 is the lead frame 1110 in the eleventh embodiment in FIG. 156 along the section line. Schematic cross-section of 157-157'. As can be seen from FIG. 156 and FIG. 157 , the plurality of plated surfaces 1130 are disposed on the plurality of areas on the lead frame 1110 that are not covered by the plastic packaging material 1120 .

Please refer to FIG. 158 , FIG. 159 and FIG. 160 . FIG. 158 is a schematic diagram of the cutting step S1106 in the eleventh embodiment shown in FIG. 147 , and FIG. 159 is a schematic diagram of the package structure in FIG. 158 in the eleventh embodiment. 1100 is a schematic cross-sectional view along the line 159-159', and FIG. 160 is a schematic cross-sectional view of the package structure 1100 along the line 160-160' in FIG. 158 in the eleventh embodiment. As can be seen from FIGS. 158 to 160 , the cutting step S1106 is to cut the cutting lines 1111 of the lead frame 1110 to form the package structure 1100 . In detail, the cutting path 1111 of the lead frame 1110 is cut by a knife, so the protruding pins 1113 are formed, and the plated surface 1130 is disposed on the outer periphery of the protruding pins 1113 . Furthermore, the width of the protruding pins 1113 is wider, so the generation of burrs can be reduced during the cutting step S1106.

Please refer to FIGS. 161 and 162. FIG. 161 is a schematic side view of the package structure 1100 in the eleventh embodiment shown in FIG. 147, and FIG. 162 is a part of the package structure 1100 in the eleventh embodiment in FIG. 147. Schematic. It can be seen from FIG. 161 and FIG. 162 that the package structure 1100 includes a plurality of protruding pins 1113 , the protruding pins 1113 protrude from the edge of the plastic packaging material 1120 , and each protruding pin 1113 includes six plating surfaces 1130 and is close to the bottom of the package structure 1100 . The protruding pins 1113 on the surface protrude from the edge of the plastic packaging material 1120 .

Therefore, through the method S1100 for forming the package structure of the eleventh embodiment, it is beneficial to increase the side solderable area of the package structure 1100 . Furthermore, as can be seen from FIG. 159 , because the protruding pins 1113 protrude from the plastic packaging material 1120 and the part covered by the plastic packaging material 1120 is similar to a gull-wing shape, the protruding pins 1113 have more mechanical strength. Therefore, the connection strength between the protruding pins 1113 and the circuit board can be improved, so as to maintain and increase the life of the protruding pins 1113 provided on the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 163 , which is a schematic flowchart of a method S1200 for forming a package structure according to a twelfth embodiment of the present invention. As can be seen from FIG. 163 , the method S1200 for forming the package structure includes an etching step S1201 , a molding step S1202 , a laser step S1203 , an electroplating step S1204 and a cutting step S1205 .

Please refer to FIG. 164 and FIG. 165. FIG. 164 is a schematic diagram of the etching step S1201 in the twelfth embodiment in FIG. 163, and FIG. 165 is the lead frame 1210 in FIG. 164 in the twelfth embodiment along the section line. Schematic cross-section of 165-165'. As can be seen from FIG. 164 and FIG. 165 , in the etching step S1201 , the plurality of scribe lines 1211 of the lead frame 1210 are etched. In the twelfth embodiment, the lower surface of the scribe line 1211 of the lead frame 1210 is etched to form two etching grooves 1212, and the etching depth may be less than half of the thickness of the lead frame 1210, but not limited thereto.

Please refer to FIG. 166 and FIG. 167 , FIG. 166 is a schematic diagram of the molding step S1202 in the twelfth embodiment in FIG. 163 , and FIG. 167 is the lead frame 1210 in FIG. 166 in the twelfth embodiment along the section line Schematic cross-section of 167-167'. As can be seen from FIG. 166 and FIG. 167 , the plastic packaging material 1220 covers the lead frame 1210 before the laser step S1203 .

Please refer to FIGS. 168 and 169. FIG. 168 is a schematic diagram of the laser step S1203 in FIG. 163 in the twelfth embodiment, and FIG. 169 is a cross-section of the lead frame 1210 in FIG. 168 in the twelfth embodiment. Schematic cross-sectional view of line 169-169'. 168 and 169, the laser beam L removes the plastic packaging material 1220 covering an upper surface of the scribe line 1211 in the laser step S1203, wherein the plastic packaging material 1220 is only partially removed. It is worth mentioning that, since the laser beam L is irradiated on the upper surface of the scribe line 1211 to remove the plastic packaging material 1220, the plastic packaging material 1220 disposed in the etching groove 1212 will not be irradiated by the laser beam L, so setting The plastic packaging material 1220 in the etching groove 1212 remains therein.

Please refer to Table 12 below. Table 12 shows the parameters of the laser beam L used in the laser step S1203 in the twelfth embodiment, but the parameters in Table 12 are not limited. Table 12 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, through the laser step S1203, the object to be removed (such as part of the plastic packaging material 1220) and its depth can be selected, and the laser step S1203 is not limited to one, but can also be more than two, which depends on the laser beam L. energy and parameters. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S1203 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam L with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIG. 170 and FIG. 171 , FIG. 170 is a schematic diagram of the electroplating step S1204 in the twelfth embodiment in FIG. 163 , and FIG. 171 is the lead frame 1210 in FIG. 170 in the twelfth embodiment along the section line Schematic cross-section of 171-171'. As can be seen from FIG. 170 and FIG. 171 , the plurality of plated surfaces 1230 are disposed on the plurality of areas on the lead frame 1210 that are not covered by the plastic packaging material 1220 .

Please refer to FIG. 172 , FIG. 173 , and FIG. 174 , FIG. 172 is a schematic diagram of the cutting step S1205 in the twelfth embodiment in FIG. 163 , and FIG. 173 is the package structure in FIG. 172 in the twelfth embodiment. 1200 is a schematic cross-sectional view along the line 173-173', and FIG. 174 is a schematic cross-sectional view of the package structure 1200 in the twelfth embodiment in FIG. 172 along the line 174-174'. As can be seen from FIGS. 172 to 174 , the cutting step S1205 is to cut the cutting lines 1211 of the lead frame 1210 to form the package structure 1200 . In detail, the cutting path 1211 of the lead frame 1210 is cut by a knife, so the protruding pins 1213 are formed, and the plated surface 1230 is disposed on the outer periphery of the protruding pins 1213 . Furthermore, the width of the protruding pins 1213 is wider, so the generation of burrs can be reduced during the cutting step S1205.

Please refer to FIGS. 175 and 176. FIG. 175 is a schematic side view of the package structure 1200 in the twelfth embodiment in FIG. 163, and FIG. 176 is a part of the package structure 1200 in the twelfth embodiment in FIG. 163. Schematic. It can be seen from FIG. 175 and FIG. 176 that the package structure 1200 includes a plurality of protruding pins 1213 , the protruding pins 1213 protrude from the edge of the plastic packaging material 1220 , and each protruding pin 1213 includes four electroplating surfaces 1230 and is close to the bottom of the package structure 1200 . The protruding pins 1213 on the surface protrude from the edge of the plastic packaging material 1220 .

Therefore, through the method S1200 for forming the package structure of the twelfth embodiment, it is beneficial to increase the side solderable area of the package structure 1200 . Furthermore, as can be seen from FIG. 173 , because the protruding pins 1213 protrude from the plastic packaging material 1220 and the part covered by the plastic packaging material 1220 is similar to a gull-wing shape, the protruding pins 1213 have more mechanical strength. Therefore, the connection strength between the protruding pins 1213 and the circuit board can be improved, so as to maintain and increase the life of the protruding pins 1213 on the circuit board, and further improve the reliability of the board level.

Please refer to FIG. 177 . FIG. 177 is a schematic flowchart of a method S1300 for forming a package structure according to the thirteenth embodiment of the present invention. As can be seen from FIG. 177 , the method S1300 for forming the package structure includes an etching step S1301 , a molding step S1302 , a laser step S1303 , a plating step S1304 and a cutting step S1305 .

Please refer to FIGS. 178 and 179. FIG. 178 shows a schematic diagram of the etching step S1301 in the thirteenth embodiment in FIG. 177, and FIG. 179 shows the lead frame 1310 in FIG. 178 in the thirteenth embodiment along the section line. Schematic cross-section of 179-179'. As can be seen from FIG. 178 and FIG. 179 , in the etching step S1301 , the plurality of scribe lines 1311 of the lead frame 1310 are etched. In the thirteenth embodiment, the lower surface of the scribe line 1311 of the lead frame 1310 is etched to form two etching grooves 1312, and the etching depth may be less than half of the thickness of the lead frame 1310, but not limited thereto. Further, the scribe line 1311 may have a plurality of recesses 1314 , the recess depth of the recesses 1314 may be less than half of the thickness of the lead frame 1310 , the width of each recess 1314 may be greater than the width of each etching groove 1312 , and each recess 1314 Located in the center of the cutting lane 1311.

Please refer to Fig. 180 and Fig. 181. Fig. 180 shows a schematic diagram of the molding step S1302 in Fig. 177 in the thirteenth embodiment, and Fig. 181 shows the lead frame 1310 in Fig. 180 along the section line in the thirteenth embodiment. Schematic cross-section of 181-181'. As can be seen from FIG. 180 and FIG. 181 , the plastic packaging material 1320 covers the lead frame 1310 before the laser step S1303 . It is worth mentioning that the plastic packaging material 1320 is not filled into the recessed portion 1314 .

Please refer to FIG. 182 and FIG. 183. FIG. 182 is a schematic diagram of the laser step S1303 in FIG. 177 in the thirteenth embodiment, and FIG. 183 is a cross-section of the lead frame 1310 in FIG. 182 in the thirteenth embodiment. Schematic cross-sectional view of line 183-183'. 182 and 183, the laser beam L removes the plastic packaging material 1320 covering an upper surface of the scribe line 1311 in the laser step S1303, wherein the plastic packaging material 1320 is only partially removed. It is worth mentioning that, because the laser beam L is irradiated on the upper surface of the scribe line 1311 to remove the plastic packaging material 1320 , the plastic packaging material 1320 disposed in the etching groove 1312 will not be irradiated by the laser beam L, so setting The plastic packaging material 1320 in the etching groove 1312 remains therein.

Please refer to Table 13 below. Table 13 is the parameters of the laser beam L used in the laser step S1303 in the thirteenth embodiment, but the parameters in Table 13 are not limited. Table 13 type Diode end-pumped Nd:YVO ₄ Output Power 10W to 40W wavelength 355nm, 532nm, 1064nm Pulse frequency 60 kHz to 200 kHz continuous-wave (CW)

Further, the object to be removed (such as part of the plastic packaging material 1320 ) and its depth can be selected through the laser step S1303 , and the laser step S1303 is not limited to one, but can also be more than two, which depends on the laser beam L energy and parameters. Thereby, the range of removal can be effectively controlled. Specifically, the laser step S1303 may consist of one or more laser beams L. For example, the multiple laser beams L can be rough processed by the laser beam L with a smaller wavelength (eg, 355 nm) first, and then the laser beam with a larger wavelength (eg, 532 nm or 1064 nm) can be used for rough processing. The light beam L is finely processed to achieve a finer removal effect, but is not limited thereto.

Please refer to FIG. 184 and FIG. 185. FIG. 184 shows a schematic diagram of the electroplating step S1304 in FIG. 177 in the thirteenth embodiment, and FIG. 185 shows the lead frame 1310 in FIG. 184 along the section line in the thirteenth embodiment. Schematic cross-section of 185-185'. As can be seen from FIG. 184 and FIG. 185 , the plurality of plated surfaces 1330 are disposed on the plurality of areas on the lead frame 1310 that are not covered by the plastic packaging material 1320 .

Please refer to FIG. 186 , FIG. 187 , and FIG. 188 . FIG. 186 shows the schematic diagram of the cutting step S1305 in the thirteenth embodiment in FIG. 177 , and FIG. 187 shows the package structure in FIG. 186 in the thirteenth embodiment. 1300 is a schematic cross-sectional view along the line 187-187', and FIG. 188 is a schematic cross-sectional view of the package structure 1300 in the thirteenth embodiment in FIG. 186 along the line 188-188'. As can be seen from FIGS. 186 to 188 , the cutting step S1305 is to cut the cutting lines 1311 of the lead frame 1310 to form the package structure 1300 . Specifically, the cutting path 1311 of the lead frame 1310 is cut by a knife, so the protruding pins 1313 are formed, and the plated surface 1330 is disposed on the outer periphery of the protruding pins 1313 . Furthermore, the width of the protruding pins 1313 is wider, so the generation of burrs can be reduced during the cutting step S1305.

Please refer to FIGS. 189 and 190. FIG. 189 is a schematic side view of the package structure 1300 in the thirteenth embodiment shown in FIG. 177, and FIG. 190 is a part of the package structure 1300 in the thirteenth embodiment in FIG. 177. Schematic. It can be seen from FIG. 189 and FIG. 190 that the package structure 1300 includes a plurality of protruding pins 1313 , the protruding pins 1313 protrude from the edge of the plastic packaging material 1320 , and each protruding pin 1313 includes eight electroplating surfaces 1330 and is close to the bottom of the package structure 1300 . The protruding pins 1313 on the surface protrude from the edge of the plastic packaging material 1320 .

Therefore, through the method S1300 for forming the package structure of the thirteenth embodiment, it is beneficial to increase the side solderable area of the package structure 1300 . Furthermore, as can be seen from FIG. 187 , because the protruding pins 1313 protrude from the plastic packaging material 1320 and the part covered by the plastic packaging material 1320 is similar to a gull-wing shape, the protruding pins 1313 have more mechanical strength. Therefore, the connection strength between the protruding pins 1313 and the circuit board can be improved, so as to maintain and increase the life of the protruding pins 1313 provided on the circuit board, and further improve the reliability of the board level.

To sum up, through the method for forming a package structure of the present invention, a package structure with ladder-shaped pins or protruding pins can be formed, and the structure can not only improve the solderability, but also increase the connection strength provided on the circuit board to improve the board-level reliability.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

S100, S200, S300, S400, S500, S600, S700, S800, S900, S1000, S1100, S1200, S1300: Forming Method of Package Structure S101, S201, S301, S401, S501, S601, S701, S801, S901, S1001, S1101, S1201, S1301: etching steps S102, S202, S302, S402, S502, S602, S702, S802, S902, S1002, S1102, S1202, S1302: Molding step S103, S903, S1003, S1103: The first laser step S104, S904, S1004, S1104: Second laser step S105, S204, S304, S404, S504, S604, S704, S804, S905, S1005, S1105, S1204, S1304: Electroplating steps S106, S205, S305, S405, S505, S605, S705, S805, S906, S1006, S1106, S1205, S1305: cutting steps S203, S303, S403, S503, S603, S703, S803, S1203, S1303: Laser step 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300: Package structure 110,210,310,410,510,610,710,810,910,1010,1110,1210,1310: Lead Frame 111, 211, 311, 411, 511, 611, 711, 811, 911, 1011, 1111, 1211, 1311: Cutting Road 112, 212, 312, 412, 512, 612, 712, 812, 912, 1012, 1112, 1212, 1312: Etching grooves 113, 213, 313, 413, 513, 613, 813: Ladder pins 713, 913, 1013, 1113, 1213, 1313: Protruding pins 120, 220, 320, 420, 520, 620, 720, 820, 920, 1020, 1120, 1220, 1320: plastic packaging materials 130, 230, 330, 430, 530, 630, 730, 830, 930, 1030, 1130, 1230, 1330: Electroplating surface 314,614,714,814,914,1014,1314: Recess L: laser beam L0: The width of the recessed portion d: thickness of lead frame

FIG. 1 is a schematic flowchart of a method for forming a package structure according to a first embodiment of the present invention; FIG. 2 is a schematic diagram illustrating the etching step in the first embodiment of FIG. 1; Fig. 3 is a schematic cross-sectional view of the lead frame along the section line 3-3' in the first embodiment of Fig. 2; FIG. 4 is a schematic diagram of the molding step in the first embodiment of FIG. 1; Fig. 5 is a schematic cross-sectional view of the lead frame along the section line 5-5' in the first embodiment of Fig. 4; FIG. 6 is a schematic diagram of the first laser step in the first embodiment of FIG. 1; FIG. 7 is a schematic cross-sectional view of the lead frame along the section line 7-7' in the first embodiment of FIG. 6; FIG. 8 is a schematic diagram of the second laser step in the first embodiment of FIG. 1; Fig. 9 is a schematic cross-sectional view of the lead frame along the section line 9-9' in the first embodiment of Fig. 8; FIG. 10 is a schematic diagram illustrating the electroplating step in the first embodiment of FIG. 1; FIG. 11 is a schematic cross-sectional view of the lead frame along the section line 11-11' in the first embodiment of FIG. 10; FIG. 12 is a schematic diagram illustrating the cutting step in the first embodiment of FIG. 1; FIG. 13 is a schematic cross-sectional view of the package structure in the first embodiment shown in FIG. 12 along the section line 13-13'; FIG. 14 is a schematic cross-sectional view of the package structure in the first embodiment shown in FIG. 12 along the section line 14-14'; FIG. 15 is a schematic side view of the package structure in the first embodiment of FIG. 1; FIG. 16 is a partial schematic diagram of the package structure in the first embodiment of FIG. 1; FIG. 17 is a schematic flowchart of a method for forming a package structure according to a second embodiment of the present invention; FIG. 18 is a schematic diagram illustrating the etching step in the second embodiment of FIG. 17; Fig. 19 is a schematic cross-sectional view of the lead frame along the section line 19-19' in the second embodiment of Fig. 18; Fig. 20 is a schematic diagram of the molding step in the second embodiment of Fig. 17; FIG. 21 is a schematic cross-sectional view of the lead frame along the section line 21-21' in the second embodiment of FIG. 20; FIG. 22 is a schematic diagram of the laser step in the second embodiment of FIG. 17; FIG. 23 is a schematic cross-sectional view of the lead frame along the section line 23-23' in the second embodiment of FIG. 22; FIG. 24 is a schematic diagram illustrating the electroplating step in the second embodiment of FIG. 17; FIG. 25 is a schematic cross-sectional view of the lead frame along the section line 25-25' in the second embodiment of FIG. 24; FIG. 26 is a schematic diagram illustrating the cutting step in the second embodiment of FIG. 17; FIG. 27 is a schematic cross-sectional view of the package structure in the second embodiment of FIG. 26 along the section line 27-27'; FIG. 28 is a schematic cross-sectional view of the package structure in the second embodiment of FIG. 26 along the section line 28-28'; FIG. 29 is a schematic side view of the package structure in the second embodiment of FIG. 17; FIG. 30 is a partial schematic diagram of the package structure in the second embodiment of FIG. 17; FIG. 31 is a schematic flowchart of a method for forming a package structure according to a third embodiment of the present invention; FIG. 32 is a schematic diagram illustrating the etching step in the third embodiment of FIG. 31; FIG. 33 is a schematic cross-sectional view of the lead frame along the section line 33-33' in the third embodiment of FIG. 32; Fig. 34 is a schematic diagram of the molding step in the third embodiment of Fig. 31; FIG. 35 is a schematic cross-sectional view of the lead frame along the section line 35-35' in the third embodiment of FIG. 34; FIG. 36 is a schematic diagram of the laser step in the third embodiment of FIG. 31; Fig. 37 is a schematic cross-sectional view of the lead frame along the section line 37-37' in the third embodiment of Fig. 36; FIG. 38 is a schematic diagram illustrating the electroplating step in the third embodiment of FIG. 31; Fig. 39 is a schematic cross-sectional view of the lead frame along the section line 39-39' in the third embodiment of Fig. 38; Fig. 40 is a schematic diagram showing the cutting step in the third embodiment of Fig. 31; FIG. 41 is a schematic cross-sectional view of the package structure in the third embodiment in FIG. 40 along the section line 41-41'; FIG. 42 is a schematic cross-sectional view of the package structure in the third embodiment of FIG. 40 along the section line 42-42'; FIG. 43 is a schematic side view of the package structure in the third embodiment of FIG. 31; FIG. 44 is a partial schematic diagram of the package structure in the third embodiment of FIG. 31; FIG. 45 is a schematic flowchart of a method for forming a package structure according to a fourth embodiment of the present invention; FIG. 46 is a schematic diagram illustrating the etching step in the fourth embodiment of FIG. 45; FIG. 47 is a schematic cross-sectional view of the lead frame along the section line 47-47' in the fourth embodiment of FIG. 46; Fig. 48 is a schematic diagram of the molding step in the fourth embodiment of Fig. 45; Fig. 49 is a schematic cross-sectional view of the lead frame along the section line 49-49' in the fourth embodiment of Fig. 48; FIG. 50 is a schematic diagram of a laser step in the fourth embodiment of FIG. 45; FIG. 51 is a schematic cross-sectional view of the lead frame along the section line 51-51' in the fourth embodiment of FIG. 50; FIG. 52 is a schematic diagram illustrating the electroplating step in the fourth embodiment of FIG. 45; FIG. 53 is a schematic cross-sectional view of the lead frame along the section line 53-53' in the fourth embodiment of FIG. 52; Fig. 54 is a schematic diagram of the cutting step in the fourth embodiment of Fig. 45; FIG. 55 is a schematic cross-sectional view of the package structure in the fourth embodiment of FIG. 54 along the section line 55-55'; FIG. 56 is a schematic cross-sectional view of the package structure in the fourth embodiment of FIG. 54 along the section line 56-56'; FIG. 57 is a schematic side view of the package structure in the fourth embodiment of FIG. 45; FIG. 58 is a partial schematic diagram of the package structure in the fourth embodiment of FIG. 45; FIG. 59 is a schematic flowchart of a method for forming a package structure according to a fifth embodiment of the present invention; FIG. 60 is a schematic diagram illustrating the etching step in the fifth embodiment of FIG. 59; FIG. 61 is a schematic cross-sectional view of the lead frame along the section line 61-61' in the fifth embodiment of FIG. 60; Fig. 62 is a schematic diagram of the molding step in the fifth embodiment of Fig. 59; FIG. 63 is a schematic cross-sectional view of the lead frame along the section line 63-63' in the fifth embodiment of FIG. 62; FIG. 64 is a schematic diagram of a laser step in the fifth embodiment of FIG. 59; FIG. 65 is a schematic cross-sectional view of the lead frame along the line 65-65' in the fifth embodiment of FIG. 64; FIG. 66 is a schematic diagram illustrating the electroplating step in the fifth embodiment of FIG. 59; FIG. 67 is a schematic cross-sectional view of the lead frame along the section line 67-67' in the fifth embodiment of FIG. 66; Fig. 68 is a schematic diagram of the cutting step in the fifth embodiment of Fig. 59; FIG. 69 is a schematic cross-sectional view of the package structure in the fifth embodiment shown in FIG. 68 along the section line 69-69'; FIG. 70 is a schematic cross-sectional view of the package structure in the fifth embodiment shown in FIG. 68 along the section line 70-70'; FIG. 71 is a schematic side view of the package structure in the fifth embodiment of FIG. 59; FIG. 72 is a partial schematic diagram of the package structure in the fifth embodiment of FIG. 59; FIG. 73 is a schematic flowchart of a method for forming a package structure according to a sixth embodiment of the present invention; FIG. 74 is a schematic diagram illustrating the etching step in the sixth embodiment of FIG. 73; FIG. 75 is a schematic cross-sectional view of the lead frame along the section line 75-75' in the sixth embodiment of FIG. 74; Fig. 76 is a schematic diagram of the molding step in the sixth embodiment of Fig. 73; FIG. 77 is a schematic cross-sectional view of the lead frame along the section line 77-77' in the sixth embodiment of FIG. 76; FIG. 78 is a schematic diagram illustrating a laser step in the sixth embodiment of FIG. 73; FIG. 79 is a schematic cross-sectional view of the lead frame along the section line 79-79' in the sixth embodiment of FIG. 78; Fig. 80 is a schematic diagram illustrating the electroplating step in the sixth embodiment of Fig. 73; FIG. 81 is a schematic cross-sectional view of the lead frame along the section line 81-81' in the sixth embodiment of FIG. 80; Fig. 82 is a schematic diagram of the cutting step in the sixth embodiment of Fig. 73; FIG. 83 is a schematic cross-sectional view of the package structure in the sixth embodiment shown in FIG. 82 along the section line 83-83'; FIG. 84 is a schematic cross-sectional view of the package structure in the sixth embodiment shown in FIG. 82 along the section line 84-84'; FIG. 85 is a schematic side view of the package structure in the sixth embodiment of FIG. 73; FIG. 86 is a partial schematic diagram of the package structure in the sixth embodiment of FIG. 73; FIG. 87 is a schematic flowchart of a method for forming a package structure according to a seventh embodiment of the present invention; FIG. 88 is a schematic diagram illustrating the etching step in the seventh embodiment of FIG. 87; Fig. 89 is a schematic cross-sectional view of the lead frame along the line 89-89' in the seventh embodiment of Fig. 88; Fig. 90 is a schematic diagram showing the molding step in the seventh embodiment of Fig. 87; FIG. 91 is a schematic cross-sectional view of the lead frame along the section line 91-91' in the seventh embodiment of FIG. 90; FIG. 92 is a schematic diagram of a laser step in the seventh embodiment of FIG. 87; Fig. 93 is a schematic cross-sectional view of the lead frame along the section line 93-93' in the seventh embodiment of Fig. 92; FIG. 94 is a schematic diagram illustrating the electroplating step in the seventh embodiment of FIG. 87; FIG. 95 is a schematic cross-sectional view of the lead frame along the section line 95-95' in the seventh embodiment of FIG. 94; Fig. 96 is a schematic diagram of the cutting step in the seventh embodiment of Fig. 87; FIG. 97 is a schematic cross-sectional view of the package structure in the seventh embodiment shown in FIG. 96 along the section line 97-97'; FIG. 98 is a schematic cross-sectional view of the package structure in the seventh embodiment shown in FIG. 96 along the section line 98-98'; FIG. 99 is a schematic side view of the package structure in the seventh embodiment shown in FIG. 87; FIG. 100 is a partial schematic diagram of the package structure in the seventh embodiment shown in FIG. 87; FIG. 101 is a schematic flowchart of a method for forming a package structure according to an eighth embodiment of the present invention; FIG. 102 is a schematic diagram illustrating the etching step in the eighth embodiment of FIG. 101; FIG. 103 is a schematic cross-sectional view of the lead frame along the section line 103-103' in the eighth embodiment of FIG. 102; Fig. 104 is a schematic diagram of the molding step in the eighth embodiment of Fig. 101; FIG. 105 is a schematic cross-sectional view of the lead frame along the section line 105-105' in the eighth embodiment of FIG. 104; FIG. 106 is a schematic diagram of the laser step in the eighth embodiment of FIG. 101; FIG. 107 is a schematic cross-sectional view of the lead frame along the section line 107-107' in the eighth embodiment of FIG. 106; Fig. 108 is a schematic diagram illustrating the electroplating step in the eighth embodiment of Fig. 101; FIG. 109 is a schematic cross-sectional view of the lead frame along the section line 109-109' in the eighth embodiment of FIG. 108; FIG. 110 is a schematic diagram of the cutting step in the eighth embodiment of FIG. 101; FIG. 111 is a schematic cross-sectional view of the package structure in the eighth embodiment shown in FIG. 110 along the section line 111-111'; FIG. 112 is a schematic cross-sectional view of the package structure in the eighth embodiment shown in FIG. 110 along the section line 112-112'; FIG. 113 is a schematic side view of the package structure in the eighth embodiment of FIG. 101; FIG. 114 is a partial schematic diagram of the package structure in the eighth embodiment of FIG. 101; FIG. 115 is a schematic flowchart of a method for forming a package structure according to a ninth embodiment of the present invention; FIG. 116 is a schematic diagram of the etching step in the ninth embodiment of FIG. 115; FIG. 117 is a schematic cross-sectional view of the lead frame along the line 117-117' in the ninth embodiment of FIG. 116; Fig. 118 is a schematic diagram of the molding step in the ninth embodiment of Fig. 115; FIG. 119 is a schematic cross-sectional view of the lead frame along the line 119-119' in the ninth embodiment of FIG. 118; Fig. 120 is a schematic diagram of the first laser step in the ninth embodiment of Fig. 115; FIG. 121 is a schematic cross-sectional view of the lead frame along the line 121-121' in the ninth embodiment of FIG. 120; FIG. 122 is a schematic diagram of the second laser step in the ninth embodiment of FIG. 115; FIG. 123 is a schematic cross-sectional view of the lead frame along the line 123-123' in the ninth embodiment of FIG. 122; FIG. 124 is a schematic diagram illustrating the electroplating step in the ninth embodiment of FIG. 115; FIG. 125 is a schematic cross-sectional view of the lead frame along the line 125-125' in the ninth embodiment of FIG. 124; Fig. 126 is a schematic diagram of the cutting step in the ninth embodiment of Fig. 115; FIG. 127 is a schematic cross-sectional view of the package structure in the ninth embodiment shown in FIG. 126 along the section line 127-127'; FIG. 128 is a schematic cross-sectional view of the package structure in the ninth embodiment shown in FIG. 126 along the section line 128-128'; FIG. 129 is a schematic side view of the package structure in the ninth embodiment of FIG. 115; FIG. 130 is a partial schematic diagram of the package structure in the ninth embodiment of FIG. 115; FIG. 131 is a schematic flowchart of a method for forming a package structure according to a tenth embodiment of the present invention; FIG. 132 is a schematic diagram illustrating the etching step in the tenth embodiment of FIG. 131; FIG. 133 is a schematic cross-sectional view of the lead frame in the tenth embodiment of FIG. 132 along the section line 133-133'; Fig. 134 is a schematic diagram of the molding step in the tenth embodiment of Fig. 131; FIG. 135 is a schematic cross-sectional view of the lead frame in the tenth embodiment of FIG. 134 along the section line 135-135'; FIG. 136 is a schematic diagram of the first laser step in the tenth embodiment of FIG. 131 ; FIG. 137 is a schematic cross-sectional view of the lead frame in the tenth embodiment of FIG. 136 along the section line 137-137'; FIG. 138 is a schematic diagram of the second laser step in the tenth embodiment of FIG. 131; FIG. 139 is a schematic cross-sectional view of the lead frame along the section line 139-139' in the tenth embodiment of FIG. 138; FIG. 140 is a schematic diagram of the electroplating step in the tenth embodiment of FIG. 131; FIG. 141 is a schematic cross-sectional view of the lead frame along the section line 141-141' in the tenth embodiment of FIG. 140; Fig. 142 is a schematic diagram of the cutting step in the tenth embodiment of Fig. 131; FIG. 143 is a schematic cross-sectional view of the package structure in the tenth embodiment in FIG. 142 along the section line 143-143'; FIG. 144 is a schematic cross-sectional view of the package structure in the tenth embodiment shown in FIG. 142 along the section line 144-144'; FIG. 145 is a schematic side view of the package structure in the tenth embodiment of FIG. 131; FIG. 146 is a partial schematic diagram of the package structure in the tenth embodiment of FIG. 131; FIG. 147 is a schematic flowchart of a method for forming a package structure according to an eleventh embodiment of the present invention; FIG. 148 is a schematic diagram of the etching step in the eleventh embodiment of FIG. 147; FIG. 149 is a schematic cross-sectional view of the lead frame along the section line 149-149' in the eleventh embodiment of FIG. 148; Fig. 150 is a schematic diagram of the molding step in the eleventh embodiment of Fig. 147; FIG. 151 is a schematic cross-sectional view of the lead frame along the section line 151-151' in the eleventh embodiment of FIG. 150; FIG. 152 is a schematic diagram of the first laser step in the eleventh embodiment of FIG. 147; FIG. 153 is a schematic cross-sectional view of the lead frame along the section line 153-153' in the eleventh embodiment of FIG. 152; FIG. 154 is a schematic diagram of the second laser step in the eleventh embodiment of FIG. 147; FIG. 155 is a schematic cross-sectional view of the lead frame along the line 155-155' in the eleventh embodiment of FIG. 154; FIG. 156 is a schematic diagram illustrating the electroplating step in the eleventh embodiment of FIG. 147; FIG. 157 is a schematic cross-sectional view of the lead frame along the line 157-157' in the eleventh embodiment of FIG. 156; Fig. 158 is a schematic diagram illustrating the cutting step in the eleventh embodiment of Fig. 147; FIG. 159 is a schematic cross-sectional view of the package structure in the eleventh embodiment shown in FIG. 158 along the section line 159-159'; FIG. 160 is a schematic cross-sectional view of the package structure in the eleventh embodiment shown in FIG. 158 along the section line 160-160'; FIG. 161 is a schematic side view of the package structure in the eleventh embodiment of FIG. 147; FIG. 162 is a partial schematic diagram of the package structure in the eleventh embodiment of FIG. 147; FIG. 163 is a schematic flowchart of a method for forming a package structure according to a twelfth embodiment of the present invention; FIG. 164 is a schematic diagram of the etching step in the twelfth embodiment of FIG. 163; FIG. 165 is a schematic cross-sectional view of the lead frame in the twelfth embodiment of FIG. 164 along the section line 165-165'; Fig. 166 is a schematic diagram of the molding step in the twelfth embodiment of Fig. 163; FIG. 167 is a schematic cross-sectional view of the lead frame in the twelfth embodiment of FIG. 166 along the section line 167-167'; FIG. 168 is a schematic diagram of the laser step in the twelfth embodiment of FIG. 163; Fig. 169 is a schematic cross-sectional view of the lead frame in the twelfth embodiment of Fig. 168 along the section line 169-169'; Fig. 170 is a schematic diagram of the electroplating step in the twelfth embodiment of Fig. 163; FIG. 171 is a schematic cross-sectional view of the lead frame in the twelfth embodiment of FIG. 170 along the section line 171-171'; Fig. 172 is a schematic diagram illustrating the cutting step in the twelfth embodiment of Fig. 163; FIG. 173 is a schematic cross-sectional view of the package structure in the twelfth embodiment of FIG. 172 along the section line 173-173'; FIG. 174 is a schematic cross-sectional view of the package structure in the twelfth embodiment shown in FIG. 172 along the section line 174-174'; FIG. 175 is a schematic side view of the package structure in the twelfth embodiment of FIG. 163; FIG. 176 is a partial schematic diagram of the package structure in the twelfth embodiment of FIG. 163; FIG. 177 is a schematic flowchart of a method for forming a package structure according to a thirteenth embodiment of the present invention; FIG. 178 is a schematic diagram of the etching step in the thirteenth embodiment of FIG. 177; Fig. 179 is a schematic cross-sectional view of the lead frame in the thirteenth embodiment of Fig. 178 along the section line 179-179'; Fig. 180 is a schematic diagram of a molding step in the thirteenth embodiment of Fig. 177; Fig. 181 is a schematic cross-sectional view of the lead frame in the thirteenth embodiment of Fig. 180 along the section line 181-181'; FIG. 182 is a schematic diagram of a laser step in the thirteenth embodiment of FIG. 177; Fig. 183 is a schematic cross-sectional view of the lead frame in the thirteenth embodiment of Fig. 182 along the section line 183-183'; Fig. 184 is a schematic diagram showing the electroplating step in the thirteenth embodiment of Fig. 177; FIG. 185 is a schematic cross-sectional view of the lead frame in the thirteenth embodiment of FIG. 184 along the section line 185-185'; Fig. 186 is a schematic diagram of the cutting step in the thirteenth embodiment of Fig. 177; FIG. 187 is a schematic cross-sectional view of the package structure in the thirteenth embodiment shown in FIG. 186 along the section line 187-187'; FIG. 188 is a schematic cross-sectional view of the package structure in the thirteenth embodiment shown in FIG. 186 along the section line 188-188'; FIG. 189 is a schematic side view of the package structure in the thirteenth embodiment of FIG. 177; and FIG. 190 is a partial schematic diagram of the package structure in the thirteenth embodiment of FIG. 177 .

S100: Forming method of package structure

S101: etching step

S102: Molding step

S103: The first laser step

S104: the second laser step

S105: Electroplating step

S106: Cutting step

Claims (9)

A method for forming a package structure, comprising: an etching step, wherein a plurality of scribe lines of a lead frame are etched; a laser step, wherein a laser beam is used to remove a plastic packaging material covering each of the scribe lines; a an electroplating step, wherein a plurality of electroplating surfaces are arranged on a plurality of areas on the lead frame that are not covered by the plastic packaging material; and a cutting step, wherein the cutting lines of the lead frame are cut to form a package structure; wherein, in the etching step An etch depth of the lead frame is less than or equal to half of a thickness of the lead frame. The method for forming a package structure according to claim 1, further comprising: a molding step, wherein the plastic packaging material covers the lead frame before the laser step. The method for forming a package structure as claimed in claim 1, wherein in the laser step, the laser beam removes a part of an upper surface of the scribe lines of the lead frame. The method for forming a package structure according to claim 1, wherein in the cutting step, the cutting tracks of the lead frame are cut by a cutter. The method for forming a package structure according to claim 4, wherein the cutting width of the tool is less than or equal to the etching width of the etching step. The method for forming a package structure according to claim 1, wherein the laser beam in the laser step is diode-pumped neodymium-doped yttrium vanadate, the output power is 10 watts to 40 watts, and the wavelength is 355 nanometers meter, 532 nm or 1064 nm, the pulse form is continuous wave, and the pulse frequency is 60 kHz to 200 kHz. The method for forming a package structure according to claim 1, wherein the laser step includes a first laser step and a second laser step, and the second laser step is performed after the first laser step. The method for forming a package structure as claimed in claim 7, wherein the first laser step is for the laser beam to remove the plastic packaging material covering an upper surface of each of the scribe lines. The method for forming a package structure according to claim 8, wherein the second laser step is for the laser beam to remove the plastic packaging material covering the lower surface of each of the scribe lines.

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