TWI757796B - Healing particle and method for thermoforming - Google Patents
Healing particle and method for thermoforming Download PDFInfo
- Publication number
- TWI757796B TWI757796B TW109123964A TW109123964A TWI757796B TW I757796 B TWI757796 B TW I757796B TW 109123964 A TW109123964 A TW 109123964A TW 109123964 A TW109123964 A TW 109123964A TW I757796 B TWI757796 B TW I757796B
- Authority
- TW
- Taiwan
- Prior art keywords
- repair
- conductive layer
- conductive
- cracks
- stack
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000003856 thermoforming Methods 0.000 title abstract description 6
- 230000035876 healing Effects 0.000 title abstract 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 79
- 230000008439 repair process Effects 0.000 claims description 59
- 239000004020 conductor Substances 0.000 claims description 38
- 238000010104 thermoplastic forming Methods 0.000 claims description 38
- 239000007788 liquid Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- -1 poly(urea-formaldehyde) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C51/00—Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor
- B29C51/10—Forming by pressure difference, e.g. vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C51/00—Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor
- B29C51/14—Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor using multilayered preforms or sheets
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/25—Design optimisation, verification or simulation using particle-based methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/08—Thermal analysis or thermal optimisation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Human Computer Interaction (AREA)
- Evolutionary Computation (AREA)
- Laminated Bodies (AREA)
Abstract
Description
本公開涉及熱塑成形的修復粒子和方法。The present disclosure relates to thermoforming repair particles and methods.
在非平面電子產品的製程中,形成曲面或任意形狀的非平面是重要的步驟,其中又以熱塑成形較適合應用於已承載導線或電子元件的電子產品。然而在熱塑成形的拉伸製程中,極易破壞基板上的導電材料造成斷線。在各種導電材料具有拉伸極限限制的情況下,需要新的開發方向以增加導電材料的拉伸能力和塑形可能性。In the manufacturing process of non-planar electronic products, forming a curved surface or a non-planar surface of any shape is an important step, and thermoplastic forming is more suitable for electronic products that already carry wires or electronic components. However, in the stretching process of thermoplastic forming, it is easy to damage the conductive material on the substrate and cause wire breakage. With various conductive materials having stretch limit limitations, new development directions are required to increase the stretchability and shapeability of conductive materials.
一種應用於熱塑成形的修復粒子,修復粒子包括內核和外殼,其中內核具有導電性和低於熱塑成形製程溫度的內核熔點,包覆內核的外殼則具有高於熱塑成形之製程溫度的外殼熔點,且外殼受力破裂後會釋出內核形成的導電液。A repair particle for thermoplastic forming, the repair particle includes an inner core and an outer shell, wherein the inner core has conductivity and a melting point of the inner core lower than the temperature of the thermoplastic forming process, and the outer shell covering the inner core has a temperature higher than the process temperature of the thermoplastic forming. The melting point of the outer shell, and the conductive liquid formed by the inner core will be released after the outer shell is ruptured by force.
一種應用於熱塑成形的疊層,包括基板、位於基板上的導電層、位於導電層上的保護層和添加於疊層中的複數個修復粒子,其中修復粒子包括內核和外殼,內核在熱塑成形中形成導電液,外殼在熱塑成形中破裂釋出導電液。A laminate for thermoplastic forming, comprising a substrate, a conductive layer on the substrate, a protective layer on the conductive layer, and a plurality of repair particles added to the laminate, wherein the repair particles include an inner core and an outer shell, and the inner core is heated The conductive liquid is formed during the plastic forming, and the casing is ruptured during the thermoplastic forming to release the conductive liquid.
一種熱塑成形的方法,包括在疊層中添加複數個修復粒子、加熱疊層使修復粒子的內核形成導電液、拉伸平直的疊層成曲形、使疊層的導電層形成複數個裂痕並且使修復粒子的外殼受力破裂、修復粒子釋出內核形成的導電液並填入裂痕,以及導電液形成複數個修復導體在裂痕中。A method of thermoplastic forming, comprising adding a plurality of repair particles in a laminate, heating the laminate to form a conductive liquid in the inner core of the repair particles, stretching the straight laminate into a curved shape, and forming a plurality of conductive layers in the laminate. The cracks and the outer shells of the repair particles are ruptured by force, the repair particles release the conductive fluid formed by the inner core and fill the cracks, and the conductive fluid forms a plurality of repair conductors in the cracks.
為了實現提及主題的不同特徵,以下公開內容提供了許多不同的實施例或示例。以下描述組件、材料、配置等等的具體示例以簡化本公開。當然,這些僅僅是示例,而不是限制性的。其他組件、材料、配置等等也在考慮中。例如,在以下的描述中,在第二特徵之上或上方形成第一特徵可以包括第一特徵和第二特徵以直接接觸形成的實施例,並且還可以包括在第一特徵和第二特徵之間形成附加特徵,使得第一特徵和第二特徵可以不直接接觸的實施例。另外,本公開可以在各種示例中重複參考數字和/或字母。此重複是為了簡單和清楚的目的,並且本身並不表示所談及的各種實施例和/或配置之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the mentioned subject matter. Specific examples of components, materials, configurations, etc. are described below to simplify the present disclosure. Of course, these are only examples and not limiting. Other components, materials, configurations, etc. are also under consideration. For example, in the following description, forming a first feature on or over a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include an embodiment between the first feature and the second feature Embodiments in which additional features are formed between them so that the first feature and the second feature may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for the purpose of simplicity and clarity, and does not in itself represent a relationship between the various embodiments and/or configurations discussed.
此外,本文可以使用空間相對術語,諸如「在…下面」、「在…下方」、「偏低」、「在…上面」、「偏上」等,以便於描述一個元件或特徵與如圖所示的另一個元件或特徵的關係。除了圖中所示的取向之外,空間相對術語旨在包括使用或操作中的裝置的不同取向。裝置可以以其他方式定向(旋轉90度或在其他方向上),並且同樣可以相應地解釋在此使用的空間相對描述符號。Furthermore, spatially relative terms, such as "below", "below", "lower", "above", "above", etc., may be used herein to facilitate describing an element or feature as relationship to another element or feature shown. In addition to the orientation shown in the figures, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
本公開揭露一種修復粒子,可應用於包括熱塑成形的塑形製程,例如模內成形(In-Mold Forming,IMF)、模內電子(In-Mold Electron,IME)等。在熱塑成形製程中加熱並拉伸具有導線之基板,例如可撓式或曲形觸控面板的觸控層。後續將以熱塑成形的實施例進行說明,然而應理解,含有加熱並拉伸的其他變化製程也在本公開的範圍內。The present disclosure discloses a repair particle, which can be applied to a molding process including thermoplastic forming, such as In-Mold Forming (IMF), In-Mold Electron (IME), and the like. Substrates with wires, such as touch layers of flexible or curved touch panels, are heated and stretched in a thermoplastic forming process. Thermoforming examples will be described below, however it should be understood that other variations involving heating and stretching are within the scope of the present disclosure.
本公開揭露一種具有低熔點內核的修復粒子,並將修復粒子添加到具有導電層的疊層中。當導電層在熱塑成形中因每個部份受力不同而產生程度不一的裂痕時,修復粒子同時釋出內核形成的導電液。導電液在導電層的裂痕中形成穩定導體,降低導電層原先因受損而升高的電阻值,以解決熱塑成形造成的斷線問題。The present disclosure discloses a repair particle with a low melting point core, and the repair particle is added to a stack having a conductive layer. When the conductive layer has different degrees of cracks due to different forces on each part during the thermoplastic forming, the repair particles release the conductive liquid formed by the inner core at the same time. The conductive liquid forms a stable conductor in the cracks of the conductive layer, and reduces the resistance value of the conductive layer that was originally increased due to damage, so as to solve the problem of wire breakage caused by thermoplastic forming.
根據一些實施例,第1A圖至第1C圖是熱塑成形裝置在X-Z平面的截面圖。為繪示清楚的目的,第1A圖至第1C圖僅繪示簡化後的熱塑成形裝置。因此,在本公開的範圍內,熱塑成形裝置可包括未繪示於圖示中的額外部件。熱塑成型的步驟包括加熱、拉伸、冷卻,分別繪示於第1A圖至第1C圖中。包括加熱、拉伸、冷卻以外步驟的熱塑成形,也在本公開的範圍內。Figures 1A-1C are cross-sectional views of a thermoplastic forming apparatus in the X-Z plane, according to some embodiments. For the purpose of clarity of illustration, FIGS. 1A to 1C only illustrate a simplified thermoplastic forming apparatus. Accordingly, within the scope of the present disclosure, the thermoplastic forming apparatus may include additional components not shown in the figures. The steps of thermoplastic forming include heating, stretching, and cooling, which are shown in Figures 1A to 1C, respectively. Thermoforming, including steps other than heating, stretching, and cooling, is also within the scope of this disclosure.
根據一些實施例,第1A圖是熱塑成形裝置在加熱步驟的截面圖。疊層100在模具110上,且加熱器120在疊層100上並覆蓋疊層100。疊層100包括基板、導電層和保護層形成的疊層,並可包括其他材料層或電子元件在其中或其上。模具110用於拉伸製程中,可包括疊層100經熱塑成形後的任意形狀。加熱器120可將疊層100加熱至製程溫度使基板軟化,軟化程度足以在後續製程中將基板拉伸塑形成預期的形狀。Figure 1A is a cross-sectional view of a thermoplastic forming apparatus during a heating step, according to some embodiments. The
根據一些實施例,第1B圖是熱塑成形裝置在拉伸步驟,且疊層100正拉伸變形的截面圖。在一些實施例中,加熱器120可具有進氣孔H,使乾淨乾燥空氣(Clean Dry Air,CDA)A可穿過進氣孔H並加壓在模具110中的疊層100上,如第1B圖所繪示。在模具110中已軟化的疊層100受到乾淨乾燥空氣A的加壓而逐漸拉伸變形,使原本平直的疊層100拉伸成曲形,最終疊層100貼合模具110的上表面。在一些實施例中,加熱器120為不具有進氣孔H的壓板,且模具110的底部可具有穿透模具110的抽氣孔,抽氣孔可抽取疊層100和模具110之間的空氣,使疊層100在拉伸步驟是受到真空吸引而拉伸貼合模具110的上表面。在一些實施例中,加熱器120可具有進氣孔H,且模具110的底部可具有穿透模具110的抽氣孔,使疊層100同時受到乾淨乾燥空氣A的加壓和真空吸引而拉伸貼合模具110的上表面。FIG. 1B is a cross-sectional view of a thermoplastic forming apparatus during a stretching step and the
根據一些實施例,第1C圖是熱塑成形裝置在冷卻步驟的截面圖。疊層100貼合模具110的上表面,並逐漸冷卻到非軟化溫度,使疊層100脫離模具110時具有拉伸後形狀。Figure 1C is a cross-sectional view of a thermoplastic forming apparatus during a cooling step, according to some embodiments. The
根據一些實施例,第2圖是第1B圖中區域R在X-Y平面的俯視放大圖。為清楚繪示的目的,第2圖僅繪示疊層100中的導電材料104,然而如上述,疊層100可包括基板、保護層、其他材料層、電子元件等。在拉伸步驟中,基板拉伸變形對導電材料具有破壞力,使疊層100中的導電材料104可產生裂痕200。裂痕200可為不規則形狀並多為狹長型,裂痕200的長邊方向約垂直於疊層100拉伸變形的方向。裂痕200可出現在導電材料104之中,亦可出現在導電材料104的邊緣。裂痕200可使疊層100電阻值上升、產生斷線現象。According to some embodiments, FIG. 2 is an enlarged top view of the region R in the X-Y plane of FIG. 1B . For the purpose of clarity of illustration, FIG. 2 only shows the
為克服導電材料在熱塑成形拉伸過程中產生裂痕並斷線之現象,本公開提供一種修復粒子,並將修復粒子添加於包括導電材料的疊層之中,使導電材料在拉伸過程中受損的同時,修復粒子可修補導電材料中的裂痕,降低拉伸造成的電阻差異和元件驅動問題。In order to overcome the phenomenon that the conductive material is cracked and broken during the thermoplastic forming and stretching process, the present disclosure provides a repair particle, and the repair particle is added to the stack including the conductive material, so that the conductive material can be stretched during the stretching process. While damaged, the repair particles repair cracks in the conductive material, reducing resistance differences and component drive issues caused by stretching.
根據一些實施例,第3圖是疊層300在X-Z平面的截面圖。疊層300的組成類似於疊層100,包括但不限於基板、導電材料、保護層、其他材料層、電子元件等,且疊層300也可用於如第1A圖至第1C圖所繪示的熱塑拉伸製程中。在一些實施例中,平直的疊層300經過第1B圖中所示拉伸製程後為曲形,使疊層300可成為曲形或可撓式觸控面板的觸控層。Figure 3 is a cross-sectional view of the
在一些實施例中,疊層300包括基板302、在基板302上的導電層304和保護層306。基板302的材料可以是塑膠薄膜(例如聚碳酸酯(Polycarbonate,PC)薄膜)。基板302的熔點(例如,大於200℃)高於熱塑成形中加熱步驟的製程溫度(例如,145℃),但在製程溫度下,基板302可軟化以進行後續拉伸塑形。導電層304的材料可以是銀膠(silver paste)、奈米銀、聚二氧乙基噻吩與聚苯乙烯磺酸的複合物(PEDOT:PSS)等導電材料,導電材料的熔點可選擇在熱塑成形的製程溫度中不會形成熔融態,例如當製程溫度為145℃時,可選用銀膠(熔點為960℃)、奈米銀(熔點為150℃)等。保護層306的材料可以是氧化物,並覆蓋保護層306下方的導電層304。In some embodiments,
和疊層100不同的地方是,疊層300添加了修復粒子400在導電層304中。在一些實施例中,修復粒子400添加於導電層304的溶液中,並一同塗佈於基板302上形成疊層300的導電層304,如第3圖所繪示。Unlike
根據一些實施例,第4圖是導電粒子400的截面圖。修復粒子400為球狀雙層結構,包括內核402和外殼404。在一些實施例中,修復粒子400的直徑W可為1微米至5微米,然而也可使用更大或更小的直徑W。FIG. 4 is a cross-sectional view of
修復粒子400的內核402是導電材料,同時亦為修補導電層304中裂痕的主成分。在一些實施例中,內核402具有在熱塑成形的加熱步驟形成可流動態的特性。可選擇內核402的熔點介於熱塑成形的製程溫度和室溫之間,使內核402在拉伸步驟處於熔融態。熔融的內核402形成之導電液在導電層304拉伸受力的過程中,可同時填補拉伸造成的裂痕,使導電層304因受損而升高的電阻值下降,以達到修補導電層304的目的。The
在一些實施例中,熔融態的內核402在熱塑成形的冷卻步驟,可於室溫中形成固體,並成為連接導電層304裂痕處的穩定導體。在其他的一些實施例中,內核402熔點可低於室溫,在修補導電層304之後,內核402的導電液在熱塑成形冷卻步驟可形成氧化層於流體表面,限制內核402流體的流動行為,以形成導電層304裂痕中的穩定導體。在一些實施例中,內核402的材料包括鎵(熔點為29.76℃)、鎵銦合金(共熔點為21.4℃)或錫鉍合金(共熔點為139℃)。In some embodiments, the
在一些實施例中,內核402可包括溶於有機溶劑(例如,甲苯)中的碳黑。包括碳黑的內核402在熱塑成形的拉伸步驟具有可流動的特性,填補導電層304中的裂痕,並透過乾燥去除有機溶劑,使內核402中的碳黑在裂痕中形成穩定連接的導電固體。In some embodiments, the
修復粒子400的外殼404是保持修復粒子400分散的材料層。在一些實施例中,內核402在熱塑成形的加熱步驟會形成或維持導電液狀態,但在導電層304由於拉伸而產生裂痕之前,外殼404可保護內核402並隔離內核402的導電液與導電層304。當導電層304在拉伸步驟產生裂痕時,外殼404也受到拉伸的應力而破裂,使內核402形成的導電液釋出並修補導電層304。在一些實施例中,為避免外殼404在導電層304拉伸斷裂之前,提早破裂而提早釋出內核402,外殼404可包括耐熱性和耐溶劑性,使外殼404在製程溫度不會融化或產生化學反應,其中溶劑為塗佈導電層304溶液的溶劑(例如,水、乙醇、乙醚、異丙醇、二乙二醇單丁醚等)。在一些實施例中,外殼404包括有機高分子(例如聚尿素甲醛樹脂(poly(urea-formaldehyde),PUF))或金屬氧化物(例如,二氧化錫、氧化鎵)。The
根據上述的一些實施例,修復粒子400添加於導電層304中,當疊層300加熱到製程溫度時,修復粒子400的內核402為導電液的型態並透過外殼404與導電層304分隔。當導電層304拉伸塑型而產生斷裂程度不一的裂痕時,在裂痕周圍修復粒子400的外殼404也一同破裂,釋出的內核402之導電液填補導電層304中的裂痕。當疊層300冷卻時,裂痕中內核402的導電液也形成穩定導體,連接導電層304中的裂痕,降低原本因導電層304受損而上升的電阻值。在一些實施例中,以導電層304和修復粒子400的體積為分母時,修復粒子400的添加量在10vol%至30vol%時具有修復效果。According to some of the above embodiments, the repairing
參考第3圖和第5圖,其中第5圖繪示疊層300在第1B圖的拉伸步驟中,區域R之導電層304在X-Y平面的俯視放大圖。在拉伸步驟中,因製程溫度而軟化的基板302拉伸變形,導致基板302上的導電層304隨之變形並產生裂痕500。同時,在導電層304中裂痕500周圍的修復粒子400之外殼404受到拉伸應力而破裂,釋出內核402形成的導電液。內核402形成的導電液在導電層304中的裂痕500形成修復導體402′,並在後續製程中固化形成裂痕500中的穩定導體。在一些實施例中,修復導體402′填補導電層304的裂痕500可為完全填充。在一些實施例中,修復導體402′填補導電層304的裂痕500,可為修復導體402′接觸到裂痕兩側相對的部分側壁。在一些實施例中,裂痕500中可具有複數個修復導體402′。Referring to FIGS. 3 and 5, FIG. 5 shows an enlarged top view of the
根據一些實施例,第6圖至第8圖是疊層600、疊層700和疊層800在X-Z平面的截面圖。疊層600至疊層800的組成類似於含有修復粒子400的疊層300,包括但不限於基板、導電材料、保護層、其他材料層、電子元件等,且疊層600至疊層800也可用於如第1A圖至第1C圖所繪示的熱塑拉伸製程中。6-8 are cross-sectional views of
疊層600至疊層800與疊層300不同的地方是,修復粒子400添加於疊層中不同的位置。在一些實施例中,如第6圖所示,修復粒子400可添加於保護層606的溶液中,並一同塗佈於導電層604上形成疊層600的保護層606。在一些實施例中,如第7圖所示,修復粒子400可添加於溶劑中,並塗佈在基板702上以形成導電層704下的粒子層708,其中溶劑可為水或有機溶劑(例如,乙醇、乙醚)。在一些實施例中,如第8圖所示,修復粒子400可添加於溶劑中,並塗佈在導電層804上以形成導電層804上的粒子層808,其中溶劑可為水或有機溶劑(例如,乙醇、乙醚)。儘管修復粒子400的添加位置不同,疊層600至疊層800中修復粒子400修補導電層中裂痕的方式和疊層300是相同的。
本公開揭露一種應用於熱塑成形的修復粒子,修復粒子包括內核和外殼,其中內核具有導電性和低於熱塑成形製程溫度的內核熔點,外殼受力破裂後會釋出內核形成的導電液。本公開亦揭露一種熱塑成形的方法,包括在疊層中添加複數個修復粒子,修復粒子在熱塑成形的拉伸製程中因外殼受力而釋出內核形成的導電液,導電液填入導電層中的裂痕並形成修復導體在裂痕中,降低導電層因裂痕產生而升高的電阻值,提升導電材料的拉伸能力。The present disclosure discloses a repair particle for thermoplastic forming. The repair particle includes a core and a shell, wherein the core has conductivity and a melting point of the core lower than the temperature of the thermoplastic forming process. . The present disclosure also discloses a method of thermoplastic forming, which includes adding a plurality of repairing particles in a laminate, the repairing particles release a conductive liquid formed by an inner core due to the force of the outer shell during the stretching process of the thermoplastic forming, and the conductive liquid is filled into Cracks in the conductive layer are formed and repaired conductors are formed. In the cracks, the resistance value raised by the conductive layer due to cracks is reduced, and the tensile ability of the conductive material is improved.
前面概述一些實施例的特徵,使得本領域技術人員可更好地理解本公開的觀點。本領域技術人員應該理解,他們可以容易地使用本公開作為設計或修改其他製程和結構的基礎,以實現相同的目的和/或實現與本文介紹之實施例相同的優點。本領域技術人員還應該理解,這樣的等同構造不脫離本公開的精神和範圍,並且在不脫離本公開的精神和範圍的情況下,可以進行各種改變、替換和變更。The foregoing outlines the features of some embodiments so that those skilled in the art may better understand the concepts of the disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. It should also be understood by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the present disclosure.
100:疊層
104:導電層
110:模具
120:加熱器
200,500:裂痕
300,600,700,800:疊層
302,602,702,802:基板
304,604,704,804:導電層
306,606,706,806:保護層
400:修復粒子
402:內核
404:外殼
402′:修復導體
708,808:粒子層
A:乾淨乾燥空氣
H:進氣孔
R:區域
W:直徑
X,Y,Z:軸
100: Laminate
104: Conductive layer
110: Mold
120: Heater
200,500: Rift
300,600,700,800: Laminate
302,602,702,802: Substrates
304,604,704,804: Conductive layer
306,606,706,806: Protective Layer
400: Fix Particles
402: Kernel
404:
當結合附圖閱讀時,從以下詳細描述中可以最好地理解本公開的各方面。應注意,根據工業中的標準方法,各種特徵未按比例繪製。實際上,為了清楚地談及,可任意增加或減少各種特徵的尺寸。 第1A圖至第1C圖根據一些實施例,繪示在熱塑成形製程各步驟中,熱塑成形設備的截面圖。 第2圖根據一些實施例,繪示在拉伸製程中導電材料的俯視圖。 第3圖根據一些實施例,繪示添加修復粒子於導電層中的疊層截面圖。 第4圖根據一些實施例,繪示修復粒子的截面圖。 第5圖根據一些實施例,繪示在拉伸製程中,添加修復粒子之導電材料的俯視圖。 第6圖至第8圖根據一些實施例,繪示添加修復粒子於導電層以外之材料層的疊層截面圖。 Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard methods in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of reference. FIGS. 1A-1C illustrate cross-sectional views of a thermoplastic forming apparatus during various steps of the thermoplastic forming process, according to some embodiments. FIG. 2 illustrates a top view of a conductive material during a stretching process, according to some embodiments. FIG. 3 is a cross-sectional view of a stack of adding repair particles to a conductive layer, according to some embodiments. FIG. 4 illustrates a cross-sectional view of a repair particle, according to some embodiments. FIG. 5 is a top view of a conductive material to which repair particles are added during a stretching process, according to some embodiments. FIGS. 6 to 8 illustrate stacked cross-sectional views of material layers other than the conductive layer with repair particles added, according to some embodiments.
300:疊層 302:基板 304:導電層 306:保護層 400:修復粒子 X,Z:軸 300: Laminate 302: Substrate 304: Conductive layer 306: Protective Layer 400: Fix Particles X, Z: axis
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010663326.8 | 2020-07-10 | ||
CN202010663326.8A CN111813263B (en) | 2020-07-10 | 2020-07-10 | Thermoformed repair particles and method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202203253A TW202203253A (en) | 2022-01-16 |
TWI757796B true TWI757796B (en) | 2022-03-11 |
Family
ID=72843489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109123964A TWI757796B (en) | 2020-07-10 | 2020-07-15 | Healing particle and method for thermoforming |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111813263B (en) |
TW (1) | TWI757796B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110109569B (en) * | 2019-05-07 | 2022-04-15 | 业成科技(成都)有限公司 | Touch structure, preparation method thereof and touch device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200641914A (en) * | 2005-03-24 | 2006-12-01 | Nippon Catalytic Chem Ind | Coated fine particle and their manufacturing method, and conductive fine particle |
TW201017499A (en) * | 2008-10-27 | 2010-05-01 | Tpk Touch Solutions Inc | Manufacturing method and structure of curved-surface capacitive touch panel |
EP2624258A1 (en) * | 2012-02-06 | 2013-08-07 | Siemens Aktiengesellschaft | Self-healing isolating layer for an electric machine |
TWM488681U (en) * | 2013-09-13 | 2014-10-21 | Tpk Touch Solutions Xiamen Inc | Touch panel |
CN106486183A (en) * | 2015-08-31 | 2017-03-08 | 三星电子株式会社 | Anisotropic conductive material and the electronic installation including it |
TW201727671A (en) * | 2015-09-28 | 2017-08-01 | 薩比克全球科技公司 | Integrated transparent conductive films for thermal forming applications |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6518330B2 (en) * | 2001-02-13 | 2003-02-11 | Board Of Trustees Of University Of Illinois | Multifunctional autonomically healing composite material |
JP4760076B2 (en) * | 2004-03-22 | 2011-08-31 | 住友化学株式会社 | Thermoplastic resin-coated conductive composition |
JP4950451B2 (en) * | 2005-07-29 | 2012-06-13 | 積水化学工業株式会社 | Conductive fine particles, anisotropic conductive material, and connection structure |
US20070063347A1 (en) * | 2005-09-19 | 2007-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packages, anisotropic conductive films, and conductive particles utilized therein |
JP5340686B2 (en) * | 2008-09-30 | 2013-11-13 | 株式会社日本触媒 | Polymer fine particles, method for producing polymer fine particles, and conductive fine particles |
KR20120103023A (en) * | 2011-03-09 | 2012-09-19 | 삼성전기주식회사 | Touch screen panel |
DE202012012729U1 (en) * | 2012-12-04 | 2013-10-01 | Sartorius Stedim Biotech Gmbh | Device for flow measurement in hose and / or plastic pipe systems and flow measurement arrangement |
WO2017011029A1 (en) * | 2015-07-14 | 2017-01-19 | Iowa State University Research Foundation, Inc. | Stable undercooled metallic particles for engineering at ambient conditions |
CN106782758B (en) * | 2017-01-05 | 2018-09-25 | 京东方科技集团股份有限公司 | Conducting particles and its manufacturing method and anisotropy conductiving glue |
US20200219634A1 (en) * | 2017-01-19 | 2020-07-09 | Centre National De La Recherche Scientifique | Method for preparation an electrically conductive stratified composite structure |
US11232241B2 (en) * | 2018-07-16 | 2022-01-25 | Uchicago Argonne, Llc | Systems and methods for designing new materials for superlubricity |
CN109448889A (en) * | 2018-12-05 | 2019-03-08 | 业成科技(成都)有限公司 | Selfreparing conductive structure and preparation method thereof |
JP7279510B2 (en) * | 2018-12-06 | 2023-05-23 | 東洋インキScホールディングス株式会社 | Conductive composition for molded film, molded film and method for producing same, molded article and method for producing same |
-
2020
- 2020-07-10 CN CN202010663326.8A patent/CN111813263B/en active Active
- 2020-07-15 TW TW109123964A patent/TWI757796B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200641914A (en) * | 2005-03-24 | 2006-12-01 | Nippon Catalytic Chem Ind | Coated fine particle and their manufacturing method, and conductive fine particle |
TW201017499A (en) * | 2008-10-27 | 2010-05-01 | Tpk Touch Solutions Inc | Manufacturing method and structure of curved-surface capacitive touch panel |
EP2624258A1 (en) * | 2012-02-06 | 2013-08-07 | Siemens Aktiengesellschaft | Self-healing isolating layer for an electric machine |
TWM488681U (en) * | 2013-09-13 | 2014-10-21 | Tpk Touch Solutions Xiamen Inc | Touch panel |
CN106486183A (en) * | 2015-08-31 | 2017-03-08 | 三星电子株式会社 | Anisotropic conductive material and the electronic installation including it |
TW201727671A (en) * | 2015-09-28 | 2017-08-01 | 薩比克全球科技公司 | Integrated transparent conductive films for thermal forming applications |
Also Published As
Publication number | Publication date |
---|---|
CN111813263A (en) | 2020-10-23 |
TW202203253A (en) | 2022-01-16 |
CN111813263B (en) | 2022-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6744442B2 (en) | Anisotropic conductive film, connection structure, and method for manufacturing connection structure | |
JP6274836B2 (en) | Anisotropic conductive film and electronic device | |
KR102429873B1 (en) | Anisotropic conductive material, electronic device including anisotropic conductive material and method of manufacturing electronic device | |
TWI462244B (en) | Anisotropic conductive film and fabrication method thereof | |
Guymon et al. | Multifunctional liquid metal polymer composites | |
US20160343592A1 (en) | Flip chip module with enhanced properties | |
TWI757796B (en) | Healing particle and method for thermoforming | |
TWI618205B (en) | Chip on film package and heat dissipation method thereof | |
KR101993813B1 (en) | Room temperature liquid metal capsule ink, method of manufacturing the same, and room temperature liquid metal capsule conductive wire formed by the same | |
US9852918B2 (en) | Embedding additive particles in encapsulant of electronic device | |
CN107360695A (en) | Radiator structure and preparation method thereof | |
WO2014190689A1 (en) | Printing plate, scattering film layer and manufacturing methods thereof, and display device | |
US10508225B2 (en) | Conductive particle, its manufacturing method and anisotropic conductive adhesive | |
TW202412119A (en) | Chip packaging structure and preparation method | |
KR101148143B1 (en) | Insulated conductive particles and anisotropic conductive film composition using the same | |
KR101096677B1 (en) | Anisotropic conductive adhesive, method for forming nana conductive pattern and method for packaging electronic parts using the same | |
CN108281398A (en) | Semiconductor package assembly and a manufacturing method thereof | |
CN100369245C (en) | Wafer radiating element | |
CN215496682U (en) | Semiconductor package | |
KR20100130260A (en) | Method for filling via hall and method of fabricating semiconductor package | |
KR101043956B1 (en) | anisotropic particle-arranged structure and manufacturing method of the same | |
CN105470153A (en) | Wafer bonding method | |
TW202228356A (en) | Battery control board | |
KR101030949B1 (en) | Cavity Epoxi Solder Ball and Semiconduct Package having the same | |
CN105744812A (en) | Heat radiating assembly and mobile terminal |