TWI757796B - Healing particle and method for thermoforming - Google Patents

Healing particle and method for thermoforming Download PDF

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TWI757796B
TWI757796B TW109123964A TW109123964A TWI757796B TW I757796 B TWI757796 B TW I757796B TW 109123964 A TW109123964 A TW 109123964A TW 109123964 A TW109123964 A TW 109123964A TW I757796 B TWI757796 B TW I757796B
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repair
conductive layer
conductive
cracks
stack
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TW202203253A (en
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許雅筑
林柏青
李嘉甄
余蕙均
蕭靖平
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大陸商業成科技(成都)有限公司
大陸商業成光電(深圳)有限公司
英特盛科技股份有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C51/00Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor
    • B29C51/10Forming by pressure difference, e.g. vacuum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C51/00Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor
    • B29C51/14Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor using multilayered preforms or sheets
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/20Design optimisation, verification or simulation
    • G06F30/25Design optimisation, verification or simulation using particle-based methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/485Adaptation of interconnections, e.g. engineering charges, repair techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/08Thermal analysis or thermal optimisation
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • General Physics & Mathematics (AREA)
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Abstract

A method for thermoforming includes adding a plurality of healing particles into a stack, heating the stack to transform a core of the healing particle into a conductive fluid, stretching the stack that forms a plurality of cracks in a conductive layer of the stack and brakes a shell of the healing particle, releasing the conductive fluid formed of the core from the healing particle which fills the cracks, and forming a plurality of conductive connections by the conductive fluid in the cracks.

Description

熱塑成形的修復粒子及方法Thermoforming repair particles and method

本公開涉及熱塑成形的修復粒子和方法。The present disclosure relates to thermoforming repair particles and methods.

在非平面電子產品的製程中,形成曲面或任意形狀的非平面是重要的步驟,其中又以熱塑成形較適合應用於已承載導線或電子元件的電子產品。然而在熱塑成形的拉伸製程中,極易破壞基板上的導電材料造成斷線。在各種導電材料具有拉伸極限限制的情況下,需要新的開發方向以增加導電材料的拉伸能力和塑形可能性。In the manufacturing process of non-planar electronic products, forming a curved surface or a non-planar surface of any shape is an important step, and thermoplastic forming is more suitable for electronic products that already carry wires or electronic components. However, in the stretching process of thermoplastic forming, it is easy to damage the conductive material on the substrate and cause wire breakage. With various conductive materials having stretch limit limitations, new development directions are required to increase the stretchability and shapeability of conductive materials.

一種應用於熱塑成形的修復粒子,修復粒子包括內核和外殼,其中內核具有導電性和低於熱塑成形製程溫度的內核熔點,包覆內核的外殼則具有高於熱塑成形之製程溫度的外殼熔點,且外殼受力破裂後會釋出內核形成的導電液。A repair particle for thermoplastic forming, the repair particle includes an inner core and an outer shell, wherein the inner core has conductivity and a melting point of the inner core lower than the temperature of the thermoplastic forming process, and the outer shell covering the inner core has a temperature higher than the process temperature of the thermoplastic forming. The melting point of the outer shell, and the conductive liquid formed by the inner core will be released after the outer shell is ruptured by force.

一種應用於熱塑成形的疊層,包括基板、位於基板上的導電層、位於導電層上的保護層和添加於疊層中的複數個修復粒子,其中修復粒子包括內核和外殼,內核在熱塑成形中形成導電液,外殼在熱塑成形中破裂釋出導電液。A laminate for thermoplastic forming, comprising a substrate, a conductive layer on the substrate, a protective layer on the conductive layer, and a plurality of repair particles added to the laminate, wherein the repair particles include an inner core and an outer shell, and the inner core is heated The conductive liquid is formed during the plastic forming, and the casing is ruptured during the thermoplastic forming to release the conductive liquid.

一種熱塑成形的方法,包括在疊層中添加複數個修復粒子、加熱疊層使修復粒子的內核形成導電液、拉伸平直的疊層成曲形、使疊層的導電層形成複數個裂痕並且使修復粒子的外殼受力破裂、修復粒子釋出內核形成的導電液並填入裂痕,以及導電液形成複數個修復導體在裂痕中。A method of thermoplastic forming, comprising adding a plurality of repair particles in a laminate, heating the laminate to form a conductive liquid in the inner core of the repair particles, stretching the straight laminate into a curved shape, and forming a plurality of conductive layers in the laminate. The cracks and the outer shells of the repair particles are ruptured by force, the repair particles release the conductive fluid formed by the inner core and fill the cracks, and the conductive fluid forms a plurality of repair conductors in the cracks.

為了實現提及主題的不同特徵,以下公開內容提供了許多不同的實施例或示例。以下描述組件、材料、配置等等的具體示例以簡化本公開。當然,這些僅僅是示例,而不是限制性的。其他組件、材料、配置等等也在考慮中。例如,在以下的描述中,在第二特徵之上或上方形成第一特徵可以包括第一特徵和第二特徵以直接接觸形成的實施例,並且還可以包括在第一特徵和第二特徵之間形成附加特徵,使得第一特徵和第二特徵可以不直接接觸的實施例。另外,本公開可以在各種示例中重複參考數字和/或字母。此重複是為了簡單和清楚的目的,並且本身並不表示所談及的各種實施例和/或配置之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the mentioned subject matter. Specific examples of components, materials, configurations, etc. are described below to simplify the present disclosure. Of course, these are only examples and not limiting. Other components, materials, configurations, etc. are also under consideration. For example, in the following description, forming a first feature on or over a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include an embodiment between the first feature and the second feature Embodiments in which additional features are formed between them so that the first feature and the second feature may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for the purpose of simplicity and clarity, and does not in itself represent a relationship between the various embodiments and/or configurations discussed.

此外,本文可以使用空間相對術語,諸如「在…下面」、「在…下方」、「偏低」、「在…上面」、「偏上」等,以便於描述一個元件或特徵與如圖所示的另一個元件或特徵的關係。除了圖中所示的取向之外,空間相對術語旨在包括使用或操作中的裝置的不同取向。裝置可以以其他方式定向(旋轉90度或在其他方向上),並且同樣可以相應地解釋在此使用的空間相對描述符號。Furthermore, spatially relative terms, such as "below", "below", "lower", "above", "above", etc., may be used herein to facilitate describing an element or feature as relationship to another element or feature shown. In addition to the orientation shown in the figures, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

本公開揭露一種修復粒子,可應用於包括熱塑成形的塑形製程,例如模內成形(In-Mold Forming,IMF)、模內電子(In-Mold Electron,IME)等。在熱塑成形製程中加熱並拉伸具有導線之基板,例如可撓式或曲形觸控面板的觸控層。後續將以熱塑成形的實施例進行說明,然而應理解,含有加熱並拉伸的其他變化製程也在本公開的範圍內。The present disclosure discloses a repair particle, which can be applied to a molding process including thermoplastic forming, such as In-Mold Forming (IMF), In-Mold Electron (IME), and the like. Substrates with wires, such as touch layers of flexible or curved touch panels, are heated and stretched in a thermoplastic forming process. Thermoforming examples will be described below, however it should be understood that other variations involving heating and stretching are within the scope of the present disclosure.

本公開揭露一種具有低熔點內核的修復粒子,並將修復粒子添加到具有導電層的疊層中。當導電層在熱塑成形中因每個部份受力不同而產生程度不一的裂痕時,修復粒子同時釋出內核形成的導電液。導電液在導電層的裂痕中形成穩定導體,降低導電層原先因受損而升高的電阻值,以解決熱塑成形造成的斷線問題。The present disclosure discloses a repair particle with a low melting point core, and the repair particle is added to a stack having a conductive layer. When the conductive layer has different degrees of cracks due to different forces on each part during the thermoplastic forming, the repair particles release the conductive liquid formed by the inner core at the same time. The conductive liquid forms a stable conductor in the cracks of the conductive layer, and reduces the resistance value of the conductive layer that was originally increased due to damage, so as to solve the problem of wire breakage caused by thermoplastic forming.

根據一些實施例,第1A圖至第1C圖是熱塑成形裝置在X-Z平面的截面圖。為繪示清楚的目的,第1A圖至第1C圖僅繪示簡化後的熱塑成形裝置。因此,在本公開的範圍內,熱塑成形裝置可包括未繪示於圖示中的額外部件。熱塑成型的步驟包括加熱、拉伸、冷卻,分別繪示於第1A圖至第1C圖中。包括加熱、拉伸、冷卻以外步驟的熱塑成形,也在本公開的範圍內。Figures 1A-1C are cross-sectional views of a thermoplastic forming apparatus in the X-Z plane, according to some embodiments. For the purpose of clarity of illustration, FIGS. 1A to 1C only illustrate a simplified thermoplastic forming apparatus. Accordingly, within the scope of the present disclosure, the thermoplastic forming apparatus may include additional components not shown in the figures. The steps of thermoplastic forming include heating, stretching, and cooling, which are shown in Figures 1A to 1C, respectively. Thermoforming, including steps other than heating, stretching, and cooling, is also within the scope of this disclosure.

根據一些實施例,第1A圖是熱塑成形裝置在加熱步驟的截面圖。疊層100在模具110上,且加熱器120在疊層100上並覆蓋疊層100。疊層100包括基板、導電層和保護層形成的疊層,並可包括其他材料層或電子元件在其中或其上。模具110用於拉伸製程中,可包括疊層100經熱塑成形後的任意形狀。加熱器120可將疊層100加熱至製程溫度使基板軟化,軟化程度足以在後續製程中將基板拉伸塑形成預期的形狀。Figure 1A is a cross-sectional view of a thermoplastic forming apparatus during a heating step, according to some embodiments. The stack 100 is on the mold 110 and the heater 120 is on and covering the stack 100 . The stack 100 includes a stack of substrates, conductive layers, and protective layers, and may include layers of other materials or electronic components therein or thereon. The mold 110 is used in the stretching process, and may include any shape of the laminate 100 after being thermoformed. The heater 120 may heat the stack 100 to a process temperature to soften the substrate, to a degree sufficient to stretch the substrate into a desired shape during subsequent processes.

根據一些實施例,第1B圖是熱塑成形裝置在拉伸步驟,且疊層100正拉伸變形的截面圖。在一些實施例中,加熱器120可具有進氣孔H,使乾淨乾燥空氣(Clean Dry Air,CDA)A可穿過進氣孔H並加壓在模具110中的疊層100上,如第1B圖所繪示。在模具110中已軟化的疊層100受到乾淨乾燥空氣A的加壓而逐漸拉伸變形,使原本平直的疊層100拉伸成曲形,最終疊層100貼合模具110的上表面。在一些實施例中,加熱器120為不具有進氣孔H的壓板,且模具110的底部可具有穿透模具110的抽氣孔,抽氣孔可抽取疊層100和模具110之間的空氣,使疊層100在拉伸步驟是受到真空吸引而拉伸貼合模具110的上表面。在一些實施例中,加熱器120可具有進氣孔H,且模具110的底部可具有穿透模具110的抽氣孔,使疊層100同時受到乾淨乾燥空氣A的加壓和真空吸引而拉伸貼合模具110的上表面。FIG. 1B is a cross-sectional view of a thermoplastic forming apparatus during a stretching step and the laminate 100 is being stretched, according to some embodiments. In some embodiments, the heater 120 may have an air intake hole H, so that Clean Dry Air (CDA) A may pass through the air intake hole H and be pressurized on the stack 100 in the mold 110 , as described in Section 1. As shown in Figure 1B. In the mold 110 , the softened laminate 100 is gradually stretched and deformed by the pressure of clean and dry air A, so that the originally flat laminate 100 is stretched into a curved shape, and finally the laminate 100 is attached to the upper surface of the mold 110 . In some embodiments, the heater 120 is a pressing plate without an air intake hole H, and the bottom of the mold 110 may have an air suction hole penetrating the mold 110, and the air suction hole can extract the air between the stack 100 and the mold 110, so that the In the stretching step, the laminate 100 is drawn by vacuum to be stretched against the upper surface of the mold 110 . In some embodiments, the heater 120 may have an air inlet hole H, and the bottom of the mold 110 may have an air suction hole penetrating the mold 110 , so that the laminate 100 can be stretched by the pressure and vacuum suction of the clean dry air A at the same time. Fit the upper surface of the mold 110 .

根據一些實施例,第1C圖是熱塑成形裝置在冷卻步驟的截面圖。疊層100貼合模具110的上表面,並逐漸冷卻到非軟化溫度,使疊層100脫離模具110時具有拉伸後形狀。Figure 1C is a cross-sectional view of a thermoplastic forming apparatus during a cooling step, according to some embodiments. The laminate 100 is attached to the upper surface of the mold 110 and is gradually cooled to a non-softening temperature so that the laminate 100 has a stretched shape when released from the mold 110 .

根據一些實施例,第2圖是第1B圖中區域R在X-Y平面的俯視放大圖。為清楚繪示的目的,第2圖僅繪示疊層100中的導電材料104,然而如上述,疊層100可包括基板、保護層、其他材料層、電子元件等。在拉伸步驟中,基板拉伸變形對導電材料具有破壞力,使疊層100中的導電材料104可產生裂痕200。裂痕200可為不規則形狀並多為狹長型,裂痕200的長邊方向約垂直於疊層100拉伸變形的方向。裂痕200可出現在導電材料104之中,亦可出現在導電材料104的邊緣。裂痕200可使疊層100電阻值上升、產生斷線現象。According to some embodiments, FIG. 2 is an enlarged top view of the region R in the X-Y plane of FIG. 1B . For the purpose of clarity of illustration, FIG. 2 only shows the conductive material 104 in the stack 100, however, as mentioned above, the stack 100 may include a substrate, a protective layer, other material layers, electronic components, and the like. During the stretching step, the stretching deformation of the substrate has a destructive force on the conductive material, so that the conductive material 104 in the stack 100 may generate cracks 200 . The cracks 200 may be irregular in shape and are mostly elongated, and the longitudinal direction of the cracks 200 is approximately perpendicular to the direction of the tensile deformation of the laminate 100 . Cracks 200 may occur in conductive material 104 or may occur at the edges of conductive material 104 . The cracks 200 can increase the resistance value of the laminate 100 and cause disconnection.

為克服導電材料在熱塑成形拉伸過程中產生裂痕並斷線之現象,本公開提供一種修復粒子,並將修復粒子添加於包括導電材料的疊層之中,使導電材料在拉伸過程中受損的同時,修復粒子可修補導電材料中的裂痕,降低拉伸造成的電阻差異和元件驅動問題。In order to overcome the phenomenon that the conductive material is cracked and broken during the thermoplastic forming and stretching process, the present disclosure provides a repair particle, and the repair particle is added to the stack including the conductive material, so that the conductive material can be stretched during the stretching process. While damaged, the repair particles repair cracks in the conductive material, reducing resistance differences and component drive issues caused by stretching.

根據一些實施例,第3圖是疊層300在X-Z平面的截面圖。疊層300的組成類似於疊層100,包括但不限於基板、導電材料、保護層、其他材料層、電子元件等,且疊層300也可用於如第1A圖至第1C圖所繪示的熱塑拉伸製程中。在一些實施例中,平直的疊層300經過第1B圖中所示拉伸製程後為曲形,使疊層300可成為曲形或可撓式觸控面板的觸控層。Figure 3 is a cross-sectional view of the stack 300 in the X-Z plane, according to some embodiments. The composition of the stack 300 is similar to that of the stack 100, including but not limited to substrates, conductive materials, protective layers, other material layers, electronic components, etc., and the stack 300 can also be used as depicted in FIGS. 1A-1C in the thermoplastic stretching process. In some embodiments, the flat laminate 300 is curved after the stretching process shown in FIG. 1B , so that the laminate 300 can be a touch layer of a curved or flexible touch panel.

在一些實施例中,疊層300包括基板302、在基板302上的導電層304和保護層306。基板302的材料可以是塑膠薄膜(例如聚碳酸酯(Polycarbonate,PC)薄膜)。基板302的熔點(例如,大於200℃)高於熱塑成形中加熱步驟的製程溫度(例如,145℃),但在製程溫度下,基板302可軟化以進行後續拉伸塑形。導電層304的材料可以是銀膠(silver paste)、奈米銀、聚二氧乙基噻吩與聚苯乙烯磺酸的複合物(PEDOT:PSS)等導電材料,導電材料的熔點可選擇在熱塑成形的製程溫度中不會形成熔融態,例如當製程溫度為145℃時,可選用銀膠(熔點為960℃)、奈米銀(熔點為150℃)等。保護層306的材料可以是氧化物,並覆蓋保護層306下方的導電層304。In some embodiments, stack 300 includes substrate 302 , conductive layer 304 and protective layer 306 on substrate 302 . The material of the substrate 302 may be a plastic film (eg, a polycarbonate (PC) film). The melting point (eg, greater than 200° C.) of the substrate 302 is higher than the process temperature (eg, 145° C.) of the heating step in thermoplastic forming, but at the process temperature, the substrate 302 can be softened for subsequent stretching. The material of the conductive layer 304 can be a conductive material such as silver paste, nano-silver, a compound of polydioxyethylthiophene and polystyrene sulfonic acid (PEDOT:PSS), and the melting point of the conductive material can be selected to be in the heat. The plastic forming process temperature will not form a molten state. For example, when the process temperature is 145°C, silver paste (melting point of 960°C), nano-silver (melting point of 150°C), etc. can be used. The material of the protective layer 306 may be oxide, and covers the conductive layer 304 under the protective layer 306 .

和疊層100不同的地方是,疊層300添加了修復粒子400在導電層304中。在一些實施例中,修復粒子400添加於導電層304的溶液中,並一同塗佈於基板302上形成疊層300的導電層304,如第3圖所繪示。Unlike stack 100 , stack 300 incorporates repair particles 400 in conductive layer 304 . In some embodiments, the repairing particles 400 are added to the solution of the conductive layer 304 and coated on the substrate 302 together to form the conductive layer 304 of the stack 300 , as shown in FIG. 3 .

根據一些實施例,第4圖是導電粒子400的截面圖。修復粒子400為球狀雙層結構,包括內核402和外殼404。在一些實施例中,修復粒子400的直徑W可為1微米至5微米,然而也可使用更大或更小的直徑W。FIG. 4 is a cross-sectional view of conductive particle 400, according to some embodiments. The repair particle 400 is a spherical double-layer structure including a core 402 and an outer shell 404 . In some embodiments, the diameter W of the repair particles 400 may be 1 to 5 microns, although larger or smaller diameters W may also be used.

修復粒子400的內核402是導電材料,同時亦為修補導電層304中裂痕的主成分。在一些實施例中,內核402具有在熱塑成形的加熱步驟形成可流動態的特性。可選擇內核402的熔點介於熱塑成形的製程溫度和室溫之間,使內核402在拉伸步驟處於熔融態。熔融的內核402形成之導電液在導電層304拉伸受力的過程中,可同時填補拉伸造成的裂痕,使導電層304因受損而升高的電阻值下降,以達到修補導電層304的目的。The inner core 402 of the repairing particle 400 is a conductive material, and is also the main component of the repairing crack in the conductive layer 304 . In some embodiments, the inner core 402 has the property of being flowable during the heating step of thermoforming. The melting point of the inner core 402 may be selected to be between the thermoplastic forming process temperature and room temperature, so that the inner core 402 is in a molten state during the stretching step. The conductive liquid formed by the molten inner core 402 can simultaneously fill the cracks caused by the stretching during the process of the conductive layer 304 being stretched and stressed, so that the increased resistance value of the conductive layer 304 due to damage decreases, so as to repair the conductive layer 304 the goal of.

在一些實施例中,熔融態的內核402在熱塑成形的冷卻步驟,可於室溫中形成固體,並成為連接導電層304裂痕處的穩定導體。在其他的一些實施例中,內核402熔點可低於室溫,在修補導電層304之後,內核402的導電液在熱塑成形冷卻步驟可形成氧化層於流體表面,限制內核402流體的流動行為,以形成導電層304裂痕中的穩定導體。在一些實施例中,內核402的材料包括鎵(熔點為29.76℃)、鎵銦合金(共熔點為21.4℃)或錫鉍合金(共熔點為139℃)。In some embodiments, the molten core 402 can form a solid at room temperature during the cooling step of thermoplastic forming and become a stable conductor connecting the cracks in the conductive layer 304 . In other embodiments, the melting point of the inner core 402 may be lower than room temperature. After the conductive layer 304 is repaired, the conductive liquid of the inner core 402 may form an oxide layer on the surface of the fluid during the thermoplastic forming and cooling step to limit the flow behavior of the inner core 402 fluid. , to form stable conductors in the cracks of the conductive layer 304 . In some embodiments, the material of the core 402 includes gallium (melting point 29.76°C), gallium indium alloy (eutectic point 21.4°C) or tin-bismuth alloy (eutectic point 139°C).

在一些實施例中,內核402可包括溶於有機溶劑(例如,甲苯)中的碳黑。包括碳黑的內核402在熱塑成形的拉伸步驟具有可流動的特性,填補導電層304中的裂痕,並透過乾燥去除有機溶劑,使內核402中的碳黑在裂痕中形成穩定連接的導電固體。In some embodiments, the inner core 402 may include carbon black dissolved in an organic solvent (eg, toluene). The inner core 402 including carbon black has flowable properties during the stretching step of thermoplastic forming, fills the cracks in the conductive layer 304, and removes the organic solvent by drying, so that the carbon black in the inner core 402 forms a conductive conductive layer with a stable connection in the cracks. solid.

修復粒子400的外殼404是保持修復粒子400分散的材料層。在一些實施例中,內核402在熱塑成形的加熱步驟會形成或維持導電液狀態,但在導電層304由於拉伸而產生裂痕之前,外殼404可保護內核402並隔離內核402的導電液與導電層304。當導電層304在拉伸步驟產生裂痕時,外殼404也受到拉伸的應力而破裂,使內核402形成的導電液釋出並修補導電層304。在一些實施例中,為避免外殼404在導電層304拉伸斷裂之前,提早破裂而提早釋出內核402,外殼404可包括耐熱性和耐溶劑性,使外殼404在製程溫度不會融化或產生化學反應,其中溶劑為塗佈導電層304溶液的溶劑(例如,水、乙醇、乙醚、異丙醇、二乙二醇單丁醚等)。在一些實施例中,外殼404包括有機高分子(例如聚尿素甲醛樹脂(poly(urea-formaldehyde),PUF))或金屬氧化物(例如,二氧化錫、氧化鎵)。The outer shell 404 of the repair particles 400 is a layer of material that keeps the repair particles 400 dispersed. In some embodiments, the inner core 402 forms or maintains a conductive liquid state during the heating step of thermoplastic forming, but before the conductive layer 304 cracks due to stretching, the outer shell 404 can protect the inner core 402 and isolate the conductive liquid of the inner core 402 from the conductive liquid. Conductive layer 304 . When the conductive layer 304 is cracked during the stretching step, the outer shell 404 is also broken by the tensile stress, so that the conductive liquid formed by the inner core 402 is released and the conductive layer 304 is repaired. In some embodiments, in order to prevent the outer shell 404 from prematurely breaking and releasing the inner core 402 before the conductive layer 304 is stretched and fractured, the outer shell 404 may include heat resistance and solvent resistance, so that the outer shell 404 will not melt or generate at the process temperature. Chemical reaction, wherein the solvent is the solvent for coating the conductive layer 304 solution (eg, water, ethanol, diethyl ether, isopropanol, diethylene glycol monobutyl ether, etc.). In some embodiments, the housing 404 includes an organic polymer (eg, poly(urea-formaldehyde) (PUF)) or a metal oxide (eg, tin dioxide, gallium oxide).

根據上述的一些實施例,修復粒子400添加於導電層304中,當疊層300加熱到製程溫度時,修復粒子400的內核402為導電液的型態並透過外殼404與導電層304分隔。當導電層304拉伸塑型而產生斷裂程度不一的裂痕時,在裂痕周圍修復粒子400的外殼404也一同破裂,釋出的內核402之導電液填補導電層304中的裂痕。當疊層300冷卻時,裂痕中內核402的導電液也形成穩定導體,連接導電層304中的裂痕,降低原本因導電層304受損而上升的電阻值。在一些實施例中,以導電層304和修復粒子400的體積為分母時,修復粒子400的添加量在10vol%至30vol%時具有修復效果。According to some of the above embodiments, the repairing particles 400 are added in the conductive layer 304 . When the stack 300 is heated to the process temperature, the inner core 402 of the repairing particles 400 is in the form of conductive liquid and is separated from the conductive layer 304 through the outer shell 404 . When the conductive layer 304 is stretched and molded to produce cracks with different degrees of fracture, the outer shells 404 of the repair particles 400 around the cracks are also cracked, and the released conductive liquid of the inner core 402 fills the cracks in the conductive layer 304 . When the laminate 300 is cooled, the conductive liquid in the inner core 402 in the cracks also forms a stable conductor, connecting the cracks in the conductive layer 304 and reducing the resistance value originally increased due to the damage of the conductive layer 304 . In some embodiments, when the volume of the conductive layer 304 and the repairing particles 400 is used as the denominator, the addition amount of the repairing particles 400 has a repairing effect when the amount is 10 vol% to 30 vol%.

參考第3圖和第5圖,其中第5圖繪示疊層300在第1B圖的拉伸步驟中,區域R之導電層304在X-Y平面的俯視放大圖。在拉伸步驟中,因製程溫度而軟化的基板302拉伸變形,導致基板302上的導電層304隨之變形並產生裂痕500。同時,在導電層304中裂痕500周圍的修復粒子400之外殼404受到拉伸應力而破裂,釋出內核402形成的導電液。內核402形成的導電液在導電層304中的裂痕500形成修復導體402′,並在後續製程中固化形成裂痕500中的穩定導體。在一些實施例中,修復導體402′填補導電層304的裂痕500可為完全填充。在一些實施例中,修復導體402′填補導電層304的裂痕500,可為修復導體402′接觸到裂痕兩側相對的部分側壁。在一些實施例中,裂痕500中可具有複數個修復導體402′。Referring to FIGS. 3 and 5, FIG. 5 shows an enlarged top view of the conductive layer 304 in the region R in the X-Y plane during the stretching step of the stack 300 in FIG. 1B. In the stretching step, the substrate 302 softened by the process temperature is stretched and deformed, so that the conductive layer 304 on the substrate 302 is deformed and cracks 500 are generated. At the same time, the outer shells 404 of the repair particles 400 around the cracks 500 in the conductive layer 304 are ruptured by tensile stress, and the conductive liquid formed by the inner core 402 is released. The crack 500 in the conductive layer 304 formed by the conductive liquid formed by the inner core 402 forms the repair conductor 402 ′, and is cured to form a stable conductor in the crack 500 in the subsequent process. In some embodiments, the repair conductor 402' filling the crack 500 in the conductive layer 304 may be completely filled. In some embodiments, the repair conductor 402 ′ fills the crack 500 in the conductive layer 304 , and the repair conductor 402 ′ can contact the opposite part of the sidewall on both sides of the crack. In some embodiments, the crack 500 may have a plurality of repair conductors 402' in it.

根據一些實施例,第6圖至第8圖是疊層600、疊層700和疊層800在X-Z平面的截面圖。疊層600至疊層800的組成類似於含有修復粒子400的疊層300,包括但不限於基板、導電材料、保護層、其他材料層、電子元件等,且疊層600至疊層800也可用於如第1A圖至第1C圖所繪示的熱塑拉伸製程中。6-8 are cross-sectional views of stack 600, stack 700, and stack 800 in the X-Z plane, according to some embodiments. The composition of stacks 600 to 800 is similar to that of stack 300 containing repair particles 400, including but not limited to substrates, conductive materials, protective layers, other material layers, electronic components, etc., and stacks 600 to 800 can also be used In the thermoplastic stretching process as depicted in Figures 1A to 1C.

疊層600至疊層800與疊層300不同的地方是,修復粒子400添加於疊層中不同的位置。在一些實施例中,如第6圖所示,修復粒子400可添加於保護層606的溶液中,並一同塗佈於導電層604上形成疊層600的保護層606。在一些實施例中,如第7圖所示,修復粒子400可添加於溶劑中,並塗佈在基板702上以形成導電層704下的粒子層708,其中溶劑可為水或有機溶劑(例如,乙醇、乙醚)。在一些實施例中,如第8圖所示,修復粒子400可添加於溶劑中,並塗佈在導電層804上以形成導電層804上的粒子層808,其中溶劑可為水或有機溶劑(例如,乙醇、乙醚)。儘管修復粒子400的添加位置不同,疊層600至疊層800中修復粒子400修補導電層中裂痕的方式和疊層300是相同的。Stacks 600 to 800 differ from stack 300 in that repair particles 400 are added at different locations in the stack. In some embodiments, as shown in FIG. 6 , the repair particles 400 may be added to the solution of the protective layer 606 and coated on the conductive layer 604 together to form the protective layer 606 of the stack 600 . In some embodiments, as shown in FIG. 7, the repair particles 400 may be added in a solvent and coated on the substrate 702 to form a particle layer 708 under the conductive layer 704, wherein the solvent may be water or an organic solvent (eg , ethanol, ether). In some embodiments, as shown in FIG. 8, the repair particles 400 can be added in a solvent and coated on the conductive layer 804 to form a particle layer 808 on the conductive layer 804, wherein the solvent can be water or an organic solvent ( For example, ethanol, ether). The repair particles 400 in the stacks 600 to 800 repair the cracks in the conductive layer in the same manner as the stack 300, although the locations where the repairing particles 400 are added are different.

本公開揭露一種應用於熱塑成形的修復粒子,修復粒子包括內核和外殼,其中內核具有導電性和低於熱塑成形製程溫度的內核熔點,外殼受力破裂後會釋出內核形成的導電液。本公開亦揭露一種熱塑成形的方法,包括在疊層中添加複數個修復粒子,修復粒子在熱塑成形的拉伸製程中因外殼受力而釋出內核形成的導電液,導電液填入導電層中的裂痕並形成修復導體在裂痕中,降低導電層因裂痕產生而升高的電阻值,提升導電材料的拉伸能力。The present disclosure discloses a repair particle for thermoplastic forming. The repair particle includes a core and a shell, wherein the core has conductivity and a melting point of the core lower than the temperature of the thermoplastic forming process. . The present disclosure also discloses a method of thermoplastic forming, which includes adding a plurality of repairing particles in a laminate, the repairing particles release a conductive liquid formed by an inner core due to the force of the outer shell during the stretching process of the thermoplastic forming, and the conductive liquid is filled into Cracks in the conductive layer are formed and repaired conductors are formed. In the cracks, the resistance value raised by the conductive layer due to cracks is reduced, and the tensile ability of the conductive material is improved.

前面概述一些實施例的特徵,使得本領域技術人員可更好地理解本公開的觀點。本領域技術人員應該理解,他們可以容易地使用本公開作為設計或修改其他製程和結構的基礎,以實現相同的目的和/或實現與本文介紹之實施例相同的優點。本領域技術人員還應該理解,這樣的等同構造不脫離本公開的精神和範圍,並且在不脫離本公開的精神和範圍的情況下,可以進行各種改變、替換和變更。The foregoing outlines the features of some embodiments so that those skilled in the art may better understand the concepts of the disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. It should also be understood by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the present disclosure.

100:疊層 104:導電層 110:模具 120:加熱器 200,500:裂痕 300,600,700,800:疊層 302,602,702,802:基板 304,604,704,804:導電層 306,606,706,806:保護層 400:修復粒子 402:內核 404:外殼 402′:修復導體 708,808:粒子層 A:乾淨乾燥空氣 H:進氣孔 R:區域 W:直徑 X,Y,Z:軸 100: Laminate 104: Conductive layer 110: Mold 120: Heater 200,500: Rift 300,600,700,800: Laminate 302,602,702,802: Substrates 304,604,704,804: Conductive layer 306,606,706,806: Protective Layer 400: Fix Particles 402: Kernel 404: Shell 402′: Repair conductor 708,808: Particle Layer A: Clean and dry air H: air intake R: area W: diameter X, Y, Z: axis

當結合附圖閱讀時,從以下詳細描述中可以最好地理解本公開的各方面。應注意,根據工業中的標準方法,各種特徵未按比例繪製。實際上,為了清楚地談及,可任意增加或減少各種特徵的尺寸。 第1A圖至第1C圖根據一些實施例,繪示在熱塑成形製程各步驟中,熱塑成形設備的截面圖。 第2圖根據一些實施例,繪示在拉伸製程中導電材料的俯視圖。 第3圖根據一些實施例,繪示添加修復粒子於導電層中的疊層截面圖。 第4圖根據一些實施例,繪示修復粒子的截面圖。 第5圖根據一些實施例,繪示在拉伸製程中,添加修復粒子之導電材料的俯視圖。 第6圖至第8圖根據一些實施例,繪示添加修復粒子於導電層以外之材料層的疊層截面圖。 Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard methods in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of reference. FIGS. 1A-1C illustrate cross-sectional views of a thermoplastic forming apparatus during various steps of the thermoplastic forming process, according to some embodiments. FIG. 2 illustrates a top view of a conductive material during a stretching process, according to some embodiments. FIG. 3 is a cross-sectional view of a stack of adding repair particles to a conductive layer, according to some embodiments. FIG. 4 illustrates a cross-sectional view of a repair particle, according to some embodiments. FIG. 5 is a top view of a conductive material to which repair particles are added during a stretching process, according to some embodiments. FIGS. 6 to 8 illustrate stacked cross-sectional views of material layers other than the conductive layer with repair particles added, according to some embodiments.

300:疊層 302:基板 304:導電層 306:保護層 400:修復粒子 X,Z:軸 300: Laminate 302: Substrate 304: Conductive layer 306: Protective Layer 400: Fix Particles X, Z: axis

Claims (9)

一種應用於熱塑成形的疊層,包括:一基板;一導電層,位於該基板上,其中該導電層在該熱塑成形之後包括複數個裂痕;一保護層,位於該導電層上;複數個修復粒子,添加於該疊層中,其中各該修復粒子包括一內核和包覆該內核的一外殼,其中該內核具有導電性和一內核熔點,該內核熔點低於該熱塑成形的一製程溫度,該內核在該熱塑成形中形成一導電液,其中該外殼具有一外殼熔點高於該熱塑成形的該製程溫度,該外殼在該熱塑成形中破裂釋出該導電液,使得該導電液在該些裂痕中形成降低該導電層的電阻值的複數個修復導體。 A laminate for thermoplastic forming, comprising: a substrate; a conductive layer on the substrate, wherein the conductive layer includes a plurality of cracks after the thermoplastic forming; a protective layer on the conductive layer; a plurality of A repair particle is added to the stack, wherein each repair particle includes a core and a shell surrounding the core, wherein the core has electrical conductivity and a core melting point lower than the thermoplastically formed one process temperature, the core forms a conductive liquid in the thermoplastic forming, wherein the shell has a melting point of the shell is higher than the process temperature of the thermoplastic forming, the shell ruptures in the thermoplastic forming to release the conductive liquid, so that The conductive liquid forms a plurality of repair conductors in the cracks that reduce the resistance value of the conductive layer. 如請求項1所述之疊層,其中該些修復粒子的添加位置包括該導電層之中、該導電層與該基板之間、該導電層與該保護層之間或該保護層之中。 The laminate according to claim 1, wherein the addition positions of the repair particles include in the conductive layer, between the conductive layer and the substrate, between the conductive layer and the protective layer, or in the protective layer. 如請求項1所述之疊層,其中以該導電層和該些修復粒子的體積為分母,該些修復粒子的添加量在範圍10vol%至30vol%。 The laminate according to claim 1, wherein with the volume of the conductive layer and the repair particles as the denominator, the addition amount of the repair particles is in the range of 10vol% to 30vol%. 如請求項1所述之疊層,其中該些裂痕的長邊方向約垂直於該熱塑成形的拉伸方向,該些修復導體連接各該裂痕的相對側壁。 The laminate of claim 1, wherein the longitudinal directions of the cracks are approximately perpendicular to the stretching direction of the thermoplastic, and the repair conductors connect opposite sidewalls of the cracks. 如請求項1所述之疊層,其中該疊層為觸控面板的觸控層。 The laminate according to claim 1, wherein the laminate is a touch layer of a touch panel. 一種熱塑成形的方法,包括:在一疊層中添加複數個修復粒子;加熱該疊層,使各該修復粒子的一內核形成一導電液;拉伸該疊層,使平直的該疊層拉伸成曲形,該疊層的一導電層形成複數個裂痕而具有上升的一電阻值,同時各該修復粒子的一外殼受力破裂;各該修復粒子釋出該內核形成的該導電液,該導電液填入該些裂痕;以及該導電液形成複數個修復導體在該些裂痕中,使得該導電層的該電阻值下降。 A method of thermoplastic forming, comprising: adding a plurality of repair particles in a stack; heating the stack to make a core of each repair particle form a conductive liquid; stretching the stack to make the stack straight The layer is stretched into a curved shape, a conductive layer of the stack forms a plurality of cracks and has a rising resistance value, and at the same time, an outer shell of each repair particle is broken by force; each repair particle releases the conductive layer formed by the inner core. liquid, the conductive liquid fills the cracks; and the conductive liquid forms a plurality of repair conductors in the cracks, so that the resistance value of the conductive layer decreases. 如請求項6所述之方法,其中該內核在加熱後為熔融態,且該內核形成的該導電液在降溫後形成該些修復導體。 The method of claim 6, wherein the inner core is in a molten state after being heated, and the conductive liquid formed by the inner core is cooled to form the repair conductors. 如請求項6所述之方法,其中該內核在加熱後為液態,且該內核形成的該導電液在乾燥後形成該些修 復導體。 The method of claim 6, wherein the inner core is in a liquid state after heating, and the conductive liquid formed by the inner core is dried to form the repairs complex conductor. 如請求項6所述之方法,其中該方法應用於模內成形或模內電子製程。 The method of claim 6, wherein the method is applied to in-mold forming or in-mold electronics.
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