TWI757688B - Thermoelectric module - Google Patents

Thermoelectric module Download PDF

Info

Publication number
TWI757688B
TWI757688B TW109104243A TW109104243A TWI757688B TW I757688 B TWI757688 B TW I757688B TW 109104243 A TW109104243 A TW 109104243A TW 109104243 A TW109104243 A TW 109104243A TW I757688 B TWI757688 B TW I757688B
Authority
TW
Taiwan
Prior art keywords
metal substrate
hole
electrodes
disposed
thermoelectric module
Prior art date
Application number
TW109104243A
Other languages
Chinese (zh)
Other versions
TW202044627A (en
Inventor
全聲宰
金聖喆
Original Assignee
韓商Lg伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020200015059A external-priority patent/KR102172292B1/en
Application filed by 韓商Lg伊諾特股份有限公司 filed Critical 韓商Lg伊諾特股份有限公司
Publication of TW202044627A publication Critical patent/TW202044627A/en
Application granted granted Critical
Publication of TWI757688B publication Critical patent/TWI757688B/en

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/81Structural details of the junction

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Telephone Function (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

A thermoelectric module according to an exemplary embodiment includes a first metal substrate including a first through-hole, a first insulating layer disposed on the first metal substrate, a first electrode part disposed on the first insulating layer and including a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the first electrode part, a second electrode part disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and including a plurality of second electrodes, a second insulating layer disposed on the second electrode part, and a second metal substrate disposed on the second insulating layer and including a second through-hole, wherein the first metal substrate includes an effective region in which the first electrode part is disposed and a peripheral region formed outside the effective region, the second metal substrate includes an effective region in which the second electrode part is disposed and a peripheral region formed outside the effective region, the first through-hole occupies a portion of the effective region of the first metal substrate, the second through-hole occupies a portion of the effective region of the second metal substrate, and the first through-hole and the second through-hole are formed at positions corresponding to each other.

Description

熱電模組 Thermoelectric Module

本申請案主張在2019年2月12日申請之韓國專利申請案第2019-0016245號、在2020年1月20日申請之韓國專利申請案第2020-0007448號及在2020年2月7日申請之韓國專利申請案第2020-0015059號的優先權及權利,該等申請案之揭示內容以全文引用之方式併入本文中。 This application claims Korean Patent Application No. 2019-0016245, filed on February 12, 2019, Korean Patent Application No. 2020-0007448, filed on January 20, 2020, and filed on February 7, 2020 Priority and right to Korean Patent Application No. 2020-0015059, the disclosures of which are incorporated herein by reference in their entirety.

本發明係關於一種熱電模組,且更特定而言,係關於熱電模組之耦接結構。 The present invention relates to a thermoelectric module, and more particularly, to a coupling structure of the thermoelectric module.

熱電效應為由於材料中之電子及電洞移動而發生的現象,且係指熱與電之間的直接能量轉換。 The thermoelectric effect is a phenomenon that occurs due to the movement of electrons and holes in a material, and refers to the direct energy conversion between heat and electricity.

熱電元件通常被稱作使用熱電效應之元件,且熱電元件具有如下結構:其中P型熱電材料及N型熱電材料在金屬電極之間接合以形成PN接面對。 The thermoelectric element is generally referred to as an element using the thermoelectric effect, and the thermoelectric element has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are joined between metal electrodes to form a PN junction pair.

熱電元件可分類為使用根據溫度改變之電阻改變之元件;使用賽貝克(Seebeck)效應之元件,賽貝克效應為由於溫度差而產生電動勢之現象;使用帕爾貼(Peltier)效應之元件,帕爾貼效應為由於電流而出現熱吸收或熱發射之現象;及其類似者。 Thermoelectric elements can be classified into elements that use resistance changes according to temperature changes; elements that use the Seebeck effect, which is a phenomenon in which an electromotive force is generated due to temperature differences; elements that use the Peltier effect, Pa The Teltier effect is the phenomenon of heat absorption or heat emission due to electric current; and the like.

熱電元件已不同地應用於家用電器、電子組件、通信組件及其類似者。舉例而言,熱電元件可應用於冷卻設備、加熱設備、發電設備及其類似者。因此,對熱電元件之熱電效能的需求逐漸增加。 Thermoelectric elements have been variously applied to household appliances, electronic components, communication components, and the like. For example, thermoelectric elements can be applied to cooling equipment, heating equipment, power generating equipment, and the like. Therefore, the demand for thermoelectric performance of thermoelectric elements is gradually increasing.

熱電元件包括基板、電極及熱電支腳。複數個熱電支腳以陣列形式安置於上部基板與下部基板之間。複數個上部電極安置於複數個熱電支腳與上部基板之間。複數個下部電極安置於複數個熱電支腳與下部基 板之間。 The thermoelectric element includes a substrate, electrodes and thermoelectric legs. A plurality of thermoelectric legs are arranged in an array between the upper substrate and the lower substrate. The plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate. A plurality of lower electrodes are arranged on a plurality of thermoelectric legs and the lower base between the boards.

熱電元件之上部基板及下部基板中之一者變成高溫部分,且其中之另一者變成低溫部分。在此狀況下,當在高溫部分之基板與低溫部分之基板之間產生溫度差時,在高溫部分之基板中可發生熱變形,且因此可出現應力集中於基板之接合界面處的現象。結果,在接合界面處可能會發生分層及開裂,此可降低產品之品質。 One of the upper substrate and the lower substrate of the thermoelectric element becomes a high temperature portion, and the other of them becomes a low temperature portion. In this case, when a temperature difference is generated between the substrate of the high temperature portion and the substrate of the low temperature portion, thermal deformation may occur in the substrate of the high temperature portion, and thus a phenomenon in which stress is concentrated at the bonding interface of the substrates may occur. As a result, delamination and cracking may occur at the joint interface, which may degrade the quality of the product.

特定而言,高溫部分之基板的邊緣為熱變形量大於基板之中心部分之熱變形量的部分。當高溫部分之基板的邊緣與低溫部分之基板的邊緣耦接時,由於熱變形,應力集中在接合界面處可能會增加。 Specifically, the edge of the substrate at the high temperature portion is the portion where the thermal deformation amount is greater than that of the central portion of the substrate. When the edge of the substrate of the high temperature portion is coupled with the edge of the substrate of the low temperature portion, stress concentration at the bonding interface may increase due to thermal deformation.

本發明係有關於提供熱電模組之耦接結構。 The present invention relates to providing a coupling structure for a thermoelectric module.

本發明之一個態樣提供一種熱電模組,其包括:第一金屬基板,其包括第一通孔;第一絕緣層,其安置於第一金屬基板上;第一電極部分,其安置於第一絕緣層上且包括複數個第一電極;複數個P型熱電支腳及複數個N型熱電支腳,其安置於第一電極部分上;第二電極部分,其安置於複數個P型熱電支腳及複數個N型熱電支腳上且包括複數個第二電極;第二絕緣層,其安置於第二電極部分上;及第二金屬基板,其安置於第二絕緣層上且包括第二通孔,其中第一金屬基板包括安置有第一電極部分之有效區及形成於有效區之外的周邊區,第二金屬基板包括安置有第二電極部分之有效區及形成於有效區之外的周邊區,第一通孔安置於第一金屬基板之有效區中,第二通孔安置於第二金屬基板之有效區中,且第一通孔及第二通孔形成於彼此對應之位置處。 One aspect of the present invention provides a thermoelectric module, which includes: a first metal substrate including a first through hole; a first insulating layer disposed on the first metal substrate; and a first electrode portion disposed on the first through hole an insulating layer including a plurality of first electrodes; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, which are arranged on the first electrode part; the second electrode part is arranged on a plurality of P-type thermoelectric legs The legs and the plurality of N-type thermoelectric legs include a plurality of second electrodes; a second insulating layer disposed on the second electrode portion; and a second metal substrate disposed on the second insulating layer and including a first Two through holes, wherein the first metal substrate includes an active area where the first electrode portion is arranged and a peripheral area formed outside the active area, and the second metal substrate includes an active area where the second electrode portion is arranged and a peripheral area formed in the active area In the outer peripheral area, the first through holes are arranged in the active area of the first metal substrate, the second through holes are arranged in the active area of the second metal substrate, and the first through holes and the second through holes are formed in the corresponding areas of each other. location.

該熱電模組可進一步包括耦接部件,該耦接部件穿過第一通孔及第二通孔且固定第一金屬基板及第二金屬基板。 The thermoelectric module may further include a coupling member passing through the first through hole and the second through hole and fixing the first metal substrate and the second metal substrate.

第二金屬基板可提供為彼此間隔開之複數個第二金屬基板,且第二金屬基板中之每一者可包括至少一個第二通孔。 The second metal substrates may be provided as a plurality of second metal substrates spaced apart from each other, and each of the second metal substrates may include at least one second through hole.

絕緣部件可安置於彼此間隔開之複數個第二金屬基板之間。 The insulating member may be disposed between a plurality of second metal substrates spaced apart from each other.

絕緣部件之厚度可小於複數個第二金屬基板之厚度。 The thickness of the insulating member may be smaller than the thickness of the plurality of second metal substrates.

安置於第一金屬基板上之複數個第一電極中之一些的長度方向可不同於剩餘第一電極之長度方向,且安置於第二金屬基板上之複數個第二電極中之一些的長度方向可不同於剩餘第二電極之長度方向,其中每一長度方向為每一電極之長寬度方向。 The length direction of some of the plurality of first electrodes disposed on the first metal substrate may be different from the length direction of the remaining first electrodes, and the length direction of some of the plurality of second electrodes disposed on the second metal substrate may be different from the length direction of the remaining second electrodes, wherein each length direction is the length and width direction of each electrode.

除第一電極部分中之邊緣區的第一電極之外,複數個第一電極中之至少兩者可經安置使得其長度方向在垂直於第一方向之第二方向上指向,且剩餘第一電極可經安置使得其長度方向在第一方向上定向。除第二電極部分中之邊緣區的第二電極之外,複數個第二電極中之至少兩者可經安置使得其長度方向在垂直於第一方向之第二方向上定向,且剩餘第二電極可經安置使得其長度方向在第一方向上定向。 Except for the first electrode of the edge region in the first electrode portion, at least two of the plurality of first electrodes may be arranged such that their length direction points in a second direction perpendicular to the first direction, and the remaining first electrodes The electrodes may be positioned such that their lengths are oriented in the first direction. Except for the second electrode of the edge region in the second electrode portion, at least two of the plurality of second electrodes may be arranged such that their length direction is oriented in a second direction perpendicular to the first direction, and the remaining second electrodes The electrodes may be positioned such that their lengths are oriented in the first direction.

除邊緣區中之第一電極之外,在複數個第一電極當中,經安置使得長度方向在第二方向上定向之第一電極之數目可為兩個的倍數,且除邊緣區中之第二電極之外,在複數個第二電極當中,經安置使得長度方向在第二方向上定向之第二電極之數目可為兩個的倍數。 Except for the first electrode in the edge region, among the plurality of first electrodes, the number of the first electrodes disposed so that the length direction is oriented in the second direction may be a multiple of two, and except for the first electrode in the edge region In addition to the two electrodes, among the plurality of second electrodes, the number of the second electrodes arranged such that the lengthwise direction is oriented in the second direction may be a multiple of two.

在複數個第二電極當中,以彼此相對之兩行或兩列安置於邊緣區中的第二電極中之至少一些可經安置使得其長度方向在第二方向上定向。 Among the plurality of second electrodes, at least some of the second electrodes disposed in the edge region in two rows or two columns opposite to each other may be disposed such that their lengths are oriented in the second direction.

第一金屬基板可包括第一孔配置區,其為藉由連接最接近第一通孔且鄰近於彼此而安置之第一電極之表面的虛擬線形成的空間,第二金屬基板可包括第二孔配置區,其為藉由連接最接近第二通孔且鄰近於彼此而安置之第二電極之表面的虛擬線形成的空間,鄰近於第一孔配置區之至少一個第一電極可經安置使得其長度方向在第二方向上定向,且鄰近於第二孔配置區之至少一個第二電極可經安置使得其長度方向在第二方向上定向。 The first metal substrate may include a first hole arrangement region, which is a space formed by a dummy line connecting surfaces of the first electrodes disposed closest to the first through holes and adjacent to each other, and the second metal substrate may include a second A hole arrangement area, which is a space formed by an imaginary line connecting the surfaces of the second electrodes that are closest to the second through hole and disposed adjacent to each other, at least one first electrode adjacent to the first hole arrangement area can be disposed Such that its length direction is oriented in the second direction, and at least one second electrode adjacent to the second hole arrangement region may be positioned such that its length direction is oriented in the second direction.

第一金屬基板可包括第一孔配置區,其為藉由連接最接近第一通孔且鄰近於彼此而安置之第一電極之表面的虛擬線形成的空間,第二金屬基板可包括第二孔配置區,其為藉由連接最接近第二通孔且鄰近於彼此而安置之第二電極之表面的虛擬線形成的空間,複數個第一電極中之至 少兩者可經安置使得其至少一部分與藉由自界定第一孔配置區之虛擬線延伸之擴展線形成的虛擬空間重疊,且複數個第二電極中之至少兩者可經安置使得其至少一部分與藉由自界定第二孔配置區之虛擬線延伸之延伸線形成的虛擬空間重疊。 The first metal substrate may include a first hole arrangement region, which is a space formed by a dummy line connecting surfaces of the first electrodes disposed closest to the first through holes and adjacent to each other, and the second metal substrate may include a second A hole arrangement area, which is a space formed by a dummy line connecting the surfaces of the second electrodes that are closest to the second through holes and that are disposed adjacent to each other, to the first electrodes of the plurality of At least two of the plurality of second electrodes may be positioned such that at least a portion thereof overlaps a virtual space formed by an extension line extending from a virtual line defining the first hole configuration area, and at least two of the plurality of second electrodes may be positioned such that at least A portion overlaps with the virtual space formed by the extension line extending from the virtual line defining the second hole arrangement area.

第一通孔可提供為複數個第一通孔,第一孔配置區可圍繞複數個第一通孔中之每一者形成,第二通孔可提供為複數個第二通孔,第二孔配置區可圍繞複數個第二通孔中之每一者形成。 The first through holes may be provided as a plurality of first through holes, the first hole arrangement area may be formed around each of the plurality of first through holes, the second through holes may be provided as a plurality of second through holes, the second through holes The hole arrangement region may be formed around each of the plurality of second through holes.

複數個第一通孔及複數個第二通孔可形成於彼此對應之位置處。 A plurality of first through holes and a plurality of second through holes may be formed at positions corresponding to each other.

熱電模組可進一步包括形成於第一金屬基板之周邊區中的第三通孔。 The thermoelectric module may further include third through holes formed in the peripheral region of the first metal substrate.

第二金屬基板之面積與第一金屬基板之面積的比率之範圍可為0.5至0.95。 The ratio of the area of the second metal substrate to the area of the first metal substrate may range from 0.5 to 0.95.

熱電模組可進一步包括鄰近於耦接部件而安置之絕緣插入部件。 The thermoelectric module may further include an insulating insert member positioned adjacent to the coupling member.

第一通孔之直徑可不同於第二通孔之直徑。 The diameter of the first through hole may be different from the diameter of the second through hole.

第二通孔之直徑可為第一通孔之直徑的1.1至2.0倍。 The diameter of the second through hole may be 1.1 to 2.0 times the diameter of the first through hole.

絕緣插入部件之一部分可安置於第二通孔中。 A portion of the insulating insert may be seated in the second through hole.

熱電模組可進一步包括安置於第一金屬基板與第一絕緣層之間的第三絕緣層。 The thermoelectric module may further include a third insulating layer disposed between the first metal substrate and the first insulating layer.

本發明之另一態樣提供一種發電設備,其包含熱電模組及安置於熱電模組之表面上的冷卻單元,其中熱電模組包含:第一金屬基板,其包括第一通孔;第一絕緣層,其安置於第一金屬基板上;第一電極部分,其安置於第一絕緣層上且包括複數個第一電極;複數個P型熱電支腳及複數個N型熱電支腳,其安置於第一電極部分上;第二電極部分,其安置於複數個P型熱電支腳及複數個N型熱電支腳上且包括複數個第二電極;第二絕緣層,其安置於第二電極部分上;及第二金屬基板,其安置於第二絕緣層上且包括第二通孔,其中第一金屬基板包括安置有第一電極部分之有效區 及形成於有效區之外的周邊區,第二金屬基板包括安置有第二電極部分之有效區及形成於有效區之外的周邊區,第一通孔安置於第一金屬基板之有效區中,第二通孔安置於第二金屬基板之有效區中,且第一通孔及第二通孔形成於彼此對應之位置處,其中熱電模組進一步包含穿過第一通孔及第二通孔且固定第一金屬基板及第二金屬基板之耦接部件,其中冷卻單元與第一金屬基板耦接,其中耦接部件之一部分安置於冷卻單元中。 Another aspect of the present invention provides a power generation device including a thermoelectric module and a cooling unit disposed on a surface of the thermoelectric module, wherein the thermoelectric module includes: a first metal substrate including a first through hole; a first an insulating layer, which is arranged on the first metal substrate; a first electrode part, which is arranged on the first insulating layer and includes a plurality of first electrodes; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, which are is arranged on the first electrode part; the second electrode part is arranged on a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs and includes a plurality of second electrodes; a second insulating layer is arranged on the second on the electrode portion; and a second metal substrate disposed on the second insulating layer and including a second through hole, wherein the first metal substrate includes an active area on which the first electrode portion is disposed and a peripheral area formed outside the active area, the second metal substrate includes an active area where the second electrode portion is disposed and a peripheral area formed outside the active area, and the first through hole is disposed in the active area of the first metal substrate , the second through hole is disposed in the effective area of the second metal substrate, and the first through hole and the second through hole are formed at positions corresponding to each other, wherein the thermoelectric module further includes passing through the first through hole and the second through hole The hole is used to fix the coupling member of the first metal substrate and the second metal substrate, wherein the cooling unit is coupled with the first metal substrate, and a part of the coupling member is arranged in the cooling unit.

與第一金屬基板有關之區的溫度可低於與第二金屬基板有關之區的溫度。 The temperature of the region associated with the first metal substrate may be lower than the temperature of the region associated with the second metal substrate.

20:熱電模組 20: Thermoelectric modules

20h:孔 20h: hole

110:第一金屬基板 110: The first metal substrate

111:第一通孔 111: first through hole

112:第一孔配置區 112: The first hole configuration area

113:第三通孔 113: Third through hole

120:第一樹脂層 120: The first resin layer

130:第一電極 130: First electrode

130-1:第一電極 130-1: First Electrode

130-2:第一電極 130-2: First Electrode

130-2n:第一電極 130-2n: first electrode

130-3:第一電極 130-3: First Electrode

130-4:第一電極 130-4: First Electrode

130a:第一電極 130a: first electrode

130b:第一電極 130b: first electrode

130c:第一電極 130c: first electrode

130d:第一電極 130d: first electrode

130e:第一電極 130e: first electrode

130f:第一電極 130f: first electrode

130g:第一電極 130g: first electrode

130h:第一電極 130h: first electrode

130i:第一電極 130i: first electrode

130j:第一電極 130j: first electrode

130k:第一電極 130k: first electrode

130l:第一電極 130l: first electrode

130m:第一電極 130m: first electrode

130n:第一電極 130n: first electrode

130o:第一電極 130o: first electrode

130p:第一電極 130p: first electrode

130q:第一電極 130q: first electrode

130r:第一電極 130r: first electrode

130s:第一電極 130s: first electrode

130t:第一電極 130t: first electrode

130u:第一電極 130u: first electrode

130v:第一電極 130v: the first electrode

140:P型熱電支腳 140: P-type thermoelectric feet

150:N型熱電支腳 150:N type thermoelectric feet

160:第二電極 160: Second electrode

160a:第二電極 160a: Second electrode

160b:第二電極 160b: second electrode

160c:第二電極 160c: Second electrode

160d:第二電極 160d: second electrode

160e:第二電極 160e: Second Electrode

160g:第二電極 160g: second electrode

160f:第二電極 160f: second electrode

160h:第二電極 160h: second electrode

160i:第二電極 160i: second electrode

160j:第二電極 160j: Second electrode

160k:第二電極 160k: second electrode

160l:第二電極 160l: second electrode

160m:第二電極 160m: second electrode

160n:第二電極 160n: second electrode

160o:第二電極 160o: second electrode

160p:第二電極 160p: second electrode

160q:第二電極 160q: second electrode

160r:第二電極 160r: Second electrode

160s:第二電極 160s: second electrode

160t:第二電極 160t: second electrode

160u:第二電極 160u: second electrode

160v:第二電極 160v: second electrode

160w:第二電極 160w: second electrode

160x:第二電極 160x: second electrode

160y:第二電極 160y: second electrode

160z:第二電極 160z: second electrode

170:第二樹脂層 170: Second resin layer

180:第二金屬基板 180: Second metal substrate

181:第二通孔 181: second through hole

182:第二孔配置區 182: Second hole configuration area

190:耦接部件 190: Coupling parts

191:第一部件 191: Part 1

192:第二部件 192: Second Part

200:熱絕緣材料 200: Thermal Insulation

201:虛擬線 201: Virtual Line

202:虛擬線 202: Virtual Line

203:虛擬線 203: Virtual Line

204:虛擬線 204: Virtual Line

211:虛擬線 211: Virtual Line

212:虛擬線 212: Virtual Line

213:虛擬線 213: Virtual Line

214:虛擬線 214: Virtual Line

220:散熱片 220: heat sink

221:扁平基板 221: Flat substrate

230:連接部件 230: Connecting parts

241:溝槽 241: Groove

400:耦接部件 400: Coupling parts

410:絕緣插入部件 410: Insulating Inserts

500:端子電極 500: Terminal electrode

A1:有效區 A1: Effective area

A2:周邊區 A2: Surrounding area

B1:有效區 B1: Effective area

B2:周邊區 B2: Surrounding area

C:冷卻單元 C: cooling unit

d1:直徑 d1: diameter

d2:直徑 d2: diameter

d2':直徑 d2': diameter

H:散熱墊 H: cooling pad

H1:虛擬空間 H1: virtual space

H2:虛擬空間 H2: virtual space

H3:虛擬空間 H3: virtual space

H4:虛擬空間 H4: virtual space

S:通孔 S: through hole

W1:長寬度 W1: long width

W2:短寬度 W2: Short width

對於一般熟習此項技術者而言,藉由參看附圖詳細描述本發明之例示性實施例,本發明之以上及其他目標、特徵及優點將變得更顯而易見,其中: The above and other objects, features and advantages of the present invention will become more apparent to those of ordinary skill in the art from the detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings, wherein:

圖1為根據本發明之第一例示性實施例的熱電模組之側視圖; 1 is a side view of a thermoelectric module according to a first exemplary embodiment of the present invention;

圖2為根據本發明之第一例示性實施例的熱電模組之透視圖; 2 is a perspective view of a thermoelectric module according to a first exemplary embodiment of the present invention;

圖3為根據本發明之第一例示性實施例的熱電模組之分解透視圖; 3 is an exploded perspective view of a thermoelectric module according to a first exemplary embodiment of the present invention;

圖4為說明根據本發明之第一例示性實施例之熱電模組安裝於冷卻單元中的狀態之側視圖; 4 is a side view illustrating a state in which the thermoelectric module according to the first exemplary embodiment of the present invention is installed in a cooling unit;

圖5為根據本發明之第二例示性實施例的熱電模組之透視圖; 5 is a perspective view of a thermoelectric module according to a second exemplary embodiment of the present invention;

圖6為說明根據本發明之第二例示性實施例之熱電模組安裝於冷卻單元中的狀態之側視圖; 6 is a side view illustrating a state in which a thermoelectric module according to a second exemplary embodiment of the present invention is installed in a cooling unit;

圖7為說明將第一電極及第二電極配置於第一金屬基板及第二金屬基板上之方法的第一實例之視圖; 7 is a view illustrating a first example of a method of disposing the first electrode and the second electrode on the first metal substrate and the second metal substrate;

圖8為說明圖7中所展示之複數個第一電極及複數個第二電極彼此重疊的狀態之視圖;圖9至圖12為說明根據各種例示性實施例之將第一電極及第二電極配置於第一金屬基板及第二金屬基板上的方法之視圖;及 圖13為說明根據例示性實施例之熱電元件之耦接結構的視圖集合。 8 is a view illustrating a state in which the plurality of first electrodes and the plurality of second electrodes shown in FIG. 7 overlap each other; FIGS. 9 to 12 are views illustrating the first and second electrodes according to various exemplary embodiments. a view of the method of disposing on the first metal substrate and the second metal substrate; and 13 is a set of views illustrating a coupling structure of a thermoelectric element according to an exemplary embodiment.

在下文中,將參看附圖詳細描述本發明之例示性實施例。 Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

然而,本發明之技術精神不限於下文所揭示之一些例示性實施例,但可以各種不同形式實施。在不脫離本發明之技術精神的情況下,可選擇性地組合及取代組件中之一或多者以在例示性實施例之間使用。 However, the technical spirit of the present invention is not limited to some exemplary embodiments disclosed below, but may be implemented in various forms. One or more of the components may be selectively combined and substituted for use among the exemplary embodiments without departing from the technical spirit of the present invention.

又,除非另外定義,否則本文中所使用之術語(包括技術及科學術語)可解譯為具有與一般熟習本發明所屬技術者通常所理解的含義相同的含義。可考慮到相關技術之上下文含義來解譯如辭典中所定義之彼等術語的一般術語。 Also, unless otherwise defined, terms (including technical and scientific terms) used herein are to be interpreted to have the same meaning as commonly understood by one of ordinary skill in the art. The general terms of those terms as defined in the dictionary may be interpreted in consideration of the contextual meaning of the related art.

此外,本文中所使用之術語意欲說明例示性實施例,但並不意欲限制本發明。 Furthermore, the terminology used herein is intended to describe exemplary embodiments, but not to limit the invention.

在本說明書中,除非另外指定,否則呈單數形式之術語可包括複數形式。當表達「A、B及C中之至少一者(或一或多個)」時,其可包括A、B及C之所有可能組合中之一或多者。 In this specification, unless specified otherwise, terms in the singular may include the plural. When "at least one (or one or more) of A, B and C" is expressed, it can include one or more of all possible combinations of A, B and C.

此外,可在本文中使用諸如「第一」、「第二」、「A」、「B」、「(a)」及「(b)」之術語以描述本發明之例示性實施例的組件 Furthermore, terms such as "first," "second," "A," "B," "(a)," and "(b)" may be used herein to describe components of exemplary embodiments of this invention.

該等術語中之每一者並不用以定義對應組件之本質、次序或序列,而是僅用以區分對應組件與其他組件。 Each of these terms is not used to define the nature, order, or sequence of the corresponding element, but is only used to distinguish the corresponding element from other elements.

在一個組件描述為「連接」、「耦接」或「接合」至另一組件之狀況下,此描述包括一個組件直接「連接」、「耦接」或「接合」至另一組件之狀況及一個組件「連接」、「耦接」及「接合」至另一組件且又一組件安置於一個組件與另一組件之間的狀況兩者。 Where an element is described as being "connected," "coupled," or "joined" to another element, the description includes the condition that one element is directly "connected," "coupled," or "joined" to the other element, and Both the conditions in which one component is "connected," "coupled," and "bonded" to another component and the further component is disposed between one component and another component.

在任一個組件描述為形成或安置於另一組件「上(或下方)」之狀況下,此描述包括兩個組件形成為彼此直接接觸之狀況及兩個組件彼 此間接接觸使得一或多個其他組件介入於兩個組件之間的狀況兩者。此外,在一個組件描述為形成於另一組件「上(或下方)」之狀況下,此描述可包括一個組件相對於另一組件形成於上側或下側處之狀況。 Where any one element is described as being formed or disposed "on (or below)" another element, the description includes both the condition in which the two elements are formed in direct contact with each other and the fact that the two elements are each other This indirect contact enables one or more other components to intervene in both conditions between the two components. Furthermore, where one component is described as being formed "on (or below)" another component, the description may include the situation where one component is formed at an upper side or a lower side relative to the other component.

圖1為根據本發明之第一例示性實施例的熱電模組之側視圖,圖2為根據本發明之第一例示性實施例的熱電模組之透視圖,且圖3為根據本發明之第一例示性實施例的熱電模組之分解透視圖。圖4為說明根據本發明之第一例示性實施例之熱電模組安裝於冷卻單元的狀態之側視圖。 1 is a side view of a thermoelectric module according to a first exemplary embodiment of the present invention, FIG. 2 is a perspective view of a thermoelectric module according to a first exemplary embodiment of the present invention, and FIG. 3 is a An exploded perspective view of the thermoelectric module of the first exemplary embodiment. 4 is a side view illustrating a state in which the thermoelectric module according to the first exemplary embodiment of the present invention is mounted on a cooling unit.

參看圖1至圖4,熱電模組包括一個第一金屬基板110、第一樹脂層120、複數個第一電極130、複數個P型熱電支腳140、複數個N型支腳150、複數個第二電極160、第二樹脂層170、一個第二金屬基板180、耦接部件190及熱絕緣材料200。第一金屬基板110及第二金屬基板180可包括耦接部件190所穿過之至少一個通孔。 1 to 4, the thermoelectric module includes a first metal substrate 110, a first resin layer 120, a plurality of first electrodes 130, a plurality of P-type thermoelectric legs 140, a plurality of N-type legs 150, a plurality of The second electrode 160 , the second resin layer 170 , a second metal substrate 180 , the coupling member 190 and the thermal insulating material 200 . The first metal substrate 110 and the second metal substrate 180 may include at least one through hole through which the coupling member 190 passes.

根據本發明之另一例示性實施例,一個熱電模組包括一個第一金屬基板110及複數個第二金屬基板180,且包括安置於一個第一金屬基板110與複數個金屬基板180之間的第一樹脂層120、複數個第一電極130、複數個P型熱電支腳140、複數個N型熱電支腳150、複數個第二電極160及第二樹脂層170。第一金屬基板110及第二金屬基板180可具有耦接部件190所穿過之至少一個通孔。 According to another exemplary embodiment of the present invention, a thermoelectric module includes a first metal substrate 110 and a plurality of second metal substrates 180, and includes a plurality of metal substrates 180 disposed between the first metal substrate 110 and the plurality of metal substrates 180. The first resin layer 120 , a plurality of first electrodes 130 , a plurality of P-type thermoelectric legs 140 , a plurality of N-type thermoelectric legs 150 , a plurality of second electrodes 160 and a second resin layer 170 . The first metal substrate 110 and the second metal substrate 180 may have at least one through hole through which the coupling member 190 passes.

第一金屬基板110形成為具有板形狀。此外,第一金屬基板110可固定至冷卻單元C或加熱單元(未圖示)上。根據本發明之例示性實施例將描述為第一金屬基板110固定至冷卻單元C之實例。在此狀況下,孔20h形成於對應於在第一金屬基板110中形成之第一通孔111的位置處,該孔形成於冷卻單元C中,且下文待描述之耦接部件190可穿過第一通孔111且插入至孔20h中。如在圖9至圖11之例示性實施例中,第三通孔113可進一步甚至形成於第一金屬基板110之周邊區中,亦即,未安置有複數個P型熱電支腳140及複數個N型熱電支腳150之區。在此狀況下,耦接部件190可插入至第三通孔113以及冷卻單元C之形成於對應於第三通孔113 之位置處的孔20h中。散熱墊H可進一步安置於第一金屬基板110與冷卻單元C之間。 The first metal substrate 110 is formed to have a plate shape. In addition, the first metal substrate 110 may be fixed to the cooling unit C or the heating unit (not shown). An example in which the first metal substrate 110 is fixed to the cooling unit C will be described according to the exemplary embodiment of the present invention. In this case, the hole 20h is formed at a position corresponding to the first through hole 111 formed in the first metal substrate 110, the hole is formed in the cooling unit C, and the coupling member 190 to be described later can pass through The first through hole 111 is inserted into the hole 20h. As in the exemplary embodiment of FIGS. 9 to 11 , the third through holes 113 may be further formed even in the peripheral region of the first metal substrate 110 , that is, the plurality of P-type thermoelectric legs 140 and the plurality of P-type thermoelectric legs 140 are not disposed A zone of 150 N-type thermoelectric legs. In this case, the coupling member 190 can be inserted into the third through hole 113 and the cooling unit C is formed corresponding to the third through hole 113 in the hole 20h at the position. The heat dissipation pad H may be further disposed between the first metal substrate 110 and the cooling unit C.

第一金屬基板110可包括選自鋁、鋁合金、銅及銅合金當中之至少一者。在此狀況下,當將電壓施加至熱電模組時,根據帕爾貼效應,第一金屬基板110可吸收熱量以充當低溫部分,且第二金屬基板180可發射熱量以充當高溫部分。同時,當將不同溫度施加至第一金屬基板110及第二金屬基板180時,電子由於溫度差而自高溫區移動至低溫區以產生熱電動勢。此被稱作賽貝克效應,且藉由賽貝克效應所產生之熱電動勢在熱電元件之電路中產生電力。 The first metal substrate 110 may include at least one selected from aluminum, aluminum alloy, copper, and copper alloy. In this case, when a voltage is applied to the thermoelectric module, according to the Peltier effect, the first metal substrate 110 may absorb heat to serve as a low temperature portion, and the second metal substrate 180 may emit heat to serve as a high temperature portion. Meanwhile, when different temperatures are applied to the first metal substrate 110 and the second metal substrate 180, electrons move from the high temperature region to the low temperature region due to the temperature difference to generate thermoelectromotive force. This is called the Seebeck effect, and electricity is generated in the circuit of the thermoelectric element by the thermoelectromotive force generated by the Seebeck effect.

第一金屬基板110包括至少一個第一通孔111。第一通孔111形成於對應於在下文待描述之第二金屬基板180中形成之第二通孔181的位置處。第一通孔111可形成為與第一金屬基板110之周邊部分隔開一定距離。在此狀況下,當耦接部件190穿過第一通孔111及第二通孔181時,第一金屬基板110及第二金屬基板180可藉由耦接部件190固定。此處,形成於第一金屬基板110之與複數個第一電極130接觸之第一表面中的第一通孔111之直徑可與形成於第二金屬基板180之與複數個第二電極160接觸之第一表面中的第二通孔181之直徑相同。然而,根據下文待描述之絕緣插入部件的配置形式、位置及其類似者,形成於第一金屬基板110之與複數個第一電極130接觸之第一表面中的第一通孔111之直徑可不同於形成於第二金屬基板180之與複數個第二電極160接觸之第一表面中的第二通孔181之直徑。 The first metal substrate 110 includes at least one first through hole 111 . The first through holes 111 are formed at positions corresponding to the second through holes 181 formed in the second metal substrate 180 to be described later. The first through holes 111 may be formed to be spaced apart from the peripheral portion of the first metal substrate 110 by a certain distance. In this case, when the coupling member 190 passes through the first through hole 111 and the second through hole 181 , the first metal substrate 110 and the second metal substrate 180 can be fixed by the coupling member 190 . Here, the diameter of the first through hole 111 formed in the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 may be the same as the diameter of the first through hole 111 formed in the second metal substrate 180 in contact with the plurality of second electrodes 160 The diameters of the second through holes 181 in the first surface are the same. However, the diameter of the first through holes 111 formed in the first surface of the first metal substrate 110 that is in contact with the plurality of first electrodes 130 may vary depending on the configuration, position, and the like of the insulating interposer to be described later. It is different from the diameter of the second through holes 181 formed in the first surface of the second metal substrate 180 in contact with the plurality of second electrodes 160 .

第一樹脂層120塗覆於第一金屬基板110上,且複數個第一電極130安置於第一樹脂層上。 The first resin layer 120 is coated on the first metal substrate 110, and a plurality of first electrodes 130 are disposed on the first resin layer.

此處,第一金屬基板110可與第一樹脂層120直接接觸。為此,表面粗糙度可形成於第一金屬基板110之兩個表面中安置有第一樹脂層120的表面之全部或部分上,亦即,第一金屬基板110之面向第一樹脂層120的表面之全部或部分。因此,有可能防止第一樹脂層120在第一金屬基板110與第一樹脂層120熱壓接合時分層的問題。在本說明書中,表 面粗糙度可意謂不均勻性且可與表面粗度互換地使用。 Here, the first metal substrate 110 may be in direct contact with the first resin layer 120 . To this end, the surface roughness may be formed on all or part of the surface of the first metal substrate 110 on which the first resin layer 120 is disposed, that is, the surface of the first metal substrate 110 facing the first resin layer 120 all or part of the surface. Therefore, it is possible to prevent the problem of delamination of the first resin layer 120 when the first metal substrate 110 is thermocompression-bonded with the first resin layer 120 . In this manual, the table Surface roughness can mean non-uniformity and can be used interchangeably with surface roughness.

第一樹脂層120及第二樹脂層170可由包括樹脂及無機填料之樹脂組合物製成,且樹脂可為環氧樹脂或聚矽氧樹脂。此處,可以範圍為樹脂組合物之68vol%至88vol%的量來包括無機填料。當以小於68vol%之量包括無機填料時,熱傳導效應可為低的。當以超過88vol%之量包括無機填料時,樹脂層與金屬基板之間的黏著力可降低,且樹脂層可易於破裂。 The first resin layer 120 and the second resin layer 170 may be made of a resin composition including resin and inorganic filler, and the resin may be epoxy resin or polysiloxane. Here, the inorganic filler may be included in an amount ranging from 68 vol % to 88 vol % of the resin composition. When the inorganic filler is included in an amount of less than 68 vol%, the thermal conduction effect may be low. When the inorganic filler is included in an amount exceeding 88 vol%, the adhesive force between the resin layer and the metal substrate may be lowered, and the resin layer may be easily broken.

環氧樹脂可包括環氧化合物及固化劑。在此狀況下,相對於10體積份之環氧化合物,可包括1至10體積份之固化劑。此處,環氧化合物可包括選自結晶環氧化合物、非晶形環氧化合物及聚矽氧環氧化合物當中之至少一者。結晶環氧化合物可包括液晶原結構。液晶原為液晶之基本單元且包括剛性結構。非晶形環氧化合物可為分子中具有兩個或多於兩個環氧基之習知非晶形環氧化合物,例如衍生自雙酚A或雙酚F之縮水甘油醚化合物。此處,固化劑可包括選自胺基固化劑、苯酚基固化劑、酸酐基固化劑、聚硫醇基固化劑、聚胺基醯胺基固化劑、異氰酸酯基固化劑及嵌段異氰酸酯基固化劑當中之至少一者,且可使用兩種或多於兩種固化劑之混合物。 The epoxy resin may include an epoxy compound and a curing agent. In this case, the curing agent may be included in an amount of 1 to 10 parts by volume relative to 10 parts by volume of the epoxy compound. Here, the epoxy compound may include at least one selected from a crystalline epoxy compound, an amorphous epoxy compound, and a polysiloxane epoxy compound. The crystalline epoxy compound may include a mesogenic structure. The mesogen is the basic unit of liquid crystal and includes a rigid structure. The amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more than two epoxy groups in the molecule, such as a glycidyl ether compound derived from bisphenol A or bisphenol F. Here, the curing agent may include a curing agent selected from the group consisting of amine-based curing agent, phenol-based curing agent, acid anhydride-based curing agent, polythiol-based curing agent, polyamidoamine-based curing agent, isocyanate-based curing agent and blocked isocyanate-based curing agent At least one of the curing agents, and a mixture of two or more curing agents may be used.

無機填料可包括氧化鋁及氮化物,且氮化物可以範圍為55wt%至95wt%之量,且更佳以範圍為60wt%至80wt%之量包括於無機填料中。當以數值範圍包括氮化物時,有可能增加熱導率及接合強度。此處,氮化物可包括選自氮化硼及氮化鋁中之至少一者。此處,氮化硼可為氮化硼聚結物,其中板形氮化硼聚結在一起。 The inorganic filler may include alumina and nitride, and the nitride may be included in the inorganic filler in an amount ranging from 55 wt % to 95 wt %, and more preferably in an amount ranging from 60 wt % to 80 wt %. When the nitride is included in the numerical range, it is possible to increase thermal conductivity and bonding strength. Here, the nitride may include at least one selected from boron nitride and aluminum nitride. Here, the boron nitride may be a boron nitride agglomerate in which plate-shaped boron nitride is agglomerated together.

在此狀況下,氮化硼聚結物之粒徑(D50)的範圍可為250μm至350μm,且氧化鋁之粒徑(D50)的範圍可為10μm至30μm。當氮化硼聚結物之粒徑(D50)及氧化鋁之粒徑(D50)在此類數值範圍內時,氮化硼聚結物及氧化鋁可均勻地分散於環氧樹脂組合物中,藉此在整個樹脂層中均勻地提供熱傳導效應及黏著效能。 In this case, the particle size (D50) of the boron nitride agglomerates may range from 250 μm to 350 μm, and the particle size (D50) of the alumina may range from 10 μm to 30 μm. When the particle size (D50) of the boron nitride agglomerate and the particle size (D50) of the alumina are within such numerical ranges, the boron nitride agglomerate and the alumina can be uniformly dispersed in the epoxy resin composition , thereby providing heat conduction effect and adhesion effect uniformly in the whole resin layer.

根據本發明之例示性實施例,第一金屬基板110及第二金屬基板180中之至少一者可包括複數個樹脂層。舉例而言,第三樹脂層(未圖示)可進一步安置於第一樹脂層120與複數個第一電極130之間。替代地, 第四樹脂層(未圖示)可進一步安置於複數個第二電極160與第二樹脂層170之間。在此狀況下,第一樹脂層120及第三樹脂層(未圖示)可能在組合物、楊氏模數、熱膨脹係數及厚度中之至少一者上不同。第二樹脂層170及第四樹脂層(未圖示)可能在組合物、楊氏模數、熱膨脹係數及厚度中之至少一者上不同。舉例而言,當第一樹脂層120及第三樹脂層(未圖示)中之一者包括樹脂組合物時,其中之另一者可包括樹脂組合物、氧化鋁層或包括矽及鋁之複合物,該另一者之組合物、楊氏模數、熱膨脹係數及厚度中之至少一者不同於第一樹脂層120及第三樹脂層中之該者。此處,複合物可為選自包括矽及鋁之氧化物、碳化物及氮化物當中的至少一者。舉例而言,複合物可包括Al-Si鍵、Al-氧(O)-Si鍵、Si-O鍵、Al-Si-O鍵及Al-O鍵中之至少一者。如上文所描述,包括Al-Si鍵、Al-O-Si鍵、Si-O鍵、Al-Si-O鍵及Al-O鍵中之至少一者的複合物可具有優良的絕緣效能,藉此獲得高耐電壓效能。替代地,複合物可為氧化物、碳化物或氮化物,除矽及鋁以外,其進一步包括鈦、鋯、硼及鋅。為此,複合物可經由將鋁與無機黏合劑及有機-無機混合黏合劑中之至少一者混合且接著熱處理所得混合物的製程來獲得。無機黏合劑可包括例如選自二氧化矽(SiO2)、金屬醇鹽、三氧化二硼(B2O3)及氧化鋅(ZnO2)當中之至少一者。無機黏合劑可包括無機粒子且可在與水接觸時溶膠化或凝膠化以充當黏合劑。在此狀況下,選自二氧化矽(SiO2)、金屬醇鹽及三氧化二硼(B2O3)當中之至少一者可用以增加與金屬之黏著性,且氧化鋅(ZnO2)可用以增加樹脂層之強度且增加熱導率。在本說明書中,術語「耐電壓效能」可意謂在某一電壓及某一電流下維持一段時間而無絕緣崩潰的特性。舉例而言,當在2.5kV之交流電(AC)電壓及1mA之電流下將特性維持10秒而無絕緣崩潰時,耐電壓可為2.5kV。替代地,當第二樹脂層170及第四樹脂層(未圖示)中之一者包括樹脂組合物時,其中之另一者可包括樹脂組合物、氧化鋁層或包括矽及鋁之複合物,該另一者之組合物、楊氏模數、熱膨脹係數及厚度中之至少一者不同於第二樹脂層170及第四樹脂層中之該者。此處,每一樹脂層可與絕緣層互換地使用。 According to an exemplary embodiment of the present invention, at least one of the first metal substrate 110 and the second metal substrate 180 may include a plurality of resin layers. For example, the third resin layer (not shown) may be further disposed between the first resin layer 120 and the plurality of first electrodes 130 . Alternatively, a fourth resin layer (not shown) may be further disposed between the plurality of second electrodes 160 and the second resin layer 170 . In this case, the first resin layer 120 and the third resin layer (not shown) may be different in at least one of composition, Young's modulus, thermal expansion coefficient, and thickness. The second resin layer 170 and the fourth resin layer (not shown) may differ in at least one of composition, Young's modulus, coefficient of thermal expansion, and thickness. For example, when one of the first resin layer 120 and the third resin layer (not shown) includes a resin composition, the other of them may include a resin composition, an aluminum oxide layer, or a layer including silicon and aluminum. The composite, at least one of the composition, Young's modulus, thermal expansion coefficient, and thickness of the other is different from the one of the first resin layer 120 and the third resin layer. Here, the composite may be at least one selected from oxides, carbides, and nitrides including silicon and aluminum. For example, the composite may include at least one of Al-Si bonds, Al-oxygen (O)-Si bonds, Si-O bonds, Al-Si-O bonds, and Al-O bonds. As described above, the composite including at least one of Al-Si bond, Al-O-Si bond, Si-O bond, Al-Si-O bond, and Al-O bond may have excellent insulating performance by This achieves high withstand voltage performance. Alternatively, the composite may be an oxide, carbide or nitride, which further includes titanium, zirconium, boron and zinc in addition to silicon and aluminum. To this end, the composite can be obtained through a process of mixing aluminum with at least one of an inorganic binder and an organic-inorganic hybrid binder and then heat-treating the resulting mixture. The inorganic binder may include, for example, at least one selected from the group consisting of silicon dioxide (SiO 2 ), metal alkoxides, boron trioxide (B 2 O 3 ), and zinc oxide (ZnO 2 ). Inorganic binders may include inorganic particles and may sol or gel upon contact with water to act as a binder. In this case, at least one selected from silicon dioxide (SiO 2 ), metal alkoxides, and boron trioxide (B 2 O 3 ) can be used to increase adhesion to metals, and zinc oxide (ZnO 2 ) It can be used to increase the strength of the resin layer and increase the thermal conductivity. In this specification, the term "voltage resistance performance" may mean the characteristic of maintaining a certain voltage and a certain current for a period of time without insulation breakdown. For example, the withstand voltage may be 2.5kV when the characteristics are maintained for 10 seconds without insulation breakdown at an alternating current (AC) voltage of 2.5kV and a current of 1 mA. Alternatively, when one of the second resin layer 170 and the fourth resin layer (not shown) includes a resin composition, the other of them may include a resin composition, an aluminum oxide layer, or a composite including silicon and aluminum material, at least one of the composition, Young's modulus, thermal expansion coefficient, and thickness of the other is different from the one of the second resin layer 170 and the fourth resin layer. Here, each resin layer may be used interchangeably with an insulating layer.

複數個第一電極130安置於第一樹脂層120上。複數個P型熱電支腳140及複數個N型熱電支腳150安置於第一電極130上。在此狀況下,第一電極130電連接至P型熱電支腳140及N型熱電支腳150。此處,第一電極130可包括選自銅(Cu)、鋁(Al)、銀(Ag)及鎳(Ni)當中之至少一者。 A plurality of first electrodes 130 are disposed on the first resin layer 120 . A plurality of P-type thermoelectric legs 140 and a plurality of N-type thermoelectric legs 150 are disposed on the first electrode 130 . In this case, the first electrode 130 is electrically connected to the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 . Here, the first electrode 130 may include at least one selected from copper (Cu), aluminum (Al), silver (Ag), and nickel (Ni).

複數個P型熱電支腳140及複數個N型熱電支腳150安置於第一電極130上。在此狀況下,P型熱電支腳140及N型熱電支腳150可經由焊接接合至第一電極130。 A plurality of P-type thermoelectric legs 140 and a plurality of N-type thermoelectric legs 150 are disposed on the first electrode 130 . In this case, the P-type thermoelectric legs 140 and the N-type thermoelectric legs 150 may be joined to the first electrode 130 by welding.

此處,P型熱電支腳140及N型熱電支腳150可為基於氟化鉍(Bi-Te)之熱電支腳,其包括鉍(Bi)及碲(Te)作為主要原料。P型熱電支腳140可為相對於100wt%之總重量而包括99wt%至99.999wt%的基於氟化鉍(Bi-Te)之主要原料及0.001wt%至1wt%之包括Bi或Te之混合物的熱電支腳,該主要原料包括選自銻(Sb)、鎳(Ni)、鋁(Al)、銅(Cu)、銀(Ag)、鉛(Pb)、硼(B)、鎵(Ga)、碲(Te)、鉍(Bi)及銦(In)中之至少一者。舉例而言,P型熱電支腳140可包括Bi-Se-Te作為主要原料,且相對於總重量,可進一步以範圍為0.001wt%至1wt%之量包括Bi或Te。N型熱電支腳150可為相對於100wt%之總重量而包括99wt%至99.999wt%的基於氟化鉍(Bi-Te)之主要原料及0.001wt%至1wt%之包括Bi或Te之混合物的熱電支腳,該主要原料包括選自硒(Se)、鎳(Ni)、鋁(Al)、銅(Cu)、銀(Ag)、鉛(Pb)、硼(B)、鎵(Ga)、碲(Te)、鉍(Bi)及銦(In)中之至少一者。舉例而言,N型熱電支腳150可包括Bi-Sb-Te作為主要原料,且相對於總重量,可進一步以範圍為0.001wt%至1wt%之量包括Bi或Te。 Here, the P-type thermoelectric legs 140 and the N-type thermoelectric legs 150 may be bismuth fluoride (Bi-Te)-based thermoelectric legs, which include bismuth (Bi) and tellurium (Te) as main raw materials. The P-type thermoelectric legs 140 may include 99 wt % to 99.999 wt % of a bismuth fluoride (Bi-Te)-based main raw material and 0.001 wt % to 1 wt % of a mixture including Bi or Te with respect to 100 wt % of the total weight The thermoelectric legs, the main raw materials include selected from antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga) , at least one of tellurium (Te), bismuth (Bi) and indium (In). For example, the P-type thermoelectric leg 140 may include Bi-Se-Te as a main raw material, and may further include Bi or Te in an amount ranging from 0.001 wt % to 1 wt % with respect to the total weight. The N-type thermoelectric legs 150 may include 99 wt % to 99.999 wt % of a bismuth fluoride (Bi-Te)-based main raw material and 0.001 wt % to 1 wt % of a mixture including Bi or Te with respect to a total weight of 100 wt % The thermoelectric legs, the main raw materials include selected from selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga) , at least one of tellurium (Te), bismuth (Bi) and indium (In). For example, the N-type thermoelectric leg 150 may include Bi-Sb-Te as a main raw material, and may further include Bi or Te in an amount ranging from 0.001 wt % to 1 wt % with respect to the total weight.

P型熱電支腳140及N型熱電支腳150可形成為塊體型或堆疊型。一般而言,塊體式P型熱電支腳140或塊體式N型熱電支腳150可經由如下製程獲得:熱處理熱電材料以製成鑄錠,將鑄錠粉碎並篩分以獲得熱電支腳粉末,燒結熱電支腳粉末且接著切割經燒結體。堆疊式P型熱電支腳140或堆疊式N型熱電支腳150可經由如下製程獲得:將包括熱電 材料之漿料塗覆於片狀基板上以形成單元部件且接著堆疊及切割單元部件。 The P-type thermoelectric legs 140 and the N-type thermoelectric legs 150 may be formed in a block type or a stacked type. In general, the bulk P-type thermoelectric legs 140 or the bulk N-type thermoelectric legs 150 can be obtained by the following process: heat-treating the thermoelectric material to form an ingot, pulverizing and sieving the ingot to obtain the thermoelectric leg powder, The thermoelectric leg powder is sintered and then the sintered body is cut. The stacked P-type thermoelectric legs 140 or the stacked N-type thermoelectric legs 150 can be obtained by the following process: A slurry of material is applied on a sheet substrate to form unit components and then the unit components are stacked and cut.

在此狀況下,一對P型熱電支腳140及N型熱電支腳150可具有相同的形狀及體積,或可具有不同的形狀及體積。舉例而言,由於P型熱電支腳140及N型熱電支腳150具有不同的導電特性,因此N型熱電支腳150之高度或橫截面積可不同於P型熱電支腳140之高度或橫截面積。 In this case, a pair of P-type thermoelectric legs 140 and N-type thermoelectric legs 150 may have the same shape and volume, or may have different shapes and volumes. For example, since the P-type thermoelectric leg 140 and the N-type thermoelectric leg 150 have different conductive properties, the height or cross-sectional area of the N-type thermoelectric leg 150 may be different from that of the P-type thermoelectric leg 140 . cross-sectional area.

根據本發明之一個例示性實施例的熱電元件之效能可由熱電效能指數表示。熱電效能指數(ZT)可由等式1表示。 The performance of a thermoelectric element according to an exemplary embodiment of the present invention can be represented by a thermoelectric performance index. The thermoelectric performance index (ZT) can be represented by Equation 1.

[等式1]ZT=α2.σ.T/k [Equation 1] ZT=α 2 . σ. T/k

在等式1中,α係指賽貝克係數[V/K],σ係指電導率[S/m],且α2σ係指功率因數[W/mK2]。T係指溫度且k係指熱導率[W/mK]。k可由a‧cp‧ρ表示。此處,a係指熱擴散率[cm2/S],cp係指比熱[J/gK],且ρ係指密度[g/cm3]。 In Equation 1, α refers to the Seebeck coefficient [V/K], σ refers to the conductivity [S/m], and α 2 σ refers to the power factor [W/mK 2 ]. T refers to temperature and k refers to thermal conductivity [W/mK]. k can be represented by a·cp·ρ. Here, a refers to thermal diffusivity [cm 2 /S], cp refers to specific heat [J/gK], and ρ refers to density [g/cm 3 ].

為了獲得熱電元件之熱電效能指數,可使用Z計來測量Z值(V/K),且可使用量測到之Z值來計算賽貝克指數(ZT)。 In order to obtain the thermoelectric performance index of the thermoelectric element, a Z meter can be used to measure the Z value (V/K), and the measured Z value can be used to calculate the Seebeck index (ZT).

P型熱電支腳140或N型熱電支腳150可具有圓柱形形狀、多邊形柱體形狀、橢圓形柱體形狀或其類似者。替代地,P型熱電支腳140或N型熱電支腳150可具有堆疊結構。舉例而言,P型熱電支腳或N型熱電支腳可經由將塗佈有半導體材料之複數個結構堆疊於片狀基板上及切割基板的方法形成。結果,有可能防止材料損耗且改善導電特性。 The P-type thermoelectric leg 140 or the N-type thermoelectric leg 150 may have a cylindrical shape, a polygonal cylinder shape, an elliptical cylinder shape, or the like. Alternatively, the P-type thermoelectric legs 140 or the N-type thermoelectric legs 150 may have a stacked structure. For example, P-type thermoelectric legs or N-type thermoelectric legs can be formed by stacking a plurality of structures coated with semiconductor material on a sheet substrate and cutting the substrate. As a result, it is possible to prevent material loss and improve conductive properties.

複數個第二電極160安置於複數個P型熱電支腳140及複數個N型熱電支腳150上。在此狀況下,複數個P型熱電支腳140及複數個N型熱電支腳150可經由焊接接合至第二電極160。此處,第二電極160可包括選自銅(Cu)、鋁(Al)、銀(Ag)及鎳(Ni)中之至少一者。 The plurality of second electrodes 160 are disposed on the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150 . In this case, the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150 can be joined to the second electrode 160 by welding. Here, the second electrode 160 may include at least one selected from copper (Cu), aluminum (Al), silver (Ag), and nickel (Ni).

第二樹脂層170安置於複數個第二電極160上。複數個第二金屬基板180安置於第二樹脂層170上。 The second resin layer 170 is disposed on the plurality of second electrodes 160 . A plurality of second metal substrates 180 are disposed on the second resin layer 170 .

第二金屬基板180安置於第二樹脂層170上以面向一個第 一金屬基板110。第二金屬基板180可由鋁、鋁合金、銅或銅合金製成。 The second metal substrate 180 is disposed on the second resin layer 170 to face a first A metal substrate 110 . The second metal substrate 180 may be made of aluminum, aluminum alloy, copper or copper alloy.

第一金屬基板110及第二金屬基板180可具有相同面積,且如上文所描述,當第三通孔113形成於第一金屬基板110中時,第一金屬基板110之面積可大於第二金屬基板180之面積。在此狀況下,第二金屬基板180之面積與第一金屬基板110之面積的比率之範圍可為0.50至0.95,較佳地,範圍為0.60至0.90,且更佳地,範圍為0.70至0.85。 The first metal substrate 110 and the second metal substrate 180 may have the same area, and as described above, when the third through holes 113 are formed in the first metal substrate 110, the area of the first metal substrate 110 may be larger than that of the second metal substrate The area of the substrate 180 . In this case, the ratio of the area of the second metal substrate 180 to the area of the first metal substrate 110 may be in the range of 0.50 to 0.95, preferably in the range of 0.60 to 0.90, and more preferably in the range of 0.70 to 0.85 .

在另一例示性實施例中,當第二金屬基板180應用於需要相對較大面積之應用領域中時或當熱變形之影響需要進一步最小化時,第二金屬基板180可提供為相對於一個第一金屬基板110而分成複數個片件。在此狀況下,第二金屬基板180之面積與第一金屬基板110之面積的比率之範圍可為0.10至0.50,較佳地,範圍為0.15至0.45,且更佳地,範圍為0.2至0.40。舉例而言,兩個第二金屬基板180可安置於一個第一金屬基板110上。此處,第二金屬基板180可安置成彼此間隔開。舉例而言,第一金屬基板110可具有100mm×100mm之面積,第二金屬基板180可各自具有45mm×100mm之面積,且彼此間隔開之第二金屬基板180之間的間隔可為約10mm。 In another exemplary embodiment, when the second metal substrate 180 is applied in an application field requiring a relatively large area or when the influence of thermal deformation needs to be further minimized, the second metal substrate 180 may be provided relative to a The first metal substrate 110 is divided into a plurality of pieces. In this case, the ratio of the area of the second metal substrate 180 to the area of the first metal substrate 110 may range from 0.10 to 0.50, preferably, from 0.15 to 0.45, and more preferably, from 0.2 to 0.40 . For example, two second metal substrates 180 may be disposed on one first metal substrate 110 . Here, the second metal substrates 180 may be disposed to be spaced apart from each other. For example, the first metal substrates 110 may have an area of 100 mm×100 mm, the second metal substrates 180 may each have an area of 45 mm×100 mm, and the interval between the second metal substrates 180 spaced apart from each other may be about 10 mm.

作為另一實例,四個第二金屬基板180可安置於一個第一金屬基板110上。在此狀況下,第二金屬基板180可安置成彼此間隔開。舉例而言,第一金屬基板110可具有100mm×100mm之面積,第二金屬基板180可各自具有45mm×45mm之面積,且彼此間隔開之第二金屬基板180之間的間隔可為約10mm。 As another example, four second metal substrates 180 may be disposed on one first metal substrate 110 . In this case, the second metal substrates 180 may be disposed to be spaced apart from each other. For example, the first metal substrates 110 may have an area of 100 mm×100 mm, the second metal substrates 180 may each have an area of 45 mm×45 mm, and the interval between the second metal substrates 180 spaced apart from each other may be about 10 mm.

作為又一實例,複數個第二金屬基板180之間的間隔可小於5mm。舉例而言,第一金屬基板110可具有100mm×100mm之面積,第二金屬基板180可各自具有49.5mm×49.5mm之面積,且複數個第二金屬基板之間的間隔可為約10mm。連接複數個第二金屬基板180之連接部件230可形成為具有2mm之寬度。 As yet another example, the interval between the plurality of second metal substrates 180 may be less than 5 mm. For example, the first metal substrate 110 may have an area of 100 mm×100 mm, the second metal substrates 180 may each have an area of 49.5 mm×49.5 mm, and the interval between the plurality of second metal substrates may be about 10 mm. The connecting member 230 connecting the plurality of second metal substrates 180 may be formed to have a width of 2 mm.

在此狀況下,第一金屬基板110可具有範圍為0.1mm至2mm之厚度。此外,第二金屬基板180可具有大於或等於第一金屬基板110 之厚度的厚度。當第二金屬基板180之厚度大於第一金屬基板110之厚度時,第二金屬基板180之厚度可為第一金屬基板110之厚度的1.1至2.0倍。此處,由於第二金屬基板180可能會被耦接部件190彎曲,因此第二金屬基板180可形成為比第一金屬基板110厚。 In this case, the first metal substrate 110 may have a thickness ranging from 0.1 mm to 2 mm. In addition, the second metal substrate 180 may have greater than or equal to the first metal substrate 110 the thickness of the thickness. When the thickness of the second metal substrate 180 is greater than that of the first metal substrate 110 , the thickness of the second metal substrate 180 may be 1.1 to 2.0 times the thickness of the first metal substrate 110 . Here, since the second metal substrate 180 may be bent by the coupling part 190 , the second metal substrate 180 may be formed thicker than the first metal substrate 110 .

至少一個通孔181形成於第二金屬基板180中。在此狀況下,第二通孔181可形成為佔據有效區B1之一部分,該有效區為在每一第二金屬基板180之周邊區B2以內的區。此處,有效區可定義為安置有能夠實質上實施帕爾貼效應或賽貝克效應之複數個P型熱電支腳140及複數個N型熱電支腳150的區。端子電極可安置於有效區中。端子電極可自有效區延伸以便連接至外部端子或導線,且可電連接至複數個P型熱電支腳140及複數個N型熱電支腳150中之至少一者或複數個第一電極130及複數個第二電極160中之至少一者。複數個第一電極130中之每一者及複數個第二電極160中之每一者可在有效區中彼此豎直地重疊。形成於第二金屬基板180中之第二通孔181可形成為與第二金屬基板180之周邊部分隔開一定距離,且當形成複數個第二通孔181時,第二通孔181可彼此與第二金屬基板180之周邊部分隔開相同距離。第二通孔181可形成為與第一通孔111重疊,且耦接部件190可穿過彼此對應之第一通孔111及第二通孔181。如上文所描述,耦接部件190可固定第一金屬基板110及第二金屬基板180,以便佔據第一金屬基板110之有效區A1及第二金屬基板180之有效區B1的一部分,藉此減少熱變形且防止應力集中於接合部分處。 At least one through hole 181 is formed in the second metal substrate 180 . In this case, the second through holes 181 may be formed to occupy a portion of the active area B1 , which is an area within the peripheral area B2 of each of the second metal substrates 180 . Here, the active area can be defined as the area in which the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150 that can substantially implement the Peltier effect or the Seebeck effect are disposed. Terminal electrodes may be disposed in the active area. The terminal electrodes may extend from the active area for connection to external terminals or wires, and may be electrically connected to at least one of the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150 or the plurality of first electrodes 130 and At least one of the plurality of second electrodes 160 . Each of the plurality of first electrodes 130 and each of the plurality of second electrodes 160 may vertically overlap each other in the active area. The second through holes 181 formed in the second metal substrate 180 may be formed at a distance from the peripheral portion of the second metal substrate 180, and when a plurality of second through holes 181 are formed, the second through holes 181 may be formed from each other It is spaced apart from the peripheral portion of the second metal substrate 180 by the same distance. The second through hole 181 may be formed to overlap with the first through hole 111 , and the coupling member 190 may pass through the first through hole 111 and the second through hole 181 corresponding to each other. As described above, the coupling member 190 can fix the first metal substrate 110 and the second metal substrate 180 so as to occupy a part of the active area A1 of the first metal substrate 110 and the active area B1 of the second metal substrate 180 , thereby reducing Thermal deformation and prevention of stress concentration at the joint portion.

儘管未展示,但當該等基板之周邊區A2及B2的部分(亦即,該等基板之邊緣區)耦接以免影響第一金屬基板110之有效區A1及第二金屬基板180之有效區B1時,該等基板之間的固定力可相對較高。然而,在使用熱電模組曝露於100℃或高於100℃之高溫環境之賽貝克效應的應用領域中或在使用產生100℃或高於100℃之熱量之帕爾貼效應的應用領域中,由低溫部分及高溫部分接收之熱量之間的差可導致對熱電模組之損壞。舉例而言,在使用賽貝克效應之熱電模組的狀況下,高溫部分之基板因熱量而膨脹,且低溫部分之基板藉由分開的冷卻部件收縮,使得熱應力集中 於基板之邊緣區中。在此狀況下,所產生之熱應力可傳輸至安置於基板之間的電極、熱電支腳及樹脂層,且因此可能會由於弱界面而產生分層及開裂。結果,熱電效率可能會由於對熱電模組之損壞而迅速降低。儘管未展示,但密封部件可進一步安置於第一金屬基板110與第二金屬基板180之間。密封部件可安置於第一金屬基板110與複數個第二金屬基板180之間的第一電極130、P型熱電支腳140、N型熱電支腳150及第二電極160之側表面上。因此,第一電極130、P型熱電支腳140、N型熱電支腳150及第二電極160可被密封以免受外部濕氣、熱量及污染。此處,密封部件可包括:密封殼,其安置成與複數個第一電極130之最外部分、複數個P型熱電支腳140及複數個N型熱電支腳150之最外部分以及複數個第二電極160之最外部分的側表面隔開一定距離;安置於密封殼與第一金屬基板110之間的密封材料;及安置於密封殼與第二金屬基板180之間的密封材料。如上文所描述,密封殼可經由密封材料與第一金屬基板110及第二金屬基板180接觸。因此,當密封殼與第一金屬基板110及第二金屬基板180直接接觸時,可經由密封殼發生熱傳導,藉此防止第一金屬基板110與第二金屬基板180之間的溫度差減小。此處,密封材料可包括選自環氧樹脂及聚矽氧樹脂中之至少一者,或可包括兩個表面均塗佈有選自環氧樹脂及聚矽氧樹脂中之至少一者的膠帶。密封材料可用以密封在密封殼與第一金屬基板110之間的間隙及在密封殼與第二金屬基板180之間的間隙,可增加相對於第一電極130、P型熱電支腳140、N型熱電支腳150及第二電極160之密封效應,且可與修整材料、修整層、防水材料、防水層及其類似者互換地使用。此處,密封在密封殼與第一金屬基板110之間的間隙之密封材料可安置於第一金屬基板110之上表面上,且密封在密封殼與第二金屬基板180之間的間隙之密封材料可安置於第二金屬基板180之側表面上。為此,第一金屬基板110之面積可大於第二金屬基板180之總面積。同時,密封殼可具有導引溝槽,連接至電極之引線係經由該溝槽引出。為此,密封殼可為由塑膠或其類似者製成之射出成型物件,且可與密封蓋互換地使用。然而,密封部件之以上描述僅為例示性的,且密封部件可以各種形式修改。儘管未展示,但可進 一步提供熱絕緣材料以環繞密封部件。替代地,密封部件可包括熱絕緣組件。 Although not shown, when the portions of the peripheral areas A2 and B2 of the substrates (ie, the peripheral areas of the substrates) are coupled so as not to affect the active area A1 of the first metal substrate 110 and the active area of the second metal substrate 180 At B1, the fixing force between the substrates can be relatively high. However, in applications using the Seebeck effect of a thermoelectric module exposed to a high temperature environment of 100°C or higher, or in applications using the Peltier effect generating heat at 100°C or higher, The difference between the heat received by the low temperature part and the high temperature part can cause damage to the thermoelectric module. For example, in the case of a thermoelectric module using the Seebeck effect, the substrate of the high-temperature portion expands due to heat, and the substrate of the low-temperature portion is shrunk by the separate cooling member, so that thermal stress is concentrated in the edge region of the substrate. In this case, the generated thermal stress can be transmitted to the electrodes, the thermoelectric legs and the resin layer disposed between the substrates, and thus delamination and cracking may occur due to the weak interface. As a result, the thermoelectric efficiency may drop rapidly due to damage to the thermoelectric module. Although not shown, the sealing member may be further disposed between the first metal substrate 110 and the second metal substrate 180 . The sealing member may be disposed on the side surfaces of the first electrode 130 , the P-type thermoelectric legs 140 , the N-type thermoelectric legs 150 and the second electrodes 160 between the first metal substrate 110 and the plurality of second metal substrates 180 . Therefore, the first electrode 130, the P-type thermoelectric legs 140, the N-type thermoelectric legs 150, and the second electrode 160 can be sealed from external moisture, heat, and contamination. Here, the sealing member may include: a sealing shell disposed to be connected to the outermost parts of the plurality of first electrodes 130, the outermost parts of the plurality of P-type thermoelectric legs 140 and the plurality of N-type thermoelectric legs 150, and a plurality of The side surfaces of the outermost portion of the second electrode 160 are separated by a distance; a sealing material disposed between the sealing case and the first metal substrate 110 ; and a sealing material disposed between the sealing case and the second metal substrate 180 . As described above, the sealing case may be in contact with the first metal substrate 110 and the second metal substrate 180 through the sealing material. Therefore, when the sealing case is in direct contact with the first metal substrate 110 and the second metal substrate 180 , heat conduction can occur through the sealing case, thereby preventing the temperature difference between the first metal substrate 110 and the second metal substrate 180 from being reduced. Here, the sealing material may include at least one selected from epoxy resin and polysiloxane, or may include an adhesive tape whose both surfaces are coated with at least one selected from epoxy resin and polysiloxane . The sealing material can be used to seal the gap between the sealing shell and the first metal substrate 110 and the gap between the sealing shell and the second metal substrate 180, and can increase relative to the first electrode 130, the P-type thermoelectric legs 140, the N type thermoelectric leg 150 and the sealing effect of the second electrode 160, and can be used interchangeably with trim material, trim layer, waterproof material, waterproof layer, and the like. Here, the sealing material for sealing the gap between the sealing case and the first metal substrate 110 may be disposed on the upper surface of the first metal substrate 110, and the sealing material for sealing the gap between the sealing case and the second metal substrate 180 Materials may be disposed on the side surfaces of the second metal substrate 180 . To this end, the area of the first metal substrate 110 may be larger than the total area of the second metal substrate 180 . Meanwhile, the sealing case may have a guide groove through which the lead wires connected to the electrodes are led out. To this end, the sealing shell can be an injection-molded object made of plastic or the like, and can be used interchangeably with the sealing cap. However, the above description of the sealing member is merely exemplary, and the sealing member may be modified in various forms. Although not shown, it is possible to enter A thermal insulation material is provided in one step to surround the sealing member. Alternatively, the sealing member may include a thermally insulating assembly.

參看圖7,在第一金屬基板110中,第一孔配置區112鄰近於第一通孔111而形成。第一孔配置區112可鄰近於第一通孔111,且可界定為由連接鄰近電極之表面之虛擬線201、202、203及204形成的空間。第一孔配置區112可形成為具有多邊形形狀,且較佳地,可形成為具有四邊形形狀。在此狀況下,複數個第一電極130可能不安置於第一孔配置區112中。此外,第二孔配置區182形成於第二金屬基板180之面向第一金屬基板110的表面中,以便鄰近於第二通孔181。第二孔配置區182可鄰近於第二通孔181,且可界定為由連接鄰近電極之表面之虛擬線211、212、213及214形成的空間。第二孔配置區182可形成為具有多邊形形狀,且較佳地,可形成為具有四邊形形狀。在此狀況下,複數個第二電極160可能不安置於第二孔配置區182中。 Referring to FIG. 7 , in the first metal substrate 110 , the first hole arrangement region 112 is formed adjacent to the first through hole 111 . The first hole arrangement region 112 may be adjacent to the first through hole 111, and may be defined as a space formed by dummy lines 201, 202, 203, and 204 connecting surfaces of adjacent electrodes. The first hole arrangement region 112 may be formed to have a polygonal shape, and preferably, may be formed to have a quadrangular shape. In this case, the plurality of first electrodes 130 may not be disposed in the first hole arrangement region 112 . In addition, the second hole arrangement region 182 is formed in the surface of the second metal substrate 180 facing the first metal substrate 110 so as to be adjacent to the second through holes 181 . The second hole arrangement region 182 may be adjacent to the second through hole 181, and may be defined as a space formed by dummy lines 211, 212, 213, and 214 connecting surfaces of adjacent electrodes. The second hole arrangement region 182 may be formed to have a polygonal shape, and preferably, may be formed to have a quadrangular shape. In this case, the plurality of second electrodes 160 may not be disposed in the second hole arrangement region 182 .

耦接部件190固定第一金屬基板110及至少一個第二金屬基板180。在此狀況下,耦接部件190之一部分穿過第二通孔181及第一通孔111,且其末端部分插入耦接至冷卻單元C之孔20h。 The coupling member 190 fixes the first metal substrate 110 and the at least one second metal substrate 180 . In this state, a portion of the coupling member 190 passes through the second through hole 181 and the first through hole 111 , and the end portion thereof is inserted into the hole 20h coupled to the cooling unit C. As shown in FIG.

參看圖4,耦接部件190可包括第一部件191及第二部件192。第一部件191穿過第二通孔181及第一通孔111,且其一個末端部分嵌入且固定於冷卻單元C中。在此狀況下,螺紋可形成於第一部件191之外圓周上。第一部件191可具有小於或等於第二通孔181及第一通孔111之直徑的直徑。 Referring to FIG. 4 , the coupling part 190 may include a first part 191 and a second part 192 . The first component 191 passes through the second through hole 181 and the first through hole 111 , and one end portion thereof is embedded and fixed in the cooling unit C. As shown in FIG. In this case, threads may be formed on the outer circumference of the first part 191 . The first part 191 may have a diameter smaller than or equal to diameters of the second through hole 181 and the first through hole 111 .

第二部件192可自第一部件191之另一末端部分延伸以具有大於第二通孔181之直徑的直徑。第二部件192防止第二金屬基板180與第一金屬基板110分離。 The second part 192 may extend from the other end portion of the first part 191 to have a diameter larger than that of the second through hole 181 . The second member 192 prevents the second metal substrate 180 from being separated from the first metal substrate 110 .

當提供複數個第二金屬基板180時,熱絕緣材料200可安置於複數個第二金屬基板180之間的分離空間中。此處,熱絕緣材料200可包括選自環氧樹脂、聚矽氧樹脂及陶瓷棉當中之至少一者,且熱絕緣材料200可與上文所描述之密封部件及下文待描述之連接部件230互換地使用。 When the plurality of second metal substrates 180 are provided, the thermal insulating material 200 may be disposed in the separation space between the plurality of second metal substrates 180 . Here, the thermal insulating material 200 may include at least one selected from epoxy resin, polysiloxane resin and ceramic wool, and the thermal insulating material 200 may be combined with the sealing member described above and the connecting member 230 to be described below. used interchangeably.

散熱片220可安置於第二金屬基板180上。舉例而言,散熱片220可安置於第二金屬基板180之兩個表面中的與安置有第二樹脂層170之表面相對的表面上。在此狀況下,第二金屬基板180及散熱片220可一體成型。儘管未展示,但散熱片可形成於第一金屬基板110上。散熱片220可具有如下結構:各自具有板形狀之複數個扁平基板221安置為平行的,且空氣通道形成於扁平基板221之間的空間中。在此狀況下,扁平基板221之間的間隔可小於10mm。 The heat sink 220 may be disposed on the second metal substrate 180 . For example, the heat sink 220 may be disposed on the surface opposite to the surface on which the second resin layer 170 is disposed among the two surfaces of the second metal substrate 180 . In this case, the second metal substrate 180 and the heat sink 220 can be integrally formed. Although not shown, a heat sink may be formed on the first metal substrate 110 . The heat sink 220 may have a structure in which a plurality of flat substrates 221 each having a plate shape are arranged in parallel, and air passages are formed in spaces between the flat substrates 221 . In this case, the interval between the flat substrates 221 may be less than 10 mm.

在下文中,將參看圖5及圖6描述根據熱電模組之另一例示性實施例的熱電模組20。 Hereinafter, a thermoelectric module 20 according to another exemplary embodiment of the thermoelectric module will be described with reference to FIGS. 5 and 6 .

圖5為根據本發明之第二例示性實施例的熱電模組之透視圖,且圖6為說明根據本發明之第二例示性實施例之熱電模組安裝於冷卻單元中的狀態之側視圖。 5 is a perspective view of a thermoelectric module according to a second exemplary embodiment of the present invention, and FIG. 6 is a side view illustrating a state in which the thermoelectric module according to the second exemplary embodiment of the present invention is installed in a cooling unit .

參看圖5及圖6,熱電模組20可進一步包括連接複數個第二金屬基板180之連接部件230。 Referring to FIG. 5 and FIG. 6 , the thermoelectric module 20 may further include a connecting member 230 for connecting the plurality of second metal substrates 180 .

連接部件230可為接合複數個第二金屬基板180之黏膠。在此狀況下,在熱電模組20中,可省略對複數個第二金屬基板180之間的分離空間之熱絕緣處理,但如上文所描述,熱絕緣材料200可安置於第一金屬基板110與第二金屬基板180之間。 The connecting member 230 may be an adhesive for bonding the plurality of second metal substrates 180 . In this case, in the thermoelectric module 20, the thermal insulation treatment of the separated spaces between the plurality of second metal substrates 180 can be omitted, but as described above, the thermal insulating material 200 can be disposed on the first metal substrate 110 and the second metal substrate 180 .

儘管未展示,但在熱電模組中,可省略連接部件230,且複數個第二金屬基板180藉由自複數個第二金屬基板180中之每一者之一部分延伸的延伸部件連接。 Although not shown, in the thermoelectric module, the connecting member 230 may be omitted, and the plurality of second metal substrates 180 are connected by extension members extending partially from each of the plurality of second metal substrates 180 .

在此狀況下,延伸部件可形成為具有小於第二金屬基板180之厚度的厚度。舉例而言,第二金屬基板180可具有範圍為0.2mm至4mm之厚度,且延伸部件可具有範圍為0.1mm至2mm之厚度。此處,複數個第二金屬基板之厚度與延伸部件之厚度的比率之範圍可為1至2。 In this case, the extension part may be formed to have a thickness smaller than that of the second metal substrate 180 . For example, the second metal substrate 180 may have a thickness ranging from 0.2 mm to 4 mm, and the extension member may have a thickness ranging from 0.1 mm to 2 mm. Here, the ratio of the thickness of the plurality of second metal substrates to the thickness of the extension member may range from 1 to 2.

相較於第二金屬基板180之一個表面,連接部件230之一個表面可進一步凹入以形成溝槽241。在此狀況下,連接部件230可形成為具有十字形狀。舉例而言,當第一金屬基板110具有100mm×100mm之面 積且第二金屬基板180具有45mm×45mm之面積及範圍為0.2mm至4mm之厚度時,連接部件230可具有10mm之寬度及範圍為0.1mm至2mm之厚度,且由連接部件230形成之溝槽可具有範圍為0.1mm至2mm之深度。如上文所描述,由於溝槽係因連接部件230與第二金屬基板180之間的厚度差而形成,因此第二金屬基板180之中心部分的厚度可減小,且第二金屬基板180之熱變形可減輕。 Compared with one surface of the second metal substrate 180 , one surface of the connecting member 230 may be further recessed to form the groove 241 . In this case, the connection part 230 may be formed to have a cross shape. For example, when the first metal substrate 110 has a surface of 100mm×100mm When the second metal substrate 180 has an area of 45 mm×45 mm and a thickness ranging from 0.2 mm to 4 mm, the connecting member 230 may have a width of 10 mm and a thickness ranging from 0.1 mm to 2 mm, and the groove formed by the connecting member 230 The grooves may have a depth in the range of 0.1 mm to 2 mm. As described above, since the grooves are formed due to the difference in thickness between the connecting member 230 and the second metal substrate 180 , the thickness of the central portion of the second metal substrate 180 can be reduced, and the heat of the second metal substrate 180 can be reduced. Deformation can be reduced.

在本說明書中,安置於彼此間隔開之複數個第二金屬基板180之間以連接複數個第二金屬基板180的熱絕緣材料200、連接部件230及延伸部件可統稱為連接部件,且連接部件可為包括絕緣材料之絕緣部件。 In this specification, the thermal insulating material 200 , the connecting part 230 and the extending part disposed between the plurality of second metal substrates 180 spaced apart from each other to connect the plurality of second metal substrates 180 may be collectively referred to as a connecting part, and the connecting part It may be an insulating member comprising insulating material.

在下文中,將參看圖7至圖11描述根據各種例示性實施例之配置複數個第一電極130及複數個第二電極160的方法。 Hereinafter, a method of configuring the plurality of first electrodes 130 and the plurality of second electrodes 160 according to various exemplary embodiments will be described with reference to FIGS. 7 to 11 .

圖7為說明根據例示性實施例之將第一電極及第二電極配置於第一金屬基板110及第二金屬基板180上的方法之視圖。圖8為說明圖7中所展示之複數個第一電極及複數個第二電極彼此重疊的狀態之視圖。圖9至圖11為說明根據各種例示性實施例之將第一電極及第二電極配置於第一金屬基板110及第二金屬基板180上的方法之視圖。 FIG. 7 is a view illustrating a method of disposing the first electrode and the second electrode on the first metal substrate 110 and the second metal substrate 180 according to an exemplary embodiment. FIG. 8 is a view illustrating a state in which the plurality of first electrodes and the plurality of second electrodes shown in FIG. 7 overlap each other. FIGS. 9-11 are views illustrating a method of disposing the first electrode and the second electrode on the first metal substrate 110 and the second metal substrate 180 according to various exemplary embodiments.

參看圖7至圖11,複數個第一電極130安置於第一金屬基板110之面向第二金屬基板180的一個表面上,且複數個第二電極160安置於第二金屬基板180之面向第一金屬基板110的一個表面上。在此狀況下,複數個第一電極130可安置於第一金屬基板110上,除第一孔配置區112之外,且複數個第二電極可安置於第二金屬基板180上,除第二孔配置區182之外。第一孔配置區112之位置對應於第二孔配置區182之位置。 7 to 11, a plurality of first electrodes 130 are disposed on a surface of the first metal substrate 110 facing the second metal substrate 180, and a plurality of second electrodes 160 are disposed on a surface of the second metal substrate 180 facing the first on one surface of the metal substrate 110 . In this case, a plurality of first electrodes 130 may be disposed on the first metal substrate 110, except for the first hole arrangement region 112, and a plurality of second electrodes may be disposed on the second metal substrate 180, except for the second outside the hole arrangement area 182 . The position of the first hole arrangement area 112 corresponds to the position of the second hole arrangement area 182 .

此處,複數個第一電極130及複數個第二電極160中之每一者形成為具有矩形形狀,且其長寬度W1及短寬度W2區別於彼此。在此狀況下,第一電極130及第二電極160之長寬度W1與短寬度W2的比率可根據待提供之支腳的形狀而變化。較佳地,第一電極130及第二電極160之長寬度W1與短寬度W2的比率之範圍可為2.05至4.50。在本說明書中,長寬度之方向可被稱作長度方向。 Here, each of the plurality of first electrodes 130 and the plurality of second electrodes 160 is formed to have a rectangular shape, and its long width W1 and short width W2 are different from each other. In this case, the ratio of the long width W1 to the short width W2 of the first electrode 130 and the second electrode 160 may vary according to the shape of the legs to be provided. Preferably, the ratio of the long width W1 to the short width W2 of the first electrode 130 and the second electrode 160 may range from 2.05 to 4.50. In this specification, the direction of the length and width may be referred to as the length direction.

儘管未展示,但當通孔111及181未形成於第一金屬基板110及第二金屬基板180之有效區中時,複數個第一電極130可全部經安置使得其長度方向在第一方向Y上定向。在此狀況下,在複數個第二電極160當中,以彼此相對之兩行或兩列安置於有效區之邊緣區中的至少一些電極可在垂直於第一方向Y之第二方向X上安置,且剩餘電極可自複數個第一電極130移動電極之短寬度W2,使得其至少部分可彼此重疊。因此,第一金屬基板110與第二金屬基板180之間的複數個P型熱電支腳及複數個N型熱電支腳可全部串聯連接。 Although not shown, when the through holes 111 and 181 are not formed in the active areas of the first metal substrate 110 and the second metal substrate 180, the plurality of first electrodes 130 may all be disposed such that their length directions are in the first direction Y up orientation. In this case, among the plurality of second electrodes 160, at least some electrodes disposed in the edge region of the active area in two rows or two columns opposite to each other may be disposed in the second direction X perpendicular to the first direction Y , and the remaining electrodes can be moved from the plurality of first electrodes 130 by a short width W2 of the electrodes so that they can at least partially overlap each other. Therefore, the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs between the first metal substrate 110 and the second metal substrate 180 can all be connected in series.

當根據本發明之例示性實施例,至少一個通孔111或181形成於第一金屬基板110或第二金屬基板180之有效區中時,在第一電極130及複數個第二電極160當中,除邊緣區中之電極之外的電極可經安置使得其長度方向以在第一方向Y上及垂直於第一方向Y之第二方向X上定向而混合。 When at least one through hole 111 or 181 is formed in the active area of the first metal substrate 110 or the second metal substrate 180 according to an exemplary embodiment of the present invention, among the first electrode 130 and the plurality of second electrodes 160, The electrodes other than the electrodes in the edge regions may be positioned such that their lengths are mixed with orientation in a first direction Y and a second direction X perpendicular to the first direction Y.

在此狀況下,在複數個第一電極130或複數個第二電極160當中,除邊緣區中之電極之外,至少兩個電極可在垂直於第一方向Y之第二方向X上安置,且剩餘電極可在垂直於第二方向X之第一方向Y上安置。 In this case, among the plurality of first electrodes 130 or the plurality of second electrodes 160, except for the electrodes in the edge region, at least two electrodes may be disposed in the second direction X perpendicular to the first direction Y, And the remaining electrodes may be disposed in the first direction Y perpendicular to the second direction X.

鄰近於第一孔配置區112或第二孔配置區182之至少一個電極可經安置使得其長度方向在第二方向X上定向,且鄰近於至少一個電極之另一電極亦可經安置使得其長度方向在第二方向X上定向。在此狀況下,至少兩個第一電極130及至少兩個第二電極160可彼此不重疊,或其至少部分可彼此重疊。 At least one electrode adjacent to the first hole configuration region 112 or the second hole configuration region 182 may be positioned such that its length direction is oriented in the second direction X, and the other electrode adjacent to the at least one electrode may also be positioned such that it is The length direction is oriented in the second direction X. In this case, the at least two first electrodes 130 and the at least two second electrodes 160 may not overlap each other, or may at least partially overlap each other.

具體而言,鄰近於第一孔配置區112之複數個第一電極130中的至少兩個第一電極130a及130b可經安置使得其長度方向在第二方向X上定向。剩餘第一電極130可經安置使得其長度方向在第一方向Y上定向。 Specifically, at least two of the first electrodes 130a and 130b of the plurality of first electrodes 130 adjacent to the first hole arrangement region 112 may be disposed such that their length directions are oriented in the second direction X. The remaining first electrodes 130 may be disposed such that their lengths are oriented in the first direction Y.

在此狀況下,鄰近於第二孔配置區182之複數個第二電極160中的至少兩個第二電極160a及160b可在第二方向X上安置。此外, 安置於有效區之邊緣處的複數個第二電極160c之兩個相對列可經安置使得其長度方向在第二方向X上定向。剩餘第二電極160可經安置使得其長度方向在第一方向Y上定向。在此狀況下,在第二方向X上安置之第一電極130a及130b與在第二方向X上安置之第二電極160a及160b可彼此不重疊或可經安置使得其至少部分彼此重疊。此處,複數個第一電極130及複數個第二電極160之配置形式可彼此互換地應用。 In this case, at least two second electrodes 160a and 160b among the plurality of second electrodes 160 adjacent to the second hole arrangement region 182 may be disposed in the second direction X. As shown in FIG. also, The two opposing columns of the plurality of second electrodes 160c disposed at the edges of the active area may be disposed such that their lengths are oriented in the second direction X. FIG. The remaining second electrodes 160 may be disposed such that their lengths are oriented in the first direction Y. In this case, the first electrodes 130a and 130b disposed in the second direction X and the second electrodes 160a and 160b disposed in the second direction X may not overlap each other or may be disposed such that they at least partially overlap each other. Here, the configuration forms of the plurality of first electrodes 130 and the plurality of second electrodes 160 can be used interchangeably with each other.

更具體而言,如圖8中所展示,除邊緣區中之第一電極130之外,複數個第一電極130中之至少兩者可在第二方向X上安置,使得其至少一部分與虛擬空間H1或H2重疊,該虛擬空間藉由自界定第一孔配置區112之虛擬線201、202、203及204延伸的延伸線形成。除邊緣區中之第二電極160之外,複數個第二電極160中之至少兩者可在第二方向X上安置,使得其至少一部分與虛擬空間H3或H4重疊,該虛擬空間藉由自界定第二孔配置區182之虛擬線211、212、213及214延伸的延伸線形成。因此,複數個P型熱電支腳及複數個N型熱電支腳可最佳安置於形成有每一孔配置區之有限空間中。此處,在第二方向X上安置之電極的數目可根據第一孔配置區112及第二孔配置區182之數目、位置及形狀而增加。在此狀況下,在第二方向X上安置之電極的數目可為兩個之倍數,且在第二方向X上安置之電極中的至少兩者可經安置使得至少一部分因此與空間H1或H4重疊。 More specifically, as shown in FIG. 8, in addition to the first electrode 130 in the edge region, at least two of the plurality of first electrodes 130 may be disposed in the second direction X such that at least a portion thereof is aligned with the virtual The space H1 or H2 overlaps, and the virtual space is formed by the extension lines extending from the virtual lines 201 , 202 , 203 and 204 that define the first hole arrangement region 112 . Except for the second electrode 160 in the edge region, at least two of the plurality of second electrodes 160 may be disposed in the second direction X such that at least a part thereof overlaps with the virtual space H3 or H4, which is formed by freeing Extension lines extending from the dummy lines 211 , 212 , 213 and 214 defining the second hole arrangement region 182 are formed. Therefore, the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs can be optimally placed in the limited space where each hole arrangement area is formed. Here, the number of electrodes disposed in the second direction X may be increased according to the number, position and shape of the first hole arrangement region 112 and the second hole arrangement region 182 . In this case, the number of electrodes disposed in the second direction X may be a multiple of two, and at least two of the electrodes disposed in the second direction X may be disposed such that at least a portion is thus connected to the space H1 or H4 overlapping.

在本說明書中,複數個第一電極130及複數個第二電極160之電極配置形式可彼此互換地應用,且第一方向Y及第二方向X不限於此。 In this specification, the electrode configuration forms of the plurality of first electrodes 130 and the plurality of second electrodes 160 can be interchangeably applied to each other, and the first direction Y and the second direction X are not limited thereto.

參看圖9,在複數個第一電極130當中,鄰近於第一孔配置區112之兩個第一電極130d及130f可經安置使得其長度方向在第二方向X上定向,且鄰近於兩個第一電極130d及130f之兩個第一電極130c及130e亦可在第二方向X上安置,使得其長度方向相同。剩餘第一電極130可經安置使得其長度方向在第一方向Y上定向。 9, among the plurality of first electrodes 130, two first electrodes 130d and 130f adjacent to the first hole arrangement region 112 may be disposed such that their length directions are oriented in the second direction X, and are adjacent to two The two first electrodes 130c and 130e of the first electrodes 130d and 130f may also be arranged in the second direction X so that their length directions are the same. The remaining first electrodes 130 may be disposed such that their lengths are oriented in the first direction Y.

在此狀況下,在複數個第二電極160當中,鄰近於第二孔配 置區182之兩個第二電極160d及160e可經安置使得其長度方向在第二方向X上定向,且鄰近於第二孔配置區182之另外兩個第二電極160f及160g亦可在第二方向X上安置,使得其長度方向相同。此外,以彼此相對之兩列安置於邊緣區中的第二電極160h可經安置使得其長度方向在第二方向上定向。剩餘第二電極160可經安置使得其長度方向在第一方向Y上定向。 In this case, among the plurality of second electrodes 160, adjacent to the second hole The two second electrodes 160d and 160e of the placement region 182 may be placed such that their length directions are oriented in the second direction X, and the other two second electrodes 160f and 160g adjacent to the second hole placement region 182 may also be placed in the second direction X. They are placed in the two directions X, so that their length directions are the same. Furthermore, the second electrodes 160h disposed in the edge region in two rows opposite to each other may be disposed such that their lengths are oriented in the second direction. The remaining second electrodes 160 may be disposed such that their lengths are oriented in the first direction Y.

參看圖10,複數個第一通孔111及複數個第二通孔181可形成於第一金屬基板110及第二金屬基板180中。因此,亦可形成複數個第一孔配置區112及複數個第二孔配置區182。在此狀況下,在複數個第一電極130當中,鄰近於第一孔配置區112之兩個第一電極130g及130h可經安置使得其長度方向在第二方向X上定向,且鄰近於兩個第一電極130g及130h之兩個第一電極130i及130j亦可在第二方向X上安置,使得其長度方向相同。在此狀況下,可形成複數個第一孔配置區112,且數目為兩個之倍數的複數個第一電極130可安置成面向第二方向X。更具體而言,複數個第一電極130當中之至少八個第一電極130g至130n可安置成面向第二方向X。此外,剩餘第一電極130可經安置使得其長度方向在第一方向Y上定向。 Referring to FIG. 10 , a plurality of first through holes 111 and a plurality of second through holes 181 may be formed in the first metal substrate 110 and the second metal substrate 180 . Therefore, a plurality of first hole arrangement regions 112 and a plurality of second hole arrangement regions 182 can also be formed. In this case, among the plurality of first electrodes 130, the two first electrodes 130g and 130h adjacent to the first hole arrangement region 112 may be disposed such that their length directions are oriented in the second direction X, and adjacent to the two The two first electrodes 130i and 130j of the first electrodes 130g and 130h can also be arranged in the second direction X so that their length directions are the same. In this case, a plurality of first hole configuration regions 112 may be formed, and a plurality of first electrodes 130 , which are a multiple of two, may be arranged to face the second direction X. As shown in FIG. More specifically, at least eight first electrodes 130g to 130n among the plurality of first electrodes 130 may be disposed to face the second direction X. Furthermore, the remaining first electrodes 130 may be disposed such that their lengthwise directions are oriented in the first direction Y. FIG.

在此狀況下,在複數個第二電極160當中,在第一方向Y上鄰近於第二孔配置區182之兩個第二電極160i及160j可經安置使得其長度方向在第二方向X上定向,且鄰近於第二孔配置區182之第二電極160k及160l亦可在第二方向X上安置使得其長度方向相同。 In this case, among the plurality of second electrodes 160, two second electrodes 160i and 160j adjacent to the second hole arrangement region 182 in the first direction Y may be disposed such that their length directions are in the second direction X The second electrodes 160k and 160l which are oriented and adjacent to the second hole arrangement region 182 can also be arranged in the second direction X such that their length directions are the same.

此處,可形成複數個第二孔配置區182,且數目為兩個之倍數的複數個第二電極160可經安置使得其長度方向在第二方向X上定向。更具體而言,複數個第二電極160當中之至少八個第二電極160i至160p可經安置使得其長度方向在第二方向X上定向。此外,以彼此相對之兩列安置於邊緣區中的第二電極160q亦可經安置使得其長度方向在第二方向X上定向。此外,剩餘第二電極160可經安置使得其長度方向在第一方向Y上定向。 Here, a plurality of second hole arrangement regions 182 may be formed, and a plurality of second electrodes 160 in a number that is a multiple of two may be disposed such that their length directions are oriented in the second direction X. More specifically, at least eight of the second electrodes 160i to 160p among the plurality of second electrodes 160 may be disposed such that their length directions are oriented in the second direction X. As shown in FIG. In addition, the second electrodes 160q disposed in the edge region in two rows opposite to each other can also be disposed such that their length directions are oriented in the second direction X. FIG. Furthermore, the remaining second electrodes 160 may be disposed such that their lengthwise directions are oriented in the first direction Y.

參看圖11,可形成複數個第一孔配置區112,且複數個第一 電極130當中之與一個第一孔配置區112間隔開的四個第一電極130o至130r可經安置使得其長度方向在第二方向X上定向。此處,複數個電極可安置於第一孔配置區112與第一電極130o至130r之間。另一方面,第一電極130o至130r可在第二方向X上安置使得其至少一部分與藉由自界定第一孔配置區112之虛擬線延伸之延伸線形成的虛擬空間重疊。此外,複數個第一電極130當中之在第一方向上鄰近於另一第一孔配置區112的四個第一電極130s至130v可在第二方向X上安置。 Referring to FIG. 11 , a plurality of first hole configuration regions 112 may be formed, and a plurality of first The four first electrodes 130o to 130r among the electrodes 130 spaced apart from one first hole arrangement region 112 may be disposed such that their length directions are oriented in the second direction X. As shown in FIG. Here, a plurality of electrodes may be disposed between the first hole arrangement region 112 and the first electrodes 130o to 130r. On the other hand, the first electrodes 130o to 130r may be disposed in the second direction X such that at least a part thereof overlaps with a virtual space formed by an extension line extending from the virtual line defining the first hole arrangement region 112 . In addition, the four first electrodes 130s to 130v of the plurality of first electrodes 130 adjacent to the other first hole arrangement region 112 in the first direction may be disposed in the second direction X. As shown in FIG.

在此狀況下,第二電極160當中之鄰近於第二孔配置區182的四個第二電極160r至160u及四個第二電極160v至160y可安置成使得其長度方向在第二方向X上定向。 In this case, the four second electrodes 160r to 160u and the four second electrodes 160v to 160y adjacent to the second hole arrangement region 182 among the second electrodes 160 may be arranged such that their length directions are in the second direction X Orientation.

參看圖12,複數個第一通孔111及複數個第二通孔181可形成於第一金屬基板110及第二金屬基板180中。因此,亦可形成複數個第一孔配置區112及複數個第二孔配置區182。舉例而言,第一金屬基板110可包括四個第一通孔111及四個第一孔配置區112,且第二金屬基板180可包括四個第二通孔181及四個第二孔配置區182。 Referring to FIG. 12 , a plurality of first through holes 111 and a plurality of second through holes 181 may be formed in the first metal substrate 110 and the second metal substrate 180 . Therefore, a plurality of first hole arrangement regions 112 and a plurality of second hole arrangement regions 182 can also be formed. For example, the first metal substrate 110 may include four first through holes 111 and four first hole configuration areas 112, and the second metal substrate 180 may include four second through holes 181 and four second hole configurations District 182.

在此狀況下,在複數個第一電極130當中,鄰近於每一第一孔配置區112之兩個第一電極130-1及130-2可經安置使得其長度方向在第二方向X上定向。此外,鄰近於每一第一孔配置區112之另外兩個第一電極130-3及130-4亦可經安置使得其長度方向在第二方向X上定向。因此,數目為兩個之倍數的複數個第一電極130可安置成面向第二方向X。更具體而言,複數個第一電極130當中之至少16個第一電極130-1至130-4可安置成面向第二方向X。此外,剩餘第一電極130可經安置使得其長度方向在第一方向Y上定向。 In this case, among the plurality of first electrodes 130, the two first electrodes 130-1 and 130-2 adjacent to each of the first hole arrangement regions 112 may be disposed such that their length directions are in the second direction X Orientation. In addition, the other two first electrodes 130 - 3 and 130 - 4 adjacent to each first hole arrangement region 112 may also be disposed such that their length directions are oriented in the second direction X. Therefore, a plurality of first electrodes 130 which are a multiple of two may be arranged to face the second direction X. As shown in FIG. More specifically, at least 16 first electrodes 130-1 to 130-4 among the plurality of first electrodes 130 may be disposed to face the second direction X. Furthermore, the remaining first electrodes 130 may be disposed such that their lengthwise directions are oriented in the first direction Y. FIG.

此外,鄰近於安置成鄰近於第一孔配置區112中之任一者以便面向第二方向X的四個第一電極130-1至130-4中之至少一者的2n個第一電極130-2n亦可經安置,使得其長度方向在第二方向X上定向(其中n為一或多個之整數)。此處,安置2n個第一電極130-2n之位置可根據複數個第二電極160之配置結構而不同地改變。 In addition, 2n first electrodes 130 adjacent to at least one of the four first electrodes 130 - 1 to 130 - 4 disposed adjacent to any of the first hole arrangement regions 112 so as to face the second direction X -2n can also be positioned such that its length direction is oriented in the second direction X (where n is an integer of one or more). Here, the positions where the 2n first electrodes 130 - 2n are disposed may be variously changed according to the configuration of the plurality of second electrodes 160 .

此外,複數個電極可安置於第一孔配置區112與2n個第一電極130-2n之間。另一方面,2n個第一電極130-2n可在第二方向X上安置,使得其至少一部分與藉由自界定第一孔配置區112之虛擬線延伸之延伸線形成的虛擬空間重疊。 In addition, a plurality of electrodes may be disposed between the first hole arrangement region 112 and the 2n first electrodes 130-2n. On the other hand, the 2n first electrodes 130 - 2n may be disposed in the second direction X such that at least a portion thereof overlaps with the virtual space formed by the extension line extending from the virtual line defining the first hole arrangement region 112 .

在圖12中,2n個第一電極130-2n說明為在第二方向X上安置,但本發明不限於此,且2n個第二電極可在第一方向Y上安置。 In FIG. 12 , 2n first electrodes 130 - 2n are illustrated as being disposed in the second direction X, but the present invention is not limited thereto, and 2n second electrodes may be disposed in the first direction Y.

在圖12中僅說明安置於第一金屬基板110與複數個第一電極130之間的第一樹脂層120及安置於第二金屬基板180與複數個第二電極160之間的第二樹脂層170,但本發明不限於此。為便於描述,在圖7至圖11之例示性實施例中省略第一樹脂層120及第二樹脂層170,且亦可在圖7至圖11之例示性實施例應用具有相同或類似結構之第一樹脂層120及第二樹脂層170。 In FIG. 12 , only the first resin layer 120 disposed between the first metal substrate 110 and the plurality of first electrodes 130 and the second resin layer disposed between the second metal substrate 180 and the plurality of second electrodes 160 are illustrated 170, but the present invention is not limited to this. For convenience of description, the first resin layer 120 and the second resin layer 170 are omitted in the exemplary embodiment of FIGS. 7 to 11 , and the same or similar structures can also be applied in the exemplary embodiment of FIGS. 7 to 11 . The first resin layer 120 and the second resin layer 170 .

類似地,僅在圖12中說明端子電極500,但本發明不限於此。亦可在圖7至圖11之例示性實施例應用具有相同或類似結構之端子電極500。 Similarly, only the terminal electrode 500 is illustrated in FIG. 12, but the present invention is not limited thereto. Terminal electrodes 500 having the same or similar structures may also be applied in the exemplary embodiments of FIGS. 7 to 11 .

如圖7至圖12中所展示,在邊緣區中在第二方向X上安置以便彼此相對之兩列可包括於安置於第一金屬基板110上之第一電極130中,或可包括於安置於第二金屬基板180上之第二電極160中。 As shown in FIGS. 7 to 12 , the two columns disposed in the second direction X so as to be opposite to each other in the edge region may be included in the first electrode 130 disposed on the first metal substrate 110 , or may be included in the disposed in the second electrode 160 on the second metal substrate 180 .

在此狀況下,形成於第一金屬基板110之與複數個第一電極130接觸之第一表面中的第一通孔111之直徑d1可與形成於第二金屬基板180之與複數個第二電極160接觸之第一表面中的第二通孔181之直徑d2相同。然而,根據下文待描述之絕緣插入部件的配置形式、位置及其類似者,形成於第一金屬基板110之與複數個第一電極130接觸之第一表面中的第一通孔111之直徑d1可不同於形成於第二金屬基板180之與複數個第二電極160接觸之第一表面中的第二通孔181之直徑d2。 In this case, the diameter d1 of the first through hole 111 formed in the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 may be the same as the diameter d1 of the first through hole 111 formed in the second metal substrate 180 and the plurality of second electrodes 130 . The diameters d2 of the second through holes 181 in the first surface where the electrodes 160 contact are the same. However, the diameter d1 of the first through-hole 111 formed in the first surface of the first metal substrate 110 in contact with the plurality of first electrodes 130 depends on the configuration form, position, and the like of the insulating interposer to be described later. The diameter d2 of the second through holes 181 formed in the first surface of the second metal substrate 180 in contact with the plurality of second electrodes 160 may be different.

同時,如圖7至圖12中所展示,第一孔配置區112之面積可為一個第一電極130之面積的四倍或大於四倍,較佳六倍或大於六倍,且更佳八倍或大於八倍。當第一孔配置區112之面積小於一個第一電極130 之面積的四倍時,在1kV或大於1kV之高AC電壓下,電流可經由第一通孔111流動至第一金屬基板110,此可導致第一金屬基板110之電崩潰。因此,在高電壓下之應用領域中,為了防止熱電模組之電崩潰,確保足夠絕緣距離為重要的。當第一孔配置區112之面積為一個第一電極130之面積的八倍或大於八倍時,甚至在2.5kV或大於2.5kV之高AC電壓下,亦不會發生電崩潰。類似地,形成於第二金屬基板180中之第二孔配置區182的面積可為一個第二電極160之面積的四倍或大於四倍,較佳六倍或大於六倍,且更佳八倍或大於八倍。 Meanwhile, as shown in FIGS. 7-12 , the area of the first hole arrangement region 112 may be four times or more, preferably six times or more, and more preferably eight times the area of one first electrode 130 . times or more than eight times. When the area of the first hole arrangement region 112 is smaller than one first electrode 130 When the area is four times larger, at a high AC voltage of 1 kV or more, current can flow to the first metal substrate 110 through the first via 111 , which can cause electrical collapse of the first metal substrate 110 . Therefore, in the application field under high voltage, in order to prevent the electrical breakdown of the thermoelectric module, it is important to ensure a sufficient insulation distance. When the area of the first hole arrangement region 112 is eight times or more the area of one first electrode 130 , no electrical collapse occurs even at a high AC voltage of 2.5 kV or more. Similarly, the area of the second hole arrangement region 182 formed in the second metal substrate 180 may be four times or more, preferably six times or more, and more preferably eight times the area of one second electrode 160 times or more than eight times.

此外,如圖7至圖12中所展示,在複數個第一電極130當中,最接近第一金屬基板110之第一邊緣(未圖示)安置的所有電極可週期性地安置,且可經安置使得連接最接近第一金屬基板110之第一邊緣安置的電極之表面的虛擬線之開始點與結束點之間的路徑為不具有彎曲區的直線。亦即,此可意謂在最接近第一金屬基板110之第一邊緣的所有第一電極130之四個電極的表面當中,最接近第一金屬基板110之第一邊緣的電極之表面安置成不具有移除區且在一個方向上與第一金屬基板110之第一邊緣隔開相同間隔。舉例而言,此可意謂當連接最接近第一金屬基板110之第一邊緣安置的電極之表面的虛擬線之開始點與結束點之間的路徑為直線時,在複數個第一電極130當中,週期性地安置第一行(未圖示)中之所有電極。因此,當複數個第一電極130安置於第一金屬基板110上時,有可能降低製程之複雜度,且有可能簡化安置於第二金屬基板180上之第二電極160及安置於第二電極160與第一電極130之間的熱電支腳之配置結構。此外,由於第一金屬基板110之邊緣與最接近第一金屬基板110之邊緣安置的第一電極130之間的最短距離可維持為恆定的,因此最接近第一金屬基板110之邊緣安置的第一電極130可具有均勻的電特性。 In addition, as shown in FIGS. 7 to 12 , among the plurality of first electrodes 130 , all electrodes disposed closest to the first edge (not shown) of the first metal substrate 110 may be disposed periodically, and may be It is arranged so that the path between the start point and the end point of the imaginary line connecting the surfaces of the electrodes arranged closest to the first edge of the first metal substrate 110 is a straight line without a curved region. That is, this may mean that among the surfaces of the four electrodes of all the first electrodes 130 closest to the first edge of the first metal substrate 110, the surface of the electrode closest to the first edge of the first metal substrate 110 is arranged to be There is no removal area and is spaced apart from the first edge of the first metal substrate 110 by the same interval in one direction. For example, this may mean that when the path between the start point and the end point of the imaginary line connecting the surfaces of the electrodes disposed closest to the first edge of the first metal substrate 110 is a straight line, when the plurality of first electrodes 130 Therein, all electrodes in the first row (not shown) are placed periodically. Therefore, when a plurality of first electrodes 130 are disposed on the first metal substrate 110, it is possible to reduce the complexity of the process, and it is possible to simplify the second electrodes 160 disposed on the second metal substrate 180 and the second electrodes disposed thereon The configuration structure of the thermoelectric legs between 160 and the first electrode 130 . In addition, since the shortest distance between the edge of the first metal substrate 110 and the first electrode 130 disposed closest to the edge of the first metal substrate 110 can be maintained constant, the first electrode 130 disposed closest to the edge of the first metal substrate 110 An electrode 130 may have uniform electrical properties.

當連接最接近第一金屬基板110之第一邊緣安置的電極之表面的虛擬線之開始點與結束點之間的路徑包括彎曲區時,此可意謂複數個第一電極130當中之第一行中的一些電極被移除或包括凹入區,且因此失去了配置之週期性。在彎曲區中最接近第一金屬基板110之第一邊緣安 置的電極之表面可為安置於第一行之後的第二行(未圖示)中之電極的表面。此處,第二行可為相比第一行更遠離第一金屬基板110之第一邊緣安置的行,且可能並非最外行。第一電極130可安置成包括彎曲區,以便另外配置通孔。然而,在此狀況下,如上文所描述,在高壓下之應用領域中,可能無法確保足夠絕緣距離從而導致熱電模組之電崩潰,或第一電極部分之有效區可減小,從而導致熱電模組之效率降低。 When the path between the start point and the end point of the imaginary line connecting the surfaces of the electrodes disposed closest to the first edge of the first metal substrate 110 includes a curved area, this may mean the first one of the plurality of first electrodes 130 Some electrodes in the row are removed or include recessed regions, and thus the periodicity of the configuration is lost. The first edge closest to the first metal substrate 110 in the bending region is The surface of the electrodes placed may be the surfaces of electrodes placed in a second row (not shown) after the first row. Here, the second row may be a row disposed farther from the first edge of the first metal substrate 110 than the first row, and may not be the outermost row. The first electrode 130 may be positioned to include a curved region to additionally configure the through hole. However, in this case, as described above, in the application field under high voltage, a sufficient insulating distance may not be ensured to cause the electrical collapse of the thermoelectric module, or the effective area of the first electrode portion may be reduced, thereby causing the thermoelectric The efficiency of the module is reduced.

類似地,複數個第一電極130當中最接近面向第一金屬基板110之第一邊緣之第二邊緣(未圖示)的所有電極(在第N行中)、複數個第一電極130當中最接近第一金屬基板110之第一邊緣與第二邊緣之間的第三邊緣(未圖示)之電極(在第一列中)及複數個第一電極130當中最接近面向第一金屬基板110之第三邊緣之第四邊緣(未圖示)的電極(在第M列中)可經安置,使得連接最接近每一邊緣安置之電極之表面的虛擬線之開始點與結束點之間的路徑為不具有彎曲區之直線。然而,根據諸如端子電極配置之設計,最外行或最外列中之僅任一者,例如第一行、第N行、第一列及第M列中之僅任一者可具有例外路徑。舉例而言,端子電極可連接至安置於作為最外行或最外列之第一行、第N行、第一列及第M列中之任一者中的第一電極130,或可自安置於第一行、第N行、第一列及第M列中之任一者中的第一電極130延伸。因此,在最外行及最外列當中,除安置有端子電極之一行或一列之外,剩餘行或列可安置成與第一金屬基板110之對應邊緣隔開一定間隔。 Similarly, among the plurality of first electrodes 130 , all electrodes (in the Nth row) closest to the second edge (not shown) facing the first edge of the first metal substrate 110 , the first electrode 130 the most The electrode (in the first row) and the plurality of first electrodes 130 facing the first metal substrate 110 closest to the third edge (not shown) between the first edge and the second edge of the first metal substrate 110 The electrodes (in column M) of the third edge and the fourth edge (not shown) may be positioned such that the distance between the start and end points of the imaginary line connecting the surface closest to the electrode positioned at each edge The path is a straight line with no curved regions. However, depending on the design such as the terminal electrode configuration, only any of the outermost rows or columns, eg, only any of the first row, Nth row, first column, and Mth column, may have an exception path. For example, the terminal electrodes may be connected to the first electrodes 130 disposed in any one of the first row, the Nth row, the first column, and the Mth column as the outermost row or column, or may be self-positioned The first electrodes 130 in any one of the first row, the Nth row, the first column, and the Mth column extend. Therefore, among the outermost rows and columns, except for the row or column in which the terminal electrodes are arranged, the remaining rows or columns may be arranged to be spaced apart from the corresponding edges of the first metal substrate 110 .

圖13說明根據本發明之例示性實施例的熱電元件之耦接結構。 13 illustrates a coupling structure of a thermoelectric element according to an exemplary embodiment of the present invention.

參看圖13,熱電元件100可使用複數個耦接部件400來耦接。複數個耦接部件400可連接散熱片220及第二金屬基板180,連接散熱片220、第二金屬基板180及第一金屬基板(未圖示),連接散熱片220、第二金屬基板180、第一金屬基板(未圖示)及冷卻單元(未圖示),連接第二金屬基板180、第一金屬基板(未圖示)及冷卻單元(未圖示),或連接第二金屬基板180及第一金屬基板(未圖示)。 Referring to FIG. 13 , the thermoelectric element 100 may be coupled using a plurality of coupling members 400 . The plurality of coupling components 400 can connect the heat sink 220 and the second metal substrate 180, connect the heat sink 220, the second metal substrate 180 and the first metal substrate (not shown), and connect the heat sink 220, the second metal substrate 180, The first metal substrate (not shown) and the cooling unit (not shown) are connected to the second metal substrate 180 , the first metal substrate (not shown) and the cooling unit (not shown), or connected to the second metal substrate 180 and a first metal substrate (not shown).

為此,耦接部件400所穿過之通孔S可形成於散熱片220、第二金屬基板180、第一金屬基板(未圖示)及冷卻單元(未圖示)中。此處,通孔S可包括第二通孔181及第一通孔111。此處,分開的絕緣插入部件410可進一步安置於第二通孔181與耦接部件400之間。分開的絕緣插入部件410可為環繞耦接部件400之外圓周表面的絕緣插入部件或環繞通孔S之壁表面的絕緣插入部件。因此,有可能增加熱電元件之絕緣距離。 To this end, through holes S through which the coupling member 400 passes may be formed in the heat sink 220 , the second metal substrate 180 , the first metal substrate (not shown) and the cooling unit (not shown). Here, the through hole S may include the second through hole 181 and the first through hole 111 . Here, the separated insulating insertion part 410 may be further disposed between the second through hole 181 and the coupling part 400 . The separate insulating insertion member 410 may be an insulating insertion member surrounding the outer circumferential surface of the coupling member 400 or an insulating insertion member surrounding the wall surface of the through-hole S. Therefore, it is possible to increase the insulation distance of the thermoelectric element.

同時,絕緣插入部件410之形狀可與圖13A及圖13B中所說明之彼等形狀相同。舉例而言,如圖13A中所展示,台階部分可形成於在第二金屬基板180中形成之通孔S的區中,使得絕緣插入部件410可安置成環繞通孔S之壁表面的一部分。替代地,台階部分可形成於在第二金屬基板180中形成之通孔S的區中,使得絕緣插入部件410可安置成沿著通孔S之壁表面延伸至第二金屬基板18之第一表面,其上安置第二電極(未圖示)。 Meanwhile, the shape of the insulating insert 410 may be the same as those illustrated in FIGS. 13A and 13B . For example, as shown in FIG. 13A , a stepped portion may be formed in the region of the through hole S formed in the second metal substrate 180 so that the insulating insert 410 may be disposed to surround a portion of the wall surface of the through hole S. Alternatively, the stepped portion may be formed in the region of the through hole S formed in the second metal substrate 180 , so that the insulating insert 410 may be disposed to extend along the wall surface of the through hole S to the first portion of the second metal substrate 18 . surface on which a second electrode (not shown) is placed.

參看圖13A,形成於第二金屬基板180之與第二電極接觸之第一表面中的通孔S之直徑d2'可與形成於第一金屬基板之與第一電極接觸之第一表面中的通孔之直徑相同。在此狀況下,根據絕緣插入部件410之形狀,形成於第二金屬基板180之第一表面中的通孔S之直徑d2'可不同於形成於第二表面中之通孔S之直徑d2,該第二表面為與第一表面相對之表面。儘管未展示,但當台階部分未形成於通孔S之區中且絕緣插入部件410僅安置於第二金屬基板180之上表面的一部分上或安置成自第二金屬基板180之上表面延伸至通孔S之壁表面的一部分或全部時,形成於第二金屬基板180之第一表面中的通孔S之直徑d2'可與形成於第二表面中之通孔S之直徑d2相同,該第二表面為與第一表面相對之表面。 13A, the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 in contact with the second electrode may be the same as the diameter d2' formed in the first surface of the first metal substrate 180 in contact with the first electrode. The diameters of the through holes are the same. In this case, depending on the shape of the insulating insert 410, the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 may be different from the diameter d2 of the through hole S formed in the second surface, The second surface is the surface opposite to the first surface. Although not shown, when the stepped portion is not formed in the area of the through hole S and the insulating interposer 410 is disposed only on a part of the upper surface of the second metal substrate 180 or is disposed to extend from the upper surface of the second metal substrate 180 to When part or all of the wall surface of the through hole S, the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 may be the same as the diameter d2 of the through hole S formed in the second surface, the The second surface is the surface opposite to the first surface.

參看圖13B,由於絕緣插入部件410之形狀,形成於第二金屬基板180之與第二電極接觸之第一表面中的通孔S之直徑d2'可大於形成於第一金屬基板之與第一電極接觸之第一表面中的通孔之直徑。在此狀況下,形成於第二金屬基板180之第一表面中的通孔S之直徑d2'可為形成於第一金屬基板之第一表面中的通孔之直徑的1.1至2.0倍。當形成於第二金 屬基板180之第一表面中的通孔S之直徑d2'小於形成於第一金屬基板中之第一表面的通孔之直徑的1.1倍時,絕緣插入部件410之絕緣效應可能不顯著,此可導致熱電元件之絕緣崩潰。當形成於第二金屬基板180之第一表面中的通孔S之直徑d2'超過形成於第一金屬基板之第一表面中的通孔之直徑的2.0倍時,由通孔S佔據之區的大小可相對增加,此可減小第二金屬基板180之有效面積且可降低熱電元件之效率。 13B, due to the shape of the insulating insert member 410, the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 in contact with the second electrode may be larger than the diameter d2' formed between the first metal substrate and the first The diameter of the through hole in the first surface that the electrode contacts. In this case, the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 may be 1.1 to 2.0 times the diameter of the through hole S formed in the first surface of the first metal substrate. when formed in the second gold When the diameter d2' of the through hole S in the first surface of the substrate 180 is less than 1.1 times the diameter of the through hole formed in the first surface of the first metal substrate, the insulating effect of the insulating insert 410 may not be significant. Can cause insulation breakdown of thermoelectric elements. When the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 exceeds 2.0 times the diameter of the through hole S formed in the first surface of the first metal substrate 180, the area occupied by the through hole S The size of can be relatively increased, which can reduce the effective area of the second metal substrate 180 and can reduce the efficiency of the thermoelectric element.

由於絕緣插入部件410之形狀,形成於第二金屬基板180之第一表面中的通孔S之直徑d2'可不同於形成於第二表面中之通孔S之直徑,該第二表面為與第一表面相對之表面。如上文所描述,當台階部分未形成於第二金屬基板180之通孔S的區中時,形成於第二金屬基板180之第一表面中的通孔S之直徑d2'可與形成於第二表面中之通孔S之直徑d2相同,該第二表面為與第一表面相對之表面。 Due to the shape of the insulating insert 410 , the diameter d2 ′ of the through hole S formed in the first surface of the second metal substrate 180 may be different from the diameter d2 ′ of the through hole S formed in the second surface, which is the same as the diameter of the through hole S formed in the second surface. The surface opposite to the first surface. As described above, when the stepped portion is not formed in the region of the through hole S of the second metal substrate 180, the diameter d2' of the through hole S formed in the first surface of the second metal substrate 180 may be the same as the diameter d2' of the through hole S formed in the second metal substrate 180. The diameter d2 of the through hole S in the two surfaces is the same, and the second surface is the surface opposite to the first surface.

根據本發明之例示性實施例,在第一電極130或第二電極160當中,即使當電極與第一孔配置區112或第二孔配置區182間隔開時,至少兩個電極亦可在第二方向X上安置使得其至少一部分與藉由自界定每一孔配置區之虛擬線延伸之延伸線形成的虛擬空間重疊,且複數個P型熱電支腳及複數個N型熱電支腳可經最佳地安置而不會在形成每一孔配置區之有限空間中浪費空間。 According to an exemplary embodiment of the present invention, among the first electrode 130 or the second electrode 160, even when the electrode is spaced apart from the first hole arrangement region 112 or the second hole arrangement region 182, at least two electrodes may be in the first electrode 130 or the second hole arrangement region 182. The two directions X are arranged so that at least a part thereof overlaps with the virtual space formed by the extension line extending from the virtual line defining each hole arrangement area, and a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs can pass through Optimum placement without wasting space in the limited space forming each hole placement area.

根據本發明之例示性實施例的熱電元件可應用於發電設備、冷卻設備、加熱設備及其類似者。具體而言,根據本發明之例示性實施例的熱電元件可主要應用於光學通信模組、感測器、醫療儀器、量測儀器、航空工業領域、冰箱、冷凍器、汽車通風片、杯架、洗衣機、乾衣機、酒窖、淨水器、感測器電源供應器、熱電堆及其類似者。 The thermoelectric element according to the exemplary embodiment of the present invention may be applied to power generation equipment, cooling equipment, heating equipment, and the like. Specifically, the thermoelectric element according to the exemplary embodiment of the present invention can be mainly used in optical communication modules, sensors, medical instruments, measuring instruments, aviation industry, refrigerators, freezers, automobile ventilation sheets, and cup holders. , washing machines, dryers, wine cellars, water purifiers, sensor power supplies, thermopiles and the like.

此處,作為根據本發明之例示性實施例的熱電元件應用於醫療儀器的實例,存在聚合酶鏈反應(PCR)儀器。PCR儀器為如下設備:其中擴增去氧核糖核酸(DNA)以判定DNA序列,此需要精確的溫度控制及熱循環。為此,可將基於帕爾貼之熱電元件應用於該儀器。 Here, as an example in which the pyroelectric element according to the exemplary embodiment of the present invention is applied to a medical instrument, there is a polymerase chain reaction (PCR) instrument. PCR instruments are devices in which deoxyribonucleic acid (DNA) is amplified to determine the DNA sequence, which requires precise temperature control and thermal cycling. To this end, a Peltier-based thermoelectric element can be applied to the instrument.

作為根據本發明之例示性實施例的熱電元件應用於醫療儀 器之另一實例,存在光電偵測器。此處,光電偵測器包括紅外線/紫外線偵測器、電荷耦合裝置(CCD)感測器、X射線偵測器及熱電熱參考源(TTRS)。可應用基於帕爾貼之熱電元件以冷卻光電偵測器。因此,可防止由於光電偵測器中之溫度升高的波長改變以及輸出功率及解析度之降低。 Application of the thermoelectric element as an exemplary embodiment of the present invention to a medical instrument Another example of a sensor is a photodetector. Here, the photodetectors include infrared/ultraviolet detectors, charge coupled device (CCD) sensors, X-ray detectors, and thermoelectric thermal reference sources (TTRS). Peltier-based thermoelectric elements can be applied to cool photodetectors. Therefore, wavelength change due to temperature increase in the photodetector and reduction in output power and resolution can be prevented.

作為根據本發明之例示性實施例的熱電元件應用於醫療儀器之又一實例,存在免疫檢定領域、試管內診斷領域、溫度控制及冷卻系統、物理治療領域、液體冷凍器系統、血液/電漿溫度控制領域及其類似者。因此,可精確地控制溫度。 As yet another example of the application of the thermoelectric element according to the exemplary embodiment of the present invention to medical instruments, there are the field of immunoassay, the field of in vitro diagnosis, the field of temperature control and cooling, the field of physical therapy, the liquid freezer system, the blood/plasma Temperature control field and the like. Therefore, the temperature can be precisely controlled.

作為根據本發明之例示性實施例的熱電元件應用於醫療儀器的又一實例,存在人造心臟。因此,可向人造心臟供電。 As yet another example of the application of a thermoelectric element according to an exemplary embodiment of the present invention to a medical instrument, there is an artificial heart. Therefore, the artificial heart can be powered.

作為根據本發明之例示性實施例的熱電元件應用於航空工業領域之實例,存在衛星追蹤系統、熱成像攝影機、紅外線/紫外線偵測器、CCD感測器、哈柏(Hubble)太空望遠鏡、TTRS及其類似者。因此,可維持影像感測器之溫度。 As examples of the application of the thermoelectric element according to the exemplary embodiment of the present invention to the aerospace industry, there are satellite tracking systems, thermal imaging cameras, infrared/ultraviolet detectors, CCD sensors, Hubble space telescopes, TTRS and the like. Therefore, the temperature of the image sensor can be maintained.

作為根據本發明之例示性實施例的熱電元件應用於航空工業領域之另一實例,存在冷卻設備、加熱器、發電設備及其類似者。 As another example in which the thermoelectric element according to the exemplary embodiment of the present invention is applied to the field of the aviation industry, there are cooling equipment, heaters, power generating equipment, and the like.

此外,根據本發明之例示性實施例的熱電元件可應用於其他工業領域以用於發電、冷卻及加熱。 In addition, the thermoelectric elements according to the exemplary embodiments of the present invention may be applied to other industrial fields for power generation, cooling and heating.

根據本發明之例示性實施例,由於高溫部分之基板及低溫部分之基板耦接使得其有效區之部分彼此佔據,因此有可能減少高溫部分之基板的熱變形且防止應力集中於接合部分處,藉此增加熱電模組之可靠性及耐久性。 According to an exemplary embodiment of the present invention, since the substrate of the high temperature portion and the substrate of the low temperature portion are coupled so that portions of their effective areas occupy each other, it is possible to reduce thermal deformation of the substrate of the high temperature portion and prevent stress from concentrating on the joint portion, Thereby, the reliability and durability of the thermoelectric module are increased.

根據本發明之例示性實施例,複數個P型熱電支腳及複數個N型熱電支腳可經最佳地安置,而不會在形成有每一孔配置區之有限空間中浪費空間,藉此維持熱電模組之發電效能。 According to an exemplary embodiment of the present invention, the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs can be optimally positioned without wasting space in the limited space where each hole placement area is formed, by This maintains the power generation performance of the thermoelectric module.

雖然已參考本發明之例示性實施例展示及描述了本發明,但熟習此項技術者應理解,在不脫離如由隨附申請專利範圍界定的本發明之精神及範疇的情況下,可在本發明中進行形式及細節上的各種改變。 While the present invention has been shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that, without departing from the spirit and scope of the invention as defined by the scope of the appended claims, Various changes in form and detail were made in the present invention.

110:第一金屬基板 110: The first metal substrate

120:第一樹脂層 120: The first resin layer

130:第一電極 130: First electrode

140:P型熱電支腳 140: P-type thermoelectric feet

160:第二電極 160: Second electrode

170:第二樹脂層 170: Second resin layer

180:第二金屬基板 180: Second metal substrate

190:耦接部件 190: Coupling parts

220:散熱片 220: heat sink

221:扁平基板 221: Flat substrate

A1:有效區 A1: Effective area

A2:周邊區 A2: Surrounding area

B1:有效區 B1: Effective area

B2:周邊區 B2: Surrounding area

Claims (20)

一種熱電模組,其包含:一第一金屬基板,其包括一第一通孔;一第一絕緣層,其安置於該第一金屬基板上;一第一電極部分,其安置於該第一絕緣層上且包括複數個第一電極;複數個熱電支腳,其安置於該第一電極部分上;一第二電極部分,其安置於該複數個熱電支腳上且包括複數個第二電極;一第二絕緣層,其安置於該第二電極部分上;及一第二金屬基板,其安置於該第二絕緣層上且包括一第二通孔,其中該第一金屬基板包括安置有該第一電極部分之一有效區及形成於該有效區之外的一周邊區,該第二金屬基板包括安置有該第二電極部分之一有效區及形成於該有效區之外的一周邊區,該第一通孔安置於該第一金屬基板之該有效區中,該第一通孔及該第二通孔形成於彼此對應之位置處,該第一金屬基板包括一第一孔配置區,其為藉由連接最接近該第一通孔且鄰近於彼此而安置之該等第一電極之多個表面中最接近該第一通孔之表面的虛擬線形成的一空間,該第一孔配置區之一面積為該複數個第一電極中之一個第一電極之一面積的四倍或大於四倍,且一耐電壓為1kV或大於1kV。 A thermoelectric module, comprising: a first metal substrate including a first through hole; a first insulating layer disposed on the first metal substrate; a first electrode portion disposed on the first on the insulating layer and including a plurality of first electrodes; a plurality of thermoelectric legs, which are arranged on the first electrode part; a second electrode part, which is arranged on the plurality of thermoelectric legs and including a plurality of second electrodes ; a second insulating layer disposed on the second electrode portion; and a second metal substrate disposed on the second insulating layer and including a second through hole, wherein the first metal substrate includes a An active area of the first electrode portion and a peripheral area formed outside the active area, the second metal substrate includes an active area disposed with the second electrode portion and a peripheral area formed outside the active area, The first through hole is disposed in the effective area of the first metal substrate, the first through hole and the second through hole are formed at positions corresponding to each other, and the first metal substrate includes a first hole arrangement area, It is a space formed by connecting an imaginary line closest to the surface of the first through hole among the surfaces of the first electrodes disposed closest to the first through hole and adjacent to each other, the first hole An area of the configuration area is four times or more than an area of one of the first electrodes among the plurality of first electrodes, and a withstand voltage is 1 kV or more. 如申請專利範圍第1項所述之熱電模組,其中該第一通孔之一直徑不同於對應該第一通孔之該直徑之該第二通孔之一直徑。 The thermoelectric module of claim 1, wherein a diameter of the first through hole is different from a diameter of the second through hole corresponding to the diameter of the first through hole. 如申請專利範圍第2項所述之熱電模組,其進一步包含安置於該第二通孔之一周邊區中的一絕緣插入部件。 The thermoelectric module of claim 2, further comprising an insulating insert member disposed in a peripheral region of the second through hole. 如申請專利範圍第3項所述之熱電模組,其中該第一通孔之該直徑小於第二通孔之該直徑。 The thermoelectric module as described in claim 3, wherein the diameter of the first through hole is smaller than the diameter of the second through hole. 如申請專利範圍第4項所述之熱電模組,其進二步包含安置於該第一通孔,該第二通孔及該絕緣插入部件當中之一耦接部件。 The thermoelectric module of claim 4, further comprising a coupling member disposed among the first through hole, the second through hole and the insulating insert member. 如申請專利範圍第5項所述之熱電模組,其中該第一絕緣層包括一樹脂及一無機填料。 The thermoelectric module of claim 5, wherein the first insulating layer comprises a resin and an inorganic filler. 如申請專利範圍第6項所述之熱電模組,其中該樹脂包括一環氧樹脂或一聚矽氧樹脂中至少一者,且該無機填料包括鋁,矽及硼當中至少一者之一複合物。。 The thermoelectric module of claim 6, wherein the resin comprises at least one of an epoxy resin or a polysiloxane resin, and the inorganic filler comprises at least one of aluminum, silicon and boron compounded thing. . 如申請專利範圍第7項所述之熱電模組,其中該第一金屬基板包括另一個第一孔配置區。 The thermoelectric module of claim 7, wherein the first metal substrate includes another first hole arrangement area. 如申請專利範圍第1項所述之熱電模組,其中該第一孔配置區之面積為該複數個第一電極當中之一個第一電極之面積的八倍或大於八倍,且該耐電壓為2.5kV或大於2.5kV。 The thermoelectric module according to claim 1, wherein the area of the first hole arrangement area is eight times or more than the area of one first electrode among the plurality of first electrodes, and the withstand voltage 2.5kV or more. 如申請專利範圍第5項所述之熱電模組,其中該第二通孔之該直徑為該第一通孔之該直徑的1.1至2.0倍。 The thermoelectric module of claim 5, wherein the diameter of the second through hole is 1.1 to 2.0 times the diameter of the first through hole. 如申請專利範圍第1項所述之熱電模組,其中該第二通孔之該直徑為該第一通孔之該直徑的1.1至2.0倍。 The thermoelectric module as described in claim 1, wherein the diameter of the second through hole is 1.1 to 2.0 times the diameter of the first through hole. 如申請專利範圍第11項所述之熱電模組,其進一步包含形成於該第一金屬基板之一周邊區中的一第三通孔。 The thermoelectric module of claim 11, further comprising a third through hole formed in a peripheral region of the first metal substrate. 如申請專利範圍第12項所述之熱電模組,其中該第二金屬基板之面積小於該第一金屬基板之面積。 The thermoelectric module as described in claim 12, wherein the area of the second metal substrate is smaller than that of the first metal substrate. 如申請專利範圍第12項所述之熱電模組,其中該第二金屬基板之面積與該第一金屬基板之面積的一比率之範圍為0.5至0.95。 The thermoelectric module of claim 12, wherein a ratio of the area of the second metal substrate to the area of the first metal substrate ranges from 0.5 to 0.95. 如申請專利範圍第13項所述之熱電模組,其進一步包含與該第二金屬基板分隔開之另一第二金屬基板。 The thermoelectric module of claim 13, further comprising another second metal substrate separated from the second metal substrate. 如申請專利範圍第8項所述之熱電模組,其中該第二金屬基板包括一第二孔配置區,其為藉由連接最接近該第二通孔且鄰近於彼此而安置之該等第二電極之表面的虛擬線形成的一空間,且該第一孔配置區及該第二孔配置區形成於彼此對應之位置處。 The thermoelectric module of claim 8, wherein the second metal substrate includes a second hole arrangement region for the first through holes disposed closest to each other and adjacent to each other by connecting them A space is formed by the virtual lines on the surfaces of the two electrodes, and the first hole arrangement area and the second hole arrangement area are formed at positions corresponding to each other. 如申請專利範圍第1項所述之熱電模組,其進一步包含安置於該第一金屬基板與該第一絕緣層之間且包括一樹脂及一無機填料之一第三絕緣層。 The thermoelectric module of claim 1, further comprising a third insulating layer disposed between the first metal substrate and the first insulating layer and comprising a resin and an inorganic filler. 如申請專利範圍第17項所述之熱電模組,其中該第一絕緣層及該第三絕緣層包括相同材料。 The thermoelectric module of claim 17, wherein the first insulating layer and the third insulating layer comprise the same material. 一種發電設備,其包含:根據申請專利範圍第1項所述之熱電模組;及一冷卻單元,其連接至該熱電模組之該第一金屬基板且包括一通孔,其中該冷卻單元之該通孔形成於對應該第一通孔之一位置處,且一耦接部件安置於該冷卻單元之該通孔上。 A power generation device, comprising: the thermoelectric module according to claim 1; and a cooling unit connected to the first metal substrate of the thermoelectric module and including a through hole, wherein the cooling unit A through hole is formed at a position corresponding to the first through hole, and a coupling member is disposed on the through hole of the cooling unit. 如申請專利範圍第1項所述之熱電模組,其中耐電壓為在2.5kV之交流電(AC)電壓及1mA之電流下將特性維持10秒而無絕緣崩潰。 The thermoelectric module of claim 1, wherein the withstand voltage is to maintain characteristics for 10 seconds without insulation breakdown under an alternating current (AC) voltage of 2.5kV and a current of 1mA.
TW109104243A 2019-02-12 2020-02-11 Thermoelectric module TWI757688B (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2019-0016245 2019-02-12
KR20190016245 2019-02-12
KR1020200007448A KR20200098391A (en) 2019-02-12 2020-01-20 Thermoelectric module
KR10-2020-0007448 2020-01-20
KR1020200015059A KR102172292B1 (en) 2019-02-12 2020-02-07 Thermoelectric module
KR10-2020-0015059 2020-02-07

Publications (2)

Publication Number Publication Date
TW202044627A TW202044627A (en) 2020-12-01
TWI757688B true TWI757688B (en) 2022-03-11

Family

ID=72293177

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109104243A TWI757688B (en) 2019-02-12 2020-02-11 Thermoelectric module

Country Status (3)

Country Link
JP (1) JP2020155770A (en)
KR (3) KR20200098391A (en)
TW (1) TWI757688B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240040929A1 (en) * 2020-09-24 2024-02-01 Lg Innotek Co., Ltd. Thermoelectric device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220184A (en) * 1998-02-02 1999-08-10 Natl Aerospace Lab Thermoelectric conversion device
JP2006319262A (en) * 2005-05-16 2006-11-24 Okano Electric Wire Co Ltd Thermoelectric conversion module
TW201112462A (en) * 2009-01-29 2011-04-01 Yamaha Corp Heat exchange unit
US20150013740A1 (en) * 2012-02-27 2015-01-15 Kelk, Ltd. Thermoelectric module, thermoelectric power generating apparatus, and thermoelectric generator
US20180261751A1 (en) * 2017-03-03 2018-09-13 Mahle International Gmbh Method for producing a thermoelectric module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1155974A (en) * 1997-07-28 1999-02-26 Gastar Corp Thermal power generation unit
JP2002353524A (en) * 2001-05-28 2002-12-06 Matsushita Electric Works Ltd Peltier unit and manufacturing method therefor
JP5446114B2 (en) * 2007-04-25 2014-03-19 日立化成株式会社 Thermal conductive film
JP4904193B2 (en) * 2007-04-26 2012-03-28 株式会社Kelk Thermoelectric module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220184A (en) * 1998-02-02 1999-08-10 Natl Aerospace Lab Thermoelectric conversion device
JP2006319262A (en) * 2005-05-16 2006-11-24 Okano Electric Wire Co Ltd Thermoelectric conversion module
TW201112462A (en) * 2009-01-29 2011-04-01 Yamaha Corp Heat exchange unit
US20150013740A1 (en) * 2012-02-27 2015-01-15 Kelk, Ltd. Thermoelectric module, thermoelectric power generating apparatus, and thermoelectric generator
US20180261751A1 (en) * 2017-03-03 2018-09-13 Mahle International Gmbh Method for producing a thermoelectric module

Also Published As

Publication number Publication date
TW202044627A (en) 2020-12-01
KR20210102132A (en) 2021-08-19
KR20200119767A (en) 2020-10-20
KR102439972B1 (en) 2022-09-06
KR20200098391A (en) 2020-08-20
KR102291733B1 (en) 2021-08-23
KR102439972B9 (en) 2023-03-23
JP2020155770A (en) 2020-09-24

Similar Documents

Publication Publication Date Title
JP7387612B2 (en) thermoelectric device
KR20220019005A (en) Thermo electric element
US20220069190A1 (en) Thermoelectric device
TWI757688B (en) Thermoelectric module
EP3696868B1 (en) Thermoelectric module
US11723275B2 (en) Thermoelectric module
KR102618305B1 (en) Thermo electric element
KR20230065207A (en) Thermo electric element
US11980098B2 (en) Thermoelectric module
US11844278B2 (en) Thermoelectric element
KR102434260B1 (en) Thermoelectric element
KR20210017784A (en) Thermo electric apparatus
KR102390171B1 (en) Thermo electric element
KR102220946B1 (en) Thermo electric element
US11974503B2 (en) Thermoelectric module
KR102609889B1 (en) Thermoelectric element
KR20210119798A (en) Power generating apparatus
KR20210092608A (en) Power generating apparatus
KR20190141424A (en) Thermoelectric element