TWI753401B - Thermal processing apparatus, thermal processing system and thermal processing method - Google Patents

Abstract

In the present invention, a substrate is placed on a heat treatment plate, and the placed substrate is subjected to heat treatment. The heater operates according to a predetermined initial operating condition for a fixed period from the time when the substrate is placed on the heat treatment plate, and detects the temperature change of the heat treatment plate. When a plurality of candidate waveforms and a plurality of initial operating conditions respectively corresponding to the plurality of candidate waveforms are stored in the memory unit, one candidate waveform is determined as a reference waveform from among the plurality of candidate waveforms. The heater operates according to the initial operating condition corresponding to one of the candidate waveforms determined as the reference waveform for a fixed period from the time when the substrate is placed on the heat treatment plate, and detects the temperature change of the heat treatment plate. The initial operating conditions memorized in the memory section are changed so that the detected temperature change is close to the reference waveform.

Description

Heat treatment device, heat treatment system and heat treatment method

The present invention relates to a heat treatment device, a heat treatment system and a heat treatment method for heat treatment of a substrate.

Conventionally, heat treatment equipment has been used for FPD (Flat Panel Display) substrates, semiconductor substrates, optical disk substrates, and magnetic disks used in liquid crystal display devices and organic EL (Electro Luminescence) display devices. Various substrates such as substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates are heat treated.

In the heat treatment apparatus, for example, the substrate is heat treated by supporting the substrate on a plate member maintained at a preset temperature (hereinafter referred to as a preset temperature). The set temperature is changed according to the processing contents of the substrate.

For example, in the temperature changing system described in Japanese Patent No. 5658083, by adjusting the driving state of the heater layer included in the baking plate portion (plate member), the temperature of the baking plate portion can be raised or lowered.

However, if an untreated substrate is placed on the plate member maintained at the set temperature, the temperature of the plate member will change due to the temperature of the substrate. Therefore, it is desirable to quickly restore the temperature of the plate member to the set temperature when the substrate is placed on the plate member.

The temperature change of the plate member when the untreated substrate is placed can be predicted to some extent. Therefore, generally, in the heat treatment apparatus, the operating conditions for returning the temperature of the plate member to the set temperature after placing the substrate on the plate member are determined in advance. However, depending on the temperature of the space where the heat treatment device is installed or individual differences in the heat treatment device, even if the heat treatment device is operated according to the predetermined operating conditions, it may be difficult to quickly restore the temperature of the plate member to the set temperature. In this case, the heat treatment of the substrate cannot be performed with high precision.

An object of the present invention is to provide a heat treatment apparatus, a heat treatment system, and a heat treatment method capable of rapidly and precisely performing heat treatment of a substrate.

(1) A heat treatment apparatus according to an aspect of the present invention that heat-treats a substrate, comprising: a plate member on which the substrate is placed; and a heat treatment section for heat-treating the substrate placed on the plate member through the plate member; A memory part, which memorizes the operation conditions of the heat treatment part within a fixed period from the time when the substrate is placed on the plate member; an operation control part, which makes the heat treatment part operate according to the operation conditions memorized in the memory part; and a temperature detector, which detects the temperature of the plate member and a condition changing section that changes the operating conditions stored in the memory section in such a way that the temperature change detected by the temperature detector when the thermal processing section operates in accordance with the operating conditions approaches a predetermined reference waveform.

In this heat treatment apparatus, the substrate is placed on the plate member, and the placed substrate is subjected to heat treatment. In the initial stage of the heat treatment, within a fixed period from the time when the substrate is placed on the plate member, the heat treatment section operates according to the operating conditions memorized in the memory section. Also, the temperature change of the plate member is detected. The operating conditions stored in the memory section are changed so that the detected temperature change is close to the reference waveform.

In this way, when a plurality of substrates are sequentially subjected to heat treatment, at the initial stage of each heat treatment, the heat treatment section operates according to the operating conditions changed during the previous heat treatment. Thereby, the temperature change of the plate member immediately after the substrate is placed on the plate member is closer to the reference waveform than the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually corrected to an appropriate temperature change. Therefore, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for heat-treating the substrate.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate is appropriately performed without being affected by temperature changes around the heat treatment apparatus. As a result of these, the heat treatment of the substrate can be performed quickly and with high precision.

(2) The operating condition may include the value of one or a plurality of control parameters, and the condition changing unit may change one or at least one of the plurality of control parameters stored in the memory so that the detected temperature change is close to the reference waveform. value.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted by a simple process of changing the value of at least one of the one or more control parameters.

(3) The heat treatment part can also be configured to be able to perform PID control, and one or more control parameters include at least one of the proportional parameter, integral parameter and differential parameter of PID control (Proportional-Integral-Derivative Control, proportional-integral-derivative control). The above-mentioned PID control is used to restore the temperature of the plate member to the processing temperature for processing the substrate from the time point when the substrate is placed on the plate member.

In this case, by changing at least one of the values of the proportional parameter, the integral parameter, and the differential parameter, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted.

(4) One or more control parameters may also include the upper limit of the output of the heat treatment section.

In this case, by changing the upper limit of the output of the heat treatment section, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted.

(5) The condition changing unit may change the operating conditions so that the temperature detected by the temperature detector returns to the processing temperature for processing the substrate from the time when the substrate is placed on the plate member. The arrival time up to that point is close to the preset set time.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted based on the arrival time and the set time.

(6) The condition changing unit may change the operating conditions so that the value of the temperature detected by the temperature detector at a specific time point within a fixed period from the time when the substrate is placed on the plate member is brought close to the reference waveform The value of the temperature in the part corresponding to a specific point in time.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted based on the value of the temperature of the plate member.

(7) The condition changing unit may change the operating conditions such that the waveform of the detected temperature generates a smaller excess or deficiency with respect to the set temperature for heat treatment of the substrate.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted based on the excess or deficiency with respect to the set temperature.

(8) According to another aspect of the present invention, a heat treatment apparatus for heat-treating a substrate includes: a plate member on which the substrate is placed; and a heat treatment section for heat-treating the substrate placed on the plate member through the plate member ; a first memory portion that memorizes a plurality of candidate waveforms representing virtual temperature changes of the plate member during a fixed period from the time when the substrate is placed on the plate member, and memorizes a plurality of heat treatment portions corresponding to the plurality of candidate waveforms respectively operating conditions; a temperature detector which detects the temperature of the plate member; a determining part which determines one candidate waveform as a reference waveform from among a plurality of candidate waveforms memorized in the first memory part; an operation control part which makes the heat treatment part follow the 1. The operation condition corresponding to one candidate waveform determined as the reference waveform among the plurality of operation conditions stored in the memory part operates; The operation condition corresponding to one candidate waveform stored in the first memory unit is changed so that the temperature change detected by the detector approaches the reference waveform.

In this heat treatment apparatus, a plurality of candidate waveforms representing the virtual temperature change of the inner plate member during the fixed period from the time when the substrate is placed on the plate member are stored in the first storage unit. In addition, a plurality of operation conditions of the heat treatment section corresponding to the plurality of candidate waveforms, respectively, are stored in the first memory section. One candidate waveform is determined as a reference waveform from among the plurality of candidate waveforms stored in the first storage unit.

After that, the substrate is placed on the plate member, and the placed substrate is heat-treated. In the initial stage of the heat treatment, within a fixed period from the time when the substrate is placed on the plate member, the heat treatment unit operates according to the operating conditions corresponding to one candidate waveform determined as the reference waveform. Also, the temperature change of the plate member is detected. The operating conditions corresponding to one candidate waveform stored in the first memory unit are changed so that the detected temperature change is close to the reference waveform.

In this way, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment section in the initial stage of each heat treatment operates in accordance with the operating conditions changed in the previous heat treatment. Thereby, the temperature change of the plate member immediately after the substrate is placed on the plate member is closer to the reference waveform than the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually corrected to an appropriate temperature change. Therefore, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for heat-treating the substrate.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate is appropriately performed without being affected by temperature changes around the heat treatment apparatus.

Furthermore, according to the above-described configuration, one of the plurality of candidate waveforms is determined as the reference waveform representing the appropriate temperature change of the plate member immediately after the substrate is placed on the plate member. As a result of these, the heat treatment of the substrate can be performed appropriately and with high precision.

(9) It can also be a heat treatment device and further include an operation part, the operation part is operated by the user to select one candidate waveform from a plurality of candidate waveforms memorized in the first memory part; the determination part responds to the user's operation In the operation of the section, one candidate waveform selected from the plurality of candidate waveforms stored in the first storage section by the operation section is determined as the reference waveform.

In this case, the user can easily determine one candidate waveform as the reference waveform from the plurality of candidate waveforms using the operation unit.

(10) The heat treatment apparatus may further include a display control unit that causes the display unit to selectively display at least a part of the plurality of candidate waveforms.

In this case, the user can easily determine one of the candidate waveforms as the reference waveform while checking at least a part of the candidate waveforms displayed on the display unit.

(11) The plurality of candidate waveforms stored in the first storage unit may include a plurality of candidate waveform groups corresponding to the plurality of temperature regions, respectively, and the determination unit may be configured to determine the temperature for heat-treating the substrate as the set temperature and the display control unit causes the display unit to selectively display a plurality of candidate waveforms of the candidate waveform group corresponding to the temperature region to which the determined processing temperature belongs, when the set temperature has been determined by the determination unit.

In this case, the user can easily grasp the selectable candidate waveforms according to the set temperature. Therefore, inappropriate candidate waveforms are prevented from being determined as reference waveforms.

(12) Each of the plurality of operating conditions stored in the first memory unit may include the value of one or a plurality of control parameters, and the condition changing unit may change the first memory so that the detected temperature change is close to the reference waveform The value of at least one of the operating conditions corresponding to one candidate waveform or at least one of the plurality of control parameters is stored in the part.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted by a simple process of changing the value of at least one of the one or more control parameters.

(13) A heat treatment system according to still another aspect of the present invention includes: a heat treatment apparatus according to an aspect of the present invention; an information acquisition unit that acquires processing information related to a substrate that has been heat treated by the heat treatment apparatus; 2. a memory unit that stores a predetermined correspondence between the processing information and the plurality of candidate waveforms; and a waveform update unit that is based on the corresponding relationship between the processing information acquired by the information acquisition unit and the memory in the second memory unit so as to match the The reference waveform is updated in such a way that the candidate waveform corresponding to the processing information obtained by the information obtaining unit becomes the reference waveform.

According to the thermal processing system, the reference waveform is updated based on the acquired processing information. Thereby, the heat treatment of the substrate can be performed more appropriately and with high precision using the heat treatment apparatus.

(14) A heat treatment method according to a further aspect of the present invention for heat treating a substrate, comprising the following steps: placing the substrate on the plate member; heat treating the placed substrate through the plate member by the heat treatment part; The operation conditions of the heat treatment part are stored in the part for a fixed period from the time when the substrate is placed on the plate member; the heat treatment part is operated according to the operation conditions memorized in the memory part; When the part operates according to the operating conditions, the operating conditions stored in the memory part are changed so that the temperature change detected by the temperature detector is close to the predetermined reference waveform.

In this heat treatment method, the substrate is placed on the plate member, and the placed substrate is subjected to heat treatment. In the initial stage of the heat treatment, within a fixed period from the time when the substrate is placed on the plate member, the heat treatment section operates according to the operating conditions memorized in the memory section. Also, the temperature change of the plate member is detected. The operating conditions stored in the memory section are changed so that the detected temperature change is close to the reference waveform.

In this way, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment section in the initial stage of each heat treatment operates in accordance with the operating conditions changed in the previous heat treatment. Thereby, the temperature change of the plate member immediately after the substrate is placed on the plate member is closer to the reference waveform than the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually corrected to an appropriate temperature change. Therefore, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for heat-treating the substrate.

Moreover, according to the above-mentioned method, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate W is appropriately performed without being affected by temperature changes around the heat treatment apparatus. As a result of these, the heat treatment of the substrate can be performed quickly and with high precision.

(15) The operating condition may also include the value of one or more control parameters, and the step of changing the operating condition includes: changing one or more of the control parameters stored in the memory so that the detected temperature change is close to the reference waveform. at least 1 value.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted by a simple process of changing the value of at least one of the one or more control parameters.

(16) A heat treatment method according to a further aspect of the present invention for heat treating a substrate, comprising the following steps: placing the substrate on the plate member; heat treating the placed substrate through the plate member by the heat treatment part; Plural candidate waveforms of virtual temperature changes of the plate member during a fixed period from the time when the substrate is placed on the plate member, and a plurality of operation conditions of the heat treatment section corresponding to the plurality of candidate waveforms are stored in the first memory section ; Detecting the temperature of the plate member by a temperature detector; Determining one candidate waveform as a reference waveform from a plurality of candidate waveforms stored in the first memory portion; The operation condition corresponding to one candidate waveform determined as the reference waveform is operated; and the first waveform is changed so that the temperature change detected by the temperature detector when the heat treatment section operates according to the operation condition corresponding to the one candidate waveform is close to the reference waveform The operation condition corresponding to one candidate waveform is stored in the memory unit.

In this heat treatment method, a plurality of candidate waveforms representing virtual temperature changes of the inner plate member during a fixed period from the time when the substrate is placed on the plate member are stored in the first storage portion. In addition, a plurality of operation conditions of the heat treatment section corresponding to the plurality of candidate waveforms, respectively, are stored in the first memory section. One candidate waveform is determined as a reference waveform from among the plurality of candidate waveforms stored in the first storage unit.

After that, the substrate is placed on the plate member, and the placed substrate is heat-treated. In the initial stage of the heat treatment, within a fixed period from the time when the substrate is placed on the plate member, the heat treatment unit operates according to the operating conditions corresponding to one candidate waveform determined as the reference waveform. Also, the temperature change of the plate member is detected. The operating conditions corresponding to one candidate waveform stored in the first memory unit are changed so that the detected temperature change is close to the reference waveform.

In this way, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment section in the initial stage of each heat treatment operates in accordance with the operating conditions changed in the previous heat treatment. Thereby, the temperature change of the plate member immediately after the substrate is placed on the plate member is closer to the reference waveform than the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually corrected to an appropriate temperature change. Therefore, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for heat-treating the substrate.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate is appropriately performed without being affected by temperature changes around the heat treatment apparatus.

Furthermore, according to the above-described configuration, one of the plurality of candidate waveforms is determined as the reference waveform representing the appropriate temperature change of the plate member immediately after the substrate is placed on the plate member. As a result of these, the heat treatment of the substrate can be performed appropriately and with high precision.

(17) The step of determining one candidate waveform as the reference waveform may also include determining one candidate waveform selected from the plurality of candidate waveforms memorized in the first memory portion by the operating portion in response to the operation of the operating portion by the user is the reference waveform.

In this case, one candidate waveform can be easily determined as a reference waveform from a plurality of candidate waveforms using the operation unit.

(18) The heat treatment method may further include the step of selectively displaying at least a part of the plurality of candidate waveforms on the display unit.

In this case, one candidate waveform can be easily determined as the reference waveform while checking at least a part of the candidate waveforms displayed on the display unit.

(19) The plurality of candidate waveforms stored in the first memory unit may include a plurality of candidate waveform groups corresponding to a plurality of temperature regions, respectively, and the heat treatment method may further include determining a temperature for heat treatment of the substrate as a set temperature. The step of causing the display unit to selectively display at least a part of the plurality of candidate waveforms includes: when the set temperature has been determined, causing the display unit to selectively display the candidate corresponding to the temperature region to which the determined processing temperature belongs A plurality of candidate waveforms of the waveform group.

In this case, the selectable candidate waveforms can be easily grasped according to the set temperature. Therefore, inappropriate candidate waveforms are prevented from being determined as reference waveforms.

(20) Each of the plurality of operating conditions stored in the first memory portion may include the value of one or a plurality of control parameters, and the step of changing the operating condition corresponding to one candidate waveform may include: changing the detected temperature To approach the reference waveform, the value of at least one of the operating conditions corresponding to one candidate waveform stored in the first memory unit or at least one of the plurality of control parameters is changed.

In this case, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted by a simple process of changing the value of at least one of the one or more control parameters.

(21) The heat treatment method may further include the steps of: acquiring processing information related to the substrate that has been heat-treated; storing the predetermined correspondence between the processing information and the plurality of candidate waveforms in the second memory; and The corresponding relationship between the processing information acquired in the acquiring step and the memory in the second memory unit is stored, and the reference waveform is updated so that the candidate waveform corresponding to the acquired processing information becomes the reference waveform.

In this case, the reference waveform is updated according to the acquired processing information. Thereby, the heat treatment of the substrate can be performed more appropriately and with high precision using the heat treatment apparatus.

[1] The first embodiment Hereinafter, the heat treatment apparatus and the heat treatment method of the first embodiment will be described with reference to the drawings. In the following description, substrates refer to substrates for FPD (Flat Panel Display), semiconductor substrates, optical disk substrates, and magnetic disks used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates or solar cell substrates, etc. In the following description, as an example of a heat treatment apparatus, a heat treatment apparatus for heat-treating a substrate will be described.

(1) The structure of the heat treatment device FIG. 1 is a schematic side view showing the configuration of the heat treatment apparatus according to the first embodiment. As shown in FIG. 1 , the heat treatment apparatus 100 includes a heat treatment plate 10 , an active cooling plate 20 , a passive cooling plate 30 , a lifting device 40 and a control device 50 .

The heat treatment plate 10 is a metal heat transfer plate having a flat cylindrical shape, and has a flat upper surface and a lower surface. The upper surface of the heat treatment plate 10 is configured to be a substrate W to be placed on the heat treatment object, and has an outer diameter larger than the outer diameter of the substrate W. As shown in FIG. On the upper surface of the heat-treating plate 10, a plurality of proximity balls and the like are arranged to support the lower surface of the substrate W. As shown in FIG. In FIG. 1, the board|substrate W mounted on the heat-processing board 10 is shown by the single-dot chain line.

The heat treatment plate 10 is provided with a heater 11 and a temperature sensor 19 . The temperature sensor 19 detects the temperature of the upper surface of the heat treatment plate 10, and outputs a detection signal corresponding to the detected temperature to the temperature acquiring unit 55 described later.

The heater 11 includes, for example, a mica heater, a Peltier element, or the like. A heat generating drive unit 13 is connected to the heater 11 . The heat generating drive unit 13 drives the heater 11 so as to maintain the temperature of the heat treatment plate 10 at a preset temperature (set temperature) for performing the heat treatment of the substrate W, for example. Moreover, the heat generating drive part 13 drives the heater 11 so that the temperature of the heat-processing board 10 may be raised or lowered, for example.

The active cooling plate 20 is arranged at a position lower than the heat treatment plate 10 to be spaced apart from the lower surface of the heat treatment plate 10 by a predetermined distance. The active cooling plate 20 has an upper surface facing the heat treatment plate 10 . A thermally conductive sheet (not shown) with high thermal conductivity is disposed on the upper surface of the active cooling plate 20 .

A cooling mechanism 21 is provided on the active cooling plate 20 . The cooling mechanism 21 includes, for example, a cooling water passage or a Peltier element formed in the active cooling plate 20 . A cooling drive unit 22 is connected to the cooling mechanism 21 . The cooling driving part 22 drives the cooling mechanism 21 so that the temperature of the upper surface of the active cooling plate 20 is lower than the temperature of the heat treatment plate 10 .

The passive cooling plate 30 is supported by the lifting device 40 in the space between the heat treatment plate 10 and the active cooling plate 20 to move up and down (refer to the hollow arrow in FIG. 1 ). The passive cooling plate 30 is a metal disk-shaped member, and has an upper surface and a lower surface. The upper surface of the passive cooling plate 30 is opposite to the lower surface of the heat treatment plate 10 , and the lower surface of the passive cooling plate 30 is opposite to the upper surface of the active cooling plate 20 . A thermally conductive sheet (not shown) with high thermal conductivity is disposed on the upper surface of the passive cooling plate 30 .

The elevating device 40 includes, for example, an air cylinder. An elevating drive unit 41 is connected to the elevating device 40 . The elevating drive unit 41 drives the elevating device 40 such that the passive cooling plate 30 and the active cooling plate 20 are brought into contact with each other, for example. In this case, the passive cooling plate 30 is cooled by the active cooling plate 20 . Moreover, the raising/lowering drive part 41 drives the raising/lowering apparatus 40 so that the passive cooling plate 30 may contact with the heat processing board 10, for example. In this case, the heat treatment plate 10 is cooled by the passive cooling plate 30 .

The control device 50 controls the operation of each component of the heat treatment apparatus 100 including the heat generating drive unit 13 , the cooling drive unit 22 , and the lift drive unit 41 . Details of the control device 50 will be described below. Furthermore, in the heat treatment apparatus 100 described above, a transfer mechanism (not shown) for transferring the substrates W is further provided between the heat treatment plate 10 and an external device (eg, a transfer robot) of the heat treatment apparatus 100 .

(2) Heat treatment of a plurality of substrates W in the heat treatment apparatus 100 In the heat treatment apparatus 100 of FIG. 1 , the plurality of substrates W are sequentially subjected to heat treatment at a set temperature corresponding to the content of the respective heat treatments. FIG. 2 is a diagram showing an example of a temperature change of the heat treatment plate 10 when a plurality of substrates W are sequentially heat treated.

In the graph shown in FIG. 2, the vertical axis represents the temperature of the heat-treated plate 10, and the horizontal axis represents the time. In addition, the temperature change of the heat-treated plate 10 is shown by a thick solid line. In this example, with respect to 9 substrates W, the content of the heat treatment was changed every 3 substrates W. As shown in FIG. Therefore, the set temperature of the heat treatment plate 10 is changed every three substrates W. As shown in FIG.

Specifically, during the period from time point t1 to t2 , the three substrates W are sequentially heat-treated while the temperature of the heat-treatment plate 10 is maintained at the set temperature of 90°C. Moreover, during the period from time point t3 to t4, the heat treatment of the three substrates W was sequentially performed in a state in which the temperature of the heat treatment plate 10 was maintained at the set temperature of 115°C. Furthermore, during the period from time t5 to t6, the three substrates W were sequentially heat-treated while the temperature of the heat-treatment plate 10 was maintained at the set temperature of 140°C.

When the untreated substrate W is placed on the heat-treating plate 10 kept at the set temperature, the temperature of the heat-treating plate 10 is lowered from the set temperature as indicated by the hollow arrow in FIG. 2 . In this case, the temperature drop amount of the heat-treated plate 10 differs depending on the set temperature. The higher the set temperature, the larger the temperature drop amount, and the lower the set temperature, the smaller the temperature drop amount.

After the substrate W is placed on the heat treatment plate 10, if the temperature of the heat treatment plate 10 is maintained to deviate from the set temperature, the substrate W cannot be accurately subjected to the predetermined heat treatment. Then, after the untreated substrate W is placed on the heat treatment plate 10, the temperature of the heat treatment plate 10 is controlled so that the temperature of the heat treatment plate 10 quickly returns to the set temperature and is stabilized at the set temperature.

Specifically, in this example, PID (Proportional Integral Derivative) control is performed on the heater 11 based on the detection signal of the temperature sensor 19 . In addition, the upper limit of the output of the heater 11 is adjusted.

For each of the plurality of set temperatures, the operating conditions of the heat treatment apparatus 100 for returning the temperature of the heat treatment plate 10 to the set temperature can be obtained by simulation, experiment, or the like. Therefore, in the heat treatment apparatus 100, the operation conditions of the heater 11 (hereinafter referred to as initial operation conditions) for a fixed period from the time when the substrate W is placed on the heat treatment plate 10 are preset for each of the plurality of set temperatures.

FIG. 3 is a diagram showing an example of initial operating conditions set for each of a plurality of set temperatures. The initial operating conditions of FIG. 3 include the values of parameters for the PID control of the heater 11 . In addition, the initial operating condition includes the value of the upper limit parameter indicating the upper limit of the output of the heater 11 . In Fig. 3, the upper limit parameter is expressed as "heater upper limit". The value of the upper limit parameter is represented by, for example, a ratio (%) to the upper limit of the output allowed by the rated output of the heater 11 .

According to the example of FIG. 3 , the initial operating conditions corresponding to the set temperature of 90°C include the proportional parameter "0.4", the integral parameter "15", the differential parameter "3" and the upper limit parameter "80(%)". In addition, the initial operating conditions corresponding to the set temperature of 115°C include the proportional parameter "0.3", the integral parameter "15", the differential parameter "3", and the upper limit parameter "90(%)". Furthermore, the initial operating conditions corresponding to the set temperature of 140°C include the proportional parameter "0.2", the integral parameter "15", the differential parameter "3", and the upper limit parameter "100(%)".

However, depending on the temperature of the space in which the heat treatment apparatus 100 is installed, the preset initial operating conditions may not be appropriate. In addition, it is assumed that the substrate processing apparatus 400 ( FIG. 7 ), which will be described later, uses a plurality of heat treatment apparatuses 100 to perform a common heat treatment on a plurality of substrates W. As shown in FIG. In this case, there are usually individual differences among the plurality of thermal processing apparatuses 100 . Therefore, if common initial operating conditions are set for the plurality of heat treatment apparatuses 100 , there is a possibility that ideal temperature adjustment cannot be performed in each of the heat treatment apparatuses 100 .

Therefore, in the heat treatment apparatus 100 of the present embodiment, each time the heat treatment of the substrate W is performed, the initial operating conditions are changed so that the temperature change of the heat treatment plate 10 within a fixed period from the time when the substrate W is placed is close to the ideal reference waveform . The reference waveform is determined so that the temperature of the heat treatment plate 10 lowered by placing the substrate W is quickly recovered and stabilized to the set temperature. In addition, the reference waveform is determined for each set temperature based on, for example, the configuration of the heat treatment plate 10 and the heat generating capacity of the heater 11 .

Here, it is assumed that a reference waveform corresponding to a set temperature of 90° C. and having an overshoot amount of 0 with respect to the set temperature of 90° C. is set. For example, when the first substrate W shown in FIG. 2 is subjected to heat treatment at a set temperature of 90° C., the heat treatment apparatus 100 operates according to predetermined initial operating conditions. In this case, if the temperature change of the heat treatment plate 10 has a large overshoot, the initial operating conditions corresponding to the set temperature of 90° C. are changed so that the overshoot amount is close to 0. FIG. After that, when the second substrate W is heat-treated at the set temperature of 90° C., the heat treatment apparatus 100 is operated in accordance with the initial operating conditions after the change. Thereby, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is closer to the reference waveform than that during the heat treatment of the first substrate W. Therefore, in the heat treatment of the second substrate W, after the substrate W is placed on the heat treatment plate 10, the temperature of the heat treatment plate 10 returns to the set temperature quickly and accurately compared with the heat treatment of the first substrate W.

In addition, if the temperature change of the heat treatment plate 10 exceeds again when the second substrate W is heat-treated at the set temperature of 90° C., the initial stage corresponding to the set temperature of 90° C. is changed again so that the excess amount is closer to 0. Action condition. After that, when the third substrate W is heat-treated at the set temperature of 90° C., the heat treatment apparatus 100 operates in accordance with the initial operating conditions after the change. Thereby, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is closer to the reference waveform than that during the heat treatment of the second substrate W. Therefore, in the heat treatment of the third substrate W, after the substrate W is placed on the heat treatment plate 10, the temperature of the heat treatment plate 10 returns to the set temperature quickly and accurately compared with the heat treatment of the second substrate W.

In the example of FIG. 2 , for the initial operating conditions corresponding to the set temperatures of 115° C. and 140° C., similarly to the example of the case of the set temperature of 90° C., the heat treatment of the substrate W is performed every time the heat treatment of the substrate W is performed. Changes in initial operating conditions in response to temperature changes.

As described above, each time the substrate W is heat-treated, the initial operating conditions are changed in accordance with the real-time temperature change of the heat-treatment plate 10 . In this case, as the heat treatment of the substrate W is repeatedly performed, the accuracy of the heat treatment is improved. In addition, according to the above-mentioned control, when the plurality of heat treatment apparatuses 100 are used to perform a common heat treatment on the plurality of substrates W, variation in the heat treatment of the substrate W among the plurality of heat treatment apparatuses 100 is suppressed.

(3) Specific example of modification of initial operating conditions FIG. 4 is a diagram for explaining a specific modification example of the initial operating conditions. In the graph shown in the upper part of FIG. 4 , the vertical axis represents temperature, and the horizontal axis represents time. In addition, in the graph, an example of the temperature change of the heat treatment plate 10 detected by the temperature sensor 19 of FIG. 1 during the heat treatment of one substrate W is shown by a thick solid line. The waveform shown by the thick solid line is called an actual measurement waveform. Furthermore, in the graph shown in the upper part of FIG. 4 , the reference waveform determined in advance corresponding to the set temperature of the heat treatment in this example is represented by a single-dotted chain line.

In this example, at the time point t0, the heat treatment plate 10 maintains the value α of the set temperature, and thereafter the substrate W is placed on the heat treatment plate 10 at the time point t10 to start the heat treatment. The reference waveform is from the time point t10 to the time point t11, the value α of the set temperature decreases to the value β lower than the value α, and from the time point t11 to the time point t12, the value β rises to the value α. Furthermore, after the time point t12, the reference waveform is held at the value α after slightly exceeding the value α for an extremely short period of time. It is assumed that the overshoot of the reference waveform with respect to the value α is substantially zero. In the following description, the time from the time point t10 when the substrate W is placed on the heat treatment plate 10 to the time point t12 when the reference waveform returns to the value α of the set temperature is referred to as a set time.

In the example in the upper part of Fig. 4, the measured waveform deviates greatly from the reference waveform. Specifically, the measured waveform decreases from the value α of the set temperature to the value γ lower than the value β from the time point t10 to the time point t11, and increases from the value γ to the value α from the time point t11 to the time point t13 before the time point t12. In addition, the measured waveform immediately after the time point t13 greatly exceeds the value α. Therefore, it takes a relatively long time for the measured waveform to stabilize after the time point t12 elapses.

To change the initial operating conditions, for example, acquire the value γ of the measured waveform at a predetermined time (in this example, the time when the reference waveform takes a minimum value) t11 in the period from time t10 to time t12 . The acquired value γ is compared with the value β of the reference waveform at the time point t11. In addition, the time pr from the time point t10 to the time point t13 of the actually measured waveform recovery value α is acquired. In the following description, the time pr corresponding to the actually measured waveform is referred to as the arrival time. Furthermore, the overrun OS with respect to the value α of the measured waveform generated immediately after the time point t13 is acquired.

When the value γ of the measured waveform at the time point t11 is outside the predetermined allowable range for the value of the measured waveform, the measured waveform deviates significantly from the reference waveform. Therefore, it is desirable to change the initial operating conditions. Then, when the value γ of the measured waveform at the time point t11 is outside the allowable range and the value γ is lower than the value β, the initial operating conditions are changed so as to increase the amount of heat supplied to the heat treatment plate 10 . Thereby, the value of the measured waveform is made close to the value of the reference waveform. On the other hand, when the value γ of the measured waveform at the time point t11 is outside the allowable range and the value γ is higher than the value β, the initial operating conditions are changed so as to reduce the amount of heat supplied to the heat treatment plate 10 . Thereby, the value of the measured waveform is made close to the value of the reference waveform.

Moreover, when the arrival time pr is outside the allowable range predetermined for the arrival time, the measured waveform deviates significantly from the reference waveform. Therefore, it is desirable to change the initial operating conditions. Then, when the arrival time pr is outside the allowable range and the arrival time pr is shorter than the set time, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 is reduced. Thereby, the arrival time pr is brought close to the set time. On the other hand, when the arrival time pr is outside the allowable range and the arrival time pr is longer than the set time, the initial operating conditions are changed so as to increase the amount of heat supplied to the heat treatment plate 10 . Thereby, the arrival time pr is brought close to the set time.

Furthermore, when the obtained overrun OS exceeds a predetermined allowable range for the overrun OS, the measured waveform deviates significantly from the reference waveform. Therefore, it is desirable to change the initial operating conditions. Then, when the excess amount OS exceeds the allowable range, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 is reduced. Thereby, the excess OS is reduced.

In the graph shown in the lower part of FIG. 4, the vertical axis represents the output of the heater 11, and the horizontal axis represents time. In addition, in this graph, the output waveform of the heater 11 which is controlled according to the preset initial operating condition is shown by a thick solid line. The output waveform corresponds to the measured waveform shown in the upper graph of FIG. 4 . In this example, the output of the heater 11 maintains a fixed value SP during the period from the time point t0 to the time point t10. After that, the output of the heater 11 increases at time t10, and is adjusted by PID control based on the initial operating conditions.

Here, in the case of reducing the amount of heat supplied to the heat treatment plate 10, for example, by increasing the value of the proportional parameter of the PID control, as shown by the hollow arrow a13 in FIG. can be lowered. Alternatively, for example, by reducing the upper limit parameter, as indicated by the hollow arrow a14 in FIG. 4 , the value MP of the upper limit of the output of the heater 11 is reduced.

On the other hand, in the case of increasing the amount of heat supplied to the heat treatment plate 10, for example, by decreasing the value of the proportional parameter of the PID control, as indicated by the hollow arrow a15 in FIG. 4, the output waveform of the heater 11 is reduced. The overall height can be increased. Alternatively, for example, by increasing the upper limit parameter, as shown by the hollow arrow a16 in FIG. 4 , the upper limit value MP of the output of the heater 11 may be increased.

(4) Control device 50 As shown in FIG. 1 , the control device 50 includes a memory unit 51 , a heat generation control unit 52 , a cooling control unit 53 , a lift control unit 54 , a temperature acquisition unit 55 , and a condition change unit 56 as functional units. The control device 50 includes a CPU (Central Processing Unit, central processing unit), a RAM (Random Access Memory, random access memory), and a ROM (Read Only Memory, read only memory). The CPU executes a computer program (a program for temperature adjustment processing described later) stored in the ROM or other storage medium, thereby realizing the above-mentioned functional units. Furthermore, a part or all of the functional components of the control device 50 may be realized by hardware such as electronic circuits.

In the control apparatus 50 of 1st Embodiment, the memory|storage part 51 memorize|stores the initial operation conditions set in advance for each of a plurality of set temperatures. The heat generation control unit 52 controls the heat generation drive unit 13 based on the detection signal output from the temperature sensor 19 so as to operate according to the initial operating conditions memorized in the memory unit 51 at the initial stage of the heat treatment of the substrate W by the heat treatment plate 10 . The cooling control unit 53 controls the cooling drive unit 22 to cool the active cooling plate 20 during the power-on period of the heat treatment apparatus 100 . The lift control unit 54 controls the lift device 40 so that the passive cooling plate 30 contacts the heat treatment plate 10 when the set temperature of the heat treatment plate 10 is lowered.

Moreover, in the control apparatus 50 of 1st Embodiment, the temperature acquisition part 55 acquires the temperature of the heat processing board 10 based on the detection signal output from the temperature sensor 19. More specifically, the temperature acquisition unit 55 acquires the change in temperature by sampling the detection signal output from the temperature sensor 19 at a fixed period. The condition changing unit 56 changes the initial operating conditions stored in the memory unit 51 so that the temperature change acquired by the temperature acquiring unit 55 is close to a predetermined reference waveform.

In addition, the heat processing apparatus 100 is provided with the operation part which is not shown in figure. The user can store the initial operating conditions and the reference waveform in the memory unit 51 for each set temperature by operating the operation unit. That is, the user can set the initial operating conditions and the reference waveform for each of the plurality of set temperatures.

(5) Temperature adjustment treatment The change of the initial operating conditions stored in the memory unit 51 is performed by causing the control device 50 of FIG. 1 to execute the following temperature adjustment process. 5 and 6 are flowcharts showing an example of the temperature adjustment process. The temperature adjustment process is started by turning on the power supply of the heat treatment apparatus 100 .

First, the heat generation control unit 52 and the lift control unit 54 of FIG. 1 control the heat generation drive unit 13 or the lift drive unit 41 to keep the temperature of the heat treatment plate 10 at the set temperature (step S10). Here, the value of the set temperature of the heat treatment plate 10 is given to the control device 50 from the outside of the heat treatment device 100 , for example.

Next, the heat generation control part 52 determines whether the board|substrate W is mounted on the heat processing board 10 (step S11). This determination is performed, for example, based on whether or not a signal indicating that the substrate W is placed on the heat treatment plate 10 from outside the heat treatment apparatus 100 is received. Alternatively, when the heat treatment apparatus 100 is provided with a sensor for detecting the presence or absence of the substrate W on the heat treatment plate 10, the heat generation control unit 52 may also perform the above determination based on the output of the sensor.

When the substrate W is not placed on the heat treatment plate 10, the heat generation control unit 52 and the lift control unit 54 return to the process of step S10. On the other hand, when the substrate W is placed on the heat treatment plate 10, the heat generation control unit 52 reads the initial operating conditions corresponding to the current set temperature from the memory unit 51 of FIG. 1 (step S12).

Next, the heat generation control unit 52 controls the heat generation drive unit 13 based on the read initial operating conditions and the output of the temperature sensor 19, thereby adjusting the temperature of the heat treatment plate 10 (step S13). At this time, the temperature acquisition unit 55 acquires the temperature change of the heat treatment plate 10 during the heat treatment of the substrate W (step S14).

After that, when the heating process of the substrate W is completed, the condition changing unit 56 determines, based on the acquired temperature change, whether or not the arrival time pr ( FIG. 4 ) in the heating process is outside the allowable range predetermined for the arrival time pr (step 1). S15). Furthermore, the allowable range used in step S15 may also be the set time. That is, the allowable range used in step S15 may be determined so that only the arrival time pr is allowed to match the set time.

When the arrival time pr deviates from the allowable range, the condition changing unit 56 calculates the difference between the arrival time pr in the heating process and the set time of the reference waveform (step S16). On the other hand, when the arrival time pr is within the allowable range, the condition changing unit 56 determines, based on the acquired temperature change, whether or not the temperature value at a specific point in the heating process is within the allowable range predetermined for the temperature value. outside (step S17). Furthermore, the allowable range used in step S17 may also be the temperature value of the reference waveform at a specific time point. That is, the allowable range used in step S17 may also be determined to allow only the real-time temperature value at a specific time point to be consistent with the temperature value of the reference waveform.

When the temperature value deviates from the allowable range, the condition changing unit 56 calculates the difference between the temperature value acquired at a specific time point and the temperature value of the reference waveform based on the acquired temperature change (step S18 ). On the other hand, when the temperature value is within the allowable range, the condition changing unit 56 determines whether the overrun OS in the heating process is outside the allowable range predetermined for the overrun OS (step S19). Furthermore, the allowable range used in step S19 may also be 0. That is, the allowable range used in step S19 may be determined only to allow and not to exceed.

When the overrun OS deviates from the allowable range, the condition changing unit 56 calculates the difference between the acquired overrun OS and the overrun of the reference waveform based on the acquired temperature change (step S20 ). On the other hand, when the overrun amount OS is within the allowable range, the heat generation control unit 52 and the lift control unit 54 return to the process of step S10.

After any one of the above steps S16, S18, and S20, the condition changing unit 56 determines the parameter to be changed in the initial operating condition based on the calculated time, temperature value, or the difference between the overruns (step S21). For example, the condition changing unit 56 determines the parameter to be changed based on the level of the calculated difference. Specifically, when the level of the difference is high, the condition changing unit 56 determines the proportional parameter of the PID control as the parameter to be changed. In addition, the condition changing unit 56 determines the upper limit parameter as the parameter to be changed when the level of the difference is low.

Next, the condition changing unit 56 changes the parameter to be changed according to a predetermined method (step S22). For example, the condition changing unit 56 changes the value of the parameter determined to be the target of change by a predetermined value. Thereby, the initial operating conditions memorized in the memory unit 51 are changed. After that, the heat generation control unit 52 and the lift control unit 54 return to the process of step S10.

In the above-mentioned temperature adjustment processing, a part of the processing in steps S15, S17, and S19 may be omitted. In this case, the calculation process of the difference (any one of steps S16, S18, and S20) accompanying the omitted process is also omitted.

(6) Effects of the first embodiment In the heat treatment apparatus 100 described above, the substrate W is placed on the heat treatment plate 10, and the placed substrate W is heat treated. In the initial stage of the heat treatment, the heater 11 operates according to the initial operating conditions memorized in the memory portion 51 within a fixed period from the time when the substrate W is placed on the heat treatment plate 10 . In addition, the temperature change of the heat-treated plate 10 is detected. The initial operating conditions memorized in the memory unit 51 are changed so that the detected temperature change is close to the reference waveform.

As a result, when the plurality of substrates W are sequentially subjected to heat treatment, at the initial stage of each heat treatment, the heater 11 is operated in accordance with the initial operating conditions changed during the previous heat treatment. As a result, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is closer to the reference waveform than at the time of the previous heat treatment.

In this way, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is gradually corrected to an appropriate temperature change. Therefore, the temperature of the heat treatment plate 10 immediately after the substrate W is placed is quickly adjusted to an appropriate temperature for the heat treatment of the substrate W.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus 100 changes, the initial operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate W is appropriately performed without being affected by temperature changes around the heat treatment apparatus 100 . As a result of these, the heat treatment of the substrate can be performed quickly and with high precision.

(7) A substrate processing apparatus including the thermal processing apparatus 100 of FIG. 1 FIG. 7 is a schematic block diagram showing an example of a substrate processing apparatus including the thermal processing apparatus 100 of FIG. 1 . As shown in FIG. 7 , the substrate processing apparatus 400 is provided adjacent to the exposure apparatus 500 , and includes a control unit 410 , a coating processing unit 420 , a developing processing unit 430 , a heat treatment unit 440 , and a substrate conveying device 450 . The heat treatment unit 440 includes a plurality of the heat treatment apparatuses 100 of FIG. 1 for heating the substrate W, and a plurality of cooling plates (not shown) for only cooling the substrate W.

The control unit 410 includes, for example, a CPU, a memory, or a microcomputer, and controls the operations of the coating processing unit 420 , the developing processing unit 430 , the heat treatment unit 440 , and the substrate transfer device 450 .

The substrate transfer apparatus 450 transfers the substrate W between the coating processing unit 420 , the developing processing unit 430 , the thermal processing unit 440 and the exposure apparatus 500 when the substrate W is processed by the substrate processing apparatus 400 .

The coating treatment section 420 forms a resist film on one surface of the untreated substrate W (coating treatment). In the exposure apparatus 500, exposure processing is performed on the substrate W after the coating processing on which the resist film is formed. The development processing unit 430 performs the development processing of the substrate W by supplying a developing solution to the substrate W subjected to the exposure processing by the exposure device 500 . The heat treatment part 440 performs heat treatment of the substrate W before and after the coating process by the coating process part 420 , the development process by the development process part 430 , and the exposure process by the exposure device 500 .

Furthermore, the coating processing unit 420 may also form an anti-reflection film on the substrate W. As shown in FIG. In this case, a processing unit for an adhesion strengthening process for improving the adhesion between the substrate W and the antireflection film may also be provided in the heat treatment section 440 . In addition, the coating processing unit 420 may also form a resist cover film on the substrate W for protecting the resist film formed on the substrate W. As shown in FIG.

As described above, the temperature adjustment process is performed in the plurality of heat treatment apparatuses 100 of the heat treatment unit 440 . As a result, the plurality of substrates W can be heat-treated with high precision and uniformity. In addition, even when a plurality of substrates W are subjected to a common heat treatment by a plurality of heat treatment apparatuses 100 having individual differences from each other, the plurality of substrates W can be heat treated with high precision and uniformity.

[2] Second Embodiment Hereinafter, the heat treatment apparatus and the heat treatment method of the second embodiment will be described with reference to the drawings. (1) The structure of the heat treatment device

Fig. 8 is a schematic side view showing the configuration of the heat treatment apparatus according to the second embodiment. As shown in FIG. 8 , the heat treatment apparatus 100 includes a heat treatment plate 10 , an active cooling plate 20 , a passive cooling plate 30 , a lifting device 40 , a control device 50 , an operation unit 61 and a display unit 62 .

The heat treatment plate 10 is a metal heat transfer plate having a flat cylindrical shape, and has a flat upper surface and a lower surface. The upper surface of the heat treatment plate 10 is configured so that the substrate W to be heat treated can be placed, and has an outer diameter larger than the outer diameter of the substrate W. As shown in FIG. On the upper surface of the heat treatment plate 10 , a plurality of proximity balls and the like are disposed on the lower surface of the support substrate W. As shown in FIG. In FIG. 8, the board|substrate W mounted on the heat-processing board 10 is shown by the single-dot chain line.

A heater 11 and a temperature sensor 19 are provided on the heat treatment plate 10 . The temperature sensor 19 detects the temperature of the upper surface of the heat treatment plate 10, and outputs a detection signal corresponding to the detected temperature to the temperature acquiring unit 55 described later.

The heater 11 includes, for example, a mica heater, a Peltier element, or the like. A heat generating drive unit 13 is connected to the heater 11 . The heat generating drive unit 13 drives the heater 11 such that, for example, the temperature of the heat treatment plate 10 is maintained at a predetermined temperature (set temperature) for performing the heat treatment of the substrate W. Moreover, the heat generating drive part 13 drives the heater 11 so that the temperature of the heat-processing board 10 may be raised or lowered, for example.

The active cooling plate 20 is arranged at a position lower than the heat treatment plate 10 to be spaced apart from the lower surface of the heat treatment plate 10 by a predetermined distance. The active cooling plate 20 has an upper surface facing the heat treatment plate 10 . A thermally conductive sheet (not shown) with high thermal conductivity is disposed on the upper surface of the active cooling plate 20 .

A cooling mechanism 21 is provided on the active cooling plate 20 . The cooling mechanism 21 includes, for example, a cooling water passage or a Peltier element formed in the active cooling plate 20 . A cooling drive unit 22 is connected to the cooling mechanism 21 . The cooling driving part 22 drives the cooling mechanism 21 so that the temperature of the upper surface of the active cooling plate 20 is lower than the temperature of the heat treatment plate 10 .

The passive cooling plate 30 is supported by the lifting device 40 to move up and down in the space between the heat treatment plate 10 and the active cooling plate 20 (refer to the hollow arrow in FIG. 8 ). The passive cooling plate 30 is a metal disc-shaped member, and has an upper surface and a lower surface. The upper surface of the passive cooling plate 30 is opposite to the lower surface of the heat treatment plate 10 , and the lower surface of the passive cooling plate 30 is opposite to the upper surface of the active cooling plate 20 . A thermally conductive sheet (not shown) with high thermal conductivity is disposed on the upper surface of the passive cooling plate 30 .

The elevating device 40 includes, for example, an air cylinder. An elevating drive unit 41 is connected to the elevating device 40 . The elevating drive unit 41 drives the elevating device 40 such that the passive cooling plate 30 and the active cooling plate 20 are brought into contact with each other, for example. In this case, the passive cooling plate 30 is cooled by the active cooling plate 20 . Moreover, the raising/lowering drive part 41 drives the raising/lowering apparatus 40 so that the passive cooling plate 30 may contact with the heat processing board 10, for example. In this case, the heat treatment plate 10 is cooled by the passive cooling plate 30 .

The control device 50 controls the operation of each component of the heat treatment device 100 . Details of the control device 50 will be described below. Furthermore, the above-mentioned heat treatment apparatus 100 is further provided with a handover mechanism (not shown) for transferring the substrate W between the heat treatment plate 10 and an external device of the heat treatment apparatus 100 (eg, the substrate transfer apparatus 450 in FIG. 7 ).

The display unit 62 includes, for example, an LCD (Liquid Crystal Display, liquid crystal display) panel or an organic EL (Electro Luminescence, electroluminescence) panel. The display unit 62 displays a setting screen for the user to set the processing conditions of the heating processing of the substrate W as the processing recipe. The details of the setting screen will be described below.

The operation part 61 is, for example, a touch panel provided integrally with the display part 62 , and is configured to be able to input the content of the processing recipe on the setting screen displayed on the display part 62 . In addition, the operation unit 61 is configured to select any one of a plurality of items (a plurality of candidate waveforms described later) displayed on the setting screen. Furthermore, the operation unit 61 may include a keyboard, a mouse, or the like instead of a touch panel, or may include a touch panel, a keyboard, a mouse, and the like.

(2) Heat treatment of a plurality of substrates W in the heat treatment apparatus 100 In the heat treatment apparatus 100 of FIG. 8 , similarly to the example of FIG. 2 , the plurality of substrates W are sequentially subjected to the heat treatment at the set temperature corresponding to the content of each heat treatment. 2, after placing the substrate W on the heat treatment plate 10, if the temperature of the heat treatment plate 10 is maintained to deviate from the set temperature, the substrate W cannot be accurately heat treated. Therefore, in the present embodiment, after the untreated substrate W is placed on the heat treatment plate 10 , control is performed so that the temperature of the heat treatment plate 10 is appropriately returned to the set temperature and stabilized at the set temperature.

In this control, the operation of the heat treatment apparatus 100 is adjusted so that the temperature change of the heat treatment plate 10 exhibits a predetermined appropriate (ideal) waveform within a fixed period from the time when the untreated substrate W is placed on the heat treatment plate 10 . This waveform corresponds to the reference waveform of the first embodiment. Hereinafter, a waveform representing an appropriate temperature change of the heat treatment plate 10 within a fixed period from the time when the untreated substrate W is placed on the heat treatment plate 10 will be referred to as a reference waveform.

The reference waveform is determined according to the type of the substrate W to be heat-treated, the purpose of the heat-treatment, the set temperature, and the like. Therefore, even when the plurality of substrates W are subjected to heat treatment at a common set temperature, the plurality of reference waveforms corresponding to the plurality of substrates W do not necessarily agree with each other.

Therefore, in the heat treatment apparatus 100 of the present embodiment, a plurality of waveforms that can be used as reference waveforms are stored in the memory unit 51 of FIG. 8 as a plurality of candidate waveforms. One candidate waveform selected by the user from a plurality of candidate waveforms is determined as the reference waveform.

FIG. 9 is a diagram showing an example of a plurality of candidate waveforms stored in the storage unit 51 of FIG. 8 . In the example of FIG. 9 , a plurality of candidate waveforms A to H different from each other are stored in the memory unit 51 of FIG. 8 . Furthermore, in the example of FIG. 9 , each of a plurality of temperature regions predetermined for the set temperature is associated with a plurality of candidate waveforms.

Specifically, a temperature range of 80° C. or higher and less than 110° C. is associated with the two candidate waveforms A and B. FIG. The candidate waveforms A and B are different from each other when the temperature of the heat-treating plate 10 drops from the set temperature pt and returns to the set temperature pt. In addition, the candidate waveforms A and B differ from each other by the amount of overshoot with respect to the set temperature pt.

The three candidate waveforms C, D, and E are associated with the temperature range of 110°C or higher and less than 130°C. The candidate waveforms C, D, and E are different from each other when the temperature of the heat-treating plate 10 drops from the set temperature pt and returns to the set temperature pt. Further, the candidate waveforms C, D, and E are different from each other by the amount of overshoot with respect to the set temperature pt.

The three candidate waveforms F, G, and H are associated with the temperature range of 130°C or higher and less than 150°C. The candidate waveforms F, G, and H are different from each other in time for the temperature of the heat-treating plate 10 to return to the set temperature pt after the temperature of the set temperature pt drops. In addition, the excess amounts of the candidate waveforms F, G, and H with respect to the set temperature pt are different from each other.

In each of the candidate waveforms A to H, the temperature change amount (decreased amount) from the set temperature pt dropped immediately after the substrate W is placed on the heat treatment plate 10 is smaller as the corresponding temperature region is lower, and the corresponding temperature region is higher. the larger.

Furthermore, in the present embodiment, for each candidate waveform, the operation condition of the heater 11 for appropriately returning the temperature of the heat treatment plate 10 to the set temperature according to the candidate waveform is stored as the initial operation condition in the memory unit 51 in FIG. 8 . middle. That is, the storage unit 51 stores a plurality of initial operation conditions corresponding to the plurality of candidate waveforms, respectively. Thereby, in the initial stage of the heating process of the substrate W, the heater 11 is driven under the initial operating conditions corresponding to the candidate waveform selected as the reference waveform. Each initial operating condition can be obtained by simulation, experiment, or the like.

FIG. 10 is a diagram showing an example of a plurality of initial operation conditions corresponding to the plurality of candidate waveforms A to H of FIG. 9 , respectively. In this embodiment, each initial operating condition includes a PID control parameter for PID (proportional-integral-derivative) control of the heater 11 based on the detection signal of the temperature sensor 19 of FIG. 8 . In addition, each initial operating condition includes an upper limit parameter indicating an upper limit of the output of the heater 11 . In Fig. 10, the PID control parameter is referred to as "PID", and the upper limit parameter is referred to as "heater upper limit". The value of the upper limit parameter is represented by, for example, a ratio (%) to the upper limit of the output allowable by the rated output of the heater 11 .

As shown in FIG. 10 , the initial operating conditions corresponding to the candidate waveform A of FIG. 9 include the proportional parameter "0.4", the integral parameter "15", the differential parameter "3", and the upper limit parameter "80(%)". The initial operating conditions corresponding to the candidate waveform B in FIG. 9 include the proportional parameter "0.5", the integral parameter "15", the differential parameter "3", and the upper limit parameter "80(%)".

The initial operating conditions corresponding to the candidate waveform C in FIG. 9 include a proportional parameter "0.3", an integral parameter "15", a differential parameter "3", and an upper limit parameter "90(%)". The initial operating conditions corresponding to the candidate waveform D of FIG. 9 include the proportional parameter "0.5", the integral parameter "15", the differential parameter "3", and the upper limit parameter "90(%)". The initial operating conditions corresponding to the candidate waveform E in FIG. 9 include the proportional parameter "0.2", the integral parameter "15", the differential parameter "3", and the upper limit parameter "90(%)".

Furthermore, the initial operating conditions corresponding to the candidate waveform F of FIG. 9 include the proportional parameter "0.2", the integral parameter "15", the differential parameter "3", and the upper limit parameter "100(%)". The initial operating conditions corresponding to the candidate waveform G in FIG. 9 include the proportional parameter "0.5", the integral parameter "15", the differential parameter "3", and the upper limit parameter "100(%)". The initial operating conditions corresponding to the candidate waveform H of FIG. 9 include the proportional parameter "0.1", the integral parameter "15", the differential parameter "3", and the upper limit parameter "100(%)".

Here, the treatment process recipe to be set in the heat treatment apparatus 100 includes a set temperature and a heat treatment time. The setting screen displayed on the display part 62 of FIG. 8 when setting a process recipe is demonstrated.

11 and 12 are diagrams showing an example of the setting screen of the processing recipe recipe displayed on the display unit 62 of FIG. 8 . On the setting screen of the processing recipe recipe, a temperature input field 62a, a time input field 62b, and a waveform selection field 62c are displayed.

As shown in FIG. 11, when the temperature input field 62a, the time input field 62b and the waveform selection field 62c are blank, the user can use the operation part 61 of FIG. 8 to input the desired set temperature in the temperature input field 62a. Moreover, the user can input the desired heat treatment time in the time input field 62b using the operation part 61 of FIG. 8 . Thereby, the treatment recipe to be used in the heat treatment of the substrate W is set.

When the processing recipe is set, as shown in FIG. 12 , a plurality of candidate waveforms (in this example, candidate waveforms A and B) corresponding to the temperature region to which the set temperature input by the user belongs are displayed in the waveform selection column 62c. Therefore, the user can use the operation unit 61 of FIG. 8 to select one of the plurality of candidate waveforms as the reference waveform. At this time, the initial operating conditions corresponding to the selected candidate waveform (reference waveform) are read from the memory unit 51 . Thereby, the reference waveform and initial operating conditions to be used in the heat treatment of the substrate W are set.

According to the example of the setting screen of FIGS. 11 and 12 described above, by inputting the set temperature in the temperature input field 62a, a plurality of candidate waveforms corresponding to the set temperature are displayed in the waveform selection field 62c. Thereby, the user can easily grasp a plurality of selectable candidate waveforms corresponding to the set temperature. In addition, the user can easily select one candidate waveform from among a plurality of selectable candidate waveforms. Therefore, inappropriate candidate waveforms are prevented from being determined as reference waveforms.

However, depending on the temperature of the space in which the heat treatment apparatus 100 is installed, the set initial operating conditions may not be appropriate. Furthermore, it is assumed that a plurality of substrates W are subjected to a common heat treatment using a plurality of heat treatment apparatuses 100 as a substrate treatment apparatus described later is provided with the heat treatment apparatus 100 of FIG. 8 . In this case, there are usually individual differences among the plurality of heat treatment apparatuses 100 . Therefore, if common initial operating conditions are set for the plurality of heat treatment apparatuses 100 , there is a possibility that ideal temperature adjustment cannot be performed in each of the heat treatment apparatuses 100 .

Therefore, in the heat treatment apparatus 100 of the present embodiment, for each heat treatment of the substrate W, the initial operating conditions are changed so that the temperature change of the heat treatment plate 10 within a fixed period from the time when the substrate W is placed is close to the set reference waveform. .

It is assumed that the set temperature is set to 90° C. and the candidate waveform B of FIG. 10 is set as the reference waveform. The amount of overshoot generated by the candidate waveform B is relatively small. For example, when heating the first substrate W shown in FIG. 2 at a set temperature of 90° C. and using the candidate waveform B as the reference waveform, the heat treatment apparatus 100 operates according to the initial operating conditions of FIG. 10 corresponding to the candidate waveform B. In this case, if a large overshoot occurs in the temperature change of the heat treatment plate 10, the initial operating conditions corresponding to the candidate waveform B are changed so that the overshoot amount becomes smaller. Thereafter, when the second substrate W is subjected to heat treatment at the set temperature of 90° C. and the candidate waveform B as the reference waveform, the heat treatment apparatus 100 operates according to the initial operating conditions after the change. Thereby, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is closer to the reference waveform than that during the heat treatment of the first substrate W. Therefore, in the heat treatment of the second substrate W, after the substrate W is placed on the heat treatment plate 10, the temperature of the heat treatment plate 10 is more appropriately restored to the set temperature than during the heat treatment of the first substrate W.

In addition, when the second substrate W is heat-treated at the set temperature of 90° C. and the candidate waveform B is used as the reference waveform, if the temperature change of the heat-treated plate 10 produces a moderate overshoot, the overshoot amount is further reduced. The method changes the initial operating conditions corresponding to the candidate waveform B again. Thereafter, when the third substrate W is subjected to heat treatment at the set temperature of 90° C. and the candidate waveform B is used as the reference waveform, the heat treatment apparatus 100 operates in accordance with the initial operating conditions after the change. Thereby, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is closer to the reference waveform than that during the heat treatment of the second substrate W. Therefore, in the heat treatment of the third substrate W, after the substrate W is placed on the heat treatment plate 10, the temperature of the heat treatment plate 10 is more appropriately restored to the set temperature than during the heat treatment of the second substrate W.

In the example of FIG. 2 , the initial operating conditions corresponding to the set temperatures of 115° C. and 140° C. are also changed every time the heat treatment of the substrate W is performed, as in the case of the case of the set temperature of 90° C. Initial operating conditions corresponding to temperature changes.

As described above, the initial operating conditions are changed every time the substrate W is subjected to the heat treatment according to the real-time temperature change of the heat treatment plate 10 . In this case, as the heat treatment of the substrate W is repeatedly performed, the accuracy of the heat treatment is improved. In addition, according to the above-mentioned control, when the plurality of heat treatment apparatuses 100 are used for the common heat treatment of the plurality of substrates W, variation in the heat treatment of the substrate W among the plurality of heat treatment apparatuses 100 is suppressed. The change of the initial operating conditions is performed by, for example, the same method as the example of changing the initial operating conditions of the first embodiment described with reference to FIG. 4 .

(3) Control device 50 As shown in FIG. 8 , the control device 50 includes a memory unit 51 , a heat generation control unit 52 , a cooling control unit 53 , a lift control unit 54 , a temperature acquisition unit 55 , a condition changing unit 56 , a determination unit 57 , and a display control unit 58 as functional units . The control device 50 includes a CPU (Central Processing Unit), a RAM (Random Access Memory), and a ROM (Read Only Memory). Each of the above functional units is realized by causing the CPU to execute the computer program stored in the ROM or other storage medium. Furthermore, a part or all of the functional components of the control device 50 may be realized by hardware such as electronic circuits.

In the control device 50 of the second embodiment, the storage unit 51 stores a plurality of candidate waveforms, and also stores a plurality of initial operation conditions corresponding to the plurality of candidate waveforms, respectively. Moreover, the storage part 51 memorize|stores the processing recipe, the reference waveform, and the initial operation condition set by the user as information to be used in the next heating process, for example. The heat generation control unit 52 controls the heat generation drive unit based on the detection signal output from the temperature sensor 19 so as to operate according to the initial operation condition corresponding to the set reference waveform at the initial stage of the heat treatment of the substrate W by the heat treatment plate 10 13. The cooling control unit 53 controls the cooling drive unit 22 to cool the active cooling plate 20 during the power-on period of the heat treatment apparatus 100 . The lift control unit 54 controls the lift device 40 so that the passive cooling plate 30 contacts the heat treatment plate 10 when the temperature of the heat treatment plate 10 is lowered.

Moreover, in the control apparatus 50 of 2nd Embodiment, the temperature acquisition part 55 acquires the temperature of the heat processing board 10 based on the detection signal output from the temperature sensor 19. More specifically, the temperature acquisition unit 55 acquires the change in temperature by sampling the detection signal output from the temperature sensor 19 at a fixed period. The condition changing unit 56 changes the initial operation condition corresponding to the one candidate waveform determined as the reference waveform so that the temperature change acquired by the temperature acquiring unit 55 is close to the set reference waveform.

Furthermore, in the control apparatus 50 of 2nd Embodiment, the display control part 58 displays the setting screen of a process recipe recipe and a reference waveform on the display part 62. The determination part 57 determines the value of the temperature input by the user on the setting screen as the setting temperature when setting the processing recipe. At this time, the display control unit 58 selectively displays a plurality of candidate waveforms corresponding to the temperature region to which the determined set temperature belongs on the setting screen. Moreover, the determination part 57 determines the candidate waveform selected by the user operating the operation part 61 on the setting screen as a reference waveform.

In addition, the heat treatment apparatus 100 may be configured so that the memory unit 51 can memorize the new candidate waveform based on the operation of the operation unit 61 by the user. In addition, the heat treatment apparatus 100 may be configured so that the memory unit 51 can memorize the new initial operation conditions based on the operation of the operation unit 61 by the user.

As described above, each functional unit of the control device 50 of FIG. 8 operates. Thereby, in the control apparatus 50 of 2nd Embodiment, the temperature adjustment process of 1st Embodiment demonstrated using FIG. 5 and FIG. 6 is also performed.

(4) Effects of the second embodiment In the heat treatment apparatus 100 described above, a plurality of candidate waveforms that can be used as reference waveforms are stored in the memory unit 51 . In addition, a plurality of initial operation conditions corresponding to the plurality of candidate waveforms, respectively, are stored in the memory unit 51 . One candidate waveform is determined as a reference waveform from among the plurality of candidate waveforms stored in the storage unit 51 .

After that, the substrate W is placed on the heat treatment plate 10, and the placed substrate W is subjected to heat treatment. In the initial stage of the heat treatment, the heater 11 operates according to the operation condition corresponding to one candidate waveform determined as the reference waveform for a fixed period from the time when the substrate W is placed on the heat treatment plate 10 . In addition, the temperature change of the heat-treated plate 10 is detected. The initial operating condition corresponding to one of the candidate waveforms stored in the memory unit 51 is changed so that the detected temperature change is close to the reference waveform.

Thereby, in the case of sequentially performing heat treatment on a plurality of substrates W, at the initial stage of each heat treatment, the heater 11 operates according to the initial operation condition changed in the previous heat treatment. Thereby, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is closer to the reference waveform than that of the previous heat treatment.

In this way, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is gradually corrected to an appropriate temperature change. Therefore, the temperature of the heat treatment plate 10 immediately after the substrate W is placed is quickly adjusted to an appropriate temperature for the heat treatment of the substrate W.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus 100 changes, the initial operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate W is appropriately performed without being affected by temperature changes around the heat treatment apparatus 100 .

Furthermore, according to the above-described configuration, one candidate waveform among the plurality of candidate waveforms is determined as a reference waveform indicating an appropriate temperature change of the heat-treating plate 10 immediately after the substrate W is placed on the heat-treating plate 10 . As a result of these, the heat treatment of the substrate W can be performed appropriately and accurately.

(5) A substrate processing apparatus including the thermal processing apparatus 100 shown in FIG. 8 The heat treatment apparatus 100 of FIG. 8 according to the second embodiment is used in the substrate treatment apparatus 400 of FIG. 7 in the same manner as the heat treatment apparatus 100 of FIG. 1 according to the first embodiment. In this case, a plurality of heat treatment apparatuses 100 of FIG. 8 are installed in the heat treatment part 440 of FIG. 7 . In each heat treatment apparatus 100, a temperature adjustment process is performed. Thereby, it is possible to perform a high-accuracy and appropriate heat treatment on each of the plurality of substrates W. As shown in FIG. In addition, even when a plurality of substrates W are subjected to a common heat treatment by a plurality of heat treatment apparatuses 100 having individual differences from each other, the plurality of substrates W can be heat treated with high precision and uniformity.

[3] The third embodiment Hereinafter, the heat treatment system and the heat treatment method of the third embodiment will be described with reference to the drawings.

Fig. 13 is a block diagram showing the configuration of the heat treatment system of the third embodiment. As shown in FIG. 13 , the heat treatment system 900 includes one or a plurality of (three in this example) substrate processing apparatuses 400 , line width measurement apparatuses 700 , and management apparatuses 800 . Three substrate processing apparatuses 400 and line width measurement apparatuses 700 are provided. And the management device 800 can be connected to the network 990 in communication with each other.

Each substrate processing apparatus 400 of FIG. 13 has basically the same structure as that of the substrate processing apparatus 400 of FIG. 7 . In addition, in the substrate processing apparatus 400 of FIG. 13 , a plurality of the thermal processing apparatuses 100 of FIG. 8 are installed in the thermal processing unit 440 . The line width measuring device 700 measures the line widths of the resist films formed on the plurality of substrates W after being processed by the plurality of substrate processing devices 400 , and outputs the measurement results to the management device 800 .

The management device 800 is, for example, a personal computer including a CPU and a memory, or a microcomputer. The management device 800 includes a storage unit 801 and a waveform update unit 802 as functional units. These functional parts are realized by causing the CPU of the management device 800 to execute the computer program stored in the memory. Furthermore, a part or all of the above-mentioned configuration may be realized by hardware such as an electronic circuit.

The storage unit 801 stores a table (hereinafter referred to as a line width waveform table) showing a predetermined correspondence relationship between the line width measurement result obtained by the line width measurement device 700 and a plurality of candidate waveforms. FIG. 14 is a diagram showing an example of the line width waveform table memorized in the storage unit 801 of FIG. 13 .

In the line width waveform table of FIG. 14 , the correspondence relationship between the measurement result of the line width and the candidate waveform is specified for each temperature region of FIG. 9 predetermined for the set temperature. Here, in the example of FIG. 14, the difference of the line width represents the difference of the actual size of the line width with respect to the design size. In addition, the first threshold value is a value smaller than the second threshold value.

According to the line width waveform table of FIG. 14 , in the temperature range of 80° C. or higher and less than 110° C., the measurement result of the difference of the line width being smaller than the first threshold value is associated with the candidate waveform B of FIG. 9 . In addition, the measurement result in which the difference in line width is equal to or larger than the first threshold value and smaller than the second threshold value is associated with the candidate waveform B in FIG. 9 . Furthermore, the measurement result in which the line width difference is equal to or greater than the second threshold value is associated with the candidate waveform A in FIG. 9 .

On the other hand, in the temperature range of 110° C. or higher and less than 130° C., the measurement result in which the difference in line width is smaller than the first threshold value is associated with the candidate waveform E of FIG. 9 . In addition, the measurement result in which the difference in line width is equal to or larger than the first threshold value and smaller than the second threshold value is associated with the candidate waveform D in FIG. 9 . Furthermore, the measurement result in which the line width difference is equal to or greater than the second threshold value is associated with the candidate waveform C in FIG. 9 .

On the other hand, in the temperature range of 130° C. or higher and less than 150° C., the measurement result in which the difference in line width is smaller than the first threshold value is associated with the candidate waveform H of FIG. 9 . In addition, the measurement result in which the difference in line width is equal to or larger than the first threshold value and smaller than the second threshold value is associated with the candidate waveform G in FIG. 9 . Furthermore, the measurement result in which the line width difference is equal to or greater than the second threshold value is associated with the candidate waveform F in FIG. 9 .

The waveform update unit 802 receives the measurement result output from the line width measurement apparatus 700 for the substrate W processed by the one substrate processing apparatus 400 . In this case, the waveform update unit 802 determines the candidate waveforms corresponding to the received measurement results for each of the plurality of temperature regions based on the line width waveform table.

Next, the waveform update unit 802 transmits an instruction to set the candidate waveform determined for each predetermined temperature region as the reference waveform to the plurality of thermal processing apparatuses 100 included in one substrate processing apparatus 400 . In this way, in a plurality of thermal processing apparatuses 100 of one substrate processing apparatus 400, when the set reference waveform is different from the instructed candidate waveform, the instructed candidate waveform is re-determined as the reference waveform.

For example, it is assumed that in one heat treatment apparatus 100 of one substrate processing apparatus 400 , a heat treatment at a set temperature of 80° C. is performed using the candidate waveform B of FIG. 9 as a reference waveform. Here, it is assumed that the line width of the resist film is measured by the line width measuring apparatus 700 on the substrate W processed by the one substrate processing apparatus 400, and the difference of the line width is equal to or greater than the second threshold value. In this case, according to the line width waveform table of FIG. 14 , the candidate waveform corresponding to the heat treatment at the set temperature of 80° C. is the candidate waveform A. FIG. The candidate waveform A is different from the set reference waveform, that is, the candidate waveform B. Thereby, the reference waveform in one heat treatment apparatus 100 is updated from the candidate waveform B to the candidate waveform A.

FIG. 15 is a flowchart showing an example of a series of processing performed by the waveform update unit 802 of FIG. 13 . By turning on the power of the management device 800, a series of processing of FIG. 15 is started.

As shown in FIG. 15 , the waveform update unit 802 determines whether or not the line width measurement has been performed on the substrate W processed by the one substrate processing apparatus 400 based on the signal supplied from the line width measurement apparatus 700 (step S31 ).

When the line width measurement is not performed, the waveform update unit 802 repeatedly performs the process of step S31. On the other hand, if the line width measurement has been performed, the waveform update unit 802 calculates the difference in line width based on the measurement result given from the line width measurement device 700 (step S32).

Next, the waveform update unit 802 determines an appropriate candidate waveform for each predetermined temperature region based on the difference between the calculated line width and the line width waveform table stored in the memory unit 801 (step S33).

Next, the waveform update unit 802 transmits the determination result to one substrate processing apparatus 400 (step S34). Moreover, the waveform update part 802 gives the instruction|indication that the reference waveform should be updated to one board|substrate processing apparatus 400 based on a determination result (step S35).

After that, the waveform update unit 802 determines whether or not the line width measurement has been performed on the substrate W processed by the other substrate processing apparatus 400 based on the signal supplied from the line width measurement apparatus 700 (step S36 ).

When the line width measurement is not performed, the waveform update unit 802 repeatedly performs the process of step S36. On the other hand, if the line width measurement has been performed, the waveform update unit 802 sets the other substrate processing apparatus 400 as one substrate processing apparatus 400 (step S37 ), and proceeds to the process of the above-described step S32 .

In the thermal processing system 900 of the present embodiment, the reference waveform set in the plurality of thermal processing apparatuses 100 of the substrate processing apparatus 400 is updated to be more appropriate based on the measurement result of the line width of the substrate W after processing by the substrate processing apparatus 400 the waveform. Thereby, the heat treatment of the substrate W can be performed more appropriately and with high precision.

[4] Other Embodiments (1) In the first to third embodiments, the heat treatment apparatus 100 having the configuration of heating the heat treatment plate 10 and the configuration of cooling the heat treatment plate 10 has been described, but the present invention is not limited to this. The heat treatment apparatus 100 may not have the configuration of cooling the heat treatment plate 10 (in the above example, the active cooling plate 20, the passive cooling plate 30, and the lifting device 40). (2) In the first to third embodiments, the example in which the heat treatment plate 10 is a metal heat transfer plate has been described, but the heat treatment plate 10 may be a ceramic heat transfer plate. In this case, aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), and the like are exemplified as ceramics forming the heat transfer plate. (3) In the heat treatment apparatus 100 of the first embodiment, the upper surface of the heat treatment plate 10 may be divided into a plurality of regions, and the portion may be heated corresponding to each region. That is, the heater 11 and the heat generating drive unit 13 may be provided for each of the plurality of regions of the heat treatment plate 10 . Alternatively, the heater 11 may be provided in each of the plurality of regions of the heat treatment plate 10 , and the heat generating drive unit 13 may independently drive the plurality of heaters 11 .

In this case, the initial operating conditions may also be memorized in the memory portion 51 for each of the plurality of regions of the heat treatment plate 10 . Also, the condition changing unit 56 may change a plurality of parameters of the initial operating conditions corresponding to at least a part of the regions, for example, so that the temperature changes of the plurality of regions of the heat treatment plate 10 during the heat treatment approach the reference waveform. According to such a configuration, detailed temperature adjustment can be performed on a plurality of regions on the upper surface of the heat-treated plate 10 . Furthermore, in this case, the temperature change obtained during the heat treatment of the substrate W for one of the plurality of regions may be used as the reference waveform.

(4) In the first to third embodiments, the heat treatment apparatus 100 heats the substrate W, but the heat treatment apparatus 100 may be configured to perform only the cooling treatment on the substrate W. In this case, in the heat treatment plate 10 of FIG. 1, for example, instead of the heater 11, a cooling mechanism 21 for reducing the temperature of the upper surface of the heat treatment plate 10 is provided.

When cooling the substrate W, the heat treatment plate 10 is kept at a lower set temperature than the substrate W in the initial state. Therefore, when the substrate W is placed on the heat treatment plate 10 at the start of the cooling process, the temperature of the heat treatment plate 10 receives the heat of the substrate W and rises from the set temperature.

When the cooling mechanism 21 includes a Peltier element, the temperature on the heat treatment plate 10 can be adjusted by controlling the driving state of the Peltier element in the same manner as in the above-described embodiment. Therefore, in this example, the initial operating conditions are set so that the temperature of the heat treatment plate 10 is rapidly lowered to the set temperature.

In this case, the condition changing unit 56 approaches the set time of the reference waveform corresponding to the arrival time of the actual measured waveform from the time when the substrate W is placed on the heat treatment plate 10 until the temperature of the heat treatment plate 10 reaches the set temperature. In this way, the initial operating conditions are changed. In addition, the condition changing unit 56 changes the initial operating conditions so that the temperature value of the actually measured waveform at a specific point in the cooling process is close to the temperature value of the reference waveform. Furthermore, the condition changing unit 56 changes the initial operating conditions so that the insufficient amount of the temperature change of the heat treatment plate 10 with respect to the set temperature is reduced.

(5) In the first embodiment, the value of the proportional parameter is changed among the values of the PID control parameters for the heater 11 in order to make the measured waveform approach the reference waveform, but the present invention is not limited to this. In order to make the measured waveform close to the reference waveform, the value of the integral parameter and the value of the differential parameter can be changed among the values of the PID control parameters.

(6) In the heat treatment apparatuses 100 of the second and third embodiments, the upper surface of the heat treatment plate 10 may be divided into a plurality of regions, and the portions may be heated corresponding to the regions. That is, the heater 11 and the heat generating drive part 13 may be provided in each of the plurality of regions of the heat treatment plate 10 . Alternatively, the heater 11 may be provided in each of a plurality of regions of the heat treatment plate 10 , and the heat generating drive unit 13 may independently drive the plurality of heaters 11 .

In this case, the reference waveform to be used for the heat treatment may also be determined for each of the plurality of regions of the heat treatment plate 10 . In addition, the condition changing unit 56 may change a plurality of initial operating conditions corresponding to at least a part of the regions, for example, so that the temperature changes in the plurality of regions of the heat-treating plate 10 during the heat treatment approach the reference waveform determined for each region. parameter. According to this configuration, more detailed temperature adjustment can be performed on a plurality of regions on the upper surface of the heat-treated plate 10 .

(7) In the second and third embodiments, the value of the proportional parameter among the values of the PID control parameters for the heater 11 is changed in order to make the measured waveform approach the reference waveform, but the present invention is not limited to this. In order to make the measured waveform close to the reference waveform, the value of the integral parameter and the value of the differential parameter can be changed among the values of the PID control parameters.

(8) In the substrate processing apparatus 400 of FIG. 7 including the thermal processing apparatus 100 of the second embodiment, the control unit 410 may have the condition changing unit 56 and the determination unit 57 of FIG. Candidate waveforms and a plurality of initial operating conditions shown in FIG. 10 .

In this case, the determination unit 57 of the control unit 410 may also determine the reference waveform to be set for each of the plurality of heat treatment apparatuses 100 based on the operation of an operation unit (not shown) provided in the substrate processing apparatus 400 . Furthermore, the determination unit 57 of the control unit 410 may give each heat treatment apparatus 100 an instruction to operate under the initial operating conditions corresponding to the candidate waveform selected as the reference waveform.

In addition, the condition changing unit 56 of the control unit 410 may change the initial stage corresponding to the reference waveform stored in the control unit 410 so that the temperature changes obtained by the temperature obtaining units 55 of the plurality of heat treatment apparatuses 100 are close to the set reference waveform. Action condition.

(9) In the substrate processing apparatus 400 of FIG. 7 including the thermal processing apparatus 100 of the second embodiment, the control devices 50 or the control units 410 of the plurality of thermal processing apparatuses 100 may also have the memory unit 801 and the waveform update unit 802 of FIG. 13 as functional department. In this case, for example, based on the measurement results of the line width measurement device 700 provided outside the substrate processing apparatus 400, the reference waveforms used for the heat treatment in the plurality of heat treatment apparatuses 100 can be updated.

(10) In the heat treatment system 900 of the third embodiment, the management device 800 may further include the condition changing unit 56 and the determination unit 57 shown in FIG. 8 as functional units, and the memory unit 801 may store a plurality of candidate waveforms and Figure 10 shows a plurality of initial operating conditions.

In this case, the determination unit 57 of the management apparatus 800 may also determine, based on the operation of an operation unit (not shown) provided in the management apparatus 800, that the setting should be performed for each of the plurality of heat treatment apparatuses 100 of the plurality of substrate treatment apparatuses 400, respectively. the reference waveform. Furthermore, the determination part 57 of the management apparatus 800 may give each heat processing apparatus 100 an instruction to operate under the initial operating conditions corresponding to the candidate waveform selected as the reference waveform.

In addition, the condition changing unit 56 of the management device 800 may change the initial operation corresponding to the reference waveform stored in the memory unit 801 so that the temperature changes obtained by the temperature obtaining units 55 of the plurality of heat treatment devices 100 are close to the set reference waveform. condition.

(11) In the example of FIG. 10, the plurality of initial operation conditions corresponding to the plurality of candidate waveforms are different from each other, but some or all of the plurality of initial operation conditions may be common.

(12) In the heat treatment system 900 of the third embodiment, the line width measuring device 700 for measuring the line width of the resist film is used as a configuration for acquiring process information on the substrate W to be heat treated in each heat treatment device 100 , but the present invention is not limited to this.

As a configuration for acquiring processing information related to the substrate W to be heat-treated, a device for measuring the thickness of the resist film formed on the substrate W may be used instead of the line width measuring device 700, or a device for counting the thickness of the resist film formed on the substrate W may be used. the number of defects in the device. In these cases, a table representing the predetermined relationship between the thickness of the resist film or the number of defects and the plurality of candidate waveforms is stored in the memory unit 801 . Thereby, the reference waveform set in the heat treatment apparatus 100 can be updated to a more appropriate waveform based on the thickness of the resist film or the number of defects and the table stored in the memory section 801 .

[5] Correspondence between the constituent elements of the claim and the elements of the embodiment Hereinafter, an example of the correspondence between each constituent element of the claim and each element of the embodiment will be described. In the first embodiment, the heat treatment apparatus 100 is an example of a heat treatment apparatus, the heat treatment plate 10 is an example of a plate member, the heater 11 and the heat generating drive unit 13 are examples of a heat treatment section, the initial operating conditions are examples of operating conditions, and the memory section 51 As an example of a memory unit, the heat generation control unit 52 is an example of an operation control unit, the temperature sensor 19 is an example of a temperature detector, and the temperature acquisition unit 55 and the condition changing unit 56 are examples of a condition changing unit.

In the second and third embodiments, the heat treatment apparatus 100 is an example of a heat treatment apparatus, the heat treatment plate 10 is an example of a plate member, the heater 11 and the heat generating drive unit 13 are an example of a heat treatment section, and the initial operating conditions are examples of operating conditions. The memory unit 51 is an example of a first memory unit, the temperature sensor 19 is an example of a temperature detector, and the determination unit 57 is an example of a determination unit.

In the second and third embodiments, the heat generation control unit 52 is an example of an operation control unit, the temperature acquisition unit 55 and the condition changing unit 56 are an example of a condition changing unit, the operation unit 61 is an example of an operation unit, and the display unit 62 As an example of a display unit, the display control unit 58 is an example of a display control unit.

In the second and third embodiments, the line width measuring device 700 is an example of the information acquisition unit, the storage unit 801 is an example of the second storage unit, the waveform update unit 802 is an example of a waveform update unit, and the heat treatment system 900 is a heat treatment system System example.

As each constituent element of the claim, other various elements having the structure or function described in the claim may also be used.

10: Heat treatment plate 11: Heater 13: Heating drive part 19: Temperature sensor 20: Active Cooling Plate 21: Cooling mechanism 22: Cooling drive part 30: Passive Cooling Plate 40: Lifting device 41: Lifting drive part 50: Control device 51: Memory Department 52: Heat Control Department 53: Cooling Control Department 54: Lifting control part 55: Temperature acquisition section 56: Condition Change Department 57: Decision Department 61: Operation Department 62: Display part 62a: Temperature input field 62b: Time input field 62c: Waveform selection bar 100: Heat treatment device 400: Substrate processing device 410: Control Department 420: Coating Processing Department 430: Development processing department 440: Heat Treatment Department 450: Substrate transfer device 500: Exposure device 700: Line width measurement device 800: Management device 801: Memory Department 802: Waveform Update Section 900: Heat Treatment System 990: Internet W: substrate

FIG. 1 is a schematic side view showing the configuration of the heat treatment apparatus according to the first embodiment. FIG. 2 is a diagram showing an example of temperature change of a heat-treated plate when a plurality of substrates are sequentially heat-treated. FIG. 3 is a diagram showing an example of initial operating conditions set for each of a plurality of set temperatures. FIG. 4 is a diagram for explaining a specific modification example of the initial operating conditions. FIG. 5 is a flowchart showing an example of temperature adjustment processing. FIG. 6 is a flowchart showing an example of temperature adjustment processing. FIG. 7 is a schematic block diagram showing an example of a substrate processing apparatus including the thermal processing apparatus of FIG. 1 . Fig. 8 is a schematic side view showing the configuration of the heat treatment apparatus according to the second embodiment. FIG. 9 is a diagram showing an example of a plurality of candidate waveforms memorized in the memory unit of FIG. 8 . FIG. 10 is a diagram showing an example of a plurality of initial operating conditions corresponding to the plurality of candidate waveforms in FIG. 9, respectively. FIG. 11 is a diagram showing an example of a setting screen of a processing recipe recipe displayed on the display unit of FIG. 8 . FIG. 12 is a diagram showing an example of a setting screen of the processing recipe recipe displayed on the display unit of FIG. 8 . Fig. 13 is a block diagram showing the configuration of the heat treatment system of the third embodiment. FIG. 14 is a diagram showing an example of a line width waveform table memorized in the memory portion of FIG. 13 . FIG. 15 is a flowchart showing an example of a series of processing performed by the waveform update unit of FIG. 13 .

10: Heat treatment plate

11: Heater

13: Heating drive part

19: Temperature sensor

20: Active Cooling Plate

21: Cooling mechanism

22: Cooling drive part

30: Passive Cooling Plate

40: Lifting device

41: Lifting drive part

50: Control device

51: Memory Department

52: Heat Control Department

53: Cooling Control Department

54: Lifting control part

55: Temperature acquisition section

56: Condition Change Department

100: Heat treatment device

Claims (23)

A heat treatment apparatus for heat-treating a substrate, comprising: a plate member on which a substrate is placed; a heat treatment unit for heat-treating a substrate placed on the plate member through the plate member; and a memory unit for storing a memory an operation condition of the heat treatment unit for a fixed period from the time when the substrate is placed on the plate member; an operation control unit that causes the heat treatment unit to operate according to the operation condition memorized in the memory unit; a temperature detector that detects the plate member and a condition changing unit that changes the operating conditions memorized in the memory unit so that the temperature change detected by the temperature detector when the heat treatment unit operates in accordance with the operating conditions is close to a predetermined reference waveform; and the The operating condition includes the value of one or a plurality of control parameters; the condition changing unit changes the value of at least one of the one or more control parameters stored in the memory unit so that the detected temperature change is close to the reference waveform The above-mentioned heat treatment part is configured to be able to perform PID control; the above-mentioned one or a plurality of control parameters include at least one of the proportional parameter, the integral parameter and the differential parameter of the above-mentioned PID control, and the above-mentioned PID control is used to automatically place the substrate on the above-mentioned From the time point on the plate member, the temperature of the plate member is returned to the processing temperature for processing the substrate. A heat treatment apparatus for heat-treating a substrate, comprising: a plate member on which a substrate is placed; a heat treatment unit for heat-treating a substrate placed on the plate member through the plate member; and a memory unit for storing a memory an operation condition of the heat treatment unit for a fixed period from the time when the substrate is placed on the plate member; an operation control unit that causes the heat treatment unit to operate according to the operation condition memorized in the memory unit; a temperature detector that detects the plate member and a condition changing unit that changes the operating conditions memorized in the memory unit so that the temperature change detected by the temperature detector when the heat treatment unit operates in accordance with the operating conditions is close to a predetermined reference waveform; and the The operating condition includes the value of one or a plurality of control parameters; the condition changing unit changes the value of at least one of the one or more control parameters stored in the memory unit so that the detected temperature change is close to the reference waveform ; The one or more control parameters include the upper limit of the output of the heat treatment section. A heat treatment apparatus for heat-treating a substrate, comprising: a plate member on which a substrate is placed; a heat treatment unit for heat-treating a substrate placed on the plate member through the plate member; and a memory unit for storing a memory The operating conditions of the above-mentioned heat treatment section within a fixed period from the time when the substrate is placed on the above-mentioned plate member; an operation control part that makes the heat treatment part operate according to the operation conditions memorized in the memory part; a temperature detector that detects the temperature of the plate member; and a condition change part that makes the heat treatment part operate according to the operation conditions The operating conditions memorized in the memory unit are changed so that the temperature change detected by the temperature detector is close to a predetermined reference waveform; and the condition changing unit changes the operating conditions in such a way that the substrate is placed on the The arrival time from the time point on the plate member to the time point when the temperature detected by the temperature detector returns to the processing temperature for processing the substrate is close to the preset set time. A heat treatment apparatus for heat-treating a substrate, comprising: a plate member on which a substrate is placed; a heat treatment unit for heat-treating a substrate placed on the plate member through the plate member; and a memory unit for storing a memory an operation condition of the heat treatment unit for a fixed period from the time when the substrate is placed on the plate member; an operation control unit that causes the heat treatment unit to operate according to the operation condition memorized in the memory unit; a temperature detector that detects the plate member and a condition changing unit that changes the operating conditions memorized in the memory unit so that the temperature change detected by the temperature detector when the heat treatment unit operates in accordance with the operating conditions is close to a predetermined reference waveform; and The condition changing unit changes the operating conditions so that the value of the temperature detected by the temperature detector at a specific time point within the fixed period from the time when the substrate is placed on the plate member is close to the above The value of the temperature of the part of the reference waveform corresponding to the above-mentioned specific time point. A heat treatment apparatus for heat-treating a substrate, comprising: a plate member on which a substrate is placed; a heat treatment unit for heat-treating a substrate placed on the plate member through the plate member; and a memory unit for storing a memory an operation condition of the heat treatment unit for a fixed period from the time when the substrate is placed on the plate member; an operation control unit that causes the heat treatment unit to operate according to the operation condition memorized in the memory unit; a temperature detector that detects the plate member and a condition changing unit that changes the operating conditions memorized in the memory unit so that the temperature change detected by the temperature detector when the heat treatment unit operates in accordance with the operating conditions is close to a predetermined reference waveform; and the The condition changing unit changes the operating conditions so as to reduce the excess or deficiency with respect to the set temperature for heat-treating the substrate caused by the waveform of the detected temperature. The heat treatment device according to any one of claims 3 to 5, wherein the above-mentioned operating conditions include the value of one or more control parameters, The condition changing unit changes the value of at least one of the one or a plurality of control parameters stored in the memory unit so that the detected temperature change is close to the reference waveform. A heat treatment apparatus for heat-treating a substrate, comprising: a plate member on which a substrate is placed; a heat treatment unit for heat-treating a substrate placed on the plate member through the plate member; and a first memory unit for memorizing a plurality of candidate waveforms representing virtual temperature changes of the plate member for a fixed period from the time when the substrate is placed on the plate member, and memorizing a plurality of operation conditions of the heat treatment section corresponding to the plurality of candidate waveforms respectively; a temperature detector for detecting the temperature of the plate member; a determination unit for determining one candidate waveform as a reference waveform from among a plurality of candidate waveforms memorized in the first memory unit; an operation control unit for causing the heat treatment unit to follow the above-mentioned Among the plurality of operation conditions stored in the first storage unit, an operation condition corresponding to the one candidate waveform determined as the reference waveform operates; and a condition changing unit for causing the heat treatment unit to operate according to the operation condition corresponding to the one candidate waveform During operation, the operation condition corresponding to the one candidate waveform stored in the first memory unit is changed so that the temperature change detected by the temperature detector approaches the reference waveform. The heat treatment apparatus according to claim 7, further comprising an operation unit, and the operation unit is operated by the user to select one of the plurality of candidate waveforms stored in the first storage unit a candidate waveform; the determination unit determines one candidate waveform selected from the plurality of candidate waveforms stored in the first memory unit by the operation unit as the reference waveform in response to the user's operation on the operation unit. The thermal processing apparatus according to claim 8, further comprising a display control unit, and the display control unit causes the display unit to selectively display at least a part of the plurality of candidate waveforms. The heat treatment apparatus according to claim 9, wherein the plurality of candidate waveforms stored in the first memory section includes a plurality of candidate waveform groups corresponding to the plurality of temperature regions, and the determination section is configured to be able to set the waveforms for heat treatment of the substrate. The temperature is determined as a set temperature, and when the set temperature has been determined by the determination part, the display control part causes the display part to selectively display a plurality of candidate waveform groups corresponding to the temperature region to which the determined processing temperature belongs alternate waveforms. The heat treatment apparatus according to any one of claims 7 to 10, wherein each of the plurality of operating conditions memorized in the first memory unit includes the value of one or a plurality of control parameters, and the condition changing unit causes the detected The value of at least one of the operating conditions or at least one of the plurality of control parameters stored in the first memory unit corresponding to the one candidate waveform is changed so that the temperature change approaches the reference waveform. A heat treatment system having: The heat treatment apparatus according to claim 7; an information acquisition unit that acquires processing information related to a substrate that has been heat-treated by the heat treatment apparatus; a second memory unit that memorizes the predetermined relationship between the processing information and the plurality of candidate waveforms a corresponding relationship; and a waveform update unit for making a candidate waveform corresponding to the processing information acquired by the information acquisition unit based on the processing information acquired by the information acquisition unit and the corresponding relationship stored in the second memory unit The reference waveform is updated so that it becomes the reference waveform. A heat treatment method for heat treating a substrate, comprising the steps of: placing a substrate on a plate member; heat treating the placed substrate through the plate member by a heat treatment part; operating conditions of the heat treatment part for a fixed period of time from the time point on the plate member; causing the heat treatment part to operate according to the operation conditions memorized in the memory part; detecting the temperature of the plate member by a temperature detector; and making the heat treatment part operate When operating according to the above-mentioned operating conditions, the operating conditions stored in the memory section are changed in such a way that the temperature change detected by the above-mentioned temperature detector approaches a predetermined reference waveform; and the above-mentioned operating conditions include the value of one or more control parameters; The step of operating conditions includes: changing the value of at least one of the one or a plurality of control parameters stored in the memory unit so that the detected temperature change is close to the reference waveform; The heat treatment part is configured to be capable of PID control; the one or more control parameters include at least one of proportional parameters, integral parameters and differential parameters of the PID control, and the PID control is used to automatically place the substrate on the plate From the time point on the member, the temperature of the above-mentioned plate member is returned to the processing temperature for processing the substrate. A heat treatment method for heat treating a substrate, comprising the steps of: placing a substrate on a plate member; heat treating the placed substrate through the plate member by a heat treatment part; operating conditions of the heat treatment part for a fixed period of time from the time point on the plate member; causing the heat treatment part to operate according to the operation conditions memorized in the memory part; detecting the temperature of the plate member by a temperature detector; and making the heat treatment part operate When operating according to the above-mentioned operating conditions, the operating conditions stored in the memory section are changed in such a way that the temperature change detected by the above-mentioned temperature detector approaches a predetermined reference waveform; and the above-mentioned operating conditions include the value of one or more control parameters; The step of operating conditions includes: changing the value of at least one of the one or a plurality of control parameters stored in the memory unit so that the detected temperature change is close to the reference waveform; the one or a plurality of control parameters include the above The upper limit of the output of the heat treatment section. A heat treatment method, which is to perform heat treatment on a substrate, comprises the following steps: Placing a substrate on the plate member; heat-treating the placed substrate through the plate member by the heat treatment portion; memorizing the operating conditions of the heat treatment portion for a fixed period from the time when the substrate is placed on the plate member in the memory portion ; Make the heat treatment part operate according to the operating conditions memorized in the memory part; Detect the temperature of the plate member by a temperature detector; The operation conditions stored in the memory section are changed so as to be close to a predetermined reference waveform; and the step of changing the operation conditions is to change the operation conditions in such a way that the change of the operation conditions starts from the time when the substrate is placed on the plate member. The arrival time until the temperature detected by the above-mentioned temperature detector returns to the processing temperature for processing the substrate is close to the preset set time. A heat treatment method for heat treating a substrate, comprising the steps of: placing a substrate on a plate member; heat treating the placed substrate through the plate member by a heat treatment part; operating conditions of the heat treatment part for a fixed period of time from the time point on the plate member; causing the heat treatment part to operate according to the operation conditions memorized in the memory part; detecting the temperature of the plate member by a temperature detector; and making the heat treatment part operate When operating in accordance with the above-mentioned operating conditions, the operation stored in the above-mentioned memory section is changed so that the temperature change detected by the above-mentioned temperature detector approaches a predetermined reference waveform. conditions; and the step of changing the operation conditions is to change the operation conditions in such a way that the temperature detector detects the temperature at a specific time point within the fixed period from the time when the substrate is placed on the plate member. The value of the temperature is close to the value of the temperature of the part corresponding to the above-mentioned specific time point in the above-mentioned reference waveform. A heat treatment method for heat treating a substrate, comprising the steps of: placing a substrate on a plate member; heat treating the placed substrate through the plate member by a heat treatment part; operating conditions of the heat treatment part for a fixed period of time from the time point on the plate member; causing the heat treatment part to operate according to the operation conditions memorized in the memory part; detecting the temperature of the plate member by a temperature detector; and making the heat treatment part operate When operating according to the above-mentioned operating conditions, the operating conditions stored in the memory section are changed in such a way that the temperature change detected by the above-mentioned temperature detector is close to a predetermined reference waveform; the step of changing the above-mentioned operating conditions is to change the operating conditions as follows: That is, the amount of overshoot or undershoot with respect to the set temperature for heat-treating the substrate by the waveform of the detected temperature is reduced. A heat treatment method, comprising the steps of: placing a substrate on a plate member; heat-treating the placed substrate through the plate member by a heat treatment part; Memorizing a plurality of candidate waveforms representing virtual temperature changes of the plate member for a fixed period from the time when the substrate is placed on the plate member, and storing a plurality of operation conditions of the heat treatment section corresponding to the plurality of candidate waveforms respectively In the first memory part; the temperature of the plate member is detected by a temperature detector; one candidate waveform is determined as a reference waveform from a plurality of candidate waveforms stored in the first memory part; the heat treatment part is made according to the first operating on an operating condition corresponding to the one candidate waveform determined as the reference waveform among a plurality of operating conditions stored in the memory unit; In such a way that the temperature change detected by the detector is close to the reference waveform, the operating condition stored in the first memory unit corresponding to the one candidate waveform is changed. The heat treatment method according to claim 18, wherein the step of determining the one candidate waveform as the reference waveform comprises: in response to the user's operation on the operation part, storing the plurality of waveforms stored in the first memory part by the operation part One of the candidate waveforms selected from the candidate waveforms is determined as the above-mentioned reference waveform. The heat treatment method of claim 19, further comprising the step of causing the display unit to selectively display at least a part of the plurality of candidate waveforms. The heat treatment method according to claim 20, wherein the plurality of candidate waveforms stored in the first memory section include a plurality of candidate waveform groups corresponding to the plurality of temperature regions, and the above heat treatment method It further includes the step of determining a temperature for heat treatment of the substrate as a set temperature, and the step of causing the display unit to selectively display at least a part of the plurality of candidate waveforms includes: when the set temperature has been determined, making the The display unit selectively displays a plurality of candidate waveforms of the candidate waveform group corresponding to the temperature region to which the determined processing temperature belongs. The heat treatment method according to any one of claims 18 to 21, wherein each of the plurality of operating conditions memorized in the first memory section includes the value of one or a plurality of control parameters, and the operating condition corresponding to the one candidate waveform is changed The step includes: changing one of the operating conditions corresponding to the one candidate waveform stored in the first memory unit or the value of at least one of a plurality of control parameters so that the detected temperature change is close to the reference waveform . The heat treatment method according to any one of claims 18 to 21, further comprising the steps of: acquiring processing information related to the substrate that has undergone the above-mentioned heat treatment; storing the predetermined correspondence between the processing information and the plurality of candidate waveforms in the in the second storage unit; and based on the correspondence relationship between the processing information acquired by the acquisition step and the above-mentioned correspondence stored in the second storage unit, the candidate waveform corresponding to the acquired processing information is updated in such a way that the reference waveform becomes the reference waveform. reference waveform.

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