KR102388244B1 - Thermal processing apparatus, thermal processing system and thermal processing method - Google Patents

Abstract

A substrate is placed on the heat treatment plate, and heat treatment is performed on the placed substrate. The heater operates according to a predetermined initial operating condition for a predetermined period from the time the substrate is placed on the heat treatment plate, and a change in the temperature of the heat treatment plate is detected. When a plurality of candidate waveforms and a plurality of initial operating conditions respectively corresponding to the plurality of candidate waveforms are stored in the storage unit, one candidate waveform is determined as the reference waveform from the plurality of candidate waveforms. The heater operates according to an initial operating condition corresponding to one candidate waveform determined as a reference waveform for a predetermined period from the time the substrate is placed on the heat treatment plate, and a change in the temperature of the heat treatment plate is detected. The initial operating condition stored in the storage unit is changed so that the detected change in temperature approaches the reference waveform.

Description

Heat treatment apparatus, heat treatment system and heat treatment method

The present invention relates to a heat treatment apparatus, a heat treatment system, and a heat treatment method for performing heat treatment on a substrate.

Conventionally, a substrate for a flat panel display (FPD), a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask used in a liquid crystal display device or an organic EL (Electro Luminescence) display device, etc. In order to heat-process various board|substrates, such as a ceramic board|substrate or a board|substrate for solar cells, the heat processing apparatus is used.

In the heat treatment apparatus, the board|substrate is heat-processed, for example by the board|substrate being supported on the plate member hold|maintained at the preset temperature (henceforth referred to as set temperature). The set temperature is changed according to the content of the processing with respect to the board|substrate.

For example, in the temperature change system described in Japanese Patent No. 5658083, by adjusting the driving state of the heater layer included in the bake plate part (plate member), it is possible to raise or lower the temperature of the bake plate part has been

By the way, when an unprocessed board|substrate is mounted on the plate member hold|maintained at the set temperature, the temperature of a plate member changes under the influence of the temperature of a board|substrate. Therefore, when a board|substrate is mounted on a plate member, it is preferable to quickly return the temperature of a plate member to a set temperature.

The temperature change of the plate member when an unprocessed board|substrate is mounted is predictable to some extent. Therefore, normally, in a heat processing apparatus, after a board|substrate is mounted on a plate member, the operating condition for returning the temperature of a plate member to a preset temperature is predetermined. However, depending on the temperature of the space in which the heat treatment apparatus is installed or individual differences of the heat treatment apparatus, it may be difficult to quickly return the temperature of the plate member to the set temperature even if the heat treatment apparatus is operated according to predetermined operating conditions. In this case, the heat treatment of the substrate cannot be performed with high precision.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a heat treatment apparatus, heat treatment system, and heat treatment method that make it possible to perform heat treatment of a substrate quickly and with high precision.

(1) A heat treatment apparatus according to an aspect of the present invention is a heat treatment apparatus for performing heat treatment on a substrate, comprising: a plate member on which a substrate is placed; and a heat treatment unit for performing heat treatment on a substrate placed on the plate member through the plate member; A storage unit that stores the operating conditions of the heat treatment unit for a certain period from the time the substrate is placed on the plate member, an operation control unit that operates the heat treatment unit according to the operating conditions stored in the storage unit, and the temperature of the plate member is detected. a temperature detector; and a condition change unit for changing the operating conditions stored in the storage unit so that the change in temperature detected by the temperature detector approaches a predetermined reference waveform when the heat treatment unit operates according to the operating conditions.

In the heat treatment apparatus, a substrate is placed on a plate member, and heat treatment is performed on the placed substrate. In the initial stage of this heat treatment, the heat treatment unit operates according to the operating conditions stored in the storage unit for a certain period from the time the substrate is placed on the plate member. Also, a change in the temperature of the plate member is detected. The operating condition stored in the storage unit is changed so that the detected change in temperature approaches the reference waveform.

Accordingly, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment unit operates according to the operating conditions changed during the previous heat treatment at the initial stage of each heat treatment. Thereby, the temperature change of the plate member immediately after the board|substrate is mounted on the plate member approaches a reference waveform compared with the time of the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually and appropriately corrected. Accordingly, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for performing heat treatment of the substrate.

Further, according to the above configuration, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate is appropriately performed without being affected by the temperature change around the heat treatment apparatus. As a result of these, it becomes possible to perform the heat treatment of the substrate quickly and with high precision.

(2) the operating condition includes values of one or a plurality of control parameters, and the condition change unit selects at least one of the one or a plurality of control parameters stored in the storage unit such that the detected change in temperature approaches the reference waveform. You can change the value.

In this case, with a simple process of changing the value of at least one of one or a plurality of control parameters, it is possible to appropriately adjust the temperature of the plate member immediately after the substrate is placed.

(3) the heat treatment unit is configured to enable PID control, and one or a plurality of control parameters are PID control for returning the temperature of the plate member to the processing temperature for processing the substrate from the time the substrate is placed on the plate member At least one of a proportional parameter, an integral parameter, and a differential parameter may be included.

In this case, by changing at least one of the values of the proportional parameter, the integral parameter, and the differential parameter, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted.

(4) One or more control parameters may include an upper limit of the output of the heat treatment unit.

In this case, the temperature of the plate member immediately after the board|substrate is mounted can be suitably adjusted by changing the upper limit of the output of a heat processing part.

(5) the condition change unit operates the condition such that the arrival time from the time when the substrate is placed on the plate member to the time when the temperature detected by the temperature detector returns to the processing temperature for processing the substrate is close to the preset time may be changed.

In this case, based on the arrival time and the set time, the temperature of the plate member immediately after the board|substrate is mounted can be adjusted suitably.

(6) The condition change unit is configured so that the value of the temperature detected by the temperature detector at a specific time within a predetermined period from the time when the substrate is placed on the plate member approaches the value of the temperature of the portion corresponding to the specific time in the reference waveform. The operating conditions may be changed.

In this case, based on the value of the temperature of the plate member, the temperature of the plate member immediately after the substrate is mounted can be appropriately adjusted.

(7) The condition change unit may change the operating conditions so that the amount of overshoot or undershoot with respect to the set temperature for performing heat treatment on the substrate generated in the detected temperature waveform becomes small.

In this case, based on the amount of overshoot or undershoot with respect to the set temperature, the temperature of the plate member immediately after the substrate is placed can be appropriately adjusted.

(8) A heat treatment apparatus according to another aspect of the present invention is a heat treatment apparatus for performing heat treatment on a substrate, comprising: a plate member on which the substrate is placed; A plurality of candidate waveforms representing virtual temperature changes of the plate member over a period from the time the substrate is placed on the plate member are stored, and a plurality of operating conditions of the heat treatment unit respectively corresponding to the plurality of candidate waveforms are stored. a first storage unit; a temperature detector for detecting the temperature of the plate member; a determining unit for determining one candidate waveform from a plurality of candidate waveforms stored in the first storage unit as a reference waveform; An operation control unit for operating the heat treatment unit according to an operating condition corresponding to one candidate waveform determined as a reference waveform among a plurality of operating conditions, and the temperature detected by the temperature detector when the heat treatment unit operates according to an operating condition corresponding to one candidate waveform and a condition change unit for changing an operating condition corresponding to one candidate waveform stored in the first storage unit so that the change in temperature approaches the reference waveform.

In the heat treatment apparatus, a plurality of candidate waveforms representing virtual temperature changes of the plate member in a fixed period from the time the substrate is placed on the plate member are stored in the first storage unit. In addition, a plurality of operating conditions of the heat treatment section respectively corresponding to the plurality of candidate waveforms are stored in the first storage section. One candidate waveform is determined as the reference waveform from the plurality of candidate waveforms stored in the first storage unit.

Thereafter, the substrate is placed on the plate member, and heat treatment is performed on the placed substrate. In the initial stage of this heat treatment, the heat treatment unit operates according to an operating condition corresponding to one candidate waveform determined as a reference waveform for a certain period from the time the substrate is placed on the plate member. Also, a change in the temperature of the plate member is detected. The operating condition corresponding to one candidate waveform stored in the first storage unit is changed so that the detected change in temperature approaches the reference waveform.

Accordingly, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment unit operates according to the operating conditions changed during the previous heat treatment at the initial stage of each heat treatment. Thereby, the temperature change of the plate member immediately after the board|substrate is mounted on the plate member approaches a reference waveform compared with the time of the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually and appropriately corrected. Accordingly, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for performing heat treatment of the substrate.

Further, according to the above configuration, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate is appropriately performed without being affected by the temperature change around the heat treatment apparatus.

Further, according to the above configuration, one candidate waveform among the plurality of candidate waveforms is determined as a reference waveform indicating an appropriate temperature change of the plate member immediately after the substrate is placed on the plate member. As a result of these, it becomes possible to perform the heat treatment of the substrate appropriately and with high precision.

(9) The heat treatment apparatus further includes an operation unit operated by the user to select one candidate waveform from the plurality of candidate waveforms stored in the first storage unit, wherein the determining unit is configured to respond to operation of the operation unit by the user One candidate waveform selected by the operation unit from the plurality of candidate waveforms stored in the first storage unit may be determined as the reference waveform.

In this case, the user can easily determine one candidate waveform from the plurality of candidate waveforms as the reference waveform by using the manipulation unit.

(10) The heat treatment apparatus may further include a display control unit for selectively displaying at least a part of the plurality of candidate waveforms on the display unit.

In this case, the user can easily determine one candidate waveform as the reference waveform while checking at least some of the candidate waveforms displayed on the display unit.

(11) The plurality of candidate waveforms stored in the first storage unit includes a plurality of candidate waveform groups respectively corresponding to the plurality of temperature regions, and the determining unit can determine a temperature for performing heat treatment on the substrate as the preset temperature. and the display control unit may selectably display a plurality of candidate waveforms of the candidate waveform group corresponding to the temperature region to which the determined processing temperature belongs when the set temperature is determined by the determination unit on the display unit.

In this case, the user can easily grasp the selectable candidate waveform according to the set temperature. Accordingly, an inappropriate candidate waveform is prevented from being determined as the reference waveform.

(12) each of the plurality of operating conditions stored in the first storage unit includes values of one or a plurality of control parameters, and the condition change unit is configured to cause the detected temperature change to approximate the reference waveform, such that the first storage unit You may change the value of at least one of one or a plurality of control parameters of an operating condition corresponding to one candidate waveform stored in .

In this case, with a simple process of changing the value of at least one of one or a plurality of control parameters, it is possible to appropriately adjust the temperature of the plate member immediately after the substrate is placed.

(13) A heat treatment system according to still another aspect of the present invention includes a heat treatment apparatus according to an aspect of the present invention, an information acquisition unit for obtaining processing information regarding a substrate subjected to heat treatment by the heat treatment apparatus, the processing information and a plurality of a second storage unit for storing a predetermined correspondence relationship between the candidate waveforms of and a waveform update unit that updates the reference waveform so that the candidate waveform corresponding to .

According to the heat treatment system, the reference waveform is updated according to the acquired processing information. Thereby, it becomes possible to perform the heat processing of the board|substrate by the heat processing apparatus more appropriately and with high precision.

(14) A heat treatment method according to another aspect of the present invention is a heat treatment method for performing heat treatment on a substrate, comprising: placing the substrate on a plate member; the steps of: storing the operating conditions of the heat treatment unit in a storage unit for a certain period from the time the substrate is placed on the plate member; operating the heat treatment unit according to the operating conditions stored in the storage unit; detecting the temperature by the temperature detector, and changing the operating condition stored in the storage unit so that the change in temperature detected by the temperature detector approaches a predetermined reference waveform when the heat treatment unit operates according to the operating condition. include

In the heat treatment method, a substrate is placed on a plate member, and heat treatment is performed on the placed substrate. In the initial stage of this heat treatment, the heat treatment unit operates according to the operating conditions stored in the storage unit for a certain period from the time the substrate is placed on the plate member. Also, a change in the temperature of the plate member is detected. The operating condition stored in the storage unit is changed so that the detected change in temperature approaches the reference waveform.

Accordingly, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment unit operates according to the operating conditions changed during the previous heat treatment at the initial stage of each heat treatment. Thereby, the temperature change of the plate member immediately after the board|substrate is mounted on the plate member approaches a reference waveform compared with the time of the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually and appropriately corrected. Accordingly, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for performing heat treatment of the substrate.

In addition, according to the above method, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate W is appropriately performed without being affected by the temperature change around the heat treatment apparatus. As a result of these, it becomes possible to perform the heat treatment of the substrate quickly and with high precision.

(15) the operating condition includes values of one or a plurality of control parameters, and the step of changing the operating condition includes one or more control parameters stored in the storage unit such that the detected change in temperature approaches the reference waveform. It may include changing the value of at least one of them.

In this case, with a simple process of changing the value of at least one of one or a plurality of control parameters, it is possible to appropriately adjust the temperature of the plate member immediately after the substrate is placed.

(16) A heat treatment method according to another aspect of the present invention is a heat treatment method for performing heat treatment on a substrate, comprising: placing the substrate on a plate member; Storing a plurality of candidate waveforms representing virtual temperature changes of the plate member in a predetermined period from the time the substrate is placed on the plate member, and a plurality of operating conditions of the heat treatment unit respectively corresponding to the plurality of candidate waveforms storing in the first storage unit; detecting the temperature of the plate member by a temperature detector; determining one candidate waveform as a reference waveform from a plurality of candidate waveforms stored in the first storage unit; operating the heat treatment unit according to an operating condition corresponding to one candidate waveform determined as the reference waveform among the plurality of operating conditions stored in the first storage unit, and when the heat treatment unit operates according to the operating condition corresponding to the one candidate waveform and changing the operating condition corresponding to one candidate waveform stored in the first storage unit so that the change in temperature detected by the temperature detector approaches the reference waveform.

In the heat treatment method, a plurality of candidate waveforms representing virtual temperature changes of the plate member in a fixed period from the time the substrate is placed on the plate member are stored in the first storage unit. In addition, a plurality of operating conditions of the heat treatment section respectively corresponding to the plurality of candidate waveforms are stored in the first storage section. One candidate waveform is determined as the reference waveform from the plurality of candidate waveforms stored in the first storage unit.

Thereafter, the substrate is placed on the plate member, and heat treatment is performed on the placed substrate. In the initial stage of this heat treatment, the heat treatment unit operates according to an operating condition corresponding to one candidate waveform determined as a reference waveform for a certain period from the time the substrate is placed on the plate member. Also, a change in the temperature of the plate member is detected. The operating condition corresponding to one candidate waveform stored in the first storage unit is changed so that the detected change in temperature approaches the reference waveform.

Accordingly, when a plurality of substrates are sequentially subjected to heat treatment, the heat treatment unit operates according to the operating conditions changed during the previous heat treatment at the initial stage of each heat treatment. Thereby, the temperature change of the plate member immediately after the board|substrate is mounted on the plate member approaches a reference waveform compared with the time of the previous heat treatment.

In this way, the temperature change of the plate member immediately after the substrate is placed on the plate member is gradually and appropriately corrected. Accordingly, the temperature of the plate member immediately after the substrate is placed is quickly adjusted to an appropriate temperature for performing heat treatment of the substrate.

Further, according to the above configuration, even when the temperature around the heat treatment apparatus changes, the operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate is appropriately performed without being affected by the temperature change around the heat treatment apparatus.

Further, according to the above configuration, one candidate waveform among the plurality of candidate waveforms is determined as a reference waveform indicating an appropriate temperature change of the plate member immediately after the substrate is placed on the plate member. As a result of these, it becomes possible to perform the heat treatment of the substrate appropriately and with high precision.

(17) In the step of determining one candidate waveform as the reference waveform, one candidate waveform selected by the operation unit from the plurality of candidate waveforms stored in the first storage unit in response to the operation of the operation unit by the user is determined as the reference waveform may include doing

In this case, one candidate waveform can be easily determined as a reference waveform from a plurality of candidate waveforms by using the manipulation unit.

(18) The heat treatment method may further include the step of displaying at least a part of the plurality of candidate waveforms on the display unit in a selectable manner.

In this case, one candidate waveform can be easily determined as a reference waveform while checking at least some of the candidate waveforms displayed on the display unit.

(19) The plurality of candidate waveforms stored in the first storage unit includes a plurality of candidate waveform groups respectively corresponding to the plurality of temperature regions, and the heat treatment method determines a temperature for performing heat treatment on the substrate as a preset temperature. and the step of selectively displaying at least a portion of the plurality of candidate waveforms on the display unit comprises: when the set temperature is determined, a plurality of candidate waveforms of the candidate waveform group corresponding to the temperature region to which the determined processing temperature belongs may include displaying on the display unit in a selectable manner.

In this case, it is possible to easily grasp the selectable candidate waveform according to the set temperature. Accordingly, an inappropriate candidate waveform is prevented from being determined as the reference waveform.

(20) each of the plurality of operating conditions stored in the first storage unit includes a value of one or a plurality of control parameters, and the step of changing the operating condition corresponding to one candidate waveform includes: a change in the detected temperature It may include changing the value of at least one of one or a plurality of control parameters of the operating condition corresponding to the one candidate waveform stored in the first storage unit so that ?

In this case, with a simple process of changing the value of at least one of one or a plurality of control parameters, it is possible to appropriately adjust the temperature of the plate member immediately after the substrate is placed.

(21) The heat treatment method comprises the steps of: acquiring process information on a substrate subjected to heat treatment; storing a predetermined correspondence relationship between the process information and a plurality of candidate waveforms in a second storage unit; and acquiring The method may further include a step of updating the reference waveform so that the candidate waveform corresponding to the acquired processing information becomes the reference waveform based on the obtained processing information and the correspondence relationship stored in the second storage unit.

In this case, the reference waveform is updated according to the acquired processing information. Thereby, it becomes possible to perform the heat processing of the board|substrate by the heat processing apparatus more appropriately and with high precision.

1 is a schematic side view showing the configuration of a heat treatment apparatus according to a first embodiment;
2 is a view showing an example of a change in temperature of a heat treatment plate when heat treatment is sequentially performed on a plurality of substrates;
3 is a view showing an example of initial operating conditions set for each of a plurality of set temperatures;
4 is a view for explaining a specific change example of the initial operating condition;
5 is a flowchart showing an example of temperature adjustment processing;
6 is a flowchart showing an example of temperature adjustment processing;
Fig. 7 is a schematic block diagram showing an example of a substrate processing apparatus including the heat treatment apparatus of Fig. 1;
Fig. 8 is a schematic side view showing the configuration of a heat treatment apparatus according to the second embodiment;
Fig. 9 is a diagram showing an example of a plurality of candidate waveforms stored in the storage unit of Fig. 8;
Fig. 10 is a diagram showing an example of a plurality of initial operating conditions respectively corresponding to a plurality of candidate waveforms of Fig. 9;
Fig. 11 is a view showing an example of a setting screen of a processing recipe displayed on the display unit of Fig. 8;
Fig. 12 is a view showing an example of a setting screen of a processing recipe displayed on the display unit of Fig. 8;
13 is a block diagram showing the configuration of a heat treatment system according to a third embodiment;
Fig. 14 is a diagram showing an example of a line width waveform table stored in the storage unit of Fig. 13;
Fig. 15 is a flowchart showing an example of a series of processing performed by the waveform update unit of Fig. 13;

[1] First embodiment

EMBODIMENT OF THE INVENTION Hereinafter, the heat processing apparatus and heat processing method which concern on 1st Embodiment are demonstrated, referring drawings. In the following description, a substrate means a substrate for a flat panel display (FPD) used in a liquid crystal display device or an organic EL (Electro Luminescence) display device, etc., a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, etc. , a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. In the following description, a heat treatment apparatus for performing heat treatment on a substrate as an example of the heat treatment apparatus will be described.

(1) Configuration of heat treatment device

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic side view which shows the structure of the heat processing apparatus which concerns on 1st Embodiment. As shown in FIG. 1 , the heat treatment device 100 includes a heat treatment plate 10 , an active cooling plate 20 , a passive cooling plate 30 , a lifting device 40 , and a control device 50 .

The heat treatment plate 10 is a metal heat transfer plate having a flat cylindrical shape, and has a flat upper surface and a flat lower surface. The upper surface of the heat treatment plate 10 is configured to be capable of mounting a substrate W to be subjected to heat treatment, and has an outer diameter larger than the outer diameter of the substrate W. A plurality of proximity balls for supporting the lower surface of the substrate W are provided on the upper surface of the heat treatment plate 10 . In FIG. 1, the board|substrate W mounted on the heat treatment plate 10 is represented by the dashed-dotted line.

The heat treatment plate 10 is provided with a heater 11 and a temperature sensor 19 . The temperature sensor 19 detects the temperature of the upper surface of the heat treatment plate 10 , and outputs a detection signal corresponding to the detected temperature to a temperature acquisition unit 55 , which will be described later.

The heater 11 is constituted by, for example, a mica heater or a Peltier element. A heat generating drive unit 13 is connected to the heater 11 . The heat generating drive unit 13 drives the heater 11 so that, for example, the temperature of the heat treatment plate 10 is maintained at a preset temperature (set temperature) for performing the heat treatment of the substrate W . In addition, the heat generating drive unit 13 drives the heater 11 so that, for example, the temperature of the heat treatment plate 10 rises or falls.

The active cooling plate 20 is disposed at a position below the heat treatment plate 10 and away from the lower surface of the heat treatment plate 10 by a predetermined distance. The active cooling plate 20 has an upper surface facing the heat treatment plate 10 . A heat conductive sheet (not shown) having high heat conductivity is provided on the upper surface of the active cooling plate 20 .

The active cooling plate 20 is provided with a cooling mechanism 21 . The cooling mechanism 21 is constituted by, for example, a cooling water passage or a Peltier element formed in the active cooling plate 20 . A cooling drive unit 22 is connected to the cooling mechanism 21 . The cooling driving unit 22 drives the cooling mechanism 21 so that the temperature of the upper surface of the active cooling plate 20 is lower than the temperature of the heat treatment plate 10 .

The passive cooling plate 30 is supported in a space between the heat treatment plate 10 and the active cooling plate 20 so as to be raised and lowered by the lifting device 40 (refer to the gray arrow in FIG. 1 ). . The passive cooling plate 30 is a metal disk-shaped member, and has an upper surface and a lower surface. The upper surface of the passive cooling plate 30 faces the lower surface of the heat treatment plate 10 , and the lower surface of the passive cooling plate 30 faces the upper surface of the active cooling plate 20 . A heat conductive sheet (not shown) having high heat conductivity is provided on the upper surface of the passive cooling plate 30 .

The raising/lowering device 40 is comprised with an air cylinder, for example. The lift drive unit 41 is connected to the lift device 40 . The raising/lowering drive part 41 drives the raising/lowering device 40 so that the passive cooling plate 30 may contact the active cooling plate 20, for example. In this case, the passive cooling plate 30 is cooled by the active cooling plate 20 . Further, the lifting drive unit 41 drives the lifting device 40 so that the passive cooling plate 30 is in contact with the heat treatment plate 10 , for example. In this case, the heat treatment plate 10 is cooled by the passive cooling plate 30 .

The control device 50 controls the operation of each component of the heat treatment apparatus 100 including the heat generating drive unit 13 , the cooling drive unit 22 , and the elevation drive unit 41 . The details of the control device 50 will be described later. In addition, in the heat treatment apparatus 100 described above, a water supply mechanism for transferring the substrate W between the heat treatment plate 10 and an external device (eg, a transfer robot) of the heat treatment apparatus 100 . (not shown) is further installed.

(2) Heat treatment of the plurality of substrates W in the heat treatment apparatus 100

In the heat treatment apparatus 100 of FIG. 1 , a plurality of substrates W are sequentially heat-treated at a set temperature according to the content of each heat treatment. FIG. 2 is a diagram showing an example of a change in temperature of the heat treatment plate 10 when heat treatment is sequentially performed on a plurality of substrates W. As shown in FIG.

In the graph shown in FIG. 2 , the vertical axis indicates the temperature of the heat treatment plate 10 , and the horizontal axis indicates time. In addition, the temperature change of the heat treatment plate 10 is indicated by a thick solid line. In this example, with respect to the board|substrate W of 9 sheets, the content of the heat processing is changed for every 3 board|substrate W. Therefore, the set temperature of the heat treatment plate 10 is changed for every three board|substrates W.

Specifically, in the period of time t1 to t2, the heat treatment is sequentially performed on the three substrates W while the temperature of the heat treatment plate 10 is maintained at a set temperature of 90°C. Further, in the period of time t3 to t4, the heat treatment is sequentially performed on the three substrates W while the temperature of the heat treatment plate 10 is maintained at a set temperature of 115°C. Further, in the period of time t5 to t6, the heat treatment is sequentially performed on the three substrates W while the temperature of the heat treatment plate 10 is maintained at the set temperature of 140°C.

When the untreated substrate W is placed on the heat treatment plate 10 maintained at the set temperature, the temperature of the heat treatment plate 10 is lowered from the set temperature as indicated by the gray arrow in FIG. 2 . The amount of temperature decrease of the heat treatment plate 10 in this case varies depending on the set temperature. The higher the set temperature, the larger the temperature drop, and the lower the set temperature, the smaller the temperature drop.

After the substrate W is placed on the heat treatment plate 10 , if the temperature of the heat treatment plate 10 continues to deviate from the set temperature, a predetermined heat treatment cannot be accurately performed on the substrate W . Then, after the unprocessed board|substrate W is mounted on the heat treatment plate 10, while quickly returning the temperature of the heat treatment plate 10 to a set temperature, control for stabilizing to a set temperature is performed.

Specifically, in this example, PID (Proportional Integral Differential) control based on the detection signal of the temperature sensor 19 is performed with respect to the heater 11 . In addition, the upper limit of the output of the heater 11 is adjusted.

For each of the plurality of set temperatures, the operating conditions of the heat treatment apparatus 100 for returning the temperature of the heat treatment plate 10 to the set temperature may be obtained by simulation or experimentation. Therefore, in the heat treatment apparatus 100, the operating conditions of the heater 11 for a certain period from the time when the substrate W is placed on the heat treatment plate 10 (hereinafter, for each of the plurality of set temperatures) It is called the initial operating condition.) is set in advance.

3 : is a figure which shows an example of the initial stage operation condition set with respect to each of a some set temperature. The initial operating conditions of FIG. 3 include values of parameters of the PID control for the heater 11 . In addition, the value of the upper limit parameter indicating the upper limit of the output of the heater 11 is included in the initial operating condition. In FIG. 3, the upper limit parameter is indicated as "heater upper limit". The value of the upper limit parameter is expressed, for example, as a ratio (%) of the upper limit of the allowable output with respect to the rated output of the heater 11 .

According to the example of FIG. 3 , the initial operating conditions corresponding to the set temperature of 90° C. include a proportional parameter “0.4”, an integral parameter “15”, a derivative parameter “3”, and an upper limit parameter “80 (%)”. In addition, the initial operating condition corresponding to the set temperature of 115 degreeC includes a proportional parameter "0.3", an integral parameter "15", a differential parameter "3", and an upper limit parameter "90 (%)". In addition, the initial operating conditions corresponding to the set temperature of 140 degreeC include the proportional parameter "0.2", the integral parameter "15", the differential parameter "3", and the upper limit parameter "100 (%)".

However, depending on the temperature of the space in which the heat treatment apparatus 100 is installed, it cannot be said that the preset initial operating condition is appropriate. In addition, the case where common heat processing is performed to the some board|substrate W using the some heat processing apparatus 100 like the substrate processing apparatus 400 (FIG. 7) mentioned later is assumed. In this case, individual differences usually exist between the plurality of heat treatment apparatuses 100 . Therefore, when a common initial operation condition is set for the plurality of heat treatment apparatuses 100 , there is a possibility that ideal temperature adjustment cannot be performed in each heat treatment apparatus 100 .

Therefore, in the heat treatment apparatus 100 according to the present embodiment, whenever the heat treatment of the substrate W is performed, the temperature change of the heat treatment plate 10 in a fixed period from the time when the substrate W is placed is ideal. The initial operating conditions are changed to approximate the reference waveform. The reference waveform is determined so that the temperature of the heat treatment plate 10 lowered by the placement of the substrate W quickly returns to the set temperature and is stable. The reference waveform is determined for each set temperature, for example, based on the configuration of the heat treatment plate 10 and the heat generating capability of the heater 11 .

Here, it is assumed that a reference waveform corresponding to a set temperature of 90°C and an overshoot amount of 0 with respect to a set temperature of 90°C is set. For example, when the first substrate W of FIG. 2 is heat-treated at a set temperature of 90° C., the heat treatment apparatus 100 operates according to a predetermined initial operating condition. In this case, when a large overshoot occurs in the temperature change of the heat treatment plate 10 , the initial operating condition corresponding to the set temperature of 90° C. is changed so that the overshoot amount approaches zero. Thereafter, when the second substrate W is heat-treated at a set temperature of 90° C., the heat treatment apparatus 100 operates according to the initial operating conditions after the change. As a result, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 approaches the reference waveform compared to the heat treatment of the first substrate W. Therefore, in the heat treatment of the second substrate W, after the substrate W is placed on the heat treatment plate 10 , the temperature of the heat treatment plate 10 increases when the heat treatment of the first substrate W is performed. It returns to the set temperature more quickly and accurately compared to that.

In addition, if overshoot occurs again in the temperature change of the heat treatment plate 10 when the second substrate W is heat-treated at a set temperature of 90 ° C. The initial operating conditions are changed again. Thereafter, when the third substrate W is heat-treated at a set temperature of 90° C., the heat treatment apparatus 100 operates according to the initial operating conditions after the change. Accordingly, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 approaches the reference waveform compared to the heat treatment of the second substrate W. Therefore, in the heat treatment of the third substrate W, after the substrate W is placed on the heat treatment plate 10 , the temperature of the heat treatment plate 10 increases when the heat treatment of the second substrate W is performed. It returns to the set temperature more quickly and accurately compared to that.

In the example of FIG. 2 , also for the initial operating conditions corresponding to the set temperatures of 115 ° C. and 140 ° C., as in the example in the case of the set temperature of 90 ° C., whenever the heat treatment of the substrate W is performed, the heat treatment plate 10 The change of the initial operating condition according to the temperature change is performed.

As described above, each time the substrate W is heat-treated, the initial operating condition is changed according to the actual temperature change of the heat treatment plate 10 . In this case, as the heat treatment of the substrate W is repeated, the precision of the heat treatment is improved. In addition, according to the above control, when a common heat treatment is performed on the plurality of substrates W using the plurality of heat treatment apparatuses 100 , the heating of the substrate W between the plurality of heat treatment apparatuses 100 . The occurrence of variations in processing is suppressed.

(3) Specific examples of changes in initial operating conditions

Fig. 4 is a diagram for explaining a specific change example of initial operating conditions. In the graph shown at the upper end of FIG. 4 , the vertical axis indicates temperature and the horizontal axis indicates time. In addition, in the graph, an example of the temperature change of the heat treatment plate 10 detected by the temperature sensor 19 of FIG. 1 during the heat treatment of one substrate W is indicated by a thick solid line. The waveform indicated by this thick solid line is called a real waveform. In addition, in the graph shown in the upper part of FIG. 4, the reference waveform predetermined corresponding to the set temperature of the heat processing of this example is represented by the dashed-dotted line.

In this example, the heat treatment plate 10 is maintained at the set temperature value α at the time point t0, and then the substrate W is placed on the heat treatment plate 10 at the time point t10 to start the heat treatment. make it as The reference waveform falls from the value α of the set temperature to a value β lower than the value α from the time point t10 to the time point t11, and rises from the value β to the value α from the time point t11 to the time point t12, there is. Further, after the time point t12, the reference waveform slightly exceeds the value α for a minute time, and then is maintained at the value α. It is assumed that the overshoot amount of the reference waveform with respect to the value α is substantially zero. In the following description, the time from the point in time t10 at which the substrate W is placed on the heat treatment plate 10 to the point in time t12 at which the reference waveform returns to the value α of the set temperature is referred to as a set time.

In the example in the upper part of FIG. 4, the real waveform deviate|deviates greatly from a reference waveform. Specifically, the real waveform falls from the value α of the set temperature to a value γ lower than the value β from the time point t10 to the time point t11, and from the time point t11 to the time point t13 before the time point t12. is rising from the value γ to the value α over In addition, a large overshoot occurs with respect to the value α in the real waveform immediately after the time point t13. As a result, the real waveform is not stable until a relatively long time elapses after the lapse of the time point t12.

In order to change the initial operating condition, for example, the value of the real waveform at a predetermined time point (in this example, the time point at which the reference waveform takes the minimum value) t11 in the period from the time point t10 to the time point t12. γ is obtained. The acquired value γ is contrasted with the value β of the reference waveform at the time t11. Further, the time pr from the time point t10 to the time point t13 at which the real waveform returns to the value α is obtained. In the following description, the time pr corresponding to this real waveform is called arrival time. Also, the overshoot amount OS of the real waveform with respect to the value α, which occurs immediately after the time point t13, is acquired.

When the value γ of the real waveform at the time t11 is outside a predetermined allowable range for the value of the real waveform, the real waveform deviates greatly from the reference waveform. Therefore, it is desirable to change the initial operating conditions. Therefore, when the value γ of the real waveform at the time t11 is outside the allowable range and the value γ is lower than the value β, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 becomes large. Thereby, the value of the real waveform approaches the value of the reference waveform. On the other hand, when the value γ of the real waveform at the time t11 is outside the allowable range and the value γ is higher than the value β, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 becomes small. Thereby, the value of the real waveform approaches the value of the reference waveform.

In addition, when the arrival time pr is outside a predetermined allowable range with respect to the arrival time, the actual waveform deviates greatly from the reference waveform. Therefore, it is desirable to change the initial operating conditions. Therefore, when the arrival time pr is outside the allowable range and the arrival time pr is shorter than the set time, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 becomes small. Thereby, the arrival time pr approaches the set time. On the other hand, when the arrival time pr is outside the allowable range and the arrival time pr is longer than the set time, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 becomes large. Thereby, the arrival time pr approaches the set time.

Further, when the acquired overshoot amount OS exceeds a predetermined allowable range for the overshoot amount OS, the actual waveform deviates greatly from the reference waveform. Therefore, it is desirable to change the initial operating conditions. Therefore, when the overshoot amount OS exceeds the allowable range, the initial operating conditions are changed so that the amount of heat supplied to the heat treatment plate 10 becomes small. Thereby, the overshoot amount OS becomes small.

In the graph shown at the bottom of FIG. 4 , the vertical axis indicates the output of the heater 11 and the horizontal axis indicates time. In addition, in the graph, the output waveform of the heater 11 controlled according to the preset initial operating condition is indicated by a thick solid line. This output waveform corresponds to the real waveform shown in the graph of the upper stage of FIG. In this example, from the time point t0 to the time point t10, the output of the heater 11 is maintained at a constant value SP. Thereafter, the output of the heater 11 is increased at the time point t10, and is adjusted by PID control based on the initial operating conditions.

Here, in the case of reducing the amount of heat supplied to the heat treatment plate 10, for example, by greatly changing the value of the proportional parameter of the PID control, as indicated by a gray arrow a13 in FIG. It is enough to lower the output waveform as a whole. Alternatively, for example, by changing the upper limit parameter small, as indicated by the gray-haired arrow a14 in FIG. 4 , the value MP of the upper limit of the output of the heater 11 may be lowered.

On the other hand, in the case of increasing the amount of heat supplied to the heat treatment plate 10, for example, by changing the value of the proportional parameter of the PID control to be small, as indicated by the gray arrow a15 in FIG. It is enough to increase the overall output waveform. Alternatively, for example, by largely changing the upper limit parameter, the upper limit value MP of the output of the heater 11 may be increased as indicated by the gray-haired arrow a16 in FIG. 4 .

(4) control device (50)

As shown in FIG. 1 , the control device 50 includes, as functional units, a storage unit 51 , a heat generation control unit 52 , a cooling control unit 53 , an elevation control unit 54 , a temperature acquisition unit 55 , and It has a condition change unit (56). The control device 50 is constituted by a CPU (Central Processing Unit), a RAM (Random Access Memory), and a ROM (Read Only Memory). When the CPU executes a computer program (a program for temperature adjustment processing to be described later) stored in a ROM or other storage medium, each of the above functional units is realized. In addition, some or all of the functional components of the control apparatus 50 may be implemented by hardware, such as an electronic circuit.

In the control apparatus 50 which concerns on 1st Embodiment, the memory|storage part 51 memorize|stores preset initial operation conditions with respect to each of a some set temperature. The heat generation control unit 52 detects output from the temperature sensor 19 so as to operate according to the initial operating conditions stored in the storage unit 51 at the beginning of the heat treatment of the substrate W by the heat treatment plate 10 . Based on the signal, the heat generating driving unit 13 is controlled. The cooling control unit 53 controls the cooling driving unit 22 to cool the active cooling plate 20 while the power of the heat treatment apparatus 100 is turned on. When lowering the set temperature of the heat treatment plate 10 , the elevation control unit 54 controls the elevation device 40 so that the passive cooling plate 30 comes into contact with the heat treatment plate 10 .

Further, in the control device 50 according to the first embodiment, the temperature acquisition unit 55 acquires the temperature of the heat treatment plate 10 based on the detection signal output from the temperature sensor 19 . More specifically, the temperature acquisition unit 55 acquires a change in temperature by sampling the detection signal output from the temperature sensor 19 at a fixed period. The condition change unit 56 changes the initial operating condition stored in the storage unit 51 so that the change in the temperature acquired by the temperature acquisition unit 55 approaches a predetermined reference waveform.

In addition, the heat treatment apparatus 100 is provided with an operation part (not shown). By operating the operation unit, the user can make the storage unit 51 store the initial initial operating conditions and the reference waveform for each set temperature. That is, the user can set the initial operating condition and the reference waveform for each of the plurality of set temperatures.

(5) temperature control processing

The change of the initial operating condition stored in the storage unit 51 is performed when the control device 50 of FIG. 1 executes the following temperature adjustment process. 5 and 6 are flowcharts showing an example of a temperature adjustment process. The temperature adjustment process is started when the power supply of the heat treatment apparatus 100 is turned on.

First, the heating control unit 52 and the elevation control unit 54 of FIG. 1 controls the heating driving unit 13 or the elevation driving unit 41 so that the temperature of the heat treatment plate 10 is maintained at a set temperature (step S10). ). Here, the value of the set temperature of the heat treatment plate 10 is given to the control device 50 from the outside of the heat treatment device 100 , for example.

Next, the heat generation control unit 52 determines whether or not the substrate W is placed on the heat treatment plate 10 (step S11). This determination is made, for example, based on whether or not a signal indicating that the substrate W is placed on the heat treatment plate 10 is received from the outside of the heat treatment apparatus 100 . Alternatively, when a sensor for detecting the presence or absence of the substrate W on the heat treatment plate 10 is provided in the heat treatment apparatus 100 , the heat generation control unit 52 may make the above determination based on the output of the sensor do.

When the substrate W is not placed on the heat treatment plate 10 , the heat generation control unit 52 and the elevation control unit 54 return to the processing of step S10 . On the other hand, when the substrate W is placed on the heat treatment plate 10 , the heat generation control unit 52 reads the initial operating conditions corresponding to the current set temperature from the storage unit 51 of FIG. 1 (step S12 ). ).

Next, the heat generating control unit 52 adjusts the temperature of the heat treatment plate 10 by controlling the heat generating drive unit 13 based on the read initial operating conditions and the output of the temperature sensor 19 (step S13). At this time, the temperature acquisition unit 55 acquires a change in the temperature of the heat treatment plate 10 during the heat treatment of the substrate W (step S14 ).

After that, when the heat treatment of the substrate W is completed, the condition change unit 56 determines the arrival time pr in the heat treatment ( FIG. 4 ) based on the acquired temperature change as the arrival time pr ), it is determined whether or not it is outside a predetermined allowable range (step S15). In addition, the allowable range used in step S15 may be a set time. That is, the allowable range used in step S15 may be determined so that only the arrival time pr coincides with the set time.

When the arrival time pr is out of the allowable range, the condition change unit 56 calculates the difference between the arrival time pr in the heat treatment and the set time of the reference waveform (step S16). On the other hand, when the arrival time pr is within the allowable range, the condition change unit 56 determines, based on the acquired temperature change, the temperature value at a specific point in time during the heat treatment to be within a predetermined allowable range for the temperature value. It is determined whether or not it is outside (step S17). In addition, the allowable range used in step S17 may be the temperature value of the reference waveform at a specific time point. That is, the allowable range used in step S17 may be determined so as to allow only the actual temperature value at a specific point in time coincides with the temperature value of the reference waveform.

When the temperature value is out of the allowable range, the condition change unit 56 calculates a difference between the temperature value acquired at a specific time point and the temperature value of the reference waveform based on the acquired temperature change (step S18). On the other hand, when the temperature value is within the allowable range, the condition change unit 56 determines whether or not the overshoot amount OS during the heat treatment is outside the predetermined allowable range for the overshoot amount OS. (Step S19). In addition, the allowable range used in step S19 may be 0. That is, the allowable range used in step S19 may be determined so as to allow only that in which overshoot does not occur.

When the overshoot amount OS is out of the allowable range, the condition change unit 56 calculates a difference between the acquired overshoot amount OS and the overshoot amount of the reference waveform based on the acquired temperature change. (Step S20). On the other hand, when the overshoot amount OS is within the allowable range, the heat generation control unit 52 and the elevation control unit 54 return to the processing of step S10.

After the processing of any one of steps S16, S18, and S20, the condition change unit 56 determines a parameter to be changed among the initial operating conditions based on the calculated difference between the time, temperature value, or overshoot amount. (Step S21). For example, the condition change unit 56 determines the parameter to be changed according to the calculated difference level. Specifically, when the level of the difference is high, the condition change unit 56 determines the proportional parameter of the PID control as the parameter to be changed. In addition, when the level of the difference is low, the condition change unit 56 determines the upper limit parameter as a parameter to be changed.

Next, the condition change unit 56 changes the parameter to be changed according to a predetermined method (step S22). For example, the condition change unit 56 changes the value of the parameter determined as the change target by a predetermined value. As a result, the initial operating conditions stored in the storage unit 51 are changed. Thereafter, the heat generation control unit 52 and the elevation control unit 54 return to the processing of step S10.

In the above temperature adjustment processing, some processing of steps S15, S17, and S19 may be omitted. In this case, the difference calculation processing (process in any one of steps S16, S18, and S20) accompanying the omitted processing is also omitted.

(6) Effects of the first embodiment

In the above-described heat treatment apparatus 100 , a substrate W is placed on a heat treatment plate 10 , and heat treatment is performed on the placed substrate W . In the initial stage of this heat treatment, the heater 11 operates according to the initial operating conditions stored in the storage unit 51 for a certain period from the time the substrate W is placed on the heat treatment plate 10 . Also, a change in the temperature of the heat treatment plate 10 is detected. The initial operating condition stored in the storage unit 51 is changed so that the detected change in temperature approaches the reference waveform.

Accordingly, when the plurality of substrates W are sequentially heat-treated, the heater 11 operates according to the initial operating conditions changed during the previous heat treatment at the initial stage of each heat treatment. Thereby, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 approaches the reference waveform compared to the time of the previous heat treatment.

In this way, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is gradually and appropriately corrected. Accordingly, the temperature of the heat treatment plate 10 immediately after the substrate W is placed is quickly adjusted to an appropriate temperature for performing the heat treatment of the substrate W.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus 100 changes, the initial operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate W is appropriately performed without being affected by the temperature change around the heat treatment apparatus 100 . As a result of these, it becomes possible to perform the heat treatment of the substrate quickly and with high precision.

(7) A substrate processing apparatus including the heat treatment apparatus 100 of FIG. 1 .

FIG. 7 is a schematic block diagram illustrating an example of a substrate processing apparatus including the heat treatment apparatus 100 of FIG. 1 . As shown in FIG. 7 , the substrate processing apparatus 400 is installed adjacent to the exposure apparatus 500 , and includes a control unit 410 , a coating processing unit 420 , a developing processing unit 430 , a heat treatment unit 440 , and A substrate transfer device 450 is provided. The heat treatment unit 440 includes a plurality of heat treatment apparatuses 100 of FIG. 1 for performing a heat treatment on the substrate W, and a plurality of cooling plates (not shown) for performing only a cooling treatment on the substrate W.

The control unit 410 includes, for example, a CPU and a memory, or a microcomputer, and controls the operations of the coating processing unit 420 , the developing processing unit 430 , the heat treatment unit 440 , and the substrate transfer device 450 .

The substrate transfer apparatus 450 transfers the substrate W to the coating processing unit 420 , the developing processing unit 430 , the heat treatment unit 440 , and the exposure apparatus when the substrate W is processed by the substrate processing apparatus 400 . It is conveyed between (500).

The coating processing unit 420 forms a resist film on one surface of the unprocessed substrate W (coating processing). The substrate W after the coating treatment on which the resist film is formed is subjected to an exposure treatment in an exposure apparatus 500 . The developing unit 430 develops the substrate W by supplying a developing solution to the substrate W after exposure treatment by the exposure apparatus 500 . The heat treatment unit 440 performs heat treatment of the substrate W before and after the coating treatment by the coating unit 420 , the developing treatment by the developing unit 430 , and the exposure treatment by the exposure apparatus 500 .

In addition, the application|coating processing part 420 may form the antireflection film on the board|substrate W. In this case, the heat treatment unit 440 may be provided with a processing unit for performing adhesion strengthening treatment for improving adhesion between the substrate W and the antireflection film. In addition, the coating processing unit 420 may form a resist cover film on the substrate W for protecting the resist film formed on the substrate W.

As described above, in the plurality of heat treatment apparatuses 100 of the heat treatment unit 440 , temperature adjustment processing is performed. Thereby, it is possible to perform uniform heat processing with respect to the some board|substrate W with high precision. In addition, even when a common heat treatment is performed on the plurality of substrates W by the plurality of heat treatment apparatuses 100 having individual differences from each other, uniform heat treatment with high precision is performed on the plurality of substrates W. it is possible to do

[2] Second embodiment

EMBODIMENT OF THE INVENTION Hereinafter, the heat processing apparatus and heat processing method which concern on 2nd Embodiment are demonstrated, referring drawings.

(1) Configuration of heat treatment device

8 is a schematic side view showing the configuration of a heat treatment apparatus according to a second embodiment. As shown in FIG. 8 , the heat treatment device 100 includes a heat treatment plate 10 , an active cooling plate 20 , a passive cooling plate 30 , a lifting device 40 , a control device 50 , and an operation unit 61 . ) and a display unit 62 .

The heat treatment plate 10 is a metal heat transfer plate having a flat cylindrical shape, and has a flat upper surface and a flat lower surface. The upper surface of the heat treatment plate 10 is configured to be capable of mounting a substrate W to be subjected to heat treatment, and has an outer diameter larger than the outer diameter of the substrate W. A plurality of proximity balls for supporting the lower surface of the substrate W are provided on the upper surface of the heat treatment plate 10 . In FIG. 8 , the substrate W placed on the heat treatment plate 10 is indicated by a dashed-dotted line.

The heat treatment plate 10 is provided with a heater 11 and a temperature sensor 19 . The temperature sensor 19 detects the temperature of the upper surface of the heat treatment plate 10 , and outputs a detection signal corresponding to the detected temperature to a temperature acquisition unit 55 , which will be described later.

The heater 11 is constituted by, for example, a mica heater or a Peltier element. A heat generating drive unit 13 is connected to the heater 11 . The heat generating drive unit 13 drives the heater 11 so that, for example, the temperature of the heat treatment plate 10 is maintained at a preset temperature (set temperature) for performing the heat treatment of the substrate W . In addition, the heat generating drive unit 13 drives the heater 11 so that, for example, the temperature of the heat treatment plate 10 rises or falls.

The active cooling plate 20 is disposed at a position below the heat treatment plate 10 and away from the lower surface of the heat treatment plate 10 by a predetermined distance. The active cooling plate 20 has an upper surface facing the heat treatment plate 10 . A heat conductive sheet (not shown) having high heat conductivity is provided on the upper surface of the active cooling plate 20 .

The active cooling plate 20 is provided with a cooling mechanism 21 . The cooling mechanism 21 is constituted by, for example, a cooling water passage or a Peltier element formed in the active cooling plate 20 . A cooling drive unit 22 is connected to the cooling mechanism 21 . The cooling driving unit 22 drives the cooling mechanism 21 so that the temperature of the upper surface of the active cooling plate 20 is lower than the temperature of the heat treatment plate 10 .

The passive cooling plate 30 is supported in a space between the heat treatment plate 10 and the active cooling plate 20 so as to be lifted and lowered by the lifting device 40 (refer to the gray-haired arrow in FIG. 8 ). The passive cooling plate 30 is a metal disk-shaped member, and has an upper surface and a lower surface. The upper surface of the passive cooling plate 30 faces the lower surface of the heat treatment plate 10 , and the lower surface of the passive cooling plate 30 faces the upper surface of the active cooling plate 20 . A heat conductive sheet (not shown) having high heat conductivity is provided on the upper surface of the passive cooling plate 30 .

The raising/lowering device 40 is comprised with an air cylinder, for example. The lift drive unit 41 is connected to the lift device 40 . The raising/lowering drive part 41 drives the raising/lowering device 40 so that the passive cooling plate 30 may contact the active cooling plate 20, for example. In this case, the passive cooling plate 30 is cooled by the active cooling plate 20 . Further, the lifting drive unit 41 drives the lifting device 40 so that the passive cooling plate 30 is in contact with the heat treatment plate 10 , for example. In this case, the heat treatment plate 10 is cooled by the passive cooling plate 30 .

The control device 50 controls the operation of each component of the heat treatment device 100 . The details of the control device 50 will be described later. In addition, in the above-mentioned heat treatment apparatus 100 , the transfer of the substrate W is performed between the heat treatment plate 10 and an external device of the heat treatment apparatus 100 (eg, the substrate transfer apparatus 450 in FIG. 7 ). A water supply mechanism (not shown) is further installed to do so.

The display unit 62 is constituted by, for example, an LCD (liquid crystal display) panel or an organic EL (electroluminescence) panel. The display part 62 displays the setting screen for a user to set the process condition of the heat processing of the board|substrate W as a process recipe. The details of the setting screen will be described later.

The operation unit 61 is, for example, a touch panel integrally provided on the display unit 62 , and is configured to be capable of inputting the contents of a processing recipe on the setting screen displayed on the display unit 62 . In addition, the operation unit 61 is configured to be able to select any one of a plurality of items (a plurality of candidate waveforms to be described later) displayed on the setting screen. In addition, the operation part 61 may include a keyboard, a mouse, etc. instead of or in addition to a touch panel.

(2) Heat treatment of the plurality of substrates W in the heat treatment apparatus 100

In the heat treatment apparatus 100 of FIG. 8, similarly to the example of FIG. 2, the some board|substrate W is heat-processed sequentially at the set temperature according to the content of each heat treatment. As described in the example of FIG. 2 , after the substrate W is placed on the heat treatment plate 10 , if the temperature of the heat treatment plate 10 continues to deviate from the set temperature, the substrate W is treated in advance. The specified heat treatment cannot be accurately performed. Therefore, in the present embodiment, after the unprocessed substrate W is placed on the heat treatment plate 10, the temperature of the heat treatment plate 10 is appropriately returned to the set temperature, and control for stabilizing the heat treatment plate 10 to the set temperature is performed. all.

In this control, the heat treatment apparatus is designed so that the temperature change of the heat treatment plate 10 in a predetermined period from the time when the unprocessed substrate W is placed on the heat treatment plate 10 shows a predetermined appropriate (ideal) waveform. The operation of (100) is adjusted. This waveform corresponds to the reference waveform according to the first embodiment. Hereinafter, the waveform showing the appropriate temperature change of the heat treatment plate 10 in a fixed period from the time when the unprocessed board|substrate W is mounted on the heat treatment plate 10 is called a reference waveform.

The reference waveform is determined according to the type of the substrate W to be subjected to the heat treatment, the purpose of the heat treatment, a set temperature, and the like. Accordingly, even when heat treatment is performed at a common set temperature for the plurality of substrates W, the plurality of reference waveforms respectively corresponding to the plurality of substrates W cannot be said to coincide with each other.

Therefore, in the heat treatment apparatus 100 according to the present embodiment, a plurality of waveforms that can be reference waveforms are stored in the storage unit 51 of FIG. 8 as a plurality of candidate waveforms. One candidate waveform selected by the user from the plurality of candidate waveforms is determined as the reference waveform.

FIG. 9 is a diagram showing an example of a plurality of candidate waveforms stored in the storage unit 51 of FIG. 8 . In the example of FIG. 9 , a plurality of different candidate waveforms A to H are stored in the storage unit 51 of FIG. 8 . In addition, in the example of FIG. 9, a some candidate waveform is associated with each of a some temperature area|region predetermined with respect to a set temperature.

Specifically, two candidate waveforms A and B are associated with a temperature region of 80°C or higher and lower than 110°C. The candidate waveforms A and B have different times until the temperature of the heat treatment plate 10 drops from the set temperature pt and returns to the set temperature pt. Also, the candidate waveforms A and B have different amounts of overshoot with respect to the set temperature pt.

Three candidate waveforms (C, D, E) are associated with a temperature region of 110°C or higher and lower than 130°C. The candidate waveforms C, D and E have different times until the temperature of the heat treatment plate 10 drops from the set temperature pt and returns to the set temperature pt. In addition, the candidate waveforms C, D, and E have different overshoot amounts with respect to the set temperature pt.

Three candidate waveforms (F, G, H) are associated with a temperature region of 130°C or higher and lower than 150°C. The candidate waveforms F, G, and H have different times until the temperature of the heat treatment plate 10 drops from the set temperature pt and returns to the set temperature pt. In addition, the candidate waveforms F, G, and H have different overshoot amounts with respect to the set temperature pt.

In each of the candidate waveforms A to H, the amount of change (reduction amount) of the temperature that falls from the set temperature pt immediately after the substrate W is placed on the heat treatment plate 10 is that the corresponding temperature region is low. The smaller it is, the larger the corresponding temperature range is.

In addition, in this embodiment, for each candidate waveform, the operating condition of the heater 11 for appropriately returning the temperature of the heat treatment plate 10 to the set temperature according to the candidate waveform is the initial operating condition in the storage unit ( 51) is remembered. That is, a plurality of initial operating conditions respectively corresponding to a plurality of candidate waveforms are stored in the storage unit 51 . Accordingly, in the initial stage of the heat treatment of the substrate W, the heater 11 is driven under the initial operating conditions corresponding to the candidate waveform selected as the reference waveform. Each initial operating condition can be calculated|required by simulation, experiment, etc.

FIG. 10 is a diagram showing an example of a plurality of initial operating conditions respectively corresponding to a plurality of candidate waveforms A to H of FIG. 9 . In the present embodiment, each initial operating condition includes a PID control parameter for PID (Proportional Integral Differential) control of the heater 11 based on the detection signal of the temperature sensor 19 in FIG. 8 . In addition, the upper limit parameter indicating the upper limit of the output of the heater 11 is included in each initial operating condition. In Fig. 10, the PID control parameter is denoted as "PID", and the upper limit parameter is denoted as "heater upper limit". The value of the upper limit parameter is expressed, for example, as a ratio (%) of the upper limit of the allowable output with respect to the rated output of the heater 11 .

As shown in FIG. 10 , the initial operating conditions corresponding to the candidate waveform A in FIG. 9 are proportional parameter "0.4", integral parameter "15", differential parameter "3", and upper limit parameter "80 (%)" includes The initial operating conditions corresponding to the candidate waveform B in FIG. 9 include a proportional parameter "0.5", an integral parameter "15", a differential parameter "3", and an upper limit parameter "80 (%)".

In addition, the initial operating conditions corresponding to the candidate waveform C of FIG. 9 include a proportional parameter "0.3", an integral parameter "15", a differential parameter "3", and an upper limit parameter "90 (%)". The initial operating conditions corresponding to the candidate waveform D in FIG. 9 include a proportional parameter "0.5", an integral parameter "15", a differential parameter "3", and an upper limit parameter "90(%)". The initial operating conditions corresponding to the candidate waveform E in FIG. 9 include a proportional parameter "0.2", an integral parameter "15", a differential parameter "3", and an upper limit parameter "90(%)".

In addition, the initial operating conditions corresponding to the candidate waveform F in FIG. 9 include a proportional parameter "0.2", an integral parameter "15", a differential parameter "3", and an upper limit parameter "100 (%)". The initial operating conditions corresponding to the candidate waveform G in FIG. 9 include a proportional parameter "0.5", an integral parameter "15", a differential parameter "3", and an upper limit parameter "100 (%)". The initial operating conditions corresponding to the candidate waveform H in FIG. 9 include a proportional parameter "0.1", an integral parameter "15", a differential parameter "3", and an upper limit parameter "100 (%)".

Here, the treatment recipe to be set in the heat treatment apparatus 100 includes a set temperature and a heat treatment time. The setting screen displayed on the display part 62 of FIG. 8 at the time of setting a process recipe is demonstrated.

11 and 12 are diagrams illustrating an example of a processing recipe setting screen displayed on the display unit 62 of FIG. 8 . On the processing recipe setting screen, a temperature input field 62a, a time input field 62b, and a waveform selection field 62c are displayed.

As shown in FIG. 11 , when the temperature input field 62a, the time input field 62b, and the waveform selection field 62c are blank, the user uses the operation unit 61 of FIG. You can enter the set temperature. In addition, the user may input a desired heat treatment time into the time input field 62b using the operation unit 61 of FIG. 8 . Thereby, the processing recipe which should be used in the heat processing of the board|substrate W is set.

When the processing recipe is set, as shown in Fig. 12, a plurality of candidate waveforms (in this example, candidate waveforms A and B) corresponding to the temperature region to which the set temperature inputted by the user belongs are displayed in the waveform selection field 62c ) is displayed in Therefore, the user can select one of the plurality of candidate waveforms as the reference waveform by using the operation unit 61 of FIG. 8 . At this time, the initial operating condition corresponding to the selected candidate waveform (reference waveform) is read from the storage unit 51 . Thereby, the reference waveform and initial operating condition to be used in the heat processing of the board|substrate W are set.

According to the example of the setting screen of FIGS. 11 and 12, when a set temperature is input to the temperature input field 62a, a plurality of candidate waveforms corresponding to the set temperature are displayed in the waveform selection field 62c. Accordingly, the user can easily grasp a plurality of selectable candidate waveforms according to the set temperature. In addition, the user can easily select one candidate waveform from a plurality of selectable candidate waveforms. Accordingly, an inappropriate candidate waveform is prevented from being determined as the reference waveform.

However, it cannot be said that the set initial operating conditions are appropriate depending on the temperature of the space in which the heat treatment apparatus 100 is installed. In addition, like the later-mentioned substrate processing apparatus provided with the heat processing apparatus 100 of FIG. 8, the case where common heat processing is performed to the some board|substrate W using the some heat processing apparatus 100 is assumed. In this case, individual differences usually exist between the plurality of heat treatment apparatuses 100 . Therefore, when a common initial operation condition is set for the plurality of heat treatment apparatuses 100 , there is a possibility that ideal temperature adjustment cannot be performed in each heat treatment apparatus 100 .

Therefore, in the heat treatment apparatus 100 according to the present embodiment, whenever the heat treatment of the substrate W is performed, the temperature change of the heat treatment plate 10 in a fixed period from the time when the substrate W is placed is set. The initial operating conditions are changed to approximate the reference waveform.

It is assumed that the set temperature is set to 90 DEG C and the candidate waveform B in Fig. 10 is set as the reference waveform. The amount of overshoot occurring in the candidate waveform B is relatively small. For example, when the first substrate W of FIG. 2 is heat-treated with the candidate waveform B as a reference waveform at a set temperature of 90° C., according to the initial operating conditions of FIG. 10 corresponding to the candidate waveform B The heat treatment apparatus 100 operates. In this case, when a large overshoot occurs in the temperature change of the heat treatment plate 10 , the initial operating condition corresponding to the candidate waveform B is changed so that the amount of overshoot becomes small. After that, when the second substrate W is heat-treated at a set temperature of 90° C. with the candidate waveform B as a reference waveform, the heat treatment apparatus 100 operates according to the initial operating conditions after the change. As a result, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 approaches the reference waveform compared to the heat treatment of the first substrate W. Therefore, in the heat treatment of the second substrate W, after the substrate W is placed on the heat treatment plate 10 , the temperature of the heat treatment plate 10 increases when the heat treatment of the first substrate W is performed. It returns to the set temperature appropriately.

In addition, when the second substrate W is heat-treated with the candidate waveform B as the reference waveform at a set temperature of 90° C., if a moderate overshoot occurs in the temperature change of the heat treatment plate 10, the overshoot The initial operating condition corresponding to the candidate waveform B is changed again so that the amount of chute becomes smaller. Thereafter, when the third substrate W is heat-treated at a set temperature of 90° C. with the candidate waveform B as a reference waveform, the heat treatment apparatus 100 operates according to the initial operating conditions after the change. Accordingly, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 approaches the reference waveform compared to the heat treatment of the second substrate W. Therefore, in the heat treatment of the third substrate W, after the substrate W is placed on the heat treatment plate 10 , the temperature of the heat treatment plate 10 increases when the heat treatment of the second substrate W is performed. It returns to the set temperature appropriately.

In the example of FIG. 2 , also for the initial operating conditions corresponding to the set temperatures of 115 ° C. and 140 ° C., as in the example in the case of the set temperature of 90 ° C., whenever the heat treatment of the substrate W is performed, the heat treatment plate 10 The change of the initial operating condition according to the temperature change is performed.

As described above, each time the substrate W is heat-treated, the initial operating condition is changed according to the actual temperature change of the heat treatment plate 10 . In this case, as the heat treatment of the substrate W is repeated, the precision of the heat treatment is improved. In addition, according to the above control, when a common heat treatment is performed on the plurality of substrates W using the plurality of heat treatment apparatuses 100 , the heating of the substrate W between the plurality of heat treatment apparatuses 100 . The occurrence of variations in processing is suppressed. The change of the initial operating condition is performed, for example, in the same manner as in the example of changing the initial operating condition according to the first embodiment described with reference to FIG. 4 .

(3) control device (50)

As shown in FIG. 8 , the control device 50 includes, as functional units, a storage unit 51 , a heat generation control unit 52 , a cooling control unit 53 , an elevation control unit 54 , a temperature acquisition unit 55 , It has a condition change unit 56 , a decision unit 57 , and a display control unit 58 . The control device 50 is constituted by a CPU (Central Processing Unit), a RAM (Random Access Memory), and a ROM (Read Only Memory). When the CPU executes a computer program stored in a ROM or other storage medium, each of the above functional units is realized. In addition, some or all of the functional components of the control apparatus 50 may be implemented by hardware, such as an electronic circuit.

In the control device 50 according to the second embodiment, the storage unit 51 stores a plurality of candidate waveforms and stores a plurality of initial operating conditions respectively corresponding to the plurality of candidate waveforms. Further, the storage unit 51 stores the processing recipe, the reference waveform, and the initial operating condition set by the user, for example, as information to be used in the next heating process. The heat generating control unit 52 responds to the detection signal output from the temperature sensor 19 so as to operate according to the initial operating condition corresponding to the set reference waveform at the beginning of the heat treatment of the substrate W by the heat treatment plate 10 . Based on the control, the heat generating drive unit 13 is controlled. The cooling control unit 53 controls the cooling driving unit 22 to cool the active cooling plate 20 while the power of the heat treatment apparatus 100 is turned on. When lowering the temperature of the heat treatment plate 10 , the elevation control unit 54 controls the elevation device 40 so that the passive cooling plate 30 comes into contact with the heat treatment plate 10 .

In addition, in the control device 50 according to the second embodiment, the temperature acquisition unit 55 acquires the temperature of the heat treatment plate 10 based on the detection signal output from the temperature sensor 19 . More specifically, the temperature acquisition unit 55 acquires a change in temperature by sampling the detection signal output from the temperature sensor 19 at a fixed period. The condition change unit 56 changes the initial operating condition corresponding to one candidate waveform determined as the reference waveform so that the change in temperature acquired by the temperature acquisition unit 55 approaches the set reference waveform.

Moreover, in the control apparatus 50 which concerns on 2nd Embodiment, the display control part 58 makes the display part 62 display the setting screen of a process recipe and a reference waveform. The determination unit 57 determines, as the set temperature, the value of the temperature input by the user on the setting screen at the time of setting the processing recipe. At this time, the display control unit 58 causes a plurality of candidate waveforms corresponding to the temperature region to which the determined set temperature belongs to be selectively displayed on the setting screen. Further, the determination unit 57 determines the candidate waveform selected on the setting screen by the user operating the operation unit 61 as the reference waveform.

In addition, the heat processing apparatus 100 may be comprised so that it is possible to memorize|store a new candidate waveform in the memory|storage part 51 based on operation of the operation part 61 by a user. In addition, the heat processing apparatus 100 may be comprised so that it is possible to make the storage part 51 memorize|store a new initial operation condition based on operation of the operation part 61 by a user.

As described above, each functional unit of the control device 50 of FIG. 8 operates. Thereby, also in the control device 50 according to the second embodiment, the temperature adjustment processing according to the first embodiment described with reference to Figs. 5 and 6 is executed.

(4) Effects of the second embodiment

In the heat treatment apparatus 100 described above, a plurality of candidate waveforms that can be reference waveforms are stored in the storage unit 51 . In addition, a plurality of initial operating conditions respectively corresponding to a plurality of candidate waveforms are stored in the storage unit 51 . One candidate waveform is determined as a reference waveform from a plurality of candidate waveforms stored in the storage unit 51 .

Thereafter, the substrate W is placed on the heat treatment plate 10 , and heat treatment is performed on the placed substrate W . In the initial stage of this heat treatment, the heater 11 operates according to an operating condition corresponding to one candidate waveform determined as a reference waveform for a certain period from the time the substrate W is placed on the heat treatment plate 10 . Also, a change in the temperature of the heat treatment plate 10 is detected. The initial operating condition corresponding to one candidate waveform stored in the storage unit 51 is changed so that the detected change in temperature approaches the reference waveform.

Accordingly, when the plurality of substrates W are sequentially heat-treated, the heater 11 operates according to the initial operating conditions changed during the previous heat treatment at the initial stage of each heat treatment. Thereby, the temperature change of the heat treatment plate 10 immediately after the board|substrate W is mounted on the heat treatment plate 10 approaches a reference waveform compared with the case of the previous heat treatment.

In this way, the temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 is gradually corrected appropriately. Accordingly, the temperature of the heat treatment plate 10 immediately after the substrate W is placed is quickly adjusted to an appropriate temperature for performing the heat treatment of the substrate W.

In addition, according to the above configuration, even when the temperature around the heat treatment apparatus 100 changes, the initial operating conditions are changed according to the temperature change. Therefore, the heat treatment of the substrate W is appropriately performed without being affected by the temperature change around the heat treatment apparatus 100 .

Further, according to the above configuration, one candidate waveform among the plurality of candidate waveforms is determined as a reference waveform indicating an appropriate temperature change of the heat treatment plate 10 immediately after the substrate W is placed on the heat treatment plate 10 . do. As a result of these, it becomes possible to perform the heat processing of the board|substrate W suitably and with high precision.

(5) A substrate processing apparatus including the heat treatment apparatus 100 of FIG. 8 .

The heat treatment apparatus 100 of FIG. 8 according to the second embodiment can be used in the substrate processing apparatus 400 of FIG. 7 , similarly to the heat treatment apparatus 100 of FIG. 1 according to the first embodiment. In this case, the plurality of heat treatment apparatuses 100 of FIG. 8 are installed in the heat treatment unit 440 of FIG. 7 . In each heat treatment apparatus 100, a temperature adjustment process is performed. Thereby, it is possible to perform appropriate heat processing with respect to each of the some board|substrate W with high precision. In addition, even when a common heat treatment is performed on the plurality of substrates W by the plurality of heat treatment apparatuses 100 having individual differences from each other, uniform heat treatment with high precision is performed on the plurality of substrates W. it is possible to do

[3] Third embodiment

Hereinafter, a heat treatment system and a heat treatment method according to a third embodiment will be described with reference to the drawings.

13 is a block diagram showing the configuration of a heat treatment system according to the third embodiment. As shown in FIG. 13 , the heat treatment system 900 includes one or more (three in this example) substrate processing apparatus 400 , line width measuring apparatus 700 , and management apparatus 800 . The three substrate processing apparatuses 400 , the line width measuring apparatus 700 , and the management apparatus 800 are connected to the network 990 so as to be able to communicate with each other.

Each substrate processing apparatus 400 of FIG. 13 has a configuration basically the same as that of the substrate processing apparatus 400 of FIG. 7 . In addition, in the substrate processing apparatus 400 of FIG. 13 , a plurality of the heat treatment apparatuses 100 of FIG. 8 are provided in the heat treatment unit 440 . The line width measuring apparatus 700 measures the line widths of the resist films formed on the plurality of substrates W after processing by the plurality of substrate processing apparatuses 400 , respectively, and outputs the measurement result to the management apparatus 800 .

The management device 800 is, for example, a personal computer, and includes a CPU, a memory, or a microcomputer. The management device 800 includes a storage unit 801 and a waveform update unit 802 as functional units. These functional units are realized when the CPU of the management device 800 executes the computer program stored in the memory. In addition, a part or all of the said structure may be implement|achieved by hardware, such as an electronic circuit.

The storage unit 801 stores a table (hereinafter referred to as a line width waveform table) indicating a predetermined correspondence relationship between the measurement result of the line width by the line width measuring device 700 and a plurality of candidate waveforms. FIG. 14 is a diagram showing an example of a line width waveform table stored in the storage unit 801 of FIG. 13 .

In the linewidth waveform table of FIG. 14, the correspondence relationship between the measurement result of the linewidth and the candidate waveform is prescribed for each predetermined temperature region of FIG. 9 with respect to the set temperature. Here, in the example of FIG. 14, the difference of line|wire width represents the difference of the actual dimension with respect to the design dimension of line|wire width. In addition, let the 1st threshold value be a small value compared with the 2nd threshold value.

According to the linewidth waveform table of FIG. 14, in the temperature range of 80 degreeC or more and less than 110 degreeC, the candidate waveform B of FIG. 9 is matched with the measurement result whose linewidth difference is smaller than a 1st threshold value. In addition, the candidate waveform B of FIG. 9 is corresponded with respect to the measurement result in which the difference of line|wire width is more than a 1st threshold value and smaller than a 2nd threshold value. In addition, the candidate waveform (A) of FIG. 9 is matched with the measurement result in which the difference of line|wire width is more than a 2nd threshold value.

On the other hand, in the temperature range of 110 degreeC or more and less than 130 degreeC, the candidate waveform E of FIG. 9 is matched with the measurement result in which the difference in line|wire width is smaller than a 1st threshold value. Moreover, the candidate waveform D of FIG. 9 is corresponded with respect to the measurement result in which the difference of line|wire width is more than a 1st threshold value, and smaller than a 2nd threshold value. In addition, the candidate waveform C of FIG. 9 is matched with the measurement result in which the difference of line|wire width is more than the 2nd threshold value.

On the other hand, in the temperature range of 130 degreeC or more and less than 150 degreeC, the candidate waveform H of FIG. 9 is corresponded with respect to the measurement result in which the difference in line|wire width is smaller than a 1st threshold value. Moreover, the candidate waveform G of FIG. 9 is corresponded with respect to the measurement result in which the difference of line|wire width is more than a 1st threshold value, and smaller than a 2nd threshold value. In addition, the candidate waveform F of FIG. 9 is corresponded with respect to the measurement result in which the difference of line|wire width is more than 2nd threshold value.

The waveform update unit 802 receives the measurement result output from the linewidth measuring apparatus 700 with respect to the substrate W after processing by one substrate processing apparatus 400 . In this case, the waveform update unit 802 determines candidate waveforms corresponding to the received measurement results for a plurality of temperature regions, respectively, based on the line width waveform table.

Next, the waveform update unit 802 uses the determined candidate waveform as a reference waveform for each predetermined temperature range with respect to the set temperature with respect to the plurality of heat treatment apparatuses 100 included in one substrate processing apparatus 400 . Send the command to be done. Accordingly, in the plurality of heat treatment apparatuses 100 of one substrate processing apparatus 400 , when the set reference waveform is different from the commanded candidate waveform, the commanded candidate waveform is recrystallized as the reference waveform.

For example, it is assumed that in one heat treatment apparatus 100 of one substrate processing apparatus 400, heat treatment at a set temperature of 80° C. is performed using the candidate waveform B in FIG. 9 as a reference waveform. . Here, as a result of measuring the line width of the resist film by the line width measuring apparatus 700 with respect to the substrate W after processing by one substrate processing apparatus 400, it is assumed that the difference in line width is equal to or greater than the second threshold. In this case, according to the linewidth waveform table of Fig. 14, the candidate waveform corresponding to the heat treatment at the set temperature of 80°C becomes the candidate waveform (A). The candidate waveform A is different from the candidate waveform B which is a set reference waveform. As a result, the reference waveform in one heat treatment apparatus 100 is updated from the candidate waveform B to the candidate waveform A.

15 is a flowchart showing an example of a series of processes performed by the waveform update unit 802 in FIG. 13 . The series of processing in FIG. 15 is started when the power supply of the management device 800 is turned on.

As shown in FIG. 15 , the waveform update unit 802 measures the line width of the substrate W after processing by one substrate processing apparatus 400 based on a signal given from the line width measuring apparatus 700 . It is determined whether or not there has been (step S31).

When there is no measurement of the line width, the waveform update unit 802 repeats the process of step S31. On the other hand, if the line width is measured, the waveform update unit 802 calculates a difference in the line width based on the measurement result given from the line width measuring device 700 (step S32).

Next, the waveform update unit 802 determines an appropriate candidate waveform for each predetermined temperature region based on the calculated difference in line width and the line width waveform table stored in the storage unit 801 (step S33).

Next, the waveform update unit 802 transmits the determination result to one substrate processing apparatus 400 (step S34). Further, the waveform update unit 802 gives a command to update the reference waveform to one substrate processing apparatus 400 based on the determination result (step S35).

Thereafter, the waveform update unit 802 determines whether or not line width measurement has been performed on the substrate W after processing by another substrate processing apparatus 400 based on a signal supplied from the line width measuring apparatus 700 . A determination is made (step S36).

When there is no measurement of the line width, the waveform update unit 802 repeats the process of step S36. On the other hand, if the line width is measured, the waveform update unit 802 sets the other substrate processing apparatus 400 as one substrate processing apparatus 400 (step S37), and proceeds to the processing of the above-described step S32.

In the heat treatment system 900 according to the present embodiment, according to the measurement result of the line width of the substrate W after the processing of each substrate processing apparatus 400 , the plurality of heat treatment apparatuses 100 of the substrate processing apparatus 400 . In this case, the set reference waveform is updated to a more appropriate waveform. Thereby, it becomes possible to perform the heat processing of the board|substrate W more appropriately and with high precision.

[4] Another embodiment

(1) Although 1st - 3rd Embodiment demonstrated the heat processing apparatus 100 which has the structure which heats the heat treatment plate 10, and the structure which cools, this invention is not limited to this. The heat treatment device 100 does not need to have a configuration for cooling the heat treatment plate 10 (in the above example, the active cooling plate 20 , the passive cooling plate 30 , and the lifting device 40 ).

(2) In the first to third embodiments, the example in which the heat treatment plate 10 is a metal heat transfer plate has been described. However, the heat treatment plate 10 may be a heat transfer plate made of ceramics. _In this case, aluminum nitride (AlN), alumina (Al2O3), etc. are mentioned as ceramics which form a heat transfer plate _.

(3) In the heat treatment apparatus 100 according to the first embodiment, the upper surface of the heat treatment plate 10 is divided into a plurality of regions, respectively, and a configuration for heating the portion corresponding to each region may be provided. That is, the heater 11 and the heat generating drive unit 13 may be provided for each of the plurality of regions of the heat treatment plate 10 . Alternatively, the heater 11 may be provided for each of the plurality of regions of the heat treatment plate 10 , and the heat generating drive unit 13 may be configured to be able to independently drive the plurality of heaters 11 .

In this case, the storage unit 51 may store initial operating conditions for each of the plurality of regions of the heat treatment plate 10 . In addition, the condition change unit 56 is configured to, for example, a plurality of parameters of initial operating conditions respectively corresponding to at least some areas so that the temperature change of the plurality of areas of the heat treatment plate 10 during the heat treatment becomes close to the reference waveform. may be changed. According to this structure, it becomes possible to perform more detailed temperature adjustment with respect to the some area|region of the upper surface of the heat treatment plate 10. As shown in FIG. Moreover, in this case, it is good also considering the change of the temperature acquired at the time of the heat processing of the board|substrate W with respect to one area|region among several areas|regions as a reference waveform.

(4) In the first to third embodiments, the heat treatment apparatus 100 heats the substrate W, but the heat treatment apparatus 100 is configured to perform only a cooling treatment on the substrate W do. In this case, the heat treatment plate 10 of FIG. 1 is provided with, for example, a cooling mechanism 21 for lowering the temperature of the upper surface of the heat treatment plate 10 instead of the heater 11 .

When the substrate W is subjected to a cooling treatment, the heat treatment plate 10 is maintained at a set temperature lower than that of the substrate W in the initial state. Therefore, when the substrate W is placed on the heat treatment plate 10 at the start of the cooling treatment, the temperature of the heat treatment plate 10 receives heat from the substrate W and rises from the set temperature.

When the cooling mechanism 21 is constituted by a Peltier element, the temperature on the heat treatment plate 10 can be adjusted by controlling the driving state of the Peltier element in the same manner as in the example of the above embodiment. Therefore, in this example, the initial operating conditions are set so that the temperature of the heat treatment plate 10 is quickly lowered to the set temperature.

In this case, the condition change unit 56 determines that the arrival time of the real waveform from the time when the substrate W is placed on the heat treatment plate 10 until the temperature of the heat treatment plate 10 reaches the set temperature is, The initial operating conditions are changed so as to approach the set time of the reference waveform corresponding to the arrival time. Further, the condition change unit 56 changes the initial operating conditions so that the temperature value of the real waveform at a specific time during the cooling process approaches the temperature value of the reference waveform. In addition, the condition change unit 56 changes the initial operating conditions so that the amount of undershoot of the temperature change of the heat treatment plate 10 with respect to the set temperature becomes small.

(5) In the first embodiment, the value of the proportional parameter is changed among the values of the parameters of the PID control for the heater 11 in order to bring the real waveform closer to the reference waveform, but the present invention is not limited thereto. In order to bring the real waveform closer to the reference waveform, the value of the integral parameter among the values of the parameters of the PID control may be changed or the value of the differential parameter may be changed.

(6) In the heat treatment apparatus 100 according to the second and third embodiments, the upper surface of the heat treatment plate 10 is divided into a plurality of regions, respectively, and a configuration for heating the portion corresponding to each region is provided may be That is, the heater 11 and the heat generating drive unit 13 may be provided for each of the plurality of regions of the heat treatment plate 10 . Alternatively, the heater 11 may be provided for each of the plurality of regions of the heat treatment plate 10 , and the heat generating drive unit 13 may be configured to be able to independently drive the plurality of heaters 11 .

In this case, the reference waveform to be used for the heat treatment may be determined for each of the plurality of regions of the heat treatment plate 10 . In addition, the condition change unit 56 is configured to change the initial operating conditions respectively corresponding to at least some of the regions so that, for example, the temperature change of the plurality of regions of the heat treatment plate 10 during the heat treatment approaches the reference waveform determined for each region. A plurality of parameters may be changed. According to this structure, it becomes possible to perform more detailed temperature control with respect to the some area|region of the upper surface of the heat treatment plate 10. As shown in FIG.

(7) In the second and third embodiments, the value of the proportional parameter among the values of the parameters of the PID control for the heater 11 is changed in order to bring the real waveform closer to the reference waveform, but the present invention is not limited to this does not In order to bring the real waveform closer to the reference waveform, the value of the integral parameter among the values of the parameters of the PID control may be changed or the value of the differential parameter may be changed.

(8) In the substrate processing apparatus 400 of FIG. 7 including the heat treatment apparatus 100 according to the second embodiment, the control unit 410 functions as a condition change unit 56 and a decision unit ( 57), a plurality of candidate waveforms in FIG. 9 and a plurality of initial operating conditions in FIG. 10 may be stored.

In this case, the determining unit 57 of the control unit 410 is a reference to be set for each of the plurality of heat treatment apparatuses 100 based on an operation of an operation unit (not shown) installed in the substrate processing apparatus 400 . You may determine the waveform. In addition, the determination unit 57 of the control unit 410 may give each heat treatment apparatus 100 a command to operate under the initial operating condition corresponding to the candidate waveform selected as the reference waveform.

In addition, the condition change unit 56 of the control unit 410 stores in the control unit 410 such that the temperature change obtained by the temperature acquisition unit 55 of the plurality of heat treatment apparatuses 100 approaches the set reference waveform. The initial operating conditions corresponding to the reference waveforms used may be changed.

(9) In the substrate processing apparatus 400 of FIG. 7 including the heat treatment apparatus 100 according to the second embodiment, the control apparatus 50 or the control unit 410 of the plurality of heat treatment apparatuses 100 includes a functional unit The storage unit 801 and the waveform update unit 802 shown in FIG. 13 may be provided as . In this case, for example, based on the measurement result of the line width measuring apparatus 700 installed outside the substrate processing apparatus 400 , updating the reference waveform used for the heat treatment in the plurality of heat treatment apparatuses 100 is performed it becomes possible

(10) In the heat treatment system 900 according to the third embodiment, the management device 800 further includes the condition change unit 56 and the determination unit 57 of FIG. 8 as functional units, and a storage unit ( 801), a plurality of candidate waveforms in FIG. 9 and a plurality of initial operating conditions in FIG. 10 may be stored.

In this case, the determination unit 57 of the management apparatus 800 , based on the operation of an operation unit (not shown) installed in the management apparatus 800 , the plurality of heat treatment apparatuses 100 of the plurality of substrate processing apparatuses 400 . A reference waveform to be set may be determined for each of . In addition, the determination unit 57 of the management device 800 may give each heat treatment device 100 a command to operate under the initial operating condition corresponding to the candidate waveform selected as the reference waveform.

In addition, the condition change unit 56 of the management device 800 is configured such that the change in temperature acquired by the temperature acquisition unit 55 of the plurality of heat treatment apparatuses 100 approaches the set reference waveform, the storage unit 801 . You may change the initial operating condition corresponding to the reference waveform stored in .

(11) In the example of Fig. 10, a plurality of initial operating conditions respectively corresponding to a plurality of candidate waveforms are different from each other, but a part or all of the plurality of initial operating conditions may be in common.

(12) In the heat treatment system 900 according to the third embodiment, as a configuration for acquiring processing information regarding the substrate W subjected to heat treatment in each heat treatment apparatus 100 , the line width for measuring the line width of the resist film Although a measuring device 700 is used, the present invention is not limited thereto.

As a configuration for acquiring processing information regarding the substrate W subjected to heat treatment, instead of the line width measuring device 700 , an apparatus for measuring the thickness of a resist film formed on the substrate W, or on the substrate W An apparatus for counting the number of defects formed may be used. In these cases, a table representing a predetermined relationship between the thickness of the resist film or the number of defects and a plurality of candidate waveforms is stored in the storage unit 801 . Thereby, based on the thickness of the resist film or the number of defects, and the table stored in the storage unit 801 , the reference waveform set in the heat treatment apparatus 100 can be updated to a more appropriate waveform.

[5] Correspondence between each element in the claims and each element in the embodiment

Hereinafter, examples of correspondence between each constituent element of the claims and each element of the embodiment will be described. In the first embodiment, the heat treatment device 100 is an example of the heat treatment device, the heat treatment plate 10 is an example of a plate member, the heater 11 and the heat generating drive unit 13 are examples of the heat treatment section, and the initial operating conditions are It is an example of an operating condition, the storage unit 51 is an example of the storage unit, the heat generation control unit 52 is an example of the operation control unit, the temperature sensor 19 is an example of a temperature detector, and the temperature acquisition unit 55 and the condition change A section 56 is an example of a condition change section.

In the second and third embodiments, the heat treatment device 100 is an example of the heat treatment device, the heat treatment plate 10 is an example of a plate member, the heater 11 and the heat generating drive unit 13 are examples of the heat treatment section, and the initial The operating condition is an example of the operating condition, the storage unit 51 is an example of the first storage unit, the temperature sensor 19 is an example of the temperature detector, and the determination unit 57 is an example of the determination unit.

In the second and third embodiments, the heat generation control unit 52 is an example of the operation control unit, the temperature acquisition unit 55 and the condition change unit 56 are examples of the condition change unit, and the operation unit 61 is an example of the operation unit. example, the display unit 62 is an example of the display unit, and the display control unit 58 is an example of the display control unit.

In the second and third embodiments, the line width measuring device 700 is an example of the information acquisition unit, the storage unit 801 is an example of the second storage unit, and the waveform update unit 802 is an example of the waveform update unit, Thermal treatment system 900 is an example of a thermal treatment system.

As each component of the claim, various other elements having the structure or function described in the claim may be used.

Claims (21)

A heat treatment apparatus for sequentially performing heat treatment on a plurality of substrates,
a plate member on which the plurality of substrates are sequentially mounted;
a heat treatment unit for performing heat treatment through the plate member on the substrate mounted on the plate member;
a storage unit for storing operating conditions of the heat treatment unit for a predetermined period from the time the substrate is placed on the plate member;
an operation control unit for operating the heat treatment unit according to the operating conditions stored in the storage unit;
a temperature detector for detecting the temperature of the plate member;
Each time a substrate is placed on the plate member, the operating condition stored in the storage unit such that a change in temperature detected by the temperature detector approaches a predetermined reference waveform when the heat treatment unit operates according to the operating condition. A heat treatment apparatus comprising a condition change unit for changing the The method according to claim 1,
The operating condition includes values of one or a plurality of control parameters,
and the condition change unit changes at least one value of the one or a plurality of control parameters stored in the storage unit so that the detected change in temperature approaches the reference waveform. 3. The method according to claim 2,
The heat treatment unit is configured to enable PID control,
The one or more control parameters may include at least one of a proportional parameter, an integral parameter, and a differential parameter of the PID control for returning a temperature of the plate member to a processing temperature for processing the substrate from the time the substrate is placed on the plate member. A heat treatment apparatus comprising one. 4. The method according to claim 2 or 3,
The one or more control parameters include an upper limit of an output of the heat treatment unit. 4. The method according to any one of claims 1 to 3,
The condition change unit is configured to operate such that the arrival time from the time when the substrate is placed on the plate member to the time when the temperature detected by the temperature detector returns to the processing temperature for processing the substrate approaches a preset time. A heat treatment apparatus for changing conditions. 4. The method according to any one of claims 1 to 3,
The condition change unit may include: a value of the temperature detected by the temperature detector at a specific time within the predetermined period from a time when the substrate is placed on the plate member is a temperature value of a portion of the reference waveform corresponding to the specific time A heat treatment apparatus for changing the operating conditions so as to approach 4. The method according to any one of claims 1 to 3,
The heat treatment apparatus, wherein the condition change unit changes the operating conditions so that an amount of overshoot or an amount of undershoot with respect to a set temperature for performing heat treatment on a substrate, generated in a waveform of the detected temperature, becomes smaller. A heat treatment apparatus for sequentially performing heat treatment on a plurality of substrates,
a plate member on which the plurality of substrates are sequentially mounted;
a heat treatment unit for performing heat treatment through the plate member on the substrate mounted on the plate member;
A plurality of candidate waveforms representing virtual temperature changes of the plate member in a predetermined period from the time the substrate is placed on the plate member are stored, and a plurality of operations of the heat treatment unit corresponding to the plurality of candidate waveforms, respectively a first storage unit for storing conditions;
a temperature detector for detecting the temperature of the plate member;
a determining unit that determines one candidate waveform as a reference waveform from the plurality of candidate waveforms stored in the first storage unit;
an operation control unit for operating the heat treatment unit according to an operating condition corresponding to the one candidate waveform determined as the reference waveform among a plurality of operating conditions stored in the first storage unit;
Each time a substrate is placed on the plate member, the second waveform is such that a change in temperature detected by the temperature detector approaches the reference waveform when the heat treatment unit operates according to an operating condition corresponding to the one candidate waveform. 1 A heat treatment apparatus comprising: a condition change unit for changing an operating condition corresponding to the one candidate waveform stored in a storage unit; 9. The method of claim 8,
and an operation unit operated by a user to select one candidate waveform from a plurality of candidate waveforms stored in the first storage unit;
The heat treatment apparatus, wherein the determination unit determines, as the reference waveform, one candidate waveform selected by the operation unit from the plurality of candidate waveforms stored in the first storage unit in response to an operation of the operation unit by a user. 10. The method of claim 9,
and a display control unit for selectively displaying at least a portion of the plurality of candidate waveforms on a display unit. 11. The method of claim 10,
the plurality of candidate waveforms stored in the first storage unit includes a plurality of candidate waveform groups respectively corresponding to a plurality of temperature regions;
The determining unit is configured to be able to determine a temperature for performing heat treatment on the substrate as a set temperature,
wherein the display control unit causes the display unit to selectably display a plurality of candidate waveforms of a candidate waveform group corresponding to a temperature region to which the determined processing temperature belongs, when the set temperature is determined by the determination unit. 12. The method according to any one of claims 8 to 11,
each of the plurality of operating conditions stored in the first storage unit includes a value of one or a plurality of control parameters;
The condition change unit may include at least one value of one or a plurality of control parameters of an operating condition corresponding to the one candidate waveform stored in the first storage unit so that the detected temperature change approaches the reference waveform. Modified, heat treatment device. The heat treatment apparatus according to claim 8;
an information acquisition unit configured to acquire processing information regarding a substrate subjected to heat treatment by the heat treatment apparatus;
a second storage unit for storing a predetermined correspondence relationship between the processing information and the plurality of candidate waveforms;
A reference waveform is updated so that a candidate waveform corresponding to the process information acquired by the information acquisition unit becomes a reference waveform based on the correspondence relationship stored in the second storage unit and the processing information acquired by the information acquisition unit. A heat treatment system comprising a waveform update unit that A heat treatment method for sequentially performing heat treatment on a plurality of substrates, comprising:
sequentially placing the plurality of substrates on a plate member;
performing heat treatment by a heat treatment unit through the plate member on the mounted substrate;
storing in a storage unit the operating conditions of the heat treatment unit for a certain period from the time the substrate is placed on the plate member;
operating the heat treatment unit according to the operating conditions stored in the storage unit;
detecting the temperature of the plate member by a temperature detector;
Each time a substrate is placed on the plate member, the operating condition stored in the storage unit such that a change in temperature detected by the temperature detector approaches a predetermined reference waveform when the heat treatment unit operates according to the operating condition. Including the step of changing the, heat treatment method. 15. The method of claim 14,
The operating condition includes values of one or a plurality of control parameters,
The step of changing the operating condition includes changing a value of at least one of the one or a plurality of control parameters stored in the storage unit so that the change in the detected temperature approaches the reference waveform. . A heat treatment method for sequentially performing heat treatment on a plurality of substrates, comprising:
sequentially placing the plurality of substrates on a plate member;
performing heat treatment by a heat treatment unit through the plate member on the mounted substrate;
A plurality of candidate waveforms representing virtual temperature changes of the plate member in a predetermined period from the time the substrate is placed on the plate member are stored, and a plurality of operations of the heat treatment unit corresponding to the plurality of candidate waveforms, respectively storing the condition in a first storage unit;
detecting the temperature of the plate member by a temperature detector;
determining one candidate waveform as a reference waveform from a plurality of candidate waveforms stored in the first storage unit;
operating the heat treatment unit according to an operating condition corresponding to the one candidate waveform determined as the reference waveform among a plurality of operating conditions stored in the first storage unit;
Each time a substrate is placed on the plate member, the second waveform is such that a change in temperature detected by the temperature detector approaches the reference waveform when the heat treatment unit operates according to an operating condition corresponding to the one candidate waveform. 1 A heat treatment method comprising the step of changing an operating condition corresponding to the one candidate waveform stored in a storage unit. 17. The method of claim 16,
The step of determining the one candidate waveform as the reference waveform includes: selecting one candidate waveform selected by the operation unit from the plurality of candidate waveforms stored in the first storage unit in response to an operation of the operation unit by the user as the reference waveform A method of heat treatment comprising determining as 18. The method of claim 17,
The method further comprising the step of displaying at least a portion of the plurality of candidate waveforms in a selectable display unit. 19. The method of claim 18,
the plurality of candidate waveforms stored in the first storage unit includes a plurality of candidate waveform groups respectively corresponding to a plurality of temperature regions;
The heat treatment method is
Further comprising the step of determining a temperature for performing a heat treatment on the substrate as a set temperature,
The step of selectively displaying at least a part of the plurality of candidate waveforms on the display unit may include selecting a plurality of candidate waveforms from the candidate waveform group corresponding to a temperature region to which the determined processing temperature belongs when the set temperature is determined. A heat treatment method comprising displaying on a display unit. 20. The method according to any one of claims 16 to 19,
each of the plurality of operating conditions stored in the first storage unit includes a value of one or a plurality of control parameters;
The changing of the operating condition corresponding to the one candidate waveform includes one of the operating conditions corresponding to the one candidate waveform stored in the first storage unit so that the detected change in temperature approaches the reference waveform. or changing a value of at least one of the plurality of control parameters. 20. The method according to any one of claims 16 to 19,
acquiring processing information regarding the substrate on which the heat treatment has been performed;
storing a predetermined correspondence relationship between the processing information and the plurality of candidate waveforms in a second storage unit;
The method further includes a step of updating a reference waveform so that a candidate waveform corresponding to the acquired processing information becomes a reference waveform based on the correspondence relationship stored in the second storage unit and the processing information acquired by the acquiring step; , the heat treatment method.

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