TWI752698B - 帶狀射束電漿增強化學氣相沉積系統及操作其的方法 - Google Patents

帶狀射束電漿增強化學氣相沉積系統及操作其的方法 Download PDF

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TWI752698B
TWI752698B TW109137735A TW109137735A TWI752698B TW I752698 B TWI752698 B TW I752698B TW 109137735 A TW109137735 A TW 109137735A TW 109137735 A TW109137735 A TW 109137735A TW I752698 B TWI752698 B TW I752698B
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plasma
chamber
ribbon beam
vapor deposition
chemical vapor
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TW202124770A (zh
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約翰 哈塔拉
崔斯坦 馬
彼得Ｆ 庫魯尼西
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美商應用材料股份有限公司
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Abstract

一種帶狀射束電漿增強化學氣相沉積(PECVD)系統及 操作其的方法。帶狀射束電漿增強化學氣相沉積(PECVD)系統包括：處理腔室，含有用於支撐基板的壓板；以及電漿源，鄰近於處理腔室設置且用於在電漿腔室中產生自由基，電漿腔室具有與其相關聯的孔口以允許自由基的射束離開電漿腔室，其中處理腔室維持在第一壓力且電漿腔室維持在大於第一壓力的第二壓力，以用於將自由基從電漿腔室驅動到處理腔室中。

Description

帶狀射束電漿增強化學氣相沉積系統及操作其 的方法
本發明的實施例實質上有關半導體裝置製造的領域，且更確切地說，有關能夠以方向特定的方式相對於目標基板的表面以傾斜角度沉積薄膜的電漿增強化學氣相沉積系統。
相關申請的交叉引用
本申請主張2019年12月18日申請的美國臨時專利申請第62/949,582號的權益，所述專利申請以全文引用的方式併入本文中。
電漿增強化學氣相沉積(plasma enhanced chemical vapor deposition；PECVD)是用於在基板(例如，矽晶圓)上沉積薄膜的相對低溫的化學氣相沉積製程。習知PECVD製程有關在處理腔室中通過向低壓進料氣體(例如，矽烷、甲烷等)施加高頻率電壓來點燃電漿。電漿含有呈基態和激發態的離子化氣體物質、電 子以及中性物質。在電漿內，電子與氣體分子之間發生非彈性碰撞，從而形成反應性物質，例如受激發的中性物質和自由基以及離子和電子。反應性物質與設置在處理腔室內的目標基板的表面發生化學反應，從而在所述表面上形成薄膜。
在習知PECVD製程中，電漿的自由基通常以方向非特定的各向同性方式分佈在目標基板的暴露表面上，使得在基板上形成具有均勻厚度的薄膜。一些應用需要這種類型的均勻沉積。在其它應用中，需要方向特定的各向異性沉積。舉例來說，為了在基板的表面特徵(例如，溝槽、鰭等)的特定側面及/或部分上沉積薄膜同時保持此些表面特徵的其它側面及/或部分沒有此類沉積，可能需要相對於基板的表面以特定傾斜角度將反應性物質導向基板。迄今為止，使用習知PECVD系統尚未能實現以此方式在基板上方向性地沉積薄膜。
就這些和其它考慮來說，當前改進可為有用的。
提供此發明內容以按簡化形式引入下文在具體實施方式中進一步描述的概念選擇。此發明內容並不意圖識別所要求主題的關鍵特徵或基本特徵，且也不意圖用於輔助確定所要求主題的範圍。
根據本發明的帶狀射束電漿增強化學氣相沉積(PECVD)系統的示範性實施例可包含：處理腔室，含有用於支撐基板的壓 板；以及電漿源，鄰近於所述處理腔室設置且用於在電漿腔室中產生自由基，所述電漿腔室具有與其相關聯的孔口以允許所述自由基的射束離開所述電漿腔室，其中所述處理腔室維持在第一壓力且所述電漿腔室維持在大於所述第一壓力的第二壓力，以用於將所述自由基從所述電漿腔室驅動到所述處理腔室中。
根據本發明的帶狀射束PECVD系統的另一示範性實施例可包含：處理腔室，含有用於支撐基板的壓板；以及電漿源，鄰近於所述處理腔室設置且用於從供應到電漿腔室的氣體物質產生自由基，所述電漿腔室具有與其相關聯的孔口以允許所述自由基的射束離開所述電漿腔室，其中所述處理腔室維持在介於10-6托到10-2托範圍內的第一壓力，且所述電漿腔室維持在介於1毫托到1托範圍內的第二壓力，且其中所述壓板以及所述電漿腔室中的至少一者能夠進行移動以及旋轉中的至少一者以相對於所述壓板的表面以傾斜角度將所述射束導向所述壓板。
一種操作帶狀射束PECVD系統的示範性方法，所述PECVD系統包含含有用於支撐基板的壓板的處理腔室以及鄰近於所述處理腔室設置的電漿源，所述方法包含：將氣體物質從氣體源供應到所述電漿源的電漿腔室中；在所述電漿腔室中點燃所述氣體物質以產生高能電漿；以及在所述電漿腔室與所述處理腔室之間建立壓力差，以經由與所述電漿腔室相關聯的孔口提取含有所述電漿的自由基的準直帶狀射束，其中所述準直帶狀射束被導向所述基板。
10:帶狀射束電漿增強化學氣相沉積系統/系統
12:電漿源
14:處理腔室
16:電漿
18:電漿腔室
20:噴嘴
22:壓板
24:基板
30:氣體源
32:帶狀射束
34a、34b:電極
36:RF發生器
38:RF匹配網路
40:初級孔口
42:橫向構件
46:屏障
48:次級孔口
50、52、54:箭頭
62:薄膜
64:圖案化特徵
70:偏壓電源
1000、1100、1200、1300、1400、1500、1600:方框
通過舉例，現將參考附圖來描述所公開技術的各種實施例，其中：圖1是示出根據本發明的示範性實施例的帶狀射束電漿增強化學氣相沉積(PECVD)系統的示意性橫截面視圖。
圖2A和2B是示出圖1中所繪示的帶狀射束PECVD系統的噴嘴的一實施例的透視橫截面詳細視圖。
圖3A和3B是示出圖1中所繪示的帶狀射束PECVD系統的噴嘴的另一實施例的透視橫截面詳細視圖。
圖4是示出圖1中所繪示的帶狀射束PECVD系統的替代實施例的示意性橫截面視圖，所述替代實施例包含用於改進帶狀射束準直的次級孔口。
圖5是示出如通過圖1中所繪示的帶狀射束PECVD系統所產生的薄膜在一組圖案化特徵上的方向性沉積的側視圖。
圖6是示出根據本發明的示範性實施例的操作PECVD系統的方法的流程圖。
現將在下文參考附圖更充分地描述本發明的實施例，附圖中繪示了一些實施例。本發明的主題可以許多不同形式體現且 不應解釋為限於本文中所闡述的實施例。提供這些實施例是為了使得本發明將是透徹且完整的，且這些實施例將把主題的某些示範性方面傳達給所屬領域的技術人員。在圖式中，相同標號始終指代相同元件。
參看圖1A，其繪示示出根據本發明的示範性實施例的帶狀射束電漿增強化學氣相沉積系統10(下文簡稱“系統10”)的示意性橫截面視圖。系統10可實質上包含鄰近於處理腔室14設置的電漿源12。電漿源12可用於在電漿腔室18中產生高能電漿16且發射所述電漿16(例如，經由電漿腔室18的噴嘴20)，如下文進一步描述。雖然將電漿腔室18描繪為一般圓柱形狀，但本發明在此方面不受限制，且電漿腔室18可以各種改變的形狀和配置實施。
處理腔室14可含有用於支撐基板24(例如，矽晶圓)的壓板22，所述壓板與電漿腔室18的噴嘴20成面對關係。在各種實施例中，壓板22可用於強制保持基板24，例如經由靜電夾持或機械夾持。另外，壓板22可包含用於以可控方式將基板24加熱至所需溫度(例如，介於室溫與450攝氏度之間的範圍內的溫度)以增強沉積製程的加熱元件(未繪示)。
系統10的電漿源12可被配置成從通過一或多個氣體源30供應到電漿腔室18的氣體物質產生電漿16。所述氣體物質可包含矽烷(SiH4)、甲烷(CH4)、氨氣(NH3)、氧氣(O2)、氮氣(N2)、四氯化矽(SiCl4)、鍺烷(GeH4)、氬氣(Ar)、六氟化鎢 (WF6)等中的一或多者。本發明在此方面不受限制。電漿16(且確切地說，電漿內的自由基)可以帶狀射束32的形式經由噴嘴20投射導向基板24，如下文進一步描述。在各種實施例中，電漿源12可以是射頻(radio frequency；RF)電漿源(例如，感應耦合電漿(inductively-coupled plasma；ICP)源、電容耦合電漿(capacitively coupled plasma；CCP)源、螺旋波源、電子迴旋共振(electron cyclotron resonance；ECR)源等)。舉例來說，電漿源12可包含用於以所屬領域的一般技術人員所熟知的方式點燃且維持電漿16的電極34a、電極34b、RF發生器36以及RF匹配網路38。本發明在此方面不受限制。
在電漿腔室18中產生的電漿16可含有離子化氣體物質(離子)、電子、受激發的中性物質以及自由基。在習知電漿增強化學氣相沉積(PECVD)系統中，基板與電漿位於同一腔室中，且電漿內的自由基以方向非特定的各向同性方式分佈在基板的表面上，從而在基板的暴露表面上形成具有一般均勻厚度的薄膜。相對來說，系統10的電漿腔室18與安放壓板22和基板24的處理腔室14分離，且含有電漿16的自由基的準直帶狀射束32從電漿腔室18中被提取出並且以方向特定的各向異性方式導向基板24。這可通過在電漿腔室18與處理腔室14之間建立壓力差，且通過對提取離子射束進行準直來實現。在非限制性實例中，離子射束可經由具有細長輪廓的噴嘴20提取(下文更詳細描述)。在壓力差方面，處理腔室14可維持在第一壓力，且電漿腔室18可 維持在高於第一壓力的第二壓力。在不同實例中，處理腔室中的第一壓力可介於10-6托到10-2托範圍內，且電漿腔室18中的第二壓力可介於1毫托到1托範圍內。本發明在此方面不受限制。因此，電漿腔室18與處理腔室14之間的壓力差可提供用於將電漿16中的自由基以帶狀射束32的形式從電漿腔室18驅動到處理腔室14中的動力。
帶狀射束32可使用各種結構、裝置以及技術而獲得其形狀且可被準直。在一個實例中，帶狀射束32可通過電漿腔室18的細長較小輪廓噴嘴20而獲得其形狀且可被準直。圖2A和2B中所繪示的等角橫截面視圖更詳細地示出噴嘴20。如所描繪，噴嘴20可界定孔口40，所述孔口具有在平行於所示出的笛卡爾坐標系(Cartesian coordinate system)的X軸(且平行於電漿腔室18的縱向軸線)的方向上測量的寬度，且具有在平行於所示出的笛卡爾坐標系的Y軸的方向上測量的高度。在各種實施例中，孔口40的寬度相對於孔口40的高度的寬高比可介於12：1到60：1範圍內。在特定實例中，孔口40可具有300毫米的寬度和介於5毫米到25毫米範圍內的高度。本發明在此方面不受限制。
噴嘴20可從電漿腔室18徑向延伸，因此使得孔口40具有如在平行於所示出的笛卡爾坐標系的Z軸的方向上測量的深度。在各種實施例中，孔口40可具有介於7毫米到20毫米範圍內的深度。在一特定實施例中，孔口40可具有10毫米的深度。本發明在此方面不受限制。因此，在徑向方向上細長的噴嘴20可 以帶狀射束32的形式彙集或引導離開電漿腔室18的自由基，且可傾向於使自由基準直並且促成自由基的較長平均自由路徑，其中自由基(且通常帶狀射束32)原本可傾向於在離開電漿腔室18之後發散開。因此帶狀射束32的預期方向性可在用於在基板24上選擇性沉積薄膜時保留。在各種實施例中，可省略噴嘴20，且電漿腔室18可具有在其側壁中形成的提取孔口。本發明在此方面不受限制。
參看圖3A和3B，其繪示噴嘴20的一替代實施例，其中噴嘴20包含在孔口40的寬度上以平行間隔關係設置的多個垂直定向的橫向構件42。相對於圖2A和2B中所繪示的噴嘴20的實施例，橫向構件42可進一步促進對離開電漿腔室18的自由基的彙集和引導。參看圖4，其繪示系統10的一替代實施例，其中界定次級孔口48的屏障46設置在電漿腔室18與基板24之間，其中次級孔口48位於帶狀射束32的路徑中。次級孔口48可操作以使帶狀射束32在相比於孔口40(在下文中也被稱為“初級孔口40”)更接近基板24的位置處進一步準直或“再次準直”，由此相對於圖1中所繪示的系統10的實施例改進帶狀射束32的準直。
返回參看圖1，壓板22可旋轉和移動以相對於電漿腔室18樞轉和掃描基板24，如由箭頭50和箭頭52所指示。另外或可替代地，電漿腔室18可圍繞其長軸旋轉，如由箭頭54所指示。因此，準直的含有自由基的帶狀射束32可以高度方向性的各向異性方式以各種傾斜角度投射到基板24上，以在基板24的表面特 徵(例如，溝槽、鰭等)的特定側面及/或部分上沉積薄膜同時保持此些表面特徵的其它側面及/或部分沒有此類沉積。在非限制性實例中，壓板22及/或電漿腔室18的移動及/或旋轉可促成相對於壓板22的表面以介於30度到80度範圍內的角度將帶狀射束32投射到基板24上，其中角度在+/- 5度到+/- 30度的範圍內擴展。
舉例來說，圖5描繪薄膜62在一組圖案化特徵64(例如，鰭、齒形結構等)上的方向性沉積，其中通過將帶狀射束32從圖的右上方導向圖案化特徵64而剛好將薄膜62沉積在圖案化特徵64的右側壁和上表面上。圖案化特徵64的左側壁和圖案化特徵64之間的底面由於被圖案化特徵64的右側壁和上表面遮擋/遮蔽，因而保持沒有沉積。
在各種實施例中，系統10可更包含耦合到電漿腔室18和處理腔室14的偏壓電源70。偏壓電源70可選擇性地在電漿腔室18與基板24之間施加電壓差以經由噴嘴20從電漿腔室18提取離子，從而形成富含自由基和富含離子的帶狀射束32。帶狀射束32中的離子可增加基板表面相對於帶狀射束32中的自由基的親和力，由此增強薄膜沉積。在各種實施例中，系統10可以“離子射束模式”和“自由基模式”操作，在離子射束模式中，啟用/實施偏壓電源70來從電漿腔室18提取離子且提供富含離子的帶狀射束32，在自由基模式中，停用或不使用偏壓電源70來從電漿腔室18提取離子，從而產生富含自由基但不富含離子的帶狀射束。
參看圖6，其繪示示出根據本發明的用於操作上述系統 10的示範性方法的流程圖。現將結合圖1至圖4中所繪示的系統10的圖示來描述所述方法。
在示範性方法的方框1000處，可將氣體物質從氣體源30供應到電漿腔室18。所述氣體物質可包含SiH4、CH4、NH3、O2、N2、SiCl4、GeH4、Ar、WF6等中的一或多者。本發明在此方面不受限制。在所述方法的方框1100處，可點燃電漿腔室18中的氣體物質以產生高能電漿16。
在示範性方法的方框1200處，可在電漿腔室18與處理腔室14之間建立壓力差以從電漿腔室18提取含有自由基的準直帶狀射束32，其中所述準直帶狀射束32被導向設置在處理腔室14內的壓板22上的基板24。舉例來說，處理腔室14可維持在第一壓力，且電漿腔室18可維持在高於第一壓力的第二壓力。在不同實例中，處理腔室中的第一壓力可介於10-6托到10-2托範圍內，且電漿腔室18中的第二壓力可介於1毫托到1托範圍內。本發明在此方面不受限制。
在示範性方法的方框1300處，含有自由基的帶狀射束32可被準直且導向基板24。在非限制性實例中，可經由在徑向方向上細長的噴嘴20提取含有自由基的帶狀射束32。噴嘴20可具有細長輪廓，且可界定孔口40，所述孔口具有在平行於所示出的笛卡爾坐標系(繪示於圖2B中)的X軸(且平行於電漿腔室18的縱向軸線)的方向上測量的寬度，且具有在平行於所示出的笛卡爾坐標系的Y軸的方向上測量的高度。在各種實施例中，孔口40 的寬度相對於孔口40的高度的寬高比可介於12：1到60：1範圍內。在特定實例中，孔口40可具有300毫米的寬度和介於5毫米到25毫米範圍內的高度。本發明在此方面不受限制。孔口40可具有如在平行於所示出的笛卡爾坐標系的Z軸的方向上測量的深度。在各種實施例中，孔口40可具有介於7毫米到20毫米範圍內的深度。在一特定實施例中，孔口40可具有10毫米的深度。本發明在此方面不受限制。因此，在徑向方向上細長的噴嘴20可以帶狀射束32的形式彙集或引導離開電漿腔室18的自由基，且可傾向於使自由基準直並且促成自由基的較長平均自由路徑，其中自由基(且通常帶狀射束32)原本可傾向於在離開電漿腔室18之後發散開。因此帶狀射束32的預期方向性可在用於在基板24上選擇性沉積薄膜時保留。
在各種實施例中，噴嘴20可具備在孔口40的寬度上以平行間隔關係設置的多個垂直定向的橫向構件42，從而進一步促進對離開電漿腔室18的自由基的彙集和引導。在各種實施例中，界定次級孔口48的屏障46可設置在電漿腔室18與基板24之間，其中次級孔口48位於帶狀射束32的路徑中。次級孔口48可操作以引導帶狀射束32且使帶狀射束32在相比於孔口40(在下文中也被稱為“初級孔口40”)更接近基板24的位置處進一步準直或“再次準直”，由此改進帶狀射束32的準直。
在示範性方法的方框1400處，可旋轉及/或移動壓板22以相對於電漿腔室18樞轉及/或掃描基板24，如由圖1中的箭頭 50和箭頭52所指示。另外或可替代地，電漿腔室18可圍繞其長軸旋轉，如由箭頭54所指示。因此，準直的含有自由基的帶狀射束32可以高度方向性的各向異性方式以各種傾斜角度投射到基板24上，以在基板24的表面特徵(例如，溝槽、鰭等)的特定側面及/或部分上沉積薄膜同時保持此些表面特徵的其它側面及/或部分沒有此類沉積。
在示範性方法的方框1500處，系統10可以“離子射束”模式操作，其通過啟用偏壓電源70來從電漿腔室18提取離子，從而提供富含離子的帶狀射束32。在所述方法的方框1600處，系統10可以“自由基模式”操作，其通過停用(或不啟用)偏壓電源70來產生富含自由基但不富含離子的帶狀射束。
所屬領域的一般技術人員將瞭解由上文所描述的系統10和對應方法所提供的眾多優勢。第一優勢為促進在目標基板上進行方向特定的各向異性沉積的能力(例如，相對於基板的表面以特定傾斜角度進行沉積以在表面特徵的特定側面及/或部分上沉積薄膜，同時保持此些表面特徵的其它側面及/或部分沒有此類沉積)。本發明的系統10和對應方法所提供的第二優勢為在目標基板上以“離子射束”模式或“自由基模式”選擇性地進行方向特定的各向異性沉積的能力，離子射束模式通過啟用偏壓電源70來從電漿腔室18提取離子，從而提供富含離子的帶狀射束32，自由基模式通過停用(或不啟用)偏壓電源70來產生富含自由基但不富含離子的帶狀射束。
本發明的範圍不受本文所描述的特定實施例限制。實際上，除本文所描述的那些實施例和修改之外，所屬領域的一般技術人員根據前述描述和附圖將顯而易知本發明的其它各種實施例和對本發明的修改。因此，此類其它實施例和修改意圖屬於本發明的範圍。此外，雖然已在用於特定目的的特定環境中在特定實施方案的上下文中描述本發明，但所屬領域的一般技術人員將認識到其實用性不限於此。本發明的實施例可有利地實施於用於任何數目個目的的任何數目個環境中。因此，應鑒於如本文所描述的本發明的整個廣度和精神來解釋下文所闡述的申請專利範圍。
10:帶狀射束電漿增強化學氣相沉積系統
12:電漿源
14:處理腔室
16:電漿
18:電漿腔室
20:噴嘴
22:壓板
24:基板
30:氣體源
32:帶狀射束
34a、34b:電極
36:RF發生器
38:RF匹配網路
40:初級孔口
50、52、54:箭頭
70:偏壓電源

Claims (18)

  1. 一種帶狀射束電漿增強化學氣相沉積系統，包括：處理腔室，含有用於支撐基板的壓板；以及電漿源，鄰近於所述處理腔室設置且用於在電漿腔室中產生自由基，所述電漿腔室具有與其相關聯的孔口以允許所述自由基的射束離開所述電漿腔室；其中所述處理腔室維持在第一壓力且所述電漿腔室維持在大於所述第一壓力的第二壓力，以用於將所述自由基從所述電漿腔室驅動到所述處理腔室中；以及其中所述孔口由從所述電漿腔室延伸的細長噴嘴界定以用於使所述射束準直，所述孔口的寬度相對於所述孔口的高度的寬高比介於12：1到60：1範圍內，且所述孔口具有介於7毫米到20毫米範圍內的深度。
  2. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，其中所述電漿腔室能夠旋轉以相對於所述壓板的表面以傾斜角度將所述射束導向所述壓板。
  3. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，其中所述處理腔室能夠進行旋轉以及移動中的至少一者以相對於所述壓板的表面以傾斜角度將所述射束導向所述壓板。
  4. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，其中所述噴嘴包含在所述孔口的寬度上以平行間隔關係設置的多個橫向構件。
  5. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，其中所述處理腔室中的所述第一壓力介於10-6托到10-2托範圍內，且所述電漿腔室中的所述第二壓力介於1毫托到1托範圍內。
  6. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，其中所述電漿源被配置成從通過氣體源供應到所述電漿腔室的氣體物質產生電漿。
  7. 如請求項6所述的帶狀射束電漿增強化學氣相沉積系統，其中所述氣體物質包含矽烷、甲烷、氨氣、氧氣、氮氣、四氯化矽、鍺烷、氬氣以及六氟化鎢中的至少一者。
  8. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，其中所述孔口為初級孔口，所述系統更包括屏障，所述屏障設置在所述電漿腔室與所述基板之間且界定位於從所述初級孔口發射的帶狀射束的路徑中的次級孔口。
  9. 如請求項1所述的帶狀射束電漿增強化學氣相沉積系統，更包括偏壓電源，所述偏壓電源耦合到所述電漿腔室以及所述處理腔室，且用於在所述電漿腔室與所述基板之間選擇性地施加電壓差以用於從所述電漿腔室提取離子。
  10. 如請求項9所述的帶狀射束電漿增強化學氣相沉積系統，其中所述帶狀射束電漿增強化學氣相沉積系統能夠選擇性地以第一離子射束模式以及第二自由基模式操作，在所述第一離子射束模式中，啟用所述偏壓電源來從所述電漿腔室提取離子 且產生富含離子的帶狀射束，在所述第二自由基模式中，不啟用所述偏壓電源，從而產生富含自由基但不富含離子的帶狀射束。
  11. 一種帶狀射束電漿增強化學氣相沉積(PECVD)系統，包括：處理腔室，含有用於支撐基板的壓板；以及電漿源，鄰近於所述處理腔室設置且用於從供應到電漿腔室的氣體物質產生自由基，所述電漿腔室具有與其相關聯的孔口以允許所述自由基的射束離開所述電漿腔室；其中所述處理腔室維持在介於10-6托到10-2托範圍內的第一壓力，且所述電漿腔室維持在介於1毫托到1托範圍內的第二壓力；其中所述壓板以及所述電漿腔室中的至少一者能夠進行移動以及旋轉中的至少一者以相對於所述壓板的表面以傾斜角度將所述射束導向所述壓板；以及其中所述孔口由從所述電漿腔室延伸的細長噴嘴界定以用於使所述射束準直，所述孔口的寬度相對於所述孔口的高度的寬高比介於12：1到60：1範圍內，且所述孔口具有介於7毫米到20毫米範圍內的深度。
  12. 一種操作帶狀射束電漿增強化學氣相沉積(PECVD)系統的方法，所述帶狀射束電漿增強化學氣相沉積系統包含含有用於支撐基板的壓板的處理腔室以及鄰近於所述處理腔室設置的電漿源，所述方法包括：將氣體物質從氣體源供應到所述電漿源的電漿腔室中； 在所述電漿腔室中點燃所述氣體物質以產生高能電漿；以及在所述電漿腔室與所述處理腔室之間建立壓力差，以經由與所述電漿腔室相關聯的孔口提取含有所述電漿的自由基的準直帶狀射束，其中所述準直帶狀射束被導向所述基板；以及其中所述孔口由從所述電漿腔室延伸的細長噴嘴界定以用於使所述射束準直，所述孔口的寬度相對於所述孔口的高度的寬高比介於12：1到60：1範圍內，且所述孔口具有介於7毫米到20毫米範圍內的深度。
  13. 如請求項12所述的操作帶狀射束電漿增強化學氣相沉積系統的方法，其中所述氣體物質包含矽烷、甲烷、氨氣、氧氣、氮氣、四氯化矽、鍺烷、氬氣以及六氟化鎢中的至少一者。
  14. 如請求項12所述的操作帶狀射束電漿增強化學氣相沉積系統的方法，其中所述處理腔室中的第一壓力介於10-6托到10-2托範圍內，且所述電漿腔室中的第二壓力介於1毫托到1托範圍內。
  15. 如請求項12所述的操作帶狀射束電漿增強化學氣相沉積系統的方法，其中所述噴嘴包含在所述孔口的寬度上以平行間隔關係設置的多個橫向構件。
  16. 如請求項12所述的操作帶狀射束電漿增強化學氣相沉積系統的方法，其中所述孔口為初級孔口，所述方法更包括經由設置在所述電漿腔室與所述基板之間的屏障中的次級孔口來引導所述準直帶狀射束。
  17. 如請求項12所述的操作帶狀射束電漿增強化學氣相沉積系統的方法，更包括通過啟用偏壓電源而以離子射束模式操作所述電漿增強化學氣相沉積系統，所述偏壓電源耦合到所述電漿腔室以及所述處理腔室以在所述電漿腔室與所述基板之間選擇性地施加電壓差以從所述電漿腔室提取離子，從而產生富含離子的帶狀射束。
  18. 如請求項17所述的操作帶狀射束電漿增強化學氣相沉積系統的方法，更包括通過不啟用所述偏壓電源而以自由基模式操作所述電漿增強化學氣相沉積系統，從而產生富含自由基但不富含離子的帶狀射束。
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