TWI752326B - A graphene device, graphene transfer device and manufacturing method thereof - Google Patents

Abstract

The invention provides a graphene transfer device comprising a transfer substrate, a graphene layer on the transfer substrate, and a transfer composite layer on the graphene layer, wherein the adhesion force between graphene layer and the transfer composite layer is less than it between the graphene layer and the surface of the transfer substrate.

Description

Graphene device, graphene transfer device and manufacturing method thereof

The present invention relates to a two-dimensional material and a manufacturing method thereof, in particular to a graphene device, a graphene transfer device and a manufacturing method thereof.

Because of its good electronic, mechanical and chemical properties, graphene has great application potential in the application of flexible electronics. However, to prepare graphene into transparent conductive films with sufficient scale and quality for application, there is still a lack of efficient methods for synthesis, transfer, and doping, which hinders current applications.

Traditional transparent electrodes use indium tin oxide (ITO) and are commonly used in solar cells, touch sensors and flat panel displays. ITO has a sheet resistance of less than 100Ω□ ^-1 and an optical transparency of 90%. In contrast, the optimal sheet resistance for graphene grown on a nickel substrate by chemical vapor deposition (CVD) is 280Ω□ ^-1 and is only a centimeter-scale area. The CVD method of growth requires a substrate that can withstand temperatures approaching 1,000°C, and a metal catalyst layer that can be removed. Therefore, these are the main obstacles to the direct use of graphene. So it is essential to transfer graphene onto heterogeneous substrates. At present, the scale of production can be maximized by growing graphene on large flexible copper foils and using a roll-to-roll production method with roll pressing. However, it is necessary to transfer graphene films with large areas, high uniformity and no residual impurities , is still the biggest challenge encountered so far.

The present invention provides a device and method for transferring graphene in a large area. The wafer-level wafer substrate transferred by this technology can produce a graphene film with a large area, high uniformity and no residue of impurities, and is applied to semiconductor elements, High-power components, high-frequency components, microwave components, and high-sensitivity biosensors...etc.

The technical problem solved by the present invention is to propose a large-area graphene device and a manufacturing method thereof, which utilizes a multilayered polymer film structure with different physical properties as a support material during graphene transfer, and combines continuous production that can control various parameters. The equipment uses an innovative process method to achieve the technology development of transferring large-area graphene of four-inch wafer level or above to the target substrate. After transfer, the surface cleanliness of the film is improved by 7~10%, and the film integrity is improved by 15~18% , and can achieve large-area surface integrity and surface cleanliness, and has a low average sheet resistance, which can be introduced into industrial processes from the laboratory research and development stage to meet the needs of future technology applications.

The present invention provides a graphene transfer device, comprising a transfer substrate, a graphene layer on the transfer substrate, a transfer composite layer on the graphene layer, wherein the graphene layer and the transfer composite layer are attached The force is less than the adhesion between the graphene layer and the transfer substrate surface.

Further, wherein the transfer composite layer comprises a stress buffer layer and a support layer, the stress buffer layer is located between the graphene layer and the support layer, wherein the adhesion between the support layer and the stress buffer layer is smaller than the stress buffer layer the adhesion between the layer and the graphene layer.

Further, a first normal stress exists between the stress buffer layer and the support layer, and a second normal stress exists between the stress buffer layer and the graphene layer, wherein the second normal stress is greater than the first normal stress.

Further, a first shear stress exists between the stress buffer layer and the support layer, and a second shear stress exists between the stress buffer layer and the graphene layer, wherein the first shear stress is greater than the second shear stress.

The present invention provides a method for a large-area graphene transfer device, comprising the following steps: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a transfer transfer composite layer on the graphene layer removing the metal substrate to obtain a transfer composite layer/graphene layer structure; placing the structure on a transfer substrate to form the large-area graphene transfer device.

The present invention provides a method for a large-area graphene transfer device, comprising the following steps: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a stress buffer layer on the graphene layer Coating a support layer on this stress buffer layer; Remove this metal base material to obtain a support layer/stress buffer layer/graphene layer structure; This structure is placed on a transfer substrate to form this large area graphene transfer device.

Further, after coating the support layer on the stress buffer layer, a step of applying energy is also included.

The present invention provides a large-area graphene device, comprising a transfer substrate with a graphene layer on the transfer substrate, wherein the area of the graphene layer can be between 4 inches and 18 inches of wafers.

The present invention proposes a large-area graphene device, comprising a transfer substrate with a graphene layer on the transfer substrate, wherein the area of the graphene layer can be between 50 and 40,000 square centimeters in a long strip area, wherein the length and width are Between 1 and 200 cm.

Further, it includes a graphene element region and a graphene spacer region, wherein the graphene element region accounts for more than 90% of the area of the graphene layer.

Further, a protective layer is also included, and the stress protective layer accounts for less than 10% of the area of the graphene layer.

Furthermore, the area where the measured value of the Raman spectrum I _D / _IG <0.25 and I _2D / _IG >2 accounts for more than 92% of the total area.

The present invention provides a method for manufacturing a large-area graphene device, comprising the following steps: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a transfer transfer composite layer on the graphene layer Removing this metal base material to obtain a transfer composite layer/graphene layer structure; This structure is placed on a transfer substrate to form a large area of graphite with transfer transfer composite layer/graphene layer/transfer substrate structure A graphene transfer device; reducing the adhesion between the transfer composite layer and the graphene layer; peeling off the transfer composite layer to obtain the large-area graphene device.

The present invention provides a method for manufacturing a large-area graphene device, comprising the following steps: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a stress buffer layer on the graphene layer; Coating a support layer on the stress buffer layer; removing the metal substrate to obtain a support layer/stress buffer layer/graphene layer structure; placing the structure on a transfer substrate to form a support layer/stress buffer A large area graphene transfer device of layer/graphene layer/transfer substrate structure; reduce the adhesion of the molecules between the support layer and the stress buffer layer; remove the support layer; reduce the stress buffer layer and the molecules between the graphene layers the adhesion; peel off the stress buffer layer to obtain the large-area graphene device.

The present invention provides a method for manufacturing a large-area graphene device, comprising the following steps: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a stress buffer layer on the graphene layer; Coating a support layer on the stress buffer layer; removing the metal substrate to obtain a support layer/stress buffer layer/graphene layer structure; placing the structure in a transfer On the substrate, form a large-area graphene transfer device with a support layer/stress buffer layer/graphene layer/transfer substrate structure; reduce the adhesion of the molecules between the support layer and the stress buffer layer; remove the support layer, reduce Adhesion of molecules between the stress buffer layer and the graphene layer; after peeling off part of the stress buffer layer, the large-area graphene device is obtained.

1: Graphene transfer device

11, 31, 41: Transfer substrate

13, 33, 43: Graphene layers

15: Transfer composite layer

151: Stress buffer layer

153: Support Layer

331, 431: Graphene element area

333, 433: Graphene spacers

451: Protective Layer

S11-S15: Steps

2, 3, 4: Graphene devices

AA’: hatch

PN: normal force

PS: Lateral force

σ _ss : first normal stress

σ _gs : second normal stress

τ _ss : first shear stress

τ _gs : second shear stress

FIG. 1 is a schematic diagram of a graphene transfer device according to an embodiment of the present invention.

2 is a flow chart of a method for manufacturing a graphene transfer device according to an embodiment of the present invention.

3 is a schematic diagram of a graphene device according to an embodiment of the present invention.

4 is a schematic diagram of a graphene device according to another embodiment of the present invention.

FIG. 5 is a top view of a graphene device according to another embodiment of the present invention.

FIG. 6 is a side view of the graphene device of FIG. 5 along section line AA'.

FIG. 7 is a schematic diagram of the force of the graphene transfer device of the present invention.

FIG. 8 is a schematic diagram of the stress distribution of the stress buffer layer in the graphene transfer device of FIG. 7 .

The content of the present invention will be further described in detail below with reference to specific embodiments. The following detailed description and accompanying drawings are all for the purpose of further illustrating the ways, means and effects adopted by the present invention to achieve the predetermined purpose. However, the descriptions in the embodiments are only to illustrate the technical content of the present invention and its purpose and functions, and the dimensions and ratios in the figures are for illustrative purposes, rather than directly limiting the present invention.

Please refer to FIG. 1 , which is a schematic diagram of a graphene transfer device 1 of the present invention. The graphene transfer device 1 includes a transfer substrate 11 , and a graphene layer 13 is placed on the transfer substrate 11 . There is a transfer composite layer 15 on the graphene layer 13 . When the graphene layer 13 is transferred to the transfer substrate 11, the transfer composite layer 15 has a support function and a stress buffer function to prevent the graphene layer 13 from being damaged by external forces during the transfer process, A graphene film with a large area, high uniformity and no residual impurities can be transferred.

Please refer to FIG. 2, which is a flow chart of the manufacturing method of the above-mentioned graphene transfer device 1, including the following steps, step S11: providing a metal substrate, including but not limited to metal materials such as copper, nickel, cobalt, etc.; step S12: The graphene layer 13 is grown on the surface of the metal substrate, and the growth method of the graphene layer 13 includes, but is not limited to, including mechanical exfoliation, reduced graphene oxide, and liquid phase exfoliation ( liquid phase exfoliation), epitaxial growth, chemical vapor deposition (CVD), electrochemical exfoliation, etc.; Step S13: Coating a transfer composite layer 15 on graphite On the graphene layer 13, air-dry or heat or illuminate in the air to form a solid film layer, strengthen the adhesion between the graphene layer 13 and the transfer composite layer 15, and form a transfer composite layer 15/graphene layer 13/metal substrate step S14: then remove the metal substrate of the above layered structure to obtain the structure of the transfer composite layer 15/graphene layer 13, step S15: then place the above structure on the transfer substrate 11 to form Graphene transfer device 1 having transfer composite layer 15 /graphene layer 13 /transfer substrate 11 .

The above-mentioned transfer composite layer 15 includes a stress buffer layer 151 and a support layer 153. First, the stress buffer layer 151 is coated on the graphene layer 13 and dried in the air or heated or illuminated to form a solid film layer to strengthen the graphite. Adhesion between the olefin layer 13 and the stress buffer layer 151, the material of the stress buffer layer 151 may include polymer materials, such as but not limited to: polymethyl methacrylate (PMMA, Poly (methyl methacrylate)), polystyrene (PS ,Polystyrene), Polylactic Acid (PLA, Polylactic Acid), Photoresist (PR, photoresist), Rosin (Rosin), Polyvinyl Alcohol (PVA, Polyvinyl alcohol), Polydimethylsiloxane (PDMS, Polydimethylsiloxane), etc.; The support layer 153 is placed on the stress buffer layer 151, and is dried in the air or heated or illuminated to form a solid film layer to enhance the adhesion between the stress buffer layer 151 and the support layer 153. The material of the support layer 153 may include polymer materials, such as but Not limited to: polymethyl methacrylate (PMMA, Poly (methyl methacrylate), polyethylene terephthalate (PET, Polyethylene Terephthalate), polyimide (PI, Polyimide), pyrolytic tape (TRT, thermal release tape), polylactic acid (PLA, Polylactic Acid), photoresist (PR, photoresist), polyethylene (PE, Polyethylene), polydimethylsiloxane (PDMS, Polydimethylsiloxane), ethylene/vinyl acetate copolymer ( EVA, Polyethylene vinylacetate), wax (Wax), parylene (parylene), etc.

The bonding of the stress buffer layer 151 and a support layer 153 can increase the bonding force between the support layer 153 and the stress buffer layer 151 by applying pressure, such as but not limited to using a roll-to-roll rolling device. The rolling action of the layer 153 and the stress buffer layer 151 may also include flat plate hot pressing, vacuum lamination, and the like. Next, the metal substrate is removed to obtain the structure of the support layer 153/stress buffer layer 151/graphene layer 13, which is cleaned with deionized water, and the surface is blown dry with nitrogen; the above structure is then placed on the transfer substrate 1 to form a structure with The graphene transfer device 1 with the multi-layer structure of the support layer 153/stress buffer layer 151/graphene layer 13/transfer substrate 11.

The above-mentioned step of removing the metal substrate can be carried out by means of direct mechanical peeling. In other embodiments of the present invention, the metal substrate can be weakened and separated by a decoupling process, for example, an oxidation step is performed to oxidize the metal substrate on which the graphene layer 13 has grown. , so that a metal oxide layer is formed between the graphene layer 13 and the metal substrate, The bonding force between the graphene layer 13 and the metal substrate can be weakened. At this time, the metal substrate can be removed by means of direct mechanical peeling, or the electrochemical step can be used after the oxidation step, and the bias voltage can be applied to remove the metal substrate. Electrochemical intercalation reaction is performed to reduce the oxidized metal layer to a metal substrate to further weaken the bonding force between the graphene layer 13 and the metal substrate to achieve a more effective peeling effect. In addition, the delamination method is not limited The above also includes intercalation weakening of chemical molecules by diffusion.

After obtaining the above-mentioned graphene transfer device 1, a step of removing the transfer composite layer 15 is carried out to obtain the graphene device 2, as shown in FIG. Double layer structure. The action of removing the transfer composite layer 15 is performed, and the method includes the action of peeling off the support layer 153 first, leaving a three-layer structure of the stress buffer layer 151/graphene layer 13/transfer substrate 11, and then using the above-mentioned three-layer structure. The stress buffer layer 151 is cleaned by soaking in a solvent, cracking by light, heating and volatilizing. The solvent can be, for example, but not limited to, acetone (Acetone), rinsed with isopropyl alcohol (2-Propanol), and finally dried with nitrogen to obtain graphite ene device 2. In the graphene device 2, the area that the graphene layer 13 can cover is about 4 inches, 6 inches, 8 inches, 12 inches, 16 inches-18 inches, and/or the area that can be covered is 50, 100 inches. , 200, 400, 800, 1,000 square centimeters to 40,000 square centimeters, with a width and length ranging from 1, 5, 10, 50, 100 centimeters to 200 centimeters, respectively.

The adhesion between the support layer 153 and the stress buffer layer 151 is smaller than the adhesion between the stress buffer layer 151 and the graphene layer 13, and the peeling method of the support layer 153 can be peeled off by direct physical method. Using heated peels, the overall electrical properties of heated peels are better than unheated ones, and heated peels can reduce the overall average sheet resistance from unheated by 80% because heated peels have fewer structural defects. In the Raman spectrum measurement section, after heating the graphene layer peeling of I _D 13 / I _G ratio of the overall average fall of about 0.1-0.25, I _2D / I _G ratio of the average heat release fall after about 1-2. I _2D / _IG =2 can represent that the graphene layer 13 is single-layer graphene, I _2D / _IG =1 is double-layer graphene, and I _2D / _IG =0.5 is triple-layer graphene. In the present embodiment, the graphene layer 13 Raman spectrum of the measured values, I _D / I _G ratio <0.25, I _2D / I _G ratio of> 0.5 of the total area of the area of more than 92%.

The adhesive force between the stress buffer layer 151 and the graphene layer 13 is smaller than the adhesion force between the graphene layer 13 and the transfer substrate 11 , so that the stress buffer layer 151 is easily separated from the graphene layer 13 . The above-mentioned removal of the transfer composite layer 15 includes the step of adjusting the adhesion energy between the layers, by adjusting the adhesion between the support layer 153 and the stress buffer layer 151, and the intermolecular contact between the stress buffer layer 151 and the graphene layer 13. The size of the adhesion energy, thereby controlling the integrity of the graphene layer 13 after the peeling step. Lowering the adhesion energy is easy to separate, and a graphene layer 13 with a large area and high integrity can be obtained. For example, when the stress buffer layer 151 is removed, appropriate energy and pressure can be added, such as heating and heating, microwave or light energy heating, specific light wave irradiation or even combination, etc. The pressure can be hot pressing, etc. The molecular adhesion energy of the olefinic layer 13 contact is reduced, so it can be removed cleanly and easily. In other embodiments, the solvent can be completely dissolved, sublimated, melted and formed superhydrophobicity on the surface, and can be aggregated into droplets and removed by blowing or dragging. In other embodiments, the purpose of selectively removing the graphene layer 13 can be achieved by increasing the adhesion energy between the molecules in contact with the stress buffer layer 151 and the graphene layer 13 . The above-mentioned change of the adhesion energy between molecules can achieve the purpose of selective removal. It can be understood that the method can include, for example, nano-imprinting (mold) TRT can be selectively contacted, and the adhesion energy can be changed by pressure, In other embodiments, the energy can be irradiated selectively through transmission, and the purpose of changing the adhesion energy between molecules can also be achieved.

In the above-mentioned coating method of the transfer composite layer 15, the film thicknesses corresponding to different spin coating speeds are different, and the film thickness also becomes thinner as the speed increases, but after a certain speed, the thickness tends to be stable. When the film becomes thinner, the electrical properties of the graphene layer 13 will become worse after the transfer. The reason is that the film becomes thinner and the stress buffering effect becomes worse. During rolling, the graphene layer 13 is affected by the stress and is damaged. .

Please refer to FIG. 4 , which is a schematic diagram of a graphene device 3 in another embodiment of the present invention. The graphene device 3 includes a graphene element region 331 and a graphene spacer region 333, and the purpose of patterning the graphene layer 13 can be achieved by modulating the adhesion energy of the molecules between the graphene layer 13 and the transfer composite layer 15. When the adhesion between the graphene layer 13 and the transfer composite layer 15 is greater than the adhesion between the graphene layer 13 and the transfer substrate 11, the graphene layer 13 and the transfer composite layer 15 will be removed together to obtain a graphene spacer 333; when the adhesion between the graphene layer 13 and the transfer composite layer 15 is less than the adhesion between the graphene layer 13 and the transfer substrate 11, only the printed composite layer 15 can be removed to obtain the graphene element region 331. The area of the graphene layer 13 that can be covered is about 4 inches, 6 inches, 8 inches, 12 inches, 16 inches to 18 inches wafers, and/or the areas that can be covered are 50, 100, 200, 400 inches , 800, 1,000 square centimeters to 40,000 square centimeters, and the width and length are between 1, 5, 10, 50, 100 centimeters and 200 centimeters respectively. The graphene element region 331 occupies more than 90% of the area of the graphene layer 33 .

Please refer to FIG. 5 and FIG. 6 , which are schematic diagrams of a graphene device 4 in another embodiment of the present invention. The graphene device 4 has a double-layer structure of a graphene layer 43/transfer substrate 41 . FIG. 5 is a top view of the graphene device 4, and FIG. 6 is a side view of FIG. 5 along the AA' section line. The graphene layer 43 includes a graphene element region 431 and a graphene spacer region 433. The area of the graphene layer 43 that can be covered is about 4 inches, 6 inches, 8 inches, 12 inches, 16 inches to 18 inches wafers , and/or can be covered The area is 50, 100, 200, 400, 800, 1,000 square centimeters - 40,000 square centimeters, and the width and length are between 1, 5, 10, 50, 100 centimeters and more to 200 centimeters. The graphene element region 431 occupies more than 90% of the area of the graphene layer 43 . Referring to FIGS. 5 and 6 again, the purpose of patterning the graphene layer 43 can be achieved by modulating the molecular adhesion energy between the graphene layer 43 and the stress buffer layer (not shown). When the adhesion between the graphene layer 43 and the stress buffer layer is greater than the adhesion force between the graphene layer 43 and the transfer substrate 41, the graphene layer 43 and the stress buffer layer will be removed together to obtain the graphene spacer 433; the graphene layer When the adhesion between 43 and the stress buffer layer is smaller than the adhesion between the graphene layer 13 and the transfer substrate 11, when the stress buffer layer is removed, some residual and non-residual areas will be obtained, and the residual stress buffer layer will form a protective layer 451 In the graphene layer 43 , the protective layer 451 occupies less than 10% of the area of the graphene layer 43 . A graphene element region 431 is obtained from the non-remaining region.

The above-mentioned modulation of the intermolecular adhesion force to achieve different graphene layer 43 coverage areas, and then the semiconductor process can be selectively performed in the graphene element region 331 or the graphene spacer region 333 or in the graphene element region 331 and graphene. The spacer 333 junction area is stacked with material to fabricate the device, resulting in a transmission or non-transmission or heterojunction function through the underlying graphene. The protective layer 451 can be used as an electrical transmission barrier layer, a structural pad or a sacrificial layer, and a semiconductor process can be used to push up materials on the substrate to fabricate components.

Please refer to FIG. 7, which is a schematic diagram of the force of the graphene transfer device 1 in the embodiment of the present invention. When the graphene layer 13 is transferred to the transfer substrate 11, the transfer composite layer 15 has a supporting function. And it has the function of stress buffering to prevent the graphene layer 13 from being damaged by external force during the transfer process. During the transfer process, it will be affected by the normal force P _N and the side force P _S. 8 is a schematic diagram of the stress distribution of the stress buffer layer 151 in the graphene transfer device 1 , the stress buffer layer 151 and the support layer 153 have a first normal stress σ _ss toward the stress buffer layer 151 , and the stress buffer layer 151 and _{There is a second normal stress σ gs} between the graphene layers 13 toward the stress buffer layer 151 , wherein the second normal stress σ _{gs is} greater than the first normal stress σ _ss . _{There is a first shear stress τ ss} between the stress buffer layer 151 and the support layer 153 _{, and a second shear stress τ gs} between the stress buffer layer 151 and the graphene layer 13 , wherein the first shear stress τ _{ss is} greater than the second shear stress τ _gs .

Using the multi-layered polymer film structure with different physical properties disclosed in the present invention as the transfer composite layer during graphene transfer, and combined with continuous production equipment that can control various parameters, an innovative process method is used to achieve 4-inch wafers. The technology development of transferring large-area graphene of circular grade or above to the target substrate, after transfer, the surface cleanliness of the film is improved by 7~10%, and the film integrity is improved by 9~12%, and it can provide large-area surface integrity and Surface cleanliness and low average sheet resistance can be introduced into industrial processes from the laboratory R&D stage to meet the needs of future technology applications.

1: Graphene transfer device

11: Transfer the substrate

13: Graphene layer

15: Transfer composite layer

151: Stress buffer layer

153: Support Layer

Claims (14)

A graphene transfer device, comprising a transfer substrate, a graphene layer on the transfer substrate, a transfer composite layer on the graphene layer, wherein the adhesion between the graphene layer and the transfer composite layer is less than the Adhesion between the graphene layer and the surface of the transfer substrate. The graphene transfer device according to claim 1, wherein the transfer composite layer comprises a stress buffer layer and a support layer, the stress buffer layer is located between the graphene layer and the support layer, wherein the support layer and The adhesion between the stress buffer layers is smaller than the adhesion between the stress buffer layer and the graphene layer. The graphene transfer device according to claim 2, a first normal stress exists between the stress buffer layer and the support layer, a second normal stress exists between the stress buffer layer and the graphene layer, wherein the second The normal stress is greater than the first normal stress. The graphene transfer device of claim 2, a first shear stress exists between the stress buffer layer and the support layer, a second shear stress exists between the stress buffer layer and the graphene layer, wherein the first shear stress greater than the second shear stress. A method for manufacturing a graphene transfer device as claimed in claim 1, comprising the steps of: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a transfer transfer composite layer on the metal substrate on the graphene layer; removing the metal substrate to obtain a transfer composite layer/graphene layer structure; placing the structure on a transfer substrate to form the graphene transfer device. A method of manufacturing a graphene transfer device as claimed in claim 2, comprising the steps of: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a stress buffer layer on the graphite on the olefin layer; coating a support layer on the stress buffer layer; removing the metal substrate to obtain A support layer/stress buffer layer/graphene layer structure; the structure is placed on a transfer substrate to form the graphene transfer device. The manufacturing method according to claim 6, further comprising a step of applying energy after coating the support layer on the stress buffer layer. A method for manufacturing a graphene device, comprising the steps of: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a transfer transfer composite layer on the graphene layer; removing the metal substrate material to obtain a transfer composite layer/graphene layer structure; place the structure on a transfer substrate to form a graphene transfer device with a transfer transfer composite layer/graphene layer/transfer substrate structure; reduce the Transferring the adhesion between the composite layer and the graphene layer; peeling off the transfer composite layer to obtain the graphene device. A method for manufacturing a graphene device, comprising the steps of: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a stress buffer layer on the graphene layer; coating a support layer on the stress buffer layer; remove the metal substrate to obtain a support layer/stress buffer layer/graphene layer structure; place the structure on a transfer substrate to form a support layer/stress buffer layer/graphene layer / A graphene transfer device for transferring a substrate structure; reduce the adhesion of the molecules between the support layer and the stress buffer layer; remove the support layer; reduce the adhesion of the stress buffer layer and the molecules between the graphene layers; the stress The buffer layer is peeled off to obtain the graphene device. A graphene device using the manufacturing method described in claim 8 or 9, comprising a transfer substrate with a graphene layer on the transfer substrate. The graphene device of claim 10, wherein the graphene layer includes a graphene element region and a graphene spacer region, wherein the graphene element region accounts for more than 90% of the area of the graphene layer. According to the large-area graphene device according to claim 10, the area with measured values of Raman spectrum I _D / _IG <0.25 and I _2D / _IG- >0.5 accounts for more than 92% of the total area. A method for manufacturing a graphene device, comprising the steps of: providing a metal substrate; growing a graphene layer on the surface of the metal substrate; coating a stress buffer layer on the graphene layer; coating a support layer on the stress buffer layer; remove the metal substrate to obtain a support layer/stress buffer layer/graphene layer structure; place the structure on a transfer substrate to form a support layer/stress buffer layer/graphene layer A graphene transfer device for transferring a substrate structure; reduce the adhesion of the molecules between the support layer and the stress buffer layer; remove the support layer to reduce the adhesion of the stress buffer layer and the molecules between the graphene layers; partially After the stress buffer layer is peeled off, the graphene device is obtained. A graphene device using the manufacturing method of claim 13, wherein the part of the stress buffer layer occupies less than 10% of the area of the graphene layer.

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