TWI752237B - 疊加度量衡方法及系統 - Google Patents

疊加度量衡方法及系統 Download PDF

Info

Publication number
TWI752237B
TWI752237B TW107120671A TW107120671A TWI752237B TW I752237 B TWI752237 B TW I752237B TW 107120671 A TW107120671 A TW 107120671A TW 107120671 A TW107120671 A TW 107120671A TW I752237 B TWI752237 B TW I752237B
Authority
TW
Taiwan
Prior art keywords
imaging
scatterometry
overlay target
target design
based overlay
Prior art date
Application number
TW107120671A
Other languages
English (en)
Chinese (zh)
Other versions
TW201905586A (zh
Inventor
大衛 格瑞奥迪
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201905586A publication Critical patent/TW201905586A/zh
Application granted granted Critical
Publication of TWI752237B publication Critical patent/TWI752237B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
TW107120671A 2017-06-19 2018-06-15 疊加度量衡方法及系統 TWI752237B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762521782P 2017-06-19 2017-06-19
US62/521,782 2017-06-19
US15/995,731 2018-06-01
US15/995,731 US11112369B2 (en) 2017-06-19 2018-06-01 Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay

Publications (2)

Publication Number Publication Date
TW201905586A TW201905586A (zh) 2019-02-01
TWI752237B true TWI752237B (zh) 2022-01-11

Family

ID=64657997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107120671A TWI752237B (zh) 2017-06-19 2018-06-15 疊加度量衡方法及系統

Country Status (8)

Country Link
US (1) US11112369B2 (https=)
EP (1) EP3635488A4 (https=)
JP (1) JP7018970B2 (https=)
KR (1) KR102353260B1 (https=)
CN (1) CN110770654B (https=)
SG (1) SG11201911992TA (https=)
TW (1) TWI752237B (https=)
WO (1) WO2018236653A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US11809090B2 (en) * 2020-01-30 2023-11-07 Kla Corporation Composite overlay metrology target
US12100574B2 (en) * 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11726410B2 (en) * 2021-04-20 2023-08-15 Kla Corporation Multi-resolution overlay metrology targets
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US12044982B2 (en) * 2021-12-02 2024-07-23 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements
US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12416867B2 (en) * 2022-09-22 2025-09-16 United Microelectronics Corp. Overlay target and overlay method
US20240110780A1 (en) * 2022-09-30 2024-04-04 Kla Corporation Mosaic overlay targets
KR102844370B1 (ko) * 2022-12-07 2025-08-08 (주) 오로스테크놀로지 업샘플링을 이용한 오버레이 측정 방법 및 장치와, 이를 이용한 반도체 소자의 제조 방법
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US20240337952A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for determining overlay measurement of a scanning target

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1920670A (zh) * 2004-11-22 2007-02-28 Asml荷兰有限公司 潜像叠对量测方法
TW201515128A (zh) * 2013-06-19 2015-04-16 Kla Tencor Corp 併合成像及散射測量靶
US20150177135A1 (en) * 2013-05-30 2015-06-25 Kla-Tencor Corporation Combined imaging and scatterometry metrology

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
JP2002231616A (ja) 2001-02-05 2002-08-16 Nikon Corp 位置計測装置及び方法、露光装置及び方法、並びにデバイス製造方法
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7193715B2 (en) * 2002-11-14 2007-03-20 Tokyo Electron Limited Measurement of overlay using diffraction gratings when overlay exceeds the grating period
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
US7065737B2 (en) 2004-03-01 2006-06-20 Advanced Micro Devices, Inc Multi-layer overlay measurement and correction technique for IC manufacturing
NL2003588A (en) 2008-12-15 2010-06-16 Asml Holding Nv Reticle inspection systems and method.
US8214771B2 (en) 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
CN103748515A (zh) 2011-08-23 2014-04-23 Asml荷兰有限公司 量测方法和设备以及器件制造方法
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US9007585B2 (en) * 2012-03-07 2015-04-14 Kla-Tencor Corporation Imaging overlay metrology target and complimentary overlay metrology measurement system
US8913237B2 (en) 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9029810B2 (en) 2013-05-29 2015-05-12 Kla-Tencor Corporation Using wafer geometry to improve scanner correction effectiveness for overlay control
WO2015009739A1 (en) 2013-07-18 2015-01-22 Kla-Tencor Corporation Illumination configurations for scatterometry measurements
WO2015078669A1 (en) 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology
WO2015101458A1 (en) 2013-12-30 2015-07-09 Asml Netherlands B.V. Method and apparatus for design of a metrology target
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
KR101960403B1 (ko) * 2014-08-28 2019-03-20 에이에스엠엘 네델란즈 비.브이. 검사 장치, 검사 방법 및 제조 방법
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
KR20170096004A (ko) 2014-12-17 2017-08-23 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1920670A (zh) * 2004-11-22 2007-02-28 Asml荷兰有限公司 潜像叠对量测方法
US20150177135A1 (en) * 2013-05-30 2015-06-25 Kla-Tencor Corporation Combined imaging and scatterometry metrology
TW201515128A (zh) * 2013-06-19 2015-04-16 Kla Tencor Corp 併合成像及散射測量靶

Also Published As

Publication number Publication date
JP2020524276A (ja) 2020-08-13
EP3635488A4 (en) 2021-04-28
TW201905586A (zh) 2019-02-01
EP3635488A1 (en) 2020-04-15
CN110770654A (zh) 2020-02-07
JP7018970B2 (ja) 2022-02-14
CN110770654B (zh) 2022-11-18
KR102353260B1 (ko) 2022-01-18
WO2018236653A1 (en) 2018-12-27
SG11201911992TA (en) 2020-01-30
US11112369B2 (en) 2021-09-07
US20180364179A1 (en) 2018-12-20
KR20200010585A (ko) 2020-01-30

Similar Documents

Publication Publication Date Title
TWI752237B (zh) 疊加度量衡方法及系統
JP4594280B2 (ja) 偏向リソグラフィーのためのアライメントマークおよびその検出方法
US9970863B2 (en) Optical metrology with reduced focus error sensitivity
US9110039B2 (en) Auto-focus system and methods for die-to-die inspection
TWI893297B (zh) 用於疊對量測之目標及執行疊對量測之方法
JP7203725B2 (ja) 基板の特性を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法
US11726410B2 (en) Multi-resolution overlay metrology targets
JP2022548544A (ja) 多走査電子顕微鏡法を使用したウェーハアライメント
CN120500664A (zh) 经由宽带照明的单次抓取光瞳景观
CN115628685B (zh) 关键尺寸的测量方法、设备及关键尺寸的分级定位方法
US11720031B2 (en) Overlay design for electron beam and scatterometry overlay measurements
JPWO2020190318A5 (https=)
TWI894457B (zh) 半導體裝置中之疊對量測的目標，以及使用該目標執行疊對量測之方法
CN121310982B (zh) 用于对晶圆进行缺陷检测的方法及装置