SG11201911992TA - Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay - Google Patents

Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay

Info

Publication number
SG11201911992TA
SG11201911992TA SG11201911992TA SG11201911992TA SG11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA
Authority
SG
Singapore
Prior art keywords
overlay
scatterometry
imaging
hybrid
based overlay
Prior art date
Application number
SG11201911992TA
Other languages
English (en)
Inventor
David Gready
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201911992TA publication Critical patent/SG11201911992TA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70653Metrology techniques
    • G03F7/70666Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70681Metrology strategies
    • G03F7/70683Mark designs
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706849Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
SG11201911992TA 2017-06-19 2018-06-14 Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay SG11201911992TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762521782P 2017-06-19 2017-06-19
US15/995,731 US11112369B2 (en) 2017-06-19 2018-06-01 Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
PCT/US2018/037430 WO2018236653A1 (en) 2017-06-19 2018-06-14 HYBRID RECOVERY TARGET DESIGN FOR IMAGING-BASED RECOVERY AND DIFFUSIOMETRY-BASED RECOVERY

Publications (1)

Publication Number Publication Date
SG11201911992TA true SG11201911992TA (en) 2020-01-30

Family

ID=64657997

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201911992TA SG11201911992TA (en) 2017-06-19 2018-06-14 Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay

Country Status (8)

Country Link
US (1) US11112369B2 (https=)
EP (1) EP3635488A4 (https=)
JP (1) JP7018970B2 (https=)
KR (1) KR102353260B1 (https=)
CN (1) CN110770654B (https=)
SG (1) SG11201911992TA (https=)
TW (1) TWI752237B (https=)
WO (1) WO2018236653A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US11809090B2 (en) * 2020-01-30 2023-11-07 Kla Corporation Composite overlay metrology target
US12100574B2 (en) * 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11726410B2 (en) * 2021-04-20 2023-08-15 Kla Corporation Multi-resolution overlay metrology targets
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US12044982B2 (en) * 2021-12-02 2024-07-23 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements
US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12416867B2 (en) * 2022-09-22 2025-09-16 United Microelectronics Corp. Overlay target and overlay method
US20240110780A1 (en) * 2022-09-30 2024-04-04 Kla Corporation Mosaic overlay targets
KR102844370B1 (ko) * 2022-12-07 2025-08-08 (주) 오로스테크놀로지 업샘플링을 이용한 오버레이 측정 방법 및 장치와, 이를 이용한 반도체 소자의 제조 방법
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US20240337952A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for determining overlay measurement of a scanning target

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
JP2002231616A (ja) 2001-02-05 2002-08-16 Nikon Corp 位置計測装置及び方法、露光装置及び方法、並びにデバイス製造方法
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7193715B2 (en) * 2002-11-14 2007-03-20 Tokyo Electron Limited Measurement of overlay using diffraction gratings when overlay exceeds the grating period
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
US7065737B2 (en) 2004-03-01 2006-06-20 Advanced Micro Devices, Inc Multi-layer overlay measurement and correction technique for IC manufacturing
US20060109463A1 (en) 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
NL2003588A (en) 2008-12-15 2010-06-16 Asml Holding Nv Reticle inspection systems and method.
US8214771B2 (en) 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
CN103748515A (zh) 2011-08-23 2014-04-23 Asml荷兰有限公司 量测方法和设备以及器件制造方法
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US9007585B2 (en) * 2012-03-07 2015-04-14 Kla-Tencor Corporation Imaging overlay metrology target and complimentary overlay metrology measurement system
US8913237B2 (en) 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9029810B2 (en) 2013-05-29 2015-05-12 Kla-Tencor Corporation Using wafer geometry to improve scanner correction effectiveness for overlay control
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
TWI621190B (zh) * 2013-06-19 2018-04-11 克萊譚克公司 併合成像及散射測量靶
WO2015009739A1 (en) 2013-07-18 2015-01-22 Kla-Tencor Corporation Illumination configurations for scatterometry measurements
WO2015078669A1 (en) 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology
WO2015101458A1 (en) 2013-12-30 2015-07-09 Asml Netherlands B.V. Method and apparatus for design of a metrology target
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
KR101960403B1 (ko) * 2014-08-28 2019-03-20 에이에스엠엘 네델란즈 비.브이. 검사 장치, 검사 방법 및 제조 방법
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
KR20170096004A (ko) 2014-12-17 2017-08-23 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry

Also Published As

Publication number Publication date
JP2020524276A (ja) 2020-08-13
EP3635488A4 (en) 2021-04-28
TW201905586A (zh) 2019-02-01
EP3635488A1 (en) 2020-04-15
CN110770654A (zh) 2020-02-07
JP7018970B2 (ja) 2022-02-14
CN110770654B (zh) 2022-11-18
TWI752237B (zh) 2022-01-11
KR102353260B1 (ko) 2022-01-18
WO2018236653A1 (en) 2018-12-27
US11112369B2 (en) 2021-09-07
US20180364179A1 (en) 2018-12-20
KR20200010585A (ko) 2020-01-30

Similar Documents

Publication Publication Date Title
SG11201911992TA (en) Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
SG11201708164YA (en) Metrology target design for tilted device designs
IL247131B (en) A method for optimizing the arrangement of a target and associated target
PL3504506T3 (pl) Cel
ZA202102093B (en) Cys80 conjugated immunoglobulins
GB201714935D0 (en) Target vehicle deselection
PT3432912T (pt) Vetores de hsv de elevada transdução
GB201609712D0 (en) Disease targets and biomarkers
PL3380409T3 (pl) System pakowania i wykroje do niego
ZA201501705B (en) Bi-function secondary radar and radar system comprising such a radar
GB201615847D0 (en) Surgical tracking
EP3253356A4 (en) Overlay for medication card
GB2548182B (en) Aperture liner
GB201619797D0 (en) Integrated sign extensions for loads
HUE042273T2 (hu) Elektromágneses szelep
GB201503312D0 (en) Targets
GB201515735D0 (en) Closure for aperture
SG11201803688WA (en) Integrated electromagnetic seeker
GB2547686B (en) An interlock system and parts thereof
GB201719595D0 (en) Access control for digitl assets
HUP1700251A2 (hu) Mechanikusan mozgásba hozható célpontokkal szerelt célba lövésre kialakított szerkezetek
GB201719928D0 (en) Accelerator
GB201611881D0 (en) Object accelerator
PH32015000665S1 (en) Overlay for medication card
AU2015903973A0 (en) An Overlay