SG11201911992TA - Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay - Google Patents
Hybrid overlay target design for imaging-based overlay and scatterometry-based overlayInfo
- Publication number
- SG11201911992TA SG11201911992TA SG11201911992TA SG11201911992TA SG11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA
- Authority
- SG
- Singapore
- Prior art keywords
- overlay
- scatterometry
- imaging
- hybrid
- based overlay
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762521782P | 2017-06-19 | 2017-06-19 | |
| US15/995,731 US11112369B2 (en) | 2017-06-19 | 2018-06-01 | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| PCT/US2018/037430 WO2018236653A1 (en) | 2017-06-19 | 2018-06-14 | HYBRID RECOVERY TARGET DESIGN FOR IMAGING-BASED RECOVERY AND DIFFUSIOMETRY-BASED RECOVERY |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201911992TA true SG11201911992TA (en) | 2020-01-30 |
Family
ID=64657997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201911992TA SG11201911992TA (en) | 2017-06-19 | 2018-06-14 | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11112369B2 (https=) |
| EP (1) | EP3635488A4 (https=) |
| JP (1) | JP7018970B2 (https=) |
| KR (1) | KR102353260B1 (https=) |
| CN (1) | CN110770654B (https=) |
| SG (1) | SG11201911992TA (https=) |
| TW (1) | TWI752237B (https=) |
| WO (1) | WO2018236653A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10795268B2 (en) * | 2017-09-29 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for measuring overlay errors using overlay measurement patterns |
| US11809090B2 (en) * | 2020-01-30 | 2023-11-07 | Kla Corporation | Composite overlay metrology target |
| US12100574B2 (en) * | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| US11726410B2 (en) * | 2021-04-20 | 2023-08-15 | Kla Corporation | Multi-resolution overlay metrology targets |
| US11703767B2 (en) | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11720031B2 (en) | 2021-06-28 | 2023-08-08 | Kla Corporation | Overlay design for electron beam and scatterometry overlay measurements |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| US12044982B2 (en) * | 2021-12-02 | 2024-07-23 | Micron Technology, Inc. | Apparatuses and methods for diffraction base overlay measurements |
| US11796925B2 (en) * | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12094100B2 (en) * | 2022-03-03 | 2024-09-17 | Kla Corporation | Measurement of stitching error using split targets |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| US12416867B2 (en) * | 2022-09-22 | 2025-09-16 | United Microelectronics Corp. | Overlay target and overlay method |
| US20240110780A1 (en) * | 2022-09-30 | 2024-04-04 | Kla Corporation | Mosaic overlay targets |
| KR102844370B1 (ko) * | 2022-12-07 | 2025-08-08 | (주) 오로스테크놀로지 | 업샘플링을 이용한 오버레이 측정 방법 및 장치와, 이를 이용한 반도체 소자의 제조 방법 |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
| US20240337952A1 (en) * | 2023-04-04 | 2024-10-10 | Kla Corporation | System and method for determining overlay measurement of a scanning target |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| JP2002231616A (ja) | 2001-02-05 | 2002-08-16 | Nikon Corp | 位置計測装置及び方法、露光装置及び方法、並びにデバイス製造方法 |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| US7193715B2 (en) * | 2002-11-14 | 2007-03-20 | Tokyo Electron Limited | Measurement of overlay using diffraction gratings when overlay exceeds the grating period |
| US7230703B2 (en) * | 2003-07-17 | 2007-06-12 | Tokyo Electron Limited | Apparatus and method for measuring overlay by diffraction gratings |
| US7065737B2 (en) | 2004-03-01 | 2006-06-20 | Advanced Micro Devices, Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
| US20060109463A1 (en) | 2004-11-22 | 2006-05-25 | Asml Netherlands B.V. | Latent overlay metrology |
| NL2003588A (en) | 2008-12-15 | 2010-06-16 | Asml Holding Nv | Reticle inspection systems and method. |
| US8214771B2 (en) | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
| CN103748515A (zh) | 2011-08-23 | 2014-04-23 | Asml荷兰有限公司 | 量测方法和设备以及器件制造方法 |
| US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| US9007585B2 (en) * | 2012-03-07 | 2015-04-14 | Kla-Tencor Corporation | Imaging overlay metrology target and complimentary overlay metrology measurement system |
| US8913237B2 (en) | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
| US9093458B2 (en) * | 2012-09-06 | 2015-07-28 | Kla-Tencor Corporation | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| US9029810B2 (en) | 2013-05-29 | 2015-05-12 | Kla-Tencor Corporation | Using wafer geometry to improve scanner correction effectiveness for overlay control |
| WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
| TWI621190B (zh) * | 2013-06-19 | 2018-04-11 | 克萊譚克公司 | 併合成像及散射測量靶 |
| WO2015009739A1 (en) | 2013-07-18 | 2015-01-22 | Kla-Tencor Corporation | Illumination configurations for scatterometry measurements |
| WO2015078669A1 (en) | 2013-11-26 | 2015-06-04 | Asml Netherlands B.V. | Method, apparatus and substrates for lithographic metrology |
| WO2015101458A1 (en) | 2013-12-30 | 2015-07-09 | Asml Netherlands B.V. | Method and apparatus for design of a metrology target |
| US9784690B2 (en) * | 2014-05-12 | 2017-10-10 | Kla-Tencor Corporation | Apparatus, techniques, and target designs for measuring semiconductor parameters |
| KR101960403B1 (ko) * | 2014-08-28 | 2019-03-20 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치, 검사 방법 및 제조 방법 |
| US10210606B2 (en) * | 2014-10-14 | 2019-02-19 | Kla-Tencor Corporation | Signal response metrology for image based and scatterometry overlay measurements |
| SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| KR20170096004A (ko) | 2014-12-17 | 2017-08-23 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법 |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
-
2018
- 2018-06-01 US US15/995,731 patent/US11112369B2/en not_active Expired - Fee Related
- 2018-06-14 SG SG11201911992TA patent/SG11201911992TA/en unknown
- 2018-06-14 CN CN201880040658.1A patent/CN110770654B/zh active Active
- 2018-06-14 EP EP18819930.1A patent/EP3635488A4/en active Pending
- 2018-06-14 WO PCT/US2018/037430 patent/WO2018236653A1/en not_active Ceased
- 2018-06-14 KR KR1020207001707A patent/KR102353260B1/ko active Active
- 2018-06-14 JP JP2019570044A patent/JP7018970B2/ja active Active
- 2018-06-15 TW TW107120671A patent/TWI752237B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020524276A (ja) | 2020-08-13 |
| EP3635488A4 (en) | 2021-04-28 |
| TW201905586A (zh) | 2019-02-01 |
| EP3635488A1 (en) | 2020-04-15 |
| CN110770654A (zh) | 2020-02-07 |
| JP7018970B2 (ja) | 2022-02-14 |
| CN110770654B (zh) | 2022-11-18 |
| TWI752237B (zh) | 2022-01-11 |
| KR102353260B1 (ko) | 2022-01-18 |
| WO2018236653A1 (en) | 2018-12-27 |
| US11112369B2 (en) | 2021-09-07 |
| US20180364179A1 (en) | 2018-12-20 |
| KR20200010585A (ko) | 2020-01-30 |
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