TWI749747B - An apparatus and method for semiconductor devices - Google Patents

An apparatus and method for semiconductor devices Download PDF

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TWI749747B
TWI749747B TW109130075A TW109130075A TWI749747B TW I749747 B TWI749747 B TW I749747B TW 109130075 A TW109130075 A TW 109130075A TW 109130075 A TW109130075 A TW 109130075A TW I749747 B TWI749747 B TW I749747B
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support structure
bracket
buffer
carrier
supporting
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TW109130075A
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TW202211344A (en
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呂秉修
黃泰源
盧昱霖
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日月光半導體製造股份有限公司
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Abstract

An apparatus for a semiconductor device comprises a box body, at least one first support structure, and a buffer structure. The at least one first support structure is disposed within the box body and extends along a first direction. The at least one first support structure is supported by the box body. The buffer structure surrounds the at least one first support structure and rotates with respect to the at least one first support structure.

Description

一種用於半導體裝置之設備及方法Equipment and method for semiconductor device

本發明大體上係關於用於製造半導體裝置之設備及方法。 The present invention generally relates to equipment and methods for manufacturing semiconductor devices.

當前半導體封裝製程中,於製造出半導體裝置(例如晶片)後,將半導體裝置貼附於基板上以進行模封操作。接著,將基板置放於剛質載具上送至壓力烤箱進行高溫加熱,以使模封化合物固化,並排出晶片下方之殘留氣體。 In the current semiconductor packaging process, after a semiconductor device (such as a wafer) is manufactured, the semiconductor device is attached to a substrate to perform a molding operation. Then, the substrate is placed on a rigid carrier and sent to a pressure oven for high-temperature heating, so that the molding compound is cured and the residual gas under the wafer is discharged.

然而,在將剛質載具傳送至壓力烤箱之過程中,剛質載具會與壓力烤箱中之金屬支撐桿摩擦而產生金屬顆粒。金屬顆粒可能會掉落並附著於模封化合物上,致使在後續半導體封裝之金屬製程中產生電性連接問題(例如,短路)。 However, in the process of transferring the rigid carrier to the pressure oven, the rigid carrier will rub against the metal support rod in the pressure oven to generate metal particles. The metal particles may fall off and adhere to the molding compound, causing electrical connection problems (for example, short circuits) in the subsequent metal manufacturing process of semiconductor packaging.

在一態樣中,一種用於半導體裝置之設備包含一箱體、至少一第一支撐結構、及一緩衝結構。該至少一第一支撐結構係設置於該箱體內並沿一第一方向延伸,該至少一第一支撐結構被該箱體所支撐。該緩衝結構係環繞該至少一第一支撐結構且可相對於該至少一第一支撐結構轉動。 In one aspect, a device for a semiconductor device includes a box, at least one first support structure, and a buffer structure. The at least one first support structure is arranged in the box body and extends along a first direction, and the at least one first support structure is supported by the box body. The buffer structure surrounds the at least one first supporting structure and is rotatable relative to the at least one first supporting structure.

在一態樣中,一種用於半導體封裝之設備包含一箱體、一支撐結構及一緩衝結構。該箱體包含一第一支架、複數對第二支架及一第三支架,該複數對第二支架連接於該第一支架及該第三支架之間。該支撐結構係設置於該複數對第二支架中之一對第二支架之間。該支撐結構包含一第一支撐結構及至少一第二支撐結構。該第一支撐結構係平行於該第一支架及該第三支架而設置。該至少一第二支撐結構係與該第一支撐結構正交且一體成形,且該至少一第二支撐結構自該第一支撐結構向該複數對第二支架中之一對延伸。該緩衝結構係環繞該至少一第二支撐結構且可相對於該至少一第二支撐結構轉動。 In one aspect, a device for semiconductor packaging includes a box, a support structure, and a buffer structure. The box body includes a first bracket, a plurality of pairs of second brackets, and a third bracket, and the plurality of pairs of second brackets are connected between the first bracket and the third bracket. The supporting structure is arranged between one pair of second brackets among the plurality of pairs of second brackets. The supporting structure includes a first supporting structure and at least one second supporting structure. The first support structure is arranged parallel to the first support and the third support. The at least one second support structure is orthogonal to the first support structure and is integrally formed, and the at least one second support structure extends from the first support structure to one of the plurality of second brackets. The buffer structure surrounds the at least one second support structure and is rotatable relative to the at least one second support structure.

在一態樣中,一種用於製造半導體裝置之方法包含:提供一基板,該基板上設置有一半導體裝置;提供一載具用以承載該基板;提供一支撐結構及一緩衝結構,其中該支撐結構包含至少一第一支撐結構,且該緩衝結構環繞該至少一第一支撐結構且可相對於該至少一第一支撐結構轉動;及將該載具傳送至該至少一第一支撐結構上,其中該載具係直接與該緩衝結構接觸而進行傳送。 In one aspect, a method for manufacturing a semiconductor device includes: providing a substrate on which a semiconductor device is disposed; providing a carrier for supporting the substrate; providing a support structure and a buffer structure, wherein the support The structure includes at least one first support structure, and the buffer structure surrounds the at least one first support structure and is rotatable relative to the at least one first support structure; and transfers the carrier to the at least one first support structure, The carrier is directly in contact with the buffer structure for transmission.

本發明之其他態樣、優勢及特徵將在審閱整個申請案之後變得顯而易見,該申請案包括以下部分:圖式簡單說明、實施方式及申請專利範圍。 Other aspects, advantages, and features of the present invention will become apparent after reviewing the entire application. The application includes the following parts: a brief description of the drawings, an implementation mode, and the scope of the patent application.

1:設備 1: equipment

2:電控系統 2: Electronic control system

3:安全機制系統 3: Safety mechanism system

4:抽風系統 4: Ventilation system

5:升溫系統 5: Heating system

6:電力系統 6: Power system

7:加壓系統 7: Pressurized system

8:冷卻系統 8: Cooling system

10:箱體 10: Cabinet

11:支撐結構 11: Supporting structure

12:緩衝結構 12: Buffer structure

13:架體 13: Frame

101:第一支架 101: The first bracket

101a:第一部分 101a: Part One

101b:第二部分 101b: part two

101c:第三部分 101c: Part Three

102:第二支架 102: second bracket

103:第三支架 103: third bracket

103a:第一部分 103a: Part One

103b:第二部分 103b: Part Two

103c:第三部分 103c: Part Three

111:第二支撐結構 111: The second support structure

112:至少一第一支撐結構 112: At least one first support structure

圖1說明根據本發明之一些實施例之用於製造半導體裝置的系統方塊圖;圖2A說明根據本發明之一些實施例之用於製造半導體裝置的設備的 立體圖;圖2B說明根據本發明之一些實施例之用於製造半導體裝置的設備的上視圖;圖2C說明根據本發明之一些實施例之用於製造半導體裝置的設備的局部放大示意圖;圖2D說明根據本發明之一些實施例之用於製造半導體裝置的設備的前視圖;圖3A至圖3E說明根據本發明之一些實施例之製造半導體裝置封裝的方法。 FIG. 1 illustrates a block diagram of a system for manufacturing a semiconductor device according to some embodiments of the present invention; FIG. 2A illustrates an apparatus for manufacturing a semiconductor device according to some embodiments of the present invention A perspective view; FIG. 2B illustrates a top view of an apparatus for manufacturing a semiconductor device according to some embodiments of the present invention; FIG. 2C illustrates a partial enlarged schematic view of an apparatus for manufacturing a semiconductor device according to some embodiments of the present invention; FIG. 2D illustrates A front view of an apparatus for manufacturing a semiconductor device according to some embodiments of the present invention; FIGS. 3A to 3E illustrate a method of manufacturing a semiconductor device package according to some embodiments of the present invention.

貫穿圖式及實施方式使用共同參考編號以指示相同或相似組件。自結合附圖的以下詳細描述將更容易理解本發明之實施例。 Common reference numbers are used throughout the drawings and embodiments to indicate the same or similar components. It will be easier to understand the embodiments of the present invention from the following detailed description in conjunction with the accompanying drawings.

對於如相關聯圖中所展示之組件之定向,關於某一組件或某一組組件,或一組件或一組組件之某一平面而指定空間描述,諸如「在…之上」、「在…之下」、「上」、「左」、「右」、「下」、「頂部」、「底部」、「垂直」、「水平」、「側」、「較高」、「下部」、「上部」、「在…上方」、「在…下方」等等。應理解,本文中所使用之空間描述僅出於說明之目的,且本文中所描述之結構之實際實施可以任何定向或方式在空間上配置,其限制條件為本發明之實施例之優點不因此配置而有偏差。 For the orientation of components as shown in the associated figure, a spatial description is specified for a certain component or a certain group of components, or a certain plane of a component or a group of components, such as "above", "on... "Bottom", "Top", "Left", "Right", "Bottom", "Top", "Bottom", "Vertical", "Horizontal", "Side", "Higher", "Lower", " "Upper", "above", "below" and so on. It should be understood that the spatial description used in this article is for illustrative purposes only, and the actual implementation of the structure described in this article can be spatially arranged in any orientation or manner, and the limitation is that the advantages of the embodiments of the present invention are not therefore The configuration is biased.

圖1說明根據本發明之用於製造半導體裝置的系統方塊圖。該系統包括用於製造半導體裝置之設備1、電控系統2、安全機制系統3、抽風系統4、升溫系統5、電力系統6、加壓系統7、及冷卻系統8。在一些實施例中,設備1係為烤箱。設備1可為壓力烤箱。 FIG. 1 illustrates a block diagram of a system for manufacturing a semiconductor device according to the present invention. The system includes equipment for manufacturing semiconductor devices 1, an electric control system 2, a safety mechanism system 3, a ventilation system 4, a heating system 5, a power system 6, a pressure system 7, and a cooling system 8. In some embodiments, the device 1 is an oven. The device 1 can be a pressure oven.

電控系統2係耦合至設備1以訊號通信來控制設備1,從而可調整其他系統及元件。電控系統2包括可編程邏輯控制器(PLC)。PLC可包括功能模組、訊號模組、通信模組、介面模組。藉由該等模組,可以介面調控功能、訊號而與其他系統進行通信。 The electronic control system 2 is coupled to the device 1 to control the device 1 through signal communication, so that other systems and components can be adjusted. The electronic control system 2 includes a programmable logic controller (PLC). The PLC may include functional modules, signal modules, communication modules, and interface modules. With these modules, it is possible to interface control functions and signals to communicate with other systems.

安全機制系統3係耦合至設備1以確認設備及製程安全。安全機制系統3可控制電磁脈衝(EMP)、膛門、溫度、及壓力。在一些實施例中,藉由控制膛門,安全機制系統3可進一步控制開關雙觸發按鈕、門位感測器、光閘感測器等裝置。關於控制設備1之溫度之高低範圍及精細調整,安全機制系統3可進一步控制主控點控溫、感溫線監控、超溫保護器(EGO)斷電機械式觸發等功能。藉此,安全機制系統3不僅可控制大幅度之溫度範圍,亦可精確調整溫度並維持於某個特定溫度,且在溫度過高時,可藉由機械式斷電確保安全。安全機制系統3可進一步調整排氣閥控壓、洩壓、及安全閥洩壓,從而控制及調整設備1之壓力。 The safety mechanism system 3 is coupled to the equipment 1 to confirm the safety of the equipment and the process. The safety mechanism system 3 can control electromagnetic pulse (EMP), chamber door, temperature, and pressure. In some embodiments, by controlling the chamber door, the safety mechanism system 3 can further control devices such as switch double trigger buttons, door position sensors, shutter sensors and the like. Regarding the temperature range and fine adjustment of the control device 1, the safety mechanism system 3 can further control the main control point temperature control, temperature sensing line monitoring, and over-temperature protector (EGO) power-off mechanical triggering functions. In this way, the safety mechanism system 3 can not only control a large temperature range, but also accurately adjust the temperature and maintain it at a specific temperature. When the temperature is too high, the safety can be ensured by mechanical power-off. The safety mechanism system 3 can further adjust the pressure control, pressure relief of the exhaust valve, and pressure relief of the safety valve, thereby controlling and adjusting the pressure of the equipment 1.

抽風系統4係耦合至設備1以經由抽風管進行抽風操作。抽風系統4可包含風扇馬達模組促進熱循環以增加熱均勻性。升溫系統5係耦合至設備1以經由加熱模組對設備1進行加熱。電力系統6係耦合至設備1以220伏特之交流電進行三相控制來對設備1供應電力。 The air extraction system 4 is coupled to the device 1 to perform air extraction operation via an air extraction pipe. The ventilation system 4 may include a fan motor module to promote thermal circulation to increase thermal uniformity. The heating system 5 is coupled to the device 1 to heat the device 1 through a heating module. The power system 6 is coupled to the device 1 to perform three-phase control with 220 volt alternating current to supply power to the device 1.

加壓系統7係耦合至設備1以對設備1進行增壓操作。加壓系統7包括儲氣筒模組及增壓缸。冷卻系統8係耦合至設備1以對設備1進行冷卻操作。冷卻系統8包括水幫浦及排氣過濾器。 The pressurizing system 7 is coupled to the device 1 to perform pressurizing operations on the device 1. The pressurizing system 7 includes an air reservoir module and a pressurizing cylinder. The cooling system 8 is coupled to the device 1 to perform cooling operations on the device 1. The cooling system 8 includes a water pump and an exhaust filter.

圖2A說明根據本發明之用於製造半導體裝置的設備1的立體圖。設備1包括箱體10及架體13。架體13係設置於箱體10中並連接至箱體10。架體13係由箱體10所支撐。在一些實施例中,箱體10係包括金 屬。箱體10可包括不鏽鋼。箱體10之材料與結構係可耐高溫及增加熱流均勻性。 FIG. 2A illustrates a perspective view of an apparatus 1 for manufacturing a semiconductor device according to the present invention. The equipment 1 includes a box body 10 and a frame body 13. The frame body 13 is arranged in the box body 10 and connected to the box body 10. The frame 13 is supported by the box 10. In some embodiments, the box 10 includes gold Genus. The box body 10 may include stainless steel. The material and structure of the box body 10 can withstand high temperature and increase the uniformity of heat flow.

箱體10包括第一支架101、第二支架102、及第三支架103。第二支架102連接於第一支架101與第三支架103之間。在一些實施例中,第一支架101為上部支架。第三支架103為下部支架。第三支架103之結構係類似於第一支架101。第三支架103之結構係可對稱於第一支架101設置。第三支架103下可具有底盤。 The box body 10 includes a first bracket 101, a second bracket 102, and a third bracket 103. The second bracket 102 is connected between the first bracket 101 and the third bracket 103. In some embodiments, the first bracket 101 is an upper bracket. The third bracket 103 is a lower bracket. The structure of the third bracket 103 is similar to that of the first bracket 101. The structure of the third bracket 103 can be arranged symmetrically to the first bracket 101. The third bracket 103 may have a chassis under it.

第一支架101具有第一部分101a、第二部分101b、及第三部分101c。第一部份101a為上部外圍支架。第一部份101a可為矩型或長方形。第二部分101b與第三部分101c係為正交設置。第二部分101b係自第一部份101a之一端(例如上端)延伸至另一相對端(例如下端)。第三部分101c係自第一部份101a之一端(例如左端)延伸至另一相對端(例如右端)。在一些實施例中,第二部分101b與第三部分101c之交會處為第一部份101a之中心點。第一部分101a、第二部分101b、及第三部分101c係一體成形。 The first bracket 101 has a first part 101a, a second part 101b, and a third part 101c. The first part 101a is the upper peripheral bracket. The first part 101a can be rectangular or rectangular. The second part 101b and the third part 101c are arranged orthogonally. The second part 101b extends from one end (for example, the upper end) of the first part 101a to the other opposite end (for example, the lower end). The third part 101c extends from one end (for example, the left end) of the first part 101a to the other opposite end (for example, the right end). In some embodiments, the intersection of the second part 101b and the third part 101c is the center point of the first part 101a. The first part 101a, the second part 101b, and the third part 101c are integrally formed.

類似於第一支架101,第三支架103具有第一部分103a、第二部分103b、及第三部分103c。第一部份103a為下部外圍支架。第一部份103a可為矩型或長方形。第二部分103b與第三部分103c係為正交設置。第二部分103b係自第一部份103a之一端(例如上端)延伸至另一相對端(例如下端)。第三部分103c係自第一部份103a之一端(例如左端)延伸至另一相對端(例如右端)。在一些實施例中,第二部分103b與第三部分103c之交會處為第一部份103a之中心點。第一部分103a、第二部分103b、及第三部分103c係一體成形。 Similar to the first bracket 101, the third bracket 103 has a first portion 103a, a second portion 103b, and a third portion 103c. The first part 103a is the lower peripheral bracket. The first part 103a can be rectangular or rectangular. The second part 103b and the third part 103c are arranged orthogonally. The second part 103b extends from one end (for example, the upper end) of the first part 103a to the other opposite end (for example, the lower end). The third part 103c extends from one end (for example, the left end) of the first part 103a to the other opposite end (for example, the right end). In some embodiments, the intersection of the second part 103b and the third part 103c is the center point of the first part 103a. The first part 103a, the second part 103b, and the third part 103c are integrally formed.

複數個第二支架102設置於第一支架101、第三支架103之周圍處。複數個第二支架102可對稱設置於第一支架101、第三支架103之兩側(例如左側及右側),且兩側之複數個第二支架102之各者以一間距分隔開,以維持均勻的熱循環。第二支架102係以偶數數量成對地設置於第一支架101、第三支架103之兩側。在一些實施例中,該間距可以是在約140毫米至約180毫米。在另一些實施例中,兩側可各設置有至少兩個第二支架102。在一些實施例中,兩側可各設置有四個第二支架102。在其他實施例中,兩側可各設置有六個第二支架102。在考慮不同熱循環情況下,第二支架102之數量可據以調整。 A plurality of second brackets 102 are arranged around the first bracket 101 and the third bracket 103. The plurality of second brackets 102 can be symmetrically arranged on both sides of the first bracket 101 and the third bracket 103 (for example, the left side and the right side), and each of the plurality of second brackets 102 on both sides is separated by a distance to Maintain a uniform thermal cycle. The second bracket 102 is arranged in pairs on both sides of the first bracket 101 and the third bracket 103 in an even number. In some embodiments, the pitch may be about 140 mm to about 180 mm. In other embodiments, at least two second brackets 102 may be provided on both sides. In some embodiments, four second brackets 102 may be provided on both sides. In other embodiments, six second brackets 102 may be provided on both sides. Considering different thermal cycles, the number of second brackets 102 can be adjusted accordingly.

架體13包括支撐結構11及緩衝結構12。架體13係設置於複數個第二支架102中之一對第二支架102之間。支撐結構11之材料不同於緩衝結構12之材料。支撐結構11之材料包括金屬。支撐結構11之材料可包括不鏽鋼。緩衝結構係為陶瓷套筒或陶瓷套環。緩衝結構12之材料可包括陶瓷材料。 The frame 13 includes a supporting structure 11 and a buffer structure 12. The frame body 13 is disposed between one pair of second frames 102 among the plurality of second frames 102. The material of the support structure 11 is different from the material of the buffer structure 12. The material of the support structure 11 includes metal. The material of the support structure 11 may include stainless steel. The buffer structure is a ceramic sleeve or a ceramic collar. The material of the buffer structure 12 may include ceramic materials.

支撐結構11係連接於複數個第二支架102中之一對第二支架102之間。在一些實施例中,支撐結構11可接合至複數個第二支架102。為組裝緩衝結構12至支撐結構11之複數個第一支撐結構112(請見圖2B),支撐結構11與複數個第二支架102可以非為一體成形。 The supporting structure 11 is connected between one pair of the second brackets 102 among the plurality of second brackets 102. In some embodiments, the supporting structure 11 may be joined to a plurality of second brackets 102. In order to assemble the buffer structure 12 to the plurality of first support structures 112 of the support structure 11 (see FIG. 2B), the support structure 11 and the plurality of second brackets 102 may not be integrally formed.

圖2B說明根據本發明之設備1的上視圖。架體13係設置於第一支架101下方。架體13之支撐結構11包括第二支撐結構111及複數個第一支撐結構112。在一些實施例中,支撐結構11係為魚骨狀支撐架。複數個第一支撐結構112係對應於複數個第一支架102而設置。複數個第一支撐結構112連接第二支撐結構111。第二支撐結構111設置於第一支架 101之第二部分101b之下方。第二支撐結構111平行於第一支架101及第三支架103而設置。複數個第一支撐結構112與第二支撐結構111正交且一體成形。複數個第一支撐結構112之各者自第二支撐結構111向複數對第二支架102中之一對延伸而被箱體10所支撐。複數個第一支撐結構112之各者係間隔可約180毫米至約220毫米。第一支撐結構112之寬度約570毫米至約650毫米。該間隔及該寬度可基於需求而對架體13進行調配設計。 Figure 2B illustrates a top view of the device 1 according to the invention. The frame body 13 is arranged under the first bracket 101. The supporting structure 11 of the frame 13 includes a second supporting structure 111 and a plurality of first supporting structures 112. In some embodiments, the supporting structure 11 is a fishbone-shaped supporting frame. The plurality of first support structures 112 are arranged corresponding to the plurality of first supports 102. The plurality of first supporting structures 112 are connected to the second supporting structure 111. The second support structure 111 is arranged on the first support Below the second part 101b of 101. The second support structure 111 is arranged parallel to the first support 101 and the third support 103. The plurality of first supporting structures 112 and the second supporting structures 111 are orthogonal and integrally formed. Each of the plurality of first support structures 112 extends from the second support structure 111 to one of the plurality of pairs of second brackets 102 and is supported by the box body 10. The distance between each of the plurality of first supporting structures 112 may be about 180 mm to about 220 mm. The width of the first support structure 112 is about 570 mm to about 650 mm. The interval and the width can be configured and designed for the frame 13 based on requirements.

複數個第一支撐結構112之各者可具有二個緩衝結構12。該二個緩衝結構12係彼此以一間隙分隔開。該二個緩衝結構12可分別設置於第一支撐結構112之左側及右側。 Each of the plurality of first supporting structures 112 may have two buffer structures 12. The two buffer structures 12 are separated from each other by a gap. The two buffer structures 12 can be respectively arranged on the left and right sides of the first support structure 112.

圖2C說明根據本發明之設備1之架體13的局部放大示意圖。如圖2C所示,緩衝結構12環繞至少一第一支撐結構112且可相對於至少一第一支撐結構112轉動。緩衝結構12與至少一第一支撐結構112之間具有間隙從而減少緩衝結構12與至少一第一支撐結構112之間的摩擦力。 2C illustrates a partial enlarged schematic view of the frame 13 of the device 1 according to the present invention. As shown in FIG. 2C, the buffer structure 12 surrounds the at least one first support structure 112 and is rotatable relative to the at least one first support structure 112. There is a gap between the buffer structure 12 and the at least one first support structure 112 to reduce the friction between the buffer structure 12 and the at least one first support structure 112.

在一些實施例中,緩衝結構12與至少一第一支撐結構112之間可設置一減少摩擦結構,例如軸承,用以減少緩衝結構12與至少一第一支撐結構112之間磨損。軸承可為長條圓柱體、滾珠或其它適合的結構。 In some embodiments, a friction reducing structure, such as a bearing, may be provided between the buffer structure 12 and the at least one first support structure 112 to reduce wear between the buffer structure 12 and the at least one first support structure 112. The bearing can be a long cylindrical body, balls or other suitable structures.

圖2D說明根據本發明之設備1的前視圖。箱體1中包括複數個架體13。複數個架體13之各者間之間距可以是在約0.7厘米至約1.5厘米。各架體13上可放置載具。該間距可確保多個載具之間之熱循環之均勻性。 Figure 2D illustrates a front view of the device 1 according to the invention. The box 1 includes a plurality of frames 13. The distance between each of the plurality of frame bodies 13 may be about 0.7 cm to about 1.5 cm. Carriers can be placed on each frame 13. The spacing can ensure the uniformity of the thermal cycle between multiple carriers.

圖3A至圖3E說明根據本發明之製造半導體裝置封裝的方法之一些實施例。 3A to 3E illustrate some embodiments of the method of manufacturing a semiconductor device package according to the present invention.

參看圖3A,用於製造半導體裝置封裝的方法包括提供基板31。半導體裝置32係設置於基板31上。基板31可包括導電通孔(為簡化起見,未顯示於圖中)。基板31可於其上表面或下表面上形成導電端子(為簡化起見,未顯示於圖中)。基板31可為印刷電路板、中介層、或封裝基板。 Referring to FIG. 3A, a method for manufacturing a semiconductor device package includes providing a substrate 31. The semiconductor device 32 is provided on the substrate 31. The substrate 31 may include conductive vias (for simplicity, not shown in the figure). The substrate 31 may have conductive terminals formed on its upper surface or lower surface (for simplicity, not shown in the figure). The substrate 31 may be a printed circuit board, an interposer, or a packaging substrate.

參看圖3B,將包封層33設置於基板31上以包封基板31及半導體裝置32。包封層33可為模封化合物。包封層33包括樹脂。 Referring to FIG. 3B, the encapsulation layer 33 is disposed on the substrate 31 to encapsulate the substrate 31 and the semiconductor device 32. The encapsulation layer 33 may be a molding compound. The encapsulation layer 33 includes resin.

參看圖3C,提供一載具14用以承載基板31。載具14包括金屬。載具14包括不鏽鋼。載具14可為剛板、剛質基板。 Referring to FIG. 3C, a carrier 14 is provided for supporting the substrate 31. The carrier 14 includes metal. The carrier 14 includes stainless steel. The carrier 14 can be a rigid board or a rigid substrate.

在一些實施例中,基板31自身之下部分亦可包含金屬層。基板31之金屬層在放置於載具14時,可能因摩擦而掉落金屬顆粒。 In some embodiments, the lower part of the substrate 31 itself may also include a metal layer. When the metal layer of the substrate 31 is placed on the carrier 14, metal particles may drop due to friction.

提供一設備1。設備1具有箱體10及架體13。架體13包括支撐結構11及緩衝結構12。支撐結構11包括第二支撐結構111及複數個第一支撐結構112。緩衝結構12環繞至少一第二支撐結構112且可相對於至少一第一支撐結構112轉動。緩衝結構12與至少一第一支撐結構112之間具有間隙從而減少緩衝結構12與至少一第一支撐結構112之間的摩擦力及損耗。緩衝結構12相對於至少一第一支撐結構112轉動,載具14與架體13之緩衝結構12接觸,由於緩衝結構12會進行轉動,故可避免金屬間摩擦產生金屬顆粒落至包封層33上。 Provide a device 1. The device 1 has a box body 10 and a frame body 13. The frame 13 includes a supporting structure 11 and a buffer structure 12. The supporting structure 11 includes a second supporting structure 111 and a plurality of first supporting structures 112. The buffer structure 12 surrounds the at least one second support structure 112 and is rotatable relative to the at least one first support structure 112. There is a gap between the buffer structure 12 and the at least one first support structure 112 to reduce friction and loss between the buffer structure 12 and the at least one first support structure 112. The buffer structure 12 rotates relative to the at least one first support structure 112, and the carrier 14 is in contact with the buffer structure 12 of the frame 13. Since the buffer structure 12 rotates, it can prevent metal particles from falling onto the encapsulation layer 33 due to friction between metals. superior.

將載具14傳送至架體13上。載具14直接接觸緩衝結構12。載具14經由緩衝結構12而與支撐結構11間隔開。載具14未接觸支撐結構11。載具14經由緩衝結構12傳送至箱體10中。緩衝結構12之材料包括陶瓷材料,故可減少緩衝結構12與載具14之間之摩擦力,且可避免載具14 在傳送期間與架體13摩擦產生金屬顆粒而落至包封層33上或落至下方之其他基板上。 The carrier 14 is transferred to the frame 13. The carrier 14 directly contacts the buffer structure 12. The carrier 14 is spaced apart from the support structure 11 via the buffer structure 12. The carrier 14 does not contact the support structure 11. The carrier 14 is transferred to the box body 10 via the buffer structure 12. The material of the buffer structure 12 includes ceramic materials, so the friction between the buffer structure 12 and the carrier 14 can be reduced, and the carrier 14 can be avoided During the transfer, metal particles are generated by friction with the frame body 13 and fall on the encapsulation layer 33 or on other substrates below.

待載具14整體傳送至設備1內之後,對載具14上之基板31、半導體裝置32、及包封層33進行加熱以使包封層33固化。加熱操作之溫度範圍係自約150℃至200℃。於加熱操作過程中,可提供一風扇馬達模組促進箱體10內之熱循環以增加熱均勻性。 After the entire carrier 14 is transferred into the device 1, the substrate 31, the semiconductor device 32, and the encapsulation layer 33 on the carrier 14 are heated to cure the encapsulation layer 33. The temperature range of the heating operation is from about 150°C to 200°C. During the heating operation, a fan motor module can be provided to promote heat circulation in the box 10 to increase heat uniformity.

此外,在特定實施例中,箱體10之第二部分102及架體13之第一支撐結構112之間之間隔可經設計以使促進熱循環以增加熱均勻性。複數個架體13之間之間隔可經設計以使促進熱循環以增加熱均勻性。箱體10可具有偶數對第二部分102。架體13可具有偶數個第一支撐結構112。在特定實施例中,架體13包括四個第一支撐結構112可足以支撐載具14,從而避免載具14彎翹而錯位影響到下一層載具。 In addition, in certain embodiments, the interval between the second portion 102 of the box body 10 and the first support structure 112 of the frame body 13 may be designed to promote thermal cycling and increase thermal uniformity. The interval between the plurality of frame bodies 13 can be designed to promote thermal circulation to increase thermal uniformity. The box body 10 may have an even-numbered pair of second parts 102. The frame 13 may have an even number of first supporting structures 112. In a specific embodiment, the frame body 13 includes four first supporting structures 112 which can be sufficient to support the carrier 14 so as to prevent the carrier 14 from bending and misalignment affecting the carrier of the next layer.

在一些實施例中,載具14本身可能有些微彎翹。由於架體13之支撐結構11之複數個第一支撐結構112之各者可具有二個緩衝結構12,且該二個緩衝結構12係以一間隙彼此分隔,因此可在傳送載具14的過程中,藉由該間隙而觀察載具14之傳送位置,從而避免載具14錯位。 In some embodiments, the carrier 14 itself may be slightly warped. Since each of the plurality of first support structures 112 of the support structure 11 of the frame 13 can have two buffer structures 12, and the two buffer structures 12 are separated from each other by a gap, the carrier 14 can be transported In this way, the conveying position of the carrier 14 is observed through the gap, so as to avoid the misalignment of the carrier 14.

參看圖3D,經由若干封裝操作(例如挖孔操作、電鍍金屬操作、圖案化操作、加熱操作、加壓操作),形成封裝34。 Referring to FIG. 3D, the package 34 is formed through a number of packaging operations (for example, a drilling operation, a metal plating operation, a patterning operation, a heating operation, and a pressing operation).

參看圖3E,在一些實施例中,可進一步經由若干封裝操作(例如半導體安裝操作、模封操作、植球操作),形成具有額外半導體裝置35及被動元件之封裝36,其中之模封操作可利用圖3C進行固化操作。 Referring to FIG. 3E, in some embodiments, a package 36 with additional semiconductor devices 35 and passive components can be formed through a number of packaging operations (such as semiconductor mounting operations, mold sealing operations, and ball planting operations), wherein the mold sealing operation can be The curing operation is performed using FIG. 3C.

由本案所揭示態樣、實例及/或實施中之至少一者提供的一個特定優點為,本案所請之緩衝結構之材料與載具不同,故緩衝結構在與 剛質載具接觸時可避免產生金屬顆粒。另外,由於緩衝結構與至少一第一支撐結構之間具有間隙且可相對於至少一第一支撐結構轉動,故可促進剛質載具在傳送進入箱體時減少摩擦力之阻礙,從而使製程更加順暢。 A particular advantage provided by at least one of the aspects, examples, and/or implementations disclosed in this case is that the material of the buffer structure requested in this case is different from that of the carrier, so the buffer structure is different from that of the carrier. Metal particles can be avoided when the rigid carrier is in contact. In addition, since there is a gap between the buffer structure and the at least one first support structure and can rotate relative to the at least one first support structure, it can promote the rigid carrier to reduce frictional obstacles when transporting into the box, so that the manufacturing process Smoother.

除非上下文另外明確規定,否則如本文所用,單數術語「一(a/an)」及「該」可包括複數個指示物。在對一些實施例之描述中,提供「在」另一組件「上」之組件可涵蓋前一組件直接在後一組件上(例如,與後一組件實體接觸)的狀況以及一或多個介入組件位於前一組件與後一組件之間的狀況。 Unless the context clearly dictates otherwise, as used herein, the singular terms "a/an" and "the" may include plural indicators. In the description of some embodiments, the provision of a component "on" another component may cover the situation where the previous component is directly on the next component (for example, physically contacting the latter component) and one or more interventions The condition of a component between the previous component and the next component.

如本文中所使用,術語「大致」、「實質上」、「大約」及「約略」用以描述及考慮小變化。當用於連接一專案或環境時,所述術語可以指為所述項目或環境正確發生之範例,以及所述專案及環境發生於一接近的近似值之範例。舉例來說,所述術語可以指小於或等於±10%,例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%或小於或等於±0.05%。例如,如果第一數值在小於或等於第二數值的±10%的變化範圍內,則第一數值可以被視為是“實質上”與第二數值相同,例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%。 As used herein, the terms "approximately", "substantially", "approximately" and "approximately" are used to describe and consider small changes. When used to connect a project or environment, the term can refer to an example where the project or environment occurs correctly, and an example where the project and environment occur at a close approximation. For example, the term may refer to less than or equal to ±10%, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1 %, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the first value is within a range of ±10% less than or equal to the second value, the first value can be regarded as "substantially" the same as the second value, for example, less than or equal to ±5%, less than Or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%.

另外,數量、比率、和其他數值有時在本文中以範圍格式呈現。應當理解,為了方便和簡潔而使用這種範圍格式,且應靈活地理解為包括明確地指定為範圍的限制的數值,並且如同明確指定每個數值和子範圍般,還包括在該範圍內包括的所有單獨的數值或子範圍。 In addition, quantities, ratios, and other numerical values are sometimes presented herein in a range format. It should be understood that this range format is used for convenience and brevity, and should be flexibly understood to include values that are explicitly designated as limits of the range, and as if each value and sub-range are clearly designated, it also includes those included in the range. All individual values or subranges.

儘管本發明已參看其特定實施例進行描述及說明,但此等描述及說明並不為限制性的。熟習此項技術者應理解,在不脫離如由所附申請專利範圍界定的本發明之真實精神及範疇的情況下,可作出各種改變且可取代等效物。說明可不必按比例繪製。歸因於製造程序及容限,本發明中之藝術再現與實際設備之間可存在區別。可存在並未特定說明的本發明之其他實施例。應將本說明書及圖式視為說明性而非限制性的。可做出修改,以使特定情形、材料、物質組成、方法或程序適應於本發明之目標、精神及範疇。所有此類修改意欲在此處附加之申請專利範圍之範疇內。雖然已參考按特定次序執行之特定操作描述本文中所揭示的方法,但應理解,在不脫離本發明之教示的情況下,可組合、再細分,或重新定序此等操作以形成等效方法。因此,除非本文中特定指示,否則操作之次序及分組並非限制。 Although the present invention has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations are not restrictive. Those familiar with the art should understand that various changes can be made and equivalents can be substituted without departing from the true spirit and scope of the present invention as defined by the scope of the attached patent application. The description does not have to be drawn to scale. Due to manufacturing procedures and tolerances, there may be a difference between the artistic reproduction in the present invention and the actual equipment. There may be other embodiments of the invention that are not specifically described. The description and drawings should be regarded as illustrative rather than restrictive. Modifications can be made to adapt specific situations, materials, material compositions, methods, or procedures to the objectives, spirit, and scope of the present invention. All such modifications are intended to be within the scope of the patent application appended here. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations can be combined, subdivided, or reordered to form equivalents without departing from the teachings of the present invention method. Therefore, unless specifically indicated herein, the order and grouping of operations are not limiting.

1:設備 1: equipment

10:箱體 10: Cabinet

11:支撐結構 11: Supporting structure

12:緩衝結構 12: Buffer structure

13:架體 13: Frame

101:第一支架 101: The first bracket

101a:第一部分 101a: Part One

101b:第二部分 101b: part two

101c:第三部分 101c: Part Three

102:第二支架 102: second bracket

103:第三支架 103: third bracket

103a:第一部分 103a: Part One

103b:第二部分 103b: Part Two

103c:第三部分 103c: Part Three

Claims (10)

一種用於半導體裝置之設備,其包含: 一箱體; 至少一第一支撐結構,其設置於該箱體內並沿一第一方向延伸,該至少一第一支撐結構被該箱體所支撐;及 一緩衝結構,其環繞該至少一第一支撐結構且可相對於該至少一第一支撐結構轉動。 A device for semiconductor devices, which includes: A box At least one first supporting structure arranged in the box body and extending along a first direction, the at least one first supporting structure being supported by the box body; and A buffer structure surrounds the at least one first supporting structure and is rotatable relative to the at least one first supporting structure. 如請求項1之設備,其進一步包含一第二支撐結構,其中該第二支撐結構沿一第二方向延伸並與該至少一第一支撐結構連接。The device of claim 1, further comprising a second support structure, wherein the second support structure extends along a second direction and is connected to the at least one first support structure. 如請求項1之設備,其中該緩衝結構之材料係不同於該至少一第一支撐結構之材料,其中該緩衝結構包含陶瓷套筒,且該至少一第一支撐結構之材料包含金屬。The device of claim 1, wherein the material of the buffer structure is different from the material of the at least one first support structure, wherein the buffer structure includes a ceramic sleeve, and the material of the at least one first support structure includes metal. 如請求項1之設備,其中該緩衝結構與該至少一第一支撐結構之間具有軸承。Such as the device of claim 1, wherein a bearing is provided between the buffer structure and the at least one first supporting structure. 如請求項1之設備,其中,該箱體包含一第一支架、複數對第二支架及一第三支架,該複數對第二支架連接於該第一支架及該第三支架之間。The device of claim 1, wherein the box body includes a first bracket, a plurality of pairs of second brackets, and a third bracket, and the plurality of pairs of second brackets are connected between the first bracket and the third bracket. 如請求項5之設備,其中該至少一第一支撐結構設置於該複數對第二支架中之一對第二支架之間。Such as the device of claim 5, wherein the at least one first support structure is disposed between one pair of second supports among the plurality of pairs of second supports. 一種用於製造半導體裝置之方法,其包含: 提供一基板,該基板上設置有一半導體裝置; 提供一載具用以承載該基板; 提供一支撐結構及一緩衝結構,其中該支撐結構包含至少一第一支撐結構,且該緩衝結構環繞該至少一第一支撐結構且可相對於該至少一第一支撐結構轉動;及 將該載具傳送至該至少一第一支撐結構上, 其中該載具係直接與該緩衝結構接觸而進行傳送。 A method for manufacturing a semiconductor device, which comprises: Providing a substrate on which a semiconductor device is arranged; Providing a carrier for carrying the substrate; Providing a support structure and a buffer structure, wherein the support structure includes at least one first support structure, and the buffer structure surrounds the at least one first support structure and is rotatable relative to the at least one first support structure; and Transferring the carrier to the at least one first supporting structure, The carrier is directly in contact with the buffer structure for transmission. 如請求項7之方法,其中該緩衝結構與該至少一第二支撐結構之間具有間隙。Such as the method of claim 7, wherein there is a gap between the buffer structure and the at least one second supporting structure. 如請求項7之方法,其進一步包含對該基板進行加熱,其中該加熱操作之溫度範圍係自約150 oC至200 oC。 The method of the requested item 7, further comprising heating the substrate, wherein the temperature range is the heating operation from 150 o C to about 200 o C. 如請求項9之方法,其進一步包含提供一風扇馬達模組促進熱循環以增加熱均勻性。Such as the method of claim 9, which further includes providing a fan motor module to promote thermal circulation to increase thermal uniformity.
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TW202022970A (en) * 2018-12-12 2020-06-16 日月光半導體製造股份有限公司 Pod for transporting a carrier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM472484U (en) * 2013-10-28 2014-02-21 Shuen Hwa Entpr Co Ltd Isothermal pressurized oven
WO2017220272A1 (en) * 2016-06-20 2017-12-28 Heraeus Noblelight Gmbh Substrate support element for a support rack
CN107560425A (en) * 2017-09-30 2018-01-09 志圣科技(广州)有限公司 Vacuum pressure baking box
CN109962020A (en) * 2017-12-14 2019-07-02 华为技术有限公司 A method of for encapsulating chip
TW202022970A (en) * 2018-12-12 2020-06-16 日月光半導體製造股份有限公司 Pod for transporting a carrier

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