TWI745654B - 用於確定微影光罩的焦點位置的方法及執行此方法的計量系統 - Google Patents

用於確定微影光罩的焦點位置的方法及執行此方法的計量系統 Download PDF

Info

Publication number
TWI745654B
TWI745654B TW108105655A TW108105655A TWI745654B TW I745654 B TWI745654 B TW I745654B TW 108105655 A TW108105655 A TW 108105655A TW 108105655 A TW108105655 A TW 108105655A TW I745654 B TWI745654 B TW I745654B
Authority
TW
Taiwan
Prior art keywords
imaging
intensity distribution
optical unit
determining
measurement area
Prior art date
Application number
TW108105655A
Other languages
English (en)
Chinese (zh)
Other versions
TW201941001A (zh
Inventor
馬庫斯 寇奇
德克 海爾維格
倫佐 坎培里
馬汀 迪耶左
Original Assignee
德商卡爾蔡司Ｓｍｔ有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商卡爾蔡司Ｓｍｔ有限公司 filed Critical 德商卡爾蔡司Ｓｍｔ有限公司
Publication of TW201941001A publication Critical patent/TW201941001A/zh
Application granted granted Critical
Publication of TWI745654B publication Critical patent/TWI745654B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
TW108105655A 2018-02-21 2019-02-20 用於確定微影光罩的焦點位置的方法及執行此方法的計量系統 TWI745654B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018202637.8A DE102018202637B4 (de) 2018-02-21 2018-02-21 Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens
DE102018202637.8 2018-02-21

Publications (2)

Publication Number Publication Date
TW201941001A TW201941001A (zh) 2019-10-16
TWI745654B true TWI745654B (zh) 2021-11-11

Family

ID=67482181

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108105655A TWI745654B (zh) 2018-02-21 2019-02-20 用於確定微影光罩的焦點位置的方法及執行此方法的計量系統

Country Status (6)

Country Link
US (1) US10564551B2 (enExample)
JP (1) JP6853843B2 (enExample)
KR (1) KR102227293B1 (enExample)
CN (1) CN110174816B (enExample)
DE (1) DE102018202637B4 (enExample)
TW (1) TWI745654B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10990019B2 (en) * 2019-04-09 2021-04-27 Kla Corporation Stochastic reticle defect dispositioning
TWI792285B (zh) * 2021-04-27 2023-02-11 財團法人國家實驗研究院 光譜影像演算的光譜影像自動對焦裝置
DE102021205328B3 (de) * 2021-05-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür
DE102022200372A1 (de) * 2022-01-14 2023-07-20 Carl Zeiss Smt Gmbh Verfahren zum Nachbilden von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012531042A (ja) * 2009-06-19 2012-12-06 ケーエルエー−テンカー・コーポレーション 極紫外線マスクブランクの欠陥検出のための検査システム及び方法
CN102834776A (zh) * 2010-03-30 2012-12-19 卡尔蔡司Smt有限责任公司 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2787699B2 (ja) * 1989-04-03 1998-08-20 株式会社ニコン 干渉パターンの強度測定方法および露光装置
JPH03155112A (ja) * 1989-11-13 1991-07-03 Nikon Corp 露光条件測定方法
US5300786A (en) * 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
JP2000021289A (ja) 1998-07-03 2000-01-21 Canon Inc 電子放出素子、電子源、画像形成装置及びそれらの製造方法
DE10220816A1 (de) 2002-05-10 2003-11-20 Zeiss Carl Microelectronic Sys Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
DE10220815A1 (de) 2002-05-10 2003-11-20 Zeiss Carl Microelectronic Sys Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
US6869739B1 (en) * 2003-01-28 2005-03-22 International Business Machines Corporation Integrated lithographic print and detection model for optical CD
US7084958B2 (en) * 2004-04-14 2006-08-01 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP2006275743A (ja) * 2005-03-29 2006-10-12 Matsushita Electric Ind Co Ltd 欠陥検査方法
TWI456267B (zh) * 2006-02-17 2014-10-11 卡爾蔡司Ｓｍｔ有限公司 用於微影投射曝光設備之照明系統
DE102008015631A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
DE102010029049B4 (de) 2010-05-18 2014-03-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
DE102010025033B4 (de) * 2010-06-23 2021-02-11 Carl Zeiss Smt Gmbh Verfahren zur Defekterkennung und Reparatur von EUV-Masken
US8994918B2 (en) 2010-10-21 2015-03-31 Nikon Corporation Apparatus and methods for measuring thermally induced reticle distortion
KR20140042781A (ko) 2011-01-11 2014-04-07 케이엘에이-텐코 코포레이션 Euv 이미징을 위한 장치 및 이의 이용 방법
DE102011086018A1 (de) * 2011-11-09 2013-05-16 Carl Zeiss Ag Verfahren und Anordnung zur Autofokussierung eines Mikroskops
DE102014018510A1 (de) * 2013-12-13 2015-06-18 Carl Zeiss Sms Gmbh Anordnung und Verfahren zur Charakterisierung von Photolithographie-Masken
CN106575088B (zh) 2014-07-22 2019-06-11 卡尔蔡司Smt有限责任公司 三维测量光刻掩模的3d空间像的方法
US10455137B2 (en) * 2014-07-28 2019-10-22 Orbotech Ltd. Auto-focus system
US9588440B2 (en) * 2015-02-12 2017-03-07 International Business Machines Corporation Method for monitoring focus in EUV lithography
DE102015213045B4 (de) * 2015-07-13 2018-05-24 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Positionsbestimmung von Strukturelementen einer photolithographischen Maske

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012531042A (ja) * 2009-06-19 2012-12-06 ケーエルエー−テンカー・コーポレーション 極紫外線マスクブランクの欠陥検出のための検査システム及び方法
CN102834776A (zh) * 2010-03-30 2012-12-19 卡尔蔡司Smt有限责任公司 具有对由掩模引起的成像像差的校正的操作投射曝光设备的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Rene A. Claus, et.al., "Aberration estimation using EUV mask roughness", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942214, 19 March 2015, page 942214-1~942214-6. *

Also Published As

Publication number Publication date
CN110174816B (zh) 2023-03-28
DE102018202637B4 (de) 2021-09-23
KR20190100876A (ko) 2019-08-29
JP6853843B2 (ja) 2021-03-31
US10564551B2 (en) 2020-02-18
KR102227293B1 (ko) 2021-03-15
TW201941001A (zh) 2019-10-16
JP2019179237A (ja) 2019-10-17
DE102018202637A1 (de) 2019-08-22
CN110174816A (zh) 2019-08-27
US20190258180A1 (en) 2019-08-22

Similar Documents

Publication Publication Date Title
KR101930836B1 (ko) 검사 장치, 리소그래피 장치, 및 디바이스 제조 방법
TWI692681B (zh) 決定用於量測微影光罩之成像光學單元的成像像差貢獻度的方法
KR102326190B1 (ko) 정정 유도 방법 및 장치, 구조체의 속성을 결정하는 방법 및 장치, 디바이스 제조 방법
CN110174816B (zh) 确定光刻掩模焦点位置的方法和执行这种方法的度量系统
KR20220159903A (ko) 측정될 동공 내에서 조명광에 의해 조명될 때의 광학 시스템의 이미징 품질을 결정하는 방법
TWI889030B (zh) 藉助計量系統對測量物件的空間圖像而三維確定的方法以及用於實施該確定方法的計量系統
JP2019179237A5 (enExample)
TWI692678B (zh) 用於確定對線寬波動微影光罩之結構無關貢獻的方法
KR102761218B1 (ko) 방법 및 계측 시스템
KR102955659B1 (ko) 물체의 이미지를 확인하는 방법
CN112484658A (zh) 检测物体结构的方法和实行该方法的设备
US12566406B2 (en) Dark field digital holographic microscope and associated metrology method
TWI428583B (zh) 散射計方法及裝置、微影裝置、微影處理單元及器件製造方法