TWI744678B - Electronic device and method for manufacturing the same - Google Patents

Abstract

An electronic device includes a first layer, a second layer, a first spacer, a filling, and a conductive material. The first layer includes a first component. The second layer is disposed on the first layer and has a second component. The first spacer is disposed between the first layer and the second layer and has a through hole. The filling is disposed between the first layer and the second layer, and a material of the filling is different than a material of the first spacer. The conductive material is located in the through hole, and the first layer and the second layer are electrically connected to each other through the conductive material.

Description

Electronic device and manufacturing method thereof

This disclosure relates to an electronic device and a manufacturing method thereof.

With the development of technology, various commercial or household equipment has gradually become electronic. For example, among various consumer electronic products in household appliances, display panels have been widely used in different products because they can provide display images and operating interfaces. The display panel contains multiple electronic components and circuits connecting these electronic components. For example, in a display panel using a pixel array, a signal can be transmitted to the thin film transistor of the pixel array through a line to apply a voltage to the pixel electrode connected to the thin film transistor.

For the circuit configuration of the display panel, the electrical connection can be completed by forming multiple circuit layers. For example, a contact hole can be formed on the dielectric layer to complete the electrical connection between different layers, thus forming a contact hole The process will affect the yield of the display panel. Therefore, how to improve the process yield of contact holes has become one of the important issues in related fields.

One embodiment of the present disclosure provides an electronic device, including Contains a first layer body, a second layer body, a first spacer, a filler, and a conductive material. The first layer body has a first element. The second layer body is arranged on the first layer body and has a second element. The first spacer is arranged between the first layer body and the second layer body and has a contact hole. The filler is arranged between the first layer body and the second layer body, and the material of the filler is different from the material of the first spacer. The conductive material is located in the contact hole, and the first element and the second element are electrically connected by the conductive material.

In some embodiments, the electronic device further includes a second spacer. The second spacer is arranged between the first layer body and the second layer body, and is completely separated from the first layer body and the first spacer through the filler.

In some embodiments, the second spacer extends along the first direction, so that the length of the second spacer in the first direction is greater than the length of the first spacer in the first direction.

In some embodiments, the electronic device further includes a conductive pad. The conductive pad is arranged between the conductive material and the second layer body, and the conductive material and the second element are electrically connected through the conductive pad.

In some embodiments, the first element and the second element are each a thin film transistor, an inorganic light emitting diode, an organic light emitting diode, a fan-out wiring, a touch circuit, or a combination thereof.

In some embodiments, the width of the first spacer is tapered, vertical, or gradually expanded in the thickness direction.

In some embodiments, the second element includes a conductive layer, and the conductive material passes through the conductive layer.

In some embodiments, the conductive material extends from the first layer body to beyond the interface between the second layer body and the filler.

One embodiment of the present disclosure provides a manufacturing method of an electronic device, including the following steps. A first spacer is formed on the first layer body. After the first spacer is formed, a filler is disposed on the first layer body. The second layer body is covered on the first spacer and the filler. A conductive material passing through the first spacer is formed.

In some embodiments, the step of forming the conductive material is performed after the step of covering the second layer body on the first spacer and the filler.

Through the above configuration, in the manufacturing process of the electronic device, the contact hole can be formed after the distance between the first layer body and the second layer body is determined, and then the conductive material is formed in it. In this way, the contact hole can be It is formed under the condition that the expected depth can be determined, so that the contact hole can have a stable perforation size, and the perforation quality of the contact hole can also be improved, and also, thus, the reliability of the subsequently formed conductive material can be improved.

100A, 100B, 100C, 100D, 100E, 100F: electronic device

102: The first carrier substrate

108: second carrier substrate

109: The third carrier substrate

110: first layer body

111: first substrate

112: first gate insulating layer

113: first dielectric layer

114: The first thin film transistor

115: first gate electrode

116: first source electrode

117: first drain electrode

118: The first channel layer

119: Flat layer

120, 210: filler

130: second layer body

131: second substrate

132: second gate insulating layer

133: second dielectric layer

134: The second thin film transistor

135: second gate electrode

136: second source electrode

137: second drain electrode

138: The second channel layer

140, 140’, 140A, 140B, 140C: first spacer

142, 142A, 142B, 142C, 182, 184, 222: contact hole

150, 150’, 150A, 150B, 150C, 172, 230: conductive material

152: Groove

154, 232: side wall

160, 167: Dielectric layer structure

162A, 162B, 162C, 164A, 164B: routing layer

166, 244: pixel definition layer

168A, 168B: touch circuit layer

170, 246: light-emitting element

174: Conductive pad

180, 180’: Extension spacer

190: Auxiliary Spacer

192: Auxiliary Contact Hole

200: second spacer

220: third spacer

240: third layer body

242: third substrate

248: drive electrode

250: third dielectric layer

260: Island structure

262: Data Line

264: scan line

D1: First direction

D2: second direction

W1: bottom width

W2: top width

FIG. 1 is a schematic side sectional view of an electronic device according to the first embodiment of the present disclosure.

FIG. 2 is a schematic side sectional view of the electronic device according to the second embodiment of the present disclosure.

FIG. 3 is a schematic side sectional view of the electronic device according to the third embodiment of the present disclosure.

FIG. 4 is a schematic side sectional view of the electronic device according to the fourth embodiment of the present disclosure.

FIG. 5 is a schematic side sectional view of the electronic device according to the fifth embodiment of the present disclosure

FIGS. 6A to 6D are respectively schematic side sectional views showing different stages of the manufacturing method of the electronic device according to some embodiments of the present disclosure.

FIGS. 7A to 7D are respectively schematic side cross-sectional diagrams showing the electronic device in different stages of the manufacturing method according to some embodiments of the present disclosure.

FIGS. 8A to 8E are respectively schematic side cross-sectional diagrams showing different stages of the manufacturing method of the electronic device according to some embodiments of the present disclosure.

FIGS. 9A to 9C are respectively schematic side cross-sectional diagrams showing different stages of the manufacturing process of the electronic device according to some embodiments of the present disclosure.

FIGS. 10A to 10C are schematic side cross-sectional diagrams showing the electronic device at different stages of the manufacturing process according to some embodiments of the present disclosure.

FIG. 11A to FIG. 11G are schematic diagrams respectively illustrating different stages of the manufacturing process of the electronic device according to some embodiments of the present disclosure.

FIG. 12A is a schematic side sectional view of an electronic device according to a sixth embodiment of the present disclosure.

FIG. 12B is a schematic side sectional view of the electronic device applied as a stretchable structure.

FIG. 12C is a schematic top view of the structure of the electronic device.

FIG. 12D is a schematic top view of the structure of the electronic device after being stretched.

FIGS. 13A to 13C are respectively schematic side cross-sectional diagrams showing the electronic device at different stages in the manufacturing process according to some embodiments of the present disclosure.

Hereinafter, multiple implementation manners of the disclosure will be disclosed in diagrams. For the sake of clarity, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit the content of this disclosure. That is to say, these practical details are not necessary in the part of the implementation of the present disclosure. In addition, in order to simplify the drawings, some conventionally used structures and elements are shown in the drawings in a simple and schematic manner.

When an element is referred to as being "on", it can mean that the element is directly connected to other elements, or there can be other elements between the two to achieve an indirect connection. In this article, it is understandable to use terms such as first and second to describe various elements and/or layers, and these terms are used to identify a single element and/or layer. Therefore, the first element and/or layer hereinafter may also be referred to as the second element and/or layer without departing from the original intent of the present disclosure.

The electronic device disclosed in the present disclosure can electrically connect its internal stacked structures to each other to facilitate the circuit layout between components. Please refer to FIG. 1. FIG. 1 is a schematic side cross-sectional view of the electronic device 100A according to the first embodiment of the present disclosure. The electronic device 100A includes a first layer body 110, a filler 120, a second layer body 130, a first spacer 140, and a conductive material 150, wherein the second layer body 130 is disposed on the first layer body 110, and the filler 120 And the first spacer 140 is disposed between the first layer body 110 and the second layer body 130.

The first layer body 110 may have a first element, and the second layer body 130 may have a second element, an upper surface, and a lower surface opposite to the upper surface. The lower surface of the second layer body 130 is located between the first spacer 140 and Between the upper surface, the first element and the second element can be thin film transistors, inorganic light-emitting diodes, organic light-emitting diodes, fan-out wiring, touch-control circuits, or a combination thereof, so as to make the electronic device The device 100A can be used as a display panel, a touch panel or other devices. Further details of the structure of these components will be described later.

The first spacer 140 can be used to support the second layer body 130 and define the distance between the first layer body 110 and the second layer body 130. Specifically, the bottom surface of the first spacer 140 faces and contacts the first layer body 110, and the top surface of the first spacer 140 faces and contacts the second layer body 130. In this way, the distance between the first layer body 110 and the second layer body 130 can be determined by the height of the first spacer 140, so that the distance between the first layer body 110 and the second layer body 130 can be equal to or The thickness is similar to the thickness of the first spacer 140, which will help improve the yield of the electronic device 100A during the manufacturing process.

The first spacer 140 may have a contact hole 142, and the contact hole 142 of the first spacer 140 may communicate from the first layer body 110 to the second layer body 130. The conductive material 150 can pass through the second layer body 130 and be located in the second layer body 130 and in the contact hole 142, so that the first element of the first layer body 110 and the second element of the second layer body 130 can pass through The conductive material 150 achieves an electrical connection, wherein a part of the conductive material 150 is located on the upper surface of the second layer body 130 and covers a part of the upper surface. Taking FIG. 1 as an example, the second layer body 130 may further have a through hole, and the conductive material 150 can extend from the through hole of the second layer body 130 to the contact hole 142 of the first spacer 140. The conductive material 150 may be formed in a columnar structure or formed with grooves, such as the conductive material 150', and these differences may be determined by subsequent manufacturing processes. For example, if the requirement of the subsequent process is to laminate a protruding layer on the second layer 130, the groove 152 of the conductive material 150' can be used to conform to the morphology of the laminated layer. In addition, the conductive material 150 can protrude from the opposite upper and lower surfaces of the second layer body 130, and completely penetrate the second layer body from the upper surface and the lower surface of the second layer body 130. 130, as shown in Figure 1.

The material of the filler 120 may be different from the material of the first spacer 140. Specifically, the filler 120 may include epoxy resin, glue, liquid material, curable material, or a combination thereof, and the first spacer 140 may include acrylic material, polyimide, light-sensitive resin, or The combination, and the first spacer 140 can be formed through a photomask process. For example, a layer of polyimide film may be formed first, and the polyimide film may be patterned through a photomask process to form the first spacer 140. In this way, the formed first spacer 140 can have a good film forming quality, thereby reducing the process variation of forming the contact hole 142 therein, thereby improving the process yield of forming the contact hole 142. The first spacer 140 formed by the photomask process may have a gradual width. For example, the width of the first spacer 140 is in the thickness direction (that is, along the direction from the first layer 110 to the second layer 130). ) Will be tapered, so that the bottom width W1 of the first spacer 140 will be greater than the top width W2. The present disclosure is not limited to this. Although the width of the first spacer 140 in this embodiment is tapered in its thickness direction, in other embodiments, the width of the first spacer 140 may also be in the thickness direction. Is it vertical or gradual.

Furthermore, since the conductive material 150 used to electrically connect the first element of the first layer body 110 to the second element of the second layer body 130 is formed in the contact hole 142, the process of improving the contact hole 142 is good. The rate can also improve the reliability of electrically connecting the first element to the second element. Furthermore, when the formed first spacer 140 can have good film forming quality, the quality of the sidewall defining the boundary of the contact hole 142 can be improved, thereby reducing the process variation when forming the conductive material 150.

On the other hand, in the case of the above configuration, if there is a need to replace the material of the filler 120, since the contact hole 142 is formed in the first spacer 140, even if the material of the filler 120 is replaced, it is like Changing to a liquid crystal material or a liquid heat dissipation material will not affect the formation process of the contact hole 142.

The above structure can be applied to the first element and the second element in different configurations to be used as electronic devices for different purposes, that is, the above structure has a high degree of structural compatibility, which will be described below. Please see FIG. 2, which is a schematic side sectional view of the electronic device 100B according to the second embodiment of the present disclosure. In this embodiment, the first element of the first layer body 110 and the second element of the second layer body 130 are each formed as a thin film transistor.

Specifically, the first layer body 110 may include a first substrate 111, a first gate insulating layer 112, a first dielectric layer 113, and a first thin film transistor 114, wherein the first thin film transistor 114 includes a first gate electrode. The electrode 115, the first source electrode 116, the first drain electrode 117, and the first channel layer 118, and the first thin film transistor can be regarded as the first element of the first layer body 110, wherein the first element is located in the first medium Between the electrical layer 113 and the first substrate 111. In this article, the “dielectric material”, “dielectric layer”, “insulating layer” and “flat layer” can each include organic materials or inorganic materials, such as epoxy resin, silicon oxide (SiOx), nitride Silicon (SiNx), a composite layer composed of silicon oxide and silicon nitride, or other suitable dielectric materials. The "channel layer" may include silicon, such as monocrystalline silicon material, polycrystalline silicon material, or other suitable materials.

The first substrate 111 may be a dielectric material, a light-transmitting substrate, a flexible substrate, or a combination thereof. The first channel layer 118 and the first gate insulating layer 112 can be provided On the upper surface of the first substrate 111, the first gate insulating layer 112 covers the first channel layer 118. The first gate electrode 115 and the first dielectric layer 113 may be disposed on the upper surface of the first gate insulating layer 112, wherein the first dielectric layer 113 covers the first gate electrode 115, and the first gate electrode 115 It is located directly above the first channel layer 118. The first source electrode 116 and the first drain electrode 117 may be disposed on the upper surface of the first dielectric layer 113, and the first dielectric layer 113 and the first gate insulating layer 112 may have a corresponding first channel layer 118 in common The two through holes of, make the first source electrode 116 and the first drain electrode 117 electrically connect to the first channel layer 118 through these through holes, respectively.

The second layer body 130 may include a second substrate 131, a second gate insulating layer 132, a second dielectric layer 133, and a second thin film transistor 134, wherein the first dielectric layer 113, the second dielectric layer 133 and the filling The objects 120 are located between the first substrate 111 and the second substrate 131. The second thin film transistor 134 includes a second gate electrode 135, a second source electrode 136, a second drain electrode 137, and a second channel layer 138, and the second thin film transistor 134 can be regarded as the second layer body 130 The second element.

The second substrate 131 may be a dielectric material, a light-transmitting substrate, a flexible substrate, or a combination thereof, and the upper surface of the second substrate 131 is equivalent to the upper surface of the second layer body 130. The second channel layer 138 and the second gate insulating layer 132 can be disposed on the lower surface of the second substrate 131, and the second gate insulating layer 132 covers the second channel layer 138, wherein the second gate insulating layer 132 is located on the second substrate 131. Between the second substrate 131 and the second dielectric layer 133. The second gate electrode 135 and the second dielectric layer 133 may be disposed on the lower surface of the second gate insulating layer 132, wherein the second dielectric layer 133 covers the second gate electrode 135, and the second gate electrode 135 It is located directly under the second channel layer 138 square. The second source electrode 136 and the second drain electrode 137 may be disposed on the lower surface of the second dielectric layer 133, and the second dielectric layer 133 and the second gate insulating layer 132 may have a corresponding second channel layer 138 in common The two through holes of, so that the second source electrode 136 and the second drain electrode 137 can be electrically connected to the second channel layer 138 through these through holes, respectively.

Similarly, the filler 120 and the first spacer 140 are disposed between the first layer body 110 and the second layer body 130. Furthermore, the bottom surface of the first spacer 140 will be disposed on the first layer body 110. On the first dielectric layer 113, it can be located between the first source electrode 116 and the first drain electrode 117, and the top surface of the first spacer 1140 can contact the second drain of the second layer body 130 Electrode 137.

The conductive material 150 may pass through the second layer body 130, such as the second substrate 131, the second gate insulating layer 132, the second dielectric layer 133, and the second drain electrode 137 of the second layer body 130, so as to extend It enters into the contact hole 142 of the first spacer 140 and further penetrates the first dielectric layer 113 of the first layer body 110 until it contacts the first gate electrode 115, thereby electrically connecting the first element. In other words, the conductive material 150 can extend from the inside of the first layer body 110 to exceed the interface between the second layer body 130 and the filler 120.

In this configuration, the conductive material 150 will form an interface with the first gate electrode 115 of the first thin film transistor 114 to electrically connect the first thin film transistor 114. At least a part of the sidewall 154 of the conductive material 150 is surrounded by and in contact with the conductive layer of the second layer body 130 to be electrically connected to the second element of the second layer body 130. Specifically, the second drain electrode 137 of the second layer body 130 can surround and contact the sidewall 154 of the conductive material 150. In this way, the conductive material 150 can be electrically connected to the second thin film transistor 134, and the first The first of a layer of 110 The thin film transistor 114 can be electrically connected to the second thin film transistor 134 of the second layer body 130 through the conductive material 150.

Please refer to FIG. 3 again, which is a schematic side sectional view of the electronic device 100C according to the third embodiment of the present disclosure. In this embodiment, the first element of the first layer body 110 and the second element of the second layer body 130 are each formed as a thin film transistor. However, at least one difference between this embodiment and the second embodiment is that this embodiment The second layer body 130 of the method has a different layer body configuration.

Specifically, in the second layer body 130, the second source electrode 136 and the second drain electrode 137 of the second thin film transistor 134 are completely located on the second gate insulating layer 132, and the second drain electrode The pole electrode 137 not only surrounds and contacts at least a part of the side wall 154 of the conductive material 150, but also contacts the conductive material 150 through a part of the upper surface thereof. In addition, the top surface of the first spacer 140 is in contact with the second dielectric layer 133 of the second layer body 130 and forms an interface.

Please refer to FIG. 4 again, which is a schematic side cross-sectional view of the electronic device 100D according to the fourth embodiment of the present disclosure. In this embodiment, the first element of the first layer body 110 is formed as a thin film transistor, and the second element of the second layer body 130 is formed as a fan-out wiring. At least one difference is that the configuration of the first spacers 140A, 140B, 140C and the conductive materials 150A, 150B, 150C is different in this embodiment.

Specifically, the second layer body 130 may include a dielectric layer body structure 160 and a plurality of wiring layers 162A, 162B, 162C, and the wiring layers 162A-162C may extend to enter the fan-out wiring area of the electronic device 100D . Wiring layer 162A, 162C can be located in the dielectric layer structure 160, and the wiring layer 162B can be located on the dielectric layer structure 160, and the height of the wiring layers 162A-162C relative to the first layer 110 can be different. This is achieved by configuring the dielectric layer structure 160 into a composite layer. For example, the process of forming the wiring layers 162A-162C can be inserted into the process of forming the composite layer of the dielectric layer structure 160. For example, after the first layer structure of the dielectric layer structure 160 is formed, The wiring layer 162C is formed, and then after the second layer structure of the dielectric layer structure 160 is formed, the wiring layer 162A is formed.

The wiring layers 162A-162C can be respectively located above the first source electrode 116, the first gate electrode 115 and the first drain electrode 117, wherein the first spacer 140A is located on the wiring layer 162A and the first source electrode 116; the first spacer 140B is located between the wiring layer 162B and the first gate electrode 115; the first spacer 140C is located between the wiring layer 162C and the first drain electrode 117.

The conductive materials 150A-150C can pass through the dielectric layer structure 160 and pass through different wiring layers 162A-162C until they contact the corresponding electrodes in the first layer body 110. Specifically, the conductive material 150A can pass through the dielectric layer structure 160 and the wiring layer 162A, thereby extending into the contact hole 142A of the first spacer 140A, and contacting the first source electrode of the first layer body 110 116; The conductive material 150B can pass through the dielectric layer structure 160 and the wiring layer 162B, thereby extending into the contact hole 142B of the first spacer 140B, and further through the first dielectric layer of the first layer 110 The layer 113 reaches the first gate electrode 115 contacting the first layer body 110; the conductive material 150C can pass through the dielectric layer body structure 160 and the wiring layer 162C, thereby extending into the contact hole 142C of the first spacer 140C , And contact the first drain electrode 117 of the first layer body 110.

Similarly, for the wiring layers 162A-162C passing through the conductive materials 150A-150C, they can be electrically connected to the corresponding conductive materials 150A-150C by surrounding and contacting at least a part of the sidewalls of the corresponding conductive materials 150A-150C. 150C. Therefore, the first source electrode 116, the first gate electrode 115, and the first drain electrode 117 of the first thin film transistor 114 can be electrically connected to the wiring layers 162A-162C through the conductive materials 150A-150C, respectively, so as to be able to Furthermore, it is electrically connected to the fan-out wiring area.

Please refer to FIG. 5 again, which is a schematic side sectional view of the electronic device 100E according to the fifth embodiment of the present disclosure. In this embodiment, the first element of the first layer body 110 is formed to include a thin film transistor, fan-out wiring, and a light emitting diode, and the second element of the second layer body 130 is formed as a touch circuit. And at least one difference between this embodiment and the second embodiment is that the configuration of the first spacers 140A, 140B and the conductive materials 150A, 150B is different in this embodiment.

Specifically, the first layer body 110 not only includes the aforementioned first substrate 111, the first gate insulating layer 112, the first dielectric layer 113, and the first thin film transistor 114, but also includes wiring layers 164A and 164B. , A flat layer 119, a pixel definition layer 166, and a light-emitting element 170. The wiring layer 164A is disposed between the first gate insulating layer 112 and the first dielectric layer 113, and the wiring layer 164B is disposed between the first dielectric layer 113 and the flat layer 119, and the wiring layers 164A, 164B can extend into the fan-out wiring area (not shown) into the electronic device 100E. The flat layer 119 is disposed on the first dielectric layer 113, and the pixel definition layer 166 is disposed on the flat layer 119. The pixel defining layer 166 can define the position where the light emitting element 170 is arranged. For example, the pixel defining layer 166 can have an opening, and the light emitting element 170 can be arranged on a flat layer. The upper part 119 is located in the opening, and the first drain electrode 117 of the first thin film transistor 114 can pass through the flat layer 119 to be electrically connected to the light-emitting element 170. In some embodiments, the light-emitting element 170 includes an upper electrode and a light-emitting layer. The light-emitting layer is disposed between the first drain electrode 117 and the upper electrode, so that the first drain electrode 117 and the upper electrode can jointly apply a bias voltage. Luminescent layer. In addition, in some embodiments, the light-emitting element 170 may be an organic light-emitting element, an inorganic light-emitting element, a micro-LED or a sub-millimeter light-emitting diode (mini-LED).

The second layer body 130 includes a dielectric layer body structure 167 and touch circuit layers 168A and 168B. The touch circuit layers 168A and 168B can be located in the dielectric layer structure 167, and the height of the touch circuit layers 168A and 168B relative to the first layer body 110 can be different. This can also be achieved by arranging the dielectric layer structure 167 It is realized as a composite layer, which will not be repeated here. The touch circuit layers 168A and 168B can be respectively located above the wiring layers 164A and 164B, wherein the first spacer 140A is located between the wiring layer 164A and the touch circuit layer 168A, and the first spacer 140B is located on the wiring Between the layer 164B and the touch circuit layer 168B. The touch circuit layers 168A and 168B may be driving electrodes (Tx) and sensing electrodes (Rx), respectively, so that the electronic device 100E can have a touch function.

The conductive materials 150A and 150B can pass through the dielectric layer structure 167 and through different touch circuit layers 168A and 168B until they contact the corresponding wiring layers 164A and 164B in the first layer body 110. Specifically, the conductive material 150A can pass through the dielectric layer structure 167 and the touch circuit layer 168A, thereby extending into the contact hole 142A of the first spacer 140A, and further penetrate the flat surface of the first layer 110 Layer 119 and the first dielectric layer 113 until contacting the first The wiring layer 164A of the layer body 110; the conductive material 150B can pass through the dielectric layer structure 167 and the touch circuit layer 168B, thereby extending into the contact hole 142B of the first spacer 140B, and further passing through the first The flat layer 119 of the layer body 110 reaches to the wiring layer 164B of the first layer body 110.

Similarly, for the touch circuit layers 168A, 168B passing through the conductive materials 150A, 150B, they can be electrically connected to the corresponding conductive materials 150A by surrounding and contacting at least a part of the sidewalls of the corresponding conductive materials 150A, 150B. , 150B. Therefore, the wiring layers 164A and 164B of the first layer body 110 can be electrically connected to the touch circuit layers 168A and 168B through the conductive materials 150A and 150B, respectively, so as to electrically connect the touch circuit layers 168A and 168B to the fan-out type wiring. Line area. Although this embodiment forms the conductive materials 150A, 150B with grooves, the content of the disclosure is not limited to this. In other embodiments, the conductive materials 150A, 150B with grooves can also be replaced with columnar shapes. structure.

In addition to the above-mentioned structural configuration, the above-mentioned combination can also be changed. For example, the light-emitting element 170 of the fifth embodiment can be omitted, and the wiring layers 164A and 164B can be retained.

The manufacturing method of the electronic device will be described below. In order not to make the diagram too complicated, the first layer and the second layer system in the manufacturing method are drawn as shown in Figure 1. However, the content of this disclosure is not This is a limitation. The illustrated first layer and second layer system can be configured to have thin-film transistors, inorganic light-emitting diodes, organic light-emitting diodes, fan-out wiring, touch-control circuits, or a combination thereof.

Please refer to FIG. 6A to FIG. 6D, which are respectively schematic side cross-sectional diagrams illustrating different stages of the manufacturing method of the electronic device according to some embodiments of the present disclosure.

As shown in FIG. 6A, the first layer body 110 may be formed on the first carrier substrate 102 first, wherein the first carrier substrate 102 may be a glass substrate, and the first layer body 110 may include the first element as described above. Next, a first spacer 140 can be formed on the first layer body 110, wherein the first spacer 140 can be formed by patterning a single film layer through a photomask process, and the single film layer can include acrylic material, polyacrylic material, etc. Amide, light-sensitive resin, or a combination thereof, or formed by ink-jet printing (IJP). In some embodiments, the formed first spacer 140 may be subjected to surface treatment to improve the cleanliness of the first spacer 140, thereby facilitating the yield of subsequent processes. In some embodiments, the thickness of the formed first spacer 140 may be about 0.1 μm to about 200 μm, or may also be about 2 μm to about 5 μm. In addition, in the present disclosure, the shape of the formed first spacer 140 may not be limited to that depicted in FIG. 6A. In other embodiments, the first spacer 140 may also be inverted trapezoid, rectangular or curved.

As shown in FIG. 6B, after the first spacer 140 is formed, the filler 120 may be disposed on the first layer body 110. The configured filler 120 may be higher than the first spacer 140, so that the filler 120 can be squeezed and flowed outward in a sufficient amount in the subsequent manufacturing process. In some embodiments, when the electronic device is used as a display device, the filler 120 may also be arranged in the peripheral area and guided to the display area by way of drainage.

As shown in FIG. 6C, the second layer body 130 may be formed on the second carrier substrate 108, wherein the second carrier substrate 108 may be a glass substrate 130, and the second layer body 130 may include the second element as described above. Then, the second carrier substrate 108 and the second layer body 130 are disposed on the first spacer 140 and the filler 120 to complete the pairing. During the pairing process, the second layer body 130 will cover the first On the spacer 140 and the filler 120, the excess filler 120 is squeezed so that the filler 120 can be filled between the first layer body 110 and the second layer body 130. After the assembly, the second carrier substrate 108 can be separated from the second layer body 130.

As shown in FIG. 6D, a perforation process can be performed, which includes removing a part of the second layer body 130 and a part of the first spacer 140, and forming a connection to the first layer body 110 in the first spacer 140 Contact hole 142. In some embodiments, the perforation process can be achieved by laser etching, reactive-ion etching (RIE), inductively coupled plasma RIE (ICP-RIE), or gas plasma etching. Then, a conductive material 150 may be formed in the contact hole 142, and the conductive material 150 will be higher than the second layer body 130, thereby forming a conductive material 150 passing through the second layer body 130 and the first spacer 140. Since the conductive material 150 can be formed in the contact hole 142, the conductive material 150 can be electrically connected to the first layer body 110. Similarly, the conductive material 150 may be formed in a columnar structure or have grooves. After the conductive material 150 is formed, the first carrier substrate 102 can be detached from the first layer body 110 to obtain the structure of the electronic device as described above.

By using the above-mentioned manufacturing process, the step of forming the conductive material 150 will be performed after the step of covering the second layer 130 on the first spacer 140 and the filler 120. In this way, the first layer can be determined The contact hole 142 is formed in the first spacer 140 only after the distance between the body 110 and the second layer body 130. In other words, the contact hole 142 is formed under the condition that the expected depth of the contact hole 142 can be determined, so that the contact hole 142 can have a stable perforation size, and the perforation quality of the contact hole 142 can be improved.

Furthermore, as mentioned above, since the first layer body 110 and the second layer body The distance between 130 may be equal to or similar to the thickness of the first spacer 140, so that the distance between the first layer body 110 and the second layer body 130 can be prevented from being too small or too large. When the distance between the first layer body 110 and the second layer body 130 is too small, the layer body or components between the first layer body 110 and the second layer body 130 may be squeezed. When the distance between the body 110 and the second layer body 130 is too large, the thickness of the electronic device may be too thick.

Please refer to FIG. 7A to FIG. 7D, which are respectively schematic side cross-sectional diagrams showing different stages of the manufacturing method of the electronic device according to some embodiments of the present disclosure. At least one difference between this embodiment and the aforementioned manufacturing method is that in this embodiment, the first spacer may be perforated before the step of disposing the filler.

Specifically, as shown in FIG. 7A, after the first layer body 110 and the first spacer 140 are formed on the first carrier substrate 102, the first spacer 140 may be first subjected to a perforation process to make the first gap A pre-perforated hole 141 is formed in the object 140.

As shown in FIG. 7B, after the first spacer 140 is formed, the filler 120 may be disposed on the first layer body 110. The configured filler 120 may be higher than the first spacer 140, so that the filler 120 can be squeezed and flowed outward in a sufficient amount in the subsequent manufacturing process.

As shown in FIG. 7C, a second layer body 130 may be formed on the second carrier substrate 108, and the second layer body 130 may be fixed on the first spacer 140 and the filler 120 to complete the pairing. Then, the second carrier substrate 108 can be detached from the second layer body 130, which can be the same as the manufacturing stage described in FIG. 6C, and will not be repeated here.

As shown in FIG. 7D, a perforation process can be performed, which includes at least removing a part of the second layer body 130, and forming a contact hole 142 in the first spacer 140 that is connected to the first layer body 110. In some embodiments, if the size of the pre-perforated hole 141 (as shown in FIG. 7A) is the same as the size of the expected contact hole 142, the pre-perforated hole 141 can be removed after a part of the second layer body 130 is removed. Considered as a contact hole 142. In other embodiments, if the size of the pre-perforated hole 141 (as shown in FIG. 7A) is smaller than the size of the contact hole 142 that is expected to be formed, after removing a part of the second layer body 130, the removal of a part of the first layer is continued. A spacer 140 is used to form a contact hole 142. Then, a conductive material 150 may be formed in the contact hole 142, and the conductive material 150 may pass through the second layer body 130 and the first spacer 140. Similarly, the conductive material 150 may be formed in a columnar structure or have a groove. After the conductive material 150 is formed, the first carrier substrate 102 is detached from the first layer body 110, which can be the same as the manufacturing stage described in FIG. 6D, and will not be repeated here.

By adopting the above-mentioned manufacturing process, the yield rate of forming the contact hole 142 can be improved, and the manufacturing process can be more flexible.

Please refer to FIG. 8A to FIG. 8E, which are respectively schematic side cross-sectional diagrams showing the electronic device at different stages of the manufacturing method according to some embodiments of the present disclosure. At least one difference between this embodiment and the aforementioned manufacturing method is that in this embodiment, the conductive material is formed before the pair.

Specifically, as shown in FIG. 8A, the first layer body 110 may be formed on the first carrier substrate 102 first, and the first layer body 110 is formed to have the first element. Then, a single film layer can be patterned through a photomask process to form a first spacer 140 on the first layer body 110, which can be the same as the manufacturing stage described in FIG. 6A, and will not be repeated here.

As shown in FIG. 8B, the first spacer 140 may be subjected to a perforation process to form a contact hole 142 in the first spacer 140 that is connected to the first layer body 110. Then, a conductive material 172 may be formed in the contact hole 142, and the conductive material 172 may be higher than the first spacer 140, thereby forming a conductive material 172 passing through the first spacer 140. Since the conductive material 172 is formed in the contact hole 142, the conductive material 172 can be electrically connected to the first layer body 110. In addition, a second layer body 130 may be formed on the second carrier substrate 108, and the second layer body 130 is formed to have a second element, and then a conductive pad 174 may be formed on the second layer body 130, wherein the conductive pad 174 The second element of the second layer body 130 can be electrically connected. In some embodiments, the conductive pad 174 may be formed through a patterned metal layer, such as a patterned copper metal layer.

As shown in FIG. 8C, after the first spacer 140 and the conductive material 172 passing therethrough are formed, the filler 120 may be disposed on the first layer body 110. The configured filler 120 may be higher than the first spacer 140 and the conductive material 172 so that the filler 120 can be squeezed and flowed outward in a sufficient amount in the subsequent manufacturing process. In addition, the filler 120 may not be disposed on the second carrier substrate 108.

As shown in FIG. 8D, the second carrier substrate 108 and the second layer body 130 can be disposed on the first spacer 140 and the filler 120, wherein the second layer body 130 will cover the filler 120 to Complete the pair. During the pairing process, the conductive pad 174 can be aligned with the conductive material 172. Therefore, after the pairing is completed, the conductive pad 174 is disposed between the conductive material 172 and the second layer body 130, and is connected to the conductive material 172, so that the conductive material 172 and the second element can be electrically connected through the conductive pad 174 connect. In this way, the second element of the second layer body 130 can be electrically connected to the first element of the first layer body 110 through the conductive pad 174 and the conductive material 172. Pieces. In addition, during the assembly process, the second layer body 130 squeezes the excess filler 120 so that the filler 120 can be filled between the first layer body 110 and the second layer body 130.

As shown in FIG. 8E, after the pairing is completed, the first carrier substrate 102 can be separated from the first layer body 110, and the second carrier substrate 108 can also be separated from the second layer body 130. By adopting the above-mentioned production process, the production process can be made more flexible.

Please refer to FIG. 9A to FIG. 9C, which are respectively schematic side cross-sectional diagrams showing the electronic device at different stages in the manufacturing process according to some embodiments of the present disclosure. At least one difference between this embodiment and the aforementioned manufacturing method is that in this embodiment, an extension spacer can be formed on the second layer body.

Specifically, as shown in FIG. 9A, a first layer body 110 can be formed on the first carrier substrate 102 first, and the first layer body 110 is formed to have a first element, and then patterned through a photomask process A single film layer is used to form a first spacer 140 on the first layer body 110. In this stage, part of the first spacer 140 may be subjected to a perforation process, so that a part of the first spacer 140 will have a contact hole 142. For example, the first spacer 140 first has a contact hole 142 through the perforation process, while the first spacer 140' does not yet have a contact hole. On the other hand, the second layer body 130 can be formed on the second carrier substrate 108, and the second layer body 130 is formed with a second element, and then a single film layer is patterned through a photomask process. An extension spacer 180 is formed on the layer body 130. Similarly, at this stage, a part of the extension spacer 180 may be subjected to a perforation process, so that a part of the extension spacer 180 will have a contact hole 182. For example, the extension spacer 180 first has a contact hole 182 through the perforation process, and the extension spacer 180 180’ does not yet have contact holes.

As shown in FIG. 9B, the second carrier substrate 108 and the second layer body 130 can be disposed on the first carrier substrate 102 and the first layer body 110 to complete the pairing. During the assembly process, the filler 120 is disposed between the first layer body 110 and the second layer body 130, and the extension spacer 180 can be aligned with the first spacer 140. Therefore, after the pairing is completed, the first spacer 140 and the extension spacer 180 will be connected, and their respective contact holes 142 and contact holes 182 will also be connected. In addition, during the assembly process, the second layer body 130 squeezes the excess filler 120 so that the filler 120 can be filled between the first layer body 110 and the second layer body 130.

As shown in FIG. 9C, the second carrier substrate 108 can be detached from the second layer body 130 first, and then a perforation process is performed, which includes removing a part of the second layer body 130, a part of the first spacer 140, and a part The extension spacer 180 can form a contact hole 184 connected to the first layer body 110 in the first spacer 140 ′ and the extension spacer 180 ′ that did not have a contact hole. Then, a conductive material 150 can be formed in the contact hole 184, and the conductive material 150 passes through the second layer body 130, the first spacers 140, 140', and the extension spacers 180, 180'. Similarly, the conductive material 150 can be It is formed into a columnar structure or has grooves. After that, the first carrier substrate 102 can be detached from the first layer body 110.

By adopting the above-mentioned manufacturing process, the distance between the first layer body 110 and the second layer body 130 can be made more flexible. In other words, if there is a need to increase the distance between the first layer body 110 and the second layer body 130, spacers can be formed on the first layer body 110 and the second layer body 130 respectively to form a pair of Then the distance between the first layer body 110 and the second layer body 130 is increased. In this way, there is no need to increase the thickness of the first spacer 140 formed on the first layer body 110. This It is beneficial to maintain the film forming quality of the first spacer 140.

Please refer to FIG. 10A to FIG. 10C, which are schematic side cross-sectional diagrams illustrating the electronic device at different stages in the manufacturing process according to some embodiments of the present disclosure. At least one difference between this embodiment and the aforementioned manufacturing method is that in this embodiment, an auxiliary spacer can be formed on the second layer body, and the auxiliary spacer will be placed in the contact hole of the first spacer.

Specifically, as shown in FIG. 10A, a first layer body 110 may be formed on the first carrier substrate 102 first, and the first layer body 110 is formed to have a first element, and then patterned through a photomask process A single film layer is used to form a first spacer 140 on the first layer body 110, and the first spacer 140 can be further subjected to a perforation process, so that the first spacer 140 will have a contact hole 142. On the other hand, the second layer body 130 can be formed on the second carrier substrate 108 first, and the second layer body 130 is formed with the second element, and then a single film layer is patterned through a photomask process, and the second layer 130 is formed on the second carrier substrate 108. An auxiliary spacer 190 is formed on the two-layer body 130.

As shown in FIG. 10B, the second layer body 130 can be disposed on the first layer body 110 to complete the pairing, and after the pairing, the second carrier substrate 108 can be separated from the second layer body 130. During the assembly process, the filler 120 is disposed between the first layer body 110 and the second layer body 130, and the auxiliary spacer 190 can be aligned with the contact hole 142 of the first spacer 140. Therefore, after the pairing is completed, the auxiliary spacer 190 will be inserted into the contact hole 142 of the first spacer 140. In addition, during the assembly process, the second layer body 130 squeezes the excess filler 120 so that the filler 120 can be filled between the first layer body 110 and the second layer body 130.

As shown in FIG. 10C, a perforation process can be followed, which includes removing a part of the second layer body 130 and at least a part of the auxiliary spacer 190, and an auxiliary contact hole 192 connected to the first layer body 110 may be formed in the auxiliary spacer 190. Then, a conductive material 150 may be formed in the auxiliary contact hole 192, and the conductive material 150 may pass through the second layer body 130, the first spacer 140, and the auxiliary spacer 190. Similarly, the conductive material 150 may be formed into a columnar structure Or have grooves. After that, the first carrier substrate 102 can be detached from the first layer body 110.

By using the above-mentioned manufacturing process, the alignment accuracy between the first layer body 110 and the second layer body 130 can be improved. In addition, in some embodiments, after the perforation process, the auxiliary spacer 190 may also be completely removed. In this way, the conductive material 150 will be formed in the contact hole 142 of the first spacer 140, and will be The first spacer 140 forms an interface, and since the inner wall surface of the first spacer 140 is originally covered by the auxiliary spacer 190, the cleanliness of the inner wall surface of the first spacer 140 can be maintained during the manufacturing process.

Please refer to FIG. 11A to FIG. 11G, which are schematic diagrams illustrating different stages of the manufacturing process of the electronic device according to some embodiments of the present disclosure. At least one difference between this embodiment and the aforementioned manufacturing method is that, in this embodiment, a second spacer can be formed on the second layer body to provide a drainage effect for the filler.

Specifically, as shown in FIG. 11A and FIG. 11B, which respectively illustrate the side sectional view angle and the front view angle in the manufacturing stage, the first layer body 110 may be formed on the first carrier substrate 102 first, and the first layer The body 110 is formed to have a first element, and then a single film layer is patterned through a photomask process to form a first spacer 140 on the first layer body 110. The first spacers 140 may be arranged in an array along a first direction D1 and a second direction D2 that are different from each other. The first direction D1 and the second direction D2 may be in an orthogonal relationship. For example, the first direction D1 may be vertical Direction, and the second direction D2 may be a lateral direction.

As shown in Figures 11C and 11D, which respectively illustrate the side sectional view and the front view in the manufacturing stage, the second layer body 130 can be formed on the second carrier substrate 108, and the second layer body 130 is formed as It has a second element, and then a single film layer is patterned through a photomask process to form a second spacer 200 on the second layer body. The second spacer 200 may extend along the first direction D1, so that the length of the second spacer 200 in the first direction D1 is greater than the length of the first spacer 140 in the first direction D1. In addition, the second spacer 200 The 200 is arranged along the second direction D2.

As shown in FIG. 11E, which shows the front view during the manufacturing stage, after the second spacer 200 is formed, a filler can be disposed on the second layer body 130. The configured filler 120 may be higher than the second spacer 200, so that the filler 120 can be squeezed and flowed outward in a sufficient amount in the subsequent manufacturing process.

As shown in Figure 11F, which shows the side cross-sectional view during the manufacturing stage, the second carrier substrate 108 and the second layer body 130 can be arranged on the first carrier substrate 102 and the first layer body 110 to complete the alignment. Group. During the pairing process, the second spacer 200 can be aligned with the space between the first spacers 140. Therefore, after the pairing is completed, the first spacers 140 and the second spacers 200 are arranged in a staggered manner. Furthermore, in the subsequent manufacturing process, a conductive material passing through the first spacer 140 will be formed. Therefore, between the first layer body 110 and the second layer body 130, the area outside the first spacer 140 can be regarded as It is an area where there is no electrical conduction requirement. Therefore, the second spacer 200 can be arranged in these areas where there is no electrical conduction requirement, so that the filler 120 can be squeezed to a wider distribution position, thereby improving the pressing Uniformity.

In addition, the height of the first spacer 140 is greater than the height of the second spacer 200. As a result, the second spacer 200 disposed between the first layer body 110 and the second layer body 130 can pass through the filler 120. It is completely separated from the first layer body 110 and the first spacer 140, which will cause the second layer body 130 to be supported only by the first spacer 140, while the second spacer 200 tends to provide the filler 120 Drainage effect.

As shown in FIG. 11G, which shows a side cross-sectional view during the manufacturing stage, the second carrier substrate 108 can be detached from the second layer body 130, and then a perforation process is performed, which includes removing a part of the second layer body 130 And a part of the first spacer 140, and a contact hole 142 connected to the first layer body 110 may be formed in the first spacer 140. Then, a conductive material 150 can be formed in the contact hole 142, and the conductive material passes through the second layer body 130 and the first spacer 140. Similarly, the conductive material 150 may be formed in a columnar structure or have grooves. After that, the first carrier substrate 102 can be detached from the first layer body 110.

By adopting the above-mentioned manufacturing process, since the second spacer 200 can provide a drainage effect to the filler 120, the uniformity of pressing can be improved. In addition, the use of the second spacer 200 to provide a drainage effect is structurally highly compatible, that is, the second spacer 200 can also be applied to other embodiments.

Please see FIG. 12A again. FIG. 12A is a schematic side cross-sectional view of the electronic device 100F according to the sixth embodiment of the present disclosure. At least one difference between this embodiment and the fourth embodiment is that the structure of this embodiment can be configured as a three-layer structure, while the structure of the fourth embodiment is configured as a two-layer structure.

Specifically, the electronic device 100F of this embodiment further includes a filler 210, a third spacer 220, a conductive material 230, and a third layer body 240. Among them, the first layer body 110, the second layer body 130, and the The first spacer 140, the conductive material 150C, and the filler 120 between them may be the same or similar to the component configuration of the fourth embodiment, and the component configurations that are the same or similar to the fourth embodiment will not be repeated here.

The third layer body 240 may be disposed on the second layer body 130 and includes a third element. Furthermore, the third layer body 240 is configured to include a third substrate 242, a pixel definition layer 244, and a light emitting element 246. , The driving electrode 248 and the third dielectric layer 250, wherein the light-emitting element 246 can be regarded as a third element.

The third substrate 242 may be a dielectric material, a light-transmitting substrate, a flexible substrate, or a combination thereof. The pixel definition layer 244 can be disposed on the lower surface of the third substrate 242 and can define the position where the light emitting element 246 is arranged. For example, the pixel definition layer 244 can have an opening, and the light emitting element 246 can be disposed under the third substrate 242. The surfaces are located inside the opening. The driving electrode 248 is disposed on the lower side of the pixel definition layer 244 and the light-emitting element 246, and is electrically connected to the light-emitting element 246. The third dielectric layer 250 is disposed on the lower surface of the pixel definition layer 244 and the driving electrode 248. In some embodiments, the light-emitting element 246 includes an upper electrode and a light-emitting layer, wherein the light-emitting layer is disposed between the driving electrode 248 and the upper electrode, so that the driving electrode 248 and the upper electrode can jointly apply a bias voltage to the light-emitting layer. In addition, in some embodiments, the light-emitting element 246 may be an organic light-emitting element, an inorganic light-emitting element, a micro light-emitting diode, or a sub-millimeter light-emitting diode.

The filler 210 and the third spacer 220 are disposed between the second layer body 130 and the third layer body 240. Specifically, the third spacer 220 is disposed on Between the first drain electrode 117 and the driving electrode 248, the bottom surface of the third spacer 220 is disposed on the second layer body 130 and covers at least part of the conductive material 150C, and the top surface of the third spacer 220 Then, the third dielectric layer 250 of the third layer body 240 can be contacted. The width of the top surface of the third spacer 220 may be greater than the width of the bottom surface thereof, that is, the third spacer 220 may be an inverted trapezoid. In addition, the third spacer 220 has a contact hole 222, and the contact hole 222 is located above the conductive material 150C.

The conductive material 230 may pass through the third layer body 240, such as the third substrate 242, the pixel definition layer 244, the driving electrode 248, and the third dielectric layer 250 of the third layer body 240, thereby extending into the third gap Into the contact hole 222 of the object 220 until it contacts the conductive material 150C.

Through the above configuration, the conductive material 230 passing through the third layer body 240 will form an interface with the conductive material 150C passing through the second layer body 130 to be electrically connected to the first thin film transistor 114. Furthermore, at least a part of the sidewall 232 of the conductive material 230 is surrounded by and in contact with the driving electrode 248 of the third layer body 240, so that the first thin film transistor 114 of the first layer body 110 can be electrically connected to the third layer body 240 of the light-emitting element 246. In this configuration, when the electronic device 100F is used as a display panel, and the wiring layers 162A and 162B are electrically connected to data lines and scan lines (not shown in FIG. 12A), the light-emitting element 246 is It can be driven by data lines and scan lines to emit light to display images.

On the other hand, in this configuration, the wiring layers 162A, 162B, and 162C can be formed as stretchable traces, so that the electronic device 100F has flexibility, and these stretchable traces can be filled due to filling. The objects 120, 210 and the spacers (and the first spacer 140 and the third spacer 220) are pressed and fixed to avoid structural collapse. For example, the wiring layers 162A, 162B can be The 162C and 162C are designed to extend along different directions, and the overlapping area in the top view view can be fixed by the compression of the fillers 120, 210 and the spacers, which can prevent the structure from collapsing due to translocation.

More specifically, please see FIGS. 12B and 12C. FIG. 12B shows a schematic side sectional view of the electronic device 100F applied as a stretchable structure, and FIG. 12C shows a schematic top view of the structure of the electronic device 100F. . The aforementioned structure described in FIG. 12A may be configured as a plurality of island-shaped structures 260. Specifically, the first layer body 110 and the third layer body 240 can be made into island shapes, and the island-shaped first layer body 110 and the third layer body 240 can be connected by the second layer body 130, wherein the second layer body 130 The layer body 130 may further include a stretchable substrate and a stretchable dielectric material, such as an organic material, so that the second layer body 130 can become a continuous elastic body with stretchability.

The data lines 262 and the scan lines 264 can be arranged alternately, and each island structure 260 can be electrically connected to the data line 262 and the scan line 264 correspondingly. As mentioned above, the data line 262 is electrically connected to the trace 162A of each island structure 260, and the scan line 264 is electrically connected to the trace 162B of each island structure 260, so as to drive the corresponding island structure The first thin film transistor 114 and the light-emitting element 246.

In this configuration, as shown in FIG. 12C and FIG. 12D, FIG. 12D is a schematic top view of the structure of the electronic device 100F after being stretched. In the case that the second layer body 130 is configured as an elastic body, and the data lines 262 and the scan lines 264 are also formed as stretchable traces, the spacing between the island structures 240 will be variable, so that the electronic device 100F can Therefore, it is extensible. For example, the electronic device 100F can be stretched as shown in Fig. 12C as shown in Fig. 12D. Painted state. In addition, as described above, each island structure 240 can be compressed and fixed by the filler and the spacer, so as to avoid structural collapse during the stretching process.

Please go back to Figure 12A. Although in this embodiment, the path electrically connected from the first layer body 110 to the third layer body 240 is configured to be formed of two conductive materials (ie, conductive materials 150C and 230), the content of the disclosure is not limited thereto. In other embodiments, the path electrically connected from the first layer body 110 to the third layer body 240 may also be configured such that a single conductive material penetrates the driving electrode 248 until it contacts the first drain electrode of the first thin film transistor 114. The electrode 117 is formed. In addition, although the wiring layer 162C is configured to connect the conductive material 150C in this embodiment, the content of the disclosure is not limited to this. In other embodiments, the wiring layer 162C can also be omitted according to actual needs. The wiring layer 162C is configured according to the requirement of connecting to the compensation circuit, or the wiring layer 162C can be omitted if there is no such requirement.

Please refer to FIG. 13A to FIG. 13C, which are respectively schematic side cross-sectional diagrams showing the electronic device at different stages in the manufacturing process according to some embodiments of the present disclosure. At least one difference between this embodiment and the aforementioned manufacturing method is that in this embodiment, a third layer body can be laminated on the second layer body.

Specifically, as shown in FIG. 13A, the second layer body 130 can be laminated on the first layer body 110 first, and the conductive material 150 is formed. The production process will not be repeated here. On the other hand, a third layer body 240 may be formed on the third carrier substrate 109, wherein the third carrier substrate 109 may be a glass substrate, and the third layer body 240 is formed with a third element, and then passes through the photomask process To pattern a single film layer to form a third spacer 220 on the third layer body 240. In the third spacer 220 After formation, the filler 210 can be disposed on the third layer body 240. The configured filler 210 may be higher than the third spacer 220, so that the filler 210 can be squeezed and flowed outward in a sufficient amount in the subsequent manufacturing process.

As shown in FIG. 13B, the third carrier substrate 109 and the third layer body 240 can be arranged on the second layer body 130 to complete the pairing, and after the pairing, the third carrier substrate 109 can be removed from the second layer body 130. The three-layer body 240 is detached. During the pairing process, the third spacer 220 can be aligned with the conductive material 150. Therefore, after the pairing is completed, a part of the third spacer 220 can form an interface with the conductive material 150, and another part of the third spacer 220 (that is, the third spacer 220 that does not form an interface with the conductive material 150) Then, the second layer body 130 can be contacted. In addition, the third spacer 220 forming an interface with the conductive material 150 may be compressed due to being squeezed.

As shown in FIG. 13C, a perforation process can be followed, which includes removing a part of the third layer body 240 and a part of the third spacer 220, and a connection to the conductive material 150 and a connection can be formed in the third spacer 220 To the contact hole 222 of the second layer body 130. Then, a conductive material 230 can be formed in the contact hole 222, and the conductive material 230 passes through the third layer body 240 and the third spacer 220. After that, the first carrier substrate 102 can be detached from the first layer body 110.

By using the above manufacturing process, the first layer body 110 can be electrically connected to the second layer body 130 and also to the third layer body 240, and the second layer body 130 can also be electrically connected to the third layer body 240 , So as to electrically conduct the layers of different layers.

In summary, the electronic device of the present disclosure includes a first layer body, a second layer body, a first spacer, a filler, and a conductive material. The first layer body and the second layer body each have a first element and a second element, and the second layer body is disposed at Above the first layer. The first spacer and the filler are arranged between the first layer body and the second layer body, and the first spacer has a contact hole, and the material of the filler is different from the material of the first spacer. The conductive material is located in the contact hole, and the first element and the second element are electrically connected by the conductive material. Through this configuration, in the manufacturing process of the electronic device, the contact hole can be formed after the distance between the first layer body and the second layer body is determined, and then the conductive material is formed in it. In this way, the contact hole can be It is formed under the condition that the expected depth can be determined, so that the contact hole can have a stable perforation size, and the perforation quality of the contact hole is also improved, thereby improving the reliability of the subsequently formed conductive material.

Although the content of this disclosure has been disclosed in a variety of ways as above, it is not intended to limit the content of this disclosure. Anyone who is familiar with this technique can make various changes and modifications without departing from the spirit and scope of the content of this disclosure. Therefore, The scope of protection of the contents of this disclosure shall be subject to those defined by the attached patent application scope.

100A‧‧‧Electronic device

110‧‧‧First Floor

120‧‧‧Filling

130‧‧‧Second layer

140‧‧‧First gap

142‧‧‧Contact hole

150、150’‧‧‧Conductive material

152‧‧‧Groove

W1‧‧‧Bottom width

W2‧‧‧Top width

Claims (13)

An electronic device, comprising: a first layer body having a first element; a second layer body disposed on the first layer body and having an upper surface, a lower surface opposite to the upper surface, and a A second element; a first spacer, disposed between the first layer body and the second layer body, and has a contact hole, wherein the lower surface of the second layer body is located between the first spacer and the Between the upper surface; a filler, which is disposed between the first layer body and the second layer body, and the material of the filler is different from the material of the first spacer; and at least one conductive material located in the first layer The two-layer body is in the contact hole and passes through the second layer body, wherein a part of the at least one conductive material is located on the upper surface and covers part of the upper surface, and the first element and the second The components are electrically connected by the conductive material. The electronic device described in item 1 of the scope of the patent application further includes: a second spacer disposed between the first layer body and the second layer body, and is connected to the first layer body and the first gap The objects are completely separated by the filler. According to the electronic device described in claim 2, wherein the second spacer extends along a first direction, so that the length of the second spacer in the first direction is greater than that of the first spacer in the first direction. Length in one direction Spend. The electronic device described in item 1 of the scope of the patent application further includes at least one conductive pad disposed between the conductive material and the second layer body, and the conductive material and the second element are electrically connected through the conductive pad connect. The electronic device described in claim 1, wherein the first element and the second element are each a thin film transistor, an inorganic light-emitting diode, an organic light-emitting diode, a fan-out wiring, and a touch circuit Or a combination. According to the electronic device described in claim 1, wherein the width of the first spacer is tapered, vertical, or gradually expanded in the thickness direction. The electronic device described in claim 1, wherein the second element includes a conductive layer, and the conductive material passes through the conductive layer, the conductive layer is a stretchable trace, and the stretchable trace is subjected to The filling material and the first gap material are pressed and fixed to avoid structural collapse. According to the electronic device described in claim 1, wherein the conductive material extends from the first layer body to beyond the interface between the second layer body and the filler. The electronic device described in item 1 of the scope of patent application, wherein the conductive material protrudes from the upper surface and the lower surface of the second layer body, and And completely penetrate the second layer body from the upper surface and the lower surface. The electronic device described in claim 1, wherein the second layer body further has a through hole, and the conductive material extends from the through hole of the second layer body to the contact hole of the first spacer . The electronic device described in claim 1, wherein the first layer body includes: a first substrate; a first gate insulating layer disposed on the first substrate; a first dielectric layer disposed on the first substrate On the first gate insulating layer, wherein the first element is located between the first dielectric layer and the first substrate; the second layer body includes: a second substrate having the upper surface; a second A dielectric layer, wherein the filler is located between the first dielectric layer and the second dielectric layer, and the first dielectric layer, the second dielectric layer, and the filler are located on the first substrate and Between the second substrate; and a second gate insulating layer located between the second substrate and the second dielectric layer, wherein the second element is located between the second substrate and the second dielectric layer In between, the conductive material passes through the second substrate, the second gate insulating layer and the second dielectric layer, extends into the contact hole of the first spacer, and further passes through the first dielectric. The electrical layer is electrically connected to the first element. A manufacturing method of an electronic device, including: A first spacer is formed on a first layer body; after the first spacer is formed, a filler is disposed on the first layer body; a second layer body is covered to the first spacer and On the filler; performing a perforation process to remove part of the second layer body; and forming at least one conductive material passing through the second layer body and the first spacer, wherein a part of the at least one conductive material It is located on an upper surface of the second layer body and covers part of the upper surface. According to the manufacturing method of the electronic device described in claim 12, the step of forming the conductive material is performed after the step of covering the second layer body on the first spacer and the filler.

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