TWI744417B - 具有浮動遮蔽環的製程套件 - Google Patents
具有浮動遮蔽環的製程套件 Download PDFInfo
- Publication number
- TWI744417B TWI744417B TW106139809A TW106139809A TWI744417B TW I744417 B TWI744417 B TW I744417B TW 106139809 A TW106139809 A TW 106139809A TW 106139809 A TW106139809 A TW 106139809A TW I744417 B TWI744417 B TW I744417B
- Authority
- TW
- Taiwan
- Prior art keywords
- adapter
- shielding ring
- ring
- main body
- shielding
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 112
- 230000008569 process Effects 0.000 title claims abstract description 112
- 238000007667 floating Methods 0.000 title description 6
- 238000012546 transfer Methods 0.000 claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 20
- 239000012212 insulator Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 81
- 238000005477 sputtering target Methods 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- 239000010935 stainless steel Substances 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000002826 coolant Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 41
- 238000004544 sputter deposition Methods 0.000 description 29
- 239000000463 material Substances 0.000 description 16
- 238000001816 cooling Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN201611039546 | 2016-11-19 | ||
| IN201611039546 | 2016-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201833351A TW201833351A (zh) | 2018-09-16 |
| TWI744417B true TWI744417B (zh) | 2021-11-01 |
Family
ID=62144331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106139809A TWI744417B (zh) | 2016-11-19 | 2017-11-17 | 具有浮動遮蔽環的製程套件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10648071B2 (https=) |
| JP (1) | JP7117300B2 (https=) |
| KR (1) | KR102474786B1 (https=) |
| CN (1) | CN110036136B (https=) |
| TW (1) | TWI744417B (https=) |
| WO (1) | WO2018094024A1 (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10886113B2 (en) | 2016-11-25 | 2021-01-05 | Applied Materials, Inc. | Process kit and method for processing a substrate |
| WO2020090164A1 (ja) * | 2018-10-30 | 2020-05-07 | 株式会社アルバック | 真空処理装置 |
| CN109735814B (zh) * | 2019-01-23 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 磁控溅射反应腔室的冷却组件及其磁控溅射设备 |
| US11887878B2 (en) * | 2019-06-28 | 2024-01-30 | Applied Materials, Inc. | Detachable biasable electrostatic chuck for high temperature applications |
| US11361982B2 (en) * | 2019-12-10 | 2022-06-14 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of electrostatic chucks |
| KR102791334B1 (ko) | 2019-12-31 | 2025-04-08 | 삼성전자주식회사 | 에지 링 및 이를 갖는 기판 처리 장치 |
| US11935728B2 (en) * | 2020-01-31 | 2024-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of manufacturing a semiconductor device |
| US20210265137A1 (en) * | 2020-02-26 | 2021-08-26 | Intel Corporation | Reconditioning of reactive process chamber components for reduced surface oxidation |
| USD934315S1 (en) | 2020-03-20 | 2021-10-26 | Applied Materials, Inc. | Deposition ring for a substrate processing chamber |
| US11339466B2 (en) * | 2020-03-20 | 2022-05-24 | Applied Materials, Inc. | Heated shield for physical vapor deposition chamber |
| USD941372S1 (en) | 2020-03-20 | 2022-01-18 | Applied Materials, Inc. | Process shield for a substrate processing chamber |
| USD941371S1 (en) | 2020-03-20 | 2022-01-18 | Applied Materials, Inc. | Process shield for a substrate processing chamber |
| US11492697B2 (en) * | 2020-06-22 | 2022-11-08 | Applied Materials, Inc. | Apparatus for improved anode-cathode ratio for rf chambers |
| JP7223738B2 (ja) * | 2020-11-12 | 2023-02-16 | 株式会社アルバック | スパッタリング装置 |
| US20220178021A1 (en) * | 2020-12-08 | 2022-06-09 | Skytech Co., Ltd. | Wafer fixing mechanism and wafer pre-cleaning machine using the wafer fixing mechanism |
| TWI749956B (zh) * | 2020-12-18 | 2021-12-11 | 天虹科技股份有限公司 | 薄膜沉積裝置 |
| KR20230041917A (ko) | 2021-09-17 | 2023-03-27 | 삼성전자주식회사 | 건식 식각 장치 및 이를 이용한 웨이퍼 식각 시스템 |
| US12183559B2 (en) | 2021-10-22 | 2024-12-31 | Applied Materials, Inc. | Apparatus for temperature control in a substrate processing chamber |
| CN116641024A (zh) * | 2022-02-15 | 2023-08-25 | 成都辰显光电有限公司 | 物理气相沉积镀膜设备及镀膜方法 |
| USD1066275S1 (en) | 2022-04-04 | 2025-03-11 | Applied Materials, Inc. | Baffle for anti-rotation process kit for substrate processing chamber |
| USD1049067S1 (en) * | 2022-04-04 | 2024-10-29 | Applied Materials, Inc. | Ring for an anti-rotation process kit for a substrate processing chamber |
| US20230357929A1 (en) * | 2022-05-05 | 2023-11-09 | Applied Materials, Inc. | Apparatus and methods to promote wafer edge temperature uniformity |
| US20250327170A1 (en) * | 2022-07-08 | 2025-10-23 | Tosoh Smd, Inc. | Dynamic vacuum seal system for physical vapor deposition sputter applications |
| USD1121576S1 (en) | 2022-07-14 | 2026-04-07 | Applied Materials Inc. | Purge ring for a substrate processing chamber |
| US20240018648A1 (en) * | 2022-07-14 | 2024-01-18 | Applied Materials, Inc. | Purge Ring for Reduced Substrate Backside Deposition |
| US12371790B2 (en) * | 2022-08-17 | 2025-07-29 | Sky Tech Inc. | Wafer carrier with adjustable alignment devices and deposition equipment using the same |
| USD1086087S1 (en) * | 2023-03-30 | 2025-07-29 | Samsung Electronics Co., Ltd. | CMP (chemical mechanical planarization) retaining ring |
| US20240384396A1 (en) * | 2023-05-18 | 2024-11-21 | Applied Materials, Inc. | Biased or floating process shield to reduce ion loss to control film deposition and improve step coverage |
| USD1109856S1 (en) | 2023-07-07 | 2026-01-20 | Tosoh Smd, Inc. | Dynamic vacuum seal system isolation ring for physical vapor deposition sputter applications |
| US12392023B1 (en) * | 2024-05-03 | 2025-08-19 | Applied Materials, Inc. | Methods and apparatus for depositing amorphous indium tin oxide film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002294441A (ja) * | 2001-03-30 | 2002-10-09 | Anelva Corp | バイアススパッタリング装置 |
| TW201217569A (en) * | 2010-05-14 | 2012-05-01 | Applied Materials Inc | Process kit shield for improved particle reduction |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5922133A (en) | 1997-09-12 | 1999-07-13 | Applied Materials, Inc. | Multiple edge deposition exclusion rings |
| US6296712B1 (en) | 1997-12-02 | 2001-10-02 | Applied Materials, Inc. | Chemical vapor deposition hardware and process |
| US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| US7718045B2 (en) | 2006-06-27 | 2010-05-18 | Applied Materials, Inc. | Ground shield with reentrant feature |
| US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
| CN102007572B (zh) * | 2008-04-16 | 2013-01-16 | 应用材料公司 | 晶圆处理沉积屏蔽构件 |
| US20150170955A1 (en) * | 2013-12-17 | 2015-06-18 | Applied Materials, Inc. | Actively-cooled shadow ring for heat dissipation in plasma chamber |
| CN105506570B (zh) | 2014-10-16 | 2018-11-06 | 北京北方华创微电子装备有限公司 | 一种压环组件及物理气相沉积设备 |
-
2017
- 2017-11-16 JP JP2019526557A patent/JP7117300B2/ja active Active
- 2017-11-16 CN CN201780075172.7A patent/CN110036136B/zh active Active
- 2017-11-16 WO PCT/US2017/061979 patent/WO2018094024A1/en not_active Ceased
- 2017-11-16 US US15/814,696 patent/US10648071B2/en active Active
- 2017-11-16 KR KR1020197017687A patent/KR102474786B1/ko active Active
- 2017-11-17 TW TW106139809A patent/TWI744417B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002294441A (ja) * | 2001-03-30 | 2002-10-09 | Anelva Corp | バイアススパッタリング装置 |
| TW201217569A (en) * | 2010-05-14 | 2012-05-01 | Applied Materials Inc | Process kit shield for improved particle reduction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110036136B (zh) | 2022-05-24 |
| US20180142340A1 (en) | 2018-05-24 |
| KR20190075163A (ko) | 2019-06-28 |
| TW201833351A (zh) | 2018-09-16 |
| JP7117300B2 (ja) | 2022-08-12 |
| JP2019535905A (ja) | 2019-12-12 |
| KR102474786B1 (ko) | 2022-12-05 |
| WO2018094024A1 (en) | 2018-05-24 |
| CN110036136A (zh) | 2019-07-19 |
| US10648071B2 (en) | 2020-05-12 |
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