本發明者等人進行努力研究，結果驚奇地發現：藉由於含有氧化鈰(以下，亦稱為「二氧化鈰」)粒子作為研磨粒之研磨液組合物中含有特定之寡糖，能夠確保研磨速度，並且提昇研磨選擇性及抑制研磨不均，從而完成本發明。 即，本發明係關於一種研磨液組合物，其含有氧化鈰粒子A、寡糖B及水，並且上述寡糖B係包含3個以上且5個以下之葡萄糖進行鍵結而成之糖，且8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下的寡糖。根據本發明之研磨液組合物，能夠確保研磨速度，並且提昇研磨選擇性及抑制研磨不均。 本發明之效果表現之機制之詳細內容雖不明確，但推定如下。 認為通常於使用含有氧化鈰粒子作為研磨粒之研磨液組合物之研磨中，氮化矽膜等研磨終止膜受到因水分子所引起之水解而成為與氧化矽膜等被研磨膜同等之組成，容易藉由氧化鈰粒子進行研磨。相對於此，推定於使用本發明之研磨液組合物之研磨中，藉由特定之寡糖B與水分子進行水合，可抑制氮化矽膜等研磨終止膜之水解，抑制藉由氧化鈰之研磨。進而，推測本發明之研磨液組合物藉由含有特定之寡糖B，對氮化矽膜等研磨終止膜之研磨抑制能力變高，可抑制氮化矽膜等研磨終止膜之研磨不均產生。 但是，本發明可不限定於該等機制而解釋。 於本發明中，「研磨選擇性」係與被研磨膜之研磨速度相對於研磨終止膜之研磨速度之比(被研磨膜之研磨速度/研磨終止膜之研磨速度)同義，若「研磨選擇性」較高，則意指上述研磨速度比會較大。 「寡糖」一般分類於單糖與多糖之間，係少量之單糖進行糖苷鍵結而成之糖之總稱。作為構成寡糖之單糖之數量(聚合度)，例如可列舉2～20左右。 [氧化鈰(二氧化鈰)粒子A] 本發明之研磨液組合物含有氧化鈰粒子A(以下，亦簡稱為「粒子A」)作為研磨粒。關於粒子A之製造方法、形狀及表面狀態，可無特別限定。作為粒子A，例如可列舉：膠體二氧化鈰、不定形二氧化鈰、二氧化鈰包覆二氧化矽等。膠體二氧化鈰例如可利用日本專利特表2010-505735號公報之實施例1～4中記載之方法，藉由增層製程而獲得。不定形二氧化鈰例如可將碳酸鈰或硝酸鈰等鈰化合物進行焙燒、粉碎而獲得。作為二氧化鈰包覆二氧化矽，例如可列舉具有利用日本專利特開2015-63451號公報之實施例1～14或日本專利特開2013-119131號公報之實施例1～4中記載之方法，藉由粒狀二氧化鈰被覆二氧化矽粒子表面之至少一部分而成之構造之複合粒子，該複合粒子例如可藉由使二氧化鈰沈積於二氧化矽粒子而獲得。就提昇研磨速度之觀點而言，較佳為膠體二氧化鈰。就減少研磨後之殘留物之觀點而言，較佳為二氧化鈰包覆二氧化矽。粒子A可為1種二氧化鈰粒子，亦可為2種以上之二氧化鈰粒子之組合。 就提昇研磨速度之觀點而言，粒子A之平均一次粒徑較佳為5 nm以上，更佳為10 nm以上，進而較佳為20 nm以上，而且，就抑制研磨損傷產生之觀點而言，較佳為300 nm以下，更佳為200 nm以下，進而較佳為150 nm以下。於本發明中，粒子A之平均一次粒徑係使用藉由BET(氮吸附)法算出之BET比表面積S(m2
/g)而算出。BET比表面積可藉由實施例中記載之方法進行測定。 作為粒子A之形狀，例如可列舉：大致球狀、多面體狀、樹莓狀。 若將粒子A、寡糖B及水之合計含量設為100質量%，則就確保研磨速度及提昇研磨選擇性之觀點而言，本發明之研磨液組合物中之粒子A之含量較佳為0.05質量%以上，更佳為0.10質量%以上，進而較佳為0.20質量%以上，而且，就相同之觀點而言，較佳為10.0質量%以下，更佳為7.5質量%以下，進而較佳為5.0質量%以下，進而更佳為2.5質量%以下，進而更佳為1.0質量%以下。於粒子A為2種以上之二氧化鈰粒子之組合之情形時，粒子A之含量係指該等之合計含量。 [寡糖B] 本發明之研磨液組合物含有寡糖B。就確保研磨速度，提昇研磨選擇性及抑制研磨不均之觀點而言，寡糖B較佳為包含3個以上且5個以下之葡萄糖進行鍵結而成之糖，且8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下，並且為除環狀以外之直鏈或支鏈狀之寡糖。上述3個以上且5個以下之葡萄糖之鍵結較佳為葡糖苷鍵結。上述3個以上且5個以下之葡萄糖進行鍵結而成之糖較佳為寡糖B之有效成分。作為構成本發明中之寡糖B之單糖、即寡糖B之結構單元，就確保研磨速度，提昇研磨選擇性及抑制研磨不均之觀點而言，例如較佳為僅為葡萄糖。寡糖B可為1種寡糖，亦可為2種以上之寡糖之組合。於本發明中，「8個以上之葡萄糖進行鍵結而成之糖之含量」係指寡糖B中之8個以上之葡萄糖進行鍵結而成之糖的比率。 作為寡糖B，就確保研磨速度，提昇研磨選擇性及抑制研磨不均之觀點而言，寡糖B中之分子量15,000以上之糖之含量較佳為0質量%以上，而且，較佳為10質量%以下，更佳為5質量%以下，進而較佳為4質量%以下。 作為寡糖B，就確保研磨速度，提昇研磨選擇性及抑制研磨不均之觀點而言，可列舉選自龍膽寡糖B1、異麥芽寡糖B2、麥芽寡糖B3及黑麯黴寡糖B4中之至少1種。於該等中，就確保研磨速度及提昇研磨選擇性之觀點而言，較佳為選自龍膽寡糖B1、異麥芽寡糖B2及黑麯黴寡糖B4中之1種或2種以上之組合，更佳為龍膽寡糖B1及異麥芽寡糖B2中之至少一者，更進一步較佳為龍膽寡糖B1。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明中之龍膽寡糖B1例如可列舉包含3個以上且5個以下之葡萄糖主要進行β-1,6-葡糖苷鍵結而成之直鏈寡糖作為有效成分者，具體而言，可列舉包含龍膽三糖(三糖)、龍膽四糖(四糖)等作為有效成分者。龍膽寡糖B1例如可藉由使β-葡糖苷酶作用於葡萄糖而製造。有於藉由此種製造方法而獲得之龍膽寡糖B1或市售之龍膽寡糖B1中，除上述有效成分以外，亦包含單糖之葡萄糖或果糖、二糖之龍膽二糖、聚合度6以上之糖等其他成分之情況，該等其他成分可於不會大幅有損本發明之效果之範圍內包含於本發明之研磨液組合物。而且，就確保研磨速度及提昇研磨選擇性之觀點而言，龍膽寡糖B1只要8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下即可。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明中之異麥芽寡糖B2例如可列舉包含3個以上且5個以下之葡萄糖進行α-1,4及/或α-1,6-葡糖苷鍵結而成之支鏈寡糖作為有效成分者，具體而言，可列舉包含異麥芽三糖(三糖)、潘糖(三糖)等作為有效成分者。異麥芽寡糖B2例如可藉由包括如下步驟之製造方法而製造：對葡聚糖進行酸處理而將葡聚糖分子中之α-1,6-葡糖苷鍵以外之鍵選擇性地分解；使內切葡聚糖酶、或固定化於載體之內切葡聚糖酶作用於該經酸處理之葡聚糖溶液，進行酵素反應。有於藉由此種製造方法而獲得之異麥芽寡糖B2或市售之異麥芽寡糖B2中，除上述有效成分以外，亦包含異麥芽糖(二糖)、聚合度6以上之糖等其他成分之情況，該等其他成分可於不會大幅有損本發明之效果之範圍內包含於本發明之研磨液組合物。而且，就確保研磨速度及提昇研磨選擇性之觀點而言，異麥芽寡糖B2只要8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下即可。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明中之麥芽寡糖B3例如可列舉包含3個以上且5個以下之葡萄糖進行α-1,4葡糖苷鍵結而成之直鏈寡糖作為有效成分者，具體而言，可列舉包含麥芽三糖(三糖)、麥芽四糖(四糖)等作為有效成分者。麥芽寡糖B3例如可使麥芽寡糖生成澱粉酶作用於澱粉而製造。有於藉由此種製造方法而獲得之麥芽寡糖B3或市售之麥芽寡糖B3中，除上述有效成分以外，亦包含麥芽糖(二糖)、聚合度6以上之糖等其他成分之情況，該等其他成分可於不會大幅有損本發明之效果之範圍內包含於本發明之研磨液組合物。而且，就確保研磨速度及提昇研磨選擇性之觀點而言，麥芽寡糖B3只要8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下即可。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明中之黑麯黴寡糖B4例如可列舉包含3個以上且5個以下之葡萄糖進行α-1,3及/或α-1,4-葡糖苷鍵結而成之支鏈寡糖作為有效成分者，具體而言，可列舉包含黑麯黴三糖(三糖)、黑麯黴糖基葡萄糖(三糖)、黑麯黴四糖(四糖)、黑麯黴糖基麥芽糖(四糖)等作為有效成分者。黑麯黴寡糖B4例如可以麥芽糖溶液作為基質，使黑麯黴寡糖生成酵素發揮作用而製造。有於藉由此種製造方法而獲得之黑麯黴寡糖B4或市售之黑麯黴寡糖B4中，除上述有效成分以外，亦包含黑麯黴二糖(二糖)、聚合度6以上之糖等其他成分之情況，該等其他成分可於不會大幅有損本發明效果之範圍內包含於本發明之研磨液組合物。而且，就確保研磨速度及提昇研磨選擇性之觀點而言，黑麯黴寡糖B4只要8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下即可。 就確保研磨速度、提昇研磨選擇性及抑制研磨不均之觀點而言，寡糖B之重量平均分子量較佳為未達800，更佳為750以下，進而較佳為700以下，進而較佳為600以下，而且，較佳為300以上，更佳為350以上，進而較佳為400以上。寡糖B之重量平均分子量可藉由與下述化合物C之重量平均分子量相同之測定方法而算出。 若將粒子A、寡糖B及水之合計含量設為100質量%，則就抑制研磨不均及抑制研磨終止膜之研磨之觀點而言，本發明之研磨液組合物中之寡糖B之含量較佳為0.2質量%以上，更佳為0.3質量%以上，進而較佳為0.4質量%以上，進而較佳為0.5質量%以上，進而較佳為0.8質量%以上，而且，就確保研磨速度及提昇研磨選擇性之觀點而言，較佳為2.5質量%以下，更佳為2.0質量%以下，進而較佳為1.5質量%以下，進而較佳為1.1質量%以下。就相同之觀點而言，上述寡糖B之含量較佳為0.1質量%以上且2.5質量%以下，更佳為0.3質量%以上且2.5質量%以下，進而較佳為0.4質量%以上且2.0質量%以下，進而較佳為0.5質量%以上且1.5質量%以下。於寡糖B為2種以上之寡糖之組合之情形時，寡糖B之含量係指該等之合計含量。 若將粒子A、寡糖B及水之合計含量設為100質量%，則就抑制研磨不均及抑制研磨終止膜之研磨之觀點而言，本發明之研磨液組合物中之3個以上且5個以下之葡萄糖進行鍵結而成之糖的含量較佳為0.05質量%以上，更佳為0.08質量%以上，進而較佳為0.10質量%以上，進而較佳為0.12質量%以上，進而較佳為0.15質量%以上，進而較佳為0.25質量%以上，進而較佳為0.35質量%以上，而且，就確保研磨速度及提昇研磨選擇性之觀點而言，較佳為1.0質量%以下，更佳為0.7質量%以下，進而較佳為0.5質量%以下。 就確保研磨速度，提昇研磨選擇性及抑制研磨不均之觀點而言，本發明之研磨液組合物中之寡糖B之含量相對於粒子A之含量的比B/A較佳為0.01以上，更佳為0.1以上，進而較佳為0.3以上，而且，較佳為20以下，更佳為10以下，進而較佳為5以下。 [化合物C] 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明之研磨液組合物較佳為含有具有陰離子性基之化合物C(以下，亦稱為「化合物C」)作為研磨助劑。化合物C可為1種，亦可為2種以上之組合。 作為化合物C之陰離子性基，可列舉：羧酸基、磺酸基、硫酸酯基、磷酸酯基、膦酸基等。該等陰離子性基可採用經中和之鹽之形態。作為陰離子性基採用鹽之形態之情形時之抗衡離子，可列舉：金屬離子、銨離子、烷基銨離子等，就提昇半導體基板之品質之觀點而言，較佳為銨離子。 作為化合物C，例如可列舉選自一元羧酸、檸檬酸及陰離子性聚合物中之至少1種。 作為化合物C為陰離子性聚合物之情形時之具體例，可列舉選自如下化合物中之至少1種：聚丙烯酸、聚甲基丙烯酸、聚苯乙烯磺酸、(甲基)丙烯酸與單甲氧基聚乙二醇單(甲基)丙烯酸酯之共聚物、具有陰離子基之(甲基)丙烯酸酯與單甲氧基聚乙二醇單(甲基)丙烯酸酯之共聚物、(甲基)丙烯酸烷基酯與(甲基)丙烯酸及單甲氧基聚乙二醇單(甲基)丙烯酸酯之共聚物、該等之鹼金屬鹽、及該等之銨鹽，就提昇半導體基板之品質之觀點而言，較佳為選自聚丙烯酸及其銨鹽中之至少1種。 於化合物C為陰離子性聚合物之情形時，就確保研磨速度及提昇研磨選擇性之觀點而言，化合物C之重量平均分子量較佳為1,000以上，更佳為10,000以上，進而較佳為20,000以上，而且，較佳為550萬以下，更佳為100萬以下，進而較佳為10萬以下。 於本發明中，重量平均分子量可使用液相層析儀(日立製作所股份有限公司製造，L-6000型高效液相層析儀)，藉由凝膠滲透層析法(GPC)於下述條件下進行測定。 檢測器：Shodex RI SE-61示差折射率檢測器 管柱：使用將東曹股份有限公司製造之G4000PWXL與G2500PWXL串聯連接而成者。 溶離液：以0.2 M磷酸緩衝液/乙腈＝90/10(體積比)調整為0.5 g/100 mL之濃度，使用20 μL。 管柱溫度：40℃ 流速：1.0 mL/min 標準聚合物：分子量已知之單分散聚乙二醇 於化合物C為一元羧酸之情形時，作為化合物C，例如可列舉選自乙醯丙酸、丙酸、香草酸、對羥基苯甲酸及甲酸中之至少1種。認為於本發明之研磨液組合物包含一元羧酸作為化合物C之情形時，保存穩定性變得良好。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明之研磨液組合物中之化合物C之含量較佳為0.001質量%以上，更佳為0.0015質量%以上，進而較佳為0.0025質量%以上，而且，較佳為1.0質量%以下，更佳為0.8質量%以下，進而較佳為0.6質量%以下。於化合物C為2種以上之組合之情形時，化合物C之含量係指該等之合計含量。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明之研磨液組合物中之化合物C之含量相對於粒子A之含量的比(C/A)較佳為0.0001以上，更佳為0.0005以上，進而較佳為0.001以上，而且，較佳為1以下，更佳為0.1以下，進而較佳為0.01以下。 [水] 本發明之研磨液組合物含有水作為介質。就提昇半導體基板之品質之觀點而言，該水更佳為包含離子交換水、蒸餾水、超純水等水。關於本發明之研磨液組合物中之水之含量，若將粒子A、寡糖B、水、視需要添加之化合物C及下述任意成分之合計含量設為100質量%，則可設為除粒子A、寡糖B、化合物C及任意成分以外之剩餘量。 [任意成分] 本發明之研磨液組合物可於無損本發明之效果之範圍內含有pH值調整劑、化合物C以外之界面活性劑、增黏劑、分散劑、防銹劑、鹼性物質、研磨速度提昇劑等任意成分。就確保研磨速度之觀點而言，該等任意成分之含量較佳為0.001質量%以上，更佳為0.0025質量%以上，進而較佳為0.01質量%以上，就提昇研磨選擇性之觀點而言，較佳為1質量%以下，更佳為0.5質量%以下，進而較佳為0.1質量%以下。 作為上述pH值調整劑，例如可列舉：酸性化合物及鹼性化合物。作為酸性化合物，例如可列舉：鹽酸、硝酸、硫酸等無機酸；乙酸、草酸、檸檬酸及蘋果酸等有機酸等。其中，就通用性之觀點而言，較佳為選自鹽酸、硝酸及乙酸中之至少1種，更佳為選自鹽酸及乙酸中之至少1種。作為鹼性化合物，例如可列舉：氨及氫氧化鉀等無機鹼性化合物；烷基胺及烷醇胺等有機鹼性化合物等。其中，就提昇半導體基板之品質之觀點而言，較佳為選自氨及烷基胺中之至少1種，更佳為氨。 作為上述化合物C以外之界面活性劑，可列舉成分C以外之陰離子性界面活性劑及非離子性界面活性劑(nonionic detergent)等。作為陰離子性界面活性劑，例如可列舉：烷基醚乙酸鹽、烷基醚磷酸鹽及烷基醚硫酸鹽等。作為非離子性界面活性劑，例如可列舉：聚丙烯醯胺等非離子性聚合物、及聚氧伸烷基烷基醚、聚氧乙烯二苯乙烯化苯基醚等。 本發明之研磨液組合物於一或複數個實施形態中，可實質上不包含非離子性界面活性劑。於本發明中，「實質上不包含非離子性界面活性劑」係指研磨液組合物中之非離子性界面活性劑之含量為0.1質量%以下。就確保氧化矽膜之研磨速度及提昇研磨選擇性之觀點而言，本發明之研磨液組合物中之非離子性界面活性劑之含量較佳為未達0.01質量%，進而較佳為0.005質量%以下，進而較佳為實質上為0質量%。 本發明之研磨液組合物於一或複數個實施形態中，可包含具有4個以上之胺基之化合物，亦可不包含。 [研磨液組合物] 本發明之研磨液組合物可藉由包括如下步驟之製造方法而製造：利用公知之方法調配包含粒子A及水之漿料、寡糖B、以及視需要之化合物C及任意成分等。例如，本發明之研磨液組合物可採用至少調配粒子A、寡糖B及水而成者。於本發明中，「調配」包括同時或依序混合粒子A、寡糖B及水、以及視需要之化合物C及其他任意成分之操作。混合之順序並無特別限定。上述調配例如可使用均質混合機、均質機、超音波分散機及濕式球磨機等混合器而進行。本發明之研磨液組合物之製造方法中之各成分之調配量可與上述本發明之研磨液組合物中之各成分之含量相同。 本發明之研磨液組合物之實施形態可為於預先混合所有成分之狀態下供給至市場之所謂1液型，亦可為於使用時加以混合之所謂2液型。於2液型之研磨液組合物中，分為第1溶液及第2溶液，研磨液組合物例如可為包含粒子A混合於水中而成之第1溶液、及寡糖B混合於水中而成之第2溶液，且混合第1溶液與第2溶液者。第1溶液與第2溶液之混合可於供給至研磨對象之表面之前進行，亦可分別供給該等並於被研磨基板之表面上進行混合。 就確保研磨速度及提昇研磨選擇性之觀點而言，本發明之研磨液組合物之pH值較佳為4.0以上，更佳為5.0以上，進而較佳為6.0以上，而且，較佳為9.0以下，更佳為未達9.0，進而較佳為8.5以下，進而較佳為8.0以下。於本發明中，研磨液組合物之pH值係25℃下之值，係使用pH計所測得之值。具體而言，本發明中之研磨液組合物之pH值可藉由實施例中記載之方法進行測定。 於本發明中，「研磨液組合物中之各成分之含量」係指將研磨液組合物用於研磨時的上述各成分之含量。本發明之研磨液組合物可於無損其穩定性之範圍內，於經濃縮之狀態下進行保存及供給。於此情形時，就可使製造/傳輸成本較低之方面而言較佳。而且，該濃縮液可視需要藉由上述水系介質適當進行稀釋而於研磨步驟中使用。作為稀釋比率，較佳為5～100倍。 [被研磨膜] 作為本發明之研磨液組合物設為研磨之對象之被研磨膜，例如可列舉氧化矽膜。因此，本發明之研磨液組合物可較佳地用於形成半導體基板之元件分離構造之步驟中所進行的氧化矽膜之研磨。 [研磨液套組] 本發明係關於一種研磨液套組，其係用以製造研磨液組合物者，且包含：粒子A分散液，其係將含有上述粒子A之分散液收納於容器中而成；及上述寡糖B，其係收納於與上述粒子A分散液不同之容器中。根據本發明之研磨液套組，可提供一種可獲得能夠確保研磨速度，並且提昇研磨選擇性及抑制研磨不均之研磨液組合物的研磨液套組。 作為本發明之研磨液套組，例如可列舉於含有上述粒子A之分散液(第1溶液)、及包含寡糖B之溶液(第2溶液)相互未混合之狀態下保存，於使用時混合該等之研磨液套組(2液型研磨液組合物)。可於混合上述第1溶液與上述第2溶液後，視需要使用水進行稀釋。於第2溶液中可包含可調配於被研磨物之研磨中使用之研磨液組合物中之其他成分。作為可調配於研磨液組合物中之其他成分，例如可列舉：上述化合物C、酸、氧化劑、雜環芳香族化合物、脂肪族胺化合物、脂環式胺化合物等。於上述第1溶液及第2溶液中，可分別視需要包含任意成分。作為該任意成分，例如可列舉：增黏劑、分散劑、防銹劑、鹼性物質、研磨速度提昇劑、界面活性劑、高分子化合物等。 [半導體基板之製造方法] 本發明係關於一種半導體基板之製造方法(以下，亦稱為「本發明之半導體基板之製造方法」)，其包括使用本發明之研磨液組合物研磨被研磨膜之步驟(以下，亦稱為「使用本發明之研磨液組合物之研磨步驟」)。根據本發明之半導體基板之製造方法，能夠確保研磨步驟中之研磨速度，並且提昇研磨選擇性及抑制研磨不均，故而可發揮可高效率地製造基板品質提昇之半導體基板之效果。 作為本發明之半導體基板之製造方法之具體例，首先，藉由將矽基板於氧化爐內暴露於氧氣而使二氧化矽層沈積於其表面，繼而，於該二氧化矽層上藉由例如CVD法(chemical vapor deposition method，化學氣相沈積法)形成氮化矽(Si3
N4
)膜或多晶矽膜等研磨終止膜。其次，於包含矽基板、及配置於上述矽基板之一主面側之研磨終止膜之基板、例如於矽基板之二氧化矽層上形成有研磨終止膜之基板，使用光微影技術形成溝槽。繼而，例如，藉由使用矽烷氣體及氧氣之CVD法，形成作為溝槽嵌入用被研磨膜之氧化矽(SiO2
)膜，獲得研磨終止膜經被研磨膜(氧化矽膜)覆蓋之被研磨基板。藉由形成氧化矽膜，上述溝槽被氧化矽膜之氧化矽填滿，研磨終止膜之上述矽基板側之面之相反面經氧化矽膜被覆。如此形成之氧化矽膜之矽基板側之面之相反面具有與下層之凸凹對應地形成之階差。繼而，藉由CMP法，研磨氧化矽膜直至至少研磨終止膜之矽基板側之面之相反面露出，更佳為研磨氧化矽膜直至氧化矽膜之表面與研磨終止膜之表面成為同一平面。本發明之研磨液組合物可用於進行藉由該CMP法之研磨之步驟中。 於藉由CMP法之研磨中，於使被研磨基板之表面與研磨墊接觸之狀態下，將本發明之研磨液組合物供給至該等之接觸部位，並且使被研磨基板及研磨墊相對移動，藉此使被研磨基板之表面之凹凸部分平坦化。於本發明之半導體基板之製造方法中，可於矽基板之二氧化矽層與研磨終止膜之間形成其他絕緣膜，亦可於被研磨膜(例如氧化矽膜)與研磨終止膜(例如氮化矽膜)之間形成其他絕緣膜。 於使用本發明之研磨液組合物之研磨步驟中，研磨墊之轉數例如可設定為30～200 r/分鐘，被研磨基板之轉數例如可設定為30～200 r/分鐘，設定於具備研磨墊之研磨裝置之研磨負載例如可設定為20～500 g重/cm2
，研磨液組合物之供給速度例如可設定為10～500 mL/分鐘以下。於研磨液組合物為2液型研磨液組合物之情形時，藉由調整第1溶液及第2溶液之各者之供給速度(或供給量)，可調整被研磨膜及研磨終止膜之各者之研磨速度、或被研磨膜與研磨終止膜之研磨速度比(研磨選擇性)。 於使用本發明之研磨液組合物之研磨步驟中，就提昇生產性之觀點而言，被研磨膜(例如氧化矽膜)之研磨速度較佳為2000 Å/分鐘以上，更佳為3000 Å/分鐘以上，進而較佳為4000 Å/分鐘以上。 於使用本發明之研磨液組合物之研磨步驟中，就提昇研磨選擇性及縮短研磨時間之觀點而言，研磨終止膜(例如氮化矽膜)之研磨速度較佳為500 Å/分鐘以下，更佳為300 Å/分鐘以下，進而較佳為150 Å/分鐘以下。 於使用本發明之研磨液組合物之研磨步驟中，就研磨時間之縮短化之觀點而言，研磨速度比(被研磨膜之研磨速度/研磨終止膜之研磨速度)較佳為5.0以上，更佳為10.0以上，進而較佳為20.0以上，進而更佳為40.0以上。於本發明中，研磨選擇性係與被研磨膜之研磨速度相對於研磨終止之研磨速度之比(被研磨膜之研磨速度/研磨終止膜之研磨速度)同義，研磨選擇性較高意指研磨速度比會較大。 [研磨方法] 本發明係關於一種基板之研磨方法(以下，亦稱為本發明之研磨方法)，其包括使用本發明之研磨液組合物之研磨步驟。 藉由使用本發明之研磨方法，能夠確保研磨步驟中之研磨速度，並且提昇研磨選擇性及抑制研磨不均，故而可發揮能夠提昇基板品質提昇之半導體基板之生產性之效果。具體之研磨之方法及條件可與上述本發明之半導體基板之製造方法相同。 本發明進而關於以下之組合物、製造方法。 ＜1＞一種研磨液組合物，其含有氧化鈰粒子A、寡糖B及水，並且 上述寡糖B係包含3個以上且5個以下之葡萄糖進行鍵結而成之糖，且8個以上之葡萄糖進行鍵結而成之糖之含量為27質量%以下的寡糖。 ＜2＞如＜1＞記載之研磨液組合物，其中粒子A之平均一次粒徑較佳為5 nm以上，更佳為10 nm以上，進而較佳為20 nm以上。 ＜3＞如＜1＞或＜2＞記載之研磨液組合物，其中粒子A之平均一次粒徑較佳為300 nm以下，更佳為200 nm以下，進而較佳為150 nm以下。 ＜4＞如＜1＞至＜3＞中任一項記載之研磨液組合物，其中若將粒子A、寡糖B及水之合計含量設為100質量%，則研磨液組合物中之粒子A之含量較佳為0.05質量%以上，更佳為0.10質量%以上，進而較佳為0.20質量%以上。 ＜5＞如＜1＞至＜4＞中任一項記載之研磨液組合物，其中若將粒子A、寡糖B及水之合計含量設為100質量%，則研磨液組合物中之粒子A之含量較佳為10.0質量%以下，更佳為7.5質量%以下，進而較佳為5.0質量%以下，進而更佳為2.5質量%以下，進而更佳為1.0質量%以下。 ＜6＞如＜1＞至＜5＞中任一項記載之研磨液組合物，其中寡糖B之結構單元僅為葡萄糖。 ＜7＞如＜1＞至＜6＞中任一項記載之研磨液組合物，其中寡糖B係選自龍膽寡糖、異麥芽寡糖、麥芽寡糖及黑麯黴寡糖中之至少1種。 ＜8＞如＜1＞至＜7＞中任一項記載之研磨液組合物，其中寡糖B中之分子量15,000以上之糖之含量為0質量%以上。 ＜9＞如＜1＞至＜8＞中任一項記載之研磨液組合物，其中寡糖B中之分子量15,000以上之糖之含量較佳為10質量%以下，更佳為5質量%以下，進而較佳為4質量%以下。 ＜10＞如＜1＞至＜9＞中任一項記載之研磨液組合物，其中若將粒子A、寡糖B及水之合計含量設為100質量%，則寡糖B之含量較佳為0.2質量%以上，更佳為0.3質量%以上，進而較佳為0.4質量%以上，進而較佳為0.5質量%以上，進而較佳為0.8質量%以上。 ＜11＞如＜1＞至＜10＞中任一項記載之研磨液組合物，其中若將粒子A、寡糖B及水之合計含量設為100質量%，則寡糖B之含量較佳為2.5質量%以下，更佳為2.0質量%以下，進而較佳為1.5質量%以下，進而較佳為1.1質量%以下。 ＜12＞如＜1＞至＜11＞中任一項記載之研磨液組合物，其中寡糖B之含量較佳為0.1質量%以上且2.5質量%以下，更佳為0.3質量%以上且2.5質量%以下，進而較佳為0.4質量%以上且2.0質量%以下，進而較佳為0.5質量%以上且1.5質量%以下。 ＜13＞如＜1＞至＜12＞中任一項記載之研磨液組合物，其中若將粒子A、寡糖B及水之合計含量設為100質量%，則3個以上且5個以下之葡萄糖進行鍵結而成之糖之含量較佳為0.05質量%以上，更佳為0.08質量%以上，進而較佳為0.10質量%以上，進而較佳為0.12質量%以上，進而較佳為0.15質量%以上，進而較佳為0.25質量%以上，進而較佳為0.35質量%以上。 ＜14＞如＜1＞至＜13＞中任一項記載之研磨液組合物，其中3個以上且5個以下之葡萄糖進行鍵結而成之糖之含量較佳為1.0質量%以下，更佳為0.7質量%以下，進而較佳為0.5質量%以下。 ＜15＞如＜1＞至＜14＞中任一項記載之研磨液組合物，其中寡糖B之含量相對於粒子A之含量之比B/A較佳為0.01以上，更佳為0.1以上，進而較佳為0.3以上。 ＜16＞如＜1＞至＜15＞中任一項記載之研磨液組合物，其中寡糖B之含量相對於粒子A之含量之比B/A較佳為20以下，更佳為10以下，進而較佳為5以下。 ＜17＞如＜1＞至＜16＞中任一項記載之研磨液組合物，其中寡糖B之含量相對於粒子A之含量之比B/A為0.01以上且20以下。 ＜18＞如＜1＞至＜17＞中任一項記載之研磨液組合物，其中寡糖B之重量平均分子量較佳為未達800，更佳為750以下，進而較佳為700以下，進而較佳為600以下。 ＜19＞如＜1＞至＜18＞中任一項記載之研磨液組合物，其中寡糖B之重量平均分子量較佳為300以上，更佳為350以上，進而較佳為400以上。 ＜20＞如＜1＞至＜19＞中任一項記載之研磨液組合物，其進而含有具有陰離子性基之化合物C。 ＜21＞如＜20＞記載之研磨液組合物，其中化合物C之重量平均分子量較佳為1,000以上，更佳為10,000以上，進而較佳為20,000以上。 ＜22＞如＜20＞或＜21＞記載之研磨液組合物，其中化合物C之重量平均分子量較佳為550萬以下，更佳為100萬以下，進而較佳為10萬以下。 ＜23＞如＜20＞記載之研磨液組合物，其中化合物C為一元羧酸。 ＜24＞如＜23＞記載之研磨液組合物，其中化合物C係選自乙醯丙酸、丙酸、香草酸、對羥基苯甲酸及甲酸中之至少1種。 ＜25＞如＜20＞至＜24＞中任一項記載之研磨液組合物，其中研磨液組合物中之化合物C之含量較佳為0.001質量%以上，更佳為0.0015質量%以上，進而較佳為0.0025質量%以上。 ＜26＞如＜20＞至＜25＞中任一項記載之研磨液組合物，其中研磨液組合物中之化合物C之含量較佳為1.0質量%以下，更佳為0.8質量%以下，進而較佳為0.6質量%以下。 ＜27＞如＜20＞至＜26＞中任一項記載之研磨液組合物，其中研磨液組合物中之化合物C之含量相對於粒子A之含量的比(C/A)較佳為0.0001以上，更佳為0.0005以上，進而較佳為0.001以上。 ＜28＞如＜20＞至＜27＞中任一項記載之研磨液組合物，其中研磨液組合物中之化合物C之含量相對於粒子A之含量的比(C/A)較佳為1以下，更佳為0.1以下，進而較佳為0.01以下。 ＜29＞如＜1＞至＜28＞中任一項記載之研磨液組合物，其係用於氧化矽膜之研磨。 ＜30＞如＜1＞至＜29＞中任一項記載之研磨液組合物，其pH值較佳為4.0以上，更佳為5.0以上，進而較佳為6.0以上。 ＜31＞如＜1＞至＜30＞中任一項記載之研磨液組合物，其pH值較佳為9.0以下，更佳為未達9.0，進而較佳為8.5以下，進而較佳為8.0以下。 ＜32＞如＜1＞至＜31＞中任一項記載之研磨液組合物，其pH值為4.0以上且未達9.0。 ＜33＞如＜1＞至＜32＞中任一項記載之研磨液組合物，其包含粒子A混合於水中而成之第1溶液、及寡糖B混合於水中而成之第2溶液，且於使用時混合第1溶液與第2溶液。 ＜34＞一種半導體基板之製造方法，其包括使用如＜1＞至＜33＞中任一項記載之研磨液組合物研磨被研磨基板之步驟。 ＜35＞一種基板之研磨方法，其包括使用如＜1＞至＜33＞中任一項記載之研磨液組合物研磨被研磨基板之步驟，且上述被研磨基板係用於半導體基板之製造之基板。 ＜36＞一種如＜1＞至＜33＞中任一項記載之研磨液組合物之用途，其係用於半導體基板之製造。 [實施例] 1.研磨液組合物之製備(實施例1～23及比較例1～20) 以成為下述表1-1、表1-2及表2所示之含量之方式混合水、研磨粒(粒子A)及添加劑(寡糖B、化合物C)，獲得實施例1～23及比較例1～20之研磨液組合物。研磨液組合物之pH值係使用0.1 N銨水溶液進行調整。 作為粒子A，使用膠體二氧化鈰(「ZENUS HC90」，阿南化成公司製造，平均一次粒徑：99 nm，BET比表面積：8.4 m2
/g)、不定形二氧化鈰(焙燒粉碎二氧化鈰GPL-C1010，昭和電工製造，平均一次粒徑：70 nm，BET比表面積：11.8 m2
/g)、二氧化鈰包覆二氧化矽(平均一次粒徑：92.5 nm，BET比表面積：35.5 m2
/g)及氫氧化鈰(平均一次粒徑：5 nm，BET比表面積：165 m2
/g)。 作為化合物C，使用聚丙烯酸銨鹽(重量平均分子量：21,000)，檸檬酸、乙醯丙酸、丙酸、香草酸、對羥基苯甲酸及甲酸。 作為寡糖B(B1～B16)，使用以下者。主結構單元係指寡糖之結構單元中占聚合度2以上之單糖、即寡糖中之成為聚合度2以上之糖之結構單元的單糖。 B1：龍膽寡糖類(製品名：Gentose#45，日本食品化工製造，構成成分：單糖～五糖之直鏈寡糖，主結構單元：葡萄糖) B2：異麥芽寡糖類(製品名：Biotose#50，日本食品化工製造，構成成分：三糖～五糖之支鏈寡糖，主結構單元：葡萄糖) B3：異麥芽寡糖(製品名：Nisshoku Branch-Oligo，日本食品化工製造，構成成分：三糖～四糖之支鏈寡糖，主結構單元：葡萄糖) B4：麥芽寡糖類(製品名：Fujioligo#450，日本食品化工製造，構成成分：二糖～十糖之直鏈寡糖，主結構單元：葡萄糖) B5：黑麯黴寡糖(製品名：Tasteoligo，日本食品化工製造，構成成分：單糖～四糖之直鏈寡糖，主結構單元：葡萄糖) B6：葡萄糖(單糖) B7：半乳糖(單糖) B8：木糖醇(單糖、糖醇，無環狀結構) B9：D-甘露醇(單糖、糖醇，無環狀結構) B10：蔗糖(二糖之直鏈寡糖，結構單元：葡萄糖＋果糖) B11：海藻糖(二糖之直鏈寡糖，主結構單元：葡萄糖) B12：棉子糖(三糖之直鏈寡糖，結構單元：果糖＋半乳糖＋葡萄糖) B13：半乳寡糖(二～五糖之直鏈寡糖，主結構單元：半乳糖) B14：蔗糖硬脂酸酯(製品名：S-970，Mitsubishi-Chemical Foods製造，二糖之直鏈寡糖，結構單元：葡萄糖＋果糖) B15：α-環糊精(六糖之環狀寡糖，主結構單元：葡萄糖) B16：幾丁質寡糖(數個N-乙醯葡糖胺連接而成之寡糖) 研磨液組合物之pH值、粒子A之平均一次粒徑及BET比表面積係藉由以下之方法進行測定。將pH值之測定結果示於表1-1、表1-2及表2。 (a)研磨液組合物之pH值測定 研磨液組合物之25℃下之pH值係使用pH計(東亞電波工業股份有限公司，HM-30G)所測得之值，為將電極浸漬於研磨液組合物中後1分鐘後之數值。 (b)粒子A之平均一次粒徑 粒子A之平均一次粒徑(nm)係使用下述藉由BET(氮吸附)法而獲得之比表面積S(m2
/g)，將二氧化鈰粒子之真密度設為7.2 g/cm3
而算出。 (c)粒子A之BET比表面積之測定方法 將二氧化鈰粒子A分散液於120℃下熱風乾燥3小時後，藉由瑪瑙研缽粉碎為較細而獲得樣本。於即將測定之前於120℃之環境下乾燥15分鐘，然後使用比表面積測定裝置(Micromeritics自動比表面積測定裝置Flowsorb III2305，島津製作所製造)，藉由氮吸附法(BET法)測定比表面積S(m2
/g)。 關於寡糖B1～B16之構成成分，於下述條件下使用HPLC(High Performance Liquid Chromatograph，高效液相層析儀)進行分離，使用LC-MS(Liquid chromatography-mass spectrometry，液相層析-質譜法)進行分析。 ＜HPLC條件＞ ・管柱：Shodex Asahipak NH2P-50 ・溶離液：乙腈與水之混合溶液 ・流速：0.8 mL/min ・溫度：30℃ ・試樣濃度：0.1%(溶劑：乙腈與水之混合溶液) ・注入量：30 μL ・檢測：Q-Exactive(FT-MS) 2.研磨液組合物(實施例1～23及比較例1～20)之評價 [試片之製作] 自於矽晶圓單面藉由TEOS(Tetraethyl orthosilicate，原矽酸四乙酯)-電漿CVD法形成有厚度2000 nm之氧化矽膜者切割出40 mm×40 mm之正方形片，獲得氧化矽膜試片。 以相同之方式，自於矽晶圓之單面藉由CVD法形成有厚度300 nm之氮化矽膜者切割出40 mm×40 mm之正方形片，獲得氮化矽膜試片。 [氧化矽膜(被研磨膜)之研磨速度之測定] 作為研磨裝置，使用壓盤直徑300 mm之Musashino Denshi公司製造之「MA-300」。又，作為研磨墊，使用Nitta Haas公司製造之硬質胺基甲酸酯墊「IC-1000/Sub400」。於上述研磨裝置之壓盤貼附上述研磨墊。將上述試片安裝於支架(holder)，以試片之形成有氧化矽膜之面成為下方之方式(以氧化矽膜面向研磨墊之方式)將支架置於研磨墊。進而，以施加於試片之負載成為300 g重/cm2
之方式，將鉛垂置於支架。一面以50 mL/分鐘之速度將研磨液組合物滴下至貼附有研磨墊之壓盤之中心，一面使壓盤及支架之各者以90 r/分鐘向相同之旋轉方向旋轉1分鐘，進行氧化矽膜試片之研磨。研磨後，使用超純水進行清洗，並進行乾燥，將氧化矽膜試片作為下述光干渉式膜厚測定裝置之測定對象。 於研磨前及研磨後，使用光干渉式膜厚測定裝置(大日本網屏公司製造之「Lambda ACE VM-1000」)，測定氧化矽膜之膜厚。氧化矽膜之研磨速度係藉由下述式算出，並示於下述表1-1、表1-2及表2。 ・氧化矽膜之研磨速度(Å/分鐘) ＝[研磨前之氧化矽膜厚度(Å)－研磨後之氧化矽膜厚度(Å)]/研磨時間(分鐘) [氮化矽膜(研磨終止膜)之研磨速度之測定] 使用氮化矽膜試片作為試片以代替氧化矽膜試片，除此以外，以與上述[氧化矽膜之研磨速度之測定]相同之方式，進行氮化矽膜之研磨及膜厚之測定。氮化矽膜之研磨速度係藉由下述式算出，並示於下述表1-1、表1-2及表2。 ・氮化矽膜之研磨速度(Å/分鐘) ＝[研磨前之氮化矽膜厚度(Å)－研磨後之氮化矽膜厚度(Å)]/研磨時間(分鐘) [研磨速度比] 將氧化矽膜之研磨速度相對於氮化矽膜之研磨速度之比設為研磨速度比，藉由下述式算出，並示於下述表1-1、表1-2及表2。研磨速度比之值越大，則表示研磨選擇性越高。 ・研磨速度比＝氧化矽膜之研磨速度(Å/分鐘)/氮化矽膜之研磨速度(Å/分鐘) [研磨不均之評價方法] 為了測定研磨後之氮化矽膜試片上之不均之個數，使用下述評價方法。首先，使用NIKON製造之COOLPIXS3700，於下述條件下對氮化矽膜試片拍攝照片。 ・ISO感度：400 ・圖像模式：2 M(1600×1200) ・白平衡：螢光燈 ・AF(Auto Focus，自動對焦)區域選擇：中央 ・AF模式：AF-S單次AF ・AF輔助光：無 ・電子變焦：不進行 ・宏：ON 繼而，針對拍攝之照片，使用MITANI製造之圖像分析軟體WinROOF2013，於下述條件下測定研磨不均之個數。 將測定基準單位設定為1像素，將拍攝之照片進行單色圖像化，藉由修整，將晶圓內部之514pixed×514像素之正方形區域指定為分析區域(以下，稱為指定區域)。然後，使指定區域之內側(實際面積263952像素)之灰度256灰階反轉，為了使產生研磨不均之部分之識別容易而進行增強，將增強之部分利用軟體功能「藉由2個閾值之二值化」，自閾值80至184，以透明度127進行二值化。其後，測量二值區域之形狀特徵，測定色度不同之不均之部分作為研磨不均之個數。將測定結果示於表1-1、表1-2及表2。 [穩定性之評價] 測定將實施例15～23之研磨液組合物於60℃下靜置1個月時之pH值。將測定結果示於表2。於確保經過1個月後之研磨液組合物之研磨性能之情形時，可判斷為保存穩定性良好。 [表1-1]
[表1-2]
[表2]
如表1-1、表1-2及表2所示，含有特定之寡糖B之實施例1～23確保研磨速度，並且研磨選擇性提昇，進而，研磨不均得到抑制。關於包含聚丙烯酸銨或檸檬酸作為化合物C之實施例10～13，研磨選擇性進一步提昇。關於包含乙醯丙酸、丙酸、香草酸、對羥基苯甲酸或甲酸作為化合物C之實施例16～23，保存穩定性良好。 進而，將使用實施例1及比較例4之研磨液組合物進行研磨之氮化矽膜之表面的觀察圖像示於圖1及2。如圖1所示，於經實施例1之研磨液組合物研磨之氮化矽膜之表面，目測亦未確認到研磨不均。另一方面，如圖2所示，於經比較例4之研磨液組合物研磨之氮化矽膜之表面，目測亦確認到研磨不均。 [產業上之可利用性] 本發明之研磨液組合物可用於高密度化或高積體化用半導體基板之製造方法。The inventors of the present invention conducted diligent studies, and as a result, surprisingly found that the polishing liquid composition containing cerium oxide (hereinafter, also referred to as "cerium oxide") particles as abrasive grains contains specific oligosaccharides to ensure polishing. Speed, and improve the polishing selectivity and suppress uneven polishing, thus completing the present invention. That is, the present invention relates to a polishing liquid composition containing cerium oxide particles A, oligosaccharide B, and water, and the oligosaccharide B is a sugar formed by bonding 3 or more and 5 or less glucoses, and An oligosaccharide with a sugar content of less than 27% by mass formed by bonding 8 or more glucoses. According to the polishing liquid composition of the present invention, the polishing speed can be ensured, the polishing selectivity can be improved, and the polishing unevenness can be suppressed. Although the details of the mechanism by which the effects of the present invention are expressed are not clear, they are presumed as follows. It is believed that in polishing using a polishing liquid composition containing cerium oxide particles as abrasive grains, a polishing stop film such as a silicon nitride film is hydrolyzed by water molecules and becomes the same composition as a film to be polished such as a silicon oxide film. It is easy to polish with cerium oxide particles. In contrast to this, it is estimated that in polishing using the polishing liquid composition of the present invention, the specific oligosaccharide B is hydrated with water molecules to inhibit the hydrolysis of the polishing stop film such as silicon nitride film, and inhibit the formation of cerium oxide. Grind. Furthermore, it is speculated that the polishing liquid composition of the present invention, by containing the specific oligosaccharide B, has a higher polishing inhibition ability for polishing stop films such as silicon nitride films, and can suppress the generation of uneven polishing of polishing stop films such as silicon nitride films. . However, the present invention may not be limited to these mechanisms for interpretation. In the present invention, "polishing selectivity" is synonymous with the ratio of the polishing rate of the film to be polished to the polishing rate of the polishing stop film (polishing rate of the film to be polished/polishing rate of the polishing stop film), if "polishing selectivity""Higher means that the above-mentioned grinding speed ratio will be greater.""Oligosaccharides" are generally classified between monosaccharides and polysaccharides. It is a general term for sugars formed by glycosidic bonding of a small amount of monosaccharides. As the number (degree of polymerization) of monosaccharides constituting oligosaccharides, for example, about 2-20 can be cited. [Cerium Oxide (Ceria) Particles A] The polishing liquid composition of the present invention contains cerium oxide particles A (hereinafter, also simply referred to as "particles A") as abrasive particles. There are no particular limitations on the production method, shape, and surface state of the particles A. Examples of particles A include colloidal ceria, amorphous ceria, and ceria-coated silica. The colloidal cerium oxide can be obtained by a build-up process using the method described in Examples 1 to 4 of Japanese Patent Application Publication No. 2010-505735, for example. The amorphous cerium oxide can be obtained by baking and pulverizing a cerium compound such as cerium carbonate or cerium nitrate, for example. As the ceria-coated silica, for example, the method described in Examples 1 to 14 of Japanese Patent Laid-Open No. 2015-63451 or Examples 1 to 4 of Japanese Patent Laid-Open No. 2013-119131 can be mentioned. A composite particle of a structure formed by coating at least a part of the surface of the silica particle with granular ceria. The composite particle can be obtained, for example, by depositing ceria on the silica particle. From the viewpoint of increasing the polishing rate, colloidal ceria is preferred. From the viewpoint of reducing residues after grinding, it is preferable to coat silica with ceria. The particle A may be one type of ceria particles, or a combination of two or more types of ceria particles. From the viewpoint of increasing the polishing speed, the average primary particle size of the particles A is preferably 5 nm or more, more preferably 10 nm or more, and still more preferably 20 nm or more, and from the viewpoint of suppressing the occurrence of polishing damage, It is preferably 300 nm or less, more preferably 200 nm or less, and still more preferably 150 nm or less. In the present invention, the average primary particle size of the particles A is calculated using the BET specific surface area S (m 2 /g) calculated by the BET (nitrogen adsorption) method. The BET specific surface area can be measured by the method described in the examples. Examples of the shape of the particle A include a substantially spherical shape, a polyhedral shape, and a raspberry shape. If the total content of particle A, oligosaccharide B and water is 100% by mass, the content of particle A in the polishing liquid composition of the present invention is preferably 0.05% by mass or more, more preferably 0.10% by mass or more, still more preferably 0.20% by mass or more, and from the same viewpoint, preferably 10.0% by mass or less, more preferably 7.5% by mass or less, and still more preferably It is 5.0% by mass or less, more preferably 2.5% by mass or less, and still more preferably 1.0% by mass or less. When the particle A is a combination of two or more types of ceria particles, the content of the particle A refers to the total content of these. [Oligosaccharide B] The polishing liquid composition of the present invention contains oligosaccharide B. From the viewpoint of ensuring the grinding speed, improving the grinding selectivity and suppressing uneven grinding, the oligosaccharide B is preferably a sugar formed by bonding 3 or more and 5 or less glucose, and 8 or more glucose The content of the bonded sugar is 27% by mass or less, and it is a linear or branched oligosaccharide other than cyclic. The above-mentioned 3 or more and 5 or less glucose bonds are preferably glucoside bonds. The sugar formed by bonding the above 3 or more and 5 or less glucoses is preferably the active ingredient of the oligosaccharide B. As the monosaccharide constituting the oligosaccharide B in the present invention, that is, the structural unit of the oligosaccharide B, from the viewpoints of ensuring the grinding speed, improving the grinding selectivity, and suppressing uneven grinding, for example, it is preferable to use only glucose. Oligosaccharide B can be one type of oligosaccharide or a combination of two or more types of oligosaccharides. In the present invention, "the content of sugars formed by bonding more than 8 glucoses" refers to the ratio of sugars formed by bonding more than 8 glucoses in the oligosaccharide B. As the oligosaccharide B, from the viewpoints of ensuring the grinding speed, improving the grinding selectivity and suppressing uneven grinding, the content of the sugar with a molecular weight of 15,000 or more in the oligosaccharide B is preferably 0% by mass or more, and more preferably 10 Mass% or less, more preferably 5 mass% or less, and still more preferably 4 mass% or less. As the oligosaccharide B, in terms of ensuring the grinding speed, improving the grinding selectivity, and suppressing uneven grinding, it can be selected from the group consisting of gentio-oligosaccharide B1, isomalto-oligosaccharide B2, malto-oligosaccharide B3, and Aspergillus niger oligosaccharides. At least one of sugar B4. Among them, from the viewpoint of ensuring the grinding speed and improving the grinding selectivity, preferably one or more selected from the group consisting of gentio-oligosaccharide B1, isomalt-oligosaccharide B2 and Aspergillus niger oligosaccharide B4 The combination is more preferably at least one of gentio-oligosaccharide B1 and isomalt-oligosaccharide B2, and even more preferably is gentio-oligosaccharide B1. From the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the gentian oligosaccharide B1 in the present invention may include, for example, 3 or more and 5 or less glucoses which are mainly formed by β-1,6-glucosidic bonding. The linear-chain oligosaccharide as an active ingredient, specifically, those containing gentiotriose (trisaccharide), gentiotetraose (tetrasaccharide), etc., as an active ingredient. The gentio-oligosaccharide B1 can be produced, for example, by allowing β-glucosidase to act on glucose. In the gentio-oligosaccharide B1 or commercially available gentio-oligosaccharide B1 obtained by this manufacturing method, in addition to the above-mentioned effective ingredients, it also contains monosaccharide glucose or fructose, disaccharide gentiobiose, In the case of other ingredients such as sugars with a degree of polymerization of 6 or higher, these other ingredients can be included in the polishing liquid composition of the present invention within a range that does not significantly impair the effects of the present invention. Moreover, from the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the gentio-oligosaccharide B1 only needs to have a sugar content of 27% by mass or less by bonding 8 or more glucose. From the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the isomalto-oligosaccharide B2 in the present invention includes, for example, 3 or more and 5 or less glucose for α-1, 4 and/or α-1, 6-glucoside-bonded branched-chain oligosaccharides are used as an active ingredient. Specifically, examples include those containing isomaltose (triose), panose (triose), and the like as effective ingredients. Isomalt-oligosaccharide B2 can be produced, for example, by a production method including the following steps: acid treatment of glucan to selectively decompose bonds other than the α-1,6-glucosidic bond in the glucan molecule ; Make endoglucanase or endoglucanase immobilized on the carrier act on the acid-treated glucan solution to carry out an enzyme reaction. In the isomalto-oligosaccharide B2 or commercially available isomalto-oligosaccharide B2 obtained by this manufacturing method, in addition to the above-mentioned effective ingredients, it also contains isomaltose (disaccharide) and sugars with a degree of polymerization of 6 or higher. In the case of other ingredients, these other ingredients can be included in the polishing liquid composition of the present invention within a range that does not significantly impair the effect of the present invention. Moreover, from the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the content of sugars formed by bonding 8 or more glucoses of isomalto-oligosaccharide B2 may be 27% by mass or less. From the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the malto-oligosaccharide B3 in the present invention may include, for example, a straight line comprising 3 or more and 5 or less glucose through α-1,4 glucoside bonding. The chain oligosaccharide is used as an effective ingredient, and specifically, those containing maltotriose (triose), maltotetraose (tetraose), etc. as effective ingredients can be cited. Malto-oligosaccharide B3 can be produced by, for example, the action of malto-oligosaccharide-producing amylase on starch. In addition to the above-mentioned effective ingredients, the malto-oligosaccharide B3 or commercially available malto-oligosaccharide B3 obtained by this manufacturing method also contains other ingredients such as maltose (disaccharide) and sugars with a degree of polymerization of 6 or higher. In this case, these other ingredients can be included in the polishing liquid composition of the present invention within a range that does not significantly impair the effect of the present invention. Moreover, from the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the malto-oligosaccharide B3 only needs to have a sugar content of 27% by mass or less by bonding 8 or more glucose. From the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the Aspergillus niger oligosaccharide B4 in the present invention includes, for example, 3 or more and 5 or less glucose for α-1,3 and/or α-1,4 -Glucoside-bonded branched-chain oligosaccharides are used as effective ingredients. Specifically, they include Aspergillus niger triose (triose), Aspergillus niger glycosyl glucose (triose), and Aspergillus niger tetraose (tetraose). ), Aspergillus niger glycosylated maltose (tetrasaccharide), etc. as effective ingredients. Aspergillus niger oligosaccharide B4 can be produced, for example, by using a maltose solution as a substrate and using an Aspergillus niger oligosaccharide-producing enzyme to act. In addition to the above-mentioned effective ingredients, Aspergillus niger oligosaccharide B4 or commercially available Aspergillus niger oligosaccharide B4 obtained by this production method also contains Aspergillus niger disaccharide (disaccharide) and sugars with a degree of polymerization of 6 or higher. In the case of other ingredients, these other ingredients can be included in the polishing liquid composition of the present invention within a range that does not significantly impair the effect of the present invention. Moreover, from the viewpoint of ensuring the grinding speed and improving the grinding selectivity, the Aspergillus niger oligosaccharide B4 only needs to have a sugar content of 27% by mass or less by bonding 8 or more glucose. From the viewpoints of ensuring polishing speed, improving polishing selectivity, and suppressing uneven polishing, the weight average molecular weight of oligosaccharide B is preferably less than 800, more preferably 750 or less, further preferably 700 or less, and more preferably 600 or less, more preferably 300 or more, more preferably 350 or more, and still more preferably 400 or more. The weight average molecular weight of oligosaccharide B can be calculated by the same measuring method as the weight average molecular weight of compound C described below. If the total content of particles A, oligosaccharide B, and water is 100% by mass, from the viewpoint of suppressing uneven polishing and suppressing polishing of the polishing stop film, the oligosaccharide B in the polishing liquid composition of the present invention is The content is preferably 0.2% by mass or more, more preferably 0.3% by mass or more, still more preferably 0.4% by mass or more, still more preferably 0.5% by mass or more, still more preferably 0.8% by mass or more, and moreover, the grinding speed is ensured From the viewpoint of improving the polishing selectivity, it is preferably 2.5% by mass or less, more preferably 2.0% by mass or less, still more preferably 1.5% by mass or less, and still more preferably 1.1% by mass or less. From the same viewpoint, the content of the oligosaccharide B is preferably 0.1% by mass or more and 2.5% by mass or less, more preferably 0.3% by mass or more and 2.5% by mass or less, and still more preferably 0.4% by mass or more and 2.0% by mass % Or less, more preferably 0.5% by mass or more and 1.5% by mass or less. When oligosaccharide B is a combination of two or more oligosaccharides, the content of oligosaccharide B refers to the total content of these. If the total content of particle A, oligosaccharide B, and water is 100% by mass, from the viewpoint of suppressing uneven polishing and suppressing polishing of the polishing stop film, 3 or more of the polishing liquid composition of the present invention is The content of the sugar formed by bonding 5 or less glucose is preferably 0.05% by mass or more, more preferably 0.08% by mass or more, still more preferably 0.10% by mass or more, still more preferably 0.12% by mass or more, and more It is preferably 0.15% by mass or more, more preferably 0.25% by mass or more, still more preferably 0.35% by mass or more, and from the viewpoint of ensuring the polishing speed and improving the polishing selectivity, it is preferably 1.0% by mass or less, and more It is preferably 0.7% by mass or less, and more preferably 0.5% by mass or less. From the viewpoint of ensuring the polishing speed, improving the polishing selectivity and suppressing uneven polishing, the ratio B/A of the content of oligosaccharide B in the polishing liquid composition of the present invention to the content of particles A is preferably 0.01 or more. It is more preferably 0.1 or more, still more preferably 0.3 or more, more preferably 20 or less, more preferably 10 or less, and still more preferably 5 or less. [Compound C] From the viewpoint of ensuring polishing speed and improving polishing selectivity, the polishing liquid composition of the present invention preferably contains compound C having an anionic group (hereinafter, also referred to as "compound C") as a polishing aid Agent. Compound C may be one type or a combination of two or more types. As an anionic group of the compound C, a carboxylic acid group, a sulfonic acid group, a sulfate ester group, a phosphoric acid ester group, a phosphonic acid group, etc. are mentioned. These anionic groups can take the form of neutralized salts. As the counter ion when the anionic group adopts the form of a salt, metal ions, ammonium ions, alkyl ammonium ions, etc. can be cited. From the viewpoint of improving the quality of the semiconductor substrate, ammonium ions are preferred. As the compound C, for example, at least one selected from the group consisting of monocarboxylic acid, citric acid, and anionic polymer can be cited. As a specific example when compound C is an anionic polymer, at least one compound selected from the group consisting of polyacrylic acid, polymethacrylic acid, polystyrene sulfonic acid, (meth)acrylic acid, and monomethoxy can be cited. Polyethylene glycol mono(meth)acrylate copolymer, anionic copolymer (meth)acrylate and monomethoxypolyethylene glycol mono(meth)acrylate copolymer, (meth)acrylate Copolymers of alkyl acrylate, (meth)acrylic acid and monomethoxypolyethylene glycol mono(meth)acrylate, these alkali metal salts, and these ammonium salts, improve the quality of semiconductor substrates From a viewpoint, it is preferably at least one selected from polyacrylic acid and its ammonium salt. When the compound C is an anionic polymer, the weight average molecular weight of the compound C is preferably 1,000 or more, more preferably 10,000 or more, and even more preferably 20,000 or more from the viewpoint of ensuring the polishing speed and improving the polishing selectivity. And, it is preferably 5.5 million or less, more preferably 1 million or less, and still more preferably 100,000 or less. In the present invention, the weight average molecular weight can be obtained by using a liquid chromatograph (made by Hitachi, Ltd., L-6000 high performance liquid chromatograph) by gel permeation chromatography (GPC) under the following conditions Measure under. Detector: Shodex RI SE-61 Differential Refractive Index Detector. Column: Use a series connection of G4000PWXL and G2500PWXL manufactured by Tosoh Corporation. Eluent: Use 0.2 M phosphate buffer/acetonitrile = 90/10 (volume ratio) to adjust the concentration to 0.5 g/100 mL, and use 20 μL. Column temperature: 40°C Flow rate: 1.0 mL/min Standard polymer: Monodisperse polyethylene glycol with known molecular weight. When compound C is a monocarboxylic acid, as compound C, for example, acetyl propionic acid, At least one of propionic acid, vanillic acid, p-hydroxybenzoic acid and formic acid. It is considered that when the polishing liquid composition of the present invention contains a monocarboxylic acid as the compound C, the storage stability becomes good. From the viewpoint of ensuring polishing speed and improving polishing selectivity, the content of compound C in the polishing liquid composition of the present invention is preferably 0.001% by mass or more, more preferably 0.0015% by mass or more, and still more preferably 0.0025% by mass Above, and more preferably 1.0% by mass or less, more preferably 0.8% by mass or less, and still more preferably 0.6% by mass or less. When the compound C is a combination of two or more kinds, the content of the compound C refers to the total content of these. From the viewpoint of ensuring polishing speed and improving polishing selectivity, the ratio (C/A) of the content of compound C to the content of particle A in the polishing liquid composition of the present invention is preferably 0.0001 or more, more preferably 0.0005 Above, more preferably 0.001 or more, more preferably 1 or less, more preferably 0.1 or less, and still more preferably 0.01 or less. [Water] The polishing liquid composition of the present invention contains water as a medium. From the viewpoint of improving the quality of the semiconductor substrate, the water preferably includes water such as ion exchange water, distilled water, and ultrapure water. Regarding the content of water in the polishing liquid composition of the present invention, if the total content of particle A, oligosaccharide B, water, optionally added compound C and the following optional components is set to 100% by mass, it can be divided into The remaining amount except particle A, oligosaccharide B, compound C and optional ingredients. [Optional Ingredients] The polishing liquid composition of the present invention may contain pH adjusters, surfactants other than compound C, thickeners, dispersants, rust inhibitors, alkaline substances, and Optional ingredients such as polishing speed enhancer. From the viewpoint of ensuring the polishing speed, the content of these optional components is preferably 0.001% by mass or more, more preferably 0.0025% by mass or more, and still more preferably 0.01% by mass or more. From the viewpoint of improving the polishing selectivity, It is preferably 1% by mass or less, more preferably 0.5% by mass or less, and still more preferably 0.1% by mass or less. As said pH adjuster, an acidic compound and a basic compound are mentioned, for example. Examples of acidic compounds include inorganic acids such as hydrochloric acid, nitric acid, and sulfuric acid; organic acids such as acetic acid, oxalic acid, citric acid, and malic acid. Among them, from the viewpoint of versatility, at least one selected from hydrochloric acid, nitric acid, and acetic acid is preferred, and at least one selected from hydrochloric acid and acetic acid is more preferred. Examples of basic compounds include inorganic basic compounds such as ammonia and potassium hydroxide; organic basic compounds such as alkylamines and alkanolamines, and the like. Among them, from the viewpoint of improving the quality of the semiconductor substrate, at least one selected from ammonia and alkylamine is preferred, and ammonia is more preferred. Examples of surfactants other than the above-mentioned compound C include anionic surfactants and nonionic detergents other than component C, and the like. As an anionic surfactant, an alkyl ether acetate, an alkyl ether phosphate, an alkyl ether sulfate, etc. are mentioned, for example. Examples of nonionic surfactants include nonionic polymers such as polypropylene amides, polyoxyalkylene alkyl ethers, polyoxyethylene stilbene phenyl ethers, and the like. In one or more embodiments, the polishing liquid composition of the present invention may not substantially contain a nonionic surfactant. In the present invention, "substantially not containing a nonionic surfactant" means that the content of the nonionic surfactant in the polishing liquid composition is 0.1% by mass or less. From the viewpoint of ensuring the polishing speed of the silicon oxide film and improving the polishing selectivity, the content of the nonionic surfactant in the polishing liquid composition of the present invention is preferably less than 0.01% by mass, and more preferably 0.005% by mass % Or less, and more preferably substantially 0% by mass. The polishing liquid composition of the present invention may or may not include a compound having 4 or more amine groups in one or more embodiments. [Polishing liquid composition] The polishing liquid composition of the present invention can be manufactured by a manufacturing method including the following steps: using a known method to prepare a slurry containing particles A and water, oligosaccharide B, and optionally compound C and Optional ingredients, etc. For example, the polishing liquid composition of the present invention can be obtained by blending at least particle A, oligosaccharide B, and water. In the present invention, "preparation" includes the operation of simultaneously or sequentially mixing particle A, oligosaccharide B and water, as well as compound C and other optional components as needed. The order of mixing is not particularly limited. The above-mentioned preparation can be performed using a mixer such as a homomixer, a homogenizer, an ultrasonic dispersion machine, and a wet ball mill, for example. The blending amount of each component in the manufacturing method of the polishing liquid composition of the present invention may be the same as the content of each component in the above-mentioned polishing liquid composition of the present invention. The embodiment of the polishing liquid composition of the present invention may be a so-called one-component type that is supplied to the market in a state where all the components are mixed in advance, or a so-called two-component type that is mixed at the time of use. In a two-component polishing liquid composition, it is divided into a first solution and a second solution. The polishing liquid composition may be, for example, a first solution containing particles A mixed in water, and oligosaccharide B mixed in water. The second solution, and mix the first solution and the second solution. The mixing of the first solution and the second solution may be performed before being supplied to the surface of the polishing object, or they may be supplied separately and mixed on the surface of the substrate to be polished. From the viewpoint of ensuring polishing speed and improving polishing selectivity, the pH of the polishing liquid composition of the present invention is preferably 4.0 or higher, more preferably 5.0 or higher, still more preferably 6.0 or higher, and more preferably 9.0 or lower , More preferably less than 9.0, still more preferably 8.5 or less, and still more preferably 8.0 or less. In the present invention, the pH value of the polishing liquid composition is a value at 25° C., which is a value measured with a pH meter. Specifically, the pH value of the polishing liquid composition of the present invention can be measured by the method described in the examples. In the present invention, the "content of each component in the polishing liquid composition" refers to the content of each of the above-mentioned components when the polishing liquid composition is used for polishing. The polishing liquid composition of the present invention can be stored and supplied in a concentrated state within a range that does not impair its stability. In this case, it is better in terms of lower manufacturing/transporting costs. In addition, the concentrated liquid may be appropriately diluted with the above-mentioned aqueous medium and used in the polishing step as necessary. The dilution ratio is preferably 5 to 100 times. [Film to be Polished] As the film to be polished to be polished by the polishing liquid composition of the present invention, for example, a silicon oxide film can be cited. Therefore, the polishing liquid composition of the present invention can be preferably used for polishing the silicon oxide film in the step of forming the device separation structure of the semiconductor substrate. [Polishing liquid set] The present invention relates to a polishing liquid set, which is used to manufacture a polishing liquid composition, and includes: a particle A dispersion liquid, which contains the above-mentioned particle A dispersion liquid in a container and成; and the above-mentioned oligosaccharide B, which is contained in a container different from the above-mentioned particle A dispersion. According to the polishing liquid set of the present invention, it is possible to provide a polishing liquid set that can obtain a polishing liquid composition that can ensure a polishing speed, improve polishing selectivity, and suppress uneven polishing. As the polishing liquid set of the present invention, for example, it can be stored in a state where the dispersion containing the particles A (first solution) and the solution containing oligosaccharide B (second solution) are not mixed with each other, and mixed during use. These polishing liquid sets (2-component polishing liquid composition). After mixing the above-mentioned first solution and the above-mentioned second solution, it can be diluted with water as needed. The second solution may contain other ingredients that can be formulated in the polishing liquid composition used in the polishing of the object to be polished. Examples of other components that can be formulated in the polishing liquid composition include the above-mentioned compound C, acid, oxidizing agent, heterocyclic aromatic compound, aliphatic amine compound, and alicyclic amine compound. In the above-mentioned first solution and second solution, optional components may be included as needed. As this optional component, for example, a thickener, a dispersant, a rust inhibitor, an alkaline substance, a polishing rate improver, a surfactant, a polymer compound, etc. may be mentioned. [Method for manufacturing semiconductor substrate] The present invention relates to a method for manufacturing a semiconductor substrate (hereinafter, also referred to as "the method for manufacturing a semiconductor substrate of the present invention"), which includes polishing a film to be polished using the polishing liquid composition of the present invention Step (hereinafter, also referred to as "polishing step using the polishing liquid composition of the present invention"). According to the semiconductor substrate manufacturing method of the present invention, the polishing speed in the polishing step can be ensured, the polishing selectivity can be improved, and the polishing unevenness can be suppressed, so the effect of efficiently manufacturing semiconductor substrates with improved substrate quality can be exerted. As a specific example of the manufacturing method of the semiconductor substrate of the present invention, first, a silicon dioxide layer is deposited on the surface of the silicon dioxide layer by exposing the silicon substrate to oxygen in an oxidation furnace, and then, on the silicon dioxide layer by, for example, The CVD method (chemical vapor deposition method, chemical vapor deposition method) forms a polishing stop film such as a silicon nitride (Si 3 N 4 ) film or a polysilicon film. Next, on a substrate including a silicon substrate and a polishing stop film arranged on one of the main surfaces of the silicon substrate, for example, a substrate with a polishing stop film formed on the silicon dioxide layer of the silicon substrate, a groove is formed using photolithography technology. groove. Then, for example, a silicon oxide (SiO 2 ) film is formed as a polished film for groove embedding by a CVD method using silane gas and oxygen to obtain a polished stop film covered by the polished film (silicon oxide film). Substrate. By forming a silicon oxide film, the trench is filled with silicon oxide of the silicon oxide film, and the surface opposite to the silicon substrate side of the polishing stop film is covered with the silicon oxide film. The surface opposite to the silicon substrate side surface of the silicon oxide film formed in this way has a step formed corresponding to the convex and concave of the lower layer. Then, by the CMP method, the silicon oxide film is polished until at least the surface opposite to the silicon substrate side of the polishing stop film is exposed. More preferably, the silicon oxide film is polished until the surface of the silicon oxide film and the polishing stop film become the same plane. The polishing liquid composition of the present invention can be used in the step of polishing by the CMP method. In polishing by the CMP method, in a state where the surface of the substrate to be polished is in contact with the polishing pad, the polishing liquid composition of the present invention is supplied to the contact parts, and the substrate to be polished and the polishing pad are moved relatively , Thereby flattening the unevenness of the surface of the substrate to be polished. In the manufacturing method of the semiconductor substrate of the present invention, other insulating films can be formed between the silicon dioxide layer of the silicon substrate and the polishing stop film, or between the polishing film (such as silicon oxide film) and polishing stop film (such as nitrogen). Another insulating film is formed between the silicon film). In the polishing step using the polishing liquid composition of the present invention, the rotation speed of the polishing pad can be set to, for example, 30 to 200 r/min, and the rotation speed of the substrate to be polished can be set to, for example, 30 to 200 r/min. The polishing load of the polishing device of the polishing pad can be set to, for example, 20 to 500 g weight/cm 2 , and the supply rate of the polishing liquid composition can be set to, for example, 10 to 500 mL/min or less. When the polishing liquid composition is a two-part polishing liquid composition, by adjusting the supply rate (or supply amount) of each of the first solution and the second solution, each of the film to be polished and the polishing stop film can be adjusted. The polishing rate or the polishing rate ratio between the film to be polished and the polishing stop film (polishing selectivity). In the polishing step using the polishing liquid composition of the present invention, from the viewpoint of improving productivity, the polishing speed of the film to be polished (such as a silicon oxide film) is preferably 2000 Å/min or more, more preferably 3000 Å/min. Minutes or more, and more preferably 4000 Å/min or more. In the polishing step using the polishing liquid composition of the present invention, from the viewpoint of improving polishing selectivity and shortening polishing time, the polishing speed of the polishing stop film (such as silicon nitride film) is preferably 500 Å/min or less, It is more preferably 300 Å/min or less, and still more preferably 150 Å/min or less. In the polishing step using the polishing liquid composition of the present invention, from the viewpoint of shortening the polishing time, the polishing rate ratio (polishing rate of the film to be polished/polishing rate of the polishing stop film) is preferably 5.0 or more, more It is preferably 10.0 or more, more preferably 20.0 or more, and still more preferably 40.0 or more. In the present invention, the polishing selectivity is synonymous with the ratio of the polishing rate of the film to be polished to the polishing rate at the end of polishing (the polishing rate of the film to be polished/the polishing rate of the polishing end film). Higher polishing selectivity means polishing The speed ratio will be larger. [Lapping Method] The present invention relates to a method for polishing a substrate (hereinafter, also referred to as the polishing method of the present invention), which includes a polishing step using the polishing liquid composition of the present invention. By using the polishing method of the present invention, the polishing speed in the polishing step can be ensured, and the polishing selectivity can be improved and the polishing unevenness can be suppressed. Therefore, the effect of improving the productivity of the semiconductor substrate with improved substrate quality can be exerted. The specific polishing method and conditions can be the same as the above-mentioned manufacturing method of the semiconductor substrate of the present invention. The present invention further relates to the following composition and production method. <1> A polishing liquid composition containing cerium oxide particles A, oligosaccharide B, and water, and the oligosaccharide B is a sugar formed by bonding 3 or more and 5 or less glucose, and 8 or more The content of sugars formed by the bonding of glucose is oligosaccharides of 27% by mass or less. <2> The polishing liquid composition as described in <1>, wherein the average primary particle size of the particles A is preferably 5 nm or more, more preferably 10 nm or more, and still more preferably 20 nm or more. <3> The polishing liquid composition as described in <1> or <2>, wherein the average primary particle size of the particles A is preferably 300 nm or less, more preferably 200 nm or less, and still more preferably 150 nm or less. <4> The polishing liquid composition as described in any one of <1> to <3>, wherein if the total content of particle A, oligosaccharide B and water is set to 100% by mass, the particles in the polishing liquid composition The content of A is preferably 0.05% by mass or more, more preferably 0.10% by mass or more, and still more preferably 0.20% by mass or more. <5> The polishing liquid composition as described in any one of <1> to <4>, wherein if the total content of particle A, oligosaccharide B and water is 100% by mass, the particles in the polishing liquid composition The content of A is preferably 10.0% by mass or less, more preferably 7.5% by mass or less, still more preferably 5.0% by mass or less, still more preferably 2.5% by mass or less, and still more preferably 1.0% by mass or less. <6> The polishing liquid composition according to any one of <1> to <5>, wherein the structural unit of oligosaccharide B is only glucose. <7> The polishing liquid composition according to any one of <1> to <6>, wherein the oligosaccharide B is selected from the group consisting of gentio-oligosaccharides, isomalt-oligosaccharides, malto-oligosaccharides and Aspergillus niger oligosaccharides At least one of them. <8> The polishing liquid composition according to any one of <1> to <7>, wherein the content of sugars with a molecular weight of 15,000 or more in the oligosaccharide B is 0% by mass or more. <9> The polishing liquid composition as described in any one of <1> to <8>, wherein the content of the sugar with a molecular weight of 15,000 or more in the oligosaccharide B is preferably 10% by mass or less, more preferably 5% by mass or less , And more preferably 4% by mass or less. <10> The polishing liquid composition as described in any one of <1> to <9>, wherein if the total content of particle A, oligosaccharide B and water is set to 100% by mass, the content of oligosaccharide B is preferable It is 0.2% by mass or more, more preferably 0.3% by mass or more, still more preferably 0.4% by mass or more, still more preferably 0.5% by mass or more, and still more preferably 0.8% by mass or more. <11> The polishing liquid composition as described in any one of <1> to <10>, wherein if the total content of particle A, oligosaccharide B, and water is 100% by mass, the content of oligosaccharide B is preferable It is 2.5% by mass or less, more preferably 2.0% by mass or less, still more preferably 1.5% by mass or less, and still more preferably 1.1% by mass or less. <12> The polishing liquid composition according to any one of <1> to <11>, wherein the content of oligosaccharide B is preferably 0.1% by mass or more and 2.5% by mass or less, more preferably 0.3% by mass or more and 2.5 % By mass or less, more preferably 0.4% by mass or more and 2.0% by mass or less, and still more preferably 0.5% by mass or more and 1.5% by mass or less. <13> The polishing liquid composition as described in any one of <1> to <12>, wherein if the total content of particle A, oligosaccharide B, and water is 100% by mass, 3 or more and 5 or less The content of sugar formed by bonding glucose is preferably 0.05% by mass or more, more preferably 0.08% by mass or more, still more preferably 0.10% by mass or more, still more preferably 0.12% by mass or more, and still more preferably 0.15 Mass% or more, more preferably 0.25% by mass or more, and still more preferably 0.35% by mass or more. <14> The polishing liquid composition as described in any one of <1> to <13>, wherein the content of sugar formed by bonding 3 or more and 5 or less glucose is preferably 1.0% by mass or less, and more It is preferably 0.7% by mass or less, and more preferably 0.5% by mass or less. <15> The polishing liquid composition according to any one of <1> to <14>, wherein the ratio B/A of the content of oligosaccharide B to the content of particle A is preferably 0.01 or more, more preferably 0.1 or more , And more preferably 0.3 or more. <16> The polishing liquid composition according to any one of <1> to <15>, wherein the ratio B/A of the content of oligosaccharide B to the content of particle A is preferably 20 or less, more preferably 10 or less , And more preferably 5 or less. <17> The polishing liquid composition according to any one of <1> to <16>, wherein the ratio B/A of the content of the oligosaccharide B to the content of the particle A is 0.01 or more and 20 or less. <18> The polishing liquid composition according to any one of <1> to <17>, wherein the weight average molecular weight of the oligosaccharide B is preferably less than 800, more preferably 750 or less, and still more preferably 700 or less, More preferably, it is 600 or less. <19> The polishing liquid composition according to any one of <1> to <18>, wherein the weight average molecular weight of the oligosaccharide B is preferably 300 or more, more preferably 350 or more, and still more preferably 400 or more. <20> The polishing liquid composition as described in any one of <1> to <19>, which further contains a compound C having an anionic group. <21> The polishing liquid composition as described in <20>, wherein the weight average molecular weight of the compound C is preferably 1,000 or more, more preferably 10,000 or more, and still more preferably 20,000 or more. <22> The polishing liquid composition as described in <20> or <21>, wherein the weight average molecular weight of compound C is preferably 5.5 million or less, more preferably 1 million or less, and still more preferably 100,000 or less. <23> The polishing liquid composition as described in <20>, wherein the compound C is a monocarboxylic acid. <24> The polishing liquid composition as described in <23>, wherein the compound C is at least one selected from the group consisting of acetylpropionic acid, propionic acid, vanillic acid, p-hydroxybenzoic acid, and formic acid. <25> The polishing liquid composition as described in any one of <20> to <24>, wherein the content of the compound C in the polishing liquid composition is preferably 0.001% by mass or more, more preferably 0.0015% by mass or more, and further Preferably it is 0.0025 mass% or more. <26> The polishing liquid composition as described in any one of <20> to <25>, wherein the content of the compound C in the polishing liquid composition is preferably 1.0% by mass or less, more preferably 0.8% by mass or less, and further Preferably it is 0.6 mass% or less. <27> The polishing liquid composition as described in any one of <20> to <26>, wherein the ratio (C/A) of the content of the compound C in the polishing liquid composition to the content of the particles A is preferably 0.0001 Above, it is more preferably 0.0005 or more, and still more preferably 0.001 or more. <28> The polishing liquid composition according to any one of <20> to <27>, wherein the ratio (C/A) of the content of the compound C in the polishing liquid composition to the content of the particles A is preferably 1 Hereinafter, it is more preferably 0.1 or less, and still more preferably 0.01 or less. <29> The polishing liquid composition as described in any one of <1> to <28>, which is used for polishing a silicon oxide film. <30> The polishing liquid composition as described in any one of <1> to <29> has a pH value of preferably 4.0 or higher, more preferably 5.0 or higher, and still more preferably 6.0 or higher. <31> The polishing liquid composition as described in any one of <1> to <30>, preferably has a pH value of 9.0 or less, more preferably less than 9.0, still more preferably 8.5 or less, and still more preferably 8.0 the following. <32> The polishing liquid composition as described in any one of <1> to <31>, which has a pH of 4.0 or more and less than 9.0. <33> The polishing liquid composition as described in any one of <1> to <32>, comprising a first solution in which particles A are mixed in water, and a second solution in which oligosaccharides B are mixed in water, And mix the first solution and the second solution during use. <34> A method for manufacturing a semiconductor substrate, which includes the step of polishing a substrate to be polished using the polishing liquid composition described in any one of <1> to <33>. <35> A method for polishing a substrate, which includes the step of polishing a substrate to be polished with the polishing liquid composition described in any one of <1> to <33>, and the substrate to be polished is used in the manufacture of a semiconductor substrate Substrate. <36> A use of the polishing liquid composition as described in any one of <1> to <33>, which is used in the manufacture of semiconductor substrates. [Example] 1. Preparation of polishing liquid composition (Examples 1 to 23 and Comparative Examples 1 to 20) Water, Abrasive grains (particle A) and additives (oligosaccharide B, compound C) were used to obtain polishing liquid compositions of Examples 1 to 23 and Comparative Examples 1 to 20. The pH value of the polishing liquid composition was adjusted using a 0.1 N ammonium aqueous solution. As particle A, colloidal cerium dioxide ("ZENUS HC90", manufactured by Anan Kasei Co., Ltd., average primary particle size: 99 nm, BET specific surface area: 8.4 m 2 /g), and amorphous cerium oxide (calcined and crushed cerium oxide GPL-C1010, manufactured by Showa Denko, average primary particle size: 70 nm, BET specific surface area: 11.8 m 2 /g), ceria-coated silica (average primary particle size: 92.5 nm, BET specific surface area: 35.5 m) 2 /g) and cerium hydroxide (average primary particle size: 5 nm, BET specific surface area: 165 m 2 /g). As the compound C, ammonium polyacrylate (weight average molecular weight: 21,000), citric acid, acetylpropionic acid, propionic acid, vanillic acid, p-hydroxybenzoic acid, and formic acid were used. As the oligosaccharide B (B1 to B16), the following were used. The main structural unit refers to a monosaccharide with a degree of polymerization of 2 or more among the structural units of an oligosaccharide, that is, a monosaccharide that becomes a structural unit of a sugar with a degree of polymerization of 2 or more among the oligosaccharides. B1: Gentian oligosaccharides (product name: Gentose#45, manufactured by Japan Food and Chemical Industry, composition: monosaccharide to pentasaccharide linear oligosaccharide, main structural unit: glucose) B2: isomalto oligosaccharides (product name: Biotose#50, manufactured by Japan Food and Chemical Industry, constituents: branched oligosaccharides from trisaccharide to pentasaccharide, main structural unit: glucose) B3: Isomalto-oligosaccharide (product name: Nisshoku Branch-Oligo, manufactured by Japan Food and Chemical Industry, Constituents: branched chain oligosaccharides of trisaccharides to tetrasaccharides, main structural unit: glucose) B4: Malto-oligosaccharides (product name: Fujioligo#450, manufactured by Japan Food and Chemical Industry, constituents: straight chain of disaccharides to decasaccharides Oligosaccharide, main structural unit: glucose) B5: Aspergillus niger oligosaccharide (product name: Tasteoligo, manufactured by Japan Food and Chemical Industry, composition: monosaccharide to tetrasaccharide linear oligosaccharide, main structural unit: glucose) B6: glucose ( Monosaccharide) B7: Galactose (monosaccharide) B8: Xylitol (monosaccharide, sugar alcohol, no cyclic structure) B9: D-mannitol (monosaccharide, sugar alcohol, no cyclic structure) B10: Sucrose ( Disaccharide linear oligosaccharide, structural unit: glucose + fructose) B11: Trehalose (disaccharide linear oligosaccharide, main structural unit: glucose) B12: Raffinose (trisaccharide linear oligosaccharide, structural unit : Fructose + Galactose + Glucose) B13: Galacto-oligosaccharide (straight-chain oligosaccharide of di-pentasaccharide, main structural unit: galactose) B14: Sucrose stearate (product name: S-970, Mitsubishi-Chemical Manufactured by Foods, disaccharide linear oligosaccharide, structural unit: glucose + fructose) B15: α-cyclodextrin (hexasaccharide cyclic oligosaccharide, main structural unit: glucose) B16: chitin oligosaccharide (several N-Acetyl-glucosamine linked oligosaccharides) The pH value of the polishing liquid composition, the average primary particle size of particle A and the BET specific surface area are measured by the following methods. The pH measurement results are shown in Table 1-1, Table 1-2 and Table 2. (a) Measurement of the pH value of the polishing liquid composition The pH value of the polishing liquid composition at 25°C is measured using a pH meter (Toa Denpa Industrial Co., Ltd., HM-30G), which is to immerse the electrode in the polishing The value after 1 minute in the liquid composition. (b) The average primary particle size of particle A The average primary particle size (nm) of particle A is the specific surface area S (m 2 /g) obtained by the BET (nitrogen adsorption) method as follows. The true density is calculated as 7.2 g/cm 3. (c) Method for measuring the BET specific surface area of particle A. After the cerium oxide particle A dispersion was dried with hot air at 120°C for 3 hours, it was pulverized with an agate mortar to obtain a sample. Immediately before the measurement, it was dried at 120°C for 15 minutes, and then the specific surface area S (m 2 /g). Regarding the constituent components of oligosaccharides B1 to B16, they were separated using HPLC (High Performance Liquid Chromatograph) under the following conditions, using LC-MS (Liquid chromatography-mass spectrometry, liquid chromatography-mass spectrometry) Method) for analysis. <HPLC conditions> ・Column: Shodex Asahipak NH2P-50 ・Lluent: a mixed solution of acetonitrile and water ・Flow rate: 0.8 mL/min ・Temperature: 30℃ ・Sample concentration: 0.1% (Solvent: a mixture of acetonitrile and water Solution) ・Injection volume: 30 μL ・Detection: Q-Exactive (FT-MS) 2. Evaluation of polishing liquid composition (Examples 1-23 and Comparative Examples 1-20) [Production of test piece] From silicon crystal A silicon oxide film with a thickness of 2000 nm was formed by TEOS (Tetraethyl orthosilicate)-plasma CVD method on one side of the circle to cut a 40 mm×40 mm square piece to obtain a silicon oxide film test piece. In the same way, a 40 mm×40 mm square piece was cut from a silicon nitride film with a thickness of 300 nm formed on one side of the silicon wafer by the CVD method to obtain a silicon nitride film test piece. [Measurement of the polishing rate of silicon oxide film (film to be polished)] As a polishing device, "MA-300" manufactured by Musashino Denshi with a platen diameter of 300 mm was used. In addition, as the polishing pad, a rigid urethane pad "IC-1000/Sub400" manufactured by Nitta Haas was used. The above-mentioned polishing pad is attached to the pressure plate of the above-mentioned polishing device. The test piece is mounted on a holder, and the holder is placed on the polishing pad so that the surface of the test piece on which the silicon oxide film is formed becomes the lower side (the silicon oxide film faces the polishing pad). Furthermore, the support was placed vertically on the holder so that the load applied to the test piece became 300 g weight/cm 2. While dropping the polishing liquid composition at a speed of 50 mL/min to the center of the pressure plate attached with the polishing pad, while rotating each of the pressure plate and the holder in the same direction of rotation at 90 r/min for 1 minute, proceed Grinding of silicon oxide film test piece. After polishing, it was washed with ultrapure water and dried, and the silicon oxide film test piece was used as the measurement object of the light-interference film thickness measuring device described below. Before polishing and after polishing, the thickness of the silicon oxide film was measured using a light drying film thickness measuring device (“Lambda ACE VM-1000” manufactured by Dainippon Screen Co., Ltd.). The polishing rate of the silicon oxide film is calculated by the following formula, and is shown in Table 1-1, Table 1-2, and Table 2 below.・Silicon oxide film polishing speed (Å/min) = [silicon oxide film thickness before polishing (Å)-silicon oxide film thickness after polishing (Å)] / polishing time (min) [silicon nitride film (polishing end) The measurement of the polishing rate of the film] The silicon nitride film test piece is used as the test piece instead of the silicon oxide film test piece. Except for this, the nitriding is performed in the same way as the above-mentioned [Measurement of the polishing rate of silicon oxide film] Polishing of silicon film and measurement of film thickness. The polishing rate of the silicon nitride film is calculated by the following formula, and is shown in Table 1-1, Table 1-2, and Table 2 below.・Silicon nitride film polishing speed (Å/min) = [silicon nitride film thickness before polishing (Å)-silicon nitride film thickness after polishing (Å)]/polishing time (min) [polishing speed ratio] The ratio of the polishing rate of the silicon oxide film to the polishing rate of the silicon nitride film is defined as the polishing rate ratio, which is calculated by the following formula, and is shown in Table 1-1, Table 1-2, and Table 2 below. The greater the value of the grinding speed ratio, the higher the grinding selectivity.・Polishing speed ratio = Polishing speed of silicon oxide film (Å/min) / Polishing speed of silicon nitride film (Å/min) [Evaluation method of uneven polishing] In order to determine the difference on the silicon nitride film after polishing For the average number, the following evaluation method was used. First, use the COOLPIXS3700 manufactured by NIKON to take photos of the silicon nitride film test piece under the following conditions.・ISO sensitivity: 400 ・Image mode: 2 M(1600×1200) ・White balance: Fluorescent light ・AF (Auto Focus) area selection: Center ・AF mode: AF-S single AF ・AF assist Light: None ・Electronic zoom: Not performed ・Macro: ON Then, for the captured photos, use the image analysis software WinROOF2013 manufactured by MITANI to measure the number of uneven grinding under the following conditions. The measurement standard unit is set to 1 pixel, the photographs taken are converted into monochrome images, and the 514 pixed × 514 pixels square area inside the wafer is designated as the analysis area (hereinafter referred to as the designated area) by trimming. Then, the inner side of the designated area (the actual area is 263952 pixels) is inverted with 256 gray scales. In order to facilitate the identification of the uneven grinding part, it is enhanced. The enhanced part is used by the software function "by 2 thresholds""Binarization", from a threshold of 80 to 184, with a transparency of 127 for binarization. After that, the shape characteristics of the binary area were measured, and the uneven part with different chromaticity was determined as the number of uneven polishing. The measurement results are shown in Table 1-1, Table 1-2, and Table 2. [Evaluation of stability] The pH of the polishing liquid compositions of Examples 15 to 23 was measured when they were allowed to stand at 60°C for 1 month. The measurement results are shown in Table 2. When the polishing performance of the polishing liquid composition after 1 month is ensured, it can be judged that the storage stability is good. [Table 1-1] [Table 1-2] [Table 2] As shown in Table 1-1, Table 1-2, and Table 2, Examples 1 to 23 containing the specific oligosaccharide B ensured the polishing speed and improved the polishing selectivity, and further, the polishing unevenness was suppressed. Regarding Examples 10-13 containing ammonium polyacrylate or citric acid as compound C, the grinding selectivity was further improved. Regarding Examples 16 to 23 containing acetylpropionic acid, propionic acid, vanillic acid, p-hydroxybenzoic acid or formic acid as compound C, the storage stability was good. Furthermore, the observation images of the surface of the silicon nitride film polished using the polishing liquid composition of Example 1 and Comparative Example 4 are shown in FIGS. 1 and 2. As shown in FIG. 1, on the surface of the silicon nitride film polished by the polishing liquid composition of Example 1, uneven polishing was not confirmed by visual inspection. On the other hand, as shown in FIG. 2, on the surface of the silicon nitride film polished by the polishing liquid composition of Comparative Example 4, uneven polishing was also confirmed by visual inspection. [Industrial Applicability] The polishing liquid composition of the present invention can be used in a method for manufacturing a semiconductor substrate for high density or high integration.
