JP2019099590A - Polishing liquid composition - Google Patents
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本開示は、酸化セリウム粒子を含有する研磨液組成物、これを用いた半導体基板の製造方法及び研磨方法に関する。 The present disclosure relates to a polishing composition containing cerium oxide particles, a method of manufacturing a semiconductor substrate using the same, and a polishing method.
ケミカルメカニカルポリッシング（ＣＭＰ）技術とは、加工しようとする被研磨基板の表面と研磨パッドとを接触させた状態で研磨液をこれらの接触部位に供給しつつ被研磨基板及び研磨パッドを相対的に移動させることにより、被研磨基板の表面凹凸部分を化学的に反応させると共に機械的に除去して平坦化させる技術である。 In chemical mechanical polishing (CMP) technology, the polishing substrate is supplied to these contact areas while the surface of the substrate to be processed is in contact with the polishing pad, and the substrate and polishing pad are relatively placed. This technique is a technique for chemically reacting and mechanically removing and planarizing the surface irregularities of the substrate to be polished by moving it.
現在では、半導体素子の製造工程における、層間絶縁膜の平坦化、シャロートレンチ素子分離構造（以下「素子分離構造」ともいう）の形成、プラグ及び埋め込み金属配線の形成等を行う際には、このＣＭＰ技術が必須の技術となっている。近年、半導体素子の多層化、高精細化が飛躍的に進み、半導体素子の歩留まり及びスループット（収量）の更なる向上が要求されるようになってきている。それに伴い、ＣＭＰ工程に関しても、研磨傷フリーで且つより高速な研磨が望まれるようになってきている。例えば、シャロートレンチ素子分離構造の形成工程では、高研磨速度と共に、被研磨膜（例えば、酸化珪素膜）に対する研磨ストッパ膜（例えば、窒化珪素膜）の研磨選択性（換言すると、研磨ストッパ膜の方が被研磨膜よりも研磨されにくいという研磨の選択性）の向上が望まれている。 At the present, in the process of manufacturing a semiconductor device, the planarization of an interlayer insulating film, the formation of a shallow trench isolation structure (hereinafter also referred to as "element isolation structure"), the formation of plugs and buried metal interconnections, etc. CMP technology has become an essential technology. In recent years, with the progress in the multi-layering and high definition of semiconductor devices, the yield and throughput of semiconductor devices have been required to be further improved. Along with this, with regard to the CMP process, polishing flaws free and higher speed polishing are desired. For example, in the step of forming the shallow trench isolation structure, the polishing selectivity of the polishing stopper film (eg, silicon nitride film) to the film to be polished (eg, silicon oxide film) is high (in other words, the polishing stopper film) It is desirable to improve the selectivity of polishing, which is more difficult to polish than the film to be polished.
特許文献１には、４個以上の水酸基を有し且つアミノ基を有しない化合物（ａ）、４個以上の水酸基および１個のアミノ基を有する化合物（ｂ）、及び４個以上のアミノ基を有する化合物（ｃ）を含有するＣＭＰ研磨用エロージョン防止剤が開示されている。エロージョン防止剤とは、被研磨膜及び研磨ストッパ膜の両方が除去されるエロージョンと呼ばれる現象を防止するためにＣＭＰ研磨スラリーに添加される添加剤をいう。 In Patent Document 1, a compound (a) having 4 or more hydroxyl groups and not having an amino group, a compound (b) having 4 or more hydroxyl groups and one amino group, and 4 or more amino groups There is disclosed an anti-erosion agent for CMP, which comprises a compound (c) having The anti-erosion agent refers to an additive added to the CMP polishing slurry to prevent a phenomenon called erosion in which both the film to be polished and the polishing stopper film are removed.
近年の半導体分野においては高集積化が進んでおり、配線の複雑化や微細化が求められている。そのため、ＣＭＰ研磨では、窒化珪素膜の研磨速度を抑制しつつ研磨選択性をさらに向上させることが要求されている。 In the semiconductor field in recent years, high integration has progressed, and complexity and miniaturization of wiring are required. Therefore, in CMP polishing, it is required to further improve polishing selectivity while suppressing the polishing rate of the silicon nitride film.
本開示は、窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能な研磨液組成物、これを用いた半導体基板の製造方法及び研磨方法を提供する。 The present disclosure provides a polishing composition capable of improving polishing selectivity while suppressing the polishing rate of a silicon nitride film, and a method of manufacturing a semiconductor substrate using the same and a polishing method.
本開示は、一態様において、酸化セリウム粒子Ａと、糖組成物Ｂと、水とを含有する研磨液組成物であって、糖組成物Ｂは、糖及びその誘導体から選ばれる少なくとも１種を含み、糖組成物Ｂの１０質量％水溶液のｐＨが、３．０以上５．５以下である、研磨液組成物に関する。 The present disclosure relates, in one aspect, to a polishing composition comprising cerium oxide particles A, a sugar composition B, and water, wherein the sugar composition B contains at least one selected from sugars and their derivatives. The present invention relates to a polishing composition, wherein the pH of a 10% by mass aqueous solution of a sugar composition B is 3.0 or more and 5.5 or less.
本開示は、一態様において、本開示の研磨液組成物を用いて被研磨基板を研磨する工程を含む、半導体基板の製造方法に関する。 The present disclosure relates, in one aspect, to a method of manufacturing a semiconductor substrate, including the step of polishing a substrate to be polished using the polishing composition of the present disclosure.
本開示は、一態様において、本開示の研磨液組成物を用いて被研磨基板を研磨する工程を含む、基板の研磨方法に関する。 The present disclosure relates, in one aspect, to a method of polishing a substrate, including the step of polishing a substrate to be polished using the polishing composition of the present disclosure.
本開示によれば、窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能な研磨液組成物を提供できるという効果を奏し得る。 According to the present disclosure, it is possible to provide the polishing composition capable of improving the polishing selectivity while suppressing the polishing rate of the silicon nitride film.
本発明者らが鋭意検討した結果、酸化セリウム（以下、「セリア」ともいう）粒子を砥粒として含有する研磨液組成物において、驚くべきことに、所定の糖組成物Ｂを含有させることで、窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能となることを見いだし、本発明を完成するに至った。 As a result of intensive studies by the present inventors, it is surprising that, by containing a predetermined sugar composition B, in a polishing composition containing cerium oxide (hereinafter also referred to as "ceria") particles as abrasive grains. It has been found that the polishing selectivity can be improved while suppressing the polishing rate of the silicon nitride film, and the present invention has been completed.
すなわち、本開示は、一又は複数の実施形態において、酸化セリウム粒子Ａと、糖組成物Ｂと、水とを含有する研磨液組成物であって、糖組成物Ｂは、糖及びその誘導体から選ばれる少なくとも１種を含み、糖組成物Ｂの１０質量％水溶液のｐＨが、３．０以上５．５以下である、又は、糖組成物Ｂが、ラクトース及びソルボースから選ばれる少なくとも１種を含む組成物である、研磨液組成物（以下、「本開示の研磨液組成物」ともいう）に関する。本開示の研磨液組成物によれば、窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能となる。 That is, the present disclosure relates, in one or more embodiments, to a polishing composition comprising cerium oxide particles A, a sugar composition B, and water, wherein the sugar composition B comprises a sugar and a derivative thereof. The pH of a 10% by weight aqueous solution of a sugar composition B is at least 3.0 but not more than 5.5, or at least one kind selected from lactose and sorbose. The present invention relates to a polishing composition (hereinafter, also referred to as "the polishing composition of the present disclosure"), which is a composition containing the same. According to the polishing composition of the present disclosure, the polishing selectivity can be improved while suppressing the polishing rate of the silicon nitride film.
本開示において「研磨選択性」は、研磨ストッパ膜の研磨速度に対する被研磨膜の研磨速度の比（被研磨膜の研磨速度／研磨ストッパ膜の研磨速度）と同義であり、「研磨選択性」が高いと、前記研磨速度比が大きいことを意味する。 In the present disclosure, “polishing selectivity” is synonymous with the ratio of the polishing rate of the film to be polished to the polishing rate of the polishing stopper film (the polishing rate of the film to be polished / the polishing rate of the polishing stopper film), and “polishing selectivity” Is high, it means that the polishing rate ratio is large.
［酸化セリウム（セリア）粒子Ａ］
本開示の研磨液組成物は、研磨砥粒として酸化セリウム粒子Ａ（以下、単に「粒子Ａ」ともいう）を含有する。粒子Ａは、１種類のセリア粒子であってもよいし、２種以上のセリア粒子の組合せであってもよい。
[Cerium oxide (ceria) particles A]
The polishing composition of the present disclosure contains cerium oxide particles A (hereinafter, also simply referred to as “particles A”) as polishing abrasives. The particles A may be one type of ceria particles or a combination of two or more types of ceria particles.
粒子Ａの製造方法、形状、及び表面状態については特に限定されなくてもよい。粒子Ａとしては、例えば、コロイダルセリア、不定形セリア、セリアコートシリカ等が挙げられる。
コロイダルセリアは、例えば、特表２０１０−５０５７３５号公報の実施例１〜４に記載の方法で、ビルドアッププロセスにより得ることができる。
不定形セリアとしては、例えば、粉砕セリアおよび単結晶粉砕セリアが挙げられる。粉砕セリアは、例えば、炭酸セリウムや硝酸セリウムなどのセリウム化合物を焼成、粉砕して得ることができる。単結晶粉砕セリアは、有機酸の存在下でセリア粒子を湿式粉砕することにより得られる単結晶粉砕セリア粒子である。湿式粉砕時に使用される有機酸としては、例えば、カルボキシル基を有する有機酸が挙げられ、具体的には、ピコリン酸、グルタミン酸、アスパラギン酸、アミノ安息香酸及びｐ−ヒドロキシ安息香酸から選ばれる少なくとも１種が挙げられる。湿式粉砕方法としては、例えば、遊星ビーズミル等による湿式粉砕が挙げられる。
セリアコートシリカとしては、例えば、特開２０１５−６３４５１号公報の実施例１〜１４もしくは特開２０１３−１１９１３１号公報の実施例１〜４に記載の方法で、シリカ粒子表面の少なくとも一部が粒状セリアで被覆された構造を有する複合粒子が挙げられ、該複合粒子は、例えば、シリカ粒子にセリアを沈着させることで得ることができる。
The production method, shape, and surface state of the particles A may not be particularly limited. Examples of the particle A include colloidal ceria, amorphous ceria, ceria-coated silica and the like.
Colloidal ceria can be obtained, for example, by the buildup process according to the method described in Examples 1 to 4 of JP-A-2010-505735.
As amorphous ceria, for example, crushed ceria and single crystal crushed ceria can be mentioned. Pulverized ceria can be obtained, for example, by firing and pulverizing a cerium compound such as cerium carbonate or cerium nitrate. Single crystal ground ceria is single crystal ground ceria particles obtained by wet grinding ceria particles in the presence of an organic acid. As an organic acid used at the time of wet pulverization, for example, an organic acid having a carboxyl group can be mentioned, and specifically, at least one selected from picolinic acid, glutamic acid, aspartic acid, aminobenzoic acid and p-hydroxybenzoic acid There is a species. Examples of the wet grinding method include wet grinding using a planetary bead mill or the like.
As the ceria-coated silica, for example, at least a part of the surface of the silica particles is granular according to the method described in Examples 1 to 14 of JP-A-2015-63451 or Examples 1 to 4 of JP-A-2013-119131. Composite particles having a ceria-coated structure can be mentioned, and the composite particles can be obtained, for example, by depositing ceria on silica particles.
粒子Ａの形状としては、例えば、略球状、多面体状、ラズベリー状が挙げられる。 Examples of the shape of the particles A include, for example, a substantially spherical shape, a polyhedron shape, and a raspberry shape.
粒子Ａの平均一次粒子径は、酸化珪素膜の研磨速度向上の観点から、５ｎｍ以上が好ましく、１０ｎｍ以上がより好ましく、１５ｎｍ以上が更に好ましく、そして、研磨傷発生の抑制の観点から、３００ｎｍ以下が好ましく、２００ｎｍ以下がより好ましく、１５０ｎｍ以下が更に好ましい。より具体的には、成分Ａの平均一次粒子径は、５ｎｍ以上３００ｎｍ以下が好ましく、１０ｎｍ以上２００ｎｍ以下がより好ましく、１５ｎｍ以上１５０ｎｍ以下が更に好ましい。本開示において粒子Ａの平均一次粒子径は、ＢＥＴ（窒素吸着）法によって算出されるＢＥＴ比表面積Ｓ（ｍ2／ｇ）を用いて算出される。ＢＥＴ比表面積は、実施例に記載の方法により測定できる。 The average primary particle diameter of the particles A is preferably 5 nm or more, more preferably 10 nm or more, still more preferably 15 nm or more, from the viewpoint of improving the polishing rate of the silicon oxide film, and 300 nm or less Is preferably 200 nm or less, more preferably 150 nm or less. More specifically, the average primary particle diameter of the component A is preferably 5 nm or more and 300 nm or less, more preferably 10 nm or more and 200 nm or less, and still more preferably 15 nm or more and 150 nm or less. In the present disclosure, the average primary particle size of the particles A is calculated using the BET specific surface area S (m 2 / g) calculated by the BET (nitrogen adsorption) method. The BET specific surface area can be measured by the method described in the examples.
本開示の研磨液組成物中の粒子Ａの含有量は、粒子Ａ、糖組成物Ｂ及び水の合計含有量を１００質量％とすると、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、０．０５質量％以上が好ましく、０．１質量％以上がより好ましく、０．２質量％以上が更に好ましく、そして、同様の観点から、１０質量％以下が好ましく、７．５質量％以下がより好ましく、５質量％以下が更に好ましく、２．５質量％以下が更により好ましく、１質量％以下が更により好ましい。より具体的には、粒子Ａの含有量は、粒子Ａ、糖組成物Ｂ及び水の合計含有量を１００質量％とすると、０．０５質量％以上１０質量％以下が好ましく、０．１質量％以上７．５質量％以下がより好ましく、０．２質量％以上５質量％以下が更に好ましく、０．２質量％以上２．５質量％以下が更により好ましく、０．２質量％以上１質量％以下が更により好ましい。粒子Ａが２種以上のセリア粒子の組合せである場合、粒子Ａの含有量はそれらの合計含有量をいう。 Assuming that the total content of particle A, sugar composition B and water is 100% by mass, the content of particle A in the polishing composition of the present disclosure ensures the polishing rate of the silicon oxide film and improves the polishing selectivity. From the point of view, 0.05% by mass or more is preferable, 0.1% by mass or more is more preferable, 0.2% by mass or more is more preferable, and from the same viewpoint, 10% by mass or less is preferable, 7.5 % By mass or less is more preferable, 5% by mass or less is further preferable, 2.5% by mass or less is further more preferable, and 1% by mass or less is still more preferable. More specifically, the content of particles A is preferably 0.05% by mass or more and 10% by mass or less, based on 100% by mass of the total content of particles A, sugar composition B and water. % Or more and 7.5% by mass or less is more preferable, 0.2% by mass or more and 5% by mass or less is more preferable, 0.2% by mass or more and 2.5% by mass or less is further more preferable, 0.2% by mass or more % Or less is even more preferred. When particle A is a combination of two or more types of ceria particles, the content of particle A refers to their total content.
［糖組成物Ｂ］
本開示の研磨液組成物は、窒化珪素膜の研磨速度抑制及び研磨選択性の向上の観点から、糖組成物Ｂを含む。糖組成物Ｂは、１種類の糖組成物であってもよいし、２種以上の糖組成物の組合せであってもよい。
[Sugar composition B]
The polishing composition of the present disclosure includes the sugar composition B from the viewpoint of suppressing the polishing rate of the silicon nitride film and improving the polishing selectivity. The sugar composition B may be a single sugar composition or a combination of two or more sugar compositions.
本開示において、糖組成物Ｂは、糖及びその誘導体から選ばれる少なくとも１種（以下、「糖系化合物」ともいう）を含む組成物である。糖組成物Ｂ中の糖系化合物の含有量は、窒化珪素膜の研磨速度抑制及び研磨選択性の向上の観点から、５０質量％以上が好ましく、６０質量％以上がより好ましく、７０質量％以上が更に好ましく、８０質量％以上が更に好ましく、９０質量％以上が更に好ましく、９５質量％以上が更に好ましく、１００質量％が更に好ましい。糖組成物Ｂは、糖系化合物以外に、糖系化合物の合成に用いられうる原料（例えば、有機酸等）が含まれていてもよい。本開示の研磨液組成物は、一又は複数の実施形態において、研磨選択性向上助剤として糖組成物Ｂのみを含有するものであってもよい。研磨選択性向上助剤とは、研磨によるエロージョン及び／又はディッシングの発生を抑制し、研磨選択性を向上するために添加される添加剤をいう。糖組成物Ｂは、一実施形態において、４個以上のアミノ基を有する化合物を含まない。糖組成物Ｂは、その他の実施形態において、糖系化合物である。 In the present disclosure, the sugar composition B is a composition containing at least one selected from sugars and derivatives thereof (hereinafter also referred to as “sugar-based compounds”). The content of the sugar-based compound in the sugar composition B is preferably 50% by mass or more, more preferably 60% by mass or more, and 70% by mass or more from the viewpoint of suppressing the polishing rate of the silicon nitride film and improving the polishing selectivity. Is more preferably 80% by mass or more, further preferably 90% by mass or more, still more preferably 95% by mass or more, and still more preferably 100% by mass. The sugar composition B may contain, in addition to the sugar-based compound, a raw material (for example, an organic acid and the like) that can be used for the synthesis of the sugar-based compound. The polishing composition of the present disclosure may, in one or more embodiments, contain only the sugar composition B as a polishing selectivity improving aid. The polishing selectivity improving aid refers to an additive added to suppress the occurrence of erosion and / or dishing due to polishing and to improve polishing selectivity. Sugar composition B does not contain the compound which has four or more amino groups in one embodiment. Sugar composition B is, in another embodiment, a sugar-based compound.
糖組成物Ｂは、一又は複数の実施形態において、窒化珪素膜の研磨速度抑制及び研磨選択性の向上の観点から、１０質量％水溶液のｐＨが３．３以上５．５以下の糖組成物が挙げられ、糖組成物Ｂの１０質量％水溶液のｐＨが所定の範囲であれば、糖組成物Ｂに含まれる糖系化合物は、単糖、オリゴ糖、又は多糖のいずれでもよい。糖組成物Ｂの１０質量％水溶液のｐＨは、具体的には実施例に記載の方法により測定できる。 In one or more embodiments, the sugar composition B is a sugar composition having a pH of 3.3 or more and 5.5 or less in a 10% by mass aqueous solution from the viewpoint of suppressing the polishing rate of the silicon nitride film and improving the polishing selectivity. As long as the pH of the 10% by mass aqueous solution of the sugar composition B falls within a predetermined range, the sugar compound contained in the sugar composition B may be any of monosaccharides, oligosaccharides, or polysaccharides. The pH of the 10% by mass aqueous solution of the sugar composition B can be specifically measured by the method described in the examples.
糖組成物Ｂに含まれる糖系化合物が多糖である場合、多糖の構造としては、例えば、直鎖構造、環状構造、分岐構造が挙げられる。 In the case where the sugar-based compound contained in the sugar composition B is a polysaccharide, examples of the structure of the polysaccharide include a linear structure, a cyclic structure, and a branched structure.
糖組成物Ｂに含まれる糖組成物が多糖である場合、多糖の重量平均分子量は、窒化珪素膜の研磨速度抑制の観点から、３００以上が好ましく、５００以上がより好ましく、８００以上が更に好ましく、そして、研磨選択性の向上の観点から、１０,０００以下が好ましく、５,０００以下がより好ましく、３,０００以下が更に好ましい。より具体的には、多糖の重量平均分子量は、３００以上１０,０００以下が好ましく、５００以上５,０００以下がより好ましく、８００以上３,０００以下が更に好ましい。 When the sugar composition contained in the sugar composition B is a polysaccharide, the weight average molecular weight of the polysaccharide is preferably 300 or more, more preferably 500 or more, and still more preferably 800 or more from the viewpoint of suppressing the polishing rate of the silicon nitride film. And, from the viewpoint of improving the polishing selectivity, 10,000 or less is preferable, 5,000 or less is more preferable, and 3,000 or less is more preferable. More specifically, the weight average molecular weight of the polysaccharide is preferably 300 or more and 10,000 or less, more preferably 500 or more and 5,000 or less, and still more preferably 800 or more and 3,000 or less.
本開示において重量平均分子量は、液体クロマトグラフィー（株式会社日立製作所製、Ｌ−６０００型高速液体クロマトグラフィー）を使用し、ゲル・パーミエーション・クロマトグラフィー（ＧＰＣ）によって下記条件で測定できる。
検出器：ショーデックスＲＩ ＳＥ−６１示差屈折率検出器
カラム：東ソー株式会社製の「ＴＳＫｇｅｌ α−Ｍ」と「ＴＳＫｇｅｌ α−Ｍ」を直列につないだものを使用した。
溶離液：５０ｍｍｏｌ／ＬｉＢｒ水溶液
カラム温度：４０℃
流速：１．０ｍＬ／ｍｉｎ
標準ポリマー：分子量が既知の単分散プルラン（Ｓｈｏｄｅｘ社製のＳＴＤ−Ｐシリーズ）
In the present disclosure, the weight average molecular weight can be measured by gel permeation chromatography (GPC) under the following conditions using liquid chromatography (L-6000 high performance liquid chromatography manufactured by Hitachi, Ltd.).
Detector: Shodex RI SE-61 Differential Refractive Index Detector Column: A product obtained by connecting “TSKgel α-M” and “TSKgel α-M” manufactured by Tosoh Corporation in series.
Eluent: 50 mmol / LiBr aqueous solution Column temperature: 40 ° C
Flow rate: 1.0 mL / min
Standard polymer: Monodispersed pullulan whose molecular weight is known (STD-P series manufactured by Shodex)
糖組成物Ｂの１０質量％水溶液のｐＨは、一又は複数の実施形態において、窒化珪素膜の研磨速度抑制、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、３．０以上が好ましく、３．５以上がより好ましく、４．０以上が更に好ましく、そして、同様の観点から、５．５以下が好ましく、５．０以下がより好ましく、４．５以下が更に好ましい。同様の観点から、糖組成物Ｂの１０質量％水溶液のｐＨは、一又は複数の実施形態において、３．０以上５．５以下が好ましく、３．５以上５．０以下がより好ましく、４．０以上４．５以下が更に好ましい。本開示において、糖組成物Ｂの１０質量％水溶液のｐＨは、２５℃における値であって、ｐＨを用いて測定でき、具体的には、実施例に記載の方法で測定できる。 The pH of the 10% by mass aqueous solution of the sugar composition B is, in one or more embodiments, 3.0 from the viewpoint of suppressing the polishing rate of the silicon nitride film, securing the polishing rate of the silicon oxide film, and improving the polishing selectivity. The above is preferable, 3.5 or more is more preferable, 4.0 or more is further preferable, and from the same viewpoint, 5.5 or less is preferable, 5.0 or less is more preferable, and 4.5 or less is still more preferable. From the same viewpoint, the pH of the 10% by mass aqueous solution of the sugar composition B is preferably 3.0 or more and 5.5 or less, more preferably 3.5 or more and 5.0 or less in one or more embodiments. More preferably, it is between 0 and 4.5. In the present disclosure, the pH of a 10% by mass aqueous solution of a sugar composition B is a value at 25 ° C. and can be measured using the pH, and specifically, can be measured by the method described in the examples.
糖組成物Ｂは、一又は複数の実施形態において、窒化珪素膜の研磨速度抑制及び研磨選択性の向上の観点から、ラクトース及びソルボースから選ばれる１種又は２種以上の組合せを含む組成物が挙げられる。 The sugar composition B includes, in one or more embodiments, a composition including one or a combination of at least one selected from lactose and sorbose from the viewpoint of suppressing the polishing rate of the silicon nitride film and improving the polishing selectivity. It can be mentioned.
本開示の研磨液組成物中の糖組成物Ｂの含有量は、窒化珪素膜の研磨速度抑制、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、粒子Ａ、糖組成物Ｂ、及び水の合計含有量を１００質量％とすると、０．１質量％以上が好ましく、０．２質量％以上がより好ましく、０．３質量％以上が更に好ましく、０．４質量％以上が更に好ましく、０．５質量％以上が更に好ましく、そして、同様の観点から、２質量％以下が好ましく、１．８質量％以下がより好ましく、１．５質量％以下が更に好ましく、１．１質量％以下が更に好ましい。同様の観点から、糖組成物Ｂの含有量は、好ましくは０．１質量％以上２質量％以下、より好ましくは０．２質量％以上１．８質量％以下、更に好ましくは０．３質量％以上１．５質量％以下である。糖組成物Ｂが２種以上の糖組成物の組合せである場合、糖組成物Ｂの含有量はそれらの合計の含有量をいう。 The content of the sugar composition B in the polishing composition of the present disclosure is the particle A, the sugar composition, from the viewpoint of suppressing the polishing rate of the silicon nitride film, securing the polishing rate of the silicon oxide film, and improving the polishing selectivity. When the total content of B and water is 100% by mass, 0.1% by mass or more is preferable, 0.2% by mass or more is more preferable, 0.3% by mass or more is more preferable, and 0.4% by mass or more Is more preferably 0.5% by mass or more, and from the same viewpoint, 2% by mass or less is preferable, 1.8% by mass or less is more preferable, and 1.5% by mass or less is more preferable. 1 mass% or less is still more preferable. From the same viewpoint, the content of the sugar composition B is preferably 0.1% by mass or more and 2% by mass or less, more preferably 0.2% by mass or more and 1.8% by mass or less, still more preferably 0.3% by mass % Or more and 1.5% by mass or less. When the sugar composition B is a combination of two or more sugar compositions, the content of the sugar composition B refers to the total content of them.
本開示の研磨液組成物中の粒子Ａに対する糖組成物Ｂの質量比Ｂ／Ａ（糖組成物Ｂの含有量／粒子Ａの含有量）は、窒化珪素膜の研磨速度抑制、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、０．０１以上が好ましく、０．１以上がより好ましく、０．３以上が更に好ましく、そして、２０以下が好ましく、１０以下がより好ましく、５以下が更に好ましい。より具体的には、質量比Ｂ／Ａは、０．０１以上２０以下が好ましく、０．１以上１０以下がより好ましく、０．３以上５以下が更に好ましい。 The mass ratio B / A of the sugar composition B to the particle A in the polishing composition of the present disclosure (content of sugar composition B / content of particle A) suppresses the polishing rate of the silicon nitride film, silicon oxide film 0.01 or more is preferable, 0.1 or more is more preferable, 0.3 or more is still more preferable, and 20 or less is preferable, and 10 or less is more preferable, from the viewpoint of securing the polishing rate and improving the polishing selectivity. And 5 or less are more preferable. More specifically, the mass ratio B / A is preferably 0.01 or more and 20 or less, more preferably 0.1 or more and 10 or less, and still more preferably 0.3 or more and 5 or less.
［水］
本開示の研磨液組成物は、媒体として水を含有する。該水は、半導体基板の品質向上の観点から、イオン交換水、蒸留水、超純水等の水からなるとより好ましい。本開示の研磨液組成物における水の含有量は、粒子Ａ、糖組成物Ｂ、水及び後述する任意成分の合計含有量を１００質量％とすると、粒子Ａ、糖組成物Ｂ及び後述する任意成分を除いた残余とすることができる。
[water]
The polishing composition of the present disclosure contains water as a medium. The water is more preferably made of water such as ion exchanged water, distilled water, ultrapure water or the like from the viewpoint of improving the quality of the semiconductor substrate. Assuming that the total content of particle A, sugar composition B, water and optional components described later is 100% by mass, the content of water in the polishing composition of the present disclosure is particle A, sugar composition B and optional components described later It can be the residue from which the ingredients have been removed.
［任意成分］
（化合物Ｃ）
本開示の研磨液組成物は、緩衝能を有する化合物Ｃ（以下、「化合物Ｃ」ともいう）をさらに含有することができる。本開示の研磨液組成物が化合物Ｃをさらに含む場合、研磨液組成物のｐＨ低下を抑制でき、研磨液組成物の保存安定性を向上できる。
[Optional ingredient]
(Compound C)
The polishing composition of the present disclosure can further contain a compound C (hereinafter also referred to as “compound C”) having buffer capacity. When the polishing composition of the present disclosure further includes the compound C, the pH decrease of the polishing composition can be suppressed, and the storage stability of the polishing composition can be improved.
化合物Ｃとしては、例えば、複素環芳香族化合物等が挙げられ、具体的には、ベンゾイミダゾール、１，２，３ベンゾトリアゾール、ヒドロキシルプロリン、ヒドロキシベンゾトリアゾール、ベンジルピリジン等が挙げられる。 Examples of the compound C include heterocyclic aromatic compounds and the like, and specific examples include benzoimidazole, 1,2,3 benzotriazole, hydroxyl proline, hydroxybenzotriazole, benzyl pyridine and the like.
本開示の研磨液組成物中の化合物Ｃの含有量は、保存安定性、窒化珪素膜の研磨速度抑制、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、０．００１質量％以上が好ましく、０．００１５質量％以上がより好ましく、０．００２５質量％以上が更に好ましく、そして、１質量％以下が好ましく、０．８質量％以下がより好ましく、０．６質量％以下が更に好ましい。より具体的には、化合物Ｃの含有量は、０．００１質量％以上１質量％以下が好ましく、０．００１質量％以上０．８質量％以下がより好ましく、０．００１質量％以上０．６質量％以下が更に好ましく、０．００１５質量％以上０．６質量％以下が更に好ましく、０．００２５質量％以上０．６質量％以下が更に好ましい。 The content of Compound C in the polishing composition of the present disclosure is 0.001 mass from the viewpoint of storage stability, suppression of polishing rate of silicon nitride film, securing of polishing rate of silicon oxide film, and improvement of polishing selectivity. % Or more is preferable, 0.0015 mass% or more is more preferable, 0.0025 mass% or more is further preferable, and 1 mass% or less is preferable, 0.8 mass% or less is more preferable, 0.6 mass% or less Is more preferred. More specifically, the content of the compound C is preferably 0.001% by mass or more and 1% by mass or less, more preferably 0.001% by mass or more and 0.8% by mass or less, and 0.001% by mass or more. 6 mass% or less is further preferable, 0.0015 mass% or more and 0.6 mass% or less is further preferable, and 0.0025 mass% or more and 0.6 mass% or less is more preferable.
本開示の研磨液組成物中の粒子Ａに対する化合物Ｃの質量比Ｃ／Ａ（化合物Ｃの含有量／粒子Ａの含有量）は、保存安定性、窒化珪素膜の研磨速度抑制、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、０．０００１以上が好ましく、０．０００５以上がより好ましく、０．００１以上が更に好ましく、そして、１以下が好ましく、０．１以下がより好ましく、０．０１以下が更に好ましい。より具体的には、質量比Ｃ／Ａは、０．０００１以上１以下が好ましく、０．０００５以上０．１以下がより好ましく、０．００１以上０．０１以下が更に好ましい。 The mass ratio C / A of the compound C to the particle A in the polishing composition of the present disclosure (content of compound C / content of particle A) is storage stability, suppression of polishing rate of silicon nitride film, silicon oxide film From the viewpoint of securing the polishing rate and improving the polishing selectivity, 0.0001 or more is preferable, 0.0005 or more is more preferable, 0.001 or more is more preferable, and 1 or less is preferable, 0.1 or less More preferably, 0.01 or less is more preferable. More specifically, the mass ratio C / A is preferably 0.0001 or more and 1 or less, more preferably 0.0005 or more and 0.1 or less, and still more preferably 0.001 or more and 0.01 or less.
(その他の成分)
本開示の研磨液組成物は、必要に応じてその他の成分を含有することができる。その他の成分としては、ｐＨ調整剤、界面活性剤、糖組成物Ｂ以外の糖組成物、増粘剤、分散剤、化合物Ｃ以外の防錆剤、塩基性物質、研磨速度向上剤等が挙げられる。前記その他の成分は、本開示の効果を損なわない範囲で研磨液組成物に配合されることが好ましく、本開示の研磨液組成物中のその他の成分の含有量は、研磨速度確保の観点から、０．００１質量％以上が好ましく、０．００２５質量％以上がより好ましく、０．０１質量％以上が更に好ましく、研磨選択性向上の観点から、１質量％以下が好ましく、０．５質量％以下がより好ましく、０．１質量％以下が更に好ましい。より具体的には、その他の成分の含有量は、０．００１質量％以上１質量％以下が好ましく、０．００２５質量％以上０．５質量％以下がより好ましく、０．０１質量％以上０．１質量％以下が更に好ましい。
(Other ingredients)
The polishing composition of the present disclosure may contain other components as needed. Other components include pH adjusters, surfactants, sugar compositions other than sugar composition B, thickeners, dispersants, corrosion inhibitors other than compound C, basic substances, polishing rate improvers, etc. Be The other components are preferably blended in the polishing composition as long as the effects of the present disclosure are not impaired, and the content of the other components in the polishing composition of the present disclosure is from the viewpoint of securing the polishing rate. 0.001% by mass or more is preferable, 0.0025% by mass or more is more preferable, 0.01% by mass or more is more preferable, and from the viewpoint of improving polishing selectivity, 1% by mass or less is preferable, 0.5% by mass The following is more preferable, 0.1 mass% or less is still more preferable. More specifically, the content of the other components is preferably 0.001% by mass or more and 1% by mass or less, more preferably 0.0025% by mass or more and 0.5% by mass or less, and 0.01% by mass or more More preferably, 1% by mass or less.
前記ｐＨ調整剤としては、例えば、酸性化合物及びアルカリ化合物が挙げられる。酸性化合物としては、例えば、塩酸、硝酸、硫酸等の無機酸；酢酸、シュウ酸、クエン酸、及びリンゴ酸等の有機酸；等が挙げられる。なかでも、汎用性の観点から、塩酸、硝酸及び酢酸から選ばれる少なくとも１種が好ましく、塩酸及び酢酸から選ばれる少なくとも１種がより好ましい。アルカリ化合物としては、例えば、アンモニア、及び水酸化カリウム等の無機アルカリ化合物；アルキルアミン、及びアルカノールアミン等の有機アルカリ化合物；等が挙げられる。なかでも、半導体基板の品質向上の観点から、アンモニア及びアルキルアミンから選ばれる少なくとも１種が好ましく、アンモニアがより好ましい。 As said pH adjuster, an acidic compound and an alkali compound are mentioned, for example. Examples of the acidic compound include inorganic acids such as hydrochloric acid, nitric acid and sulfuric acid; organic acids such as acetic acid, oxalic acid, citric acid and malic acid; and the like. Among them, from the viewpoint of versatility, at least one selected from hydrochloric acid, nitric acid and acetic acid is preferable, and at least one selected from hydrochloric acid and acetic acid is more preferable. Examples of the alkali compound include inorganic alkali compounds such as ammonia and potassium hydroxide; and organic alkali compounds such as alkylamine and alkanolamine. Among them, at least one selected from ammonia and alkylamine is preferable, and ammonia is more preferable, from the viewpoint of improving the quality of the semiconductor substrate.
前記界面活性剤としては、アニオン性界面活性剤及びノニオン性界面活性剤（非イオン性界面活性剤）等が挙げられる。アニオン性界面活性剤としては、例えば、アルキルエーテル酢酸塩、アルキルエーテルリン酸塩、及びアルキルエーテル硫酸塩等が挙げられる。ノニオン性界面活性剤としては、例えば、ポリアクリルアミド等のノニオン性ポリマー、ポリオキシアルキレンアルキルエーテル、ポリオキシエチレンジスチレン化フェニルエーテル等が挙げられる。 As said surfactant, anionic surfactant, nonionic surfactant (nonionic surfactant), etc. are mentioned. Examples of the anionic surfactant include alkyl ether acetates, alkyl ether phosphates, and alkyl ether sulfates. Examples of the nonionic surfactant include nonionic polymers such as polyacrylamide, polyoxyalkylene alkyl ether, polyoxyethylene distyrenated phenyl ether and the like.
本開示の研磨液組成物は、一又は複数の実施形態において、非イオン性界面活性剤を実質的に含まないものとすることができる。本開示において、「非イオン性界面活性剤を実質的に含まない」とは、研磨液組成物中の非イオン性界面活性剤の含有量が、０．１質量％以下であることをいう。酸化珪素膜の研磨速度の確保、及び研磨選択性向上の観点から、本開示の研磨液組成物中の非イオン性界面活性剤の含有量は、０．０１質量％未満が好ましく、０．００５質量％以下が更に好ましく、実質的に０質量％が更に好ましい。 The polishing composition of the present disclosure may be substantially free of non-ionic surfactant in one or more embodiments. In the present disclosure, “substantially free of nonionic surfactant” means that the content of nonionic surfactant in the polishing composition is 0.1% by mass or less. From the viewpoint of securing the polishing rate of the silicon oxide film and improving the polishing selectivity, the content of the nonionic surfactant in the polishing composition of the present disclosure is preferably less than 0.01% by mass, and 0.005 % By mass or less is more preferable, and substantially 0% by mass is even more preferable.
本開示の研磨液組成物は、一又は複数の実施形態において、４個以上のアミノ基を有する化合物を含んでもよいし、含まなくてもよい。 The polishing composition of the present disclosure may or may not include a compound having four or more amino groups in one or more embodiments.
本開示の研磨液組成物は、本開示の効果を損なわない範囲で、防腐剤を含有することができる。
防腐剤としては、例えば、メチルイソチアゾリノン、クロロメチルイソチアゾリノン、オクチルイソチアゾリノン、ジクロロオクチルイソチアゾリノン、ベンズイソチアゾリノン、２−メチル−１，２−ベンズイソチアゾリン−３−オン）等のイソチアゾリン化合物が挙げられる。
その他の防腐剤としては、グルタルアルデヒド等のアルデヒド化合物；２−ブロモ−２−ニトロプロパン−１,３−ジオール、２,２−ジブロモ−３−ニトリロプロピオンアミド等の有機臭素化合物；テトラキス(ヒドロキシメチル)ホスホニウム塩類；過酸化水素；次亜塩素酸アンモニウム塩；１,３−ジヒドロキシベンゼン；１,３−ジメチロール−５,５−ジメチルヒダントイン等のヒダントイン骨格を構造式中に含む化合物；Ｎ，Ｎ’，Ｎ’’−トリス（ヒドロキシエチル）ヘキサヒドロ−ｓ−トリアジン等のトリアジン化合物；１−（シス−３−クロロアリル）−３,５,７−トリアザ−１−アゾニアアダマンタンクロリド、セチルピリジニウムクロリド、ベンザルコニウムクロリド、ベンゼトニウムクロリド等の有機塩素化合物；ポリエチレングリコール、ジプロピレングリコール等のグリコール化合物；２−フェノキシエタノール、４−クロロ−３−クレゾール等のフェノール化合物；３,５,６−トリクロロ−２−ピリジノール等のピリジン化合物；イミダゾリジニルウレア、ジアゾリジニルウレア等のウレア化合物；ピリチオンナトリウム；等が挙げられる。
The polishing composition of the present disclosure can contain a preservative as long as the effects of the present disclosure are not impaired.
Examples of preservatives include methylisothiazolinone, chloromethylisothiazolinone, octylisothiazolinone, dichlorooctylisothiazolinone, benzisothiazolinone, 2-methyl-1,2-benzisothiazolin-3-one) and the like. And isothiazoline compounds of
Other preservatives include aldehyde compounds such as glutaraldehyde; organic bromine compounds such as 2-bromo-2-nitropropane-1,3-diol and 2,2-dibromo-3-nitrilopropionamide; tetrakis (hydroxymethyl) A) phosphonium salts; hydrogen peroxide; ammonium hypochlorite salts; 1,3-dihydroxybenzenes; compounds containing a hydantoin skeleton such as 1,3-dimethylol-5,5-dimethylhydantoin in the structural formula; Triazine compounds such as N ′ ′-tris (hydroxyethyl) hexahydro-s-triazine; 1- (cis-3-chloroallyl) -3,5,7-triaza-1-azoniaadamantane chloride, cetyl pyridinium chloride, benza Organochlorine compounds such as gluconium chloride and benzethonium chloride; Glycol compounds such as Cole and dipropylene glycol; phenolic compounds such as 2-phenoxyethanol and 4-chloro-3-cresol; pyridine compounds such as 3,5,6-trichloro-2-pyridinol; imidazolidinyl urea and diazolidinyl Urea compounds such as rare; sodium pyrithione; and the like.
［研磨液組成物］
本開示の研磨液組成物は、例えば、粒子Ａ及び水を含むスラリー、糖組成物Ｂ、並びに、所望により化合物Ｃ及びその他の成分を公知の方法で配合する工程を含む製造方法によって製造できる。例えば、本開示の研磨液組成物は、少なくとも粒子Ａ、糖組成物Ｂ及び水を配合してなるものとすることができる。粒子Ａが複数種類の酸化セリウム粒子の組合せである場合、粒子Ａは、複数種類の酸化セリウム粒子をそれぞれ配合することにより得ることができる。糖組成物Ｂが複数種類の糖の組合せである場合、糖組成物Ｂは、複数種類の糖をそれぞれ配合することにより得ることができる。本開示において「配合する」とは、粒子Ａ、糖組成物Ｂ及び水、並びに必要に応じて化合物Ｃ及びその他の成分を同時に又は順に混合することを含む。混合する順序は特に限定されない。前記配合は、例えば、ホモミキサー、ホモジナイザー、超音波分散機及び湿式ボールミル等の混合器を用いて行うことができる。本開示の研磨液組成物の製造方法における各成分の配合量は、上述した本開示の研磨液組成物中の各成分の含有量と同じとすることができる。
[Abrasive liquid composition]
The polishing composition of the present disclosure can be produced by, for example, a production method including a step of blending a slurry containing particles A and water, a sugar composition B, and optionally, compound C and other components by a known method. For example, the polishing composition of the present disclosure can be a blend of at least particle A, sugar composition B and water. When the particle A is a combination of plural types of cerium oxide particles, the particle A can be obtained by blending plural types of cerium oxide particles. When the sugar composition B is a combination of a plurality of types of sugars, the sugar composition B can be obtained by blending a plurality of types of sugars. In the present disclosure, "blending" includes mixing the particle A, the sugar composition B and water, and optionally the compound C and other components simultaneously or sequentially. The order of mixing is not particularly limited. The compounding can be performed using, for example, a mixer such as a homomixer, a homogenizer, an ultrasonic disperser, and a wet ball mill. The compounding amount of each component in the method of manufacturing a polishing composition of the present disclosure can be the same as the content of each component in the polishing composition of the present disclosure described above.
本開示の研磨液組成物の実施形態は、全ての成分が予め混合された状態で市場に供給される、いわゆる１液型であってもよいし、使用時に混合される、いわゆる２液型であってもよい。２液型の研磨液組成物の一実施形態としては、粒子Ａを含む第１液と、糖組成物Ｂを含む第２液とから構成され、使用時に第１液と第２液とが混合されるものが挙げられる。第１液と第２液との混合は、研磨対象の表面への供給前に行われてもよいし、これらは別々に供給されて被研磨基板の表面上で混合されてもよい。第１液及び第２液はそれぞれ必要に応じて上述した化合物Ｃ及びその他の成分を含有することができる。 The embodiment of the polishing composition of the present disclosure may be a so-called one-component type that is supplied to the market in a state in which all the components are previously mixed, or a so-called two-component type that is mixed at the time of use. It may be. One embodiment of a two-component polishing liquid composition comprises a first liquid containing particles A and a second liquid containing sugar composition B, and the first liquid and the second liquid are mixed at the time of use. Are listed. The mixing of the first liquid and the second liquid may be performed before the supply to the surface to be polished, or they may be separately supplied and mixed on the surface of the substrate to be polished. The first liquid and the second liquid can contain the above-described compound C and other components as needed.
本開示の研磨液組成物のｐＨは、窒化珪素膜の研磨速度抑制、酸化珪素膜の研磨速度の確保及び研磨選択性の向上の観点から、４．０以上が好ましく、４．５以上がより好ましく、５．０以上が更に好ましく、そして、９．５以下が好ましく、９．０以下がより好ましく、９．０未満が更に好ましく、８．５以下が更に好ましく、８．０以下が更に好ましい。より具体的には、本開示の研磨液組成物のｐＨは、４．０以上９．５以下が好ましく、４．０以上９．０以下がより好ましく、４．０以上９．０未満が更に好ましく、４．０以上８．５以下が更に好ましく、４．０以上８．０以下が更に好ましく、４．５以上８．０以下が更に好ましく、５．０以上８．０以下が更に好ましい。本開示において、研磨液組成物のｐＨは、２５℃における値であって、ｐＨメータを用いて測定でき、具体的には、実施例に記載の方法で測定できる。 The pH of the polishing composition of the present disclosure is preferably 4.0 or more, more preferably 4.5 or more, from the viewpoints of suppressing the polishing rate of the silicon nitride film, securing the polishing rate of the silicon oxide film, and improving the polishing selectivity. Preferably, 5.0 or more is more preferable, and 9.5 or less is preferable, 9.0 or less is more preferable, less than 9.0 is more preferable, 8.5 or less is more preferable, and 8.0 or less is more preferable . More specifically, the pH of the polishing composition of the present disclosure is preferably 4.0 or more and 9.5 or less, more preferably 4.0 or more and 9.0 or less, and further preferably 4.0 or more and less than 9.0. Preferably, 4.0 or more and 8.5 or less are more preferable, 4.0 or more and 8.0 or less are more preferable, 4.5 or more and 8.0 or less are more preferable, and 5.0 or more and 8.0 or less are more preferable. In the present disclosure, the pH of the polishing composition is a value at 25 ° C. and can be measured using a pH meter, and specifically, can be measured by the method described in the examples.
本開示において「研磨液組成物中の各成分の含有量」とは、研磨液組成物の研磨への使用を開始する時点での前記各成分の含有量をいう。本開示の研磨液組成物は、その安定性が損なわれない範囲で濃縮された状態で保存および供給されてもよい。この場合、製造・輸送コストを低くできる点で好ましい。そしてこの濃縮液は、必要に応じて水で適宜希釈して研磨工程で使用することができる。希釈割合としては５〜１００倍が好ましい。 In the present disclosure, the “content of each component in the polishing composition” refers to the content of each component at the time of starting use of the polishing composition for polishing. The polishing composition of the present disclosure may be stored and supplied in a concentrated state as long as its stability is not impaired. In this case, it is preferable in that the manufacturing and transportation costs can be reduced. And this concentrated liquid can be suitably diluted with water as needed, and can be used in a grinding process. The dilution ratio is preferably 5 to 100 times.
［被研磨膜］
本開示の研磨液組成物を用いて研磨される被研磨膜としては、例えば、酸化珪素膜が挙げられる。したがって、本開示の研磨液組成物は、半導体基板の素子分離構造を形成する工程で行われる酸化珪素膜の研磨に好適に使用できる。
[Abrasive film]
As a to-be-polished film | membrane grind | polished using the polishing liquid composition of this indication, a silicon oxide film is mentioned, for example. Therefore, the polishing composition of the present disclosure can be suitably used for polishing a silicon oxide film performed in the step of forming an element isolation structure of a semiconductor substrate.
［研磨液キット］
本開示は、一態様において、研磨液組成物を製造するためのキットであって、粒子Ａを含有する分散液が容器に収納された粒子Ａ分散液、及び、前記粒子Ａ分散液とは別の容器に収納された糖組成物Ｂを含む、研磨液キット（以下、「本開示の研磨液キット」ともいう）に関する。本開示の研磨液キットによれば、窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能な研磨液組成物が得られうる。
[Abrasive fluid kit]
The present disclosure is, in one aspect, a kit for producing a polishing composition, which is different from a particle A dispersion in which a dispersion containing particles A is contained in a container, and the particle A dispersion. The polishing liquid kit (hereinafter, also referred to as “the polishing liquid kit according to the present disclosure”) includes the sugar composition B housed in the container of According to the polishing liquid kit of the present disclosure, a polishing liquid composition capable of improving the polishing selectivity while suppressing the polishing rate of the silicon nitride film can be obtained.
本開示の研磨液キットの一実施形態としては、例えば、粒子Ａ及び水を含む分散液（第１液）と糖組成物Ｂを含む溶液（第２液）とを相互に混合されていない状態で含有し、これらが使用時に混合される研磨液キット（２液型研磨液組成物）が挙げられる。前記第１液と前記第２液とが混合された後、必要に応じて水を用いて希釈されてもよい。前記第１液及び第２液にはそれぞれ、必要に応じて上述した化合物Ｃ及びその他の成分が含まれていてもよい。 In one embodiment of the polishing liquid kit according to the present disclosure, for example, a state in which a dispersion (first liquid) containing particles A and water and a solution (second liquid) containing sugar composition B are not mixed with each other. And a polishing solution kit (two-component polishing solution composition) in which these are mixed at the time of use. After the first solution and the second solution are mixed, they may be diluted with water as needed. The first liquid and the second liquid may contain the above-described compound C and other components as necessary.
［半導体基板の製造方法］
本開示は、一態様において、本開示の研磨液組成物を用いて被研磨基板を研磨する工程（以下、「本開示の研磨液組成物を用いた研磨工程」ともいう）を含む、半導体基板の製造方法（以下、「本開示の半導体基板の製造方法」ともいう。）に関する。本開示の半導体基板の製造方法によれば、研磨工程における窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能となるため、基板品質が向上した半導体基板を効率よく製造できるという効果が奏されうる。
[Method of manufacturing a semiconductor substrate]
The present disclosure, in one aspect, includes a semiconductor substrate including a step of polishing a substrate to be polished using the polishing composition of the present disclosure (hereinafter, also referred to as “polishing step using the polishing composition of the present disclosure”). And a method of manufacturing the semiconductor substrate (hereinafter, also referred to as “the method of manufacturing a semiconductor substrate of the present disclosure”). According to the method of manufacturing a semiconductor substrate of the present disclosure, it is possible to improve the polishing selectivity while suppressing the polishing rate of the silicon nitride film in the polishing step, and therefore it is possible to efficiently produce the semiconductor substrate with the improved substrate quality. An effect can be achieved.
本開示の半導体基板の製造方法の具体例としては、まず、シリコン基板を酸化炉内で酸素に晒すことよりその表面に二酸化シリコン層を成長させ、次いで、当該二酸化シリコン層上に窒化珪素（Ｓｉ3Ｎ4）膜又はポリシリコン膜等の研磨ストッパ膜を、例えばＣＶＤ法（化学気相成長法）にて形成する。次に、シリコン基板と前記シリコン基板の一方の主面側に配置された研磨ストッパ膜とを含む基板、例えば、シリコン基板の二酸化シリコン層上に研磨ストッパ膜が形成された基板に、フォトリソグラフィー技術を用いてトレンチを形成する。次いで、例えば、シランガスと酸素ガスを用いたＣＶＤ法により、トレンチ埋め込み用の被研磨膜である酸化珪素（ＳｉＯ2）膜を形成し、研磨ストッパ膜が被研磨膜（酸化珪素膜）で覆われた被研磨基板を得る。酸化珪素膜の形成により、前記トレンチは酸化珪素膜の酸化珪素で満たされ、研磨ストッパ膜の前記シリコン基板側の面の反対面は酸化珪素膜によって被覆される。このようにして形成された酸化珪素膜のシリコン基板側の面の反対面は、下層の凸凹に対応して形成された段差を有する。次いで、ＣＭＰ法により、酸化珪素膜を、少なくとも研磨ストッパ膜のシリコン基板側の面の反対面が露出するまで研磨し、より好ましくは、酸化珪素膜の表面と研磨ストッパ膜の表面とが面一になるまで酸化珪素膜を研磨する。本開示の研磨液組成物は、このＣＭＰ法による研磨を行う工程に用いることができる。 As a specific example of the method of manufacturing a semiconductor substrate of the present disclosure, first, a silicon dioxide layer is grown on the surface by exposing the silicon substrate to oxygen in an oxidation furnace, and then silicon nitride (Si) is formed on the silicon dioxide layer. A polishing stopper film such as a 3 N 4 film or a polysilicon film is formed by, for example, a CVD method (chemical vapor deposition method). Next, a photolithography technique is applied to a substrate including a silicon substrate and a polishing stopper film disposed on one principal surface side of the silicon substrate, for example, a substrate having a polishing stopper film formed on a silicon dioxide layer of a silicon substrate. To form a trench. Then, for example, a silicon oxide (SiO 2 ) film, which is a film to be polished for burying a trench, is formed by a CVD method using silane gas and oxygen gas, and the polishing stopper film is covered with the film to be polished (silicon oxide film). The substrate to be polished is obtained. By the formation of the silicon oxide film, the trench is filled with silicon oxide of silicon oxide film, and the opposite surface of the polishing stopper film on the side of the silicon substrate is covered with the silicon oxide film. The surface opposite to the surface on the silicon substrate side of the silicon oxide film thus formed has a step formed corresponding to the unevenness of the lower layer. Next, the silicon oxide film is polished by the CMP method until at least the surface opposite to the surface on the silicon substrate side of the polishing stopper film is exposed. More preferably, the surface of the silicon oxide film is flush with the surface of the polishing stopper film. The silicon oxide film is polished until The polishing composition of the present disclosure can be used in the step of polishing by this CMP method.
ＣＭＰ法による研磨では、被研磨基板の表面と研磨パッドとを接触させた状態で、本開示の研磨液組成物をこれらの接触部位に供給しつつ被研磨基板及び研磨パッドを相対的に移動させることにより、被研磨基板の表面の凹凸部分を平坦化させる。本開示の半導体基板の製造方法において、シリコン基板の二酸化シリコン層と研磨ストッパ膜との間に他の絶縁膜が形成されていてもよいし、被研磨膜（例えば、酸化珪素膜）と研磨ストッパ膜（例えば、窒化珪素膜）との間に他の絶縁膜が形成されていてもよい。 In the polishing by the CMP method, in a state in which the surface of the substrate to be polished is in contact with the polishing pad, the substrate to be polished and the polishing pad are relatively moved while supplying the polishing composition of the present disclosure to these contact sites. As a result, the uneven portion of the surface of the substrate to be polished is planarized. In the method of manufacturing a semiconductor substrate according to the present disclosure, another insulating film may be formed between the silicon dioxide layer of the silicon substrate and the polishing stopper film, or the film to be polished (for example, silicon oxide film) and the polishing stopper Another insulating film may be formed between the film (for example, a silicon nitride film).
本開示の研磨液組成物を用いた研磨工程において、研磨パッドの回転数は、例えば、３０〜２００ｒ／分、被研磨基板の回転数は、例えば、３０〜２００ｒ／分、研磨パッドを備えた研磨装置に設定される研磨荷重は、例えば、２０〜５００ｇ重／ｃｍ2、研磨液組成物の供給速度は、例えば、１０〜５００ｍＬ/分以下に設定できる。研磨液組成物が２液型研磨液組成物の場合、第１液及び第２液のそれぞれの供給速度（又は供給量）を調整することで、被研磨膜及び研磨ストッパ膜のそれぞれの研磨速度や、被研磨膜と研磨ストッパ膜との研磨速度比（研磨選択性）を調整できる。 In the polishing process using the polishing composition of the present disclosure, the rotation speed of the polishing pad is, for example, 30 to 200 r / min, and the rotation speed of the substrate to be polished is, for example, 30 to 200 r / min. The polishing load set in the polishing apparatus can be set, for example, to 20 to 500 gf / cm 2 , and the supply rate of the polishing composition can be set to, for example, 10 to 500 mL / min or less. When the polishing composition is a two-component polishing composition, the polishing rates of the film-to-be-polished and the polishing stopper film can be adjusted by adjusting the respective supply rates (or amounts) of the first and second liquids. Also, the polishing speed ratio (polishing selectivity) between the film to be polished and the polishing stopper film can be adjusted.
本開示の研磨液組成物を用いた研磨工程において、被研磨膜（例えば、酸化珪素膜）の研磨速度は、生産性向上の観点から、好ましくは２０００Å／分以上、より好ましくは３０００Å／分以上、更に好ましくは４０００Å／分以上である。 In the polishing process using the polishing composition of the present disclosure, the polishing rate of the film to be polished (for example, silicon oxide film) is preferably 2000 Å / min or more, more preferably 3000 Å / min or more from the viewpoint of productivity improvement. More preferably, it is 4000 Å / min or more.
本開示の研磨液組成物を用いた研磨工程において、研磨ストッパ膜（例えば、窒化珪素膜）の研磨速度は、研磨選択性向上及び研磨時間の短縮化の観点から、好ましくは５００Å／分以下、より好ましくは３００Å／分以下、更に好ましくは１５０Å／分以下である。 In the polishing process using the polishing composition of the present disclosure, the polishing rate of the polishing stopper film (for example, silicon nitride film) is preferably 500 Å / min or less from the viewpoint of improving polishing selectivity and shortening polishing time. More preferably, it is 300 Å / min or less, more preferably 150 Å / min or less.
本開示の研磨液組成物を用いた研磨工程において、研磨速度比（被研磨膜の研磨速度／研磨ストッパ膜の研磨速度）は、研磨時間の短縮化の観点から、５以上が好ましく、１０以上がより好ましく、２０以上が更に好ましく、４０以上が更により好ましい。本開示において研磨選択性は、研磨ストッパの研磨速度に対する被研磨膜の研磨速度の比（被研磨膜の研磨速度／研磨ストッパ膜の研磨速度）と同義であり、研磨選択性が高いとは、研磨速度比が大きいことを意味する。 In the polishing process using the polishing composition of the present disclosure, the polishing rate ratio (the polishing rate of the film to be polished / the polishing rate of the polishing stopper film) is preferably 5 or more, 10 or more from the viewpoint of shortening the polishing time. Is more preferable, 20 or more is further preferable, and 40 or more is even more preferable. In the present disclosure, the polishing selectivity is synonymous with the ratio of the polishing rate of the film to be polished to the polishing rate of the polishing stopper (the polishing rate of the film to be polished / the polishing rate of the polishing stopper film). It means that the polishing rate ratio is large.
［研磨方法］
本開示は、一態様において、本開示の研磨液組成物を用いて被研磨基板を研磨する工程（研磨工程）を含む、基板の研磨方法（以下、「本開示の研磨方法」ともいう）に関する。
[Polishing method]
The present disclosure relates, in one aspect, to a method for polishing a substrate (hereinafter, also referred to as “polishing method of the present disclosure”) including the step of polishing a substrate to be polished using the polishing composition of the present disclosure (polishing step). .
本開示の研磨方法を使用することにより、研磨工程における窒化珪素膜の研磨速度を抑制しつつ、研磨選択性の向上が可能となるため、基板品質が向上した半導体基板の生産性を向上できるという効果が奏されうる。具体的な研磨の方法及び条件は、上述した本開示の半導体基板の製造方法と同じようにすることができる。 By using the polishing method of the present disclosure, it is possible to improve the polishing selectivity while suppressing the polishing rate of the silicon nitride film in the polishing step, thereby improving the productivity of the semiconductor substrate with the improved substrate quality. An effect can be achieved. The specific polishing method and conditions can be the same as the method of manufacturing a semiconductor substrate of the present disclosure described above.
１．研磨液組成物の調製（実施例１〜９及び比較例１〜１０）
水と砥粒（粒子Ａ）と添加剤（糖組成物Ｂ、化合物Ｃ）とを下記表１の含有量（有効分）となるように混合して実施例１〜９及び比較例１〜１０の研磨液組成物を得た。研磨液組成物のｐＨは、酸性化合物として塩酸を、アルカリ性化合物としてアンモニア水を用いて調整した。
1. Preparation of Polishing Liquid Composition (Examples 1 to 9 and Comparative Examples 1 to 10)
Water, abrasive grains (particles A) and additives (sugar composition B, compound C) are mixed so as to have contents (effective components) in Table 1 below, and Examples 1 to 9 and Comparative Examples 1 to 10 The polishing liquid composition of The pH of the polishing composition was adjusted using hydrochloric acid as the acidic compound and aqueous ammonia as the alkaline compound.
研磨液組成物の調製に用いた粒子Ａ、糖組成物Ｂ及び化合物Ｃを以下に示す。
＜粒子Ａ＞
コロイダルセリア［平均一次粒径９９ｎｍ、ＢＥＴ比表面積８．４ｍ2／ｇ、阿南化成社製の「ＺＥＮＵＳ ＨＣ９０」］
不定形セリアＡ１［平均一次粒径７０ｎｍ、ＢＥＴ比表面積１１．８ｍ2／ｇ、昭和電工社製の粉砕セリア「ＧＰＬ−Ｃ１０１０」］
不定形セリアＡ２［平均一次粒径１７．８ｎｍ、ＢＥＴ比表面積４６．８ｍ2／ｇ、セリア粒子をピコリン酸の存在下で湿式粉砕して得られた単結晶粉砕セリア粒子］
＜糖組成物Ｂ＞
Ｂ１：ラクトース［ＤＯＭＯ社製の「Ｌａｃｔｏｐｕｒｅ Ｒｅｆｉｎｅｄ Ｐoｗｄｅｒ」、二糖、分子量３４２］
Ｂ２：ソルボース［和光純薬社製の「ソルボース」、単糖、分子量１８０］
Ｂ４：フルクトース［単糖、分子量１８０］
Ｂ５：スクロース［二糖、分子量３４２］
Ｂ６：デキストリン［三和澱粉工業社製の「サンデック♯３００」、多糖、重量平均分子量２９５０］
Ｂ７：Ｄ（＋）ガラクトース［単糖、分子量１８０］
Ｂ８：Ｄソルビトール［糖アルコール、分子量１８２］
Ｂ９：α−シクロデキストリン［環状オリゴ糖、分子量９７３］
Ｂ１０：キシリトール［糖アルコール、分子量１５２］
＜化合物Ｃ＞
ベンゾイミダゾール
The particles A, the sugar composition B and the compound C used for the preparation of the polishing composition are shown below.
<Particle A>
Colloidal ceria [average primary particle size 99 nm, BET specific surface area 8.4 m 2 / g, "ZENUS HC90" manufactured by Anan Kasei Co., Ltd.]
Unshaped ceria A1 [average primary particle size 70 nm, BET specific surface area 11.8 m 2 / g, crushed ceria "GPL-C1010" manufactured by Showa Denko KK]
Amorphous ceria A2 [average primary particle diameter 17.8 nm, BET specific surface area 46.8 m 2 / g, single crystal crushed ceria particles obtained by wet grinding ceria particles in the presence of picolinic acid]
<Sugar composition B>
B1: Lactose [“Lactoture Refined Powder” manufactured by DOMO, disaccharide, molecular weight 342]
B2: sorbose [“Sorbose” manufactured by Wako Pure Chemical Industries, monosaccharide, molecular weight 180]
B4: fructose [monosaccharide, molecular weight 180]
B5: sucrose [disaccharide, molecular weight 342]
B6: Dextrin [SANDEC # 300 manufactured by Sanwa Starch Co., Ltd., polysaccharide, weight average molecular weight 2950]
B7: D (+) galactose [monosaccharide, molecular weight 180]
B8: D sorbitol [sugar alcohol, molecular weight 182]
B9: α-cyclodextrin [cyclic oligosaccharide, molecular weight 973]
B10: xylitol [sugar alcohol, molecular weight 152]
<Compound C>
Benzimidazole
２．各パラメータの測定方法
（１）研磨液組成物のｐＨ
研磨液組成物の２５℃におけるｐＨ値は、ｐＨメータ（東亜電波工業社製、「ＨＭ−３０Ｇ」）を用いて測定した値であり、ｐＨメータの電極を研磨液組成物へ浸漬して１分後の数値である。
2. Measuring method of each parameter (1) pH of polishing composition
The pH value of the polishing composition at 25 ° C. is a value measured using a pH meter (“HM-30G” manufactured by Toa Denpa Kogyo Co., Ltd.), and the electrode of the pH meter is dipped in the polishing composition 1 It is a number after minutes.
（２）粒子Ａの平均一次粒径
粒子Ａの平均一次粒径（ｎｍ）は、下記ＢＥＴ（窒素吸着）法によって得られる比表面積Ｓ（ｍ2／ｇ）を用い、セリア粒子の真密度を７．２ｇ／ｃｍ3として算出した。
(2) Average Primary Particle Size of Particle A The average primary particle size (nm) of particle A uses the specific surface area S (m 2 / g) obtained by the following BET (nitrogen adsorption) method to determine the true density of ceria particles. Calculated as 7.2 g / cm 3 .
（３）粒子ＡのＢＥＴ比表面積
比表面積は、セリア粒子Ａ分散液を１２０℃で３時間熱風乾燥した後、メノウ乳鉢で細かく粉砕しサンプルを得た。測定直前に１２０℃の雰囲気下で１５分間乾燥した後、比表面積測定装置（マイクロメリティック自動比表面積測定装置「フローソーブＩＩＩ２３０５」、島津製作所製）を用いて窒素吸着法（ＢＥＴ法）により測定した。
(3) BET Specific Surface Area of Particle A The specific surface area was obtained by hot-air drying the ceria particle A dispersion liquid at 120 ° C. for 3 hours, and then finely grinding it in an agate mortar to obtain a sample. After drying for 15 minutes in an atmosphere of 120 ° C. just before the measurement, it was measured by a nitrogen adsorption method (BET method) using a specific surface area measuring device (micromeritic automatic specific surface area measuring device “Flowsorb III 2305”, manufactured by Shimadzu Corporation) .
（４）糖組成物Ｂの１０質量％水溶液のｐＨ
糖組成物Ｂの１０質量％水溶液（固形分が１０質量％となるように糖組成物Ｂを純水で希釈したもの）の２５℃におけるｐＨ値を、ｐＨメータ（東亜電波工業社製、「ＨＭ−３０Ｇ」）を用いて測定した。ｐＨ値は、ｐＨメータの電極を水溶液に浸漬して１分後の数値である。
(4) pH of 10% by mass aqueous solution of sugar composition B
The pH value at 25 ° C. of a 10% by mass aqueous solution of the sugar composition B (the one obtained by diluting the sugar composition B with pure water so that the solid content is 10% by mass) was measured with a pH meter (manufactured by Toa Denpa Kogyo Co., Ltd. It measured using HM-30G "). The pH value is the value one minute after immersing the electrode of the pH meter in an aqueous solution.
３．研磨液組成物（実施例１〜９及び比較例１〜１０）の評価
［試験片の作成］
シリコンウェーハの片面に、ＴＥＯＳ−プラズマＣＶＤ法で厚さ２０００ｎｍの酸化珪素膜を形成したものから、４０ｍｍ×４０ｍｍの正方形片を切り出し、酸化珪素膜試験片を得た。
同様に、シリコンウェーハの片面に、ＣＶＤ法で厚さ３００ｎｍの窒化珪素膜を形成したものから、４０ｍｍ×４０ｍｍの正方形片を切り出し、窒化珪素膜試験片を得た。
3. Evaluation of Polishing Liquid Composition (Examples 1 to 9 and Comparative Examples 1 to 10) [Preparation of Test Pieces]
A square piece of 40 mm × 40 mm was cut out from a silicon wafer having a 2000 nm-thick silicon oxide film formed by TEOS-plasma CVD on one side of a silicon wafer to obtain a silicon oxide film test piece.
Similarly, a square piece of 40 mm × 40 mm was cut out from a silicon nitride film having a thickness of 300 nm formed on one side of a silicon wafer by a CVD method to obtain a silicon nitride film test piece.
［酸化珪素膜（被研磨膜）の研磨速度］
研磨装置として、定盤径３００ｍｍのムサシノ電子社製「ＭＡ−３００」を用いた。また、研磨パッドとしては、ニッタ・ハース社製の硬質ウレタンパッド「ＩＣ−１０００／Ｓｕｂ４００」を用いた。前記研磨装置の定盤に、前記研磨パッドを貼り付けた。前記試験片をホルダーにセットし、試験片の酸化珪素膜を形成した面が下になるように（酸化珪素膜が研磨パッドに面するように）ホルダーを研磨パッドに載せた。さらに、試験片にかかる荷重が３００ｇ重／ｃｍ2となるように、錘をホルダーに載せた。研磨パッドを貼り付けた定盤の中心に、研磨液組成物を５０ｍＬ／分の速度で滴下しながら、定盤及びホルダーのそれぞれを同じ回転方向に９０ｒ／分で１分間回転させて、酸化珪素膜試験片の研磨を行った。研磨後、超純水を用いて洗浄し、乾燥して、酸化珪素膜試験片を後述の光干渉式膜厚測定装置による測定対象とした。
[Polishing rate of silicon oxide film (film to be polished)]
As a polishing apparatus, "MA-300" manufactured by Mussano Electronics Co., Ltd., having a plate diameter of 300 mm was used. Moreover, as a polishing pad, the hard urethane pad "IC-1000 / Sub400" by Nitta Haas company was used. The polishing pad was attached to a surface plate of the polishing apparatus. The test piece was set in a holder, and the holder was placed on the polishing pad so that the surface of the test piece on which the silicon oxide film was formed faced down (so that the silicon oxide film faced the polishing pad). Furthermore, the weight was placed on the holder such that the load applied to the test piece was 300 gf / cm 2 . While dropping the polishing liquid composition at the speed of 50 mL / min to the center of the platen to which the polishing pad is attached, rotate each of the platen and the holder in the same rotation direction at 90 r / min for 1 minute to make silicon oxide The membrane test pieces were polished. After polishing, it was washed using ultrapure water and dried, and the silicon oxide film test piece was used as a measurement target by the light interference type film thickness measuring device described later.
研磨前及び研磨後において、光干渉式膜厚測定装置（大日本スクリーン社製「ラムダエースＶＭ−１０００」）を用いて、酸化珪素膜の膜厚を測定した。酸化珪素膜の研磨速度は下記式により算出し、下記表１に示した。
酸化珪素膜の研磨速度（Å／分）
＝［研磨前の酸化珪素膜厚さ（Å）−研磨後の酸化珪素膜厚さ（Å）］／研磨時間（分）
Before and after polishing, the film thickness of the silicon oxide film was measured using an optical interference type film thickness measuring device (“Lambda Ace VM-1000” manufactured by Dainippon Screen Co., Ltd.). The polishing rate of the silicon oxide film was calculated by the following equation and is shown in Table 1 below.
Polishing rate of silicon oxide film (Å / min)
= [Silicon oxide film thickness before polishing (Å)-Silicon oxide film thickness after polishing (Å)] / Polishing time (minutes)
［窒化珪素膜（研磨ストッパ膜）の研磨速度］
試験片として酸化珪素膜試験片の代わりに窒化珪素膜試験片を用いること以外は、前記［酸化珪素膜の研磨速度の測定］と同様に、窒化珪素膜の研磨及び膜厚の測定を行った。窒化珪素膜の研磨速度は下記式により算出し、下記表１に示した。
窒化珪素膜の研磨速度（Å／分）
＝［研磨前の窒化珪素膜厚さ（Å）−研磨後の窒化珪素膜厚さ（Å）］／研磨時間（分）
[Polishing rate of silicon nitride film (polishing stopper film)]
The silicon nitride film was polished and the film thickness was measured in the same manner as the above-mentioned [Measurement of polishing rate of silicon oxide film] except that a silicon nitride film test piece was used instead of the silicon oxide film test piece as a test piece. . The polishing rate of the silicon nitride film was calculated by the following equation and is shown in Table 1 below.
Polishing rate of silicon nitride film (Å / min)
= [Silicon nitride film thickness before polishing (Å)-Silicon nitride film thickness after polishing (Å)] / Polishing time (minutes)
［研磨速度比］
窒化珪素膜の研磨速度に対する酸化珪素膜の研磨速度の比を研磨速度比とし、下記式により算出し、下記表１に示した。研磨速度比の値が大きいほど、研磨選択性が高いことを示す。
研磨速度比＝酸化珪素膜の研磨速度（Å／分）／窒化珪素膜の研磨速度（Å／分）
[Polishing rate ratio]
The ratio of the polishing rate of the silicon oxide film to the polishing rate of the silicon nitride film was defined as the polishing rate ratio, and was calculated by the following equation and is shown in Table 1 below. The larger the value of the polishing rate ratio, the higher the polishing selectivity.
Polishing rate ratio = Polishing rate of silicon oxide film (Å / min) / Polishing rate of silicon nitride film (Å / min)
［安定性］
調製した研磨液組成物を２５℃で３日間静置させてｐＨを測定し、研磨液組成物の調製直後のｐＨと３日間経過後のｐＨを比較した。ｐＨ変化量が少ないほど、保存安定性が良好であると判断できる。
[Stability]
The prepared polishing composition was allowed to stand at 25 ° C. for 3 days to measure the pH, and the pH immediately after the preparation of the polishing composition was compared with the pH after 3 days. It can be judged that the storage stability is better as the amount of pH change is smaller.
表１に示されるように、所定の糖組成物Ｂを含有する実施例１〜９は、窒化珪素膜の研磨速度が抑制されつつ、研磨選択性が向上していた。化合物Ｃをさらに含む実施例８〜９は、ｐＨの低下が抑制され、保存安定性が良好であることが分かった。 As shown in Table 1, in Examples 1 to 9 containing a predetermined sugar composition B, the polishing selectivity was improved while the polishing rate of the silicon nitride film was suppressed. It was found that in Examples 8 to 9 further containing Compound C, the drop in pH was suppressed and the storage stability was good.
本開示の研磨液組成物は、高密度化又は高集積化用の半導体基板の製造方法において有用である。 The polishing composition of the present disclosure is useful in a method of manufacturing a semiconductor substrate for densification or high integration.
Claims (10)
糖組成物Ｂは、糖及びその誘導体から選ばれる少なくとも１種を含み、
糖組成物Ｂの１０質量％水溶液のｐＨが、３．０以上５．５以下である、研磨液組成物。 A polishing composition comprising cerium oxide particles A, a sugar composition B, and water,
The sugar composition B contains at least one selected from sugars and derivatives thereof,
Polishing liquid composition whose pH of 10 mass% aqueous solution of saccharide composition B is 3.0 or more and 5.5 or less.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0825213A (en) * | 1994-07-11 | 1996-01-30 | Noritake Co Ltd | Polishing surface plate for lapping device |
| US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| WO2006001558A1 (en) * | 2004-06-25 | 2006-01-05 | Cheil Industires Inc. | High selectivity cmp slurry composition for sti process in semiconductor manufacture |
| WO2011058952A1 (en) * | 2009-11-11 | 2011-05-19 | 株式会社クラレ | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| JP2012079879A (en) * | 2010-09-30 | 2012-04-19 | Kuraray Co Ltd | Chemical mechanical polishing method and slurry used for the same |
| JP2012129406A (en) * | 2010-12-16 | 2012-07-05 | Kuraray Co Ltd | Chemical mechanical polishing method and slurry used therein |
| JP2013541609A (en) * | 2010-09-08 | 2013-11-14 | ビーエーエスエフ ソシエタス・ヨーロピア | Aqueous polishing composition and method for chemical mechanical polishing of substrates for electrical equipment, mechanical equipment and optical equipment |
| JP2013251339A (en) * | 2012-05-30 | 2013-12-12 | Kuraray Co Ltd | Erosion-preventing agent for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method |
| JP2016529356A (en) * | 2013-07-18 | 2016-09-23 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | CMP composition comprising abrasive particles containing ceria |
| JP2017508833A (en) * | 2014-01-31 | 2017-03-30 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Chemical mechanical polishing (CMP) composition comprising poly (amino acid) |
-
2017
- 2017-11-28 JP JP2017227982A patent/JP7045171B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0825213A (en) * | 1994-07-11 | 1996-01-30 | Noritake Co Ltd | Polishing surface plate for lapping device |
| US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| WO2006001558A1 (en) * | 2004-06-25 | 2006-01-05 | Cheil Industires Inc. | High selectivity cmp slurry composition for sti process in semiconductor manufacture |
| WO2011058952A1 (en) * | 2009-11-11 | 2011-05-19 | 株式会社クラレ | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| JP2013541609A (en) * | 2010-09-08 | 2013-11-14 | ビーエーエスエフ ソシエタス・ヨーロピア | Aqueous polishing composition and method for chemical mechanical polishing of substrates for electrical equipment, mechanical equipment and optical equipment |
| JP2012079879A (en) * | 2010-09-30 | 2012-04-19 | Kuraray Co Ltd | Chemical mechanical polishing method and slurry used for the same |
| JP2012129406A (en) * | 2010-12-16 | 2012-07-05 | Kuraray Co Ltd | Chemical mechanical polishing method and slurry used therein |
| JP2013251339A (en) * | 2012-05-30 | 2013-12-12 | Kuraray Co Ltd | Erosion-preventing agent for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method |
| JP2016529356A (en) * | 2013-07-18 | 2016-09-23 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | CMP composition comprising abrasive particles containing ceria |
| JP2017508833A (en) * | 2014-01-31 | 2017-03-30 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Chemical mechanical polishing (CMP) composition comprising poly (amino acid) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116063928A (en) * | 2021-11-01 | 2023-05-05 | 凯斯科技股份有限公司 | Polishing slurry composition |
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