TWI742904B - Packaging structure of wide-angle ultraviolet light emitting diode - Google Patents

Abstract

The present invention provides a packaging structure of a wide-angle ultraviolet light emitting diode. An ultraviolet light emitting diode is arranged on a substrate, and a gold bonding layer is arranged around it. A quartz package is provided with a gold bonding layer below it. Silver adhesive layer, the gold adhesive layer and the silver adhesive layer are fixedly connected, so that an air layer is arranged between the quartz package and the substrate, and an air layer is arranged on the side of the quartz package corresponding to the ultraviolet light emitting diode A groove, a first distance from one side of the groove of the quartz package to the top of the quartz package is greater than or equal to one-half of a second distance of the quartz package, and the substrate is made of material It is selected from one of aluminum nitride and aluminum oxide or a combination of the above.

Description

Packaging structure of wide-angle ultraviolet light emitting diode

The present invention relates to a packaging structure of a wide-angle ultraviolet light emitting diode, in particular to a packaging structure in which the groove of a quartz package is arranged corresponding to the ultraviolet light emitting diode and is fixed on a substrate with a gold-silver adhesive layer.

With the evolution of the times and the continuous development of light-emitting diode technology, industry competition continues to intensify, and major manufacturers are gradually seeking new markets. Among them, ultraviolet light-emitting diodes, as a product with high gross profit, have gradually attracted the attention of the industry, and they have invested and deployed in this field.

Ultraviolet light-emitting diodes (UVLED) refer to LEDs with emission wavelengths below 400nm. According to the wavelength, they can be further divided into UVA (320~400nm), UVB (280~320nm), UVC (200~280nm). At present, the most widely used ultraviolet light-emitting diode products are mainly used in industrial fields such as curing of polymer materials, PCB exposure, printing, etc., and the development of private fields such as nail art, anti-counterfeiting detection, mosquito attraction, photocatalyst purification, etc., and more used in phototherapy And sterilization and other medical applications.

Ultraviolet A (UVA): Longer wavelength, between 320-400 nanometers, can penetrate clouds, glass into indoors and cars, and can penetrate into the dermis of the skin, causing sunburn. UVA can be further subdivided into UVA-1 (340~400nm) and UVA-2 (320~340nm). Among them, UVA-1 has the strongest penetrating power and can reach the dermis layer to make the skin tan, which is the most harmful to the skin, but it is also It’s the easiest thing to ignore, especially in the non-summer time, although the intensity of UVA-1 is weak, but it still exists. It will cause skin damage due to the accumulated amount for a long time; UVA-2 can reach the skin epidermis as well as UVB. It can cause skin sunburn, redness and pain, solar keratosis, and loss of transparency.

Ultraviolet B (UVB): The wavelength is in the middle, the wavelength is between 280~320 nanometers, which will be absorbed by the ozone layer, which can cause sunburn and skin redness, swelling, heat and pain. In severe cases, blisters or peeling (similar to burns and scalds) Symptoms).

Ultraviolet C (UVC): The wavelength is between 100 and 280 nanometers, but because the wavelength below 200 nanometers is vacuum ultraviolet, it can be absorbed by the air, so the wavelength of ultraviolet C (UVC) that can penetrate the atmosphere is between 200 and 280 nanometers Rice, the shorter the wavelength, the more dangerous it is, but because it can be blocked by the ozone layer, only a small amount will reach the surface of the earth.

At present, the packaging technology of ultraviolet light emitting diodes includes coaxial (Transistor outline can, TO-can) packaging and surface-mount devices (SMD) packaging. The coaxial packaging technology has good airtightness and can be Reduce the impact of ultraviolet light-emitting diode dies from the external environment, and the coaxial packaging technology uses inorganic materials for packaging, which will not cause material aging problems due to long-term ultraviolet irradiation, so it has good reliability, but coaxial packaging In the structure, pin connections are required, and its heat dissipation capacity is limited, which causes a bottleneck in the heat conduction efficiency. Therefore, the coaxial packaging technology is limited to low-power ultraviolet light emitting diodes, and the coaxial packaging is a non-planar packaging structure. There are more space requirements for the integration of modules and systems.

Surface-Mount Devices (SMD) packaging technology is a conventional packaging technology for visible light emitting diodes. It has the advantages of small size, large dispersion angle and good light emission uniformity. It is packaged in flat surface mount devices. Although the method of replacing the coaxial packaging technology can overcome the problem of space limitation, the flat surface chip packaging technology is encapsulated by organic polymer (such as silicone, acrylic or epoxy), and it is exposed to ultraviolet light. , Will destroy the chemical bonds of these high-molecular polymers.

Following the above, the conventional organic polymer sealing materials, if used in UV light emitting diode packages, have the problem of large volume. For example, the coaxial package mentioned above requires more space as a whole to accommodate its components. Or the material is prone to aging, such as the above-mentioned planar chip package, although it effectively reduces the volume, the package is easily aging by the light-emitting element. Therefore, the industry needs a package that can effectively reduce the volume and reduce the aging of the material. design.

In view of the above-mentioned problems of the prior art, the present invention provides a packaging structure for ultraviolet light emitting diodes, in which an ultraviolet light emitting diode is arranged above a substrate, and a gold bonding layer is arranged around the ultraviolet light emitting diode, and then A silver adhesive layer is provided under the quartz package corresponding to the gold adhesive layer, and then the gold adhesive layer and the silver adhesive layer are fixed to each other with a flux, and a groove is provided on the side of the quartz package corresponding to the ultraviolet light emitting diode. The packaging structure is used to reduce the volume of the overall package and avoid the problem of material aging.

One object of the present invention is to provide a packaging structure for ultraviolet light emitting diodes, which is provided with an ultraviolet light emitting diode above the substrate, and a gold bonding layer is arranged around the ultraviolet light emitting diode, corresponding to the bottom of the quartz package The gold bonding layer is provided with a silver bonding layer, and the gold bonding layer and the silver bonding layer are fixed to each other with a flux, and then a groove is provided on one side of the quartz package corresponding to the ultraviolet light emitting diode, and the packaging structure is used to avoid reflection The arrangement of the layer or the light-scattering layer reduces the volume of the overall package and avoids the problem of material aging.

In order to achieve the aforementioned objectives and effects, the present invention provides a wide-angle ultraviolet light emitting diode packaging structure, which includes a substrate and a quartz package, on which an ultraviolet light emitting diode is disposed, and A gold bonding layer is arranged around the ultraviolet light emitting diode. The gold bonding layer is fixed on the substrate through a sintering process or a yellow light process. The material of the substrate is selected from aluminum nitride and aluminum oxide. One of them or a combination of the above, the gold bonding layer is selected from one of gold and nickel gold, or a combination of the above, and a silver bonding layer is provided below the quartz package corresponding to the gold bonding layer, the The silver bonding layer is fixed under the quartz package through a sintering process, and the quartz package is fixed to the gold bonding layer and the silver bonding layer through a flux, so that the quartz package and the substrate An air layer is provided between the quartz package, and a groove is provided on the side of the quartz package corresponding to the ultraviolet light emitting diode. A distance is greater than or equal to one-half of a second distance of the quartz package, and one-half of a first width of the air layer of the quartz package is greater than or equal to a second width of the ultraviolet light emitting diode ; Using this package structure to avoid the setting of the reflective layer or the astigmatism layer, reduce the volume of the overall package.

In an embodiment of the present invention, the flux is solder paste.

In an embodiment of the present invention, the quartz package is a transparent member.

In an embodiment of the present invention, the material of the quartz package includes quartz.

In an embodiment of the present invention, a third distance from one side of the groove to the top end of the quartz package is smaller than the first distance.

In an embodiment of the present invention, the quartz package further includes a reflective portion, and the reflective portion is disposed outside one of the grooves.

In an embodiment of the present invention, the reflective portion is an aluminum reflective layer.

In an embodiment of the present invention, in the packaging structure of the wide-angle ultraviolet light emitting diode, the reflective part may be a dielectric material, and the stacking mode satisfies S/L ₁ (H ₁ L ₁ ) ^m /Air.

In an embodiment of the present invention, in the packaging structure of the wide-angle ultraviolet light emitting diode, the reflective part may be a dielectric material, and the stacking method satisfies S/(H ₁ L ₁ ) ^m (H ₂ L ₂ ) ^m /Air.

In an embodiment of the present invention, in the packaging structure of the wide-angle ultraviolet light emitting diode, the reflective part may be a dielectric material combined with an aluminum material, and the stacking method satisfies S/(L ₁ H ₁ ) ^m /Al/Air .

In order to enable your reviewer to have a further understanding and understanding of the features of the present invention and the effects achieved, the following examples and accompanying descriptions are provided. The description is as follows:

The present invention provides a packaging structure of ultraviolet light-emitting diodes, which is arranged above a substrate with ultraviolet light-emitting diodes, and a gold bonding layer is arranged around the ultraviolet light-emitting diodes, and the gold bonding layer is corresponding to the bottom of the quartz package A silver bonding layer is provided, and then the gold bonding layer and the silver bonding layer are fixed to each other with flux, and a groove is provided on the side of the quartz package corresponding to the ultraviolet light emitting diode, and the package structure is used to reduce the volume of the overall package , And avoid the problem of material aging.

Please refer to Figure 1, which is a schematic structural diagram of an embodiment of the present invention. As shown in the figure, this embodiment is a wide-angle ultraviolet light emitting diode package structure 1, which includes a substrate 10 and a quartz package 20. The substrate 10 and the quartz package 20 are connected to each other by two metal bonding layers and flux. The material of the substrate 10 is selected from one of aluminum nitride and aluminum oxide or a combination of the above.

Referring again to Figure 1 and Figures 2A and 2B, Figure 2A is a top view of the substrate structure of an embodiment of the present invention, and Figure 2B is a bottom view of the package structure of the embodiment of the present invention, as shown in the figure. In this embodiment, an ultraviolet light emitting diode 12 is arranged above the substrate 10, and a gold bonding layer 14 is arranged around the outer edge of the ultraviolet light emitting diode 12. The gold bonding layer 14 is obtained through a sintering process (Sintering process) or yellow light manufacturing process (Yellow light manufacturing process) to be fixed on the substrate 10, the gold bonding layer 14 is selected from gold (Au) and electroless nickel immersion gold (ENIG, Electroless nickel immersion gold) One or a combination of the above, the quartz package 20 is provided with a silver bonding layer 22 corresponding to the gold bonding layer 14, and the silver bonding layer 22 is fixed to the quartz package through a sintering process Below the component 20, the quartz package 20 is fixedly connected to the gold adhesive layer 14 and the silver adhesive layer 22 through a flux 24, so that an air layer 28 is provided between the quartz package 20 and the substrate 10. In this embodiment, the quartz package 20 is provided with a groove 28 corresponding to one side of the ultraviolet light emitting diode 12 to disperse the light of the ultraviolet light emitting diode 12 so that the light is evenly distributed; in this embodiment There is a first distance H1 from one side of the groove 28 of the quartz package 20 to the top of the quartz package 20, and the quartz package 20 includes the gold bonding layer 14, the silver bonding layer 22, and the auxiliary The solder 24 has a second distance H2 as a whole, and the first distance H1 is greater than one-half of the second distance H2.

Following the above, in this embodiment, the material of the quartz package 20 is a transparent piece of quartz that allows light to pass through, the flux 24 is made of solder paste, and the air layer 26 can be Prevent the quartz package 20 from colliding with the ultraviolet light emitting diode 12 during the packaging process, causing it to be damaged.

Following the above, in this embodiment, the air layer 26 of the quartz package 20 has a first width W1, and the ultraviolet light emitting diode 12 has a second width W2, in which half of the first width W1 A greater than or equal to the second width W2 prevents the area of the ultraviolet light emitting diode 12 from being too large, affecting the light emission of the wide-angle ultraviolet light emitting diode 1 and affecting the light extraction efficiency.

Following the above, as shown in Figure 2, in this embodiment, the quartz package 20 further includes a reflective portion 29, which is disposed on the outer side of one of the grooves 28, and concentric circles envelop the grooves. Groove 28, the reflective portion 29 can be an aluminum reflective layer or a dielectric material. The refractive index of the reflective portion 28 is gradually increased from the inner edge to the outer edge due to the characteristics of the material, for example, a low refractive index material With a high refractive index material, the reflective portion 29 near the groove 28 is set with a low refractive index material, and the reflective portion 29 far away from the groove 28 is set with a high refractive index material, so that the light of the ultraviolet light emitting diode 12 It can evenly distribute, improve the light output efficiency and control the light angle.

； 於另一實施例中，該反射部29之堆疊方式滿足 式(二)：

； 於再一實施例中，該反射部29之堆疊方式滿足 式(三)：

。 Following the above, in this embodiment, when the reflective portion 29 is a dielectric material, it includes two low-refractive-index materials, two high-refractive-index materials, and an aluminum material. In this embodiment, the first low-refractive-index material is defined as L ₁ , The second low refractive index material is L ₂ , the first high refractive index material is H ₁ , the second high refractive index material is H ₂ , the substrate is S, the aluminum material is Al, the air layer 26 is Air, and The power of the film stack is defined as m. In one embodiment, the stacking method of the reflecting part 29 satisfies the formula (1):

; In another embodiment, the stacking manner of the reflecting portion 29 satisfies formula (2):

; In another embodiment, the stacking manner of the reflecting portion 29 satisfies formula (3):

.

Following the above, in this embodiment, the refractive index of the first low refractive index material is smaller than the refractive index of the substrate 10, the refractive index of the second low refractive index material is smaller than the refractive index of the substrate 10, and the first high refractive index material The refractive index of the high refractive index material is greater than the refractive index of the substrate 10, and the refractive index of the second high refractive index material is greater than the refractive index of the substrate 10.

Please refer to Figure 3, which is a schematic diagram of the light path of the embodiment of the present invention. As shown in the figure, in this embodiment, the ultraviolet light emitting diode 12 emits a first light L1 and a second light L2. For example, the angle of the second light L2 is greater than that of the first light L1 to indicate the light emitted by the ultraviolet light emitting diode 12. When the first light L1 hits the groove 28, it is because the quartz package 20 The shape of the groove 28 makes the first light L1 evenly distributed and emitted out of the quartz package 20, and when the second light L2 is emitted to the groove 28, because the groove 28 of the quartz package 20 is The shape deflects the path of the second light L2 so that it is totally reflected in the quartz package 20 and emitted from both sides of the quartz package 20; the groove 28 of the quartz package 20 in this embodiment can be Evenly disperse the first light L1 and the second light L2, eliminating the reflective layer or the light scattering layer of the conventional package structure, so as to reduce the volume of the whole package.

Please refer to FIG. 4, which is a schematic diagram of the structural distance of the embodiment of the present invention. As shown in the figure, in this embodiment, there is a third distance from one side of the groove 28 to the top of the quartz package 20 H3, the third distance H3 is less than the first distance H1, and the first distance H1 is greater than one-half of the second distance H2, and the first, second, and third distances H1, H2, and H3 are used to adjust the recess. Astigmatism path of slot 28.

This embodiment is a packaging structure of a wide-angle ultraviolet light-emitting diode. The ultraviolet light-emitting diode 12 is arranged above the substrate 10, and the gold bonding layer 14 is arranged around the ultraviolet light-emitting diode 12, and The silver adhesive layer 22 is disposed under the quartz package 20, and then the gold adhesive layer 14 and the silver adhesive layer 22 are fixed to each other with the flux 24 to complete the package, and the quartz package 20 corresponds to ultraviolet light The groove 28 is provided on one side of the diode 12 for evenly distributing the first and second rays L1 and L2 of the ultraviolet light emitting diode 12.

In summary, the present invention provides a packaging structure for ultraviolet light emitting diodes. The ultraviolet light emitting diode is arranged above the substrate, and the gold bonding layer is arranged around the ultraviolet light emitting diode, and the silver is arranged under the quartz package. Then, the gold bonding layer and the silver bonding layer are fixed to each other with a flux (such as solder paste). The present invention uses a quartz package corresponding to the groove provided on one side of the ultraviolet light emitting diode to uniformly distribute the ultraviolet light emitting diode The light emitted by the body uses the groove structure to avoid the setting of the reflective layer or the light scattering layer, reduces the volume and thickness of the overall package, and uses a bonding layer containing gold and silver materials to avoid the problem of aging of the bonding layer by ultraviolet radiation .

Therefore, the present invention is really novel, progressive, and available for industrial use. It should meet the patent application requirements of China's patent law. Undoubtedly, I filed an invention patent application in accordance with the law. I pray that the Bureau will grant the patent as soon as possible.

However, the foregoing is only an embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. Therefore, all the equivalent changes and modifications of the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention are mentioned. All should be included in the scope of the patent application of the present invention.

1: Packaging structure of wide-angle ultraviolet light emitting diode 10: substrate 12: Ultraviolet light emitting diode 14: Gold bonding layer 20: Quartz package 22: Silver adhesive layer 24: Flux 26: Air layer 28: Groove 29: reflection part L1: First light L2: second light H1: first distance H2: second distance H3: third distance W1: first width W2: second width

Figure 1: It is a schematic diagram of the structure of an embodiment of the present invention; Figure 2A: It is a top view of the substrate structure of the embodiment of the present invention; Figure 2B: It is a bottom view of the package structure of the embodiment of the present invention; Figure 3: It is a schematic diagram of the light path of the embodiment of the present invention; and Figure 4: It is a schematic diagram of the structural distance of the embodiment of the present invention.

1: Packaging structure of wide-angle ultraviolet light emitting diode

10: substrate

12: Ultraviolet light emitting diode

14: Gold bonding layer

20: Quartz package

22: Silver adhesive layer

24: Flux

26: Air layer

28: Groove

H1: first distance

H2: second distance

W1: first width

W2: second width

Claims (8)

A packaging structure of a wide-angle ultraviolet light emitting diode, comprising: a substrate on which an ultraviolet light emitting diode is arranged, and a gold bonding layer is arranged around the ultraviolet light emitting diode, and the gold bonding layer is It is fixed on the substrate through a sintering process or a yellowing process. The material of the substrate is selected from one of aluminum nitride and aluminum oxide or a combination of the above, and the gold bonding layer is selected from gold and One or a combination of nickel and gold; and a quartz package in which a silver bonding layer is provided corresponding to the gold bonding layer under the quartz package, and the silver bonding layer is fixed to the gold bonding layer through a sintering process Below the quartz package, the quartz package is fixedly connected to the gold bonding layer and the silver bonding layer through a flux, so that an air layer is arranged between the quartz package and the substrate, and the quartz package A groove is provided on one side of the ultraviolet light emitting diode, and a first distance between one side of the groove of the quartz package and the top of the quartz package is greater than or equal to a second of the quartz package One-half of the distance, one-half of a first width of the air layer of the quartz package is greater than or equal to a second width of the ultraviolet light-emitting diode; wherein, one side of the groove is to the quartz A third distance of the top of the package is smaller than the first distance. A packaging structure of a wide-angle ultraviolet light emitting diode, comprising: a substrate on which an ultraviolet light emitting diode is arranged, and a gold bonding layer is arranged around the ultraviolet light emitting diode, and the gold bonding layer is It is fixed on the substrate through a sintering process or a yellowing process. The material of the substrate is selected from one of aluminum nitride and aluminum oxide or a combination of the above, and the gold bonding layer is selected from gold and One of or a combination of the above; and A quartz package, a silver bonding layer is provided under the quartz package corresponding to the gold bonding layer, the silver bonding layer is fixed under the quartz package through a sintering process, and the quartz package is transparent The solder is used to fix the gold adhesive layer and the silver adhesive layer, so that an air layer is arranged between the quartz package and the substrate, and an air layer is arranged on the side of the quartz package corresponding to the ultraviolet light emitting diode. A groove, a first distance from one side of the groove of the quartz package to the top of the quartz package is greater than or equal to one-half of a second distance of the quartz package, the quartz package One-half of a first width of the air layer is greater than or equal to a second width of the ultraviolet light-emitting diode, and the quartz package includes a reflective part disposed on the outside of one of the grooves. The packaging structure of the wide-angle ultraviolet light emitting diode according to claim 1 or 2, wherein the flux is solder paste. The package structure of the wide-angle ultraviolet light emitting diode according to claim 1 or 2, wherein the material of the quartz package includes quartz. The packaging structure of a wide-angle ultraviolet light emitting diode according to claim 2, wherein the reflective portion can be an aluminum reflective layer. The packaging structure of the wide-angle ultraviolet light emitting diode according to claim 2, wherein the reflective part can be a dielectric material, and the stacking method satisfies S/L ₁ (H ₁ L ₁ ) ^m /Air. The packaging structure of the wide-angle ultraviolet light emitting diode according to claim 2, wherein the reflective part can be a dielectric material, and the stacking method satisfies S/(H ₁ L ₁ ) ^m (H ₂ L ₂ ) ^m /Air . The packaging structure of the wide-angle ultraviolet light emitting diode according to claim 2, wherein the reflective part can be a dielectric material, and the stacking method satisfies S/(L ₁ H ₁ ) ^m /Al/Air.

Images