TWI741077B - Method for producing paraffin - Google Patents
Method for producing paraffin Download PDFInfo
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- TWI741077B TWI741077B TW106140683A TW106140683A TWI741077B TW I741077 B TWI741077 B TW I741077B TW 106140683 A TW106140683 A TW 106140683A TW 106140683 A TW106140683 A TW 106140683A TW I741077 B TWI741077 B TW I741077B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/44—Palladium
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C5/00—Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms
- C07C5/02—Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms by hydrogenation
- C07C5/03—Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms by hydrogenation of non-aromatic carbon-to-carbon double bonds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C9/00—Aliphatic saturated hydrocarbons
- C07C9/02—Aliphatic saturated hydrocarbons with one to four carbon atoms
- C07C9/06—Ethane
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C9/00—Aliphatic saturated hydrocarbons
- C07C9/02—Aliphatic saturated hydrocarbons with one to four carbon atoms
- C07C9/08—Propane
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
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Abstract
本發明提供一種能夠由可容易獲取之高純度烯烴,於抑制副反應並且雜質生成量不產生偏差之狀況下,穩定地高效地製造高純度之石蠟的方法。 本發明係將不具有觸媒活性之複數個粒狀構件填充至反應塔10,將上述粒狀構件之中之至少一部分設為擔載有觸媒之載體,於上述反應塔10中於上述觸媒之存在下藉由氣相狀態之烯烴與氫氣之反應而製造石蠟。將上述載體各者所擔載之上述觸媒之重量相對於上述載體各者之重量與上述載體各者所擔載之上述觸媒之重量之和的比率設為0.001%以上且未達0.01%。The present invention provides a method that can produce high-purity paraffin wax stably and efficiently from easily obtainable high-purity olefins under the condition that side reactions are suppressed and the amount of impurity produced does not vary. In the present invention, a plurality of granular members without catalyst activity are filled in the reaction tower 10, at least a part of the granular members is set as a carrier carrying a catalyst, and the catalyst is placed in the reaction tower 10 In the presence of medium, paraffin wax is produced by the reaction of olefin and hydrogen in the gas phase. The ratio of the weight of the catalyst carried by each of the above-mentioned carriers relative to the weight of each of the above-mentioned carriers and the weight of the above-mentioned catalyst carried by each of the above-mentioned carriers is set to 0.001% or more and less than 0.01% .
Description
本發明係關於一種於觸媒之存在下藉由對烯烴之氫化反應而製造高純度之石蠟的方法。The present invention relates to a method for producing high-purity paraffin wax by hydrogenation of olefins in the presence of a catalyst.
近年來,越來越需要高純度乙烷、高純度丙烷等高純度石蠟。例如,關於作為高耐壓碳化矽(SiC)半導體之原料之高純度丙烷,為了實現碳化矽之高耐壓性,要求將含有之雜質各者之濃度設為未達1.0 vol ppm。 作為高純度石蠟之製造方法,已知有對低純度石蠟進行蒸餾精製之方法。然而,於該方法中,用以將雜質分離之蒸餾設備規模大而投資額變大。又,因設備規模大,故運轉需要巨大之能量。尤其,於對以雜質之形式包含丙烯之低純度丙烷進行蒸餾之情形時,因丙烷與丙烯之沸點差較小,故利用蒸餾進行精製較為困難。 又,已知有於觸媒之存在下藉由對液相丙烯之氫化反應而製造丙烷之方法(專利文獻1)。然而,於原料之丙烯為液相之情形時,若原料濃度變高,則反應熱變大,而除熱變得困難,因過度之溫度上升,導致丙烯被分解而成為雜質,從而使雜質濃度變高。因此,為了藉由對液相原料之氫化反應而製造高純度之石蠟,必須使原料濃度為25%左右以下,因此,高效地製造高純度之石蠟較為困難。 因此,提出了藉由對氣相狀態之烯烴之氫化反應而製造石蠟之方法(專利文獻2)。此時,將載體所擔載之觸媒及不具有觸媒活性之氧化鋁球等填充至反應塔,將由觸媒之存在下之氫化反應產生之反應熱藉由向氧化鋁球等之解吸或傳熱等去除。藉此,防止因過度之溫度上升引起之烯烴之分解,而使雜質濃度降低。進而,隨著朝向反應塔中之氣流之下游,使氧化鋁球等減少,而使觸媒之比率增加。藉此,使烯烴與氫氣確實地反應,而防止未反應之烯烴混入至石蠟,從而使雜質濃度降低。 [先前技術文獻] [專利文獻] [專利文獻1]美國專利第3509226號說明書 [專利文獻2]日本專利特開2014-84285號公報In recent years, there has been an increasing need for high-purity paraffin waxes such as high-purity ethane and high-purity propane. For example, with regard to high-purity propane as a raw material for high-voltage silicon carbide (SiC) semiconductors, in order to achieve the high-voltage resistance of silicon carbide, the concentration of each of the impurities contained in it is required to be less than 1.0 vol ppm. As a method for producing high-purity paraffin wax, a method of distilling and refining low-purity paraffin wax is known. However, in this method, the scale of the distillation equipment for separating impurities is large and the investment amount becomes large. In addition, due to the large scale of the equipment, a huge amount of energy is required for operation. In particular, when distilling low-purity propane containing propylene as an impurity, since the boiling point difference between propane and propylene is small, purification by distillation is difficult. In addition, a method for producing propane by hydrogenation of liquid-phase propylene in the presence of a catalyst is known (Patent Document 1). However, when the raw material propylene is in the liquid phase, if the raw material concentration becomes higher, the heat of reaction becomes larger and heat removal becomes difficult. Due to the excessive temperature rise, the propylene is decomposed and becomes an impurity, thereby increasing the impurity concentration. Becomes high. Therefore, in order to produce high-purity paraffin wax by hydrogenation of liquid-phase raw materials, the raw material concentration must be about 25% or less. Therefore, it is difficult to efficiently produce high-purity paraffin wax. Therefore, a method for producing paraffin wax by hydrogenation of olefins in a gaseous state has been proposed (Patent Document 2). At this time, the catalyst supported by the carrier and alumina balls without catalyst activity are filled into the reaction tower, and the reaction heat generated by the hydrogenation reaction in the presence of the catalyst is desorbed or desorbed to the alumina balls, etc. Heat transfer and other removal. This prevents the decomposition of olefins caused by excessive temperature rise and reduces the concentration of impurities. Furthermore, as it goes to the downstream of the gas flow in the reaction tower, the alumina balls etc. decrease, and the ratio of the catalyst increases. Thereby, the olefin and the hydrogen are surely reacted, and the unreacted olefin is prevented from being mixed into the paraffin, thereby reducing the impurity concentration. [Prior Art Document] [Patent Document] [Patent Document 1] Specification of U.S. Patent No. 3509226 [Patent Document 2] Japanese Patent Laid-Open No. 2014-84285
[發明所欲解決之問題] 根據專利文獻2中記載之方法,將氣相之烯烴作為原料,因此,與使用液相之原料之情形相比,即便提高原料濃度,反應熱之去除亦較為容易。然而,雜質生成量存在偏差,而存在無法穩定地高效地製造高純度之石蠟之問題。 本發明之目的在於解決藉由氣相狀態之烯烴與氫氣之反應而製造石蠟之方法中之上述先前技術之問題。 [解決問題之技術手段] 本發明係將不具有觸媒活性之複數個粒狀構件填充至反應塔,將上述粒狀構件之中之至少一部分設為擔載有觸媒之載體,於上述反應塔中於上述觸媒之存在下藉由氣相狀態之烯烴與氫氣之反應而製造石蠟之方法,其特徵在於:將全部上述載體所擔載之上述觸媒之總重量相對於包含上述載體之全部上述粒狀構件之總重量與全部上述載體所擔載之上述觸媒之總重量之和的比率設為0.001%以上且未達0.01%,且將上述載體各者所擔載之上述觸媒之重量相對於上述載體各者之重量與上述載體各者所擔載之上述觸媒之重量之和的比率設為0.001%以上且未達0.01%。 本發明基於以下之見解。 於專利文獻2中記載之先前技術中,於反應活躍之氣流之上游區域,將氧化鋁球等與擔載有觸媒之載體進行混合,將氧化鋁球等之體積相對於氧化鋁球等之體積與擔載有觸媒之全部載體之體積之和的比率設為90~99%。如此於不具有觸媒活性之氧化鋁球等之比率較高之情形時,於反應塔中,觸媒偏集存在,又,亦無混合狀態之再現性。進而,於專利文獻2中,載體各者所擔載之觸媒之重量相對於載體各者之重量與載體各者所擔載之觸媒之重量之和的比率係設為0.1~1.0%。因此,於觸媒偏集存在之位置,反應熱增多,因由局部發熱引起之過度之溫度上升,導致烯烴被分解而成為雜質。藉此,於先前技術中,雜質生成量產生偏差,而無法穩定地高效地製造高純度之石蠟。 相對於此,根據本發明,將載體各者所擔載之觸媒之重量相對於載體各者之重量與載體各者所擔載之觸媒之重量之和的比率設為小於上述先前技術中之該比率之未達0.01%,藉此,能夠減少反應熱而能夠防止因局部發熱引起之過度之溫度上升,而能夠抑制因烯烴之分解引起之雜質生成,從而能夠防止雜質生成量產生偏差。又,無需未設為載體之粒狀構件或者能夠縮小混合比率,因此,能夠防止雜質生成量產生偏差。藉由將載體各者所擔載之觸媒之重量相對於載體各者之重量與載體各者所擔載之觸媒之重量之和的比率設為0.001%以上,而能夠使對烯烴之氫化反應確實地發生,從而能夠確實地防止未反應之烯烴以雜質之形式混入至所製造之石蠟。 藉由將全部上述粒狀構件設為擔載有上述觸媒之上述載體,而能夠使對烯烴之氫化反應更確實地發生,從而能夠防止未反應之烯烴以雜質之形式混入至所製造之石蠟,又,能夠使反應塔中之觸媒之分佈均勻化,而能夠確實地防止雜質生成量產生偏差。 於本發明中,較佳為不將全部填充至上述反應塔之不具有觸媒活性之上述粒狀構件設為擔載有上述觸媒之上述載體,而將上述粒狀構件之中之一部分設為擔載有上述觸媒之上述載體,並與剩餘之未擔載上述觸媒之上述粒狀構件進行混合。 藉此,於上述載體各者所擔載之上述觸媒之重量相對於上述載體各者之重量與上述載體各者所擔載之上述觸媒之重量之和的比率成為0.001%以上且未達0.01%之本發明中,於不僅擔載有觸媒之載體被填充至反應塔,且未被設為載體而未擔載觸媒之粒狀構件亦被填充至反應塔之情形時,亦能夠確保觸媒量而使對烯烴之氫化反應確實地發生,從而能夠防止未反應之烯烴以雜質之形式混入至所製造之石蠟。 上述烯烴及石蠟較佳為各者碳數為2~4。即,較佳為分別藉由對丙烯(C3
H6
)之氫化反應而製造丙烷(C3
H8
),藉由對乙烯(C2
H4
)之氫化反應而製造乙烷(C2
H6
),藉由對正丁烯或異丁烯(C4
H8
)之氫化反應而製造丁烷(C4
H10
)。 較佳為,上述觸媒包含鈀,上述載體為氧化鋁。 上述石蠟之純度較佳為99.99 vol%以上,更佳為99.999 vol%以上。 [發明之效果] 根據本發明,可提供一種能夠由可容易獲取之高純度烯烴,於抑制副反應並且雜質生成量不產生偏差之狀況下,穩定地高效地製造高純度之石蠟的方法。[Problem to be solved by the invention] According to the method described in
圖1所示之石蠟製造裝置1自烯烴氣體料缸2以氣相狀態之烯烴之形式供給乙烯、丙烯、正丁烯或異丁烯等。該供給之烯烴藉由第1減壓閥3被減壓,藉由附流量計之第1流量控制閥4被設為設定流量,並被導入至氣體混合器5。又,石蠟製造裝置1自氫氣料缸6供給氣相狀態之氫氣。該供給之氫氣藉由第2減壓閥7被減壓,藉由附流量計之第2流量控制閥8被設為設定流量,並被導入至氣體混合器5。於氣體混合器5中經混合之烯烴與氫氣被作為原料自上部入口10a導入至筒狀之反應塔10。 為了防止所製造之石蠟之純度下降,作為原料之烯烴之純度較佳為99.99 vol%以上。 對烯烴之氫化反應係反應向莫耳數減少之方向進展之還原反應,因此,藉由向反應塔10供給多於理論當量之氫氣,能夠使反應速度上升。又,若向反應塔10供給之氫氣之量相對於烯烴之供給量低於1.00倍莫耳,則作為原料之烯烴會殘留,若超過2.00倍莫耳,則後續步驟中之氫氣之去除變得麻煩。由此,氫氣之供給量較佳為相對於烯烴之供給量為1.00~2.00倍莫耳,更佳為1.05~1.20倍莫耳。又,為了防止所製造之石蠟之純度下降,作為原料之氫氣之純度較佳為99 vol%以上,更佳為99.9 vol%以上。 於反應塔10填充有複數個粒狀構件。於本實施形態中,將填充至反應塔10之全部粒狀構件設為擔載有觸媒之載體。 作為觸媒,可使用公知之還原觸媒,例如可使用鈀、鉑、銠、釕、鎳等金屬觸媒,於本實施形態中係設為鈀。載體只要為能夠擔載觸媒之不具有觸媒活性者,則材質並無限定,於本實施形態中係設為氧化鋁。載體之形狀於本實施形態中係設為球形,但並無特別限定,例如亦可為圓柱狀、顆粒狀等,尺寸於本實施形態中係設為平均粒徑3 mm,但亦並無特別限定。再者,載體亦可擔載2種以上之觸媒。 反應塔10中之載體各者所擔載之觸媒之重量相對於載體各者之重量與載體各者所擔載之觸媒之重量之和的比率係設為0.001%以上且未達0.01%。即,將載體各者之重量設為ws,將載體各者所擔載之觸媒之重量設為wc,並設為0.001≦wc×100/(ws+wc)<0.01。 又,填充至反應塔10之全部粒狀構件係設為擔載有觸媒之載體,因此,全部載體所擔載之觸媒之總重量相對於包含反應塔10中之載體之全部粒狀構件之總重量與全部載體所擔載之觸媒之總重量之和的比率係設為0.001%以上且未達0.01%。 於反應塔10中於觸媒之存在下藉由氣相狀態之烯烴與氫氣之反應,生成氣相狀態之乙烷、丙烷、或丁烷等作為石蠟。為了控制反應塔10之內部溫度,反應塔10被冷卻套11覆蓋,並設置對冷卻套11內之冷媒進行抽吸、冷卻使其回流之冷卻裝置12,反應塔10之內部溫度係由溫度計13測定。反應塔10之內部溫度係為了反應速度控制不會變得困難而設為石蠟不會液化之溫度,又,係設為不會因石蠟之分解引起雜質增加之溫度。例如於製造丙烷作為石蠟之情形時,反應塔10之內部溫度較佳為設為-42~250℃,更佳為設為0~250℃。 藉由反應塔10中之對烯烴之氫化反應而生成之石蠟係自反應塔10之下部出口10b被排出,並經由用以調節反應塔10之內部壓力之背壓閥14而被導入至製品槽15,反應塔10之內部壓力係由壓力計16測定。反應塔10之內部壓力若變得過高,則會促進氫化反應,但有無法控制反應熱而導致雜質增加之虞,又,有反應氣體液化而成為液相反應之虞,因此,較佳為適當進行控制。例如於製造丙烷作為石蠟之情形時,反應塔10之內部壓力通常較佳為設為0.0~0.5 MPaG,更佳為設為0.1~0.5 MPaG。 還原反應時之氣體流速或空間速度越小,則越可獲得較佳之結果。例如於製造丙烷作為石蠟之情形時,標準狀態氣體量下之空間速度SV較佳為設為1000/h以下,更佳為設為500/h以下。藉由空間速度成為1000/h以下,而能夠於氫化反應不會變得不充分之狀況下防止未反應之原料殘留。 為了對藉由氫化反應而生成之石蠟中包含之雜質進行分析,自反應塔10之出口10b排出之氣體之一部分被導入至氣體層析儀17。 於本實施形態中,為了自藉由烯烴與氫氣之反應而生成之石蠟將氫氣分離,設置用以將被導入至製品槽15之氣相之石蠟冷卻而使之液化之冷卻裝置18。冷卻裝置18之冷卻溫度係設為低於石蠟之沸點且高於氫氣之沸點。以雜質之形式包含於石蠟中之氫氣不液化,而自製品槽15經由附流量計之第3流量控制閥19排出,從而自石蠟分離,藉此,能夠提高石蠟之純度。於本實施形態中,石蠟中包含之氫氣之濃度係設為未達1.0 vol ppm。亦可對自石蠟分離之氫氣進行回收,使其返回至反應塔10,藉此,作為原料進行再利用。 [實施例] [實施例1] 使用上述實施形態之石蠟製造裝置1,藉由對丙烯之氫化反應而製造丙烷。 反應塔10係設為不鏽鋼製且內徑31 mm。將反應塔10中之粒狀構件之填充高度設為50 cm。將填充至反應塔10之全部粒狀構件設為擔載觸媒之載體。即,將擔載有觸媒之全部載體之體積與不擔載觸媒之全部粒狀構件之體積之和相對於擔載有觸媒之全部載體之體積之比率設為1倍。作為擔載有觸媒之載體,使用平均粒徑3 mm之N.E.CHEMCAT(股)製造者。本實施例之各載體係α氧化鋁製,且擔載有鈀(Pd)作為觸媒。將載體各者所擔載之觸媒之重量相對於載體各者之重量與載體各者所擔載之觸媒之重量之和的比率(以下,將該比率稱為載體擔載觸媒之「擔載率」)設為0.001%。 自烯烴氣體料缸2供給純度超過99.99 vol%之丙烯,以1.0 L/min之流量導入至氣體混合器5,自氫氣料缸6供給純度超過99.999 vol%之氫氣,以1.1 L/min之流量導入至氣體混合器5。將丙烯及氫氣於混合器5中於室溫下進行混合之後,導入至反應塔10。此時,反應塔10之內部壓力係設為0.3 MPaG,使作為冷媒之溫度40℃之水於冷卻套11中循環。 於上述條件下於反應塔10中藉由對丙烯之氫化反應,於反應塔10內之距入口10a為7 cm之位置顯示出最大發熱溫度230℃。 利用島津製作所(股)製造之氣體層析儀17對自反應塔10之出口10b排出之丙烷氣體中包含之雜質進行分析後,氫氣以外之雜質為殘留丙烯<0.1 vol ppm、甲烷0.3 vol ppm、乙烷0.5 vol ppm、丁烷0.6 vol ppm。 [比較例1] 將載體擔載觸媒之擔載率設為0.0005%,除此以外,於與實施例1相同之條件下,藉由對丙烯之氫化反應而製造丙烷。 藉由上述條件下之反應塔10中之對丙烯之氫化反應,於反應塔10內之距入口10a為10 cm之位置顯示出最大發熱溫度220℃。 利用島津製作所(股)製造之氣體層析儀17對自反應塔10之出口10b排出之丙烷氣體中包含之雜質進行分析後,氫氣以外之雜質為殘留丙烯1.3 vol ppm、甲烷0.2 vol ppm、乙烷0.3 vol ppm、丁烷<0.1 vol ppm。 [比較例2] 將載體擔載觸媒之擔載率設為0.0005%,將反應塔10之高度設為實施例1之2倍,將擔載有觸媒之載體之反應塔10中之填充高度設為實施例1之2倍。除此以外,於與實施例1相同之條件下,藉由對丙烯之氫化反應而製造丙烷。 藉由上述條件下之反應塔10中之對丙烯之氫化反應,於反應塔10內之距入口10a為9 cm之位置顯示出最大發熱溫度220℃。 利用島津製作所(股)製造之氣體層析儀17對自反應塔10之出口10b排出之丙烷氣體中包含之雜質進行分析後,氫氣以外之雜質為殘留丙烯1.2 vol ppm、甲烷0.1 vol ppm、乙烷0.3 vol ppm、丁烷<0.1 vol ppm。 [比較例3] 將載體擔載觸媒之擔載率設為0.01%,將各載體設為γ氧化鋁製。除此以外,於與實施例1相同之條件下,藉由對丙烯之氫化反應而製造丙烷。 藉由上述條件下之反應塔10中之對丙烯之氫化反應,於反應塔10內之距入口10a為7 cm之位置顯示出最大發熱溫度240℃。 利用島津製作所(股)製造之氣體層析儀17對自反應塔10之出口10b排出之丙烷氣體中包含之雜質進行分析後,氫氣以外之雜質為殘留丙烯<0.1 vol ppm、甲烷1.0 vol ppm、乙烷0.9 vol ppm、丁烷1.0 vol ppm。 [比較例4] 將載體擔載觸媒之擔載率設為0.5%,將各載體設為γ氧化鋁製。除此以外,於與實施例1相同之條件下,藉由對丙烯之氫化反應而製造丙烷。 藉由上述條件下之反應塔10中之對丙烯之氫化反應,於反應塔10內之距入口10a為4 cm之位置顯示出最大發熱溫度400℃。 利用島津製作所(股)製造之氣體層析儀17對自反應塔10之出口10b排出之丙烷氣體中包含之雜質進行分析後,氫氣以外之雜質為殘留丙烯<0.1 vol ppm、甲烷<0.1 vol ppm、乙烷1.6 vol%、丁烷1900 vol ppm。 [比較例5] 將填充至反應塔10之粒狀構件之中之一部分設為擔載有觸媒之載體。作為載體,使用材質為γ氧化鋁、平均粒徑3 mm之N.E.CHEMCAT(股)製造者。剩餘之不擔載觸媒之粒狀構件係設為平均粒徑3 mm之AS ONE(股)製造之氧化鋁球。將載體擔載觸媒之擔載率設為0.5%。將擔載有觸媒之全部載體之體積與不擔載觸媒之全部粒狀構件之體積之和相對於擔載有觸媒之全部載體之體積之比率設為500倍。將擔載有觸媒之載體與不擔載觸媒之粒狀構件進行混合,以高度方向尺寸成為50 cm之方式填充至反應塔10。除此以外,於與實施例1相同之條件下,藉由對丙烯之氫化反應而製造丙烷。 藉由上述條件下之反應塔10中之對丙烯之氫化反應,於反應塔10內之距入口10a為5 cm之位置顯示出最大發熱溫度50℃。 利用島津製作所(股)製造之氣體層析儀17對自反應塔10之出口10b排出之丙烷氣體中包含之雜質進行分析後,氫氣以外之雜質為殘留丙烯30 vol%、甲烷1.3 vol ppm、乙烷0.4 vol ppm、丁烷0.5 vol ppm。 以下之表1表示實施例1及比較例1~5中之分析結果。 [表1]
1‧‧‧石蠟製造裝置2‧‧‧烯烴氣體料缸3‧‧‧第1減壓閥4‧‧‧第1流量控制閥5‧‧‧氣體混合器6‧‧‧氫氣料缸7‧‧‧第2減壓閥8‧‧‧第2流量控制閥10‧‧‧反應塔10a‧‧‧上部入口10b‧‧‧下部出口11‧‧‧冷卻套12‧‧‧冷卻裝置13‧‧‧溫度計14‧‧‧背壓閥15‧‧‧製品槽16‧‧‧壓力計17‧‧‧氣體層析儀18‧‧‧冷卻裝置19‧‧‧第3流量控制閥1‧‧‧Paraffin manufacturing equipment2‧‧‧Olefin
圖1係本發明之實施形態中之石蠟製造裝置之構成說明圖。Fig. 1 is an explanatory diagram of the structure of the paraffin wax manufacturing apparatus in the embodiment of the present invention.
1‧‧‧石蠟製造裝置 1‧‧‧Paraffin wax manufacturing device
2‧‧‧烯烴氣體料缸 2‧‧‧Olefin gas cylinder
3‧‧‧第1減壓閥 3‧‧‧The first pressure reducing valve
4‧‧‧第1流量控制閥 4‧‧‧The first flow control valve
5‧‧‧氣體混合器 5‧‧‧Gas mixer
6‧‧‧氫氣料缸 6‧‧‧Hydrogen tank
7‧‧‧第2減壓閥 7‧‧‧The second pressure reducing valve
8‧‧‧第2流量控制閥 8‧‧‧Second flow control valve
10‧‧‧反應塔 10‧‧‧Reaction Tower
10a‧‧‧上部入口 10a‧‧‧Upper entrance
10b‧‧‧下部出口 10b‧‧‧Lower exit
11‧‧‧冷卻套 11‧‧‧Cooling Jacket
12‧‧‧冷卻裝置 12‧‧‧Cooling device
13‧‧‧溫度計 13‧‧‧Thermometer
14‧‧‧背壓閥 14‧‧‧Back pressure valve
15‧‧‧製品槽 15‧‧‧Product Slot
16‧‧‧壓力計 16‧‧‧Pressure gauge
17‧‧‧氣體層析儀 17‧‧‧Gas Chromatograph
18‧‧‧冷卻裝置 18‧‧‧Cooling device
19‧‧‧第3流量控制閥 19‧‧‧The third flow control valve
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CN109843835A (en) | 2019-06-04 |
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