TWI736940B - Film thickness measuring system and film thickness measuring method - Google Patents
Film thickness measuring system and film thickness measuring method Download PDFInfo
- Publication number
- TWI736940B TWI736940B TW108125590A TW108125590A TWI736940B TW I736940 B TWI736940 B TW I736940B TW 108125590 A TW108125590 A TW 108125590A TW 108125590 A TW108125590 A TW 108125590A TW I736940 B TWI736940 B TW I736940B
- Authority
- TW
- Taiwan
- Prior art keywords
- distance
- measuring device
- distance measuring
- wafer structure
- chamber
- Prior art date
Links
Images
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明是有關於一種半導體製程系統及半導體製程方法,且特別是有關於一種膜厚量測系統及膜厚量測方法。The present invention relates to a semiconductor manufacturing process system and a semiconductor manufacturing process method, and particularly relates to a film thickness measurement system and a film thickness measurement method.
目前光學量測薄膜的方式無法適用在金屬層的量測。現行金屬層的膜厚量測方法是透過電性偵測金屬層的片電阻,再將片電阻進行換算而得到膜厚資料。然而,片電阻的量測方法本身是一種破壞性量測,因此一般都是用控片量測,並不能反映產品薄膜的真實厚度。The current optical measurement method cannot be applied to the measurement of the metal layer. The current method for measuring the film thickness of the metal layer is to detect the sheet resistance of the metal layer electrically, and then convert the sheet resistance to obtain the film thickness data. However, the measurement method of sheet resistance itself is a destructive measurement, so it is generally measured with a control sheet, which does not reflect the true thickness of the product film.
本發明提供一種膜厚量測系統及膜厚量測方法,其可藉由距離來量測晶圓結構的不透光層的厚度變動值,進而反映出產品薄膜的真實厚度。The present invention provides a film thickness measurement system and a film thickness measurement method, which can measure the thickness variation value of the opaque layer of a wafer structure by distance, thereby reflecting the true thickness of the product film.
本發明提出一種膜厚量測系統,包括製程機台、至少一個第一測距裝置與至少一個第二測距裝置。製程機台包括腔室與連接至腔室的傳輸路徑。第一測距裝置與第二測距裝置互相面對且設置在傳輸路徑上。在第一測距裝置與第二測距裝置之間具有量測區。The present invention provides a film thickness measurement system, which includes a process machine, at least one first distance measuring device and at least one second distance measuring device. The process tool includes a chamber and a transmission path connected to the chamber. The first distance measuring device and the second distance measuring device face each other and are arranged on the transmission path. There is a measuring area between the first distance measuring device and the second distance measuring device.
依照本發明的一實施例所述,在上述膜厚量測系統中,更可包括晶圓盒。傳輸路徑可位在晶圓盒與腔室之間。According to an embodiment of the present invention, the above-mentioned film thickness measurement system may further include a wafer cassette. The transfer path can be located between the wafer cassette and the chamber.
依照本發明的一實施例所述,在上述膜厚量測系統中,第一測距裝置與第二測距裝置例如是光學測距裝置。According to an embodiment of the present invention, in the above-mentioned film thickness measurement system, the first distance measurement device and the second distance measurement device are, for example, optical distance measurement devices.
依照本發明的一實施例所述,在上述膜厚量測系統中,光學測距裝置例如是雷射測距裝置。According to an embodiment of the present invention, in the above-mentioned film thickness measurement system, the optical distance measuring device is, for example, a laser distance measuring device.
本發明提出一種膜厚量測方法,包括以下步驟。提供製程機台。提供互相面對的至少一個第一測距裝置與至少一個第二測距裝置。獲得第一測距裝置與第二測距裝置之間的第一距離。在將晶圓結構送入製程機台的腔室之前,獲得晶圓結構的初始厚度。晶圓結構具有彼此相對的第一面與第二面。將晶圓結構送入製程機台的腔室中,且對晶圓結構的第一面進行製程處理。在將晶圓結構移出製程機台的腔室之後,使用第一測距裝置量測第一測距裝置與位在晶圓結構的第一面的不透光層之間的第二距離。在將晶圓結構移出製程機台的腔室之後,使用第二測距裝置量測第二測距裝置與晶圓結構的第二面之間的第三距離。將第一距離減去第二距離、第三距離與晶圓結構的初始厚度,而獲得不透光層的厚度變動值。The present invention provides a method for measuring film thickness, which includes the following steps. Provide process machines. At least one first distance measuring device and at least one second distance measuring device facing each other are provided. Obtain the first distance between the first distance measuring device and the second distance measuring device. Before the wafer structure is fed into the chamber of the process tool, the initial thickness of the wafer structure is obtained. The wafer structure has a first surface and a second surface opposite to each other. The wafer structure is fed into the chamber of the process tool, and the first side of the wafer structure is processed. After the wafer structure is moved out of the chamber of the process tool, the first distance measuring device is used to measure the second distance between the first distance measuring device and the opaque layer located on the first surface of the wafer structure. After the wafer structure is moved out of the chamber of the process tool, the second distance measuring device is used to measure the third distance between the second distance measuring device and the second surface of the wafer structure. The first distance is subtracted from the second distance, the third distance, and the initial thickness of the wafer structure to obtain the thickness variation value of the opaque layer.
依照本發明的一實施例所述,在上述膜厚量測方法中,製程處理例如是沉積製程、蝕刻製程、研磨製程或清洗製程。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the process treatment is, for example, a deposition process, an etching process, a polishing process, or a cleaning process.
依照本發明的一實施例所述,在上述膜厚量測方法中,當厚度變動值為正值,則厚度變動值表示不透光層的厚度增加值。當厚度變動值為負值,則厚度變動值表示不透光層的厚度減少值。當厚度變動值為0,則表示不透光層的厚度不變。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, when the thickness variation value is a positive value, the thickness variation value represents the increased value of the thickness of the opaque layer. When the thickness variation value is a negative value, the thickness variation value represents the thickness reduction value of the opaque layer. When the thickness variation value is 0, it means that the thickness of the opaque layer does not change.
依照本發明的一實施例所述,在上述膜厚量測方法中,第一距離的量測方法例如是使用第一測距裝置或第二測距裝置進行量測。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the first distance measurement method is, for example, using the first distance measuring device or the second distance measuring device for measurement.
依照本發明的一實施例所述,在上述膜厚量測方法中,晶圓結構的初始厚度的量測方法可包括以下步驟。使用第一測距裝置量測第一測距裝置與晶圓結構的第一面之間的第四距離。使用第二測距裝置量測第二測距裝置與晶圓結構的第二面之間的第五距離。將第一距離減去第四距離與第五距離,而獲得晶圓結構的初始厚度。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the measurement method of the initial thickness of the wafer structure may include the following steps. The first distance measuring device is used to measure the fourth distance between the first distance measuring device and the first surface of the wafer structure. The second distance measuring device is used to measure the fifth distance between the second distance measuring device and the second surface of the wafer structure. The first distance is subtracted from the fourth distance and the fifth distance to obtain the initial thickness of the wafer structure.
依照本發明的一實施例所述,在上述膜厚量測方法中,製程機台可包括腔室與連接至腔室的傳輸路徑。第一測距裝置與第二測距裝置可設置在傳輸路徑上。在第一測距裝置與第二測距裝置之間可具有量測區。第一距離、晶圓結構的初始厚度、第二距離與第三距離可在量測區中進行量測。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the process tool may include a chamber and a transmission path connected to the chamber. The first distance measuring device and the second distance measuring device may be arranged on the transmission path. There may be a measuring area between the first distance measuring device and the second distance measuring device. The first distance, the initial thickness of the wafer structure, the second distance, and the third distance can be measured in the measurement area.
基於上述,本發明所提出的膜厚量測系統與膜厚量測方法可藉由第一測距裝置與第二測距裝置來量測晶圓結構的不透光層的厚度變動值,進而反映出產品薄膜的真實厚度。另外,本發明所提出的膜厚量測系統與膜厚量測方法可即時性地對進出製程機台的每個晶圓結構進行膜厚量測。此外,在本發明所提出的膜厚量測方法中,藉由將第一距離減去第二距離、第三距離與晶圓結構的初始厚度,而獲得不透光層的厚度變動值,因此即使晶圓結構產生形變也不會影響量測結果。Based on the above, the film thickness measurement system and the film thickness measurement method proposed by the present invention can measure the thickness variation value of the opaque layer of the wafer structure through the first distance measuring device and the second distance measuring device, and then Reflect the true thickness of the product film. In addition, the film thickness measurement system and the film thickness measurement method proposed by the present invention can instantly measure the film thickness of each wafer structure entering and leaving the process tool. In addition, in the film thickness measurement method proposed by the present invention, the thickness variation value of the opaque layer is obtained by subtracting the second distance, the third distance, and the initial thickness of the wafer structure from the first distance. Even if the wafer structure is deformed, it will not affect the measurement results.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1A為本發明一實施例的膜厚量測系統的示意圖。圖1B為圖1A中的測距裝置的示意圖。圖1C為圖1A中的測距裝置的上視圖。FIG. 1A is a schematic diagram of a film thickness measurement system according to an embodiment of the invention. Fig. 1B is a schematic diagram of the distance measuring device in Fig. 1A. Fig. 1C is a top view of the distance measuring device in Fig. 1A.
請參照圖1A至圖1C,膜厚量測系統10包括製程機台100、至少一個測距裝置102與至少一個測距裝置104,且更可包括晶圓盒106。製程機台100包括腔室100a與連接至腔室100a的傳輸路徑100b。製程機台100可為沉積機台、蝕刻機台、研磨機台(如,化學機械研磨機台)或清洗機台,但本發明並不以此為限。此外,傳輸路徑100b可位在晶圓盒106與腔室100a之間。1A to 1C, the film
測距裝置102與測距裝置104互相面對且設置在傳輸路徑100b上。在測距裝置102與測距裝置104之間具有量測區R。晶圓結構W可在量測區R中進行膜厚量測。測距裝置102與測距裝置104所量測的資料可上傳遠端製程控制系統並計算出不透光層的膜厚變動值或者可由製程機台100收集上述資料並計算出不透光層的膜厚變動值。The distance measuring
測距裝置102與測距裝置104例如是光學測距裝置。光學測距裝置例如是雷射測距裝置。在測距裝置102與測距裝置104為光學測距裝置的實施例中,測距裝置102與測距裝置104分別可包括光源108a與光感測器108b(圖1B)。光源108a例如是雷射光源。光感測器108b例如是電荷耦合元件(charge coupled device,CCD)或互補式金屬氧化物半導體(complementary metal oxide semiconductor,CMOS)。光源108a可發射光至晶圓結構W的不透光層,且光感測器108b可接收從不透光層反射的光。The distance measuring
測距裝置102的數量與測距裝置104的數量可分別為一個或多個。此外,測距裝置102的數量與測距裝置104的數量可為相同。在本實施例中,如圖1A與圖1C所示,測距裝置102的數量與測距裝置104的數量是以多個為例來進行說明,但本發明並不以此為限。只要測距裝置102的數量與測距裝置104的數量為至少一個即屬於本發明所保護的範圍。在測距裝置102的數量與測距裝置104的數量為多個的情況下,可在晶圓結構W的多個位置上量測出不透光層的厚度變動值,藉此可得知不透光層的膜厚均勻性。The number of
基於上述實施例可知,膜厚量測系統10可藉由測距裝置102與測距裝置104來量測晶圓結構W的不透光層的厚度變動值,進而反映出產品薄膜的真實厚度。另外,在膜厚量測系統10中,測距裝置102與測距裝置104設置在傳輸路徑100b上,因此可即時性地對進出製程機台100的每個晶圓結構W進行膜厚量測。Based on the above-mentioned embodiments, the film
圖2為本發明一實施例的膜厚量測方法的流程圖。圖3A為本發明一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。圖3B為本發明一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。FIG. 2 is a flowchart of a film thickness measurement method according to an embodiment of the present invention. 3A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to an embodiment of the present invention. 3B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to an embodiment of the present invention.
在本實施例中,膜厚量測方法是利用膜厚量測系統10來進行說明,但本發明並不以此為限。在一些實施例中,本實施例的膜厚量測方法亦可應用於其他膜厚量測系統中。此外,關於膜厚量測系統10中的各構件可參考圖1的實施例的說明,於此不再說明。In this embodiment, the film thickness measurement method is described by using the film
請參照圖1、圖2、圖3A與圖3B,進行步驟S100,提供製程機台100。製程機台100可包括腔室100a與連接至腔室100a的傳輸路徑100b。製程機台100可為沉積機台、蝕刻機台、研磨機台(如,化學機械研磨機台)或清洗機台。在本實施例中,製程機台100是以沉積機台為例來進行說明。Please refer to FIG. 1, FIG. 2, FIG. 3A, and FIG. 3B, and proceed to step S100 to provide a
進行步驟S102,提供互相面對的至少一個測距裝置102與至少一個測距裝置104。測距裝置102與測距裝置104可設置在傳輸路徑100b上。在測距裝置102與測距裝置104之間可具有量測區R。Step S102 is performed to provide at least one ranging
進行步驟S104,獲得測距裝置102與測距裝置104之間的距離Ds(如圖3A所示)。距離Ds的量測方法例如是使用測距裝置102或測距裝置104進行量測,但本發明並不以此限。Step S104 is performed to obtain the distance Ds between the
進行步驟S106,在將晶圓結構W送入製程機台100的腔室100a之前,獲得晶圓結構W的初始厚度Tw。晶圓結構W可僅包括晶圓本身或是包括晶圓與位在晶圓上的膜層。晶圓結構W具有彼此相對的第一面S1與第二面S2。第一面S1與第二面S2可分別為晶圓結構W的正面與背面中的一者與另一者。Step S106 is performed to obtain the initial thickness Tw of the wafer structure W before the wafer structure W is sent into the
晶圓結構W的初始厚度Tw的量測方法可包括以下步驟,但本發明並不以此為限。如圖3A所示,當晶圓結構W進入量測區R時,使用測距裝置102量測測距裝置102與晶圓結構W的第一面S1之間的距離D1f,且使用測距裝置104量測測距裝置104與晶圓結構W的第二面S2之間的距離D1b。將距離Ds減去距離D1f與距離D1b,而獲得晶圓結構W的初始厚度Tw(如下式(1)所示)。
Tw = Ds – D1f – D1b 式(1)The method for measuring the initial thickness Tw of the wafer structure W may include the following steps, but the invention is not limited thereto. As shown in FIG. 3A, when the wafer structure W enters the measurement area R, the
進行步驟S108,將晶圓結構W送入製程機台100的腔室100a中,且對晶圓結構W的第一面S1進行製程處理。製程處理例如是沉積製程、蝕刻製程、研磨製程(如,化學機械研磨製程)或清洗製程。在本實施例中,上述製程處理是以進行沉積製程為例來進行說明。如圖3B所示,可藉由沉積製程在晶圓結構W上形成不透光層200。不透光層200例如是金屬層。金屬層的材料例如是鋁、銅或鎢。In step S108, the wafer structure W is sent into the
進行步驟S110,在將晶圓結構W移出製程機台100的腔室100a之後,使用測距裝置102量測測距裝置102與位在晶圓結構W的第一面S1的不透光層200之間的距離D2f(如圖3B所示)。In step S110, after the wafer structure W is removed from the
進行步驟S112,在將晶圓結構W移出製程機台100的腔室100a之後,使用測距裝置104量測測距裝置104與晶圓結構W的第二面S2之間的距離D2b(如圖3B所示)。In step S112, after the wafer structure W is moved out of the
此外,距離Ds、晶圓結構W的初始厚度Tw、距離D2f與距離D2b可在量測區R中進行量測。In addition, the distance Ds, the initial thickness Tw of the wafer structure W, the distance D2f, and the distance D2b can be measured in the measurement area R.
進行步驟S114,將距離Ds減去距離D2f、距離D2b與晶圓結構W的初始厚度Tw,而獲得不透光層200的厚度變動值ΔT(如下式(2)所示)。 ΔT = Ds – D2f – D2b – Tw 式(2)Step S114 is performed to subtract the distance D2f, the distance D2b, and the initial thickness Tw of the wafer structure W from the distance Ds to obtain the thickness variation value ΔT of the opaque layer 200 (as shown in the following formula (2)). ΔT = Ds – D2f – D2b – Tw Equation (2)
當厚度變動值ΔT為正值,則厚度變動值ΔT表示不透光層200的厚度增加值。當厚度變動值ΔT為負值,則厚度變動值ΔT表示不透光層200的厚度減少值。當厚度變動值ΔT為0,表示不透光層200的厚度不變。When the thickness variation value ΔT is a positive value, the thickness variation value ΔT represents the thickness increase value of the
在本實施例中,由於是對晶圓結構W進行沉積製程,因此厚度變動值ΔT可為正值,且厚度變動值ΔT表示由沉積製程所形成的不透光層200的厚度。在其他實施例中,在對晶圓結構W進行蝕刻製程或研磨製程的情況下,厚度變動值ΔT可為負值,且厚度變動值ΔT表示由蝕刻製程或研磨製程所移除的不透光層200的厚度。在其他實施例中,在對晶圓結構W進行清洗製程的情況下,厚度變動值ΔT可為0,表示清洗製程並未對不透光層200的厚度造成影響。In this embodiment, since the deposition process is performed on the wafer structure W, the thickness variation value ΔT may be a positive value, and the thickness variation value ΔT represents the thickness of the
基於上述實施例可知,上述膜厚量測方法可藉由測距裝置102與測距裝置104來量測晶圓結構W的不透光層200的厚度變動值ΔT,進而反映出產品薄膜的真實厚度。另外,上述實施例的膜厚量測方法可即時性地對進出製程機台100的每個晶圓結構W進行膜厚量測。如此一來,當不透光層200的厚度產生輕微的偏差時,可藉由製程機台100進行自動調整。當不透光層200的厚度產生嚴重異常時,可直接停止製程機台100的運作,待原因解決再重啟製程。此外,在上述實施例的膜厚量測方法中,藉由將距離Ds減去距離D2f、距離D2b與晶圓結構W的初始厚度Tw,而獲得不透光層200的厚度變動值ΔT,因此即使晶圓結構W產生形變也不會影響量測結果。Based on the above embodiments, it can be seen that the above film thickness measurement method can measure the thickness variation ΔT of the
圖4A為本發明另一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。圖4B為本發明另一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。4A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to another embodiment of the present invention. 4B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to another embodiment of the present invention.
以下,藉由圖4A與圖4B來說明厚度變動值ΔT為負數的實施例。在圖4A與圖4B中,與圖3A與圖3B相同或相似的構件以相同的符號表示,且省略其說明。Hereinafter, an embodiment in which the thickness variation value ΔT is a negative number will be described with reference to FIGS. 4A and 4B. In FIGS. 4A and 4B, components that are the same as or similar to those in FIGS. 3A and 3B are denoted by the same symbols, and their description is omitted.
在本實施例中,對晶圓結構W的第一面S1所進行的製程處理是以進行蝕刻製程或研磨製程為例來進行說明。In this embodiment, the process processing performed on the first surface S1 of the wafer structure W is described by taking an etching process or a polishing process as an example.
請參照圖1與圖4A,在將晶圓結構W送入製程機台100的腔室100a進行蝕刻製程或研磨製程之前,可藉由上述式(1)獲得晶圓結構W的初始厚度Tw。在本實施例中,晶圓結構W可包括晶圓結構W1與不透光層202。亦即,晶圓結構W的初始厚度Tw為晶圓結構W1的厚度與不透光層202的厚度的總和。晶圓結構W1可僅包括晶圓本身或是包括晶圓與位在晶圓上的膜層。不透光層202例如是金屬層。金屬層的材料例如是鋁、銅或鎢。1 and 4A, before the wafer structure W is sent into the
請參照圖4B,在對晶圓結構W的第一面S1進行蝕刻製程或研磨製程之後,可藉由上述式(2)獲得不透光層202的厚度變動值ΔT。在本實施例中,由於是對晶圓結構W進行蝕刻製程或研磨製程,因此厚度變動值ΔT為負值,且厚度變動值ΔT表示由蝕刻製程或研磨製程所移除的不透光層202的厚度。Referring to FIG. 4B, after the etching process or the polishing process is performed on the first surface S1 of the wafer structure W, the thickness variation value ΔT of the
綜上所述,上述實施例的膜厚量測系統及膜厚量測方法可藉由距離來量測晶圓結構的不透光層的厚度變動值,進而反映出產品薄膜的真實厚度。In summary, the film thickness measurement system and film thickness measurement method of the above embodiments can measure the thickness variation of the opaque layer of the wafer structure by distance, and then reflect the true thickness of the product film.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.
10:膜厚量測系統
100:製程機台
100a:腔室
100b:傳輸路徑
102、104:測距裝置
106:晶圓盒
108a:光源
108b:光感測器
200、202:不透光層
Ds、D1f、D1b、D2f、D2b:距離
R:量測區
S1:第一面
S2:第二面
S100、S102、S104、S106、S108、S110、S112、S114:步驟
Tw:初始厚度
W、W1:晶圓結構
ΔT:厚度變動值10: Film thickness measurement system
100:
圖1A為本發明一實施例的膜厚量測系統的示意圖。 圖1B為圖1A中的測距裝置的示意圖。 圖1C為圖1A中的測距裝置的上視圖。 圖2為本發明一實施例的膜厚量測方法的流程圖。 圖3A為本發明一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。 圖3B為本發明一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。 圖4A為本發明另一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。 圖4B為本發明另一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。FIG. 1A is a schematic diagram of a film thickness measurement system according to an embodiment of the invention. Fig. 1B is a schematic diagram of the distance measuring device in Fig. 1A. Fig. 1C is a top view of the distance measuring device in Fig. 1A. FIG. 2 is a flowchart of a film thickness measurement method according to an embodiment of the present invention. 3A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to an embodiment of the present invention. 3B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to an embodiment of the present invention. 4A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to another embodiment of the present invention. 4B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to another embodiment of the present invention.
10:膜厚量測系統 10: Film thickness measurement system
100:製程機台 100: Process machine
100a:腔室 100a: Chamber
100b:傳輸路徑 100b: Transmission path
102、104:測距裝置 102, 104: Ranging device
106:晶圓盒 106: Wafer Box
R:量測區 R: Measuring area
W:晶圓結構 W: Wafer structure
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108125590A TWI736940B (en) | 2019-07-19 | 2019-07-19 | Film thickness measuring system and film thickness measuring method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108125590A TWI736940B (en) | 2019-07-19 | 2019-07-19 | Film thickness measuring system and film thickness measuring method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202104842A TW202104842A (en) | 2021-02-01 |
TWI736940B true TWI736940B (en) | 2021-08-21 |
Family
ID=75745108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108125590A TWI736940B (en) | 2019-07-19 | 2019-07-19 | Film thickness measuring system and film thickness measuring method |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI736940B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5220405A (en) * | 1991-12-20 | 1993-06-15 | International Business Machines Corporation | Interferometer for in situ measurement of thin film thickness changes |
US7130029B2 (en) * | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
EP1828713B1 (en) * | 2004-12-21 | 2011-09-07 | Honeywell International Inc. | Thin film thickness measurement method and apparatus |
KR101075053B1 (en) * | 2006-02-22 | 2011-10-21 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate processing apparatus, substrate transfer apparatus, substrate clamp apparatus, and chemical liquid treatment apparatus |
TW201305528A (en) * | 2011-06-17 | 2013-02-01 | Precitec Optronik Gmbh | Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer |
EP1460374B1 (en) * | 2003-03-20 | 2016-05-11 | KLA-Tencor Corporation | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
-
2019
- 2019-07-19 TW TW108125590A patent/TWI736940B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5220405A (en) * | 1991-12-20 | 1993-06-15 | International Business Machines Corporation | Interferometer for in situ measurement of thin film thickness changes |
US7130029B2 (en) * | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
EP1460374B1 (en) * | 2003-03-20 | 2016-05-11 | KLA-Tencor Corporation | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
EP1828713B1 (en) * | 2004-12-21 | 2011-09-07 | Honeywell International Inc. | Thin film thickness measurement method and apparatus |
KR101075053B1 (en) * | 2006-02-22 | 2011-10-21 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate processing apparatus, substrate transfer apparatus, substrate clamp apparatus, and chemical liquid treatment apparatus |
TW201305528A (en) * | 2011-06-17 | 2013-02-01 | Precitec Optronik Gmbh | Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer |
Also Published As
Publication number | Publication date |
---|---|
TW202104842A (en) | 2021-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7402207B1 (en) | Method and apparatus for controlling the thickness of a selective epitaxial growth layer | |
JP5850601B2 (en) | In-situ wafer temperature measurement and control | |
JP2018515795A (en) | Apparatus for measuring thin film provided with transparent substrate and measuring method thereof | |
US20060157698A1 (en) | Semiconductor manufacturing system, semiconductor device and method of manufacture | |
TW200305250A (en) | Methodology for repeatable post etch cd in a production tool | |
JP5629762B2 (en) | Apparatus and method for improving bevel etching reproducibility between substrates | |
US20220028713A1 (en) | Integrated substrate measurement system to improve manufacturing process performance | |
KR20230005321A (en) | Substrate measurement subsystem | |
TWI736940B (en) | Film thickness measuring system and film thickness measuring method | |
US20050281451A1 (en) | Process variable of interest monitoring and control | |
JP2002162729A (en) | Method and apparatus for testing pattern and method of manufacturing mask | |
TWI675181B (en) | Wafer film measuring method and device | |
JP4166400B2 (en) | Radiation temperature measurement method | |
TW202129562A (en) | Process optimization using design of experiments and response surface models | |
US20240125589A1 (en) | Film thickness measuring device and film thickness measuring method | |
JP2796404B2 (en) | Exposure method and apparatus, and thin film production control method and apparatus using the same | |
CN108984913B (en) | Matching verification method applied to dry photoresist stripping process | |
Tran et al. | Process induced Wafer Geometry impact on center and edge lithography performance for sub 2X nm nodes | |
TWI853176B (en) | Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall | |
CN109830446B (en) | On-line detection method for roughness of thin film on surface of wafer and photoetching track equipment thereof | |
US20240085811A1 (en) | Determining apparatus, pattern forming apparatus, and method for manufacturing article | |
JPH0687478B2 (en) | Wiring layer inspection method | |
US20240321564A1 (en) | Indirect plasma health monitoring | |
JP2020051759A (en) | Foreign matter inspection device, exposure device, and article production method | |
TWI743041B (en) | Inspection system and method for adjusting imaging performance of inspection system |