TWI736735B - 基板處理方法以及基板處理裝置 - Google Patents

基板處理方法以及基板處理裝置 Download PDF

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Publication number
TWI736735B
TWI736735B TW107102053A TW107102053A TWI736735B TW I736735 B TWI736735 B TW I736735B TW 107102053 A TW107102053 A TW 107102053A TW 107102053 A TW107102053 A TW 107102053A TW I736735 B TWI736735 B TW I736735B
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TW
Taiwan
Prior art keywords
substrate
film
liquid
thickness
rotation
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TW107102053A
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English (en)
Chinese (zh)
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TW201834296A (zh
Inventor
樋口鮎美
岩晃久
Original Assignee
日商斯庫林集團股份有限公司
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Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201834296A publication Critical patent/TW201834296A/zh
Application granted granted Critical
Publication of TWI736735B publication Critical patent/TWI736735B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW107102053A 2017-02-09 2018-01-19 基板處理方法以及基板處理裝置 TWI736735B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-022153 2017-02-09
JP2017022153A JP6814653B2 (ja) 2017-02-09 2017-02-09 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
TW201834296A TW201834296A (zh) 2018-09-16
TWI736735B true TWI736735B (zh) 2021-08-21

Family

ID=63108164

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107102053A TWI736735B (zh) 2017-02-09 2018-01-19 基板處理方法以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP6814653B2 (ja)
KR (1) KR102301802B1 (ja)
CN (1) CN110214365B (ja)
TW (1) TWI736735B (ja)
WO (1) WO2018147008A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102276005B1 (ko) * 2018-08-29 2021-07-14 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
KR102331260B1 (ko) * 2019-12-27 2021-11-26 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
TW202406634A (zh) * 2022-04-28 2024-02-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN115138632B (zh) * 2022-08-31 2022-12-09 中国船舶重工集团公司第七0七研究所 一种提升石英谐振子q值的表面处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201342512A (zh) * 2012-02-29 2013-10-16 Dainippon Screen Mfg 基板處理裝置及基板處理方法
TW201508815A (zh) * 2013-03-29 2015-03-01 Shibaura Mechatronics Corp 基板處理裝置及基板處理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555137A (ja) * 1991-08-23 1993-03-05 Toshiba Corp 半導体基板処理装置
US20050026455A1 (en) * 2003-05-30 2005-02-03 Satomi Hamada Substrate processing apparatus and substrate processing method
US20050023149A1 (en) * 2003-06-05 2005-02-03 Tsutomu Nakada Plating apparatus, plating method and substrate processing apparatus
US20050208774A1 (en) * 2004-01-08 2005-09-22 Akira Fukunaga Wet processing method and processing apparatus of substrate
JP2005217282A (ja) * 2004-01-30 2005-08-11 Tokyo Electron Ltd 塗布膜形成方法及び塗布膜形成装置
JP5188216B2 (ja) * 2007-07-30 2013-04-24 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5114252B2 (ja) * 2008-03-06 2013-01-09 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5390808B2 (ja) * 2008-08-27 2014-01-15 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5312879B2 (ja) * 2008-09-02 2013-10-09 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP5911689B2 (ja) * 2011-09-29 2016-04-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5920867B2 (ja) 2011-09-29 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5837829B2 (ja) * 2012-01-11 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6436455B2 (ja) * 2013-10-16 2018-12-12 須賀　唯知 基板表面処理装置及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201342512A (zh) * 2012-02-29 2013-10-16 Dainippon Screen Mfg 基板處理裝置及基板處理方法
TW201508815A (zh) * 2013-03-29 2015-03-01 Shibaura Mechatronics Corp 基板處理裝置及基板處理方法

Also Published As

Publication number Publication date
WO2018147008A1 (ja) 2018-08-16
CN110214365B (zh) 2023-06-06
TW201834296A (zh) 2018-09-16
JP6814653B2 (ja) 2021-01-20
CN110214365A (zh) 2019-09-06
KR20190099518A (ko) 2019-08-27
KR102301802B1 (ko) 2021-09-14
JP2018129432A (ja) 2018-08-16

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