TWI734769B - Paste and multilayer ceramic capacitors for conductor formation - Google Patents

Paste and multilayer ceramic capacitors for conductor formation Download PDF

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TWI734769B
TWI734769B TW106112105A TW106112105A TWI734769B TW I734769 B TWI734769 B TW I734769B TW 106112105 A TW106112105 A TW 106112105A TW 106112105 A TW106112105 A TW 106112105A TW I734769 B TWI734769 B TW I734769B
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nickel
conductor
particles
molar fraction
barium titanate
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TW201810293A (en
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小川昌輝
岡部一幸
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日商則武股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • H01G4/008Selection of materials
    • H01G4/0085Fried electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • H01G4/1209Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors

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Abstract

本發明提供一種能夠以少的鈦酸鋇量實現良好的導體膜的連續性的導體形成用糊。藉由本發明,提供一種含有鎳粒子與鈦酸鋇粒子及分散介質的導體形成用糊。該導體形成用糊中,相對於鎳粒子100質量份,鈦酸鋇粒子的含量為10質量份以下。另外,於利用X射線光電子分光(XPS)的鎳粒子表面的分析中,氫氧化鎳的莫耳分率B對於氧化鎳的莫耳分率A的比(B/A)為0.2≦(B/A)<1。 The present invention provides a conductor forming paste capable of achieving good continuity of a conductor film with a small amount of barium titanate. According to the present invention, there is provided a conductor forming paste containing nickel particles, barium titanate particles, and a dispersion medium. In this conductor-forming paste, the content of barium titanate particles is 10 parts by mass or less with respect to 100 parts by mass of nickel particles. In addition, in the analysis of the surface of nickel particles by X-ray photoelectron spectroscopy (XPS), the ratio of the molar fraction B of nickel hydroxide to the molar fraction A of nickel oxide (B/A) is 0.2≦(B/ A)<1.

Description

導體形成用糊及積層陶瓷電容器 Paste and multilayer ceramic capacitors for conductor formation

本發明是有關於一種導體形成用糊。尤其是有關於一種用於在積層陶瓷電容器等陶瓷電子零件(包含各種電路元件)中形成導體膜(內部電極等)的用途的導體形成用糊。 The present invention relates to a paste for forming a conductor. In particular, it relates to a conductor forming paste used for the purpose of forming conductor films (internal electrodes, etc.) in ceramic electronic parts (including various circuit elements) such as multilayer ceramic capacitors.

近年來,伴隨電氣設備的小型化‧高功能化,與其他電容器相比,常用小型且高容量的積層陶瓷電容器(Multi-layer Ceramic Capacitors,MLCC)等陶瓷電子零件。例如,積層陶瓷電容器藉由將含有導電性金屬粉末的內部電極層(導體膜)與電介質層(陶瓷層)交替地積層來形成,且強烈要求所述電介質層及/或內部電極層的多層化、薄層化。 In recent years, with the miniaturization and higher functionality of electrical equipment, compared with other capacitors, ceramic electronic components such as multi-layer ceramic capacitors (MLCC), which are small and high-capacity, are commonly used. For example, multilayer ceramic capacitors are formed by alternately laminating internal electrode layers (conductor films) and dielectric layers (ceramic layers) containing conductive metal powder, and there is a strong demand for multilayering of the dielectric layers and/or internal electrode layers , Thin layer.

所述積層陶瓷電容器可藉由如下方式來製造:於將以鈦酸鋇等為代表的陶瓷粉末與黏合劑作為主成分的未煅燒的陶瓷生片上,賦予為了形成導體膜(內部電極層)而製備成糊狀的導電性材料(以下稱為「導體形成用糊」),將該些積層多層後,同時進行煅燒來進行一體燒結,最後形成外部電極。作為用以形成導體膜的導體形成用糊,例如可使用使鎳粉末(導電性粉末材料)分散於有機媒介物(分散介質)中而成者。另外,於導體形成用糊中,除所述鎳粉末以外,添加包含鈦酸鋇(陶瓷粉末)的共存材料。藉由向導體形成用糊中添加鈦酸鋇,煅燒時的熱收縮(燒 結)得到抑制,導體膜的連續性提昇。作為揭示此種現有技術的文獻,可列舉專利文獻1~專利文獻3。 The multilayer ceramic capacitor can be manufactured by applying ceramic powders represented by barium titanate and the like on an unfired ceramic green sheet containing a binder as the main components, and providing a conductive film (internal electrode layer). A paste-like conductive material (hereinafter referred to as "conductor-forming paste") is prepared, and these are laminated in multiple layers, and then calcined at the same time for integral sintering, and finally an external electrode is formed. As the conductor formation paste for forming the conductor film, for example, a paste obtained by dispersing nickel powder (conductive powder material) in an organic vehicle (dispersion medium) can be used. In addition, in addition to the nickel powder, a coexisting material containing barium titanate (ceramic powder) is added to the conductor forming paste. By adding barium titanate to the paste for forming the conductor, the heat shrinkage during firing (firing The junction) is suppressed, and the continuity of the conductor film is improved. As a document that discloses such a prior art, Patent Document 1 to Patent Document 3 can be cited.

[專利文獻1]日本專利特開2015-216244號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2015-216244

[專利文獻2]日本專利特開2004-330247號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2004-330247

[專利文獻3]日本專利特開2007-157563號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2007-157563

但是,若向導體形成用糊中添加鈦酸鋇,則雖然可提昇導體膜的連續性,但會引起鈦酸鋇與形成電介質層的陶瓷粒子的反應,並於電介質層中產生組成不均。於伴隨積層陶瓷電容器的小型化、多積層化而將電介質層加以薄層化的情況下,所述組成不均變得更顯著。其結果,陶瓷電子零件的品質變得不穩定,可成為導致可靠性的下降的主要原因。就品質穩定性的觀點而言,欲減少調配至導體形成用糊中的鈦酸鋇的添加量。另一方面,為了積層陶瓷電容器的小型化、多積層化,導體膜亦必須薄層化。因此,要求將調配至導體形成用糊中的鎳粉末加以微粒子化。但是,當使用小徑的鎳粒子時,若進而進行所述鈦酸鋇的添加量的減少,則因鎳粒子的耐熱性不足而產生熱收縮,且導體膜的連續性下降。需要一種能夠以少的鈦酸鋇(共存材料)量實現良好的導體膜的連續性的技術。 However, if barium titanate is added to the conductor forming paste, although the continuity of the conductor film can be improved, it will cause a reaction between the barium titanate and the ceramic particles forming the dielectric layer, and cause compositional unevenness in the dielectric layer. In the case where the dielectric layer is thinned along with the miniaturization and multi-layer build-up of the multilayer ceramic capacitor, the composition unevenness becomes more noticeable. As a result, the quality of ceramic electronic components becomes unstable, which may become a main cause of a decrease in reliability. From the viewpoint of quality stability, it is desired to reduce the amount of barium titanate added to the conductor forming paste. On the other hand, in order to miniaturize and multiply multilayer ceramic capacitors, the conductor film must also be thinned. Therefore, the nickel powder blended in the conductor forming paste is required to be finely divided. However, when nickel particles with a small diameter are used, if the addition amount of barium titanate is further reduced, thermal shrinkage occurs due to insufficient heat resistance of the nickel particles, and the continuity of the conductor film is reduced. There is a need for a technique capable of achieving good continuity of the conductor film with a small amount of barium titanate (coexisting material).

本發明是鑒於所述情況而成者,其主要目的在於提供一種能夠以少的鈦酸鋇(共存材料)量實現良好的導體膜的連續性 的導體形成用糊。相關的其他目的在於提供一種具備使用所述導體形成用糊所形成的內部電極層的積層陶瓷電容器。 The present invention was made in view of the above circumstances, and its main purpose is to provide a conductive film that can achieve good continuity of the conductor film with a small amount of barium titanate (coexisting material) The conductor is formed with paste. Another related object is to provide a multilayer ceramic capacitor including an internal electrode layer formed using the conductor forming paste.

根據本發明,提供一種用於形成導體膜的導體形成用糊。該導體形成用糊包括鎳粒子、鈦酸鋇粒子、及分散介質。相對於所述鎳粒子100質量份,所述鈦酸鋇粒子的含量為10質量份以下。而且,於利用X射線光電子分光(X-ray Photoelectron Spectroscopy,XPS)的所述鎳粒子表面的分析中,氫氧化鎳的莫耳分率B對於氧化鎳的莫耳分率A的比(B/A)為0.2≦(B/A)<1。藉由使用如所述般以特定的莫耳分率比包含氧化鎳與氫氧化鎳的鎳粒子,能夠以少的鈦酸鋇量實現良好的導體膜的連續性。 According to the present invention, there is provided a conductor forming paste for forming a conductor film. The conductor forming paste includes nickel particles, barium titanate particles, and a dispersion medium. The content of the barium titanate particles is 10 parts by mass or less with respect to 100 parts by mass of the nickel particles. Furthermore, in the analysis of the surface of the nickel particles by X-ray Photoelectron Spectroscopy (XPS), the ratio of the molar fraction B of nickel hydroxide to the molar fraction A of nickel oxide (B/ A) is 0.2≦(B/A)<1. By using nickel particles containing nickel oxide and nickel hydroxide at a specific molar fraction ratio as described above, it is possible to achieve good conductor film continuity with a small amount of barium titanate.

於本文所揭示的導體形成用糊的較佳的一形態中,所述比(B/A)為0.3≦(B/A)≦0.8。若為此種氧化鎳與氫氧化鎳的莫耳分率比(B/A)的範圍內,則可更良好地發揮所述效果。 In a preferred form of the conductor forming paste disclosed herein, the ratio (B/A) is 0.3≦(B/A)≦0.8. If it is in the range of the molar fraction ratio (B/A) of such nickel oxide and nickel hydroxide, the effect can be exhibited more satisfactorily.

於本文所揭示的導體形成用糊的較佳的一形態中,所述氧化鎳的莫耳分率A比所述氫氧化鎳的莫耳分率B大12莫耳%以上。若如此,則可更適當地發揮由使氧化鎳的莫耳分率A大於氫氧化鎳的莫耳分率B所產生的效果(例如鎳粒子的耐熱性提昇效果)。 In a preferred form of the conductor forming paste disclosed herein, the molar fraction A of the nickel oxide is greater than the molar fraction B of the nickel hydroxide by more than 12 mol%. If so, the effect (for example, the heat resistance improvement effect of nickel particles) produced by making the molar fraction A of nickel oxide larger than the molar fraction B of nickel hydroxide can be exhibited more suitably.

於本文所揭示的導體形成用糊的較佳的一形態中,自所述氧化鎳的莫耳分率A減去所述氫氧化鎳的莫耳分率B所得的值(A-B)為30莫耳%以下。根據所述構成,能夠以高水準實現鎳 粒子的耐熱性與分散性的併存。 In a preferred form of the conductor forming paste disclosed herein, the value (AB) obtained by subtracting the mole fraction B of the nickel hydroxide from the mole fraction A of the nickel oxide is 30 moles Less than ear%. According to the structure, nickel can be realized at a high level The heat resistance and dispersibility of the particles coexist.

於本文所揭示的導體形成用糊的較佳的一形態中,所述鎳粒子的平均粒徑為10nm~500nm。根據此種導體形成用糊,可實現導體膜的薄層化,並更良好地提高該導體膜的連續性。 In a preferred form of the conductor forming paste disclosed herein, the average particle diameter of the nickel particles is 10 nm to 500 nm. According to such a paste for conductor formation, the thickness of the conductor film can be reduced, and the continuity of the conductor film can be improved more satisfactorily.

於本文所揭示的導體形成用糊的較佳的一形態中,用於形成積層陶瓷電子零件中的內部電極層。於積層陶瓷電子零件的領域中,為了高容量化或高可靠性,需要連續性更高的內部電極層(導體膜)。因此,積層陶瓷電子零件的內部電極層可成為本文所揭示的技術的較佳的應用對象。 In a preferred form of the conductor forming paste disclosed herein, it is used to form an internal electrode layer in a multilayer ceramic electronic component. In the field of multilayer ceramic electronic parts, in order to increase the capacity or the reliability, an internal electrode layer (conductor film) with higher continuity is required. Therefore, the internal electrode layer of the multilayer ceramic electronic component can be a better application target of the technology disclosed herein.

根據該說明書,另外提供一種積層陶瓷電容器。該積層陶瓷電容器具備包含本文所揭示的任一種導體形成用糊的煅燒體的內部電極層。根據所述構成,可提供一種內部電極層的連續性良好、且品質穩定性優異的高性能的積層陶瓷電容器。 According to this specification, a multilayer ceramic capacitor is additionally provided. This multilayer ceramic capacitor is equipped with the internal electrode layer containing the sintered body of any conductor-forming paste disclosed herein. According to the above configuration, it is possible to provide a high-performance multilayer ceramic capacitor with good continuity of the internal electrode layer and excellent quality stability.

200:積層陶瓷電容器 200: Multilayer ceramic capacitor

210:電介質膜 210: Dielectric film

220:導體膜 220: Conductor film

230:外部電極 230: External electrode

250:電子零件本體 250: Electronic component body

圖1是示意性地表示的本發明的一實施形態的積層陶瓷電容器的部分剖面圖。 Fig. 1 is a partial cross-sectional view schematically showing a multilayer ceramic capacitor according to an embodiment of the present invention.

圖2是表示氧化鎳及氫氧化鎳的莫耳分率比(B/A)與被覆率的關係的圖表。 Fig. 2 is a graph showing the relationship between the molar fraction ratio (B/A) of nickel oxide and nickel hydroxide and the coverage.

圖3是例2的積層體片的剖面掃描型電子顯微鏡(Scanning Electron Microscope,SEM)像。 3 is a scanning electron microscope (Scanning Electron Microscope, SEM) image of a cross-section of the laminate sheet of Example 2. FIG.

圖4是例3的積層體片的剖面SEM像。 4 is a cross-sectional SEM image of the laminate sheet of Example 3. FIG.

圖5是例4的積層體片的剖面SEM像。 5 is a cross-sectional SEM image of the laminate sheet of Example 4. FIG.

以下,對本發明的適宜的實施形態進行說明。再者,於本說明書中特別提及的事項以外的事體且為本發明的實施中所需的事體(積層陶瓷電容器的製造製程等)可作為根據該領域中的現有技術的從業人員的設計事項來掌握。本發明可根據本說明書中所揭示的內容與該領域中的技術常識來實施。 Hereinafter, suitable embodiments of the present invention will be described. Furthermore, matters other than the matters specifically mentioned in this specification and which are required in the implementation of the present invention (the manufacturing process of multilayer ceramic capacitors, etc.) can be used as the basis for practitioners based on the prior art in the field. Design matters to master. The present invention can be implemented based on the content disclosed in this specification and common technical knowledge in the field.

<導體形成用糊> <Paste for Conductor Formation>

(鎳粒子) (Nickel particles)

本文所揭示的導體形成用糊是用於形成導體膜(例如積層陶瓷電子零件的內部電極層)的導體形成用糊,其包括鎳粒子、鈦酸鋇粒子、及分散介質。該導體形成用糊中,相對於鎳粒子100質量份,鈦酸鋇粒子的含量為10質量份以下。而且,於利用X射線光電子分光(XPS)的鎳粒子表面的分析中,氫氧化鎳的莫耳分率B對於氧化鎳的莫耳分率A的比(B/A)為0.2≦(B/A)<1。藉由含有如所述般以特定的莫耳分率比包含氧化鎳與氫氧化鎳的鎳粒子,能夠以少的鈦酸鋇(共存材料)量實現良好的導體膜的連續性。 The conductor-forming paste disclosed herein is a conductor-forming paste for forming a conductor film (for example, an internal electrode layer of a multilayer ceramic electronic component), and includes nickel particles, barium titanate particles, and a dispersion medium. In this conductor-forming paste, the content of barium titanate particles is 10 parts by mass or less with respect to 100 parts by mass of nickel particles. Furthermore, in the analysis of the surface of nickel particles by X-ray photoelectron spectroscopy (XPS), the ratio (B/A) of the molar fraction B of nickel hydroxide to the molar fraction A of nickel oxide was 0.2≦(B/ A)<1. By containing nickel particles containing nickel oxide and nickel hydroxide at a specific molar fraction ratio as described above, it is possible to achieve good continuity of the conductor film with a small amount of barium titanate (coexisting material).

作為獲得此種效果的理由,並不特別限定性地進行解釋,例如可如以下般考慮。即,鎳粒子的表面通常包含氧化鎳(典型的是NiO)、氫氧化鎳(典型的是Ni(OH)2)及金屬鎳(單體)。其中,氧化鎳的熔點高於金屬鎳,有助於提昇鎳粒子的耐熱性, 另一方面,氫氧化鎳為鹼性物質,有助於提昇鎳粒子的分散性。於鈦酸鋇粒子的含量多的導體形成用糊的情況下,使用所述莫耳分率比(B/A)大(即相對於氧化鎳的莫耳分率A,氫氧化鎳的莫耳分率B大)的鎳粒子會提昇鎳粒子的分散性,且鎳粒子與鈦酸鋇粒子均勻地混合。因此,由鈦酸鋇粒子所產生的熱收縮(燒結)抑制效果更適當地發揮,容易實現良好的導體膜的連續性。相對於此,於鈦酸鋇粒子的含量少的導體形成用糊中,由鈦酸鋇粒子所產生的熱收縮抑制效果的影響小,因此就抑制熱收縮的觀點而言,提高該粒子本身的耐熱性比提高鎳粒子的分散性更有利。即,可認為使用所述莫耳分率比(B/A)小(即相對於氧化鎳的莫耳分率A,氫氧化鎳的莫耳分率B小)鎳粒子會抑制煅燒時的熱收縮(燒結),且導體膜的連續性提昇。 The reason for obtaining such an effect is not particularly limitedly interpreted, and it can be considered as follows, for example. That is, the surface of the nickel particles usually contains nickel oxide (typically NiO), nickel hydroxide (typically Ni(OH) 2 ), and metallic nickel (single body). Among them, the melting point of nickel oxide is higher than that of metallic nickel, which helps to improve the heat resistance of nickel particles. On the other hand, nickel hydroxide is an alkaline substance and helps to improve the dispersibility of nickel particles. In the case of a conductor-forming paste with a large content of barium titanate particles, the molar fraction ratio (B/A) is larger (that is, the molar fraction A relative to nickel oxide, and the molar fraction A of nickel hydroxide is used. The nickel particles with a large fraction B) will improve the dispersibility of the nickel particles, and the nickel particles and the barium titanate particles will be uniformly mixed. Therefore, the thermal shrinkage (sintering) suppression effect by the barium titanate particles is more appropriately exerted, and it is easy to achieve good continuity of the conductor film. In contrast, in a conductor-forming paste with a small content of barium titanate particles, the effect of suppressing heat shrinkage by barium titanate particles is small. Therefore, from the viewpoint of suppressing heat shrinkage, the particle itself is improved. Heat resistance is more advantageous than improving the dispersibility of nickel particles. That is, it can be considered that the use of nickel particles with a molar fraction ratio (B/A) smaller (that is, the molar fraction A of nickel oxide and the molar fraction B of nickel hydroxide are small) will suppress the heat during sintering. Shrinking (sintering) and improving the continuity of the conductor film.

再者,根據本發明者等人的研究,關於由將鎳粒子表面的所述莫耳分率比(B/A)規定成本文所揭示的較佳的範圍所引起的導體膜的連續性的提昇,藉由後述的試驗例而確認於相對於鎳粒子100質量份的鈦酸鋇粒子的含量超過10質量份的導體形成用糊的情況下,無法獲得相同程度的效果。因此,藉由將所述鎳粒子表面的莫耳分率比(B/A)的規定與低含量的鈦酸鋇粒子加以組合來應用,作為由所述組合所產生的相乘效應,可提供一種能夠以少的鈦酸鋇量大幅度地提昇導體膜的連續性的導體形成用糊。 Furthermore, according to the research of the inventors, regarding the continuity of the conductor film caused by the molar fraction ratio (B/A) on the surface of the nickel particles specified in the preferred range disclosed in the text As an improvement, it was confirmed by the test example described later that in the case of the conductor-forming paste in which the content of barium titanate particles per 100 parts by mass of nickel particles exceeds 10 parts by mass, the same effect cannot be obtained. Therefore, by combining the requirements of the molar fraction ratio (B/A) on the surface of the nickel particles and the low content of barium titanate particles, as a synergistic effect produced by the combination, it is possible to provide A conductor forming paste capable of greatly improving the continuity of a conductor film with a small amount of barium titanate.

所述氫氧化鎳的莫耳分率B對於氧化鎳的莫耳分率A的比(B/A)通常只要未滿1即可,較佳為0.95以下,更佳為0.85 以下,進而佳為0.8以下,進而更佳為0.75以下,特佳為0.7以下。具有規定值以下的所述莫耳分率比(B/A)的導體形成用糊有效地提高鎳粒子本身的耐熱性。因此,可適當地發揮本文所揭示的技術的應用效果。另外,所述莫耳分率比(B/A)通常適當的是設為0.2以上,較佳為0.24以上,更佳為0.28以上,進而更佳為0.3以上(例如0.32以上)。若所述莫耳分率比(B/A)過小,則糊的黏度穩定性下降。因此,將該糊賦予至陶瓷生片等上時的穩定性、操作性及塗敷性惡化,作為結果,可能存在導體膜的連續性變成下降傾向的情況。本文所揭示的技術能夠以例如鎳粒子表面上的氫氧化鎳的莫耳分率B對於氧化鎳的莫耳分率A的比(B/A)為0.25以上、0.95以下(較佳為0.3以上、0.8以下)的形態而較佳地實施。 The ratio (B/A) of the molar fraction B of the nickel hydroxide to the molar fraction A of nickel oxide (B/A) is usually less than 1, preferably 0.95 or less, more preferably 0.85 Below, it is more preferably 0.8 or less, still more preferably 0.75 or less, and particularly preferably 0.7 or less. The conductor-forming paste having the molar fraction ratio (B/A) below a predetermined value effectively improves the heat resistance of the nickel particles themselves. Therefore, the application effect of the technology disclosed herein can be appropriately exerted. In addition, the molar fraction ratio (B/A) is usually suitably 0.2 or more, preferably 0.24 or more, more preferably 0.28 or more, and still more preferably 0.3 or more (for example, 0.32 or more). If the molar fraction ratio (B/A) is too small, the viscosity stability of the paste will decrease. Therefore, when the paste is applied to a ceramic green sheet or the like, the stability, handleability, and applicability deteriorate, and as a result, the continuity of the conductor film may tend to decrease. The technology disclosed herein can be based on, for example, that the ratio (B/A) of the molar fraction B of nickel hydroxide on the surface of nickel particles to the molar fraction A of nickel oxide is 0.25 or more and 0.95 or less (preferably 0.3 or more) , 0.8 or less).

就更良好地提昇導體膜的連續性等的觀點而言,氧化鎳的莫耳分率A較佳為比氫氧化鎳的莫耳分率B大10莫耳%以上,更佳為大12莫耳%以上,進而更佳為大15莫耳%以上,特佳為大20莫耳%以上。另外,自氧化鎳的莫耳分率A減去氫氧化鎳的莫耳分率B所得的值(即,A-B)較佳為60莫耳%以下,更佳為50莫耳%以下,進而更佳為40莫耳%以下,特佳為30莫耳%以下。例如,A-B亦可為25莫耳%以下。藉此,可更良好地發揮所述效果。 From the viewpoint of improving the continuity of the conductor film, etc., the molar fraction A of nickel oxide is preferably 10 mol% or more larger than the molar fraction B of nickel hydroxide, and more preferably 12 molar%. Ear% or more, more preferably 15 mol% or more, particularly preferably 20 mol% or more. In addition, the value obtained by subtracting the mole fraction B of nickel hydroxide from the mole fraction A of nickel oxide (ie, AB) is preferably 60 mole% or less, more preferably 50 mole% or less, and still more Preferably, it is 40 mol% or less, and particularly preferably, it is 30 mol% or less. For example, A-B may be 25 mol% or less. Thereby, the above-mentioned effect can be exhibited more satisfactorily.

所述鎳粒子表面上的氧化鎳的莫耳分率A只要與氫氧化鎳的莫耳分率B的比的值(B/A)滿足所述關係,則並無特別限 定。氧化鎳的莫耳分率A例如可為30莫耳%以上。就提高鎳粒子的耐熱性等的觀點而言,氧化鎳的莫耳分率A較佳為32莫耳%以上,更佳為35莫耳%以上。另外,氧化鎳的莫耳分率A的上限並無特別限定,通常可為85莫耳%以下。就黏度穩定性等的觀點而言,氧化鎳的莫耳分率A較佳為75莫耳%以下,更佳為65莫耳%以下(典型的是60莫耳%以下)。本文所揭示的技術能夠以鎳粒子中的氧化鎳的莫耳分率A為35莫耳%以上、75莫耳%以下(較佳為35莫耳%以上、60莫耳%以下)的形態而較佳地實施。 The mole fraction A of nickel oxide on the surface of the nickel particles is not particularly limited as long as the ratio (B/A) of the ratio of the mole fraction B of nickel hydroxide to the mole fraction B of nickel hydroxide satisfies the above relationship. Certainly. The mole fraction A of nickel oxide may be 30 mole% or more, for example. From the viewpoint of improving the heat resistance of the nickel particles, etc., the molar fraction A of the nickel oxide is preferably 32 mol% or more, and more preferably 35 mol% or more. In addition, the upper limit of the mole fraction A of the nickel oxide is not particularly limited, but it can usually be 85 mole% or less. From the viewpoint of viscosity stability and the like, the molar fraction A of nickel oxide is preferably 75 mol% or less, more preferably 65 mol% or less (typically 60 mol% or less). The technology disclosed herein can be in a form where the molar fraction A of nickel oxide in nickel particles is 35 mol% or more and 75 mol% or less (preferably 35 mol% or more and 60 mol% or less). Better implementation.

所述鎳粒子表面上的氫氧化鎳的莫耳分率B只要與氧化鎳的莫耳分率A的比的值(B/A)滿足所述關係,則並無特別限定。氫氧化鎳的莫耳分率B例如可未滿30莫耳%。就提高鎳粒子的耐熱性等的觀點而言,氫氧化鎳的莫耳分率B較佳為28莫耳%以下,更佳為25莫耳%以下。另外,氫氧化鎳的莫耳分率B的下限並無特別限定,通常可為10莫耳%以上。就鎳粒子的分散性等的觀點而言,氫氧化鎳的莫耳分率B較佳為15莫耳%以上,更佳為20莫耳%以上,進而更佳為25莫耳%以上。本文所揭示的技術能夠以鎳粒子中的氫氧化鎳的莫耳分率B為15莫耳%以上、未滿30莫耳%(較佳為20莫耳%以上、28莫耳%以下)的形態而較佳地實施。 The molar fraction B of nickel hydroxide on the surface of the nickel particles is not particularly limited as long as the ratio (B/A) of the ratio of the molar fraction A of nickel oxide to the molar fraction A of nickel oxide satisfies the above-mentioned relationship. The mole fraction B of nickel hydroxide may be less than 30 mole%, for example. From the viewpoint of improving the heat resistance of nickel particles, etc., the molar fraction B of nickel hydroxide is preferably 28 mol% or less, and more preferably 25 mol% or less. In addition, the lower limit of the molar fraction B of nickel hydroxide is not particularly limited, and it can usually be 10 mol% or more. From the viewpoint of the dispersibility of nickel particles, etc., the molar fraction B of nickel hydroxide is preferably 15 mol% or more, more preferably 20 mol% or more, and still more preferably 25 mol% or more. The technology disclosed in this paper can use the molar fraction B of the nickel hydroxide in the nickel particles to be 15 mol% or more and less than 30 mol% (preferably 20 mol% or more, 28 mol% or less). The form is preferably implemented.

所述鎳粒子表面上的金屬鎳(Ni單體)的莫耳分率C只要氧化鎳的莫耳分率A與氫氧化鎳的莫耳分率B的比的值(B/A)滿足所述關係,則並無特別限定。金屬鎳的莫耳分率C 通常可為5莫耳%以上,較佳為可為10莫耳%以上,更佳為可為15莫耳%以上。另外,金屬鎳的莫耳分率C較佳為50莫耳%以下,更佳為45莫耳%以下,進而更佳為40莫耳%以下。本文所揭示的技術能夠以鎳粒子中的金屬鎳的莫耳分率C為5莫耳%以上、50莫耳%以下(較佳為15莫耳%以上、40莫耳%以下)的形態而較佳地實施。 The molar fraction C of metallic nickel (Ni monomer) on the surface of the nickel particles as long as the ratio of the molar fraction A of nickel oxide to the molar fraction B of nickel hydroxide (B/A) satisfies the requirements The relationship is not particularly limited. The mole fraction of nickel metal C Generally, it can be 5 mol% or more, preferably 10 mol% or more, and more preferably 15 mol% or more. In addition, the molar fraction C of metallic nickel is preferably 50 mol% or less, more preferably 45 mol% or less, and still more preferably 40 mol% or less. The technology disclosed herein can be in a form in which the molar fraction C of metallic nickel in nickel particles is 5 mol% or more and 50 mol% or less (preferably 15 mol% or more and 40 mol% or less). Better implementation.

就提高鎳粒子的耐熱性等的觀點而言,較佳為所述鎳粒子表面上的金屬鎳的莫耳分率C比氧化鎳的莫耳分率A小(C<A),較佳為小0.4莫耳%以上。金屬鎳的莫耳分率C可比氧化鎳的莫耳分率A小10莫耳%以上,亦可小30莫耳%以上。另外,自氧化鎳的莫耳分率A減去金屬鎳的莫耳分率C所得的值(即,A-C)較佳為70莫耳%以下,更佳為60莫耳%以下,進而更佳為50莫耳%以下。例如,A-C亦可為45莫耳%以下。 From the viewpoint of improving the heat resistance of nickel particles, etc., it is preferable that the molar fraction C of metallic nickel on the surface of the nickel particles is smaller than the molar fraction A of nickel oxide (C<A), and it is more preferable to Smaller than 0.4 mol%. The molar fraction C of metallic nickel can be less than 10 mol% or more than 30 mol% less than the molar fraction A of nickel oxide. In addition, the value obtained by subtracting the molar fraction C of metallic nickel from the molar fraction A of nickel oxide (ie AC) is preferably 70 mol% or less, more preferably 60 mol% or less, and still more preferably It is less than 50 mol%. For example, A-C may be 45 mol% or less.

於較佳的一形態中,所述鎳粒子表面上的金屬鎳的莫耳分率C比氫氧化鎳的莫耳分率B大(B<C)。例如,金屬鎳的莫耳分率C可比氫氧化鎳的莫耳分率B大5莫耳%以上,亦可大10莫耳%以上。另外,自金屬鎳的莫耳分率C減去氫氧化鎳的莫耳分率B所得的值(即,C-B)例如可為20莫耳%以下,亦可為15莫耳%以下。 In a preferred aspect, the molar fraction C of metallic nickel on the surface of the nickel particles is greater than the molar fraction B of nickel hydroxide (B<C). For example, the molar fraction C of metallic nickel may be greater than 5 mol%, or more than 10 mol%, than the molar fraction B of nickel hydroxide. In addition, the value obtained by subtracting the molar fraction B of nickel hydroxide from the molar fraction C of metallic nickel (ie, C-B) may be 20 mol% or less, or 15 mol% or less, for example.

於另一較佳的一形態中,所述鎳粒子表面上的金屬鎳的莫耳分率C比氫氧化鎳的莫耳分率B小(C<B)。例如,金屬鎳的莫耳分率C可比氫氧化鎳的莫耳分率B小5莫耳%以上,亦可 小10莫耳%以上。另外,自氫氧化鎳的莫耳分率B減去金屬鎳的莫耳分率C所得的值(即,B-C)可為25莫耳%以下,亦可為20莫耳%以下,亦可為15莫耳%以下。 In another preferred aspect, the molar fraction C of metallic nickel on the surface of the nickel particles is smaller than the molar fraction B of nickel hydroxide (C<B). For example, the molar fraction C of metallic nickel can be less than 5 mol% or more than the molar fraction B of nickel hydroxide, or Less than 10 mol%. In addition, the value obtained by subtracting the mole fraction C of metallic nickel from the mole fraction B of nickel hydroxide (ie, BC) may be 25 mole% or less, 20 mole% or less, or 15 mol% or less.

於本文所揭示的技術中,氧化鎳、氫氧化鎳及金屬鎳的莫耳分率可藉由利用X射線光電子分光(XPS:X-ray Photoelectron Spectroscopy)的鎳粒子表面的分析來掌握。此處,X射線光電子分光法(XPS)是對試樣表面照射X射線,並測定所放出的光電子的能量,藉此分析試樣表面的構成元素與其電子狀態的方法。藉由XPS所獲得的光譜顯示出物質固有的圖案及與物質量成比例的峰值強度,因此可進行物質的定性及定量的分析。於利用所述XPS的鎳粒子表面的鎳的化學鍵結狀態的分析中,可根據歸屬於鎳與氧的鍵結狀態的峰值對於Ni2P3/2光譜整體的面積比來求出氧化鎳的莫耳分率A,根據歸屬於鎳與羥基的鍵結狀態的峰值對於Ni2P3/2光譜整體的面積比來求出氫氧化鎳的莫耳分率B,根據金屬鎳的峰值對於Ni2P3/2光譜整體的面積比來求出金屬鎳的莫耳分率C。作為X射線光電子分光裝置,可使用優貝克‧物理電子(ULVAC‧PHI)股份有限公司製造的XPS PHI-5000 VersaProbeII。 In the technique disclosed herein, the molar fraction of nickel oxide, nickel hydroxide, and metallic nickel can be grasped by analyzing the surface of nickel particles by X-ray photoelectron spectroscopy (XPS: X-ray Photoelectron Spectroscopy). Here, X-ray photoelectron spectroscopy (XPS) is a method of irradiating the surface of a sample with X-rays and measuring the energy of the emitted photoelectrons to analyze the constituent elements on the surface of the sample and their electronic states. The spectrum obtained by XPS shows the inherent pattern of the substance and the peak intensity proportional to the amount of the substance, so the qualitative and quantitative analysis of the substance can be carried out. In the analysis of the chemical bonding state of nickel on the surface of nickel particles using XPS, the molar ratio of nickel oxide can be obtained from the area ratio of the peak attributable to the bonding state of nickel and oxygen to the entire spectrum of Ni2P 3/2. Fraction A, the molar fraction B of nickel hydroxide is calculated based on the area ratio of the peak attributable to the bonding state of nickel and hydroxyl to the entire spectrum of Ni2P 3/2 , and the peak value of metallic nickel is relative to the Ni2P 3/2 spectrum. The molar fraction C of metallic nickel is calculated from the overall area ratio. As an X-ray photoelectron spectrometer, the XPS PHI-5000 VersaProbe II manufactured by ULVAC‧PHI Co., Ltd. can be used.

所述鎳粒子表面上的氧化鎳及氫氧化鎳的莫耳分率比(B/A)可藉由對鎳粒子實施氧化處理來進行調整。即,藉由適當地選擇對於鎳粒子的氧化處理條件,可將鎳粒子表面上的氧化鎳及氫氧化鎳的莫耳分率比(B/A)調整成本文所揭示的適當的範 圍。作為氧化處理的具體的方法,例如可列舉:於空氣環境下、或將氧化性氣體(例如氧氣或臭氧氣體)與氮氣等惰性氣體混合的環境下,進行加熱處理(例如140℃~250℃,典型的是160℃~230℃下的加熱處理)的方法。 The molar fraction ratio (B/A) of nickel oxide and nickel hydroxide on the surface of the nickel particles can be adjusted by performing oxidation treatment on the nickel particles. That is, by appropriately selecting the oxidation treatment conditions for the nickel particles, the molar fraction ratio (B/A) of nickel oxide and nickel hydroxide on the surface of the nickel particles can be adjusted to an appropriate range as disclosed in the article. Surrounding. As a specific method of the oxidation treatment, for example, heat treatment (for example, 140°C to 250°C, in an air environment or an environment where an oxidizing gas (for example, oxygen or ozone gas) is mixed with an inert gas such as nitrogen, etc. A typical method is heat treatment at 160°C to 230°C.

本文所揭示的鎳粒子的種類或性狀只要該鎳粒子表面上的氧化鎳及氫氧化鎳的莫耳分率比(B/A)滿足所述關係,則並無特別限定。例如,鎳粒子的形狀(外形)可為球形,亦可為非球形。另外,鎳粒子可為將鎳作為主成分的各種鎳粒子。此處,所謂將鎳作為主成分的鎳粒子,是指該粒子的80質量%以上(通常為90質量%以上,典型的是95質量%以上,例如98質量%以上)為鎳的粒子。作為可使用的鎳粒子的例子,並無特別限定,可列舉氣相法鎳或液相法鎳等。此處所述的氣相法鎳的例子可列舉:利用藉由使氯化鎳氣體與還原性氣體接觸來生成鎳粉末的氣相還原法所獲得的鎳。或者,亦可使用藉由噴霧熱分解性的鎳化合物並進行熱分解的噴霧熱分解法所獲得的鎳。 The types or properties of the nickel particles disclosed herein are not particularly limited as long as the molar fraction ratio (B/A) of nickel oxide and nickel hydroxide on the surface of the nickel particles satisfies the above-mentioned relationship. For example, the shape (outer shape) of the nickel particles may be spherical or non-spherical. In addition, the nickel particles may be various nickel particles containing nickel as a main component. Here, the term "nickel particles containing nickel as a main component" refers to particles in which 80% by mass or more (usually 90% by mass or more, typically 95% by mass or more, for example, 98% by mass or more) of the particles are nickel. It does not specifically limit as an example of the nickel particle which can be used, A vapor-phase method nickel, a liquid-phase method nickel, etc. are mentioned. Examples of the gas-phase method nickel described here include nickel obtained by a gas-phase reduction method that produces nickel powder by contacting nickel chloride gas with a reducing gas. Alternatively, nickel obtained by a spray thermal decomposition method in which a thermally decomposable nickel compound is sprayed and thermally decomposed can also be used.

作為鎳粒子,可較佳地採用其平均粒徑為500nm以下者。就導體膜的薄層化等的觀點而言,鎳粒子的平均粒徑較佳為400nm以下,更佳為300nm以下,進而更佳為250nm以下,特佳為200nm以下。鎳粒子的平均粒徑的下限並無特別限定,但適當的是大概設為10nm以上,就耐熱性或處理性等的觀點而言,較佳為30nm以上,更佳為50nm以上。例如鎳粒子的平均粒徑可為80nm以上,典型的是可為100nm以上。本文所揭示的技術 能夠以鎳粒子的平均粒徑為10nm以上、500nm以下(較佳為50nm以上、250nm以下)的形態而較佳地實施。再者,於本說明書中,所謂粒子粉末的「平均粒徑」,是指根據掃描型電子顯微鏡(SEM)觀察所估算的粒度分佈中的累計值50%處的粒徑D50(中值粒徑)。 As the nickel particles, those having an average particle diameter of 500 nm or less can be preferably used. From the viewpoint of thinning of the conductive film, etc., the average particle diameter of the nickel particles is preferably 400 nm or less, more preferably 300 nm or less, still more preferably 250 nm or less, and particularly preferably 200 nm or less. The lower limit of the average particle diameter of the nickel particles is not particularly limited, but it is suitably approximately 10 nm or more. From the viewpoint of heat resistance, handling properties, etc., it is preferably 30 nm or more, and more preferably 50 nm or more. For example, the average particle diameter of nickel particles may be 80 nm or more, and typically it may be 100 nm or more. The technology disclosed in this article It can be preferably implemented in a form in which the average particle diameter of the nickel particles is 10 nm or more and 500 nm or less (preferably 50 nm or more and 250 nm or less). Furthermore, in this specification, the "average particle size" of the particle powder refers to the particle size D50 (median particle size) at 50% of the cumulative value of the particle size distribution estimated by scanning electron microscope (SEM) observations. ).

將糊整體設為100質量%,所述導體形成用糊中的鎳粒子的含量較佳為變成糊整體的30質量%~90質量%(更佳為40質量%~60質量%左右)的比例。 The entire paste is set to 100% by mass, and the content of nickel particles in the conductor forming paste is preferably 30% to 90% by mass (more preferably about 40% to 60% by mass) of the entire paste .

(鈦酸鋇粒子) (Barium titanate particles)

本文所揭示的導體形成用糊含有鈦酸鋇粒子。如上所述,鈦酸鋇粒子是抑制煅燒時的熱收縮(燒結)的成分。鈦酸鋇粒子可為將鈦酸鋇作為主成分的各種鈦酸鋇粒子。此處,所謂將鈦酸鋇作為主成分的鈦酸鋇粒子,是指該粒子的80質量%以上(通常為90質量%以上,典型的是95質量%以上,例如98質量%以上)為鈦酸鋇的粒子。 The conductor forming paste disclosed herein contains barium titanate particles. As described above, the barium titanate particles are a component that suppresses thermal shrinkage (sintering) during firing. The barium titanate particles may be various barium titanate particles having barium titanate as a main component. Here, the so-called barium titanate particles containing barium titanate as the main component means that 80% by mass or more (usually 90% by mass or more, typically 95% by mass or more, for example, 98% by mass or more) of the particles are titanium. Particles of barium acid.

作為所述鈦酸鋇粒子,較佳為其平均粒徑為100nm以下。就鈦酸鋇粒子的分散性及填充性等的觀點而言,鈦酸鋇粒子的平均粒徑較佳為80nm以下,更佳為50nm以下(例如40nm以下)。另外,鈦酸鋇粒子的平均粒徑的下限並無特別限定,適當的是大概設為1nm。就抑制鈦酸鋇粒子的凝聚、處理性等的觀點而言,鈦酸鋇粒子的平均粒徑較佳為10nm以上,更佳為20nm以上。例如,就以更高的水準使填充性及抑制凝聚併存的觀點而 言,較佳為平均粒徑為10nm以上、100nm以下的鈦酸鋇粒子,特佳為平均粒徑為20nm以上、40nm以下的鈦酸鋇粒子。 The barium titanate particles preferably have an average particle diameter of 100 nm or less. From the viewpoints of the dispersibility and filling properties of the barium titanate particles, the average particle diameter of the barium titanate particles is preferably 80 nm or less, and more preferably 50 nm or less (for example, 40 nm or less). In addition, the lower limit of the average particle diameter of the barium titanate particles is not particularly limited, and it is appropriately set to approximately 1 nm. From the viewpoint of suppressing aggregation of barium titanate particles, handling properties, etc., the average particle diameter of the barium titanate particles is preferably 10 nm or more, and more preferably 20 nm or more. For example, from the viewpoint of coexisting filling properties and suppressing aggregation at a higher level In other words, barium titanate particles having an average particle diameter of 10 nm or more and 100 nm or less are preferable, and barium titanate particles having an average particle diameter of 20 nm or more and 40 nm or less are particularly preferable.

相對於鎳粒子100質量份,導體形成用糊中的鈦酸鋇粒子的含量為10質量份以下。就品質穩定性(例如抑制對於電介質層的不良影響(電介質層的組成不均))等的觀點而言,相對於鎳粒子100質量份,鈦酸鋇粒子的含量較佳為9質量份以下,更佳為7質量份以下,進而更佳為5質量份以下。另外,鈦酸鋇粒子的含量的下限只要大於0(零),則並無特別限定,但相對於鎳粒子100質量份,適當的是大概設為0.5質量份以上,較佳為1質量份以上,更佳為1.5質量份以上,進而更佳為2質量份以上,特佳為3質量份以上。例如,就使該鈦酸鋇粒子的添加效果(抑制煅燒收縮的效果)更良好地發揮等的觀點而言,相對於鎳粒子100質量份,鈦酸鋇粒子的含量較佳為5質量份以上,更佳為7質量份以上,進而更佳為9質量份以上。例如,就以高水準使品質穩定性與煅燒收縮抑制效果併存的觀點而言,適宜的是相對於鎳粒子100質量份,鈦酸鋇粒子的含量為1質量份以上、10質量份以下(更佳為2.5質量份以上、9質量份以下,例如2.5質量份以上、5質量份以下)的導體形成用糊。 The content of barium titanate particles in the conductor forming paste is 10 parts by mass or less with respect to 100 parts by mass of nickel particles. From the viewpoint of quality stability (for example, suppression of adverse effects on the dielectric layer (uneven composition of the dielectric layer)), etc., the content of barium titanate particles is preferably 9 parts by mass or less relative to 100 parts by mass of nickel particles. It is more preferably 7 parts by mass or less, and still more preferably 5 parts by mass or less. In addition, the lower limit of the content of the barium titanate particles is not particularly limited as long as it is greater than 0 (zero), but it is appropriately set to approximately 0.5 parts by mass or more, preferably 1 part by mass or more with respect to 100 parts by mass of nickel particles. , More preferably 1.5 parts by mass or more, still more preferably 2 parts by mass or more, particularly preferably 3 parts by mass or more. For example, from the viewpoint of making the addition effect of the barium titanate particles (effect of suppressing firing shrinkage) more satisfactory, the content of the barium titanate particles is preferably 5 parts by mass or more relative to 100 parts by mass of the nickel particles. , More preferably 7 parts by mass or more, and still more preferably 9 parts by mass or more. For example, from the viewpoint of coexisting quality stability and firing shrinkage suppression effect at a high level, it is suitable that the content of barium titanate particles is 1 part by mass or more and 10 parts by mass or less (more It is preferably 2.5 parts by mass or more and 9 parts by mass or less, for example, 2.5 parts by mass or more and 5 parts by mass or less) of the conductor-forming paste.

(分散介質) (Dispersion medium)

導體形成用糊中所使用的分散介質只要是可使所述鎳粒子及鈦酸鋇粒子分散者即可,並無特別限制。作為分散介質,可無特別限制地使用先前的導體形成用糊中所使用者。例如可使用:含 有乙基纖維素等纖維素系高分子、乙二醇及二乙二醇衍生物、甲苯、二甲苯、礦油精、丁基卡必醇、松脂醇等高沸點有機溶媒或該些有機溶媒的兩種以上的組合作為構成成分的有機媒介物。雖然無特別限定,但有機媒介物的含有率適當的是變成糊整體的大概10質量%~60質量%的量。 The dispersion medium used in the conductor forming paste is not particularly limited as long as it can disperse the nickel particles and barium titanate particles. As the dispersion medium, those used in the conventional paste for conductor formation can be used without particular limitation. For example, you can use: There are cellulose polymers such as ethyl cellulose, ethylene glycol and diethylene glycol derivatives, toluene, xylene, mineral spirits, butyl carbitol, pinoresinol and other high-boiling organic solvents or these organic solvents A combination of two or more of the organic vehicles as constituent components. Although it is not particularly limited, the content of the organic vehicle is suitably an amount that becomes approximately 10% by mass to 60% by mass of the entire paste.

本文所揭示的有機媒介物可進而包含有機黏合劑。作為有機黏合劑,只要是可於煅燒時的脫黏合劑處理(典型的是於氧化環境中進行的250℃~500℃的加熱處理)中蒸發去除(脫脂)者即可,且只要是與先前相同的用途的導體形成用糊中所含有的樹脂,則可無特別限制地使用。作為就所述觀點而言適宜的有機黏合劑,例如可列舉:將乙基纖維素、羥基乙基纖維素等纖維素系高分子,聚甲基丙烯酸丁酯、聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯等丙烯酸系樹脂,環氧樹脂,酚樹脂,醇酸樹脂,聚乙烯醇,聚乙烯丁醛等作為基礎的有機黏合劑。 The organic vehicle disclosed herein may further include an organic binder. As the organic binder, any one that can be evaporated and removed (degreased) in the debinding treatment (typically heat treatment at 250°C to 500°C in an oxidizing environment) during calcination (degreasing) is sufficient, and as long as it is the same as the previous one. The resin contained in the conductor forming paste for the same purpose can be used without particular limitation. Suitable organic binders from the above viewpoints include, for example, cellulose polymers such as ethyl cellulose and hydroxyethyl cellulose, polybutyl methacrylate, polymethyl methacrylate, and poly(methyl methacrylate). Acrylic resins such as ethyl methacrylate, epoxy resins, phenol resins, alkyd resins, polyvinyl alcohol, polyvinyl butyral, etc. are used as basic organic adhesives.

(其他成分) (Other ingredients)

於本文所揭示的導體形成用糊中,視需要可含有與先前的導體形成用糊相同的各種有機添加劑。作為所述有機添加劑的例子,可列舉:各種有機黏合劑(可與所述媒介物重複,亦可另行添加不同的黏合劑),或以提昇與陶瓷基材的密接性為目的的矽系、鈦酸酯系及鋁系等的各種偶合劑等。作為所述有機黏合劑,例如可列舉:將丙烯酸樹脂、環氧樹脂、酚樹脂、醇酸樹脂、纖維素系高分子、聚乙烯醇、聚乙烯丁醛等作為基礎者。適宜的是 可對本發明的導體形成用糊賦予良好的黏性及塗膜(對於基材的附著膜)形成性能者。另外,當欲對導體形成用糊賦予光硬化性(感光性)時,亦可適宜添加各種光聚合性化合物及光聚合起始劑。 In the conductor formation paste disclosed herein, the same various organic additives as the previous conductor formation paste may be contained as necessary. Examples of the organic additives include: various organic adhesives (which can be repeated with the vehicle, or a different adhesive may be added separately), or silicon-based, Various coupling agents such as titanate series and aluminum series. Examples of the organic binder include those based on acrylic resins, epoxy resins, phenol resins, alkyd resins, cellulosic polymers, polyvinyl alcohol, polyvinyl butyral, and the like. Suitable is Those capable of imparting good adhesiveness and coating film (adhesion film to the substrate) forming performance to the conductor forming paste of the present invention. In addition, when it is desired to impart photocurability (photosensitivity) to the conductor forming paste, various photopolymerizable compounds and photopolymerization initiators can also be suitably added.

本文所揭示的導體形成用糊可於無損本發明的效果的範圍內,視需要進而含有聚合起始劑、界面活性劑、消泡劑、塑化劑、增黏劑、抗氧化劑、分散劑、聚合抑制劑等可用於導體形成用糊(例如內部電極層形成用糊)的公知的添加劑。所述添加劑的含量只要對應於其添加目的而適宜設定即可,因並非對本發明賦予特徵者,故省略詳細的說明。 The conductor forming paste disclosed herein may further contain polymerization initiators, surfactants, defoamers, plasticizers, tackifiers, antioxidants, dispersants, A polymerization inhibitor or the like can be used as a well-known additive for the paste for forming a conductor (for example, the paste for forming an internal electrode layer). The content of the additive may be appropriately set in accordance with the purpose of the addition, and since it does not characterize the present invention, detailed description is omitted.

<導體形成用糊的製備> <Preparation of Paste for Conductor Formation>

本文所揭示的導體形成用糊的製造方法並無特別限定。例如可使用球磨機或三輥磨機等眾所周知的混合裝置,將導體形成用糊中所含有的各成分混合。將該些成分混合的形態並無特別限定,例如可將所有成分一次性混合,亦能夠以適宜設定的順序來混合。 The manufacturing method of the paste for conductor formation disclosed herein is not particularly limited. For example, a well-known mixing device such as a ball mill or a three-roll mill can be used to mix the components contained in the conductor forming paste. The form in which these components are mixed is not particularly limited, and, for example, all the components may be mixed at once or may be mixed in an appropriately set order.

<用途> <Use>

本文所揭示的導體形成用糊因可高度地提昇導體膜的連續性,故可較佳地應用於要求良好的連續性的導體膜,例如積層陶瓷電子零件中的內部電極層的形成。例如,特別適合於形成積層陶瓷電容器的內部電極層的用途。如圖1所示,所述積層陶瓷電容器200可為將含有鎳粒子及鈦酸鋇粒子的導體膜(包含導體形 成用糊的煅燒體的內部電極層)220與陶瓷層(電介質層)210交替地積層而形成者。適合作為所述積層陶瓷電容器200的內部電極層形成用的糊。於所述用途中,藉由減少鈦酸鋇的使用量,可抑制鈦酸鋇粒子對電介質層造成不良影響(例如組成變動)的情況,因此應用本文所揭示的技術特別有意義。 Since the conductor forming paste disclosed herein can highly improve the continuity of the conductor film, it can be preferably applied to conductor films that require good continuity, such as the formation of internal electrode layers in multilayer ceramic electronic parts. For example, it is particularly suitable for the application of forming the internal electrode layer of a multilayer ceramic capacitor. As shown in FIG. 1, the multilayer ceramic capacitor 200 may be a conductive film (including a conductive film containing nickel particles and barium titanate particles). The internal electrode layer 220 and the ceramic layer (dielectric layer) 210 of the calcined body of the paste used are alternately laminated and formed. It is suitable as a paste for forming the internal electrode layer of the multilayer ceramic capacitor 200. In the application, by reducing the amount of barium titanate used, the barium titanate particles can inhibit the adverse effects (such as composition changes) on the dielectric layer. Therefore, it is particularly meaningful to apply the technology disclosed herein.

<積層陶瓷電容器的構築> <Construction of Multilayer Ceramic Capacitors>

本文所揭示的導體形成用糊例如能夠以包含以下的步驟的形態,用於積層陶瓷電容器200的構築。 The conductor forming paste disclosed herein can be used for the construction of the multilayer ceramic capacitor 200 in a form including the following steps, for example.

即,準備本文所揭示的導體形成用糊。藉由網版印刷法或分注器塗佈法等,以變成所期望的形狀‧厚度的方式,將該導體形成用糊塗佈於包含電介質材料(例如鈦酸鋇或鈦酸鍶等陶瓷材料)的生片(於煅燒後成為電介質膜的未煅燒的電介質片)上。製作多片如所述般形成有未煅燒的導體膜的生片,並將該些生片積層、壓接。如此,獲得積層有未煅燒的導體膜與電介質膜的未煅燒的積層晶片。 That is, the conductor forming paste disclosed herein is prepared. The conductor forming paste is applied to a dielectric material (for example, ceramic materials such as barium titanate or strontium titanate) in a manner that becomes the desired shape and thickness by screen printing or dispenser coating method. On the green sheet (the unfired dielectric sheet that becomes the dielectric film after firing). A plurality of green sheets in which the unfired conductor film is formed as described above is produced, and the green sheets are laminated and pressure-bonded. In this way, an unfired laminated wafer in which an unfired conductor film and a dielectric film are laminated is obtained.

繼而,對該積層晶片進行乾燥,其後,於加熱器中以適當的加熱條件(最高煅燒溫度大概為800℃~1400℃,較佳為1000℃~1400℃,特佳為1200℃~1300℃)加熱規定時間(作為於最高煅燒溫度下維持的時間,例如為10分鐘~2小時左右),藉此使所述晶片煅燒(燒接)‧硬化。於較佳的一形態中,以規定的高速煅燒條件(即,包含自常溫(典型的是室溫)至最高煅燒溫度為止,以600℃/小時~20000℃/小時(例如1000℃/小時~15000℃/小時) 的速度昇溫的過程的煅燒條件)進行煅燒。藉由進行該一連串的處理,可獲得作為目標的積層有導體膜(內部電極層)220與電介質膜210的電容器等電子零件本體250。 Then, the laminated wafer is dried, and thereafter, it is heated in a heater under appropriate heating conditions (the highest calcination temperature is about 800°C to 1400°C, preferably 1000°C to 1400°C, particularly preferably 1200°C to 1300°C ) Heating for a predetermined time (as the time to maintain at the highest calcination temperature, for example, about 10 minutes to 2 hours), thereby sintering (sintering) and hardening the wafer. In a preferred form, the prescribed high-speed calcination conditions (that is, from room temperature (typically room temperature) to the maximum calcination temperature, 600°C/hour to 20000°C/hour (e.g., 1000°C/hour~ 15000℃/hour) The calcination conditions of the process of heating up at the rate of calcination. By performing this series of processes, a target electronic component body 250 such as a capacitor in which a conductor film (internal electrode layer) 220 and a dielectric film 210 are laminated can be obtained.

最後,將外部電極形成用的糊(可為與所述導體形成用糊相同者)塗佈於該電子零件本體250的規定部位上並進行煅燒,藉此形成外部電極230。如此,可構築積層陶瓷電子零件。再者,所述構築方法本身並非特別對本發明賦予特徵者,故省略詳細的說明。 Finally, a paste for forming an external electrode (which may be the same as the paste for forming a conductor) is applied to a predetermined portion of the electronic component body 250 and fired, thereby forming the external electrode 230. In this way, multilayer ceramic electronic parts can be constructed. In addition, the construction method itself does not particularly characterize the present invention, so a detailed description is omitted.

再者,雖然並不企圖限定用途,但如上所述,藉由使用本文所揭示的導體形成用糊,與先前的導體形成用糊相比,即便於將鎳粒子加以微粒子化的情況下,亦可較佳地形成煅燒時的熱收縮得到抑制且耐熱性提昇,並實現進一步的薄層化的細密的導體膜。因此,根據本發明的導體形成用糊,亦可適宜地形成具有10μm以下(例如0.3μm~3μm)的膜厚的導體薄膜。 Furthermore, although it is not intended to limit the use, as described above, by using the conductor forming paste disclosed in this article, compared with the previous conductor forming paste, even when nickel particles are micronized, It is possible to preferably form a fine conductor film in which thermal shrinkage during firing is suppressed, heat resistance is improved, and further thinning is achieved. Therefore, according to the conductor forming paste of the present invention, a conductor thin film having a film thickness of 10 μm or less (for example, 0.3 μm to 3 μm) can also be suitably formed.

<積層陶瓷電容器的製造方法> <Method of Manufacturing Multilayer Ceramic Capacitors>

於本文所揭示的技術中,可包括提供一種包含使用所述導體形成用糊的內部電極層的形成步驟的積層陶瓷電容器的製造方法及藉由該方法所製造的積層陶瓷電容器。即,根據本文所揭示的技術,提供一種包含使用所述導體形成用糊來形成內部電極層的積層陶瓷電容器的製造方法及藉由該方法所製造的積層陶瓷電容器。根據所述製造方法,可提供一種具有連續性良好的內部電極層的高性能(例如大容量)的積層陶瓷電容器。 The technology disclosed herein may include providing a method for manufacturing a multilayer ceramic capacitor including a step of forming an internal electrode layer using the conductor forming paste, and a multilayer ceramic capacitor manufactured by the method. That is, according to the technology disclosed herein, a method for manufacturing a multilayer ceramic capacitor including the formation of an internal electrode layer using the conductor forming paste and a multilayer ceramic capacitor manufactured by the method are provided. According to the manufacturing method, it is possible to provide a high-performance (for example, large-capacity) multilayer ceramic capacitor having an internal electrode layer with good continuity.

以下,對與本發明相關的幾個實施例進行說明,但並不企圖將本發明限定於所述實施例中所示者。 Hereinafter, several embodiments related to the present invention will be described, but it is not intended to limit the present invention to those shown in the embodiments.

<導體形成用糊的製備> <Preparation of Paste for Conductor Formation>

準備鎳粒子表面上的氧化鎳(NiO)、氫氧化鎳(Ni(OH)2)及金屬鎳(Ni)的莫耳分率不同的多種鎳粉末。秤量該些鎳粉末(平均粒徑約為180nm)與鈦酸鋇粉末(平均粒徑約為30nm),並進行攪拌‧混合,藉此製備導體形成用粉末材料。繼而,使用該導體形成用粉末材料來製備Ni糊。即,以最終的糊的組成(質量比)變成導體形成用粉末材料為57.5質量%及殘部為媒介物(溶劑為40.5質量%,黏合劑成分為2質量%)的方式秤量各材料,並使用三輥磨機進行混練。此處,使相對於Ni粉末100質量份的鈦酸鋇粉末的使用量如表1中所示般在0質量份~15質量份之間變動來製備Ni糊。如此,製備各例的Ni糊。 A variety of nickel powders with different molar fractions of nickel oxide (NiO), nickel hydroxide (Ni(OH) 2 ), and metallic nickel (Ni) on the surface of nickel particles are prepared. Weigh the nickel powder (average particle size about 180nm) and barium titanate powder (average particle size about 30nm), and stir and mix them to prepare a powder material for conductor formation. Then, this powder material for conductor formation was used to prepare a Ni paste. That is, the final paste composition (mass ratio) becomes 57.5 mass% of the powder material for conductor formation and the remaining part is the vehicle (solvent is 40.5 mass%, binder component is 2 mass%), and each material is weighed and used Three-roll mill for mixing. Here, as shown in Table 1, the usage amount of the barium titanate powder with respect to 100 parts by mass of Ni powder was varied between 0 parts by mass and 15 parts by mass to prepare Ni paste. In this way, the Ni paste of each example was prepared.

關於各例的Ni糊,將所使用的鎳粒子表面上的NiO的莫耳分率A、Ni(OH)2的莫耳分率B、Ni的莫耳分率C、NiO及Ni(OH)2的莫耳分率比(B/A)、鈦酸鋇添加量匯總並示於表1中。再者,各例的鎳粒子表面上的NiO的莫耳分率A、Ni(OH)2的莫耳分率B、Ni的莫耳分率C是依據基於XPS的所述方法求出者。 Regarding the Ni paste of each example, the molar fraction A of NiO on the surface of the nickel particles used, the molar fraction B of Ni(OH) 2 and the molar fraction C of Ni, NiO and Ni(OH) 2 mole fraction ratio (B / a), the addition amount of barium titanate are summarized and shown in table 1. In addition, the molar fraction A of NiO, the molar fraction B of Ni(OH) 2 and the molar fraction C of Ni on the surface of the nickel particles of each example were obtained by the above-mentioned method based on XPS.

<導體膜的形成> <Formation of Conductor Film>

使用各例的Ni糊來製作導體膜。即,以將Ni粉末的質量作為基準的塗佈量變成0.5mg/cm2的方式,將Ni糊塗佈於將BaTiO3作為主體的陶瓷生片上,並進行乾燥。製作多片如所述般形成有 未煅燒的導體膜的生片,並將該些生片積層、壓接。其後,於含有1%的氫氣與99%的氮氣的混合氣體(還原)環境中實施煅燒處理(昇溫速度為200℃/小時,降溫速度為200℃/小時,於最高煅燒溫度1250℃下維持10分鐘)。如此,獲得交替地形成有導體膜與陶瓷基材(煅燒後的陶瓷基材)的煅燒積層體片。 The Ni paste of each example was used to produce a conductor film. That is, the Ni paste was applied to a ceramic green sheet mainly composed of BaTiO 3 and dried so that the coating amount based on the mass of the Ni powder became 0.5 mg/cm 2. A plurality of green sheets having an unfired conductor film formed as described above are produced, and the green sheets are laminated and pressure-bonded. After that, the calcination process is carried out in a mixed gas (reducing) environment containing 1% hydrogen and 99% nitrogen (the temperature rise rate is 200°C/hour, the temperature drop rate is 200°C/hour, and the maximum calcination temperature is 1250°C. 10 minutes). In this way, a fired laminated body sheet in which a conductor film and a ceramic base material (fired ceramic base material) are alternately formed is obtained.

對利用SEM(Scanning Electron Microscope)以5000倍的倍率觀察所獲得的煅燒積層體片的剖面所獲得的圖像進行分析,於該剖面中,根據將導體形成用糊賦予至陶瓷生片上的部分的長度(L1)、與在所述煅燒物中導體膜覆蓋電介質膜(煅燒後的陶瓷基材)的部分的長度(L2),算出被覆率(=[L2/L1]×100)。該被覆率可作為導體膜的連續性(進而,煅燒收縮抑制效果)的指標來掌握。即,可以說被覆率越高,導體膜的連續性越良好,煅燒收縮抑制效果越大。將結果示於表1及圖2中。圖2是表示氧化鎳及氫氧化鎳的莫耳分率比(B/A)與被覆率(導體膜連續性)的關係的圖表。另外,關於例2~例4,將鈦酸鋇添加量為5質量份時的煅燒積層體片的剖面SEM像示於圖3~圖5中。 The image obtained by observing the cross section of the calcined laminate sheet obtained by SEM (Scanning Electron Microscope) at 5000 times magnification was analyzed. The length (L1) and the length (L2) of the portion where the conductor film covers the dielectric film (ceramic substrate after sintering) in the sintered product were calculated to calculate the coverage rate (=[L2/L1]×100). This coverage rate can be grasped as an index of the continuity of the conductor film (and further, the effect of suppressing firing shrinkage). That is, it can be said that the higher the coverage, the better the continuity of the conductor film, and the greater the firing shrinkage suppression effect. The results are shown in Table 1 and Fig. 2. Fig. 2 is a graph showing the relationship between the molar fraction ratio (B/A) of nickel oxide and nickel hydroxide and the coverage (conductor film continuity). In addition, regarding Examples 2 to 4, the cross-sectional SEM images of the fired laminate sheet when the addition amount of barium titanate is 5 parts by mass is shown in FIGS. 3 to 5.

Figure 106112105-A0305-02-0020-1
Figure 106112105-A0305-02-0020-1

如表1及圖2所示,當鈦酸鋇添加量為10質量份以下 時,若氧化鎳及氫氧化鎳的莫耳分率比(B/A)自0(零)起增加,則被覆率(導體膜的連續性)暫時顯示出增大傾向,而且於中間取得極大值後,再次轉變成減少傾向。即,確認不論所述莫耳分率比(B/A)過大還是過小,被覆率均顯示出下降傾向。另外,當鈦酸鋇添加量相同時,於氧化鎳及氫氧化鎳的莫耳分率比(B/A)為0.2≦(B/A)<1的區域中,可實現更良好的被覆率(例3~例5)。另一方面,當鈦酸鋇添加量為15質量份以上時,看不到所述傾向,所述莫耳分率比(B/A)越增加,被覆率越顯示出增加傾向。因此,確認關於由將所述莫耳分率比(B/A)規定成本文所揭示的較佳的範圍所引起的被覆率(導體膜的連續性)的提昇,於鈦酸鋇添加量為10質量份以下的情況下特別有效地發揮。 As shown in Table 1 and Figure 2, when the addition amount of barium titanate is less than 10 parts by mass When the mole fraction ratio (B/A) of nickel oxide and nickel hydroxide increases from 0 (zero), the coverage rate (continuity of the conductor film) temporarily shows a tendency to increase, and it is extremely large in the middle. After the value, it turns into a decreasing tendency again. That is, it was confirmed that the coverage rate showed a tendency to decrease regardless of whether the molar fraction ratio (B/A) was too large or too small. In addition, when the addition amount of barium titanate is the same, in the region where the molar fraction ratio (B/A) of nickel oxide and nickel hydroxide (B/A) is 0.2≦(B/A)<1, a better coverage rate can be achieved (Example 3~Example 5). On the other hand, when the addition amount of barium titanate is 15 parts by mass or more, the tendency is not seen, and the more the molar fraction ratio (B/A) increases, the more the coverage rate shows a tendency to increase. Therefore, it was confirmed that the increase in the coverage rate (continuity of the conductor film) caused by the molar fraction ratio (B/A) being specified in the preferred range disclosed in the text, the addition amount of barium titanate is It is particularly effective when it is 10 parts by mass or less.

以上,詳細地說明了本發明的具體例,但該些僅為例示,並不限定專利申請的範圍。於專利申請的範圍內所記載的技術中,包含對以上所例示的具體例進行各種變形、變更者。 The specific examples of the present invention have been described in detail above, but these are only examples and do not limit the scope of the patent application. The technology described in the scope of the patent application includes various modifications and changes to the specific examples exemplified above.

Claims (7)

一種導體形成用糊,用於形成導體膜,其包括: 鎳粒子、鈦酸鋇粒子、及分散介質, 相對於所述鎳粒子100質量份,所述鈦酸鋇粒子的含量為10質量份以下,且 於利用X射線光電子分光(XPS)的所述鎳粒子表面的分析中,氫氧化鎳的莫耳分率B對於氧化鎳的莫耳分率A的比(B/A)為0.2≦(B/A)<1。A conductor forming paste for forming a conductor film, comprising: nickel particles, barium titanate particles, and a dispersion medium, relative to 100 parts by mass of the nickel particles, the content of the barium titanate particles is 10 parts by mass or less , And in the analysis of the surface of the nickel particles by X-ray photoelectron spectroscopy (XPS), the ratio (B/A) of the molar fraction B of nickel hydroxide to the molar fraction A of nickel oxide is 0.2≦( B/A)<1. 如申請專利範圍第1項所述的導體形成用糊,其中所述比(B/A)為0.3≦(B/A)≦0.7。The conductor forming paste described in the first item of the scope of patent application, wherein the ratio (B/A) is 0.3≦(B/A)≦0.7. 如申請專利範圍第1項或第2項所述的導體形成用糊,其中所述氧化鎳的莫耳分率A比所述氫氧化鎳的莫耳分率B大12莫耳%以上。The conductor-forming paste described in item 1 or item 2 of the scope of patent application, wherein the mole fraction A of the nickel oxide is greater than the mole fraction B of the nickel hydroxide by 12 mole% or more. 如申請專利範圍第1項或第2項所述的導體形成用糊,其中自所述氧化鎳的莫耳分率A減去所述氫氧化鎳的莫耳分率B所得的值(A-B)為30莫耳%以下。The conductor-forming paste described in item 1 or item 2 of the scope of patent application, wherein the value obtained by subtracting the molar fraction B of the nickel hydroxide from the molar fraction A of the nickel oxide (A- B) Less than 30 mol%. 如申請專利範圍第1項或第2項所述的導體形成用糊,其中所述鎳粒子的平均粒徑為10 nm~500 nm。The conductor forming paste described in item 1 or item 2 of the scope of patent application, wherein the average particle diameter of the nickel particles is 10 nm to 500 nm. 如申請專利範圍第1項或第2項所述的導體形成用糊,其用於形成積層陶瓷電子零件中的內部電極層。The conductor-forming paste described in item 1 or item 2 of the scope of the patent application is used to form internal electrode layers in multilayer ceramic electronic parts. 一種積層陶瓷電容器,其包括內部電極層,所述內部電極層包含如申請專利範圍第1項或第2項所述的導體形成用糊的煅燒體。A multilayer ceramic capacitor includes an internal electrode layer including a calcined body of the conductor-forming paste described in the first or second patent application.
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